Film deposition apparatus, film deposition method and manufacturing method

Abstract

To provide a technique advantageous for controlling the vapor deposition amount of a vapor deposition material with high accuracy.SOLUTION: A film deposition apparatus for depositing a film on a substrate through a mask includes: a vapor deposition source for discharging a vapor deposition material deposited on the substrate; and a limiting part for limiting the incidence area of the vapor deposition material discharged from the vapor deposition source to the mask. The limiting part includes: a plurality of limiting plates arranged in a direction normal to the film deposition surface of the substrate so as to surround the vapor deposition source; and an opening member provided on the mask side of the plurality of limiting plates and including an opening passing the vapor deposition material discharged from the vapor deposition source. Each of the plurality of limiting plates is obliquely provided so that an inner end part on the side of the vapor deposition source is closer to the mask from an outer end part on the side apart from the vapor deposition source; and the virtual line of each of the plurality of limiting plates extended toward the mask along a surface on the side of the vapor deposition source intersects the opening member or any of the plurality of limiting plates without passing through the opening.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus, a film forming method, and a manufacturing method. [Background technology]

[0002] Organic EL display devices (OLED displays) are being applied not only to smartphones, televisions, and automotive displays, but also to VR HMDs (Virtual Reality Head Mount Displays), etc. In particular, display devices used in VR and HMDs are required to form pixel patterns with high resolution in order to reduce dizziness in users, and further improvements in resolution are required.

[0003] In the manufacture of organic EL displays, a film-forming device is used to form the organic light-emitting elements (organic EL elements: OLEDs) that make up the organic EL display. The film-forming device forms an organic film or a metal film by attaching (forming a film) a deposition material (film-forming material) emitted from an evaporation source (film-forming source) onto a substrate through a mask on which a pattern corresponding to the pixel pattern is formed.

[0004] As an example of such a film forming apparatus, a film forming apparatus equipped with a limiting plate that limits the incidence of a deposition material from an evaporation source onto a substrate has been proposed (see Patent Document 1). Patent Document 1 discloses a technique in which the limiting plate is inclined toward the evaporation source to suppress the amount of radiant heat (secondary radiation) incident from the limiting plate onto a mask or substrate, and the deposition material from the evaporation source is made to adhere to the limiting plate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2021-080560 A Summary of the Invention [Problem to be solved by the invention]

[0006] However, in the conventional technology, the deposition material attached to the limiting plate becomes a secondary evaporation source, and there is a possibility that the deposition material may enter (adhere to) the substrate. In such a case, it becomes difficult to control with high precision the amount of deposition material attached to the substrate (deposition amount), which leads to a deterioration in the quality of the film formed on the substrate.

[0007] The present invention has been made in consideration of the above problems of the conventional technology, and has an exemplary object to provide a technology that is advantageous for controlling the deposition amount of a deposition material with high precision. [Means for solving the problem]

[0008] In order to achieve the above object, a film formation apparatus according to one aspect of the present invention is a film formation apparatus that forms a film on a substrate via a mask, the film formation apparatus including: a deposition source that emits a deposition material to be attached to the substrate; and a limiting portion that limits an incidence area of ​​the deposition material emitted from the deposition source with respect to the mask, the limiting portion including: a plurality of limiting plates that are arranged along a direction normal to a deposition surface of the substrate so as to surround the deposition source; and an aperture member that is provided on the mask side of the plurality of limiting plates and includes an opening through which the deposition material emitted from the deposition source passes, each of the plurality of limiting plates is inclined such that an inner end on the deposition source side is closer to the mask than an outer end on a side away from the deposition source, and a virtual line extended toward the mask along a surface of each of the plurality of limiting plates on the deposition source side intersects with the opening member or any of the plurality of limiting plates without passing through the opening.

[0009] Further objects or other aspects of the present invention will become apparent from the following description of the embodiments with reference to the accompanying drawings. Effect of the Invention

[0010] According to the present invention, for example, it is possible to provide a technique that is advantageous for controlling the deposition amount of a deposition material with high precision. [Brief description of the drawings]

[0011] [Figure 1] 1 is a plan view showing a schematic configuration of a film formation system having a film formation apparatus according to one aspect of the present invention. [Diagram 2] 1 is a front view showing a schematic configuration of a film forming apparatus according to one aspect of the present invention; [Diagram 3] FIG. 2 is a diagram illustrating a configuration of a limiting unit of the film forming apparatus. [Figure 4] 13A and 13B are diagrams for explaining optimization of the arrangement of a plurality of limiting plates of the limiting portion. [Diagram 5] FIG. 1 is a diagram for explaining an organic EL display device as an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0013] FIG. 1 is a plan view showing a schematic configuration of a film formation system SY having a film formation apparatus 1 according to one aspect of the present invention. The film formation system SY is a system that performs a film formation process on a substrate that is carried in and carries out the substrate that has been subjected to the film formation process. For example, a manufacturing line for electronic devices is configured by arranging a plurality of film formation systems SY side by side. The film formation system SY (film formation apparatus 1) is particularly suitable as a system for manufacturing organic light-emitting elements such as OLEDs and organic photoelectric conversion elements such as organic thin-film solar cells. Examples of electronic devices include light-emitting elements, photoelectric conversion elements, and touch panels. In this embodiment, the electronic devices include display devices (e.g., organic EL display devices) and lighting devices (e.g., organic EL lighting devices) equipped with light-emitting elements, and sensors (e.g., organic CMOS image sensors) equipped with photoelectric conversion elements.

[0014] In this embodiment, the film forming system SY is embodied as a system for manufacturing a display panel of an organic EL display device for a smartphone or a display panel of an organic EL display device for a VR HMD. When manufacturing a display panel for a smartphone, a 4.5 generation substrate (about 700 mm x about 900 mm), a 6 generation full size substrate (about 1500 mm x about 1850 mm), or a half cut size substrate (about 1500 mm x about 925 mm) is used. Films are formed on such substrates to form organic EL elements, and the substrates are cut out to manufacture a plurality of small size panels. When manufacturing a display panel for a VR HMD, a silicon wafer of a predetermined size (for example, 300 mm) is used. Films are formed on such silicon wafers to form organic EL elements, and the silicon wafer is cut out along the regions (scribe regions) between the element formation regions to manufacture a plurality of small size panels. However, the size and type of the substrate are not particularly limited and can be set appropriately.

[0015] 1, the film formation system SY includes a film formation apparatus 1 that performs processing (e.g., film formation) on a substrate W, a carry-in chamber 60, a substrate transfer chamber 62, an unloading chamber 64, and a mask stock chamber 66. The configuration of the film formation apparatus 1 will be described in detail later.

[0016] The substrate SB to be subjected to the film formation process in the film formation apparatus 1 is carried into the carry-in chamber 60 from the outside. The substrate transfer chamber 62 is provided with a transfer robot 70 for transferring the substrate SB and the mask MS. The transfer robot 70 transfers the substrate SB carried into the carry-in chamber 60 to the film formation apparatus 1. The transfer robot 70 also transfers the substrate SB to the carry-out chamber 64, which has been subjected to the film formation process in the film formation apparatus 1. The substrate SB transferred to the carry-out chamber 64 by the transfer robot 70 is carried out from the carry-out chamber 64 to the outside of the film formation system SY. When a plurality of film formation systems SY are installed side by side, the carry-out chamber 64 of the upstream film formation system SY may also serve as the substrate transfer chamber 62 of the downstream film formation system SY. The mask stock chamber 66 stores the mask MS to be used for the film formation process in the film formation apparatus 1. The mask MS has a pattern (opening) formed thereon, which corresponds to a pattern to be formed on the substrate SB, for example, a pixel pattern. The mask MS stored in the mask stock chamber 66 is transferred to the film forming apparatus 1 by the transfer robot .

[0017] The inside of the film forming apparatus 1 and each chamber constituting the film forming system SY is maintained in a vacuum state by an exhaust mechanism such as a vacuum pump. In this embodiment, the "vacuum state" means a state filled with gas at a pressure lower than atmospheric pressure, that is, a reduced pressure state.

[0018] 2 is a front view showing a schematic configuration of a film forming apparatus 1 according to one aspect of the present invention. In the following drawings, arrows X and Y indicate horizontal directions that are perpendicular to each other, and arrow Z indicates a vertical direction.

[0019] The film forming apparatus 1 is an apparatus for performing a film forming process (i.e., forming a film on the substrate SB through the mask MS) in which a deposition material emitted from a deposition source is attached (deposited) onto the substrate SB through a mask MS to form a film (thin film) on the substrate SB. As described above, a production line is formed by arranging a plurality of film forming apparatuses 1 side by side. The material of the substrate SB on which the film forming process is performed in the film forming apparatus 1 can be appropriately selected from glass, resin, metal, etc., and in particular, glass having a resin layer such as polyimide formed thereon is preferable. The deposition material is, for example, an organic material or an inorganic material (e.g., metal, metal oxide).

[0020] In this embodiment, the film forming apparatus 1 has a so-called upward deposition type (deposit up) configuration in which a film forming process is performed with the film forming surface of the substrate SB facing downward in the vertical direction (Z direction), but is not limited to this. For example, the film forming apparatus 1 may adopt a configuration in which film formation is performed with the film forming surface of the substrate SB facing parallel to the direction of gravity.

[0021] 2, the film formation apparatus 1 includes an evaporation source unit 10, a driving section 20, and film formation stages 30A and 30B. The evaporation source unit 10, the driving section 20, and the film formation stages 30A and 30B are disposed inside a chamber that is maintained in a vacuum state during a film formation process (when in use). In this embodiment, the film formation stages 30A and 30B are provided in the chamber and spaced apart from each other in the Y direction, and the evaporation source unit 10 is provided below them. The chamber is also provided with a plurality of loading / unloading ports (not shown) for loading and unloading the substrate SB.

[0022] The film forming apparatus 1 further includes a control unit CU that controls (the operation of) each component of the film forming apparatus 1. The control unit CU is configured, for example, by a computer (information processing device) including a processor represented by a CPU, memories such as RAM and ROM, and various interfaces. The control unit CU realizes various operations and processes in the film forming apparatus 1 by reading out a program stored in the ROM into the RAM and executing it. Note that, instead of the control unit CU, it is also possible to directly control each component of the film forming apparatus 1 using a host computer that comprehensively controls the film forming system SY.

[0023] The film formation stage 30A is a stage for performing a film formation process on the substrate SBa. The film formation stage 30A holds (supports) the substrate SBa and the mask MSa, and includes a substrate holding part 32A, a mask holding part 34A, and an alignment mechanism 36A.

[0024] The substrate holding unit 32A holds the substrate SBa. The substrate holding unit 32A holds the substrate SBa by adsorbing the substrate SBa with, for example, an electrostatic chuck or an adhesive chuck. The substrate holding unit 32A receives the substrate SBa that has been carried into the film forming system SY via a transfer robot 70 provided in the substrate transfer chamber 62. The substrate holding unit 32A is also provided with a lifting mechanism (not shown) that enables the substrate holding unit 32A to be raised and lowered, and the substrate SBa received from the transfer robot 70 can be superimposed on the mask MSa held by the mask holding unit 34A. For such a lifting mechanism, a technique well known in the art, such as a ball screw mechanism, can be applied.

[0025] The mask holding part 34A holds the mask MSa. In this embodiment, an opening (not shown) is provided in the mask holding part 34A, and a deposition material adheres to (enters) a film formation surface (a surface on which a film is formed) of the substrate SBa superimposed on the mask MSa through the opening.

[0026] The alignment mechanism 36A performs alignment to adjust the relative positions of the substrate SBa and the mask MSa. The alignment mechanism 36A adjusts the relative positions of the substrate holder 32A and the mask holder 34A in the horizontal direction to perform alignment between the substrate SBa held by the substrate holder 32A and the mask MSa held by the mask holder 34A. A technique well known in the art can be applied to the alignment between the substrate SBa and the mask MSa. For example, the alignment mechanism 36A first detects alignment marks formed on the substrate SBa and the mask MSa with a camera (not shown). Then, the alignment mechanism 36A adjusts the positional relationship between the substrate SBa and the mask MSa so that the relationship between the position of the substrate SBa and the position of the mask MSa obtained by detecting these marks satisfies a predetermined condition. Specifically, a mark formed on the substrate SBa is superimposed on a mark formed on the mask MSa, the amount of misalignment between these marks is detected by a camera, and the position of the substrate SBa is adjusted so that specified conditions are satisfied (so that it falls within the tolerance range).

[0027] After the alignment mechanism 36A aligns the substrate SBa and the mask MSa, the substrate holder 32A aligns the substrate SBa held by the substrate holder 32A on the mask MSa. In the state in which the substrate SBa and the mask MSa are aligned, a film formation process is performed on the substrate SBa by the deposition source unit 10.

[0028] The deposition stage 30B includes the same configuration as the deposition stage 30A. The deposition stage 30B includes a substrate holding part 32B, a mask holding part 34B, and an alignment mechanism 36B. The substrate holding part 32B, the mask holding part 34B, and the alignment mechanism 36B correspond to the substrate holding part 32A, the mask holding part 34A, and the alignment mechanism 36A, respectively.

[0029] In this embodiment, the film forming apparatus 1 has a plurality of film forming stages 30A and 30B, and is realized as a so-called dual-stage film forming apparatus. Therefore, while a film forming process (such as vapor deposition) is performed on the substrate SBa in the film forming stage 30A, it is possible to align the substrate SBb and the mask MSb in the film forming stage 30B, and the film forming process can be performed efficiently. However, the film forming apparatus 1 may be configured as a single-stage film forming apparatus having one film forming stage.

[0030] The deposition source unit 10 is a unit for performing a film formation process on the substrate SB. The deposition source unit 10 includes a container (crucible) for containing a deposition material (raw material), and a heating unit such as a heater for heating the container. The container is provided, for example, at its upper portion (top) with an outlet (opening) for discharging the deposition material evaporated or sublimated inside the material container to the outside of the material container. The heating unit is provided, for example, so as to cover the entire material container, and heats the deposition material contained in the material container to evaporate or sublimate it. In this way, the container and the heating unit function as a deposition source for discharging the deposition material to be attached to the substrate SB.

[0031] The driving unit 20 drives the deposition source unit 10 relatively to the mask MS and the substrate SB. In this embodiment, the driving unit 20 drives the deposition source unit 10 to reciprocate in the direction in which the film formation stages 30A and 30B are arranged (Y direction). The driving unit 20 may be any technology known in the art. For example, the driving unit 20 drives the deposition source unit 10 along a pair of fixed rails 35 provided on the floor of the film formation apparatus 1 by a driving source such as an actuator or a ball screw mechanism. In this embodiment, a film formation process is performed in which a deposition material discharged from the deposition source unit 10 is attached (deposited) onto the substrate SB while the driving unit 20 drives the deposition source unit 10 relative to the mask MS and the substrate SB, thereby forming a film (layer) of the deposition material on the substrate SB.

[0032] The film formation apparatus 1 may further include a shutter between the deposition source unit 10 and each of the film formation stages 30A and 30B for controlling the incidence (scattering) of the deposition material discharged from the deposition source unit 10 onto the substrate SB. The shutter is provided drivable between a blocking position for blocking the deposition material discharged from the deposition source unit 10 from incidence onto the substrate SB and a permitting position for permitting the deposition material to be incident onto the substrate SB.

[0033] As shown in FIG. 3, the film forming apparatus 1 includes a limiting unit 100 disposed in a chamber of the film forming apparatus 1 in addition to the shutter described above, and for defining a release range ER of the deposition material released from the deposition source ES of the deposition source unit 10 to the mask MS and the substrate SB. FIG. 3 is a diagram showing a schematic configuration of the limiting unit 100. The limiting unit 100 includes a plurality of limiting plates 120 and an opening member 140, and has a function of limiting an incidence area of ​​the deposition material released from the deposition source ES to the mask MS and the substrate SB. By providing the limiting unit 100, it is possible to set an incidence area where the deposition material is incident on the mask MS and the substrate SB, that is, an area where the deposition material is deposited to form a film, to an arbitrary area. The limiting unit 100 also functions as a member for preventing the deposition material released from the deposition source ES, which is scattered in a direction other than the direction toward the mask MS and the substrate SB, from depositing on other components other than the mask MS and the substrate SB.

[0034] The limiting plates 120 are made of, for example, metal plate members such as stainless steel or aluminum. The limiting plates 120 are arranged along the direction of the normal to the film formation surface of the substrate SB (Z direction) so as to surround the deposition source ES of the deposition source unit 10. In particular, in this embodiment, as shown in FIG. 3, each of the limiting plates 120 is made of a blade plate, and all of the limiting plates 120 are provided in a louver shape spaced apart from each other (with gaps). However, it is not necessary to provide all of the limiting plates 120 in a louver shape, and it is sufficient that at least two of the limiting plates 120 are provided in a louver shape.

[0035] In this embodiment, the limiting plates 120 are provided at an incline inside the chamber of the film forming apparatus 1. Specifically, the limiting plates 120 are provided at an incline such that an inner end 122 on the deposition source ES side of the deposition source unit 10 is closer to the mask MS and the substrate SB than an outer end 124 on the side (outside) away from the deposition source ES. For example, the limiting plates 120 may be provided rotatably with respect to two of four columnar members (not shown).

[0036] The opening member 140 is made of a plate member made of metal such as stainless steel or aluminum, similar to the limiting plate 120. The opening member 140 has an opening 142 formed in an upper portion corresponding to the deposition source ES (the emission port) of the deposition source unit 10, through which the deposition material emitted from the deposition source ES (emission port) passes.

[0037] The opening member 140 is provided on the mask MS side of the multiple limiting plates 120, specifically, between the mask MS and the limiting plate 120 arranged closest to the mask MS among the multiple limiting plates 120. This makes it possible to easily configure the limiting section 100 including the multiple limiting plates 120 and the opening member 140. However, the opening member 140 may be provided between the multiple limiting plates 120.

[0038] In this embodiment, a plurality of limiting plates 120 and an opening member 140 (limiting portion 100) having such a configuration are provided around (on the sides or above) the deposition source ES of the deposition source unit 10. Therefore, among the deposition material emitted from the deposition source ES, only the deposition material that passes through the opening 142 of the opening member 140 adheres to the substrate SB through the mask MS. On the other hand, among the deposition material emitted from the deposition source ES, the deposition material that does not pass through the opening 142 of the opening member 140 adheres to the plurality of limiting plates 120 (the surfaces of the deposition source ES side) and the opening member 140 (the portions excluding the opening 142).

[0039] In the film forming apparatus 1, the deposition material adhered to the limiting plate 120 of the limiting part 100 may be detached from the limiting plate 120 and may be incident (re-adhered) to the substrate SB as the temperature of the limiting plate 120 increases due to radiant heat from the deposition source ES. In other words, the deposition material adhered to the limiting plate 120 may become a secondary evaporation source. In such a case, it becomes difficult to control with high precision the amount of the deposition material adhered to the substrate SB, which may result in a deterioration in the quality of the film formed on the substrate SB.

[0040] Therefore, in this embodiment, in order to prevent the deposition material adhering to the limiting plates 120 of the limiting unit 100 from being incident on the substrate SB and re-adhering thereto, the arrangement of the multiple limiting plates 120 is optimized as described below.

[0041] In this embodiment, as described above, the multiple limiting plates 120 are provided at an incline inside the chamber of the film formation apparatus 1. Here, as shown in Fig. 4, an angle between each of the multiple limiting plates 120 and a direction (horizontal direction (X direction)) perpendicular to a normal line NL of the film formation surface of the substrate SB is defined as an inclination angle θ, and the inclination angle θ of each of the limiting plates 120 is specified to optimize the arrangement of the multiple limiting plates 120.

[0042] Specifically, the limiting plates 120 are provided along the surface 126 of each of the limiting plates 120 on the side of the deposition source ES so that the virtual line VL extending toward the mask MS does not pass through the opening 142 of the opening member 140. Furthermore, the limiting plates 120 are provided so that the virtual line VL intersects with either the opening member 140 or the limiting plates 120. In other words, the inclination angle θ of each limiting plate 120 provided at an angle inside the chamber of the film forming apparatus 1 is specified so that the virtual line VL does not pass through the opening 142 of the opening member 140 and intersects with either the opening member 140 or the limiting plates 120. As a result, even if the deposition material attached to the limiting plate 120 is detached from the limiting plate 120, the deposition material cannot pass through the opening 142 of the opening member 140 and adheres (re-attached) to one of the other limiting plates 120. Note that there is a possibility that the deposition material detached from the limiting plate 120 passes between the multiple limiting plates 120. However, as described above, the limiting plate 120 is inclined so that the inner end 122 is closer to the mask MS and the substrate SB than the outer end 124, and therefore the deposition material detached from the limiting plate 120 does not reach the mask MS or the substrate SB. Therefore, in this embodiment, it is possible to prevent the deposition material attached to the limiting plate 120 from entering the substrate SB and re-adhering thereto (i.e., passing through the opening 142 of the opening member 140).

[0043] In this embodiment, the multiple limiting plates 120 are provided so that the inclination angle θ (inclination) varies depending on the relative position with respect to the mask MS, that is, the distance from the mask MS in the direction of the normal line NL (Z direction). Specifically, the multiple limiting plates 120 are provided so that the inclination angle θ increases (the inclination becomes stronger) as the distance from the mask MS in the direction of the normal line NL increases (farther). For example, if the inclination angle of the limiting plate 120 arranged on the mask MS side is θ1, the inclination angle of the limiting plate 120 arranged at the midpoint between the mask MS and the deposition source ES is θ2, and the inclination angle of the limiting plate 120 arranged on the deposition source ES side is θ3, then θ1<θ2<θ3. In this way, by providing the multiple limiting plates 120 so that the inclination angle θ varies depending on the distance from the mask MS, it is possible to realize a condition in which the virtual line VL does not pass through the opening 142 of the opening member 140 and intersects with either the opening member 140 or the multiple limiting plates 120.

[0044] In this embodiment, as described above, the deposition source unit 10, i.e., the deposition source ES, is configured to be driven relatively to the mask MS and the substrate SB by the driving unit 20. Therefore, it is preferable that the limiting unit 100 provided around the deposition source ES is also configured to be driven in synchronization with the driving of the deposition source ES. Therefore, as shown in FIG. 3, the limiting unit 100 is configured to be driven together with the deposition source ES by the driving unit 20 while maintaining the positional relationship between the deposition source ES and the multiple limiting plates 120 and the opening member 140. As a result, even if the deposition source unit 10 is driven during the film formation process, the positional relationship between the deposition source ES and the limiting unit 100 is maintained, so that the deposition material attached to the limiting plate 120 can be prevented from entering the substrate SB and re-adhering thereto.

[0045] In the present embodiment, it is assumed that the inclination angle θ of each of the limiting plates 120 is set, for example, when the film forming apparatus 1 is assembled (started up) or during maintenance, and is maintained constant (fixed) thereafter, but is not limited thereto. For example, in order to make the inclination angle θ of each of the limiting plates 120 changeable depending on the use conditions (film forming conditions, etc.) of the film forming apparatus 1 or replacement of the deposition source ES, a driving mechanism that changes the inclination angle θ of each of the limiting plates 120 may be provided.

[0046] In this manner, in the film forming apparatus 1 of the present embodiment, the limiting portion 100 is provided inside the chamber, and the arrangement of the limiting plates 120 included in the limiting portion 100, i.e., the inclination angle θ of each limiting plate 120, is optimized. This prevents the deposition material adhering to the limiting plates 120 from entering the substrate SB and re-adhering thereto. Therefore, according to the film forming apparatus 1, it is possible to control with high precision the amount of deposition material to be adhered to the substrate SB, and the quality of the film formed on the substrate SB can be maintained at a high quality by suppressing deterioration of the quality.

[0047] Next, a method for manufacturing an electronic device using the film formation apparatus 1 (or a film formation system SY having the film formation apparatus 1) in this embodiment will be described. Here, an organic EL display device will be taken as an example of the electronic device.

[0048] First, an organic EL display device will be described. Fig. 5(a) is a diagram showing the overall configuration of an organic EL display device 600. Fig. 5(b) is a diagram showing the cross-sectional structure of one pixel of the organic EL display device 600.

[0049] As shown in FIG. 5(a), the organic EL display device 600 has a display area 610 in which pixels 620 including a plurality of light-emitting elements are arranged in a matrix. As described later, each of the plurality of light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. In this embodiment, a pixel means a minimum unit that allows a predetermined color to be displayed in the display area 610. For example, in the organic EL display device 600, the pixel 620 is configured by a combination of a first light-emitting element 620R, a second light-emitting element 620G, and a third light-emitting element 620B that allow different colors to be displayed. The pixel 620 is generally configured by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but is not limited thereto. For example, the pixel 620 may be configured by a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and may be configured by at least one color of light-emitting element.

[0050] FIG. 5(b) is a partial cross-sectional view taken along the line AB in FIG. 5(a). The pixel 620 is made of an organic EL element having an anode 640, a hole transport layer 650, any one of the light-emitting layers 660R, 660G, and 660B, an electron transport layer 670, and a cathode 680 on a substrate 630. Among these, the hole transport layer 650, the light-emitting layers 660R, 660G, and 660B, and the electron transport layer 670 correspond to organic layers. In this embodiment, the light-emitting layer 660R is an organic EL layer that emits red light, the light-emitting layer 660G is an organic EL layer that emits green light, and the light-emitting layer 660B is an organic EL layer that emits blue light. The light-emitting layers 660R, 660G, and 660B are formed in patterns corresponding to the light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively. The anode 640 is formed separately for each light-emitting element. The hole transport layer 650, the electron transport layer 670, and the cathode 680 may be formed in common with the plurality of light emitting layers 660R, 660G, and 660B, or may be formed for each light emitting element. In order to prevent the anode 640 and the cathode 680 from being shorted due to foreign matter, an insulating layer 690 is provided between the anodes. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 700 is provided to protect the organic EL element from moisture and oxygen.

[0051] 5(b), the hole transport layer 650 and the electron transport layer 670 are shown as one layer, but may be formed of multiple layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL element. In addition, a hole injection layer having an energy band structure for smoothly injecting holes from the anode 640 to the hole transport layer 650 may be formed between the anode 640 and the hole transport layer 650. Similarly, an electron injection layer may be formed between the cathode 680 and the electron transport layer 670.

[0052] A method for manufacturing an organic EL display device will now be described.

[0053] First, a substrate 630 on which a circuit (not shown) for driving the organic EL display device and an anode 640 are formed is prepared.

[0054] Next, acrylic resin is formed by spin coating on the substrate 630 on which the anode 640 is formed, and patterned by lithography so that an opening is formed in the portion of the acrylic resin where the anode 640 is formed, to form an insulating layer 690. Such an opening corresponds to a light-emitting region where the light-emitting element actually emits light.

[0055] The substrate 630 with the patterned insulating layer 690 is carried into a film forming apparatus 1 (first film forming apparatus) of the film forming system SY and held by a substrate holding unit (such as a chuck), and a hole transport layer 650 is formed as a common layer on the anode 640 of the display region 610. The hole transport layer 650 is formed by, for example, vacuum deposition. Since the hole transport layer 650 is actually formed to be larger in size than the display region 610, no high-resolution mask is required.

[0056] Next, the substrate 630 on which the hole transport layer 650 has been formed is carried into the film forming apparatus 1 (second film forming apparatus) and held by a substrate holding part. The substrate 630 and the mask are aligned and overlapped with each other, and a red light emitting layer 660R is formed on a portion of the substrate 630 where a red light emitting element is to be formed.

[0057] Similar to the formation of the light-emitting layer 660R, a light-emitting layer 660G emitting green light is formed in the film formation apparatus 1 (third film formation apparatus), and further, a light-emitting layer 660B emitting blue light is formed in the film formation apparatus 1 (fourth film formation apparatus). After the light-emitting layers 660R, 660G, and 660B are formed, an electron transport layer 670 is formed over the entire display region 610 in the film formation apparatus 1 (fifth film formation apparatus). The electron transport layer 670 is formed as a layer common to the three light-emitting layers 660R, 660G, and 660B.

[0058] Next, the substrate 630 on which the electron transport layer 670 has been formed is carried into a film forming apparatus 1 (a metal evaporation material film forming apparatus), and a cathode 680 is formed.

[0059] Then, the substrate 630 on which the cathode 680 has been formed is carried into a plasma CVD apparatus, and the protective layer 700 is formed, and the organic EL display device 600 is completed.

[0060] In addition, if the substrate 630 on which the insulating layer 690 is patterned is exposed to an atmosphere containing moisture or oxygen during the period from when the substrate 630 is carried into the film forming apparatus 1 until when the protective layer 700 is formed, the light emitting layer made of an organic EL material may deteriorate. Therefore, the substrate 630 is preferably carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0061] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0062] 1: Film forming apparatus 10: Evaporation source unit 100: Limiting portion 120: Limiting plate 140: Opening member 142: Opening SB, SBa, SBb: Substrate MS, MSa, MSb: Mask ES: Evaporation source

Claims

1. A film forming apparatus for forming a film on a substrate through a mask, comprising: a vapor deposition source that releases a vapor deposition material to be adhered to the substrate; a restricting portion that restricts an incident region of the vapor deposition material released from the vapor deposition source with respect to the mask; and having wherein the restricting portion includes a plurality of restricting plates arranged along the direction of the normal to the film forming surface of the substrate so as to surround the vapor deposition source; an opening member provided on the mask side of the plurality of restricting plates and including an opening through which the vapor deposition material released from the vapor deposition source passes; and including each of the plurality of restricting plates is provided to be inclined such that an inner end portion on the vapor deposition source side is closer to the mask than an outer end portion on the side away from the vapor deposition source; at least two of the plurality of restricting plates are provided in a louver shape with a gap therebetween; a virtual line extending toward the mask along the surface of each of the plurality of restricting plates on the vapor deposition source side does not pass through the opening and intersects either the opening member or one of the plurality of restricting plates; A film forming apparatus characterized by the above.

2. The film forming apparatus according to claim 1, wherein each of the plurality of restricting plates is composed of a blade and is provided in a louver shape with a gap therebetween.

3. The film forming apparatus according to claim 1, further comprising a driving portion that relatively drives the vapor deposition source with respect to the mask and the substrate.

4. The film forming apparatus according to claim 3, wherein the driving portion drives the restricting portion together with the vapor deposition source while maintaining the positional relationship between the vapor deposition source and the restricting portion.

5. The film forming apparatus according to claim 1, wherein the opening member is provided between the restricting plate closest to the mask among the plurality of restricting plates and the mask.

6. The film forming apparatus according to claim 1, wherein the plurality of restricting plates are provided such that the inclination varies according to the distance from the mask in the direction of the normal.

7. The film forming apparatus according to claim 1, wherein the plurality of restricting plates are provided such that the inclination becomes stronger as the distance from the mask in the direction of the normal increases.

8. A film forming method characterized by forming a film on a substrate through a mask using the film forming apparatus according to any one of claims 1 to 7.

9. A manufacturing method characterized by manufacturing an electronic device using the film forming method according to claim 8.

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