Substrate processing apparatus

Abstract

To provide a substrate processing apparatus that cools an electrode plate.SOLUTION: A substrate processing apparatus includes an electrode plate, an electrode support member supporting the electrode plate and having a first heat transfer medium chamber in which a liquid heat transfer medium is stored, a shielding box having a second heat transfer medium chamber and a cooling water flow path and disposed above the electrode support, and a communicating pipe communicating with the first heat transfer medium chamber and the second heat transfer medium chamber.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a plasma processing apparatus in which a flow path is formed in a support that supports a top plate, and a heat transfer medium circulates between a chiller unit and the flow path. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-192728 A Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a substrate processing apparatus that cools an electrode plate. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, a substrate processing apparatus is provided comprising: an electrode plate; an electrode support supporting the electrode plate and having a first heat transfer medium chamber in which a liquid heat transfer medium is stored; a shielding box having a second heat transfer medium chamber and a cooling water flow path and positioned above the electrode support; and a communicating pipe communicating with the first heat transfer medium chamber and the second heat transfer medium chamber. Effect of the Invention

[0006] According to one aspect, a substrate processing apparatus that cools an electrode plate can be provided. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is an example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Diagram 2] FIG. 2 is a schematic cross-sectional view illustrating an example of a temperature adjustment mechanism of a shower head. [Diagram 3] FIG. 11 is a schematic cross-sectional view illustrating another example of the temperature adjustment mechanism of the shower head. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments will now be described in detail with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0009] [Plasma processing system] An example of the configuration of a plasma processing system will be described below. Fig. 1 is an example of a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus (substrate processing apparatus) 1.

[0010] The plasma processing system includes a capacitively coupled plasma processing device 1 and a controller 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing device 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0011] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0012] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to a radio frequency (RF) power source 31 and / or a direct current (DC) power source 32 described later may be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as a plurality of lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one lower electrode.

[0013] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0014] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0015] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, a plurality of gas circulation holes 13c, and a plurality of gas inlets 13d. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and the gas circulation holes 13c and is introduced into the plasma processing space 10s from the plurality of gas inlets 13d. The shower head 13 also includes at least one upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGI) attached to one or more openings formed in the sidewall 10a.

[0016] The showerhead 13 also includes an electrode plate 131 and an electrode support 132. The showerhead 13 is supported on an upper portion of the plasma processing chamber 10 via an insulating member 14.

[0017] The electrode plate 131 is disposed to face the substrate W supported by the substrate support 11. A plurality of gas inlets 13d are formed in the electrode plate 131. The electrode plate 131 is made of a material containing Si (for example, Si, SiC, etc.).

[0018] The electrode support 132 is provided above the electrode plate 131 and detachably supports the electrode plate 131. A gas diffusion chamber 13b is formed inside the electrode support 132. A plurality of gas circulation holes 13c are formed inside the electrode support 132, which communicate from the gas diffusion chamber 13b to the gas inlet 13d of the electrode plate 131. The electrode support 132 is made of a conductive material such as a metal or a metal matrix composite material (MMC: Metal Matrix Composites). For example, aluminum can be used as the metal. For example, a metal matrix composite material made of ceramics and aluminum can be used as the metal matrix composite material. The surface of the electrode support 132 may be anodized (alumite treatment).

[0019] Moreover, the electrode plate 131 functions as an upper electrode. The electrode support 132 is electrically connected to the electrode plate 131. The power supply 30, which will be described later, is connected to the electrode support 132. As a result, the power supply 30 applies a second DC signal, which will be described later, to the electrode plate 131 via the electrode support 132. The power supply 30 may also be configured to supply a source RF signal, which will be described later, to the electrode plate 131 via the electrode support 132. The showerhead 13 including the electrode plate 131 and the electrode support 132 is an example of an electrode assembly (upper electrode assembly).

[0020] The electrode support 132 is in thermal contact with the electrode plate 131 to cool the electrode plate 131. The electrode support 132 is also called a cooling plate. A first heat transfer medium chamber 13s that stores a liquid heat transfer medium 19 (see FIG. 2) is provided inside the electrode support 132. Although the first heat transfer medium chamber 13s is shown divided in FIG. 1, they communicate with each other on the front side and / or the back side of the paper, forming an integrated first heat transfer medium chamber 13s. The temperature adjustment mechanism of the shower head 13 will be described later with reference to FIG. 2.

[0021] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse a flow rate of the at least one process gas.

[0022] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more processing gases in the plasma processing chamber 10. In addition, a bias potential is generated on the substrate W by supplying a bias RF signal to the at least one lower electrode, and ion components in the formed plasma can be attracted to the substrate W.

[0023] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0024] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0025] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0026] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular or combination thereof pulse waveform. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one period. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0027] Further, a shielding box 10b made of a conductor such as aluminum is provided on the upper part of the plasma processing chamber 10. The shielding box 10b is provided so as to cover the upper electrode (shower head 13). The shielding box 10b is grounded via the plasma processing chamber 10. As a result, the shielding box 10b shields the electric field formed by the upper electrode (shower head 13) to which a voltage is applied from a power source 30.

[0028] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0029] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0030] Next, the temperature adjustment mechanism of the shower head 13 will be further described with reference to Fig. 2. Fig. 2 is an example of a schematic cross-sectional view illustrating the temperature adjustment mechanism of the shower head 13. Note that in Fig. 2, the structure for introducing a processing gas into the plasma processing space 10s (gas supply port 13a, gas diffusion chamber 13b, gas circulation hole 13c, gas inlet 13d, etc.) is omitted from illustration.

[0031] The electrode plate 131 abuts against the lower surface of the electrode support 132 and is supported by the electrode support 132. A heater 16 is provided on the upper surface of the electrode support 132. The heater 16 generates heat when power is supplied from a heater power supply (not shown), and heats the electrode support 132. The heater power supply is controlled by the control unit 2.

[0032] The electrode support 132 is made of a material that is electrically conductive and has good thermal conductivity (for example, aluminum, etc.). The electrode support 132 is connected to the second DC generating unit 32b, and a second DC signal is applied from the second DC generating unit 32b. The electrode support 132 has a first heat transfer medium chamber 13s inside the electrode support 132. A liquid heat transfer medium 19 is stored in the first heat transfer medium chamber 13s. An opening that communicates with the outside is provided on the upper surface of the first heat transfer medium chamber 13s. A communication pipe 15 is connected to this opening.

[0033] The shielding box 10b is made of a material (such as aluminum) that is electrically conductive and has good thermal conductivity. The shielding box 10b is grounded. The shielding box 10b has a second heat transfer medium chamber 10bs in the wall surface of the shielding box 10b. Here, the shielding box 10b is disposed above the electrode support 132. The second heat transfer medium chamber 10bs is disposed above (at a higher position) than the first heat transfer medium chamber 13s. The second heat transfer medium chamber 10bs is supplied with a vaporized heat transfer medium. An opening communicating with the outside is provided on the lower surface of the second heat transfer medium chamber 10bs. A communication pipe 15 is connected to this opening. The shielding box 10b has a cooling water flow path 10br in the wall surface of the shielding box 10b. Water (such as city water, clean water, tap water, or industrial water) flows through the cooling water flow path 10br as cooling water.

[0034] The communicating pipe 15 is made of an insulating material, and one end is connected to an opening provided on the upper surface of the first heat transfer medium chamber 13s of the electrode support 132, and the other end is connected to an opening provided on the lower surface of the second heat transfer medium chamber 10bs of the shielding box 10b. In this way, the communicating pipe 15 connects the first heat transfer medium chamber 13s of the electrode support 132 and the second heat transfer medium chamber 10bs of the shielding box 10b so that they communicate with each other. The communicating pipe 15 also provides insulation between the grounded shielding box 10b and the electrode support 132 to which the second DC signal is applied.

[0035] A non-conductive heat transfer medium is used as the heat transfer medium 19. For example, brine (antifreeze) or the like can be used as the heat transfer medium 19. For example, Fluorinert or the like can be used as the heat transfer medium 19.

[0036] The pressure regulating valve 17 is connected to communicate with the second heat transfer medium chamber 10bs. The pressure regulating valve 17 adjusts the pressure of the second heat transfer medium chamber 10bs. In other words, the pressure regulating valve 17 adjusts the pressure of the first heat transfer medium chamber 13s which communicates with the second heat transfer medium chamber 10bs. The other end of the pressure regulating valve 17 may be connected to an external space and configured to purge the heat transfer medium from the second heat transfer medium chamber 10bs to the external space. In addition, the other end of the pressure regulating valve 17 may be connected to a heat transfer medium supply source (not shown) and configured to supply the heat transfer medium from the heat transfer medium supply source to the second heat transfer medium chamber 10bs.

[0037] Next, an example of temperature control of the shower head 13 in the plasma processing apparatus 1 will be described.

[0038] First, the control unit 2 controls the heater power supply to cause the heater 16 to generate heat and preheat the electrode support 132 to a temperature close to the boiling point (boiling temperature, vaporization temperature) of the first heat transfer medium chamber 13s. The preheating temperature is preferably lower than the boiling point of the first heat transfer medium chamber 13s. Alternatively, the preheating temperature may be higher than the boiling point of the first heat transfer medium chamber 13s.

[0039] Next, the control unit 2 performs substrate processing on the substrate W using the plasma processing apparatus 1. At this time, plasma is generated in the plasma processing space 10s. Therefore, heat of the plasma enters the electrode plate 131, is transferred to the electrode support 132, and is further transferred to the heat transfer medium 19 in the first heat transfer medium chamber 13s.

[0040] When the heat of the plasma is input to the liquid heat transfer medium 19 in the first heat transfer medium chamber 13s and the liquid heat transfer medium 19 reaches its boiling point, the liquid heat transfer medium 19 boils and vaporizes. As shown by the dashed arrow, the vaporized heat transfer medium flows up the communicating pipe 15 from an opening provided on the upper surface of the first heat transfer medium chamber 13s and into the second heat transfer medium chamber 10bs.

[0041] The shield box 10b is cooled by the cooling water flowing through the cooling water flow path 10br. Therefore, the gaseous heat transfer medium that flows from the communicating pipe 15 into the second heat transfer medium chamber 10bs is cooled and liquefied in the shield box 10b. The liquid heat transfer medium flows by gravity from the second heat transfer medium chamber 10bs along the wall surface of the communicating pipe 15 and returns to the first heat transfer medium chamber 13s, as shown by the solid arrow.

[0042] In this way, the heat of the plasma input to the electrode plate 131 can be cooled by the cooling water via the heat transfer medium 19. Also, the heat can be discharged from the electrode support 132 to the outside using the latent heat due to the phase change of the heat transfer medium 19, and compared to the case where a liquid heat transfer medium is circulated, the heat can be discharged from the electrode support 132 to the outside with high efficiency. Also, a chiller unit for circulating the liquid heat transfer medium can be omitted. In other words, the power consumption of the chiller unit can be reduced.

[0043] Furthermore, by using the communication pipe 15 made of an insulating material and the non-conductive heat transfer medium 19, it is possible to ensure insulation between the shielding box 10b and the electrode support 132. Furthermore, water can be made to flow through the cooling water flow path 10br of the grounded shielding box 10b. This allows the shielding box 10b to be efficiently cooled, and the electrode support 132 to be cooled via the heat transfer medium 19.

[0044] Furthermore, the temperature of the electrode support 132 becomes constant at the boiling point of the heat transfer medium 19, and the temperature becomes stable. That is, the temperature of the electrode plate 131 supported and cooled by the electrode support 132 also becomes constant and stable. As the temperature of the electrode plate 131 becomes stable, the processing of the substrate W also becomes stable.

[0045] 1, the first heat transfer medium chamber 13s is provided above the gas diffusion chamber 13b. This ensures a large liquid surface area of ​​the heat transfer medium 19 stored in the first heat transfer medium chamber 13s, promotes evaporation of the heat transfer medium 19, and improves the efficiency of heat transfer between the electrode support 132 and the shield box 10b via the heat transfer medium 19.

[0046] In FIG. 2, the number of communicating pipes 15 connecting the first heat transfer medium chamber 13s and the second heat transfer medium chamber 10bs is illustrated as one, but this is not limited thereto and a plurality of communicating pipes may be provided.

[0047] Fig. 3 is another example of a schematic cross-sectional view illustrating the temperature adjustment mechanism of the shower head 13. Note that, in Fig. 3, similar to Fig. 2, the structure for introducing the processing gas into the plasma processing space 10s (gas supply port 13a, gas diffusion chamber 13b, gas circulation hole 13c, gas inlet 13d, etc.) is omitted.

[0048] A plurality of communication pipes 15 (three in the example of FIG. 3) are provided to communicate between the first heat transfer medium chamber 13s and the second heat transfer medium chamber 10bs.

[0049] The upper surface of the second heat transfer medium chamber 10bs is a tapered surface 10bt. The tapered surface 10bt is preferably inclined so that the outer periphery of the second heat transfer medium chamber 10bs is higher and the center of the second heat transfer medium chamber 10bs is lower. This allows the gaseous heat transfer medium to liquefy when it comes into contact with the tapered surface 10bt, and to flow toward the center by the tapered surface 10bt as shown by the solid arrow in FIG. 3. This prevents the liquefied heat transfer medium from adhering to the upper surface (tapered surface 10bt) of the second heat transfer medium chamber 10bs and impeding the contact (heat exchange) between the gaseous heat transfer medium and the upper surface of the second heat transfer medium chamber 10bs.

[0050] The communicating pipe 15 is provided at the center of the second heat transfer medium chamber 10bs. In other words, the communicating pipe 15 is disposed below the position where the tapered surface 10bt is formed at the lowest position. This allows the liquid heat transfer medium dripping from the tapered surface 10bt to return to the first heat transfer medium chamber 13s through the communicating pipe 15 provided at the center of the second heat transfer medium chamber 10bs.

[0051] The above disclosed embodiments include, for example, the following aspects. (Appendix 1) An electrode plate; an electrode support member supporting the electrode plate and having a first heat transfer medium chamber in which a liquid heat transfer medium is stored; a shield box having a second heat transfer medium chamber and a cooling water flow path and disposed above the electrode support; A communication pipe communicating with the first heat transfer medium chamber and the second heat transfer medium chamber. Substrate processing equipment. (Appendix 2) the first heat transfer medium chamber has an opening on an upper surface, The second heat transfer medium chamber has an opening on a lower surface, The communication pipe has one end connected to the opening of the first heat transfer medium chamber and the other end connected to the opening of the second heat transfer medium chamber. 2. The substrate processing apparatus of claim 1. (Appendix 3) A DC signal is applied to the electrode support from a power source, The shielding box is grounded. The communication pipe is made of an insulating material. 3. The substrate processing apparatus according to claim 1 or 2. (Appendix 4) The heat transfer medium is a non-conductive heat transfer medium. 4. The substrate processing apparatus according to claim 3. (Appendix 5) The heat transfer medium is brine. 5. The substrate processing apparatus according to claim 1, (Appendix 6) The cooling water flowing through the cooling water flow path is water. 6. The substrate processing apparatus according to claim 1, (Appendix 7) Further comprising a heater for heating the electrode support. 7. The substrate processing apparatus according to claim 1, (Appendix 8) Further comprising a pressure regulating valve for adjusting the pressure of the second heat transfer medium chamber. 8. The substrate processing apparatus according to claim 1, (Appendix 9) The upper surface of the second heat transfer medium chamber has a tapered surface, The tapered surface is inclined so that the outer periphery side of the second heat transfer medium chamber is higher and the center side of the second heat transfer medium chamber is lower. 9. The substrate processing apparatus according to claim 1, (Appendix 10) The communication pipe is disposed below a position where the tapered surface is formed at the lowest position. 10. The substrate processing apparatus according to claim 9. (Appendix 11) The electrode support has a gas diffusion chamber for a process gas, The first heat transfer medium chamber is provided above the gas diffusion chamber. 11. The substrate processing apparatus of claim 10.

[0052] The present invention is not limited to the configurations shown in the above embodiments, combinations with other elements, etc. These points can be changed without departing from the spirit of the present invention, and can be appropriately determined according to the application form. [Explanation of symbols]

[0053] W substrate 1. Plasma processing equipment 2. Control section 10 Plasma Processing Chamber 10a side wall 10b Shielding box 10bs Second heat transfer medium chamber 10bt tapered surface 10br cooling water flow path 10s Plasma treatment space 13. Shower Head 131 Electrode plate 132 Electrode support 13s First heat transfer medium chamber 14 Insulating materials 15 Communication pipe 16 Heater 17 Pressure Regulating Valve 19 Heat Transfer Media 10e Gas exhaust port 11 Substrate support 20 Gas supply section 30 power supply 31 RF power supply 32 DC power supply 40 Exhaust system

Claims

1. An electrode plate; an electrode support member supporting the electrode plate and having a first heat transfer medium chamber in which a liquid heat transfer medium is stored; a shield box having a second heat transfer medium chamber and a cooling water flow path and disposed above the electrode support; a communication pipe communicating with the first heat transfer medium chamber and the second heat transfer medium chamber; Substrate processing equipment.

2. the first heat transfer medium chamber has an opening on an upper surface, The second heat transfer medium chamber has an opening on a lower surface, The communication pipe has one end connected to the opening of the first heat transfer medium chamber and the other end connected to the opening of the second heat transfer medium chamber. The substrate processing apparatus according to claim 1 .

3. A DC signal is applied to the electrode support from a power source, The shielding box is grounded. The communication pipe is made of an insulating material. The substrate processing apparatus according to claim 1 .

4. The heat transfer medium is a non-conductive heat transfer medium. The substrate processing apparatus according to claim 3 .

5. The heat transfer medium is brine. The substrate processing apparatus according to claim 1 .

6. The cooling water flowing through the cooling water flow path is water. The substrate processing apparatus according to claim 1 .

7. Further comprising a heater for heating the electrode support. The substrate processing apparatus according to claim 1 .

8. Further comprising a pressure regulating valve for regulating the pressure of the second heat transfer medium chamber. The substrate processing apparatus according to claim 1 .

9. The upper surface of the second heat transfer medium chamber has a tapered surface, the tapered surface is inclined so that the outer periphery side of the second heat transfer medium chamber is higher and the center side of the second heat transfer medium chamber is lower. The substrate processing apparatus according to claim 1 .

10. The communication pipe is disposed below a position where the tapered surface is formed at the lowest position. The substrate processing apparatus according to claim 9 .

11. The electrode support has a gas diffusion chamber for a process gas, The first heat transfer medium chamber is provided above the gas diffusion chamber. The substrate processing apparatus according to claim 10 .

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