Production system for fish and shellfish and production method for fish and shellfish

The seafood production system integrates plasma generation directly with the breeding tank to supply low-temperature plasma and active gases, addressing the challenges of equipment space and cost while enhancing growth rates by maintaining active species efficacy.

JP2025013270APending Publication Date: 2025-01-24SEKISUI CHEMICAL CO LTD

Patent Information

Application Number
JP2024111138
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-07-12
Filing Date
2024-07-10
Publication Date
2025-01-24

AI Technical Summary

Technical Problem

Existing seafood production methods that utilize plasma to promote growth require additional equipment, increasing installation area and running costs, and suffer from deactivation of active species before reaching the breeding tank.

Method used

A seafood production system that integrates a plasma generation section with a breeding tank, using low-temperature plasma and active gases directly supplied to the breeding water, eliminating the need for separate tanks and circulation pumps, and optimizing gas supply to maintain active species efficacy.

Benefits of technology

The system effectively promotes seafood growth while minimizing equipment installation area and running costs, ensuring active species are efficiently delivered to the breeding water, enhancing growth rates.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2025013270000001_ABST
    Figure 2025013270000001_ABST
Patent Text Reader

Abstract

To effectively promote the growth of fish and shellfish while restraining an increase in the footprint of a device and an increase in running costs.SOLUTION: A production system for fish and shellfish comprises a rearing tank housing rearing water, a plasma generation part including an electrode, and a gas flow passage part through which process gas to be supplied to the plasma generation part flows. Plasma generated by the electrode is low-temperature plasma. At least one of the plasma and active gas generated by the plasma is supplied to the rearing tank.SELECTED DRAWING: Figure 1
Need to check novelty before this filing date? Find Prior Art

Description

[Technical field]

[0001] The present disclosure relates to a seafood production system and a seafood production method. [Background technology]

[0002] For example, a fish production method that utilizes plasma to promote the growth of fish is known, as disclosed in Patent Document 1. In the fish production method disclosed in Patent Document 1, a portion of the rearing water in which fish are reared is separated, the separated portion of the rearing water is irradiated with plasma, and the plasma-irradiated rearing water is mixed back into the original rearing water.

[0003] The method of Patent Document 1 requires a separation tank for separating a part of the rearing water from the rearing tank for rearing fishes, as well as piping for connecting the separation tank and the rearing tank, and a circulation pump for circulating the rearing water between the separation tank and the rearing tank. This increases the installation area of ​​the device. In addition, the need to drive the circulation pump increases the running cost.

[0004] In addition, in order to promote the growth of fish, it is necessary to effectively supply the active species generated by plasma to the fish in the breeding water. However, in the method of Patent Document 1, there is a possibility that the active species may be inactivated before the plasma-treated breeding water travels from the separation layer to the breeding tank in which the fish are bred. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2018-201415 A Summary of the Invention [Problem to be solved by the invention]

[0006] In view of the above, the present disclosure aims to provide a seafood production system and a seafood production method that can effectively promote the growth of seafood while suppressing increases in the installation area of ​​the equipment and in running costs. [Means for solving the problem]

[0007] A first aspect of the present disclosure is a method for manufacturing a semiconductor device comprising: A breeding tank for containing water for breeding fish and shellfish; a plasma device including a plasma generating section including an electrode for generating plasma, a gas flow passage section through which a process gas supplied to the plasma generating section flows, and an irradiation section for irradiating at least one of the plasma generated by the electrode and an active gas including active species generated by the plasma; a gas supply pipe having a first end connected to the irradiation unit and a second end opposite to the first end and located inside the breeding water, the gas supply pipe supplying the active gas into the breeding water; The plasma generated by the electrodes is a low-temperature plasma, and the seafood production system.

[0008] A second aspect of the present disclosure is A breeding tank for containing breeding water; A plasma generating unit including an electrode; a gas flow passage section through which a process gas supplied to the plasma generating section flows, The plasma generated by the electrodes is a low-temperature plasma; This is a seafood production system, wherein at least one of the plasma and the activated gas generated by the plasma is supplied to the breeding tank.

[0009] A third aspect of the present disclosure is a seafood production system according to the first aspect or the second aspect described above, wherein at least one of the plasma and the active gas is supplied directly to the breeding tank.

[0010] A fourth aspect of the present disclosure is a seafood production system according to any one of the first aspect to the third aspect described above, wherein at least one of the plasma and the active gas is irradiated or aerated into the breeding water in the breeding tank.

[0011] A fifth aspect of the present disclosure is a seafood production system according to any of the first to fourth aspects described above, wherein the low-temperature plasma is generated by microwave discharge.

[0012] A sixth aspect of the present disclosure is the fish and shellfish production system according to the fifth aspect described above, wherein the frequency of the power supplied to the electrodes is not less than 2 GHz and not more than 3 GHz.

[0013] A seventh aspect of the present disclosure is a seafood production system according to any one of the first to fourth aspects described above, wherein the low-temperature plasma is generated by dielectric barrier discharge.

[0014] An eighth aspect of the present disclosure is a seafood production system according to any one of the first aspect to the seventh aspect described above, wherein the process gas contains oxygen and nitrogen.

[0015] A ninth aspect of the present disclosure is a seafood production system according to any one of the first to eighth aspects described above, wherein the flow rate of the active gas supplied to the breeding water per liter of volume is 0.2 L / min or more, and the supply time of the active gas to the breeding water is 20 minutes or more per day.

[0016] A tenth aspect of the present disclosure is a seafood production system according to any one of the first to ninth aspects described above, wherein the amount of the active gas supplied to the breeding water per 1 L of volume is 4 L or more per day.

[0017] An eleventh aspect of the present disclosure is a fish and shellfish production system according to any one of the second aspect to the tenth aspect described above, an irradiation unit that is located downstream of the plasma generating unit and that irradiates at least one of the plasma and the active gas; a gas supply pipe including a first end connected to the irradiation unit; At least one of the plasma and the active gas is supplied to the breeding tank from a second end of the gas supply pipe opposite to the first end, The second end of the gas supply pipe is located within the rearing water or is connected to a side wall of the rearing tank, a seafood production system.

[0018] A twelfth aspect of the present disclosure is a seafood production system according to the first aspect or the eleventh aspect described above, wherein at least a portion of the inner surface of the gas supply pipe is formed from a non-conductive material.

[0019] A thirteenth aspect of the present disclosure is a seafood production system according to any one of the first aspect, the eleventh aspect, and the twelfth aspect described above, wherein the second end of the gas supply pipe is located closer to the bottom of the rearing water than the midpoint between the surface and the bottom of the rearing water.

[0020] A fourteenth aspect of the present disclosure is a seafood production system according to the first aspect described above and any of the eleventh aspect to the thirteenth aspect described above, comprising an aeration pipe connected to the second end of the gas supply pipe and positioned inside the breeding water.

[0021] A fifteenth aspect of the present disclosure is a seafood production system according to any one of the first aspect described above and the eleventh aspect to the fourteenth aspect described above, wherein the maximum temperature of the active gas irradiated from the irradiation section is 60°C or higher and 300°C or lower.

[0022] A sixteenth aspect of the present disclosure is a method for manufacturing a semiconductor device comprising: A method for producing seafood using a seafood production system according to any one of the first aspect and the eleventh aspect to the fifteenth aspect, comprising: a plasma generating step of generating the plasma by the electrode; an irradiation step of irradiating at least one of the plasma and the active gas from the irradiation unit; and an active gas supplying step of supplying the active gas into the breeding water through the gas supply pipe.

[0023] A seventeenth aspect of the present disclosure is a method for manufacturing a semiconductor device comprising: A method for producing seafood using a seafood production system according to any one of the first to fifteenth aspects described above, a plasma generating step of generating the plasma by the electrode; supplying at least one of the plasma and an active gas generated by the plasma to the breeding tank. Effect of the Invention

[0024] According to the present disclosure, it is possible to effectively promote the growth of fish and shellfish while suppressing an increase in the installation area of ​​the device and an increase in running costs. [Brief description of the drawings]

[0025] [Figure 1] FIG. 1 is a schematic configuration diagram showing a seafood production system according to a first embodiment. [Diagram 2] FIG. 2 is a cross-sectional view showing the configuration of the plasma device included in FIG. [Diagram 3] FIG. 3 is a schematic configuration diagram showing a seafood production system according to the second embodiment. [Figure 4] FIG. 4 is a schematic diagram showing a seafood production system according to the third embodiment. [Diagram 5]FIG. 5 is a schematic configuration diagram showing a seafood production system according to the fourth embodiment. [Figure 6] FIG. 6 is a graph showing the weight gain of Nile pirate fish versus the number of days they were reared in the comparative example and each example. [Figure 7] FIG. 7 is a graph showing the weight gain rate of Nile Pilates in the comparative example and each example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] Hereinafter, a seafood production system and a seafood production method according to an embodiment of the present disclosure will be described with reference to the drawings. In the drawings attached to this specification, the scale and aspect ratios are appropriately changed and exaggerated from those of the actual objects for the convenience of illustration and ease of understanding. In addition, configurations shown in some drawings may be omitted in other drawings.

[0027] First, a seafood production system 1 according to the first embodiment will be described. The seafood production system 1 according to the present embodiment is a system for raising seafood, and is a system for promoting the growth of seafood by using plasma.

[0028] As shown in FIG. 1, a fish and shellfish production system 1 according to this embodiment includes a breeding tank 2, a plasma device 10, a gas supply device 20, and a power supply device 30.

[0029] The breeding tank 2 contains breeding water 4 in which fish and shellfish 3 are raised. That is, the fish and shellfish 3 are raised in the breeding water 4 of the breeding tank 2. A plurality of fish and shellfish 3 may be raised in the breeding water 4. Examples of the fish and shellfish 3 include marine animals such as shrimp, crabs, octopus, squid, sea urchins, and sea cucumbers. The breeding water 4 may contain minerals and organic matter in addition to water.

[0030] Although not shown, the breeding tank 2 may be provided with a heater for heating the breeding water 4, an aeration system for supplying oxygen to the breeding water 4, and a filtration filter such as a throw-in filter or an external filter for filtering the breeding water 4.

[0031] The number of fish and shellfish 3 reared in the rearing water 4 is arbitrary. The number of fish and shellfish 3 reared in the rearing water 4 may be one, or may be two or more. The number of fish and shellfish 3 reared in the rearing water 4 may be, for example, 10 or more, 50 or more, or 200 or more. The volume of the rearing water 4 is also arbitrary. The volume of the rearing water 4 may be, for example, 20 L or more, 100 L or more, or 500 L or more. As an example, 20 fish may be reared in 50 L of rearing water 4. The temperature of the rearing water 4 may be 10 degrees or more and 30 degrees or less.

[0032] In the illustrated example, only one breeding tank 2 is provided, but multiple breeding tanks 2 may be provided. That is, fish and shellfish 3 may be raised in the breeding water 4 of each of the multiple breeding tanks 2.

[0033] The plasma device 10 is a device that generates plasma and irradiates at least one of the plasma and an active gas containing active species generated by the plasma. In this embodiment, the plasma device 10 may be a microwave discharge type plasma device that generates low-temperature plasma by microwave discharge.

[0034] As shown in FIG. 2, the plasma device 10 includes a housing 11, a plasma generating section 12, a gas flow path section 13, and an irradiation section .

[0035] The housing 11 may include a cylindrical body 11a, a blocking plate 11b, a mounting plate 11c, and an insulating tube 11d. The cylindrical body 11a, the blocking plate 11b, and the mounting plate 11c may be conductive. The insulating tube 11d may be insulating. A ground potential is applied to the housing 11.

[0036] The cylindrical body 11a may be formed in a cylindrical shape with both ends open. The blocking plate 11b may be formed in a disk shape and attached to one end (upper side in FIG. 2) of the cylindrical body 11a to block one opening of the cylindrical body 11a. The attachment plate 11c may be formed in an annular shape and attached to the other end (lower side in FIG. 2) of the cylindrical body 11a.

[0037] A fitting portion 11e into which a flange portion 11f of an insulating tube 11d (described later) is fitted may be formed on the inner peripheral surface at the other end (the lower side in FIG. 2) of the cylindrical body 11a. The mounting plate 11c may support the insulating tube 11d by clamping the flange portion 11f of the insulating tube 11d between the mounting plate 11c and the fitting portion 11e.

[0038] The insulating tube 11d may be formed in a cylindrical shape with both ends open. The insulating tube 11d may be formed so that its outer diameter is smaller than the inner diameter of the cylindrical body 11a, and may be disposed inside the cylindrical body 11a. The outer diameter of the insulating tube 11d may be formed to be approximately the same as the inner diameter of the mounting plate 11c, and one end of the insulating tube 11d (the lower side in FIG. 2) may be fitted inside the mounting plate 11c.

[0039] An annular flange portion 11f that protrudes in the radial direction around the entire circumference may be formed on the outer circumferential surface of the insulating tube 11d at a position close to one end (the lower side in FIG. 2). As described above, the flange portion 11f of the insulating tube 11d may be fitted into the fitting portion 11e of the cylindrical body 11a. The insulating tube 11d may be supported by clamping the flange portion 11f between the fitting portion 11e and the mounting plate 11c.

[0040] The inner circumferential surface of the insulating tube 11d near one end (the lower side in FIG. 2) may be tapered so that the inner diameter becomes smaller toward one side (the lower side in FIG. 2). An opening on one side of the insulating tube 11d may form an irradiation port 14a of the irradiation unit 14 described later.

[0041] The plasma generating unit 12 is provided inside the housing 11. The plasma generating unit 12 is a portion that generates plasma inside the plasma device 10. The plasma generating unit 12 includes an electrode 12a that generates plasma.

[0042] The electrode 12a may be attached to the inner surface of the blocking plate 11b. The electrode 12a may be formed in a rod shape extending from the inner surface of the blocking plate 11b. The electrode 12a may be formed in a cylindrical shape. The electrode 12a may extend into the insulating tube 11d, and one end 12b of the electrode 12a may be located inside the insulating tube 11d.

[0043] The electrode 12a is electrically connected to a power supply device 30, which will be described later. More specifically, the electrode 12a is electrically connected to the power supply device 30 via a coaxial cable 31 and a copper wire 12c. The coaxial cable 31 is electrically connected to the power supply device 30 (see FIG. 1). The copper wire 12c is electrically connected to the coaxial cable 31. The copper wire 12c is introduced into the housing 11 through a through hole 11g formed in the cylindrical body 11a and is electrically connected to the electrode 12a. The electrode 12a generates plasma when power P is supplied from the power supply device 30 via the coaxial cable 31 and the copper wire 12c and a voltage is applied to the electrode 12a.

[0044] The electrode 12a is made of a conductive material, such as metals such as stainless steel, copper, and tungsten, and carbon.

[0045] Furthermore, the plasma generating section 12 is supplied with a process gas Gp from a gas supplying device 20, which will be described later. The process gas Gp is ​​supplied from the gas supplying device 20 to the plasma generating section 12 via a gas pipe 21 and a gas flow path section 13. The gas pipe 21 is connected to the gas supplying device 20 and is a pipe through which the process gas Gp from the gas supplying device 20 flows (see FIG. 1). The gas flow path section 13 will be described later. The electrode 12a ionizes the process gas Gp supplied from the gas supplying device 20 via the gas pipe 21 and the gas flow path section 13, thereby generating plasma.

[0046] The gas flow path section 13 is provided in the housing 11. The gas flow path section 13 is a section through which the process gas Gp flows and is supplied to the plasma generating section 12 in the plasma device 10. The gas flow path section 13 includes a gas supply path 13a, a first space section 13b, a second space section 13c, and a third space section 13d.

[0047] The gas supply path 13a is formed in the cylindrical body 11a of the housing 11. The gas supply path 13a is configured as a through hole extending radially from the outer peripheral surface of the cylindrical body 11a to reach the inner peripheral surface of the cylindrical body 11a. The gas supply path 13a is connected to the gas pipe 21, and is a flow path through which the process gas Gp that flows through the gas pipe 21 flows into the housing 11. The first space 13b is a space provided between the cylindrical body 11a and the insulating tube 11d. The second space 13c is a space provided between the blocking plate 11b and the insulating tube 11d. The third space 13d is a space provided inside the insulating tube 11d.

[0048] The gas supply passage 13a, the first space 13b, the second space 13c, and the third space 13d are mutually connected. The process gas Gp from the gas supply device 20 flows through the gas pipe 21, enters the housing 11 from the gas supply passage 13a, and is supplied to the plasma generating section 12 by flowing through the first space 13b, the second space 13c, and the third space 13d.

[0049] The irradiation unit 14 is located downstream of the plasma generation unit 12. The irradiation unit 14 irradiates at least one of the plasma generated by the electrode 12a of the plasma generation unit 12 and the active gas Ga containing active species generated by the plasma. The irradiation unit 14 may irradiate only the plasma, may irradiate only the active gas Ga containing active species generated by the plasma, or may irradiate both the plasma and the active gas Ga.

[0050] The active species are generated by the reaction of the plasma with a gas in the plasma or a gas around the plasma. Examples of the active species contained in the active gas Ga include hydroxyl radicals, singlet oxygen, ozone, hydrogen peroxide, superoxide anion radicals, nitric oxide, nitrogen dioxide, peroxynitrite, peroxynitrous acid, and dinitrogen trioxide. The active gas Ga may also contain components of the process gas Gp.

[0051] The irradiation unit 14 includes an irradiation port 14a. The irradiation port 14a constitutes the most downstream portion of the plasma device 10. The irradiation port 14a of the irradiation unit 14 constitutes an opening of the plasma device 10 that emits plasma generated in the plasma device 10. The irradiation unit 14 irradiates at least one of plasma and active gas Ga from the irradiation port 14a. As shown in FIG. 2, the irradiation port 14a may be constituted by an opening on one side of the insulating tube 11d (the lower side in FIG. 2).

[0052] In this embodiment, the plasma generated by the electrode 12a of the plasma device 10 is low-temperature plasma (non-thermal equilibrium plasma). The low-temperature plasma may be atmospheric pressure low-temperature plasma (atmospheric pressure non-thermal equilibrium plasma) generated by discharge under atmospheric pressure. As described above, the plasma device 10 according to this embodiment is a microwave discharge type plasma device, and the low-temperature plasma is generated by microwave discharge.

[0053] Since the plasma generated by the electrode 12a is a low-temperature plasma, the temperature of the active gas Ga can also be made low. When the active gas Ga is irradiated from the irradiation unit 14, the maximum temperature of the active gas Ga irradiated from the irradiation unit 14 may be 60°C or higher, 70°C or higher, or 80°C or higher. In addition, the maximum temperature of the active gas Ga irradiated from the irradiation unit 14 may be 300°C or lower, 200°C or lower, or 100°C or lower.

[0054] Here, the maximum temperature of the active gas Ga means the temperature at the hottest part of the active gas Ga irradiated from the irradiation unit 14. The hottest part is considered to differ depending on the conditions, but for example, the active gas Ga may show the highest temperature at a position a predetermined distance (about several mm) away from the plasma generating unit 12 in the irradiation direction. The temperature of the active gas Ga can be measured by a thermocouple by placing the thermocouple at the temperature measurement position of the active gas Ga.

[0055] The gas supply device 20 is a device that supplies a process gas Gp to the plasma generating section 12 of the plasma device 10. The gas supply device 20 may have a pressure-resistant container that contains the process gas Gp therein. As shown in FIG. 1, the gas supply device 20 is connected to a gas pipe 21. As described above, the gas pipe 21 is connected to the gas supply path 13a of the gas supply device 20. The gas supply device 20 supplies the process gas Gp to the plasma generating section 12 via the gas pipe 21 and the gas supply path 13a.

[0056] The gas supply device 20 can adjust the flow rate of the process gas Gp supplied to the plasma device 10. By adjusting the flow rate of the process gas Gp supplied to the plasma device 10, it is possible to adjust the flow rate of the active gas Ga irradiated from the irradiation unit 14 of the plasma device 10. The flow rate of the active gas Ga irradiated from the irradiation unit 14 of the plasma device 10 is approximately the same as the flow rate of the process gas Gp supplied to the plasma device 10.

[0057] The process gas Gp may contain nitrogen and oxygen. In particular, the process gas Gp may contain air containing nitrogen and oxygen. The process gas Gp may also contain other gas components.

[0058] The power supply device 30 is a device that supplies power P to the electrode 12a of the plasma device 10. The power supply device 30 may be supplied with power from a power source such as a 100V household power source. As shown in FIG. 1, the power supply device 30 is electrically connected to the coaxial cable 31. As described above, the coaxial cable 31 is electrically connected to the copper wire 12c. As described above, the copper wire 12c is introduced into the housing 11 through the through hole 11g formed in the cylindrical body 11a and is electrically connected to the electrode 12a. The power supply device 30 supplies power P to the electrode 12a via the coaxial cable 31 and the copper wire 12c.

[0059] The output frequency of the power supply device 30, i.e., the frequency of the power P supplied from the power supply device 30 to the electrode 12a, may be 2 GHz or more and 3 GHz or less. As an example, the output frequency of the power supply device 30 may be 2.45 GHz. The output power of the power supply device 30 may be 60 W or more and 120 W or less. As an example, the output power of the power supply device 30 may be 95 W.

[0060] The power supply device 30 may be capable of switching the supply of power P on and off. When the supply of power P from the power supply device 30 is stopped, gas may be supplied from the gas supply device 20. The gas supply device 20 may supply air or oxygen. In this example, the gas supply device 20 may function as an oxygen supply device.

[0061] As shown in FIG. 1, the seafood production system 1 according to the present embodiment further includes a gas supply pipe 40.

[0062] The gas supply pipe 40 is a pipe through which the active gas Ga flows and supplies the active gas Ga to the inside of the breeding water 4. The gas supply pipe 40 may be formed in a cylindrical shape. The gas supply pipe 40 may be flexible. The gas supply pipe 40 has a first end 41 and a second end 42 opposite to the first end 41.

[0063] A first end 41 of the gas supply pipe 40 is connected to the irradiation unit 14 of the plasma device 10. The first end 41 may be directly connected to the irradiation port 14a of the irradiation unit 14, or may be indirectly connected to the irradiation unit 14 via some attachment member. As long as at least one of the plasma irradiated from the irradiation unit 14 and the active gas Ga flows into the gas supply pipe 40 from the first end 41, the connection method is arbitrary.

[0064] The second end 42 of the gas supply pipe 40 is located inside the breeding water 4 of the breeding tank 2. The second end 42 may be located on the bottom of the breeding tank 2. The second end 42 may be located on the water bottom 4b side of the middle 4c between the water surface 4a and the water bottom 4b of the breeding water 4. That is, the second end 42 may be located between the water bottom 4b and the middle 4c between the water surface 4a and the water bottom 4b of the breeding water 4 in the vertical direction. In other words, the second end 42 may be located in the lower half of the breeding water 4. The active gas Ga supplied to the breeding water 4 from the second end 42 of the gas supply pipe 40 rises in the breeding tank 2 and spreads throughout the breeding tank 2.

[0065] The plasma and active gas Ga flow into the gas supply pipe 40 from the first end 41, flow through the gas supply pipe 40, and are supplied into the breeding water 4 from the second end 42. That is, the plasma and active gas Ga are aerated into the breeding water 4 at the second end 42. In other words, the plasma and active gas Ga are released into the breeding water 4 from the second end 42 as air bubbles.

[0066] The inner diameter of the gas supply pipe 40 may be 0.5 mm or more, 1 mm or more, or 2 mm or more. The inner diameter of the gas supply pipe 40 may be 20 mm or less, 15 mm or less, or 10 mm or less. As an example, the inner diameter of the gas supply pipe 40 may be 4 mm.

[0067] The gas supply pipe 40 may be composed of an inner layer and an outer layer. The inner layer of the gas supply pipe 40 may be composed of a non-conductive material, for example, a fluororesin material such as PTFE, PFA, or PVDF. That is, at least a part of the inner surface of the gas supply pipe 40 may be formed of a non-conductive material. The outer layer of the gas supply pipe 40 may be composed of a resin material such as nylon, polyethylene, or polyurethane. As an example, the inner layer of the gas supply pipe 40 may be composed of PVDF, and the outer layer of the gas supply pipe 40 may be composed of polyurethane.

[0068] 1, the fish and shellfish production system 1 according to this embodiment may include a feeder 44. The feeder 44 supplies food for the fish and shellfish. The feeder 44 is preferably disposed near the second end 42 of the gas supply pipe 40. For example, the feeder 44 may be disposed above the breeding tank 2, above the second end 42.

[0069] 1, an aeration pipe 45 may be connected to the second end 42 of the gas supply pipe 40. That is, the fish and shellfish production system 1 according to this embodiment may include an aeration pipe 45 connected to the second end 42 of the gas supply pipe 40. The feeder 44 may be disposed above the breeding tank 2, above the aeration pipe 45.

[0070] The aeration pipe 45 is located inside the breeding water 4 of the breeding tank 2. The aeration pipe 45 may be located on the bottom of the breeding tank 2. A plurality of holes are provided on the surface of the aeration pipe 45 for releasing the active gas Ga. The active gas Ga that has flowed through the gas supply pipe 40 flows into the aeration pipe 45 from the second end 42, is released from the plurality of holes provided in the aeration pipe 45, and is supplied (aerated) into the breeding water 4.

[0071] The hole diameter of the air diffusion pipe 45 may be 1 μm or more, 5 μm or more, or 10 μm or more. The hole diameter of the air diffusion pipe 45 may be 100 μm or less, 80 μm or less, or 50 μm or less. As an example, the hole diameter of the air diffusion pipe 45 may be 20 μm. The air diffusion pipe 45 may be made of a resin material such as polyethylene or polypropylene.

[0072] In addition, when a plurality of breeding tanks 2 are provided, a respective gas supply pipe 40 may be provided for each breeding tank 2. In this case, a plurality of plasma devices 10 may also be provided, and the first ends 41 of the respective gas supply pipes 40 may be connected to the irradiation units 14 of the respective plasma devices 10. Alternatively, the irradiation unit 14 of one plasma device 10 may be branched, and the first ends 41 of the respective gas supply pipes 40 may be connected to the respective irradiation units 14. In either case, the second ends 42 of the respective gas supply pipes 40 are positioned inside the breeding water 4 of the corresponding breeding tank 2.

[0073] Furthermore, when the process gas Gp contains oxygen, the supply of power P from the power supply device 30 may be turned off so that the plasma device 10 does not generate plasma and irradiates the process gas Gp from the irradiation unit 14. In other words, by switching the power supply device 30 on and off, the plasma device 10 may switch the fluid to be supplied into the breeding water 4 between at least one of plasma and active gas Ga, and the process gas Gp.

[0074] The flow rate of the active gas Ga supplied to the breeding water 4 per 1 L of volume may be 0.05 L / min or more, 0.1 L / min or more, or 0.2 L / min or more. Here, the volume of the breeding water 4 and the flow rate of the active gas Ga are in a proportional relationship. For example, when the volume of the breeding water 4 is 50 L, the flow rate of the active gas Ga supplied to the breeding water 4 may be 2.5 L / min or more, 5 L / min or more, or 10 L / min or more. In this case, the supply time of the active gas Ga to the breeding water 4 may be 5 minutes or more per day, 10 minutes or more per day, or 20 minutes or more per day. As an example, the flow rate of the active gas Ga supplied to the breeding water 4 per 1 L of volume may be 0.2 L / min, and the supply time of the active gas Ga to the breeding water 4 may be 20 minutes per day.

[0075] Furthermore, the amount of active gas Ga supplied to the breeding water 4 per 1 L of volume may be 0.25 L or more per day, 1 L or more per day, or 4 L or more per day. Here, the volume of the breeding water 4 and the amount of active gas Ga supplied are in a proportional relationship. For example, when the volume of the breeding water 4 is 50 L, the amount of active gas Ga supplied to the breeding water 4 may be 12.5 L or more per day, 50 L or more per day, or 200 L or more per day.

[0076] The timing for supplying the active gas Ga to the breeding water 4 is arbitrary. For example, the active gas Ga may be supplied during the daytime, or at night. In addition, the active gas Ga may be continuously supplied once a day, or may be supplied in portions several times a day.

[0077] In the above-described seafood production system 1, the plasma device 10 is a microwave discharge type plasma device, and an example has been described in which the low-temperature plasma is generated by microwave discharge. However, the present invention is not limited to this, and the plasma device 10 may be a dielectric barrier discharge type plasma device, and the low-temperature plasma may be generated by dielectric barrier discharge. In this case, in the plasma device 10 shown in FIG. 2, a dielectric such as glass or ceramics is disposed between the electrode 12a and the housing 11. For example, the surface of the electrode 12a or the inner surface of the housing 11 may be covered with a dielectric. The low-temperature plasma may be generated by corona discharge, streamer discharge, direct current pulse discharge, atmospheric pressure glow discharge, or the like, in addition to microwave discharge and dielectric barrier discharge.

[0078] Next, a description will be given of a seafood production method for producing seafood 3 using the above-mentioned seafood production system 1. The seafood production method according to this embodiment is a method for raising seafood, and is a production method that promotes the growth of seafood by utilizing plasma.

[0079] The method for producing seafood according to this embodiment includes a process gas supplying step, a power supplying step, a plasma generating step, an irradiating step, and an active gas supplying step. These steps may be performed at any timing during the day. For example, they may be performed during the daytime or at night.

[0080] First, a process gas supply step is performed. In the process gas supply step, a process gas Gp is ​​supplied from a gas supply device 20 to a plasma generating section 12 of a plasma device 10. More specifically, the process gas Gp from the gas supply device 20 flows through a gas pipe 21 and a gas supply path 13a in the gas supply device 20, and is supplied to the plasma generating section 12.

[0081] Next, a power supply step is performed. In the power supply step, power P is supplied from the power supply device 30 to the electrode 12a of the plasma device 10. More specifically, the power P from the power supply device 30 is supplied to the electrode 12a via the coaxial cable 31 and the copper wire 12c. The power supply step may be performed before the process gas supply step. That is, the above-mentioned process gas supply step may be performed after the power supply step. Also, the process gas supply step and the power supply step may be performed simultaneously.

[0082] Next, a plasma generation process is performed. In the plasma generation process, plasma is generated by the electrode 12a of the plasma device 10. More specifically, the electrode 12a to which the power P is supplied from the power supply device 30 and a voltage is applied ionizes the process gas Gp supplied from the gas supply device 20, thereby generating plasma. This plasma reacts with the surrounding gas to generate active species, and generates an active gas Ga containing the active species.

[0083] Next, an irradiation step is performed. In the irradiation step, at least one of the plasma and the active gas Ga containing active species generated by the plasma is irradiated from the irradiation unit 14 of the plasma device 10. In the irradiation step, only the plasma may be irradiated from the irradiation unit 14, only the active gas Ga containing active species generated by the plasma may be irradiated, or both the plasma and the active gas Ga may be irradiated.

[0084] Thereafter, an active gas supplying step is performed. In the active gas supplying step, an active gas Ga containing active species is supplied into the breeding water 4 via the gas supply pipe 40. When the active gas Ga is irradiated from the irradiation unit 14, the active gas Ga is supplied into the breeding water 4 via the gas supply pipe 40. When the irradiation unit 14 irradiates plasma, the active gas Ga containing active species generated by the plasma is supplied into the breeding water 4 via the gas supply pipe 40.

[0085] Furthermore, when the aeration pipe 45 is connected to the second end 42 of the gas supply pipe 40, the active gas Ga is supplied into the breeding water 4 via the gas supply pipe 40 and the aeration pipe 45. More specifically, the active gas Ga that has flowed through the gas supply pipe 40 flows into the aeration pipe 45 from the second end 42, is released from a plurality of holes provided in the aeration pipe 45, and is supplied (aerated) into the breeding water 4.

[0086] In this manner, the active gas Ga containing active species generated by plasma can be supplied to the inside of the breeding water 4 by using the fish and shellfish production system 1 according to the present embodiment.

[0087] Thus, according to this embodiment, the fish and shellfish production system 1 includes the breeding tank 2 that contains the breeding water 4, the plasma generating unit 12 including the electrode 12a, and the gas flow passage unit 13 through which the process gas Gp supplied to the plasma generating unit 12 flows. The plasma generated by the electrode 12a of the plasma device 10 is a low-temperature plasma. At least one of the plasma and the active gas Ga generated by the plasma is supplied to the breeding tank 2. This allows the active gas Ga containing the active species generated by the plasma to be supplied to the breeding tank 2. As in the conventional technology, when the breeding water is irradiated with plasma in a separation layer separate from the breeding tank in which the fish and shellfish are raised, the active species may be deactivated even before the plasma-treated breeding water reaches the breeding tank from the separation layer. In contrast, according to this embodiment, the deactivation of the active species can be suppressed by supplying the active gas Ga to the breeding tank 2. Therefore, the active species generated by the plasma can be effectively supplied to the fish and shellfish 3 inside the breeding water 4. As a result, the growth of the fish and shellfish 3 can be effectively promoted. Furthermore, according to this embodiment, it is possible to eliminate the need for equipment such as a separation tank for separating a portion of the breeding water, piping for connecting the separation layer and the breeding tank, and a circulation pump for circulating the breeding water between the separation layer and the breeding tank, as in the conventional technology. This makes it possible to suppress an increase in the installation area of ​​the device and an increase in running costs. Thus, according to this embodiment, it is possible to effectively promote the growth of fish and shellfish 3 while suppressing an increase in the installation area of ​​the device and an increase in running costs.

[0088] Furthermore, according to this embodiment, at least one of the plasma and the active gas Ga is supplied directly to the breeding tank 2. That is, according to this embodiment, at least one of the plasma and the active gas is irradiated to the breeding water 4 in the breeding tank 2, or is aerated into the breeding water 4 in the breeding tank 2 (released as air bubbles into the breeding water 4 in the breeding tank 2). According to this embodiment, deactivation of the active species can be more effectively suppressed. Therefore, the active species generated by the plasma can be more effectively supplied to the fish and shellfish 3 inside the breeding water 4. As a result, the growth of the fish and shellfish 3 can be more effectively promoted.

[0089] Furthermore, according to this embodiment, since the plasma generated by the electrode 12a is low-temperature plasma, the temperature of the active gas Ga supplied into the breeding water 4 can also be made low. This makes it possible to suppress an increase in temperature of the breeding water 4. This reduces the impact of an increase in temperature of the breeding water 4 on the fish and shellfish 3. Furthermore, it is possible to reduce the need to cool the breeding water 4 due to an increase in temperature of the breeding water 4.

[0090] According to this embodiment, the seafood production system 1 further includes an irradiation unit 14 downstream of the plasma generation unit 12, which irradiates at least one of the plasma and the active gas Ga, and a gas supply pipe 40 including a first end 41 connected to the irradiation unit 14. At least one of the plasma and the active gas Ga is supplied to the breeding tank 2 from a second end 42 of the gas supply pipe 40 opposite to the first end 41. The second end 42 of the gas supply pipe 40 is located inside the breeding water 4. This allows the active gas Ga containing the active species generated by the plasma to be directly supplied to the inside of the breeding water 4 of the breeding tank 2 through the gas supply pipe 40. In particular, according to this embodiment, the at least one of the plasma and the active gas can be aerated into the breeding water in the breeding tank (released as bubbles into the breeding water in the breeding tank). Therefore, the active species generated by the plasma can be more effectively supplied to the seafood 3 inside the breeding water 4.

[0091] Furthermore, according to this embodiment, at least a part of the inner surface of the gas supply pipe 40 is formed of a non-conductive material. This makes it difficult for the active species to be deactivated in the gas supply pipe 40, and makes it possible to suppress a decrease in the concentration of the active species in the active gas Ga. Therefore, the growth of the fish and shellfish 3 can be promoted more effectively.

[0092] Furthermore, according to this embodiment, the second end 42 of the gas supply pipe 40 is located closer to the bottom 4b than the midpoint 4c between the water surface 4a and the bottom 4b of the breeding water 4. This allows the active gas Ga supplied to the breeding water 4 from the second end 42 to rise within the breeding tank 2 and spread throughout the breeding tank 2. This allows the active species to be supplied to a greater number of fish and shellfish 3. As a result, the growth of the fish and shellfish 3 can be promoted more effectively.

[0093] Furthermore, according to this embodiment, the fish and shellfish production system 1 includes the feeder 44 located above the breeding tank 2, above the second end 42. This makes it possible to more effectively supply active species generated by plasma to the fish and shellfish 3 that gather near the feeder 44 in search of food. As a result, the growth of the fish and shellfish 3 can be more effectively promoted.

[0094] Furthermore, according to this embodiment, the fish and shellfish production system 1 includes an aeration pipe 45 connected to the second end 42 of the gas supply pipe 40 and located inside the breeding water 4. This allows the active gas Ga supplied through the gas supply pipe 40 to be supplied into the breeding water 4 in the form of fine bubbles, and the active gas Ga can be efficiently dissolved in the breeding water 4. This allows the active species generated by the plasma to be more effectively supplied to the fish and shellfish 3 inside the breeding water 4. As a result, the growth of the fish and shellfish 3 can be promoted more effectively.

[0095] Moreover, according to this embodiment, the low-temperature plasma is generated by microwave discharge. Microwave discharge efficiently accelerates electrons and causes them to collide and ionize. This makes it possible to obtain a high electron density while keeping the gas temperature low. By supplying the activated gas Ga containing the activated species thus generated into the breeding water 4, the growth of the fish and shellfish 3 can be promoted more effectively.

[0096] Furthermore, according to this embodiment, the frequency of the power P supplied to the electrode 12a of the plasma device 10 is equal to or higher than 2 GHz and equal to or lower than 3 GHz. By supplying the power P of such a frequency to the electrode 12a, it is possible to generate a low-temperature plasma suitable for promoting the growth of the fishery products 3 by microwave discharge.

[0097] Furthermore, according to this embodiment, the maximum temperature of the active gas Ga irradiated from the irradiation unit 14 of the plasma device 10 is 60° C. or higher and 300° C. or lower. Since the plasma generated by the electrode 12a is a low-temperature plasma, it is possible to generate such a low-temperature active gas Ga. This makes it possible to suppress an increase in the temperature of the breeding water 4.

[0098] According to the present embodiment, the process gas Gp contains oxygen and nitrogen. By using such a process gas Gp, the electrode 12a of the plasma device 10 can generate low-temperature plasma suitable for promoting the growth of the fish and shellfish 3.

[0099] Furthermore, according to this embodiment, by switching the power supply device 30 on and off, the plasma device 10 can switch the fluid supplied to the breeding water 4 between at least one of plasma and active gas Ga and process gas Gp. This allows the plasma device 10 to serve both as a supply of plasma and active gas and as a supply of process gas Gp. This makes it possible to suppress an increase in the number of devices and the installation area in the seafood production system.

[0100] Furthermore, according to this embodiment, the flow rate of the active gas Ga supplied to the breeding water 4 per 1 L of volume is 0.2 L / min or more, and the time for which the active gas Ga is supplied to the breeding water 4 is 20 minutes or more per day. By supplying the active gas Ga to the inside of the breeding water at such a flow rate and for such a supply time, the active species generated by the plasma can be more effectively supplied to the fish and shellfish 3 inside the breeding water 4. As a result, the growth of the fish and shellfish 3 can be promoted more effectively (see Examples).

[0101] Furthermore, according to this embodiment, the amount of active gas Ga supplied to the breeding water 4 per 1 L of volume is 4 L or more per day. By supplying the active gas Ga to the inside of the breeding water 4 at such a supply amount, the active species generated by the plasma can be more effectively supplied to the fish and shellfish 3 inside the breeding water 4. As a result, the growth of the fish and shellfish 3 can be promoted more effectively (see Examples).

[0102] Next, a seafood production system 101 according to a second embodiment will be described mainly with reference to Fig. 3. The second embodiment differs from the first embodiment in that the gas supply pipe 40 is omitted and the plasma device 10 is directly or indirectly connected to the breeding tank 2, but may be configured in the same manner as the first embodiment in other respects. In the following description of the second embodiment and Fig. 3, parts that may be configured in the same manner as the first embodiment described above are designated by the same reference numerals as those used for the corresponding parts in the first embodiment described above, and duplicated explanations will be omitted.

[0103] 3, a seafood production system 101 according to the second embodiment includes a breeding tank 2, a plasma device 10, a gas supply device 20, and a power supply device 30. The breeding tank 2, the plasma generation device 10, the gas supply device 20, and the power supply device 30 in the second embodiment have the same configurations as those in the first embodiment.

[0104] As in the first embodiment, the plasma and active gas generated in the plasma device 10 are emitted from the irradiation port 14a of the plasma device 10. As shown in Fig. 3, the irradiation port 14a of the plasma device 10 communicates with the inside of the breeding tank 2 through a through-hole provided in the side wall of the breeding tank 2. The plasma device 10 may be fixed to the breeding tank 2 so that the irradiation port 14a directly faces the through-hole provided in the side wall of the breeding tank 2.

[0105] As shown in FIG. 3, the seafood production system 101 may further include a valve 50. In the example shown in FIG. 3, the valve 50 is fixed to the plasma device 10 so as to face the irradiation port 14a. The valve 50 is fixed to the plasma device 10 so as to block the irradiation port 14a. In the example shown in FIG. 3, the valve 50 is fixed to the plasma device 10 so as to face a through-hole provided in the side wall of the breeding tank 2. The valve 50 is fixed to the plasma device 10 so as to block the through-hole provided in the side wall of the breeding tank 2. The plasma and active gas generated in the plasma device 10 and released from the irradiation port 14a pass through the valve 50 and are released into the breeding tank 2.

[0106] The valve 50 connects the irradiation unit 14 of the plasma device 10 to the breeding tank 2. At least one of the plasma and the active gas Ga flows through the valve 50. The valve 50 may be a check valve that allows fluid to flow only from the irradiation unit 14 toward the breeding tank 2.

[0107] One end of the valve 50 is connected to the irradiation port 14a of the irradiation unit 14, and the other end of the valve 50 is connected to a through-hole formed in a side wall of the breeding tank 2. The connection position between the valve 50 and the breeding tank 2 is located on the water bottom 4b side of the middle 4c between the water surface 4a and the water bottom 4b of the breeding water 4 in the breeding tank 2. In other words, the connection position between the valve 50 and the breeding tank 2 may be located in the lower half of the breeding water 4. The active gas Ga supplied to the breeding water 4 via the valve 50 rises in the breeding tank 2 and spreads throughout the breeding tank 2.

[0108] The plasma and the active gas Ga are supplied to the breeding tank 2 through the valve 50. That is, the plasma and the active gas Ga are aerated into the breeding water 4 through the valve 50.

[0109] The valve 50 can be opened and closed to control the state of communication between the irradiation unit 14 and the breeding tank 2. As a result, when the active gas Ga is not being irradiated from the irradiation unit 14, the valve 50 can be closed to prevent the breeding water 4 in the breeding tank 2 from flowing from the irradiation unit 14 into the inside of the plasma device 10 via the valve 50. Furthermore, if the valve 50 is a check valve, the breeding water 4 can be prevented from flowing into the plasma device 10 without closing the valve 50.

[0110] Furthermore, when the process gas Gp contains oxygen, the supply of power P from the power supply device 30 may be turned off so that the plasma device 10 does not generate plasma and irradiates the process gas Gp from the irradiation unit 14. In other words, by switching the power supply device 30 on and off, the plasma device 10 may switch the fluid to be supplied into the breeding water 4 between at least one of plasma and active gas Ga, and the process gas Gp.

[0111] The above-described fish and shellfish production system 101 according to the second embodiment includes, as in the first embodiment, a breeding tank 2 that contains breeding water 4, a plasma generating unit 12 including an electrode 12a, and a gas flow passage unit 13 through which a process gas Gp supplied to the plasma generating unit 12 flows. The plasma generated by the electrode 12a is a low-temperature plasma. At least one of the plasma and the active gas Ga generated by the plasma is supplied to the breeding tank 2. This allows the active gas Ga containing the active species generated by the plasma to be directly supplied to the inside of the breeding water 4 in the breeding tank 2. Therefore, it is possible to suppress the deactivation of the active species, and the active species can be effectively supplied to the fish and shellfish 3 inside the breeding water 4. In addition, according to the second embodiment, it is possible to eliminate the need for equipment such as a separation tank for separating a part of the breeding water, a pipe connecting the separation layer and the breeding tank, and a circulation pump for circulating the breeding water between the separation layer and the breeding tank, as in the conventional technology. This makes it possible to suppress an increase in the installation area of ​​the device and an increase in running costs. As described above, according to this embodiment, it is possible to effectively promote the growth of fish and shellfish 3 while suppressing an increase in the installation area of ​​the device and an increase in running costs.

[0112] Furthermore, according to the second embodiment, the connection position between the valve 50 and the breeding tank 2 is located on the water bottom 4b side of the midpoint 4c between the water surface 4a and the water bottom 4b of the breeding water 4 in the breeding tank 2. This allows the active gas Ga supplied to the breeding water 4 via the valve 50 to rise within the breeding tank 2 and become widespread throughout the breeding tank 2. This allows the active species to be supplied to a greater number of fish and shellfish 3. As a result, the growth of the fish and shellfish 3 can be promoted more effectively.

[0113] Furthermore, according to the second embodiment, similarly to the first embodiment, by switching the power supply device 30 on and off, the plasma device 10 can switch the fluid supplied to the breeding water 4 between at least one of plasma and active gas Ga and process gas Gp. This allows the plasma device 10 to serve both as a supply of plasma and active gas and as a supply of process gas Gp. This makes it possible to suppress an increase in the number of devices and the installation area in the seafood production system.

[0114] Next, a seafood production system 201 according to a third embodiment will be described mainly with reference to FIG. 4. The third embodiment differs from the first embodiment in that the second end of the gas supply pipe is connected to the breeding tank 2, but may be configured the same as the first embodiment in other respects. The third embodiment differs from the second embodiment in that a gas supply pipe is provided between the plasma device and the breeding tank, but may be configured the same as the second embodiment in other respects. In the following description of the third embodiment and FIG. 4, the same reference numerals as those used for the corresponding parts in the first and second embodiments described above are used for parts that may be configured in the same way as the first and second embodiments described above, and duplicated explanations will be omitted.

[0115] 4, a seafood production system 201 according to the third embodiment includes a breeding tank 2, a plasma device 10, a gas supply device 20, and a power supply device 30. The breeding tank 2, the plasma generation device 10, the gas supply device 20, and the power supply device 30 in the third embodiment have the same configurations as those in the first and second embodiments.

[0116] A first end 241 of the gas supply pipe 240 is connected to the irradiation unit 14 of the plasma device 10. The first end 241 may be directly connected to the irradiation port 14a of the irradiation unit 14, or may be indirectly connected to the irradiation unit 14 via some attachment member. As long as at least one of the plasma and the active gas Ga irradiated from the irradiation unit 14 flows into the gas supply pipe 40 from the first end 241, the connection method is arbitrary.

[0117] A second end 242 of the gas supply pipe 240 is connected to a through hole formed in a side wall of the breeding tank 2. The second end 242 may be directly connected to an opening in the side of the breeding tank 2, or may be indirectly connected to the breeding tank 2 via some kind of attachment member. As long as at least one of the plasma irradiated from the irradiation unit 14 and the active gas Ga flows from the gas supply pipe 40 into the breeding tank 2, the connection method is arbitrary.

[0118] A valve 250 may be provided at the second end 242 of the gas supply pipe 240. The valve 250 may be a check valve that allows fluid to flow only from the first end 241 side to the second end 242 side.

[0119] The connection position between the second end 242 of the gas supply pipe 240 and the breeding tank 2 may be located on the water bottom 4b side of the midpoint 4c between the water surface 4a and the water bottom 4b of the breeding water 4 in the breeding tank 2. In other words, the connection position between the second end 242 and the breeding tank 2 may be located in the lower half of the breeding water 4. The active gas Ga supplied to the breeding water 4 from the second end 242 of the gas supply pipe 240 rises in the breeding tank 2 and spreads throughout the breeding tank 2.

[0120] The connection position between the valve 250 and the breeding tank 2 may be located closer to the water bottom 4b than the midpoint 4c between the water surface 4a and the water bottom 4b of the breeding water 4 in the breeding tank 2. In other words, the connection position between the valve 250 and the breeding tank 2 may be located in the lower half of the breeding water 4. The active gas Ga supplied to the breeding water 4 from the second end 242 of the gas supply pipe 240 rises in the breeding tank 2 and spreads throughout the breeding tank 2.

[0121] Furthermore, when the process gas Gp contains oxygen, the supply of power P from the power supply device 30 may be turned off so that the plasma device 10 does not generate plasma and irradiates the process gas Gp from the irradiation unit 14. In other words, by switching the power supply device 30 on and off, the plasma device 10 may switch the fluid to be supplied into the breeding water 4 between at least one of plasma and active gas Ga, and the process gas Gp.

[0122] The fish and shellfish production system 201 according to the third embodiment described above includes, as in the first and second embodiments, a breeding tank 2 that contains breeding water 4, a plasma generating unit 12 including an electrode 12a, and a gas flow passage unit 13 through which a process gas Gp supplied to the plasma generating unit 12 flows. The plasma generated by the electrode 12a is a low-temperature plasma. At least one of the plasma and the active gas Ga generated by the plasma is supplied to the breeding tank 2. This allows the active gas Ga containing the active species generated by the plasma to be directly supplied to the inside of the breeding water 4 in the breeding tank 2. Therefore, it is possible to suppress the deactivation of the active species, and the active species can be effectively supplied to the fish and shellfish 3 inside the breeding water 4. In addition, according to the third embodiment, it is possible to eliminate the need for equipment such as a separation tank for separating a part of the breeding water, a pipe connecting the separation layer and the breeding tank, and a circulation pump for circulating the breeding water between the separation layer and the breeding tank, as in the conventional technology. This makes it possible to suppress an increase in the installation area of ​​the device and an increase in running costs. As described above, according to this embodiment, it is possible to effectively promote the growth of fish and shellfish 3 while suppressing an increase in the installation area of ​​the device and an increase in running costs.

[0123] Moreover, according to the third embodiment, at least a part of the inner surface of the gas supply pipe 240 is formed of a non-conductive material. This makes it difficult for the active species to be deactivated, and it is possible to suppress a decrease in the concentration of the active species in the active gas Ga. Therefore, it is possible to more effectively promote the growth of the fish and shellfish 3.

[0124] Furthermore, according to the third embodiment, as in the first embodiment, the connection position between the second end 242 of the gas supply pipe 240 and the breeding tank 2 is located closer to the water bottom 4b than the midpoint between the water surface 4a and the water bottom 4b of the breeding water 4. Alternatively, the connection position between the valve 250 and the breeding tank 2 is located closer to the water bottom 4b than the midpoint between the water surface 4a and the water bottom 4b of the breeding water 4. This allows the active gas Ga supplied to the breeding water 4 from the second end 42 to rise in the breeding tank 2 and be distributed throughout the breeding tank 2. Therefore, the active species can be supplied to a larger number of fish and shellfish 3. As a result, the growth of the fish and shellfish 3 can be promoted more effectively.

[0125] Furthermore, according to the third embodiment, as in the first and second embodiments, by switching the power supply device 30 on and off, the plasma device 10 can switch the fluid supplied to the breeding water 4 between at least one of plasma and active gas Ga and process gas Gp. This allows the plasma device 10 to serve both as a supply of plasma and active gas and as a supply of process gas Gp. This makes it possible to suppress an increase in the number of devices and the installation area in the seafood production system.

[0126] Next, a seafood production system 301 according to a fourth embodiment will be described mainly with reference to Fig. 5. The fourth embodiment differs from the first embodiment in that the gas supply pipe is omitted and the plasma and active gas discharged from the plasma device are irradiated to the breeding water in the breeding tank, but may be otherwise configured in the same manner as the first embodiment. In the following description of the fourth embodiment and Fig. 5, parts that may be configured in the same manner as the first to third embodiments described above are designated by the same reference numerals as those used for the corresponding parts in the first to third embodiments described above, and duplicated explanations will be omitted.

[0127] 5, a seafood production system 301 according to the fourth embodiment includes a breeding tank 2, a plasma device 10, a gas supply device 20, and a power supply device 30. The breeding tank 2, the plasma generation device 10, the gas supply device 20, and the power supply device 30 in the fourth embodiment have the same configurations as those in the first, second, and third embodiments.

[0128] As shown in Fig. 5, the plasma device 10 is disposed above the breeding tank 2. More specifically, the plasma device 10 is disposed so that the irradiation port 14a faces from above the water surface 4a of the breeding water 4 contained in the breeding tank 2. In other words, the plasma device 10 is disposed so that the irradiation port 14a opens vertically downward.

[0129] At least one of the plasma generated in the plasma generating unit 12 and the active gas Ga containing active species generated by the plasma is irradiated from the irradiation unit 14 through the irradiation port 14a toward the water surface 4a of the breeding water 4. At least one of the plasma and the active gas Ga irradiated to the water surface 4a dissolves from the water surface 4a into the breeding water 4.

[0130] The above-described fish and shellfish production system 101 according to the fourth embodiment includes a breeding tank 2 that contains breeding water 4, a plasma generating unit 12 including an electrode 12a, and a gas flow passage unit 13 through which a process gas Gp supplied to the plasma generating unit 12 flows, as in the first, second, and third embodiments. The plasma generated by the electrode 12a is a low-temperature plasma. At least one of the plasma and the active gas Ga generated by the plasma is supplied to the breeding tank 2. This allows the active gas Ga containing the active species generated by the plasma to be directly supplied to the inside of the breeding water 4 in the breeding tank 2. Therefore, it is possible to suppress the deactivation of the active species, and the active species can be effectively supplied to the fish and shellfish 3 inside the breeding water 4. In addition, according to the fourth embodiment, it is possible to eliminate the need for equipment such as a separation tank for separating a part of the breeding water, a pipe connecting the separation layer and the breeding tank, and a circulation pump for circulating the breeding water between the separation layer and the breeding tank, as in the conventional technology. This makes it possible to suppress an increase in the installation area of ​​the device and an increase in running costs. As described above, according to this embodiment, it is possible to effectively promote the growth of fish and shellfish 3 while suppressing an increase in the installation area of ​​the device and an increase in running costs.

[0131] According to the embodiment described above, it is possible to effectively promote the growth of fish and shellfish while suppressing an increase in the installation area of ​​the device and an increase in running costs.

[0132] Although the present disclosure has been described above with reference to a number of embodiments, the above-described embodiments are not intended to limit the present disclosure. The above-described embodiments can be implemented in various other specific examples, and various omissions, substitutions, modifications, and additions can be made without departing from the spirit of the present disclosure. EXAMPLES

[0133] Next, the present disclosure will be described in more detail with reference to examples. However, the present disclosure is not limited to the description of the following examples without departing from the gist of the present disclosure.

[0134] Seafood 3 was produced using the seafood production system 1 described above.

[0135] As the fish and shellfish 3, Nile piratea fish were used. For each comparative example and example, 20 Nile piratea were raised in the rearing water 4 of one rearing tank 2, using three rearing tanks 2, for a total of 60 Nile piratea. The volume of the rearing water 4 in one rearing tank 2 was 50 L. The rearing water 4 was biologically filtered using a filter. The rearing water 4 was heated by a heater, and the temperature of the rearing water 4 was kept at 25 degrees. The lights were turned on for 12 hours and off for 12 hours a day. The Nile piratea were fed with Eel Fry Profit Suiken D1.5 manufactured by Feed One Co., Ltd. The food was 80% of the basic feeding rate, divided twice a day. The rearing period was 77 days.

[0136] The plasma device 10 used was the microwave discharge type plasma device described above. Air containing nitrogen and oxygen was used as the process gas Gp. The output frequency of the power supply device 30 was 2.45 GHz. The output power of the power supply device 30 was 95 W. The inner diameter of the gas supply pipe 40 was 4 mm. The inner layer of the gas supply pipe 40 was made of PVDF, and the outer layer of the gas supply pipe 40 was made of polyurethane. For the gas supply pipe 40, the irradiation section 14 of the plasma device 10 was branched into three, and the first ends 41 of the three gas supply pipes 40 were connected to the irradiation section 14, and the second ends 42 of the three gas supply pipes 40 were positioned inside the breeding water 4 of the three breeding tanks 2, respectively.

[0137] An aeration pipe 45 was connected to each of the second ends 42 of the three gas supply pipes 40. The hole diameter of the aeration pipe 45 was 20 μm. The aeration pipe 45 was made of polypropylene.

[0138] The flow rate of the active gas Ga irradiated from the irradiation section 14 of the plasma device 10 was 30 L / min. As described above, since the irradiation section 14 of the plasma device 10 was branched into three, the flow rate of the active gas Ga supplied to the breeding water 4 in one breeding tank 2 was 10 L / min. Since the volume of the breeding water 4 in one breeding tank 2 was 50 L, the flow rate of the active gas Ga supplied to the breeding water 4 per 1 L of volume was 0.2 L / min. The flow rate of the process gas Gp supplied from the gas supply device 20 to the plasma device 10 was adjusted to adjust the flow rate of the active gas Ga irradiated from the irradiation section 14 of the plasma device 10. More specifically, the flow rate of the process gas Gp supplied from the gas supply device 20 to the plasma device 10 was set to 30 L / min, so that the flow rate of the active gas Ga irradiated from the irradiation section 14 of the plasma device 10 was set to 30 L / min.

[0139] The active gas Ga was supplied to the breeding water 4 during the daytime. The time for supplying the active gas Ga to the breeding water 4 was changed as follows in the comparative example and examples 1 to 3. Comparative example: 0 min / day (no active gas supply) Example 1: 5 minutes / day Example 2: 10 minutes / day Example 3: 20 minutes / day

[0140] As described above, the flow rate of active gas Ga supplied to the breeding water 4 in one breeding tank 2 was 10 L / min, so in Example 1, the amount of active gas Ga supplied to the breeding water 4 in one breeding tank 2 was 50 L per day. In Example 2, the amount of active gas Ga supplied to the breeding water 4 in one breeding tank 2 was 100 L per day. In Example 3, the amount of active gas Ga supplied to the breeding water 4 in one breeding tank 2 was 200 L per day. In the comparative example, the amount of active gas Ga supplied to the breeding water 4 in one breeding tank 2 was 0 L per day.

[0141] As described above, since the volume of the breeding water 4 in one breeding tank 2 was 50 L, in Example 1, the amount of active gas Ga supplied to the breeding water 4 per 1 L of volume was 1 L per day. In Example 2, the amount of active gas Ga supplied to the breeding water 4 per 1 L of volume was 2 L per day. In Example 3, the amount of active gas Ga supplied to the breeding water 4 per 1 L of volume was 4 L per day. Note that in the comparative example, the amount of active gas Ga supplied to the breeding water 4 per 1 L of volume was 0 L per day.

[0142] The experimental results of the comparative example and each example are shown in Figures 6 and 7. Figure 6 is a graph showing the weight gain of Nile pilateas versus the number of days reared in the comparative example and each example. In Figure 6, the horizontal axis shows the number of days reared (days), and the vertical axis shows the amount of weight gain (g). The amount of weight gain refers to the difference in weight between the weight on day 0 and the weight on day 0 as the standard. The amount of weight gain shown in Figure 6 is the average weight gain of 60 Nile pilateas. The weight of each Nile pilatea was measured using a weighing scale every 7 days.

[0143] As shown in FIG. 6, it was confirmed that the weight gain of Nile Pilatia was greater in Examples 1 to 3 than in the Comparative Example. In particular, it was confirmed that the weight gain of Nile Pilatia was significantly greater in Example 3 than in the Comparative Example. In Example 3, the weight gain of Nile Pilatia was greater than that of the Comparative Example during the entire rearing period. The final weight gain of Nile Pilatia after the rearing period (77 days) was about 65.6 g in the Comparative Example, about 68.6 g in Example 1, about 65.8 g in Example 2, and about 78.9 g in Example 3. In Example 3, the final weight gain of Nile Pilatia was about 20% greater than that of the Comparative Example.

[0144] FIG. 7 is a graph showing the weight gain rate of Nile pilatia in the comparative example and each embodiment. In FIG. 4, the vertical axis shows the weight gain rate (% / day). The weight gain rate means the proportion of weight gain per day during the entire rearing period (77 days). For example, if the weight gain rate is 2%, it means that a Nile pilatia weighing 10 g will weigh 10.2 g the next day. The weight gain rate shown in FIG. 7 is the average weight gain rate of 60 Nile pilatia. The error bars in the graph shown in FIG. 7 indicate the standard deviation of the weight gain rate among the three rearing tanks 2.

[0145] As shown in Figure 7, it was confirmed that the weight gain rate of Nile Pilatia was greater in Examples 1 to 3 than in the Comparative Example. In particular, it was confirmed that the weight gain rate of Nile Pilatia was significantly greater in Example 3 than in the Comparative Example. The weight gain rate of Nile Pilatia was about 2.04% / day in the Comparative Example, about 2.09% / day in Example 1, about 2.05% / day in Example 2, and about 2.14% / day in Example 3.

[0146] Thus, according to the present embodiment, it was confirmed that when the active gas Ga was supplied to the inside of the breeding water 4 using the above-mentioned fish and shellfish production system 1 (Examples 1 to 3), the growth of Nile piratea could be effectively promoted. In particular, it was confirmed that the growth of Nile piratea could be promoted even more effectively when the active gas Ga was supplied to the breeding water 4 for 20 minutes or more per day (Example 3). [Explanation of symbols]

[0147] 1. Seafood production system 2. Breeding tank 3. Seafood 4. Water 4a water surface 4b Underwater 4c intermediate 10 Plasma equipment 12 Plasma generating unit 12a electrode 13 Gas flow passage 14 Irradiation unit 40 Gas supply pipe 41 1st end 42 2nd end 44 Feeder 45 Air diffuser 101 Fish and shellfish production systems 201 Seafood Production Systems 240 Gas supply pipe 241 1st end 242 2nd end 301 Seafood Production Systems Ga active gas Gp Process gas P power

Claims

1. A breeding tank for containing breeding water; A plasma generating unit including an electrode; a gas flow passage section through which a process gas supplied to the plasma generating section flows, The plasma generated by the electrodes is a low-temperature plasma; At least one of the plasma and the activated gas generated by the plasma is supplied to the breeding tank.

2. The fish and shellfish production system according to claim 1 , wherein the at least one of the plasma and the active gas is supplied directly to the breeding tank.

3. The fish and shellfish production system according to claim 1 , wherein the at least one of the plasma and the active gas is irradiated or aerated into the breeding water in the breeding tank.

4. The seafood production system according to claim 1 , wherein the low-temperature plasma is generated by microwave discharge.

5. The fish and shellfish production system according to claim 4 , wherein the frequency of the power supplied to the electrodes is equal to or higher than 2 GHz and equal to or lower than 3 GHz.

6. The seafood production system of claim 1 , wherein the low-temperature plasma is generated by dielectric barrier discharge.

7. The seafood production system of claim 1 , wherein the process gas comprises oxygen and nitrogen.

8. 2. The seafood production system of claim 1, wherein the flow rate of the active gas supplied to the breeding water per 1 L of volume is 0.2 L / min or more, and the supply time of the active gas to the breeding water is 20 minutes or more per day.

9. 2. The fish and shellfish production system according to claim 1, wherein the amount of the active gas supplied to the breeding water per liter of volume is 4 liters or more per day.

10. an irradiation unit that is located downstream of the plasma generating unit and that irradiates at least one of the plasma and the active gas; a gas supply pipe including a first end connected to the irradiation unit; At least one of the plasma and the active gas is supplied to the breeding tank from a second end of the gas supply pipe opposite to the first end, The fish and shellfish production system of claim 1 , wherein the second end of the gas supply pipe is located inside the breeding water or is connected to a side wall of the breeding tank.

11. The seafood production system of claim 10 , wherein at least a portion of the inner surface of the gas supply pipe is formed from a non-conductive material.

12. The fish and shellfish production system according to claim 10 , wherein the second end of the gas supply pipe is located closer to the bottom of the rearing water than a midpoint between a surface of the rearing water and a bottom of the rearing water.

13. The fish and shellfish production system according to claim 10 , further comprising an aeration pipe connected to the second end of the gas supply pipe and positioned within the rearing water.

14. The fish and shellfish production system according to claim 10 , wherein a maximum temperature of the active gas irradiated from the irradiation unit is 60° C. or higher and 300° C. or lower.

15. A method for producing seafood using the seafood production system according to any one of claims 1 to 14, a plasma generating step of generating the plasma by the electrode; supplying at least one of the plasma and an activated gas generated by the plasma to the breeding tank.

Citation Information

Patent Citations

  • Production procedure of pisces

    JP2018201415A

Cited By

  • Solution preparation method in temporary culture process of eriocheir sinensis and application of solution preparation method

    CN120770342A