Ion source cathode

Abstract

To provide an ion source cathode that improves life performance during ion beam operation and requires fewer parts for assembly.SOLUTION: An improved cathode subassembly includes a solid cylindrical cathode made of tungsten, a cylindrical holder having an internal radially directed rib concentric to the cathode and receiving one end of the cathode, and a cylindrical reflector that is screwably attached to the holder in a position spaced apart from the cathode in the circumferential direction. The holder is threadably attached to a support plate for easy removal for repair and / or replacement.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to an ion implanter having an ion source with an improved ion source cathode. [Background technology]

[0002] Ion implantation is a process used to dope impurity ions into semiconductor substrates. An ion beam is directed from the ion source chamber towards the substrate. The implantation depth into the substrate is based on the ion implantation energy and the mass of the ions produced in the ion source chamber. A precise doping profile in the substrate is important for the proper operation of the device. One or more ion species may be implanted at different doses and energy levels to obtain the desired device characteristics. During implantation or other work piece processing, the accelerated ions erode the surface by sputtering material from the impact surface.

[0003] Ion sources used in existing implanters to generate ion beams are typically referred to as arc ion sources and may include a heated filament cathode to shape the ion beam into a suitable ion beam for wafer processing. US Patent No. 5,497,006 (Sferlazzo) includes an ion source having a cathode and an anticathode (repeller) disposed within a gas confinement chamber. The ion source further includes a solid aluminum block for holding the gas confinement chamber by a base support. The cathode in US Patent No. 5,497,006 is a tubular conductor and end cap that extends partially into the gas confinement chamber. The filament is supported within the tubular conductor and emits electrons that heat the end cap by electron bombardment, thermally emitting ionized electrons into the gas confinement chamber.

[0004] U.S. Patent No. 5,763,890 (Cloutier) also discloses an arc ion source for use in an ion implanter. The ion source includes a gas confinement chamber having conductive chamber walls surrounding a gas ionization region. The gas confinement chamber includes an exit aperture that allows the ion beam to exit the chamber.

[0005] US Patent Application No. 2011 / 0156570 (Jerez) also discloses a cathode assembly for use in an ion implanter. The ion source includes a gas containment chamber with a filament fixation assembly having a pair of bifurcated fixation members for holding a filament connection lead inside a cathode cavity of a separate cathode assembly. The filament fixation assembly is mounted in a self-centering relationship on an insulator block. The cathode assembly has a tungsten cathode formed with an internal cavity for receiving the filament and is fixed by a threaded graphite cylindrical collar inside a retaining shield formed of tungsten, molybdenum, and graphite.

[0006] Other ion sources may drive RF, microwave, or electron beam discharges to produce the desired ions. These ion sources produce plasma densities that are 100 to 10 times lower than arc ion sources and are typically used with source materials that have low ionization potentials (easily ionized species) or when the ion source chamber has a large ion extraction area.

[0007] Low temperature ion sources, such as those shown in U.S. Patent No. 6,975,072 (Leung), can have source materials formed from relatively low temperature materials such as stainless steel, copper, or aluminum. In high temperature ion sources, such as arc ion sources, the chamber walls of the ion source are exposed to an arc plasma having temperatures of tens of thousands of degrees Celsius and large thermal power densities, so the ion source components of prior art implanters must be formed from high temperature materials such as molybdenum, tantalum, or tungsten, i.e., so-called refractory materials.

[0008] As is known in the art, the filament connection lead is typically constrained by a first filament clamping member and a second filament clamping member. These clamping members typically utilize a cam operation or a set screw to open the integral jaws of the clamping members to receive the filament lead. The filament lead is then held by a spring force exerted by the clamping jaws. During operation, the filament reaches extremely high temperatures, which can cause the clamping jaws to loosen over time and become permanently deformed, thereby compromising the electrical connection to the filament and requiring repair or replacement of the ion source, resulting in repeated or extended implanter downtime.

[0009] As is known in the art, the cathode and filament fixture are attached to an electrical / thermal insulator block. The filament / fixture assembly is typically attached to the insulator block using a pan head screw. The assembly is positioned so that the filament is centered within the cavity of the cathode. The assembly is then held in place by tightening the pan head screw. Proper positioning of the filament depends on the skill of the operator and / or the need to use an assembly fixture. Improper assembly installation can result in an electrical short between the filament and the cathode, rendering the ion source inoperable. Additionally, a minimum gap between the filament and the cathode must be met to ensure maximum ion source life. [Prior art documents] [Patent documents]

[0010] [Patent Document 1] U.S. Pat. No. 5,497,006 [Patent Document 2] U.S. Patent No. 5,763,890 [Patent Document 3] US Patent Application No. 2011 / 0156570 [Patent Document 4] U.S. Patent No. 6,975,072 Summary of the Invention [Problem to be solved by the invention]

[0011] It is therefore an object of the present invention to provide an ion source cathode that has improved lifetime performance during ion beam operation and requires fewer parts to assemble.

[0012] It is another object of the present invention to provide an improved ion source cathode structure which increases the life of the ion implanter, reduces parts count, and reduces ion implanter downtime.

[0013] Another object of the present invention is to enhance the emission of thermal electrons (thermal electrons) to ionize the contained gases inside the arc chamber of an ion implanter by minimizing heat loss and by maintaining a high temperature on the cathode surface. [Means for solving the problem]

[0014] In summary, the present invention provides an indirectly heated cathode type ion source assembly for use in generating a stream of ions.

[0015] The assembly includes a cathode subassembly for use with an ion source for generating an ion beam, and a filament coaxially disposed within the cathode subassembly.

[0016] A cathode assembly for an ion implanter includes a cylindrical cathode, a cylindrical holder concentric with the cathode, and a cylindrical reflector threadably mounted to the holder in circumferentially spaced apart relationship to the cathode, the holder having an inner radially directed rib that slidably receives one end of the cathode.

[0017] The cathode is a solid structure and is formed from tungsten.

[0018] Additionally, the holder's internal rib has three circumferentially spaced slots, while one end of the cathode is circumferentially concave with respect to the remainder of the cathode and has three upstanding tabs slidably received into the slots of the holder's internal rib, with the remainder of the concave periphery being radially spaced from the holder. The three tabs serve as thermal contact points, characterizing the cathode as a three-point cathode. Limiting the contact area between the cathode and the holder serves to reduce heat transfer (heat loss) from the cathode to the holder, thereby allowing the cathode surface temperature to be maintained at a high value for improved electron emission.

[0019] Alternatively, if the surface temperature of the cathode is too high and causes some instability in the bias voltage of the cathode, the end of the cathode may be flattened, thereby forming a contact surface all around. This structure serves to increase the contact area between the cathode and the holder and increase the heat transfer from the cathode to the holder, thereby reducing the surface temperature of the cathode.

[0020] The cylindrical reflector serves to prevent heat loss from the cathode, thereby increasing the surface temperature of the cathode.

[0021] The filament has a flattened serpentine shaped end that faces one end of the cathode for emitting a group of thermal electrons onto the cathode, and a pair of parallel lead wires extending from the flattened serpentine shaped end.

[0022] In addition, a cylindrical heat shield is disposed concentrically about the filament to reduce heat loss, has a flat surface spaced apart from and facing the flat serpentine end of the filament to reflect the thermionic electrons emitted from the filament toward the cathode, and has a tubular portion that acts as an insulating liner to minimize heat loss and maintain a high temperature in the region of the filament, thereby increasing the surface temperature of the cathode.

[0023] The cathode sub-assembly is mounted on a graphite support plate. For this purpose, a cylindrical holder is screwably attached to the support plate and protrudes from it. In this way, the cathode sub-assembly can be easily removed for repair or replacement of the ion implanter.

[0024] The filament leads also pass through the support plate and into the interior of the holder.

[0025] A heat shield disposed around the filament is also mounted on the support plate and passes into the interior of the holder.

[0026] The three-point contact nature of the cathode sub-assembly is also intended to minimize heat transfer from the cathode holder to the support plate.

[0027] The cathode is preferably constructed from tungsten and is designed to reach very high temperatures, for example 2700° C. (2,973.15 K), to maximize thermionic emission.

[0028] The present invention also provides an improved ion source for producing an ion beam comprising a box-like shaped arc discharge chamber having a pair of opposed walls, at least one of which has an opening, a cover disposed over the chamber, the cover having a slit for passing the ion beam, a cylindrical graphite liner disposed in the opening in the walls, and a cathode assembly disposed within the liner, the cathode assembly emitting electrons into the chamber.

[0029] In accordance with the invention, a graphite liner has a circumferential shoulder at one end in contact with the wall of the discharge chamber and a cylindrical surface in circumferentially spaced relationship to the wall to define a gap between the wall and the cylindrical surface to maintain the cathode temperature and act as an electrical insulator between the arc discharge chamber and the cathode, thereby reducing heat loss from the cathode.

[0030] Also in accordance with the present invention, the cover has a concave central region and a pair of raised thermal contact points at each corner of the concave central region for receiving a graphite heat shield on its upper surface. The arc discharge chamber is also concave and has a pair of raised thermal contact points at each corner for receiving a graphite heat shield on its upper surface. In this manner, the heat shield is spaced from the cover and from the arc chamber, thereby reducing the area of ​​mutual contact between the cover and the chamber.

[0031] The arc discharge chamber also has a pair of raised contact ribs on each wall of the chamber for contacting and spacing the graphite heat shield from its respective wall, and the bottom surface of the arc discharge chamber has raised contact points for spacing the graphite heat shield from the bottom surface.

[0032] The above and other objects of the present invention, as well as the advantages of the present invention, will become more apparent from the following detailed description taken in conjunction with the drawings. [Brief description of the drawings]

[0033] [Figure 1] 1 shows a block diagram of an ion implanter of conventional construction; [Diagram 2] 1 shows a schematic of a conventional ion source in an ion implanter. [Diagram 3] 1 shows an exploded view of an indirectly heated cathode ion source according to the present invention. [Figure 4] 4 shows an end view of the ion source of FIG. 3. [Diagram 5] This shows a view taken along line 5-5 in FIG. [Figure 6] 6 shows an enlarged cross-sectional view of FIG. 5. [Figure 7] 1 illustrates an exploded view of a mounting arrangement of a cathode sub-assembly to a support plate according to the present invention. [Figure 8] 1 shows a cathode of the present invention having three point contacts. [Figure 9] 1 shows a cathode of the present invention having flattened ends. [Figure 10] 1 shows a cross-sectional view of an ion source chamber fitted with a cathode subassembly according to the present invention. [Figure 11] 11 shows an enlarged cross-sectional view of FIG. [Figure 12] 1 shows a perspective view of a cover for an ion source chamber according to the present invention. [Figure 13] 12 shows a perspective view of an arc chamber body according to the present invention for receiving the cover of FIG. 11; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] Referring to FIG. 1, a conventional ion beam implanter 1 includes an ion source 2 for generating a population of ions (ions) that form an ion beam 5, which is shaped and selectively deflected across a beam path to either the end or to an implantation station.

[0035] The ion source 2 includes a plasma chamber that is powered by an extraction power supply 3 and defines an interior region into which the source material is injected. The source material may include an ionizable gas or may include vaporized source material. Ions generated within the plasma chamber are extracted from the chamber by an ion beam extraction assembly 4, which includes a number of metallic electrodes for forming an ion accelerating electric field.

[0036] After beam extraction 4, the beam 5 passes through a mass analyzer 6, which is configured with a specific magnetic field such that only ions of a desired mass to charge ratio can travel through the analyzer 6, resulting in maximum transmission through the mass analyzer slit 7. From the mass slit 7, ions of the desired species pass through a deceleration stage 8. Neutral ions 9, light ions 10 and heavy ions 11 are deposited on the graphite walls 12 inside the mass analyzer 6.

[0037] Typically, in high current applications, an indirectly heated cathode (IHC) type ion source is used as the ion source chamber.

[0038] Referring to FIG. 2, a typical indirectly heated cathode (IHC) ion source 13 includes an arc chamber 15 defined by conductive (e.g., tungsten) chamber walls. The chamber 15 defines an ionization zone in which dopant feed gases are energized to generate relevant ions. Different feed gases are fed to the ion source chamber 15 to generate a plasma, which forms an ion beam with specific dopant characteristics. For example, H2, BF3, GeF4, PH3, and AsH3 are introduced as dopant gases at a relatively high chamber temperature, which decompose into monoatoms with low implantation energy, monoatoms with medium implantation energy, and monoatoms with high implantation energy. These ions form a beam, which then passes through an ion source filter. The ion source filter is preferably located near the ion source. The ions in the beam are accelerated / decelerated in a column to the desired energy level. Using a mass analyzer magnet with an aperture, unwanted components are removed from the ion beam, resulting in an ion beam with the desired energy and mass characteristics passing through the analysis aperture.

[0039] The IHC ion source 13 includes a cathode / filament assembly 16 located at one end of an arc chamber 15, where a filament 17 is positioned within the arc chamber 15 in close proximity to a cathode 18. A voltage is applied to the filament 17 to generate a current sufficient to flow through the filament 17, heating it and causing the thermionic emission of electrons. The cathode 18 is indirectly heated through the filament 17 by biasing the cathode 18 more positively than the filament 17, accelerating the thermionic electrons from the filament 17 toward the cathode 18 and heating the cathode 18.

[0040] Typically, a repeller 19 is located at the opposite end of the arc chamber 15 and is biased to the same voltage as the cathode 18. Emitted electrons are confined between the cathode 18 and the repeller 19 and collide with a dopant feed gas introduced into the chamber via a conduit 20, thereby generating a plasma with desired characteristics.

[0041] The ions formed from the dopant gas are extracted as a beam 21 from the ion source chamber 15 through an aperture 22 by, for example, a standard three-electrode configuration with a plasma electrode 23, a suppression electrode 24, and a ground electrode 25 used to create an electric field. Although the suppression electrode 24 is shown as being spaced apart from the ground electrode 25 for illustrative purposes only, the electrodes are in physical contact with each other through an insulator. The plasma electrode 23 may be biased to the same potential as the ion source chamber 15. The suppression electrode 24 is connected to a power supply and is typically biased to a moderate negative value to prevent electrons from flowing back into the ion source chamber 15. The ground electrode 25 is located downstream of the suppression electrode 24 and is at ground potential. The strength of the electric field produced by the electrodes can be adjusted to the desired beam current, thereby extracting a particular type of ion beam 21 from the ions produced in the arc chamber 15.

[0042] Referring to FIG. 1, an ion source bushing 14 may be coupled between the ion source 2 and other components of the ion implanter, such as the vacuum vessel.

[0043] The two ends of the bushing 14 are maintained at different potentials. The ion source 2 may be energized by an extraction power supply 3 at a large extraction potential, in some cases about 80 kV, and in other cases even larger. The other end of the ion source bushing 14 may be coupled to a component at ground potential. The ion source bushing 14] is advantageously constructed with an aluminum shield to trap metallic material (conductive film), such as a tungsten film, on the ion source bushing 14] to avoid dielectric breakdown of the ion source bushing.

[0044] Referring to Figure 3, an improved ion source cathode according to the present invention includes a cathode assembly having a cylindrical cathode 27, a cylindrical holder 28 concentric with the cathode 27, and a cylindrical reflector 26 threadably mounted to the holder 28 in circumferentially spaced relationship with the cathode 27. (See Figure 6)

[0045] 6, the cathode 27 is of solid construction and is formed from tungsten. In addition, one end of the cathode 27 is circumferentially concave relative to the remainder of the cathode, and the holder 28 has an inner radially directed rib 28' that slidably receives the concave end of the cathode 27.

[0046] The holder 28 acts as a heat shield around the cathode 27 .

[0047] 8, the cathode 27 has three circumferentially spaced upstanding tabs 27' on its concave end that are slidably received in slots (not shown) in the holder 28. The remainder of the concave end of the cathode 27 is radially spaced from the holder 28. The tabs 27' provide the thermal contact points between the cathode 27 and the holder 28, thereby characterizing the cathode 27 as a three-point cathode 27.

[0048] A cylindrical threaded reflector 26 is combined with a three-point contact cathode 27 and a cylindrical cathode holder and heat shield 28 to prevent heat loss and thereby improve the surface temperature on the surface of the cathode 27.

[0049] 3 and 6, the cathode assembly is attached to a graphite support plate 29 by threading the end of the holder 28 into an inwardly threaded opening in the support plate 29.

[0050] As shown, a tungsten filament 30 passes through the support plate 29 and has a flattened serpentine end that faces the end of the cathode 27 for emitting a stream of thermal electrons onto the cathode 27 (FIG. 6). The filament 30 has a pair of parallel leads 34 extending from the flattened serpentine end.

[0051] In addition, a cylindrical, tubular reflector 31 surrounds the foot of the filament and extends through the support plate 29 into the holder 28, thereby acting as a heat shield.

[0052] 3, 4, and 5, the filament 30 is attached within the filament support legs of the filament clamping assembly 32 via parallel leads 34 in a conventional manner as described in the above-referenced U.S. Patent Application Publication No. 2011 / 0156570.

[0053] As shown in FIG. 3, mounting screws 33 extend through the filament clamping assembly 32 and into radial tabs on the tubular reflector 31 to hold the reflector 31 in place.

[0054] 5 and 6, the reflector 31 is cup-shaped and has a flat surface 35 spaced apart from and facing the flat, serpentine end of the filament 30, thereby functioning as an electron reflector and reflecting the thermoelectrons emitted from the filament 30 toward the cathode 27. Specifically, the flat surface 35 reflects the thermoelectrons emitted from the tungsten filament 30 toward the back surface of the cathode 27, thereby increasing the surface temperature of the cathode 27.

[0055] The thermal shield and repellent electrode (i.e., reflector) 31 is connected to the negative bias of the filament power supply. The surface emitting portion of the three-point contact cathode 27 is connected to the positive bias of the filament power supply. The thermal shield and reflector 31 should be positioned with a gap 37 between the filament 30 and the flat surface 35 of the thermal shield and reflector 31.

[0056] 7 is a detailed exploded view of the cathode ion source assembly, illustrating the three-point contact seat for reducing heat loss from the cathode 27. The cylindrical heat shield 26, which improves the surface temperature by reducing loss from the sides of the cathode, is threaded onto the internal threads 40 of the holder 28. The cylindrical heat shield 28 is removably held by the male threads of the support plate 29. This allows the cathode 27 to be replaced with a new one when it becomes worn.

[0057] The graphite support plate 29 is then mounted on a ceramic insulator block 44 .

[0058] Referring to FIG. 8, the cathode 27 is characterized as a stepped retainer having a three-point contact seat 27', which reduces heat loss from the cathode 27 and increases the cathode surface temperature.

[0059] 9, the cathode 27 may be characterized as a flattened support having a circumferential thermal contact surface 46 at its end. The flattened support can partially reduce heat loss to reduce the surface temperature of the cathode support.

[0060] From early test results, it was hypothesized that the cathode 27 was so hot that it emitted thermal electrons and infrared radiation to the thermal deflection member 26. By eliminating the three-point function (flattening the contact surfaces), the cathode 27 could be kept below the thermionic emission threshold temperature by increasing the thermal conduction from the cathode 27 through the holder 28 to the support plate 29. This allowed a stable bias power to be applied to the cathode 27.

[0061] Referring to FIG. 10, where like reference numbers refer to like parts as above, the cathode sub-assembly is mounted to a box-like shaped arc chamber 47 over which a cover 48 is positioned, the cover 48 having a slit 49 (see FIG. 12) for passing the ion beam.

[0062] As shown, the arc chamber 47 is lined on all four walls, the bottom, and the top with a flat graphite heat shield 47'. The heat shield on the top of the chamber 47 has an opening that matches the slit 49 in the cover 48.

[0063] 11, where like reference numerals refer to like parts, the arc chamber 47 includes a wall 50 at one end having an opening for receiving a cylindrical graphite liner 51. As shown, the graphite liner 51 has a circumferentially tapered outer shoulder at one end in contact with the wall 50 and a cylindrical surface in circumferentially spaced relationship to the wall 50, thereby defining a gap between the wall 50 and the cylindrical surface to maintain the cathode temperature (gain was approximately 50° C.). The graphite liner 51 functions to reduce heat loss from the cathode 27.

[0064] As shown, the cathode subassemblies 26 , 27 , 28 are positioned within a liner 51 for emitting electrons into the chamber 47 .

[0065] 12, cover 48 has a recessed central region including slits 49 and a pair of raised thermal contact points 52 at each corner of the recessed central region. The recessed central region is sized to receive a graphite heat shield (not shown) on thermal contact points 52, thereby spacing the heat shield from cover 48.

[0066] 13, the arc discharge chamber 47 has a pair of raised thermal contact points 53 at each corner for receiving the thermal contact points of the cover 48. As shown, the chamber 47 is recessed to receive a thermal shield disposed on the cover 48 in contact with the thermal contact points 53. In this manner, the thermal shield is spaced apart from the chamber 47.

[0067] When the cover 48 is placed over the arc discharge chamber 47 with a thermal shield between the cover 48 and the arc discharge chamber 47, the thermal contact points 52, 53 provide only eight contact points between the cover 48 and the chamber 47, thereby reducing heat loss.

[0068] Eight vertical contact lines 55 were added to the chamber walls to space the graphite heat shield 47' (see FIG. 10) from the walls of the chamber 47 to improve the internal temperature of the arc discharge chamber 47. Similarly, four contact points 56 were added to the bottom of the chamber to space the bottom heat shield. These added contact points reduced heat loss and increased the internal gas temperature of the arc discharge chamber 47 by 200° C.

[0069] As discussed above, the present invention provides an ion source cathode for an ion implanter that improves the life of the ion implanter, reduces parts count, and reduces downtime of the ion implanter. Additionally, the present invention improves the emission of thermionic electrons to ionize the gases contained within the arc chamber by minimizing heat loss in the ion implanter and by maintaining a high temperature on the cathode surface.

Claims

1. a cathode (27); a cylindrical holder (28) concentric with said cathode (27), said cylindrical holder (28) having internal radially directed ribs (28"); 1. A cathode assembly for an ion implanter, comprising: A cathode assembly for an ion implanter, characterized in that said cathode (27) is a cylindrical solid structure and has one end slidably received within said rib (28').

2. 2. The cathode assembly of claim 1, further characterized in that the one end of the cathode (27) is circumferentially concave with respect to the remainder of the cathode and has three upstanding tabs (27') slidably received within the ribs (28') of the holder (28).

3. 2. The cathode assembly of claim 1 further characterized by a cylindrical reflector (31) threadably mounted within said holder (28) in circumferentially spaced relation to said cathode (27).

4. 1. An ion source assembly for generating an electron stream, comprising: a support plate (29); a cathode assembly comprising a cathode (27) attached to said support plate (29); a filament (30) passing through the support plate (29), the filament (30) having a flattened serpentine end facing one end of the cathode (27) for emitting thermoelectrons onto the cathode (27); 1. An ion source assembly comprising:

5. 5. The ion source assembly of claim 4, wherein the cathode assembly further comprises a cylindrical holder (28) concentric with and holding the cathode (27), the cylindrical holder (28) being threadably secured to the support plate (29).

6. 6. The ion source assembly of claim 5, further characterized by including a cylindrical thermal shield within the support plate and the cylindrical holder, the thermal shield having a flat surface facing the flat serpentine-shaped end of the filament in spaced relation thereto, thereby reflecting thermoelectrons emitted from the filament toward the cathode.

7. an arc discharge chamber (47) having a box-like shape with a pair of opposing walls, one of said opposing walls having an opening within which is disposed a cylindrical graphite liner (51), said liner (51) having a circumferential shoulder at one end which contacts said wall of said chamber and a cylindrical surface in circumferentially spaced relation to said wall, thereby defining a gap between said wall and said cylindrical surface; 5. The ion source assembly of claim 4, further characterized in that the cathode assembly is disposed within the liner (51) for emitting electrons from the cathode assembly into the chamber (47).

8. 8. The ion source assembly of claim 7, further characterized by: a cover (48) disposed over the chamber (47), the cover (48) having a slit (49) for passing the ion beam, the cover having a recessed central region and a pair of raised electrical contact points (52) at each corner of the recessed central region; and the arc discharge chamber (47) having a pair of raised electrical contact points (53) at each corner thereof for receiving the electrical contact points of the cover (48).

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