Heat-dissipating die-bonding film

Abstract

To provide a heat-dissipating die-bonding film that can exhibit sufficient heat dissipation properties and is excellent in followability to irregularities formed on a surface of an adherend, and that is also excellent in appearance.SOLUTION: A heat-dissipating die-bonding film comprises a resin composition that contains, as a resin component, a thermosetting resin and a thermoplastic resin, and also contains, as thermally conductive fillers, alumina fillers. The alumina fillers include first alumina fillers with an average particle size of 0.8 μm or more and 2.6 μm or less. The resin composition includes 24 mass% or more of the first alumina fillers based on total 100 mass% of the thermosetting resin, the thermoplastic resin, and the alumina fillers, and has a thermal conductivity of 1.4 W / (m K) or more.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a heat dissipating die bond film. More specifically, the present invention relates to a heat dissipating die bond film that exhibits heat dissipation properties by containing a thermally conductive filler. [Background technology]

[0002] BACKGROUND ART It has been known to use a die bond film to adhere (die bond) a semiconductor chip (die) to an adherend such as a substrate or a lead frame (for example, Patent Document 1 below). That is, it is known to adhere (die-bond) the semiconductor chip to the adherend with the die-bond film interposed therebetween.

[0003] In recent years, in semiconductor devices equipped with semiconductor chips, the operating speed has been improved, and three-dimensional integration has been implemented in which multiple semiconductor chips are stacked in the height direction in order to increase the density of the semiconductor device. As described above, when the operating speed of the semiconductor device is improved or three-dimensional integration is implemented, the amount of heat generated during operation of the semiconductor device increases. When the amount of heat generated increases, the amount of heat stored inside the semiconductor device also increases, causing the temperature inside the semiconductor device to rise. If the temperature inside the semiconductor device rises in this way and exceeds the maximum junction temperature (e.g., 150°C) of the semiconductor chip provided in the semiconductor device, there is a concern that the semiconductor chip will no longer function normally, causing the semiconductor device to malfunction. Therefore, it is desirable to make the semiconductor device excellent in heat dissipation.

[0004] In order to address the problem of heat dissipation in such semiconductor devices, Patent Document 1 below describes that the die bond film contains a thermoplastic resin and a thermosetting resin as organic resin components, and also contains a thermally conductive filler having a thermal conductivity of 12 W / m·K or more, and further describes that the content of the thermally conductive filler relative to the total of the organic resin components and the thermally conductive filler is set within a predetermined range. That is, Patent Document 1 below describes that the die bond film is a heat dissipating die bond film containing a thermally conductive filler. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-23607 Summary of the Invention [Problem to be solved by the invention]

[0006] As described above, Patent Document 1 describes that the die bond film is configured as a heat dissipation die bond film to address the problem of heat dissipation. However, in the semiconductor device, further improvements in operation speed and further increases in density are expected in the future, and therefore further improvements in heat dissipation are desired for the heat dissipation die bond film.

[0007] The substrate also includes a base body made of resin or the like, and a plurality of electrodes provided on the surface of the base body. More specifically, the substrate is provided with the plurality of electrode portions so as to protrude from the surface of the base body. Therefore, the surface of the base body is uneven due to the plurality of protruding electrode portions. Then, the die bond film is adhered (die-bonded) to the base body from the other surface side so as to embed each of the plurality of electrode portions, with the semiconductor chip attached to one surface. Therefore, although it is preferable that the die bond film has a property of excellent conformability to irregularities, it is difficult to say that sufficient research has been carried out on this point. In particular, it is difficult to say that sufficient research has been carried out yet on how to make a heat dissipating die bond film containing a thermally conductive filler have excellent properties of conforming to irregularities.

[0008] Furthermore, when the die bond film is configured as a heat dissipating die bond film, the heat dissipating die bond film usually contains the thermally conductive filler as explained above. Therefore, the thermally conductive filler becomes clearly visible in the heat dissipating die bond film, and the heat dissipating die bond film may become inferior in appearance (poor in design). However, it is difficult to say that sufficient studies have been made yet to prevent the die bond film from having poor appearance (poor design).

[0009] In other words, it cannot be said that sufficient research has yet been conducted on heat-dissipating die-bond films that can simultaneously exhibit the properties of sufficient heat dissipation, excellent conformability to irregularities formed on the surface of an adherend, and excellent appearance.

[0010] Therefore, an object of the present invention is to provide a heat-dissipating die-bonding film that can exhibit sufficient heat dissipation, has excellent conformability to irregularities formed on the surface of an adherend, and has excellent appearance. [Means for solving the problem]

[0011] As a result of intensive research, the present inventors have found that in a heat dissipation die bond film composed of a resin composition containing a thermosetting resin and a thermoplastic resin as resin components and containing an alumina filler as a thermally conductive filler, the above three properties can be exhibited by using a first alumina filler having an average particle size of 0.8 μm or more and 2.6 μm or less as the alumina filler, and by configuring the resin composition to contain 24 mass% or more of the first alumina filler relative to a total of 100 mass% of the thermosetting resin, the thermoplastic resin, and the alumina filler, and by configuring the resin composition to exhibit a thermal conductivity of 1.4 W / (m·K) or more. As a result, the present invention was conceived.

[0012] That is, the heat dissipation die bond film according to the present invention is A heat dissipation die bond film made of a resin composition containing a thermosetting resin and a thermoplastic resin as resin components and containing an alumina filler as a thermally conductive filler, The alumina filler includes a first alumina filler having an average particle size of 0.8 μm or more and 2.6 μm or less, the resin composition contains 24% by mass or more of the first alumina filler relative to 100% by mass of the total of the thermosetting resin, the thermoplastic resin, and the alumina filler; Thermal conductivity is 1.4 W / (m·K) or more. [Effects of the Invention]

[0013] According to the present invention, it is possible to provide a heat-dissipating die-bonding film that can exhibit sufficient heat dissipation properties, has excellent conformability to irregularities formed on the surface of an adherend, and has excellent appearance. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a perspective view showing a configuration of a heat dissipation die bond film according to one embodiment of the present invention. [Figure 2]FIG. 1 is a cross-sectional view for explaining an example of use of a heat dissipation die bond film according to one embodiment of the present invention. [Figure 3] 1 is a cross-sectional view showing the configuration of a dicing die bond film provided with a heat dissipation die bond film according to one embodiment of the present invention. [Figure 4A] 1A and 1B are cross-sectional views schematically showing half-cut processing in a method for manufacturing a semiconductor integrated circuit. [Figure 4B] 1A and 1B are cross-sectional views schematically showing half-cut processing in a method for manufacturing a semiconductor integrated circuit. [Figure 4C] 1A and 1B are cross-sectional views schematically showing back grinding in a method for manufacturing a semiconductor integrated circuit. [Figure 4D] 1A and 1B are cross-sectional views schematically showing back grinding in a method for manufacturing a semiconductor integrated circuit. [Figure 5A] 1A to 1C are cross-sectional views schematically showing a mounting step in a method for manufacturing a semiconductor integrated circuit. [Figure 5B] 1A to 1C are cross-sectional views schematically showing a mounting step in a method for manufacturing a semiconductor integrated circuit. [Figure 6A] 1A and 1B are cross-sectional views schematically illustrating a low-temperature expanding step in a method for manufacturing a semiconductor integrated circuit. [Figure 6B] 1A and 1B are cross-sectional views schematically illustrating a low-temperature expanding step in a method for manufacturing a semiconductor integrated circuit. [Figure 6C] 1A and 1B are cross-sectional views schematically illustrating a low-temperature expanding step in a method for manufacturing a semiconductor integrated circuit. [Figure 7A] 1A and 1B are cross-sectional views schematically illustrating an expanding step at room temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 7B] 1A and 1B are cross-sectional views schematically illustrating an expanding step at room temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 8] 10A and 10B are cross-sectional views schematically showing a kerf maintaining step in the method for manufacturing a semiconductor integrated circuit. [Figure 9] 1A to 1C are cross-sectional views schematically showing a pickup step in a method for manufacturing a semiconductor integrated circuit. DETAILED DESCRIPTION OF THE INVENTION

[0015] An embodiment of the present invention will be described below.

[0016] [Heat dissipative die bond film] As shown in FIG. 1, the heat dissipating die bond film 10 according to this embodiment contains a thermosetting resin and a thermoplastic resin as resin components, and also contains an alumina filler as a thermally conductive filler. In FIG. 1, only a first alumina filler 10a (described later) is shown as the alumina filler. In the heat dissipating die-bonding film 10 according to this embodiment, the alumina filler contains first alumina filler 10a having an average particle diameter of 0.8 μm or more and 2.6 μm or less. In the heat dissipation die bond film 10 according to this embodiment, the resin composition contains 24% by mass or more of the first alumina filler 10a relative to a total of 100% by mass of the thermosetting resin, the thermoplastic resin, and the alumina filler. The heat dissipative die bond film 10 according to this embodiment has a thermal conductivity of 1.4 W / (m·K) or more. The heat dissipative die-bonding film 10 according to this embodiment is usually in the form of a long strip and is stored in a state where it is rolled up into a cylindrical shape, that is, in the state where it is made into a roll body. The heat dissipating die bond film 10 according to this embodiment is used to adhere (die bond) a semiconductor chip (die) 20 onto an adherend 30 such as a substrate or a lead frame, as shown in FIG. Specifically, the heat dissipating die bond film 10 according to this embodiment is used by adhering the other surface 10B onto the adherend 30 in a state where the semiconductor chip 20 is attached to one surface 10A.

[0017] As described above, the heat dissipation die bond film 10 according to this embodiment contains the first alumina filler 10a having an average particle diameter of 0.8 μm or more and 2.6 μm in a mass ratio of 24 mass % or more, and exhibits a high thermal conductivity of 1.4 W / (m·K) or more. Here, if most of the alumina filler contained in the heat-dissipating die-bond film (for example, 80 mass% or more by mass ratio) has a small particle diameter, such as an average particle diameter of less than 0.8 μm, the alumina filler can be made sufficiently difficult to see in the heat-dissipating die-bond film, but there is a concern that the melt viscosity of the heat-dissipating die-bond film will increase, reducing the ability of the heat-dissipating die-bond film to embed irregularities formed on the surface of the adherend. However, as described above, the first alumina filler 10a has a moderate average particle diameter of 0.8 μm or more and 2.6 μm or less, so even if it is contained in the heat dissipation die bond film 10 at a mass ratio of 24 mass% or more as described above, the melt viscosity of the heat dissipation die bond film 10 can be prevented from increasing excessively. This makes it easy for the heat dissipating die bond film 10 according to this embodiment to sufficiently fill in the irregularities formed on the surface of the adherend. Moreover, since the melt viscosity of the heat dissipative die bond film 10 can be set to an appropriate value, the shape retention of the heat dissipative die bond film 10 as a film is sufficiently ensured. Furthermore, since the alumina filler contains the first alumina filler 10a having the above average particle size in the above mass ratio, the surface area of ​​the alumina filler as a whole can be made sufficiently large. As a result, the heat dissipative die bond film 10 exhibits a high thermal conductivity of 1.4 W / (m·K) or more, and can therefore exhibit sufficient heat dissipation properties when used in a semiconductor device. Furthermore, as described above, since the heat dissipating die bond film 10 contains the first alumina filler 10a in the mass ratio described above, when the heat dissipating die bond film 10 is visually observed, the alumina filler is difficult to clearly see. This makes the heat dissipative die bond film 10 excellent in appearance (excellent in design).

[0018] The thermal conductivity of the heat dissipative die bond film 10 can be calculated using the following formula (1). Thermal conductivity = thermal diffusivity × specific heat × specific gravity (1) The unit of thermal conductivity is W / (m K), and the unit of thermal diffusivity is m 2 / s, the unit of specific heat is J / (g·℃), and the unit of specific gravity is g / cm 3 is.

[0019] The specific heat and the specific gravity can be determined using a first test piece of the heat dissipating die bond film 10 having predetermined dimensions (thickness 0.5 mm, plane dimensions 10 mm×10 mm (10 mm square)). The first test piece can be obtained according to the following procedure. (1) A plurality of heat dissipating die bond films 10 are laminated to a thickness of 0.5 mm to obtain a laminate. (2) In a pressure oven, the laminate is subjected to a pressure of 7 kg / m 2 The first heating step involves heating the mixture at a temperature of 120°C for 1 hour, and then the second heating step involves heating the mixture at a temperature of 175°C for 1 hour. (3) After the second heat treatment, the laminate is cut into 10 mm squares to obtain first test pieces.

[0020] The specific heat can be measured by a DSC method. The specific heat measurement is performed using a DSC6220 manufactured by SII Nano Technology Inc. under conditions of a temperature rise rate of 10°C / min and a temperature range of 20 to 300°C. Then, based on the data obtained by the DSC method, the specific heat is calculated by the method described in the JIS Handbook (specific heat capacity measurement method K-7123). The specific gravity can be measured using an electronic densitometer (manufactured by Alpha Mirage under the trade name "MDS-300").

[0021] The thermal diffusivity can be determined using a second test piece obtained by spraying Blackguard spray onto the surface (surface to be measured) of the first test piece (the laminate cut into 10 mm squares). Specifically, the thermal diffusivity of the second test piece is measured using a xenon flash analyzer (model "LFA447" manufactured by NETZSCH) as a measuring device.

[0022] The thermal conductivity of the heat dissipative die bond film 10 may be 1.6 W / (m·K) or more, or may be 1.8 W / (m·K) or more. The upper limit of the thermal conductivity is usually 10 W / (m·K).

[0023] Examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. Among these, it is preferable to use at least one of the epoxy resin and the phenol resin as the thermosetting resin, and it is more preferable to use both the epoxy resin and the phenol resin.

[0024] Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin, and glycidylamine type epoxy resin.

[0025] Examples of the phenolic resin include novolac type phenolic resins, resol type phenolic resins, and polyoxystyrenes such as polyparaoxystyrene. When the phenolic resin is used in combination with the epoxy resin, the phenolic resin also functions as a curing agent for the epoxy resin.

[0026] When the epoxy resin and the phenol resin are used in combination, the mass ratio of the epoxy resin relative to 100 mass% of the epoxy resin and the phenol resin is preferably 10 mass% or more, more preferably 30 mass% or more, and even more preferably 45 mass% or more. The mass ratio of the epoxy resin may be 90 mass % or less, 70 mass % or less, or 55 mass % or less.

[0027] The heat dissipating die bond film 10 according to this embodiment may contain a thermosetting catalyst (curing accelerator) from the viewpoint of sufficiently promoting the curing reaction of the thermosetting resin and increasing the curing reaction rate. Examples of the heat curing catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogenborane-based compounds.

[0028] The resin composition for constituting the heat dissipating die-bonding film 10 according to this embodiment may contain a silane coupling agent. By including the silane coupling agent, the affinity between the alumina filler and the resin component can be increased, and therefore the alumina filler can be sufficiently dispersed in the resin composition. The silane coupling agent is preferably a compound that does not have a double bond in its structure. Examples of silane coupling agents that do not have a double bond in their structure include 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane (a commercially available product manufactured by Shin-Etsu Silicones under the trade name "KBM-303"), 3-glycidoxypropylmethyldimethoxysilane (a commercially available product manufactured by Shin-Etsu Silicones under the trade name "KBM-402"), 3-glycidoxypropyltrimethoxysilane (a commercially available product manufactured by Shin-Etsu Silicones under the trade name "KBM-403"), 3-glycidoxypropylmethyldiethoxysilane (a commercially available product manufactured by Shin-Etsu Silicones under the trade name "KBE-402"), 3-glycidoxypropyltrieth ... Examples of such a product include N-2-(aminoethyl)-3-aminopropyltrimethoxysilane (a commercially available product manufactured by Shin-Etsu Silicones under the trade name "KBM-403"), N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane (a commercially available product manufactured by Shin-Etsu Silicones under the trade name "KBM-602"), N-2-(aminoethyl)-3-aminopropyltrimethoxysilane (a commercially available product manufactured by Shin-Etsu Silicones under the trade name "KBM-603"), 3-aminopropyltrimethoxysilane (a commercially available product manufactured by Shin-Etsu Silicones under the trade name "KBM-903"), and 3-aminopropyltriethoxysilane (a commercially available product manufactured by Shin-Etsu Silicones under the trade name "KBE-303"). When a compound having a double bond in its structure is used as the silane coupling agent, a strong bond is formed between the adhesive layer 2 and the heat dissipation die bond film 10 in the dicing die bond film 50 described below. However, when a compound having no double bond in its structure is used as the silane coupling agent, the formation of such a strong bond can be suppressed. This makes it possible to easily pick up the heat dissipating die bond film 10 with the semiconductor chip (die) attached from the pressure-sensitive adhesive layer 2 in the pick-up step described below.

[0029] The thermoplastic resin functions as a binder. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as polyamide 6 and polyamide 6,6, phenoxy resin, acrylic polymer, saturated polyester resin such as PET and PBT, polyamide-imide resin, and fluororesin. The thermoplastic resins may be used singly or in combination of two or more. As the thermoplastic resin, an acrylic polymer is preferred from the viewpoint that it contains little ionic impurities and has high heat resistance, and therefore connection reliability by the die bond layer can be easily ensured.

[0030] The acrylic polymer is preferably a polymer containing a monomer unit derived from a (meth)acrylic acid ester as the monomer unit with the largest mass proportion. Examples of the (meth)acrylic acid ester include (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, and (meth)acrylic acid aryl ester. The acrylic polymer may contain monomer units derived from other components copolymerizable with (meth)acrylic acid esters, such as functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamides, and acrylonitriles, as well as various polyfunctional monomers. In the heat dissipating die bond film 10 according to this embodiment, the acrylic polymer is preferably a copolymer of acrylic acid (AA), acrylonitrile (AN), butyl acrylate (BA), and ethyl acrylate (EA).

[0031] The acrylic polymer preferably has a mass average molecular weight Mw of 400,000 or less and has a functional group capable of reacting with at least one of the epoxy resin and the phenol resin.

[0032] The mass average molecular weight Mw of the acrylic polymer is preferably 300,000 or less, more preferably 200,000 or less, and even more preferably 160,000 or less. The mass average molecular weight Mw of the acrylic polymer is preferably 20,000 or more, and more preferably 40,000 or more.

[0033] The mass average molecular weight Mw of the acrylic polymer can be measured by GPC under the following conditions. Measurement equipment: Waster, model "Alliance GPC 2000" Column: Two TSKgel GMH6-HT (Tosoh Corporation) columns connected in series, with two TSKgel GMH-HTL columns connected in series downstream. Column size: 7.5mm inner diameter x 300mm length for both TSKgel GMH6-HT and TSKgel GMH-HTL Column temperature: 140℃ ·Flow rate: 1.0mL / min Eluent: o-dichlorobenzene Sample preparation concentration: 0.10% by mass (dissolved in o-dichlorobenzene) Sample injection volume: 40 μL Detector: RI (differential refractometer) Standard sample: Polystyrene

[0034] The functional group of the acrylic polymer may be, for example, a carboxy group. The carboxy group is a functional group that can react with the glycidyl group (epoxy group) of the epoxy resin, and is also a functional group that can react with the hydroxyl group of the phenol resin. That is, the carboxy group is a functional group capable of reacting with the epoxy resin and the phenol resin. The functional group of the acrylic polymer also includes a glycidyl group. The glycidyl group is a functional group that can react with the glycidyl group (epoxy group) of the epoxy resin, and is also a functional group that can react with the hydroxyl group of the phenol resin. That is, the glycidyl group is also a functional group capable of reacting with the epoxy resin and the phenol resin. In this specification, the functional group capable of reacting with at least one of the epoxy resin and the phenol resin means the carboxy group and the glycidyl group.

[0035] The heat dissipative die bond film 10 preferably has a melt viscosity measured at a temperature of 120° C. of 2500 Pa·s or less. The melt viscosity value may be 2400 Pa·s or less, 2200 Pa·s or less, 2000 Pa·s or less, 1500 Pa·s or less, or 1100 Pa·s or less. The melt viscosity may be 500 Pa·s or more, 700 Pa·s or more, or 900 Pa·s or more. When the melt viscosity value is within the above-mentioned range, the heat dissipating die-bonding film 10 can sufficiently maintain the sheet shape and can easily dissolve the unevenness formed on the surface of the adherend. This provides superior conformability to irregularities (for example, irregularities formed by a plurality of electrode portions protruding from the surface of the base body, as explained above).

[0036] The melt viscosity of the heat dissipative die-bonding film 10 can be measured by a parallel plate method using a rheometer (manufactured by Thermo Fisher Scientific, trade name "MARSIII"). Specifically, the heat dissipative die-bonding film 10 is placed on a plate heated to 120° C., and the measurement is started, and the average value of the values ​​240 seconds after the start of the measurement is taken as the melt viscosity. The gap between the plates is 0.1 mm.

[0037] The resin composition preferably contains the acrylic polymer in an amount of 3% by mass or more and 80% by mass or less relative to 100% by mass of the thermosetting resin and the thermoplastic resin combined. The resin composition may contain the acrylic polymer in an amount of 5% by mass or more, 10% by mass or more, or 20% by mass or more, relative to 100% by mass of the total of the thermosetting resin and the thermoplastic resin. Furthermore, the resin composition may contain the acrylic polymer in an amount of 70% by mass or less, 60% by mass or less, or 50% by mass or less, relative to 100% by mass of the total of the thermosetting resin and the thermoplastic resin.

[0038] In the heat dissipation die bond film 10 according to this embodiment, the alumina filler preferably contains first alumina filler 10a having an average particle diameter of 1.0 μm or more, more preferably contains first alumina filler 10a having an average particle diameter of 1.2 μm or more, and even more preferably contains first alumina filler 10a having an average particle diameter of 1.5 μm or more. Furthermore, in the heat dissipation die bond film 10 according to this embodiment, the alumina filler preferably contains first alumina filler 10a having an average particle diameter of 2.5 μm or less, more preferably contains first alumina filler 10a having an average particle diameter of 2.4 μm or less, and even more preferably contains first alumina filler 10a having an average particle diameter of 2.2 μm or less.

[0039] The average particle size of the first alumina filler 10a can be measured by dynamic light scattering (DLS). Specifically, a sample for particle size measurement is prepared by dispersing the first alumina filler 10a in methyl ethyl ketone (MEK) so that the solid content concentration is 1% by mass or less, and the average particle size of the first alumina filler 10a in the sample for particle size measurement is measured using a dynamic light scattering photometer (model number "ZEN3600": manufactured by CIMEX Corporation). The sample for particle size measurement may be treated with an ultrasonic homogenizer for 2 minutes before measurement.

[0040] The first alumina filler 10a is 0.5 m 2 / g or more 6.0m 2 It is preferable that the specific surface area is 1 / g or less. The specific surface area is 0.8 m 2 / g or more, and 1.0m 2 / g or more, and 1.2m 2 / g or more. The specific surface area is 5.0 m 2 / g or less, or 3.0m 2 / g or less, or 2.0m 2 / g or less, or 1.5m 2 / g or less. The specific surface area is calculated by the BET method in accordance with JIS Z8830: 2013. Specifically, a measurement sample (first alumina filler 10a) is placed in a measurement cell, and the measurement cell is heat-treated at 200°C for 30 minutes. The specific surface area is calculated from the amount of nitrogen desorbed during the heat treatment. After the measurement cell is heated, it is cooled with liquid nitrogen.

[0041] The first alumina filler 10a may have a polyhedral shape made up of six or more flat faces, or may have a polyhedral shape made up of eight or more flat faces. Since the first alumina filler 10a has a polyhedral shape, the first alumina fillers 10a can be in surface contact with each other. This makes it possible to increase the contact area between the first alumina fillers 10a compared to when spherical first alumina fillers 10a are used, for example. As a result, a good heat dissipation path can be formed in the heat dissipation die bond film 10. Note that the first alumina filler 10a shown in Fig. 1 has a hexagonal structure. That is, the first alumina filler 10a shown in Fig. 1 is composed of eight planes.

[0042] Commercially available products of the first alumina filler 10a having the polyhedral shape include the Sumicorundum (registered trademark) series manufactured by Sumitomo Chemical Co., Ltd. Examples of the Sumicorundum (registered trademark) series include products under the trade names "Sumicorundum AA-07," "Sumicorundum AA-1.5," and "Sumicorundum AA-2."

[0043] In the heat dissipating die bond film 10 according to this embodiment, the alumina filler may contain a second alumina filler having an average particle size different from that of the first alumina filler 10a. As described above, when the alumina filler contains the first alumina filler 10a and the second alumina filler, the particle size distribution curve representing the volume-based frequency of the alumina filler may have a first peak top corresponding to the first alumina filler 10a and a second peak top corresponding to the second alumina filler. In addition, in the particle size distribution curve, the first peak top may be located on the larger particle diameter side than the second peak top. As described above, when the alumina filler contains the second alumina filler in addition to the first alumina filler 10a, the second alumina filler having a small particle size can be interposed between the first alumina fillers 10a having a large particle size. This can further increase the contact area between the alumina fillers in the heat dissipating die bond film 10. As a result, a good heat dissipation path can be formed in the heat dissipating die bond film 10.

[0044] The average particle size of the second alumina filler is preferably 0.7 μm or less, and more preferably 0.5 μm or less. The average particle size of the second alumina filler may be 0.01 μm or more, 0.05 μm or more, 0.1 μm or more, or 0.2 μm or more. The average particle size of the second alumina filler can be measured in the same manner as that of the first alumina filler 10a.

[0045] As described above, when the first alumina filler 10a has a polyhedral shape, it is preferable that the second alumina filler also has a polyhedral shape. In such a case, the first alumina filler 10a and the second alumina filler can be brought into surface contact with each other, so that a better heat dissipation path can be formed in the heat dissipation die bond film 10. Furthermore, since the second alumina filler has a polyhedral shape, the second alumina fillers can also be in surface contact with each other. A commercially available product of the second alumina filler having a polyhedral shape is "Sumicorundum AA-03" manufactured by Sumitomo Chemical Co., Ltd. In addition, when a spherical alumina filler is used as the second alumina filler, the melt viscosity of the heat dissipating die bond film 10 can be reduced, thereby improving the adhesiveness of the heat dissipating die bond film 10. An example of the second alumina filler having a spherical shape is "AO-502" manufactured by Admatechs Co., Ltd. When the second alumina filler has a spherical shape, the second alumina filler may be surface-treated. The surface treatment can be carried out using a surface treatment agent such as a silane coupling agent. By subjecting the second alumina filler to a surface treatment with a surface treatment agent such as a silane coupling agent, the affinity of the second alumina filler with the thermosetting resin and thermoplastic resin can be increased. This makes it easier to disperse the second alumina filler more thoroughly in the resin composition. Examples of the silane coupling agent include "KBM-403" (a silane coupling agent having an epoxy group) manufactured by Shin-Etsu Chemical Co., Ltd., and "KBM-503" (a silane coupling agent having a methacrylic group) manufactured by Shin-Etsu Chemical Co., Ltd.

[0046] When the alumina filler contains both the first alumina filler 10a and the second alumina filler, the content of the first alumina filler 10a is preferably higher than the content of the second alumina filler. The content C1 of the first alumina filler 10a and the content C2 of the second alumina filler preferably satisfy the relationship C1:C2 = 9:1 to 1:9, more preferably satisfy the relationship 7:3 to 3:7, and even more preferably satisfy the relationship 7:3 to 5:5. By satisfying the above relationship, the second alumina filler can be more suitably interposed between the first alumina fillers 10a. This makes it possible to form a better heat dissipation path in the heat dissipation die bond film 10.

[0047] The resin composition may contain 40% by mass or more of the first alumina filler 10a, relative to a total of 100% by mass of the thermosetting resin, the thermoplastic resin, and the first alumina filler 10a, or may contain 40% by mass or more, 50% by mass or more, 60% by mass or more, 70% by mass or more, or 80% by mass or more. Furthermore, the resin composition may contain 82% by mass or more, or 84% by mass or more, of the first alumina filler 10a relative to a total of 100% by mass of the thermosetting resin, the thermoplastic resin, and the first alumina filler 10a. The resin composition may contain 95% by mass or less of the first alumina filler 10a, 92% by mass or less, 90% by mass or less, 88% by mass or less, or 86% by mass or less, relative to a total of 100% by mass of the thermosetting resin, the thermoplastic resin, and the first alumina filler 10a.

[0048] The thickness of the heat dissipating die bond film 10 is not particularly limited, but is, for example, 1 μm or more and 200 μm or less. Such a thickness may be 3 μm or more and 150 μm or less, or 5 μm or more and 100 μm or less. The thickness of the heat dissipating die bond film 10 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[0049] The heat dissipative die bond film 10 according to this embodiment preferably has a breaking elongation at -15°C of 10% or less. The breaking elongation is more preferably 8% or less, and even more preferably 5% or less. When the breaking elongation of the heat dissipative die bond film 10 is within the above range, the heat dissipative die bond film 10 has an appropriate hardness. Therefore, as described below, by preparing the dicing die bond film 50 and then expanding the dicing die bond film 50, the semiconductor wafer bonded to the heat dissipation die bond film 10 can be cut into multiple semiconductor chips more efficiently.

[0050] The heat dissipating die-bonding film 10 can be obtained by dissolving and suspending a resin composition containing the above-mentioned components in an organic solvent (e.g., methyl ethyl ketone (MEK)) to obtain an adhesive composition, applying the adhesive composition to the surface of a resin film or the like using an applicator or the like, and then drying the applied adhesive composition. The resin film is preferably a release film (release liner) having one surface subjected to a release treatment, and when a release film is used as the resin film, it is preferable to apply the adhesive composition to the release-treated surface.

[0051] [Dicing die bond film] The dicing die bond film 50 of this embodiment comprises a dicing tape 40 having an adhesive layer 2 laminated on a base layer 1, and a heat dissipation die bond film 10 laminated on the adhesive layer 2 with a portion of the adhesive layer 2 exposed. In the dicing die bond film 50 according to this embodiment, the heat dissipation die bond film 10 according to this embodiment is used as the heat dissipation die bond film 10. In the dicing die bond film 50, a semiconductor wafer is attached onto the heat dissipation die bond film 10. When a semiconductor wafer is cleaved using the dicing die bond film 50, the heat dissipation die bond film 10 is also cleaved together with the semiconductor wafer. As shown in Fig. 2, the heat dissipation die bond film 10 is cleaved into pieces of size corresponding to the size of the individual semiconductor chips. In this way, semiconductor chips with the heat dissipation die bond film 10 can be obtained.

[0052] The base layer 1 supports the pressure-sensitive adhesive layer 2 . The base layer 1 is made of a metal foil, a fiber sheet, a rubber sheet, a resin film, or the like.

[0053] The base layer 1 is preferably made of a resin film. The substrate layer 1 may have a single layer structure or a laminated structure.

[0054] The fiber sheet may be made of paper, woven fabric, or nonwoven fabric.

[0055] Examples of materials for resin films include polyolefins such as polyethylene, polypropylene, and ethylene-propylene copolymers; ethylene copolymers such as ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester random copolymers, and ethylene-(meth)acrylic acid ester alternating copolymers; polyesters such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; polyacrylates; polyvinyl chloride (PVC); polyurethanes; polycarbonates; polyphenylene sulfide; polyamides such as aliphatic polyamides and fully aromatic polyamides (aramids); polyether ether ketones; polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile-butadiene-styrene copolymers); cellulose or cellulose derivatives; silicone-containing polymers; and fluorine-containing polymers. These may be used alone or in combination of two or more.

[0056] When the base layer 1 is made of a resin film, the base layer 1 may be obtained by non-stretch molding or by stretch molding, but is preferably obtained by stretch molding.

[0057] The surface of the base layer 1 on which the pressure-sensitive adhesive layer 2 is laminated (hereinafter simply referred to as the surface) may be subjected to a surface treatment in order to enhance adhesion to the pressure-sensitive adhesive layer 2. The surface treatment may be a chemical or physical oxidation treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage shock exposure, or ionizing radiation treatment. Furthermore, as a surface treatment, coating treatment using a coating agent such as an anchor coating agent, a primer, or an adhesive may be performed.

[0058] The surface of the base material layer 1 on which the adhesive layer 2 is not laminated (hereinafter simply referred to as the back surface) may be coated with a release agent (release agent) such as a silicone resin or a fluororesin to improve releasability.

[0059] The thickness of the base layer 1 is preferably 55 μm or more and 195 μm or less, more preferably 55 μm or more and 190 μm or less, even more preferably 55 μm or more and 170 μm or less, and optimally 60 μm or more and 160 μm or less. By setting the thickness of the base layer 1 within this range, the dicing tape 40 can be produced efficiently. Moreover, the heat dissipation die bond film 10 of the dicing die bond film 50 can be efficiently cut. The thickness of the base layer 1 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic mean of these thicknesses.

[0060] In the dicing die bond film 50 according to this embodiment, the pressure-sensitive adhesive layer 2 has adhesiveness and holds the heat-dissipating die bond film 10 by adhering it thereto. In order to exhibit the above-mentioned adhesive properties, the adhesive layer 2 contains an adhesive.

[0061] The adhesive may be one whose adhesive strength can be reduced by an external action during use of the dicing die bond film 50 (hereinafter referred to as an adhesive reduction type adhesive).

[0062] When a reduced-adhesion adhesive is used as the adhesive, the adhesive layer 2 can be in a state where it exhibits relatively high adhesive strength (hereinafter referred to as a high-adhesion state) or a state where it exhibits relatively low adhesive strength (hereinafter referred to as a low-adhesion state) during use of the dicing die bond film 50. For example, when a semiconductor wafer attached to the heat-dissipating die bond film 10 of the dicing die bond film 50 is subjected to cleavage, the high-adhesion state is used to prevent the multiple semiconductor chips separated by cleavage of the semiconductor wafer from lifting up or peeling off from the adhesive layer 2. On the other hand, in order to pick up a plurality of individual semiconductor chips after cutting the semiconductor wafer, the low adhesive state is utilized to make it easier to pick up the plurality of semiconductor chips from the adhesive layer 2 .

[0063] The reduced-tack adhesive may be, for example, an adhesive that can be cured by irradiation with active energy rays during use of the dicing die bond film 50 (hereinafter referred to as an active energy ray-curable adhesive). That is, the reduced tack adhesive contains a curing component that is cured by irradiation with active energy rays.

[0064] Examples of the active energy ray-curable adhesive include adhesives that are cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X-rays. Among these, it is preferable to use an adhesive that is cured by ultraviolet irradiation (ultraviolet ray-curable adhesive).

[0065] Examples of the active energy ray-curable adhesive include additive-type active energy ray-curable adhesives containing a base polymer as a main component and an active energy ray-polymerizable monomer component or an active energy ray-polymerizable oligomer component having a functional group such as an active energy ray-polymerizable carbon-carbon double bond. The base polymer is preferably an acrylic polymer. The base polymer may be one that reduces the adhesive strength of the pressure-sensitive adhesive layer 2 by being polymerized and cured by irradiation with active energy rays.

[0066] The acrylic polymer may include a polymer containing a monomer unit derived from a (meth)acrylic acid ester, such as a (meth)acrylic acid alkyl ester, a (meth)acrylic acid cycloalkyl ester, or a (meth)acrylic acid aryl ester. As the monomer unit derived from the (meth)acrylic acid ester, for example, 2-hydroxyethyl acrylate (HEA), ethyl acrylate (EA), butyl acrylate (BA), 2-ethylhexyl acrylate (2EHA), isononyl acrylate (iNA), lauryl acrylate (LA), 4-acryloylmorpholine (AMCO), 2-isocyanatoethyl methacrylate (2-methacryloyloxyethyl isocyanate, MOI), etc. are preferably used. The monomer units derived from the (meth)acrylic acid ester may be used alone or in combination of two or more. The acrylic polymer preferably contains, as the (meth)acrylic acid ester-derived monomer units, 2-ethylhexyl acrylate (2EHA), 2-hydroxyethyl acrylate (HEA), and 2-isocyanatoethyl methacrylate (MOI). Furthermore, the acrylic polymer may contain, as the monomer units derived from the (meth)acrylic acid ester, lauryl acrylate (LA) and isononyl acrylate (iNA) in addition to the 2EHA, the HEA, and the MOI.

[0067] The pressure-sensitive adhesive layer 2 may contain an external crosslinking agent. Any external crosslinking agent can be used as long as it can react with the base polymer (for example, an acrylic polymer) to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

[0068] Examples of the active energy ray-polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the active energy ray-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, polybutadiene-based, etc. The content ratio of the active energy ray-polymerizable monomer component or active energy ray-polymerizable oligomer component in the active energy ray-curable pressure-sensitive adhesive is selected within a range that appropriately reduces the adhesiveness of the pressure-sensitive adhesive layer 2.

[0069] The active energy ray-curable adhesive preferably contains a photopolymerization initiator, such as an azo compound, an α-ketol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonyl chloride compound, a photoactive oxime compound, a benzophenone compound, a thioxanthone compound, camphorquinone, a halogenated ketone, an acylphosphinoxide, or an acylphosphonate. An example of the azo compound is azobisisobutyronitrile (AIBN).

[0070] When the pressure-sensitive adhesive layer 2 contains an external crosslinking agent, the pressure-sensitive adhesive layer 2 preferably contains 0.1 parts by mass or more and 3 parts by mass or less of the external crosslinking agent. When the pressure-sensitive adhesive layer 2 contains a photopolymerization initiator, the pressure-sensitive adhesive layer 2 preferably contains 0.1 parts by mass or more and 10 parts by mass or less of the photopolymerization initiator.

[0071] The pressure-sensitive adhesive layer 2 may contain, in addition to the above components, a crosslinking accelerator, a tackifier, an antioxidant, a colorant such as a pigment or a dye, and the like.

[0072] The thickness of the pressure-sensitive adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and even more preferably 5 μm or more and 25 μm or less. The thickness of the adhesive layer 2 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic mean of these thicknesses.

[0073] In addition, in the dicing die bond film 50 of this embodiment, when the adhesive layer 2 contains the ultraviolet-curing adhesive, it is preferable that the peel force of the heat-dissipating die bond film 10 to the adhesive layer 2 after ultraviolet irradiation is 0.5 N / 20 mm or less. The peeling force is more preferably 0.2 N / 20 mm or less, more preferably 0.1 N / 20 mm or less, and even more preferably 0.08 N / 20 mm or less. When the peeling force is within the above range, the semiconductor chip with the heat dissipating die bond film 10 attached thereto can be smoothly picked up in the pick-up step described below.

[0074] The peel strength of the heat dissipating die bond film 10 from the pressure-sensitive adhesive layer 2 after ultraviolet irradiation can be measured using a tensile tester (for example, manufactured by Shimadzu Corporation, trade name "AGS-X") according to the following procedure. (1) In a dicing die bond film 50 in which a heat dissipating die bond film 10 is laminated on the adhesive layer 2 of a dicing tape 40, a backing tape (for example, "BT-315" manufactured by Nitto Denko Corporation) is attached to the exposed surface of the heat dissipating die bond film 10 at room temperature (23±2°C) to obtain a laminate of the dicing die bond film 50 and the backing tape. (2) Using a cutter, a measurement specimen measuring 100 mm wide x 120 mm long is cut out from the laminate. (3) The measurement specimen is irradiated with ultraviolet (UV) light from the side of the dicing tape 40. The ultraviolet (UV) light is irradiated using a high-pressure mercury lamp with an integrated light intensity of 300 mJ / cm. 2 and UV irradiance 80W / cm 2 The following conditions will be adopted and implemented. (4) After ultraviolet irradiation, the peel force of the heat-dissipating die-bond film 10 against the adhesive layer 2 is measured using the tensile tester to obtain an average test force value, and then the obtained average test force value is divided by 5 to obtain a value converted to a 20 mm width. The peel force is measured using a 5 N load cell at a pulling rate of 300 mm / min. After the ultraviolet irradiation, the test specimen is attached to the tensile tester in the following manner. (a) After the ultraviolet irradiation, the heat dissipating die-bonding film 10 is peeled off from the pressure-sensitive adhesive layer 2 by about 1 cm at one end side of the measurement specimen. (b) One end of the measurement specimen after ultraviolet irradiation is attached to the lower chuck and the upper chuck of the tensile tester. Specifically, a laminate of the heat dissipating die bond film 10 and the backing tape is attached to the lower chuck, and a dicing tape 40 (i.e., a laminate of the base material layer 1 and the adhesive layer 2) is attached to the upper chuck of the tensile tester.

[0075] The adhesive layer 2 can be obtained by applying an adhesive composition containing the above-mentioned components to the surface of a resin film or the like using an applicator or the like, and then drying the applied adhesive composition.

[0076] Moreover, the heat dissipating die-bonding film 10 can be attached to the pressure-sensitive adhesive layer 2 by laminating the heat dissipating die-bonding film 10 on the pressure-sensitive adhesive layer 2 produced as described above. In addition, when the heat-dissipating die-bond film 10 is laminated on the adhesive layer 2 with the resin film attached to one surface, the resin film may be peeled off from one surface of the heat-dissipating die-bond film 10 after lamination.

[0077] The dicing die bond film 50 according to this embodiment is used, for example, as an auxiliary tool for manufacturing semiconductor integrated circuits. A specific example of the use of the dicing die bond film 50 will be described below.

[0078] The dicing die bond film 50 according to this embodiment is used, for example, as an auxiliary tool for manufacturing semiconductor integrated circuits. A specific example of the use of the dicing die bond film 50 will be described below. In the following, an example will be described in which a dicing die bond film 50 having a single base layer 1 is used.

[0079] The method for manufacturing a semiconductor integrated circuit includes a half-cutting process in which grooves are formed in the semiconductor wafer to process the semiconductor wafer into chips (dies) by a cleaving process, a back-grinding process in which the semiconductor wafer after the half-cutting process is ground to reduce its thickness, a mounting process in which one side of the semiconductor wafer after the back-grinding process (for example, the side opposite the circuit side) is attached to a heat-dissipating die-bonding film 10 and the semiconductor wafer is fixed to a dicing tape 40, an expanding process in which the spacing between semiconductor chips is increased, a kerf maintaining process in which the spacing between the semiconductor chips is maintained, a pick-up process in which the heat-dissipating die-bonding film 10 is peeled off from the pressure-sensitive adhesive layer 2 to remove the semiconductor chip (die) with the heat-dissipating die-bonding film 10 attached, and a die-bonding process in which the semiconductor chip (die) with the heat-dissipating die-bonding film 10 attached is bonded to an adherend. When these processes are performed, the dicing tape (dicing die-bonding film) of this embodiment is used as a manufacturing aid.

[0080] In the half-cut process, as shown in FIGS. 4A and 4B, a half-cut process is performed to cleave the semiconductor integrated circuit into small pieces (dies). Specifically, a wafer processing tape T is attached to the surface of the semiconductor wafer W opposite the circuit surface (see FIG. 4A). A dicing ring R is also attached to the wafer processing tape T (see FIG. 4A). With the wafer processing tape T attached, grooves for division are formed (see FIG. 4B). In the back-grinding process, as shown in FIGS. 4C and 4D, the semiconductor wafer is ground to reduce its thickness. Specifically, a back-grinding tape G is attached to the surface with the grooves formed, while the wafer processing tape T that was initially attached is peeled off (see FIG. 4C). With the back-grinding tape G attached, the semiconductor wafer W is ground until it reaches a predetermined thickness (see FIG. 4D).

[0081] 5A and 5B, in the mounting step, after a dicing ring R is attached to the pressure-sensitive adhesive layer 2 of the dicing tape 40, a half-cut semiconductor wafer W is attached to the exposed surface of the heat dissipation die bond film 10 (see FIG. 5A). Thereafter, the backgrinding tape G is peeled off from the semiconductor wafer W (see FIG. 5B).

[0082] In the expanding step, as shown in FIGS. 6A to 6C, the dicing ring R is fixed to a holder H of an expanding device. A push-up member U provided in the expanding device is used to push up the dicing die bond film 50 from below, thereby stretching the dicing die bond film 50 so as to spread it in the planar direction (see FIG. 6B). As a result, the half-cut processed semiconductor wafer W is cleaved under specific temperature conditions. The temperature conditions are, for example, −20 to 5°C, preferably −15 to 0°C, and more preferably −10 to −5°C. The expanded state is released by lowering the push-up member U (see FIG. 6C). 7A and 7B, the dicing tape 40 is stretched to expand its area under higher temperature conditions (for example, room temperature (23±2°C)). This causes adjacent cleaved semiconductor chips to be separated in the planar direction of the film surface, further increasing the gap between them.

[0083] In the kerf maintaining process, as shown in FIG. 8, hot air (e.g., 100 to 130°C, as indicated by the arrow) is applied to the dicing tape 40 to thermally shrink the dicing tape 40, and then the dicing tape 40 is cooled and solidified, thereby maintaining the distance (kerf) between adjacent cleaved semiconductor chips.

[0084] 9, in the pick-up process, the semiconductor chip with the heat dissipation die bond film 10 attached thereto is peeled off from the adhesive layer 2 of the dicing tape 40. More specifically, the pin members P are raised to push up the semiconductor chip to be picked up through the dicing tape 40. The pushed-up semiconductor chip is held by the suction jig J.

[0085] In the die bonding step, the semiconductor chip with the heat dissipating die bond film 10 attached thereto is bonded to an adherend.

[0086] The dicing die bond film according to the present invention is not limited to the above-described embodiment. Furthermore, the dicing die bond film according to the present invention is not limited by the above-described effects. The dicing die bond film according to the present invention can be modified in various ways without departing from the scope of the present invention.

[0087] The matters disclosed by this specification include the following.

[0088] (1) A heat dissipation die bond film made of a resin composition containing a thermosetting resin and a thermoplastic resin as resin components and containing an alumina filler as a thermally conductive filler, The alumina filler includes a first alumina filler having an average particle size of 0.8 μm or more and 2.6 μm or less, the resin composition contains 24% by mass or more of the first alumina filler relative to 100% by mass of the total of the thermosetting resin, the thermoplastic resin, and the alumina filler; Thermal conductivity is 1.4W / (m·K) or more Heat dissipating die bond film.

[0089] (2) The first alumina filler has a thickness of 0.5 m 2 / g or more 6.0m 2 / g or less The heat dissipation die bond film according to (1) above.

[0090] (3) The melt viscosity measured at 120°C is 2500 Pa·s or less The heat dissipation die bond film according to (1) or (2) above.

[0091] (4) The thermosetting resin contains at least one of an epoxy resin and a phenolic resin, The thermoplastic resin contains an acrylic polymer, The acrylic polymer has a mass average molecular weight Mw of 400,000 or less and has a functional group capable of reacting with at least one of the epoxy resin and the phenol resin. The heat dissipating die bond film according to any one of (1) to (3) above.

[0092] (5) The resin composition contains the acrylic polymer in an amount of 3% by mass or more and 80% by mass or less relative to 100% by mass of the thermosetting resin and the thermoplastic resin combined. The heat dissipation die bond film according to (4) above.

[0093] (6) The alumina filler further includes a second alumina filler having an average particle size different from that of the first alumina filler, a particle size distribution curve showing the volume-based frequency of the alumina filler has a first peak top corresponding to the first alumina filler and a second peak top corresponding to the second alumina filler; The first peak top is located on the larger particle diameter side than the second peak top. The heat dissipating die bond film according to any one of (1) to (5) above. [Example]

[0094] The present invention will now be described in more detail with reference to examples. The following examples are intended to explain the present invention in more detail, but are not intended to limit the scope of the present invention.

[0095] [Example 1] (heat dissipating die bond film) According to the compounding ratios shown in Table 1 below, a thermally conductive filler (alumina filler a1), resin components (acrylic polymer c, epoxy resin a, and phenolic resin a), and a thermosetting catalyst (thermosetting catalyst a) were suspended and dissolved in methyl ethyl ketone (MEK) to obtain a first adhesive composition. The first adhesive composition was then filtered using a 400 mesh (38 μm mesh) twill SUS (stainless steel) mesh to obtain a second adhesive composition. The second adhesive composition was then applied to a silicone release-treated surface of a PET separator (50 μm thick) using an applicator to form a coating film with a thickness of 20 μm, and the coating film was then subjected to a solvent removal treatment at 120°C for 2 minutes. As a result, a heat-dissipating die-bonding film having a thickness (average thickness) of 20 μm was produced on the PET separator. That is, a heat dissipating die-bonding film with a PET separator according to Example 1 was obtained.

[0096] The details of each component in Table 1 below are as follows: Alumina Filler Alumina filler A1 Sumitomo Chemical's product name "Sumicorundum AA-1.5" (average particle size 1.7 μm, specific surface area 1.3 m 2 / g) Alumina filler A2 "Sumicorundum AA-1.5" manufactured by Sumitomo Chemical Co., Ltd. was surface treated with "KBM-403" manufactured by Shin-Etsu Chemical Co., Ltd. (a silane coupling agent with an epoxy group). Alumina filler b Sumitomo Chemical's product name "Sumicorundum AA-2" (average particle size 2.1 μm, specific surface area 1.1 m 2 / g) Alumina filler Sumitomo Chemical's product name "Sumicorundum AA-5" (average particle size 5.0 μm, specific surface area 0.4 m 2 / g) Alumina filler Sumitomo Chemical's product name "Sumicorundum AA-03" (average particle size 0.3 μm, specific surface area 5.0 m 2 / g) Alumina filler e1 Denka's product name "DAM-03" (average particle size 3 μm, specific surface area 0.4 m 2 / g) was surface treated with Shin-Etsu Chemical's product name "KBM-403" Alumina filler e2 Denka's "DAM-03" product surface treated with Shin-Etsu Chemical's "KBM-503" (a silane coupling agent with a methacrylic group) Alumina filler Admatechs' product name "AO-502" (spherical, average particle diameter 0.6 μm, specific surface area 4.6 m 2 / g) was surface treated with Shin-Etsu Chemical's product name "KBM-503" thermoplastic resin Acrylic polymer a Nagase ChemteX Corporation's product name "SG-70L" (mass average molecular weight 800,000, acid value 5) Acrylic polymer b Copolymer of acrylonitrile (AN), acrylic acid (AA), butyl acrylate (BA), and ethyl acrylate (EA) (AN / AA / BA / EA = 35 / 0.5 / 37 / 25, mass average molecular weight 150,000, acid value 2) Acrylic polymer c Copolymer of acrylonitrile (AN), acrylic acid (AA), butyl acrylate (BA), and ethyl acrylate (EA) (AN / AA / BA / EA = 35 / 1 / 37 / 25, mass average molecular weight 50,000, acid value 5) thermosetting resin Epoxy resin a Mitsubishi Chemical Corporation's product name: "JER828" (epoxy equivalent weight: approximately 190g / eq) Phenolic resin a Product name: MEHC-8751SS (hydroxyl equivalent: 203g / eq) manufactured by Meiwa Kasei Co., Ltd. thermosetting catalyst ·Thermosetting catalyst a Shikoku Kasei's product name "2PHZ" (imidazole type)

[0097] The surface treatment of the alumina filler with a silane coupling agent was carried out by a dry method. The amount of the silane coupling agent was determined based on the following formula. Amount of silane coupling agent = [mass of alumina filler (g) × specific surface area of ​​alumina filler (m 2 / g)] / minimum coverage area of ​​silane coupling agent (m 2 / g) Minimum coverage area of ​​silane coupling agent (m 2 / g) = 6.02 × 10 23 x13x10 -20 / Molecular weight of silane coupling agent

[0098] (Dicing die bond film) <Synthesis of acrylic polymer> In a reaction vessel equipped with a condenser, a nitrogen inlet pipe, a thermometer, and a stirrer, a mixture containing 98 molar parts of 2-ethylhexyl acrylate (2EHA), 20 molar parts of 2-hydroxyethyl acrylate (HEA), benzoyl peroxide as a polymerization initiator, and toluene as a polymerization solvent was stirred at 60°C for 10 hours under a nitrogen atmosphere (polymerization reaction). In this mixture, the content of benzoyl peroxide was 0.4 parts by mass relative to 100 parts by mass of the monomer components, and the content of toluene was 80 parts by mass relative to 100 parts by mass of the monomer components. A first polymer solution containing a first acrylic polymer was obtained by the above polymerization reaction. Next, 16 molar parts of 2-methacryloyloxyethyl isocyanate (MOI) was added to the first polymer solution, and the mixture was stirred in an air atmosphere at 50° C. for 60 hours (addition reaction). This resulted in a second polymer solution containing a second acrylic polymer having a methacryloyl group in the side chain.

[0099] <Preparation of Pressure-Sensitive Adhesive Composition> To the second polymer solution, 0.05 parts by mass of a crosslinking agent (trade name "Coronate L", a polyisocyanate compound, manufactured by Tosoh Corporation) and 2 parts by mass of a first photopolymerization initiator (trade name "Irgacure 127", manufactured by BASF) were added and mixed per 100 parts by mass of the second acrylic polymer to obtain a pressure-sensitive adhesive composition.

[0100] <Creating dicing tape> The adhesive composition was applied using an applicator to the silicone release-treated surface of a PET separator (50 μm thick) having a silicone release-treated surface, and dried at 120°C for 2 minutes to form an adhesive layer 10 μm thick. Thereafter, an ethylene-vinyl acetate copolymer (EVA) film (product name "RB0103", thickness 125 μm, manufactured by Kurabo Industries, Ltd.) was attached as a base layer onto the pressure-sensitive adhesive layer at room temperature. In this manner, the dicing tape according to Example 1 was obtained.

[0101] <Production of dicing die bond film> First, the heat dissipation die-bonding film with a PET separator according to Example 1 was punched into a circle with a diameter of 330 mm. Next, the PET separator was removed from the dicing tape of Example 1 to expose one side of the adhesive layer, and the exposed surface of the heat-dissipating die-bonding film with the PET separator was superimposed on the exposed surface of the adhesive layer at room temperature (23±2°C). Then, a laminate was obtained by laminating the sheets using a roll laminator, and the laminate was punched into a circle of 370 mmφ, thereby obtaining a dicing die bond film according to Example 1. That is, the dicing tape according to Example 1 was constructed by laminating, in this order, a film made of ethylene-vinyl acetate copolymer (EVA), an adhesive layer, a heat-dissipating die-bonding film, and a PET separator. The lamination using the roll laminator was carried out under the conditions of a lamination speed of 10 mm / sec, a temperature of 23±2° C., and a pressure of 0.15 MPa.

[0102] [Example 2] (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Example 2 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 2 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 2 was used.

[0103] [Example 3] (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Example 3 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 3 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 3 was used.

[0104] [Example 4] (heat dissipating die bond film) A heat dissipation die-bonding film with a PET separator according to Example 4 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 4 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 4 was used.

[0105] [Example 5] (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Example 5 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 5 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 5 was used.

[0106] [Example 6] (heat dissipating die bond film) A heat dissipation die-bonding film with a PET separator according to Example 6 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 6 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 6 was used.

[0107] [Example 7] (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Example 7 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 7 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 7 was used.

[0108] [Example 8] (heat dissipating die bond film) A heat dissipation die-bonding film with a PET separator according to Example 8 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 8 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 8 was used.

[0109] [Example 9] (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Example 9 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 9 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 9 was used.

[0110] [Example 10] (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Example 10 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 10 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 10 was used.

[0111] [Example 11] (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Example 11 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 11 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 11 was used.

[0112] [Example 12] (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Example 12 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 12 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 12 was used.

[0113] [Example 13] (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Example 13 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Example 13 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Example 13 was used.

[0114] [Comparative Example 1] (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Comparative Example 1 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Comparative Example 1 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Comparative Example 1 was used.

[0115] Comparative Example 2 (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Comparative Example 2 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Comparative Example 2 was obtained in the same manner as in Example 1, except that a heat-dissipating die-bonding film with a PET separator according to Comparative Example 2 was used.

[0116] Comparative Example 3 (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Comparative Example 3 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Comparative Example 3 was obtained in the same manner as in Example 1, except that a heat-dissipating die-bonding film with a PET separator according to Comparative Example 3 was used.

[0117] Comparative Example 4 (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Comparative Example 4 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Comparative Example 4 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Comparative Example 4 was used.

[0118] Comparative Example 5 (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Comparative Example 5 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Comparative Example 5 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Comparative Example 5 was used.

[0119] Comparative Example 6 (heat dissipating die bond film) A heat dissipating die-bonding film with a PET separator according to Comparative Example 6 was obtained in the same manner as in Example 1, except that the formulation of the thermally conductive filler, resin component, and thermosetting catalyst was changed as shown in Table 1 below. (Dicing die bond film) A dicing die-bonding film according to Comparative Example 6 was obtained in the same manner as in Example 1, except that the heat-dissipating die-bonding film with a PET separator according to Comparative Example 6 was used.

[0120] [Table 1]

[0121] (Coatability) When the heat dissipating die-bonding film according to each example was produced, the coatability of the second adhesive composition to the PET separator was examined. The coatability was judged according to the following criteria. Excellent: No visual defects in the appearance of the resulting heat dissipating die bond due to cissing or streaks during coating are observed. Unacceptable: Poor appearance is visually observed in the obtained heat dissipating die bond film. The results of the evaluation of the coatability are shown in Table 2 below.

[0122] (exterior) The appearance of the heat dissipating die bond film according to each example was examined. The appearance was judged according to the following criteria: Excellent: When the heat dissipation die bond film is visually inspected, no agglomerates or coarse alumina fillers are found. Unacceptable: When the heat dissipating die bond film is visually inspected, aggregates or coarse alumina fillers are found. The results of the appearance evaluation are shown in Table 2 below.

[0123] (heat dissipation) The heat dissipation properties of the heat dissipation die bond films according to each example were examined. The heat dissipation property was evaluated based on the measured value after measuring the thermal conductivity of the die bond film according to each example, according to the following criteria. Excellent: Thermal conductivity is 2.0 W / (m·K) or higher. Good: Thermal conductivity is between 1.4 W / (m·K) and 2.0 W / (m·K). Acceptable: Thermal conductivity is 1.0 W / (m K) or more and less than 1.4 W / (m K). Unacceptable: Thermal conductivity value is less than 1.0 W / (m·K). The results of the heat dissipation evaluation are shown in Table 2 below.

[0124] (Cutability) A semiconductor wafer (planar dimensions 12 inches (300 mm), thickness 0.060 mm. The semiconductor wafer was cleaved into a plurality of semiconductor chips each having a length of 10 mm and a width of 5 mm by DBG) and a dicing ring were attached to the dicing die bond film according to each example. Next, a die separator DDS2300 (manufactured by Disco Corporation) was used to cleave the semiconductor wafer and the heat dissipation die bond film (mainly to cleave the die bond film), and the cleavability of the heat dissipation die bond film was evaluated. The semiconductor wafer is divided into semiconductor chips (length 10 mm×width 5 mm×thickness 0.060 mm) having the size of the semiconductor chips cut by the DBG by the above-mentioned cutting.

[0125] The breakability of the heat dissipative die-bonding film was evaluated in detail as follows. First, the semiconductor wafer and the heat dissipating die bond film were cleaved in a cool expander unit under the conditions of an expansion temperature of −15° C., an expansion speed of 200 mm / sec, and an expansion amount of 15 mm to obtain a semiconductor chip with a heat dissipating die bond film. Next, expansion was performed at room temperature, an expansion speed of 1 mm / sec, and an expansion amount of 7 mm. Then, while maintaining the expanded state, the dicing die bond film at the boundary with the outer edge of the bare wafer was thermally shrunk under the conditions of a heat temperature of 250°C, a heat distance of 20 mm, and a rotation speed of 5° / sec. Next, the cleavage portion of the semiconductor chip with the heat dissipating die bond film was observed using a microscope, and the cleavability was evaluated according to the following criteria. Excellent: No adhesion between adjacent heat dissipation die bond films is observed. Not permitted: Adjacent heat dissipation die bond films may be stuck together in even one location. The results of the evaluation of the breakability are shown in Table 2 below.

[0126] (embeddability) Using the semiconductor chip with the heat dissipation die bond film obtained in the above evaluation of breakability, embeddability in a BGA (ball grid array) substrate was evaluated. Specifically, the evaluation was carried out according to the following procedure. (1) Using a die bonding machine (DB830Plua+, manufactured by Fasford), the semiconductor chip with the heat dissipating die bond film was bonded to one surface of the BGA substrate (AUS308, 100 μm thick, 8 μm unevenness) under conditions of 120°C, 0.2 MPa, and 1 second, and then the substrate was heated in a pressure oven at 140°C and 7 kg / cm 2 The heat dissipative die bond film is thermally cured under the conditions of 1 minute and 30 minutes. In this way, a test specimen for evaluation is obtained. (2) After cooling the evaluation test specimen to room temperature, the ratio of the total area of ​​voids formed between one surface of the BGA substrate and the exposed surface of the heat dissipating die bond film to the total area of ​​one surface of the semiconductor chip is determined using an SAT in transmission mode. (3) Evaluate embeddability according to the following criteria: Excellent: The ratio is 1% or less Good: The ratio is more than 1% and 10% or less Unacceptable: The ratio exceeds 10% The results of the evaluation of embeddability are shown in Table 2 below.

[0127] (Pickup ability) The semiconductor chip with the heat dissipation die bond film in the cleaved state was evaluated for pick-up ability. The semiconductor chip with the heat dissipating die bond film in a cleaved state was obtained according to the following procedure. (1) A 12-inch bare wafer (300 mm diameter, 55 μm thickness) on which a dividing groove (10 mm × 10 mm) is formed by half-cutting is attached with backgrind tape on the surface on which the dividing groove is formed. (2) Using a back grinder (manufactured by DISCO, model DGP8760), the 12-inch bare wafer is ground to a thickness of 25 μm from the side opposite to the side on which the back grinding tape is attached, to obtain a back-ground bare wafer. (3) A heat dissipation die bond film of the dicing die bond film according to each example is attached to the side opposite to the attached surface of the backgrinding tape in the bare wafer to obtain a bare wafer with a dicing die bond film. (4) Dicing: A bare wafer with a die bond was obtained by expanding it using a die separator device (trade name "Die Separator DDS3200", manufactured by Disco Corporation). The expanding using the die separator was carried out in a state where the backgrind tape was peeled off from the bare wafer. In the expansion using a die separator, cool expansion was performed, followed by room temperature expansion.

[0128] Cool expansion was carried out according to the following procedure. (1) A 12-inch diameter SUS ring frame (manufactured by Disco Corporation) is attached at room temperature to the frame attachment area on the adhesive layer of the dicing die bond film attached to the bare wafer. (2) The bare wafer with the SUS ring frame attached is loaded into a die separator, and the dicing tape of the dicing die bond film is expanded using the cool expander unit of the die separator. (3) Cool expansion is performed under the conditions of an expansion temperature of -15°C, an expansion speed of 100 mm / sec, and an expansion amount of 7 mm. After the cool expansion, the semiconductor wafer was divided into a plurality of semiconductor chips, and the heat dissipation die bond film was also divided into pieces of a size corresponding to the semiconductor chips, and a plurality of semiconductor chips with heat dissipation die bond films were obtained.

[0129] The room temperature expansion was performed by expanding the dicing tape of the dicing die bond film using the room temperature expansion unit of the die separator after the cool expansion. The room temperature expansion was carried out under the conditions of an expansion temperature of 23±2°C, an expansion speed of 1 mm / sec, and an expansion amount of 10 mm. The dicing tape after room temperature expansion was subjected to a heat shrinking treatment at a temperature of 200°C for 20 seconds.

[0130] After the dicing tape was heated and shrunk, a pickup test was performed on the individual semiconductor chips with the heat dissipating die bond film using a device with a pickup mechanism (product name "Die Bonder SPA-300", manufactured by Shinkawa). In the device having the pickup mechanism, the pushing-up speed by the pin member was set to 1 mm / sec, and the pushing-up amount was set to 2000 μm. The pickup test was performed using a Nitto Seiki Co., Ltd. product name "UM-810" (high pressure mercury lamp, 60 mW / cm 2 ) from the dicing tape side with a strength of 150 J / cm 2 The test was carried out after the adhesive layer was cured by irradiation with ultraviolet light of 1000 kJ / cm. The pick-up test was carried out on five semiconductor chips with heat dissipating die bond films, and the pick-up properties were judged according to the following criteria. Excellent: All five semiconductor chips with die bond layers can be picked up. Not possible: At least one of the five semiconductor chips with die bond layers cannot be picked up. The results of the evaluation of the pickup properties are shown in Table 2 below.

[0131] In addition, the thermal conductivity, melt viscosity at 120°C, breaking elongation at -15°C, and peel strength from the adhesive layer after ultraviolet irradiation were determined for the heat dissipation die bond film of each example, and the results are also shown in Table 2 below. In Table 2 below, the melt viscosity at 120°C is referred to as "120°C viscosity," the breaking elongation at -15°C is referred to as "elongation rate," and the peel strength from the adhesive layer after ultraviolet irradiation is referred to as "peeling strength." The thermal conductivity, melt viscosity at 120°C, elongation at break at -15°C, and peel strength from the pressure-sensitive adhesive layer after ultraviolet irradiation were determined by the methods described in the embodiment section.

[0132] [Table 2]

[0133] From Table 2, it can be seen that the heat dissipation die bond films according to the respective examples were good in the evaluation results of heat dissipation, unevenness conformability (embedding ability), and appearance. In contrast to this, it is understood that in the heat dissipation die bond films according to each of the comparative examples, at least one evaluation result of the heat dissipation property, the irregularity followability (embedding property), and the appearance is poor. [Explanation of symbols]

[0134] 1 Base material layer 2. Adhesive layer 10. Heat dissipating die bond film 20 Semiconductor chips 30 Adherent 40 Dicing Tape 50 Dicing die bond film G Backgrind Tape H Holder J suction jig P-pin member R dicing ring T Wafer Processing Tape U Push-up member W Semiconductor wafer

Claims

1. A heat dissipation die bond film composed of a resin composition containing a thermosetting resin and a thermoplastic resin as resin components and containing an alumina filler as a thermally conductive filler, The alumina filler includes a first alumina filler having an average particle size of 0.8 μm or more and 2.6 μm or less, The resin composition contains 24% by mass or more of the first alumina filler relative to a total of 100% by mass of the thermosetting resin, the thermoplastic resin, and the alumina filler, Thermal conductivity is 1.4 W / (m·K) or more Heat dissipating die bond film.

2. The first alumina filler is 0.5 m ２ / g or more 6.0m ２ / g or less The heat dissipation die bond film according to claim 1 .

3. The melt viscosity measured at a temperature of 120°C is 2500 Pa·s or less. The heat dissipation die bond film according to claim 1 or 2.

4. The thermosetting resin includes at least one of an epoxy resin and a phenol resin, The thermoplastic resin contains an acrylic polymer, The acrylic polymer has a mass average molecular weight Mw of 400,000 or less, and has a functional group capable of reacting with at least one of the epoxy resin and the phenol resin. The heat dissipation die bond film according to claim 1 or 2.

5. The resin composition contains the acrylic polymer in an amount of 3% by mass or more and 80% by mass or less relative to 100% by mass of the total of the thermosetting resin and the thermoplastic resin. The heat dissipating die bond film according to claim 4 .

6. The alumina filler further includes a second alumina filler having an average particle size different from that of the first alumina filler, A particle size distribution curve representing a volume-based frequency of the alumina filler has a first peak top corresponding to the first alumina filler and a second peak top corresponding to the second alumina filler, The first peak top is present on the larger particle diameter side than the second peak top. The heat dissipation die bond film according to claim 1 or 2.

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