Light-emitting device

Abstract

To provide a light-emitting device which has a high luminance region in a light-emitting surface.SOLUTION: A light-emitting device 100 has a first light-emitting region R1 and a second light-emitting region R2 on its upper surface. The light-emitting device includes: a light-emitting element 10; a translucent member 20 which has a first upper surface 20a, a second upper surface 20b, a lower surface 20c, a first lateral surface 20d, a second lateral surface 20e, and a third lateral surface 20f, and whose thickness from the lower surface 20c to the first upper surface 20a is greater than its thickness from the lower surface 20c to the second upper surface 20b; and a light-adjustment member 31. An area of the second light-emitting region R2 ranges from 35 to 95% of an area of the light-emitting regions. A border between the first light-emitting region R1 and the second light-emitting region R2 has a first point and a second point which make contact with an outer periphery of the light-emitting regions. In plan view, a straight line connecting the first point to the second point is a straight line traversing the light-emitting regions.SELECTED DRAWING: Figure 1D

Description

[Technical field]

[0001] The present disclosure relates to a light emitting device. [Background technology]

[0002] In recent years, LEDs have been used as light sources for vehicle lighting such as headlights, etc. For example, Patent Document 1 discloses a light emitting device that has a light distribution suitable for a headlight by combining a plurality of light emitting elements with different areas. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-011259 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a light emitting device having a high brightness region within its light emitting surface. [Means for solving the problem]

[0005] A light emitting device according to an embodiment of the present disclosure is a light emitting device having, on an upper surface thereof, a light emitting region including a first light emitting region and a second light emitting region disposed adjacent to the first light emitting region, the light emitting device including: a supporting substrate having a first surface and a second surface located on the opposite side to the first surface; and a light emitting portion disposed on the second surface of the supporting substrate, the light emitting portion including a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer in that order; and a first upper surface, a second upper surface, a lower surface located on the opposite side to the first upper surface and the second upper surface, a first side surface continuing between the first upper surface and the second upper surface, a second side surface continuing between the second upper surface and the lower surface, and a third side surface continuing between the first upper surface and the lower surface, a light-transmitting member having a thickness from the first upper surface to the first top surface that is greater than a thickness from the bottom surface to the second top surface and arranged such that the bottom surface faces a first surface of the supporting substrate; and a light adjusting member exposing the first top surface of the light-transmitting member and covering the second top surface and the first side surface, wherein in a planar view, the first light-emitting region includes the first top surface and the second light-emitting region includes the second top surface, an area of ​​the second light-emitting region is 35% or more and 95% or less of an area of ​​the light-emitting region, a boundary between the first light-emitting region and the second light-emitting region has a first point and a second point that are tangent to an outer periphery of the light-emitting region, and in a planar view, a straight line connecting the first point and the second point is a straight line that crosses the light-emitting region. Effect of the Invention

[0006] According to an embodiment of the present disclosure, a light emitting device having a high brightness region within its light emitting surface can be provided. [Brief description of the drawings]

[0007] [Figure 1A] FIG. 1 is a perspective view illustrating a light emitting device according to a first embodiment. [Figure 1B] FIG. 1 is a plan view illustrating a light emitting device according to a first embodiment. [Figure 1C] FIG. 2 is a schematic plan view illustrating the shape of a light emitting region of the light emitting device according to the first embodiment. [Figure 1D] 1C is a cross-sectional view that illustrates a cross section taken along line ID-ID in FIG. 1B. [Figure 1E]FIG. 2 is a bottom view diagrammatically illustrating a light emitting element of the light emitting device according to the first embodiment. [Figure 1F] 1 is a cross-sectional view illustrating a schematic view of a light-emitting element of the light-emitting device according to the first embodiment. [Figure 1G] FIG. 2 is a schematic plan view illustrating a wiring substrate of the light emitting device according to the first embodiment. [Figure 1H] FIG. 2 is a plan view illustrating a schematic diagram of a wiring substrate of the light emitting device according to the first embodiment. [Diagram 2] 2 is a cross-sectional view showing a schematic diagram of a light path from a light-emitting portion of the light-emitting device according to the first embodiment. FIG. [Diagram 3] 4 is a flowchart of a method for manufacturing the light emitting device according to the first embodiment. [Figure 4A] 2A to 2C are plan views each showing a schematic diagram of a method for manufacturing the light emitting device according to the first embodiment. [Figure 4B] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4C] 2A to 2C are plan views each showing a schematic diagram of a method for manufacturing the light emitting device according to the first embodiment. [Figure 4D] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4E] 2A to 2C are plan views each showing a schematic diagram of a method for manufacturing the light emitting device according to the first embodiment. [Figure 4F] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4G] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4H] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4I] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4J] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 5A] FIG. 11 is a cross-sectional view illustrating a light emitting device according to a second embodiment. [Figure 5B]FIG. 11 is a cross-sectional view illustrating a light emitting device according to a third embodiment. [Figure 5C] FIG. 11 is a cross-sectional view illustrating a schematic view of a light-emitting device according to a fourth embodiment. [Figure 5D] FIG. 13 is a cross-sectional view illustrating a schematic view of a light-emitting device according to a fifth embodiment. [Figure 6] FIG. 13 is a cross-sectional view illustrating a schematic view of a light-emitting device according to a sixth embodiment. [Figure 7] FIG. 13 is a cross-sectional view illustrating a schematic view of a light-emitting device according to a seventh embodiment. [Figure 8A] FIG. 13 is a schematic plan view illustrating the shape of a light emitting region of the light emitting device according to the eighth embodiment [Figure 8B] FIG. 13 is a schematic plan view illustrating the shape of a light emitting region of the light emitting device according to the ninth [Figure 9] FIG. 23 is a cross-sectional view illustrating a schematic view of a light-emitting device according to a tenth embodiment. [Figure 10] FIG. 21 is a cross-sectional view illustrating a schematic view of a light-emitting device according to an eleventh embodiment. [Figure 11] FIG. 23 is a cross-sectional view illustrating a schematic view of a light-emitting device according to a twelfth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] The embodiment will be described below with reference to the drawings. However, the following embodiments are illustrative of a light-emitting device and a method for manufacturing a light-emitting device for embodying the technical idea of ​​the present embodiment, and are not limited to the following. Furthermore, the dimensions, materials, shapes, and relative positions of the components described in the embodiments are merely illustrative, and are not intended to limit the scope of the present invention, unless otherwise specified. The size and positional relationship of the components shown in each drawing may be exaggerated or simplified to clarify the explanation. In addition, in order to avoid the drawings becoming excessively complicated, some elements may be omitted from the illustration, or an end view showing only the cut surface may be used as a cross-sectional view. Furthermore, "covering" is not limited to direct contact, but also includes indirect covering, for example, via other members. Furthermore, "disposing" is not limited to direct contact, but also includes indirect disposing, for example, via other members. In this specification, "planar view" means observing from the top side, which is the light-emitting surface of the light-emitting device.

[0009] First Embodiment [Light emitting device] FIG. 1A is a perspective view that shows a light emitting device according to the first embodiment. FIG. 1B is a plan view that shows a light emitting device according to the first embodiment. FIG. 1C is a plan view that shows a shape of a light emitting region of the light emitting device according to the first embodiment. FIG. 1D is a cross-sectional view that shows a cross section along the line ID-ID in FIG. 1B. FIG. 1E is a bottom view that shows a light emitting element of the light emitting device according to the first embodiment. FIG. 1F is a cross-sectional view that shows a light emitting element of the light emitting device according to the first embodiment. FIG. 1G is a plan view that shows a wiring board of the light emitting device according to the first embodiment. FIG. 1H is a plan view that shows a wiring board of the light emitting device according to the first embodiment. FIG. 2 is a cross-sectional view that shows a light path from a light emitting unit of the light emitting device according to the first embodiment.

[0010] The light emitting device 100 has a light emitting region R on its upper surface, the light emitting region R including a first light emitting region R1 and a second light emitting region R2 disposed adjacent to the first light emitting region R1. The light emitting device 100 includes at least a light emitting element 10, a light transmissive member 20, and a light adjusting member 30. Specifically, the light emitting device 100 includes a light emitting element 10 having a support substrate 15 having a first surface 15a and a second surface 15b located on the opposite side of the first surface 15a, light emitting units 11 and 12 disposed on the second surface 15b of the support substrate 15 and including semiconductor laminates having first semiconductor layers 111 and 121, light emitting layers 112 and 122, and second semiconductor layers 113 and 123 in that order, a first upper surface 20a, a second upper surface 20b, a lower surface 20c located on the opposite side of the first upper surface 20a and the second upper surface 20b, and a light adjusting member 30 having a first upper surface 20a and a second upper surface 20b. a first side surface 20d continuing to the first surface 15a of the light-transmitting member 20, a second side surface 20e continuing to the second upper surface 20b and the lower surface 20c, and a third side surface 20f continuing to the first upper surface 20a and the lower surface 20c, wherein a thickness T1 from the lower surface 20c to the first upper surface 20a is greater than a thickness T2 from the lower surface 20c to the second upper surface 20b, and the lower surface 20c is arranged such that the lower surface 20c faces the first surface 15a of the support substrate 15; and a light adjustment member 31 exposing the first upper surface 20a of the light-transmitting member 20 and covering the second upper surface 20b and the first side surface 20d. In a planar view, the first light-emitting region R1 includes a first upper surface 20a, the second light-emitting region R2 includes a second upper surface 20b, the area of ​​the second light-emitting region R2 is 35% or more and 95% or less of the area of ​​the light-emitting region R, the boundary between the first light-emitting region R1 and the second light-emitting region R2 has a first point P1 and a second point P2 that are tangent to the outer periphery of the light-emitting region R, and in a planar view, a straight line S1 connecting the first point P1 and the second point P2 is a straight line that crosses the light-emitting region R.

[0011] In the light emitting device 100, the first upper surface 20a of the light-transmissive member 20 serves as a light emitting surface of the first light-emitting region R1, and the upper surface of the light adjustment member 31 serves as a light emitting surface of the second light-emitting region R2, each constituting a part of the upper surface of the light emitting device 100. In the light emitting device 100, the boundary between the first light-emitting region R1 and the second light-emitting region R2 in the light emitting region R is the outer edge of the first upper surface 20a that is continuous with the first side surface 20d of the light-transmissive member 20. The light emitting device 100 has the above-mentioned configuration, and thus can make the luminance of the light emitted from the first light emitting region R1 higher than the luminance of the light emitted from the second light emitting region R2. This allows the light emitting device 100 to have a high luminance region within the light emitting surface.

[0012] The light emitting device 100 will be described as further including a wiring board 40 on which the light emitting elements 10 are arranged, as an example. The light emitting region and each component of the light emitting device 100 will be described below.

[0013] (Light emitting area) The light emitting device 100 has a light emitting region R on the upper surface, which includes a first light emitting region R1 and a second light emitting region R2 adjacent to the first light emitting region R1, as a light emitting surface of the light emitting device 100. Specifically, the light emitting device 100 has a light emitting region R on the upper surface, which is divided into two regions with different luminance by the boundary between the first light emitting region R1 and the second light emitting region R2. The luminance of the first light emitting region R1 is higher than the luminance of the second light emitting region R2. Note that the luminance of the first light emitting region R1 is higher than the luminance of the second light emitting region R2 means that the average luminance of the entire first light emitting region R1 is higher than the average luminance of the entire second light emitting region R2 when the light emitting device 100 emits light. The first light-emitting region R1 and the second light-emitting region R2 each have an area overlapping with the light-emitting element 10 and also have an area overlapping with the light-transmissive member 20 in a plan view. In a plan view, the first light-emitting region R1 includes the first upper surface 20a, and the second light-emitting region R2 includes the second upper surface 20b. In this embodiment, in a plan view, the first light-emitting region R1 overlaps with the first upper surface 20a, and the second light-emitting region R2 overlaps with the second upper surface 20b. In a plan view, a part of the first light-emitting region R1 may not overlap with the first upper surface 20a, and a part of the second light-emitting region R2 may not overlap with the second upper surface 20b. The boundary between the first light-emitting region R1 and the second light-emitting region R2 has a first point P1 and a second point P2 that are tangent to the outer periphery of the light-emitting region R, and in a planar view, a straight line S1 connecting the first point P1 and the second point P2 is a straight line that crosses the light-emitting region R. Here, the straight line that crosses the light-emitting region R is a straight line that divides the light-emitting region R into two regions, and does not include a straight line that does not overlap the light-emitting region R in a planar view, such as a straight line that overlaps the outer periphery of the light-emitting region R. Here, the boundary between the first light-emitting region R1 and the second light-emitting region R2 is a single straight line S1 connecting the first point P1 and the second point P2. That is, in the light-emitting device 100, the boundary between the first light-emitting region R1 and the second light-emitting region R2 coincides with the single straight line S1 connecting the first point P1 and the second point P2 where the boundary touches the outer periphery in a plan view. In this way, in the light emitting device 100, the light emitting region R arranged on the upper surface is divided into two regions with different luminance at a boundary that crosses the light emitting region R. In other words, in the light emitting device 100, a high luminance region (i.e., the first light emitting region R1) and a low luminance region (i.e., the second light emitting region R2) are arranged adjacent to each other in the light emitting region R, and a part of the outer edge of each region forms the outer edge of the light emitting region R. This makes it possible to provide the light emitting device 100 suitable for forming a desired light distribution suitable for low beam and high beam, respectively, and for forming a cutoff line, when the light emitting device 100 is used as a light source for an in-vehicle headlight, for example.

[0014] The area ratio of the first light-emitting region R1 to the second light-emitting region R2 in the light-emitting region R can be appropriately set according to a desired light distribution. In plan view, the area of ​​the second light-emitting region R2 is preferably 35% or more and 95% or less of the area of ​​the light-emitting region R. This allows the light-emitting device 100 to have a high-luminance region in the light-emitting surface. For example, by setting the area of ​​the second light-emitting region R2 to 35% or more and 75% or less of the area of ​​the light-emitting region R, it is possible to provide a light-emitting device having a high-luminance region near the outer edge of the light-emitting region R while suppressing a decrease in the luminance efficiency of the entire light-emitting region R. Furthermore, by setting the area of ​​the second light-emitting region R2 to 75% or more and 95% or less of the area of ​​the light-emitting region R, it is possible to increase the luminance difference between the low-luminance region and the high-luminance region in the light-emitting region R of the light-emitting device 100, and to locally arrange a high-luminance region in a part of the outer edge of the irradiation region.

[0015] The luminance difference between the first light-emitting region R1 and the second light-emitting region R2 in the light-emitting region R can be appropriately set according to a desired light distribution. Note that, as the proportion of the second light-emitting region R2 in the light-emitting region R increases, the luminance in the first light-emitting region R1 can be relatively higher than the luminance in the second light-emitting region R2. For example, in the light emitting device 100, the second light emitting region R2 has the above-mentioned area ratio to the light emitting region R, so that the luminance of the second light emitting region R2 can be 5% to 80% of the luminance of the first light emitting region R1.

[0016] For example, a light emitting device in which the area of ​​the second light emitting region R2 is 35% to 75% of the area of ​​the light emitting region R is suitable for setting the average brightness of the second light emitting region R2 to 20% to 95% of the average brightness of the first light emitting region R1. Furthermore, a light emitting device in which the area of ​​the second light emitting region R2 is 75% to 95% of the area of ​​the light emitting region R is suitable for setting the average brightness of the second light emitting region R2 to 5% to 20% of the average brightness of the first light emitting region R1.

[0017] In this way, in order to provide the light emitting device 100 with the first light emitting region R1 and the second light emitting region R2 having a luminance difference, in this embodiment, the thickness of the light transmissive member 20 located in the second light emitting region R2 in a plan view (i.e., the shortest distance from the lower surface 20c to the second upper surface 20b) is made thinner than the thickness of the light transmissive member 20 located in the first light emitting region R1 (i.e., the shortest distance from the lower surface 20c to the first upper surface 20a). Then, a light adjusting member 31 is disposed on the upper surface (i.e., the second upper surface 20b) of the light transmissive member 20 located in the second light emitting region R2 in a plan view. The light adjusting member 31 is an optical member having both reflective and translucent optical properties. By providing the light adjusting member 31 covering the second upper surface 20b, the light emitting device 100 can reflect a part of the light emitted from the second upper surface 20b, guide the light to the first light emitting region R1 side, and emit the light from the first upper surface 20a. In this manner, the light emitting device 100 can have a high luminance region in the first light emitting region R1 of the light emitting region R. Furthermore, since the light emitting region R of the light emitting device 100 has the first light emitting region R1 and the second light emitting region R2 with a luminance difference, for example, when the light emitting device 100 is used in an in-vehicle headlight, it is possible to have a high luminance region in a desired region of the irradiation region. In other words, since a desired light distribution can be obtained without using a complex optical design such as a reflector or lens, it is possible to reduce the size of the headlight and improve the design of the headlight.

[0018] (Light emitting element) The light emitting element 10 has a support substrate 15 having a first surface 15a and a second surface 15b located on the opposite side of the first surface 15a, and a light emitting portion disposed on the second surface 15b of the support substrate 15 and including a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer in that order. The light emitting element 10 may have a plurality of light emitting portions, and here, the light emitting element 10 has a first light emitting portion 11 and a second light emitting portion 12 disposed separately from each other on the second surface 15b of the support substrate 15. Specifically, the light emitting element 10 includes the support substrate 15, the first light emitting portion 11 and the second light emitting portion 12 disposed adjacent to each other on the second surface 15b of the support substrate 15, a first element electrode 16 disposed on the first light emitting portion 11, and a second element electrode 17 disposed on the second light emitting portion 12. A first light is emitted from the first light emitting portion 11 of the light emitting element 10, and a second light is emitted from the second light emitting portion 12. The support substrate 15 is made of sapphire or spinel (MgAl 2 O 4 and nitride-based semiconductor substrates such as InN, AlN, GaN, InGaN, AlGaN, InGaAlN, etc. In order to extract the light emitted from the light emitting portion through the support substrate 15, it is preferable that the support substrate 15 is made of a material having translucency.

[0019] The first light emitting section 11 and the second light emitting section 12 each include a semiconductor laminate. The semiconductor laminate of the first light emitting section 11 and the second light emitting section 12 includes first semiconductor layers 111 and 121, light emitting layers 112 and 122, and second semiconductor layers 113 and 123, which are arranged in this order on the support substrate 15. A buffer layer made of AlGaN or the like may be arranged between the support substrate 15 and the semiconductor laminate. The first light emitting section 11 and the second light emitting section 12 are arranged adjacent to each other with a gap on the second surface 15b of the support substrate 15. The first light emitting section 11 and the second light emitting section 12 each have an element electrode for supplying electric power from the outside arranged on the surface opposite to the support substrate 15. Here, the first light emitting section 11 has three element electrodes arranged as the first element electrode 16, that is, an N-side electrode 161, a P-side electrode 162, and an N-side electrode 163. Similarly, the second light-emitting section 12 has three element electrodes, an N-side electrode 171, a P-side electrode 172, and an N-side electrode 173, arranged as the second element electrode 17. In the light-emitting element 10, the first light-emitting section 11 and the second light-emitting section 12 are separated from each other and electrically independent.

[0020] The first light-emitting section 11 and the second light-emitting section 12 can be selected from those that emit light of any wavelength. For example, the first light-emitting section 11 and / or the second light-emitting section 12 that emits light of blue (for example, wavelength 430 to 500 nm) or green (for example, wavelength 500 to 570 nm) can be selected from those that emit light of any wavelength. X Al Y Ga 1-X-Y N, 0≦X, 0≦Y, X+Y≦1), GaP, etc. can be used. The first light emitting section 11 and / or the second light emitting section 12 that emits red light (for example, wavelength 610 to 700 nm) can use, as the semiconductor laminate, GaAlAs, AlInGaP, etc. in addition to the nitride-based semiconductor element. The first light emitting section 11 and the second light emitting section 12 may have the same semiconductor laminate structure or different semiconductor laminate structures. The first light emitting section 11 and the second light emitting section 12 may have the same area in a plan view or may have different areas.

[0021] The light emitting element 10 can be made to have a higher output because a larger current can be applied by connecting the first light emitting section 11 and the second light emitting section 12 in series. When the light emitting element 10 has the first light emitting section 11 and the second light emitting section 12 arranged adjacent to each other, it is preferable that the boundary between the first light emitting region R1 and the second light emitting region R2 is located between the plurality of light emitting sections 11 and 12 in a plan view. In the light emitting element 10 having a plurality of light emitting sections, the light emitting layers 112 and 122 are not arranged between the light emitting sections 11 and 12. That is, the light emitting element 10 has a non-light emitting region between the light emitting sections 11 and 12. In this case, the region directly above the non-light emitting region on the first surface 15a of the support substrate 15 may have a lower luminance than the region directly above the light emitting sections 11 and 12. For this reason, by arranging the non-light emitting region between the light emitting sections 11 and 12 between the first light emitting region R1 and the second light emitting region R2, it is possible to suppress uneven light emission in the light emitting region R.

[0022] (Translucent member) The light emitting device 100 includes a light-transmitting member 20 arranged such that a lower surface 20c faces a first surface 15a of a support substrate 15. The planar shape of the light-transmitting member 20 can be various shapes such as a circle, an ellipse, a polygon such as a square or a hexagon, etc. Among these, a rectangular shape such as a square or a rectangle is preferable. Here, as an example, the planar shape of the light-transmitting member 20 is a rectangle. The light-transmitting member 20 has a first upper surface 20a, a second upper surface 20b, a lower surface 20c, a first side surface 20d, a second side surface 20e, and a third side surface 20f. The first side surface 20d is located between the first upper surface 20a and the second upper surface 20b. The light-transmitting member 20 has a rectangular planar shape of the entire upper surface including the first upper surface 20a and the second upper surface 20b, and in a planar view, the outer edge of this rectangle overlaps with the outer edge of the light-emitting region R of the light-emitting device 100. In addition, in the light-transmitting member 20, the outer edge of the first upper surface 20a continuing to the first side surface 20d forms the boundary between the first light-emitting region R1 and the second light-emitting region R2. That is, the outer edge of the first upper surface 20a connected to the first side surface 20d has a first point P1 and a second point P2 that are in contact with the outer periphery of the light-emitting region R as the boundary between the first light-emitting region R1 and the second light-emitting region R2. Here, the first point P1 and the second point P2 are in contact with two opposing sides of the rectangle of the light-transmitting member 20. This makes it possible to arrange the first light-emitting region R1 and the second light-emitting region R2 on the left and right or above and below the irradiation region, which makes it easy to design the lens to obtain a desired light distribution when used as a light source for a headlight, for example.

[0023] The first side surface 20d and the second upper surface 20b may be planes that are connected perpendicularly to each other, or the first side surface 20d and / or the second upper surface 20b may have an inclined surface and be connected via this inclined surface. In particular, it is preferable that the first side surface 20d and / or the second upper surface 20b have an inclined surface and are connected via this inclined surface. Here, the second upper surface 20b has a curved surface portion 20b1 as an inclined surface between the first side surface 20d. This makes it easier to propagate light on the second light-emitting region R2 side to the first light-emitting region R1 side, making it easier to increase the brightness of the first light-emitting region R1. The curved surface portion 20b1 is formed in a concave shape that is recessed toward the translucent member 20 side. The radius of curvature of the curved surface portion 20b1 is, for example, 5 μm or more and 35 μm or less. The boundary between the second upper surface 20b and the first side surface 20d is a position where the first side surface 20d contacts the curved surface portion 20b1 (broken line B1 in FIG. 1D). However, the boundary between the second upper surface 20b and the first side surface 20d does not have to be clear. The first side surface 20d and the third side surface 20f, which are continuous with the first upper surface 20a, preferably have a plane that is continuous perpendicularly with the first upper surface 20a. This makes it possible to clearly show the difference in luminance between the light-emitting region R on the upper surface of the light-emitting device 100 and the region surrounding the light-emitting region R.

[0024] The light-transmissive member 20 may further have protrusions 23, 24 on the second side surface 20e and the third side surface 20f, each of which has a shape that protrudes partially to the side. The protrusions 23, 24 are formed when the light-transmissive member 20 is divided into individual pieces in the manufacturing process, as described later. The protrusions 23, 24 are disposed on the second side surface 20e and the third side surface 20f of the light-transmissive member 20 along the outer periphery of the lower surface 20c of the light-transmissive member 20. In the light-emitting device 100, the light-transmissive member 20 has the protrusions 23, 24, which can improve the adhesion between the second side surface 20e and the third side surface 20f of the light-transmissive member 20 and the light adjustment member 32.

[0025] In the light-transmitting member 20, a thickness T1 from the lower surface 20c to the first upper surface 20a is greater than a thickness T2 from the lower surface 20c to the second upper surface 20b. As a result, when the light-transmitting member 20 contains a filler such as a light diffusing member, multiple reflection of light guided from the second light-emitting region R2 side to the first light-emitting region R1 side is suppressed, and the light extraction efficiency from the light-emitting region R is improved.

[0026] The thickness T1 from the lower surface 20c to the first upper surface 20a of the light-transmitting member 20 is preferably 50 μm or more from the viewpoint of improving mechanical strength, and is preferably 300 μm or less from the viewpoint of miniaturizing the light-emitting device 100. More specifically, the thickness T1 from the lower surface 20c to the first upper surface 20a is more preferably 55 μm or more and 200 μm or less, and further preferably 60 μm or more and 100 μm or less.

[0027] The thickness T2 from the lower surface 20c to the second upper surface 20b is preferably 30 μm or more and 280 μm or less, from the viewpoint of improving mechanical strength and reducing size, similar to the thickness T1, and taking into consideration the difference from the thickness T1. The difference between the thickness T1 from the lower surface 20c to the first upper surface 20a and the thickness T2 from the lower surface 20c to the second upper surface 20b can be appropriately adjusted according to a desired light distribution. For example, when the luminance of the second light-emitting region R2 is set to 5% to 80% of the luminance of the first light-emitting region R1, the thickness T2 of the light-transmitting member 20 at the second upper surface 20b can be set to 20% to 90% of the thickness T1 at the first upper surface 20a.

[0028] In addition, when the second upper surface 20b of the light-transmitting member 20 has the curved surface portion 20b1, the thickness T3 from the lower surface 20c to the lower end of the first side surface 20d (i.e., the boundary between the second upper surface 20b and the first side surface 20d) is preferably 90% or less of the thickness T1, thereby making it possible to clearly define the boundary between the first light-emitting region R1 and the second light-emitting region R2.

[0029] The second upper surface 20b preferably has an uneven structure on its surface. This can improve the adhesion between the second upper surface 20b and the light adjustment member 31. Specifically, the surface roughness Ra of the second upper surface 20b is preferably larger than the surface roughness Ra of the first upper surface 20a. This can improve the adhesion between the second upper surface 20b of the light-transmitting member 20 and the light adjustment member 31, and can suppress the light adjustment member 31 from creeping up to the first upper surface 20a. The surface roughness Ra of the second upper surface 20b can be, for example, 0.3 μm or more and 10 μm or less. If the surface roughness Ra of the second upper surface 20b is 0.3 μm or more, the adhesion between the light-transmitting member 20 and the light adjustment member 31 is further improved. On the other hand, if the surface roughness Ra of the second upper surface 20b is 10 μm or less, the light is reflected at the interface between the light-transmitting member 20 and the light adjustment member 31, making it easier to guide the light to the first upper surface 20a side.

[0030] As an example, the light-transmitting member 20 is a wavelength conversion member containing a phosphor that converts the wavelength of the first light emitted from the first light-emitting section 11 and the second light emitted from the second light-emitting section 12 into a third light. The emission peak wavelength of the first light and the second light is, for example, 420 nm or more and 460 nm or less. The emission peak wavelength of the third light is, for example, 500 nm or more and 600 nm or less. The phosphor concentration of the light-transmitting member 20 is preferably, for example, 60 mass % or more and 70 mass % or less. The phosphor concentration indicates the ratio of the phosphor in the light-transmitting member 20 that contains the phosphor. Since the second upper surface 20b and the first side surface 20d of the light-transmitting member 20 are covered with the light adjusting member 31, the light reflected by the light adjusting member 31 propagates through the light-transmitting member 20 and excites the phosphor again. Therefore, in this embodiment, in consideration of the fact that the phosphor is repeatedly excited by the light reflected by the light adjusting member 31, the thickness T2 from the lower surface 20c to the second upper surface 20b is made smaller than the thickness T1 from the lower surface 20c to the first upper surface 20a. In other words, the amount of phosphor disposed between the lower surface 20c and the second upper surface 20b is made smaller than the amount of phosphor disposed between the lower surface 20c and the first upper surface 20a. This makes it possible to suppress the chromaticity difference between the light emitted from the first light-emitting region R1 side and the light emitted from the second light-emitting region R2 side, and thus makes it possible to suppress the chromaticity unevenness between the first light-emitting region R1 and the second light-emitting region R2 in the light-emitting region R of the light-emitting device 100.

[0031] For example, a light-transmitting resin, glass, ceramics, etc. can be used as the light-transmitting member 20. For example, a resin containing one or more of a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylic resin, a phenolic resin, and a polyimide resin can be used as the light-transmitting resin. The light-transmitting member 20 may contain a phosphor capable of converting the wavelength of at least a part of the incident light. Examples of light-transmitting members containing a phosphor include a sintered body of a phosphor, and a light-transmitting resin, glass, ceramics, or the like containing a phosphor powder. The light-transmitting member 20 may also be a member in which a phosphor-containing layer, such as a resin layer containing a phosphor, is disposed on the surface of a light-transmitting layer that is a molded body of a light-transmitting resin, glass, ceramics, or the like.

[0032] As the phosphor, one that can be excited by the first light and the second light emitted from the first light emitter 11 and the second light emitter 12 is used. For example, yttrium-aluminum-garnet phosphors (e.g., Y 3 (Al,Ga) 5 O 12 :Ce), lutetium aluminum garnet phosphors (e.g. Lu 3 (Al,Ga)5 O 12 :Ce), terbium-aluminum-garnet-based phosphors (e.g., Tb 3 (Al,Ga) 5 O 12 :Ce), silicate-based phosphors (e.g., (Ba,Sr) 2 SiO 4 :Eu), chlorosilicate-based phosphors (e.g., Ca 8 Mg(SiO 4 ) 4 C l2 :Eu), β-sialon-based phosphors (e.g., Si 6-z Al z O z N 8-z :Eu(0 < z < 4.2)), SGS-based phosphors (e.g., SrGa 2 S 4 :Eu), etc. can be mentioned. As phosphors that emit yellow light, α-sialon-based phosphors (e.g., Mz(Si,Al) 12 (O,N) 16 (however, 0 < z ≤ 2, and M is Li, Mg, Ca, Y, and lanthanide elements excluding Ce) etc. can be mentioned. In addition, among the above green-emitting phosphors, there are also yellow-emitting phosphors. Also, for example, yttrium-aluminum-garnet-based phosphors can shift the emission peak wavelength to the longer wavelength side by substituting a part of Y with Gd, and can emit yellow light. Also, among these, there are fluorescent substances that can emit orange light. As phosphors that emit red light, nitrogen-containing calcium aluminosilicate (CASN or SCASN)-based phosphors (e.g., (Sr,Ca)AlSiN 3 :Eu), BSESN-based phosphors (e.g., (Ba,Sr,Ca) 2 Si 5 N 8 :Eu), etc. can be mentioned. In addition, manganese-activated fluoride-based phosphors (general formula (I) A 2 [M 1-a Mn a F 6 represented phosphors (however, in the above general formula (I), A is K, Li, Na, Rb, Cs, and NH 4At least one selected from the group consisting of, M is at least one element selected from the group consisting of Group 4 elements and Group 14 elements, and a satisfies 0 < a < 0.2). Examples of this manganese-activated fluoride-based phosphor include KSF-based phosphors (e.g., K 2 SiF 6 :Mn), KSAF-based phosphors (e.g., K 2 Si 0.99 Al 0.01 F 5.99 :Mn) and MGF-based phosphors (e.g., 3.5MgO·0.5MgF 2 ·GeO 2 :Mn), etc.

[0033] For example, as a yellow-emitting phosphor that can emit white mixed-color light in combination with a blue light-emitting element, a yttrium-aluminum-garnet-based phosphor in which a part of Y is substituted with Gd (e.g., (Y,Gd) 3 Al 5 O 12 :Ce) can be preferably used. And when the light-emitting device 100 can emit white light, the type and concentration of the phosphor contained in the light-transmitting member 20 are adjusted so that white light of a desired chromaticity rank can be emitted.

[0034] (Light adjustment member) The light adjustment member 30 covers the second upper surface 20b of the light-transmitting member 20. The light adjustment member 30 is an optical member having both light-shielding and light-transmitting optical characteristics. It may have light-absorbing property as the light-shielding property, but preferably has light-reflecting property. The light adjustment member 30 may have both light-reflecting and light-transmitting optical characteristics for all wavelengths of light emitted from the second upper surface 20b, or may have optical characteristics of shielding (preferably reflecting) light of a specific wavelength and transmitting light of other wavelengths. The light emitting device 100 includes the light adjusting member 31 that covers the second upper surface 20b and the first side surface 20d of the light-transmitting member 20, and thereby can reflect a part of the light emitted from the second upper surface 20b and emit the light from the first light-emitting region R1 side. This can increase the luminance of the first light-emitting region R1 relative to the luminance of the second light-emitting region R2.

[0035] The light emitting device 100 may include, as the light adjustment member 30, a light adjustment member 31 that covers the second upper surface 20b and the first side surface 20d of the light-transmitting member 20, and a light adjustment member 32 that covers the second side surface 20e and the third side surface 20f of the light-transmitting member 20 and the side surface of the light emitting element 10. When the light emitting element 10 is disposed on the wiring board 40, the light adjustment member 32 may cover the upper surface of the wiring board 40. Here, the light adjustment member 31 and the light adjustment member 32 are integrally formed of the same material. The boundary between the light adjustment member 31 and the light adjustment member 32 is, for example, a plane (dashed line B2 shown in FIG. 1D) that is perpendicular to the second upper surface 20b and that is along the boundary between the second upper surface 20b and the second side surface 20e. The light adjustment member 31 and the light adjustment member 32 may be separate first light adjustment member 31 and second light adjustment member 32. The separate first light adjustment member 31 and second light adjustment member 32 may be made of the same material or different materials.

[0036] The light adjusting member 30 is preferably made of an insulating material. For example, a thermosetting resin, a thermoplastic resin, or the like can be used as the light adjusting member 30. Specifically, the light adjusting member 30 is made of a resin containing particles of a light reflecting material. Examples of the resin include a resin or hybrid resin containing one or more of silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylic resin, phenol resin, bismaleimide triazine resin, and polyphthalamide resin. Among them, a resin containing a silicone resin as a base polymer, which has excellent heat resistance, electrical insulation, and flexibility, is preferable. Examples of the light reflecting material include titanium oxide, silicon oxide, zirconium oxide, magnesium oxide, calcium carbonate, calcium hydroxide, calcium silicate, zinc oxide, barium titanate, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, mullite, and combinations thereof. Among them, titanium oxide is preferable because it is relatively stable against moisture and has a high refractive index.

[0037] The concentration of the light reflective material in the light adjusting member 30 is preferably, for example, 60% by mass to 70% by mass. The concentration of the light reflective material indicates the ratio of the light reflective material in the light adjusting member 30 that contains the light reflective material. The reflectance of the light adjustment member 30 is preferably, for example, 1% or more and 95% or less. The reflectance means the reflectance at the emission peak wavelength of the light emitted from the light emitting element 10. When the emission peak wavelengths of the first light and the second light emitted from the first light emitting section 11 and the second light emitting section 12 are different, the reflectance means the reflectance at the emission peak wavelength of the shorter wavelength.

[0038] The total light transmittance of the light adjusting member 30 is preferably, for example, 1% or more and 35% or less. The total light transmittance is the ratio of the amount of light that passes through a target object to the amount of light that enters the target object. For example, the total light transmittance refers to the total light transmittance measured in accordance with the Japanese Industrial Standard JIS K 7375:2008.

[0039] As described above, the light adjustment member 30 is, for example, a resin containing a light reflecting material. By using a resin containing a light reflecting material as the light adjustment member 30 in this manner, the light adjustment member 30 is easy to handle, and the light adjustment member 30 can be easily disposed on the second upper surface 20b.

[0040] The light adjusting member 31 may contain a phosphor. The phosphor contained in the light adjusting member may be the same phosphor as the phosphor contained in the light-transmitting member 20, or may be a different phosphor. For example, the phosphor contained in the light adjusting member 31 may contain a phosphor having a different emission peak wavelength from the phosphor contained in the light-transmitting member 20. This makes it possible to correct the chromaticity of the light emitted from the second light-emitting region R2. The phosphor contained in the light adjusting member 31, for example, converts the wavelength of the first light and the second light into a fourth light having a different emission peak wavelength from the first light and the second light. The emission peak wavelength of the fourth light is, for example, 470 nm or more and 660 nm or less. The phosphor concentration of the light adjusting member 31 is preferably smaller than the concentration of the light-reflecting material in the light adjusting member, and is, for example, preferably 5 mass % or more and 30 mass % or less. The phosphor concentration indicates the ratio of the phosphor in the light adjusting member 31 containing the phosphor.

[0041] In the light-emitting region R, the first light-emitting region R1 (i.e., the first upper surface 20a of the light-transmitting member 20) and the second light-emitting region R2 (i.e., the upper surface of the light adjustment member 31) are preferably located on the same plane. This makes it easier to adjust the focal position of an optical system such as a reflector or a lens when the light-emitting device 100 is used in an in-vehicle headlight, for example. The thickness of the light adjusting member 31 may be appropriately adjusted based on the thicknesses T1, T2, T3, etc. of the light-transmitting member 20. Although the light adjusting member 31 has been described as being disposed together with the light adjusting member 32, it may be disposed alone without providing the light adjusting member 32.

[0042] (wiring board) In the light emitting device 100 , the light emitting element 10 can be disposed on a wiring substrate 40 . The wiring board 40 includes a base material 41 and wiring 42 disposed on at least the upper surface of the base material 41, for supplying power to the first element electrode 16 and the second element electrode 17 of the light emitting element 10 via a conductive member 50. The first element electrode 16 and the second element electrode 17 are disposed on the wiring 42 via the conductive member 50. The conductive member 50 may be made of a metal material made of a conductive metal, such as Cu, Au, or an alloy of each of these. The light emitting element 10 and the wiring 42 may be directly bonded to each other without the conductive member 50 being interposed therebetween.

[0043] The wiring board 40 includes wiring 42 that connects the first light-emitting portion 11 and the second light-emitting portion 12 in series. The wiring 42 includes, for example, a first wiring 421, a second wiring 422, and a third wiring 423. The first element electrode 16 (specifically, the P-side electrode 162) is arranged on the first wiring 421, the second element electrode 17 (specifically, the N-side electrode 171 and the N-side electrode 173) is arranged on the second wiring 422, and the first element electrode 16 (specifically, the N-side electrode 161 and the N-side electrode 163) and the second element electrode 17 (specifically, the P-side electrode 172) are arranged on the third wiring 423. In addition, electronic components 441 are arranged on the first wiring 421 and the second wiring 422. Such wiring 42 allows current to be supplied to the first light-emitting section 11 and the second light-emitting section 12 by one circuit, so that the wiring board 40 can be made smaller. This allows the light-emitting device 100 to be made smaller. In the wiring 42, the third wiring 423 is arranged between the first wiring 421 and the second wiring 422. The wiring 42 may include, for example, wiring for individually driving the first light-emitting unit 11 and the second light-emitting unit 12. In this case, the wiring board 40 can individually control the magnitude of the current supplied to the first light-emitting unit 11 and the second light-emitting unit 12.

[0044] The substrate 41 may be made of a material known in the art as a substrate for forming a wiring board for supporting electronic components such as light-emitting elements. Examples of the substrate 41 include insulating materials such as glass epoxy, resin, and ceramics, semiconductor materials such as silicon, and conductive materials such as copper. Among them, ceramics having high heat resistance and light resistance are preferably used. Examples of ceramics include aluminum oxide, aluminum nitride, silicon nitride, and LTCC. Composite materials of these insulating materials, semiconductor materials, and conductive materials may also be used. When a semiconductor material or conductive material is used as the substrate 41, the wiring 42 may be disposed on the upper surface of the substrate 41 via an insulating layer. Examples of materials for the wiring 42 include metals such as Fe, Cu, Ni, Al, Ag, Au, Pt, Ti, W, and Pd, and alloys containing at least one of these metals.

[0045] [Light emitting device operation] When the light emitting device 100 is driven, a current is supplied from an external power source to the light emitting element 10, and the light emitting element 10 emits light. At least a part of the first light and the second light emitted from the light emitting element 10 is wavelength-converted to a third light by the phosphor contained in the light-transmitting member 20. The third light is mixed with the first light and the second light that have not been wavelength-converted to the third light. The mixed light is irradiated to the outside as, for example, white light. At this time, as described above, since the light adjustment member 31 is arranged on the second upper surface 20b of the light-transmitting member 20, a part of the light emitted from the second upper surface 20b is reflected by the light adjustment member 31, propagates through the light-transmitting member 20, and is emitted from the first light-emitting region R1 side. As a result, the luminance of the second light-emitting region R2 is reduced, and the luminance of the first light-emitting region R1 is relatively increased. In this way, the light emitting device 100 can have a high luminance region in the irradiation region of the light emitted from the light-emitting region R. In the light-transmitting member 20, a thickness T2 from the lower surface 20c to the second upper surface 20b is smaller than a thickness T1 from the lower surface 20c to the first upper surface 20a. This reduces repeated excitation of the phosphor in the light-transmitting member 20 by the light reflected by the light adjustment member 31. In this way, it is possible to adjust the chromaticity of the light emitted from the first light-emitting region R1 side and the light emitted from the second light-emitting region R2 side.

[0046] Here, the formation of the luminance difference by the light adjustment member 31 will be specifically described below with reference to Fig. 2. Also, here, Fig. 1D will be referred to as appropriate. Note that Fig. 2 shows only a part of the optical path in a schematic manner to simplify the description. The traveling direction of the actual light changes as appropriate between and within each member due to refraction, scattering, etc., but for simplification, illustration may be omitted.

[0047] Most of the first light L1 emitted from the first light-emitting unit 11 is emitted from the first upper surface 20a of the light-transmitting member 20. On the other hand, most of the second light L2 emitted from the second light-emitting unit 12 heads toward the second upper surface 20b of the light-transmitting member 20, but a part of the second light L2 is reflected by the light adjustment member 31 and heads toward the support substrate 15, and is reflected by the support substrate 15, for example, and is emitted from the first upper surface 20a of the light-transmitting member 20. The other part of the second light L2 passes through the light adjustment member 31 and is emitted from the upper surface of the light adjustment member 31. As a result, the amount of light emitted from the first light-emitting region R1 increases, and the amount of light emitted from the second light-emitting region R2 decreases. Therefore, the luminance of the first light-emitting region R1 increases, and the luminance of the second light-emitting region R2 decreases relatively. In addition, in the light-transmitting member 20 containing the phosphor, the thickness T2 from the lower surface 20c to the second upper surface 20b is thinner than the thickness T1 from the lower surface 20c to the first upper surface 20a. Therefore, the amount of phosphor contained in the light-transmitting member 20 in the region overlapping with the second light-emitting region R2 in a planar view is smaller than that in the region overlapping with the first light-emitting region R1 in a planar view. That is, the light emitted from the second upper surface 20b has a smaller proportion of wavelength-converted light than the light emitted from the first upper surface 20a, and a difference in chromaticity occurs between the light emitted from the second upper surface 20b and the light emitted from the first upper surface 20a. However, since the light emitted from the second light-emitting region R2 has a larger proportion of wavelength-converted light, the difference in chromaticity between the light emitted from the first light-emitting unit 11 and the light emitted from the second light-emitting unit 12 can be reduced. This makes it possible to adjust, for example, the chromaticity of white light with different luminance emitted from the light emitting device 100 to be approximately the same. In this way, by adjusting the height difference between the first upper surface 20a and the second upper surface 20b and the phosphor concentration of the light-transmitting member 20, the light-emitting device 100 has, within the light-emitting region R, a first light-emitting region R1 which is a region with relatively high brightness and a second light-emitting region R2 which is a region with relatively low brightness, and the light emission chromaticity of both can be adjusted to a desired chromaticity.

[0048] [Manufacturing method of light emitting device] Fig. 3 is a flowchart of the method for manufacturing the light emitting device according to the first embodiment. Figs. 4A, 4C, and 4E are plan views typically showing the method for manufacturing the light emitting device according to the first embodiment. Figs. 4B, 4D, and 4F to 4J are cross-sectional views typically showing the method for manufacturing the light emitting device according to the first embodiment.

[0049] A method for manufacturing the light emitting device 100 includes preparing a light emitting element 10 having a support substrate 15 having a first surface 15a and a second surface 15b located opposite to the first surface 15a, and light emitting portions 11 and 12 arranged on the second surface 15b of the support substrate 15 and including a semiconductor laminate having first semiconductor layers 111 and 121, light emitting layers 112 and 122, and second semiconductor layers 113 and 123 in that order; The method includes preparing a member 200, bonding a first surface 15a of a support substrate 15 and a second surface of a light-transmitting member 20, processing the first surface of the light-transmitting member 200 to have a first upper surface 20a and a second upper surface 20b having a thickness from the second surface that is thinner than a thickness from the second upper surface 20b to the first upper surface 20a, and arranging a light adjustment member 31 on the first surface side of the light-transmitting member 20 to expose the first upper surface 20a and cover the second upper surface 20b.

[0050] In addition, the manufacturing method of the light-emitting device 100 may include, after processing the first surface of the light-transmissive member 200, arranging the light-emitting element 10 to which the light-transmissive member 20 is bonded on the wiring substrate 40 before arranging the light adjustment member 31.

[0051] The manufacturing method of the light emitting device 100 is described as including a step S11 of preparing a light emitting element, a step S12 of joining a light-transmitting member, a step S13 of processing the light-transmitting member, a step S14 of singulating, a step S15 of arranging the light emitting element, and a step S16 of arranging a light adjustment member. The materials and arrangement of each member are the same as those described in the description of the light-emitting device 100, and therefore will not be described here as appropriate. The number of light-emitting elements and the size of the light-transmitting member are not limited to those shown in the drawings for ease of description. FIG. 1D will also be referred to as appropriate.

[0052] (Process for preparing light-emitting element) In the step S11 of preparing a light emitting element, a light emitting element 10 having a supporting substrate 15, a first light emitting section 11, a second light emitting section 12, a first element electrode 16 and a second element electrode 17 is prepared. In step S11 of preparing the light emitting elements, a semiconductor wafer 101 is prepared, on which a plurality of regions that will become individual light emitting portions after singulation are arranged on a support substrate 15. In the step S11 of preparing the light-emitting elements, the light-emitting elements 10 to be prepared may be prepared as a semiconductor wafer that will become individual light-emitting elements 10 after singulation, or may be prepared as singulated light-emitting elements 10. In the following steps, the light-emitting elements 10 will be described as being prepared as a semiconductor wafer 101. When preparing a semiconductor wafer 101 as the step S11 of preparing light-emitting elements, the step S11 of preparing light-emitting elements preferably includes a step of forming cracks 151 by a laser at the planned division locations for individualization. When preparing individual light-emitting elements 10 as the step S11 of preparing a light-emitting element, the step S11 of preparing a light-emitting element may include a singulation step of dividing the semiconductor wafer 101 into individual light-emitting elements 10. The singulation can be performed by a known method such as blade dicing or laser dicing. The light emitting device 10 can be prepared by going through a part or all of a manufacturing process, such as a process of semiconductor growth, etc. Alternatively, the light emitting device 10 may be prepared by purchasing, etc.

[0053] (Step of joining light-transmitting members) In the step S12 of bonding a light-transmitting member, a light-transmitting member 200 is bonded to the first surface 15a of the support substrate 15, as shown in FIGS. 4A and 4B. In step S12 of bonding the light-transmissive members, first, a light-transmissive member 200 having a first surface 200a and a second surface 200b located on the opposite side of the first surface 200a is prepared. The light-transmissive member 200 is a plate-like light-transmissive member having a plurality of regions that will become individual light-transmissive members 20 after singulation. Next, the first surface 15a of the support substrate 15 and the second surface 200b of the light-transmissive member 200 are bonded to each other. The light-transmitting member 200 can be bonded to the supporting substrate 15 by a direct bonding method such as pressure bonding, surface activated bonding, atomic diffusion bonding, hydroxyl group bonding, etc. The light-transmitting member 200 may be bonded to the supporting substrate 15 using a known adhesive member.

[0054] (Process for processing light-transmitting member) As shown in FIGS. 4C to 4F, in step S13 of processing the light-transmitting member, the light-transmitting member 200 is processed so that, after being singulated, the light-transmitting member 20 has a first upper surface 20a, a second upper surface 20b, a lower surface 20c located opposite the first upper surface 20a and the second upper surface 20b, a first side surface 20d continuing with the first upper surface 20a and the second upper surface 20b, a second side surface 20e continuing with the second upper surface 20b and the lower surface 20c, and a third side surface 20f continuing with the first upper surface 20a and the lower surface 20c, and the thickness T1 from the lower surface 20c to the first upper surface 20a is greater than the thickness T2 from the lower surface 20c to the second upper surface 20b.

[0055] In the process S13 of processing the light-transmitting member, a part of the light-transmitting member 200 on the first surface 200a side of the light-transmitting member 200 is removed by a blade 61 along a predetermined removal line 611 as shown in FIG. 4C to FIG. 4F, to form a first groove 612. The predetermined removal line 611 is preferably located at a position overlapping with a crack 151 along which the light-emitting element 10 is separated. The first groove 612 may reach the support substrate 15, but preferably does not reach the support substrate 15 in order to prevent unintended chipping or cracking of the support substrate 15. The first groove 612 is formed here using a blade 61 having a blade thickness equivalent to the desired width of the first groove 612 (i.e., the width of the predetermined removal line 611). In addition, in the region where the second upper surface 20b is to be disposed, a part of the light-transmitting member 200 on the first surface 200a side is removed by a blade 62 along a predetermined removal line 621 as shown in FIG. 4C to FIG. 4F. This forms a second groove 622. The second groove 622 is formed by repeating the removal process several times (four times in this example) while shifting the entry position of the blade 62 using a blade 62 having a blade thickness thinner than the desired width of the second groove 622 (i.e., the width of the predetermined removal line 621), thereby forming the second groove 622 along the predetermined removal line 621. In this manner, as shown in FIG. 4F, the light-transmitting member 210 processed into a desired shape is formed on the support substrate 15. In FIG. 4D, the blade 61 forming the first groove 612 and the blade 62 moving several times while shifting the entry position to form the second groove 622 are all shown by solid lines. In FIG. 4E, for convenience, the first groove 612 is illustrated as being extended from the outer edge of the circular light-transmitting member. In this specification, the width of the groove means the maximum value of the length of the groove in a direction perpendicular to the direction in which the length of the groove is maximum in a plan view.

[0056] (Single process) In the singulation step S14, the light-transmitting member 210 and the support substrate 15 are singulated as shown in FIG. 4G. In the singulation step S14, the light-transmitting member 210 is split at the first groove 612. Since the first groove 612 is located at a position overlapping the crack 151, the support substrate 15 is also split along the crack 151 during the splitting. The split light-transmitting member 20 has the protruding portions 23 and 24, which are shaped to partially protrude to the side, as the second side surface 20e and the third side surface 20f. The protruding portions 23 and 24 are regions located below the first groove 612 formed in the processing step. In this manner, the light-emitting element 10 in which the individual light-transmitting members 20 are arranged is obtained. By providing the protruding portions 23 and 24 formed by splitting the light-transmitting member 20, and by splitting the support substrate 15 along the crack 151 at the same time as the splitting of the light-transmitting member 210, it becomes easy to make the lower surface 20c of the light-transmitting member 20 have the same area as the first surface 15a of the support substrate 15. In addition, the outer edges of the lower surface 20c of the light-transmitting member 20 and the first surface 15a of the support substrate 15 overlap in a plan view. This makes it easier to guide light from the light-emitting element 10 to the light-transmitting member 20, and improves the light extraction efficiency of the light emitting device 100.

[0057] (Step of arranging light-emitting elements) In the step S15 of arranging the light emitting element, the light emitting element 10 to which the light-transmitting member 20 is joined is arranged on the wiring board 40, as shown in FIGS. 4H and 4I. In step S15 of arranging the light-emitting element, for example, the first upper surface 20a of the light-transmitting member 20 is sucked by the suction portion 72 of the collet 70, and the light-emitting element 10 to which the light-transmitting member 20 is joined is moved to a predetermined position on the wiring board 40. The collet 70 preferably has a flexible adjustment portion 71 in a portion that contacts the second upper surface 20b. This makes it possible to stably hold the light-transmitting member 20 with the processed upper surface. Then, the light-emitting element 10 having the translucent member 20 joined to the wiring board 40 via the conductive member 50 is placed, and the collet 70 is pressed in the direction toward the wiring board 40 as shown by the arrow in Figure 4I, thereby joining the first element electrode 16 and the second element electrode 17 to the wiring 42.

[0058] (Step of placing light adjustment member) 4J, the process S16 of arranging the light adjusting member exposes the first upper surface 20a of the light-transmitting member 20 and arranges a light adjusting member 31 that covers the second upper surface 20b. Here, a light adjusting member 32 is further arranged so as to cover the side surface of the light-transmitting member 20, the side surface of the light-emitting element 10, and the upper surface of the wiring board 40. In the step S16 of arranging the light adjusting member, the uncured resin constituting the light adjusting member 30 is arranged on the wiring board 40 so as to expose the first upper surface 20a of the light-transmitting member 20 and cover the second upper surface 20b and the side surface. The resin can be arranged by, for example, potting. The resin can also be arranged by compression molding, transfer molding, or the like. The resin is then cured to form the light adjusting member 30. The light adjusting member 30 may be formed by previously arranging a frame that holds the resin at a desired position on the wiring board 40 and supplying the resin into the frame. If necessary, the upper surface of the formed light adjusting member 30 may be cut to adjust the height or to process the upper surface of the light adjusting member 30 to be flat.

[0059] In the method for manufacturing the light emitting device 100, a plurality of light emitting devices 100 may be manufactured simultaneously or individually using one wiring board having a plurality of continuous regions that become the wiring boards 40 of the individual light emitting devices 100 after singulation. When a plurality of light emitting devices 100 are manufactured simultaneously, after step S16 of arranging the light adjustment member, the light emitting devices 100 are singulated to form the light emitting devices 100.

[0060] Next, other embodiments will be described. Here, FIG. 1D will be referred to as appropriate, and the description of the configuration already described will be omitted as appropriate. In addition, the light emitting device according to the other embodiments described below can also be a light emitting device having a high brightness region in the light emitting surface.

[0061] Second to fifth embodiments 5A to 5D are cross-sectional views that diagrammatically show light emitting devices according to second to fifth embodiments, respectively.

[0062] The light emitting devices 100A to 100D are different in configuration from the light emitting device 100 of the first embodiment in that a light-transmitting plate 80 that covers the upper surface of the light adjustment member 31 is provided. 5A, in the light emitting device 100A, a light-transmitting plate 80 is disposed at a position facing the second upper surface 20b of the light-transmitting member 20. The light-transmitting plate 80 is disposed on the light adjustment member 31 and spaced apart from the first side surface 20d. The light-transmitting plate 80 is disposed such that the upper surface of the light-transmitting plate 80 and the first upper surface 20a of the light-transmitting member 20 are positioned on the same plane. The light emitting device 100A can protect the light adjustment member 31 by including the light-transmitting plate 80. In particular, when the light adjustment member 31 contains resin, deterioration of the resin can be suppressed and the light emitting surface can be protected. This allows the light emitting device 100A to have a luminance difference within the light emitting region and improve the reliability of the light emitting device.

[0063] The light emitting device 100B differs from the light emitting device 100A in that a light-transmitting plate 80 is disposed at a position facing the second upper surface 20b of the light-transmitting member 20 up to a position contacting the first side surface 20d. The light emitting device 100B also provides the same effects as the light emitting device 100A.

[0064] The light emitting device 100C differs from the light emitting device 100B in that a light-transmitting plate 80 is disposed at a position facing the first upper surface 20a and the second upper surface 20b of the light-transmitting member 20. In the light emitting device 100C, the light adjusting member 31 and the light-transmitting member 20 can be protected, deterioration of the light adjusting member 31 and the light-transmitting member 20 can be suppressed, and the light emitting surface can be protected more widely.

[0065] The light emitting device 100D is different from the light emitting device 100C in that the light transmissive plate 80 is arranged so that the side surface thereof is exposed from the light adjustment member 31. The light emitting device 100D can be easily manufactured because the light transmissive plate 80 can be arranged after the light adjustment member 30 is arranged.

[0066] The light-transmitting plate 80 used in the light-emitting devices 100A to 100D may be a plate made of a light-transmitting material such as resin, glass, or inorganic material. As the glass, for example, borosilicate glass, quartz glass, or the like may be used, and as the resin, for example, silicone resin, epoxy resin, or the like may be used. In particular, it is preferable to use glass for the light-transmitting plate 80 in consideration of its resistance to deterioration by light and its mechanical strength. The light-transmitting plate 80 may contain a light-diffusing member. By containing a light-diffusing member in the light-transmitting plate 80, it is possible to suppress unevenness in chromaticity and luminance. As the light-diffusing member, for example, titanium oxide, barium titanate, aluminum oxide, silicon oxide, or the like may be used. Furthermore, the light emitting devices 100A to 100D each include a light-transmitting plate 80 in at least the second light emitting region R2. This makes it easy to recognize the position of the light emitting region R including the second light emitting region R2 when the light emitting device is not emitting light. This makes it easy to align the light emitting region R with the optical system.

[0067] The thickness of the light-transmitting plate 80 used in the light-emitting devices 100A to 100D is preferably, for example, 30 μm or more and 230 μm or less. If the thickness of the light-transmitting plate 80 is 30 μm or more, the light adjustment member 31 can be more easily protected. On the other hand, if the thickness of the light-transmitting plate 80 is 230 μm or less, the thickness of the light adjustment member 31 can be ensured and the light-emitting device can be easily miniaturized. The thickness of the light-transmitting plate 80 is the thickness in a direction perpendicular to the upper surface of the wiring board 40 or the first surface 15a of the support board 15.

[0068] The light emitting device 100A and the light emitting device 100B can be manufactured, for example, by disposing uncured resin when disposing the light adjustment member 30, disposing the light-transmitting plate 80 at a predetermined position, and then curing the resin. Alternatively, after the resin is cured, a predetermined portion of the upper surface of the light adjustment member 31 may be cut, and the light-transmitting plate 80 may be disposed via a known adhesive member or the like. The light emitting devices 100C and 100D can be manufactured, for example, by arranging the light adjusting member 30, and then arranging the light-transmitting plate 80 on the upper surface of the light adjusting member 31 and the first upper surface 20a of the light-transmitting member 20 via a light-transmitting adhesive member or the like. Alternatively, the light adjusting member 30 and the light-transmitting member 20 may be formed of resin, and bonded to the light-transmitting plate 80 by using the tackiness of the resin.

[0069] Sixth Embodiment FIG. 6 is a cross-sectional view illustrating a schematic configuration of a light emitting device according to the sixth embodiment.

[0070] The light emitting device 100E differs from the light emitting device 100 of the first embodiment in that the light adjustment member 31A is an inorganic member containing a light reflective material. The light emitting device 100E includes a light adjusting member 30A including a first light adjusting member 31A covering the second upper surface 20b and the first side surface 20d of the translucent member 20, and a second light adjusting member 32 exposing the upper surface of the first light adjusting member 31A and the first upper surface 20a of the translucent member 20 and covering the side surface of the first light adjusting member 31A, the second side surface 20e and the third side surface 20f of the translucent member 20, and the side surface of the light emitting element 10. For example, the first light adjusting member 31A is an inorganic member, and the second light adjusting member 32 is a resin. Examples of the inorganic member include glass and ceramics. The light emitting device 100E is more reliable because the first light adjustment member 31A is an inorganic member. In addition, the boundary between the first light adjustment member 31A and the second light adjustment member 32 of the light emitting device 100E is easily visible, so that the position of the light emitting region R including the second light emitting region R2 can be easily recognized when the light emitting device is not emitting light. This makes it easy to align with the optical system.

[0071] The light emitting device 100E can be manufactured, for example, by processing the translucent member 200 bonded to the support substrate 15, arranging the first light adjustment member 31A, and then individualizing the light emitting element 10 to which the translucent member 20 is bonded.

[0072] Seventh embodiment FIG. 7 is a cross-sectional view illustrating a schematic configuration of a light emitting device according to the seventh embodiment.

[0073] The light emitting device 100F differs from the configuration of the light emitting device 100 of the first embodiment in that the second upper surface 20Ab of the light-transmissive member 20A has a recess 25 between itself and the first side surface 20Ad, and the first side surface 20Ad forms a side surface of the recess 25. The light emitting device 100F has a recess 25 on the first side surface 20Ad side of the second upper surface 20Ab of the light-transmitting member 20A. The light-transmitting member 20A has the recess 25, which makes it possible to more clearly define the boundary between the first light-emitting region R1 and the second light-emitting region R2. Furthermore, by disposing the recess 25 between the first light-emitting section 11 and the second light-emitting section 12 in a plan view, it is possible to suppress chromaticity unevenness at the boundary between the first light-emitting region R1 and the second light-emitting region R2.

[0074] The depth D1 of the recess 25 (that is, the difference between the thickness of the second upper surface 20Ab and the thickness from the lower surface 20Ac to the bottom of the recess 25) is, for example, not less than 5 μm and not more than 45 μm. The width W1 of the recess 25 (that is, the length in the direction from the first upper surface 20Aa toward the second upper surface 20Ab) is, for example, not less than 25 μm and not more than 50 μm.

[0075] Eighth and Ninth Embodiments Fig. 8A is a schematic plan view illustrating the shape of a light emitting region of a light emitting device according to an eighth embodiment, and Fig. 8B is a schematic plan view illustrating the shape of a light emitting region of a light emitting device according to a ninth embodiment.

[0076] The light emitting device of the eighth embodiment is different from the light emitting device 100 of the first embodiment in the positions of the first point P1 and the second point P2 that contact the boundary between the first light emitting region R1 and the second light emitting region R2. The first point P1 and the second point P2 are shifted from the center toward the first light-emitting region R1 on one side of the light-emitting region R in a plan view. Moreover, the first point P1 is shifted further toward the first light-emitting region R1 than the second point P2. As a result, a straight line S2 connecting the first point P1 and the second point P2 crosses the light-emitting region R in a diagonal direction from the upper right to the lower right in the drawing. The area of ​​the second light-emitting region R2 is formed to be larger than the area of ​​the first light-emitting region R1. Moreover, the light-emitting region R is formed so that the boundary between the first light-emitting region R1 and the second light-emitting region R2 overlaps with the straight line S2.

[0077] The light emitting device of the ninth embodiment differs from the light emitting device of the eighth embodiment in that the positions of the first point P1 and the second point P2 which contact the boundary between the first light emitting region R1 and the second light emitting region R2 are shifted further toward the first light emitting region R1, and the boundary between the first light emitting region R1 and the second light emitting region R2 does not overlap with the straight line S3 which crosses the light emitting region R. The boundary between the first light-emitting region R1 and the second light-emitting region R2 is defined by two straight lines, which separate the first light-emitting region R1 from the second light-emitting region R2. In the eighth and ninth embodiments, a light emitting device having a high brightness region in the light emitting surface can be obtained. In addition, the chromaticity difference between the light emitted from the first light emitting region R1 and the light emitted from the second light emitting region R2 can be reduced, and the chromaticity unevenness in the light emitting surface of the light emitting device can be improved.

[0078] Tenth embodiment FIG. 9 is a cross-sectional view illustrating a schematic configuration of a light emitting device according to a tenth embodiment.

[0079] Compared to the configuration of the light emitting device 100 of the first embodiment, the light emitting device 100G differs in that it does not have protrusions 23, 24, the lower surface 20Bc of the light-transmitting member 20B is larger than the first surface 15a of the support substrate 15, and further includes a light-guiding member 90.

[0080] The light-transmitting member 20B has a lower surface 20Bc that is larger than the first surface 15a of the support substrate 15 and is joined to the first surface 15a of the support substrate 15. That is, the light-transmitting member 20B is arranged such that the outer edge of the light-emitting element 10 is positioned outside the outer edge of the light-transmitting member 20B in a plan view.

[0081] The light guide member 90 is a member that guides light from the light emitting element 10 to the light-transmissive member 20B. The light guide member 90 covers the side surface of the support substrate 15. The light guide member 90 may be, for example, an adhesive member that bonds the light emitting element 10 and the light-transmissive member 20B to each other and extends to the side surface of the support substrate 15. In this case, the light guide member 90 may be disposed between the support substrate 15 and the light-transmissive member 20B with a predetermined thickness. Furthermore, the light guide member 90 may be a member different from the adhesive member between the light emitting element 10 and the light-transmissive member 20B.

[0082] As an example of the shape of the light guiding member 90, in a cross-sectional view, the side surface is curved and inclined so that the width increases from the second surface 15b side of the support substrate 15 toward the lower surface 20Bc side of the light-transmitting member 20B. The cross-sectional shape of the side surface of the light guiding member 90 may be a straight shape or a curved shape. For example, when the side surface of the light guiding member 90 in a cross-sectional view is curved, the curved shape may be a curved shape recessed toward the light adjustment member 30 side, or may be a curved shape recessed toward the support substrate 15 side. Furthermore, the shape may have a portion recessed toward the light adjustment member 32 side and a portion recessed toward the support substrate 15 side.

[0083] For example, a light-transmitting resin can be used as the light guide member 90. For example, an organic resin such as an epoxy resin, a silicone resin, a phenol resin, or a polyimide resin can be used as the light guide member 90. Among them, it is preferable to use a silicone resin having high heat resistance. In addition, the light guide member 90 may contain the above-mentioned light diffusing member or phosphor.

[0084] <Eleventh embodiment> FIG. 10 is a cross-sectional view illustrating a schematic configuration of a light emitting device according to an eleventh embodiment.

[0085] The light emitting device 100H differs from the light emitting device 100G of the tenth embodiment in that a light-transmitting plate 81 is arranged on the first upper surface 20Ca of the light-transmitting member 20C, and that the light adjustment member 30B includes a first light adjustment member 31B covering the second upper surface 20Cb of the light-transmitting member 20C and a second light adjustment member 32 covering the side surface of the light-transmitting plate 81.

[0086] The light emitting device 100H includes a light emitting element 10, a light transmissive member 20C, a first light adjustment member 31B, and a light transmissive plate 81. The light transmissive member 20C includes a first upper surface 20Ca, a second upper surface 20Cb, and a lower surface 20Cc located on the opposite side of the first upper surface 20Ca and the second upper surface 20Cb. The first upper surface 20Ca and the second upper surface 20Cb are continuous via a first side surface 20Cd. The light transmissive member 20C is disposed on the light emitting element 10 with the lower surface 20Cc facing the support substrate 15 of the light emitting element 10. In the light transmissive member 20C, a thickness T1 from the lower surface 20Cc to the first upper surface 20Ca is greater than a thickness T2 from the lower surface 20Cc to the second upper surface 20Cb. The first light adjustment member 31B exposes the first upper surface 20Ca of the light-transmitting member 20C and covers the second upper surface 20Cb and the first side surface 20Cd. The light-transmitting plate 81 covers the first upper surface 20Ca of the light-transmitting member 20C and the upper surface of the first light adjustment member 31B. In the light-emitting device 100H, the first light adjustment member 31B is disposed between the second upper surface 20Cb of the light-transmitting member 20C and the light-transmitting plate 81. The first light adjustment member 31B is preferably disposed between the second upper surface 20Cb of the light-transmitting member 20C and the light-transmitting plate 81 in contact with the light-transmitting member 20C and the light-transmitting plate 81.

[0087] The thickness T1 from the lower surface 20Cc to the first upper surface 20Ca of the light-transmitting member 20C is preferably 10 μm or more from the viewpoint of improving mechanical strength, and is preferably 200 μm or less from the viewpoint of miniaturizing the light-emitting device 100H. More specifically, the thickness T1 from the lower surface 20Cc to the first upper surface 20Ca is more preferably 15 μm to 150 μm, and even more preferably 20 μm to 120 μm.

[0088] The thickness T2 from the lower surface 20Cc to the second upper surface 20Cb of the light-transmitting member 20C is smaller than the thickness T1, and from the viewpoint of improving mechanical strength and reducing size, similarly to the thickness T1, it is preferably 10 μm to 200 μm, more preferably 10 μm to 105 μm, and even more preferably 15 μm to 90 μm. The difference between the thickness T1 from the lower surface 20Cc to the first upper surface 20Ca of the light-transmitting member 20C and the thickness T2 from the lower surface 20Cc to the second upper surface 20Cb (i.e., the thickness of the first light adjustment member 31B covering the second upper surface 20Cb) can be appropriately adjusted according to a desired light distribution. For example, when the luminance of the second light-emitting region R2 is set to 5% to 80% of the luminance of the first light-emitting region R1, the thickness T2 of the light-transmitting member 20C at the second upper surface 20Cb can be 20% to 90% of the thickness T1 at the first upper surface 20Ca.

[0089] The light emitting device 100H may further include, as the light adjustment member 30B, a second light adjustment member 32 that exposes the upper surface of the light-transmitting plate 81 and covers the side surfaces of the light-transmitting plate 81, the side surfaces of the first light adjustment member 31B, the second side surface 20Ce and the third side surface 20Cf of the light-transmitting member 20C, and the side surfaces of the light emitting element 10. The second light adjustment member 32 covers the side surface of the support substrate 15 directly or via another member such as a light guiding member 90. In the light emitting device 100H, the light transmissive member 20C is a resin containing phosphor powder, and the first light adjustment member 31B and the second light adjustment member 32 are a resin containing particles of a light reflecting material. By using a resin as the base material of the light transmissive member 20C, the first light adjustment member 31B, and the second light adjustment member 32, it becomes easy to adjust the concentration of the phosphor powder and / or the light reflecting material contained in each member, and it becomes easy to adjust the brightness and chromaticity of the light emitted from each light emitting region.

[0090] In the light emitting device 100H, the phosphor contained in the light-transmissive member 20C may be dispersed in the light-transmissive member 20C, or may be unevenly distributed on the lower surface 20Cc side (i.e., the light emitting element 10 side). Even when the phosphor is unevenly distributed on the lower surface side in the light-transmissive member 20C, the amount of phosphor disposed between the lower surface 20Cc and the second upper surface 20Cb is made smaller than the amount of phosphor disposed between the lower surface 20Cc and the first upper surface 20Ca, thereby reducing the chromaticity difference between the light emitted from the first light-emitting region R1 and the light emitted from the second light-emitting region R2.

[0091] The light-transmitting plate 81 is disposed on the first upper surface 20Ca of the light-transmitting member 20C and the upper surface of the first light adjustment member 31B. This makes it possible to protect the first light adjustment member 31B and the light-transmitting member 20C, suppress deterioration of the first light adjustment member 31B and the light-transmitting member 20C, and protect the light-emitting surface.

[0092] The thickness of the light-transmitting plate 81 is preferably 20 μm or more from the viewpoint of improving mechanical strength, and is preferably 300 μm or less from the viewpoint of miniaturizing the light-emitting device 100H. In addition, when the first light adjustment member 31B and the light-transmitting member 20C are each made of a resin member, the thickness of the light-transmitting plate 81 is preferably greater than the thickness of the light-transmitting member 20C as a support for supporting the resin member. The thickness of the light-transmitting plate 81 is the thickness in the direction perpendicular to the upper surface of the wiring board 40 or the upper surface of the light-emitting element 10. The material of the light-transmitting plate 81 may be, for example, the same material as the light-transmitting plate 80.

[0093] <Twelfth embodiment> FIG. 11 is a cross-sectional view illustrating a schematic configuration of a light emitting device according to a twelfth embodiment.

[0094] The light emitting device 100I differs from the light emitting device 100H of the eleventh embodiment in that the light emitting element 10A includes only one light emitting portion 11A. In such a light emitting device 100I as well, a luminance difference is provided within the light emitting region R, and the reliability of the light emitting device can be improved. In the eleventh and twelfth embodiments, a light emitting device having a high brightness region in the light emitting surface can be obtained. In addition, the chromaticity difference between the light emitted from the first light emitting region R1 side and the light emitted from the second light emitting region R2 side can be reduced, and the chromaticity unevenness in the light emitting surface of the light emitting device can be improved.

[0095] The light emitting device and the manufacturing method thereof according to the present embodiment have been specifically described above by way of the embodiment of the invention, but the gist of the present invention is not limited to these descriptions and should be broadly interpreted based on the claims. In addition, various changes and modifications based on these descriptions are also included in the gist of the present invention. In addition, the above-mentioned embodiments can be implemented in combination with each other.

[0096] For example, the first light-emitting section and the second light-emitting section may have the same current density during light emission, or may have different current densities during light emission. The current density of the current passing through the light-emitting layer of the first light-emitting section and the current density of the current passing through the light-emitting layer of the second light-emitting section may be different, thereby adjusting the luminance difference between low luminance and high luminance. The current density during light emission may be made different by using a wiring board that can drive the first light-emitting section and the second light-emitting section separately. Even if the wiring board has wiring that connects the first light-emitting section and the second light-emitting section in series, the current density during light emission may be made different by making the areas of the first light-emitting section and the second light-emitting section in a plan view different. In addition, when the areas of the first light-emitting section and the second light-emitting section are the same in a plan view, the current densities during light emission of the first light-emitting section and the second light-emitting section may be made different by arranging a constant current diode in a wiring board that has wiring that connects the first light-emitting section and the second light-emitting section in series. Furthermore, even if the areas of the first light-emitting unit and the second light-emitting unit are different when viewed in a plane, the first light-emitting unit and the second light-emitting unit may be driven separately to make the current density of the first light-emitting unit and the second light-emitting unit different when they emit light.

[0097] The light-emitting element may have a plurality of light-emitting sections including a first light-emitting section and a second light-emitting section, or may have one light-emitting section. The number of element electrodes arranged in one light-emitting section may be two, or may be four or more. One light-emitting section may include a plurality of semiconductor laminates arranged in an overlapping manner. The light-transmitting member may have a laminated structure of two or more layers. In this case, the phosphor concentration may be the ratio of the phosphor to the total amount of the entire layer including the phosphor in the light-transmitting member.

[0098] Furthermore, in the light-emitting region R of the light-emitting device, a reflective film such as a dielectric multilayer film may be disposed on the upper surface of the light-transmitting member 20 or the light-transmitting plate 80. This makes it easier to adjust the luminance and luminous intensity of the light emitted from the first light-emitting region R1 and the second light-emitting region R2.

[0099] In addition, in the manufacturing method of the light emitting device, the order of some steps is not limited, and the order may be changed. For example, a semiconductor wafer to which one light-transmitting member is bonded may be divided into individual pieces to produce a light emitting element to which a flat light-transmitting member (i.e., having no second upper surface) is bonded, and then the light emitting element may be placed on a wiring board, and then a processing such as forming a first upper surface and a second upper surface may be performed on the light-transmitting member. Alternatively, before placing a light emitting element to which a flat light-transmitting member (i.e., having no second upper surface) is bonded on a wiring board, a processing such as forming a first upper surface and a second upper surface may be performed on the light-transmitting member bonded to the light emitting element, and then the light emitting element may be placed on the wiring board. Alternatively, after processing the light-transmitting member bonded to the semiconductor wafer, the light adjusting member may be disposed, and then the light-transmitting member on which the light adjusting member is disposed may be singulated. Alternatively, the light-emitting element may be disposed on a wiring board, and the singulated light-transmitting member may be disposed on the light-emitting element on the wiring board, and then the light adjusting member may be disposed.

[0100] A light emitting device according to an embodiment of the present disclosure is, for example, as follows. [Section 1] A light emitting device having a light emitting region on an upper surface thereof, the light emitting region including a first light emitting region and a second light emitting region disposed adjacent to the first light emitting region, a light emitting element including: a support substrate having a first surface and a second surface located on the opposite side to the first surface; and a light emitting portion disposed on the second surface of the support substrate and including a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer in that order; a translucent member having a first upper surface, a second upper surface, a lower surface located on the opposite side of the first upper surface and the second upper surface, a first side surface continuing to the first upper surface and the second upper surface, a second side surface continuing to the second upper surface and the lower surface, and a third side surface continuing to the first upper surface and the lower surface, wherein a thickness from the lower surface to the first upper surface is greater than a thickness from the lower surface to the second upper surface, and the lower surface is disposed so as to face a first surface of the support substrate; a light adjusting member exposing the first upper surface of the light-transmitting member and covering the second upper surface and the first side surface, In a plan view, the first light-emitting region includes the first upper surface, the second light-emitting region includes the second upper surface, and an area of ​​the second light-emitting region is 35% or more and 95% or less of an area of ​​the light-emitting region; A light emitting device in which the boundary between the first light emitting region and the second light emitting region has a first point and a second point that are tangent to the outer periphery of the light emitting region, and in a planar view, a straight line connecting the first point and the second point is a straight line that crosses the light emitting region. [Section 2] 2. The light emitting device according to item 1, wherein the light emitting element has a plurality of the light emitting portions disposed separately from each other on the second surface of the supporting substrate. [Section 3] 3. The light emitting device according to item 2, wherein in a plan view, a boundary between the first light emitting region and the second light emitting region is located between a plurality of the light emitting sections. [Section 4] Item 4. The light emitting device according to item 2 or 3, wherein the plurality of light emitting sections have different current densities when emitting light. [Section 5] 4. The light emitting device according to any one of items 1 to 3, wherein the light-transmitting member contains a phosphor. [Section 6] 6. The light emitting device according to item 5, wherein the light adjusting member includes a phosphor having a different emission peak wavelength from the phosphor included in the light-transmitting member. [Section 7] 7. The light emitting device according to any one of items 1 to 6, wherein the light adjustment member is a resin containing a light reflective material. [Section 8] 8. The light emitting device according to any one of items 1 to 7, wherein the light adjustment member covers the second side surface and the third side surface of the light transmissive member and a side surface of the light emitting element. [Section 9] 7. The light emitting device according to any one of items 1 to 6, wherein the light adjustment member is an inorganic member containing a light reflective material. [Section 10] Item 10. The light emitting device according to item 9, further comprising a light adjusting member exposing an upper surface of the light adjusting member and a first upper surface of the light-transmitting member, and covering a side surface of the light adjusting member, the second side surface and the third side surface of the light-transmitting member, and a side surface of the light emitting element. [Section 11] Item 11. The light emitting device according to any one of items 1 to 10, wherein the first upper surface of the light transmissive member and an upper surface of the light adjusting member are located on the same plane. [Section 12] Item 12. The light emitting device according to any one of items 1 to 11, further comprising a light-transmitting plate that covers an upper surface of the light adjustment member. [Section 13] Item 13. The light emitting device according to any one of items 1 to 12, wherein a surface roughness Ra of the second upper surface is larger than a surface roughness Ra of the first upper surface. [Section 14] Item 14. The light emitting device according to any one of items 1 to 13, wherein the second upper surface has a curved portion between the second upper surface and the first side surface. [Section 15] Item 14. The light emitting device according to any one of items 1 to 13, wherein the second upper surface has a recess between itself and the first side surface, the first side surface forming a side surface of the recess. [Section 16] Item 16. The light emitting device according to any one of items 1 to 15, wherein the light emitting section includes a plurality of the semiconductor laminates arranged in an overlapping manner. [Industrial Applicability]

[0101] The light emitting device according to the embodiment of the present disclosure can be suitably used for vehicle lighting such as headlights, etc. In addition, the light emitting device according to the embodiment of the present disclosure can be used as a backlight source for liquid crystal displays, various lighting fixtures, large displays, various display devices such as advertisements and destination guides, and further, image reading devices in digital video cameras, facsimiles, copy machines, scanners, etc., projector devices, etc. [Explanation of symbols]

[0102] 10, 10A light emitting element 101 Semiconductor Wafer 11 First light emitting part 12 Second light emitting part 11A Light emitting part 111 First semiconductor layer 121 First semiconductor layer 112 Light-emitting layer 122 Light-emitting layer 113 Second semiconductor layer 123 Second semiconductor layer 15 Support substrate 15a 1st page 15b Side 2 151 Crack 16 First element electrode 17 Second element electrode 161 N side electrode 162 P side electrode 163 N side electrode 171 N side electrode 172 P side electrode 173 N side electrode 20, 20A, 20B, 20C Translucent material 20a, 20Aa, 20Ca 1st top surface 20b, 20Ab, 20Cb 2nd top surface 20c, 20Ac, 20Bc, 20Cc bottom surface 20d, 20Cd 1st side 20e, 20e 2nd side 20f, 20Cf 3rd side 20b1 Curved surface part 200 Translucent material 200a 1st page 200b 2nd page 210 Translucent material 23, 24 Protrusion 25 Recess 30, 30A, 30B Light adjustment member 31 Light adjustment materials 31A, 31B Light adjustment member (first light adjustment member) 32 Light adjustment member (second light adjustment member) 40 Wiring board 41 Base material 42 Wiring 421 1st wiring 422 2nd wiring 423 3rd wiring 441 Electronic Components 50 Conductive material 61 Blade 611 Removal Line 612 First Groove 62 Blade 621 Removal Line 622 Second Groove 70 Colette 71 Adjustment part 72 Adsorption part 80 Translucent plate 81 Translucent plate 90 Light guide member 100, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I Light-emitting device R Light Emitting Area R1 First light emitting area R2 Second light emitting area P1 1st point P2 2nd point S1, S2, S3 straight line T1, T2, T3 thickness D1 Depth W1 width

Claims

1. A light emitting device having a light emitting region on an upper surface thereof, the light emitting region including a first light emitting region and a second light emitting region disposed adjacent to the first light emitting region, a light emitting element including: a support substrate having a first surface and a second surface located on the opposite side to the first surface; and a light emitting portion disposed on the second surface of the support substrate and including a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer in that order; a translucent member having a first upper surface, a second upper surface, a lower surface located on the opposite side of the first upper surface and the second upper surface, a first side surface continuing to the first upper surface and the second upper surface, a second side surface continuing to the second upper surface and the lower surface, and a third side surface continuing to the first upper surface and the lower surface, wherein a thickness from the lower surface to the first upper surface is greater than a thickness from the lower surface to the second upper surface, and the lower surface is disposed so as to face a first surface of the support substrate; a light adjusting member exposing the first upper surface of the light-transmitting member and covering the second upper surface and the first side surface, In a plan view, the first light-emitting region includes the first upper surface, the second light-emitting region includes the second upper surface, and an area of ​​the second light-emitting region is 35% or more and 95% or less of an area of ​​the light-emitting region, A light emitting device, wherein the boundary between the first light emitting region and the second light emitting region has a first point and a second point that are tangent to the outer periphery of the light emitting region, and in a planar view, a straight line connecting the first point and the second point is a straight line that crosses the light emitting region.

2. The light emitting device according to claim 1 , wherein the light emitting element includes a plurality of the light emitting portions disposed separately from each other on the second surface of the supporting substrate.

3. The light emitting device according to claim 2 , wherein in a plan view, a boundary between the first light emitting region and the second light emitting region is located between a plurality of the light emitting portions.

4. The light emitting device according to claim 2 , wherein the plurality of light emitting sections have different current densities when emitting light.

5. The light emitting device according to claim 1 , wherein the light-transmitting member includes a phosphor.

6. The light emitting device according to claim 5 , wherein the light adjusting member includes a phosphor having a different emission peak wavelength from the phosphor included in the light-transmitting member.

7. The light emitting device according to claim 1 , wherein the light adjusting member is made of a resin containing a light reflective material.

8. The light emitting device according to claim 1 , wherein the light adjusting member covers the second side surface and the third side surface of the light transmissive member and a side surface of the light emitting element.

9. The light emitting device according to claim 1 , wherein the light adjusting member is an inorganic member containing a light reflective material.

10. 10. The light emitting device according to claim 9, further comprising a light adjusting member exposing an upper surface of the light adjusting member and a first upper surface of the translucent member, and covering a side surface of the light adjusting member, the second side surface and the third side surface of the translucent member, and a side surface of the light emitting element.

11. The light emitting device according to claim 1 , wherein the first upper surface of the light-transmitting member and an upper surface of the light adjusting member are located on the same plane.

12. The light emitting device according to claim 1 , further comprising a light-transmitting plate covering an upper surface of the light adjusting member.

13. The light emitting device according to claim 1 , wherein a surface roughness Ra of the second upper surface is greater than a surface roughness Ra of the first upper surface.

14. The light emitting device according to claim 1 , wherein the second upper surface has a curved portion between the second upper surface and the first side surface.

15. The light emitting device according to claim 1 , wherein the second upper surface has a recess between itself and the first side surface, the first side surface forming a side surface of the recess.

16. The light emitting device according to claim 1 , wherein the light emitting portion includes a plurality of the semiconductor laminates arranged in an overlapping manner.

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