Composite component

Abstract

To improve the transmission characteristics in the GHz band in a bias T circuit.SOLUTION: A wire-wound inductor for forming a bias T circuit is integrated with a bypass capacitor made of a chip capacitor. By integrating the wire-wound inductor and the bypass capacitor, the wire-wound inductor and the bypass capacitor can be placed adjacent to each other, and the distance between the wire-wound inductor and the bypass capacitor is shortened. Any number of chip capacitors with any capacitance value are stored in a storage portion. By appropriately selecting the chip capacitor, it is expected that the transmission characteristics in the GHz band is to be improved.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to composite parts. [Background technology]

[0002] There is a known PoC (Power over Coax) circuit that superimposes power on a signal cable. A bias T circuit is sometimes used to realize the PoC circuit. The bias T circuit includes a capacitor and an inductor connected in series to the signal line.

[0003] US Pat. No. 5,399,633 discloses an integrated electronic component having an inductor and a bypass capacitor of a bias-T circuit. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Special Publication No. 2019-537268 Summary of the Invention [Problem to be solved by the invention]

[0005] PoC circuits are required to have higher transmission speeds and larger data volumes, and therefore better characteristics are required in broadband and high-frequency bands. To achieve good characteristics in broadband, it is necessary to connect a bypass capacitor to the inductor of the bias-T circuit. In a PoC circuit, if the inductor and bypass capacitor of the bias-T circuit are mounted far apart due to the design of the board, resonance may occur in the transmission characteristics in the GHz band, and the standard may not be met.

[0006] The present invention has been made in view of the above, and an object of the present invention is to provide a composite part that achieves better characteristics in a wide band and a high frequency band. [Means for solving the problem]

[0007] In order to solve the above-mentioned problems and achieve the object, a composite part according to an embodiment of the present disclosure includes a columnar winding core portion, and when a direction in which the winding core portion extends is defined as a first direction, a first flange portion and a second flange portion are respectively connected to both ends of the winding core portion in the first direction and protrude from the winding core portion in a second direction perpendicular to the first direction, the first flange portion has a first bottom surface, a first side surface erected from the first bottom surface, and a first top surface connected to the first side surface, the second flange portion has a second bottom surface, a second side surface erected from the second bottom surface, and a second top surface connected to the second side surface, and further includes a first electrode formed on the first bottom surface of the first flange portion, and a second flange portion formed on the second bottom surface of the first flange portion. the first storage section is provided with a third electrode and a fourth electrode at both ends thereof, one end of the winding is connected to the first electrode, the other end of the winding is connected to the second electrode, the third electrode is connected to the other end of the winding, the first electrode is an electrode connected to a signal line of a bias T circuit, the second electrode is an electrode connected to a power supply line of a bias T circuit, and the fourth electrode is an electrode connected to a reference potential.

[0008] A composite part according to an aspect of the present disclosure includes a columnar winding core portion, and a first flange portion and a second flange portion connected to both ends of the winding core portion in the first direction when a direction in which the winding core portion extends is defined as a first direction, and protruding from the winding core portion in a second direction perpendicular to the first direction, the first flange portion having a first bottom surface, a first side surface erected from the first bottom surface, and a first top surface connected to the first side surface, the second flange portion having a second bottom surface, a second side surface erected from the second bottom surface, and a second top surface connected to the second side surface, and further including a first electrode formed on the first bottom surface of the first flange portion and a second electrode formed on the second bottom surface of the second flange portion. a second electrode formed on the winding core portion, a winding wound around the winding core portion, a first storage portion capable of storing an electronic component connected to the first side surface of the first flange portion from the first side surface of the first flange portion toward a second direction, and a capacitor stored in the first storage portion, the first storage portion having a third electrode and a fourth electrode at both ends thereof, one end of the winding is connected to the first electrode and the other end is connected to the second electrode, the third electrode is connected to the first electrode, the first electrode is an electrode connected to a power supply line of a bias T circuit, the second electrode is an electrode connected to a signal line of a bias T circuit, and the fourth electrode is an electrode connected to a reference potential.

[0009] A composite part according to an aspect of the present disclosure includes a columnar winding core portion, and a first flange portion and a second flange portion connected to both ends of the winding core portion in the first direction when a direction in which the winding core portion extends is defined as a first direction, and protruding from the winding core portion in a second direction perpendicular to the first direction, the first flange portion having a first bottom surface, a first side surface standing from the first bottom surface, and a first top surface connected to the first side surface, the second flange portion having a second bottom surface, a second side surface standing from the second bottom surface, and a second top surface connected to the second side surface, and further including a first electrode formed on the first bottom surface of the first flange portion, a second electrode formed on the second bottom surface of the second flange portion, a winding wound around the winding core portion, and an electronic component provided between the first flange portion and the second flange portion. the first storage section includes a first storage section capable of storing an electronic component, a second storage section covering the first top surface of the first flange section and the second top surface of the second flange section and capable of storing an electronic component, a capacitor stored in the first storage section, an inductor stored in the second storage section, and a third electrode and a fourth electrode formed at both ends of the second storage section, the first storage section has a fifth electrode and a sixth electrode at both ends, one end of the winding is connected to the first electrode, the other end of the winding is connected to the third electrode, the sixth electrode is connected to the fourth electrode, the first electrode is an electrode connected to a signal line of a bias T circuit, the second electrode is an electrode connected to a reference potential, the fourth electrode is an electrode connected to a power supply line of the bias T circuit, and the fifth electrode is an electrode connected to the reference potential. Effect of the Invention

[0010] The composite component of the present disclosure can achieve better characteristics in a wide band and at high frequencies. [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a diagram showing the appearance of a composite part according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a side view of the composite part shown in FIG. [Diagram 3]FIG. 3 is a diagram showing a configuration of a core in FIG. [Figure 4] FIG. 4 is a diagram showing a state in which a conducting wire is wound around the core of FIG. [Diagram 5] FIG. 5 is a diagram showing a state in which resin is provided on the surface of the winding wound around the core. [Figure 6] FIG. 6 is a diagram for explaining the storage section in FIG. [Figure 7] FIG. 7 is a diagram illustrating the procedure for assembling the composite part according to the first embodiment. [Figure 8] FIG. 8 is a diagram showing an equivalent circuit when a bias T circuit is configured using the composite component shown in FIG. [Figure 9] FIG. 9 is a diagram showing the appearance of a composite part according to the second embodiment of the present disclosure. [Figure 10] FIG. 10 is a side view of the composite part shown in FIG. [Figure 11] FIG. 11 is a diagram for explaining the storage section in FIG. [Figure 12] FIG. 12 is a diagram illustrating a procedure for assembling the composite part according to the second embodiment. [Figure 13] FIG. 13 is a diagram showing an equivalent circuit when a bias T circuit is configured using the composite part shown in FIG. [Figure 14] FIG. 14 is a diagram showing an external appearance of a composite part according to the third embodiment of the present disclosure. [Figure 15] FIG. 15 is a side view of the composite part shown in FIG. [Figure 16] FIG. 16 is a diagram for explaining the storage section in FIG. [Figure 17] FIG. 17 is a diagram illustrating a procedure for assembling the composite part according to the third embodiment. [Figure 18] FIG. 18 is a diagram showing an equivalent circuit when a bias T circuit is configured using the composite part shown in FIG. [Figure 19] FIG. 19 is a diagram showing an external appearance of a composite part according to the fourth embodiment of the present disclosure. [Figure 20] FIG. 20 is a diagram showing a state in which the storage section and the short chip are connected. [Figure 21] FIG. 21 is a diagram showing a state in which the storage section and the short chip are connected and further a chip capacitor is stored. [Figure 22] FIG. 22 is a diagram showing an external appearance of a composite part according to the fifth embodiment of the present disclosure. [Figure 23] FIG. 23 is a diagram showing the appearance of a composite part according to the sixth embodiment of the present disclosure. [Figure 24] FIG. 24 is a diagram illustrating the effects obtained by the composite part of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, the embodiments of the present invention will be described in detail with reference to the drawings. In the following description of each embodiment, the same or equivalent components as those in other embodiments are given the same reference numerals, and their description will be simplified or omitted. The present invention is not limited to each embodiment. In addition, the components of each embodiment include those that are replaceable and easy for a person skilled in the art, or those that are substantially the same. The configurations described below can be appropriately combined. In addition, the configurations can be omitted, replaced, or modified within the scope of the gist of the invention.

[0013] (First embodiment) (composition) Fig. 1 is a diagram showing the appearance of a composite part according to a first embodiment of the present disclosure. Referring to Fig. 1, the composite part 100 includes a core 10, a winding 14, a resin 15, a short chip 16, and a storage portion ST1. The composite part 100 is structured such that the storage portion ST1 is connected to an upper portion of the core 10, and one end of the short chip 16 is connected to the storage portion ST1. The short chip 16 is provided between a first flange portion 13 and a second flange portion 12.

[0014] In this example, the storage section ST1 stores four chip capacitors C1, C2, C3, and C4. The chip capacitors C1, C2, C3, and C4 realize the capacitance C of the bypass capacitor. The chip capacitors C1, C2, C3, and C4 may all have the same capacitance value or may have different capacitance values.

[0015] The sizes of the chip capacitors C1, C2, C3, and C4 are, for example, 2012 size (long side 2.0 mm, short side 1.25 mm), 1608 size (long side 1.6 mm, short side 0.8 mm), and 1005 size (long side 1.0 mm, short side 0.5 mm).

[0016] Fig. 2 is a side view of the composite part 100 shown in Fig. 1. Fig. 2 is a view of the composite part 100 as viewed from the direction of the arrow Y11 in Fig. 1. As shown in Fig. 2, the composite part 100 appears to be rectangular.

[0017] Fig. 3 is a diagram showing the configuration of the core in Fig. 1. Fig. 4 is a diagram showing a state in which a conductive wire is wound around the core in Fig. 3. Fig. 5 is a diagram showing a state in which resin is provided on the surface of the winding 14 wound around the winding core portion 11.

[0018] 3, the core 10 has a winding core portion 11, a first flange portion 13, and a second flange portion 12. The core 10 is made of, for example, ferrite.

[0019] The winding core 11 is a winding core for winding a conductive wire. The winding core 11 is columnar and extends in the direction of the arrow Y1, which is the left-right direction in the figure. The winding core 11 is square columnar as shown in Figure 3. The winding core 11 may be cylindrical.

[0020] A first flange portion 13 and a second flange portion 12 are connected to both ends of the winding core portion 11 in the direction of arrow Y11 (first direction). That is, the first flange portion 13 is connected to one end 11a of the winding core portion 11, and the second flange portion 12 is connected to the other end of the winding core portion 11. In FIG. 3, if the direction of arrow Y1 is the X-axis direction, the first flange portion 13 extends in the Y-axis direction and the Z-axis direction perpendicular to the X-axis direction. The second flange portion 12 extends in the Y-axis direction and the Z-axis direction perpendicular to the X-axis direction.

[0021] The first flange portion 13 has a bottom surface 13B (corresponding to the first bottom surface in the claims), a side surface 13S (corresponding to the first side surface in the claims) standing from the bottom surface 13B, and a top surface 13U (corresponding to the first top surface in the claims) connected to the side surface 13S. An electrode 21 (corresponding to the first electrode in the claims) is provided on the bottom surface 13B. The electrode 21 is provided on the entire surface of the bottom surface 13B. The second flange portion 12 has a bottom surface 12B (corresponding to the second bottom surface in the claims), a side surface 12S (corresponding to the second side surface in the claims) standing from the bottom surface 12B, and a top surface 12U (corresponding to the second top surface in the claims) connected to the side surface 12S. An electrode 22 (corresponding to the second electrode in the claims) is provided on the bottom surface 12B. The electrode 22 is provided on the entire surface of the bottom surface 12B. Moreover, the electrode 22 extends in the Z-axis direction from the bottom surface 12B along the side surface 12S to the top surface 12U.

[0022] A top surface 13U of the first flange portion 13 and a top surface 12U of the second flange portion 12 are flat. A storage section is connected to the top surfaces 12U and 13U, as described later.

[0023] 4, a conductive wire is wound around the winding core portion 11. That is, a winding 14 is wound around the winding core portion 11. One end 14a of the winding 14 is electrically connected to the electrode 21. The other end 14b of the winding 14 is electrically connected to the electrode 22 on the top surface 12U of the second flange portion 12.

[0024] 5, resin 15 is provided so as to cover the surface of winding 14. Resin 15 is provided to insulate winding 14 from other parts.

[0025] Returning to FIG. 1, length D1 is the length of core 10 in the X-axis direction. Length D1 is, for example, 3.2 mm. Also, in FIG. 2, length D2 is the length of composite part 100 in the Z-axis direction. Length D2 is, for example, 2.3 mm. Length D3 is the length of composite part 100 in the Y-axis direction. Length D3 is, for example, 2.5 mm. Length D4 is the distance between electrodes of storage section ST1. Length D4 is, for example, 0.3 mm.

[0026] In FIG. 1, the storage section ST1 has an electrode 23 (corresponding to a third electrode in the claims) and an electrode 24 (corresponding to a fourth electrode in the claims). Here, referring to FIG. 6, the storage section ST1 will be described. FIG. 6 is a diagram for explaining the storage section ST1 in FIG. 1. As shown in FIG. 6, there is a space between the electrode 23 and the electrode 24. A chip capacitor is stored in this space. For example, the chip capacitor C1 can be stored in the space of the storage section ST1 by moving in the direction indicated by the arrow Y14. If solder paste is applied to the inner surface of the electrode 23 and the inner surface of the electrode 24, the stored chip capacitor C1 can be temporarily fixed. The temporarily fixed chip capacitor C1 can be fixed to the storage section ST1 by melting the solder paste by a reflow process. Only one chip capacitor C1 is drawn in FIG. 6. In this example, a maximum of four chip capacitors can be stored in the storage section ST1. When four chip capacitors C1, C2, C3, and C4 are stored in the storage portion ST1, the chip capacitors C1, C2, C3, and C4 are connected in parallel between the electrode 23 and the electrode 24.

[0027] FIG. 7 is a diagram illustrating the procedure for assembling the composite part 100 according to the first embodiment. First, the core 10 described with reference to FIGS. 3 to 5 is prepared. As shown by the arrow Y12, the storage section ST1 is connected to the upper part of the core 10. Next, as shown by the arrow Y13, the short chip 16 is provided on the lower part of the storage section ST1. The short chip 16 is provided between the first flange portion 13 and the second flange portion 12. At this time, one end of the short chip 16 is connected to the bottom surface of the storage section ST1.

[0028] 7, a storage section ST1 is prepared in this example, in which four chip capacitors C1, C2, C3, and C4 are stored and fixed. Then, this is connected to the upper part of the core 10. At this time, the electrode 23 of the storage section ST1 and the other end 14b of the winding 14 are connected to the top surface 12U of the second flange portion 12. In another example, a storage section ST1 in which fewer than four chip capacitors are stored and fixed may be prepared and connected to the upper part of the core 10.

[0029] In yet another example, a storage section ST1 not housing a chip capacitor may be prepared and connected to the top of core 10, as shown in FIG. 6. At this time, it is preferable to apply solder paste to the inner surfaces of electrodes 23 and 24 of storage section ST1. In this way, it is possible to select the chip capacitors and the number of chip capacitors (up to four) required to obtain the required characteristics and store them in storage section ST1. After storage in storage section ST1, as described above, the solder paste can be melted by reflow processing to fix the chip capacitors to storage section ST1.

[0030] 1, the composite component 100 may be provided as a product with a preselected chip capacitor housed in the storage section ST1, or the composite component may be provided as a product with no chip capacitor housed in the storage section ST1. In the latter case, the chip capacitor to be housed in the storage section ST1 is selected by the supplier, and the frequency characteristics can be fine-tuned.

[0031] (effect) FIG. 8 is a diagram showing an equivalent circuit when a bias T circuit is configured using the composite component 100 shown in FIG. 1. In FIG. 8, the signal line of the bias T circuit is between port P1 and port P2. A power supply is superimposed on the signal cable between port P1 and port P2. A capacitor C0 is connected in series between port P1 and port P2. The capacitance of the capacitor C0 is, for example, 0.1 μF. In FIG. 8, the chip capacitors and the capacitors on the circuit are denoted by the same reference symbols C1, C2, C3, and C4.

[0032] As indicated by the dashed dotted line, a composite component 100 is connected to a node NS between one end of the capacitor C0 and the port P2. By connecting the composite component 100, the transmission characteristics in the GHz band can be improved.

[0033] Node NS corresponds to electrode 21 in FIG 1. One end of coil L1 is connected to node NS. Coil L1 corresponds to winding 14 in FIG 1. The other end of coil L1 is connected to node NC. Node NC corresponds to electrode 23 in FIG 1.

[0034] One end of each of the capacitors C1, C2, C3, and C4 is connected to the node NC. The other end (corresponding to the electrode 24) of each of the capacitors C1, C2, C3, and C4 is connected to the reference potential. Therefore, in this example, the four capacitors C1, C2, C3, and C4 are connected in parallel between the node NC and the reference potential. The four capacitors C1, C2, C3, and C4 act as bypass capacitors. The reference potential is, for example, a ground potential. The same applies to the following explanations.

[0035] The node NC is connected to a port DCP. The port DCP is connected to a power supply line of the bias T circuit. A predetermined DC voltage is output from the port DCP. The port DCP corresponds to the electrode 22 in FIG.

[0036] According to the above configuration, the coil L1 and the bypass capacitor can be integrated. Therefore, the coil L1 and the bypass capacitor can be brought closer to each other, and the distance between them can be reduced. This is expected to improve the transmission characteristics in the GHz band. Furthermore, by making them into an integrated part, space saving can be achieved.

[0037] Second embodiment (composition) Fig. 9 is a diagram showing the appearance of a composite component according to a second embodiment of the present disclosure. Referring to Fig. 9, the composite component 100a according to the second embodiment differs from the composite component 100 of the first embodiment in the arrangement of chip capacitors. In addition, the composite component 100a does not have a short chip.

[0038] As shown in Fig. 9, in a composite part 100a according to the second embodiment, a core 10a is used instead of the core 10 of the first embodiment. The positions of the electrodes 21 and 22 of the core 10a are different from those of the core 10. One end 14a of the winding 14 is connected to an electrode 22 (corresponding to a first electrode in the claims) of the core 10a. The other end 14b of the winding 14 is connected to an electrode 21 (corresponding to a second electrode in the claims) of the core 10a. The core 10a is made of, for example, ferrite, like the core 10.

[0039] The storage section ST2 is provided on the side of the core 10a. Specifically, the side 13S of the first flange section 13 of the core 10a is connected to the storage section ST2 in the Y-axis direction from the side 13S of the first flange section 13. Then, the electrode 23 (corresponding to the third electrode in the claims) of the storage section ST2 is connected to the electrode 22 of the core 10a. In the composite component 100a, the structure of the storage section ST2 is different from that of the composite component 100 of the first embodiment. In this example, the storage section ST2 stores three chip capacitors C1, C2, and C3. The chip capacitors C1, C2, and C3 realize the capacitance C of the bypass capacitor. The chip capacitors C1, C2, and C3 may all have the same capacitance value or may have different capacitance values.

[0040] The sizes of the chip capacitors C1, C2, and C3 are, for example, 2012 size (long side 2.0 mm, short side 1.25 mm), 1608 size (long side 1.6 mm, short side 0.8 mm), and 1005 size (long side 1.0 mm, short side 0.5 mm).

[0041] The composite part 100a has a configuration in which a lid portion 50 is connected onto the core 10a. The strength of the core 10a can be maintained by connecting the lid portion 50 to the top surface 13U of the first flange portion 13 and the top surface 12U of the second flange portion 12. If the strength of the core 10a can be maintained, the lid portion 50 may be omitted. The lid portion 50 is made of, for example, ferrite, like the core 10a.

[0042] Fig. 10 is a side view of the composite part 100a shown in Fig. 9. Fig. 10 is a view of the composite part 100a viewed from the direction of arrow Y15 in Fig. 9. As shown in Fig. 10, the composite part 100a has a storage section ST2 connected to a rectangular first flange portion 13.

[0043] Returning to FIG. 9, length D1 is the length of core 10 in the X-axis direction. Length D1 is, for example, 3.2 mm. Length D4 is the distance between electrodes of storage section ST2. Length D4 is, for example, 0.3 mm. Length D5 is the length of storage section ST2 in the Y-axis direction. Length D5 is, for example, 2.2 mm. Also in FIG. 10, length D2 is the length of composite component 100a in the Z-axis direction. Length D2 is, for example, 2.3 mm. Length D3 is the length of composite component 100a in the Y-axis direction. Length D3 is the length of composite component 100a in the Y-axis direction excluding storage section ST2. Length D3 is, for example, 2.5 mm.

[0044] FIG. 11 is a diagram for explaining the storage section ST2 in FIG. 9. As shown in FIG. 11, the storage section ST2 has an electrode 23 and an electrode 24 (corresponding to the fourth electrode in the claims). There is a space between the electrode 23 and the electrode 24. A chip capacitor is stored in this space. For example, by moving in the direction indicated by the arrow Y16, the chip capacitor C1 and the like can be stacked and stored in the space of the storage section ST2. If solder paste is applied to the inner surface of the electrode 23 and the inner surface of the electrode 24, the stored chip capacitor can be temporarily fixed. The temporarily fixed chip capacitor can be fixed to the storage section ST2 by melting the solder paste by a reflow process. In this example, a maximum of three chip capacitors can be stored in the storage section ST2. When three chip capacitors C1, C2, and C3 are stored in the storage section ST1, the chip capacitors C1, C2, and C3 are connected in parallel between the electrode 23 and the electrode 24.

[0045] Fig. 12 is a diagram illustrating the assembly procedure of the composite part 100a according to the second embodiment. First, the core 10a described with reference to Fig. 9 is prepared. As shown by the arrow Y17, the lid portion 50 is connected to the upper portion of the core 10a. Next, as shown by the arrow Y18, the electrode 22 of the first flange portion 13 is connected to the electrode 23 of the storage portion ST2.

[0046] 12, in this example, a storage section ST2 is prepared in which three chip capacitors C1, C2, and C3 are stored and fixed, and an electrode 23 of the storage section ST2 is connected to an electrode 22 of the first flange portion 13. In another example, a storage section ST2 in which fewer than three chip capacitors are stored and fixed may be prepared, and an electrode 23 of the storage section ST2 may be connected to an electrode 22 of the first flange portion 13.

[0047] In yet another example, a storage section ST2 not housing a chip capacitor may be prepared as shown in FIG. 11, and the electrode 23 of the storage section ST2 may be connected to the electrode 22 of the first flange portion 13. At this time, it is preferable to apply solder paste to the inner surface of the electrode 23 of the storage section ST2 and the inner surface of the electrode 24. In this way, it is possible to select the chip capacitors and the number of them (up to three) to obtain the required characteristics, and store them in the storage section ST2. After storing them in the storage section ST2, as described above, the solder paste can be melted by a reflow process to fix them to the storage section ST2.

[0048] 9, a composite component 100a may be provided as a product in which a preselected chip capacitor is housed in the storage section ST2, or a composite component may be provided as a product in which a chip capacitor is not housed in the storage section ST1. In the latter case, the chip capacitor to be housed in the storage section ST2 is selected by the supplier, and the frequency characteristics can be fine-tuned.

[0049] In the composite component 100a of the second embodiment, similarly to the composite component 100 of the first embodiment, a resin may be provided on the surface of the winding 14.

[0050] (effect) FIG. 13 is a diagram showing an equivalent circuit when a bias T circuit is configured using the composite component 100a shown in FIG. 9. In FIG. 13, a signal line of the bias T circuit is provided between port P1 and port P2. A power supply is superimposed on the signal cable between port P1 and port P2. A capacitor C0 is connected in series between port P1 and port P2. The capacitance of the capacitor C0 is, for example, 0.1 μF. In FIG. 13, the chip capacitors and the capacitors on the circuit are denoted by the same reference symbols C1, C2, and C3.

[0051] A composite component 100a is connected to a node NS between one end of the capacitor C0 and the port P2, as indicated by a dashed line. By connecting the composite component 100a, the transmission characteristics in the GHz band can be improved.

[0052] Node NS corresponds to electrode 21 in Fig. 9. One end of coil L1 is connected to node NS. Coil L1 corresponds to winding 14 in Fig. 9. The other end of coil L1 is connected to node NC. Node NC corresponds to electrode 23 in Fig. 9.

[0053] One end of each of the capacitors C1, C2, and C3 is connected to the node NC. The other end (corresponding to the electrode 24) of each of the capacitors C1, C2, and C3 is connected to the reference potential. Therefore, in this example, the three capacitors C1, C2, and C3 are connected in parallel between the node NC and the reference potential. The three capacitors C1, C2, and C3 act as bypass capacitors.

[0054] The node NC is connected to a port DCP. The port DCP is connected to a power supply line of the bias T circuit. A predetermined DC voltage is output from the port DCP. The port DCP corresponds to the electrode 22 in FIG.

[0055] According to the above configuration, the coil L1 and the bypass capacitor can be integrated. Therefore, the coil L1 and the bypass capacitor can be brought closer to each other, and the distance between them can be reduced. This is expected to improve the transmission characteristics in the GHz band.

[0056] Third embodiment (composition) Fig. 14 is a diagram showing the appearance of a composite part according to a third embodiment of the present disclosure. Referring to Fig. 14, a composite part 100b according to the third embodiment has two storage sections ST3 and ST4, unlike the composite part 100 of the first embodiment and the composite part 100a of the second embodiment.

[0057] The core 10b of the composite component 100b has a first flange portion 13 and a second flange portion 12a. The first flange portion 13 has an electrode 21 (corresponding to a first electrode in the claims). The second flange portion 12a has a gap GA. The second flange portion 12a has an electrode 22 (corresponding to a second electrode in the claims) and an electrode 25, sandwiching the gap GA. The gap GA makes the electrode 22 and the electrode 25 independent of each other.

[0058] The storage section ST3 is provided between the first flange portion 13 and the second flange portion 12a. In this example, the storage section ST3 stores three chip capacitors C1, C2, and C3. The chip capacitors C1, C2, and C3 realize the capacitance C of the bypass capacitor. The chip capacitors C1, C2, and C3 may all have the same capacitance value or may have different capacitance values.

[0059] The sizes of the chip capacitors C1, C2, and C3 are, for example, 2012 size (long side 2.0 mm, short side 1.25 mm), 1608 size (long side 1.6 mm, short side 0.8 mm), and 1005 size (long side 1.0 mm, short side 0.5 mm).

[0060] The storage section ST4 is connected to the upper part of the core 10b. The storage section ST4 has an electrode 26 (corresponding to the fourth electrode in the claims) and an electrode 27 (corresponding to the third electrode in the claims). In this example, the storage section ST4 stores one 1140. The size of the chip coil 140 is, for example, 3225 size (long side 3.2 mm, short side 2.5 mm) or 2012 size (long side 2.0 mm, short side 1.25 mm).

[0061] One end 14a of the winding 14 is connected to the electrode 21. The other end of the winding 14 is connected to an electrode 27 on the top surface of the second flange portion 12a.

[0062] Fig. 15 is a side view of the composite part 100b shown in Fig. 14. Fig. 15 is a view of the composite part 100b viewed from the direction of the arrow Y19 in Fig. 14. As shown in Fig. 15, the composite part 100b appears rectangular. As shown in Figs. 14 and 15, the electrode 25 on the bottom of the second flange portion 12a is connected to the electrode 26 of the storage section ST4 via the wiring 31.

[0063] In FIG. 14, length D1 is the length of core 10b in the X-axis direction. Length D1 is, for example, 3.2 mm. Length D6 is the length of electrode 29 of storage section ST3 in the X-axis direction. Length D6 is, for example, 1.8 mm. Also, in FIG. 15, length D2 is the length of composite part 100b in the Z-axis direction. Length D2 is, for example, 2.3 mm. Length D3 is the length of composite part 100b in the Y-axis direction. Length D3 is, for example, 2.5 mm. Length D4 is the distance between electrodes of storage section ST4. Length D4 is, for example, 0.3 mm.

[0064] Here, the storage section ST3 will be described with reference to FIG. 16. FIG. 16 is a diagram for explaining the storage section ST3 in FIG. 14. As shown in FIG. 16, the storage section ST3 has an electrode 28 (corresponding to the sixth electrode in the claims) and an electrode 29 (corresponding to the fifth electrode in the claims). There is a space between the electrodes 28 and 29. The chip capacitor C1 is stored in this space. For example, the chip capacitor C1 can be stored in the space of the storage section ST3 by moving in the direction indicated by the arrow Y20. If solder paste is applied to the inner surface of the electrode 28 and the inner surface of the electrode 29, the stored chip capacitor C1 can be temporarily fixed. The temporarily fixed chip capacitor C1 can be fixed to the storage section ST3 by melting the solder paste by a reflow process. Only one chip capacitor C1 is drawn in FIG. 16. In this example, a maximum of three chip capacitors can be stored in the storage section ST3. When three chip capacitors C1, C2, and C3 are stored in the storage portion ST3, the chip capacitors C1, C2, and C3 are connected in parallel between the electrode 28 and the electrode 29.

[0065] FIG. 17 is a diagram for explaining the assembly procedure of the composite part 100b according to the third embodiment. First, the core 10b described with reference to FIG. 14 is prepared. As shown by the arrow Y21, the storage section ST4 is connected to the upper part of the core 10a. As a result, the other end 14b of the winding 14 is connected to the electrode 27 on the top surface of the second flange 12a. Next, as shown by the arrow Y22, the storage section ST3 is provided below the storage section ST4. At this time, the electrode 29 of the storage section ST3 is connected to the electrode 22 of the second flange section 12a, and the electrode 28 of the storage section ST3 is connected to the electrode 26 of the storage section ST4.

[0066] Regarding the storage section ST3, in this example, as shown in Fig. 14, a storage section ST3 is prepared in which three chip capacitors C1, C2, and C3 are stored and fixed. Then, electrode 28 of storage section ST3 is connected to electrode 26 of storage section ST4, and electrode 29 of storage section ST3 is connected to electrode 22 of second flange portion 12a. In another example, a storage section ST3 in which fewer than three chip capacitors are stored and fixed may be prepared, and electrode 28 of storage section ST3 may be connected to electrode 26 of storage section ST4, and electrode 29 of storage section ST3 may be connected to electrode 22 of second flange portion 12a.

[0067] In yet another example, a storage section ST3 not housing a chip capacitor may be prepared as shown in FIG. 16, and the electrode 28 of the storage section ST3 may be connected to the electrode 26 of the storage section ST4, and the electrode 29 of the storage section ST3 may be connected to the electrode 22 of the second flange portion 12a. At this time, it is preferable to apply solder paste to the inner surface of the electrode 28 of the storage section ST3 and the inner surface of the electrode 29 of the storage section ST3. In this way, it is possible to select the chip capacitors and the number of them (up to three) to obtain the required characteristics and to store them in the storage section ST3. After storing them in the storage section ST3, as described above, the solder paste can be melted by a reflow process to fix them to the storage section ST3.

[0068] 14, a composite component 100b may be provided as a product with a preselected chip capacitor housed in the storage section ST3, or a composite component may be provided as a product with no chip capacitor housed in the storage section ST3. In the latter case, the chip capacitor to be housed in the storage section ST3 is selected by the supplier, and the frequency characteristics can be fine-tuned.

[0069] 14, a composite component 100b with a preselected chip coil 140 housed in a storage portion ST4 may be provided as a product, or a composite component with no chip coil 140 housed in a storage portion ST4 may be provided as a product. In the latter case, the chip coil to be housed in the storage portion ST4 is selected by the supplier, and the frequency characteristics can be finely adjusted.

[0070] Depending on the size of the chip coil 140, free space for storing other chip components may be generated in the storage section ST4. For example, a chip resistor may be stored in this free space. This allows the chip resistor to be connected in parallel to the chip coil. By connecting the chip resistor in parallel to the chip coil, the resonance characteristics can be changed and the frequency characteristics can be improved.

[0071] (effect) FIG. 18 is a diagram showing an equivalent circuit when a bias T circuit is configured using the composite component 100b shown in FIG. 14. In FIG. 18, the signal line of the bias T circuit is between port P1 and port P2. A power supply is superimposed on the signal cable between port P1 and port P2. A capacitor C0 is connected in series between port P1 and port P2. The capacitance of the capacitor C0 is, for example, 0.1 μF. In FIG. 18, the chip capacitors and the capacitors on the circuit are given the same reference symbols C1, C2, and C3.

[0072] A composite component 100b is connected to a node NS between one end of the capacitor C0 and the port P2, as indicated by a dashed line. By connecting the composite component 100b, the transmission characteristics in the GHz band can be improved.

[0073] The node NS corresponds to the electrode 21 in Fig. 14. One end of the coil L1 is connected to the node NS. The coil L1 corresponds to the winding 14 in Fig. 14. The other end of the coil L1 is connected to one end of the coil L2.

[0074] The connection point between the other end of coil L1 and one end of coil L2 is node NL. Node NL corresponds to electrode 27 in Fig. 14. The other end of coil L2 is connected to node NC. Node NC corresponds to electrode 28 in Fig. 14.

[0075] One end of each of the capacitors C1, C2, and C3 is connected to the node NC. The other end (corresponding to the electrode 29) of each of the capacitors C1, C2, and C3 is connected to the reference potential. Therefore, in this example, three capacitors C1, C2, and C3 are connected in parallel between the node NC and the reference potential. The three capacitors C1, C2, and C3 act as bypass capacitors. Fewer than three capacitors may be included. It is sufficient to select the capacitance value and number required to improve the transmission characteristics.

[0076] The node NC is connected to a port DCP. The port DCP is connected to a power supply line of the bias T circuit. A predetermined DC voltage is output from the port DCP. The port DCP corresponds to the electrode 22 in FIG.

[0077] According to the above configuration, the coil L1, the coil L2, and the bypass capacitor can be integrated. Therefore, the coil L1, the coil L2, and the bypass capacitor can be brought close to each other, and the distance between them can be reduced. Since multiple coils L1 and L2 can be used, a high impedance can be maintained over a wide band. In addition, for the coil L2, an arbitrary inductance value can be realized by changing the chip coil. This is expected to improve the transmission characteristics in the GHz band.

[0078] Incidentally, coil L1 is a wire-wound coil, while coil L2 is a multilayer chip coil. Starting from the side closest to the signal line between ports P1 and P2, they are mounted in the following order: wire-wound coil L1, followed by multilayer chip coil L2. That is, as shown in Figure 18, by connecting coil L1 near node NS instead of coil L2, the effect of improving the transmission characteristics can be enhanced.

[0079] Compared to multilayer chip coils, the inductance value of a wire-wound coil can be easily set by adjusting the number of turns. For example, a relatively large inductance value can be obtained by increasing the number of turns. Wire-wound coils have a higher impedance than multilayer chip coils. Placing the coil with the higher impedance closer to the signal line can improve characteristics over a wide frequency range. Furthermore, by using the multilayer chip coil L2, it is expected that characteristics in the low frequency band will be improved. Furthermore, by making it an integrated component, space savings can be achieved.

[0080] (Fourth embodiment) (composition) 19 is a diagram showing the appearance of a composite part according to a fourth embodiment of the present disclosure. In the fourth embodiment, the composite part 100 according to the first embodiment is realized on a substrate K1.

[0081] The substrate K1 has a plurality of electrodes E1, E2, and E3. These electrodes E1 to E3 are provided on the surface of the substrate K1. The electrode E1 is an electrode pad connected to a power supply line of the bias T circuit. The electrode E2 is an electrode pad connected to a signal line of the bias T circuit. The electrode E3 is an electrode pad connected to a reference potential.

[0082] The electrode E1 corresponds to the second electrode pad of the present disclosure, the electrode E2 corresponds to the first electrode pad of the present disclosure, and the electrode E3 corresponds to the third electrode pad of the present disclosure.

[0083] The electrode 21 of the core 10 of the composite component 100 is connected to the electrode E2, which is a first electrode pad. The electrode 22 of the core 10 of the composite component 100 is connected to the electrode E1, which is a second electrode pad. As shown by the arrow Y13, the electrode 162 of the short chip 16 of the composite component 100 is connected to the electrode E3, which is a third electrode pad. The short chip 16 is provided between the first flange portion 13 and the second flange portion 12.

[0084] As shown by the arrow Y12, the storage unit ST1 is connected to the upper part of the core 10, and one end of the short chip 16 is connected to the storage unit ST1. In this example, the storage unit ST1 stores four chip capacitors C1, C2, C3, and C4. The chip capacitors C1, C2, C3, and C4 realize the capacitance C of the bypass capacitor.

[0085] As described above, the composite component 100 can be realized on the substrate K1. The composite component 100 includes the core 10 including the winding 14, the short chip 16, and the storage portion ST1.

[0086] Incidentally, the storage section ST1 and the short chip 16 may be connected in advance. Fig. 20 is a diagram showing the state in which the storage section ST1 and the short chip 16 are connected. One end of the short chip 16 is connected to the electrode 24 of the storage section ST1. In this state, the chip capacitors C1, C2, C3, and C4 are stored in the storage section ST1.

[0087] Fig. 21 is a diagram showing a state in which the storage section ST1 and the short chip 16 are connected and further the chip capacitors C1, C2, C3, and C4 are stored in the storage section ST1 to which the short chip 16 is connected as shown in Fig. 20, and by storing the chip capacitors C1, C2, C3, and C4 in the storage section ST1 to which the short chip 16 is connected as shown in Fig. 20, the state shown in Fig. 21 is obtained.

[0088] (effect) When a bias T circuit is configured using the composite component 100 shown in Fig. 19, it becomes the equivalent circuit state described with reference to Fig. 8. By connecting the composite component 100, it is possible to improve the transmission characteristics in the GHz band.

[0089] Fifth embodiment (composition) 22 is a diagram showing the external appearance of a composite component according to a fifth embodiment of the present disclosure. In the fifth embodiment, the composite component 100a according to the second embodiment is realized on a substrate K2.

[0090] The substrate K2 has a plurality of electrodes E4, E5, and E6. These electrodes E4 to E6 are provided on the surface of the substrate K2. The electrode E4 is an electrode pad connected to a signal line of the bias T circuit. The electrode E5 is an electrode pad connected to a power supply line of the bias T circuit. The electrode E6 is an electrode pad connected to a reference potential.

[0091] The electrode E5 corresponds to the second electrode pad of the present disclosure, the electrode E4 corresponds to the first electrode pad of the present disclosure, and the electrode E6 corresponds to the third electrode pad of the present disclosure.

[0092] The electrode 21 of the core 10a of the composite component 100a is connected to the electrode E4, which is a first electrode pad. The electrode 22 of the core 10a of the composite component 100 is connected to the electrode E5, which is a second electrode pad. As shown by the arrow Y18, the electrode 24 of the storage section ST2 is connected to the electrode E6, which is a third electrode pad. The electrode 23 of the storage section ST2 is connected to the electrode E5. The electrode 23 of the storage section ST2 is connected to the electrode 22 of the core 10a. In this example, the storage section ST2 stores three chip capacitors C1, C2, and C3. The chip capacitors C1, C2, and C3 realize the capacitance C of the bypass capacitor. As shown by the arrow Y17, the cover section 50 is connected to the top of the core 10a.

[0093] (effect) When a bias T circuit is configured using the composite component 100a shown in Fig. 22, it becomes the equivalent circuit state described with reference to Fig. 13. By connecting the composite component 100a, it is possible to improve the transmission characteristics in the GHz band.

[0094] Sixth embodiment (composition) 23 is a diagram showing the external appearance of a composite component according to a sixth embodiment of the present disclosure. In the sixth embodiment, the composite component 100b according to the third embodiment is realized on a substrate K3.

[0095] The substrate K3 has an electrode E7, an electrode E8, and an electrode E9. These electrodes E7 to E9 are provided on the surface of the substrate K3. The electrode E7 is an electrode pad connected to a signal line of the bias T circuit. The electrode E8 is an electrode pad connected to a reference potential. The electrode E9 is an electrode pad connected to a power supply line of the bias T circuit.

[0096] The electrode E7 corresponds to the first electrode pad of the present disclosure, the electrode E8 corresponds to the third electrode pad of the present disclosure, and the electrode E9 corresponds to the second electrode pad of the present disclosure.

[0097] Electrode 21 of core 10b of composite component 100b is connected to electrode E7, which is a first electrode pad. Electrode 22 of core 10b of composite component 100b is connected to electrode E8, which is a third electrode pad. Electrode 25 of core 10b of composite component 100b is connected to electrode E9, which is a second electrode pad.

[0098] As shown by the arrow Y22, the electrode 29 of the storage portion ST3 is connected to the electrode E8, which is a third electrode pad. The storage portion ST3 is provided between the first flange portion 13 and the second flange portion 12a. In this example, the storage portion ST3 stores three chip capacitors C1, C2, and C3. The chip capacitors C1, C2, and C3 provide the capacitance C of the bypass capacitor.

[0099] As shown by the arrow Y21, the storage portion ST4 is connected to the upper portion of the core 10b. At this time, the electrode 26 of the storage portion ST4 is connected to the electrode 28 of the storage portion ST2. The storage portion ST4 stores the chip coil 140, and the chip coil 140 and the coil formed by the winding 14 are connected in series.

[0100] (effect) When a bias T circuit is configured using the composite component 100b shown in Fig. 23, it becomes the equivalent circuit state described with reference to Fig. 18. By connecting the composite component 100b, it is possible to improve the transmission characteristics in the GHz band.

[0101] (Effect of composite parts) As described above, the composite component of the present disclosure integrates a wire-wound inductor for forming a bias T circuit and a bypass capacitor using a chip capacitor. By integrating them, the wire-wound inductor and the bypass capacitor can be provided adjacent to each other, shortening the distance between them. Any number of chip capacitors with any capacitance value are stored in the storage section. By appropriately selecting the chip capacitor, it is expected that the transmission characteristics in the GHz band will be improved.

[0102] The inventors have verified the difference in effect depending on the distance between the coil and the bypass capacitor. FIG. 24 is a diagram for explaining the effect obtained by the composite component of the present disclosure. In FIG. 24, the horizontal axis indicates frequency (GHz) and the vertical axis indicates S parameter S21 (dB). S21 is an index indicating the transmission characteristic from the input terminal to the output terminal. The characteristic m0 in FIG. 24 indicates the standard in the GHz band. When the value of S21 is equal to or greater than the characteristic m0, the standard is satisfied.

[0103] Characteristics m1 and m2 show the value of S21 when the same coil L1 and the same bypass capacitor are used, but the distance between them is different. Characteristic m1 shows the value of S21 when the distance between coil L1 and the bypass capacitor is 3 mm. Characteristic m1 has a lower value than characteristic m0 around 5 GHz, and does not satisfy the standard.

[0104] Characteristic m2 indicates the value of S21 when the composite component of the present disclosure is used. When the composite component of the present disclosure is used, the coil L1 and the bypass capacitor are adjacent to each other, so the distance between the coil L1 and the bypass capacitor is 0 mm. Therefore, the entire characteristic m2 has a value that exceeds characteristic m0, and satisfies the standard. Therefore, it can be seen that by using a composite component in which the coil and the bypass capacitor are combined into one and the distance between them is 0 mm, as in the present disclosure, good characteristics can be obtained in a wide band and at high frequencies. [Explanation of symbols]

[0105] 10, 10a, 10b Core 11 Winding core 12, 12a Second flange portion 13 First flange part 14 Windings 15 Resin 16 Short Chip 21~29 electrode 50 Lid 100, 100a, 100b composite parts 140 Chip coil C0 Capacitor C1~C4 Chip capacitors E1~E9 electrode K1, K2, K3 Boards L1, L2 coils ST1, ST2, ST3, ST4 storage compartment

Claims

1. A columnar core portion, a first flange portion and a second flange portion connected to both ends of the winding core portion in the first direction and protruding from the winding core portion in a second direction perpendicular to the first direction, when a direction in which the winding core portion extends is defined as a first direction; Including, The first flange portion has a first bottom surface, a first side surface standing from the first bottom surface, and a first top surface connected to the first side surface, the second flange portion has a second bottom surface, a second side surface standing from the second bottom surface, and a second top surface connected to the second side surface, moreover, a first electrode formed on the first bottom surface of the first flange portion; a second electrode formed on the second bottom surface of the second flange portion; A winding wound around the winding core; a first storage section capable of storing an electronic component, the first storage section covering the first top surface of the first flange section and the second top surface of the second flange section; A capacitor accommodated in the first accommodation portion; Including, the first storage section has a third electrode and a fourth electrode at both ends thereof; one end of the winding is connected to the first electrode, the other end of the winding is connected to the second electrode, and the third electrode is connected to the other end of the winding; A composite component, wherein the first electrode is an electrode connected to a signal line of a bias T circuit, the second electrode is an electrode connected to a power supply line of the bias T circuit, and the fourth electrode is an electrode connected to a reference potential.

2. A columnar core portion, a first flange portion and a second flange portion connected to both ends of the winding core portion in the first direction and protruding from the winding core portion in a second direction perpendicular to the first direction, when a direction in which the winding core portion extends is defined as a first direction; Including, The first flange portion has a first bottom surface, a first side surface standing from the first bottom surface, and a first top surface connected to the first side surface, the second flange portion has a second bottom surface, a second side surface standing from the second bottom surface, and a second top surface connected to the second side surface, moreover, a first electrode formed on the first bottom surface of the first flange portion; a second electrode formed on the second bottom surface of the second flange portion; A winding wound around the winding core; a first storage section capable of storing an electronic component connected to the first side surface of the first flange section in a second direction from the first side surface of the first flange section; A capacitor accommodated in the first accommodation portion; Including, the first storage section has a third electrode and a fourth electrode at both ends thereof, one end of the winding is connected to a first electrode, the other end is connected to a second electrode, and the third electrode is connected to the first electrode; A composite component, wherein the first electrode is an electrode connected to a power supply line of a bias T circuit, the second electrode is an electrode connected to a signal line of the bias T circuit, and the fourth electrode is an electrode connected to a reference potential.

3. A columnar core portion, a first flange portion and a second flange portion connected to both ends of the winding core portion in the first direction and protruding from the winding core portion in a second direction perpendicular to the first direction, when the extension direction of the winding core portion is defined as a first direction; Including, The first flange portion has a first bottom surface, a first side surface standing from the first bottom surface, and a first top surface connected to the first side surface, the second flange portion has a second bottom surface, a second side surface standing from the second bottom surface, and a second top surface connected to the second side surface, moreover, a first electrode formed on the first bottom surface of the first flange portion; a second electrode formed on the second bottom surface of the second flange portion; A winding wound around the winding core; a first storage section provided between the first flange section and the second flange section and capable of storing an electronic component; a second storage section that covers the first top surface of the first flange section and the second top surface of the second flange section and is capable of storing an electronic component; A capacitor accommodated in the first accommodation portion; an inductor accommodated in the second accommodation section; a third electrode and a fourth electrode formed at both ends of the second storage portion; Including, the first storage section has a fifth electrode and a sixth electrode at both ends thereof; one end of the winding is connected to the first electrode, the other end of the winding is connected to the third electrode, and the sixth electrode is connected to the fourth electrode; A composite component, wherein the first electrode is an electrode connected to a signal line of a bias T circuit, the second electrode is an electrode connected to a reference potential, the fourth electrode is an electrode connected to a power supply line of the bias T circuit, and the fifth electrode is an electrode connected to a reference potential.

4. A substrate; a first electrode pad provided on the substrate and connected to a signal line of a bias T circuit; a second electrode pad provided on the substrate and connected to a power supply line of a bias T circuit; a third electrode pad provided on the substrate and connected to a reference potential; Further comprising: The first electrode is connected to the first electrode pad, the second electrode is connected to the second electrode pad, and the fourth electrode is connected to the third electrode pad. The composite part according to claim 1 .

5. A substrate; a first electrode pad provided on the substrate and connected to a signal line of a bias T circuit; a second electrode pad provided on the substrate and connected to a power supply line of a bias T circuit; a third electrode pad provided on the substrate and connected to a reference potential; Further comprising: The second electrode is connected to the first electrode pad, the first electrode is connected to the second electrode pad, and the fourth electrode is connected to the third electrode pad. The composite part according to claim 2 .

6. A substrate; a first electrode pad provided on the substrate and connected to a signal line of a bias T circuit; a second electrode pad provided on the substrate and connected to a power supply line of a bias T circuit; a third electrode pad provided on the substrate and connected to a reference potential; Further comprising: The first electrode is connected to the first electrode pad, the fourth electrode is connected to the second electrode pad, and the second electrode and the fifth electrode are connected to the third electrode pad. The composite part according to claim 3.

7. Further including a short tip, One end of the short chip is electrically connected to the fourth electrode, and the other end of the short chip is connected to a reference potential. The composite part according to claim 1 or 4.

8. The capacitor accommodated in the first accommodation section is connected in parallel between the third electrode and the fourth electrode The composite part according to claim 1 or 4.

9. The capacitor accommodated in the first accommodation section is connected in parallel between the third electrode and the fourth electrode The composite part according to claim 2 or 5.

10. The capacitor accommodated in the first accommodation section is connected in parallel between the fifth electrode and the sixth electrode The composite part according to claim 3 or 6.

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