Semiconductor device, display, photoelectric conversion device, electronic apparatus, illumination device, and movable body

Abstract

To provide a technique advantageous for preventing a reduction in reliability.SOLUTION: A semiconductor device includes: an element substrate that includes a semiconductor element arranged on a substrate, a terminal for external connection arranged on a principal surface of the substrate, and an insulating layer arranged between the terminal and the principal surface; and an external connection member that has an electrode electrically connected with the terminal with resin material including conductive particles therebetween. The modulus of elasticity of the insulating layer is seven times larger than the modulus of elasticity of the conductive particles.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a semiconductor device, a display device, a photoelectric conversion device, an electronic device, a lighting device, and a moving object. [Background technology]

[0002] Patent Document 1 discloses a substrate for mounting a semiconductor element, on which a semiconductor element is mounted via an anisotropic conductive film containing conductive particles. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2003-273163 A Summary of the Invention [Problem to be solved by the invention]

[0004] When an external connection member such as a flexible wiring board is pressure-bonded to a terminal of a substrate on which a semiconductor element is arranged via an anisotropic conductive film, local stress may be applied to the terminal by conductive particles contained in the anisotropic conductive film. When local stress is applied to the terminal, cracks may occur in the insulating layer arranged under the terminal or in the plug for connecting the wiring pattern arranged on the insulating layer to the terminal, which may reduce reliability.

[0005] An object of the present invention is to provide a technique that is advantageous in suppressing deterioration of reliability. [Means for solving the problem]

[0006] In view of the above problems, a semiconductor device according to an embodiment of the present invention is a semiconductor device including an element substrate including a semiconductor element arranged on a substrate, a terminal for external connection arranged on a main surface of the substrate, and an insulating layer arranged between the terminal and the main surface, and an external connection member having an electrode electrically connected to the terminal via a resin member containing conductive particles, wherein the elastic modulus of the insulating layer is greater than seven times the elastic modulus of the conductive particles. Effect of the Invention

[0007] According to the present invention, it is possible to provide a technique that is advantageous in suppressing deterioration of reliability. [Brief description of the drawings]

[0008] [Figure 1] 1 is a diagram showing a configuration example of a semiconductor device according to an embodiment of the present invention; [Diagram 2] 2 is a diagram showing the presence or absence of cracks in the insulating layer of the semiconductor device of FIG. 1. [Diagram 3] FIG. 2 is a diagram showing a modification of the semiconductor device in FIG. [Figure 4] FIG. 2 is a diagram showing a modification of the semiconductor device in FIG. [Diagram 5] FIG. 2 is a diagram showing a modification of the semiconductor device in FIG. [Figure 6] 2 is a cross-sectional view showing a configuration example of a pixel of the semiconductor device in FIG. [Figure 7] FIG. 1 is a diagram showing an example of an image forming apparatus using the semiconductor device of the present embodiment. [Figure 8] FIG. 1 is a diagram showing an example of a display device using the semiconductor device of this embodiment. [Figure 9] FIG. 1 is a diagram showing an example of a photoelectric conversion device using the semiconductor device of this embodiment. [Figure 10] 1A to 1C are diagrams illustrating examples of electronic devices using a semiconductor device of this embodiment. [Figure 11] FIG. 1 is a diagram showing an example of a display device using the semiconductor device of this embodiment. [Figure 12] 1 is a diagram showing an example of a lighting device using the semiconductor device of this embodiment; [Figure 13]FIG. 1 is a diagram showing an example of a moving object using the semiconductor device of the present embodiment. [Figure 14] FIG. 1 is a diagram showing an example of a wearable device using the light emitting device of the present embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0010] A semiconductor device according to an embodiment of the present disclosure will be described with reference to Figures 1(a), 1(b) to 5(a), and 5(b). Figure 1(a) is a plan view showing a configuration example of a semiconductor device 600 in this embodiment, and a cross-sectional view taken along line X-X' in the plan view. Figure 1(b) is a cross-sectional view taken along line Y-Y' in the plan view of Figure 1(a).

[0011] The semiconductor device 600 includes an element substrate 100 including a semiconductor element 120 disposed on a substrate 110, a terminal 145 for external connection disposed on a main surface MS of the substrate 110, and an insulating layer 130 disposed between the terminal 145 and the main surface MS, and an external connection member 200 in which an electrode 210 is electrically connected to the terminal 145 via a resin member 300 containing conductive particles CP. The element substrate 100 includes a pixel region AA and a peripheral region PA. A plurality of pixels 150 are disposed in the pixel region AA. A plurality of the above-mentioned terminals 145 are disposed in the peripheral region.

[0012] In the configuration shown in Fig. 1(a), the pixel region AA has a substantially rectangular shape. The diagonal length of the pixel region AA may be, for example, 5 mm to 50 mm. However, the shape of the pixel region AA is not limited thereto, and may be, for example, a polygon, or may have a curved outer edge.

[0013] In the peripheral area PA, a circuit for operating the pixels 150 arranged in the pixel area AA may be arranged. For example, each of the pixels 150 may include a light-emitting element, and the semiconductor device 600 may function as a light-emitting device. When the semiconductor device 600 functions as a light-emitting device, a driving circuit for driving the pixels 150 and a processing circuit such as a digital-to-analog conversion circuit (DAC) for processing a luminance signal input to the pixels 150 may be arranged in the peripheral area PA. Also, for example, each of the pixels 150 may include a photoelectric conversion element, and the semiconductor device 600 may function as a photoelectric conversion device. When the semiconductor device 600 functions as a photoelectric conversion device, a driving circuit for driving the pixels 150 and a processing circuit such as a DAC for processing a signal output from the pixels 150 may be arranged in the peripheral area PA. As shown in FIG. 1(a), a sealing layer 160 for protecting the pixels 150 from external damage, moisture, and oxygen may be provided on the pixels 150.

[0014] In addition, although the semiconductor device 600 is described herein as having a pixel region AA, the semiconductor device 600 does not necessarily have to have a pixel region AA in which the pixels 150 are arranged. For example, the semiconductor device 600 may function as a processing device or a storage device in which semiconductor elements such as various logic circuits and memory circuits are arranged. In the semiconductor device 600, when the external connection terminal 145 arranged on the element substrate 100 and the external connection member 200 are connected via the resin member 300, each of the embodiments described below in the present disclosure can be applied.

[0015] Hereinafter, an example will be described in which each of the pixels 150 includes a light-emitting element such as an organic electroluminescence (EL) element, and the semiconductor device 600 functions as a light-emitting device. Here, the light-emitting element is not limited to an organic EL element, and for example, a current-driven electro-optical element whose light emission luminance changes according to the current value flowing through the element, such as an inorganic EL element, an LED element, or a semiconductor laser element, may be used as the light-emitting element. In addition, when the semiconductor device 600 functions as a light-emitting device, instead of the self-emitting element as described above, the semiconductor device 600 may include an illumination device, and a liquid crystal element in a liquid crystal display (LCD) or a reflection element in a digital mirror device (DMD) that controls the light emitted from the illumination device may be arranged in the pixel area AA as the pixel 150. In addition, as described above, each of the pixels 150 may include a photoelectric conversion element, and the semiconductor device 600 may function as a photoelectric conversion device.

[0016] The peripheral area PA is located outside the pixel area AA and may include an area in which non-effective pixels are provided. The non-effective pixels may be, for example, dummy pixels. When the pixel 150 includes a light-emitting element, the dummy pixels may be pixels that do not emit light, for example, pixels that measure a current flowing through the dummy pixels. Also, when the pixel 150 includes a photoelectric conversion element, for example, the dummy pixels may be shielded from light. For this reason, the non-effective pixels may also be called reference elements, test elements, monitor elements, etc.

[0017] A semiconductor element 120, an insulating layer 130, a wiring pattern 140, and pixels 150 may be arranged in a pixel region AA of the element substrate 100. A terminal 145, an alignment mark (not shown), a peripheral circuit (not shown), and the like may be arranged in a peripheral region PA of the element substrate 100. The peripheral circuits arranged in the peripheral region may also be composed of semiconductor elements.

[0018] The substrate 110 of the element substrate 100 may be a semiconductor substrate such as single crystal silicon. For example, the substrate 110 may have a laminated structure in which amorphous silicon, polysilicon, or the like is disposed on a base such as glass or plastic. The semiconductor element 120 may be, for example, a transistor or a diode, at least a part of which may be disposed in the substrate 110. The insulating layer 130 may include silicon oxide, silicon nitride, silicon carbide, or the like. However, the material used for the insulating layer 130 is not limited to these, and any appropriate dielectric material may be used. Here, silicon oxynitride and silicon carbonitride are regarded as a type of silicon nitride since they contain nitrogen and silicon as main elements.

[0019] In the insulating layer 130, a wiring layer including a wiring pattern 140 is arranged using a conductive material such as aluminum or copper and extending along the main surface MS of the substrate 110. The wiring layer including the wiring pattern 140 may be a single layer or may be a multilayer. In addition, in the insulating layer 130, a plug is arranged to electrically connect the wiring pattern 140 to the semiconductor element 120 and the terminal 145. When a plurality of wiring layers including the wiring pattern 140 are provided, the plug may electrically connect the wiring patterns 140 arranged in each wiring layer. The arrangement of the plug will be described later. The terminal 145 may be formed at the same time when the wiring pattern 140 is formed. It can be said that the terminal 145 and at least a part of the wiring pattern 140 are arranged in the same wiring layer.

[0020] A plurality of pixels 150 are arranged in the pixel region AA of the element substrate 100. In the cross-sectional view of FIG. 1(a), the pixels 150 are depicted as an integrated unit, but each pixel includes a light-emitting element and emits light at an arbitrary luminance. Each pixel 150 is connected to a wiring pattern 140 via a plug provided in the insulating layer 130, and is electrically connected to the semiconductor element 120 via the wiring pattern 140. A sealing layer 160 for suppressing the intrusion of moisture, oxygen, etc. is provided on the pixel 150, and although not shown, a color filter layer, a lens structure, etc. may be appropriately provided on the sealing layer 160. Furthermore, a light-transmitting opposing substrate made of glass, acrylic, etc. may be appropriately provided on the element substrate 100 so as to cover at least the pixel region AA.

[0021] Next, the bonding structure between the terminal 145 provided on the element substrate 100 and the external connection member 200 will be described with reference to FIG. 1(b). Here, the area in which the terminal 145 is provided in the peripheral area PA may be referred to as the terminal area. The terminal area of ​​the element substrate 100 may be provided with the terminal 145, the insulating layer 130, an alignment mark (not shown), and the like. The electrode 210 provided on the surface side of the external connection member 200 facing the element substrate 100 is electrically connected to the terminal 145 via the resin member 300. The external connection member 200 may be a wiring board such as a rigid board or a flexible board, or may be a driving circuit chip for operating the pixel 150. For example, the external connection member 200 is a flexible wiring board such as a glass epoxy board or a polyimide film on which a wiring pattern is provided. An electrode 210 using a conductive material such as copper is provided on the main surface of the base member 220 of the external connection member 200, such as a polyimide film. Furthermore, the external connection member 200 may include a drive circuit chip for operating the pixels 150, and the like.

[0022] The resin member 300 may be an anisotropic conductive film (ACF) containing conductive particles CP in a binder resin BR containing an acrylic resin, an epoxy resin, or the like. The conductive particles CP are dispersed and arranged in the binder resin BR. The terminal 145 of the element substrate 100 and the electrode 210 of the external connection member 200 are sandwiched between the conductive particles CP and are pressure-bonded, thereby electrically connecting the terminal 145 and the electrode 210. The semiconductor device 600 can be operated by connecting the element substrate 100 to an external power source, control device, or the like via the external connection member 200.

[0023] Next, a description will be given of a method for manufacturing the semiconductor device 600. Here, as an example, a method for manufacturing the semiconductor device 600 that functions as a light-emitting device in which an organic EL element is arranged in each pixel 150 will be described.

[0024] First, a semiconductor element 120 such as a transistor is formed on a substrate 110 using a semiconductor such as silicon. Here, the main surface MS of the substrate 110 is defined as the surface of the substrate 110 on which the semiconductor elements 120, pixels 150, etc. are formed. This is because the components of the element substrate 100 are arranged on the main surface MS of the substrate 110, and the main surface MS of the substrate 110 can serve as a reference for arranging the components. The semiconductor element 120 is formed at least in the pixel area AA. Also, the semiconductor element 120 may be formed as a peripheral circuit arranged in the peripheral area PA as described above.

[0025] Next, an insulating layer 130 is formed on the substrate 110 and the semiconductor element 120. Silicon oxide, silicon nitride, silicon carbide, or the like is used for the insulating layer 130. In the present embodiment, silicon oxide is used for the insulating layer 130. The insulating layer 130 can be provided not only in the pixel area AA but also in the peripheral area PA. A plug (not shown) electrically connected to the semiconductor element 120 is disposed in the insulating layer 130. A conductive material such as tungsten can be used for the plug. A wiring layer is provided in the insulating layer 130, in which a wiring pattern 140 electrically connected to the semiconductor element 120 via a contact plug is disposed. A metal such as aluminum or copper can be used for the wiring pattern 140. In this case, in order to suppress diffusion of metal from the wiring pattern 140 to the insulating layer 130, a barrier layer using titanium, tantalum, titanium nitride, tantalum nitride, or the like may be provided at the interface between the insulating layer 130 and the wiring pattern 140.

[0026] In the peripheral area PA of the element substrate 100, terminals 145 are formed on the insulating layer 130. The terminals 145 are made of a metal such as aluminum or copper. The terminals 145 may be formed in the same layer as the wiring pattern 140 arranged in any of the wiring layers. By forming the terminals 145 and the wiring pattern 140 in the same layer, it is possible to reduce the number of processes compared to the case where the terminals 145 and the wiring pattern 140 are formed separately.

[0027] In the pixel region AA, a pixel 150 including an organic EL element is provided on the insulating layer 130. The pixel 150 may be electrically connected to the wiring pattern 140. The pixel 150 may be electrically connected to the semiconductor element 120. The organic EL element disposed in the pixel 150 may include a pixel electrode, a counter electrode, and an organic light-emitting layer disposed between the pixel electrode and the counter electrode. The organic light-emitting layer may emit, for example, white light. A pixel separation layer (not shown) may be disposed between adjacent pixels 150 to suppress short circuits between the organic EL elements due to steps in the pixel electrodes. In order to facilitate the injection and transport of holes from the pixel electrode to the organic light-emitting layer, a hole injection layer and a hole transport layer may be formed between the pixel electrode and the organic light-emitting layer. In order to facilitate the injection and transport of electrons from the counter electrode to the organic light-emitting layer, an electron transport layer and an electron injection layer may be formed between the counter electrode and the organic light-emitting layer.

[0028] A sealing layer 160 for preventing moisture from penetrating into the organic EL element is formed on the pixel 150. Silicon nitride, silicon oxynitride, aluminum oxide, or a laminated structure thereof may be used for the sealing layer 160. At least the sealing layer 160 on the terminal 145 is removed by dry etching or the like, so that the terminal 145 is exposed.

[0029] Next, in the terminal region of the peripheral region PA of the element substrate 100, the terminal 145 of the element substrate 100 and the electrode 210 of the external connection member 200 are electrically connected via a resin member 300 containing conductive particles CP. In this embodiment, a flexible wiring substrate is used as the external connection member 200. The surface of the external connection member 200 on which the electrode 210 is formed is made to face the element substrate 100, and alignment is performed using an alignment mark (not shown) arranged on the element substrate 100 and an alignment mark (not shown) arranged on the external connection member 200. After aligning the element substrate 100 and the external connection member 200, the electrode 210 of the external connection member 200 and the terminal 145 of the element substrate 100 are thermocompression bonded via the resin member 300. The resin member 300 contains conductive particles CP in a binder resin BR, and the conductive particles CP are sandwiched between the terminal 145 of the element substrate 100 and the electrode 210 of the external connection member 200, thereby electrically connecting the terminal 145 and the electrode 210. The semiconductor device 600 that functions as the light emitting device of this embodiment is manufactured by including the above steps.

[0030] Here, the relationship between the elastic modulus of the insulating layer 130 disposed under the terminal 145 and the conductive particles CP contained in the resin member 300 will be described in detail. As described above, when the external connection member 200 is pressure-bonded, the load applied from above the external connection member 200 propagates through the electrode 210, the conductive particles CP, and the terminal 145 until the binder resin BR of the resin member 300 hardens. The terminal 145 is usually about several hundreds of nm thick. In addition, the lower surface of the terminal 145 is in contact with the upper surface of the insulating layer 130. Therefore, the stress (load) during pressure bonding propagates to the insulating layer 130 disposed under the terminal 145. If the insulating layer 130 is deformed by this stress, a crack may occur in the insulating layer 130. In addition, the stress during pressure bonding may also cause cracks in the wiring pattern and plugs provided in the insulating layer 130. If cracks occur in the insulating layer 130 or in the wiring patterns or plugs disposed in the insulating layer, the reliability of the operation of the semiconductor device 600 may decrease.

[0031] In order to suppress the deformation of the insulating layer 130 when the element substrate 100 and the external connection member 200 are pressure-bonded, it is necessary to select the elastic modulus of the conductive particles CP according to the elastic modulus of the insulating layer 130. In this embodiment, aluminum having a thickness of 300 nm is used as the terminal 145, and silicon oxide having a thickness of 800 nm is used as the insulating layer 130. The elastic modulus of the insulating layer 130 using silicon oxide is about 70 GPa. A plurality of types of resin members 300 having different elastic moduli of the conductive particles CP contained in the binder resin BR were prepared, and the external connection member 200 was thermocompression-bonded to the terminal 145 of the element substrate 100 through each resin member 300, and the presence or absence of cracks in the insulating layer 130 was evaluated. The elastic modulus of the conductive particles CP is defined as the elastic modulus of the conductive particles CP in a state where the conductive particles CP are compressed and deformed by 10% from the state before the terminal 145 and the electrode 210 are electrically connected (pressed) to each other.

[0032] As shown in FIG. 2, when the elastic modulus of the insulating layer 130 is 7 times or less than the elastic modulus of the conductive particles CP, cracks occur in the insulating layer 130. On the other hand, when the elastic modulus of the insulating layer 130 is more than 7 times the elastic modulus of the conductive particles CP, cracks are unlikely to occur in the insulating layer 130, and when the elastic modulus of the insulating layer 130 is 10 times or more than the elastic modulus of the conductive particles CP, cracks hardly occur in the insulating layer 130. In other words, by making the elastic modulus of the conductive particles CP smaller than 1 / 7 of the elastic modulus of the insulating layer 130, and further 1 / 10 or less, the occurrence of cracks in the insulating layer 130 can be suppressed. In addition, the upper limit of the ratio of the elastic modulus of the insulating layer 130 to the elastic modulus of the conductive particles CP is not particularly limited, but for example, the elastic modulus of the insulating layer 130 may be 50 times or less than the elastic modulus of the conductive particles CP. Also, for example, the elastic modulus of the insulating layer 130 may be 100 times or less than the elastic modulus of the conductive particles CP, or may be 200 times or less. When silicon nitride, silicon oxynitride, silicon carbide, aluminum oxide, aluminum nitride, or the like, which has a high elastic modulus, is used as the insulating layer 130, or when the conductive particles CP, which have a low elastic modulus, are used, the ratio of the elastic modulus of the insulating layer 130 to the elastic modulus of the conductive particles CP becomes large.

[0033] In this way, the material of the insulating layer 130 and the material of the conductive particles CP are selected so that the elastic modulus of the insulating layer 130 is more than seven times the elastic modulus of the conductive particles CP contained in the resin member 300. For example, a resin member 300 containing conductive particles CP having an elastic modulus of 7 GPa or less is used for silicon oxide, which is often used for the insulating layer 130. This makes it possible to suppress the occurrence of cracks in the insulating layer 130 when the element substrate 100 and the external connection member 200 are pressure-bonded to each other. As a result, the reliability of the semiconductor device 600 can be improved.

[0034] In the example shown in FIG. 2, the elastic modulus of the insulating layer 130 is constant, and the elastic modulus of the conductive particles CP is changed. However, the present invention is not limited to this, and the elastic modulus of the insulating layer 130 may be controlled in the semiconductor device 600. For example, silicon oxide is used for the insulating layer 130 in the above description, but other materials may be used. In addition, as a method for controlling the elastic modulus of the insulating layer 130, the density of the insulating layer 130 may be increased in order to increase the elastic modulus of the insulating layer 130. The increase in density of the insulating layer 130 can be controlled by a deposition method of the insulating layer 130, etc. For example, the pressure when forming the insulating layer 130 and the energy input when forming the insulating layer 130 can be controlled. Specifically, in order to increase the density of the insulating layer 130, the insulating layer 130 can be formed using a high density plasma chemical vapor deposition (HDP-CVD) method, an atomic layer deposition (ALD) method, etc. In addition, for example, the density of the insulating layer 130 may be different between the substrate 110 side and the terminal 145 side. That is, the density of the insulating layer 130 may be higher on the terminal 145 side than on the substrate 110 side.

[0035] A modified example of the above-mentioned semiconductor device 600 will be described with reference to Figures 3(a) to 3(c). Figure 3(a) is a top view of two terminals 145 in the terminal region of the peripheral region PA of the element substrate 100. Figures 3(b) and 3(c) are cross-sectional views taken along line X-X' in Figure 3(a) after the terminal 145 of the element substrate 100 and the electrode 210 of the external connection member 200 are connected via the resin member 300. Figure 3(b) shows a case where there is no (small) misalignment between the terminal 145 and the electrode 210, and Figure 3(c) shows a case where there is a misalignment between the terminal 145 and the electrode 210.

[0036] In the configuration shown in Figs. 3(a) to 3(c), an insulating layer 170 is disposed so as to cover a part of the terminal 145. As shown in Figs. 3(a) to 3(c), the insulating layer 170 may be disposed so as to cover the outer edge of the terminal 145. The insulating layer 170 may be disposed so as to cover the insulating layer 130 between each of the multiple terminals 145. In the configuration shown in Figs. 3(a) to 3(c), a plug 135 that electrically connects the wiring pattern 140 and the terminal 145 is also illustrated. Other configurations may be the same as those described above, so the following description will focus on the differences.

[0037] As shown in FIG. 3(a), the insulating layer 170 covers the space between the terminals 145. The insulating layer 170 has an opening 175 at a position overlapping the terminal 145 in the orthogonal projection onto the main surface MS of the substrate 110. The opening 175 in the insulating layer 170 exposes a part of the terminal 145. In the orthogonal projection onto the main surface MS of the substrate 110, the terminal 145 is arranged wider than the opening 175 of the insulating layer 170. Here, the plug 135 electrically connecting the terminal 145 and the wiring pattern 140 is arranged outside the opening 175 of the insulating layer 170. In other words, in the orthogonal projection onto the main surface MS of the substrate 110, the plug 135 is arranged so as to overlap the insulating layer 170. In the configuration shown in FIG. 3(a), an example is shown in which the plug 135 is arranged in the left-right direction of the opening 175, but it may be arranged in the up-down direction of the opening 175. Also, for example, the plug 135 may be disposed so as to surround the opening 175. Furthermore, the shape and number of the plugs 135 are not limited to those shown in Fig. 3(a) as long as they can electrically connect the terminal 145 and the wiring pattern 140 with a desired resistance value. The plug 135 may be made of a conductive material such as tungsten as described above.

[0038] 3(b), a plug 135 is provided so as to penetrate the insulating layer 130 between the terminal 145 and the wiring pattern 140. The plug 135 electrically connects the terminal 145 and the wiring pattern 140. The plug 135 is disposed so as to extend in a direction intersecting the main surface MS of the substrate 110. The plug 135 may extend along a direction perpendicular to the main surface MS of the substrate 110, and electrically connect the terminal 145 and the wiring pattern 140.

[0039] As described above, the insulating layer 170 is provided on the insulating layer 130 between the terminals 145, and the terminals 145 are exposed at the openings 175 of the insulating layer 170. The exposed terminals 145 and the electrodes 210 of the external connection member 200 are electrically connected via the conductive particles CP contained in the resin member 300 in the same manner as described above. The insulating layer 170 can be formed using an insulating material having a higher elastic modulus than the insulating layer 130. That is, the elastic modulus of the insulating layer 170 may be higher than the elastic modulus of the insulating layer 130. Specifically, when silicon oxide is used for the insulating layer 130, silicon nitride, silicon oxynitride, silicon carbide, aluminum oxide, aluminum nitride, or the like having a higher elastic modulus than silicon oxide can be used as the insulating layer 170. The higher the elastic modulus of the insulating layer 170, the more effective it is in suppressing deformation due to stress when the element substrate 100 and the external connection member 200 are pressure-bonded together, even if the insulating layer 170 is made thinner. For example, the elastic modulus of the insulating layer 170 may be three or more times the elastic modulus of the insulating layer 130. Furthermore, for example, the elastic modulus of the insulating layer 170 may be 200 GPa or more.

[0040] 3(c), there are cases where the electrode 210 of the external connection member 200 is crimped out of alignment with the terminal 145. Even in such a case, the plug 135 is arranged so as to overlap the insulating layer 170 in orthogonal projection onto the main surface MS of the substrate 110. As a result, the insulating layer 170, which has a high elastic modulus, suppresses the propagation of stress when the external connection member 200 is crimped to the element substrate 100. As a result, the occurrence of cracks or damage in the plug 135 is suppressed.

[0041] Also, as shown in FIG. 3(c), a case is considered in which a shift occurs in the alignment between the element substrate 100 and the external connection member 200, causing the electrode 210 of the external connection member 200 to ride up onto the insulating layer 170. In this case, if the thickness of the insulating layer 170 is thicker than the diameter R of the conductive particles CP, it becomes difficult to sandwich and press the conductive particles CP on the terminal 145. Here, the diameter R of the conductive particles CP is the diameter of the conductive particles CP before the terminal 145 of the element substrate 100 and the electrode 210 of the external connection member 200 are electrically connected (pressed). In general, when the conductive particles CP are held between the terminal 145 and the electrode 210 in a state where they are crushed by 10% or more compared to the original diameter R, that is, in a state where the diameter after pressing is 0.9R or less, the electrical connection can be more reliably obtained. Therefore, when the thickness of the insulating layer 170 is T, the relationship T≦0.9R may be satisfied. On the other hand, if the insulating layer 170 becomes thinner, the stress generated when the element substrate 100 and the external connection member 200 are pressure-bonded is more likely to propagate to the terminal 145, the insulating layer 130, and the plug 135 disposed below the insulating layer 170. In other words, the effect of suppressing cracks in the insulating layer 130 and the plug 135 may be reduced. Therefore, the relationship 0.2R≦T may be satisfied. In other words, the thickness T of the insulating layer 170 and the diameter R of the conductive particles CP may satisfy the relationship 0.2R≦T≦0.9R.

[0042] Here, the thickness T of the insulating layer 170 may be the thickness of the insulating layer 170 in the direction perpendicular to the substrate 110. The thickness of the insulating layer 170 may be obtained, for example, by measuring the film thickness of a portion of the insulating layer 170 that is disposed on the terminal 145 and has a uniform film thickness. Also, for example, the thickness T of the insulating layer 170 may be obtained by measuring the step between the upper surface of the insulating layer 170 and the terminal 145 at the end of an opening 175 provided in the insulating layer 170 to expose the terminal 145.

[0043] For example, when the diameter R of the conductive particles CP before the terminal 145 and the electrode 210 are connected (pressed) is 4 μm, the thickness T of the insulating layer 170 may be 0.8 μm or more and 3.6 μm or less. Depending on the elastic modulus of the insulating layer 170, the thickness T of the insulating layer 170 may be, for example, 0.5 μm or more. Furthermore, the thickness T of the insulating layer 170 may be, for example, 1 μm or more.

[0044] In this embodiment, silicon nitride having an elastic modulus of about 280 GPa was used as the insulating layer 170, and the thickness was set to 2 μm. That is, the elastic modulus of the insulating layer 170 was set to be 10 times or more the elastic modulus (70 GPa) of the insulating layer 130 using silicon oxide. In addition, in this embodiment, the element substrate 100 and the external connection member 200 were pressure-bonded using a resin member 300 containing conductive particles CP having an elastic modulus of 5 GPa. That is, the elastic modulus of the insulating layer 130 is 7 times or more, and is 10 times or more, the elastic modulus of the conductive particles CP. This can suppress the occurrence of cracks in the insulating layer 130 directly below the opening 175 of the insulating layer 170. Furthermore, in the configuration shown in FIGS. 3(a) to 3(c), the insulating layer 170 with a high elastic modulus is disposed on the plug 135 that is easily damaged by the stress when the element substrate 100 and the external connection member 200 are bonded. By disposing the insulating layer 170 so as to cover the plug 135, damage to the plug 135 can be further suppressed regardless of the presence or absence of the above-mentioned misalignment, compared to a case in which the plug 135 is not covered with the insulating layer 170. As a result, the reliability of the semiconductor device 600 can be further improved.

[0045] Next, a modified example of the above-mentioned semiconductor device 600 will be described with reference to Figures 4(a) and 4(b). Figure 4(a) is a top view of two terminals 145 in the terminal region of the peripheral region PA of the element substrate 100. Figure 4(b) is a cross-sectional view taken along line X-X' in Figure 4(a) after the terminals 145 of the element substrate 100 and the electrodes 210 of the external connection member 200 are connected via the resin member 300.

[0046] In the configuration shown in Figs. 4(a) and 4(b), compared to the configuration shown in Figs. 1(a) to 1(c), the insulating layer 130 includes an insulating layer 131 and an insulating layer 132. The upper surface of the insulating layer 131 may contact the lower surface of the terminal 145. The insulating layer 132 is disposed between the insulating layer 131 and the main surface MS of the substrate 110. The insulating layer 132 is not in contact with the terminal 145. In addition, the wiring pattern 140 is disposed on the insulating layer 132. A plug 135 that penetrates the insulating layer 131 and connects the wiring pattern 140 and the terminal 145 is disposed on the insulating layer 131 and the insulating layer 132. The other configurations may be the same as those described above, so the following description will focus on the differences.

[0047] 4(a) and 4(b), the wiring pattern 140 and the terminals 145 are electrically connected by a plurality of plugs 135. The plugs 135 penetrate the insulating layer 131 as described above. In other words, in an orthogonal projection onto the main surface MS of the substrate 110, the plugs 135 are arranged so as to overlap the insulating layer 131. The shape and number of the plugs 135 are not limited to those shown in FIG. 4(a), and may be any as long as they can electrically connect the terminals 145 and the wiring pattern 140 with a desired resistance value. The plugs 135 may be made of a conductive material such as tungsten as described above.

[0048] The insulating layer 131 is provided directly below the terminal 145, and an end 146 of the terminal 145 is disposed on the insulating layer 131. In other words, in an orthogonal projection onto the main surface MS of the substrate 110, the insulating layer 131 is disposed so as to surround the terminal 145. An insulating material having a higher elastic modulus than the insulating layer 132 may be used for the insulating layer 131. That is, the elastic modulus of the insulating layer 131 may be greater than the elastic modulus of the insulating layer 132. Specifically, when silicon oxide is used for the insulating layer 132 of the insulating layer 130, silicon nitride, silicon oxynitride, silicon carbide, aluminum oxide, aluminum nitride, or the like having a higher elastic modulus than silicon oxide may be used for the insulating layer 131 of the insulating layer 130. The elastic modulus of the insulating layer 131 may be three times or more the elastic modulus of the insulating layer 132. For example, the elastic modulus of the insulating layer 131 may be 200 GPa or more. In this embodiment, silicon nitride is used as the insulating layer 131.

[0049] The terminal 145 is provided so as to contact the insulating layer 131, and the plug 135 is formed so as to penetrate the insulating layer 131, so that the plug 135 is covered by the insulating layer 131. The insulating layer 131 having a high elastic modulus suppresses the propagation of stress when the external connection member 200 is pressure-bonded to the element substrate 100, and as a result, it is possible to suppress the occurrence of cracks and damage in the insulating layer 130 and the plug 135. The configuration shown in Figs. 4(a) and 4(b) has a larger area in which the plug 135 can be arranged than the configurations shown in Figs. 3(a) to 3(c). Therefore, for example, the number of plugs 135 can be increased to suppress the resistance between the terminal 145 and the wiring pattern 140. In addition, the design freedom of the arrangement of the plug 135 is increased.

[0050] When the insulating layer 131 becomes thin, the stress generated when the element substrate 100 and the external connection member 200 are pressure-bonded is easily transmitted to the insulating layer 132 and the plug 135 disposed under the insulating layer 131. In other words, the effect of suppressing cracks in the insulating layer 132 and the plug 135 may be reduced. On the other hand, when the insulating layer 131 becomes thick, the via in which the plug 135 is disposed becomes deep, and when a metal or the like is embedded in the via to form the plug 135, a cavity is easily formed inside. In addition, the processing time of the process of forming the plug 135 may be long. In view of the above, the thickness T of the insulating layer 131 may satisfy the relationship of 0.25T'≦T≦0.5T' when the thickness of the insulating layer 132 is T'. For example, when the thickness of the insulating layer 132 is 0.8 μm, the thickness T of the insulating layer 131 may be 0.2 μm or more and 0.4 μm or less. In this case, the depth of the plug 135 is, for example, about 1.0 μm to 1.2 μm, and the conductive metal can be embedded without creating a cavity inside the via in which the plug 135 is formed.

[0051] Although it depends on the elastic modulus of insulating layer 131, when silicon nitride having an elastic modulus of 280 GPa is used as insulating layer 131, thickness T of insulating layer 131 may be 0.2 μm or more regardless of thickness T' of insulating layer 132. Furthermore, thickness T of insulating layer 131 may be 0.3 μm or more.

[0052] In this embodiment, silicon nitride having a thickness of 0.3 μm was used as the insulating layer 131, and silicon oxide having a thickness of 0.9 μm was used as the insulating layer 132. In addition, in this embodiment, a resin member 300 containing conductive particles CP with an elastic modulus of 15 GPa was used. That is, the elastic modulus of the insulating layer 131 in contact with the terminal 145 is more than 7 times, and is 10 times or more, the elastic modulus of the conductive particles CP. Therefore, no cracks were generated in the insulating layer 130 (insulating layers 131, 132) or the plug 135. Even in the configuration shown in FIGS. 4(a) and 4(b), damage to the insulating layer 130 and the plug 135 when the external connection member 200 is pressure-bonded to the element substrate 100 can be suppressed. As a result, the reliability of the semiconductor device 600 can be improved.

[0053] Next, a modified example of the above-mentioned semiconductor device 600 will be described with reference to Figures 5(a) and 5(b). Figure 5(a) is a top view of two terminals 145 in the terminal region of the peripheral region PA of the element substrate 100. Figure 5(b) is a cross-sectional view taken along line X-X' in Figure 5(a) after the terminals 145 of the element substrate 100 and the electrodes 210 of the external connection member 200 are connected via the resin member 300.

[0054] In the configuration shown in Figs. 5(a) and 5(b), an insulating layer 170 is disposed so as to cover a part of the terminal 145, as compared with the configuration shown in Figs. 4(a) and 4(b). The insulating layer 170 is a layer having a higher elastic modulus than the insulating layer 132. As shown in Figs. 5(a) and 5(b), the insulating layer 170 may be disposed so as to cover the outer edge of the terminal 145. Also, the insulating layer 170 may be disposed so as to cover the insulating layer 130 between each of the multiple terminals 145. The other configurations may be the same as those described above, and therefore the following description will focus on the differences.

[0055] 5(a) and 5(b), the insulating layer 170 covers the space between the terminals 145. An opening 175 is provided above the terminal 145, exposing the terminal 145. The insulating layer 170 has the opening 175 at a position overlapping the terminal 145 in an orthogonal projection onto the main surface MS of the substrate 110. A part of the terminal 145 is exposed by the opening 175 provided in the insulating layer 170. In an orthogonal projection onto the main surface MS of the substrate 110, the terminal 145 is arranged to be wider than the opening 175 of the insulating layer 170.

[0056] In the orthogonal projection onto the main surface MS of the substrate 110, a part of the insulating layer 131 and a part of the insulating layer 170 are arranged so as to overlap each other. In addition, in the orthogonal projection onto the main surface MS of the substrate 110, the opening 175 of the insulating layer 170 is arranged on the insulating layer 131. In the orthogonal projection onto the main surface MS of the substrate 110, the plug 135 connecting the terminal 145 and the wiring pattern 140 is arranged both inside and outside the opening 175 of the insulating layer 170. However, the plug 135 arranged so as to overlap the opening 175 of the insulating layer 170 is also arranged so as to penetrate the insulating layer 131, similar to the configuration shown in FIGS. 4(a) and 4(b). Therefore, even in the insulating layer 132 and the plug 135 in the region overlapping the opening 175 of the insulating layer 170, cracks due to stress when the external connection member 200 is pressure-bonded to the element substrate 100 are suppressed.

[0057] The insulating layer 170 may have the same configuration as the insulating layer 170 shown in Figs. 3(a) to 3(c). For example, when silicon oxide is used for the insulating layer 132, silicon nitride, silicon oxynitride, silicon carbide, aluminum oxide, aluminum nitride, or the like, which has a higher elastic modulus than silicon oxide, may be used for the insulating layer 170. In addition, for example, when the thickness of the insulating layer 170 is T and the diameter of the conductive particle CP before the terminal 145 and the electrode 210 are electrically connected is R, the relationship of 0.2R≦T≦0.9R may be satisfied. Furthermore, for example, depending on the elastic modulus of the insulating layer 170, the thickness T of the insulating layer 170 may be, for example, 0.5 µm or more. In addition, for example, the elastic modulus of the insulating layer 170 may be three times or more the elastic modulus of the insulating layer 132, and for example, the elastic modulus of the insulating layer 170 may be 200 GPa or more. The reasons for these are as described above. In this embodiment, silicon nitride is used as the insulating layer 170, and the thickness T is set to 2 µm.

[0058] In this embodiment, in an orthogonal projection onto the main surface MS of the substrate 110, the insulating layer 131 and the insulating layer 170 are partially overlapped. Therefore, the total thickness of the insulating layers 131 and 170, which have a higher elastic modulus than the insulating layer 132, can be increased. In this embodiment, the insulating layer 131 has a thickness of 0.3 μm, similar to the configuration shown in FIGS. 4(a) and 4(b), and the insulating layer 170 has a thickness of 2 μm. The total thickness of the insulating layers 131 and 170, which have a higher elastic modulus than the insulating layer 132, is 2.3 μm, which makes it possible to further suppress the stress generated when the external connection member 200 is pressure-bonded to the element substrate 100 from being transmitted to the insulating layer 132 and the plug 135.

[0059] In this embodiment, a resin member 300 containing conductive particles CP with an elastic modulus of 15 GPa was used. However, the elastic modulus of the insulating layer 131 and the insulating layer 170 using silicon nitride (elastic modulus 280 GPa) is more than 7 times, and more than 10 times, that of the conductive particles CP. Therefore, no cracks were generated in the insulating layer 130 (insulating layers 131, 132) or the plug 135. The configuration shown in Figures 5(a) and 5(b) can further improve the reliability of the semiconductor device 600 compared to the above-mentioned configurations.

[0060] Here, application examples of the semiconductor device 600 of this embodiment, in which the pixels 150 arranged in the pixel region AA include light-emitting elements as described above and function as a light-emitting device, to an image forming device, a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, and a wearable device will be described with reference to Figs. 6(a), 6(b) to 14(a), 14(b). As described above, the pixel 150 arranged in the pixel region AA of the semiconductor device 600 is described as having an organic light-emitting element such as an organic EL element arranged as a light-emitting element. First, details of each component arranged in the pixel region AA of the semiconductor device 600 will be shown, and then application examples will be described.

[0061] Structure of organic light-emitting device The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer and the color filter. The planarizing layer may be made of acrylic resin or the like. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0062] substrate Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. In addition, the substrate may have a switching element such as a transistor, a wiring pattern, and the like, and an insulating layer thereon. The insulating layer may be made of any material as long as it can form a contact hole so that a wiring pattern can be formed between the first electrode and the substrate, and insulation from wiring patterns that are not connected can be ensured. For example, the insulating layer may be made of a resin such as polyimide, silicon oxide, silicon nitride, and the like.

[0063] electrode A pair of electrodes can be used as the electrodes. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0064] A material having a large work function may be selected as the material for the anode. For example, a metal such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, or tungsten, a mixture containing these metals, or an alloy of these metals, or a metal oxide such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), or indium zinc oxide may be used. Also, a conductive polymer such as polyaniline, polypyrrole, or polythiophene may be used as the material for the anode.

[0065] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0066] When the electrode is used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or an alloy thereof, or a laminate of these may be used. The above materials may function as a reflective film without serving as an electrode. When a transparent electrode is used as the electrode, a transparent conductive layer of oxide such as indium tin oxide (ITO) or indium zinc oxide may be used, but is not limited to these. Photolithography technology may be used to form the electrode.

[0067] On the other hand, a material with a small work function may be selected as the material for the cathode. For example, an alkali metal such as lithium, an alkaline earth metal such as calcium, an aluminum, titanium, manganese, silver, lead, chromium, or a mixture containing these metals may be used. Alternatively, an alloy combining these metals may be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, zinc-silver, or the like may be used. Metal oxides such as indium tin oxide (ITO) may also be used. One of these electrode materials may be used alone, or two or more may be used in combination. The cathode may have a single layer structure or a multilayer structure. Silver may be used as the cathode, and a silver alloy may be used to reduce the aggregation of silver. As long as the aggregation of silver can be reduced, the ratio of the alloy is not important. For example, silver:other metal may be 1:1, 3:1, or the like.

[0068] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but when a direct current or alternating current sputtering method or the like is used, the coverage of the formed film is good and the resistance of the cathode can be reduced.

[0069] Pixel Isolation Layer The pixel separation layer may be formed of so-called silicon oxide such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO) formed by chemical vapor deposition (CVD). In order to increase the resistance in the in-plane direction of the organic compound layer, the thickness of the organic compound layer, particularly the hole transport layer, may be thinned on the sidewall of the pixel separation layer. Specifically, the thickness of the organic compound layer on the sidewall can be thinned by increasing the taper angle of the sidewall of the pixel separation layer or the thickness of the pixel separation layer to increase vignetting during deposition.

[0070] On the other hand, the sidewall taper angle and film thickness of the pixel separation layer can be adjusted to such an extent that no voids are formed in the protective layer formed thereon. By preventing voids from being formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration in reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0071] According to this embodiment, even if the taper angle of the sidewall of the pixel separation layer is not steep, it is possible to effectively suppress charge leakage to adjacent pixels. As a result of this study, it was found that the charge leakage can be sufficiently reduced if the taper angle is in the range of 60 degrees or more and 90 degrees or less. The thickness of the pixel separation layer may be 10 nm or more to 150 nm or less. The same effect can be obtained even if the pixel electrode is composed only of a pixel electrode without a pixel separation layer. However, in this case, the thickness of the pixel electrode is half or less than that of the organic layer, or the pixel electrode end is forward tapered to less than 60 degrees, thereby reducing short circuits in the organic light-emitting element.

[0072] In addition, even when the first electrode is a cathode and the second electrode is an anode, a wide color gamut and low-voltage operation are possible by forming an electron transport material and a charge transport layer, and also by forming an emitting layer on the charge transport layer.

[0073] organic compound layer The organic compound layer may be formed as a single layer or as multiple layers. When the organic compound layer has multiple layers, it may be called a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, or the like, depending on its function. The organic compound layer is mainly composed of an organic compound, but may contain inorganic atoms or inorganic compounds. The organic compound layer may contain, for example, copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, or the like. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0074] protective layer A protective layer may be provided on the cathode. For example, by bonding glass provided with a moisture absorbent on the cathode, the intrusion of moisture and the like into the organic compound layer can be reduced, and the occurrence of display defects can be reduced. In another embodiment, a passivation layer such as silicon nitride may be provided on the cathode to reduce the intrusion of moisture and the like into the organic compound layer. For example, after forming the cathode, the cathode may be transported to another chamber without breaking the vacuum, and silicon nitride having a thickness of 2 μm may be formed by a CVD method to form a protective layer. After forming the protective layer using the CVD method, a protective layer may be provided using an atomic layer deposition (ALD) method. The material of the protective layer formed by the ALD method is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed by a CVD method on the protective layer formed by the ALD method. The protective layer formed by the ALD method may have a smaller film thickness than the protective layer formed by the CVD method. Specifically, the film thickness of the protective layer formed by the ALD method may be 50% or less, or even 10% or less, of the film thickness of the protective layer formed by the CVD method.

[0075] Color Filters A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate, and the substrate on which the color filter is formed and the substrate on which the organic light-emitting element is provided may be bonded together. In addition, for example, a color filter may be patterned on the above-mentioned protective layer using a photolithography technique. The color filter may be made of a polymer.

[0076] planarization layer A planarization layer may be disposed between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing unevenness of the layers below the planarization layer. It may also be called a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, and may be a low molecular weight or a high molecular weight compound. In consideration of reducing unevenness, a high molecular weight organic compound may be used for the planarization layer.

[0077] The planarization layer may be provided above and below the color filter. In this case, the constituent materials of each planarization layer may be the same or different. Specifically, the material of the planarization layer may be polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, etc.

[0078] Micro Lenses The organic light-emitting device may have an optical member such as a microlens on the light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting device and control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the tangent and the hemisphere are the vertices of the microlens. The vertex of the microlens can be determined in the same manner in any cross-sectional view. That is, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the tangent and the semicircle are the vertices of the microlens.

[0079] It is also possible to define the midpoint of the microlens. In the cross section of the microlens, a line segment is imaginary from a point where an arc shape ends to a point where another arc shape ends, and the midpoint of the line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0080] The microlens has a first surface having a convex portion and a second surface opposite to the first surface. The second surface can be disposed closer to the functional layer (light-emitting layer) than the first surface. To adopt such a configuration, it is necessary to form the microlens on the light-emitting device. When the functional layer is an organic layer, a process that becomes high temperature may be avoided in the manufacturing process of the microlens. In addition, when adopting a configuration in which the second surface is disposed closer to the functional layer than the first surface, the glass transition temperatures of all the organic compounds that constitute the organic layer may be 100°C or higher, and it is suitable that the glass transition temperatures are, for example, 130°C or higher.

[0081] Opposing substrate A counter substrate may be disposed on the planarization layer. The counter substrate is called a counter substrate because it is provided at a position corresponding to the aforementioned substrate. The constituent material of the counter substrate may be the same as that of the aforementioned substrate. When the aforementioned substrate is the first substrate, the counter substrate may be the second substrate.

[0082] organic layer The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light emitting element according to an embodiment of the present disclosure may be formed by the method described below.

[0083] The organic compound layer constituting the organic light-emitting element according to the embodiment of the present disclosure can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which a layer is formed by dissolving the compound in an appropriate solvent and applying a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0084] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur, and the layer has excellent stability over time. When a layer is formed by a coating method, the layer can be formed by combining with an appropriate binder resin.

[0085] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0086] These binder resins may be used alone as homopolymers or copolymers, or in combination of two or more. If necessary, known additives such as plasticizers, antioxidants, and ultraviolet absorbers may be used in combination.

[0087] Pixel circuit The light emitting device may have a pixel circuit connected to the light emitting element. The pixel circuit may be an active matrix type that controls the light emission of the first light emitting element and the second light emitting element independently. The active matrix type circuit may be a voltage programming circuit or a current programming circuit. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light emitting element, a transistor that controls the light emission luminance of the light emitting element, a transistor that controls the light emission timing, a capacitance that holds the gate voltage of the transistor that controls the light emission luminance, and a transistor for connecting to GND without going through the light emitting element.

[0088] The light-emitting device has a display region and a peripheral region disposed around the display region. The display region has a pixel circuit, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be smaller than the mobility of a transistor constituting the display control circuit.

[0089] The slope of the current-voltage characteristic of the transistor that constitutes the pixel circuit may be smaller than the slope of the current-voltage characteristic of the transistor that constitutes the display control circuit. The slope of the current-voltage characteristic can be measured by the so-called Vg-Ig characteristic.

[0090] The transistors that make up the pixel circuit are transistors that are connected to a light-emitting element, such as the first light-emitting element.

[0091] Pixels An organic light emitting device includes a plurality of pixels, each of which includes sub-pixels that emit different colors, for example, RGB colors.

[0092] A pixel has an area that emits light, also called a pixel aperture. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0093] The spacing between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0094] The pixels may have a known arrangement in plan view. For example, they may be a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in plan view may be any known shape. For example, they may be a rectangle, a quadrangle such as a diamond, or a hexagon. Of course, if the shape is not an exact shape but is close to a rectangle, it is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0095] Uses of the organic light-emitting device according to the embodiment of the present disclosure The organic light-emitting device according to the embodiment of the present disclosure can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, or a light-emitting device having a white light source and a color filter.

[0096] The display device may be an image information processing device having an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., an information processing unit that processes the input information, and displays the input image on the display unit.

[0097] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of the touch panel function may be an infrared type, a capacitance type, a resistive film type, or an electromagnetic induction type, and is not particularly limited. The display device may be used in the display unit of a multifunction printer.

[0098] Next, further explanation will be given with reference to the drawings. FIG. 6(a) is an example of a pixel that is a component of the pixel region AA described above. The pixel has a sub-pixel 810 (pixel 150). The sub-pixels are divided into 810R, 810G, and 810B according to their light emission. The emitted light color may be distinguished by the wavelength emitted from the light-emitting layer, or the light emitted from the sub-pixel may be selectively transmitted or color-converted by a color filter or the like. Each sub-pixel has a reflective electrode 802 as a first electrode on an interlayer insulating layer 801, an insulating layer 803 covering the edge of the reflective electrode 802, an organic compound layer 804 covering the first electrode and the insulating layer, a transparent electrode 805 as a second electrode, a protective layer 806, and a color filter 807.

[0099] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 801. The transistor and the first electrode may be electrically connected via a contact hole (not shown) or the like.

[0100] The insulating layer 803 may be called a bank or a pixel separation film. The insulating layer 803 covers the edge of the first electrode and is disposed so as to surround the first electrode. The portion of the first electrode where the insulating layer 803 is not disposed contacts the organic compound layer 804 and becomes a light-emitting region.

[0101] The organic compound layer 804 has a hole injection layer 841 , a hole transport layer 842 , a first light emitting layer 843 , a second light emitting layer 844 , and an electron transport layer 845 .

[0102] The second electrode may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0103] The protective layer 806 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as being a single layer, it may be a multi-layer. Each layer may be an inorganic compound layer and an organic compound layer.

[0104] The color filters 807 are divided into 807R, 807G, and 807B according to their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be disposed on the color filters. The color filters may be formed on a protective layer 806. The color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0105] The display device 800 (corresponding to the above-mentioned semiconductor device 600) in FIG. 6(b) shows an organic light-emitting element 826 and a TFT 818 as an example of a transistor. A substrate 811 such as glass or silicon is provided with an insulating layer 812 on the substrate. An active element such as a TFT 818 is provided on the insulating layer, and a gate electrode 813, a gate insulating film 814, and a semiconductor layer 815 of the active element are provided. The TFT 818 is also composed of a semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on the upper part of the TFT 818. An anode 821 constituting the organic light-emitting element 826 and a source electrode 817 are connected via a contact hole 820 provided in the insulating film.

[0106] The method of electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 826 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Fig. 6(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0107] 6(b) shows the organic compound layer as one layer, the organic compound layer 822 may be a multi-layer structure. A first protective layer 824 and a second protective layer 825 are provided on the cathode 823 to reduce deterioration of the organic light-emitting element.

[0108] Although transistors are used as switching elements in the display device 800 of FIG. 6(b), other switching elements may be used instead.

[0109] The transistors used in the display device 800 of Fig. 6(b) are not limited to transistors using single crystal silicon wafers, but may be thin film transistors having an active layer on an insulating surface of a substrate. Examples of the active layer include non-single crystal silicon such as single crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin film transistors are also called TFT elements.

[0110] The transistors included in the display device 800 of Fig. 6(b) may be formed in a substrate such as a silicon substrate. Here, "formed in a substrate" means that the substrate itself, such as a silicon substrate, is processed to produce the transistors. In other words, having a transistor in a substrate can be seen as the substrate and the transistor being integrally formed.

[0111] The organic light-emitting element according to this embodiment has its light emission brightness controlled by a TFT, which is an example of a switching element, and by providing the organic light-emitting element on a plurality of surfaces, an image can be displayed based on the respective light emission brightnesses. Here, the switching element according to this embodiment is not limited to a TFT, and may be a transistor formed of low-temperature polysilicon, or an active matrix driver formed on a substrate such as a silicon substrate. On a substrate may also be within the substrate. Whether to provide a transistor within the substrate or to use a TFT is selected according to the size of the display unit, and if the size is, for example, about 0.5 inches, the organic light-emitting element may be provided on a silicon substrate.

[0112] 7(a) to 7(c) are schematic diagrams showing an example of an image forming apparatus using the semiconductor device 600 of this embodiment functioning as a light emitting device. The image forming apparatus 926 shown in Fig. 7(a) includes a photoconductor 927, an exposure light source 928, a developing unit 931, a charging unit 930, a transfer unit 932, a transport unit 933 (the transport roller in the configuration of Fig. 7(a)), and a fixing unit 935.

[0113] Light 929 is irradiated from an exposure light source 928, and an electrostatic latent image is formed on the surface of the photoconductor 927. The semiconductor device 600 can be applied to this exposure light source 928. The developing unit 931 contains toner or the like as a developer, and can function as a developing device that applies the developer to the exposed photoconductor 927. The charging unit 930 charges the photoconductor 927. The transfer unit 932 transfers the developed image to a recording medium 934. The transport unit 933 transports the recording medium 934. The recording medium 934 can be, for example, paper or film. The fixing unit 935 fixes the image formed on the recording medium.

[0114] 7(b) and 7(c) are schematic diagrams showing a state in which a plurality of light-emitting sections 936 are arranged on an elongated substrate along the longitudinal direction of an exposure light source 928. The semiconductor device 600 can be applied to the light-emitting section 936. That is, a plurality of pixels 150 arranged in the pixel area AA are arranged along the longitudinal direction of the substrate. The direction 937 is parallel to the axis of the photoconductor 927. This column direction is the same as the axial direction of the photoconductor 927 when it rotates. This direction 937 can also be called the long axis direction of the photoconductor 927.

[0115] FIG. 7(b) shows a form in which the light-emitting units 936 are arranged along the long axis direction of the photoconductor 927. FIG. 7(c) shows a modified example of the arrangement of the light-emitting units 936 shown in FIG. 7(b), in which the light-emitting units 936 are arranged alternately in the column direction in the first and second columns. The light-emitting units 936 are arranged at different positions in the row direction in the first and second columns. In the first column, a plurality of light-emitting units 936 are arranged at intervals, and in the second column, the light-emitting units 936 are arranged at positions corresponding to the gaps between the light-emitting units 936 in the first column. In addition, a plurality of light-emitting units 936 are arranged at intervals in the row direction. The arrangement of the light-emitting units 936 shown in FIG. 7(c) can be rephrased as, for example, a state in which the light-emitting units 936 are arranged in a lattice pattern, a state in which the light-emitting units 936 are arranged in a staggered pattern, or a checkerboard pattern.

[0116] FIG. 8 is a schematic diagram showing an example of a display device using the semiconductor device 600 of this embodiment functioning as a light-emitting device. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 11007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPC1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. An active element such as a transistor is arranged on the circuit board 11007. The battery 1008 does not need to be arranged if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be arranged at this position. The semiconductor device 600 can be applied to the display panel 1005. The pixel 150 arranged in the pixel area AA of the semiconductor device 600 functioning as the display panel 1005 is connected to an active element such as a transistor arranged on the circuit board 11007 and operates.

[0117] The display device 1000 shown in Fig. 8 may be used as a display unit of a photoelectric conversion device (which may also be called an imaging device) having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the photoelectric conversion device, or may be a display unit disposed within a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0118] FIG. 9 is a schematic diagram showing an example of a photoelectric conversion device using the semiconductor device 600 of this embodiment functioning as a light emitting device. The photoelectric conversion device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be called an imaging device. The semiconductor device 600 of this embodiment can be applied to the viewfinder 1101 and the rear display 1102, which are display units. In this case, the pixel area AA of the semiconductor device 600 may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, and the possibility that the subject will be blocked by an obstruction.

[0119] Since the timing suitable for capturing an image is often short, it is better to display information as soon as possible. Therefore, a semiconductor device 600 in which pixels 150 including light-emitting elements using an organic light-emitting material such as an organic EL element are arranged in a pixel area AA may be used in a viewfinder 1101 or a rear display 1102. This is because organic light-emitting materials have a fast response speed. The semiconductor device 600 using an organic light-emitting material is more suitable than a liquid crystal display device for these devices that require a high display speed.

[0120] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has a plurality of lenses, and forms an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives light that has passed through the optical section. The focal points of the plurality of lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0121] The semiconductor device 600 may be applied to a display unit of an electronic device. In this case, the semiconductor device 600 may have both a display function and an operation function. Examples of the portable terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0122] FIG. 10 is a schematic diagram showing an example of an electronic device using the semiconductor device 600 of this embodiment functioning as a light-emitting device. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint and performs unlocking or the like. A portable device having a communication unit can also be called a communication device. The semiconductor device 600 of this embodiment can be applied to the display unit 1201.

[0123] 11(a) and 11(b) are schematic diagrams showing an example of a display device using the semiconductor device 600 of this embodiment functioning as a light-emitting device. FIG. 11(a) shows a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The semiconductor device 600 of this embodiment can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 11(a). For example, the lower side of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0124] FIG. 11(b) is a schematic diagram showing another example of a display device using the semiconductor device 600 of this embodiment functioning as a light-emitting device. The display device 1310 of FIG. 11(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The semiconductor device 600 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be one display unit without a joint. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit may display one image.

[0125] FIG. 12 is a schematic diagram showing an example of a lighting device using the semiconductor device 600 of this embodiment functioning as a light-emitting device. The lighting device 1400 may have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion section 1405. The semiconductor device 600 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion section 1405 can effectively diffuse the light of the light source, such as for lighting up, and deliver the light to a wide range. If necessary, a cover may be provided on the outermost part. The lighting device 1400 may have both the optical film 1404 and the light diffusion section 1405, or only one of them.

[0126] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white light, daylight white light, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device 1400 may have a power supply circuit connected to the semiconductor device 600 that functions as the light source 1402. The power supply circuit is a circuit that converts AC voltage to DC voltage. Moreover, white has a color temperature of 4200K, and daylight white has a color temperature of 5000K. Moreover, the lighting device 1400 may have a color filter. Moreover, the lighting device 1400 may have a heat dissipation unit. The heat dissipation unit dissipates heat inside the device to the outside of the device, and examples of the heat dissipation unit include metals with high specific heat and liquid silicon.

[0127] FIG. 13 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the semiconductor device 600 of this embodiment functioning as a light-emitting device. The automobile 1500 may have a tail lamp 1501, and may be configured to turn on the tail lamp 1501 when braking or the like is performed. The semiconductor device 600 of this embodiment may be used as a head lamp as a vehicle lamp. An automobile is an example of a moving body, and the moving body may be a ship, a drone, an aircraft, a railroad car, an industrial robot, or the like. The moving body may have a machine body and a lamp provided thereon. The lamp may indicate the current position of the machine body.

[0128] The semiconductor device 600 of this embodiment can be applied to a tail lamp 1501. The tail lamp 1501 may have a protective member that protects the semiconductor device 600 functioning as the tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, and may be made of polycarbonate or the like. The protective member may be made by mixing a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like with polycarbonate.

[0129] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display such as a head-up display. The semiconductor device 600 of this embodiment may be used for the transparent display. In this case, the constituent materials of the electrodes and the like of the semiconductor device 600 are made of transparent materials.

[0130] 14(a) and 14(b), a further application example of the semiconductor device 600 of this embodiment functioning as a light emitting device will be described. The semiconductor device 600 can be applied to a system that can be worn as a wearable device such as smart glasses, a head mounted display (HMD), or a smart contact lens. An image capturing and displaying device used in such an application example has an image capturing device capable of photoelectrically converting visible light, and a light emitting device capable of emitting visible light.

[0131] 14(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, the semiconductor device 600 of this embodiment is provided on the back side of the lens 1601.

[0132] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the semiconductor device 600 according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the semiconductor device 600. The lens 1601 is formed with an optical system for focusing light on the image capture device 1602.

[0133] FIG. 14(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and the control device 1612 is equipped with an imaging device corresponding to the imaging device 1602 and a semiconductor device 600. The lens 1611 is formed with an optical system for projecting light emitted from the imaging device in the control device 1612 and the semiconductor device 600, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the semiconductor device 600, and controls the operation of the imaging device and the semiconductor device 600. The control device 1612 may have a line of sight detection unit that detects the line of sight of the wearer. Infrared light may be used to detect the line of sight. The infrared light emission unit emits infrared light toward the eyeball of a user gazing at a display image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By providing a reduction unit that reduces the amount of light from the infrared light emitting unit to the display unit in a plan view, degradation of image quality is reduced.

[0134] The gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0135] More specifically, a gaze detection process based on the pupil-corneal reflex method is performed. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0136] The semiconductor device 600 according to the embodiment of the present disclosure may have an imaging device having a light receiving element, and may control a display image based on user's line of sight information from the imaging device.

[0137] Specifically, the semiconductor device 600 determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the semiconductor device 600, or may be received from an external control device. In the display area of ​​the semiconductor device 600, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0138] The display area includes a first display area and a second display area different from the first display area, and an area having a high priority is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the semiconductor device 600, or may be determined by an external control device and received. The resolution of the area having a high priority may be controlled to be higher than the resolution of areas other than the area having a high priority. In other words, the resolution of an area having a relatively low priority may be lowered.

[0139] AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object at the end of the line of sight from the image of the eyeball, using as teacher data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the semiconductor device 600, the imaging device, or an external device. If included in an external device, it is transmitted to the semiconductor device 600 via communication.

[0140] When display control is performed based on visual recognition detection, the present invention is preferably applicable to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0141] The disclosure of this specification includes the following semiconductor device, display device, photoelectric conversion device, electronic device, lighting device, and mobile object.

[0142] (Item 1) an element substrate including a semiconductor element disposed on a substrate, a terminal for external connection disposed on a main surface of the substrate, and an insulating layer disposed between the terminal and the main surface; an external connection member in which an electrode is electrically connected to the terminal via a resin member containing conductive particles, A semiconductor device, characterized in that the elastic modulus of the insulating layer is more than seven times the elastic modulus of the conductive particles.

[0143] (Item 2) 2. The semiconductor device according to item 1, wherein the elastic modulus of the insulating layer is 10 times or more the elastic modulus of the conductive particles.

[0144] (Item 3) 3. The semiconductor device according to item 1 or 2, wherein the conductive particles have an elastic modulus of 7 GPa or less.

[0145] (Item 4) 4. The semiconductor device according to any one of items 1 to 3, wherein a lower surface of the terminal is in contact with an upper surface of the insulating layer.

[0146] (Item 5) The insulating layer is a first insulating layer, Further comprising a second insulating layer disposed so as to cover a portion of the terminal; a wiring pattern and a plug connecting the wiring pattern and the terminal are disposed on the first insulating layer; In an orthogonal projection onto the main surface, the plug is disposed so as to overlap the second insulating layer; 5. The semiconductor device according to any one of items 1 to 4, wherein the second insulating layer has a greater elastic modulus than the first insulating layer.

[0147] (Item 6) 6. The semiconductor device according to item 5, wherein the second insulating layer is disposed so as to cover an outer edge portion of the terminal.

[0148] (Item 7) A plurality of terminals including the terminal are disposed on the main surface, 7. The semiconductor device according to item 5 or 6, wherein the second insulating layer is disposed so as to cover the first insulating layer between each of the plurality of terminals.

[0149] (Item 8) The semiconductor device according to any one of items 5 to 7, characterized in that, when the thickness of the second insulating layer is T and the diameter of the conductive particle before the terminal and the electrode are electrically connected is R, the relationship of 0.2R≦T≦0.9R is satisfied.

[0150] (Item 9) 9. The semiconductor device according to any one of items 5 to 8, wherein the second insulating layer has a thickness of 0.5 μm or more.

[0151] (Item 10) 10. The semiconductor device according to any one of items 5 to 9, wherein the elastic modulus of the second insulating layer is three times or more that of the first insulating layer.

[0152] (Item 11) 11. The semiconductor device according to any one of items 5 to 10, wherein the second insulating layer has an elastic modulus of 200 GPa or more.

[0153] (Item 12) The insulating layer is a first insulating layer, further comprising a second insulating layer disposed between the first insulating layer and the main surface; A wiring pattern is disposed on the second insulating layer, a plug is disposed in the first insulating layer and the second insulating layer, the plug penetrating the first insulating layer and connecting the wiring pattern and the terminal; 5. The semiconductor device according to any one of items 1 to 4, wherein the first insulating layer has a greater elastic modulus than the second insulating layer.

[0154] (Item 13) Item 13. The semiconductor device according to item 12, wherein in an orthogonal projection onto the main surface, the first insulating layer is disposed so as to surround the terminal.

[0155] (Item 14) 14. The semiconductor device according to item 12 or 13, wherein when the thickness of the first insulating layer is T and the thickness of the second insulating layer is T', the relationship of 0.25T'≦T≦0.5T' is satisfied.

[0156] (Item 15) 15. The semiconductor device according to any one of items 12 to 14, wherein the first insulating layer has a thickness of 0.2 μm or more.

[0157] (Item 16) 16. The semiconductor device according to any one of items 12 to 15, wherein the first insulating layer has an elastic modulus of 200 GPa or more.

[0158] (Item 17) 17. The semiconductor device according to any one of items 12 to 16, further comprising a third insulating layer having a higher elastic modulus than the second insulating layer, the third insulating layer being arranged to cover a portion of the terminal.

[0159] (Item 18) Item 18. The semiconductor device according to item 17, wherein, in an orthogonal projection onto the main surface, the third insulating layer is arranged so as to cover an outer edge portion of the terminal.

[0160] (Item 19) A plurality of terminals including the terminal are disposed on the main surface, Item 19. The semiconductor device according to item 17 or 18, wherein the third insulating layer is arranged so as to cover the first insulating layer and the second insulating layer between each of the plurality of terminals.

[0161] (Item 20) The semiconductor device described in any one of items 17 to 19, characterized in that when the thickness of the third insulating layer is T and the diameter of the conductive particle before the terminal and the electrode are electrically connected is R, the relationship of 0.2R≦T≦0.9R is satisfied.

[0162] (Item 21) 21. The semiconductor device according to any one of items 17 to 20, wherein the third insulating layer has a thickness of 0.5 μm or more.

[0163] (Item 22) 22. The semiconductor device according to any one of items 17 to 21, wherein the elastic modulus of the third insulating layer is three times or more that of the second insulating layer.

[0164] (Item 23) 23. The semiconductor device according to any one of items 17 to 22, wherein the third insulating layer has an elastic modulus of 200 GPa or more.

[0165] (Item 24) 24. The semiconductor device according to any one of items 1 to 23, wherein a plurality of pixels, each including a light emitting element, are arranged on the element substrate.

[0166] (Item 25) 25. A display device comprising: a semiconductor device according to item 24; and an active element connected to the semiconductor device.

[0167] (Item 26) The imaging device includes an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image, 25. A photoelectric conversion device, wherein the display unit displays an image captured by the imaging element and includes the semiconductor device according to item 24.

[0168] (Item 27) A display device having a housing and a communication unit provided in the housing for communicating with an external device, 25. An electronic device, wherein the display unit comprises the semiconductor device according to item 24.

[0169] (Item 28) A lighting device having a light source and at least one of a light diffusion unit and an optical film, 25. A lighting device, wherein the light source has the semiconductor device according to item 24.

[0170] (Item 29) A moving body having a body and a lighting device provided on the body, The lighting device is a moving object having the semiconductor device according to item 24.

[0171] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0172] 100: element substrate, 110: substrate, 120: semiconductor element, 130: insulating layer, 145: terminal, 200: external connection member, 210: electrode, 300: resin member, 600: semiconductor device, CP: conductive particle, MS: main surface

Claims

1. an element substrate including a semiconductor element disposed on a substrate, a terminal for external connection disposed on a main surface of the substrate, and a first insulating layer disposed between the terminal and the main surface; an external connection member in which an electrode is electrically connected to the terminal via a resin member containing conductive particles, the elastic modulus of the first insulating layer is greater than 7 times the elastic modulus of the conductive particles; a second insulating layer disposed so as to cover a portion of the terminal; a wiring pattern and a plug connecting the wiring pattern and the terminal are disposed on the first insulating layer; the plug is disposed so as to overlap the second insulating layer in an orthogonal projection onto the main surface; the second insulating layer has a greater elastic modulus than the first insulating layer; A semiconductor device characterized in that, when the thickness of the second insulating layer is T and the diameter of the conductive particle before electrically connecting the terminal and the electrode is R, the relationship of 0.2R≦T≦0.9R is satisfied.

2. 2. The semiconductor device according to claim 1, wherein the elastic modulus of the first insulating layer is at least 10 times the elastic modulus of the conductive particles.

3. 2. The semiconductor device according to claim 1, wherein the conductive particles have an elastic modulus of 7 GPa or less.

4. 2. The semiconductor device according to claim 1, wherein a lower surface of the terminal is in contact with an upper surface of the first insulating layer.

5. 2. The semiconductor device according to claim 1, wherein the second insulating layer is disposed so as to cover an outer edge of the terminal.

6. a plurality of terminals including the terminal are arranged on the main surface; 2. The semiconductor device according to claim 1, wherein the second insulating layer is disposed between the plurality of terminals so as to cover the first insulating layer.

7. 2. The semiconductor device according to claim 1, wherein the second insulating layer has a thickness of 0.5 [mu]m or more.

8. 2. The semiconductor device according to claim 1, wherein the second insulating layer has a modulus of elasticity that is at least three times that of the first insulating layer.

9. 2. The semiconductor device according to claim 1, wherein the second insulating layer has a modulus of elasticity of 200 GPa or more.

10. An element substrate including a semiconductor element disposed on a substrate, a terminal for external connection disposed on a main surface of the substrate, and a first insulating layer disposed between the terminal and the main surface; an external connection member in which an electrode is electrically connected to the terminal via a resin member containing conductive particles, the elastic modulus of the first insulating layer is greater than 7 times the elastic modulus of the conductive particles; further including a second insulating layer disposed between the first insulating layer and the main surface; a wiring pattern is disposed on the second insulating layer; a plug is disposed in the first insulating layer and the second insulating layer, the plug penetrating the first insulating layer and connecting the wiring pattern and the terminal; A semiconductor device, wherein the elastic modulus of the first insulating layer is greater than the elastic modulus of the second insulating layer.

11. 11. The semiconductor device according to claim 10, wherein the first insulating layer is disposed so as to surround the terminal in an orthogonal projection onto the main surface.

12. 11. The semiconductor device according to claim 10, wherein, when the thickness of the first insulating layer is T and the thickness of the second insulating layer is T', the relationship of 0.25T'≦T≦0.5T' is satisfied.

13. 11. The semiconductor device according to claim 10, wherein the first insulating layer has a thickness of 0.2 [mu]m or more.

14. 11. The semiconductor device according to claim 10, wherein the first insulating layer has an elastic modulus of 200 GPa or more.

15. 11. The semiconductor device according to claim 10, further comprising a third insulating layer having a higher elastic modulus than the second insulating layer, the third insulating layer being disposed so as to cover a portion of the terminal.

16. 16. The semiconductor device according to claim 15, wherein the third insulating layer is disposed so as to cover an outer edge portion of the terminal in an orthogonal projection onto the main surface.

17. a plurality of terminals including the terminal are arranged on the main surface; 16. The semiconductor device according to claim 15, wherein the third insulating layer is disposed between each of the plurality of terminals so as to cover the first insulating layer and the second insulating layer.

18. 16. The semiconductor device according to claim 15, wherein the thickness of the third insulating layer is T and the diameter of the conductive particle before the terminal and the electrode are electrically connected is R, and the relationship of 0.2R≦T≦0.9R is satisfied.

19. 16. The semiconductor device according to claim 15, wherein the third insulating layer has a thickness of 0.5 [mu]m or more.

20. 16. The semiconductor device according to claim 15, wherein the elastic modulus of the third insulating layer is at least three times the elastic modulus of the second insulating layer.

21. 16. The semiconductor device according to claim 15, wherein the third insulating layer has an elastic modulus of 200 GPa or more.

22. 22. The semiconductor device according to claim 1, wherein a plurality of pixels, each including a light-emitting element, are arranged on the element substrate.

23. 23. A display device comprising: the semiconductor device according to claim 22; and an active element connected to the semiconductor device.

24. an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image; 23. A photoelectric conversion device, wherein the display section displays an image captured by the imaging element, and the photoelectric conversion device comprises the semiconductor device according to claim 22.

25. A display unit is provided in the housing, and a communication unit is provided in the housing and communicates with an external device.

23. An electronic device, wherein the display unit comprises the semiconductor device according to claim 22.

26. A lighting device having a light source and at least one of a light diffusion unit and an optical film, 23. A lighting device, wherein the light source comprises the semiconductor device according to claim 22.

27. A moving body having a body and a lighting fixture provided on the body, 23. A moving body, wherein the lighting fixture comprises the semiconductor device according to claim 22.

Images