Nickel oxide doped target, its manufacturing method and use

Abstract

A nickel oxide doped target includes a nickel oxide base material and a doping material that includes at least one of compounds containing one or more of the following elements: Cu, Ca, Cr, Sn, Hg, Pb, Mg, Mn, Ag, Co, and Pr.

Description

[Technical field]

[0001] The present application relates to the technical field of sputtering process targets, and in particular to nickel oxide doped targets and their manufacturing methods and applications. [Background technology]

[0002] In perovskite solar cells, efficient transport of photoelectrons depends on the performance stability and repeatability of the perovskite hole transport layer (HTL), and currently, there are many materials that can be used as the hole transport layer of perovskite thin film cells, among which nickel oxide is the most common. At present, the relatively mature technical means of manufacturing the hole transport layer is usually produced by a sputtering process using a nickel oxide target.

[0003] As the performance requirements of perovskite solar cells increase, how to improve the performance of the hole transport layer is a current research focus. Summary of the Invention

[0004] The present application has been made in view of the above problems, and an object of the present application is to provide a novel nickel oxide-doped target and to further realize improved performance of a hole transport layer produced using the nickel oxide-doped target.

[0005] To achieve the above objective, the present application provides a nickel oxide doped target and its manufacturing method and use.

[0006] According to a first aspect of the present application, there is provided a nickel oxide doped target comprising a nickel oxide base material and a doping material comprising at least one of compounds containing one or more of the following elements: Cu, Ca, Cr, Sn, Hg, Pb, Mg, Mn, Ag, Co, and Pr.

[0007] Thus, the present application demonstrates that by doping with specific compounds, the hole transport layer energy band gap of perovskite solar cells produced with the nickel oxide doped targets of the present application is narrower, the spectral response is higher, and the cell conversion efficiency is higher, significantly improving the performance of the hole transport layer and perovskite solar cells produced with the targets of the present application.

[0008] In any of the embodiments, the dopant is CuO, Cu 2 O, Cu 2 S, CuI, CuSCN, CuGaO 2 , CoO, Cr 2 O 3 , SnO, SnS, Hg 2 O, PbO, AgO, Ag 2 O, MnO, Pr 2 O 3 The addition of the dopant material is advantageous in further improving the performance of the hole transport layer and the battery.

[0009] In any of the embodiments, the dopant is CuO, Cu 2 O, Cu 2 S, CuI, CuSCN, CuGaO 2 , CoO, Cr 2 O 3 , SnO, SnS, Hg 2 O, PbO, AgO, Ag 2 O, MnO, Pr 2 O 3 The inventors have unexpectedly discovered that when at least two of the doping materials are simultaneously doped, the performance of the battery, particularly the conversion efficiency, can be further improved.

[0010] In any of the embodiments, the content of the dopant in the nickel oxide-doped target is 0.1 wt % to 20 wt %.

[0011] In any one of the embodiments, the content of CuO is 0 to 15%, Cu ... 2The O content is 0-15%, Cu 2 S content: 0-15%, CuI content: 0-20%, CuSCN content: 0-15%, CuGaO 2 The content of is 0-15%, the content of CoO is 0-8%, and the content of Cr is 2 O 3 The content of SnO is 0-15%, the content of SnS is 0-15%, and the content of Hg 2 O content is 0-15%, PbO content is 0-15%, AgO content is 0-15%, Ag 2 The O content is 0-15%, the MnO content is 0-10%, and the Pr 2 O 3 The content of is 0 to 15%, and the total content of the doping substances is 0.1% to 20%.

[0012] In any of the embodiments, the nickel oxide doped target is obtained by a method of graded plasma spraying, which results in a more uniform distribution of dopant within the nickel oxide substrate.

[0013] A second aspect of the present application further provides a method for producing a nickel oxide-doped target, the method for producing the nickel oxide-doped target comprising: warm spraying a binding coating layer onto a target backplate or target backpipe; introducing nickel oxide powder and powders of each dopant into respective plasma-generating spray coaters; and simultaneously plasma spraying nickel oxide and each dopant onto the target backplate or target backpipe to obtain the nickel oxide-doped target, wherein the dopant is selected from at least one of compounds containing one or more of the following elements: Cu, Ca, Cr, Sn, Hg, Pb, Mg, Mn, Ag, Co, and Pr.

[0014] The method of the present application can flexibly control the type and content of the dopant, thereby obtaining nickel oxide-doped targets with different types and contents of the dopant; further, the method of the present application is more advantageous in obtaining nickel oxide-doped targets with a more uniform dopant distribution.

[0015] According to a third aspect of the present application there is further provided the use of a nickel oxide doped target according to the first aspect of the present application or a nickel oxide doped target produced by a method according to the second aspect of the present application in the manufacture of a hole transport layer of a perovskite solar cell.

[0016] The nickel oxide-doped target according to the present application includes one or more doping materials, and the perovskite solar cell manufactured with the nickel oxide-doped target according to the present application has a narrower hole transport layer energy band gap, a higher spectral response, and a higher cell conversion efficiency, which shows that the hole transport layer of the perovskite solar cell for manufacturing the nickel oxide-doped target according to the present application can improve the performance of the cell. [Brief description of the drawings]

[0017] [Figure 1] 2 shows the spectral curves of hole transport layers produced using the nickel oxide-doped target of Example 1 and the nickel oxide target of Comparative Example 1. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Hereinafter, with appropriate reference to the drawings, embodiments of the nickel oxide doped target and its manufacturing method and use will be described in detail and specifically disclosed. However, unnecessary detailed description may be omitted. For example, detailed description of well-known matters and duplicated description of the same structure may be omitted. This is to avoid the following description from becoming unnecessarily long and to allow those skilled in the art to easily understand. Note that the drawings and the following description are provided to allow those skilled in the art to fully understand the present application, and are not intended to limit the subject matter described in the claims.

[0019] The "ranges" disclosed in this application are defined in the form of lower and upper limits, where a given range is defined by selecting one lower limit and one upper limit, and the selected lower and upper limits define the boundaries of the particular range. Ranges defined in this way may or may not include the end values, and may be arbitrarily combined, i.e., any lower limit may be combined with any upper limit to form a range. For example, if 60-120 and 80-110 are listed for a particular parameter, it is understood that the ranges 60-110 and 80-120 are also contemplated. However, if minimum range values ​​1 and 2 are listed, and maximum range values ​​3, 4, and 5 are listed, then the ranges 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5 are all contemplated. In this application, unless otherwise stated, the numerical range "ab" is a shorthand expression representing any combination of real numbers between a and b, where a and b are both real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is merely a shorthand representation of combinations of these numbers. Also, expressing that a parameter is an integer >= 2 is equivalent to disclosing that the parameter is, for example, the integers 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0020] Unless otherwise stated, all the embodiments and optional embodiments in the present application can be combined with each other to form a new technical solution.

[0021] Unless otherwise stated, all technical features and optional technical features of the present application can be combined with each other to form a new technical solution.

[0022] Unless otherwise stated, all steps in this application may be performed sequentially or randomly, preferably sequentially. For example, when the method includes steps (a) and (b), it means that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, when the method mentioned further includes step (c), it means that step (c) is added to the method in any order, for example, the method may include steps (a), (b) and (c), may include steps (a), (c) and (b), may include steps (c), (a) and (b), etc.

[0023] Unless otherwise stated, the terms "comprise" and "include" referred to in this application may be open ended or closed ended. For example, the terms "comprise" and "include" may further include or include other ingredients not listed, or may include or include only the listed ingredients.

[0024] In this application, unless otherwise stated, the term "or" is inclusive. For example, the phrase "A or B" means "A, B, or both A and B." More specifically, any of the following conditions satisfies the condition "A or B." A is true (or exists) and B is false (or does not exist). A is false (or does not exist) and B is true (or exists). Both A and B are true (or exist).

[0025] In the course of researching the manufacture of the hole transport layer of the perovskite solar cell, the applicant has found that the performance of the hole transport layer can be improved by doping the nickel oxide thin film, which is the hole transport layer, with different elements. However, currently, the target is often a single nickel oxide target, and the manufacture of the doped nickel oxide thin film requires the nickel oxide target and another target to be co-sputtered, which is a complicated process, and the doped elements in the resulting nickel oxide thin film are also difficult to distribute uniformly, limiting the manufacture of nickel oxide-doped thin films and the improvement of their electrical performance. In order to further improve the performance of the hole transport layer and thereby improve the performance of the perovskite solar cell, the present application provides a nickel oxide-doped target for manufacturing the hole transport layer of the perovskite solar cell.

[0026] In one embodiment of the present application, the present application proposes a nickel oxide doped target comprising a nickel oxide base material and a doping material comprising at least one of compounds containing one or more of the following elements: Cu, Ca, Cr, Sn, Hg, Pb, Mg, Mn, Ag, Co, and Pr.

[0027] Although the principle is not yet clear, the applicant has unexpectedly discovered that when the nickel oxide-doped target of the present application is used to manufacture a hole transport layer of a perovskite solar cell, the energy band gap of the hole transport layer is narrower and the spectral response is higher due to doping with a compound of a specific element, and the conversion efficiency of the cell is significantly improved. Furthermore, compared with using methods such as co-sputtering, manufacturing a hole transport layer with the nickel oxide-doped target of the present application can effectively improve the manufacturing process window of the doped hole transport layer, and it is easier to achieve the process stability and consistency of the thin film.

[0028] In some embodiments, the dopant is CuO, Cu 2 O, Cu 2 S, CuI, CuSCN, CuGaO 2 , CoO, Cr2 O 3 , SnO, SnS, Hg 2 O, PbO, AgO, Ag 2 O, MnO, Pr 2 O 3 Includes at least one of the following:

[0029] The inventors discovered that when a single dopant is selected, the single element is prone to incomplete reaction with oxygen, making it difficult to control the component composition and doping ratio, and that some elements, such as Ga, Ag, Pb, I, and S, are difficult to powder and use in plasma spraying. When the above compounds are directly doped into a nickel oxide substrate as a dopant, the component composition and content can be more easily controlled than when a single element is used for doping, and the electrical performance of the perovskite solar cell in which a hole transport layer is manufactured using the target is further improved.

[0030] In some embodiments, the dopant is CuO, Cu 2 O, Cu 2 S, CuI, CuSCN, CuGaO 2 , CoO, Cr 2 O 3 , SnO, SnS, Hg 2 O, PbO, AgO, Ag 2 O, MnO, Pr 2 O 3 The inventors have found that when at least two of the doping materials are simultaneously doped, the composite target produced contains anions and cations of different valences at the same time, which makes the energy level structure of the produced thin-film solar cell have a larger tuning window, and the energy level tuning is easier, so that the light conversion efficiency of the cell is further improved.

[0031] In some embodiments, the content of the dopant in the nickel oxide doped target is 0.1 wt% to 20 wt%. The inventors have found that a content of the dopant within this range is more favorable for improving the performance of the nickel oxide thin film produced, and that too much dopant, for example higher than 20 wt%, reduces the performance of the nickel oxide substrate, which is detrimental to improving the overall performance.

[0032] In some embodiments, the content of CuO is 0 to 15%, Cu ... 2 The O content is 0-15%, Cu 2 S content: 0-15%, CuI content: 0-20%, CuSCN content: 0-15%, CuGaO 2 The content of is 0-15%, the content of CoO is 0-8%, and the content of Cr is 2 O 3 The content of SnO is 0-15%, the content of SnS is 0-15%, and the content of Hg 2 O content is 0-15%, PbO content is 0-15%, AgO content is 0-15%, Ag 2 The O content is 0-15%, the MnO content is 0-10%, and the Pr 2 O 3 The content of each of the doping materials is 0-15%, and the total content of the doping materials is 0.1%-20%. The inventors have found that the optimal content ranges of different doping materials for improving the performance of the hole transport layer are different, and each of the above compounds is advantageously doped into the nickel oxide target in the concentration ranges described in this application to improve the performance of the hole transport layer.

[0033] In any of the embodiments, the nickel oxide doped target is obtained by a method of graded plasma spraying, which results in a more uniform distribution of dopant within the nickel oxide substrate.

[0034] The classed plasma spraying described in this application may be understood as different materials, for example nickel oxide and one or more doping materials, are each sprayed independently.

[0035] According to a second aspect of the present application, there is further provided a method for producing a nickel oxide doped target, the method comprising the steps of: warm spraying a binding coating layer onto a target backplate or target backpipe; introducing nickel oxide powder and powders of each dopant into respective plasma-generating spray coaters; and simultaneously plasma spraying nickel oxide and each dopant onto the target backplate or target backpipe to obtain the nickel oxide-doped target, wherein the dopant is selected from at least one of compounds containing one or more of the following elements: Cu, Ca, Cr, Sn, Hg, Pb, Mg, Mn, Ag, Co, and Pr.

[0036] The distribution of the doped material in the nickel oxide-doped target obtained by the method of the present application is more uniform; furthermore, the method of the present application can be used to greatly improve the relative density of the target and reduce the defects inside the target, so that the material of the obtained nickel oxide thin film is more uniform, which is more favorable for improving the performance of the hole transport layer.

[0037] In addition, the method of the present application can flexibly control the type and content of the dopant, and can directly prepare a target doped with an appropriate concentration and type of dopant according to different performance requirements of the hole transport layer, so that a hole transport layer having the corresponding type and content of dopant can be directly obtained through the sputtering process, thereby realizing the convenience and accuracy of process control.

[0038] Furthermore, the manufacturing method according to the present application is a simple process, has strong controllability, and facilitates rapid and efficient manufacturing molding over a wide range.

[0039] In some embodiments, the dopant is CuO, Cu 2 O, Cu 2 S, CuI, CuSCN, CuGaO 2 , CoO, Cr 2 O 3 , SnO, SnS, Hg 2 O, PbO, AgO, Ag 2 O, MnO, Pr 2 O 3 is selected from at least one of:

[0040] In some embodiments, the dopant is CuO, Cu 2 O, Cu 2 S, CuI, CuSCN, CuGaO 2 , CoO, Cr 2 O 3 , SnO, SnS, Hg 2 O, PbO, AgO, Ag 2 O, MnO, Pr 2 O 3 At least two of the following are selected:

[0041] In some embodiments, the content of the dopant in the nickel oxide doped target is between 0.1 wt % and 20 wt %.

[0042] In some embodiments, the content of CuO is 0 to 15%, Cu ... 2 The O content is 0-15%, Cu 2 S content: 0-15%, CuI content: 0-20%, CuSCN content: 0-15%, CuGaO 2 The content of is 0-15%, the content of CoO is 0-8%, and the content of Cr is 2 O 3 The content of SnO is 0-15%, the content of SnS is 0-15%, and the content of Hg 2 O content is 0-15%, PbO content is 0-15%, AgO content is 0-15%, Ag 2 The O content is 0-15%, the MnO content is 0-10%, and the Pr 2 O3 The content of is 0 to 15%, and the total content of the doping substances is 0.1% to 20%.

[0043] According to a third aspect of the present application there is further provided the use of a nickel oxide doped target according to the first aspect of the present application or a nickel oxide doped target produced by a method according to the second aspect of the present application in the manufacture of a hole transport layer of a perovskite solar cell.

[0044] The following is a description of the examples of the present application. The examples described below are illustrative and are used only to interpret the present application, and should not be understood as limiting the present application. In the examples, specific techniques or conditions are not specified, but are carried out according to the techniques or conditions described in the technical literature or product instructions. Reagents or equipment used that do not specify the manufacturer are all common products that can be purchased commercially.

[0045] Example 1 (1) The back plate was fixed to a clamp of a plasma spraying device, and a binding indium coating layer (binding material) having a thickness of 1.3 mm was warm sprayed onto the back plate.

[0046] (2) The powdered nickel oxide substrate and the dopant AgO were added into different plasma powder spray chambers of the plasma powder spray box, respectively, so as to add different materials independently.

[0047] The binding material of the back plate is heated to 200°C, and then the doping material and nickel oxide substrate plasma powder are sprayed onto the heated binding material from the respective nozzles. The standard process parameters are: plasma power 15KW, angle 40°, back plate temperature room temperature to 200°C, and the deposition and mixing are made on the back plate to form a pinch-angle coating between the nozzles, forming a uniform doping effect; and the doping amount of AgO is controlled to 0.5wt% by controlling the spray amount of the corresponding nozzle. As the plasma spraying continued, the nickel oxide doped material on the back plate continued to thicken and after the thickness reached a set value of 16 mm, the sprayer stopped the plasma spraying, yielding a nickel oxide target doped with AgO.

[0048] (3) The backplate target was removed and laser cut and dressed, the outer edge of the target was cut off and salvaged, and the edge was dressed to form the target mounting edge, completing the basic secondary processing of the target, after which the target surface was cleaned.

[0049] Example 2 The other conditions were the same as in Example 1, except that the doping amount of AgO was adjusted to 1 wt %.

[0050] Example 3 The other conditions were the same as in Example 1, except that the doping amount of AgO was adjusted to 2 wt %.

[0051] Example 4 The doping material in step (2) was adjusted to CuI, and the doping amount of CuI was controlled to 20 wt %, otherwise the procedure was the same as in Example 1.

[0052] Example 5 In step (2), different materials, nickel oxide substrate, CuGaO 2 The powdered nickel oxide base material, doping material CuGaO, and SnS were added independently. 2 and SnS were added into three different plasma powder spray chambers of the plasma powder spray box, respectively, and CuGaO 2 The doping amounts of SnS and SnS were controlled to 5 wt %, respectively, and the rest was the same as in Example 1.

[0053] Comparative Example 1 The target was a commercially available nickel oxide target.

[0054] Perovskite solar cell manufacturing Step 1: The ITO conductive glass substrate was cleaned and dried, and then subjected to a cleaning treatment with ultraviolet light to obtain a pre-treated substrate base.

[0055] Step 2: The pre-treated substrate base and the nickel oxide doped target of Examples 1-5 or the nickel oxide target of Comparative Example 1 were transferred to a high vacuum sputtering system, and a hole transport layer was sputtered onto the pre-treated substrate base, and the specific conditions were as follows:

[0056] Oxygen was used as the working gas, the gas flow rate was 200 sccm, and the sputtering pressure was 2.3 × 10 -3 One layer of nickel oxide doped thin film with a thickness of 25 nm was sputter deposited as a hole transport layer under the following conditions: 1.5 mbar, target-to-substrate base distance of 79.5 mm, sputtering power of 200 W, and heating temperature of 125 °C.

[0057] Step 3: The perovskite precursor solution was spin-coated on the hole transport layer, and then chlorobenzene solvent was added to continue spin-coating. After annealing at 100°C, a perovskite crystal thin film, i.e., a light-absorbing layer, was obtained.

[0058] Step 4: A chlorobenzene solution of PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) was spin-coated on the light absorbing layer to form an electron transport layer.

[0059] Step 5: Under vacuum, a metal electrode material, a silver-aluminum alloy, was deposited on the electron transport layer by thermal evaporation to obtain a perovskite solar cell.

[0060] Test method: Energy Band Distribution Test: The energy band distribution of the perovskite solar cell hole transport layer was tested by an X-ray photoelectron spectrometer (XPS) with model number Escalab 250Xi (from Thermo Scientific), thereby obtaining the valence band (CBM value), conduction band (VBM value) and energy band gap (ΔEg).

[0061] Spectral Response Test: The spectral curves of the perovskite solar cell hole transport layer were tested on a Thermo Scientific Nicole iS 50 infrared spectrophotometer.

[0062] The energy band distribution results of the hole transport layer of the perovskite solar cells manufactured using the nickel oxide-doped targets manufactured in Examples 1 to 3 of the present application and the nickel oxide target of Comparative Example 1 are shown in Table 1. The conversion efficiency results of the perovskite solar cells manufactured using the targets of each Example and Comparative Example are shown in Table 2.

[0063] The spectral curves of the hole transport layers of the perovskite solar cells produced with the targets of Example 1 and Comparative Example 1 are shown in FIG. 1. As can be seen from FIG. 1, the hole transport layers produced with the nickel oxide-doped target of the present application have higher transmittances for incident light of different wavelengths, indicating that the spectral response of the hole transport layers produced with the nickel oxide-doped target of the present application is higher.

[0064] [Table 1]

[0065] [Table 2]

[0066] As can be seen from Table 1, the energy band gap of the hole transport layer produced with the nickel oxide doped targets of Examples 1 to 3 of the present application is narrower, indicating that the light absorption range of the hole transport layer of the present application is larger.

[0067] As can be seen from Table 2, the short circuit current and short circuit current density, and the photoelectric conversion efficiency of the cell with the hole transport layer manufactured with the nickel oxide-doped target of each example of the present application are significantly improved, in particular, the photoelectric conversion efficiency of the co-doped hole transport layer is further improved, indicating that the electrical performance of the perovskite solar cell including the hole transport layer manufactured with the nickel oxide-doped target of the present application is significantly improved.

[0068] The above is only a preferred embodiment of the present application, and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application should be included in the scope of protection of the present application.

Claims

1. 1. A nickel oxide doped target comprising a nickel oxide base material and a doping material comprising at least one of compounds containing one or more of the following elements: Cu, Ca, Cr, Sn, Hg, Pb, Mg, Mn, Ag, Co, and Pr.

2. The doping material is CuO, Cu ２ O, Cu ２ S, CuI, CuSCN, CuGaO ２ , CoO, Cr ２ O ３ , SnO, SnS, Hg ２ O, PbO, AgO, Ag ２ O, MnO, Pr ２ O ３ 2. The nickel oxide doped target of claim 1, comprising at least one of:

3. The doping material is CuO, Cu ２ O, Cu ２ S, CuI, CuSCN, CuGaO ２ , CoO, Cr ２ O ３ , SnO, SnS, Hg ２ O, PbO, AgO, Ag ２ O, MnO, Pr ２ O ３ The nickel oxide doped target of claim 2 , comprising at least two of:

4. 2. The nickel oxide doped target of claim 1, wherein the content of the dopant in the nickel oxide doped target is 0.1 wt % to 20 wt %.

5. The content of CuO is 0 to 15%, Cu ... ２ The content of O is 0 to 15%, Cu ２ The content of S is 0 to 15%, the content of CuI is 0 to 20%, the content of CuSCN is 0 to 15%, and CuGaO ２ The content of is 0 to 15%, the content of CoO is 0 to 8%, and the content of Cr is ２ O ３ The content of SnO is 0-15%, the content of SnS is 0-15%, and the content of Hg ２ The O content is 0-15%, the PbO content is 0-15%, the AgO content is 0-15%, and the Ag ２ The content of O is 0 to 15%, the content of MnO is 0 to 10%, and the content of Pr is ２ O ３ The nickel oxide doped target of claim 2, wherein the content of is 0-15% and the total content of the doping substances is 0.1%-20%.

6. A nickel oxide doped target according to any one of claims 1 to 5, obtained by a method of graded plasma spraying.

7. A method for producing a nickel oxide doped target, comprising the steps of: The method includes warm spraying a binding coating layer onto a target backplate or target backpipe, introducing nickel oxide powder and powders of each dopant into respective plasma-generating spray coaters, and simultaneously plasma spraying the nickel oxide and each dopant onto the target backplate or target backpipe to obtain the nickel oxide-doped target, wherein the dopant is selected from at least one of compounds containing one or more of the following elements: Cu, Ca, Cr, Sn, Hg, Pb, Mg, Mn, Ag, Co, and Pr.

8. The doping material is CuO, Cu ２ O, Cu ２ S, CuI, CuSCN, CuGaO ２ , CoO, Cr ２ O ３ , SnO, SnS, Hg ２ O, PbO, AgO, Ag ２ O, MnO, Pr ２ O ３ The method of claim 7, wherein the at least one of the following is selected:

9. The doping material is CuO, Cu ２ O, Cu ２ S, CuI, CuSCN, CuGaO ２ , CoO, Cr ２ O ３ , SnO, SnS, Hg ２ O, PbO, AgO, Ag ２ O, MnO, Pr ２ O ３ The method of claim 8, wherein the at least two of

10. The method of claim 7, wherein the content of the dopant in the nickel oxide doped target is 0.1 wt % to 20 wt %.

11. The content of CuO is 0 to 15%, Cu ... ２ The content of O is 0 to 15%, Cu ２ The content of S is 0 to 15%, the content of CuI is 0 to 20%, the content of CuSCN is 0 to 15%, and CuGaO ２ The content of is 0 to 15%, the content of CoO is 0 to 8%, and the content of Cr is ２ O ３ The content of SnO is 0-15%, the content of SnS is 0-15%, and the content of Hg ２ The O content is 0-15%, the PbO content is 0-15%, the AgO content is 0-15%, and the Ag ２ The content of O is 0 to 15%, the content of MnO is 0 to 10%, and the content of Pr is ２ O ３ The method according to claim 8, wherein the content of is 0-15% and the total content of the doping substances is 0.1%-20%.

12. Use of a nickel oxide doped target according to any one of claims 1 to 6 or a nickel oxide doped target produced by the method according to any one of claims 7 to 11 in the manufacture of a hole transport layer of a perovskite solar cell.

Images