Method of their field measurement and device

Abstract

To provide a method of their field measurement, and a device.SOLUTION: Various embodiment of a present technique may provide their field measurement. A system is embedded into a susceptor, and may contain a first sensor on a flat surface that is similar to an upper surface of the susceptor. The system may contain a lift pin pad having a second sensor that is arranged so as to be contacted to the lift pin. Also, the system, may contain a third sensor that is arranged to an outside of a reaction chamber, and is adjacent to a view port. Also the system may receive an output signal from one or a plurality of sensors, and may contain a processor for determining a film thickness on a wafer by using this output signal.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates generally to methods and apparatus for in situ metrology and, more particularly, to measuring the amount of deposited material during semiconductor manufacturing. [Background technology]

[0002] Metrology may be used to analyze and evaluate whether a process is occurring as it should during film deposition. One metric that may be important to measure is the thickness of the film deposited on the wafer. This thickness may inform whether the correct amount of deposition has occurred. Traditional methods of measuring film thickness are done ex-situ (outside the reaction chamber), which is not as accurate as it is not a real-time measurement and changes to the film may occur after it is removed from the chamber and exposed to a different environment. Additionally, making these measurements at different locations may negatively impact throughput.

[0003] During processing, films can also build up on reaction chamber components, which can change the thermal properties of the components and lead to uneven heating and therefore wafer non-uniformity. Summary of the Invention

[0004] Various embodiments of the present technology may provide in-situ metrology. The system may include a first sensor embedded within the susceptor and flush with a top surface of the susceptor. The system may also include a lift pin pad having a second sensor positioned to contact the lift pin. The system may also include a third sensor positioned outside the reaction chamber and adjacent a viewport. The system may also include a processor that receives output signals from the one or more sensors and uses the output signals to determine a film thickness on the wafer.

[0005] According to one aspect, an apparatus includes a susceptor configured to support a substrate and including a first surface and a second opposing surface, and a plurality of first through holes extending from the first surface to the second surface and a plurality of second through holes extending from the first surface to the second surface; a first set of pins, each first pin disposed within a through hole of the plurality of first through holes, each first pin configured to have a plurality of positions; and a second set of pins, each second pin having a first end adjacent to the first surface of the susceptor and a second end opposite the first end, each second pin disposed within a through hole of the plurality of second through holes, each second pin having a single fixed position, and a sensor disposed and electrically connected to the first end.

[0006] In one embodiment, the sensor comprises a quartz crystal microbalance and the second set of pins comprises a conductive material.

[0007] In one embodiment, the sensor is flush with the first surface.

[0008] In one embodiment, the susceptor further comprises a plurality of third through holes coupled to a vacuum source.

[0009] In one embodiment, the second set of pins are arranged in a circular pattern.

[0010] In one embodiment, each sensor generates an output signal that corresponds to changes in frequency of the sensor.

[0011] In one embodiment, the apparatus further comprises a processor configured to receive each output signal and determine a mass value based on the change in frequency.

[0012] In one embodiment, the apparatus further comprises a processor configured to receive each output signal and determine a thickness map of the film on the substrate based on a combination of the output signal and a position of each sensor relative to the other sensors.

[0013] In one embodiment, the apparatus further comprises a mechanism attached to each pin of the second set of pins and configured to apply a force to the sensor.

[0014] In yet another aspect, an apparatus includes a susceptor including a first surface and an opposing second surface and a plurality of through holes extending from the first surface to the second surface; a plurality of lift pins, each lift pin disposed within a respective one of the plurality of through holes; and a plurality of sensors embedded within the susceptor, each sensor including a sensing surface disposed coplanar with the first surface, the sensors configured to generate an output signal corresponding to a change in frequency of the sensing surface.

[0015] In one embodiment, the sensor comprises a quartz crystal microbalance.

[0016] In one embodiment, the susceptor further comprises a plurality of third through holes coupled to a vacuum source.

[0017] In one embodiment, the multiple sensors are arranged in a circular pattern.

[0018] In one embodiment, each sensor generates an output signal that corresponds to changes in frequency of the sensor.

[0019] In one embodiment, the apparatus further comprises a processor configured to receive each output signal and determine a mass value based on the change in frequency.

[0020] In one embodiment, the apparatus further comprises a processor configured to receive each output signal and determine a thickness map of the film on the substrate based on a combination of the output signal and a position of each sensor relative to the other sensors.

[0021] In yet another aspect, a system includes a reaction chamber; a susceptor disposed within the reaction chamber and including a first surface and an opposing second surface; a plurality of sensors embedded within the susceptor, each sensor including a sensing surface disposed flush with the first surface, the sensors configured to generate an output signal corresponding to a change in frequency of the sensing surface; and a processor electrically connected to each sensor and configured to receive each output signal and determine a thickness map based on a combination of the output signals and a position of each sensor relative to the other sensors.

[0022] In one embodiment, the system further comprises a mechanism attached to each pin of the second set of pins and configured to apply a force to the sensor.

[0023] In one embodiment, the sensors are arranged in a circular pattern.

[0024] In one embodiment, the processor is further configured to detect when the change in frequency is outside a predetermined range and to generate an error signal in response.

[0025] In yet another aspect, a system includes a susceptor disposed within an interior space of a reaction chamber, the susceptor including a plurality of through holes, a plurality of pins disposed within each of the plurality of through holes, a plurality of pin pads disposed below the susceptor, each pin pad aligned with one of the plurality of pins, a sensor disposed on an upper surface of the pin pad, the sensor generating a signal corresponding to a mass, and a processor coupled to the sensor and configured to receive the signal, determine a change in mass based on the signal, and determine a film thickness based on the determined change in mass.

[0026] In yet another aspect, a system includes a reaction chamber including a sidewall and a bottom surface perpendicular to the sidewall, the sidewall and the bottom surface defining an interior volume of the reaction chamber, a susceptor disposed within the interior volume, a viewport disposed within the sidewall, emissometers disposed exterior to the reaction chamber and adjacent the viewport, a first emissometer generating an output signal, and a processor coupled to the emissometers and configured to receive the output signals and detect a change in value of the output signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] A more complete understanding of the present technology may be obtained by reference to the detailed description when considered in conjunction with the following illustrative figures, in which like reference numerals refer to like elements and steps throughout. [Brief description of the drawings]

[0028] [Figure 1] 1 is a block diagram of a system in accordance with various embodiments of the present technology. [Diagram 2] 1 is a representative cross-sectional view of a susceptor, in accordance with various embodiments of the present technique; [Diagram 3] 1 is a representative top view of a susceptor, in accordance with various embodiments of the present technique; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] The technology may be described in terms of functional block components and various process steps. Such functional blocks may be realized by any number of components configured to perform the specified functions and achieve various results. For example, the technology may employ various reaction chambers, susceptors, lift pins, processors, and showerhead plates.

[0030] 1, an exemplary system 100 may include a reactor including a showerhead assembly and a reaction chamber 105. The reactor may be used to deposit a film on a substrate, such as a wafer 125. The reaction chamber 105 may include a number of sidewalls and a bottom surface that form an interior space.

[0031] In an exemplary embodiment, the reaction chamber 105 may further include a first viewport 145 disposed in the sidewall. The first viewport 145 may extend through the entire thickness of the sidewall such that the interior space is visible from outside the reaction chamber 105 through the first viewport 145. The first viewport 145 may be formed from quartz, sapphire, or any other suitable transparent material. The first viewport 145 may be positioned in an upper region of the sidewall and away from the bottom surface.

[0032] In various embodiments, the reaction chamber 105 may further include a second viewport 170 disposed in a bottom surface of the reaction chamber 105. The second viewport 170 may extend through the entire thickness of the bottom surface such that the interior space is visible from outside the reaction chamber 105 through the second viewport 170. The second viewport 170 may be formed from quartz, sapphire, or any other suitable transparent material. The second viewport 170 may be positioned where it is possible to see through to the bottom surface of the susceptor 120 and the edge of the susceptor 120.

[0033] In various embodiments, the showerhead assembly may include a lid 110 and a showerhead plate 115. The showerhead plate 115 may include a plurality of through-holes 150 configured to allow gas to flow into the interior space of the reaction chamber 105. The showerhead assembly may be disposed above the reaction chamber 105 and may seal the interior space of the reaction chamber 105. In particular, the showerhead plate 115 may be placed directly on a sidewall of the reaction chamber 105.

[0034] In various embodiments, with reference to FIGS. 1-3, a susceptor 120 may be configured to support a wafer 125 during processing / film deposition and may be disposed within the interior space of the reaction chamber 105. The susceptor 120 may be formed from a ceramic material, such as aluminum oxide, or a metallic material, such as the metal alloy C22, or any other suitable metal or metal alloy. The susceptor 120 may include a first upwardly facing surface 165 and a second opposing downwardly facing surface. In various embodiments, during processing, the wafer 125 is positioned on the first surface 165. In various embodiments, the susceptor 120 may include a heating element (not shown) embedded within the susceptor 120. The heating element may be utilized to control the temperature of the susceptor 120.

[0035] In various embodiments, the susceptor 120 may include a plurality of first through holes 210 extending from the first surface 165 to the second surface. In an exemplary embodiment, the susceptor 120 includes three through holes 210 arranged in a triangular pattern.

[0036] In some embodiments, the susceptor 120 may be configured to move upward to a processing position (as shown in FIG. 1) and downward to a wafer removal position. Alternatively, the susceptor 120 may be in a fixed position.

[0037] In some embodiments, the susceptor 120 may further comprise a plurality of second through-holes.

[0038] In various embodiments, the system 100 may further include a plurality of lift pins 130. Each lift pin 130 may be disposed within a respective through hole 210 in the susceptor 120 and extend below the downward-facing surface of the susceptor 120. The lift pins 130 may be formed from a ceramic material or a metallic material.

[0039] In various embodiments, system 100 may further include a plurality of lift pin pads 135. Lift pin pads 135 may be disposed below susceptor 120. For example, lift pin pads 135 may be attached to a bottom surface of reaction chamber 105. Alternatively, lift pin pads 135 may be movable relative to susceptor 120. For example, lift pin pads 135 may be coupled to an actuator or the like to move lift pin pads 135 up and down.

[0040] Each lift pin pad 135 is disposed directly below and aligned with a respective lift pin 130. For example, a first lift pin pad 135(a) is disposed directly below the first lift pin 130(a), and a second lift pin pad 135(b) is disposed directly below the second lift pin 130(b). Each lift pin pad 135 may have an upper surface with an area large enough to support a respective lift pin 130.

[0041] In various embodiments, each lift pin pad 135 may include a first sensor 140 on a top surface of the pin pad 135. In an exemplary embodiment, the first sensor 140 may include a quartz crystal microbalance configured to generate a first sensor output signal. In an exemplary embodiment, each pin pad 135 of the plurality of pin pads 135 includes a dedicated and independent first sensor 140.

[0042] In various embodiments, the system 100 may further include a thermal sensor 155 configured to measure thermal radiation. The thermal sensor 155 may be disposed outside the reaction chamber 105 and adjacent to the viewports 145, 170. For example, a first thermal sensor 155(a) may be adjacent to the first viewport 145, and a second thermal sensor 155(b) may be adjacent to the second viewport 170. The first thermal sensor 155(a) may be positioned to measure thermal radiation of components inside the reaction chamber 105, such as the first surface 165 of the susceptor 120, the showerhead plate 115, and the opposing sidewalls of the reaction chamber 105. Similarly, the second thermal sensor 155(b) may be positioned to measure thermal radiation of components inside the reaction chamber 105, particularly the bottom surface of the susceptor 120 and the edge of the susceptor 120. The first thermal sensor 155(a) and the second thermal sensor 155(b) may be fixedly or rotatably mounted outside the reaction chamber 120. The thermal sensor 155 may comprise an emissometer or pyrometer, or any other sensor suitable for measuring thermal radiation or thermal emissivity. The thermal sensor 155 may generate a thermal sensor output signal.

[0043] In some embodiments, the system 100 may further include a set of second sensors 200. Each second sensor 200 may generate a second sensor output signal. The second sensor output signal may indicate a change in frequency of the respective sensor 200. The set of second sensors 200 may be disposed on the first surface 165 of the susceptor 120. In particular, the set of second sensors 200 may be flush with the first surface 165. The set of second sensors 200 may be arranged in a uniform pattern across the susceptor 120 (e.g., circular and / or equidistant spacing between sensors) or any other suitable pattern. Each second sensor output signal may also correspond to a specific location within the susceptor 120. In an exemplary embodiment, each sensor of the set of second sensors 200 includes a quartz crystal microbalance.

[0044] In various embodiments, the system 100 may further include a processor 160 configured to receive the sensor signals and generate various control signals based on the received sensor signals. For example, the processor 160 may receive output signals from the first sensor 140, the second sensor 200, and the thermal sensor 155. The processor 160 may be configured to generate a thickness map of the film on the wafer 125 based on the signals from the first sensor 140 and / or the second sensor 200. For example, the processor 120 may be configured to convert the output signals from the first sensor 140 or the second sensor 200 into a mass value. In some cases, the processor 120 may utilize a look-up table of predetermined values ​​or use an algorithm to calculate the mass.

[0045] Additionally, the processor 160 may receive output signals from the thermal sensor 155. The processor 160 may utilize these output signals to determine changes in emissivity over time. The processor 160 may then use the changes in emissivity to generate an alert or other message to notify the system 100 (or an operator) that a maintenance or cleaning process needs to be performed on the reaction chamber 105 and / or the susceptor 120.

[0046] In various embodiments, the processor 160 may be configured to send control signals to various components of the system 100, such as the susceptor 120 and the heating elements within the susceptor 120. For example, the processor 160 may control the movement of the susceptor 120 and may control the temperature of the susceptor 120 by operating the heating elements.

[0047] The system 100 may further include a set of electrical interconnects 205 configured to provide an electrical connection. For example, each electrical interconnect 205 may electrically couple the second sensor 200 to the processor 160 and may be configured to transmit the second sensor output signal to the processor 160. Each electrical interconnect 205 may be formed from a material that is electrically conductive, such as a metallic material.

[0048] In some embodiments, the electrical interconnects 205 may comprise rigid pins, where each pin may be disposed within a through hole of the plurality of second through holes in the susceptor 120. A first end of the pin may be coupled to a sensor of the second set of sensors 200 to provide an independent electrical connection to the sensors 200.

[0049] In some embodiments, the electrical interconnects 205 may comprise flexible wires embedded within the susceptor 120 .

[0050] Each electrical interconnect 205 may be at a fixed position within the through-hole. Alternatively, each electrical interconnect 205 may be movable within the through-hole. For example, if the electrical interconnect is a pin, the second end of the pin 205 may be coupled to a mechanism such as an actuator (not shown) that applies a force to move the pin 205 and respective sensor 200 up or down.

[0051] In various operations, the system 100 may generate a thickness map of the film on the wafer 125. In particular, the processor 160 may move the susceptor 120 to a processing position. During processing, the second sensors 200 may generate output signals indicative of a change in frequency of each of the second sensors 200 and send the output signals to the processor 160. The processor 160 may then convert the change in frequency into a mass value of each second sensor 200. Since the position of each second sensor 200 is known, the processor 160 may then generate a thickness map of the film on the wafer 125 based on the mass values. The thickness map may indicate whether the film being deposited on the wafer 125 is uniform. If the thickness of the film is not uniform, the system 100 may generate an alert to stop processing or to execute a processing scheme to correct the non-uniformity, such as adjusting the temperature of a particular area of ​​the susceptor or adjusting the pressure in the reaction chamber 105.

[0052] Additionally or alternatively, the processor 160 may move the susceptor 120 downward to a wafer removal position. As the susceptor 120 moves downward, the lift pins 130 contact the lift pin pads 135, and the lift pins lift the wafer 125 off the surface of the susceptor 120. At this position, the first sensors 140 may generate output signals indicative of a change in frequency of each of the first sensors 140 and send the output signals to the processor 160. The processor 160 may then convert the change in frequency into a mass value of each of the first sensors 140. Since the position of each of the first sensors 140 is known, the processor 160 may then generate a thickness map of the film on the wafer 125 based on the mass values. The thickness map may indicate whether the film being deposited on the wafer 125 is uniform. If the film thickness is not uniform, the system 100 may generate an alert to stop processing or to implement a processing scheme to correct the non-uniformity, such as adjusting the temperature in a particular area of ​​the susceptor or adjusting the pressure in the reaction chamber 105.

[0053] Additionally, the system 100 may determine when maintenance and / or cleaning of the reaction chamber 105 and other components, such as the susceptor 120 and showerhead plate 115, may be desirable. In particular, one or more of the thermal sensors 155 may generate an output signal indicative of the thermal emissivity of the surface of the component and transmit the output signal to the processor 160. The processor 160 may then utilize the thermal emissivity data to determine whether maintenance or cleaning is required. As films deposit and build up on the surface of the component, the thermal emissivity of the component will change. For example, as films build up on the susceptor 120 or showerhead plate 115, the thermal emissivity will decrease. This may indicate that the susceptor 120 is not heating the wafer 125 to a desired temperature, which may lead to non-uniform film deposition. Thus, if the thermal emissivity value falls below a predetermined threshold, the processor 160 may generate an alert or other indication that cleaning or maintenance of the chamber is required.

[0054] In the preceding description, the technology has been described with reference to certain exemplary embodiments. The specific implementations shown and described are illustrative of the technology and its best modes, and are not intended to otherwise limit the scope of the technology in any way. Indeed, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the methods and systems may not be described in detail. Furthermore, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or steps between the various elements. Many alternative or additional functional relationships or physical connections may exist in an actual system.

[0055] The present technology has been described with reference to certain exemplary embodiments. However, various modifications and changes may be made without departing from the scope of the present technology. The description and figures are to be regarded in an illustrative manner, not restrictive, and all such modifications are intended to be included within the scope of the present technology. Thus, the scope of the technology should be judged by the general embodiments described, and their legal equivalents, and not merely by the specific examples described above. For example, the steps recited in any method or process embodiment may be performed in any order, unless expressly specified otherwise, and are not limited to the explicit order presented in the specific examples. Furthermore, the components and / or elements recited in any apparatus embodiment may be assembled in various permutations or configured to operate in other ways to produce substantially the same results as the present technology, and therefore are not limited to the specific configurations recited in the specific examples.

[0056] Benefits, other advantages, and solutions to problems have been described above with respect to specific embodiments. Any benefit, advantage, solution to a problem, or any element that may cause or make more pronounced any particular benefit, advantage, or solution, is not, however, construed as a critical, required, or essential feature or component.

[0057] The terms "comprises," "comprising," or any variation thereof, are intended to refer to an open-ended inclusion, such that a process, method, article, composition, or apparatus comprising a list of elements may include not only those elements listed, but also other elements not expressly listed or inherent to such process, method, article, composition, or apparatus. In addition to those not specifically listed, other combinations and / or modifications of the above-described structure, arrangement, application, proportions, elements, materials, or components used in the practice of the technology may be varied or otherwise specifically adapted to particular environments, manufacturing specifications, design parameters, or other operating requirements without departing from the general principles thereof.

[0058] The present technology has been described above with reference to exemplary embodiments. However, changes and modifications may be made to the exemplary embodiments without departing from the scope of the technology. These and other changes or modifications are intended to be included within the scope of the technology, as expressed in the following claims. [Explanation of symbols]

[0059] 100 Systems 105 Reaction Chamber 110 Lid 115 shower head plate 120 Susceptor 125 wafers 130 Lift pin 135 Lift Pin Pad 140 Sensors 145 viewport 150 Through hole 155 Thermal Sensor 160 processors 165 Surface 170 viewport 200 Sensors 205 Electrical Interconnects 210 Through hole

Claims

1. An apparatus comprising: a susceptor configured to support a substrate and including a first surface and a second opposing surface, a plurality of first through holes extending from the first surface to the second surface, and a plurality of second through holes extending from the first surface to the second surface; a set of first pins, each first pin disposed within a through hole of the plurality of first through holes, each first pin configured to have a plurality of positions; a set of second pins, each second pin comprising: a first end adjacent the first surface of the susceptor and a second end opposite the first end, Each second pin is disposed within a through hole of the plurality of second through holes; Each second pin has a single fixed location, a first end adjacent the first surface of the susceptor and a second end opposite the first end; a second set of pins including a sensor disposed on and electrically connected to the first end.

2. The apparatus of claim 1 , wherein the sensor comprises a quartz crystal microbalance and the second set of pins comprises a conductive material.

3. The apparatus of claim 1 , wherein the sensor is coplanar with the first surface.

4. The apparatus of claim 1 , wherein the susceptor further comprises a plurality of third through holes coupled to a vacuum source.

5. The apparatus of claim 1 , wherein the second set of pins is arranged in a circular pattern.

6. 10. The apparatus of claim 1, wherein each sensor generates an output signal corresponding to a change in frequency of the sensor.

7. The apparatus of claim 6 , further comprising a processor configured to receive each output signal and determine a mass value based on the change in frequency.

8. 7. The apparatus of claim 6, further comprising a processor configured to receive each output signal and determine a thickness map of a film on the substrate based on a combination of the output signal and a position of each sensor relative to other sensors.

9. The apparatus of claim 1 , further comprising a mechanism attached to each pin of the second set of pins and configured to apply a force to the sensor.

10. An apparatus comprising: a first surface and an opposing second surface; and a plurality of through holes extending from the first surface to the second surface; A susceptor; a plurality of lift pins, each lift pin disposed within a respective one of the plurality of through holes; a plurality of sensors embedded within the susceptor, each sensor including a sensing surface disposed flush with the first surface, the sensors configured to generate an output signal corresponding to a change in frequency of the sensing surface.

11. The apparatus of claim 10 , wherein the sensor comprises a quartz crystal microbalance.

12. The apparatus of claim 10 , wherein the susceptor further comprises a third plurality of through holes coupled to a vacuum source.

13. The apparatus of claim 10 , wherein the plurality of sensors are arranged in a circular pattern.

14. The apparatus of claim 10 , wherein each sensor generates an output signal corresponding to a change in frequency of the sensor.

15. The apparatus of claim 14 , further comprising a processor configured to receive each output signal and determine a mass value based on the change in frequency.

16. 15. The apparatus of claim 14, further comprising a processor configured to receive each output signal and determine a thickness map of a film on the substrate based on a combination of the output signal and a position of each sensor relative to the other sensors.

17. 1. A system comprising: A reaction chamber; a susceptor disposed within the reaction chamber and including a first surface and an opposing second surface; a plurality of sensors embedded within the susceptor, each sensor including a sensing surface disposed coplanar with the first surface, the sensors configured to generate an output signal corresponding to a change in frequency of the sensing surface; a processor electrically connected to each sensor and configured to receive each output signal and determine a thickness map based on a combination of the output signals and a position of each sensor relative to the other sensors.

18. 20. The system of claim 17, further comprising a mechanism attached to each pin of the second set of pins and configured to apply a force to the sensor.

19. The system of claim 17 , wherein the sensors are arranged in a circular pattern.

20. 20. The system of claim 17, wherein the processor is further configured to detect when the change in frequency is outside a predetermined range and to generate an error signal in response.

21. 1. A system comprising: a susceptor disposed within an interior space of the reaction chamber, the susceptor including a plurality of through holes; a plurality of pins disposed within each of the plurality of through holes; a plurality of pin pads disposed below the susceptor, each pin pad aligned with one of the plurality of pins; a sensor disposed on a top surface of the pin pad, the sensor generating a signal corresponding to a mass; a processor coupled to the sensor and configured to receive the signal, determine a change in mass based on the signal, and determine a film thickness based on the determined change in mass.

22. 1. A system comprising: a reaction chamber including a sidewall and a bottom surface perpendicular to said sidewall, said sidewall and said bottom surface defining an interior volume of said reaction chamber; a susceptor disposed within the internal space; a viewport disposed within the sidewall; and a first emissivity meter disposed outside the reactor and adjacent the viewport, the first emissivity meter generating an output signal; a processor connected to the emissometer and configured to receive the output signal and detect changes in a value of the output signal.

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