Substrate processing method and substrate processing apparatus

Abstract

To reduce events in which a solute contained in processing liquid for forming a holding layer for taking in foreign matter on an upper surface of a substrate reaches the substrate separately from processing liquid supplied to the substrate.SOLUTION: A substrate processing method comprises a first step, a second step, and a third step. The first step includes: a step for supplying processing liquid for forming a holding layer by solidification or curing to a first upper surface which is an upper surface of a first substrate; a step for rotating the first substrate to scatter some of the processing liquid supplied to the first upper surface outward from the first upper surface; and a step for forming the holding layer on the first upper surface by solidification or curing of the processing liquid left on the first upper surface. In the second step, the holding layer on the first upper surface is removed. The third step includes: a step for supplying cleaning liquid for cleaning a guard surface to a second upper surface which is an upper surface of a second substrate; and a step for rotating the second substrate to scatter the cleaning liquid from the second upper surface to the guard surface.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] Both the method and the apparatus disclosed herein relate to techniques for processing substrates, such as semiconductor wafers, glass substrates for liquid crystal displays, substrates for flat panel displays (FPDs) used in organic electroluminescence (EL) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (FEDs), and substrates for solar cells. [Background technology]

[0002] In order to appropriately perform various processes on a substrate, the substrate is cleaned before the process. Examples of the cleaning include removing chemicals used in other processes performed before the process, removing organic residues that are to be removed by the chemicals, and removing foreign matter commonly known as particles.

[0003] As the patterns formed on the substrate become finer and more complex, the lower limit of the particles to be removed becomes smaller. As a method for removing such minute particles, a method has been proposed in which a layer for retaining the particles (hereinafter tentatively referred to as a "retention layer") is first formed on the upper surface of the substrate, and then the retention layer is peeled off together with the particles.

[0004] For example, Patent Document 1 exemplifies a process of forming a treatment film having a function similar to that of a retention layer, peeling off the treatment film, and further removing the residue. For example, the treatment film is formed by supplying a treatment liquid to a substrate while rotating the substrate, spreading the treatment liquid on the substrate by centrifugal force to form a liquid film, and solidifying or curing the liquid film on the substrate. The treatment film is peeled off from the substrate by a stripping liquid. The residue of the treatment film remaining on the substrate after the treatment film is removed by the stripping liquid is dissolved and removed by an organic solvent.

[0005] Patent Document 1 discloses a first guard and a second guard that receive liquid splashed outward from the substrate. These guards are raised and lowered separately between their respective upper and lower positions. The first guard surrounds a spin base that rotates the substrate and is surrounded by the second guard. Patent Document 1 does not specify the positions of these guards when a processing liquid, a stripping liquid, or an organic solvent is supplied to the substrate.

[0006] Patent Document 2 was disclosed as a prior art document in Patent Document 1. Patent Document 2 discloses a particle retention layer having a function similar to that of a retention layer. The particle retention layer is formed on the upper surface of a substrate by solidification or hardening of a processing liquid. The particle retention layer is peeled off by a stripping liquid, and the residue remaining on the substrate after the particle retention layer is removed is removed by a residue removal.

[0007] Patent Document 2 also discloses a first guard and a second guard similar to those of Patent Document 1. When a processing liquid, a stripping liquid, or a residue removal liquid is supplied to the substrate, each of these guards is disposed in its respective upper position. In this arrangement, the processing liquid, the stripping liquid, and the residue removal liquid splashing outward from the substrate are all received by the first guard.

[0008] Patent Document 3 discloses a technique that is described in a modified embodiment. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] JP 2021-153139 A [Patent Document 2] JP 2019-62171 A [Patent Document 3] JP 2015-35474 A Summary of the Invention [Problem to be solved by the invention]

[0010] In Patent Document 2, the first guard is moved to the lower position, and gas is supplied to the substrate to perform spin drying. The residue removal liquid may be received by the second guard during spin drying.

[0011] However, since the processing liquid, stripping liquid, and residue removal liquid are all received by the first guard, solutes contained in the processing liquid or remaining on the particle retention layer adhere to the first guard. It is assumed that the process of removing particles using the particle retention layer (hereinafter also tentatively referred to as the "particle removal process") will be performed multiple times. It is assumed that the solutes that adhere to the first guard in the preceding particle removal process will peel off and reach the substrate when the processing liquid is supplied to the substrate in the following particle removal process.

[0012] This phenomenon may reduce the ability of the treatment film described in Patent Document 1 and the particle retention layer described in Patent Document 2 to remove particles from the substrate. For example, when a treatment liquid is supplied to a substrate having a solute attached thereto that has peeled off from the first guard, it is considered that there is an increased possibility that the adhesion between the retention layer formed from the treatment liquid and the substrate is impaired.

[0013] One of the reasons for the increased possibility is that the processing liquid supplied to the substrate contains solutes that were originally dissolved in the processing liquid (hereinafter also tentatively referred to as "dissolved solutes"; however, in this specification, dispersed solutes are also included), as well as solutes that peeled off the first guard and adhered to the substrate (hereinafter also tentatively referred to as "peeling solutes"), which solidify or harden to become a retention layer. The peeling solutes have a larger particle size than the dissolved solutes, since they were not dissolved or dispersed in the processing liquid. Therefore, the retention layer obtained from the processing liquid containing not only the dissolved solutes but also the peeling solutes has poor flatness, especially on the side that contacts the substrate, compared to the retention layer obtained when the peeling solute is not included. Poor flatness of the retention layer on the side that contacts the substrate leads to poor adhesion between the retention layer and the substrate, which is likely to impair the ability of the retention layer to hold particles on the substrate and remove them from the substrate.

[0014] Patent Document 2 exemplifies the heating of the processing liquid, and Patent Document 1 exemplifies the case where the processing liquid does not need to be heated. However, it is presumed that the above phenomenon occurs regardless of whether the processing liquid is heated or not.

[0015] The technology disclosed herein has been developed in consideration of the anticipated occurrence of the above-mentioned phenomenon, and aims to reduce the phenomenon in which solutes contained in the processing liquid for forming the retention layer reach the substrate separately from the processing liquid supplied to the substrate. [Means for solving the problem]

[0016] The substrate processing method disclosed herein is a method in a substrate processing apparatus including a rotation device that rotates a substrate having an upper surface around a vertical rotation axis, and a first guard that surrounds the rotation device when viewed along the rotation axis and has a surface facing the rotation device, in which a retention layer that captures foreign matter on the upper surface of the substrate is formed on the upper surface, and a process is performed to remove the foreign matter together with the retention layer.

[0017] A first aspect of the substrate processing method according to the present disclosure includes a first step, a second step, and a third step. The first step includes: supplying a processing liquid containing a solute and a solvent, which forms the retention layer by solidification or hardening, to the first upper surface, which is the upper surface of the first substrate; rotating the first substrate to scatter a part of the processing liquid supplied to the first upper surface outward from the first upper surface; and forming the retention layer on the first upper surface by the solidification or hardening of the processing liquid remaining on the first upper surface. The second step is a step of removing the retention layer on the first upper surface. The third step includes: supplying a cleaning liquid for cleaning the surface to the second upper surface, which is the upper surface of the second substrate; and rotating the second substrate to scatter the cleaning liquid from the second upper surface to the surface.

[0018] A second aspect of the substrate processing method according to the present disclosure is the first aspect, in which the substrate processing apparatus further includes a second guard surrounding the first guard when viewed along the rotation axis. The first guard can be located either at an upper position or at a lower position lower than the upper position. When the first guard is located at the upper position, the first guard is located between the holding position and the second guard when viewed along a direction perpendicular to the rotation axis from a holding position where the rotating device holds the substrate. When the first guard is located at the lower position, the first guard is not located between the holding position and the second guard when viewed along the direction. When the first step is performed, the first guard is located at the upper position. When the second step is performed, the first guard is located at the lower position. When the third step is performed, the first guard is located at the upper position.

[0019] A third aspect of the substrate processing method according to the present disclosure is the first or second aspect, wherein the third step is performed after the first step and the second step, and the second substrate is the first substrate.

[0020] A fourth aspect of the substrate processing method according to the present disclosure is the first or second aspect, wherein the third step is performed before the first step and the second step, and the second substrate is different from the first substrate.

[0021] A fifth aspect of the substrate processing method according to the present disclosure is any one of the first to fourth aspects, in which the second step includes the steps of: peeling off the retention layer on the first upper surface with a peeling liquid; and removing residues on the first upper surface after the retention layer has been peeled off with a residue removing liquid. The residue removing liquid is used as the cleaning liquid.

[0022] A sixth aspect of the substrate processing method according to the present disclosure is any of the first to fifth aspects, wherein in the third step, the cleaning liquid on the second upper surface is dried while rotating the second substrate to splash the cleaning liquid from the second upper surface onto the surface, or after the splashing.

[0023] The substrate processing apparatus according to the present disclosure includes a rotation device that rotates a substrate having an upper surface about a vertical rotation axis, a first guard that surrounds the rotation device when viewed along the rotation axis and has a surface facing the rotation device, a second guard that surrounds the first guard when viewed along the rotation axis, a processing liquid discharge nozzle that is disposed above the rotation device and discharges a processing liquid downward, a stripping liquid discharge nozzle that is disposed above the rotation device and discharges a stripping liquid downward, and a cleaning liquid discharge nozzle that is disposed above the rotation device and discharges a cleaning liquid downward.

[0024] The remover removes a retention layer formed on the first upper surface, which is the upper surface of a first substrate. The retention layer is formed on the first upper surface by solidifying or curing the treatment liquid on the first upper surface, and captures foreign matter on the first upper surface. The treatment liquid includes a solute and a solvent.

[0025] In a first aspect of the substrate processing apparatus according to the present disclosure, when the processing liquid discharge nozzle discharges the processing liquid and supplies it to the first upper surface, and the rotating device rotates the first substrate at a speed at which the processing liquid scatters from the first upper surface, the first guard is located at the upper position. When the stripping liquid discharge nozzle discharges the stripping liquid and supplies it to the first upper surface, and the rotating device rotates the first substrate at a speed at which the stripping liquid scatters from the first upper surface, the first guard is located at a lower position below the upper position. When the cleaning liquid discharge nozzle discharges the cleaning liquid and supplies it to a second upper surface, which is the upper surface of the second substrate, and the rotating device rotates the second substrate at a speed at which the cleaning liquid scatters from the second upper surface, the first guard is located at the upper position.

[0026] When the first guard is located at the upper position, the first guard is between the holding position and the second guard when viewed along a direction perpendicular to the rotation axis from a holding position where the rotating device holds the substrate. When the first guard is located at the lower position, the first guard is not between the holding position and the second guard when viewed along the direction. The cleaning liquid has a component that removes the solute attached to the surface of the first guard facing the rotating device.

[0027] A second aspect of the substrate processing apparatus according to the present disclosure is the first aspect, further comprising a control device that controls the rotation of the substrate by the rotation device, the position of the first guard, the position of the second guard, the discharge of the processing liquid from the processing liquid discharge nozzle, the discharge of the stripping liquid from the stripping liquid discharge nozzle, and the discharge of the cleaning liquid from the cleaning liquid discharge nozzle.

[0028] A third aspect of the substrate processing apparatus according to the present disclosure is the first or second aspect, in which the second substrate is the first substrate.

[0029] A fourth aspect of the substrate processing apparatus according to the present disclosure is the first or second aspect thereof, in which the second substrate and the first substrate are different.

[0030] A fifth aspect of the substrate processing apparatus according to the present disclosure is any of the first to fourth aspects, further comprising a residue removal liquid ejection nozzle that ejects downward a residue removal liquid to remove residue on the first upper surface after the retention layer formed on the first upper surface is peeled off.

[0031] A sixth aspect of the substrate processing apparatus according to the present disclosure is the fifth aspect, in which the residue removing liquid is used as the cleaning liquid, and the residue removing liquid discharge nozzle also serves as the cleaning liquid discharge nozzle. Effect of the Invention

[0032] Any of the first, third and fourth aspects of the substrate processing method according to the present disclosure reduces the occurrence of solutes contained in the processing liquid for forming a retention layer reaching the substrate separately from the processing liquid supplied to the substrate.

[0033] According to the second aspect of the substrate processing method of the present disclosure, in the first step, contamination of the upper surface caused by attachment of the second guard is suppressed, and a reduction in the ability of the retention layer to capture foreign matter is suppressed.

[0034] According to the fifth aspect of the substrate processing method according to the present disclosure, there is no need to provide a nozzle for discharging a cleaning liquid separately from a nozzle for discharging a residue removing liquid, and therefore the cost of manufacturing the substrate processing apparatus is reduced.

[0035] A sixth aspect of the substrate processing method according to the present disclosure is directed to cleaning the top surface.

[0036] Any of the first, third and fourth aspects of the substrate processing apparatus according to the present disclosure reduces the occurrence of solutes contained in the processing liquid for forming the retention layer reaching the substrate separately from the processing liquid supplied to the substrate.

[0037] The second aspect of the substrate processing apparatus according to the present disclosure contributes to cooperation between rotation of the substrate, arrangement of the first guard and the second guard, discharge of the processing liquid, discharge of the stripping liquid, and discharge of the cleaning liquid.

[0038] According to the fifth aspect of the substrate processing method according to the present disclosure, the retention layer formed on the upper surface is peeled off, and then the residue on the upper surface is removed.

[0039] According to the sixth aspect of the substrate processing method of the present disclosure, there is no need to provide a nozzle for discharging a cleaning liquid separately from a nozzle for discharging a residue removing liquid, and therefore the cost of manufacturing the substrate processing apparatus is reduced. [Brief description of the drawings]

[0040] [Figure 1] 1 is a plan view illustrating an example of a configuration of a substrate processing apparatus. [Diagram 2] FIG. 2 is a side view illustrating a schematic configuration of a chamber. [Diagram 3] FIG. 2 is a block diagram illustrating a main control system of the substrate processing apparatus. [Figure 4] 1 is a flow chart illustrating a process for cleaning a substrate in a chamber. [Diagram 5] 5A to 5C are cross-sectional views each showing a schematic example of the state inside a chamber for each step executed in the flowchart of FIG. 4. [Figure 6] 5A to 5C are cross-sectional views each showing a schematic example of the state inside a chamber for each step executed in the flowchart of FIG. 4. [Figure 7] 5A to 5C are cross-sectional views each showing a schematic example of the state inside a chamber for each step executed in the flowchart of FIG. 4. [Figure 8] 5A to 5C are cross-sectional views each showing a schematic example of the state inside a chamber for each step executed in the flowchart of FIG. 4. [Figure 9] 5A to 5C are cross-sectional views each showing a schematic example of the state inside a chamber for each step executed in the flowchart of FIG. 4. [Figure 10]5A to 5C are cross-sectional views each showing a schematic example of the state inside a chamber for each step executed in the flowchart of FIG. 4. [Figure 11] 5A to 5C are cross-sectional views each showing a schematic example of the state inside a chamber for each step executed in the flowchart of FIG. 4. [Figure 12] 5A to 5C are cross-sectional views each showing a schematic example of the state inside a chamber for each step executed in the flowchart of FIG. 4. [Figure 13] 5A to 5C are cross-sectional views each showing a schematic example of the state inside a chamber for each step executed in the flowchart of FIG. 4. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0041] Hereinafter, each embodiment of the present disclosure will be described with reference to the attached drawings. The components described in each embodiment are merely examples, and the scope of the present disclosure is not intended to be limited to only the examples. The drawings are merely schematic. In the drawings, the dimensions and numbers of each part may be exaggerated or simplified as necessary to facilitate understanding. In the drawings, parts having similar configurations and functions are given the same reference numerals, and duplicated descriptions are appropriately omitted.

[0042] In this specification, expressions indicating a relative or absolute positional relationship (e.g., "parallel," "orthogonal," "center") not only indicate the exact positional relationship, but also indicate a state including tolerances and a state in which the same degree of functionality is obtained. Expressions indicating that two or more things are in an equal state (e.g., "same," "equal," "homogeneous") not only indicate a state in which they are strictly equal quantitatively, but also indicate a state in which there is a difference that allows for tolerances or similar functions, unless otherwise specified.

[0043] Unless otherwise specified, expressions indicating a shape (such as "rectangular" or "cylindrical") not only represent a strict geometrical shape, but also represent a shape having, for example, irregularities or chamfers, within the scope of obtaining the same degree of effect.

[0044] The expressions "comprise," "include," "have," "includes," or "have" of one element are not exclusive expressions excluding the presence of other elements.

[0045] Unless otherwise specified, the expression "connected" includes a state in which two elements are in contact with each other, as well as a state in which two elements are separated by another element.

[0046] 1 is a plan view illustrating a schematic configuration of a substrate processing apparatus 1. The substrate processing apparatus 1 is a single-wafer processing apparatus that processes, one by one, substrates W as processing objects. For example, the substrates W are substantially disk-shaped semiconductor substrates.

[0047] The substrate W is not necessarily limited to a semiconductor substrate. For example, various substrates such as a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk can be applied to the substrate W. The shape of the substrate is also not limited to a disk shape, and various shapes such as a rectangular plate shape can be adopted.

[0048] <1. Configuration of the substrate processing apparatus 1> The substrate processing apparatus 1 includes a load port 105, an indexer section 103, a processing section 102, a transfer section 104, a transport section 106, and a controller 107. The controller 107 comprehensively controls the operations of the components of the substrate processing apparatus 1 other than the controller 107.

[0049] The processing section 102 has a plurality of, for example, four towers 20. In a plan view, the four towers 20 are arranged around the transport section 106. Each of the towers 20 has a plurality of, for example, three chambers 2 stacked vertically in a plan view. The chambers 2 function as processing chambers for performing processing on the substrate W.

[0050] A plurality of, for example, four, carriers C are loaded into the load port 105. As the carriers C, a FOUP (Front Opening Unified Pod) that stores the substrates W in an enclosed space, a SMIF (Standard Mechanical Interface) pod, or an OC (Open Cassette) that exposes the substrates W to the outside air may be used.

[0051] The substrate processing apparatus 1 includes an indexer robot 109. The indexer robot 109 moves mainly along the direction in which the carriers C are lined up in the indexer section 103 (see arrow F1 in FIG. 1). The indexer robot 109 moves between the indexer section 103 and the transfer section 104 (see arrow F2 in FIG. 1). The indexer robot 109 has a function of holding a substrate W. The indexer robot 109 transports the substrate W between the carriers C in the indexer section 103.

[0052] The substrate processing apparatus 1 includes a transfer robot 108. The transfer robot 108 has a function of holding a substrate W. The transfer robot 108 moves between the delivery section 104 and the transfer section 106 (see arrow F3 in FIG. 1).

[0053] The transfer robot 108 transfers the substrate W between the indexer robot 109 and the transfer section 104. The indexer robot 109 transfers the substrate W between the transfer robot 108 and the transfer section 104.

[0054] The transfer robot 108 moves between the transfer section 106 and each of the chambers 2 (see arrow F4 in FIG. 1). The transfer robot 108 delivers and receives the substrate W between each of the chambers 2.

[0055] The transfer robot 108 receives the substrate W from the indexer robot 109 and transfers it into any one of the chambers 2. The transfer robot 108 transfers the processed substrate W out of the chamber 2 and passes it to the indexer robot 109.

[0056] <2. Configuration of Chamber 2> 2 is a side view illustrating a schematic configuration of the chamber 2. The chamber 2 has a spin chuck 4, a processing liquid discharge nozzle 5, a stripping liquid discharge nozzle 6, a processing cup 40, an opposing member 50, a gas discharge nozzle 60, a rinsing liquid discharge nozzle 65, and a residue removal liquid discharge nozzle 7.

[0057] The spin chuck 4 has a function of holding one substrate W to be processed in a horizontal position and a function of rotating it about a vertical rotation axis A1. The substrate W held by the spin chuck 4 rotates about the rotation axis A1 by the rotation of the spin chuck 4. For example, the substrate W is held horizontally by the spin chuck 4 with its center positioned on the rotation axis A1. The spin chuck 4 functions as a rotation device that rotates the substrate W to be processed about the rotation axis A1.

[0058] The spin chuck 4 includes a chuck pin 8, a spin base 9, a rotating shaft 10, and a spin motor 11. The spin motor 11 has a function of rotating the rotating shaft 10 about a rotation axis line A1. The rotating shaft 10 extends vertically along the rotation axis line A1 and is, for example, a hollow shaft. The upper end of the rotating shaft 10 is connected to the center of the lower surface of the spin base 9.

[0059] The spin base 9 has a disk shape extending horizontally. A plurality of chuck pins 8 are arranged at intervals in the circumferential direction on the peripheral portion of an upper surface 9a of the spin base 9. The chuck pins 8 grip the substrate W above the spin base 9 and release the grip of the substrate W.

[0060] The chuck pin 8 is fixed above the spin base 9 and functions as an end of the spin chuck 4 that holds the substrate W above the spin base 9. The position 8a of the upper end of the chuck pin 8 can be considered as an example of a holding position where the spin chuck 4 holds the substrate W.

[0061] The chuck pins 8 grip the substrate W, the spin motor 11 applies a rotational force to the rotating shaft 10, and the spin base 9 rotates, whereby the substrate W rotates about the rotation axis A1.

[0062] The processing liquid discharge nozzle 5 is disposed above the spin chuck 4. The processing liquid discharge nozzle 5 has a function of discharging the processing liquid downward. When the substrate W is held by the spin chuck 4 and the processing liquid discharge nozzle 5 is positioned opposite the substrate W as described below, the processing liquid discharge nozzle 5 can be said to have a function of supplying the processing liquid to the upper surface Wa of the substrate W by this function. As described in detail below, the processing liquid contains a solute and a volatile solvent, and solidifies or hardens to become a retention layer.

[0063] The remover liquid discharge nozzle 6 is disposed above the spin chuck 4. The remover liquid discharge nozzle 6 has a function of discharging the remover liquid downward. When the substrate W is held by the spin chuck 4 and the remover liquid discharge nozzle 6 is located opposite to the upper surface Wa of the substrate W as described later, the remover liquid discharge nozzle 6 can be said to have a function of supplying the remover liquid to the upper surface Wa by this function. The remover liquid peels off the retention layer from the substrate W, as described later in detail.

[0064] The processing liquid discharge nozzle 5 is moved by a nozzle moving mechanism 12. The nozzle moving mechanism 12 moves the processing liquid discharge nozzle 5, for example, between a central position and a retracted position, in a horizontal direction, for example, a direction perpendicular to the rotation axis A1. The nozzle moving mechanism 12 is provided in, for example, the chamber 2.

[0065] The central position of the processing liquid discharge nozzle 5 coincides with the rotation axis A1 in a plan view, for example. When the processing liquid discharge nozzle 5 is at the central position and the substrate W is held by the spin chuck 4 and rotates, the processing liquid discharge nozzle 5 faces, for example, the center of rotation of the upper surface Wa.

[0066] The processing liquid discharge nozzle 5 in the retracted position does not face the upper surface Wa when the substrate W is held by the spin chuck 4. For example, the retracted position is located outside the spin base 9 in a plan view.

[0067] A processing liquid supply pipe 13 is connected to the processing liquid discharge nozzle 5. A valve 14 is provided in the processing liquid supply pipe 13. The processing liquid is supplied to the processing liquid supply pipe 13 from the opposite side of the valve 14 to the processing liquid discharge nozzle 5 by a mechanism (not shown). The valve 14 adjusts the flow rate of the processing liquid flowing through the processing liquid supply pipe 13, and typically opens and closes the flow path of the processing liquid supply pipe 13. The valve 14 is provided in the chamber 2, for example.

[0068] The stripping solution discharge nozzle 6 is moved by a nozzle moving mechanism 15. The nozzle moving mechanism 15 moves the stripping solution discharge nozzle 6, for example, between a central position and a retracted position, in a horizontal direction, for example, in a direction perpendicular to the rotation axis A1. The nozzle moving mechanism 15 is provided in, for example, the chamber 2.

[0069] The central position of the peeling solution discharge nozzle 6 coincides with the rotation axis A1 in a plan view, for example. When the peeling solution discharge nozzle 6 is at the central position and the substrate W is held by the spin chuck 4 and rotates, the peeling solution discharge nozzle 6 faces, for example, the center of rotation of the upper surface Wa.

[0070] The stripping solution discharge nozzle 6 in the retracted position does not face the upper surface Wa when the substrate W is held by the spin chuck 4. For example, the retracted position of the stripping solution discharge nozzle 6 is outside the spin base 9 in a plan view and is different from the retracted position of the processing solution discharge nozzle 5.

[0071] A stripping liquid supply pipe 16 is connected to the stripping liquid discharge nozzle 6. A valve 17 is provided in the stripping liquid supply pipe 16. The stripping liquid is supplied to the stripping liquid supply pipe 16 from the opposite side of the valve 17 to the stripping liquid discharge nozzle 6 by a mechanism (not shown). The valve 17 adjusts the flow rate of the processing liquid flowing through the stripping liquid supply pipe 16, and typically opens and closes the flow path of the stripping liquid supply pipe 16. The valve 17 is provided in the chamber 2, for example.

[0072] Processing cup 40 includes guards 41 and 42, cups 45 and 46, and an outer wall member 43. Guards 41 and 42 have a function of receiving liquid splashed outward from substrate W (more specifically, upper surface Wa) held by spin chuck 4. Cup 45 receives liquid guided downward by guard 41. Cup 46 receives liquid guided downward by guard 42. The liquid received by cups 45 and 46 may be collected, for example, by a known collection mechanism (not shown) and reused. Such reuse contributes to reducing the usage of processing liquid, stripping liquid, and also the residue removal liquid and rinsing liquid described below. Such reduction in usage contributes to cost reduction.

[0073] The guard 41 surrounds the outside of the spin chuck 4 and has, for example, a cylindrical shape. The guard 41 surrounds the spin chuck 4 when viewed along the rotation axis A1. The guard 42 surrounds the outside of the guard 41 and has, for example, a cylindrical shape. The guard 42 surrounds the guard 41 when viewed along the rotation axis A1.

[0074] The cup 45 surrounds the outside of the spin chuck 4 on the side closer to the spin chuck 4 than the guard 41, and has a groove shape that opens upward. The cup 46 surrounds the outside of the guard 41 on the side opposite to the spin chuck 4 than the guard 41, and has a groove shape that opens upward below the guard 42. For example, the cups 45 and 46 are connected to the guard 41.

[0075] Guards 41, 42 are raised and lowered separately by a guard lifting mechanism 44. The guard lifting mechanism 44 raises and lowers guard 41 between an upper position and a lower position that is lower than the upper position. Guard 41 can be positioned in either of its upper and lower positions. The guard lifting mechanism 44 raises and lowers guard 42 between an upper position and a lower position that is lower than the upper position. Guard 42 can be positioned in either of its upper and lower positions. The guard lifting mechanism 44 is provided in, for example, chamber 2.

[0076] When the guard 42 is in its lower position, the guard 41 is also in its lower position, and the upper ends of the guards 41 and 42 are lower than the holding position 8a. Setting the guards 41 and 42 in such a lower position facilitates attachment and detachment of the substrate W to and from the spin chuck 4.

[0077] When the guard 42 is in its upper position, the guard 41 can be located at any position from the upper position to the lower position. For example, when the guards 41, 42 are in their upper positions and liquid splashes outward from the upper surface Wa of the substrate W held by the spin chuck 4, the splashed liquid is mainly received by the guard 41. For example, when the guard 42 is in its upper position and the guard 41 is in its lower position and liquid splashes outward from the upper surface Wa of the substrate W held by the spin chuck 4, the splashed liquid is mainly received by the guard 42.

[0078] The guard lifting mechanism 44 is realized, for example, using a ball screw mechanism attached to guard 41 and a motor that provides driving force to the ball screw mechanism (neither shown), and a ball screw mechanism attached to guard 42 and a motor that provides driving force to the ball screw mechanism (neither shown).

[0079] The outer wall member 43 surrounds the guards 41, 42 and the cups 45, 46 from the outside thereof and has, for example, a cylindrical shape.

[0080] The facing member 50 is provided above the spin chuck 4. The facing member 50 includes a facing surface 50a facing the spin base 9, more specifically, the upper surface 9a. The facing surface 50a is positioned approximately horizontally. The facing surface 50a faces, for example, the substrate W held by the spin chuck 4, and has a disk shape having approximately the same diameter as the substrate W or a diameter larger than the substrate W.

[0081] A hollow shaft 51 is fixed to the opposing member 50 on the side opposite to the opposing surface 50a. A communication hole 50b is formed in the opposing member 50. The communication hole 50b passes through the opposing member 50 from top to bottom and communicates with the internal space of the hollow shaft 51. For example, in a plan view, the communication hole 50b and the hollow shaft 51 overlap with the rotation axis A1.

[0082] The facing member 50 is raised and lowered by a facing member lifting mechanism 52. The facing member lifting mechanism 52 has a function of disposing the facing member 50 at any position (height) between an upper position and a lower position. The facing member lifting mechanism 52 is provided in the chamber 2, for example.

[0083] The lower position of the opposing member 50 is a position where the opposing surface 50a is closest to the upper surface 9a within the movable range of the opposing member 50. When the opposing member 50 is in the lower position and the substrate W is held by the spin chuck 4, the opposing surface 50a is above the upper surface Wa.

[0084] The upper position of the facing member 50 is the position where the facing surface 50a is farthest from the upper surface 9a within the movable range of the facing member 50. The upper position of the facing member 50 can also be considered as a retracted position of the facing member 50. When the facing member 50 is in the upper position and the substrate W is held by the spin chuck 4, the distance between the facing surface 50a and the upper surface Wa allows both the processing solution discharge nozzle 5 and the stripping solution discharge nozzle 6 to move horizontally above the upper surface Wa.

[0085] The opposing member lifting mechanism 52 is realized, for example, using a support member (not shown) that supports the hollow shaft 51, a ball screw mechanism (not shown) attached to the support member, and an electric motor (not shown) that provides a driving force to the ball screw mechanism.

[0086] The residue removing liquid discharge nozzle 7, the gas discharge nozzle 60, and the rinsing liquid discharge nozzle 65 are all disposed above the spin chuck 4. More specifically, the residue removing liquid discharge nozzle 7, the gas discharge nozzle 60, and the rinsing liquid discharge nozzle 65 are all housed in a nozzle housing member 53. The nozzle housing member 53 is inserted into the hollow shaft 51.

[0087] The respective outlets of the residue removing liquid discharge nozzle 7, the gas discharge nozzle 60, and the rinsing liquid discharge nozzle 65 are exposed downward from the lower end portion of the nozzle housing member 53. The lower end portion of the nozzle housing member 53 faces the center of the upper surface 9a in a plan view. For example, when the substrate W is held on the spin chuck 4, the respective outlets of the residue removing liquid discharge nozzle 7, the gas discharge nozzle 60, and the rinsing liquid discharge nozzle 65 face approximately the center of the upper surface Wa.

[0088] The residue removing liquid discharge nozzle 7 has a function of discharging the residue removing liquid downward. When the substrate W is held by the spin chuck 4, this function can be said to enable the residue removing liquid discharge nozzle 7 to supply the residue removing liquid to the upper surface Wa of the substrate W. As will be described in detail later, the residue removing liquid removes residue on the upper surface Wa after the retention layer has been peeled off.

[0089] The gas discharge nozzle 60 has a function of discharging gas downward. When the substrate W is held by the spin chuck 4, this function enables the gas discharge nozzle 60 to supply gas to the upper surface Wa of the substrate W. As will be described in detail later, the gas is used to solidify or harden the processing liquid, or to dry the upper surface Wa after the residue has been removed.

[0090] The rinse liquid discharge nozzle 65 has a function of discharging the rinse liquid downward. When the substrate W is held by the spin chuck 4, the rinse liquid discharge nozzle 65 can be said to have this function of supplying the rinse liquid to the upper surface Wa of the substrate W. As will be described in detail later, the rinse liquid is used to clean the upper surface Wa after the retention layer has been peeled off and before the residue on the upper surface Wa is removed.

[0091] A residue removing liquid supply pipe 22 is connected to the residue removing liquid discharge nozzle 7. A valve 23 is provided to the residue removing liquid supply pipe 22. The residue removing liquid is supplied to the residue removing liquid supply pipe 22 from the opposite side of the valve 23 to the residue removing liquid discharge nozzle 7 by a mechanism (not shown). The valve 23 adjusts the flow rate of the residue removing liquid flowing through the residue removing liquid discharge nozzle 7, and typically opens and closes the flow path of the residue removing liquid supply pipe 22. The valve 23 is provided in the chamber 2, for example.

[0092] A gas supply pipe 61 is connected to the gas discharge nozzle 60. A valve 62 is provided to the gas supply pipe 61. Gas is supplied to the gas supply pipe 61 from the opposite side of the valve 62 to the gas discharge nozzle 60 by a mechanism (not shown). The valve 62 adjusts the flow rate of the gas flowing through the gas discharge nozzle 60, and typically opens and closes the flow path of the gas supply pipe 61. The valve 62 is provided in the chamber 2, for example.

[0093] A rinsing liquid supply pipe 66 is connected to the rinsing liquid discharge nozzle 65. A valve 67 is provided to the rinsing liquid supply pipe 66. The rinsing liquid is supplied to the rinsing liquid supply pipe 66 from the opposite side of the valve 67 to the rinsing liquid discharge nozzle 65 by a mechanism (not shown). The valve 67 adjusts the flow rate of the rinsing liquid flowing through the rinsing liquid discharge nozzle 65, and typically opens and closes the flow path of the rinsing liquid supply pipe 66. The valve 67 is provided in the chamber 2, for example.

[0094] <3. Control system of substrate processing apparatus 1> 3 is a block diagram illustrating a main control system of the substrate processing apparatus 1. The control device 107 includes a processor 3A and a memory 3B. The memory 3B stores a control program. The control program is executed by the processor 3A to control the operation of the substrate processing apparatus 1. For example, the processor 3A and the memory 3B are realized by a microcomputer.

[0095] The processor 3A is composed of, for example, one or more central processing units (CPUs). The memory 3B is composed of, for example, a volatile storage medium such as a random access memory (RAM) and a non-volatile storage medium such as a hard disk drive (HDD) or a solid state drive (SSD). In the non-volatile storage medium, for example, in addition to the above-mentioned control program, various information can be stored. When the processor 3A executes the control program, the RAM is used, for example, as a workspace, and stores information that is temporarily generated or acquired. At least a part of the functions realized by the control device 107 may be realized by hardware such as a dedicated electronic circuit.

[0096] In the main control system of the substrate processing apparatus 1, the control device 107 controls the spin motor 11, the nozzle moving mechanisms 12 and 15, the opposing member lifting mechanism 52, the guard lifting mechanism 44, and the valves 14, 17, 23, 62, and 67. Such controls are represented by solid arrows in FIG.

[0097] The spin base 9 is driven to rotate by a spin motor 11. The processing solution discharge nozzle 5 is moved by a nozzle moving mechanism 12. The stripping solution discharge nozzle 6 is moved by a nozzle moving mechanism 15. The facing member 50 is raised and lowered by a facing member lifting mechanism 52. The guards 41, 42 are raised and lowered by a guard lifting mechanism 44. The mechanical connections between these are represented by dashed arrows in Figures 1 and 3.

[0098] The control device 107 may not be provided in the substrate processing apparatus 1 but may be provided outside the substrate processing apparatus 1. The processor 3A may be provided in the substrate processing apparatus 1, and the memory 3B may be provided outside the substrate processing apparatus 1. The memory 3B may be provided in the substrate processing apparatus 1, and the processor 3A may be provided outside the substrate processing apparatus 1. It is clear that the control system illustrated in FIG. 3 can be realized in these cases as well.

[0099] <4. Particle removal processing> Fig. 4 is a flow chart illustrating a process of cleaning the substrate W in the chamber 2. Specifically, Fig. 4 illustrates a process of removing particles (foreign matter) on the upper surface Wa, and the flow chart is entitled "Particle Removal Process." When the particle removal process is started, the substrate W to be cleaned is already held by the spin chuck 4.

[0100] 5 to 13 are cross-sectional views each showing a schematic example of the state inside the chamber 2 for each step executed in the flowchart.

[0101] The particle removal process is broadly divided into three steps S10, S20, and S30, which are performed in this order. Step S10 is a process for forming a retention layer on the upper surface Wa. Step S20 is a process for removing the retention layer together with the particles. Step S30 is a process for removing solutes adhering to the guard 42.

[0102] <4-1. Formation of retention layer> Step S10 includes steps S11, S12, and S13, which are performed in this order. Step S11 is a process of supplying a processing liquid to the upper surface Wa. Step S12 is a process commonly known as spin-off, in which a portion of the processing liquid is scattered outward from the upper surface Wa, leaving an appropriate amount of the processing liquid on the upper surface Wa. Step S13 is a process of forming a retention layer by solidifying or curing the processing liquid (denoted as "solidifying / curing" in FIG. 4).

[0103] 5 is a schematic diagram illustrating the state inside the chamber 2 when step S11 is performed. When step S11 is performed, both of the guards 41 and 42 are disposed at their respective upper positions U1 and U2 by the guard lifting mechanism 44 (both of the guards 41 and 42 are located at their respective upper positions U1 and U2). In FIGS. 5 to 13, the upper position U1 of the guard 41 is shown as the position of the upper end of the guard 41 in the vertical direction. In FIGS. 5 to 13, the upper position U2 of the guard 42 is shown as the position of the upper end of the guard 42 in the vertical direction.

[0104] 5 illustrates an embodiment in which the upper portions of both the guards 41 and 42 are bent toward the spin chuck 4, but such bending is not necessarily required. For example, when the guard 42 has a cylindrical shape that maintains its diameter in the vertical direction, it is not necessarily required that the upper position U2 is higher than the upper position U1.

[0105] When step S11 is performed at the upper end of the guard 41, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 10 rpm to several tens of rpm. When step S11 is performed, the opposing member 50 is placed at its upper position U5 by the opposing member lifting mechanism 52 (the opposing member 50 is located at the upper position U5). In Fig. 5 to Fig. 13, the upper position U5 of the opposing member 50 is shown as the position of the opposing surface 50a in the vertical direction.

[0106] After the opposing member 50 is placed at its upper position U5, the nozzle moving mechanism 12 places the processing liquid discharge nozzle 5 at its central position (the processing liquid discharge nozzle 5 is located at its central position). With the substrate W rotating at the above-mentioned speed, the valve 14 opens and the processing liquid 27 is discharged from the processing liquid discharge nozzle 5 and supplied onto the upper surface Wa. The processing liquid 27 supplied to the upper surface Wa spreads over substantially the entire surface of the upper surface Wa by centrifugal force.

[0107] After the processing liquid 27 is supplied to the upper surface Wa for a predetermined time, the valve 14 is closed and step S11 is completed. After step S11 is completed, step S12 is performed.

[0108] 6 illustrates a schematic example of the state inside the chamber 2 when step S12 is performed. Even when step S12 is performed, both of the guards 41 and 42 remain at their respective upper positions U1 and U2. When step S12 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 300 rpm to 1500 rpm. The rotation at this speed causes the processing liquid 27 to splash from the upper surface Wa. Even when step S12 is performed, the opposing member 50 remains at its upper position U5. When step S12 is performed, the nozzle moving mechanism 12 moves the processing liquid discharge nozzle 5 to its retracted position (the processing liquid discharge nozzle 5 is at its retracted position: not shown).

[0109] By adjusting the amount of processing liquid 27 supplied in step S11 and the speed and time at which the substrate W rotates in step S12, an appropriate amount of processing liquid 27 for forming a retention layer 29 is left on the upper surface Wa, while excess processing liquid 27 is splashed outward from the periphery of the upper surface Wa and removed.

[0110] When viewed from the position 8a of the upper end of the chuck pin 8 in the horizontal direction (which is also the direction perpendicular to the vertical rotation axis A1), the guard 41 located at the upper position U1 is between the position 8a and the guard 42. The processing liquid 27 splashed from the upper surface Wa is received by the guard 41, specifically, by the surface 41a of the guard 41 on the spin chuck 4 side, and adhesion of the processing liquid 27 to the guard 42 is suppressed. At this time, volatilization of a volatile component contained in the processing liquid 27, such as a solvent, may proceed.

[0111] In step S12, the substrate W is rotated and a predetermined time passes, and then step S12 is completed. After step S12 is completed, step S13 is executed.

[0112] FIG. 7 illustrates a schematic diagram of the state inside the chamber 2 when step S13 is performed. When step S13 is performed, both of the guards 41 and 42 remain in their upper positions U1 and U2, respectively. When step S13 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 100 rpm to 1000 rpm. When step S13 is performed, the opposing member 50 is in its lower position D5. In FIGS. 5 to 13, the lower position D5 of the opposing member 50 is shown as the vertical position of the opposing surface 50a.

[0113] In step S13, the valve 62 opens, and gas is discharged from the gas discharge nozzle 60 and supplied between the opposing surface 50a and the upper surface Wa. For example, nitrogen gas is used as the gas. In step S13, the volatilization of the volatile components, such as the solvent, progresses, and the processing liquid 27 solidifies or hardens. Due to this solidification or hardening, a solid retention layer 29 mainly composed of a solute is formed on the upper surface Wa. When the retention layer 29 is formed, particles (not shown) that were attached to the upper surface Wa are separated from the upper surface Wa and are retained in the retention layer 29.

[0114] Here, "solidification" refers to the solidification of a solute due to forces acting between molecules or atoms as a solvent evaporates, for example. "Hardening" refers to the solidification of a solute due to chemical changes such as polymerization or crosslinking, for example. Therefore, "solidification or hardening" refers to the "solidification" of a solute due to various factors. Note that the processing liquid 27 only needs to be solidified or hardened to an extent that it can hold particles, and the solvent does not need to be completely volatilized.

[0115] The solute and solvent contained in the processing liquid 27 may be various substances, taking into consideration the material of the substrate W. For example, in Patent Document 2, examples of the solute include acrylic resin, phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane, polyimide, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene, acrylonitrile butadiene styrene resin, acrylonitrile styrene resin, polyamide, polyacetal, polycarbonate, polyvinyl alcohol, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polysulfone, polyether ether ketone, and polyamide imide. From these examples, the solute in the present embodiment may be selected. The solute may be an organic compound other than a resin, or a mixture of an organic compound and another compound. Alternatively, the solute may be a compound other than an organic compound.

[0116] After a predetermined time has elapsed since the gas supply in step S13 (specifically, since the valve 62 is opened), the gas supply stops (specifically, the valve 62 is closed) and step S13 is completed. After step S13 is completed, step S20 is executed.

[0117] <4-2. Removal of retention layer 29> Step S20 includes steps S21, S22, S23, and S24, which are performed in this order. Step S21 is a step of peeling off the retention layer 29 using a stripping solution. Step S22 is a step of washing off the stripping solution and the peeled retention layer 29 from the upper surface Wa. Step S23 is a step of removing residue remaining on the upper surface Wa by step S22. Step S24 is a step of performing spin drying.

[0118] 8 is a schematic diagram illustrating the state inside the chamber 2 when step S21 is performed. When step S21 is performed, the guard lifting mechanism 44 moves the guard 41 to its lower position D1 while keeping the guard 42 in its upper position U2. The lower position D1 is lower than the upper position U1. In FIGS. 5 to 13, the lower position D1 of the guard 41 is shown as the position of the upper end of the guard 41 in the vertical direction.

[0119] When step S21 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 500 rpm to 800 rpm. When step S21 is performed, the opposing member lifting mechanism 52 places the opposing member 50 at its upper position U5 (the opposing member 50 is located at the upper position U5).

[0120] After the facing member 50 is positioned at its upper position U5, the nozzle moving mechanism 15 moves the remover liquid discharge nozzle 6 to its central position (the remover liquid discharge nozzle 6 is positioned at its central position). With the substrate W rotating at the above-mentioned speed, the valve 17 opens, and the remover liquid 32 is discharged from the remover liquid discharge nozzle 6 and supplied to the retention layer 29. The remover liquid 32 supplied to the retention layer 29 spreads over almost the entire upper surface of the retention layer 29 due to the action of centrifugal force. The retention layer 29 is peeled off from the upper surface Wa by the removal liquid 32 supplied thereto. The rotation at the above-mentioned speed (for example, 500 rpm to 800 rpm) causes the remover liquid 32 to splash from the upper surface Wa. The peeled retention layer 29 is splashed outward from the periphery of the upper surface Wa together with the remover liquid 32.

[0121] When viewed horizontally from position 8a of the upper end of the chuck pin 8, the guard 41 located at the lower position D1 is not between position 8a and the guard 42. The retention layer 29 and the stripping liquid 32 scattered from the upper surface Wa pass over the guard 41 and are received by the guard 42. The solute contained in the retention layer 29, more specifically, the processing liquid 27, is prevented from adhering to the surface 41a of the guard 41.

[0122] The remover liquid 32 is compatible with the solvent, and the solute is poorly soluble or insoluble in the remover liquid 32. The remover liquid 32 penetrates into the retention layer 29 by interaction with the solvent remaining in the retention layer 29, and reaches the upper surface Wa. The remover liquid 32 does not easily dissolve the solute, which is the main component of the retention layer 29. The particles taken into the retention layer 29 are peeled off from the upper surface Wa together with the retention layer 29, and are removed from the upper surface Wa.

[0123] Considering the solute and the solvent, various substances can be used for the stripping solution 32. For example, Patent Document 2 introduces many examples of the stripping solution 32, including an example in which PGEE (propylene glycol monoethyl ether) is used as the solvent and SC1 (a mixed acid containing ammonium hydroxide and hydrogen peroxide) is used as the stripping solution 32 in the present embodiment.

[0124] After a predetermined time has elapsed since the supply of stripping liquid 32 was started in step S21 (specifically, since valve 17 was opened), the supply of stripping liquid 32 is stopped (specifically, valve 17 is closed), and step S21 is completed. After step S21 is completed, step S22 is executed.

[0125] FIG. 9 illustrates a schematic example of the state inside the chamber 2 when step S22 is performed. When step S22 is performed, the guard 42 remains at its upper position U2, and the guard 41 remains at its lower position D1. When step S22 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 100 rpm to 1000 rpm. When step S22 is performed, the nozzle moving mechanism 15 places the stripping solution discharge nozzle 6 at its retracted position (the stripping solution discharge nozzle 6 is at the retracted position: not shown). After the stripping solution discharge nozzle 6 is at its retracted position, the opposing member 50 is lowered by the opposing member lifting mechanism 52 to be at the middle position M5. The middle position M5 of the opposing member 50 is a position lower than the upper position U5 of the opposing member 50 and higher than the lower position D5 of the opposing member 50. In FIGS. 5 to 13, the middle position M5 is shown as a position in the vertical direction of the opposing surface 50a.

[0126] In step S22, after the stripping liquid discharge nozzle 6 is positioned at its retracted position, the valve 67 opens while the substrate W is rotating at the above-mentioned speed, and the rinsing liquid 31 is discharged from the rinsing liquid discharge nozzle 65 and supplied to the upper surface Wa.

[0127] The discharge of the rinsing liquid 31 from the rinsing liquid discharge nozzle 65 is started, for example, when the opposing member 50 is in the middle position M5. Alternatively, the discharge may be started when the opposing member 50 is in its upper position U5, or may be started while the opposing member 50 is moving from its upper position U5 to the middle position M5.

[0128] The rinsing liquid 31 supplied to the upper surface Wa spreads over almost the entire surface of the upper surface Wa due to the action of centrifugal force, and further splashes outward from the periphery of the upper surface Wa. The rinsing liquid 31 washes away the stripping liquid 32 remaining on the upper surface Wa, and further the retention layer 29 remaining on the upper surface Wa after being stripped, from the upper surface Wa. The splashed rinsing liquid 31, stripping liquid 32, and further the retention layer 29 are received by the guard 42. The solute contained in the retention layer 29, more specifically the processing liquid 27, is prevented from adhering to the surface 41a of the guard 41.

[0129] Examples of the rinse liquid 31 include DIW, carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm).

[0130] After a predetermined time has elapsed since the supply of the rinsing liquid 31 was started in step S22 (specifically, since the valve 67 was opened), the supply of the rinsing liquid 31 is stopped (specifically, the valve 67 is closed), and step S21 is completed. After step S21 is completed, step S23 is executed.

[0131] 10 illustrates a schematic diagram of the state inside the chamber 2 when step S23 is performed. When step S23 is performed, the guard 42 remains in its upper position U2, and the guard 41 remains in its lower position D1. When step S23 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, several tens of rpm to 300 rpm. When step S23 is performed, the opposing member 50 remains in the middle position M5.

[0132] In step S23, while the substrate W is rotating at the above-mentioned speed, the valve 23 is opened, and the residue removing liquid 33 is discharged from the residue removing liquid discharge nozzle 7 and supplied to the upper surface Wa. The residue removing liquid 33 supplied to the upper surface Wa spreads over substantially the entire surface of the upper surface Wa by centrifugal force. The rinsing liquid 31 remaining on the upper surface Wa is replaced with the residue removing liquid 33. The residue removing liquid 33 dissolves the residue of the retention layer 29 remaining on the upper surface Wa. The stripping liquid 32 is scattered outward from the periphery of the upper surface Wa by the rotation at the above-mentioned speed (for example, 500 rpm to 800 rpm). The scattered residue removing liquid 33 and residue are received by the guard 42. The solute contained in the retention layer 29, more specifically, the processing liquid 27, is prevented from adhering to the surface 41a of the guard 41.

[0133] A solvent having the ability to dissolve the solute is used for the residue removal liquid 33. For example, Patent Document 2 lists thinner, toluene, acetate esters, alcohols, and glycols as examples of solvents that correspond to the residue removal liquid 33 of the present embodiment. From these examples, the residue removal liquid 33 of the present embodiment can be selected. For example, IPA (isopropyl alcohol) is used for the residue removal liquid 33. For example, PGME (propylene glycol methyl ether acetate) is used for the residue removal liquid 33.

[0134] The use of IPA as the residue removal liquid 33 is advantageous not only in terms of solubility but also in terms of volatility, which makes it easy to replace the rinsing liquid 31 when DIW is used as the rinsing liquid 31 and facilitates the spin drying in the subsequent step S24.

[0135] After a predetermined time has elapsed since the supply of the residue removing liquid 33 was started in step S23 (specifically, since the valve 23 was opened), the supply of the residue removing liquid 33 is stopped (specifically, the valve 23 is closed), and step S23 is completed. After the completion of step S23, step S24 is executed.

[0136] 11 illustrates a schematic diagram of the state inside the chamber 2 when step S24 is performed. Even when step S24 is performed, the guard 42 remains in its upper position U2, and the guard 41 remains in its lower position D1. When step S24 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 500 rpm to 1500 rpm. When step S24 is performed, the opposing member lifting mechanism 52 places the opposing member 50 in its lower position D5 (the opposing member 50 is in the lower position D5).

[0137] In step S24, the valve 62 is opened, and gas is discharged from the gas discharge nozzle 60 and supplied between the facing surface 50a and the upper surface Wa. As the substrate W rotates, centrifugal force acts on the residue removing liquid 33, and the residue removing liquid 33 is discharged from the periphery of the upper surface Wa of the substrate W. The supply of gas promotes the volatilization of the residue removing liquid 33. In step S24, spin drying is performed to dry the residue removing liquid 33.

[0138] There is no importance in whether the start of gas discharge and the change in the speed at which the substrate W rotates due to the transition from step S23 to step S24 occur before or after the start of gas discharge. For example, the start of the gas discharge and the change in the speed are executed simultaneously.

[0139] After a predetermined time has elapsed since the spin drying is performed in step S24 (specifically, since the valve 62 is opened or since the rotation speed of the substrate W is changed), the supply of gas is stopped (specifically, the valve 62 is closed) and step S24 is completed. After step S24 is completed, step S30 is executed.

[0140] In step S10, the guards 41 and are located at their upper positions U1 and U2, respectively. The treatment liquid 27 splashed from the upper surface Wa is received by the guard 41, and solutes contained in the treatment liquid 27 hardly adhere to the guard .

[0141] In step S20, the guard 41 is located at its lower position D1, and the guard 42 is located at its upper position U2. The stripping liquid 32, rinsing liquid 31, and residue removal liquid 33 splashed from the upper surface Wa are received by the guard 42, and solutes contained in the processing liquid 27 hardly adhere to the guard 41. Most of the substances adhering to the surface 41a of the guard 41 are solutes, and contamination of the guard 41 with the stripping liquid 32, rinsing liquid 31, and residue removal liquid 33 is suppressed.

[0142] In step S20, it is desirable for the guard 41 to be in the lower position D1 in order to prevent the stripping liquid 32 and the rinsing liquid 31 from adhering to the guard 41.

[0143] Even if there is adhesion on the guards 41, 42 due to the already performed steps S10, S20 and step S10 is subsequently performed for another substrate W, the guard 41 suppresses contamination of the upper surface Wa caused by the adhesion on the guard 42. Suppressing the contamination of the upper surface Wa in step S10 suppresses contamination of the processing liquid 27, and thus suppresses a reduction in the ability of the retention layer 29 to capture foreign matter.

[0144] However, the deposit on guard 41 in the preceding step S10 may become peeled solute that adheres to upper surface Wa. From the viewpoint of removing the peeled solute on upper surface Wa, it is desirable to perform step S30.

[0145] <4-3. Cleaning Guard 41> Step S30 includes steps S31 and S32, which are executed in this order. Step S31 is a step of discharging the residue removing liquid 33 onto the upper surface Wa, and scattering the residue removing liquid 33 from the upper surface Wa to supply the residue removing liquid 33 to the guard 41. Step S32 is a step of performing spin drying to dry the residue removing liquid 33. The spin drying cleans the upper surface Wa, for example, suppressing so-called watermarks.

[0146] 12 is a schematic diagram illustrating the state inside the chamber 2 when step S31 is performed. When step S31 is performed, the guard 41 is positioned at its upper position U1 while the guard 42 is positioned at its upper position U2 by the guard lifting mechanism 44. As will be explained in a modification to be described later, in step S31 the guard 41 may be positioned below its upper position U1.

[0147] When step S31 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 100 rpm to 1000 rpm. This speed can be changed in step S31, as explained in a modification described later.

[0148] When step S31 is performed, the opposing member 50 is placed at the middle position M5 by the opposing member lifting mechanism 52 (the opposing member 50 is located at the middle position M5).

[0149] In step S31, while the substrate W is rotating at the above-mentioned speed, the valve 23 is opened and the residue removing liquid 33 is discharged from the residue removing liquid discharge nozzle 7 and supplied onto the upper surface Wa. The residue removing liquid 33 supplied onto the upper surface Wa spreads over almost the entire surface of the upper surface Wa due to the centrifugal force caused by the rotation at the above-mentioned speed, and further splashes outward from the periphery of the upper surface Wa. The splashed residue removing liquid 33 is received by the guard 41. The residue removing liquid 33 received by the guard 41 washes away the surface 41a of the guard 41.

[0150] In step S31, the residue removing liquid 33 can be regarded as a cleaning liquid that splashes from the upper surface Wa to the surface 41a to clean the surface 41a and remove solutes adhering to the surface 41a. The cleaning liquid has a component that removes the solutes adhering to the surface 41a from the surface 41a, for example, a component that dissolves the solutes. From this point of view, it can be said that the residue removing liquid 33 is used as the cleaning liquid. Also, the residue removing liquid discharge nozzle 7 can be regarded as a cleaning liquid discharge nozzle that discharges the cleaning liquid, and it can be said that the cleaning liquid discharge nozzle also serves as the residue removing liquid discharge nozzle 7.

[0151] In step S31, after the supply of the residue removing liquid 33 (specifically, after the valve 23 is opened), a predetermined time has elapsed, the supply of the residue removing liquid 33 is stopped (specifically, the valve 23 is closed), and step S31 is completed. After the completion of step S31, step S32 is executed.

[0152] 13 illustrates a schematic diagram of the state inside the chamber 2 when step S32 is performed. Even when step S32 is performed, the guards 41 and 42 remain at their respective upper positions U1 and U2. When step S32 is performed, the spin motor 11 rotates the spin base 9, and thus the substrate W. The rotation speed is, for example, 500 rpm to 1500 rpm. When step S32 is performed, the opposing member lifting mechanism 52 places the opposing member 50 at its lower position D5 (the opposing member 50 is at the lower position D5).

[0153] In step S32, the valve 62 is opened, and gas is discharged from the gas discharge nozzle 60 and supplied between the facing surface 50a and the upper surface Wa. As the substrate W rotates, centrifugal force acts on the residue removing liquid 33, and the residue removing liquid 33 is discharged from the periphery of the upper surface Wa of the substrate W. The supply of gas promotes the volatilization of the residue removing liquid 33. In step S32, spin drying is performed to dry the residue removing liquid 33.

[0154] There is no importance in whether the start of gas discharge and the change in the speed at which the substrate W rotates due to the transition from step S31 to step S32 are performed in order. For example, the start of the gas discharge and the change in the speed are performed simultaneously.

[0155] After a predetermined time has elapsed since spin drying is performed in step S32 (specifically, since valve 62 is opened or since the rotation speed of substrate W is changed), the supply of gas is stopped (specifically, valve 62 is closed), and step S32 is completed.

[0156] Upon completion of step S32, step S30 is completed and the particle removal process is terminated. After that, preparations are made for removing the substrate W from the spin chuck 4. Specifically, the opposing member lifting mechanism 52 positions the opposing member 50 at its upper position U5 (the opposing member 50 is at the upper position U5), the guard lifting mechanism 44 positions the guard 41 at its lower position D1 (the guard 41 is at the lower position D1), and the guard 42 is positioned at its lower position (not shown) (the guard 42 is at its lower position), and the substrate W is released from the grip of the chuck pins 8.

[0157] Step S30 cleans the guard 41 to reduce the possibility that peeled solutes are present on the upper surface Wa. Specifically, this reduces the occurrence of a solute contained in the processing liquid 27 for forming the retention layer 29 reaching the substrate W separately from the processing liquid 27 supplied to the substrate W. The reduction in such an occurrence reduces the deterioration of the ability of the retention layer 29 formed later to remove particles from the substrate W.

[0158] <4-4. Execution order of steps S10, S20 and S30> Assume that a particle removal process is performed on each of different substrates W. The occurrence of a phenomenon in which a solute adhered to the guard 41 by performing step S10 on a first substrate W becomes a peeled solute and reaches the upper surface Wa in step S10 subsequently performed on a second substrate W is reduced, thereby reducing deterioration in the performance of the retention layer 29 formed on the second substrate W.

[0159] In view of this, after step S10 is performed on the first substrate W, step S30 may be performed on either the first substrate W or the second substrate W before step S10 is performed on the second substrate W.

[0160] In the above-described embodiment, steps S10, S20, and S30 are performed in this order on the first substrate W, and then step S10 is performed on the second substrate W. In this case, step S30 performed on the first substrate W contributes to reducing deterioration in the performance of the retention layer 29 formed on the second substrate W.

[0161] For example, the particle removal process may first be performed in step S30, and then in steps S10 and S20. In this case, steps S10 and S20 are performed on the first substrate W, and then steps S30 and S10 are performed on the second substrate W, in this order. In this case, step S30 performed on the second substrate W contributes to reducing deterioration in the performance of the retention layer 29 formed on the second substrate W.

[0162] <4-5. Overall viewpoint of the embodiment> <4-5-1. Viewpoint of substrate processing method> The techniques disclosed in the above-described embodiments can be generally described as follows from the viewpoint of a substrate processing method exemplified by a particle removal process. The substrate processing method is a method in which a retention layer 29 that captures foreign matter on an upper surface Wa of a substrate W is formed on the upper surface Wa, and a process for removing the foreign matter together with the retention layer 29 is performed. The substrate processing method is performed in a substrate processing apparatus 1. The substrate processing apparatus 1 includes a spin chuck 4 and a guard 41. The spin chuck 4 rotates the substrate W about a vertical rotation axis A1. The guard 41 surrounds the spin chuck 4 when viewed along the rotation axis A1. The guard 41 has a surface 41a on the spin chuck 4 side.

[0163] The substrate processing method includes steps S10, S20, and S30. Step S10 includes steps S11, S12, and S13. Step S11 is a step of supplying a processing liquid 27 to an upper surface Wa of the substrate W. The processing liquid 27 contains a solute and a solvent, and forms a retention layer 29 by solidification or hardening. Step S12 is a step of rotating the substrate W to scatter a part of the processing liquid 27 supplied to the upper surface Wa outward from the upper surface Wa. Step S13 is a step of forming a retention layer 29 on the upper surface Wa by solidification or hardening of the processing liquid 27 remaining on the upper surface Wa. Step S20 is a step of removing the retention layer 29 on the upper surface Wa.

[0164] Step S30 includes steps S31 and S32. Step S31 is a step of supplying a cleaning liquid for cleaning the surface 41a to the upper surface Wa. Step S32 is a step of rotating the substrate W to splash the cleaning liquid from the upper surface Wa to the surface 41a.

[0165] The substrate W to be processed in steps S10 and S20 may be the same as or different from the substrate W to be processed in step S30. For example, when the above-described substrate processing method is repeatedly performed, the substrate W already processed in step S30 in the preceding substrate processing method may be different from the substrate W to be processed in steps S10 and S20 in the following substrate processing method.

[0166] Although the example has been given in which the residue removing liquid 33 is used as the cleaning liquid, the residue removing liquid 33 does not necessarily have to be used as the same cleaning liquid. For example, IPA may be used as the residue removing liquid 33, and PGME may be used as the cleaning liquid. The cleaning liquid having a component that dissolves solutes is useful for cleaning the surface 41a.

[0167] This substrate processing method reduces the occurrence of a phenomenon in which solutes contained in the processing liquid 27 for forming the retention layer 29 reach the substrate W separately from the processing liquid 27 supplied to the substrate W.

[0168] The substrate processing apparatus 1 may further include a guard 42. The guard 42 surrounds the guard 41 when viewed along the rotation axis A1. The guard 41 can be located at either an upper position U1 or a lower position D1. The lower position D1 is lower than the upper position U1.

[0169] When the guard 41 is located at the upper position U1, the guard 41 is located between the holding position where the spin chuck 4 holds the substrate W, for example, from the position 8a of the upper end of the chuck pin 8, as viewed in a direction perpendicular to the rotation axis A1, for example, from the horizontal direction, and the holding position. When the guard 41 is located at the lower position D1, the guard 41 is not located between the holding position and the guard 42 as viewed in the above-mentioned direction.

[0170] When step S10 is performed, the guard 41 is in the upper position U1, when step S20 is performed, the guard 41 is in the lower position D1, and when step S30 is performed, the guard 41 is in the upper position U1.

[0171] By disposing the guard 41 in this manner, contamination of the upper surface Wa resulting from matter adhering to the guard 42 is suppressed in step S10, and a reduction in the ability of the retention layer 29 to capture foreign matter is suppressed.

[0172] Step S20 may include steps S21 and S23. Step S21 is a step of peeling off retention layer 29 on upper surface Wa using a peeling liquid 32. Step S22 is a step of removing residues on upper surface Wa after retention layer 29 has been peeled off using a residue removing liquid 33. For example, the residue removing liquid 33 is used as the above-mentioned cleaning liquid.

[0173] By using the nozzle for discharging the cleaning liquid in this manner, it is not necessary to provide a nozzle for discharging the cleaning liquid separately from the residue removing liquid discharging nozzle 7, and the cost of manufacturing the substrate processing apparatus 1 is reduced.

[0174] In step S32, when or after the substrate W is rotated to splash the cleaning liquid from the upper surface Wa onto the surface 41a, the cleaning liquid on the upper surface Wa may be dried. This drying corresponds to the process of drying the residue removal liquid 33 by spin drying, which was described with reference to Fig. 13. Drying the cleaning liquid by spin drying contributes to cleaning the upper surface Wa.

[0175] Regardless of whether step S30 is performed or not, the guard 41 is located at the upper position U1 when step S10 is performed, and the guard 41 is located at the lower position D1 when step S20 is performed, which suppresses contamination of the upper surface Wa caused by attachments to the guard 42 in step S10 and suppresses a reduction in the ability of the retaining layer 29 to absorb foreign matter.

[0176] From this viewpoint, the following substrate processing method, which does not assume the existence of step S30, can also be envisioned. In the substrate processing method, a retaining layer 29 that captures foreign matter on the upper surface Wa of the substrate W is formed on the upper surface Wa, and a process for removing the foreign matter together with the retaining layer 29 is performed. The substrate processing method is performed in a substrate processing apparatus 1. The substrate processing apparatus 1 includes a spin chuck 4 and guards 41 and 42. The spin chuck 4 rotates the substrate W about a vertical rotation axis A1. The guard 41 surrounds the spin chuck 4 when viewed along the rotation axis A1. The guard 41 has a surface 41a on the spin chuck 4 side. The guard 42 surrounds the guard 41 when viewed along the rotation axis A1. The guard 41 can be located at either an upper position U1 or a lower position D1. The lower position D1 is lower than the upper position U1.

[0177] The substrate processing method includes steps S10 and S20. Step S10 includes steps S11, S12, and S13. Step S11 is a step of supplying a processing liquid 27 to an upper surface Wa of the substrate W. The processing liquid 27 contains a solute and a solvent, and forms a retention layer 29 by solidification or hardening. Step S12 is a step of rotating the substrate W to scatter a portion of the processing liquid 27 supplied to the upper surface Wa outward from the upper surface Wa. Step S13 is a step of forming a retention layer 29 on the upper surface Wa by solidification or hardening of the processing liquid 27 remaining on the upper surface Wa. Step S20 is a step of removing the retention layer 29 on the upper surface Wa.

[0178] When the guard 41 is located at the upper position U1, the guard 41 is present between the holding position where the spin chuck 4 holds the substrate W, for example, from the position 8a of the upper end of the chuck pin 8, as viewed in a direction perpendicular to the rotation axis A1, for example, from the horizontal direction. When the guard 41 is located at the lower position D1, the guard 41 is not present between the holding position and the guard 42 as viewed in the above-mentioned direction. When step S10 is performed, the guard 41 is located at the upper position U1, and when step S20 is performed, the guard 41 is located at the lower position D1.

[0179] <4-5-2. Viewpoint of the substrate processing apparatus 1> The techniques disclosed in the above-described embodiments can be generally described as follows from the viewpoint of a substrate processing apparatus 1 that performs a substrate processing method exemplified by a particle removal process. The substrate processing apparatus 1 includes a spin chuck 4, guards 41 and 42, a processing liquid discharge nozzle 5, a stripping liquid discharge nozzle 6, a cleaning liquid discharge nozzle exemplified by a residue removal liquid discharge nozzle 7, and a guard lifting mechanism 44.

[0180] The spin chuck 4 rotates the substrate W having an upper surface Wa about a vertical rotation axis A1. The guard 41 surrounds the spin chuck 4 when viewed along the rotation axis A1, and has a surface 41a on the spin chuck 4 side. The guard 42 surrounds the guard 41 when viewed along the rotation axis A1.

[0181] The processing liquid discharge nozzle 5 is disposed above the spin chuck 4. The processing liquid discharge nozzle 5 discharges the processing liquid 27 downward. It can also be said that the processing liquid 27 is discharged downward from the processing liquid discharge nozzle 5.

[0182] The remover liquid discharge nozzle 6 is disposed above the spin chuck 4. The remover liquid discharge nozzle 6 discharges the remover liquid 32 downward. It can also be said that the remover liquid 32 is discharged downward from the remover liquid discharge nozzle 6.

[0183] The cleaning liquid discharge nozzle is disposed above the spin chuck 4. The cleaning liquid discharge nozzle discharges the cleaning liquid downward. It can also be said that the cleaning liquid is discharged downward from the cleaning liquid discharge nozzle.

[0184] The remover 32 removes the retention layer 29 formed on the upper surface Wa. The retention layer 29 is formed on the upper surface Wa by solidifying or curing the processing liquid 27 on the upper surface Wa, and captures foreign matter on the upper surface Wa. The processing liquid 27 contains a solute and a solvent. The cleaning liquid has a component that removes solutes attached to the surface 41a of the guard 41 facing the spin chuck 4. The cleaning liquid having a component that dissolves solutes is useful for cleaning the surface 41a.

[0185] The guard lifting mechanism 44 lifts and lowers the guard 41. When the processing liquid discharge nozzle 5 discharges and supplies the processing liquid 27 to the upper surface Wa and the spin chuck 4 rotates the substrate W at a speed at which the processing liquid 27 scatters from the upper surface Wa (300 rpm to 1500 rpm in the above example), the guard lifting mechanism 44 places the guard 41 at the upper position U1.

[0186] When the stripping liquid discharge nozzle 6 discharges and supplies the stripping liquid 32 to the upper surface Wa and the spin chuck 4 rotates the substrate W at a speed at which the stripping liquid 32 scatters from the upper surface Wa (500 rpm to 800 rpm in the above example), the guard lifting mechanism 44 places the guard 41 at the lower position D1. The lower position D1 is lower than the upper position U1.

[0187] When the cleaning liquid discharge nozzle discharges and supplies the cleaning liquid to the upper surface Wa and the spin chuck 4 rotates the substrate W at a speed at which the cleaning liquid splashes from the upper surface Wa (100 rpm to 1000 rpm in the above example), the guard lifting mechanism 44 positions the guard 41 at the upper position U1.

[0188] When the guard 41 is located at the upper position U1, the guard 41 is located between the holding position where the spin chuck 4 holds the substrate W, for example, from the position 8a of the upper end of the chuck pin 8, as viewed in a direction perpendicular to the rotation axis A1, for example, from the horizontal direction, and the holding position. When the guard 41 is located at the lower position D1, the guard 41 is not located between the holding position and the guard 42 as viewed in the above-mentioned direction.

[0189] For example, the substrate processing apparatus 1 includes a control device 107. The control device 107 controls the rotation of the substrate W by the spin chuck 4, the arrangement of the guards 41, 42 by the guard lifting mechanism 44, the discharge of the processing liquid 27 from the processing liquid discharge nozzle 5, the discharge of the stripping liquid 32 from the stripping liquid discharge nozzle 6, and the discharge of the cleaning liquid from the cleaning liquid discharge nozzle. The control device 107 contributes to cooperation between the rotation of the substrate W, the arrangement of the guards 41, 42, the discharge of the processing liquid 27, the discharge of the stripping liquid 32, and the discharge of the cleaning liquid.

[0190] The substrate W having the upper surface Wa to which the processing liquid 27 and the stripping liquid 32 are supplied may be the same as or different from the substrate W having the upper surface Wa to which the cleaning liquid is supplied. For example, when the supply of the processing liquid 27 and the stripping liquid 32 and the supply of the cleaning liquid are repeatedly performed, the substrate W having the upper surface Wa to which the cleaning liquid has already been supplied may be different from the substrate W having the upper surface Wa to which the processing liquid 27 and the stripping liquid 32 are subsequently supplied.

[0191] The substrate processing apparatus 1 reduces the occurrence of a phenomenon in which a solute contained in the processing liquid 27 for forming the retention layer 29 reaches the substrate W separately from the processing liquid 27 supplied to the substrate W.

[0192] The substrate processing apparatus 1 may include a residue removing liquid discharge nozzle 7. The residue removing liquid discharge nozzle 7 discharges a residue removing liquid 33. The residue removing liquid 33 is discharged from the residue removing liquid discharge nozzle 7 onto the upper surface Wa. The residue removing liquid 33 removes residues on the upper surface Wa after the retention layer 29 formed on the upper surface Wa is peeled off.

[0193] Although the example has been given in which the residue removing liquid 33 is used as the cleaning liquid, the residue removing liquid 33 does not necessarily have to be used as the same cleaning liquid. For example, IPA may be used as the residue removing liquid 33, and PGME may be used as the cleaning liquid.

[0194] When the residue removing liquid 33 is not used as a cleaning liquid, a residue removing liquid discharge nozzle 7 may be provided in addition to the cleaning liquid discharge nozzle in the substrate processing apparatus 1. Using the residue removing liquid 33 as the cleaning liquid and using the residue removing liquid discharge nozzle 7 as a cleaning liquid discharge nozzle reduces the cost of manufacturing the substrate processing apparatus 1.

[0195] <5. Transformation> <5-1. Nozzle Deformation> In the above embodiment, the processing liquid discharge nozzle 5 may have a plurality of nozzle holes, and the processing liquid 27 may be discharged from the plurality of nozzle holes. The nozzle holes may be arranged, for example, in a line.

[0196] In the above embodiment, the stripping liquid discharge nozzle 6 may have a plurality of nozzle holes, and the stripping liquid 32 may be discharged from the plurality of nozzle holes. The nozzle holes may be arranged, for example, in a line.

[0197] In the above embodiment, the residue removing liquid discharge nozzle 7 may have a plurality of nozzle holes, and the residue removing liquid 33 may be discharged from the plurality of nozzle holes. The nozzle holes may be arranged, for example, in a line.

[0198] In the above embodiment, the rinsing liquid discharge nozzle 65 may have a plurality of nozzle holes, and the rinsing liquid 31 may be discharged from the plurality of nozzle holes. The nozzle holes may be arranged, for example, in a line.

[0199] <Position of the guard 41> In step S31, the following modifications are possible. When the residue removal liquid 33 scatters from the upper surface Wa, the guard 41 may be disposed at any intermediate position between its upper position U1 and its lower position D1 (even if the guard 41 is located at the intermediate position), or may be moving between the intermediate position and the upper position U1, or may be moving between the upper position U1 and the lower position D1. These modifications are desirable from the viewpoint of expanding the range for washing away the adhering substances on the guard 41.

[0200] <5-3. Rotation speed of the substrate W> In step S31, the following modifications are possible. When the residue removal liquid 33 scatters from the upper surface Wa, the rotation speed of the substrate W may be changed by the spin motor 11. The lower the speed, the easier it is for the residue removal liquid 33 scattered from the upper surface Wa to reach below the guard 41. The technique of varying the position where the scattered liquid reaches by such speed variation is exemplified in, for example, Patent Document 3.

[0201] As described above in "5-2. Position of the guard 41", when the position of the guard 41 varies, the upper limit and the lower limit of the rotation speed of the substrate W may be made different for each position of the guard 41. For example, when the guard 41 is located at its upper position U1, the substrate W rotates at a speed of v1 or more and v2 or less, and when the guard 41 is located at its intermediate position, the substrate W rotates at a speed of v3 or more and v4 or less, and the relationship of v3 < v1 < v4 < v2 may hold.

[0202] <5-4. Rotation of the opposing member 50> The substrate processing apparatus 1 may be provided with a function for the opposing member 50 to rotate about the rotation axis A1. For example, the opposing member 50 may rotate about the rotation axis A1 at a speed approximately the same as, for example, equal to, the rotation speed of the substrate W. By the opposing member 50 rotating in this way, the turbulent flow between the opposing surface 50a and the upper surface Wa is reduced, and for each of the processing liquid 27, the stripping liquid 32, the residue removal liquid 33, and the rinse liquid 31, it becomes easier for each to be uniformly distributed on the upper surface Wa.

[0203] <5-5. Addition of cleaning solution discharge nozzle> The cleaning liquid for cleaning the surface 41a may be different from the residue removing liquid 33. For example, PGME may be used as the residue removing liquid 33, and IPA may be used as the cleaning liquid. When the cleaning liquid and the residue removing liquid 33 are different, the chamber 2 may be provided with a cleaning liquid discharge nozzle that discharges the cleaning liquid, separate from the residue removing liquid discharge nozzle 7. Even when the same liquid is used for the cleaning liquid and the residue removing liquid 33, the chamber 2 may be provided with a cleaning liquid discharge nozzle that discharges the cleaning liquid, separate from the residue removing liquid discharge nozzle 7.

[0204] It goes without saying that all or part of the components constituting each of the above-described embodiments and various modified examples can be appropriately combined to the extent that no contradictions occur. [Explanation of symbols]

[0205] 1. Substrate Processing Equipment 4. Spin chuck (rotation device) 5 Processing liquid discharge nozzle 6 Stripping solution discharge nozzle 7 Residue removal liquid discharge nozzle (cleaning liquid discharge nozzle) 8a position (holding position) 27 Processing fluid 29 Retention layer 32 Stripping solution 33 Residue removal solution 41,42 Guard 41a side 44 Guard lifting mechanism 107 Control device A1 Rotation axis D1 lower position S10, S11, S12, S13, S20, S21, S22, S23, S30, S31, S32 Steps (Processes) U1 upper position W substrate Wa Top

Claims

1. a rotation device that rotates a substrate having an upper surface about a vertical axis of rotation; a first guard surrounding the rotating device when viewed along the rotation axis and having a surface facing the rotating device; In a substrate processing apparatus comprising: A method for forming a retention layer on the upper surface of the substrate to capture foreign matter on the upper surface, and performing a process to remove the foreign matter together with the retention layer, comprising the steps of: supplying a treatment liquid, the treatment liquid including a solute and a solvent, which solidifies or hardens to form the retention layer, to a first top surface, the top surface being the top surface of a first substrate; a step of rotating the first substrate to cause a portion of the processing liquid supplied to the first upper surface to be scattered outward from the first upper surface; forming the retention layer on the first upper surface by the solidification or hardening of the treatment liquid remaining on the first upper surface; A first step having a second step of removing the retention layer on the first top surface; supplying a cleaning liquid to a second top surface, the top surface of a second substrate, for cleaning the surface; rotating the second substrate to splash the cleaning liquid from the top surface of the second substrate onto the surface; and a third step having A substrate processing method comprising:

2. The substrate processing apparatus a second guard surrounding the first guard when viewed along the axis of rotation; Further comprising: The first guard can be disposed in either an upper position or a lower position lower than the upper position, when the first guard is disposed at the upper position, the first guard is located between the holding position and the second guard when viewed from the holding position where the rotation device holds the substrate along a direction perpendicular to the rotation axis, When the first guard is disposed at the lower position, the first guard is not between the holding position and the second guard as viewed along the direction, 2. The substrate processing method of claim 1, wherein the first guard is positioned at the upper position when the first process is performed, the first guard is positioned at the lower position when the second process is performed, and the first guard is positioned at the upper position when the third process is performed.

3. the third step is performed after the first step and the second step; 3. The substrate processing method according to claim 1, wherein the second substrate is the first substrate.

4. the third step is performed before the first step and the second step; The method of claim 1 or 2, wherein the second substrate and the first substrate are different.

5. The second step includes: removing the retention layer from the first upper surface using a remover; removing residue on the first upper surface after the retention layer is peeled off using a residue removing liquid; having The substrate processing method according to claim 1 , wherein the residue removing liquid is used as the cleaning liquid.

6. 2. The substrate processing method of claim 1, wherein in the third step, the cleaning liquid on the second upper surface is dried while rotating the second substrate to splash the cleaning liquid from the second upper surface onto the surface or after the second substrate is splashed.

7. a rotation device that rotates a substrate having an upper surface about a vertical axis of rotation; a first guard surrounding the rotating device when viewed along the rotation axis and having a surface facing the rotating device; a second guard surrounding the first guard as viewed along the axis of rotation; a processing liquid discharge nozzle disposed above the rotating device and configured to discharge a processing liquid downward; a stripping solution discharge nozzle disposed above the rotating device and configured to discharge a stripping solution downward; a cleaning liquid discharge nozzle disposed above the rotating device and configured to discharge a cleaning liquid downward; Equipped with The remover removes a retention layer formed on a first upper surface, which is the upper surface of a first substrate; the retention layer is formed on the first upper surface by solidifying or curing the treatment liquid on the first upper surface, and captures foreign matter on the first upper surface; the processing liquid includes a solute and a solvent; when the processing liquid discharge nozzle discharges the processing liquid and supplies it to the first upper surface, and the rotation device rotates the first substrate at a speed at which the processing liquid is scattered from the first upper surface, the first guard is located at an upper position; when the remover discharge nozzle discharges the remover liquid to supply it to the first upper surface and the rotation device rotates the first substrate at a speed at which the remover liquid scatters from the first upper surface, the first guard is located at a lower position lower than the upper position, when the cleaning liquid discharge nozzle discharges the cleaning liquid to supply it to a second upper surface, which is the upper surface of the second substrate, and the rotation device rotates the second substrate at a speed at which the cleaning liquid scatters from the second upper surface, the first guard is located at the upper position; when the first guard is located at the upper position, as viewed from a holding position where the rotation device holds the substrate along a direction perpendicular to the rotation axis, the first guard is located between the holding position and the second guard, When the first guard is located at the lower position, the first guard is not between the holding position and the second guard as viewed along the direction, The cleaning liquid has a component for removing the solute attached to a surface of the first guard facing the rotating device.

8. 8. The substrate processing apparatus according to claim 7, further comprising a control device that controls the rotation of the substrate by the rotation device, the position of the first guard, the position of the second guard, the discharge of the processing liquid from the processing liquid discharge nozzle, the discharge of the stripping liquid from the stripping liquid discharge nozzle, and the discharge of the cleaning liquid from the cleaning liquid discharge nozzle.

9. 9. The substrate processing apparatus according to claim 7, wherein the second substrate is the first substrate.

10. The substrate processing apparatus of claim 7 or 8, wherein the second substrate and the first substrate are different.

11. a residue removing liquid ejection nozzle that ejects a residue removing liquid downward to remove residue on the first upper surface after the retention layer formed on the first upper surface is peeled off. The substrate processing apparatus of claim 7 .

12. The substrate processing apparatus according to claim 11 , wherein the residue removing liquid is used as the cleaning liquid, and the residue removing liquid discharge nozzle also serves as the cleaning liquid discharge nozzle.

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