Substrate holding apparatus, film deposition apparatus, and method for manufacturing electronic devices

Abstract

To provide a technique capable of stably performing temperature control in a film deposition apparatus.SOLUTION: A substrate holding device used in a film deposition apparatus for performing a film deposition to a substrate includes: an electrostatic chuck C1 for absorbing a substrate; and a temperature control tube TP in which a temperature control medium for performing temperature control of the electrostatic chuck flows. The electrostatic chuck C1 has a temperature control tube installation part 253 in which the temperature control tube TP is installed such that at least a part of the temperature control tube TP is embedded inside the electrostatic chuck C1.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a substrate holding device for use in a film forming apparatus. [Background technology]

[0002] In recent years, flat panel display devices such as organic electroluminescence (EL) display devices have been used as display screens for monitors, televisions, smartphones, etc. The panel of an organic EL display device has a structure in which an organic layer that emits light is formed between two opposing electrodes (a cathode electrode and an anode electrode). When forming an organic EL display panel using a film formation device, the periphery of the substrate is held by a substrate holder placed in the chamber of the film formation device, and an evaporation source installed at the bottom of the chamber is heated to release a metal or organic evaporation material, which is then evaporated onto the underside of the substrate through a mask.

[0003] Here, the substrate, whose peripheral portion is held, may bend at its center due to its own weight. As the substrate size increases, the bending of the center portion also becomes larger, and the effect on deposition accuracy also becomes greater. As a method for reducing such bending of the substrate, Patent Document 1 proposes a technique for holding the substrate using an electrostatic chuck (ESC). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2019-099910 A Summary of the Invention [Problem to be solved by the invention]

[0005] The evaporation source in the deposition chamber is very hot, and there is a large temperature difference between the evaporation source and other components in the deposition chamber. Therefore, it is difficult to control the temperature of the electrostatic chuck, substrate, and mask, and they may deform or change in size due to thermal expansion. The effect of this size change may cause a decrease in alignment accuracy and a deterioration in film quality.

[0006] An object of the present invention is to provide a technique for stably controlling the temperature in a film forming apparatus. [Means for solving the problem]

[0007] In order to solve the above problems, the substrate holding device of the present invention comprises: A substrate holding device used in a film forming apparatus that forms a film on a substrate, an electrostatic chuck for adsorbing the substrate; a temperature control pipe through which a temperature control medium flows for controlling the temperature of the electrostatic chuck; Equipped with The electrostatic chuck has a temperature control tube installation portion in which the temperature control tube is installed so that at least a portion of the temperature control tube is embedded inside the electrostatic chuck. In order to solve the above problems, the substrate holding device of the present invention comprises: A substrate holding device used in a film forming apparatus that forms a film on a substrate, an electrostatic chuck for adsorbing the substrate; a temperature control pipe through which a temperature control medium flows for controlling the temperature of the electrostatic chuck; a temperature control pipe installation member fixed to a surface of the electrostatic chuck opposite to an attracting surface that attracts a substrate, the temperature control pipe being at least partially embedded therein; The present invention is characterized by comprising: Effect of the Invention

[0008] According to the present invention, stable temperature control can be performed in a film forming apparatus. [Brief description of the drawings]

[0009] [Figure 1] FIG. 2 is a schematic plan view showing the configuration of a film forming apparatus. [Diagram 2] FIG. 2 is a cross-sectional view showing the internal configuration of a film forming chamber. [Diagram 3] FIG. 1 is a schematic diagram showing an example of a manufacturing line for an organic EL display device. [Figure 4] FIG. 2 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the first embodiment of the present invention. [Diagram 5] 5 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to a comparative example. FIG. [Figure 6] FIG. 1 is a schematic diagram showing an example of temperature control in an organic EL production line. [Figure 7] FIG. 6 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to a second embodiment of the present invention. [Figure 8] FIG. 11 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to a third embodiment of the present invention. [Figure 9] 1A to 1C are diagrams illustrating a method for manufacturing an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] The following describes in detail the embodiments of the present invention. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, the hardware and software configurations, process flow, manufacturing conditions, dimensions, materials, shapes, relative positions, and the like of the device in the following description are not intended to limit the scope of the present invention to these alone, unless otherwise specified.

[0011] The present invention is suitable for a film formation apparatus that forms a thin film of a film formation material on the surface of a film formation target such as a substrate by deposition or sputtering. The present invention can be understood as a temperature adjustment mechanism, a substrate holding device, a film formation apparatus, and a temperature adjustment method or control method using these devices. The present invention can also be understood as an electronic device manufacturing apparatus and a control method thereof, and an electronic device manufacturing method. The present invention can also be understood as a program for causing a computer to execute the temperature adjustment method or control method, or a storage medium storing the program. The storage medium may be a non-transitory storage medium readable by a computer.

[0012] In the present invention, any material can be used for the substrate, such as glass, resin, metal, silicon, etc. Any material can be used for the film formation, such as organic materials and inorganic materials (metals, metal oxides). In the following description, the term "substrate" includes substrate materials on whose surfaces one or more films have already been formed. The technology of the present invention is typically applied to manufacturing equipment for electronic devices and optical components. In particular, it is suitable for organic electronic devices, such as organic EL displays equipped with organic EL elements and organic EL display devices using the same. The present invention can also be used for thin-film solar cells and organic CMOS image sensors.

[0013] <Embodiment> (Device configuration) 1 is a plan view showing a schematic configuration of a film forming apparatus 1. Here, a manufacturing line for organic EL displays will be described. When manufacturing an organic EL display, a substrate of a given size is carried into the manufacturing line, and after the organic EL and metal layers are formed, post-processing steps such as cutting the substrate are carried out.

[0014] The film forming apparatus 1 includes a transfer chamber 130 disposed in the center, and a plurality of film forming chambers 110 (110a to 110d) and a mask stock chamber 120 (120a, 120b) disposed around the transfer chamber 130. The film forming chamber 110 includes a chamber in which a film forming process is performed on a substrate S. The mask stock chamber 120 stores masks before and after use. A transfer robot 140 installed in the transfer chamber 130 transfers the substrate S and the mask M into and out of the transfer chamber 130. The transfer robot The robot 140 is, for example, a robot having a robot hand for holding a substrate S or a mask M attached to an articulated arm.

[0015] The pass chamber 150 transports the substrate S flowing from the upstream side in the substrate transport direction to the transport chamber 130. The buffer chamber 160 transports the substrate S, for which the film formation process in the transport chamber 130 has been completed, to another film formation cluster on the downstream side. When the transport robot 140 receives the substrate S from the pass chamber 150, it transports it to one of the multiple film formation chambers 110. The transport robot 140 also receives the substrate S, for which the film formation process has been completed, from the film formation chamber 110 and transports it to the buffer chamber 160.

[0016] 1 constitutes one film formation cluster, and other film formation clusters can be connected to the upstream or downstream side. A swirl chamber 170 for changing the direction of the substrate S is provided further upstream of the pass chamber 150 and further downstream of the buffer chamber 160. Each chamber, such as the film formation chamber 110, the mask stock chamber 120, the transfer chamber 130, the buffer chamber 160, and the swirl chamber 170, is maintained in a high vacuum state during the manufacturing process.

[0017] The film forming materials in the film forming chambers 110a to 110d of the film forming apparatus 1 may be the same or different. For example, film forming sources of different film forming materials may be arranged in the film forming chambers 110a to 110d, and a laminated structure may be formed while the substrate S moves in sequence through the film forming chambers 110a to 110d. Also, film forming sources of the same film forming material may be arranged in the film forming chambers 110a to 110d, so that film formation may be performed on the substrates S in parallel. Also, a first film forming material may be arranged in the film forming chambers 110a and 110c, and a second film forming material may be arranged in the film forming chambers 110b and 110d, and a control may be performed such that a first layer is formed in the film forming chamber 110a or 110c, and then a second layer is formed in the film forming chamber 110b or 110.

[0018] Depending on the type of electrostatic chuck, the force of adsorption of the substrate can be increased when a conductor is attached to the substrate. In such a case, the electrostatic chuck can be effectively adsorbed when a thin film of a metal material that will become an electrode layer has already been formed in the region of the substrate where the organic EL element is to be formed (typically the center of the substrate). For example, when an electrode layer is formed on a substrate in the deposition chamber 110a, and organic layers are sequentially formed in the deposition chambers 110b to 110d, it is effective to place electrostatic chucks in the deposition chambers 110b to 110d.

[0019] (Film forming chamber) 2 is a cross-sectional view showing the internal configuration of the film formation chamber 110. In the film formation chamber 110, a series of film formation processes are performed. The series of film formation processes include, for example, receiving the substrate S and mask M from the transfer robot 140, transferring the substrate S and mask M to the transfer robot 140, alignment for adjusting the relative positional relationship between the substrate S and mask M, fixing the substrate S to the mask M, and film formation. In the following description, an XYZ Cartesian coordinate system is used in which the vertical direction is the Z direction, and rotation around the Z axis is represented by θ.

[0020] The film formation chamber 110 includes a chamber 200. The interior of the chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas during film formation. Inside the chamber 200, an electrostatic chuck C, a magnet plate MP, a temperature control member TM, a temperature control tube TP, a substrate support 210, a mask table 221, an evaporation source 240 (film formation source), and the like are provided.

[0021] The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate. For example, a metal mask in which a metal foil on which a pattern is formed is supported by a frame can be used as the mask M. The mask M is placed on a mask stage 221. In the configuration of this embodiment, the substrate S is positioned and placed on the mask M, and then film formation is performed.

[0022] The substrate support unit 210 has a plurality of receiving members for receiving the substrate S transferred into the deposition chamber. The electrostatic chuck C is a substrate holding means in the film formation chamber, and attracts and holds the substrate S supported by the substrate support 210 by electrostatic force. The electrostatic chuck C abuts against the surface of the substrate S opposite to the surface in contact with the mask M (the surface on which a film is to be formed).

[0023] Electrostatic chuck C has a structure in which an electric circuit such as a metal electrode is embedded in a plate-shaped base material made of ceramics, etc. Generally, electrostatic chucks are classified into types such as gradient force type, Coulomb force type, and Johnsen-Rahbek force type according to the principle of adhering to the substrate, and in any case, the adhering force can be increased by increasing the applied adhering voltage.

[0024] The substrate support part 210 may have a pressing tool corresponding to the support tool 210a. By sandwiching the end part of the substrate S between the support tool 210a and the pressing tool, the substrate S can be held by the substrate support part 210 in addition to the electrostatic chuck C, so that the substrate S becomes more stable.

[0025] The magnet plate MP is provided to attract the mask M and bring it into close contact with and adsorb it to the film-forming surface of the substrate S. The substrate S, which has been attracted to the electrostatic chuck C and has its relative position adjusted (aligned), is placed on the upper surface of the mask M (the film-forming surface of the substrate S is joined to the mask M), and the magnet plate MP is lowered from above the electrostatic chuck C to abut against the upper surface of the electrostatic chuck C. At this time, a heat transfer member may be provided between the magnet plate MP and the electrostatic chuck C, and the magnet plate MP may be brought into abutment against the upper surface of the electrostatic chuck C via the heat transfer member. The magnet plate MP applies a magnetic force to the mask M by sandwiching the electrostatic chuck C and the substrate S (applying a magnetic attraction force to attract it upward (toward the substrate S)), thereby bringing the mask M into close contact with the substrate S.

[0026] The film forming apparatus 1 according to this embodiment includes a temperature control unit T as a temperature control mechanism (temperature control means) for suppressing a temperature rise of the substrate S during film formation to prevent alteration or deterioration of the organic material. The temperature control unit T is composed of, for example, a temperature control member TM and a temperature control pipe TP, and the specific configuration will be described later.

[0027] The evaporation source 240 is a film forming means including a container such as a crucible for accommodating an evaporation material, a heater, a shutter, a driving mechanism, an evaporation rate monitor, etc. The film forming source is not limited to an evaporation source, and a sputtering device may be used.

[0028] An alignment stage 280, an electrostatic chuck lifting mechanism 291, a magnet plate lifting mechanism 292, and the like are provided at the upper outer side of the chamber 200. The alignment stage 280 is a mechanism for moving the electrostatic chuck C and the magnet plate MP in horizontal directions (XYθ directions). The electrostatic chuck lifting mechanism 291 is a mechanism for lifting and lowering the electrostatic chuck C in the Z-axis direction. The magnet plate lifting mechanism 292 is a mechanism for lifting and lowering the magnet plate MP in the Z-axis direction. These make it possible to adjust the position of the electrostatic chuck C with respect to the substrate S (adjustment of the relative distance) and adjust the position of the magnet plate MP with respect to the mask M in a direction intersecting a plane along the film formation surface of the substrate S.

[0029] The alignment stage 280 moves the electrostatic chuck C by driving a motor 281 in accordance with a control signal transmitted from a control unit 270 (described later), thereby moving the substrate S attracted and held by the electrostatic chuck C in the X and Y directions and rotating it in the θ direction. Note that a known configuration such as a UVW type actuator can be used as a driving mechanism for the alignment stage 280.

[0030] The electrostatic chuck lifting mechanism 291 includes a motor (not shown) for driving the electrostatic chuck to lift and lower, an actuator (not shown) for driving the electrostatic chuck to lift and lower, and the like, and lifts and lowers the electrostatic chuck C in the Z-axis direction. The electrostatic chuck C is supported by a magnet plate MP and an actuator (not shown) for raising and lowering the magnet plate MP in the Z-axis direction. The actuator is configured to receive the driving force of a motor to raise and lower a shaft supporting the electrostatic chuck C. Specific examples of the actuator include a linear guide and a ball screw.

[0031] The electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 are mounted on an alignment stage 280. Therefore, when the alignment stage 280 moves in the horizontal direction (XYθ direction), the electrostatic chuck lifting mechanism 291 and the magnet plate lifting mechanism 292 (and therefore the electrostatic chuck C and the magnet plate MP) also move in the horizontal direction (XYθ direction). As a result, even if, for example, a positional deviation occurs between the substrate S and the electrostatic chuck C, the relative position therebetween can be adjusted. Similarly, even if, for example, a positional deviation occurs between the mask M and the magnet plate MP, the relative position therebetween can be adjusted.

[0032] In this embodiment, the substrate support part 210 and the mask table 221 are fixed in the horizontal direction (XYθ direction) with respect to the chamber 200, but are configured to be movable up and down in the vertical direction (Z axis direction). A lifting mechanism for lifting and lowering the substrate support part 210 and the mask table 221 in the vertical direction is provided on the outer upper surface of the chamber 200 so as to be separated and independent from the alignment stage.

[0033] A lifting mechanism (not shown) for the substrate support part 210 and the mask table 221 is installed on a base plate (not shown) separate from the base plate 282, which is fixed to the outer upper surface of the chamber 200, and is separate and independent from the alignment stage 280. Therefore, even if the alignment stage 280 moves in the horizontal (XYθ) directions, the substrate support part 210 and the mask table 221 do not move in the horizontal (XYθ) directions.

[0034] In this embodiment, the position of the substrate S is adjusted (by adjusting the position of the electrostatic chuck C), but as long as the substrate S and the mask M can be aligned relative to each other, the position of the mask M may be adjusted, or both the substrate S and the mask M may be adjusted.

[0035] When the electrostatic chuck C holds the substrate S supported by the substrate support part 210, first, the electrostatic chuck lifting mechanism 291 lowers the electrostatic chuck C so that the electrostatic chuck C abuts on or is sufficiently close to the substrate S. Then, the control part 270 controls the power supply 290 to apply a predetermined attracting voltage to the electrode embedded in the electrostatic chuck C. As a result, the substrate S is held by the electrostatic chuck C.

[0036] Subsequently, during alignment, the electrostatic chuck lifting mechanism 291 further lowers the electrostatic chuck C to bring the substrate S closer to the mask M. Then, the alignment stage 280 performs alignment.

[0037] Here, the electrostatic chuck C in this embodiment is an element constituting the substrate holding device of the present invention. The elements constituting the substrate holding device of the present invention may include a power supply 290, a control unit 270, an electrostatic chuck lifting mechanism 291, etc. Various forms of temperature adjustment units T or components of the temperature adjustment units T, which will be described later, are included in the elements constituting the substrate holding device or film forming apparatus of the present invention as temperature control means or the like in the present invention.

[0038] Next, when the film is formed, the evaporation source 240 releases the film forming material. When the film formation is completed, the magnet plate lifting mechanism 292 lifts the magnet plate MP, and the electrostatic chuck lifting mechanism 291 lifts the electrostatic chuck C, and the substrate S on which the film has been formed is delivered to the transfer robot 140. Then, the voltage applied to the electrostatic chuck C is set to a predetermined peeling voltage (for example, 0 V). Then, the substrate S is released from its hold.

[0039] A camera 262 that performs optical imaging and generates image data is provided at the upper outside of the chamber 200. The camera 262 captures images through a vacuum sealing window provided in the chamber 200. In this embodiment, a plurality of cameras 262 are provided corresponding to the four corners of the substrate S. Each camera 262 is disposed so that the imaging range includes a substrate alignment mark provided at a corner of the substrate S and a mask alignment mark provided at a corner of the mask M.

[0040] During alignment, the camera 262 captures images of the substrate S and mask M and outputs image data to the control unit 270. The control unit 270 analyzes the captured image data and acquires position information of the substrate alignment mark and the mask alignment mark by a method such as pattern matching processing. Then, based on the positional deviation amount between the substrate alignment mark and the mask alignment mark, it calculates the XY direction, movement distance, and rotation angle θ for moving the substrate S. Then, it converts the calculated movement amount into the drive amount of the stepping motor, servo motor, etc. equipped in each actuator of the alignment stage 280, and generates a control signal. Note that two-stage alignment may be performed using a camera for rough alignment with a low resolution but a wide field of view and a camera for fine alignment with a narrow field of view but a high resolution.

[0041] The control unit 270 is an information processing device that communicates with each component of the film forming apparatus 1 via a control line or wireless communication (not shown), receives data from each component, and sends a signal to each component to control the operation. The control unit 270 can be configured by, for example, a computer having a processor, a memory, a storage, an I / O, and the like. In this case, the function of the control unit 270 is realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit 270 may be configured by a circuit such as an ASIC or an FPGA. Note that a control unit 270 may be provided for each film forming chamber, or one control unit 270 may control multiple film forming chambers.

[0042] The power supply 290 is a high-voltage power supply device capable of supplying voltage to each component of the film forming apparatus 1 via conductive wires (not shown). The power supply 290 controls the polarity and magnitude of the applied voltage in accordance with instructions from the control unit 270. The power supply 290 can be considered as a voltage supplying means. By controlling the polarity and magnitude of the voltage (adsorption voltage) applied to the electrode of the electrostatic chuck C, the adsorption force to the substrate S can be controlled. Note that the power supply 290 and the control unit 270 may be considered to collectively constitute the power supply of the film forming apparatus 1.

[0043] The application of the present invention is not limited to the cluster-type deposition apparatus described above, but can also be applied to an in-line deposition apparatus in which a plurality of chambers are connected in a vacuum and a substrate held by a substrate carrier is moved between the chambers to deposit a film.

[0044] (Organic EL display manufacturing line) An example of a manufacturing line for an organic EL display device is shown in Fig. 3. The manufacturing line shown in Fig. 3 is a line in which five film formation clusters (film formation devices) 1 (film formation clusters 1-1 to 1-5) each having the four film formation chambers 110 shown in Fig. 1 and one film formation cluster 1 (film formation cluster 1-6) each having two film formation chambers 110 are connected in series.

[0045] Among the five film formation clusters 1-1 to 1-5, the four film formation clusters 1-1 to 1-4 located upstream in the line constitute a first organic vapor deposition unit 102 that forms a total of eight organic layers in the production line, and two organic layers are deposited on the substrate S in each film formation cluster. A deposition cluster 1-5 downstream of the line 102 constitutes a metal deposition section 103 in the production line, where two metal layers are deposited on the substrate S. A deposition cluster 1-6 downstream of the line constitutes a second organic deposition section 104 in the production line, where one organic layer is deposited on the substrate S.

[0046] In a manufacturing line for an organic EL display device, a substrate S is first inserted into a pretreatment section 101, where it is subjected to necessary pretreatment processes, and then conveyed to a post-treatment process via a first organic vapor deposition section 102, a metal vapor deposition section 103, and a second organic vapor deposition section 104. In the manufacturing line shown in Fig. 3, the substrate S flows to a post-treatment process, for example, via route A or route B indicated by the arrows in the figure.

[0047] The substrate S is heated in each of the deposition sections 102 to 104. That is, the substrate S is repeatedly heated as it passes through the production line. In general, to evaporate the deposition source, the deposition source is heated to about 450° C. for forming an organic film, and to about 1300° C. for forming a metal film.

[0048] Assuming that the temperature of the substrate S rises by 0.1°C in the organic deposition chamber and 0.3°C in the metal deposition chamber in the above line, since there is almost no heat dissipation in a vacuum environment, the substrate S, which is put into the pretreatment unit 101 at 23°C, is vapor-deposited 11 times and rises to 24.5°C. If the thermal expansion coefficient of a typical glass substrate is 3.8×10^-6 / m / °C, it will expand by 3.8×10^-6×24.5°C=93.1μm per meter. In addition, when moving from one organic deposition chamber to the next, it will expand by 3.8×0.1=0.38μm / m. A G8H size glass substrate, which is classified as a large size, has a long side of 2.5m, and will expand by 0.38×2.5=0.95μm even with a temperature change of 0.1°C.

[0049] If the above-mentioned size change occurs, even if the substrate S and the mask M are aligned to within ±2.0 μm, the substrate S may stretch and shift, resulting in a decrease in alignment accuracy. Furthermore, the decrease in alignment accuracy may result in a decrease in film quality, making it difficult to obtain good deposition results. Furthermore, the size change caused by the high temperature during deposition may also occur in the electrostatic chuck C, and the size change of the electrostatic chuck C may also cause a further decrease in alignment accuracy.

[0050] (Temperature control mechanism) The film forming apparatus 1 in this embodiment includes a temperature control mechanism (temperature control means) for controlling the temperature of the electrostatic chuck C to which the substrate S is attached, as a means for controlling the temperature of the substrate S to suppress the influence of the elongation of the substrate S in the organic EL manufacturing line described above. By controlling the temperature of the electrostatic chuck C, the heat given to the substrate S by the deposition is absorbed through the electrostatic chuck C, suppressing the temperature rise of the substrate S. Furthermore, the temperature of the substrate S before being input to the next process is controlled so that the substrate S can be sent to the next process after the temperature is lowered to a suitable input temperature for the next process. Note that, although an example in which the temperature of the substrate rises is shown here, the temperature of the substrate may be lowered during the transfer process. In that case, the temperature is controlled so that the substrate S can be sent to the next process after the temperature is raised to a suitable input temperature for the next process. The temperature of the substrate is not limited to being kept constant, and may be controlled to a different target substrate temperature in each chamber. Depending on the purpose, the temperature control means may be appropriately adopted as a means for both heating and cooling, a means for only heating, or a means for only cooling.

[0051] Below, as specific configuration examples of the temperature adjustment mechanism, temperature adjustment units T1, T2 and electrostatic chucks C1, C2 according to Examples 1 and 2 are shown. In addition, in order to explain the effects of this embodiment, a temperature adjustment unit T0 and an electrostatic chuck C0 according to a comparative example are shown.

[0052] <Example 1> FIG. 4A is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the first embodiment of the present invention. 4(b) is a schematic cross-sectional view showing details of a temperature control pipe installation portion of the temperature control pipe TP installed in the electrostatic chuck C1.

[0053] 4(a), the temperature adjustment means in the film forming apparatus 1 of this embodiment includes a temperature adjustment unit T1. The temperature adjustment unit T1 includes a temperature adjustment member TM, a non-magnetic metal member MM, a temperature adjustment pipe TP, etc. Elements constituting the temperature adjustment means include, in addition to the temperature adjustment unit T1, a temperature sensor TS1, a temperature sensor TS2 (see FIG. 2), a magnet plate MP as a first heat transfer member, an electrostatic chuck C1 as a second heat transfer member, etc.

[0054] (Temperature control material TM) The temperature control member TM in this embodiment is a plate-shaped temperature control member incorporating a Peltier element. The temperature control member TM is provided integrally with the magnet plate MP and moves up and down together with the magnet plate MP. Specifically, the temperature control member TM is disposed in contact with the upper surface of the base plate BP of the magnet plate MP (the surface opposite to the surface facing the electrostatic chuck C1).

[0055] In this embodiment, the temperature control member TM is divided into multiple parts and arranged. That is, multiple temperature control members TM are arranged at equal intervals on the upper surface of the base plate BP of the magnet plate MP. The temperature control member TM may be formed of a single member so that the temperature control member TM contacts almost the entire upper surface of the base plate BP. That is, the configuration of the temperature control member TM is not limited to the configuration shown in FIG. 4(a).

[0056] Here, the Peltier element is a plate-shaped element in which P-type and N-type semiconductors are arranged alternately. When a direct current is passed through a Peltier element, heat is transferred between both sides of the element, causing one side to generate heat and increase in temperature, while the other side absorbs heat and decreases in temperature. Heating and cooling can be achieved by switching the direction of the current input to this Peltier element. Generally, Peltier elements have a fast response among temperature control elements, and can be switched at high speed, allowing for highly accurate temperature control.

[0057] (Non-magnetic metal material MM) The non-magnetic metal member MM in this embodiment is a heat transfer member having a higher thermal conductivity than the electrostatic chuck C1 and the magnet plate MP. The non-magnetic metal member MM is attached to the lower surface of the base plate BP of the magnet plate MP and protrudes toward the electrostatic chuck C1. The non-magnetic metal member MM protrudes downward from the magnet MG attached to the lower surface of the base plate BP, and when the magnet plate MP descends, the tip surface of the non-magnetic metal member MM comes into contact with the upper surface 261 of the electrostatic chuck C1. A gap is formed between the magnet MG and the upper surface 261 of the electrostatic chuck C1, but the height of the magnet MG is configured so that the magnetic attraction force of the mask M is sufficiently ensured.

[0058] The magnets MG of the magnet plate MP may not be evenly arranged over the entire area of ​​the upper surface 261 of the electrostatic chuck C1, but may be arranged unevenly. Also, from the viewpoint of heat transfer, the arrangement may be such that a sufficient contact area cannot be ensured. That is, in the magnet plate MP, at least the magnets MG are members that are arranged primarily to ensure the magnetic attraction effect of the mask M. Therefore, from the viewpoint of temperature control, it is preferable to arrange a non-magnetic metal member MM that is primarily intended to ensure heat transfer, separately from the magnets MG.

[0059] (Electrostatic chuck C1) The electrostatic chuck C1 is a member that comes into contact with the substrate S, the temperature of which is to be controlled, and from the viewpoint of controlling the temperature of the substrate S, it can be regarded as a heat transfer member that transfers heat between the substrate S and the temperature control member TM. The electrostatic chuck C1 has a positive electrode 251 and a negative electrode 252 disposed in a base material 250 made of ceramic or the like. The positive electrode 251 and the negative electrode 252 are embedded in the positive electrode 251 and the negative electrode 252. The positive electrode 251 and the negative electrode 252 are connected to a power source 290, and a voltage of a desired magnitude is applied to them under the control of a control unit 270, generating an adsorption force corresponding to the magnitude of the voltage, thereby attracting the substrate S.

[0060] (Temperature control tube TP) The electrostatic chuck C1 of this embodiment has a recess 253 as a temperature control tube installation portion in which the temperature control tube TP is installed so that a part of the temperature control tube TP is buried inside. A plurality of recesses 253 are provided on an upper surface 261 (the surface opposite to an adsorption surface 260 of the electrostatic chuck C that adsorbs the substrate S) of the base material 250 of the electrostatic chuck C1, and a temperature control tube TP as a cooling means is installed in each recess 253. The substrate S is cooled via the electrostatic chuck C1 by circulating a cooling liquid as a refrigerant through the temperature control tube TP. That is, the temperature control tube TP of this embodiment is a temperature adjustment member (temperature control means) for adjusting the temperature of the substrate S, and is an element constituting the temperature adjustment unit T1.

[0061] The temperature control medium (temperature control medium) flowing through the temperature control pipe TP is not limited to liquid and may be gas. Also, the temperature control pipe TP can be used as a heating means by flowing a high-temperature fluid instead of cooling water. In other words, various liquids and gases can be used as the temperature control medium flowing through the temperature control pipe TP depending on the purpose. A known circulation mechanism such as a rotary joint having a hollow rotating shaft with a supply path and a discharge path provided therein can be used as a configuration for circulating the temperature control medium through the temperature control pipe TP.

[0062] 4(b) is a detailed view showing the configuration of the temperature control tube TP and the recess 253. The recess 253 is a groove-shaped installation portion formed along the outer circumferential surface of the temperature control tube TP, and is recessed downward from the upper surface 261 of the electrostatic chuck C1. The upper surface 261 is provided with a plurality of recesses 253 extending in the Y direction, at equal intervals in the X direction, so as to avoid the contact surface of the upper surface 261 with the non-magnetic metal member MM. Due to the recesses 253, approximately the lower half of the outer circumferential surface of the temperature control tube TP is embedded in the base material 250 of the electrostatic chuck C1.

[0063] The temperature control pipe TP is disposed in the recess 253 via a thermally conductive adhesive or grease. In the first embodiment, the temperature control pipe TP is fixed to the recess 253 by a thermally conductive adhesive 231. By providing a thermally conductive material such as the adhesive 231 between the temperature control pipe TP and the recess 253, the temperature of the electrostatic chuck C1 can be efficiently controlled. In addition, the shape and material of the temperature control pipe TP are not particularly limited, but from the viewpoint of cooling, it is preferable to use a material with high thermal conductivity. In addition, in the case of a configuration in which the mask M is attracted to the substrate S using a magnet plate MP as in the first embodiment, the temperature control pipe TP is preferably made of a non-magnetic material such as a titanium alloy or an aluminum alloy.

[0064] In order to explain the action and effect obtained by installing the temperature control tube TP in the electrostatic chuck C1 as described above, the configuration of a comparative example will be described first. FIG. 5 is a schematic cross-sectional view illustrating the configuration of the temperature control mechanism of the comparative example. The comparative example differs from Example 1 in that the electrostatic chuck C1 is not provided with the temperature control tube TP, and a cooling plate CP is provided as a temperature control member instead of the temperature control tube TP. The cooling plate CP is arranged in contact with the upper surface of the temperature control member TM (the surface opposite to the surface in contact with the magnet plate MP). That is, the temperature control member TM is arranged to be sandwiched between the magnet plate MP and the cooling plate CP in the Z-axis direction, and is configured to directly exchange heat between the magnet plate MP and the cooling plate CP.

[0065] The cooling plate CP is, for example, a plate-shaped cooling member made of stainless steel, and includes a water channel WP therein, which is a cooling pipe for flowing a coolant. The water channel WP is configured to be able to circulate cooling water as a coolant between the chamber 200 and the outside, and is capable of absorbing heat imparted to the cooling plate CP with the cooling water and discharging it to the outside. The water channel WP may be formed by a through hole provided in the cooling plate CP, or may be formed by burying a pipe inside the cooling plate CP.

[0066] In the configuration of the comparative example, heat is transferred between the cooling plate CP and the electrostatic chuck C0 via the base plate BP of the magnet plate MP and the non-magnetic metal member MM. On the other hand, in the configuration of the first embodiment, heat is transferred directly between the temperature control tube TP and the electrostatic chuck C1, so that the temperature of the electrostatic chuck C1 can be controlled more efficiently.

[0067] Also, in the case of a configuration in which a hollow portion is provided inside a member as in the comparative example, a manufacturing method is generally used in which a groove is formed in a base member, and then a lid member is attached to the base member by brazing or welding. On the other hand, in the configuration of the first embodiment, it is only necessary to form a groove in the base material 250 of the electrostatic chuck C1, so that the temperature can be efficiently adjusted with a simple configuration, and there are advantages in manufacturing difficulty and manufacturing cost. Furthermore, in the case of a configuration in which the electrostatic chuck C is not provided with a tube and the hollow portion itself is used as a flow path, there is a risk of the temperature control medium leaking (leaking) if the joining state between the base member and the lid member is poor. On the other hand, in the first embodiment, since the temperature control medium passes through the inside of the temperature control tube TP, the possibility of the temperature control medium leaking in the chamber 200 to be evacuated can be significantly reduced, and the film formation operation and temperature control can be stably performed.

[0068] In addition, in the configuration of Example 1, since there is no need to secure an adhesive surface between the base member and the cover member as in the comparative example, the arrangement interval of the temperature control pipes TP can be narrowed compared to the comparative example, and the number of flow paths can be increased to improve the temperature control efficiency.

[0069] In the first embodiment, the temperature control unit T1 is configured to have both the temperature control member TM and the temperature control pipe TP as described above, but it is not necessary to provide both members. For example, in a film formation environment or film formation device configuration that does not require high responsiveness or fine adjustment, the temperature control member TM may be eliminated and a water-cooled temperature control configuration may be provided with only the temperature control pipe TP. By eliminating the temperature control member TM (and the power supply circuit unit that controls it), cost benefits can be obtained.

[0070] (Temperature sensor TS1) The temperature sensor TS1 (first temperature detection means) is a temperature sensor that detects the temperature of the electrostatic chuck C1, is incorporated in the base material 250 of the electrostatic chuck C1, and is configured to be able to send the detected temperature to the control unit 270. As the temperature sensor TS1, for example, a thermistor, a diode, or the like can be used.

[0071] In this embodiment, the temperature of the electrostatic chuck C1 to which the substrate S is attached is constantly monitored by a temperature sensor TS1. The temperature of the substrate S rises when it receives thermal energy from deposition, and the thermal energy is transferred to the electrostatic chuck C1. The temperature of the electrostatic chuck C1 at this time is detected by the temperature sensor TS1 and fed back to the cooling operation by the temperature adjustment unit T1.

[0072] (Temperature sensor TS2) The temperature sensor TS2 (second temperature detection means) is a temperature sensor that detects the temperature of the mask M, and is provided on the side wall of the chamber 200 as shown in Fig. 2, and is configured to be able to send the detected temperature to the control unit 270. As the temperature sensor TS2, for example, a radiation thermometer that measures the temperature of the mask M from electromagnetic waves (light) emitted from the mask M can be used.

[0073] (Temperature control unit) The control unit 270 includes a current supply unit that supplies current to the Peltier element of the temperature adjustment member TM based on the power supplied from the power source 290. As a control unit in the temperature control means, the control unit 270 controls the temperature (heat exchange state) of the temperature adjustment member TM by controlling the current that the current supply unit supplies to the Peltier element of the temperature adjustment member TM. The control unit 270, together with the power source 290, may be considered to be included in the configuration of the temperature control means (temperature control unit) of the present invention.

[0074] The control unit 270 controls the temperature adjustment member TM based on the temperature detected by the temperature sensor TS1 and the temperature detected by the temperature sensor TS2. Specifically, for example, when films are formed on the substrate S across multiple film formation chambers, the temperature of the electrostatic chuck C1 provided in the current film formation chamber (first film formation chamber) is controlled to approach the temperature of the mask M provided in the next film formation chamber (second film formation chamber). At this time, the temperature of the mask M provided in the next film formation chamber (second film formation chamber) is detected using the temperature sensor TS2 provided in the chamber 200 of the next film formation chamber.

[0075] That is, the temperature of the electrostatic chuck C1 (first electrostatic chuck) in the current film formation chamber (first film formation chamber) is monitored by a temperature sensor TS1 (first temperature sensor) provided in the electrostatic chuck C1 (first electrostatic chuck) in the current film formation chamber (first film formation chamber). At the same time, the temperature of the mask M (second mask) in the next film formation chamber (second film formation chamber) is detected by a temperature sensor TS2 (second temperature sensor) provided in the next film formation chamber (second film formation chamber). Then, the current applied to the temperature adjustment member TM (first temperature adjustment member) in the current film formation chamber (first film formation chamber) is controlled so that the temperature detected by the temperature sensor TS1 (first temperature sensor) approaches the temperature detected by the temperature sensor TS2 (second temperature sensor).

[0076] Furthermore, in order to control the temperature of the electrostatic chuck C1, a medium adjustment means may be provided that can adjust the temperature and circulation speed of the temperature control medium flowing through the temperature control pipe TP by the control unit 270. For example, when there is a large difference between the temperature of the electrostatic chuck C1 provided in the current film formation chamber (first film formation chamber) and the temperature of the mask M provided in the next film formation chamber (second film formation chamber), the temperature of the temperature control medium may be lowered or the circulation speed may be increased. Such a configuration allows for more efficient temperature control.

[0077] 6 is a schematic diagram showing an example of temperature control in an organic EL production line. In an organic EL production line, it may be required to match the temperature of the substrate S with the temperature in the chamber 200 in each process or the temperature of the mask M in each process. As shown in FIG. 6, the temperature of the mask M may differ in each of the film formation clusters 1-1 to 1-6 due to differences in film formation conditions, etc. Also, as can be seen from a comparison with the temperature rise of the substrate S in the case where the temperature control of this embodiment is not performed as shown in FIG. 3, the temperature difference between the substrate S and the mask M becomes more significant, particularly in the latter half of the line.

[0078] According to this embodiment, it is possible to match the temperature of the electrostatic chuck C1, i.e., the temperature of the substrate S, to the temperature in each chamber 200 and the temperature of the mask M. That is, according to this embodiment, it is possible to control the temperature of the substrate S to match the temperature of the mask M of each of the film forming clusters 1-1 to 1-6 shown in FIG.

[0079] (Other heat transfer materials) The magnet plate MP is a member that comes into contact with the electrostatic chuck C1, and depending on the specific embodiment of the temperature adjustment unit T, it can be considered as a heat transfer member that transfers heat between the substrate S and the temperature adjustment member TM together with the electrostatic chuck C1. In other words, it can be considered to be included in the configuration of the temperature control means of the present invention.

[0080] The magnet plate MP is a magnetic force generating means composed of a base plate BP and a plurality of magnets MG. The plurality of magnets MG are attached at equal intervals to the lower surface of the base plate BP (the surface of the base plate BP facing the electrostatic chuck C1). Each magnet MG is configured as a protrusion protruding in the Z-axis direction from the lower surface of the base plate BP toward the side where the electrostatic chuck C1 is disposed, and its tip surface contacts the upper surface 261 of the electrostatic chuck C1.

[0081] The magnets MG attract the mask M toward the substrate S (in the Z-axis direction) by their magnetic force. The arrangement of the magnets MG is not particularly limited. For example, In other words, the electrostatic chucks C1 may be arranged in a biased manner rather than being evenly distributed over the entire upper surface 261 of the electrostatic chuck C1.

[0082] (Structural features of temperature control unit T1) The temperature adjustment unit T1 of this embodiment is configured to use a temperature adjustment member formed of a Peltier element or the like and a temperature adjustment tube directly installed on the electrostatic chuck C1 to control the temperature of the electrostatic chuck C1 while monitoring the temperature of the electrostatic chuck C1 and the temperature of the mask M. In addition, a non-magnetic metal member MM, which is a thermally conductive member, is brought into contact with the electrostatic chuck C1, and the temperature of the electrostatic chuck C1 is controlled via the metal member (by controlling the temperature of the metal member).

[0083] (Temperature control) The temperature control of the electrostatic chuck C1 using the temperature control unit T1 is most effective when the magnet plate MP is lowered from a position (first position) spaced apart from the electrostatic chuck C1 to a position (second position) where it comes into contact with the electrostatic chuck C1 (through the non-magnetic metal member MM). In the film formation process, the magnet plate MP is typically brought into contact with the electrostatic chuck C1 (lowered) after the aligned substrate S is placed on the mask M, that is, when the mask M is brought into close contact with the substrate S by the magnetic force of the magnet plate MP.

[0084] In the temperature adjustment unit T1, the timing and period for controlling the temperature adjustment member TM (Peltier element) is typically when the evaporation source 240 releases the film forming material, i.e., when the substrate S is exposed to the highest temperature. Even after the film formation is completed, the temperature adjustment may be continued with the magnet plate MP in contact with the electrostatic chuck C1, i.e., with the substrate S in close contact with the mask M, for example, with the shutter closed if the film formation apparatus is equipped with a shutter. Alternatively, the temperature may not be adjusted during the film formation, and the temperature adjustment may be started only after the film formation is completed, with the magnet plate MP in contact with the electrostatic chuck C1.

[0085] Also, the temperature adjustment by controlling the temperature adjustment member TM (Peltier element) may be performed at a timing other than during the film formation operation. For example, a configuration may be adopted in which the magnet plate MP is brought into contact with the electrostatic chuck C1 to control the temperature of the electrostatic chuck C1 while the substrate S is being transported before or after the film formation operation. That is, the magnet plate MP may be brought into contact with (lowered by) the electrostatic chuck C1 without attracting the mask M to the substrate S, and the temperature adjustment by controlling the temperature adjustment member TM (Peltier element) may be performed.

[0086] Furthermore, the temperature control by the temperature adjustment unit T1 is typically to cool the substrate S. However, for example, in a case where the temperature of the substrate S becomes lower than the temperature of the mask M in the film formation line shown in FIG. 5, the electrostatic chuck C1 may be heated by the operation of the Peltier element of the temperature adjustment member TM. Therefore, the temperature adjustment member TM is not limited to one using a Peltier element, and may be one using a heater constituted by an electric heating wire or the like. Also, a high-temperature medium may be flowed through the temperature adjustment pipe TP to improve the heating efficiency of the electrostatic chuck C1.

[0087] As described above, one of the purposes of the temperature control by the temperature adjustment unit T1 is to adjust the temperature of the substrate S to match the temperature of the mask M to be used in the next film formation in a series of film formation lines (multiple film formation operations across multiple film formation chambers) as shown in Fig. 5. However, the purpose of the temperature control by the temperature adjustment unit T1 is not limited to the above.

[0088] For example, depending on the characteristics of the film to be deposited on the substrate S, it may be necessary to lower or raise the temperature of the substrate S as much as possible. In the film formation chamber, the temperature of the electrostatic chuck C1 (that is, the substrate S) may be controlled by a temperature adjustment unit T1 based on the detected temperature of the electrostatic chuck C1.

[0089] In addition, the cooling or heating by the Peltier element changes the temperature of the member in contact with the temperature adjustment member TM, and further changes the temperature of another member in contact with the member in a chain reaction due to thermal conduction. That is, the temperature adjustment member TM cools the magnet plate MP, so that the non-magnetic metal member MM in contact with the magnet plate MP, the electrostatic chuck C1 in contact with the non-magnetic metal member MM, and the substrate S in contact with the electrostatic chuck C1 are sequentially cooled. Furthermore, the temperature adjustment tube TP, the electrostatic chuck C1 in contact with the temperature adjustment tube TP, and the substrate S in contact with the electrostatic chuck C1 are sequentially cooled by flowing cooling water through the temperature adjustment tube TP installed in the electrostatic chuck C1. And, naturally, the mask M in contact with the substrate S is also cooled (the temperature adjustment member TM is a temperature control means for controlling the temperature of each of the above-mentioned members).

[0090] The heat sources in the film formation chamber are the vaporized film formation material and radiant heat from the evaporation source, which mainly heat the mask M and the substrate S. The temperatures of the substrate S and the mask M ultimately change depending on the amount of heating energy and the difference in the cooling capacity via the electrostatic chuck C1, and a temperature gradient in which the temperature is higher on the side closer to the evaporation source may occur. However, when cooling is performed by the temperature adjustment unit T1 of this embodiment, the temperature rise of the mask M as well as the substrate S is suppressed compared to when cooling is not performed. In other words, although the temperature adjustment control by the temperature adjustment unit T1 of this embodiment is primarily intended to adjust (cool) the temperature of the substrate S, it can also be said to indirectly suppress the temperature rise of the mask M.

[0091] Therefore, for example, unlike the film formation line shown in FIG. 5, in a case where it is desired to control the temperatures of the masks M in each film formation chamber to the same temperature, it is also possible to utilize the temperature adjustment control by the temperature adjustment unit T1 of this embodiment.

[0092] <Example 2> A temperature adjustment unit T2 according to a second embodiment of the present invention will be described with reference to Fig. 7. Fig. 7 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the second embodiment of the present invention. Here, only differences between the configuration of the second embodiment and the configuration of the first embodiment will be described. In the configuration of the second embodiment, the same reference numerals will be used for the same parts as those in the first embodiment, and the description will be omitted.

[0093] The electrostatic chuck C2 of the second embodiment has a temperature control tube TP embedded therein. A base material 250 of the electrostatic chuck C2 has a plurality of hollow portions 254 provided therein as temperature control tube installation portions in which the temperature control tube TP is installed, instead of the recessed portion 253 of the first embodiment. The plurality of hollow portions 254 in which the temperature control tube TP is installed each extend in the horizontal direction inside the base material 250 of the electrostatic chuck C2. A thermally conductive adhesive or grease may be filled between the temperature control tube TP and the hollow portion 254.

[0094] Even in such a configuration, since the temperature control medium passes through the inside of the temperature control pipe TP, the risk of the temperature control medium leaking can be greatly reduced compared to a configuration in which the hollow portion itself is used as the flow path, and temperature control can be performed stably.

[0095] Moreover, by configuring the temperature control tube TP to be completely embedded inside the base material 250, the contact area between the temperature control tube TP and the base material 250 can be made larger than that of the configuration of Example 1. Therefore, according to the configuration of Example 2, the heat exchange rate between the temperature control tube TP and the electrostatic chuck C2 is improved, and the temperature control efficiency can be improved. That is, although the configuration of Example 2 is more difficult to manufacture than the configuration of Example 1, it is suitable for the case where it is desired to improve the temperature control efficiency by the temperature control tube TP.

[0096] (High thermal conductive sheet HT) The temperature adjustment unit T2 of the second embodiment is configured such that a highly thermally conductive sheet HT, which is a highly thermally conductive member having a higher thermal conductivity than the electrostatic chuck C2 and the magnet plate MP, is attached to a base plate BP of the magnet plate MP. Instead of providing the highly thermally conductive sheet HT, the temperature adjustment unit T2 of the second embodiment is configured such that the non-magnetic metal member MM of the temperature adjustment unit T1 of the first embodiment is eliminated.

[0097] The highly thermally conductive sheet HT (highly thermally conductive member) is a sheet-like member made of a material having a higher thermal conductivity than the electrostatic chuck C2 and the magnet plate MP. The highly thermally conductive sheet HT is disposed in contact with the upper surface 261 of the electrostatic chuck C2 (the surface opposite to the adsorption surface 260 that adsorbs the substrate S).

[0098] The highly thermally conductive sheet HT, which has a higher thermal conductivity than the electrostatic chuck C2, comes into contact with the electrostatic chuck C2, thereby making it possible to efficiently cool the electrostatic chuck C2. This cooling effect can be obtained regardless of the contact area between the highly thermally conductive sheet HT and the electrostatic chuck C2, but the larger the contact area, the greater the cooling effect.

[0099] <Example 3> A temperature adjustment unit T3 according to a third embodiment of the present invention will be described with reference to Fig. 8. Fig. 8 is a schematic cross-sectional view illustrating the configuration of a temperature adjustment mechanism according to the third embodiment of the present invention. Only differences between the configuration of the third embodiment and the configuration of the second embodiment will be described here. In the configuration of the third embodiment, the same reference numerals will be used for the same parts as those in the second embodiment, and the description thereof will be omitted.

[0100] In the temperature control unit T3 according to the third embodiment, a heat equalizing plate EP is provided on the top of the highly thermally conductive sheet HT. The heat equalizing plate EP is a temperature control pipe installation member in which the temperature control pipe TP is embedded. Inside the heat equalizing plate EP, a plurality of hollow parts 255 are provided as temperature control pipe installation parts in which the temperature control pipe TP is installed. Each of the plurality of hollow parts 255 in which the temperature control pipe TP is installed extends horizontally inside the heat equalizing plate EP. The shape of the hollow part 255 is not limited to a cylinder, but it is preferable that the shape increases the contact area between the heat equalizing plate EP and the temperature control pipe TP in order to improve the thermal conductivity. A thermally conductive adhesive or grease may be filled between the temperature control pipe TP and the hollow part 255.

[0101] The heat equalizing plate EP is fixed to the base material 250 of the electrostatic chuck C3 by a plurality of fixing screws 256, and is integrated with the base material 250 of the electrostatic chuck C3. Note that the method of fixing the heat equalizing plate EP to the electrostatic chuck C3 via the highly thermally conductive sheet HT is not limited to this, and the heat equalizing plate EP may be fixed using an adhesive or the like. The material of the heat equalizing plate EP is preferably one that has good workability for grooves and hollow portions for installing the temperature control tubes TP and has high thermal conductivity.

[0102] In the third embodiment, the temperature control pipe TP is always fixed to and integrated with the electrostatic chuck C3. Therefore, according to the configuration of the third embodiment, the temperature of the electrostatic chuck C3 can be controlled more efficiently than in the comparative example in which the cooling plate CP is arranged in contact with the upper surface of the temperature control member TM and is appropriately separated from the electrostatic chuck C0. In this way, even in a configuration in which the temperature control pipe installation portion is provided not inside the electrostatic chuck C3 but inside a member fixed to the electrostatic chuck C3 and the temperature control pipe TP is embedded in the member, the temperature of the electrostatic chuck C3 can be controlled efficiently.

[0103] Furthermore, in the configuration of Example 3, the temperature control pipe TP is disposed at a position farther away from the attraction surface 260 of the electrostatic chuck C than in the configurations of Examples 1 and 2. With this configuration, it is possible to improve the thermal uniformity on the attraction surface 260 when the temperature of the electrostatic chuck C3 is controlled by the temperature control pipe TP. Furthermore, by using a material with high thermal conductivity for the heat spreader plate EP, it is possible to improve the thermal uniformity in the heat spreader plate EP, and thus improve the thermal uniformity on the attraction surface 260 of the electrostatic chuck C3. Moreover, by selecting a material for the heat equalizing plate EP that has better workability than the material for the base material 250 of the electrostatic chuck C, an increase in processing costs can be suppressed.

[0104] In the third embodiment, the temperature control tube TP is installed in the hollow portion 255 inside the heat equalizing plate EP, but a recess may be formed on the surface of the heat equalizing plate EP and the temperature control tube TP may be installed in the recess. The temperature control tube installation member does not necessarily have to be composed of a single plate member like the heat equalizing plate EP, and may be, for example, divided into a plurality of members or composed of a member other than a plate member.

[0105] <Electronic device manufacturing method> Next, an example of a method for manufacturing an electronic device using the film forming apparatus according to this embodiment will be described. Below, the configuration of an organic EL display device will be shown as an example of the electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0106] First, the organic EL display device to be manufactured will be described. Fig. 9(a) is an overall view of an organic EL display device 700, and Fig. 9(b) shows the cross-sectional structure of one pixel.

[0107] As shown in FIG. 9(a), a plurality of pixels 702 each including a plurality of light-emitting elements are arranged in a matrix in a display region 701 of an organic EL display device 700. Although details will be described later, each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel here refers to the smallest unit that allows a desired color to be displayed in the display region 701. In the case of the organic EL display device according to this embodiment, the pixel 702 is configured by a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B that emit light different from each other. The pixel 702 is often configured by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color.

[0108] Fig. 9(b) is a schematic partial cross-sectional view taken along line BB in Fig. 9(a). The pixel 702 is made up of a plurality of light-emitting elements, and each light-emitting element has a first electrode (anode) 704, a hole transport layer 705, one of the light-emitting layers 706R, 706G, and 706B, an electron transport layer 707, and a second electrode (cathode) 708 on a substrate 703. Among these, the hole transport layer 705, the light-emitting layers 706R, 706G, and 706B, and the electron transport layer 707 correspond to organic layers. In this embodiment, the light-emitting layer 706R is an organic EL layer that emits red light, the light-emitting layer 706G is an organic EL layer that emits green light, and the light-emitting layer 706B is an organic EL layer that emits blue light. The light-emitting layers 706R, 706G, and 706B are formed in patterns corresponding to the light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively.

[0109] The first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, the electron transport layer 707, and the second electrode 708 may be formed in common for the plurality of light-emitting elements 702R, 702G, and 702B, or may be formed for each light-emitting element. In order to prevent the first electrode 704 and the second electrode 708 from being shorted by foreign matter, an insulating layer 709 is provided between the first electrodes 704. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 710 is provided to protect the organic EL element from moisture and oxygen.

[0110] 9(b), the hole transport layer 705 and the electron transport layer 707 are shown as single layers, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 704 to the hole transport layer 705 can be formed between the first electrode 704 and the hole transport layer 705. Similarly, an electron injection layer can be formed between the second electrode 708 and the electron transport layer 707.

[0111] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0112] First, a circuit (not shown) for driving the organic EL display device and a substrate (mother glass) 703 on which a first electrode 704 is formed are prepared.

[0113] An acrylic resin is formed by spin coating on the substrate 703 on which the first electrode 704 is formed, and the acrylic resin is patterned by lithography so as to form an opening in the portion where the first electrode 704 is formed, forming an insulating layer 709. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0114] The substrate 703 with the patterned insulating layer 709 is placed on a substrate carrier on which an adhesive member is arranged. The substrate 703 is held by the adhesive member. The substrate is then carried into a first organic material deposition apparatus, and after inversion, a hole transport layer 705 is deposited as a common layer on the first electrode 704 in the display area. The hole transport layer 705 is deposited by vacuum deposition. In practice, the hole transport layer 705 is formed to be larger than the display area 701, so no high-resolution mask is required.

[0115] Next, the substrate 703 on which the hole transport layer 705 has been formed is carried into a second organic material film forming apparatus. The substrate and a mask are aligned, and the substrate is placed on the mask. A red light emitting layer 706R is formed on the portion of the substrate 703 where the red light emitting element is to be disposed.

[0116] Similar to the formation of the light-emitting layer 706R, a light-emitting layer 706G that emits green light is formed by a third organic material film formation apparatus, and further a light-emitting layer 706B that emits blue light is formed by a fourth organic material film formation apparatus. After the formation of the light-emitting layers 706R, 706G, and 706B is completed, an electron transport layer 707 is formed over the entire display area 701 by a fifth film formation apparatus. The electron transport layer 707 is formed as a layer common to the three light-emitting layers 706R, 706G, and 706B.

[0117] The substrate on which the electron transport layer 707 has been formed is moved in a metallic evaporation material deposition device, and a second electrode 708 is deposited.

[0118] Thereafter, the substrate is transferred to a plasma CVD apparatus, where a protective layer 710 is formed, completing the film formation process on the substrate 703. After inversion, the adhesive member is peeled off from the substrate 703, thereby separating the substrate 703 from the substrate carrier. Then, the organic EL display device 700 is completed through cutting.

[0119] If the substrate 703 on which the insulating layer 709 is patterned is exposed to an atmosphere containing moisture or oxygen from the time when it is carried into the film forming apparatus until the film formation of the protective layer 710 is completed, the light emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere. [Explanation of symbols]

[0120] 1...film forming apparatus, S...substrate, C...electrostatic chuck, TM...temperature control member, MP...magnet plate, TP...temperature control tube

Claims

1. A substrate holding device used in a film deposition apparatus for depositing films on a substrate, An electrostatic chuck that holds the substrate, A temperature control tube through which a temperature control medium flows for adjusting the temperature of the electrostatic chuck, Equipped with, The substrate holding device is characterized in that the electrostatic chuck has a temperature control tube mounting section in which the temperature control tube is installed such that at least a portion of the temperature control tube is embedded inside the electrostatic chuck.

2. The electrostatic chuck comprises a base material and electrodes embedded in the base material. The substrate holding device according to claim 1, characterized in that the temperature control tube installation portion is formed on the substrate.

3. The substrate holding device according to claim 2, characterized in that the temperature control tube mounting portion is a recess formed on the surface of the electrostatic chuck opposite to the suction surface that adsorbs the substrate.

4. The substrate holding device according to claim 2, characterized in that the temperature control tube installation section is a hollow section formed inside the electrostatic chuck.

5. The substrate holding device according to claim 2, characterized in that the thermal conductivity of the temperature control tube is higher than the thermal conductivity of the substrate.

6. The substrate holding device according to claim 1, characterized in that a heat conductive material is filled between the temperature control tube and the temperature control tube installation section.

7. A substrate holding device used in a film deposition apparatus for depositing films on a substrate, An electrostatic chuck that holds the substrate, A temperature control tube through which a temperature control medium flows for adjusting the temperature of the electrostatic chuck, A temperature control tube mounting member is fixed to the side of the electrostatic chuck opposite to the suction surface that adsorbs the substrate, and in which at least a portion of the temperature control tube is embedded. A substrate holding device characterized by comprising the following:

8. The substrate holding device according to claim 7, further comprising a heat conductive sheet provided between the electrostatic chuck and the temperature control tube mounting member.

9. The substrate holding device according to claim 7, characterized in that the temperature control tube is fixed to the electrostatic chuck by a plurality of fixing screws.

10. The substrate holding device according to claim 7, characterized in that the temperature control tube is installed in a recess formed on the surface of the temperature control tube mounting member.

11. The substrate holding device according to claim 7, characterized in that the temperature control tube is installed in a hollow portion formed inside the temperature control tube mounting member.

12. The substrate holding device according to claim 7, characterized in that a heat conductive material is filled between the temperature control tube and the temperature control tube mounting member.

13. The substrate holding device according to claim 6 or 12, characterized in that the thermal conductive material is an adhesive or grease.

14. The substrate holding device according to claim 1 or 7, characterized in that the temperature control medium is a coolant.

15. The substrate holding device according to claim 1 or 7, characterized in that it is provided with a circulation mechanism for circulating the temperature control medium in the temperature control tube.

16. The substrate holding device according to claim 15, further comprising a medium adjustment means for adjusting at least one of the temperature and circulation speed of the temperature control medium flowing through the temperature control tube.

17. The system includes a magnetic force generating means that generates a magnetic force to attract the mask toward the substrate adsorbed to the electrostatic chuck, The substrate holding device according to claim 1 or 7, characterized in that the temperature control tube is made of a non-magnetic material.

18. The substrate holding device according to claim 1 or 7, further comprising a temperature control member equipped with a Peltier element for controlling the temperature of the electrostatic chuck.

19. Chamber and, An evaporation source provided in the chamber, A substrate holding device according to any one of claims 1 to 12, A mask that is bonded to the film-forming surface of a substrate that is adsorbed onto the electrostatic chuck of the substrate holding device, A film deposition apparatus characterized by comprising the following features.

20. A film formation step comprising forming a film on a substrate using the film formation apparatus described in Claim 19, A method for manufacturing an electronic device characterized by the following:

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