Device for collecting reaction by-products in semiconductor processing by inducing thermal decomposition in high temperature range and oxidation reaction in low temperature range

Abstract

To provide a device for collecting reaction by-products in semiconductor processing by inducing thermal decomposition in the high temperature range and oxidation reaction in the low temperature range.SOLUTION: A device according to the present invention includes a first dispersion and collection unit that collects reaction by-products, a collection box that accommodates an exhaust gas in an internal space formed with a low temperature region and discharging it downward to load the powdered oxide collected, a box-type collection unit installed inside the collection box and consisting of a collection plate unit configured in multiple stages with a plurality of collection plates spaced apart from each other vertically to grow and collect solid high-K materials as powdered oxides through an oxidation reaction in the low temperature region, a cooling pad unit configured to circulate and discharge cooling water supplied from the outside to maximize the area of the low temperature region in the box-type collection unit, and a second dispersion and collection unit that collects reaction by-products while dispersing the exhaust gas that has passed through the box-type collection unit downward.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a reaction by-product collection device for semiconductor processes that induces pyrolysis in a high temperature region and oxidation reaction in a low temperature region, and more particularly, to a reaction by-product collection device that collects High K materials contained in a precursor for deposition by an oxidation process of depositing a semiconductor insulating film using a High K (dielectric constant) material for miniaturization of semiconductor circuits by pyrolysis and oxidation reaction when the High K deposition precursor is discharged in exhaust gas after the deposition process. [Background technology]

[0002] Generally, the semiconductor manufacturing process is largely composed of a fabrication process and an assembly process. The fabrication process is a process in which a thin film is deposited on a wafer in various process chambers, and the deposited thin film is selectively etched repeatedly to process a specific pattern to manufacture a semiconductor chip, while the assembly process is a process in which the chips manufactured in the fabrication process are separated into individual chips and then combined with a lead frame to assemble them into a finished product.

[0003] At this time, the process of depositing a thin film on the wafer or etching a thin film deposited on the wafer is performed at high temperatures by injecting various semiconductor deposition and etching precursors and reactive gases into a process chamber through a gas injection system, and during the process, a large amount of various flammable gases and harmful gases containing corrosive foreign matter and toxic components are generated inside the process chamber.

[0004] In order to purify and release such harmful gases, a scrubber is installed downstream of the vacuum pump that creates a vacuum in the semiconductor manufacturing process chamber to purify the exhaust gas discharged from the process chamber and then release it into the atmosphere.

[0005] However, since scrubbers mainly purify only gaseous reaction by-products, if the reaction by-products solidify after being discharged outside the process chamber, problems may occur, such as an increase in exhaust pressure due to adhesion to the exhaust line, induction of pump failure due to inflow into the vacuum pump, and wafer contamination due to the backflow of harmful gases into the process chamber.

[0006] For this reason, most semiconductor manufacturing equipment is provided with a reaction by-product collecting device between the process chamber and the vacuum pump, which condenses the exhaust gas and collects it in the form of powder or solid matter.

[0007] Meanwhile, in order to solve the problem of current leakage in semiconductor insulating films caused by the miniaturization of semiconductor circuits as the semiconductor integration density increases, the precursors for the deposition process of gate oxide films or capacitor oxide films supplied to the process chamber are gradually changing from the existing SiO2 deposition precursors to deposition precursors for high K materials with high dielectric constants (e.g. Al2O3, HfO2, ZrO2).

[0008] Therefore, in order to prevent breakdown of the vacuum pump, the high K substances, which are solid substances contained in the exhaust gas containing these precursors, must be collected and then discharged.

[0009] However, existing general collectors for collecting solid materials are structured such that the exhaust gas is heated by a heater to prevent the exhaust gas from being trapped at the inlet and clogging, or in the case of exhaust gas that is not at risk of clogging, the exhaust gas is allowed to flow in without being heated by a heater, and then a collection process is performed in which solid reaction by-products are agglomerated and collected on the surface of the collection plate of the internal collector. However, there is a structural problem in that it is difficult to efficiently collect solid high-K materials, such as Al, Hf, and Zr, contained in the precursors for high-K deposition contained in the exhaust gas.

[0010] In other words, when the aluminum oxide deposition precursor TMA (trimethylaluminum), the hafnium oxide deposition precursor TEMAHf (Tetrakis(ethylmethylamido)hafnium), and the zirconium oxide deposition precursor Cp-Zr [Cyclopentadienyl Tris(dimethylamino)Zirconium] are contained in the exhaust gas and discharged, it is difficult to efficiently collect the high K materials that are deposited by the oxidation reaction, and a structural problem occurs in that they are discharged outside the collection device.

[0011] However, there is still no collection device capable of efficiently collecting the High K material contained in the High K deposition precursor, and this problem needs to be solved. [Prior art documents] [Patent documents]

[0012] [Patent Document 1] Korean Patent No. 10-1806480 (December 1, 2017) [Patent Document 2] Korean Patent No. 10-2154196 (September 3, 2020) [Patent Document 3] Korean Patent Registration No. 10-2311930 (October 6, 2021) [Patent Document 4] Korean Patent Registration No. 10-2228180 (March 10, 2021) Summary of the Invention [Problem to be solved by the invention]

[0013] The present invention has been made to solve the above problems, and its objective is to provide a reaction by-product collection device that, when a precursor for High K deposition supplied to a process chamber for an oxidation process for depositing a semiconductor dielectric film with a High K material having a high dielectric constant for miniaturization of semiconductor circuits is discharged together with exhaust gas, thermally decomposes the High K material at the inlet of the collection device using the high temperature of a heater, and then induces an oxidation reaction in a box-type collection unit having a low temperature region formed by a cooling pad unit, grows it into a powdered oxide, and collects it.

[0014] Another object of the present invention is to provide a reaction by-product collecting device, which includes two or more box-type collecting parts, each of which is composed of an inner collecting plate part and an outer collecting box surrounding it, and is arranged horizontally at a certain distance from each other, and a square-shaped cooling pad part is arranged on the outer periphery of each box-type collecting part and in the space between the box-type collecting parts to circulate and supply cooling water, thereby maximizing a low-temperature region, and a low-temperature region thermally conducted to the collecting box of the box-type collecting part is uniformly formed on the collecting plate part housed therein, so that a highly efficient oxidation reaction occurs, and a high-K material is deposited and collected, and then loaded inside the collecting box.

[0015] Another object of the present invention is to provide a reaction by-product collection device having a cooling pad section in which three cooling water storage pads are connected by a connecting pipe to form a uniform low-temperature region in each of the two separated box-type collection sections, and a horizontal baffle plate and a plurality of vertical baffle plates are installed inside each cooling water storage pad to form a flow path so that the flow of cooling water is uniformly circulated while the inflowing cooling water is circulated and discharged in sequence, and the baffle plate is fixed in position by partially protruding both sides of the baffle plate outside the cooling water storage pad, and a vortex is generated in the flow of exhaust gas flowing along the cooling water storage pad to retard it, thereby increasing the cooling efficiency.

[0016] Another object of the present invention is to provide a reaction by-product collecting device in which the collecting plates constituting the collecting plate part installed inside the collecting box of the box-type collecting part are arranged in multiple vertical stages, and the size and shape of the holes formed in the collecting plates of each stage are different, so that the collected reaction by-products in the form of powder oxides are not directly discharged to the bottom, but are collected in multiple stages while changing the flow path through the collecting plates of each stage and are loaded inside the collecting box, and a mesh filter outlet protruding into the housing is formed above the lower outlet of the housing to minimize direct outflow of the reaction by-products, and durability is improved by removing solid materials flowing into the vacuum pump in advance.

[0017] Another object of the present invention is to provide a reaction by-product collection device that increases the chemical reactivity in the box-type collection section by preventing initial condensation of exhaust gas and minimizing heat generation by the heater, by making the vertical height of the diffuser in the heater section relatively higher than that of conventional diffusers and by making the total number of radially arranged diffusers relatively smaller than that of conventional diffusers, thereby increasing the high-temperature contact of the inflowing exhaust gas and maximizing and supplying the thermal decomposition of precursors while minimizing heat generation by the heater.

[0018] Another object of the present invention is to provide a reaction by-product collection device in which the inward protruding length of the inner wall collection plates formed in multiple stages in the lower region of the inner wall of the housing is greater than that of the inner wall collection plates formed in multiple stages in the upper region of the inner wall of the housing, and multiple holes are formed in each inner wall collection plate, thereby preventing exhaust gas from stagnating and maintaining a smooth downward flow. [Means for solving the problem]

[0019] In order to achieve the above object and to eliminate the drawbacks of the conventional technology, the present invention provides a collection device for collecting reaction by-products by heating exhaust gas discharged from a process chamber with a heater and storing the gas in a housing, the collection device comprising: a first dispersion and collection unit that disperses exhaust gas, which contains high-K substances thermally decomposed in the heater unit and flows in through the gas inlet of the housing, into the lower box-shaped collection unit and collects reaction by-products; a collection box for storing the exhaust gas flowing into an internal space formed with a low temperature region and discharging the exhaust gas downward to load the powdered oxides collected therein; and a box-type collection section including a collection plate section arranged in multiple stages with a plurality of collection plates spaced apart vertically so as to grow and collect the solid high K material as powdered oxides by oxidation reaction in the low temperature region; A cooling pad unit configured to circulate and then discharge cooling water supplied from an outside source so as to maximize the area of ​​the low-temperature region in the box-type collection unit; This can be achieved by providing a reaction by-product collection device for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region, the device comprising: a second dispersion and collection section that collects reaction by-products while dispersing exhaust gas that has passed through the box-type collection section downward.

[0020] In a preferred embodiment, the box-type collection section is configured to be arranged at least two at a certain interval in the width direction, The cooling pad section is configured such that a first cooling water storage pad, a second cooling water storage pad, and a third cooling water storage pad are connected to sequentially store and supply cooling water, and is characterized in that one cooling water storage pad is disposed between the two box-shaped collection sections and on the outer side thereof.

[0021] In a preferred embodiment, the collection box is made of a metal material and has a rectangular box structure with a plurality of inlet holes formed on an upper surface and a plurality of exhaust holes formed on a lower surface, and is configured to form a uniform low-temperature region by a heat source provided by a cooling pad unit, Guide plates are formed on both sides of the upper surface up to the lower surface of the first dispersion and collection unit, and are configured to guide the flow of exhaust gas toward the inlet hole and collect reaction by-products, One side of the exhaust gas turbine is characterized in that a plurality of vertical plates protrude in a lateral direction and are configured to collect reaction by-products from the exhaust gas flowing along the lateral direction.

[0022] In a preferred embodiment, the collection plate section is configured in multiple stages with a plurality of collection plates spaced apart from one another on vertical support bases on both sides, and each collection plate is configured in multiple stages with a plurality of square or circular holes formed therein, and the square or circular holes are smaller and more numerous in the lower collection plates.

[0023] In a preferred embodiment, the cooling pad section is configured such that the first cooling water storage pad, the second cooling water storage pad, and the third cooling water storage pad are connected by a connecting pipe so that the cooling water is stored and supplied in sequence, and the internal space is divided into an upper layer and a lower layer by a horizontal baffle plate of a certain length to form a flow path through which the cooling water flows in sequence, and the upper layer and the lower layer each have a plurality of vertical baffle plates alternately installed at a certain interval so as to be shifted up and down, forming a zigzag flow path for the cooling water.

[0024] In a preferred embodiment, the horizontal and vertical baffle plates are characterized in that they form a plurality of low-temperature vortex pieces in which a portion of the side surface of the plate protrudes outward from the cooling water storage pad at regular intervals to generate vortexes and increase the low-temperature area.

[0025] In a preferred embodiment, the housing has a rectangular box-shaped inner wall and a plurality of inner wall collection plates formed in multiple stages in the upper and lower regions along the inner wall, the inner wall collection plates formed in multiple stages in the lower region protrude longer than the inner wall collection plates in the upper region, and a plurality of holes are formed to generate vortexes and collect the vortexes, The housing is characterized in that a mesh filter outlet is provided on the upper side of a gas exhaust port formed at one location on the lower plate, and the exhaust gas is configured to flow through a mesh filter formed on the periphery and then discharged from the gas exhaust port.

[0026] In a preferred embodiment, the cooling water supplied to the cooling pad section and discharged after circulation flows in through a cooling water inlet installed on the upper plate of the housing, flows into a first cooling water storage pad of the cooling pad section connected to an upper cooling bar installed on the upper part of the outer surface of the housing, is stored and circulated through a second cooling water storage pad and a third cooling water storage pad in sequence to provide a low temperature area in the box-shaped collector, is discharged to a lower cooling bar installed on the lower part of the outer surface of the housing connected to the third cooling water storage pad, flows upward, is supplied to a cooling water flow path formed in the upper plate, and is circulated to cool the upper plate of the housing, and is then discharged through a cooling water outlet.

[0027] In a preferred embodiment, the heater unit includes a heater that thermally decomposes at high temperature a precursor for high K deposition for an oxidation process or a precursor for oxide deposition contained in the exhaust gas to increase chemical reactivity, and a diffuser that is radially installed on the upper part of the heater and disperses the heated exhaust gas in a lateral direction while increasing high temperature contact, The heater is configured to heat the precursor contained in the inflowing exhaust gas to 100°C to 330°C if the precursor is TMA, to 300°C or higher if the precursor is TEMAHf, and to 200°C or higher if the precursor is Cp-Zr, thereby causing the precursor to be thermally decomposed.

[0028] In a preferred embodiment, the first dispersion collection section is composed of a square plate suspended from the upper plate of the housing, and a plurality of square holes are arranged in an area corresponding to the box-shaped collection section area located at the bottom, and the remaining area is formed of a guide surface that guides the flow of exhaust gas that is dispersed to the side and flows along the wall of the housing in the direction of the square holes.

[0029] In a preferred embodiment, the second dispersion and collection section is composed of a square plate having an area in which a plurality of square holes for guiding exhaust gas are arranged at the bottom and a guide surface area for guiding exhaust gas from the periphery to the square holes, and the square holes are formed so that the opening area is small at the center and the opening area is larger toward the periphery, The square plate is configured to support the weight of the box-type collecting part and the cooling pad part at a certain distance from each other by a spaced support installed on a lower plate.

[0030] In a preferred embodiment, a plurality of vertical plates are provided diagonally opposite to each other on the upper surface of the rectangular plate, protruding upward, and welded to the side surfaces of two collection boxes to collect reaction by-products contained in exhaust gas flowing along the side direction, A plurality of support plates are formed at multiple locations on one side of the upper surface, and are configured to support a load while separating the lower portions of the first cooling water storage pad, the second cooling water storage pad, and the third cooling water storage pad of the cooling pad section by a certain distance.

[0031] In a preferred embodiment, a guide plate is vertically protruded downward from the bottom surface of the square plate between each of the square holes arranged in a plurality of rows, and is configured to uniformly guide the flow of the descending exhaust gas and collect reaction by-products. Effect of the Invention

[0032] The reaction by-product collection device according to the present invention having the above-mentioned features has the effect of collecting only the solid reaction by-products in the precursor contained in the exhaust gas when a High K deposition precursor for an oxidation process, which is a High K material with a high dielectric constant for miniaturization of semiconductor circuits and is supplied to a process chamber in which a semiconductor is being manufactured for a semiconductor insulating film process, is discharged in the exhaust gas after the deposition process. The precursor is heated by a heater at the inlet of the collection device to pyrolyze the solid High K material contained in the precursor, and the exhaust gas flow is guided to the box-shaped collection unit and cooled by the cooling pad unit to a temperature required for the High K material to grow as a powdered oxide, thereby inducing an oxidation reaction in the low temperature region to cause growth, thereby collecting only the solid reaction by-products in the precursor contained in the exhaust gas.

[0033] In addition, the present invention provides a box-type trapping section that is composed of an inner trapping plate and an outer trapping box that encases it, and two or more box-type trapping sections are arranged horizontally at a certain distance from each other. Then, a square-shaped cooling pad is arranged on the outer periphery of each box-type trapping section and in the space between the box-type trapping sections, and cooling water is circulated and supplied to maximize the low temperature area. The low temperature area that is thermally conducted to the trapping box of the box-type trapping section is uniformly formed in the trapping plate section housed inside, and a highly efficient oxidation reaction occurs, resulting in the deposition and collection of high K materials.

[0034] In addition, in order to form a uniform low-temperature region in each box-type collection section where the cooling pad section is separated into two, three cooling water storage pads are connected by a connecting pipe, and the inflow cooling water is circulated and discharged in sequence, so that each cooling water storage pad maintains a uniform low-temperature region. In order to achieve this, a horizontal baffle plate and a plurality of vertical baffle plates are installed inside each cooling water storage pad to form a flow path, so that the cooling water flows from one layer of the lower layer or the upper layer to the other layer and flows in a zigzag manner to one layer of the adjacent cooling water storage pad, thereby circulating and discharging the cooling water uniformly. Parts of both side portions of the baffle plate are protruded outside the cooling water storage pad to fix the position of the baffle plate, and vortexes are generated in the flow of exhaust gas flowing along the cooling water storage pad to retard it, thereby increasing the cooling efficiency.

[0035] In addition, the present invention has a box-type collector having multiple vertical collection plates that are arranged in a collection plate section installed inside the collection box, and the collection plates of each section have holes of different sizes and shapes, so that the collected reaction by-products in the form of powdered oxides are not directly discharged to the bottom, but are collected in multiple stages while changing the flow path through the collection plates of each section and are then stacked inside the collection box. A mesh filter outlet protruding into the housing is formed above the lower outlet of the housing, thereby minimizing direct outflow of the reaction by-products and improving durability by removing solid materials that flow into the vacuum pump in advance.

[0036] In addition, the present invention has an effect of increasing the chemical reactivity in the box-type collector by preventing exhaust gas from condensing while increasing the high-temperature contact of the inflowing exhaust gas and maximizing and supplying the thermal decomposition of the precursor, by making the vertical height of the diffuser located above the heater relatively higher than that of the conventional diffuser and by making the total number of radially arranged diffusers relatively smaller than that of the conventional diffuser.

[0037] In addition, the present invention has the effect of making the inward protruding length of the inner wall collection plate formed in multiple stages in the lower region of the housing greater than that of the inner wall collection plate formed in multiple stages in the upper region, and by forming multiple holes in each inner wall collection plate, the flow of exhaust gas is not stagnated and a smooth flow in the downward direction is maintained.

[0038] INDUSTRIAL APPLICABILITY As described above, the present invention is a useful invention having various effects, and is expected to have great industrial application. [Brief description of the drawings]

[0039] [Figure 1] FIG. 2 is an exploded perspective view of a reaction by-product collection device according to an embodiment of the present invention. [Diagram 2] 1 is a perspective view showing the inside of a reaction by-product collecting device according to an embodiment of the present invention; [Diagram 3] 1 is a cross-sectional view of a reaction by-product collecting device according to an embodiment of the present invention; [Figure 4] FIG. 2 is an exploded perspective view showing the structure of a box-type collector according to one embodiment of the present invention. [Diagram 5] FIG. 2 is a perspective view showing a coupling structure of a box-type collector according to an embodiment of the present invention. [Figure 6] FIG. 2 is an exploded perspective view showing a structure of a cooling pad portion according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0040] The configuration and operation of the embodiment of the present invention will be described in detail below with reference to the accompanying drawings. Note that, in describing the present invention, if it is determined that a detailed description of related publicly known functions or configurations may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

[0041] FIG. 1 is an exploded perspective view of a reaction by-product collecting device according to one embodiment of the present invention, FIG. 2 is a perspective view showing the interior of a reaction by-product collecting device according to one embodiment of the present invention, FIG. 3 is an exemplary cross-sectional view of a reaction by-product collecting device according to one embodiment of the present invention, FIG. 4 is an exploded perspective view showing the structure of a box-type collecting unit according to one embodiment of the present invention, FIG. 5 is a perspective view showing the connection structure of a box-type collecting unit according to one embodiment of the present invention, and FIG. 6 is an exploded perspective view showing the structure of a cooling pad unit according to one embodiment of the present invention.

[0042] As shown in the figure, the collection device according to the present invention is a reaction by-product collection device installed on an exhaust line between a process chamber and a vacuum pump to collect only solid reaction by-products of a precursor contained in exhaust gas when a High K deposition precursor for an oxidation process is supplied to a process chamber in which a semiconductor is being manufactured for a semiconductor dielectric film process using a High K material having a high dielectric constant for miniaturization of semiconductor circuits, and is discharged after the deposition process. The collection device comprises a housing 1, a heater unit 2, a first dispersion collection unit 3, a box-type collection unit 4, a cooling pad unit 5 and a second dispersion collection unit 6.

[0043] The collection device according to the present invention is manufactured using materials such as titanium, stainless steel, and aluminum so as to prevent corrosion caused by exhaust gas discharged from the process chamber.

[0044] The housing 1 is a hollow rectangular box, and is configured to store exhaust gas containing High K materials whose chemical reactivity has increased as a result of the thermal decomposition of the High K deposition precursor through the heater unit 2 located at the top side of the housing 1 and to be collected as powdered oxide through an oxidation reaction at a low temperature when the exhaust gas flows into the box-shaped collection unit 4 installed inside.

[0045] The top of the housing is opened to accommodate and install the box-shaped collector, and then the top plate is placed over the box and fixed using bolts or other fastening means.

[0046] The inner wall 11 of the housing is configured by forming a plurality of inner wall collection plates 111 protruding inward along the periphery in multiple stages at regular intervals from one another.

[0047] In this case, the inner wall collection plate formed in multiple stages in the lower region has a greater inward protruding length than the inner wall collection plate formed in the upper region of the inner wall of the housing, and by forming a plurality of holes 111a on the surface, the flow of exhaust gas is not stagnated and a smooth flow in the downward direction is maintained.

[0048] When such an inner wall collection plate 111 is provided, the exhaust gas flowing into the inside of the housing collides with the plate, generating a vortex, which slows down the flow of the exhaust gas, thereby increasing the efficiency of collection of reaction by-products.

[0049] The upper plate 12 forming the upper part of the housing functions as a lid covering the top of the housing, which is open at the top, and has a gas inlet 121 protruding upward to allow exhaust gas to flow in, and is configured to receive a supply of exhaust gas discharged from a process chamber (not shown).

[0050] The upper plate is also provided with a heater power supply unit 23 including a temperature sensor for supplying power to a heater unit installed on the bottom surface thereof and for measuring the temperature to control the power supply in accordance with the internal temperature.

[0051] In addition, a cooling water flow passage 122 is formed in a groove shape on the upper surface of the upper plate so as to prevent the housing from being heated in response to the operation of a heater installed on the lower side of the upper plate inside the housing. The upper part of the cooling water flow passage is configured to be covered with a flow passage cover 123. In this case, although not shown, the flow passage cover may be fastened including a sealing process for watertightness, and the fastening method may be a fitting type, a welding type, a bolt fastening type, or the like.

[0052] The cooling water flow passage 122 is configured so that cooling water supplied from an external cooling water tank (not shown) flows in through a cooling water inlet 124 and is then discharged from a cooling water outlet 125 to circulate, and the cooling water flow passages are not connected to each other but have a boundary so that the inflowing cooling water and the outflowing cooling water do not mix with each other. The cooling water used may be water or a refrigerant.

[0053] At this time, the cooling water flowing in from the cooling water inlet 124 does not flow directly along the cooling water flow path 122, but is supplied downward through the cooling water pipe 128, and flows into the first cooling water storage pad 51 of the cooling pad unit 5 installed inside the housing through an inlet pipe connected to the upper cooling bar 126 installed at the upper part of the outer surface of the housing, and is stored and circulated through the second cooling water storage pad 52 and the third cooling water storage pad 53 in sequence to provide a low temperature area for the box-type collector 4, and is discharged to the lower cooling bar 127 formed at the lower part of the outer surface of the housing through a discharge pipe connected to the third cooling water storage pad 53, and flows upward through the cooling water pipe 128, and is supplied to the cooling water flow path 122 formed in the upper plate, and is circulated to cool the upper plate of the housing, and is finally discharged through the cooling water outlet 125.

[0054] In addition, a plurality of heater mounting bases 129 for fixing the heater section 2 so as to be suspended therefrom are provided on the bottom surface of the upper plate.

[0055] Further, a plurality of collection unit mounting stands 129a are provided on the bottom surface of the upper plate to fix the first dispersion collection unit 3 so as to be suspended therefrom. The collection unit mounting stands 129a are longer than the heater mounting stand 129, so that the collection unit mounting stand 129a is positioned lower than the heater unit.

[0056] The lower plate 13 forming the lower part of the housing has a gas outlet 131 formed in one place in the downward direction and is configured to be used as a passage for discharging exhaust gas from which reaction by-products have been removed, and a mesh filter outlet 132 protruding into the inside of the housing is provided above the lower outlet to minimize direct downward outflow of reaction by-products.

[0057] The mesh filter outlet 132 is a cylinder with the top closed and the bottom open, and the periphery of the cylinder is formed with a mesh filter 132a, so that even if reaction by-products are present in the exhaust gas flowing in from the top side, they are not directly discharged from the lower gas outlet 131 of the lower plate because the top is closed, but flow along with the flow of exhaust gas flowing in the lateral direction and are collected in the mesh filter formed on the periphery of the mesh filter outlet. This minimizes the outflow of reaction by-products contained in the exhaust gas.

[0058] Further, distant support stands 133 are formed protruding upward near each vertex of the upper surface of the lower plate 13. At least four distant support stands 133 are fastened to the lower part of the second dispersion collection part 6 located at the upper part, and support the load of the box-type collection part 4, the cooling pad part 5, and the second dispersion collection part 6 while being spaced a certain height from the upper surface of the lower plate.

[0059] In addition, this height separation ensures that a space is secured between the lower plate 13 and the second dispersion and collection section 6 in which the mesh filter outlet 132 is located, so that the flow of exhaust gas dispersed by the second dispersion and collection section 6 and flowing downward flows into the mesh filter outlet 132 via the side, and then flows to the gas outlet 131 protruding downward on the lower plate.

[0060] The heater section 2 includes a heater 21 that pyrolyzes at high temperature a precursor for High K deposition for an oxidation process or a precursor for oxide deposition contained in the exhaust gas flowing in through a gas inlet 121 formed in the upper plate of the housing to increase the chemical reactivity, and a diffuser 22 that is radially installed on the upper part of the heater to disperse the heated exhaust gas in a lateral direction.

[0061] The heater 21 and the diffuser 22 are fastened together by a plurality of heater mounting bases 129 formed on the lower part of the upper plate, and are installed and fixed in a suspended state on the lower part of the upper plate.

[0062] When power is applied to the heat source of the heater by a heater power supply unit 23 installed on the upper surface of the upper plate, the heat source heats the materials contained in the High K deposition precursor or the oxide deposition precursor contained in the inflowing exhaust gas up to the thermal decomposition temperature, thereby increasing the chemical reactivity.

[0063] For example, in one embodiment, when the precursor contained in the exhaust gas is TMA (trimethylaluminum), which is a precursor for aluminum oxide (Al2O3) deposition, the heater is heated to a thermal decomposition temperature of 100°C to 330°C and the precursor is supplied. In addition, in the case of TEMAHf (Tetrakis(ethylmethylamido)hafnium), which is a precursor for hafnium oxide (HfO2) deposition, the heater is heated to a thermal decomposition temperature of 300°C or higher and the precursor is supplied. In addition, in the case of Cp-Zr [Cyclopentadienyl Tris(dimethylamino)Zirconium], which is a precursor for zirconium oxide (ZrO2) deposition, the heater is heated to a thermal decomposition temperature of 200°C or higher and the precursor is supplied.

[0064] Meanwhile, the present invention can be applied to a process of collecting powdered oxide by pyrolyzing solid particles of the precursor contained in the exhaust gas and causing an oxidation reaction in the low temperature region of the box-type collector 4 by controlling the heating temperature of the heater to supply a pyrolysis temperature suitable for precursors used in processes for depositing other oxide materials in addition to the precursor using the High K material having a high dielectric constant.

[0065] In addition, the present invention is characterized in that the vertical height of the diffuser located above the heater unit is relatively higher than that of conventional diffusers, and the total number of radially arranged diffusers is relatively smaller than that of conventional diffusers.

[0066] In one embodiment, about five diffusers are arranged radially to increase the high-temperature contact with the inflowing exhaust gas due to the heat source thermally conducted by the heater, and the reduced number of diffusers reduces the space occupancy rate of the diffusers in the inflow space, preventing clogging due to reaction by-products, minimizing heat loss from the heater heated to a high temperature, while increasing the ease of cleaning the heater and minimizing damage to the heater.

[0067] As a result, the thermal decomposition of precursors contained in the exhaust gas is maximized and the precursors are supplied to the box-type collector in an increased chemical reactivity state, which increases the chemical reactivity of the precursors to be converted into oxides and increases the collection of solid powder oxides with high efficiency.

[0068] The first dispersion and collection unit 3 is configured to uniformly collect reaction by-products by dispersing and supplying exhaust gas containing high K substances thermally decomposed through the heater unit 2 to the box-shaped collection unit 4 located at the bottom.

[0069] The first dispersion / collection unit 3 is fastened by a plurality of collection unit mounting bases 129a formed on the lower part of the upper plate of the housing, and is installed and fixed in a suspended state on the lower part of the upper plate. The collection unit mounting base 129a is longer than the heater mounting base 129, and is configured so that the collection unit mounting base 129a is located further below the heater unit.

[0070] The first dispersion collection section 3 is composed of a square plate 31 like the internal space of the housing 1, and has a plurality of square holes 32 arranged in the plate area corresponding to the area where the two box-type collection sections 4 are installed at a certain distance from each other in the longitudinal direction from the bottom, so that the main flow of exhaust gas is supplied to the upper end of the box-type collection section 4.

[0071] For this reason, the square plate 31 is formed close to the inner wall of the housing 1, and the area at the peripheral portion where the square holes 32 are not formed is formed as a guide surface 33. Therefore, the main flow of exhaust gas that is dispersed to the sides by the diffuser 22 of the heater section 2 and flows along the wall surface of the housing flows toward the center along the guide surface 33, and then flows through the square holes 32 to the box-shaped collection section 4 at the bottom.

[0072] In addition, a portion of the exhaust gas flowing through the outside of the square plate 31 formed close to the inner wall of the housing generates a vortex due to the inner wall collection plate 111 formed in multiple stages protruding from the inner wall of the housing, and flows toward the box-type collection section 4 or downward to collect reaction by-products.

[0073] The box-type collection section 4 is composed of a collection box 41 that stores the exhaust gas that flows in into an internal space that forms a low-temperature region and then discharges it downwards, while loading the collected powdered oxide, and a collection plate section 42 in which multiple collection plates 421 are installed vertically in multiple tiers inside the collection box 41, and which captures solid high K substances as powdered oxides through an oxidation reaction in the low-temperature region.

[0074] In this case, the box-type collecting section 4 is composed of two or more box-type collecting sections 4 spaced apart at a certain interval in the width direction.

[0075] The reason for configuring two or more box-type collection parts 4 as described above is that the cooling pad parts 5 are provided with a rectangular shape with both sides formed larger than the height of the box-type collection parts 4, and are positioned between one side of the box-type collection part 4 on one side and the other side of the box-type collection part 4 on the other side, and between the box-type collection part 4 on one side and the box-type collection part 4 on the other side, thereby simultaneously providing a uniform low-temperature region around each box-type collection part 4, and simultaneously cooling the high K material to a temperature required for it to grow as a powdered oxide, and inducing an oxidation reaction in the low-temperature region to grow it, thereby allowing the solid reaction by-products pyrolyzed in the exhaust gas to be highly efficiently collected by the multiple box-type collection parts.

[0076] If the two box-type collection sections 4 are not separated but are configured as one box-type collection section 4 having the same volume, the side portion where the low temperature region is formed by the cooling pad section 5 undergoes an oxidation reaction and the high K material can grow as a powdered oxide. However, since the area forming the low temperature region is reduced, the oxidation reaction does not occur smoothly and a highly efficient collection reaction cannot be achieved, resulting in a problem of wasted collection space.

[0077] The collection box 41 has a structure in which a plurality of holes are formed on the upper and lower parts, and in one embodiment, it may be configured as a square box structure in which four inlet holes 41a are formed on the upper surface and four exhaust holes 41b are formed on the lower surface.

[0078] Therefore, the exhaust gas flow path is such that the exhaust gas flowing in from the upper part through the inlet hole is stored inside and then discharged only through the lower exhaust hole.

[0079] The collection box 41 has a rectangular structure on each side except for the inlet hole 41a and the exhaust hole 41b, and the material of each side is made of a metal material with high thermal conductivity, so that the low-temperature heat source provided from the cooling pad section 5 is rapidly thermally conducted to form a uniform low-temperature region.

[0080] As a result, the collection plate section 42 installed inside the collection box 41 simultaneously provides a uniform low-temperature region across the entire area, and as an oxidation reaction occurs, the high K substances contained in the inflowing exhaust gas grow into powdered oxides.

[0081] Meanwhile, guide plates 411 having a width approximately equal to the short side are formed at both ends of the upper surface of the rectangular parallelepiped-shaped collection box 41 so as to protrude upward to the underside of the first dispersion collection section 3, thereby guiding the flow of exhaust gas dispersed and supplied downward from the first dispersion collection section 3 to flow toward the upper inlet hole of the collection box 41 without escaping to the outside.

[0082] In addition, one side of one of the two collection boxes (41) has a plurality of vertical plates (412) arranged to protrude laterally and have a height slightly smaller than the vertical height of the collection box. This is configured to trap high K substances contained in the exhaust gas that cannot flow toward the upper inlet hole of the collection box (41) and flows downward along the side direction by growing them as powdered oxides through an oxidation reaction.

[0083] In addition, a plurality of vertical plates 412 having a height slightly smaller than the vertical height of the remaining collection box 41 are arranged to protrude laterally on the other side of the remaining collection box 41, and are configured to trap high K substances contained in the exhaust gas that cannot flow toward the upper inlet hole of the collection box 41 and flows downward along the side direction by growing them as powdered oxides through an oxidation reaction.

[0084] Meanwhile, in the two collection boxes 41 having a plurality of vertical plates 412 formed on one side as described above, the vertical plates of the second dispersion collection unit 6 are arranged on the remaining side where the vertical plates 412 are not formed, so that a plurality of them protrude to the side at a vertical height of about the same as that of the vertical plates 412 formed on one and the other side of the two collection boxes. This allows the high K materials contained in the exhaust gas that cannot flow toward the upper inlet hole of the collection box 41 and flows downward along the side direction to be grown as powder-like oxides through an oxidation reaction and collected.

[0085] As described above, when the flow of exhaust gas flowing through the top and side portions of the collection box 41 flows intermittently, the longitudinal space of the collection box is filled with a plurality of cooling pad portions 5 having a rectangular shape formed larger than the height of the box-type collection portion 4, which block the flow of exhaust gas between one side of the box-type collection portion 4 on one side, the other side of the box-type collection portion 4 on the other side, and between the spaced-apart box-type collection portions 4, and into the upper inlet hole 41a of each collection box 41.

[0086] The collecting plate section 42 is configured in multiple stages with a plurality of collecting plates 421 vertically supported on both sides of vertical support stands 422 installed vertically inside the box-type collecting section 4 at regular intervals.

[0087] The collection plates 421 constituting the collection plate section 42 are installed in multiple stages on the left and right vertical support bases 422 by welding or fitting.

[0088] In addition, the vertical support 422 is installed and fixed to the bottom surface of the box-type collection unit 4 by welding or fitting. The height of the vertical support 422 is sufficient as long as the collection plates 421 can be installed so as to be spaced apart from each other at a regular interval, and therefore may be formed to be slightly smaller than the height of the box-type collection unit 4.

[0089] In this manner, the collection plate section 42, which is configured in multiple stages using collection plates 421, captures solid high K substances contained in the exhaust gas as powdered oxides through an oxidation reaction after thermal decomposition of the exhaust gas when a low temperature region is formed inside the box-type collection section 4 by the heat source thermally conducted from the cooling pad section 5.

[0090] In one embodiment, six trapping plates 421 are provided, and the trapping plates 421 are arranged in alternating rows so that the trapping plates 421 positioned at the top have square holes 421a and the trapping plates 421 positioned at the bottom have circular holes 421b.

[0091] In addition, the square holes formed in the upper collection plate 421 are larger than those formed in the lower collection plate, and each collection plate 421 is formed so that the lower collection plate has smaller and more numerous square holes.

[0092] Similarly, the circular holes formed in the upper collection plate 421 are larger than those formed in the lower collection plate, and each stage is formed so that the lower collection plate has smaller and more circular holes.

[0093] In this way, if the holes formed in the upper and lower collection plates 421 are alternately shaped to be smaller and more numerous toward the bottom, the exhaust gases that flow in will not have the same flow because they are not of the same shape.

[0094] In other words, if the same size and shape are repeated, the exhaust gas will descend without creating a load that hinders the flow of exhaust gas, making it difficult for the capture reaction to occur. However, if the shapes and sizes are different, the gas will become smaller toward the bottom, and there will be more of them, and the descending gas will go through a process of colliding and being discharged through each collection plate 421. A different exhaust flow will be formed each time, and vortexes will occur due to the difference in flow speed, increasing the residence time at each collection plate 421. As a result, sufficient oxidation reaction will occur, and the high K substances contained in the exhaust gas that flows in will be captured as they grow into powdered oxides.

[0095] The trapped oxides are loaded onto the lower trapping plate 421 having smaller holes since the upper end of the trapping plate 42 has larger holes. As the trapping reaction increases, the internal space of the box-type trapping section 4 is filled.

[0096] In addition, the exhaust gas from which the solid reaction by-products have been removed is discharged downward through exhaust holes 41b formed in the lower part of the box-type collector 4, and then flows downward toward the second dispersion collector 6.

[0097] The cooling pad section 5 is configured to maximize the area of ​​the low temperature region in the box-type collection section 4, and is arranged between two box-type collection sections 4 spaced apart in the width direction, one side of one box-type collection section 4, and the other side of the other box-type collection section 4. The first cooling water storage pad 51, the second cooling water storage pad 52, and the third cooling water storage pad 53 are connected by a connecting pipe so that cooling water can be supplied sequentially to the box-type collection section 4 by thermal conduction.

[0098] Specifically, the cooling pad section 5 is configured so that cooling water flows in from one side inlet pipe 5a through the upper cooling bar 126 installed on the outer surface of the housing, circulates through the first cooling water storage pad 51, the second cooling water storage pad 52, and the third cooling water storage pad 53, providing a low temperature area to the box-type collection section 4, and then is discharged through the other side outlet pipe 5b of the cooling pad section 5 to the lower cooling bar 127 formed on the lower side of the housing, thereby maximizing the area of ​​the low temperature area.

[0099] The first cooling water storage pad 51, the second cooling water storage pad 52, and the third cooling water storage pad 53 are arranged so that one of them is located between the box-shaped collection units 4 and on the outer side, so that the first cooling water storage pad 51 and the second cooling water storage pad 52, and the second cooling water storage pad 52 and the third cooling water storage pad 53 are connected to each other by connecting pipes 5c and 5d that penetrate the sides to connect the separate spaces, thereby allowing the cooling water to circulate sequentially.

[0100] At this time, the connecting pipe 5c connecting the first cooling water storage pad 51 and the second cooling water storage pad 52 is configured to be connected and positioned at the lower part.

[0101] In addition, the connecting pipe 5d connecting the second cooling water storage pad 52 and the third cooling water storage pad 53 is configured to be connected and positioned at the upper part.

[0102] The reason for this configuration is that the inlet pipe 5a, which is connected to the first cooling water storage pad 51 and supplies cooling water, has a flow path that flows from the top to the top of the first cooling water storage pad 51 through the upper cooling bar 126 installed on one side of the housing and then flows to the bottom, and the cooling water that flows in from the bottom through the connecting pipe 5c flows into the bottom of the second cooling water storage pad 52 and then flows to the top, so the connecting pipe 5d is installed at the top, circulates from the top to the bottom of the third cooling water storage pad 53, and then is discharged to the lower cooling bar 127 formed on the lower side of the housing through the discharge pipe 5b connected to the bottom.

[0103] As described above, when the internal temperature of the housing is cooled to a temperature at which an oxidation reaction occurs through the supply of cooling water, cooling water storage pads such as the first cooling water storage pad 51, the second cooling water storage pad 52, and the third cooling water storage pad 53 are used instead of a simple cooling water supply pipe. The reason for this is that the cooling water heat source is simultaneously thermally conducted to the collection box 41 of the box-type collection unit 4, and a uniform low-temperature region is simultaneously provided to the multiple collection plates 421 installed inside the collection box 41, so that solid high K substances in the exhaust gas are collected as powdered oxides through an oxidation reaction.

[0104] However, if the first cooling water storage pad 51, the second cooling water storage pad 52, and the third cooling water storage pad 53 are configured with a structure that simply stores cooling water, some areas of the cooling water storage area may stagnate without circulating, resulting in a temperature difference with the circulating cooling water area. In this case, an uneven low-temperature area may be provided in the box-type collection unit 4, which may reduce the collection efficiency. Therefore, the present invention is configured to have a structure in which the entire area does not stagnate and the incoming cooling water is circulated sequentially.

[0105] For this purpose, the first cooling water storage pad 51, the second cooling water storage pad 52, and the third cooling water storage pad 53 are each provided with a horizontal obstruction plate 5e that divides the interior into upper and lower parts by a certain length, separating the internal space of each cooling water storage pad into an upper layer 5g and a lower layer 5h, and separating the flow path so that the inflowing cooling water flows sequentially to the other end.

[0106] In this case, the horizontal obstruction plate 5e is fixed at only one side end in contact with the first cooling water storage pad 51, the second cooling water storage pad 52, and the third cooling water storage pad 53, and the other side end is left open and unconnected, so that the flow paths between the upper layer and the lower layer are connected at that point.

[0107] In addition, in the upper layer 5g and the lower layer 5h divided by the horizontal baffle plate 5e, a plurality of vertical baffle plates 5f are arranged and installed at regular intervals so as to face the flow path of the cooling water.

[0108] In this case, the vertical obstruction plate 5f is installed so that one side end is in contact with the horizontal obstruction plate 5e and the other side end is open, or alternatively, it is installed alternately by shifting up and down so that one side end is in contact with the edge surface of the cooling water storage pad and the other side end is open.

[0109] As a result, in one embodiment, the cooling water flowing into the first cooling water storage pad 51 first flows into the upper layer 5g of the internal space divided by the horizontal baffle plate 5e, then flows in a zigzag path due to a plurality of vertical baffle plates 5f installed alternately in a staggered manner, then flows into the lower layer 5h at the bottom from the end of the horizontal baffle plate 5e, and then flows in a zigzag path again due to a plurality of vertical baffle plates 5f, then flows into the lower layer of the second cooling water storage pad 52 on the other side through the connecting pipe 5c, then flows in a zigzag path while flowing to the upper layer, then flows into the upper layer of the third cooling water storage pad 53 on the other side again through the connecting pipe 5d, then flows in a zigzag path while flowing to the lower layer, and then has a circulating flow in which it is discharged through the discharge pipe 5b.

[0110] Meanwhile, each of the horizontal and vertical baffle plates 5e and 5f is formed with a plurality of low-temperature vortex pieces 5i with a portion of the side portion protruding outward at regular intervals from the outside of the cooling water storage pad, thereby fixing the positions of the horizontal and vertical baffle plates 5e and 5f and generating vortexes in the flow of exhaust gas flowing along the outside of the cooling water storage pad to retard it, while thermally conducting the heat source of the cooling water and increasing the low-temperature area.

[0111] For this reason, the cooling water storage pad is formed with through grooves (not shown) at each protruding position of the low-temperature vortex pieces 5i so that the low-temperature vortex pieces 5i can be fitted in. Of course, when manufacturing the cooling water storage pad, welding and watertight treatment are performed on the protruding parts of the low-temperature vortex pieces to prevent leakage of cooling water.

[0112] The second dispersion and collection unit 6 is fastened to a spaced support 133 installed near each vertex of the upper surface of the lower plate 13, and is configured to collect reaction by-products while dispersing the exhaust gas that has passed through the box-type collection unit 4 toward the lower plate 13 located at a certain distance from the lower plate.

[0113] In addition, the second dispersion collection unit 6 is configured to support the load of the box-type collection unit 4 located above and the cooling pad unit 5 with a certain distance therebetween.

[0114] Specifically, the second dispersion collection section 6 is composed of a square plate 61 like the internal space of the housing 1, and has a number of square holes 62 arranged to disperse the exhaust gas. The square holes in the center have a smaller opening area, and the opening area increases toward the periphery so that the main flow of the descending exhaust gas takes place at the main surface.

[0115] In addition, the square plate 61 is formed close to the inner wall of the housing 1, and a guide surface 63 without a square hole 62 is formed on the peripheral portion, so that the exhaust gas that flows along the side of the upper box-type collection section 4 and along the wall surface of the housing flows toward the center along the guide surface 63, meets the square hole 62, and flows downward.

[0116] In addition, a plurality of vertical plates 64 are protruding upward from the top surface of the square plate 61 on both sides in a diagonal direction, and are welded to the sides where there are no vertical plates 412 formed on the sides of the two collection boxes 41, to support a load and grow and collect high K materials contained in the exhaust gas that cannot flow to the upper inlet hole of the collection box 41 and flows downward along the side direction as powdered oxides through an oxidation reaction. The vertical plates 64 are arranged to protrude in a lateral direction with a vertical height of about the same as that of the vertical plates 412 formed on one and the other sides of the collection box.

[0117] In addition, a plurality of support plates 65 are formed at multiple locations on one side of the upper surface of the square plate 61, and are configured to support a load while separating the lower parts of the first cooling water storage pad 51, the second cooling water storage pad 52, and the third cooling water storage pad 53 of the cooling pad section 5 at a certain distance from each other.

[0118] In addition, guide plates 66 are vertically protruding downward from the bottom surface of the square plate 61 between the multiple arranged square holes 62. The multiple arranged guide plates 66 guide the exhaust gas flowing downward through the adjacent square holes 62 so that it does not disperse to the periphery but stably descends toward the lower plate along the dispersed square holes, thereby collecting reaction by-products. At this time, the guide plate 66 is not installed on the side where the mesh filter outlet 132 is installed because there is no space for it to protrude.

[0119] Meanwhile, a portion of the exhaust gas flowing through the outside of the square plate 61 formed close to the inner wall of the housing generates a vortex due to the inner wall collection plate 111 formed in multiple stages protruding from the inner wall of the housing, and flows toward the second dispersion collection section 6 or downward to collect reaction by-products.

[0120] Among the exhaust gases dispersed downward by the second dispersion and collection unit 6 having the above-mentioned structure, the exhaust gases that have descended to the center do not descend because they are blocked by the mesh filter outlet 132 that blocks the upper part so that they do not directly outflow to the gas outlet 131 formed in the center of the lower plate, but are dispersed and spread out on the inner wall of the housing in the lateral direction, and are finally filtered while collecting reaction by-products that have not been collected through the mesh filter formed on the periphery of the side of the mesh filter outlet 132, and are discharged to the gas outlet 131. If the exhaust gas were to directly outflow through the gas outlet 131 without the mesh filter outlet 132, it may be included in the exhaust gas and flow to the vacuum pump, causing a malfunction.

[0121] Next, the operation of the present invention configured as described above will be described.

[0122] In order to miniaturize semiconductor circuits, a High K deposition precursor for an oxidation process, which is a High K material with a high dielectric constant and is supplied to a process chamber in which semiconductors are being manufactured for a semiconductor dielectric film process, is contained in the exhaust gas after the deposition process and flows into the gas inlet 121 of the housing 1 of the collection device. The heater 21 of the heater unit 2 thermally decomposes the High K deposition precursor for the oxidation process contained in the exhaust gas at a high temperature that is preset according to the characteristics of the High K material contained in the precursor, thereby increasing its chemical reactivity.

[0123] Then, a diffuser 22 radially installed above the heater disperses the heated exhaust gas laterally while increasing the high temperature contact.

[0124] Next, the exhaust gas flow in which the solid high-K material contained in the precursor is thermally decomposed is distributed and uniformly supplied by the first dispersion and collection unit 3 to the upper part of the two box-type collection units 4 located at the bottom.

[0125] At this time, cooling water supplied from the outside is stored in the outer periphery of the two box-type collectors 4 and in the space between them by the first cooling water storage pad 51, the second cooling water storage pad 52, and the third cooling water storage pad 53 that constitute the square cooling pad unit 5, and as it flows sequentially, the cooling water heat source is simultaneously conducted to the collection box 41 of the box-type collector 4, which has a low-temperature region that matches the temperature required for the High K material to grow as a powdered oxide, thereby simultaneously providing a uniform low-temperature region to the multiple collection plates 421 installed inside the collection box 41.

[0126] When the exhaust gas flows into the collection box 41 of the box-type collection section in a state of thermal conduction, the exhaust gas flows through the collection plate section 42, which is composed of multiple collection plates 421 installed inside the collection box, and along a flow path in which the holes formed in the collection plates of each stage have different sizes and shapes, and the solid high K substances contained in the exhaust gas are captured as powdered oxides through an oxidation reaction, and are stored inside.

[0127] After that, the exhaust gas after the solid high K substances have been collected as powdered oxides through an oxidation reaction is not directly discharged through the lower exhaust port, but the second dispersion and collection section 6 disperses the exhaust gas that has passed through the box-type collection section 4 toward the lower plate 13 located at the bottom, thereby collecting the reaction by-products.

[0128] The dispersed exhaust gases are then discharged through a mesh filter outlet that protrudes from the top of the lower outlet of the housing into the interior of the housing, and finally discharged to the gas outlet 131 by a lateral inflow flow while minimizing the outflow of reaction by-products.

[0129] The present invention is not limited to the specific preferred embodiments described above, and various modifications can be made by anyone having ordinary knowledge in the technical field to which the invention pertains without departing from the gist of the present invention as claimed in the claims, and such modifications are within the scope of the claims. [Explanation of symbols]

[0130] 1. Housing 2 Heater section 3 1st distributed collection section 4 Box-type collection section 5 Cooling pad section 5a Inlet pipe 5b Exhaust pipe 5c, 5d Connecting pipe 5e horizontal jamming board 5f Vertical obstruction board 5g Upper layer 5h lower layer 5i Low temperature eddy current piece 6 2nd distributed collection section 11 Inner wall 12 Upper Plate 13 Lower plate 21 Heater 22 Diffuser 23 Heater power supply 31 Square Plate 32 Square Hall 33 Guide surface 41 Collection box 41a Inflow hole 41b Exhaust hole 42 Collection plate section 51 First cooling water storage pad 52 Second Cooling Water Storage Pad 53 3rd Cooling Water Storage Pad 61 Square Plate 62 Square Hall 63 Guide Surface 64 Vertical Plate 65 Support Plate 66 Guide plate 111 Inner wall collection plate Hall 111a 121 Gas inlet 122 Cooling water flow path 123 Channel cover 124 Cooling water inlet 125 Cooling water outlet 126 Upper cooling bar 127 Lower Cooling Bar 128 Cooling water pipe 129 Heater Stand 129a Collection unit stand 131 Gas exhaust port 132 Mesh filter outlet 132a Mesh filter 133 Separate support stand 411 Guide plate 412 Vertical Plate 421 Collection Plate 421a Square Hall 421b Circular Hall 422 Vertical support platform

Claims

1. A collection device that collects reaction by-products by storing exhaust gas discharged from a process chamber inside a housing while heating the exhaust gas with a heater unit, a first dispersion and collection unit for dispersing exhaust gas, which flows into the gas inlet of the housing and contains the high-K material thermally decomposed in the heater unit, into the lower box-shaped collection unit and collecting reaction by-products; a collection box for storing the exhaust gas flowing into an internal space formed with a low temperature region and discharging the exhaust gas downward to load the powdered oxides collected therein; and a box-type collection unit including a collection plate unit arranged in multiple stages with a plurality of collection plates spaced apart from each other vertically, which is installed inside the collection box and grows and collects the solid high-K material as powdered oxides by oxidation reaction in the low temperature region; A cooling pad unit configured to circulate and then discharge cooling water supplied from an outside source so as to maximize the area of ​​the low-temperature region in the box-type collection unit; a second dispersion and collection section that collects reaction by-products while dispersing the exhaust gas that has passed through the box-type collection section downward; A reaction by-product collection device for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region, comprising:

2. The box-type collecting section is configured to be arranged at least two at a certain interval in the width direction, The cooling pad unit is configured such that a first cooling water storage pad, a second cooling water storage pad, and a third cooling water storage pad are connected to sequentially store and supply cooling water, and a cooling water storage pad is disposed between two box-shaped collecting units and on an outer surface of the collecting unit.

2. The apparatus for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 1.

3. The collection box is made of a metal material and has a rectangular box structure with a plurality of inlet holes on the upper surface and a plurality of exhaust holes on the lower surface, and is configured to form a uniform low-temperature area by a heat source provided by a cooling pad part, Guide plates are formed on both sides of the upper surface up to the lower surface of the first dispersion and collection unit, and are configured to guide the flow of exhaust gas toward the inlet hole and collect reaction by-products, A plurality of vertical plates protrude from one side of the exhaust gas separator in a lateral direction to collect reaction by-products from exhaust gas flowing along the lateral direction.

2. The apparatus for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 1.

4. The collection plate part is configured in multiple stages with a plurality of collection plates spaced apart at regular intervals from each other on vertical supporters on both sides, and each collection plate is configured in multiple stages with a plurality of square or circular holes formed therein, and the square or circular holes are formed so as to be smaller and more numerous toward the lower collection plate.

2. The apparatus for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 1.

5. The cooling pad section is configured such that the first cooling water storage pad, the second cooling water storage pad, and the third cooling water storage pad are connected by a connecting pipe to sequentially store and supply the cooling water, the internal space is divided into an upper layer and a lower layer by a horizontal baffle plate at a certain length to form a flow path through which the cooling water flows sequentially, and the upper layer and the lower layer are each alternately installed with a plurality of vertical baffle plates at a certain interval so as to be shifted up and down, forming a zigzag flow path for the cooling water.

3. A device for collecting reaction by-products in a semiconductor process using thermal decomposition in a high temperature region and induction of an oxidation reaction in a low temperature region according to claim 1 or 2.

6. The horizontal and vertical baffle plates are characterized in that they form a plurality of low-temperature vortex pieces by protruding a part of the side part to the outside of the cooling water storage pad at regular intervals to increase the vortex generation and low-temperature area.

6. The apparatus for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 5.

7. The housing is configured such that a plurality of inner wall collection plates are formed in multiple stages in the upper and lower directions along the inner wall of a square box shape, and the inner wall collection plates formed in multiple stages in the lower region protrude longer than the inner wall collection plates in the upper region and have a plurality of holes to form and collect vortexes, The housing is configured such that a mesh filter outlet is installed on the upper side of the gas outlet formed at one place on the lower plate, and the exhaust gas flows through the mesh filter formed on the periphery and is then discharged from the gas outlet.

2. The apparatus for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 1.

8. The cooling water discharged after being supplied to the cooling pad unit and circulating flows in through a cooling water inlet port installed on the upper plate of the housing, flows into a first cooling water storage pad of the cooling pad unit connected to an upper cooling bar installed on the upper part of the outer side of the housing, and is stored and circulated through a second cooling water storage pad and a third cooling water storage pad in sequence to provide a low-temperature region in the box-shaped collector. The cooling water is discharged to a lower cooling bar formed on the lower part of the outer side of the housing connected to the third cooling water storage pad, flows upward, and is supplied to a cooling water flow path formed on the upper plate and circulates to cool the upper plate of the housing, and is then discharged through a cooling water outlet port.

2. The apparatus for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 1.

9. The heater unit includes a heater for thermally decomposing a precursor for High K deposition for an oxidation process or a precursor for oxide deposition contained in the exhaust gas at a high temperature to increase chemical reactivity, and a diffuser installed radially above the heater for dispersing the heated exhaust gas in a lateral direction while increasing high-temperature contact, The heater is configured to heat the precursor contained in the inflowing exhaust gas to 100°C to 330°C when the precursor is an aluminum oxide deposition precursor, to heat the precursor to 300°C or more when the precursor is a hafnium oxide deposition precursor, and to heat the precursor to 200°C or more when the precursor is a zirconium oxide deposition precursor, thereby pyrolyzing the precursor.

2. The apparatus for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 1.

10. The first dispersion collecting part is composed of a square plate suspended from the upper plate of the housing, and a plurality of square holes are arranged in an area corresponding to the box-shaped collecting part area located at the bottom, and the remaining area is formed as a guide surface that guides the exhaust gas flow along the wall of the housing toward the square holes by dispersing the exhaust gas to the side.

2. The apparatus for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 1.

11. The second dispersion and collection unit is composed of a square plate including an area in which a plurality of square holes for guiding exhaust gas downward are arranged, and a guide surface area for guiding exhaust gas from the periphery toward the square holes, and the square holes are formed such that the opening area is small at the center and becomes larger toward the periphery, The square plate is configured to support the load of the box-type collecting part and the cooling pad part at a certain distance by a spaced support installed on the lower plate, 2. The apparatus for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 1.

12. A plurality of vertical plates are provided on both sides of the upper surface of the rectangular plate in a diagonal direction and protrude upward. The vertical plates are welded to the sides of the two collection boxes to collect reaction by-products contained in the exhaust gas flowing along the side direction. A plurality of support plates are formed at a plurality of locations on one side of the upper surface, and the lower portions of the first cooling water storage pad, the second cooling water storage pad, and the third cooling water storage pad of the cooling pad part are each spaced apart from each other at a certain distance to support a load. The device for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 11.

13. The rectangular plate has guide plates vertically protruding downward between the rectangular holes arranged on the lower surface of the rectangular plate, and is configured to uniformly guide the flow of the exhaust gas flowing downward and collect the reaction by-products. The device for collecting reaction by-products for semiconductor processing using thermal decomposition in a high temperature region and oxidation reaction induction in a low temperature region according to claim 11.

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