Film forming apparatus, film forming method, and method for manufacturing electronic device

Abstract

To provide a film deposition apparatus that enables miniaturization of an apparatus.SOLUTION: A film deposition apparatus with a load lock chamber 100 connected to a treatment chamber for treating a substrate includes: a first chamber S1 and a second chamber S2 each configured to be capable of storing a substrate and each independently being controlled with the degree of vacuum; and a partition wall 114 including an inner wall surface of the first chamber S1 and an inner wall surface of the second chamber S2 and partitioning between the first chamber S1 and the second chamber S2. The partition wall 114 has a thickness that is thicker than a thickness of at least part in the other wall part including the inner wall surface of at least one of the first chamber S1 and the second chamber S2.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus. [Background technology]

[0002] 2. Description of the Related Art A film forming apparatus such as a vapor deposition apparatus is provided with a chamber capable of creating a vacuum inside. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2000-323551 A Summary of the Invention [Problem to be solved by the invention]

[0004] One of the problems to be solved in the conventional film forming apparatus is how to reduce the size of the apparatus. [Means for solving the problem]

[0005] The film forming apparatus of the present invention comprises: A film forming apparatus including a load lock chamber connected to a processing chamber for processing a substrate, a first chamber and a second chamber each configured to accommodate a substrate and each having a vacuum level that can be independently controlled; a partition wall having an inner wall surface of the first chamber and an inner wall surface of the second chamber, the partition wall separating the first chamber and the second chamber; Equipped with The thickness of the partition wall is thicker than the thickness of at least a part of another wall portion having an inner wall surface of at least one of the first chamber and the second chamber. Effect of the Invention

[0006] As described above, according to the present invention, the device can be made smaller. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic configuration diagram of a film forming apparatus according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic cross-sectional view of a load lock chamber according to an embodiment of the present invention. [Diagram 3] FIG. 2 is a schematic cross-sectional view of a load lock chamber according to an embodiment of the present invention. [Figure 4] FIG. 4 is an explanatory diagram of an atmosphere opening portion according to an embodiment of the present invention. [Diagram 5] FIG. 2 is a schematic configuration diagram of a film forming processing chamber according to an embodiment of the present invention. [Figure 6] FIG. 1 is an explanatory diagram of an organic EL display device according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the embodiment of the present invention will be described in detail with reference to the drawings. However, the dimensions, materials, shapes, relative positions, and the like of the components described in the embodiment are not intended to limit the scope of the present invention unless otherwise specified.

[0009] (Example) A film forming apparatus according to an embodiment of the present invention will be described with reference to FIGS.

[0010] <Film forming equipment> The overall configuration of the film forming apparatus according to the present embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic diagram of the film forming apparatus according to the embodiment of the present invention. In this embodiment, a film forming apparatus called an in-line type will be described as an example. In the in-line type film forming apparatus, a plurality of chambers are arranged in a line, and the substrate 10, the substrate carrier 20, and the mask 30 are transported to each chamber in sequence, and various processes are performed in each chamber. Transport rollers and linear motors are used for transport. In each chamber, the degree of vacuum (pressure in the chamber) can be controlled so that each individual chamber or each of a plurality of adjacent chambers is at least in a vacuum state. Generally, a vacuum state means a state of pressure lower than atmospheric pressure. In each chamber, it is preferable to realize a pressure sufficiently lower than atmospheric pressure, that is, a higher degree of vacuum.

[0011] In Fig. 1, among the multiple chambers, only the chambers in which a representative process is performed are indicated with the symbol R, and the other chambers are omitted with black dots. In Fig. 1, the dotted arrows indicate the transport sequence of the substrate 10, the thin solid arrows indicate the transport sequence of the substrate carrier 20, and the thick solid arrows indicate the transport sequence of the mask 30. The operation of the devices provided in each chamber is controlled by a control unit C such as a computer. The control unit C can be provided individually for each device, or a common control unit C can be provided for multiple devices. In general, the control of various operations by a control unit is a well-known technology, so a description of the specific configuration of the control unit C will be omitted.

[0012] First, the substrate 10 and the substrate carrier 20 are sent to the substrate placement chamber R1, where the substrate 10 is held on the upper side of the substrate carrier 20. The substrate carrier 20 and the substrate 10 held by the substrate carrier 20 are transported to the reversal chamber R2. In the reversal chamber R2, the substrate carrier 20 rotates 180° together with the substrate 10 so that the substrate 10 is held on the lower side of the substrate carrier 20. The mask 30 is transported to the reversal chamber R2 via a route different from the transport route of the substrate carrier 20. In the reversal chamber R2, the substrate carrier 20 holding the substrate 10 on the lower side is placed on the mask 30. Then, the substrate 10 held by the substrate carrier 20 is transported to the film formation chamber R3 together with the mask 30 sent to the reversal chamber R2. The rotation of the substrate carrier 20, the joining with the mask 30, and the placement on the mask 30 may each be performed in a separate chamber. Next, in the film formation chamber R3, a thin film is formed on the surface of the substrate 10 through a mask 30 having an opening at a desired film formation position, and then the substrate carrier 20 and the like are transported to the mask unloading chamber R4. Generally, a plurality of film formation chambers R3 are provided as shown in the figure so that thin films can be formed using different materials. Therefore, usually, a film formation process is performed in one specific film formation chamber R3 by transporting the substrate 10 once.

[0013] After the film formation, the substrate 10 held by the substrate carrier 20 is lifted from the mask 30 in the mask unloading chamber R4. The mask 30 that has been used a predetermined number of times is unloaded from the mask unloading chamber R4 to the outside of the apparatus. The substrate 10 held by the substrate carrier 20 and the mask 30 to be used again are transported from the mask unloading chamber R4 to the relay chamber R5. The mask 30 in the relay chamber R5 is transported toward the reversing chamber R2. The substrate carrier 20 and the substrate 10 in the relay chamber R5 are reversed in a reversing chamber (not shown) and then transported to the substrate peeling chamber R6.

[0014] In this substrate removal chamber R6, the substrate 10 is removed from the substrate carrier 20. Thereafter, the substrate carrier 20 is either carried out to the outside of the film forming apparatus or transported back to the substrate placement chamber R1. Furthermore, the substrate 10 removed from the substrate carrier 20 is taken out to the outside.

[0015] In the film forming apparatus according to the present embodiment, a load lock chamber 100 is provided which is connected to a processing chamber for processing the substrate so that the substrate 10 can be taken in and out of the film forming apparatus without exposing the processing chamber for processing the substrate to the atmosphere. In the example shown in FIG. 1, the load lock chamber 100 is connected to the substrate placement chamber R1 and the substrate removal chamber R6 as the processing chamber for processing the substrate. 00 is connected to the load lock chamber 100. A first gate valve 100X is provided on the side where the substrate 10 is loaded and unloaded. A second gate valve 100Y is also provided between the load lock chamber 100 and the processing chambers (here, the substrate mounting chamber R1 and the substrate removal chamber R6).

[0016] When the substrate 10 is loaded into the substrate placement chamber R1, the first gate valve 100X is opened and the second gate valve 100Y is closed, and the substrate 10 is loaded into the load lock chamber 100. After that, the first gate valve 100X is closed, and the interior of the load lock chamber 100 is depressurized, that is, put into a vacuum state, and then the second gate valve 100Y is opened, and the substrate 10 is loaded into the substrate placement chamber R1. When the substrate 10 is unloaded from the substrate peeling chamber R6, the first gate valve 100X is closed, and the interior of the load lock chamber 100 is in a vacuum state, and the second gate valve 100Y is opened, and then the substrate 10 is loaded into the load lock chamber 100 from the substrate peeling chamber R6. After that, after the second gate valve 100Y is closed, the degree of vacuum in the interior of the load lock chamber 100 is reduced to atmospheric pressure or close to it, the first gate valve 100X is opened, and the substrate 10 is unloaded outside the apparatus. As described above, the substrate 10 can be taken in and out of the film forming apparatus without exposing the processing chamber in which various processes are performed to the atmosphere.

[0017] <Load lock chamber> The load lock chamber 100 will be described in more detail with reference to Fig. 2 to Fig. 4. Fig. 2 and Fig. 3 are schematic cross-sectional views of the load lock chamber 100 according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of the load lock chamber 100 cut along a plane perpendicular to the transfer direction of the substrate 10 in Fig. 1, and Fig. 3 is a schematic cross-sectional view of the load lock chamber 100 cut along a plane (horizontal plane) parallel to the installation surface of the load lock chamber 100. Fig. 4 is an explanatory diagram of an air-opening part provided in the load lock chamber 100.

[0018] The load lock chamber 100 includes a first chamber S1 and a second chamber S2, each of which is configured to be able to accommodate a substrate 10 and can control the vacuum level independently, i.e., can change the pressure. The wall portion having the inner wall surface of at least one of the first chamber S1 and the second chamber S2 includes a bottom plate portion 111, a ceiling portion 112, a side plate portion 113, and a partition wall 114 separating the first chamber S1 and the second chamber S2. The partition wall 114 has the inner wall surface of the first chamber S1 and the inner wall surface of the second chamber S2. Note that, although FIG. 2 shows a configuration in which the side plate portion 113 is provided separately above and below the partition wall 114, a configuration in which these are provided integrally can also be adopted. In this case, the side plate portion 113 has the inner wall surfaces of both the first chamber S1 and the second chamber S2.

[0019] As described above, the load lock chamber 100 according to this embodiment is provided with the first chamber S1 and the second chamber S2. This allows these chambers to be used alternately to load and unload the substrate 10, thereby improving productivity. In other words, while one chamber is being used to load and unload the substrate 10, preparation of the other chamber is being carried out, so that the period during which substrate processing is suspended can be eliminated or shortened even during the period when the pressures of these chambers are being pressurized and depressurized.

[0020] Here, a general chamber is configured so that the inside of the chamber is uniformly in a vacuum state or in an atmospheric state. In contrast, in the case of the load lock chamber 100 according to this embodiment, both the first chamber S1 and the second chamber S2 may be in the same state (either a vacuum state or an atmospheric state), or one may be in a vacuum state and the other in an atmospheric state. Therefore, since a force acts on the partition wall 114 from the inner wall surface of the first chamber S1 toward the second chamber S2, or a force acts on the inner wall surface of the second chamber S2 toward the first chamber S1, a measure different from that for the walls of a general chamber is required to suppress deformation of the partition wall 114. Therefore, in this embodiment, the thickness of the partition wall 114 is set to be thicker than the other wall parts (the bottom plate part 111, the ceiling part 112 and The strength of the partition wall 114 is increased by making the thickness of the partition wall 114 thicker than the thickness of the side plate portion 113). This increases the strength of the partition wall 114, and suppresses deformation of the partition wall 114. Note that, for some reason, it may become necessary to make the thickness of a portion of the bottom plate portion 111, the ceiling portion 112, and the side plate portion 113 thicker than the thickness of the partition wall 114. For this reason, it can be said that the thickness of the partition wall 114 should be configured to be thicker than the thickness of at least a portion of the other wall portion having the inner wall surface of at least one of the first chamber S1 and the second chamber S2.

[0021] In the load lock chamber 100, a plurality of pins 120 are provided in each of the first chamber S1 and the second chamber S2. The substrate 10 carried into each chamber is temporarily accommodated in each chamber by being placed on the tips of the plurality of pins 120. In FIG. 3, the positions of the substrate 10 placed on the tips of the plurality of pins 120 are indicated by dotted lines.

[0022] Furthermore, the load lock chamber 100 is provided with a plurality of atmosphere opening parts 130 for opening each chamber to the atmosphere. Some of the plurality of atmosphere opening parts 130 are provided in the partition wall 114. The configuration of the atmosphere opening parts 130 provided in the partition wall 114 will be described with reference to Fig. 4. Figs. 4(a) and (b) are plan views showing the vicinity of the atmosphere opening parts 130 in the partition wall 114, Fig. 4(a) shows a state in which a cover is attached, and Fig. 4(b) shows a state in which the cover is removed. Also, Fig. 4(c) is a cross-sectional view taken along line AA in Fig. 4(a).

[0023] The atmosphere opening section 130 includes a plurality of vent filters 131. These plurality of vent filters 131 are connected to a pipe P. The inside of the pipe P is configured to communicate with the atmosphere. When depressurizing each chamber of the load lock chamber 100 (increasing the degree of vacuum), a valve (not shown) closes and gas in the chamber is discharged by a vacuum pump (not shown). When pressurizing each chamber (reducing the degree of vacuum) to open the chamber to the atmosphere, the valve opens, and for example, an inert gas is filled into each chamber through the pipe P. The vent filter 131 is configured such that a filter is packed at the tip of the pipe to prevent airflow from concentrating during pressurization, and also has the function of suppressing the intrusion of foreign matter.

[0024] The vent filters 131 are disposed in a recess 114a provided in the partition wall 114. A cover 114b for covering the vent filters 131 is provided in the partition wall 114. The cover 114b is fixed to the partition wall 114 by a bolt 114c. The cover 114b is fixed to the partition wall 114 by the bolt 114c via a spacer 114d, so that a gap is provided between the inner wall surface of the recess 114a and the cover 114b to ensure ventilation (see FIG. 4(c)). A partition plate 114e is provided between adjacent vent filters 131. In the example shown in FIG. 4, three vent filters 131 are provided, and a partition plate 114e is provided between adjacent vent filters 131.

[0025] <Film formation chamber> The film formation process in the film formation chamber R3 will be described in more detail with reference to FIG. 5. An evaporation source 50 is provided in the film formation chamber R3 as a film formation source. The substrate 10 held by the substrate carrier 20 is supported by a support member 40 in a state where the substrate 10 is positioned in the film formation chamber R3 so that the substrate 10 faces downward. A mask 30 is also provided below the substrate 10 in a state where the mask 30 is positioned relative to the substrate 10. An opening is provided in the mask 30 at a position corresponding to the position where a thin film is to be formed on the substrate 10. Thus, a film is formed on the substrate 10 held by the substrate carrier 20 through the mask 30.

[0026] In this embodiment, film formation (deposition) is performed by vacuum deposition. Specifically, a film forming material is evaporated or sublimated from an evaporation source 50 as a film forming source, and the film forming material is deposited on the substrate 10. A thin film is formed on the substrate 10. The evaporation source 50 is a known technique, and therefore a detailed description thereof will be omitted. For example, the evaporation source 50 can be composed of a container such as a crucible for accommodating a film-forming material, and a heating device for heating the container. The film-forming source is not limited to the evaporation source 50, and may be a sputtering cathode for forming a film by sputtering.

[0027] <Electronic device manufacturing method> Next, an example of a method for manufacturing an electronic device using the film forming apparatus according to this embodiment will be described. Below, the configuration of an organic EL display device will be shown as an example of the electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0028] First, the organic EL display device to be manufactured will be described. Fig. 6(a) is an overall view of an organic EL display device 700, and Fig. 6(b) shows the cross-sectional structure of one pixel.

[0029] As shown in FIG. 6(a), a plurality of pixels 702 each including a plurality of light-emitting elements are arranged in a matrix in a display area 701 of an organic EL display device 700. Although details will be described later, each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel here refers to the smallest unit that allows a desired color to be displayed in the display area 701. In the case of the organic EL display device according to this embodiment, the pixel 702 is configured by a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B that emit light different from each other. The pixel 702 is often configured by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color.

[0030] 6(b) is a schematic partial cross-sectional view taken along line BB in FIG. 6(a). The pixel 702 is made up of a plurality of light-emitting elements, and each light-emitting element has a first electrode (anode) 704, a hole transport layer 705, one of the light-emitting layers 706R, 706G, and 706B, an electron transport layer 707, and a second electrode (cathode) 708 on a substrate 703. Among these, the hole transport layer 705, the light-emitting layers 706R, 706G, and 706B, and the electron transport layer 707 correspond to organic layers. In this embodiment, the light-emitting layer 706R is an organic EL layer that emits red light, the light-emitting layer 706G is an organic EL layer that emits green light, and the light-emitting layer 706B is an organic EL layer that emits blue light. The light-emitting layers 706R, 706G, and 706B are formed in patterns corresponding to the light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively.

[0031] The first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, the electron transport layer 707, and the second electrode 708 may be formed in common for the plurality of light-emitting elements 702R, 702G, and 702B, or may be formed for each light-emitting element. In order to prevent the first electrode 704 and the second electrode 708 from being shorted by foreign matter, an insulating layer 709 is provided between the first electrodes 704. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 710 is provided to protect the organic EL element from moisture and oxygen.

[0032] 6(b), the hole transport layer 705 and the electron transport layer 707 are shown as single layers, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 704 to the hole transport layer 705 can be formed between the first electrode 704 and the hole transport layer 705. Similarly, an electron injection layer can be formed between the second electrode 708 and the electron transport layer 707.

[0033] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0034] First, a circuit (not shown) for driving the organic EL display device and a substrate (mother glass) 703 on which a first electrode 704 is formed are prepared.

[0035] An acrylic resin is formed by spin coating on the substrate 703 on which the first electrode 704 is formed, and the acrylic resin is patterned by lithography so as to form an opening in the portion where the first electrode 704 is formed, forming an insulating layer 709. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0036] The substrate 703 with the patterned insulating layer 709 is placed on a substrate carrier on which an adhesive member is arranged. The substrate 703 is held by the adhesive member. The substrate is then carried into a first organic material deposition apparatus, and after inversion, a hole transport layer 705 is deposited as a common layer on the first electrode 704 in the display area. The hole transport layer 705 is deposited by vacuum deposition. In practice, the hole transport layer 705 is formed to be larger than the display area 701, so no high-resolution mask is required.

[0037] Next, the substrate 703 on which the hole transport layer 705 has been formed is carried into a second organic material film forming apparatus. The substrate and a mask are aligned, and the substrate is placed on the mask. A red light emitting layer 706R is formed on the portion of the substrate 703 where the red light emitting element is to be disposed.

[0038] Similar to the formation of the light-emitting layer 706R, a light-emitting layer 706G that emits green light is formed by a third organic material film formation apparatus, and further a light-emitting layer 706B that emits blue light is formed by a fourth organic material film formation apparatus. After the formation of the light-emitting layers 706R, 706G, and 706B is completed, an electron transport layer 707 is formed over the entire display area 701 by a fifth film formation apparatus. The electron transport layer 707 is formed as a layer common to the three light-emitting layers 706R, 706G, and 706B.

[0039] The substrate on which the electron transport layer 707 has been formed is moved in a metallic evaporation material deposition device, and a second electrode 708 is deposited.

[0040] Thereafter, the substrate is transferred to a plasma CVD apparatus, where a protective layer 710 is formed, completing the film formation process on the substrate 703. After inversion, the adhesive member is peeled off from the substrate 703, thereby separating the substrate 703 from the substrate carrier. Then, the organic EL display device 700 is completed through cutting.

[0041] If the substrate 703 on which the insulating layer 709 is patterned is exposed to an atmosphere containing moisture or oxygen from the time when it is carried into the film forming apparatus until the film formation of the protective layer 710 is completed, the light emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0042] <Advantages of the film forming apparatus according to this embodiment> The film forming apparatus according to this embodiment includes a load lock chamber 100 including a first chamber S1 and a second chamber S2, each of which is configured to be capable of accommodating a substrate 10 and each of which can control the degree of vacuum independently. The first chamber S1 and the second chamber S2 are separated by a partition wall 114. This allows the apparatus to be made more compact than a configuration in which a plurality of load lock chambers are arranged vertically.

[0043] The partition 114 is thicker than at least a part of the wall portion having the inner wall surface of at least one of the first chamber S1 and the second chamber S2, so that the partition 114 has high strength and is suppressed from being deformed. Therefore, the function of the load lock chamber 100 is sufficiently exhibited while realizing the miniaturization of the device.

[0044] In addition, a recess 114a is provided in the partition wall 114, and a vent filter is placed in the recess 114a. By providing 131, it is possible to effectively utilize the partition wall 114. This allows the device to be further miniaturized.

[0045] In this embodiment, the partition wall 114 of the load lock chamber 100 is provided with the recess 114a, and the vent filter 131 is disposed in the recess 114a. However, even in a general vacuum chamber, a recess is provided in a thick wall, and a vent filter is disposed in the recess, thereby making it possible to reduce the size of the film forming apparatus.

[0046] That is, by adopting a film forming apparatus including a first wall having an inner wall surface of a vacuum chamber, and a second wall having the inner wall surface of the vacuum chamber and having a thickness greater than that of the first wall, a recess is provided in the second wall, and a vent filter is disposed in the recess, the film forming apparatus can be made compact. In this embodiment, the first wall corresponds to the bottom plate 111, the ceiling 112, and the side plate 113, and the second wall corresponds to the partition wall 114. In the case of a vacuum chamber not having a partition wall, a configuration can be adopted in which a recess in which a vent filter is disposed is provided in a wall portion of the bottom plate, the ceiling, and the side plate that is configured to be thicker than the other wall portions.

[0047] (others) In the above embodiment, an in-line type film forming apparatus has been described as an example, however, the film forming apparatus equipped with the load lock chamber of the present invention is not limited to the in-line type film forming apparatus and can also be applied to, for example, a cluster type film forming apparatus. [Explanation of symbols]

[0048] 10: Substrate 20: Substrate carrier 30: Mask 40: Support member 50: Evaporation source 100: Load lock chamber 100X: First gate valve 100Y: Second gate valve 111: Bottom plate portion 112: Ceiling portion 113: Side plate portion 114: Partition wall 114a: Recessed portion 114b: Cover 114c: Bolt 114d: Spacer 114e: Partition plate 120: Pin 130: Atmospheric release part 131: Vent filter C: Control part P: Piping R1: Substrate placement room R2: Reversal room R3: Film deposition room R4: Mask removal room R5: Relay room R6: Substrate peeling chamber S1: First chamber S2: Second chamber

Claims

1. A film forming apparatus including a load lock chamber connected to a processing chamber for processing a substrate, a first chamber and a second chamber each configured to accommodate a substrate and each capable of independently controlling the degree of vacuum; a partition wall having an inner wall surface of the first chamber and an inner wall surface of the second chamber, separating the first chamber from the second chamber; Equipped with A film forming apparatus, wherein the thickness of the partition wall is greater than the thickness of at least a portion of another wall portion having an inner wall surface of at least one of the first chamber and the second chamber.

2. 2. The film forming apparatus according to claim 1, wherein the partition wall has a recess, and a vent filter is disposed in the recess.

3. 3. The film forming apparatus according to claim 2, further comprising a cover for covering the vent filter, and a gap for ensuring ventilation is provided between an inner wall surface of the recess and the cover.

4. 4. The film forming apparatus according to claim 2, wherein a plurality of the vent filters are arranged in the recess, and a partition plate is provided between adjacent ones of the vent filters.

5. A film forming apparatus including a vacuum chamber, a first wall portion having an inner wall surface of the vacuum chamber; a second wall portion having an inner wall surface of the vacuum chamber and having a thickness greater than that of the first wall portion; The wall portion and Equipped with The film forming apparatus, wherein a recess is provided in the second wall portion, and a vent filter is disposed in the recess.

6. A film formation method, characterized by forming a film on a substrate using a film formation apparatus described in claim 1, 2, 3, or 5.

7. A film formation method, characterized by forming a film on a substrate using the film formation apparatus described in claim 4.

8. A method for manufacturing an electronic device, comprising a step of forming an organic film on a substrate using the film formation method described in claim 6.

9. A method for manufacturing an electronic device, comprising a step of forming an organic film on a substrate using the film formation method described in claim 7.

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