Flow rate adjustment method in substrate processing device, and substrate processing device

Abstract

To suppress variations of processing results among a plurality of liquid processing sections.SOLUTION: Disclosed is a flow rate adjustment method in a substrate processing device comprising a plurality of liquid processing sections each for performing liquid processing by supplying a mixture of sulfuric acid and hydrogen peroxide to a substrate. The flow rate adjustment method includes a discharging step, a measuring step, and an adjusting step. In the discharging step, the mixtures are discharged in a first liquid processing section and a second liquid processing section which are selected from among the plurality of liquid processing sections. In the measuring step, temperature sensors provided in the first liquid processing section and the second liquid processing section are used to measure temperatures of the mixtures regarding the first liquid processing section and the second liquid processing section. In the adjusting step, on the basis of a differential between the temperature of the mixture in the first liquid processing section and the temperature of the mixture in the second liquid processing section, a flow rate of sulfuric acid before being mixed into the mixture is adjusted in the second liquid processing section in such a manner that the differential is kept within an allowable range.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a flow rate adjusting method in a substrate processing apparatus and the substrate processing apparatus. [Background technology]

[0002] 2. Description of the Related Art Conventionally, there has been known a substrate processing apparatus that performs liquid processing by supplying a sulfuric acid hydrogen peroxide mixture (SPM) liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide, to a substrate such as a semiconductor wafer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2009-16497 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of suppressing variation in processing results among a plurality of liquid processing units. [Means for solving the problem]

[0005] A flow rate adjustment method according to one embodiment of the present disclosure is a flow rate adjustment method in a substrate processing apparatus having a plurality of liquid processing sections for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to a substrate to perform liquid processing, and includes a discharging step, a measuring step, and an adjusting step. The discharging step discharges the mixed liquid in a first liquid processing section and a second liquid processing section selected from the plurality of liquid processing sections. The measuring step measures the temperature of the mixed liquid in the first liquid processing section and the second liquid processing section using a temperature sensor provided in each of the first liquid processing section and the second liquid processing section. The adjusting step adjusts the flow rate of sulfuric acid before mixing with the mixed liquid in the second liquid processing section based on a difference between the temperature of the mixed liquid in the first liquid processing section and the temperature of the mixed liquid in the second liquid processing section so as to keep the difference within an allowable range. Effect of the Invention

[0006] According to the present disclosure, it is possible to suppress variation in processing results among a plurality of liquid processing units. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a diagram illustrating a configuration of a processing unit according to the embodiment. [Diagram 3] FIG. 3 is a diagram showing a specific configuration example of a processing liquid supply system in the substrate processing system according to the embodiment. [Figure 4] FIG. 4 is a flowchart showing the procedure of the flow rate adjustment process according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, a flow rate adjusting method for a substrate processing apparatus and a substrate processing apparatus according to the present disclosure (hereinafter, referred to as an "embodiment") will be described in detail with reference to the drawings. Note that the present disclosure is not limited to the embodiment.

[0009] Conventionally, there is known a substrate processing apparatus that performs liquid processing by supplying an SPM liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide, to a substrate such as a semiconductor wafer. Some substrate processing apparatuses include a plurality of liquid processing sections that supply the SPM liquid to the substrate and perform liquid processing.

[0010] However, in a substrate processing apparatus equipped with multiple liquid processing units, the processing results may vary among the multiple liquid processing units due to the variation in temperature of the SPM liquid discharged from each of the multiple liquid processing units. The temperature of the SPM liquid among the multiple liquid processing units depends on the flow rates of sulfuric acid and hydrogen peroxide before being mixed with the SPM liquid in each liquid processing unit, in particular the flow rate of sulfuric acid before being mixed with the SPM liquid.

[0011] Therefore, in order to suppress the variation in temperature of the SPM liquid among a plurality of liquid treatment sections, it is desirable to provide a technique for adjusting the flow rate of sulfuric acid before it is mixed into the SPM liquid.

[0012] The substrate processing apparatus according to the embodiment discharges the SPM liquid in a first liquid processing unit and a second liquid processing unit selected from a plurality of liquid processing units. The substrate processing apparatus according to the embodiment also measures the temperature of the SPM liquid in the first liquid processing unit and the second liquid processing unit using temperature sensors provided in each of the first liquid processing unit and the second liquid processing unit.

[0013] Then, the substrate processing apparatus of the embodiment adjusts the flow rate of sulfuric acid before mixing with the SPM liquid in the second liquid processing unit based on the difference between the temperature of the SPM liquid in the first liquid processing unit and the temperature of the SPM liquid in the second liquid processing unit so as to keep the difference within an acceptable range.

[0014] In this way, in the substrate processing apparatus according to the embodiment, the temperature of the SPM liquid is measured for each liquid processing unit, thereby determining the temperature difference of the SPM liquid among the plurality of liquid processing units, and the flow rate of sulfuric acid before mixing with the SPM liquid is adjusted in each liquid processing unit so as to keep the difference within an acceptable range. Therefore, according to the substrate processing apparatus according to the embodiment, it is possible to suppress the variation in temperature of the SPM liquid among the plurality of liquid processing units, and therefore the variation in processing results among the plurality of liquid processing units.

[0015] <Outline of the substrate processing system> A schematic configuration of a substrate processing system 1 (an example of a substrate processing apparatus) according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing a schematic configuration of the substrate processing system 1 according to an embodiment. In the following, to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.

[0016] 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0017] The carry-in / out station 2 includes a carrier placement section 11 and a transport section 12. A plurality of carriers C are placed on the carrier placement section 11, each of which accommodates a plurality of semiconductor wafers W (hereinafter referred to as wafers W (an example of substrates)) in a horizontal state.

[0018] The transfer section 12 is provided adjacent to the carrier placement section 11, and includes therein a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a substrate holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the substrate holding mechanism.

[0019] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16 (an example of a liquid processing section). The plurality of processing units 16 are provided side by side on both sides of the transport section 15.

[0020] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a substrate holding mechanism that holds the wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using the substrate holding mechanism.

[0021] The processing unit 16 performs a predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

[0022] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading out and executing the programs stored in the storage unit 19.

[0023] Such a program may be recorded in a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

[0024] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 removes the wafer W from the carrier C placed on the carrier placement section 11, and places the removed wafer W on the transfer section 14. The wafer W placed on the transfer section 14 is then removed from the transfer section 14 by the substrate transfer device 17 in the processing station 3, and carried into the processing unit 16.

[0025] The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out of the processing unit 16 by the substrate transfer device 17 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C of the carrier placement section 11 by the substrate transfer device 13.

[0026] <Processing unit overview> Next, the configuration of the processing unit 16 will be described with reference to Fig. 2. Fig. 2 is a diagram showing the configuration of the processing unit 16 according to an embodiment. The processing unit 16 of this embodiment supplies an SPM liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide, to the wafer W. As shown in Fig. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a nozzle 40 (an example of a discharge part), a collection cup 50, a temperature sensor 80, and an SPM supply mechanism 70.

[0027] The chamber 20 accommodates the substrate holding mechanism 30, the nozzle 40, the collection cup 50, and the temperature sensor 80. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a downflow within the chamber 20.

[0028] The substrate holding mechanism 30 includes a holding part 31, a support part 32, and a drive part 33. The holding part 31 holds the wafer W horizontally. The support part 32 is a member extending in the vertical direction, and has a base end rotatably supported by the drive part 33, and supports the holding part 31 horizontally at its tip end. The drive part 33 rotates the support part 32 around a vertical axis. The substrate holding mechanism 30 rotates the support part 32 using the drive part 33 to rotate the holding part 31 supported by the support part 32, thereby rotating the wafer W held by the holding part 31.

[0029] The nozzle 40 supplies the SPM liquid to the wafer W. The nozzle 40 is connected to an SPM supply mechanism 70, which will be described later, and ejects the SPM liquid supplied from the SPM supply mechanism 70 onto the wafer W.

[0030] The collection cup 50 is disposed so as to surround the holder 31, and collects the SPM liquid scattered from the wafer W due to the rotation of the holder 31. A drainage port 51 is formed in the bottom of the collection cup 50, and the SPM liquid collected by the collection cup 50 is discharged from the drainage port 51 to the outside of the processing unit 16. In addition, an exhaust port 52 is formed in the bottom of the collection cup 50, which discharges gas supplied from the FFU 21 to the outside of the processing unit 16.

[0031] The temperature sensor 80 is disposed adjacent to the nozzle 40 above the wafer W, and measures the temperature of the SPM liquid on the surface of the wafer W. Since the temperature sensor 80 is provided in each of the multiple processing units 16, it is possible to measure the temperature of the SPM liquid on the surface of the wafer W for each of the multiple processing units 16.

[0032] <Example of processing liquid supply system configuration> Next, a specific configuration example of a processing liquid supply system in the substrate processing system 1 according to the embodiment will be described with reference to Fig. 3. Fig. 3 is a diagram showing a specific configuration example of the processing liquid supply system in the substrate processing system 1 according to the embodiment.

[0033] 3, the SPM supply mechanism 70 includes, as a supply system for sulfuric acid (H2SO4), a sulfuric acid supply source 71, a sulfuric acid supply path 72 (an example of a first path), a flow meter 73, a flow regulator 74, and a valve 75. The sulfuric acid supply source 71 supplies sulfuric acid at a predetermined temperature (for example, 45°C). The sulfuric acid supply path 72 connects the sulfuric acid supply source 71 to a mixer 79 described below, and the sulfuric acid supplied from the sulfuric acid supply source 71 flows through the sulfuric acid supply path 72.

[0034] The flow meter 73 is provided in the sulfuric acid supply path 72 and measures the flow rate of the sulfuric acid flowing through the sulfuric acid supply path 72. The flow regulator 74 adjusts the flow rate of the sulfuric acid flowing through the sulfuric acid supply path 72. Specifically, the flow regulator 74 adjusts the flow rate of the sulfuric acid flowing through the sulfuric acid supply path 72 based on a set flow rate value set by the control unit 18 so that the measurement value by the flow meter 73 approaches the set flow rate value. The valve 75 opens and closes the sulfuric acid supply path 72.

[0035] Furthermore, SPM supply mechanism 70 includes a hydrogen peroxide (H2O2) supply system, which includes hydrogen peroxide supply source 76, hydrogen peroxide supply path 77, and valve 78. Hydrogen peroxide supply source 76 supplies hydrogen peroxide at room temperature (room temperature). Hydrogen peroxide supply path 77 connects hydrogen peroxide supply source 76 to a mixer 79, which will be described later, and hydrogen peroxide supplied from hydrogen peroxide supply source 76 flows through it. Valve 78 opens and closes hydrogen peroxide supply path 77.

[0036] The SPM supply mechanism 70 also includes a mixer 79. The mixer 79 mixes sulfuric acid supplied from the sulfuric acid supply path 72 and hydrogen peroxide supplied from the hydrogen peroxide supply path 77 at a preset mixing ratio to generate a mixed liquid, that is, an SPM liquid. The generated SPM liquid is supplied to the nozzle 40 and ejected from the nozzle 40.

[0037] 3 illustrates a case in which flowmeter 73 and flow regulator 74 are provided only in sulfuric acid supply path 72, but a flowmeter and flow regulator may also be provided in hydrogen peroxide supply path 77. In such a case, it is preferable to correct the measurement value of the flowmeter provided in hydrogen peroxide supply path 77 in advance so that the measurement value of the flowmeter provided in hydrogen peroxide supply path 77 matches the actual measurement value of the flow rate of hydrogen peroxide flowing through hydrogen peroxide supply path 77.

[0038] <Flow rate adjustment process> Next, the flow rate adjustment process of sulfuric acid before being mixed into the SPM liquid, which is executed by the control unit 18 according to the embodiment, will be described with reference to Fig. 4. Fig. 4 is a flowchart showing the procedure of the flow rate adjustment process according to the embodiment.

[0039] 4 is performed, for example, before performing substrate processing (liquid processing) on ​​wafer W using processing unit 16. Note that the flow rate adjustment process shown in Fig. 4 may be performed at any timing, such as a specified timing or periodic timing, other than the timing before performing substrate processing (liquid processing).

[0040] First, the control unit 18 selects a reference processing unit (an example of a first liquid processing unit) and a target processing unit (an example of a second liquid processing unit) from the multiple processing units 16 (step S101). The reference processing unit is a processing unit 16 among the multiple processing units 16 that serves as a reference for adjusting the flow rate of sulfuric acid. The target processing unit is a processing unit 16 among the multiple processing units 16 that is a target for adjusting the flow rate of sulfuric acid. In the following description, the reference processing unit is referred to as "processing unit 16R" and the target processing unit is referred to as "processing unit 16O."

[0041] First, the control unit 18 causes the substrate transfer device 17 (see FIG. 1) to load the wafer W into the chambers 20 of both of the processing units 16O and 16R, and holds the wafer W using the holding unit 31 of the substrate holding mechanism 30. The wafer W may be a product wafer or a dummy wafer for flow rate adjustment. Thereafter, the control unit 18 rotates the wafer W in the processing units 16O and 16R by rotating the holding unit 31 about a vertical axis using the driving unit 33.

[0042] Next, the control unit 18 sets the set flow rate values ​​in the flow rate regulators 74 of the processing units 16R and 16O to a predetermined "common value" (step S102). As the "common value", for example, a specified value specified by a process recipe for the substrate processing (liquid processing) for the wafer W can be used.

[0043] With a common value set as the set flow rate value in the flow rate adjusters 74 of the processing units 16R, 16O, the control unit 18 opens the valves 75, 78 in the processing units 16R, 16O to eject the SPM liquid from the nozzle 40 onto the wafer W (step S103). When ejection of the SPM liquid onto the wafer W begins, the flow rate adjusters 74 of the processing units 16R, 16O adjust the flow rate of the sulfuric acid flowing through the sulfuric acid supply path 72 so that the measurement value by the flow meter 73 approaches the set flow rate value.

[0044] Next, the control unit 18 acquires the temperature of the SPM liquid in the processing unit 16R and the temperature of the SPM liquid in the processing unit 16O from the temperature sensors 80 in each of the processing units 16R, 16O (step S104).

[0045] Then, based on the difference between the temperature of the SPM liquid in processing unit 16R and the temperature of the SPM liquid in processing unit 16O, control unit 18 adjusts the flow rate of sulfuric acid before mixing with the SPM liquid in processing unit 16O so as to keep the difference within an acceptable range (steps S105 to S107). That is, control unit 18 determines whether the difference between the temperature of the SPM liquid in processing unit 16R and the temperature of the SPM liquid in processing unit 16O (temperature of the SPM liquid in processing unit 16O-temperature of the SPM liquid in processing unit 16R) is within an acceptable range (step S105).

[0046] If the difference is within the allowable range (Yes in step S105), the control unit 18 ends the process without adjusting the flow rate of the sulfuric acid before being mixed into the SPM liquid.

[0047] On the other hand, if the difference is not within the allowable range (No in step S105), the control unit 18 changes the set flow rate value in the flow rate regulator 74 of the processing unit 16O from the "common value" in accordance with the temperature difference (step S106). When the set flow rate value is changed, the flow rate regulator 74 of the processing unit 16O adjusts the flow rate of sulfuric acid flowing through the sulfuric acid supply path 72 so that the value measured by the flow meter 73 approaches the changed set flow rate value. This allows the control unit 18 to adjust the flow rate of sulfuric acid (i.e., sulfuric acid before being mixed with the SPM liquid) flowing through the sulfuric acid supply path 72 of the processing unit 16O so that the difference converges within the allowable range.

[0048] Here, as a result of extensive research, the inventors of the present application found that the relationship between the temperature of the SPM liquid in each processing unit 16, the temperature of the sulfuric acid before mixing, and the flow rates of the sulfuric acid and hydrogen peroxide before mixing can be expressed by the following mathematical formula (1). (Temperature of SPM liquid in each processing unit 16) =α+β (temperature of sulfuric acid before mixing)+γ (flow rate of hydrogen peroxide before mixing) / {(flow rate of sulfuric acid before mixing)+(flow rate of hydrogen peroxide before mixing)} (1) Here, α, β, and γ are coefficients determined by analysis, experiment, or the like.

[0049] The following points were confirmed from equation (1): The temperature of the SPM liquid in each processing unit 16 increases when the flow rate of sulfuric acid (sulfuric acid flowing through the sulfuric acid supply path 72) before being mixed with the SPM liquid decreases. The temperature of the SPM liquid in each processing unit 16 drops when the flow rate of sulfuric acid before being mixed with the SPM liquid (sulfuric acid flowing through the sulfuric acid supply path 72) increases. That is, from formula (1), it can be seen that the temperature of the SPM liquid in each processing unit 16 can be increased or decreased by increasing or decreasing the flow rate of the sulfuric acid (sulfuric acid flowing through the sulfuric acid supply path 72) before being mixed with the SPM liquid.

[0050] For example, if the temperature difference is less than zero (the temperature of the SPM liquid in processing unit 16O is lower than the temperature of the SPM liquid in processing unit 16R), control unit 18 reduces the set flow rate value in flow rate regulator 74 of processing unit 16O. When the set flow rate value decreases, flow rate regulator 74 of processing unit 16O reduces the flow rate of sulfuric acid passing through sulfuric acid supply path 72 so that the measurement value by flowmeter 73 approaches the reduced set flow rate value. This causes the temperature of the SPM liquid in processing unit 16O to rise, and the difference with the temperature of the SPM liquid in processing unit 16R approaches zero.

[0051] On the other hand, if the temperature difference is greater than zero (the temperature of the SPM liquid in processing unit 16O is higher than the temperature of the SPM liquid in processing unit 16R), control unit 18 increases the set flow rate value in flow rate regulator 74 of processing unit 16O. As the set flow rate value increases, flow rate regulator 74 of processing unit 16O increases the flow rate of sulfuric acid passing through sulfuric acid supply path 72 so that the measurement value by flowmeter 73 approaches the increased set flow rate value. This causes the temperature of the SPM liquid in processing unit 16O to drop, and the difference with the temperature of the SPM liquid in processing unit 16R approaches zero.

[0052] In this way, control unit 18 grasps the difference in temperature of the SPM liquid between processing unit 16R and processing unit 16O, and adjusts the flow rate of sulfuric acid before mixing with the SPM liquid in processing unit 16O so as to keep this difference within an acceptable range. Therefore, it is possible to suppress the variation in temperature of the SPM liquid between processing unit 16R and processing unit 16O, and therefore it is possible to suppress the variation in the processing results between processing unit 16R and processing unit 16O.

[0053] After changing the set flow rate value in the flow rate regulator 74 of the processing unit 16O, the control unit 18 corrects the measurement value of the flow meter 73 of the processing unit 16O to a "common value" (step S107). This makes it possible to cancel errors in the measurement value of the flow meter 73 caused by individual differences in the flow meters 73 between the processing units 16.

[0054] Thereafter, control unit 18 returns the process to step S104, and repeats changing the set flow rate value (step S106) and correcting the measurement value by flowmeter 73 (step S107) until the temperature difference converges within the allowable range (step S105 No). Then, when the temperature difference converges within the allowable range (step S105 Yes), control unit 18 ends the process.

[0055] As described above, the flow rate adjustment method according to the embodiment is a flow rate adjustment method in a substrate processing apparatus (for example, substrate processing system 1) including a plurality of liquid processing sections (for example, processing units 16) that perform liquid processing by supplying a mixed liquid of sulfuric acid and hydrogen peroxide (for example, SPM liquid) to a substrate (for example, wafer W), and includes a discharging step, a measuring step, and an adjusting step. The discharging step discharges the mixed liquid in a first liquid processing section (for example, processing unit 16R) and a second liquid processing section (for example, processing unit 16O) selected from the plurality of liquid processing sections. The measuring step measures the temperature of the mixed liquid in the first liquid processing section and the second liquid processing section using a temperature sensor (for example, temperature sensor 80) provided in each of the first liquid processing section and the second liquid processing section. The adjusting step adjusts the flow rate of sulfuric acid before mixing with the mixed liquid in the second liquid processing section based on the difference between the temperature of the mixed liquid in the first liquid processing section and the temperature of the mixed liquid in the second liquid processing section so as to keep the difference within an allowable range. As a result, according to the flow rate adjusting method of the embodiment, it is possible to suppress variation in processing results among a plurality of liquid processing units.

[0056] Each of the liquid processing units may have a first path (sulfuric acid supply path 72 as an example), a second path (hydrogen peroxide supply path 77 as an example), a mixer (mixer 79 as an example), a discharger (nozzle 40 as an example), a flow meter (flow meter 73 as an example), and a flow regulator (flow regulator 74 as an example). The first path passes sulfuric acid. The second path passes hydrogen peroxide. The mixer mixes the sulfuric acid from the first path and the hydrogen peroxide from the second path to generate a mixed liquid. The discharger discharges the mixed liquid generated by the mixer onto the substrate. The flow meter is provided in the first path and measures the flow rate of sulfuric acid passing through the first path. The flow regulator is provided in the first path and adjusts the flow rate of sulfuric acid passing through the first path based on a set flow rate value to bring the measurement value of the flow meter closer to the set flow rate value. Furthermore, the flow rate adjustment method according to the embodiment may include a step of setting the set flow rate values ​​in the flow rate adjusters of the first liquid processing unit and the second liquid processing unit to a predetermined common value before the discharge step. The discharge step may discharge the mixed liquid from the discharge unit in a state in which the set flow rate values ​​in the flow rate adjusters of the first liquid processing unit and the second liquid processing unit are set to a common value. The adjusting step may adjust the flow rate of sulfuric acid flowing through the first path of the second liquid processing unit by changing the set flow rate value in the flow rate adjuster of the second liquid processing unit from the common value in accordance with the difference. As a result, the flow rate adjustment method according to the embodiment can suppress variation in processing results among a plurality of liquid processing units.

[0057] In addition, the measuring step may measure the temperature of the mixed liquid on the surface of the substrate using a temperature sensor disposed adjacent to the discharge unit. In this way, according to the flow rate control method of the embodiment, the temperature of the mixed liquid on the surface of the substrate can be easily measured.

[0058] <Modification> In the above embodiment, the temperature sensor 80 is disposed adjacent to the nozzle 40, but the position of the temperature sensor 80 is not limited to this. For example, the temperature sensor 80 may be disposed in the nozzle 40 or in a pipe connecting the mixing unit 79 and the nozzle 40. In this case, the measuring step may measure the temperature of the SPM liquid before it is discharged from the nozzle 40 using the temperature sensor 80 disposed in the nozzle 40 or in a pipe connecting the mixing unit 79 and the nozzle 40. This makes it possible to easily measure the temperature of the mixed liquid before it is discharged.

[0059] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0060] 1. Substrate Processing System 16, 16O, 16R Processing Unit 18 Control Unit 19 Memory section 40 Nozzles 72 Sulfuric acid supply route 73 Flow meter 74 Flow regulator 77 Hydrogen peroxide supply pathway 79 Mixing section 80 Temperature Sensor W wafer

Claims

1. 1. A flow rate adjusting method for a substrate processing apparatus including a plurality of liquid processing sections for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to a substrate for liquid processing, comprising: discharging the mixed liquid in a first liquid processing unit and a second liquid processing unit selected from the plurality of liquid processing units; measuring temperatures of the mixed liquid in the first liquid processing section and the second liquid processing section using temperature sensors provided in the first liquid processing section and the second liquid processing section; adjusting a flow rate of sulfuric acid before mixing with the mixed liquid in the second liquid treatment section based on a difference between a temperature of the mixed liquid in the first liquid treatment section and a temperature of the mixed liquid in the second liquid treatment section so as to keep the difference within an allowable range; A flow rate adjusting method comprising:

2. Each of the plurality of liquid treatment sections includes: a first path through which sulfuric acid flows; a second pathway for passing hydrogen peroxide; and a mixing section that mixes the sulfuric acid from the first path and the hydrogen peroxide from the second path to generate a mixed liquid; a discharge unit that discharges the mixed liquid generated by the mixing unit onto a substrate; a flow meter provided in the first path and configured to measure a flow rate of sulfuric acid flowing through the first path; a flow rate regulator that is provided in the first path and that adjusts the flow rate of the sulfuric acid flowing through the first path based on a set flow rate value that is set so that a value measured by the flow meter approaches the set flow rate value; having a step of setting the set flow rate values ​​in the flow rate regulators of the first liquid processing section and the second liquid processing section to a predetermined common value before the step of discharging the liquid. Further comprising: The step of discharging includes: discharging the mixed liquid from the discharge portion in a state in which the common value is set as the set flow rate values ​​in the flow rate adjusters of the first liquid processing portion and the second liquid processing portion; The adjusting step includes: The flow rate of the sulfuric acid flowing through the first path of the second liquid treatment section is adjusted by changing the set flow rate value in the flow rate regulator of the second liquid treatment section from the common value in accordance with the difference. The flow rate adjusting method according to claim 1 .

3. The adjusting step includes: After changing the set flow rate value, the measurement value of the flow meter of the second liquid processing unit is corrected to the common value. The flow rate adjusting method according to claim 2 .

4. The measuring step includes: The temperature sensor disposed adjacent to the discharge portion is used to measure the temperature of the mixture on the surface of the substrate. The flow rate adjusting method according to claim 2 .

5. The measuring step includes: The temperature of the mixed liquid before being discharged from the discharge portion is measured using the temperature sensor disposed in the pipe connecting the mixing portion and the discharge portion or in the discharge portion. The flow rate adjusting method according to claim 2 .

6. a plurality of liquid processing units for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to a substrate for liquid processing; a temperature sensor provided in each of the liquid processing sections for measuring a temperature of the mixed liquid; Control unit and Equipped with The control unit is discharging the mixed liquid in a first liquid processing unit and a second liquid processing unit selected from the plurality of liquid processing units; measuring temperatures of the mixed liquid in the first liquid processing section and the second liquid processing section by using the temperature sensors provided in the first liquid processing section and the second liquid processing section; adjusting a flow rate of sulfuric acid before mixing with the mixed liquid in the second liquid treatment section based on a difference between a temperature of the mixed liquid in the first liquid treatment section and a temperature of the mixed liquid in the second liquid treatment section so as to keep the difference within an allowable range; The substrate processing apparatus causes each unit to execute a flow rate adjustment method including the steps of:

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