Post dry etch photoresist and metal-containing residue removal formulation

Abstract

The disclosed and claimed subject matter relates to stripping compositions having controlled oxide etching and ITO (indium tin oxide) etching capabilities as well as sidewall polymer and polymer etch residue removal capabilities, and methods of stripping and etching using the compositions.

Description

[Technical field]

[0001] Technical Field

[0002] The subject matter disclosed and claimed herein relates to stripping compositions having controlled oxide etching and ITO (indium tin oxide) etching, as well as sidewall polymer and polymer etch residue removal capabilities, and stripping and etching processes using such compositions. [Background technology]

[0003] Prior Art

[0004] During manufacturing in the microelectronics field, a thin photoresist film acts as a mask that is applied to a substrate material to form a pattern for subsequent manufacturing processes. The resist pattern can be formed by other photolithographic steps. Usually, when the resist film is used as a mask, a dry etching process is then followed to etch other materials under the photoresist mask. For example, an etching gas can selectively attack the unprotected areas of the substrate that are not covered by the photoresist. During the plasma etching process, by-products related to the photoresist and the exposed material are deposited on the exposed photoresist and substrate as post-etch residues.

[0005] Post-etch residues may contain different materials depending on the substrate exposed during the plasma etching process. For example, aluminum and titanium-containing residues may result from aluminum patterned substrates, and silicon-containing materials may result from via patterned structures made from silicon oxide materials. All of these post-etch residues must be thoroughly cleaned before further processing to ensure the quality of the final product.

[0006] Indium Tin Oxide (ITO) is one of the widely used transparent conductive oxides due to its electrical conductivity and optical transparency. Indium Tin Oxide (ITO) is easily deposited as a thin film on glass, PET, and other substrates for a variety of applications, such as flat panel displays, polymer-based electronics, thin film photovoltaic devices, LCD and LED displays, and OLED displays. ITO thin films can be deposited on substrate surfaces by physical vapor deposition, such as various sputtering techniques.

[0007] Patterning of ITO substrates has become more important in advanced packaging technology where an ITO layer is deposited on a silicon oxide substrate. A positive photoresist is usually used in the patterning process of ITO substrates. After the patterning process, a plasma etching process is then performed to remove the specific exposed material. The positive photoresist needs to be subsequently completely or partially removed, usually by wet chemical processing.

[0008] Many photoresist strippers and residue removers have been proposed to completely or partially remove photoresist films. However, in the ITO patterning process, conventional photoresist as well as post-etch residues are difficult to remove and clean due to the formation of metal-containing by-products on the photoresist and metal sidewall surfaces. Also, the photoresist surface becomes harder as a protective layer during the dry etching process, preventing effective removal. As a result, commonly used alkanolamine solvent-based solutions cannot effectively and / or efficiently dissolve the photoresist film.

[0009] Furthermore, many photoresist strippers and post-etch cleaning solutions contain environmentally unfriendly organic solvents, such as N-methyl-2-pyrrolidone (NMP) and dimethylsulfoxide (DMSO), and dimethylacetamide (DMAC). Replacing these organic solvents with more environmentally friendly solvents is needed to develop new photoresist strippers and post-etch cleaning solutions. Summary of the Invention [Problem to be solved by the invention]

[0010] Therefore, there is a need to develop a new eco-friendly chemical that does not contain NMP or DMAC, which effectively dissolves the photoresist layer by breaking through the protective layer formed by the photoresist and the post-etch residue on the ITO metal sidewall. Moreover, the chemical is also required to be compatible with the exposed ITO and Si2 materials. The chemical is also required to effectively clean the post-etch residue with compatibility with the exposed materials. [Means for solving the problem]

[0011] The presently disclosed and claimed subject matter provides aqueous acidic stripping and cleaning compositions for the removal of organic materials, organometallic residues, organosilicon residues, sidewall polymers (SWPs) and inorganic residues with controlled silicon oxide and ITO etch rates, the cleaning compositions comprising, consisting essentially of, or consisting of: (i) a polyoxyethylene (PO4) compound; (i) about 1% by weight to about 10% by weight of one or more polyhydric alcohols; (ii) about 50% to about 80% by weight of (iia) one or more organic water-soluble glycol ether solvents or (iib) one or more amides selected from diethylformamide (DEF), N-methylformamide, N-ethylformamide, N,N-dimethylacetamide, and N,N-dimethylpropionamide; (iii) about 0.1% to about 0.5% by weight of a fluoride ion source comprising one or more of pure ammonium fluoride and pure HF; (iv) about 1% to about 10% by weight of one or more buffering agents. (v) about 10% by mass to about 40% by mass of water, (vi) Optionally, one or more corrosion inhibitors. In one embodiment, the cleaning composition has a pH greater than about 3 and less than about 9. In one aspect of this embodiment, the cleaning composition has a pH greater than about 3 and less than about 6. In another embodiment, the cleaning composition has a pH greater than about 4 and less than about 6. In another embodiment, the cleaning composition has a pH greater than about 4 and less than about 7. In one embodiment, ammonium fluoride is provided as a 40% solution in water.

[0012] The compositions disclosed and claimed herein are suitable for cleaning post-etch residues and for at least partially removing photoresist films and photoresist films present on surfaces of ITO and silicon oxide, with compatibility with the ITO and silicon oxide.

[0013] In one embodiment, the compositions disclosed and claimed herein do not include NMP, dimethylsulfoxide (DMSO), dimethylacetamide (DMAC), N-methylpyrrolidone (NMP), gamma butyrolactone, urea, hydrogen peroxide, etc. In another embodiment, the compositions disclosed and claimed herein do not include, or alternatively include, an amidoxime compound. In another embodiment, the compositions disclosed and claimed herein do not include, or alternatively include, hydroxylamine and its derivatives. In another embodiment, the compositions disclosed and claimed herein do not include, or alternatively include, a metal-containing compound. In another embodiment, the compositions disclosed and claimed herein do not include, or alternatively include, a corrosion inhibitor.

[0014] Among other things, the compositions disclosed and claimed herein provide controlled etching and sidewall polymer removal capabilities.

[0015] Additionally, the compositions disclosed and claimed herein are compatible with exposed substrates, such as aluminum and titanium, and provide good cleaning performance to thoroughly clean Al and Ti metal-containing and silicon-containing post-etch residues.

[0016] The subject matter disclosed and claimed herein further includes methods for stripping that provide controlled silicon oxide and ITO etching using the compositions disclosed and claimed herein.

[0017] This Summary section is not intended to identify all aspects and / or additional novel aspects of the subject matter disclosed and claimed herein. Instead, this Summary merely provides a preliminary discussion of the distinct aspects and corresponding novel points over conventional and known techniques. For further details and / or a possible complete overview of the subject matter and aspects disclosed and claimed herein, the reader is directed to the Detailed Description section and corresponding drawings of this disclosure, as further discussed below.

[0018] The order of discussion of the different steps described herein is presented for clarity. In general, the steps disclosed herein can be performed in any suitable order. Moreover, although each of the different features, techniques, configurations, etc. disclosed herein may be discussed in different places in this disclosure, it is intended that each of these concepts can be performed independently of each other or in combination with each other as appropriate. Thus, the subject matter disclosed and claimed can be embodied and viewed in many different ways.

[0019] The section headings used herein are for organizational purposes and should not be construed as limiting the subject matter described. All documents, or portions of documents, cited in this application, including but not limited to patents, patent applications, articles, books, and papers, are hereby incorporated by reference in their entirety for any purpose. In the event that any of the documents and similar materials incorporated herein defines a term in a manner that contradicts the definition of that term in this application, this application controls. [Brief description of the drawings]

[0020] The accompanying drawings are included to provide a further understanding of the disclosed subject matter, and are incorporated in and constitute a part of this specification, serving to illustrate aspects of the disclosed subject matter and to explain the principles of the disclosed subject matter.

[0021] [Figure 1] FIG. 1 illustrates an embodiment of a cleaning process for a patterned ITO surface of the disclosed and claimed subject matter. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] All references cited herein, including, for example, publications, patent applications, and patents, are hereby incorporated by reference to the same extent as if each reference was individually and specifically incorporated by reference herein and was set forth in its entirety.

[0023] The following detailed description provides only preferred exemplary embodiments and is not intended to limit the scope, applicability, or configuration of the disclosed and claimed subject matter. Rather, the following detailed description of preferred exemplary embodiments provides one of ordinary skill in the art with an enabling description for practicing preferred exemplary embodiments of the disclosed and claimed subject matter. Various changes can be made in the function and arrangement of elements without departing from the spirit and scope of the disclosed and claimed subject matter, as defined in the appended claims.

[0024] The use of the terms "a" and "an" and "the" and similar referents in the context of describing the disclosed and claimed subject matter (particularly in the context of the claims that follow) should be understood to encompass both the singular and the plural, unless otherwise stated herein or clearly contradicted by context.

[0025] As used herein and in the claims, the terms "comprising," "comprises," "including," and "includes" are inclusive or open-ended and do not exclude additional, unrecited elements, compositional components, or method steps. Thus, these terms encompass the more restrictive terms "consisting essentially of" and "consisting of." Unless otherwise specified, all values ​​given herein are up to and including the stated endpoints and values ​​for compositional components or ingredients are expressed as the weight percent of the respective component in the composition.

[0026] In a composition "consisting essentially of" a listed component, such component can be added up to 100% by weight of the composition, or can be added up to less than 100% by weight. When such components are added up to less than 100% by weight, such components can contain some small amount of non-essential contaminants or impurities. For example, in one such embodiment, the cleaning composition can contain 2% or less by weight of impurities. In another embodiment, the cleaning composition can contain 1% or less by weight of impurities. In a further embodiment, the cleaning composition can contain 0.05% or less by weight of impurities. In other such embodiments, the components can form at least 90% by weight, more preferably at least 95% by weight, more preferably at least 99% by weight, more preferably at least 99.5% by weight, and most preferably at least 99.9% by weight, and can contain other components that do not substantially affect the performance of the cleaning composition. Alternatively, it is understood that all essential components are added essentially up to 100% by weight when there are no significant non-essential impurity components.

[0027] In some aspects, the disclosed and claimed subject matter does not include an amidoxime compound. In some aspects, the disclosed and claimed subject matter does not include a metal-containing compound.

[0028] All methods described herein can be performed in any suitable order unless otherwise indicated or clearly contradicted by context. Any and all examples or example language (e.g., "for example") provided herein are intended only to better clarify the disclosed and claimed subject matter and do not impose limitations on the scope of the disclosed and claimed subject matter unless otherwise indicated. No language in the specification should be construed as indicating any claimed element as essential to the practice of the disclosed and claimed subject matter.

[0029] Preferred embodiments of the subject matter disclosed and claimed herein are described herein, including the best mode known to the inventors for carrying out the disclosed and claimed subject matter. Modifications of those preferred embodiments will become apparent to those of skill in the art upon reading the foregoing description. The inventors contemplate that such modifications may be employed by those of skill in the art as appropriate, and the inventors intend for the disclosed and claimed subject matter to be practiced otherwise than as specifically described herein. Accordingly, this disclosed and claimed subject matter includes all modifications and equivalents of the subject matter recited in the claims appended hereto as permitted by applicable law. Moreover, all possible combinations of the above-described elements in all possible variations thereof are encompassed by the disclosed and claimed subject matter unless otherwise indicated or clearly contradicted by context.

[0030] The disclosed and claimed subject matter relates generally to compositions useful for the selective removal of titanium nitride and molybdenum metal from microelectronic devices having such materials thereon during their fabrication. The compositions disclosed herein are capable of removing both titanium nitride and molybdenum metal at rates that can be varied based on particular needs.

[0031] For ease of reference, "microelectronic device" corresponds to semiconductor substrates, flat panel displays, phase change memory devices, solar panels, and other products, such as solar cell devices, photovoltaic devices, microelectronic mechanical systems (MEMS), manufactured for use in microelectronics, integrated circuit, energy integration, and computer chip applications. It is understood that the terms "microelectronic device," "microelectronic substrate," and "microelectronic device structure" are not meant to be limiting in any way, but rather include any substrate or structure that ultimately becomes a microelectronic device or microelectronic assembly. The microelectronic device can be a patterned, blanketed, controlled device, and / or test device.

[0032] "Low-k dielectric materials" as defined herein correspond to any material used as a dielectric material in layered microelectronic devices, which material has a dielectric constant less than about 3.5. Preferably, the low-k dielectric materials include low polar materials such as silicon-containing organic polymers, silicon-containing hybrid organic / inorganic materials, organosilicate glass (OSG), TEOS, fluorosilicate glass (FSG), silicon dioxide, and carbon-doped oxide (CDO) glass. It should be understood that low-k materials can have different densities and different porosities.

[0033] "Substantially free" is defined herein as less than 2% by weight, preferably less than 1% by weight, more preferably less than 0.5% by weight, and most preferably less than 0.1% by weight. "Substantially free" also includes 0.0% by weight. The term "free" means 0.0% by weight, as measured normally in the art.

[0034] As used herein, "about" or "approximately" is intended to correspond to ±5% of the stated value.

[0035] "Photoresist etch residue," as defined herein, corresponds to any residue that includes photoresist material or materials that are by-products of an etching or ashing process, as will be readily understood by one of ordinary skill in the art.

[0036] As used herein, a "fluoride" species corresponds to a species that contains ionic fluoride (F) or covalently bound fluorine. The fluoride species can be included as a fluoride species or can be generated in situ.

[0037] The compositions of the disclosed and claimed subject matter can be embodied in a wide variety of specific formulations, as described in more detail below.

[0038] In all such compositions where particular components of the composition are discussed in terms of weight percent including a zero lower limit, it is to be understood that such components may or may not be present in various particular embodiments of the composition, and that in instances where such components are present, they may be present in concentrations up to 0.001 weight percent, based on the total weight of the composition in which such component is used.

[0039] Furthermore, it will be apparent to those skilled in the art that various modifications may be made to how the disclosed subject matter is implemented based on the embodiments described herein without departing from the spirit and scope of the disclosed subject matter disclosed herein.

[0040] As explained above, the disclosed subject matter relates to cleaning compositions suitable for partially removing photoresist films and cleaning post-etch residues while being compatible with ITO and SiO2.

[0041] In one embodiment, the cleaning composition comprises: (i) a water-soluble polymeric compound; (i) about 1% by weight to about 10% by weight of one or more polyhydric alcohols; (ii) about 50% to about 80% by weight of (iia) one or more organic water-soluble glycol ether solvents, or (iib) one or more amides selected from diethylformamide (DEF), N-methylformamide, N-ethylformamide, and N,N-dimethylacetamide, N,N-dimethylpropionamide; (iii) about 0.1% to about 0.5% by weight of a fluoride ion source comprising one or more of pure ammonium fluoride and pure HF; (iv) about 1% to about 10% by weight of one or more buffering agents. (v) about 10% to about 40% by weight of water, and (vi) Optionally, one or more corrosion inhibitors. In one aspect of this embodiment, the cleaning composition includes (iia) one or more organic water-soluble glycol ether solvents. In one aspect of this embodiment, the cleaning composition includes (iib) one or more amides selected from diethylformamide (DEF), N-methylformamide, N-ethylformamide, N,N-dimethylacetamide, and N,N-dimethylpropionamide. In one aspect of this embodiment, the cleaning composition includes (iib) one or more amides including diethylformamide (DEF). In one aspect of this embodiment, the cleaning composition includes (vi) one or more corrosion inhibitors. In one aspect of this embodiment, the cleaning composition has a pH greater than about 3 and less than about 9. In one aspect of this embodiment, the cleaning composition has a pH greater than about 3 and less than about 6. In one aspect of this embodiment, the cleaning composition has a pH greater than about 4 and less than about 6. In one aspect of this embodiment, the cleaning composition has a pH greater than about 4 and less than about 7.

[0042] In one embodiment, the cleaning composition consists essentially of: (i) a water-soluble glycerin-based component; (i) about 1% by weight to about 10% by weight of one or more polyhydric alcohols; (ii) about 50% to about 80% by weight of (iia) one or more organic water-soluble glycol ether solvents, or (iib) one or more amides selected from diethylformamide (DEF), N-methylformamide, N-ethylformamide, N,N-dimethylacetamide, and N,N-dimethylpropionamide; (iii) about 0.1% to about 0.5% by weight of a fluoride ion source comprising one or more of pure ammonium fluoride and pure HF; (iv) about 1% to about 10% by weight of one or more buffering agents. (v) about 10% to about 40% by weight of water, and (vi) Optionally, one or more corrosion inhibitors. In one aspect of this embodiment, the cleaning composition includes (iia) one or more organic water-soluble glycol ether solvents. In one aspect of this embodiment, the cleaning composition includes (iib) one or more amides selected from diethylformamide (DEF), N-methylformamide, N-ethylformamide, N,N-dimethylacetamide, and N,N-dimethylpropionamide. In one aspect of this embodiment, the cleaning composition includes (iib) one or more amides including diethylformamide (DEF). In one aspect of this embodiment, the cleaning composition includes (vi) one or more corrosion inhibitors. In one aspect of this embodiment, the cleaning composition has a pH greater than about 3 and less than about 9. In one aspect of this embodiment, the cleaning composition has a pH greater than about 3 and less than about 6. In one aspect of this embodiment, the cleaning composition has a pH greater than about 4 and less than about 6. In one aspect of this embodiment, the cleaning composition has a pH greater than about 4 and less than about 7.

[0043] In one embodiment, the cleaning composition comprises: (i) a water-soluble polymeric component; (i) about 1% by weight to about 10% by weight of one or more polyhydric alcohols; (ii) about 50% to about 80% by weight of (iia) one or more organic water-soluble glycol ether solvents, or (iib) one or more amides selected from diethylformamide (DEF), N-methylformamide, N-ethylformamide, N,N-dimethylacetamide, and N,N-dimethylpropionamide; (iii) about 0.1% to about 0.5% by weight of a fluoride ion source comprising one or more of pure ammonium fluoride and pure HF; (iv) about 1% to about 10% by weight of one or more buffering agents. (v) about 10% to about 40% by weight of water, and (vi) Optionally, one or more corrosion inhibitors. In one aspect of this embodiment, the cleaning composition includes (iia) one or more organic water-soluble glycol ether solvents. In one aspect of this embodiment, the cleaning composition includes (iib) one or more amides selected from diethylformamide (DEF), N-methylformamide, N-ethylformamide, N,N-dimethylacetamide, and N,N-dimethylpropionamide. In one aspect of this embodiment, the cleaning composition includes (iib) one or more amides including diethylformamide (DEF). In one aspect of this embodiment, the cleaning composition includes (vi) one or more corrosion inhibitors. In one aspect of this embodiment, the cleaning composition has a pH greater than about 3 and less than about 9. In one aspect of this embodiment, the cleaning composition has a pH greater than about 3 and less than about 6. In one aspect of this embodiment, the cleaning composition has a pH greater than about 4 and less than about 6. In one aspect of this embodiment, the cleaning composition has a pH greater than about 4 and less than about 7.

[0044] In other embodiments, the cleaning compositions disclosed herein are substantially free of, or free of, at least one of 4-methylmorpholine N-oxide, trimethylamine N-oxide, peracetic acid, urea, hydrogen peroxide, amidoxime compounds, hydroxylamine, hydroxylamine derivatives, and metal-containing compounds. In one aspect of this embodiment, the cleaning compositions disclosed herein are substantially free of, or free of, all of 4-methylmorpholine N-oxide, trimethylamine N-oxide, peracetic acid, urea, hydrogen peroxide, amidoxime compounds, and metal-containing compounds.

[0045] Ingredients of the composition

[0046] (i) Polyhydric alcohol

[0047] As noted above, the disclosed and claimed cleaning compositions include (i) one or more polyhydric alcohols. As used herein, "polyhydric alcohol" means a compound that contains at least two hydroxyl groups. The polyhydric alcohols used in the present invention are preferably di- or tri-alcohols, such as (C2-C 20 ) alkanediols and (C3-C 20 ) alkanetriols, cyclic alcohols and substituted alcohols. Exemplary polyhydric alcohols include, but are not limited to, glycerol, ethylene glycol, propylene glycol (PG), diethylene glycol, dipropylene glycol, hexylene glycol, 1,2-butanediol, 1,4-butanediol, and 2,3-butanediol. Preferred polyhydric alcohols include ethylene glycol, propylene glycol, glycerol, and combinations thereof.

[0048] In some embodiments, (i) the one or more polyhydric alcohols in the disclosed and claimed compositions can be in a range having a starting point and an ending point selected from the following list of weight percents: about 1, about 1.5, about 2, about 2.5, about 3, about 3.5, about 4, about 4.5, about 5, about 5.5, about 6, about 6.5, about 7, about 7.5, about 8, about 8.5, about 9, about 9.5, and about 10. In other embodiments, (i) the one or more polyhydric alcohols in the disclosed and claimed compositions are from about 1% to about 10% by weight. In other embodiments, (i) the one or more polyhydric alcohols in the disclosed and claimed compositions are from about 1% to about 5% by weight. In other embodiments, (i) the one or more polyhydric alcohols in the disclosed and claimed compositions are from about 1% to about 7% by weight. In another embodiment, (i) the one or more polyhydric alcohols in the disclosed and claimed compositions are from about 5% to about 10% by weight. In another embodiment, (i) the one or more polyhydric alcohols in the disclosed and claimed compositions are from about 3% to about 7% by weight. In another embodiment, (i) the one or more polyhydric alcohols in the disclosed and claimed compositions are from about 4% to about 6% by weight.

[0049] (iia) glycol ether solvent

[0050] As noted above, some embodiments of the disclosed and claimed cleaning compositions include (ii) one or more organic water-soluble glycol ether solvents. Examples of glycol ethers include butyl diglycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether (BDG), diethylene glycol monoisobutyl ether, diethylene glycol monobenzyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, triethylene glycol monomethyl ether, triethylene glycol dimethyl ether, polyethylene glycol monomethyl ether, diethylene glycol methylethyl ether, and the like. ether, triethylene glycol ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol methyl ether acetate, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol monobutyl ether, propylene glycol, monopropyl ether, dipropylene glycol monomethyl ether (DPM), dipropylene glycol monopropyl ether, dipropylene glycol monoisopropyl ether, dipropylene monobutyl ether, dipropylene glycol diisopropyl ether, tripropylene glycol monomethyl ether, 1-methoxy-2-butanol, 2-methoxy-1-butanol, 2-methoxy-2-methylbutanol, 1,1-dimethoxyethane, and 2-(2-butoxyethoxy)ethanol. Preferred glycol ether solvents include diethylene glycol butyl ether (BDG).

[0051] In some embodiments, the amount of (ii) one or more organic water-soluble glycol ether solvents in the disclosed and claimed compositions can be a range having a starting point and an ending point selected from the following list of weight percents: 50, 55, 59.5, 60, 65, 70, 75, and 80. In other embodiments, the amount of (ii) one or more organic water-soluble glycol ether solvents in the disclosed and claimed compositions is from about 50% to about 80% by weight. In other embodiments, the amount of (ii) one or more organic water-soluble glycol ether solvents in the disclosed and claimed compositions is from about 50% to about 70% by weight. In other embodiments, the amount of (ii) one or more organic water-soluble glycol ether solvents in the disclosed and claimed compositions is from about 50% to about 60% by weight.

[0052] In one embodiment, (ii) the one or more organic water soluble glycol ether solvents comprise diethylene glycol butyl ether (BDG).

[0053] In one embodiment, (ii) the one or more organic water soluble glycol ether solvents consist essentially of diethylene glycol butyl ether (BDG).

[0054] In one embodiment, (ii) the one or more organic water-soluble glycol ether solvents comprise diethylene glycol butyl ether (BDG). In a further embodiment of this embodiment, (ii) the one or more organic water-soluble glycol ether solvents comprise about 50% to about 60% by weight of diethylene glycol butyl ether (BDG). In a further embodiment of this embodiment, (ii) the one or more organic water-soluble glycol ether solvents comprise about 54% by weight of diethylene glycol butyl ether (BDG). In a further embodiment of this embodiment, (ii) the one or more organic water-soluble glycol ether solvents comprise about 59% by weight of diethylene glycol butyl ether (BDG). In a further embodiment of this embodiment, (ii) the one or more organic water-soluble glycol ether solvents comprise about 53.9% by weight of diethylene glycol butyl ether (BDG). In a further embodiment of this embodiment, (ii) the one or more organic water-soluble glycol ether solvents comprise about 58.9% by weight of diethylene glycol butyl ether (BDG).

[0055] (iib) Amide

[0056] As noted above, in some embodiments, the disclosed and claimed compositions include (iib) one or more amides selected from diethylformamide, N-methylformamide, N-ethylformamide, N,N-dimethylacetamide, and N,N-dimethylpropionamide.

[0057] In some embodiments, the cleaning composition comprises one or more amides including (iib) diethylformamide (DEF). In one of those embodiments, the composition comprises about 50% to about 60% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 55% to about 60% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 58% to about 60% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 58% to about 59% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 51% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 52% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 53% by weight (iib) diethylformamide. In one of those embodiments, the composition comprises about 54% by weight (iib) diethylformamide. In one of those embodiments, the composition comprises about 55% by weight (iib) diethylformamide. In one of those embodiments, the composition comprises about 56% by weight (iib) diethylformamide. In one of those embodiments, the composition comprises about 57% by weight (iib) diethylformamide. In one of those embodiments, the composition comprises about 58% by weight (iib) diethylformamide. In one of those embodiments, the composition comprises about 58.1% by weight (iib) diethylformamide. In one of those embodiments, the composition comprises about 58.2% by weight (iib) diethylformamide. In one of those embodiments, the composition comprises about 58.3% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 58.4% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 58.5% by weight of (iib) diethylformamide.In one of those embodiments, the composition comprises about 58.6% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 58.7% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 58.8% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 58.9% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 59% by weight of (iib) diethylformamide. In one of those embodiments, the composition comprises about 60% by weight of (iib) diethylformamide.

[0058] In some embodiments, the cleaning composition comprises one or more amides including (iib) N-methylformamide. In one of those embodiments, the composition comprises about 50% to about 60% by weight of (iib) N-methylformamide. In one of those embodiments, the composition comprises about 55% to about 60% by weight of (iib) N-methylformamide.

[0059] In some embodiments, the cleaning composition comprises one or more amides including (iib) N-ethylformamide. In one of those embodiments, the composition comprises about 50% to about 60% by weight of (iib) N-ethylformamide. In one of those embodiments, the composition comprises about 55% to about 60% by weight of (iib) N-ethylformamide.

[0060] In some embodiments, the cleaning composition comprises one or more amides including (iib) N,N-dimethylacetamide. In one of those embodiments, the composition comprises about 50% to about 60% by weight of (iib) N,N-dimethylacetamide. In one of those embodiments, the composition comprises about 55% to about 60% by weight of (iib) N,N-dimethylacetamide.

[0061] In some embodiments, the cleaning composition comprises one or more amides including (iib) N,N-dimethylpropionamide. In one of those embodiments, the composition comprises about 50% to about 60% by weight of (iib) N,N-dimethylpropionamide. In one of those embodiments, the composition comprises about 55% to about 60% by weight of (iib) N,N-dimethylpropionamide.

[0062] (iii) A source of fluoride ions

[0063] As noted above, the disclosed and claimed cleaning compositions include (iii) a fluoride source comprising one or more of pure ammonium fluoride and pure HF. The fluoride ions function primarily to assist in the removal of photoresist and post-etch residues. Exemplary compounds that provide a fluoride ion source according to the disclosed and claimed subject matter include hydrofluoric acid, ammonium fluoride, quaternary ammonium fluorides, fluoroborates, fluoroboric acid, tetrabutylammonium tetrafluoroborate, aluminum hexafluoride, and fluoride salts of aliphatic primary, secondary, or tertiary amines having the formula: R 1 NR 2 R 3 R 4 F In the formula, R 1 , R 2 , R 3 and R 4 each independently represents H or a (C1-C4) alkyl group. Typically, R 1 , R 2 , R 3 and R 4 The total number of carbon atoms in the group is not more than 12 carbon atoms. Examples of fluoride salts of aliphatic primary, secondary or tertiary amines are, for example, tetramethylammonium fluoride, tetraethylammonium fluoride, methyltriethylammonium fluoride, and tetrabutylammonium fluoride.

[0064] In selecting a fluoride ion source, consideration must be given to whether the source will adversely affect the surface being cleaned. For example, in cleaning semiconductor devices, the presence of sodium or calcium in the cleaning solution can adversely affect the surface of the device.

[0065] In one embodiment, the fluoride ion source is NHF. In one embodiment, the fluoride source is HF. In one embodiment, the fluoride source is a combination of NHF and HF. In some embodiments, when NHF is included as the fluoride ion source, it is provided as an aqueous solution containing 40% ammonium fluoride. When HF is included as the fluoride ion source, commercial grade hydrofluoric acid can be used. Typically, commercially available hydrofluoric acid is available as a 5% to 70% aqueous solution. In a preferred embodiment, electronic grade HF acid solutions are used, such electronic grade solutions typically having particle counts of less than 100 particles / mL, the particle size being 0.5 microns or less, and metal ions are present in the acid at low ppm to ppb levels (by volume).

[0066] In some specific embodiments, the fluoride ion source comprises about 0.01% to about 0.5% by weight of pure NH4F. In some specific embodiments, the fluoride ion source comprises about 0.01% to about 0.1% by weight of pure NH4F. In some specific embodiments, the fluoride ion source comprises about 0.01% to about 0.2% by weight of pure NH4F. In some specific embodiments, the fluoride ion source comprises about 0.01% to about 0.3% by weight of pure NH4F. In some specific embodiments, the fluoride ion source comprises about 0.01% to about 0.4% by weight of pure NH4F. In some specific embodiments, the fluoride ion source comprises about 0.05% by weight of pure NH4F. In some specific embodiments, the fluoride ion source comprises about 0.1% by weight of pure NH4F. In some specific embodiments, the fluoride ion source comprises about 0.2% by weight pure NH4F. In some specific embodiments, the fluoride ion source comprises about 0.3% by weight pure NH4F. In some specific embodiments, the fluoride ion source comprises about 0.4% by weight pure NH4F. In some specific embodiments, the fluoride ion source comprises about 0.5% by weight pure NH4F.

[0067] In some specific embodiments, the fluoride ion source comprises about 0.01% to about 0.15% by weight of pure HF. In some specific embodiments, the fluoride ion source comprises about 0.01% to about 0.12% by weight of pure HF. In some specific embodiments, the fluoride ion source comprises about 0.01% to about 0.10% by weight of pure HF. In some specific embodiments, the fluoride ion source comprises about 0.05% to about 0.15% by weight of pure HF. In some specific embodiments, the fluoride ion source comprises about 0.05% to about 0.10% by weight of pure HF. In some specific embodiments, the fluoride ion source comprises about 0.10% to about 0.15% by weight of pure HF. In some specific embodiments, the fluoride ion source comprises about 0.025% by weight of pure HF. In some specific embodiments, the fluoride ion source comprises about 0.03% pure HF by weight. In some specific embodiments, the fluoride ion source comprises about 0.035% pure HF by weight. In some specific embodiments, the fluoride ion source comprises about 0.04% pure HF by weight. In some specific embodiments, the fluoride ion source comprises about 0.045% pure HF by weight. In some specific embodiments, the fluoride ion source comprises about 0.05% pure HF by weight. In some specific embodiments, the fluoride ion source comprises about 0.06% pure HF by weight. In some specific embodiments, the fluoride ion source comprises about 0.07% pure HF by weight. In some specific embodiments, the fluoride ion source comprises about 0.08% pure HF by weight. In some specific embodiments, the fluoride ion source comprises about 0.09% pure HF by weight. In some specific embodiments, the fluoride ion source comprises about 0.10% by weight pure HF. In some specific embodiments, the fluoride ion source comprises about 0.12% by weight pure HF. In some specific embodiments, the fluoride ion source comprises about 0.15% by weight pure HF.

[0068] (iv) Buffer

[0069] As noted above, the disclosed and claimed cleaning compositions include (iv) one or more buffering agents. The buffering agents are used to adjust the pH of the cleaning composition to a range of from about 3 to about 9, which allows the most sensitive metals to be cleaned with minimal corrosion.

[0070] A somewhat acidic pH, however, is required for removal of highly inorganic etch residues and oxide skimming. Thus, in some embodiments, the pH of the cleaning composition is adjusted to a range of about 3 to about 6 for optimal effectiveness in cleaning etch residues. In other embodiments, the pH of the cleaning composition is adjusted to a range of about 4 to about 6 for optimal effectiveness in cleaning etch residues. For optimal effectiveness in cleaning etch residues, the pH is adjusted to a range of about 4 to about 7.

[0071] Preferred buffers include ammonium salts of carboxylic and / or polybasic acids. Examples of such ammonium salts include ammonium salts of acetic acid or phosphoric or citric acid. In one embodiment, for example, the buffer is an aqueous solution of ammonium acetate and acetic acid. Methods for preparing buffer solutions are well known in the art. An acidic buffer solution, when added to the compositions of the disclosed and claimed subject matter, provides a buffer composition with a pH adjusted to minimize corrosion of sensitive metals such as aluminum, copper, titanium, etc., and is added in an amount necessary to obtain a desired pH. The addition of the acidic buffer solution prevents pH fluctuations due to dilution with water or mixing with base or acid.

[0072] In some embodiments, the disclosed and claimed compositions include from about 1% to about 10% of a buffering agent by weight of the composition. In other embodiments, the disclosed and claimed compositions include from about 1% to about 5% of a buffering agent by weight. In other embodiments, the disclosed and claimed compositions include about 1% of a buffering agent by weight. In other embodiments, the disclosed and claimed compositions include about 1.5% of a buffering agent by weight. In other embodiments, the disclosed and claimed compositions include about 2% of a buffering agent by weight. In other embodiments, the disclosed and claimed compositions include about 2.5% of a buffering agent by weight. In other embodiments, the disclosed and claimed compositions include about 3% of a buffering agent by weight. In other embodiments, the disclosed and claimed compositions include about 3.5% of a buffering agent by weight. In other embodiments, the disclosed and claimed compositions include about 4% of a buffering agent by weight. In other embodiments, the disclosed and claimed compositions include about 4.5% of a buffering agent by weight. In another embodiment, the disclosed and claimed compositions include about 5% by weight of a buffering agent. In another embodiment, the disclosed and claimed compositions include about 5.5% by weight of a buffering agent. In another embodiment, the disclosed and claimed compositions include about 6% by weight of a buffering agent. In another embodiment, the disclosed and claimed compositions include about 6.5% by weight of a buffering agent. In another embodiment, the disclosed and claimed compositions include about 7% by weight of a buffering agent. In another embodiment, the disclosed and claimed compositions include about 7.5% by weight of a buffering agent. In another embodiment, the disclosed and claimed compositions include about 8% by weight of a buffering agent. In another embodiment, the disclosed and claimed compositions include about 8.5% by weight of a buffering agent. In another embodiment, the disclosed and claimed compositions include about 9% by weight of a buffering agent. In another embodiment, the disclosed and claimed compositions include about 9.5% by weight of a buffering agent. In other embodiments, the disclosed and claimed compositions comprise about 10% by weight of a buffering agent.

[0073] In addition to the ranges above, the cleaning composition can include amounts (total amounts) of one or more buffering agents (neat) within the ranges having starting and ending points from the following list of weight percent: 1, 1.5, 2, 2.5, 3, 4, 5, 6, 7, 8, 9, 10.

[0074] In one embodiment, the (iv) buffer is an aqueous solution of ammonium acetate and acetic acid. In one aspect of this embodiment, the (iv) buffer contains about 4.0% by mass to about 5.0% by mass of ammonium acetate and acetic acid. In one aspect of this embodiment, the (iv) buffer contains about 4.25% by mass to about 4.75% by mass of ammonium acetate and acetic acid. In one aspect of this embodiment, the (iv) buffer contains about 4.5% by mass of ammonium acetate and acetic acid. In one aspect of this embodiment, the (iv) buffer contains about 4.6% by mass of ammonium acetate and acetic acid. In one aspect of this embodiment, the (iv) buffer contains about 4.7% by mass of ammonium acetate and acetic acid. In one aspect of this embodiment, the (iv) buffer contains about 1.5% by mass to about 3.0% by mass of ammonium acetate and about 1.5% by mass to about 3.0% by mass of acetic acid. In one aspect of this embodiment, the (iv) buffer contains about 2.0% by mass to about 3.0% by mass of ammonium acetate and about 1.5% by mass to about 2.5% by mass of acetic acid. In one aspect of this embodiment, the (iv) buffer contains about 2.5% by mass of ammonium acetate and about 2.0% by mass of acetic acid. In one aspect of this embodiment, the (iv) buffer contains about 2.6% by mass of ammonium acetate and about 2.0% by mass of acetic acid.

[0075] (v) water

[0076] The disclosed and claimed cleaning compositions are water-based and therefore contain water. Water functions in a variety of ways, such as to dissolve one or more solid components in the composition, as a carrier for the components, as an aid to facilitate removal of inorganic salts and complexes, as a viscosity modifier for the composition, and as a diluent. Preferably, the water used in the cleaning compositions is deionized water (DIW).

[0077] In one embodiment, the cleaning composition contains about 10% to about 40% by weight of water, or about 20% to about 40% by weight of water, while in another embodiment, the cleaning composition contains about 25% to about 35% by weight of water.

[0078] The amount of (v) water in the disclosed and claimed compositions can be any range having any of the lower and upper limits selected from the group of 10, 11, 13, 25, 26, 29, 30, 31, 32, 34, 36, 39, 40% by weight of the cleaning composition. For example, the amount of water can range from about 10% to about 40% by weight, or from about 15% to about 35% by weight, or from about 20% to about 35% by weight, or any other combination of the lower and upper limits. In some embodiments, for example, the amount of water can range from about 10% to about 30%, about 20% to about 30%, about 25% to about 35%, about 20% to about 40%, about 20% to about 45%, about 25% to about 32%, about 30% to about 35%, about 28% to about 32%, or about 29% to about 35% by weight. One of ordinary skill in the art will understand that the amount of water can be varied within and near these ranges and still fall within the scope of the disclosed and claimed subject matter.

[0079] (vi) Optional corrosion inhibitors.

[0080] The disclosed and claimed subject matter further optionally includes one or more corrosion inhibitors that act to react with any metals, particularly copper, or nonmetals exposed on the substrate surface to be etched to passivate the surface and prevent over-etching during cleaning. Examples of corrosion inhibitors include carboxyl-containing organic compounds and their anhydrides, as well as thiazole compounds and imidazole compounds.

[0081] Exemplary carboxyl-containing organic compounds and anhydrides thereof include formic acid, propionic acid, butyric acid, isobutyric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, maleic acid, fumaric acid, benzoic acid, phthalic acid, 1,2,3-benzenetricarboxylic acid, glycolic acid, lactic acid, maleic acid, acetic anhydride, and salicylic acid.

[0082] Exemplary triazole compounds include benzotriazole, o-tolyltriazole, m-tolyltriazole, p-tolyltriazole, carboxybenzotriazole, 1-hydroxybenzotriazole, nitrobenzotriazole, and dihydroxypropylbenzotriazole.

[0083] Exemplary imidazole compounds include benzimidazole and 2-mercaptobenzimidazole.

[0084] In exemplary embodiments, the one or more corrosion inhibitors in the compositions of the disclosed and claimed subject matter include one or more of benzotriazole, carboxybenzotriazole, aminobenzotriazole, D-fructose, t-butylcatechol, L-ascorbic acid, vanillin, salicylic acid, diethylhydroxylamine, poly(ethyleneimine), 2-mercaptobenzimidazole.

[0085] In another embodiment, the one or more corrosion inhibitors are triazoles and are at least one of benzotriazole, o-tolyltriazole, m-tolyltriazole, and p-tolyltriazole, more preferably the corrosion inhibitor includes benzotriazole.

[0086] When present, the disclosed and claimed compositions comprise from about 0.1% to about 15% by weight of the composition of one or more corrosion inhibitors (neat), preferably from about 0.1 to about 10%, preferably from about 0.5 to about 5%, and more preferably from about 0.1 to about 1%, or from about 0.1 to about 0.5%, by weight of the composition. In addition to the ranges above, the disclosed and claimed compositions can include amounts of one or more corrosion inhibitors (total amounts) within ranges having starting and ending points from the following list of weight percent: 0.1, 0.2, 0.25, 0.4, 0.5, 1, 1.5, 2, 2.5, 3, 4, 5, 6, 7, 8, 9, 10, and 15.

[0087] In other embodiments, the disclosed and claimed compositions are substantially free of corrosion inhibitors.

[0088] In other embodiments, the disclosed and claimed compositions do not include a corrosion inhibitor.

[0089] Other Optionally Excluded Ingredients

[0090] In other embodiments, the compositions may comprise, be substantially free, or be free of any or all of oxidizing agents, surfactants, chemical modifiers, dyes, and / or biocides.

[0091] In some embodiments, the compositions of the disclosed and claimed subject matter can be free or substantially free of at least one of sulfur-containing compounds, bromine-containing compounds, chlorine-containing compounds, iodine-containing compounds, halogen-containing compounds, phosphorus-containing compounds, metal-containing compounds, sodium-containing compounds, calcium-containing compounds, alkylthiols, organosilanes, lithium-containing compounds, silicon-containing compounds, oxidizers, peroxides, buffer species, polymers, inorganic acids, amides, metal hydroxides, and abrasives, or any combination of two or more of the following, or can be free of any of the following if already present in the composition:

[0092] How to use

[0093] The disclosed and claimed subject matter further includes a method of removing all or part of one or more photoresists or similar materials from a substrate using one of the disclosed and claimed photoresist stripper solutions. As mentioned above, the disclosed and claimed photoresist stripper solutions can be used to remove polymeric resist materials present in monolayer or certain types of bilayer resists. Using the methods taught below, a polymer monolayer of a polymeric resist can be effectively removed from a standard wafer having a single polymer layer. The same method can also be used to remove a single polymer layer from a wafer having a bilayer composed of a first inorganic layer and a second or outer polymer layer. Finally, two polymer layers can be effectively removed from a wafer having a bilayer composed of two polymer layers.

[0094] In one aspect of this embodiment, a process or method for removing photoresist or similar material from a substrate includes: (i) removing a photoresist or similar material from a substrate; (i) contacting the substrate with one or more photoresist stripper solutions for a time sufficient to remove a desired amount of photoresist or similar material; (ii) removing the substrate from the stripper solution; (iii) rinsing the stripper solution from the substrate with DI water or a solvent; and (iv) Optionally, drying the substrate.

[0095] In one embodiment, step (i) comprises immersing the substrate in one or more photoresist stripper solutions and, optionally, agitating the substrate to facilitate removal of the photoresist. Such agitation can be affected by mechanical stirring, circulation, or bubbling an inert gas through the composition.

[0096] In one embodiment, step (ii) comprises rinsing the cleaned substrate with water or alcohol. In one embodiment of this embodiment, deionized ("DI") water is the preferred form of water. In another embodiment of this embodiment, isopropanol (IPA) is the preferred solvent. In another embodiment of this embodiment, the component that undergoes oxidation is or can be washed under an inert atmosphere.

[0097] Using the above method (as well as variations thereof), the disclosed and claimed photoresist stripper solution can be used for the removal of thick and thin positive or negative photoresists. The thick photoresist can be about 5 μm to about 100 μm or more, or about 15 μm to 100 μm, or about 20 μm to about 100 μm in advanced packaging applications for semiconductor devices. In other cases, the chemical solution can be used to remove photoresists of about 1 μm to about 100 μm or more, or about 2 μm to 100 μm, or about 3 μm to about 100 μm. EXAMPLES

[0098] example

[0099] Reference is now made to more specific embodiments of the present disclosure and experimental results supporting such embodiments. Examples are provided to more fully explain the disclosed subject matter and should not be construed as limiting the disclosed subject matter in any way.

[0100] It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed subject matter and the specific examples provided herein without departing from the spirit or scope of the disclosed subject matter. Accordingly, the disclosed subject matter, including the description provided by way of the following examples, is intended to cover modifications and variations of the disclosed subject matter that come within the scope of any claims and their equivalents.

[0101] The abbreviations used in the examples are as follows: [Table 1]

[0102] The photoresist removal ability was measured by optical microscopy. The etch rates of silicon oxide and TEOS films were evaluated from the thickness change before and after etching and measured by spectroscopic ellipsometry SCI FilmTek SE2000. The typical starting thickness was 1000 Å for silicon oxide. The etch rates of ITO, aluminum, and titanium were evaluated from the thickness change before and after etching and measured by CDE Resmap. The typical starting thickness was 1000 Å for ITO, Al, and Ti substrates. All beaker and etch rate tests were performed at ambient temperature to 60°C. Data was reported at 40°C and 35°C. Wafer coupons of various substrates were immersed in the formulations at the desired process temperature and process time. After DIW cleaning, the wafer coupons were blown dry with nitrogen gas. The film thickness was measured by CDS Resmap (metal substrates) or ellipsometer (dielectric substrates). The difference in film thickness before and after formulation immersion was calculated and the process time was used to derive the etch rate. The cleaning test was performed by immersing the patterned wafer substrate in the formulation for a certain period of time. After cleaning the wafer, the substrate was dried by N2 blowing. The cleaning performance was then evaluated by SEM. Generally, the cleaning performance is acceptable if the post-etch residue along the sidewall is effectively removed. Furthermore, no discernible damage should be observed on the substrate. This is also confirmed by the substrate etch rate data. If the formulation is compatible with the substrate, a low etch rate of the substrate should be observed. [Table 2]

[0103] Table 1 shows that Formulation 1, which contains fluoride ions, results in removal of the 12 μm photoresist layer, while Formulation 2, in which fluoride ions are omitted, does not show any photoresist etching, suggesting that the presence of fluoride ions is a key component in photoresist removal. [Table 3]

[0104] Table 2 shows the effect on the amount of photoresist removal and cleaning performance when different solvents are used in combination with fluoride ions. Among those solvents, BDG-based formulation 5 showed similar cleaning performance as NMP-based formulation 1, however, higher photoresist removal and SiO2 etch rate were observed. PG-based formulation 3 showed much less photoresist removal and lower SiO2 etch rate, however, cleaning performance was poor. Other solvents did not have a significant effect on ITO etch rate. All ITO etch rates were low, suggesting that all fluoride formulations have good compatibility with ITO substrates. [Table 4]

[0105] Table 3 shows that by adding more than 20% PG to the BDG-based formulation, both the photoresist etch amount and the SiO2 etch rate are reduced; however, the cleaning performance still needs to be improved. [Table 5]

[0106] Table 4 shows that decreasing the PG concentration below 10% results in an obvious increase in SiO2 etch rate, but the cleaning performance is improved when comparing formulations 6 and 7. The SiO2 etch rate was reduced by decreasing the fluoride concentration in the PG and BDG mixed solvent based formulations without affecting the cleaning performance. [Table 6]

[0107] Table 5 shows the cleaning performance of the formulations with different solvents on the post-etch residues, which are aluminum-containing and silicon-containing residues. The formulations with BDG and PG showed less residue on the substrate after cleaning. On the other hand, formulation 13, which contained only the sole solvent DEF, showed good cleaning performance. The results indicate that the polarity of DEF plays an important role in removing Al-containing residues. Only the DEF solvent could effectively remove the post-etch residues, while the formulations with BDG and PG still showed some post-etch residues after cleaning.

[0108] While the disclosed and claimed subject matter has been described and illustrated with a certain degree of particularity, it is to be understood that this disclosure has been made by way of example only, and that numerous changes in the conditions and sequence of the steps can be made by those skilled in the art without departing from the spirit and scope of the disclosed and claimed subject matter.

Claims

1. (i) from about 1% to about 10% by weight of one or more polyhydric alcohols; (ii) from about 50% to about 80% by weight of (iia) one or more organic water-soluble glycol ether solvents or (iib) one or more amides selected from diethylformamide (DEF), N-methylformamide, N-ethylformamide, N,N-dimethylacetamide, or N,N-dimethylpropionamide; (iii) about 0.1% to about 0.5% by weight of a fluoride ion source comprising one or more of pure ammonium fluoride and pure HF; (iv) from about 1% to about 10% by weight of one or more buffering agents; (v) about 10% to about 40% by weight of water, and (vi) optionally, one or more corrosion inhibitors; A composition comprising:

2. The composition of claim 1 , wherein the composition has a pH greater than about 3 and less than about 6.

3. The composition of claim 1, wherein the composition does not contain at least one of 4-methylmorpholine N-oxide, trimethylamine N-oxide, peracetic acid, urea, hydrogen peroxide, amidoxime compounds, hydroxylamine, hydroxylamine derivatives, and metal-containing compounds.

4. The composition of claim 1, wherein the (i) one or more polyhydric alcohols in the composition are about 1% by weight to about 10% by weight of the composition and are one or more of glycerol, ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol, hexylene glycol, 1,2-butanediol, 1,4-butanediol, and 2,3-butanediol.

5. 2. The composition of claim 1, wherein said (i) one or more polyhydric alcohols comprises about 5% to about 10% by weight of propylene glycol.

6. 10. The composition of claim 1, wherein said (iia) one or more organic water-soluble glycol ether solvents comprise from about 50% to about 60% by weight of diethylene glycol butyl ether (DBG).

7. 10. The composition of claim 1, wherein the composition comprises (iib) one or more amides selected from diethylformamide (DEF), N-methylformamide, N-ethylformamide, N,N-dimethylacetamide, and N,N-dimethylpropionamide.

8. The composition of claim 1 , wherein the composition comprises (iib) about 50% to about 60% by weight of diethylformamide.

9. The composition of claim 1, wherein the composition comprises from about 50% to about 60% by weight of (iib) N-methylformamide.

10. The composition of claim 1, wherein the composition comprises from about 50% to about 60% by weight of (iib) N,N-dimethylacetamide.

11. The composition of claim 1, wherein the composition comprises from about 50% to about 60% by weight of (iib) N,N-dimethylpropionamide.

12. 2. The composition of claim 1, wherein the (iii) fluoride ion source comprises one or both of pure ammonium fluoride and pure HF.

13. 10. The composition of claim 1, wherein the (iii) fluoride ion source is pure ammonium fluoride and is about 0.01% to about 0.5% by weight of the composition.

14. 10. The composition of claim 1, wherein the (iii) fluoride ion source is pure HF and is about 0.01% to about 0.15% by weight of the composition.

15. 2. The composition of claim 1, wherein the (iv) buffering agent is about 1% to about 10% by weight of the composition and comprises an aqueous solution of ammonium acetate and acetic acid.

16. The composition of claim 1, wherein (v) water is about 10% to about 40% by weight of the composition.

17. 2. The composition of claim 1, wherein the (vi) one or more corrosion inhibitors comprises from about 0.1% to about 15% by weight of the composition and includes one or more of benzotriazole, o-tolyltriazole, m-tolyltriazole, and p-tolyltriazole.

18. 2. The composition of claim 1, wherein the (i) polyhydric alcohol comprises from about 5% to about 10% by weight of propylene glycol (PG), and the (ii) organic water-soluble glycol ether solvent comprises from about 50% to about 60% by weight of diethylene glycol butyl ether (BDG).

19. 10. The composition of claim 1, (i) the one or more polyhydric alcohols comprise about 5% by mass of propylene glycol (PG); (ii) the one or more organic water-soluble glycol ether solvents consist of about 58.9% by weight of diethylene glycol butyl ether (BDG); (iii) the fluoride ion source comprises about 0.28% by weight of pure ammonium fluoride; (iv) the one or more buffering agents comprise about 2.6% by weight ammonium acetate and about 2.0% by weight acetic acid; and The remainder of the composition is (v) water. composition.

20. 20. The composition of claim 19, wherein the optional (vi) one or more corrosion inhibitors is present and comprises about 1 wt. % benzotriazole.

21. 10. The composition of claim 1, (i) the one or more polyhydric alcohols comprise approximately 10% by mass of propylene glycol (PG); (ii) the one or more organic water-soluble glycol ether solvents consist of about 53.9% by weight of diethylene glycol butyl ether (BDG); (iii) the fluoride ion source comprises about 0.28% by weight of pure ammonium fluoride; (iv) the one or more buffering agents comprise about 2.6% by weight ammonium acetate and about 2.0% by weight acetic acid; and The remainder of the composition is (v) water. composition.

22. 22. The composition of claim 21, wherein the optional (vi) one or more corrosion inhibitors is present and comprises about 1 wt. % benzotriazole.

23. 10. The composition of claim 1, (i) the one or more polyhydric alcohols comprise about 4% by mass of propylene glycol (PG); (iib) the diethylformamide is composed of approximately 58.6% by weight of diethylformamide; (iii) the fluoride ion source comprises about 3.5% by weight of pure ammonium fluoride; (iv) the one or more buffering agents comprise about 2.6% by weight ammonium acetate and about 2.0% by weight acetic acid; and The remainder of the composition is (v) water. composition.

24. 1. A method for removing photoresist or similar material from a substrate, comprising the steps of: (i) contacting the substrate with the composition of claim 1 for a time sufficient to remove a desired amount of the photoresist or similar material; (ii) removing the substrate from the composition; (iii) washing the composition from the substrate with DI water or a solvent; and (iv) optionally drying the substrate; A method comprising:

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