Display device, display module, and electronic device

Abstract

To provide a highly reliable display device having a light detection function.SOLUTION: A display device includes a light receiving device and a light emitting device. The light receiving device has an active layer between a pair of electrodes, and the light emitting device includes a hole injection layer, a light emitting layer, and an electron transport layer between a pair of electrodes. The light receiving device and the light emitting device have one electrode as a common layer, and may have a common layer between a pair of electrodes. The hole injection layer abuts on a positive electrode and has a first compound and a second compound. Electron transportability in the electron transport layer is low and electrons do not become excessive easily in the light emitting layer. The first compound has electron acceptability for the second compound. An HOMO level of the second compound is equal to or more than -5.7 eV and is equal to or less than -5.4 eV.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device, a display module, and an electronic device. has a light receiving device (also called a light receiving element) and a light emitting device (also called a light emitting element) This relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), These driving methods and manufacturing methods can be given as examples. [Background technology]

[0003] In recent years, display devices are expected to be used in a variety of applications. For example, the use of large display devices Examples include home television equipment (also called television or television receiver), digital Digital Signage, PID (Public Information Display) c Information Display) and other mobile information terminals. In response to this, the development of smartphones and tablet devices equipped with touch panels is underway.

[0004] As a display device, for example, a light-emitting device having a light-emitting device has been developed. Electroluminescence (hereinafter referred to as EL) phenomenon The light-emitting devices used (also called EL devices or EL elements) can be easily made thin and lightweight. The device has the following features: it can respond quickly to input signals; it can be driven by a low-voltage DC power supply; For example, Patent Document 1 describes an organic EL device (organic A flexible light-emitting device using a light-emitting diode (also called an EL element) is disclosed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2014-197522 A Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a display device having a light detection function. An object of one embodiment of the present invention is to provide a display device having a light detection function and high reliability. An object of one embodiment of the present invention is to provide a highly convenient display device. An object of one embodiment of the present invention is to provide a multifunctional display device. An object of the present invention is to provide a display device with high display quality. It is an object of the present invention to provide a display device with high emission sensitivity. One object of the present invention is to provide a display device.

[0007] Note that the description of these problems does not preclude the existence of other problems. However, it is not necessary to solve all of these problems. It is possible to extract other issues from the description in the section. [Means for solving the problem]

[0008] One embodiment of the present invention is a display device including a light-receiving device and a light-emitting device. The light emitting device has a first pixel electrode, an active layer, and a common electrode. The active layer includes a first pixel electrode, a hole injection layer, a light emitting layer, an electron transport layer, and a common electrode. The light-emitting layer is disposed on the second pixel electrode and has a first organic compound. and a second organic compound different from the first organic compound. a portion overlapping with the first pixel electrode via a light emitting layer, and a portion overlapping with the second pixel electrode via a light emitting layer; The hole injection layer is provided on the second pixel electrode and the common electrode which functions as an anode. The electron transport layer is in contact with the first compound and the second compound. The first compound has an electron accepting property for the second compound. H of the second compound The OMO level is -5.7 eV or more and -5.4 eV or less. The electron transport material has a HOMO The electric field strength [V / cm] is 600. Child mobility is 1×10 -7 cm 2 / Vs or more 5×10 -5 cm 2 / Vs or less. The device preferably further comprises a hole injection layer. The hole injection layer is disposed between the first pixel electrode a portion overlapping the active layer and a portion overlapping the light-emitting layer, the portion being located on the first pixel electrode and the second pixel electrode; It is preferred that

[0009] One embodiment of the present invention is a display device including a light-receiving device and a light-emitting device. The light emitting device has a first pixel electrode, an active layer, and a common electrode. The active layer is located on the first pixel electrode, the light-emitting layer, the electron transport layer, and the common electrode. The light-emitting layer is located on the second pixel electrode and has a first organic compound. The common electrode is connected to the first organic compound through the active layer. The first pixel electrode has a portion overlapping the pixel electrode and a portion overlapping the second pixel electrode via the light emitting layer. The electron transport layer includes an electron transport material and a first substance. The first substance is a metal, a metal salt, or the like. , a metal oxide, or an organometallic complex. The electron transport layer comprises a first region, a second region, and The first region and the second region have different concentrations of the first substance. When the first region is located closer to the light emitting layer than the second region, the first region has a smaller diameter than the second region, The concentration of the first substance is preferably high. The electron transporting material has a HOMO level of −6.0e V or more, and the electron mobility at the square root of the electric field strength [V / cm] is 1×1 0 -7 cm 2 / Vs or more 5×10 -5 cm 2 / Vs or less. The device preferably further comprises a hole injection layer. The hole injection layer is connected to the second pixel electrode and The hole injection layer is in contact with the electrode that functions as an anode among the common electrode and the first compound and It is preferable that the first compound has an electron acceptor for the second compound. The HOMO level of the second compound is preferably −5.7 eV or more and −5. It is preferably 4 eV or less.

[0010] The light receiving device preferably further comprises an electron transport layer. The electron transport layer is A portion of the first pixel electrode overlapping the active layer and a portion of the second pixel electrode overlapping the light-emitting layer. It is preferred that the ion exchange resin has a moiety

[0011] Preferably, the light receiving device and the light emitting device further comprise a common layer. a portion located on the first pixel electrode and the second pixel electrode and overlapping with the active layer; and an overlapping portion.

[0012] The light emitting device preferably further comprises a first hole transport layer. It is preferable that the compound has a third compound. The HOMO level of the third compound is higher than that of the second compound. The HOMO level of the third compound is equal to or lower than the HOMO level of the second compound. The difference between the HOMO level and the second compound is preferably within 0.2 eV. The compounds have a carbazole skeleton, a dibenzofuran skeleton, and a dibenzothiophene skeleton, respectively. and an anthracene skeleton.

[0013] The light emitting device preferably further comprises a second hole transport layer. It is preferable that the fourth compound has a HOMO level lower than that of the third compound. The second compound, the third compound, and the fourth compound are preferably lower than the HOMO level of the compound. The compounds have a carbazole skeleton, a dibenzofuran skeleton, and a dibenzothiophene skeleton, respectively. and an anthracene skeleton.

[0014] The first substance is an organometallic complex having an alkali metal or an alkaline earth metal. The first substance is preferably a ligand having nitrogen and oxygen and an alkali metal or alkali metal ion. The first substance is preferably an organometallic complex having a quinolinol and an alkali earth metal. An organometallic complex having a ruthenium ligand and an alkali metal or an alkaline earth metal. is preferred.

[0015] Preferably, the light emitting device exhibits blue light.

[0016] Preferably, the light emitting device is a fluorescent light emitting device.

[0017] The display device according to one embodiment of the present invention preferably further includes a resin layer, a light-shielding layer, and a substrate. The resin layer and the light-shielding layer are preferably located between the common electrode and the substrate.

[0018] For example, the resin layer preferably has an opening that overlaps with the light receiving device. It is preferable that the light-shielding layer has a portion overlapping with the device. The light-shielding layer is located between the common electrode and the resin layer. The light-shielding layer preferably has a portion where the light-shielding layer is placed. It is preferable to cover at least a part of the exposed side surface of the resin layer.

[0019] Alternatively, the resin layer is preferably provided in an island shape and has a portion overlapping the light emitting device. It is preferable that the light-shielding layer has a portion located between the common electrode and the resin layer. At least a part of the light passing through the plate is incident on the light receiving device without passing through the resin layer. It is preferable that the light-shielding layer covers at least a part of the side surface of the resin layer.

[0020] The display device according to one embodiment of the present invention preferably further includes an adhesive layer. It is preferable that the resin layer and the light-shielding layer are located between the electrode and the substrate. The adhesive layer has a first portion that overlaps the light-receiving device and a second portion that overlaps the light-receiving device. and a second portion overlapping the light emitting device. It is preferable that the thickness is thicker than the thickness.

[0021] The display device according to one embodiment of the present invention preferably has flexibility.

[0022] One aspect of the present invention is a display device having any one of the above configurations, Flexible Printed Circuit (hereinafter referred to as FPC) or is equipped with a TCP (Tape Carrier Package) or other connector. Module, or COG (Chip On Glass) or COF (Chi Modules with integrated circuits (ICs) mounted using the "p on film" method, etc. It is a rule.

[0023] One aspect of the present invention is a combination of the above module, an antenna, a battery, a housing, a camera, and a speaker. , a microphone, and an operation button. Effect of the Invention

[0024] According to one embodiment of the present invention, a display device having a light detection function can be provided. In this way, a display device having a light detection function and high reliability can be provided. According to one embodiment of the present invention, a multi-function display device can be provided. According to one embodiment of the present invention, a display device with high display quality can be provided. According to this embodiment, a display device having high sensitivity for detecting light can be provided. It is possible to provide a display device.

[0025] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. However, it is possible to extract effects other than these. [Brief description of the drawings]

[0026] [Figure 1] Figures 1(A) to 1(D) are cross-sectional views showing an example of a display device, and Figures 1(E) to 1(I) are top views showing an example of a pixel. [Diagram 2] FIG. 2 is a cross-sectional view showing an example of a display device. [Diagram 3] Fig. 3(A) is a cross-sectional view showing an example of a display device, Fig. 3(B) and Fig. 3(C) are diagrams showing an example of an upper surface layout of a resin layer. [Figure 4] 4(A) and 4(B) are cross-sectional views showing an example of a display device. [Diagram 5] 5(A) to 5(C) are cross-sectional views showing an example of a display device. [Figure 6] 6(A) to 6(C) are cross-sectional views showing an example of a display device. [Figure 7] Fig. 7(A) is a top view showing an example of a display device, and Fig. 7(B) is a cross-sectional view showing the example of the display device. [Figure 8] 8(A) and 8(B) are cross-sectional views showing an example of a display device. [Figure 9] Fig. 9(A) is a top view showing an example of a display device, and Fig. 9(B) is a cross-sectional view showing an example of the display device. [Figure 10] Fig. 10(A) is a top view showing an example of a display device, and Fig. 10(B) is a cross-sectional view showing the example of the display device. [Figure 11] 11(A) and 11(B) are cross-sectional views showing an example of a display device. [Figure 12] 12(A) and 12(B) are cross-sectional views showing an example of a display device. [Figure 13] FIG. 1 is a perspective view showing an example of a display device. [Figure 14] FIG. 1 is a cross-sectional view showing an example of a display device. [Figure 15] 15(A) and 15(B) are cross-sectional views showing an example of a display device. [Figure 16]FIG. 1 is a cross-sectional view showing an example of a display device. [Figure 17] Fig. 17A is a cross-sectional view illustrating an example of a display device, and Fig. 17B is a cross-sectional view illustrating an example of a transistor. [Figure 18] 18(A) to 18(D) are cross-sectional views showing an example of a light-emitting device. [Figure 19] Figures 19(A) to 19(C) are conceptual diagrams for explaining a light emission model of a light emitting device, and Figure 19(D) is a diagram for explaining normalized luminance of a light emitting device over time. [Figure 20] 20(A) to 20(D) are diagrams illustrating the concentration of the first substance in the electron transport layer. [Figure 21] 21(A) and 21(B) are circuit diagrams showing an example of a pixel circuit. [Figure 22] Fig. 22(A) is a block diagram showing an example of a pixel, and Fig. 22(B) is a circuit diagram showing an example of a pixel circuit. [Diagram 23] 23(A) and 23(B) are diagrams showing an example of an electronic device. [Figure 24] 24(A) to 24(D) are diagrams showing an example of an electronic device. [Diagram 25] 25(A) to 25(F) are diagrams showing an example of an electronic device. [Figure 26] FIG. 26 is a diagram showing the structure of an electron-only device. [Figure 27] FIG. 27 shows the current density-voltage characteristics of an electron-only device. [Figure 28] FIG. 28 is a diagram showing the frequency characteristics of the calculated capacitance C of ZADN:Liq (1:1) at a DC voltage of 7.0 V. [Figure 29] FIG. 29 is a diagram showing the frequency characteristics of −ΔB of ZADN:Liq(1:1) at a DC voltage of 7.0 V. [Diagram 30] FIG. 30 is a diagram showing the electric field strength dependence of electron mobility in each organic compound. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. It should not be construed as being limited to the contents described.

[0028] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.

[0029] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, in order to facilitate understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0030] The words "film" and "layer" may be interchangeable depending on the circumstances. For example, the term "conductive layer" can be replaced with "conductive film" Alternatively, for example, the term "insulating film" can be changed to " The term "insulating layer" may be changed to "insulating layer."

[0031] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0032] The display device of the present embodiment has a light receiving device and a light emitting device in a display section. The display device of the above embodiment has a display section in which light-emitting devices are arranged in a matrix. The display unit can display an image. The display unit also includes a matrix of light receiving devices. The display unit also functions as a light receiving unit. In other words, it can be used as a touch sensor or a touch sensor to detect an image by detecting light with the light receiving part. It is possible to capture images and detect the proximity or contact of an object (such as a finger or pen). Furthermore, the display device of the present embodiment can use the light emitting device as a light source for a sensor. Therefore, it is not necessary to provide a light receiving section and a light source separately from the display device, and the light receiving section and the light source can be easily mounted on the electronic device. The number of points can be reduced.

[0033] In the display device of this embodiment, when the light emitted by the light-emitting device included in the display portion is reflected by an object, The light-receiving device can detect the reflected light, so imaging and touch (near-touch) can be performed even in dark places. It is possible to detect

[0034] The display device of this embodiment has a function of displaying an image by using a light-emitting device. Thus, the light emitting device functions as a display device.

[0035] The light-emitting device is OLED (Organic Light Emitting Diode). iode) and QLED(Quantum-dot Light Emitting Di) It is preferable to use an EL device such as an EL device having a light-emitting material and These include substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), and inorganic compounds ( Quantum dot materials, etc.), materials that exhibit thermally activated delayed fluorescence (Therma lly Activated Delayed Fluorescence (TADF) As for light-emitting devices, micro LEDs (Light Emitting Diodes) are also used. Alternatively, an LED such as a light emitting diode (LED) can be used.

[0036] The display device of this embodiment has a function of detecting light by using a light receiving device.

[0037] When the light receiving device is used as an image sensor, the display device of the present embodiment is For example, the display device of the present embodiment can capture an image using a scanner. It can be used as:

[0038] For example, by using an image sensor to acquire data such as a fingerprint, palm print, or iris. That is, the display device of the present embodiment can incorporate a biometric authentication sensor. By incorporating a biometric authentication sensor in the display device, it is possible to provide a biometric authentication sensor separately from the display device. Compared to the case where a filter is provided, the number of parts in the electronic device can be reduced, and the electronic device can be made smaller and lighter. It is possible to achieve this.

[0039] In addition, the image sensor can be used to record information such as the user's facial expression, eye movement, or changes in pupil diameter. By analyzing the data, the user's physical and mental information can be obtained. Based on this information, the display and / or audio output contents can be changed. By doing so, for example, it will be possible to develop devices for VR (Virtual Reality) and AR (Au Equipment for Enhanced Reality or Mixed Reality ) devices, it is possible to ensure that users can use the devices safely.

[0040] In addition, when the light receiving device is used as a touch sensor, the display device of the present embodiment The chair can be used to detect the proximity or contact of an object.

[0041] As the light receiving device, for example, a pn-type or pin-type photodiode is used. The light-receiving device is a photoelectric converter that detects the light incident on the device and generates an electric charge. It functions as a charge transfer device, and the amount of charge generated is determined based on the amount of light incident on it.

[0042] In particular, an organic photodiode having a layer containing an organic compound is used as the light receiving device. It is preferable that the organic photodiode is thin, lightweight, and large in area. In addition, since there is a high degree of freedom in shape and design, the present invention can be applied to a variety of display devices.

[0043] In one embodiment of the present invention, an organic EL device is used as the light-emitting device and a An organic photodiode is used. The organic EL device and the organic photodiode are made on the same substrate. Therefore, it is possible to form an organic film on a display device using an organic EL device. A photodiode can be built in.

[0044] When trying to create all the layers that make up an OLED device and an organic photodiode, Organic photodiodes have the same structure as organic EL devices. Since there are many layers that can be shared, layers that can be shared can be deposited together, reducing the number of deposition processes. In addition, even if the number of film formations is the same, film formation can be suppressed only on some devices. By reducing the number of layers to be used, the effect of the misalignment of the deposition pattern can be reduced. Reduce the effect of dust (including tiny foreign objects called particles) adhering to the surface of the This makes it possible to increase the yield of manufacturing the display device. can.

[0045] For example, one of the pair of electrodes (common electrode) is shared by the light receiving device and the light emitting device. Also, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron It is preferable that at least one of the injection layers is a layer common to the light receiving device and the light emitting device. In addition, for example, the active layer of the light receiving device and the light emitting layer of the light emitting device are separately fabricated, and The layers other than the above may be the same in the light-emitting device and the light-receiving device. In addition, since the light receiving device and the light emitting device have a common layer, the number of film formations and the number of masks can be reduced. Therefore, the manufacturing process and manufacturing costs of the display device can be reduced.

[0046] The layers common to the light-receiving device and the light-emitting device have the same function as the light-receiving device. In this specification, the function of the light emitting device may be different from that of the light emitting device. For example, the hole injection layer is a layer that injects positive electrons into the hole in a light-emitting device. It functions as a hole injection layer and a hole transport layer in a light receiving device. The injection layer functions as an electron injection layer in a light-emitting device and as an electron transport layer in a light-receiving device. It functions as a transport layer.

[0047] A display device according to one embodiment of the present invention includes a light-receiving device and a light-emitting device in a display portion. The device has a first pixel electrode, an active layer, and a common electrode. The active layer includes a pixel electrode, a light-emitting layer, and a common electrode. The active layer is located on the first pixel electrode, and The light-emitting layer is located on the second pixel electrode and has a first organic compound. The common electrode is connected to the first pixel electrode through the active layer. The first pixel electrode has a portion overlapping the first electrode and a portion overlapping the second pixel electrode via the light emitting layer.

[0048] The light emitting device preferably further comprises a hole injection layer and an electron transport layer. The hole injection layer is in contact with the electrode that functions as an anode out of the second pixel electrode and the common electrode, and The electron transport layer includes a first compound and a second compound. The electron transport layer includes an electron transporting material. The first compound has an electron accepting property for the second compound. The HOMO level of the electron transport material is -5.7 eV or more and -5.4 eV or less. Electron mobility at 6.0 eV or more and the square root of the electric field strength [V / cm] is 600 is 1×10 -7 cm 2 / Vs or more 5×10 -5 cm 2 / Vs or less.

[0049] Alternatively, the light-emitting device preferably further comprises an electron transport layer. The transport layer includes an electron transporting material and a first substance. The first substance may be a metal, a metal salt, or a The electron transport layer is a metal oxide or an organometallic complex. The electron transport layer comprises a first region, a second region, and The first region and the second region have different concentrations of the first substance. When the first region is located closer to the light emitting layer than the second region, the first region is In all the electron transporting materials, the concentration of the first substance is preferably high. .0 eV or more, and the electron mobility at the square root of the electric field strength [V / cm] is 600 1×10 -7 cm 2 / Vs or more 5×10 -5 cm 2 It is preferable that the value is equal to or less than / Vs.

[0050] In the light-emitting device according to one embodiment of the present invention, holes are easily injected into the light-emitting layer, and electrons are easily injected into the light-emitting layer. This structure is such that holes are easily injected from the anode side, and the current from the cathode side to the light-emitting layer is small. By suppressing the amount of injected electrons, it is possible to prevent the light-emitting layer from becoming in an electron-excess state. As time passes, electrons are injected into the light-emitting layer, causing the brightness to increase. Initial deterioration can be offset by increasing the temperature. Initial deterioration is suppressed, resulting in a very long operating life. By using a light-emitting device, reliability can be improved. The light emitting device used in the display device will be described in detail in the second embodiment.

[0051] In the display surface of the display device according to one embodiment of the present invention, light emitted from the light-emitting device is extracted, and The light that is irradiated to the light receiving device passes through the light receiving device. It is preferable that the light-emitting device has a light-shielding layer on the display surface side. The light is taken out of the display device through an opening (or an area where no light-shielding layer is provided). It is preferable that the light receiving device has an opening in the light shielding layer (or an area where the light shielding layer is not provided). It is preferable that the light is irradiated through a light receiving portion (region).

[0052] The light receiving device detects light emitted by the light emitting device and reflected by the object. The light emitted from the light emitting device is reflected in the display device and enters the light receiving device without passing through the object. Such stray light may become noise during light detection, and the S / N ratio (S This is a factor that reduces the signal-to-noise ratio. By providing a light-shielding layer on the display surface side of the light-receiving device, the effects of stray light can be suppressed. This makes it possible to reduce noise and increase the sensitivity of sensors that use light-receiving devices. Cut.

[0053] The closer the light-shielding layer is to the light-emitting device, the more it can suppress stray light from the light-emitting device in the display device. This increases the sensitivity of the sensor. The lower the angle, the more the contrast loss and chromaticity change are suppressed when the display device is viewed from an oblique angle. This improves the viewing angle characteristics of the display. The farther away the object is, the narrower the area of ​​the imaging range of the light receiving device can be, and the higher the imaging resolution. The degree can be increased.

[0054] Therefore, in one aspect of the present invention, the distance from the light-shielding layer to the light-receiving device and the distance from the light-shielding layer to the light-emitting device are A structure (e.g. a resin layer) is placed on the surface on which the light-shielding layer is formed so that there is a difference between the distance to the device and the By adjusting the layout and thickness of the structure, This allows the distance from the light-shielding layer to the light-emitting device to be increased and the distance from the light-shielding layer to the light-emitting device to be reduced. This reduces sensor noise, increases image resolution, and reduces viewing angle dependency of the display. Therefore, both the display quality and the image quality of the display device can be improved. can be increased.

[0055] Specifically, the display device according to one embodiment of the present invention further includes a resin layer, a light-shielding layer, and a substrate. It is preferable that the resin layer and the light-shielding layer are each located between the common electrode and the substrate. is preferred.

[0056] At least a part of the light emitted by the light emitting device is extracted to the outside of the substrate through the resin layer. At least a part of the light that passes through the substrate is incident on the light-receiving device without passing through the resin layer. For example, the resin layer has an opening that overlaps with the light receiving device. It is placed like an island, overlapping with the chair.

[0057] The resin layer is provided at a position overlapping the light-emitting device and is not provided at a position overlapping the light-receiving device. Therefore, the distance from the light-shielding layer to the light-emitting device is This makes it possible to improve both the display quality and the image quality of the display device. can be increased.

[0058] 1A to 1D show cross-sectional views of a display device according to one embodiment of the present invention.

[0059] The display device 50A shown in FIG. 1A has a light receiving device between a substrate 51 and a substrate 59. and layer 57 having a light emitting device.

[0060] The display device 50B shown in FIG. 1B has a light receiving device between the substrate 51 and the substrate 59. layer 53 having a gate insulating layer, layer 55 having transistors, and layer 57 having light emitting devices.

[0061] The display device 50A and the display device 50B emit red (R), The configuration is such that green (G) and blue (B) light is emitted.

[0062] A display device according to one embodiment of the present invention has a plurality of pixels arranged in a matrix. A pixel has one or more subpixels. A subpixel has one light-emitting device. For example, For example, a pixel may have three sub-pixels (three colors: R, G, and B, or yellow (Y), cyan (Y), and blue (C). (C), magenta (M), or a four-subpixel configuration (R, G, , B, and white (W), or R, G, B, and Y). The pixel includes a light receiving device. The light receiving device may be provided in every pixel. It may be provided in some pixels. Also, one pixel may have multiple light receiving devices. This is also fine.

[0063] The transistor-containing layer 55 includes a first transistor and a second transistor. Preferably, the first transistor is electrically connected to the light receiving device. The transistor is electrically connected to the light emitting device.

[0064] The display device according to one embodiment of the present invention has a function of detecting an object such as a finger touching the display device. For example, as shown in FIG. 1(C), in the layer 57 having the light-emitting device, The light emitted by the light emitting device is reflected by the finger 52 touching the display device 50B and received by the finger 52. The light-receiving device in the layer 53 having the optical device detects the reflected light. It is possible to detect that a finger 52 has touched the display device 50B.

[0065] The display device according to one embodiment of the present invention is adjacent to the display device 50B as shown in FIG. It may also have the ability to detect or image (non-contact) objects.

[0066] [Pixels] An example of a pixel is shown in FIG. 1(E) to FIG. 1(I).

[0067] The pixel shown in FIG. 1(E) to FIG. 1(G) is made up of three sub-pixels (three light-emitting devices) of R, G, and B. ) and a light receiving device PD. FIG. 1(E) shows three This is an example in which sub-pixels and light receiving devices PD are arranged. FIG. 1(F) shows three sub-pixels arranged in a horizontal row. FIG. 1(G) shows an example in which three sub-pixels and a light receiving device PD are arranged in a horizontal row. In this example, the sub-pixels are arranged, and the light receiving device PD is arranged below them. The pixels shown in Fig. 1(E) to (G) each have three sub-pixels used for display and one sub-pixel used for light detection. It can also be said that the pixel is composed of one subpixel having a pixel pixel and four subpixels having a pixel pixel pixel.

[0068] The pixel shown in FIG. 1(H) consists of four sub-pixels (four light-emitting devices) for R, G, B, and W, and a receiving and an optical device PD.

[0069] The pixel shown in Figure 1(I) consists of three sub-pixels, R, G, and B, and an infrared light-emitting device I. R and a light receiving device PD. At this time, the light receiving device PD detects infrared light. It is preferable that the light receiving device PD has a function of detecting both visible light and infrared light. Depending on the application of the sensor, the wavelength of light detected by the light receiving device PD may be can be determined.

[0070] Hereinafter, a light-emitting device and a display device according to one embodiment of the present invention will be described with reference to FIGS. The detailed configuration of the light receiving device will be described.

[0071] The display device according to one embodiment of the present invention emits light in a direction opposite to a substrate on which a light-emitting device is formed. The top-emission type emits light toward the substrate on which the light-emitting device is formed. It can be either a one-emission type, which emits light from both sides, or a dual-emission type, which emits light from both sides. .

[0072] 2 to 12, a top emission type display device will be described as an example.

[0073] In this embodiment, a light emitting device that emits visible light and a light receiving device that detects visible light are mainly used. A display device having a display device and a display device that further emits infrared light is described. The light receiving device may have a configuration for detecting infrared light, or Alternatively, it may be configured to detect both visible light and infrared light.

[0074] [Display device 10] FIG. 2 shows a cross-sectional view of the display device 10.

[0075] The display device 10 includes a light receiving device 110 and a light emitting device 190 .

[0076] The light-emitting device 190 includes a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, and a buffer layer The light-emitting layer 193 includes an organic compound. The chair 190 has a function of emitting visible light. The display device 10 further emits infrared light. In the present embodiment, the pixel electrode 19 may have a light-emitting device having a function of emitting light. The case where the common electrode 115 functions as a cathode and the common electrode 116 functions as an anode will be described as an example. .

[0077] The light receiving device 110 includes a pixel electrode 181, a buffer layer 182, an active layer 183, and a buffer layer The active layer 183 includes an organic compound. The light receiving device 110 has a function of detecting visible light. In the present embodiment, the light emitting device 190 is aligned with the light emitting device 190. In addition, the pixel electrode 181 functions as an anode, and the common electrode 115 functions as a cathode. That is, the light receiving device 110 is disposed between the pixel electrode 181 and the common electrode 115. By applying a reverse bias to the light receiving device 110, the display device 10 It detects light, generates an electric charge, and can extract it as a current.

[0078] Pixel electrode 181, pixel electrode 191, buffer layer 182, buffer layer 192, active layer 183 , the light-emitting layer 193, the buffer layer 184, the buffer layer 194, and the common electrode 115 are In addition, it may have a single layer structure or a laminated structure.

[0079] The pixel electrode 181 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 181 can be formed using the same material and in the same process. The ends of the pixel electrodes 191 and the pixel electrodes 192 are covered with partition walls 216. The electrode 181 and the pixel electrode 191 are electrically insulated from each other by a partition wall 216 (electrically (also called "practically separated").

[0080] An organic insulating film is suitable for the partition wall 216. Materials that can be used for the organic insulating film include Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide a Amido resin, siloxane resin, benzocyclobutene resin, phenolic resin, and their derivatives The partition wall 216 is a layer that transmits visible light. Details will be described later. However, instead of the partition 216, a partition 217 that blocks visible light may be provided.

[0081] The buffer layer 182 is located on the pixel electrode 181. The active layer 183 is The active layer 183 overlaps with the pixel electrode 181 via a buffer layer 184. The buffer layer 184 is located on the active layer 183. The active layer 183 overlaps with the common electrode 115 via the buffer layer 184. 2 may have a hole transport layer. Buffer layer 184 may have an electron transport layer. can be done.

[0082] The buffer layer 192 is located on the pixel electrode 191. The light-emitting layer 193 is The light-emitting layer 193 overlaps with the pixel electrode 191 via a buffer layer 194. The buffer layer 194 is located on the light-emitting layer 193. The light-emitting layer 193 overlaps with the common electrode 115 via the buffer layer 194. 2 may have one or both of a hole injection layer and a hole transport layer. 94 may include one or both of an electron injection layer and an electron transport layer.

[0083] The common electrode 115 is a layer shared by the light receiving device 110 and the light emitting device 190. do.

[0084] The light receiving device 110 and the light emitting device 190 have a pair of electrodes made of the same material and have the same thickness. This reduces the manufacturing cost of the display device and simplifies the manufacturing process. can.

[0085] The display device 10 includes a pair of substrates (substrate 151 and substrate 152) and a light receiving device 110 between them. It includes a light emitting device 190, a transistor 41, and a transistor 42, etc.

[0086] In the light receiving device 110, the pixel electrodes 181 and the common electrode 115 are located between the pixel electrodes 181 and the common electrode 115. The buffer layer 182, the active layer 183, and the buffer layer 184 are organic layers (containing organic compounds). The pixel electrode 181 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light. In the case of a configuration for detecting external light, the common electrode 115 has a function of transmitting infrared light. In addition, it is preferable that the pixel electrode 181 has a function of reflecting infrared light.

[0087] The light receiving device 110 has a function of detecting light. A photoelectric conversion device that receives light 22 incident from outside the display device 10 and converts it into an electrical signal. The light 22 may be light emitted by the light emitting device 190 and reflected by an object. Alternatively, the light 22 may be incident on the light receiving device 110 via a lens, which will be described later. .

[0088] In the light-emitting device 190, the pixel electrodes 191 and the common electrode 115 are disposed between the pixel electrodes 191 and the common electrode 115. The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 are collectively referred to as an EL layer. The EL layer has at least a light-emitting layer. The pixel electrode 191 reflects visible light. The common electrode 115 preferably has a function of transmitting visible light. In addition, when the display device 10 has a configuration including a light emitting device that emits infrared light, The pixel electrode 115 has a function of transmitting infrared light. Furthermore, the pixel electrode 191 has a function of reflecting infrared light. It is preferable that the ion exchange reaction has a function of

[0089] The light-emitting device of the display device of the present embodiment includes a micro-optical resonator (microcavity). Therefore, the light-emitting device preferably has a pair of electrodes. One of the electrodes has a semi-transparent and semi-reflective electrode that is transparent and reflective to visible light. It is preferable that the other electrode has a reflectivity to visible light (reflective electrode). It is preferable that the light-emitting device has a microcavity structure, so that the light-emitting layer can be easily obtained. The emitted light can be made to resonate between the two electrodes, thereby enhancing the light emitted from the light-emitting device.

[0090] The semi-transparent / semi-reflective electrode is a combination of a reflective electrode and an electrode that is transparent to visible light (transparent electrode). In this specification and the like, they are referred to as semi-transparent and semi-reflective, respectively. The reflective electrode, which functions as a part of the reflective electrode, is called a pixel electrode or a common electrode, and the transparent electrode is called a light-emitting electrode. Although it is sometimes written as an optical adjustment layer, the transparent electrode (optical adjustment layer) is also used as a pixel electrode or a common electrode. It can be said that it has all the functions.

[0091] The light transmittance of the transparent electrode is 40% or more. For example, a light-emitting device uses visible light (wavelength It is preferable to use an electrode having a transmittance of 40% or more for light having a wavelength of 400 nm or more and less than 750 nm. The reflectance of the semi-transmissive / semi-reflective electrode to visible light is preferably 10% or more and 95% or less. The reflectance of the reflective electrode for visible light is 40% or more and 100% or less. The resistivity of these electrodes is 1×1 0 -2 It is preferable that the display device is a light-emitting device that emits near-infrared light. In this case, the transmittance of near-infrared light (light with wavelengths of 750 nm to 1300 nm) of these electrodes is It is preferable that the reflectance is also within the above numerical range.

[0092] The buffer layer 192 or the buffer layer 194 may have a function as an optical adjustment layer. By making the thickness of the buffer layer 192 or the buffer layer 194 different, In this case, light of a specific color can be intensified and extracted. In the case of a laminated structure of a reflective electrode and a transparent electrode, the optical distance between a pair of electrodes is the distance between the pair of reflective electrodes. Indicates the optical distance between the poles.

[0093] The light emitting device 190 has a function of emitting visible light. By applying a voltage between the pixel electrode 191 and the common electrode 115, light is emitted toward the substrate 152. (See Emission 21.)

[0094] The light-emitting layer 193 is preferably formed so as not to overlap the light-receiving device 110. This can prevent the light emitting layer 193 from absorbing the light 22, and the light 22 is not irradiated to the light receiving device 110. The amount of light emitted can be increased.

[0095] The pixel electrode 181 is connected to the transistor 41 through an opening provided in the insulating layer 214. It is electrically connected to the source or drain.

[0096] The pixel electrode 191 is connected to the transistor 42 through an opening provided in the insulating layer 214. The transistor 42 is electrically connected to the source or drain of the light emitting device 190. It has the function of controlling the drive of the

[0097] The transistor 41 and the transistor 42 are in contact with each other on the same layer (substrate 151 in FIG. 2). There are.

[0098] At least a part of the circuit electrically connected to the light receiving device 110 is a light emitting device 190. It is preferable that the circuit is formed of the same material and in the same process as the circuit to which it is electrically connected. This makes it possible to reduce the thickness of the display device compared to when the two circuits are formed separately. In addition, the manufacturing process can be simplified.

[0099] The light receiving device 110 and the light emitting device 190 are each covered with a protective layer 116. In FIG. 2, the protective layer 116 is provided on and in contact with the common electrode 115. The protective layer 116 prevents the light receiving device 110 and the light emitting device 190 from being exposed to water, etc. The intrusion of impurities is suppressed, and the reliability of the light receiving device 110 and the light emitting device 190 is improved. In addition, the adhesive layer 142 adheres the protective layer 116 to the substrate 152. They are combined.

[0100] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 158 is The light-emitting device 190 and the light-receiving device 110 have openings at positions overlapping each other. In this specification and the like, the position overlapping with the light-emitting device 190 specifically means the position It refers to a position overlapping with the light emitting region of the optical device 190. Similarly, it refers to a position overlapping with the light receiving device 110. Specifically, the position refers to a position that overlaps with the light receiving region of the light receiving device 110.

[0101] Here, the light emitted by the light emitting device 190 is received by the light receiving device 110 after being reflected by the object. However, the light emitted by the light emitting device 190 is reflected within the display device 10 and is not detected by the object. In some cases, the light may enter the light receiving device 110 without passing through the light shielding layer 158. For example, when the light-shielding layer 158 is not provided, the influence of stray light can be suppressed. In this case, light 23 emitted by the light-emitting device 190 is reflected by the substrate 152, and the reflected light 24 is received by the light-receiving device. By providing the light shielding layer 158, the reflected light 24 may be incident on the light receiving device 110. This can reduce noise and prevent light from being incident on the light receiving device 110. The sensitivity of the sensor using 110 can be increased.

[0102] The light-shielding layer 158 may be made of a material that blocks light emitted from the light-emitting device. The layer 158 preferably absorbs visible light. For example, a metal material may be used as the light-shielding layer 158. Or, black using a resin material containing a pigment (carbon black, etc.) or a dye. The light-shielding layer 158 can be formed as a matrix. The color filter may have a laminated structure of a white filter and a blue color filter.

[0103] [Display device 10A] FIG. 3A shows a cross-sectional view of a display device 10A. Description of the same configuration as the display device described above may be omitted.

[0104] The display device 10A differs from the display device 10 in that a resin layer 159 is provided.

[0105] The resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. The light receiving device 110 is provided at a position overlapping the optical device 190. I can't.

[0106] The resin layer 159 is disposed at a position overlapping the light emitting device 190 as shown in FIG. The light receiving device 110 is provided with an opening 159p at a position overlapping the light receiving device 110. Alternatively, the resin layer 159 may be, for example, a light-emitting device, as shown in FIG. 190 and is provided in an island shape at a position overlapping the light receiving device 110. It is possible to provide a configuration in which

[0107] A light-shielding layer 158 is formed on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer 158 is provided at a position where it overlaps the light-emitting device 190 and at a position where it overlaps the light-receiving device 190. It has an opening at a position where it overlaps with chair 110.

[0108] For example, the light blocking layer 158 transmits light through the resin layer 159 and is reflected by the surface of the substrate 152 on the substrate 151 side. The light blocking layer 158 can absorb the stray light 23 a before it reaches the resin layer 159. This allows the stray light 23b to be absorbed. Therefore, the noise can be reduced, and the sensor using the light receiving device 110 can be In particular, the light shielding layer 158 is located close to the light emitting device 190. In this case, it is preferable that the light-shielding layer 158 is located in the vicinity of the light-emitting device 19 in order to reduce stray light. If it is located close to 0, the viewing angle dependency of the display can be suppressed, from the viewpoint of improving the display quality. It is also preferred from the perspective.

[0109] In addition, the light-shielding layer 158 is provided to control the range in which the light-receiving device 110 detects light. When the light-shielding layer 158 is located away from the light-receiving device 110, the imaging range is This narrows the aperture, allowing for improved imaging resolution.

[0110] When the resin layer 159 has an opening, the light-shielding layer 158 covers at least a part of the opening and the It is preferable to cover at least a part of the side surface of the resin layer 159 exposed in the opening.

[0111] When the resin layer 159 is provided in an island shape, the light blocking layer 158 is formed on at least a portion of the side surface of the resin layer 159. It is preferable that the insulating layer 10 covers at least a part of the insulating layer 10 .

[0112] In this way, the light-shielding layer 158 is provided along the shape of the resin layer 159. to the light-emitting device 190 (specifically, the light-emitting area of ​​the light-emitting device 190) is From the light-shielding layer 158 to the light-receiving device 110 (specifically, the light-receiving region of the light-receiving device 110) This allows the sensor noise to be reduced while still improving the image resolution. It is therefore possible to improve the image quality and suppress the viewing angle dependency of the display. This makes it possible to improve both the display quality and the imaging quality.

[0113] The resin layer 159 is a layer that transmits light emitted from the light emitting device 190. Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide a Amido resin, siloxane resin, benzocyclobutene resin, phenolic resin, and their derivatives The structure provided between the substrate 152 and the light-shielding layer 158 is The insulating layer is not limited to a resin layer, and an inorganic insulating film or the like may be used. There is a difference between the distance from the light-receiving layer to the light-emitting device and the distance from the light-shielding layer to the light-emitting device. Since an organic insulating film such as a resin can be easily formed thick, it is suitable for the structure. It is.

[0114] The distance from the light-shielding layer 158 to the light-receiving device 110 and the distance from the light-shielding layer 158 to the light-emitting device 19 0, for example, the end of the light-shielding layer 158 on the light-receiving device 110 side is compared with the shortest distance L1 from the end of the light-shielding layer 158 on the light-emitting device 190 side to the common electrode 115, The shortest distance L2 from the portion to the common electrode 115 can be used. In all, the shortest distance L2 is short, so that stray light from the light-emitting device 190 is suppressed and the light-receiving device The sensitivity of the sensor using the sensor 110 can be improved. In addition, the viewing angle dependency of the display can be suppressed. Since the shortest distance L1 is longer than the shortest distance L2, the light receiving device 1 The imaging range of the imaging lens 10 can be narrowed, and the imaging resolution can be increased.

[0115] In addition, the adhesive layer 142 has a portion overlapping the light-receiving device 190, which is smaller than the portion overlapping the light-emitting device 190. Even if the portion overlapping with 110 is made thick, the distance from the light-shielding layer 158 to the light-receiving device 110 can be reduced. and the distance from the light-shielding layer 158 to the light-emitting device 190. can be done.

[0116] [Display device 10B] FIG. 4A shows a cross-sectional view of the display device 10B.

[0117] The display device 10B does not have the buffer layer 182 and the buffer layer 192, but has the common layer 112. In this respect, the display device 10 differs from the display device 10A.

[0118] The common layer 112 is located on the partition 216 , the pixel electrode 181 , and the pixel electrode 191 . The common layer 112 is a layer that is used in common by the light receiving device 110 and the light emitting device 190. The common layer 112 may have a single-layer structure or a multi-layer structure.

[0119] The common layer 112 may be, for example, a hole injection layer or a hole transport layer. The common layer 112 can be used to provide functions in the light-emitting device 190 and the light-receiving device 110. For example, when the common layer 112 has a hole injection layer, The hole injection layer functions as a hole injection layer in the light-emitting device 190 and as a hole injection layer in the light-receiving device At 110 it functions as a hole transport layer.

[0120] At least a part of the layers other than the active layer and the light-emitting layer is alternated between the light-receiving device and the light-emitting device. By using a common structure for all the display devices, the manufacturing process of the display device can be reduced, which is preferable.

[0121] [Display device 10C] FIG. 4B shows a cross-sectional view of the display device 10C.

[0122] The display device 10C does not have the buffer layer 184 and the buffer layer 194, but has the common layer 114. In this respect, the display device 10 differs from the display device 10A.

[0123] The common layer 114 is located on the partition 216, the active layer 183, and the light-emitting layer 193. The layer 114 is a layer that is common to the light receiving device 110 and the light emitting device 190 . The common layer 114 may have a single-layer structure or a laminated structure.

[0124] The common layer 114 may be, for example, an electron injection layer or an electron transport layer. The common layer 114 can be used to provide functions in the light-emitting device 190 and the light-receiving device 110. For example, when the common layer 114 has an electron injection layer, The electron injection layer functions as an electron injection layer in the light-emitting device 190 and as an electron injection layer in the light-receiving device At 110 it functions as an electron transport layer.

[0125] At least a part of the layers other than the active layer and the light-emitting layer is alternated between the light-receiving device and the light-emitting device. By using a common structure for all the display devices, the manufacturing process of the display device can be reduced, which is preferable.

[0126] [Display device 10D] FIG. 5A shows a cross-sectional view of a display device 10D.

[0127] The display device 10D includes a buffer layer 182, a buffer layer 192, a buffer layer 184, and a buffer The display device 10A is different from the display device 10A in that it does not have a layer 194 but has a common layer 112 and a common layer 114. different.

[0128] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light receiving device 110. The light receiving device 110 is configured such that the layers other than the active layer 183 are the same as the light emitting device 190 (EL device). ) can be formed in the same structure as the light-emitting device 190. By simply adding a step of depositing the layer 183, the light receiving device can be formed in parallel with the formation of the light emitting device 190. In addition, the light emitting device 190 and the light receiving device 110 can be formed. Therefore, the number of manufacturing steps can be reduced without significantly increasing. In this case, the light receiving device 110 can be built into the display device.

[0129] In the display device 10D, the active layer 183 of the light receiving device 110 and the light emitting layer of the light emitting device 190 The light receiving device 110 and the light emitting device 190 have a common structure except for the layer 193. However, the configuration of the light receiving device 110 and the light emitting device 190 is not limited to this. The light receiving device 110 and the light emitting device 190 are formed of an active layer 183 and a light emitting layer 193. In addition, layers that are made separately from each other may be provided (the above-mentioned display devices 10A, 10B, 10C). The light receiving device 110 and the light emitting device 190 share a common layer (a common It is preferable that the film has at least one layer. This makes it possible to achieve the above without significantly increasing the number of manufacturing steps. The light receiving device 110 may be built into the display device.

[0130] [Display device 10E] FIG. 5B shows a cross-sectional view of the display device 10E.

[0131] The display device 10E does not have the substrate 151 and the substrate 152, but has the substrates 153, 154, and adhesive. It differs from the display device 10D in that it has a layer 155 and an insulating layer 212.

[0132] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. It is attached to the protective layer 116 by an adhesive layer 142 .

[0133] The display device 10E includes an insulating layer 212, a transistor 41, and a transistor The star 42, the light receiving device 110, the light emitting device 190, etc. are transposed onto the substrate 153. The substrate 153 and the substrate 154 are each flexible. This makes it possible to improve the flexibility of the display device 10E. For example, It is preferable that the substrate 153 and the substrate 154 are each made of a resin.

[0134] The substrates 153 and 154 are each made of polyethylene terephthalate (PET). Polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile resins Grease, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid amide, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide Imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polyp Propylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose Nanofibers or the like can be used. Alternatively, glass having a sufficient thickness to provide flexibility may be used.

[0135] For the substrate of the display device of this embodiment mode, a film having high optical isotropy may be used. Triacetyl cellulose (TAC, cellulose triacetate) is an example of a film with high optical isotropy. (also called acetate) film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) film and acrylic film.

[0136] [Display device 10F, 10G, 10H] FIG. 5C shows a cross-sectional view of the display device 10F. FIG. 6A shows a cross-sectional view of the display device 10G. FIG. 6B shows a cross-sectional view of the display device 10H.

[0137] The display device 10F includes a lens 149 in addition to the configuration of the display device 10D.

[0138] The display device of the present embodiment may have a lens 149. The lens 149 is a light receiving device. In the display device 10F, the lens 149 is disposed on the substrate 110. The lens 149 of the display device 10F is disposed on the substrate 151 side. has a convex surface.

[0139] When both the light-shielding layer 158 and the lens 149 are formed on the same surface of the substrate 152, the order of formation is as follows: In FIG. 5C, an example in which the lens 149 is formed first is shown, but it is also possible to form the light-shielding layer 158 first. In FIG. 5C, the end of the lens 149 is covered with a light-shielding layer 158. is.

[0140] The display device 10F is configured such that light 22 enters the light receiving device 110 via a lens 149. When the lens 149 is provided, the light receiving device 1 is more accurate than when the lens 149 is not provided. The imaging range of the light receiving device 10 can be narrowed, and the imaging range of the light receiving device 110 overlaps with that of the adjacent light receiving device 110. This makes it possible to capture clear images with less blurring. If the imaging range of the device 110 is the same, the imaging range of the device 110 with the lens 149 is different from that of the device 110 without the lens 149. In FIG. 5C, the size of the pinhole (the light shielding portion overlapping with the light receiving device 110) is smaller than that in the case without the pinhole. (corresponding to the size of the aperture in layer 158) can be made larger. By providing the light receiving device 110 with the light receiving element 49, the amount of light incident on the light receiving device 110 can be increased.

[0141] In the display device 10G shown in FIG. 6A, similarly to the display device 10F, the light 22 passes through a lens 149. In this configuration, the light is incident on the light receiving device 110 via a filter.

[0142] In the display device 10G, a lens 149 is provided in contact with the upper surface of the protective layer 116. The lens 149 of the device 10G has a convex surface facing the substrate 152 side.

[0143] In the display device 10H shown in FIG. 6(B), a lens array 146 is provided on the display surface side of the substrate 152. The lenses of the lens array 146 are arranged at positions overlapping the light receiving device 110. A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. It is preferred.

[0144] The method for forming the lenses used in the display device of the present embodiment is to form a lens on a substrate or a light receiving device. A lens such as a microlens may be formed directly on the substrate, or a microlens may be formed separately. A lens array such as a lens array may be attached to the substrate.

[0145] The lens preferably has a refractive index of 1.3 to 2.5. For example, the insulating layer 10 may be formed using a material containing a resin. The lens can be made of a material containing at least one of an oxide and a sulfide. It can be used in lenses.

[0146] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, resins containing aromatic rings, Resins containing sulfur and resins containing sulfur can be used for the lenses. Materials containing nanoparticles of materials with higher refractive indexes can be used for lenses. Alternatively, zirconium oxide or the like can be used for the nanoparticles.

[0147] Also, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, Tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin The lens can be made of a material such as a material containing indium, gallium, and zinc. Alternatively, zinc sulfide or the like can be used for the lenses.

[0148] [Display device 10J] FIG. 6C shows a cross-sectional view of the display device 10J.

[0149] The display device 10J does not have a partition wall 216 that transmits visible light, but has a partition wall 217 that blocks visible light. The display device 10 differs from the display device 10D in that respect.

[0150] The partition 217 preferably absorbs the light emitted by the light emitting device 190. For example, a black matrix is ​​formed using a resin material containing a pigment or a dye. In addition, by using a brown resist material, the partition wall 21 can be formed with a colored insulating layer. 7 can be configured.

[0151] In the display device 10D (FIG. 5A), the light emitted by the light emitting device 190 is reflected by the substrate 152. The light may be reflected by the partition wall 216 and enter the light receiving device 110. Light emitted by the light emitting device 190 passes through the partition wall 216 and is reflected by a transistor, wiring, or the like. As a result, reflected light may be incident on the light receiving device 110. The light is absorbed by the partition 217, and the reflected light is not reflected by the light receiving device 110. This can reduce noise and improve the usability of the light receiving device 110. The sensitivity of the sensor can be increased.

[0152] The partition 217 preferably absorbs at least the wavelength of light detected by the light receiving device 110. For example, the light receiving device 110 detects green light emitted by the light emitting device 190. In this case, it is preferable that the partition 217 absorbs at least green light. 7, but with a red color filter, it can absorb green light and receive reflected light. This can prevent the light from entering the device 110.

[0153] The light blocking layer 158 can absorb most of the stray light 23b before it reaches the resin layer 159. A part of the stray light 23b may be reflected and enter the partition 217. In the case where the stray light 23b is configured to absorb the stray light, it is possible to prevent the stray light 23b from being incident on a transistor, wiring, or the like. Therefore, it is possible to prevent the stray light 23c from reaching the light receiving device 110. The more times the stray light 23b hits the light blocking layer 158 and the partition wall 217, the greater the amount of light that is absorbed. , and the amount of stray light 23c reaching the light receiving device 110 can be significantly reduced. If the resin layer 159 is thick, the stray light 23b may be blocked by the light blocking layer 158 and the partition wall 217. This is preferable because it increases the number of hits.

[0154] In addition, the partition 217 absorbs light, so that the light directly enters the partition 217 from the light-emitting device 190. The stray light 23d incident thereon can be absorbed by the partition wall 217. By providing the wall 217, the amount of stray light entering the light receiving device 110 can be reduced.

[0155] [Display device 10K] 7A shows a top view of the display device 10K. FIG. 8A shows a cross-sectional view taken along the dashed line A1-A2 in FIG. A cross-sectional view of section 4 is shown.

[0156] In FIG. 7A, the area enclosed by the dotted line frame corresponds to one pixel. device 110, a red light emitting device 190R, a green light emitting device 190G, and a blue The light emitting device 190B has a different color.

[0157] The top surface shapes of the light receiving device 110 and the light emitting devices 190R, 190G, and 190B are not particularly limited. The pixel layout shown in FIG. 7(A) is of the hexagonal close-packed type. By adopting a hexagonal close-packed layout, the light receiving device 110 and the light emitting device 19 This is preferable because it is possible to increase the aperture ratio of 0R, 190G, and 190. The light receiving area of ​​device 110 is rectangular, and light emitting devices 190R, 190G, and 190B Each of the light emitting regions is hexagonal.

[0158] When viewed from above (or in a plan view), the light receiving device 110 is formed of a frame-shaped light blocking layer 219a. The light receiving device 110 is completely surrounded by the light shielding layer 219a. This can prevent stray light from entering the light receiving device 110. may have gaps (also called gaps, broken parts, or missing parts) .

[0159] When viewed from above, between the green light-emitting device 190G and the blue light-emitting device 190B , a spacer 219b is provided.

[0160] As shown in FIG. 7B and FIG. 8A, the display device 10K includes a light receiving device 110, a red A first light emitting device 190R, a green light emitting device 190G, and a blue light emitting device 19 Has 0B.

[0161] The light-emitting device 190R includes a pixel electrode 191R, a common layer 112, a light-emitting layer 193R, and a common layer 1 The light-emitting layer 193R has an organic compound that emits red light 21R. The light emitting device 190R has a function of emitting red light.

[0162] The light-emitting device 190G includes a pixel electrode 191G, a common layer 112, a light-emitting layer 193G, and a common layer 1 The light-emitting layer 193G has an organic compound that emits green light 21G. The light emitting device 190G has a function of emitting green light.

[0163] The light-emitting device 190B includes a pixel electrode 191B, a common layer 112, a light-emitting layer 193B, and a common layer 1 The light-emitting layer 193B has an organic compound that emits blue light 21B. The light emitting device 190B has a function of emitting blue light.

[0164] The light receiving device 110 includes a pixel electrode 181, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115. The active layer 183 includes an organic compound. 0 has the function of detecting visible light.

[0165] The display device 10K includes a light receiving device 110 between a pair of substrates (substrate 151 and substrate 152). , light emitting device 190R, light emitting device 190G, light emitting device 190B, transistor 41, a transistor 42R, a transistor 42G, and a transistor 42B.

[0166] The ends of the pixel electrodes 181, 191R, 191G, and 191B are separated by partition walls 216. It is covered with

[0167] The pixel electrode 181 is connected to the transistor 41 through an opening provided in the insulating layer 214. The pixel electrode 191R is provided on the insulating layer 214 and is electrically connected to the source or drain. The source or drain of the transistor 42R is electrically connected through the opening. Similarly, the pixel electrode 191G is connected to the transistor through an opening provided in the insulating layer 214. The pixel electrode 1 is electrically connected to the source or drain of the transistor 42G. 91B is connected to the source of the transistor 42B through an opening in the insulating layer 214. Or, it is electrically connected to the drain.

[0168] The light receiving device 110 and the light emitting devices 190R, 190G, and 190B are each It is covered by layer 116.

[0169] A resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. The resin layer 159 is The light receiving device 11 is provided at a position overlapping the light emitting devices 190R, 190G, and 190B. It cannot be set at a position that overlaps with 0.

[0170] A light-shielding layer 158 is formed on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer 158 is provided to shield the light-emitting devices 190R, 190G, and 190B. It has openings at positions overlapping with these and at a position overlapping with the light receiving device 110 .

[0171] In the top view, the partition wall 216 has a frame-shaped opening. 216 has an opening between the light receiving device 110 and the light emitting device 190R. The light-shielding layer 219a is provided to cover the opening. It is preferable that the light-shielding layer 219 covers the opening and the side surface of the partition wall 216 exposed at the opening. It is further preferable that a covers at least a part of the upper surface of the partition wall 216 .

[0172] Alternatively, the partition wall 216 may not have an opening, and the light-shielding layer 219a may be provided on the partition wall 216. However, there is a possibility that stray light may pass through the partition 216 and enter the light-receiving device 110. An opening is provided in 216, and a light-shielding layer 219a is provided to fill the opening. Stray light transmitted through the partition 216 is absorbed by the light blocking layer 219a at the opening of the partition 216. This can prevent stray light from entering the light receiving device 110.

[0173] The light-shielding layer 219a preferably has a forward tapered shape. The films (common layer 112, common layer 114, common electrode 115, protective layer 116, etc.) provided on the ) can be improved in coverage.

[0174] The light-shielding layer 219a absorbs at least the wavelength of light detected by the light-receiving device 110. For example, it is preferable that the light receiving device 110 detects green light emitted by the light emitting device 190G. In this case, it is preferable that the light-shielding layer 219a absorbs at least green light. If the light-shielding layer 219a has a red color filter, it can absorb green light. Therefore, it is possible to prevent the reflected light from entering the light receiving device 110. Alternatively, the black matrix may be formed using a resin material containing a dye. The optical layer 219a includes a red color filter, a green color filter, and a blue color filter. Alternatively, the light-shielding layer 219a may be made of a brown resist material. A colored insulating layer may be formed by applying a coloring agent to the insulating layer.

[0175] For example, when the light receiving device 110 detects green light emitted by the light emitting device 190G, The light emitted by the light emitting device 190G is reflected by the substrate 152 and the partition wall 216. The light emitted by the light emitting device 190G may enter the optical device 110. The reflected light is transmitted through the light receiving element 216 and reflected by a transistor or wiring. In the display device 10K, the light may be incident on the light-shielding layer 158 and the light-shielding layer 219a. Thus, the light is absorbed, and the reflected light is prevented from entering the light receiving device 110. This reduces noise and improves the sensitivity of the sensor using the light receiving device 110. It can be improved.

[0176] For example, the light blocking layer 158 can absorb much of the stray light 23b before it reaches the resin layer 159. Furthermore, even if a part of the stray light 23b is reflected by the light-shielding layer 158, the light-shielding layer 219a can prevent the stray light 23b from being reflected by the light-shielding layer 158. By absorbing 3b, it is possible to prevent stray light 23b from being incident on a transistor, wiring, etc. Therefore, it is possible to prevent the stray light from reaching the light receiving device 110. The more times the light hits the light-shielding layers 158 and 219a, the more the amount of light absorbed. Therefore, the amount of stray light reaching the light receiving device 110 can be significantly reduced. If the thickness of 159 is large, the number of times that the stray light 23b hits the light shielding layer 158 and the light shielding layer 219a increases. If the resin layer 159 is thick, the light of each color can be prevented from penetrating through the light blocking layer 158. The distance to the light-emitting device is shortened, suppressing the viewing angle dependency of the display, improving the display quality. This is also preferable from the standpoint of improvement.

[0177] In addition, the light-shielding layer 219a absorbs light, so that light from the light-emitting device is directly absorbed by the light-shielding layer 219a. The incident stray light 23d can be absorbed by the light blocking layer 219a. In addition, by providing the light-shielding layer 219a, stray light incident on the light-receiving device 110 can be reduced. can be done.

[0178] In addition, the light-shielding layer 158 is provided to control the range in which the light-receiving device 110 detects light. If the distance from the light-shielding layer 158 to the light-receiving device 110 is long, the imaging range becomes narrow. This makes it possible to improve the imaging resolution.

[0179] The spacer 219b is located on the partition wall 216 and is adjacent to the light emitting device 19 in a top view. 0G and the light emitting device 190B. The upper surface of the spacer 219b is It is preferable that the thickness L3 of the light-shielding layer 219a is closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. When the sum L4 of the thickness of the wall 216 and the thickness of the spacer 219b is equal to or larger than the sum L4, the frame-shaped light-shielding layer 21 The adhesive layer 142 is not sufficiently filled inside the 9a, and the light receiving device 110 and further the display device Therefore, the thickness of the partition 216 and the spacer 21 The sum L4 of the thicknesses of the light-shielding layer 219a and the light-shielding layer 219b is preferably greater than the thickness L3 of the light-shielding layer 219a. This makes it easier to fill the adhesive layer 142. In the area where 19b and the light-shielding layer 158 overlap, the light-shielding layer 158 is connected to the protective layer 116 (or It may be in contact with a conducting electrode 115).

[0180] [Display device 10L] FIG. 8B shows a cross-sectional view of the display device 10L.

[0181] The display device 10L has light-emitting devices 190R, 190G, and 190B each having the same light-emitting layer. FIG. 8B is a cross-sectional view taken along the dashed line A3-A4 in FIG. do.

[0182] The light-emitting device 190G shown in FIG. 8B includes a pixel electrode 191G, an optical adjustment layer 197G, and a The light-transmitting layer 112, the light-emitting layer 113, the common layer 114, and the common electrode 115 are included. The light emitting device 190B shown includes a pixel electrode 191B, an optical adjustment layer 197B, a common layer 112, The light-emitting layer 113, the common layer 114, and the common electrode 115 are included. 3, and the common layer 114 are common to the light emitting devices 190R, 190G, and 190B. For example, the light emitting layer 113 includes a light emitting layer 193R that emits red light, a light emitting layer 193B that emits green light, and a light emitting layer 193C that emits red light. The light emitting layer 193G emits blue light, and the light emitting layer 193B emits blue light.

[0183] In FIG. 8B, the EL layer is represented by a common layer 112, a light-emitting layer 113, and a common layer 114. However, the light-emitting device is not limited to this. It may be a single structure having a EL layer (FIG. 18(A)), or a tandem structure having a plurality of EL layers. The structure may be as shown in FIG. 18(B).

[0184] The light-emitting layer 113 is provided in common to the light-emitting devices that emit light of each color. The light emitted by 90G is extracted as green light 21G via the colored layer CFG. The light emitted by the device 190B is extracted as blue light 21B via the colored layer CFB. can be.

[0185] Light emitting device 190G and light emitting device 190B have optical adjustment layers with different thicknesses. The pixel electrodes 191G and 191B are formed of reflective electrodes. A transparent electrode on a reflective electrode can be used as the optical adjustment layer. The devices preferably have optical adjustment layers 197 of different thicknesses. The light-emitting device 190G shown in FIG. 1 has an optical distance between the pixel electrode 191G and the common electrode 115. The optical adjustment layer 197G is used to adjust the optical distance so as to enhance the green light. Similarly, the light-emitting device 190B has an optical distance between the pixel electrode 191B and the common electrode 115. The optical adjustment layer 197B is used to adjust the optical distance so that the optical distance enhances blue light. is.

[0186] [Display device 10M] FIG. 9A shows a top view of a display device 10M. FIG. 9B shows a part of FIG. A cross-sectional view taken along the dashed line A5-A6 is shown.

[0187] The display device 10M shown in FIGS. 9(A) and 9(B) includes a green light-emitting device 190G and a blue light-emitting device 190C. The light-shielding layer 219a is provided between the light-emitting device 190B and the space 14. 7(A) and 7(B) in that the hollow sealing structure in which the cavity 3 is filled with an inert gas is applied. 8B) and the display device 10K shown in FIG.

[0188] As in the display device 10M, the light-shielding layer 219a is disposed between the light-emitting device 190R and the light-receiving device 11. 0 and between light emitting device 190G and light emitting device 190B. good.

[0189] [Display device 10N] FIG. 10(A) shows a top view of the display device 10N. FIG. 10(B) shows the display device 10N shown in FIG. FIG. 11(A) shows a cross-sectional view of the dashed line A7-A8 in FIG. A cross-sectional view between line A9-A10 is shown.

[0190] The cross-sectional structure of the display device 10N (FIG. 10(A)) taken along the dashed line A3-A4 is A configuration similar to that of the display device 10K (FIG. 8(A)) can be applied. Alternatively, the display device 10M (FIG. 9(B)) ) may be applied.

[0191] The display device 10N has a top surface shape and a cross-sectional shape of the light-shielding layer 219a similar to those of the display device 10K (FIG. 7( A) and FIG. 7(B)).

[0192] When viewed from above (or in a plan view), the light-shielding layer 219a is arranged to surround the four sides of the light-receiving device 110. The light-shielding layer 219a has a gap 220 ( The gap, interruption, or missing part is a red light-emitting device 190 The light source used for sensing is a light-emitting device of a specific color. In this case, a light-shielding layer 21 is provided on the side of a light-emitting device different from the light-emitting device used for the sensing. It is preferable that the gap 220 of 9a is located in the display device 10N. For example, in the display device 10N, A structure for performing sensing using a light emitting device 190G or a blue light emitting device 190B. This makes it possible to suppress the influence of noise during sensing. When sensing is performed using the green light-emitting device 190G, as shown in region 230, , one end of the light-shielding layer 219a is closer to the red light-emitting device 190G than the green light-emitting device 190G. It is preferable that the green light emitting device 190G protrudes toward the 190R side. This can prevent stray light from entering the light receiving device 110 through the gap 220.

[0193] The partition 216 has an opening between the light receiving device 110 and the light emitting device 190R. A light-shielding layer 219a is provided to cover the opening. It is preferable that the light-shielding layer 216 covers the opening of the light-shielding layer 216 and the side surface of the partition wall 216 exposed at the opening. Preferably, 19 a also covers at least a portion of the upper surface of partition wall 216 .

[0194] The light-shielding layer 219a may have an inverse tapered shape. The thickness of the organic film and the common electrode 115 to be shielded is thinner near the side of the light-shielding layer 219a. Furthermore, a gap 160 may occur near the side surface of the light blocking layer 219a.

[0195] Here, the light-shielding layer 219a surrounds all four sides of the light-receiving device 110 when viewed from above. When the light-shielding layer 219a is turned on, the common electrode 115 is cut off by the light-shielding layer 219a, and the inside and outside of the light-shielding layer 219a are separated. There is a risk that the common electrode 115 will be separated from the light shielding layer 219a. The shape of the light receiving device 110 is such that it surrounds the four sides of the light receiving device 110 and one end is spaced from the other end. By providing the common electrode 220, it is possible to prevent the common electrode 115 from being separated. This can suppress display defects in the device 10N.

[0196] FIG. 11A is a cross-sectional view including the gap 220 of the light-shielding layer 219a. The wall 216 surrounds the four sides of the light receiving device 110 in the same manner as the upper surface of the light blocking layer 219a. In addition, an opening is provided, one end of which is separated from the other end of the opening. In the gap 220, the common layer 112, the common layer 114, the common electrode 115, and the protective layer 116 are disposed on the partition wall 216. A protective layer 116 is in turn provided.

[0197] [Display device 10P] FIG. 11B shows a cross-sectional view of the display device 10P.

[0198] The display device 10P has a side wall 219c that contacts the side surface of the light-shielding layer 219a. Different from 10N.

[0199] In the display device 10P, the upper surface shape of the light-shielding layer 219a is frame-shaped as shown in FIG. Alternatively, as shown in FIG. 10(A), a gap 220 may be provided.

[0200] By providing a side wall 219c that contacts the side surface of the inverted tapered light-shielding layer 219a, the organic film and The coverage of the common electrode 115 and the like can be improved, and the display quality of the display device can be improved. By increasing the coverage of the common electrode 115, the common electrode 115 can be prevented from being broken or becoming thin. Since the film formation can be suppressed, uneven brightness of the display caused by the voltage drop of the common electrode 115 can be suppressed. It is possible.

[0201] The side wall 219c can be formed using the material that can be used for the partition wall 216.

[0202] [Display device 10Q] 12(A) and 12(B) are cross-sectional views of the display device 10Q. A top surface structure similar to that of the display device 10K (FIG. 7A) can be applied. 12(B) shows a cross-sectional view of the portion of FIG. 7(A) taken along the dashed line A1-A2. 2A) is a cross-sectional view taken along dashed line A3-A4 in FIG.

[0203] The display device 10Q differs from the display device 10K mainly in that it does not have the partition wall 216 but has the partition wall 217. varies.

[0204] The light-shielding layer 219a is located on the partition wall 217. The partition wall 217 is different from the partition wall 216 in that it has a light-emitting Since the light emitted by the optical device can be absorbed, it is not necessary to provide an opening in the partition wall 217. Stray light 23d incident on the partition 217 from the light emitting device is absorbed by the partition 217. Stray light 23d incident on the light-shielding layer 219a from the optical device is absorbed by the light-shielding layer 219a. .

[0205] Spacer 219b is located between light-emitting device 190G and light-emitting device 190B. The upper surface of the spacer 219b is preferably closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. If the thickness of the spacer 219b is thinner than the thickness of the light-shielding layer 219a, the frame-shaped light-shielding layer 21 The adhesive layer 142 is not sufficiently filled inside the 9a, and the light receiving device 110 and further the display device Therefore, the spacer 219b is not provided on the light-shielding layer 21. It is preferable that the thickness is larger than that of the adhesive layer 142. This makes it easier to fill the adhesive layer 142. As shown in FIG. 12B, in the portion where the spacer 219b and the light-shielding layer 158 overlap, The light-shielding layer 158 may be in contact with the protective layer 116 (or the common electrode 115).

[0206] A more detailed configuration of the display device according to one embodiment of the present invention will be described below with reference to FIGS. 13 to 17. I will explain it below.

[0207] [Display device 100A] FIG. 13 shows a perspective view of the display device 100A, and FIG. 14 shows a cross-sectional view of the display device 100A. vinegar.

[0208] The display device 100A has a configuration in which a substrate 152 and a substrate 151 are bonded together. 1, substrate 152 is shown by dashed lines.

[0209] The display device 100A includes a display unit 162, a circuit 164, wiring 165, and the like. 1 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on a display device 100A. Therefore, the configuration shown in FIG. 13 is a display device having a display device 100A, an IC, and an FPC. It can also be called a display module.

[0210] The circuit 164 can be, for example, a scanning line driver circuit.

[0211] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input from the outside via the FPC 172 or from the IC 173 to the wiring 165. is entered.

[0212] In Figure 13, the COG (Chip On Glass) method or the COF (Chip On 1 shows an example in which an IC 173 is provided on a substrate 151 by a method such as a film method. 73 can be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100A and the display module may be configured without an IC. The IC may be mounted on the FPC using the COF method or the like.

[0213] FIG. 14 shows a part of the area including the FPC 172, a part of the circuit 164, and a display device 100A. 10A and 10B are cross-sectional views of a portion of the display unit 162 and a portion of a region including an end portion of the display unit 162. show.

[0214] The display device 100A shown in FIG. 14 includes a transistor 201 between a substrate 151 and a substrate 152. , transistor 205, transistor 206, light emitting device 190, light receiving device 110 etc.

[0215] The resin layer 159 and the insulating layer 214 are bonded to each other via an adhesive layer 142. A solid sealing structure or a hollow sealing structure can be used to seal the light receiving device 110. In FIG. 14, a space 143 surrounded by a substrate 152, an adhesive layer 142, and a substrate 151 is It is filled with an inert gas (such as nitrogen or argon) and has a hollow sealed structure. The adhesive layer 142 may be provided over the light emitting device 190 and the light receiving device 110. In addition, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the substrate 151 is filled with the adhesive. It may be filled with a resin different from that of layer 142.

[0216] The light-emitting device 190 includes, from the insulating layer 214 side, a pixel electrode 191, a common layer 112, and a light-emitting layer 19. 3, a common layer 114, and a common electrode 115 are laminated in this order. 91 is a conductive layer 2 of the transistor 206 through an opening in the insulating layer 214. It is connected to 22b.

[0217] The edge of the pixel electrode 191 is covered by a partition wall 217. The common electrode 115 comprises a material that is reflective to visible light.

[0218] The light receiving device 110 includes, from the insulating layer 214 side, a pixel electrode 181, a common layer 112, an active layer 18, and a 3, a common layer 114, and a common electrode 115 are laminated in this order. 81 is a conductive layer 2 of the transistor 205 through an opening provided in the insulating layer 214. The end of the pixel electrode 181 is covered with a partition wall 217. The pixel electrode 181 contains a material that reflects visible light, and the common electrode 115 transmits visible light. Contains materials that

[0219] The light emitted by the light emitting device 190 is emitted toward the substrate 152. Light is incident on the substrate 152 via the space 143. It is preferable to use a material that is highly permeable to the light.

[0220] The pixel electrode 181 and the pixel electrode 191 can be manufactured using the same material and in the same process. The common layer 112, the common layer 114, and the common electrode 115 are connected to the light-receiving device 110 and the light-emitting device. The light receiving device 110 and the light emitting device 190 are both active. The layers 183 and 193 may have the same structure except for the different structures. As a result, the light receiving device 110 can be incorporated in the display device 100A without significantly increasing the number of manufacturing steps. It can be stored.

[0221] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the substrate 152 facing the substrate 151 . The resin layer 159 is provided at a position overlapping the light-emitting device 190 and overlapping the light-receiving device 110. The light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151, on the resin layer 1 The light-shielding layer 158 is provided to cover the side surface of the light-shielding layer 59 and the surface of the resin layer 159 on the substrate 151 side. , has openings at positions overlapping the light receiving device 110 and the light emitting device 190. By providing the light-shielding layer 158, the range in which the light-receiving device 110 detects light can be controlled. In addition, by providing the light-shielding layer 158, the light-emitting device 190 can be illuminated without passing through an object. This can prevent light from being directly incident on the light receiving device 110. Therefore, noise is reduced. By providing the resin layer 159, the light-shielding layer 15 8 to the light emitting device 190, and the distance from the light shielding layer 158 to the light receiving device 110. This reduces the sensor noise while improving the visibility of the display. The field angle dependency can be suppressed, thereby improving both the display quality and the image quality. It is possible.

[0222] The configuration of the partition wall 217 and the light-shielding layer 219a in the display device 100A is the same as that of the display device 10Q (FIG. 12(A)).

[0223] The partition wall 217 covers the end of the pixel electrode 181 and the end of the pixel electrode 191. A light-shielding layer 219a is provided on the light-receiving device 110. The partition 217 and the light-shielding layer 219a are located between the light-emitting device 190 and the light-receiving device 190. It is preferable that the light receiving device 110 absorbs the wavelength of light that it detects. Therefore, stray light entering the optical fiber can be suppressed.

[0224] The transistor 201, the transistor 205, and the transistor 206 are all connected to the substrate 1. These transistors are fabricated using the same materials and processes. It can be manufactured.

[0225] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 is provided in this order, with a portion of it serving as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. The number of gate insulating layers and the number of transistors are determined by the number of gate insulating layers. There is no limit to the number of insulating layers covering the stamper, and each may be a single layer or two or more layers.

[0226] At least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. It is preferable to use a material such as a fluorine-containing compound. This allows the insulating layer to function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This can effectively suppress the noise and improve the reliability of the display device.

[0227] The insulating layers 211, 213, and 215 are each made of an inorganic insulating film. As the inorganic insulating film, for example, a silicon nitride film or a silicon oxynitride film is preferable. , silicon oxide film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film, etc. Also, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, etc. can be used. aluminum oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film Alternatively, two or more of the above insulating films may be stacked. It may be used.

[0228] Here, organic insulating films often have lower barrier properties than inorganic insulating films. The insulating film preferably has an opening near the end of the display device 100A. Therefore, it is possible to prevent impurities from entering from the end of the display device 100A through the organic insulating film. Alternatively, the organic insulating film may be arranged so that the end of the organic insulating film is located inside the end of the display device 100A. An insulating film may be formed so that the organic insulating film is not exposed at the edge of the display device 100A.

[0229] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, polyamide resin, etc. resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resins, and precursors of these resins.

[0230] In the region 228 shown in FIG. 14, an opening is formed in the insulating layer 214. Even when an organic insulating film is used for the layer 214, the display unit 1 can be exposed from the outside through the insulating layer 214. Therefore, the reliability of the display device 100A can be improved. It can be done.

[0231] Transistor 201, transistor 205, and transistor 206 function as gates. a conductive layer 221 serving as a gate insulating layer; an insulating layer 211 serving as a source and drain; The conductive layer 222a and the conductive layer 222b functioning as a gate insulating layer, the semiconductor layer 231, The insulating layer 213 functions as a gate, and the conductive layer 223 functions as a gate. The same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is It is located between the conductive layer 223 and the semiconductor layer 231 .

[0232] The structure of a transistor included in the display device of this embodiment is not particularly limited. Uses transistors of the same type, staggered type, inverted staggered type, etc. In addition, the present invention can be applied to any of the top-gate and bottom-gate transistor structures. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed. Good too.

[0233] The transistors 201, 205, and 206 have channels. The structure in which the semiconductor layer formed by the MOSFET is sandwiched between two gates is applied. and driving the transistors by supplying the same signal to them. Of the two gates, one is given a potential to control the threshold voltage, and the other is given a potential to drive The threshold voltage of the transistor may be controlled by applying a potential.

[0234] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or semiconductor with partially crystalline regions) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0235] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may include silicon. is amorphous silicon, crystalline silicon (low-temperature polysilicon, single crystal silicon, etc.) ) etc.

[0236] The semiconductor layer may be, for example, a combination of indium and M (where M is gallium, aluminum, silicon, or phosphide). Uranium, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gel Manium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum one or more selected from the group consisting of tantalum, tungsten, and magnesium; zinc; In particular, M is aluminum, gallium, yttrium, and sulphur. It is preferable that the polysaccharide is one or more selected from the above.

[0237] In particular, the semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). It is preferable to use IGZO (intermetallic oxide).

[0238] When the semiconductor layer is an In-M-Zn oxide, the In atoms in the In-M-Zn oxide The atomic ratio of In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of elements is In:M:Zn=1:1:1 or a composition close to that. In:M: Zn=1:1:1.2 or a similar composition, In:M:Zn=2:1:3 or a similar composition Near composition, In:M:Zn=3:1:2 or nearby composition, In:M:Zn=4:2 :3 or a composition close thereto, In:M:Zn=4:2:4.1 or a composition close thereto, I n:M:Zn=5:1:3 or a composition close thereto, In:M:Zn=5:1:6 or a composition close thereto Compositions in the vicinity of In:M:Zn=5:1:7 or compositions in the vicinity of In:M:Zn=5 :1:8 or a composition close thereto, In:M:Zn=6:1:6 or a composition close thereto, I The composition of n:M:Zn=5:2:5 or its vicinity is given. includes a range of ±30% of the desired atomic ratio.

[0239] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or a composition close to that When the atomic ratio of In is 4, the atomic ratio of Ga is 1 to 3, and the atomic ratio of Zn is The ratio is 2 to 4. The atomic ratio is In:Ga:Zn=5:1:6. When describing the composition as being close to or equal to the atomic ratio of Ga when the atomic ratio of In is 5, This includes cases where the atomic ratio of Zn is 5 or more and 7 or less. In addition, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or a composition close to that, When the atomic ratio of n is 1, the atomic ratio of Ga is more than 0.1 and is 2 or less, and Zn This includes cases where the atomic ratio is greater than 0.1 and less than 2.

[0240] The transistors in the circuit 164 and the transistors in the display portion 162 have the same structure. The circuit 164 may have a plurality of transistors, or may have a different structure. The structures may all be the same, or there may be two or more types. The structures of the multiple transistors may all be the same, or there may be two or more types.

[0241] A connection portion 204 is provided in an area of ​​the substrate 151 where the substrate 152 does not overlap. In the portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 204 is formed by processing the same conductive film as the pixel electrode 181. The resulting conductive layer 166 is exposed. This allows the connection portion 204 and the FPC 172 to be connected. Electrical connection can be made via interconnect layer 242.

[0242] Various optical members can be arranged on the outside of the substrate 152. Examples of the optical members include a polarizing plate. Examples of the optical components include a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. In addition, the outside of the substrate 152 is provided with an antistatic film to prevent dust from adhering, It is equipped with a water-repellent film that protects the product from scratches, a hard coat film that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0243] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, or resin. The substrate 151 and the substrate 152 may be made of a flexible material. This can increase the flexibility of the display device.

[0244] The adhesive layer may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as elastomeric adhesives, anaerobic adhesives, etc. can be used. epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide Resin, PVC (Polyvinyl chloride) resin, PVB (Polyvinyl butyral) resin, EV A (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc., which have high moisture permeability, A material with low adhesion is preferable. Two-part mixed resin may also be used. An adhesive sheet or the like may also be used. It's fine.

[0245] The connection layer 242 is an anisotropic conductive film (ACF). ductive film), anisotropic conductive paste (ACP) Conductive Paste) can be used.

[0246] The light emitting device 190 may be a top-emitting type, a bottom-emitting type, a dual-emitting type, or a The electrode on the light extraction side uses a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted.

[0247] The light emitting device 190 includes at least a light emitting layer 193. As layers other than 193, a material with high hole injection properties, a material with high hole transport properties, a hole blocking material Materials with high electron transport properties, materials with high electron injection properties, or bipolar materials (electron transport For example, a common layer may be provided. 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, The common layer 114 preferably includes one or both of an electron transport layer and an electron injection layer.

[0248] The hole injection layer is a layer that injects holes from the anode to the hole transport layer, and is made of a material with high hole injection properties. The material having a high hole injection property is an aromatic amine compound or a hole transporting material. and an acceptor material (electron-accepting material).

[0249] In a light-emitting device, the hole transport layer transports holes injected from the anode through the hole injection layer. In a light-receiving device, the hole transport layer is a layer that transports incident light to the active layer. The hole transport layer is a layer that transports holes generated based on the incident light to the anode. The layer contains 1×10 -6 cm 2 Hole mobility above / Vs In addition, as long as a material has a higher hole transporting property than an electron transporting property, the above-mentioned Other materials can also be used. As hole transport materials, π-electron-rich heteroaromatic compounds can be used. (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines A material having a high hole transporting property such as (a compound having an aromatic amine skeleton) is preferable.

[0250] In a light-emitting device, the electron transport layer transports electrons injected from the cathode by the electron injection layer. In a light-receiving device, the electron transport layer is a layer that transports electrons incident on the active layer to the light-emitting layer. The electron transport layer is a layer that transports electrons generated based on the incident light to the cathode. The layer contains 1×10 -6 cm 2 Electron mobility above / Vs In addition, as long as a material has a higher electron transporting property than a hole transporting property, the above-mentioned As the electron transporting material, metal complexes having a quinoline skeleton can be used. metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, thiazo In addition to metal complexes with aryl skeletons, oxadiazole derivatives, triazole derivatives, imide derivatives, etc. Dazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, chiral derivatives, Quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoline derivatives, Benzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, In addition, nitrogen-containing heteroaromatic compounds and other π-electron-deficient heteroaromatic compounds with high electron transport properties are also available. Materials can be used.

[0251] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is made of a material with high electron injection properties. The material with high electron injection properties is an alkali metal, an alkaline earth metal, or As a material with high electron injection properties, an electron transport material can be used. A composite material containing a material having a property of being an electron donor and a material having a property of being a donor (electron donor) can also be used.

[0252] The common layer 112, the light-emitting layer 193, and the common layer 114 are made of a low molecular weight compound and a high molecular weight compound. The common layer 112 and the light-emitting layer 1 may contain an inorganic compound. The layers constituting the common layer 114 and the layer 93 are formed by deposition (including vacuum deposition), transfer, The conductive layer can be formed by a method such as a printing method, an ink jet method, or a coating method.

[0253] The light-emitting layer 193 is a layer containing a light-emitting material. The light-emitting layer 193 contains one or more types of light-emitting material. The luminescent materials can be blue, purple, blue-purple, green, yellow-green, yellow, A substance that emits light of a color such as red, orange, or red is appropriately used. It is also possible to use a substance that emits

[0254] The active layer 183 of the light receiving device 110 includes a semiconductor, such as silicon. Examples of the semiconductor include inorganic semiconductors and organic semiconductors containing organic compounds. Here, we will show an example in which an organic semiconductor is used as the semiconductor in the active layer. The light-emitting layer 193 of the light-emitting device 190 and the active layer 183 of the light-receiving device 110 are formed in the same This is preferable because the film can be formed by a method (e.g., a vacuum deposition method) and the manufacturing equipment can be shared. stomach.

[0255] The active layer 183 is made of an n-type semiconductor material such as fullerene (e.g., C 60 , C 70 etc. ) or a derivative thereof. The p-type semiconductor material possessed by the compound is copper(II) phthalocyanine (Copper(II) phthalocyanine;CuPc) and tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene;DBP), zinc Electron donating properties of phthalocyanine (ZnPc) As a p-type semiconductor material, tin phthalocyanine ( SnPc) may also be used.

[0256] For example, the active layer 183 is preferably formed by co-evaporation of an n-type semiconductor and a p-type semiconductor. .

[0257] In addition to the gate, source, and drain of the transistor, various wiring and power supply circuits that make up the display device are also included. Materials that can be used for the conductive layers, such as the electrodes, include aluminum, titanium, chromium, and nickel. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten These materials include metals such as niobium, as well as alloys that contain these metals as their main components. The film containing the compound can be used as a single layer or as a laminate structure.

[0258] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium. Conductive oxides such as zinc oxide, zinc oxide, zinc oxide containing gallium, etc., or graphene Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, Metallic materials such as nickel, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium Alternatively, an alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (e.g. For example, titanium nitride) may be used. In the case of using a material such as a glass substrate, it is preferable to make the material thin enough to have light transmission properties. A laminated film of the above can be used as the conductive layer. For example, a silver-magnesium alloy and indium It is preferable to use a laminated film of tin oxide or the like, since the electrical conductivity can be increased. These include conductive layers such as various wiring and electrodes that constitute the display device, and conductive layers that the display device has. The conductive layer may also be used as a pixel electrode or a common electrode.

[0259] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, oxide Examples of the insulating material include inorganic insulating materials such as aluminum.

[0260] [Display device 100B] FIG. 15A shows a cross-sectional view of the display device 100B.

[0261] The display device 100B has a protective layer 116 and a solid sealing structure. The main difference is with the display device 100A.

[0262] A protective layer 116 is provided to cover the light receiving device 110 and the light emitting device 190. The intrusion of impurities such as water into the light receiving device 110 and the light emitting device 190 is suppressed. This can improve the reliability of the device 110 and the light emitting device 190.

[0263] In a region 228 near the end of the display device 100B, an insulating layer 214 is formed through an opening in the insulating layer 214. It is preferable that the insulating layer 215 and the protective layer 116 are in contact with each other. It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 116 are in contact with each other. This prevents impurities from entering the display unit 162 from the outside through the organic insulating film. This makes it possible to improve the reliability of the display device 100B.

[0264] FIG. 15B shows an example in which the protective layer 116 has a three-layer structure. The layer 116 is made up of an inorganic insulating layer 116a on the common electrode 115 and an organic insulating layer 116b on the inorganic insulating layer 116a. It has an edge layer 116b and an inorganic insulating layer 116c on the organic insulating layer 116b.

[0265] The ends of the inorganic insulating layer 116a and the inorganic insulating layer 116c are closer to each other than the ends of the organic insulating layer 116b. The inorganic insulating layer 116a extends outwardly from the insulating layer 214( The insulating layer 215 (inorganic insulating layer) is in contact with the insulating layer 215 through the opening of the organic insulating layer. The layer 215 and the protective layer 116 may surround the light receiving device 110 and the light emitting device 190. Therefore, the reliability of the light receiving device 110 and the light emitting device 190 can be improved. .

[0266] In this way, the protective layer 116 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends outward beyond the end of the organic insulating film.

[0267] In the display device 100B, the protective layer 116 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 is bonded to the light receiving device 110 and the light emitting device 190, respectively. The display device 100B has a solid sealing structure.

[0268] [Display device 100C] 16 and 17A show cross-sectional views of the display device 100C. The figure is the same as that of the display device 100A (FIG. 13). FIG. 16 shows the FP of the display device 100C. A part of the area including C172, a part of the circuit 164, and a part of the display unit 162 are cut off. 17A shows an example of a cross section of the display unit 162 of the display device 100C. FIG. 16 shows an example of a cross section of a part of the display unit 162. When the area including the optical device 110 and the light emitting device 190R that emits red light is cut, FIG. 17A shows an example of a cross section of the display unit 162, particularly a light emitting portion that emits green light. When the area including the optical device 190G and the light-emitting device 190B that emits blue light is cut 4 shows an example of a cross section of the

[0269] The display device 100C shown in FIG. 16 and FIG. 17A has a substrate 153 and a substrate 154. Transistor 203, transistor 207, transistor 208, transistor 209, Transistor 210, light emitting device 190R, light emitting device 190G, light emitting device 190 B, and a light receiving device 110.

[0270] The resin layer 159 and the common electrode 115 are bonded to each other via an adhesive layer 142, and the display device 10 The 0C uses a solid sealing structure.

[0271] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. It is attached to the insulating layer 157 by an adhesive layer 156 .

[0272] The method for manufacturing the display device 100C is as follows: first, the insulating layer 212, each transistor, and each light receiving device are The first fabrication substrate on which the seat 110, the light emitting devices, etc. are provided, the insulating layer 157, the resin layer 1 59, and a second preparation substrate on which a light-shielding layer 158 and the like are provided, are attached by an adhesive layer 142. Then, the first fabrication substrate is peeled off, and the substrate 153 is attached to the exposed surface, and the second fabrication substrate is The substrate is peeled off and a substrate 154 is attached to the exposed surface, so that the first fabrication substrate and the second fabrication substrate are The components formed on the plate are transferred to the substrate 153 and the substrate 154. It is preferable that each of the plates 154 is flexible. The flexibility of the film can be increased.

[0273] The insulating layer 212 and the insulating layer 157 are respectively formed of the insulating layer 211, the insulating layer 213, and the insulating layer 157. An inorganic insulating film that can be used for the layer 215 can be used.

[0274] The light-emitting device 190R includes, from the insulating layer 214b side, a pixel electrode 191R, a common layer 112, and a light-emitting The layer 193R, the common layer 114, and the common electrode 115 are laminated in this order. The base electrode 191R is connected to the conductive layer 169R through an opening provided in the insulating layer 214b. The conductive layer 169R is connected to the transistor through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to the conductive layer 222b of the insulating layer 215. The pixel electrode 191R is connected to the low resistance region 231n through the opening. , electrically connected to the transistor 208. The transistor 208 is a light emitting device. It has the function of controlling the drive of 190R.

[0275] Similarly, the light emitting device 190G includes a pixel electrode 191G and a common layer 11G from the insulating layer 214b side. 2. A laminated structure in which a light-emitting layer 193G, a common layer 114, and a common electrode 115 are laminated in this order. The pixel electrode 191G includes a conductive layer 169G and a conductive layer 222b of the transistor 209. The pixel is electrically connected to the low resistance region 231n of the transistor 209 through the The electrode 191G is electrically connected to the transistor 209. , and has a function of controlling the driving of the light emitting device 190G.

[0276] The light emitting device 190B includes a pixel electrode 191B and a common layer 11 from the insulating layer 214b side. 2. A laminated structure in which a light-emitting layer 193B, a common layer 114, and a common electrode 115 are laminated in this order. The pixel electrode 191B includes a conductive layer 169B and a conductive layer 222b of the transistor 210. The pixel is electrically connected to the low resistance region 231n of the transistor 210 through the The electrode 191B is electrically connected to the transistor 210. , and has a function of controlling the driving of light emitting device 190B.

[0277] The light receiving device 110 includes, from the insulating layer 214b side, a pixel electrode 181, a common layer 112, an active layer 1 The pixel electrode 83 has a laminated structure in which the common layer 114 and the common electrode 115 are laminated in this order. 181 is connected to the transistor 207 via the conductive layer 168 and the conductive layer 222b of the transistor 207. That is, the pixel electrode 181 is electrically connected to the low resistance region 231n of the transistor 207. The input terminal 204 is electrically connected to the transistor 207 .

[0278] The ends of the pixel electrodes 181, 191R, 191G, and 191B are covered with partition walls 216. The pixel electrodes 181, 191R, 191G, and 191B include a material that reflects visible light. The common electrode 115 includes a material that transmits visible light.

[0279] The light emitted from the light emitting devices 190R, 190G, and 190B is emitted toward the substrate 154. Furthermore, light is incident on the light receiving device 110 through the substrate 154 and the adhesive layer 142 . The substrate 154 is preferably made of a material that is highly transparent to visible light.

[0280] The pixel electrode 181 and the pixel electrode 191 can be manufactured using the same material and in the same process. The common layer 112, the common layer 114, and the common electrode 115 are connected to the light receiving device 110 and the light emitting device 112. The light receiving device 110 and each color The light-emitting device has the same configuration as that of the light-emitting device of the above, except for the configuration of the active layer 183 and the light-emitting layer. This allows the display device 100C to receive light without significantly increasing the number of manufacturing steps. The device 110 may be included.

[0281] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the insulating layer 157 facing the substrate 153. The resin layer 159 is provided at a position overlapping the light emitting devices 190R, 190G, and 190B. The light-shielding layer 158 is not provided at a position where it overlaps with the light-receiving device 110. The surface of the resin layer 159 facing the substrate 153, the side surface of the resin layer 159, and the surface of the resin layer 159 facing the substrate 153 are covered with the The light-shielding layer 158 is provided at a position overlapping the light-receiving device 110 and at a position overlapping the light-emitting device 190. The light shielding layer 158 has openings at positions overlapping with the light beams R, 190G, and 190B. This allows the range in which the light receiving device 110 detects light to be controlled. 158, the light emitting devices 190R, 190G, and 190B can be illuminated without passing through the object. This can prevent light from being directly incident on the light receiving device 110. Therefore, noise is reduced. By providing the resin layer 159, the light-shielding layer 15 The distance from the light shielding layer 158 to the light receiving device 110 is This reduces the sensor noise while suppressing the viewing angle dependency of the display. Therefore, it is possible to improve both the display quality and the image capturing quality.

[0282] The partition walls 216, the light-shielding layers 219a, and the spacers 219b in the display device 100C are configured as follows: , which is similar to the display device 10K (FIGS. 7(B) and 8(A)).

[0283] In FIG. 16, the partition 216 has an opening between the light receiving device 110 and the light emitting device 190R. The light-shielding layer 219a is provided so as to fill the opening. The light-shielding layer 219a is The light-shielding layer 219a is located between the light-receiving device 110 and the light-emitting device 190R. The light emitted by the optical device 190R is absorbed. Stray light can be suppressed.

[0284] Spacer 219b is located between light-emitting device 190G and light-emitting device 190B. The upper surface of the spacer 219b is preferably closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. For example, the sum of the height (thickness) of the partition wall 216 and the height (thickness) of the spacer 219b is It is preferable that the height (thickness) of the adhesive layer 142 is larger than that of the optical layer 219a. As shown in FIG. 17A, the spacer 219b and the light-shielding layer 15 are In the overlapping portion between the light-shielding layer 158 and the common electrode 115 (or the protective layer), This is also fine.

[0285] A connection portion 204 is provided in an area of ​​the substrate 153 where the substrate 154 does not overlap. In the portion 204, the wiring 165 is connected to the F via the conductive layer 167, the conductive layer 166, and the connection layer 242. The conductive layer 167 is electrically connected to the PC 172. The conductive layer 167 is made of the same conductive film as the conductive layer 168. The upper surface of the connection portion 204 is formed with the same conductive film as the pixel electrode 181. The conductive layer 166 obtained by the above process is exposed. can be electrically connected via a connection layer 242.

[0286] Transistor 207, transistor 208, transistor 209, and transistor 21 0 is a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, A semiconductor layer having a channel forming region 231i and a pair of low resistance regions 231n. A conductive layer 222a connected to one of the pair of low resistance regions 231n, and a conductive layer 222b connected to the other of the pair of low resistance regions 231n a conductive layer 222b connected to the gate electrode; an insulating layer 225 functioning as a gate insulating layer; The insulating layer 211 includes a conductive layer 223 that is formed on the conductive layer 223 and an insulating layer 215 that covers the conductive layer 223. The insulating layer 225 is located between the conductive layer 221 and the channel formation region 231i. 23 and the channel formation region 231i.

[0287] The conductive layer 222a and the conductive layer 222b are each formed through an opening in the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b is connected to the low resistance region 231n. One acts as a source and the other acts as a drain.

[0288] In FIG. 16, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, and For example, the insulating layer 225 is formed by using the conductive layer 223 as a mask. By processing, the structure shown in FIG. 16 can be fabricated. In FIG. 16, the insulating layer 225 and the conductive layer An insulating layer 215 is provided to cover the conductive layer 223, and the conductive layer 222a is exposed through an opening in the insulating layer 215. and the conductive layer 222b are connected to the low resistance region 231n. An insulating layer covering the transistor may be provided over the conductive layer 222a and the conductive layer 222b.

[0289] On the other hand, in the transistor 202 shown in FIG. 17B, the insulating layer 225 is provided on the top surface of the semiconductor layer and The conductive layer 222a and the conductive layer 222b are formed on the insulating layer 225 and the insulating layer 226, respectively. The insulating layer 215 is connected to the low resistance region 231 n through an opening formed therein.

[0290] As described above, the display device of the present embodiment has a light receiving device and a light emitting device in the display section. The display unit has both a function of displaying an image and a function of detecting light. Compared to a case where a sensor is provided outside the display unit or outside the display device, the electronic device can be made smaller and It is possible to reduce the weight. In addition, the sensor provided outside the display unit or outside the display device can be By combining these devices, more multi-functional electronic devices can be realized.

[0291] The light receiving device is configured such that at least one of the layers provided between a pair of electrodes is a light emitting device ( For example, the light receiving device can have a structure common to the active layer and the EL device. All the layers may be formed in common with the light-emitting device (EL device). By simply adding a process for forming an active layer to the process for fabricating a light-emitting device, The light receiving device and the light emitting device can be formed on the same substrate. In this case, the pixel electrode and the common electrode can be formed using the same material and in the same process. In addition, a circuit electrically connected to the light receiving device and a circuit electrically connected to the light emitting device can be provided. The display device manufacturing process can be simplified by manufacturing the display device and the circuit to be mounted thereon using the same material and process. In this way, the light receiving device can be built in without complicated processes, and the convenience can be improved. It is possible to manufacture a display device with high performance.

[0292] In the display device of the present embodiment, holes are easily injected into the light-emitting layer, and electrons are not easily injected into the light-emitting layer. By applying such a configuration, the initial state of the light-emitting device can be This suppresses degradation and significantly extends the operating life of the light-emitting device. This can improve the reliability of the display device.

[0293] In the display device of the present embodiment, the distance from the light-shielding layer to the light-receiving device is long, and A structure is provided on the surface on which the light-shielding layer is formed so that the distance from the light-shielding layer to the light-emitting device is shortened. This reduces sensor noise, increases image resolution, and reduces viewing angle dependency of the display. Therefore, both the display quality and the image quality of the display device can be improved. can be increased.

[0294] This embodiment mode can be appropriately combined with other embodiment modes. In the case where a plurality of configuration examples are shown in one embodiment, the configuration examples may be appropriately combined. It is possible to do this.

[0295] (Embodiment 2) In this embodiment, a light-emitting device that can be used for a display device of one embodiment of the present invention will be described. This will be explained with reference to FIG.

[0296] The light-emitting device shown in FIG. 18(A) has an anode 101, an EL layer 103, and a cathode 102. The light-emitting device shown in FIG. 18(A) has a single EL layer sandwiched between a pair of electrodes. The EL layer 103 is made up of a hole injection layer 121, a hole injection layer 122, and a cathode 123. It has a hole transport layer 122 , a light emitting layer 123 , an electron transport layer 124 , and an electron injection layer 125 . Although not shown in Figs. 18(A) to 18(D), the light-emitting device has an optical adjustment layer. It's fine.

[0297] Anode 101, cathode 102, hole injection layer 121, hole transport layer 122, light emitting layer 123, electron transport layer The transport layer 124 and the electron injection layer 125 may each have a single layer structure or a multilayer structure. This is also fine.

[0298] The light-emitting device shown in FIG. 18(B) includes an anode 101, an EL layer 103a, a charge generating layer 104, The light-emitting device shown in FIG. A tandem structure is applied, having a charge generating layer 104 between the EL layers.

[0299] In each EL layer of the tandem structure light-emitting device, the following structures are used: A structure similar to that of the EL layer in a single-structure light-emitting device shown in FIG. 8(D) can be applied. do.

[0300] When a voltage is applied between the anode 101 and the cathode 102, the charge generating layer 104 and a function of injecting electrons into one of the EL layers 103b and holes into the other. Therefore, in FIG. 18B, the anode 101 has a higher potential than the cathode 102. When a voltage is applied so that the charge generation layer 104 is injecting electrons into the EL layer 103a, the E Holes are injected into the L layer 103b.

[0301] In a tandem-structure light-emitting device, the emission color of each EL layer is made different, The entire optical device can emit light of the desired color. For example, In a light-emitting device, red and green light is emitted from one EL layer and blue light is emitted from the other EL layer. By obtaining colored light emission, a light-emitting device that emits white light as a whole can be obtained. For example, in a light-emitting device having three EL layers, blue light can be emitted from the first EL layer. The first EL layer emits green light, the second EL layer emits green light, and the third EL layer emits red light. As a whole device, a white light-emitting device can be obtained. In a light-emitting device having an EL layer, blue emission from the first EL layer and a second EL layer on the first EL layer Yellow, yellow-green, or green and red light emission from the second EL layer; By obtaining blue light from the L layer, the device as a whole emits white light. For example, in a light-emitting device having four EL layers, the first EL blue light emission from the second EL layer and the third EL layer on the first EL layer, respectively Yellow, yellow-green, or green emission from one side and red emission from the other side, on the second EL layer and on the third EL By obtaining blue light emission from the fourth EL layer on the top layer, the light-emitting device as a whole emits white light. A light-emitting device having such a structure can be obtained.

[0302] The hole transport layer 122 of the light-emitting device shown in FIG. 18(C) and FIG. 18(D) is a hole injection layer. The hole transport layer 122a on the side of the light-emitting layer 121 and the hole transport layer 122b on the side of the light-emitting layer 123 are It has a layered structure.

[0303] The electron transport layer 124 of the light-emitting device shown in FIG. 18(D) is an electron transport layer on the light-emitting layer 123 side. The electron transport layer 124b is disposed on the electron injection layer 125 side and has a two-layer structure.

[0304] The light-emitting device of the present embodiment has a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. At least one of the input layers can be a common layer with the light receiving device. The manufacturing process can be reduced compared to when the light-emitting devices are formed separately, and the light-emitting devices can be formed on the same surface. A light receiving device can be formed.

[0305] For example, the light-emitting device of the present embodiment may include a hole injection layer, a hole transport layer, an electron transport layer, and an electrode. All of the electron injection layers can be common to the light receiving device. By simply creating separate layers for the light-emitting device and the light-receiving device, and a light receiving device.

[0306] Materials that can be used in light-emitting devices are described below.

[0307] <Electrode> The materials for forming the pair of electrodes of the light-emitting device include metals, alloys, electrically conductive compounds, and In-Sn oxide (ITO) and mixtures thereof can be used as appropriate. O), In-Si-Sn oxide (also called ITSO), In-Zn oxide, In -W-Zn oxide. Other examples include aluminum (Al), titanium (Ti), chromium (Cr) Cobalt (Cr), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni), Copper (Cu), Gallium (Ga), Zinc (Zn), Indium (In), Tin (Sn), Molybdenum (Mo) Butan (Mo), Tantalum (Ta), Tungsten (W), Palladium (Pd), Gold (A u), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd) and other metals, In addition, alloys containing these in appropriate combinations may also be used. Elements belonging to Group 1 or 2 of the Periodic Table (e.g., lithium (Li), cesium ( Cs), calcium (Ca), strontium (Sr), europium (Eu), Rare earth metals such as terbium (Yb) and alloys containing these in appropriate combinations, graphene etc. can be used.

[0308] When a light-emitting device having a microcavity structure is to be fabricated, a reflective electrode and a semi-transparent Therefore, a single or multiple desired conductive materials are used, and a single layer or The electrodes can be formed by laminating layers. The electrodes can be fabricated by sputtering or vacuum deposition. There can be.

[0309] <Hole injection layer> The hole injection layer 121 preferably comprises a first compound and a second compound.

[0310] The first compound is an electron-accepting material (acceptor material) and is It has electron accepting properties.

[0311] The second compound is a hole transporting material. A hole transporting material has a higher ability to transport holes than electrons. expensive.

[0312] The highest occupied molecular orbital (HOMO) level of the second compound is preferably relatively low (deep). Specifically, the HOMO level of the second compound is in the range of -5.7 eV to -5.4 eV. It is preferable that the HOMO level of the second compound is relatively low. This is preferable because it makes it easier to inject holes into 2.

[0313] The first compound contains an electron-withdrawing group (especially a halogen group such as a fluoro group or a cyano group). An organic compound having the above structure can be used.

[0314] The first compound may be, for example, a quinodimethane derivative, a chloranil derivative, a hexaazato Organic acceptors such as phenylene derivatives can be used. ,8,8-Tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4- TCNQ), Chloranil, 2,3,6,7,10,11-Hexacyano-1,4,5,8 ,9,12-Hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7, 8-Hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2 -(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H -pyren-2-ylidene)malononitrile, etc. Compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple heteroatoms, such as It is stable and preferable. In addition, it is preferable that the compound has an electron-withdrawing group (especially a halogen group such as a fluoro group or a cyano group). Radialene derivatives having the formula [3] are preferred because they have a very high electron-accepting ability. Examples of the radialene derivative having a group include α,α',α''-1,2,3- Cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzene diacetonitrile], α,α',α''-1,2,3-cyclopropanetriylident Tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzene]a acetonitrile], α,α',α''-1,2,3-cyclopropanetriylidene tris[ 2,3,4,5,6-pentafluorobenzeneacetonitrile] and the like.

[0315] The second compound preferably has a hole transporting skeleton. The HOMO level of the hole transport material is not too high (shallow), and the carbazole skeleton and diphenyl A benzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton are preferred.

[0316] The second compound has a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and It is preferable that the second compound has at least one of a diamine and an anthracene skeleton. Aromatic amines having a substituent containing a benzofuran ring or a dibenzothiophene ring, naphtha Aromatic monoamines having an arylene ring, or 9-fluorenyl groups are bonded to the arylene groups via The amine may be an aromatic monoamine bonded to the nitrogen of the amine.

[0317] When the second compound has an N,N-bis(4-biphenyl)amino group, a long-life luminescence device is obtained. This is preferable because a vice can be made.

[0318] The second compound is, for example, N-(4-biphenyl)-6,N-diphenylbenzo[ b] Naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis( 4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2- d]Furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1B P), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6- Amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]na Futho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis( 4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBA Bnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl] -4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothio

[0113] -N-phenyl-4-biphenylamine (abbreviation: ThB A1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation Name: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyl BBAβNBi, 4,4'-diphenyl-4''-(6 ;1'-Binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4, 4'-Diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine ( Abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4''-(7-phenyl)na Butyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl BB A(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl ) Triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4 ''-(4;2'-Binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαN B) 4,4'-diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenyl Biphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2- naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-( 3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenyl Phenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[ 4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: TPB iAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: α NBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB) 1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl 4'-[4-(3- Phenyl-9H-carbazol-9-yl)phenyl]tris(1,1'-biphenyl) 4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazole-9 -yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenyl Nylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazol -N-[4-(1-naphthyl)phenyl]-9,9'-spiro Bi(9H-fluorene)-2-amine (abbreviation: PCBNBSF), N,N-bis([1, 1'-biphenyl]-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine N,N-bis([1,1'-biphenyl]-4-yl)-9, 9'-Spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-( 1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2- yl)-9,9'-spirobi(9H-fluorene)-4-amine (abbreviation: oFBiSF) , N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)di Benzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl ]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylurea MIN (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluorene- 9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-yl)triphenylamine mBPAFLP, 4-phenylfluoren-9-yl Nyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol PCBA1BP, 4,4'-diphenyl-3-yltriphenylamine 4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol PCBANOB, 4,4'-di(1-naphthyl-3-yl)triphenylamine 4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine ( Abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazole -3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBA SF), N-(1,1'-biphenyl-4-yl)-9,9-dimethyl-N-[4-(9 -Phenyl-9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine PCBBiF, 3,3'-(naphthalene-1,4-diyl)bis(9-phenyl) PCzN2), 4-(10-phenyl-9-anthranyl-9H-carbazole) 4'-(9-phenyl-9H-fluoren-9-yl)triphenylamine (abbreviation Examples include the FLPAPA.

[0319] <Hole transport layer> The hole transport layer 122 transports the holes injected by the hole injection layer 121 to the light emitting layer 123. This is the layer where

[0320] The hole transport layer 122 preferably comprises a third compound.

[0321] The third compound is a hole transporting material. A hole transporting material capable of transporting a hole can be used.

[0322] The HOMO level of the third compound is preferably equal to or lower than the HOMO level of the second compound. The difference between the HOMO level of the third compound and the HOMO level of the second compound is 0.2 eV. It is preferable that the range is within 100 mm.

[0323] The second compound and the third compound each have a carbazole skeleton, a dibenzofuran skeleton, It is preferable that the compound has at least one of a dibenzothiophene skeleton and an anthracene skeleton. I wish.

[0324] The second compound and the third compound have the same hole transporting skeleton (particularly, a dibenzofuran skeleton). This is preferable because it allows smooth hole injection.

[0325] It is more preferable that the second compound and the third compound are the same, since the injection of holes becomes smooth. I wish.

[0326] When the hole transport layer 122 has a laminated structure, each layer constituting the hole transport layer 122 has a function of emitting holes. This is a layer that transports light to the optical layer 123.

[0327] The hole transport layer 122a in FIG. 18(C) and FIG. 18(D) is the hole transport layer 122a in FIG. It may have a similar structure to the transport layer 122 .

[0328] The hole transport layer 122b in FIG. 18(C) and FIG. 18(D) (i.e., the hole transport layer 122 Among these, the layer closest to the light-emitting layer 123) has a function as an electron blocking layer. is preferred.

[0329] The hole transport layer 122b preferably comprises a fourth compound.

[0330] The fourth compound is a hole transport material. A hole transporting material capable of transporting a hole can be used.

[0331] The HOMO level of the fourth compound is preferably lower than the HOMO level of the third compound. The difference between the HOMO level of the fourth compound and the HOMO level of the third compound is within 0.2 eV. It is preferable that:

[0332] The second compound, the third compound, and the fourth compound each have a carbazole skeleton, a dibenzo At least one of a benzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton It is preferred that the compound has the formula:

[0333] The second compound, the third compound, and the fourth compound have the same hole transporting skeleton (particularly dibenzo The presence of a furan skeleton is preferable since it facilitates the injection of holes.

[0334] As mentioned above, for the second and third compounds (and even the fourth compound), HO The difference in MO level is small, or the hole transporting skeleton (preferably the same hole transporting skeleton) is used. By having such a structure, holes are smoothly injected into the hole injection layer and the hole transport layer, and the driving voltage This can prevent the increase in the charge transport rate and the shortage of holes in the light-emitting layer 123.

[0335] <Light-emitting layer> The light-emitting layer is a layer that contains a light-emitting substance. The light-emitting layer may contain one or more light-emitting substances. The luminescent materials are blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. In addition, as the luminescent material, a material that emits near-infrared light is used. can also be used.

[0336] The light-emitting layer contains one or more organic compounds (host materials) in addition to the light-emitting material (guest material). The organic compound may include one or more organic compounds. Use of one or both of a hole transporting material and an electron transporting material described in the embodiment In addition, a bipolar material may be used as one or more organic compounds. stomach.

[0337] The light-emitting material that can be used in the light-emitting layer is not particularly limited, and can have a singlet excitation energy of Luminescent substances that emit light in the visible or near infrared regions, or triplet excitation energy It is possible to use a luminescent material that converts the light emitted from the source into light in the visible or near infrared range.

[0338] Examples of luminescent substances that convert singlet excitation energy into luminescence include fluorescent substances. For example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, Rubazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxa Sarin derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthracene derivatives Pyrene derivatives, naphthalene derivatives, etc. are examples. Pyrene derivatives in particular have a high luminescence quantum yield. A specific example of the pyrene derivative is N,N'-bis(3-methylphenyl). -N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene N,N'-diphenyl -N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene N,N'-bis(dibenzofuran-1,6-diamine (abbreviation: 1,6FLPAPrn), 1,6FrA Prn), N,N'-bis(dibenzothiophene-2-yl)-N,N'-diphenylpi Pyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6- diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine ](abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N -Phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6B nfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenyl 1,6-Benzo[b]naphtho[1,2-d]furan)-8-amine (abbreviation: 1,6BnfA Prn-03) are particularly notable. Representative pyrene diamine compounds such as FLPAPrn and 1,6BnfAPrn-03 The condensed aromatic diamine compounds have high hole trapping properties, and are excellent in luminous efficiency and reliability. Therefore, it is preferable.

[0339] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2, 2'-Bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl- 9-Anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2B Py), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N' -Diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-cal 4'-(10-phenyl-9-anthryl)-4'-(10-phenyl-9-benzol-9-yl)triphenylamine (Abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl Phenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-di Phenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo PCAPA, 4-(10-phenyl-9-anthryl)-4 '-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC BAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9- Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA) ), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP ), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1- phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine](abbreviation Name: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-phenyl] N-(2-phenyl)-9H-carbazol-3-amine (abbreviation: 2PCAPPA), -[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-tri Phenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), 3,10-bis[N -(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2 ,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)- 02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]na Futo[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf( IV)-02) etc. can be used.

[0340] Examples of luminescent materials that convert triplet excitation energy into luminescence include phosphorescent materials and thermally activated Thermally activated delayed fluorescence Examples include TADF (Transverse Adaxial Filament) materials.

[0341] Examples of phosphorescent materials include those having a 4H-triazole skeleton, a 1H-triazole skeleton, and an isopropyl alcohol. Organometallic compounds having a midazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton Complexes (especially iridium complexes) with phenylpyridine derivatives having electron-withdrawing groups as ligands Examples of the organic complex include an organometallic complex (particularly an iridium complex), a platinum complex, and a rare earth metal complex.

[0342] Blue or green, with a peak wavelength of 450 nm or more and 570 nm or less in the emission spectrum. Some phosphorescent materials include the following:

[0343] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl )-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium (III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4 -diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir (Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl [Ir(iPrPrp tz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl Ir(iPr5b tz)3]), organometallic complexes with a 4H-triazole skeleton, such as tris[3-methyl 1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato Iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl -5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) ) (abbreviation: [Ir(Prptz1-Me)3]) The organometallic complex fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl [Ir(iPrpmi)3] ), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]furan [Phenanthridine]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3] Organometallic complexes with imidazole skeletons such as bis[2-(4',6'-difluoro (phenyl)pyridinato-N,C 2’ ]Iridium(III) tetrakis(1-pyrazolyl) FIr6, bis[2-(4',6'-difluorophenyl)pyridine Zinat-N,C 2’ ]Iridium(III) picolinate (abbreviation: FIrpic), bis {2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’} Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), Bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium( III) Acetylacetonate (abbreviation: FIr(acac)) has an electron-withdrawing group Examples of such a complex include an organometallic complex having a phenylpyridine derivative as a ligand.

[0344] It has a green or yellow color and the peak wavelength of the emission spectrum is between 495 nm and 590 nm. Some phosphorescent materials include the following:

[0345] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)i Iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bi Bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(m ppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4 -phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(a cac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenyl [Pyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]) , (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl Rupyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac) ]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethyl phenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation :[Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4 ,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2( Organometallic iridium complexes with pyrimidine skeletons such as (acetylated acac)] cetonato)bis(3,5-dimethyl-2-phenylpyrazinate)iridium(III)( Abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5 -isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: Organometallic compounds with pyrazine skeletons such as [Ir(mppr-iPr)2(acac)] Iridium complex, tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’ ) Iridi Ir(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), (benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [I r(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(II I) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato- N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(a cac)]), [2-(4-phenyl-2-pyridinyl-κN)phenyl-κC]bis[ 2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir( ppy)2(4dppy)]), bis[2-(2-pyridinyl-κN)phenyl-κC] [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC] An organometallic iridium complex with a pyridine skeleton, bis(2,4-diphenyl-1,3-phenyl) Xazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir( dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl] Pyridinate-N,C 2’}Iridium(III) acetylacetonate (abbreviation: [Ir( p-PF-ph)2(acac)]), bis(2-phenylbenzothiazolato-N,C 2 ’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(bt)2(acac) ]), as well as tris(acetylacetonato)(monophenanthroline) Rare earth metals such as terbium(III) (abbreviation: [Tb(acac)3(Phen)]) Examples include complexes of the aryl group.

[0346] Yellow or red, with a peak wavelength of 570 nm or more and 750 nm or less in the emission spectrum. Some phosphorescent materials include the following:

[0347] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinium] dinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), S[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)yl Ir(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di (Naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) ) (abbreviation: [Ir(d1npm)2(dpm)]), tris(4-t-butyl-6-phenyl Nylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]) A novel organometallic complex with a pyrimidine skeleton, (acetylacetonato)bis(2,3,5-tetraacetato) Triphenylpyrazinate)iridium(III) (abbreviation: [Ir(tppr)2(acac )]), bis(2,3,5-triphenylpyrazinate)(dipivaloylmethanato)iridine Ir(III) (abbreviation: [Ir(tppr)2(dpm)]), bis{4,6-dimethyl -2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]fu C}(2,6-dimethyl-3,5-heptanedionato-κ 2 O,O') Iridescent Ir(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), bis{4,6 -Dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-di methylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethylphenyl Methyl-3,5-heptanedionate-κ 2 O,O') Iridium(III) (abbreviation: [I r(dmdppr-dmCP)2(dpm)]), (acetylacetonato)bis[2-methyl Chil-3-phenylquinoxalinato-N,C 2’ ]Iridium(III) (abbreviation: [Ir (mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoline Xalinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(dpq)2(acac )]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxa iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), bis{ 4,6-Dimethyl-2-[5-(5-cyano-2-methylphenyl)-3-(3,5-di methylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethylphenyl Methyl-3,5-heptanedionato-κ2O,O')iridium(III) (abbreviation: [I Organometallic compounds with pyrazine skeletons such as r(dmdppr-m5CP)2(dpm)] Complexes and tris(1-phenylisoquinolinato-N,C 2’ ) Iridium (III) (abbreviation Name: [Ir(piq)3]), Bis(1-phenylisoquinolinato-N,C 2’ ) Iridi Ir(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), Su[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC](2,4-pentanedione Tandione-κ 2 O,O') Iridium(III) and other organic compounds with pyridine skeletons Metal complex, 2,3,7,8,12,13,17,18-octaethyl-21H,23H- Platinum complexes such as porphyrin platinum(II) (abbreviation: [PtOEP]), tris(1,3 -Diphenyl-1,3-propanedionato)(monophenanthroline)europium(I II) (abbreviation: [Eu(DBM)3(Phen)]), tris[1-(2-thenoyl)- 3,3,3-Trifluoroacetonato](monophenanthroline)europium(III) ) (abbreviation: [Eu(TTA)3(Phen)]).

[0348] The organic compounds used in the light-emitting layer (host materials, assist materials, etc.) are Select one or more substances that have an energy gap larger than the energy gap. It can be used.

[0349] As for organic compounds to be used in combination with fluorescent substances, the energy level of the singlet excited state is It is preferable to use an organic compound having a large molecular weight and a small energy level in the triplet excited state. .

[0350] Although some of the above specific examples overlap, preferred examples of the luminescent substances (fluorescent substances, phosphorescent substances) From the viewpoint of combination, specific examples of organic compounds are shown below.

[0351] Organic compounds that can be used in combination with fluorescent materials include anthracene derivatives. tetracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, dibenzo Examples of such compounds include condensed polycyclic aromatic compounds such as zo[g,p]chrysene derivatives.

[0352] Specific examples of organic compounds (host materials) used in combination with fluorescent substances include 9-fluorophenyl phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol PCzPA, 3,6-diphenyl-9-[4-(10-phenyl-9-an 3-[4-(1-naphthalene)phenyl]-9H-carbazole (abbreviation: DPCzPA), 9,1-phenyl)-9-phenyl-9H-carbazole (abbreviation: PCPN), 0-Diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[4- (10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation Name: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation Name: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-( 10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazole-3-a PCAPBA, N-(9,10-diphenyl-2-anthryl)-N,9 -Diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), 6,12-di Methoxy-5,11-diphenylchrysene, N,N,N',N',N'',N'',N' '',N'''-Octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraphenyldibenzo[g,p]chrysene tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthracenyl) phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9- anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCz PA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b ]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4 -(9-phenyl-9H-fluoren-9-yl)-biphenyl-4'-yl}-ant Helical (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl)anthracene 9,10-di(2-naphthyl)anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA) , 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-Bu DNA), 9,9'-bianthryl (abbreviation: BANT), 9,9'-(stilbene-3, 3'-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4 '-diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl )benzene (abbreviation: TPB3), 5,12-diphenyltetracene, 5,12-bis(biphenyl) phenyl-2-yl)tetracene, 9-(1-naphthyl)-10-[4-(2-naphthyl )phenyl]anthracene (abbreviation: αN-βNPAnth).

[0353] As an organic compound to be used in combination with a phosphorescent substance, a compound having a triplet excitation energy of the luminescent substance is used. - (energy difference between the ground state and the triplet excited state) An organic compound may be selected.

[0354] A plurality of organic compounds (e.g., a first host material and a second host material) are reacted to form an exciplex. When using a light-emitting material in combination with a support material (or assist material, etc.), It is preferable to use a mixture of a plurality of organic compounds with a phosphorescent material (particularly an organometallic complex). .

[0355] With this structure, the energy transfer from the exciplex to the luminescent material, Ex Using TET (Exciplex-Triplet Energy Transfer) In addition, the combination of multiple organic compounds can be used as the excitation light source. A compound that easily forms an electron-doped complex and easily accepts holes (hole transport material) and It is particularly preferable to combine it with a compound that easily accepts electrons (electron transporting material). The formation of an exciplex that emits light with a wavelength that overlaps with the lowest energy absorption band of the luminescent material. By selecting a combination that allows for smooth energy transfer and efficient Specific examples of the hole transport material and the electron transport material are as follows: The material described in this embodiment can be used. It is possible to simultaneously achieve high efficiency, low voltage operation, and long life.

[0356] As a combination of materials that form an exciplex, the HOMO level of the hole transport material is It is preferable that the LUMO level of the hole transport material is equal to or higher than the HOMO level of the hole transport material. It is preferable that the LUMO level of the material is equal to or higher than the LUMO level of the electron transport material. The MO and HOMO levels were measured by cyclic voltammetry (CV) measurements. The potentials can be derived from the electrochemical properties (reduction and oxidation potentials) of the materials being used.

[0357] The formation of an exciplex can be used to determine the emission spectrum of a hole transport material, the emission spectrum of an electron transport material, etc. The emission spectra of the mixed films were compared. The spectrum shifts to longer wavelengths than the emission spectrum of each material (or a new peak appears on the longer wavelength side). This can be confirmed by observing the phenomenon of hole transporting material. Transient photoluminescence (PL) of electron transport materials and the mixture of these materials The transient PL lifetime of the mixed film was compared, and it was found that the transient PL lifetime of the mixed film was longer than that of each material. Differences in the transient response, such as the presence of long-lived components or a larger proportion of delayed components, were observed. The above-mentioned transient PL can be confirmed by measuring the That is, the transient EL of the hole transport material, the electron The transient EL of the transport material and the mixed film of these materials are compared to observe the difference in the transient response. The formation of the exciplex can also be confirmed by

[0358] Organic compounds that can be used in combination with phosphorescent materials include aromatic amines ( Aromatic amine skeleton-containing compounds), carbazole derivatives (compounds having a carbazole skeleton dibenzothiophene derivatives (thiophene derivatives), dibenzofuran derivatives (furan derivatives) derivatives), zinc and aluminum metal complexes, oxadiazole derivatives, triazole derivatives Conductors, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, Pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, phenanthrene loline derivatives and the like.

[0359] Aromatic amines, carbazole derivatives, and dibenzothiophene, which are organic compounds with high hole transport properties, Specific examples of dibenzofuran derivatives include the following substances.

[0360] The carbazole derivatives include bicarbazole derivatives (e.g., 3,3'-bicarbazole, derivatives) and aromatic amines having a carbazolyl group.

[0361] Specific examples of bicarbazole derivatives (e.g., 3,3'-bicarbazole derivatives) include 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9 '-Bis(1,1'-biphenyl-4-yl)-3,3'-bi-9H-carbazole, 9 ,9'-Bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole , 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4-yl )-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthalene β-N-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCC P) and others.

[0362] Specific examples of aromatic amines having a carbazolyl group include PCBA1BP, N-(4 -biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl PCBiF, PCBBiF, PCBBi 1BP, PCBANB, PCBNBB, 4-phenyldiphenyl-(9-phenyl-9H -carbazol-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenyl Nylcarbazol-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation Name: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9- Phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3 B) 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol PCBAF, PCBASF , 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenyl Phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole PC(3-yl)-N-phenylamino]-9-phenylcarbazole zPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl] N-amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 3-[N-(4- Diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation :PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenyl nylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-bis[N -(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenyl Carbazole (abbreviation: PCzTPN2), 2-[N-(9-phenylcarbazole-3-yl) N-phenylamino]spiro-9,9'-bifluorene (abbreviation: PCASF), -[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenyl Aniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazol-9-yl)fluoride] phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation Name: YGA2F), 4,4',4''-tris(carbazol-9-yl)triphenyl amine (abbreviation: TCTA) and the like.

[0363] In addition to the above, the carbazole derivatives include 3-[4-(9-phenanthryl)- Nyl]-9-phenyl-9H-carbazole (abbreviation: PCPPn), PCPN, 1,3- Bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl) ) Biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenyl CzTP, 1,3,5-tris[4-(N-carbazolyl )phenyl]benzene (abbreviation: TCPB), CzPA, etc.

[0364] Thiophene derivatives (compounds having a thiophene skeleton) and furan derivatives (compounds having a furan skeleton) Specifically, the compound that yl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl- 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene DBTFLP-III, 4-[4-(9-phenyl-9H-fluorene-9 -yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV) Which compound has a thiophene skeleton, 4-{3-[3-(9-phenyl-9H-fluorene phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II ) etc.

[0365] Specific examples of aromatic amines include 4,4'-bis[N-(1-naphthyl)-N-phenyl]amine. N,N'-bis(3-methylamino)biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl )-N-phenylamino]biphenyl (abbreviation: BSPB), BPAFLP, mBPAFL P, N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl -2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)a 9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N- (9,9-Dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenyl Amine (abbreviation: DPNF), 2-[N-(4-diphenylaminophenyl)-N-phenyl 2,7-bis[N- (4-diphenylaminophenyl)-N-phenylamino]-spiro-9,9'-bifluor Diphenylmethane (abbreviation: DPA2SF), 4,4',4''-tris[N-(1-naphthyl)-N -Phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4'' -Tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4, 4',4''-Tris[N-(3-methylphenyl)-N-phenylamino]triphenyl m-MTDATA, N,N'-di(p-tolyl)-N,N'-diphenylamine Nyl-p-phenylenediamine (DTDPPA), 4,4'-bis[N-(4-diphenyl 4,5-Diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4'-Bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl nyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), 1,3,5-tris[ N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA 3B) etc.

[0366] An example of an organic compound with high hole transport properties is poly(N-vinylcarbazole) (abbreviation: PVK ), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{ N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino} Poly[N,N'-bis(4-butylphenyl)methacrylamide] (abbreviation: PTPDMA), Poly(phenyl)-N,N'-bis(phenyl)benzidine (abbreviation: Poly-TPD) Any polymeric compound can be used.

[0367] Specific examples of zinc and aluminum metal complexes, which are organic compounds with high electron transport properties, include , tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), tris(4- Methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), bis(10 -Hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis (2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), etc. Examples of the metal complex include a metal complex having a quinoline skeleton or a benzoquinoline skeleton.

[0368] In addition, bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: Zn PBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: Zn Metal complexes with oxazole or thiazole ligands such as BTZ can also be used. can be done.

[0369] Oxadiazole derivatives, triazole derivatives, and benzaldehyde derivatives, which are organic compounds with high electron transport properties, Benzoimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, Specific examples of tetralin derivatives include 2-(4-biphenylyl)-5-(4-tert-butyl)- 1,3-bis[5-phenyl]-1,3,4-oxadiazole (abbreviation: PBD), (p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene OXD-7, 9-[4-(5-phenyl-1,3,4-oxadiazole- 2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl) (4-tert-butylphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazolidine (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl p-EtTAZ , 2-{4-[9,10-di(naphthalene-2-yl)-2-anthryl]phenyl}- 1-Phenyl-1H-benzimidazole (ZADN), 2,2',2''-(1 ,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole)(abbreviation Name: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl mDBTBIm-II, 4,4'-bis(5- Methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), bathophenanthrene Loline (abbreviation: Bphen), Bathocuproine (abbreviation: BCP), 2,9-bis(naphthalene) 4,7-diphenyl-1,10-phenanthroline (NBp hen), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h] Quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophene -4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDB TBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3 -yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-( 3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]ky Noxalin (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophene-4- 7mDBTPDBq-II , and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quino Examples include xaline (abbreviation: 6mDBTPDBq-II).

[0370] Heterocyclic compounds with diazine skeletons and triazine skeletons, which are organic compounds with high electron transport properties, Specific examples of heterocyclic compounds having a pyridine skeleton include 4,6 -Bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPn P2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation : 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl) 4,6mCzP2Pm, 2-{4-[3-(N-phenyl)phenyl]pyrimidine phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl} -4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3 -(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl mPCCzPTzn-02), 2-[ 3'-(9,9-dimethyl-9H-fluoren-2-yl)-1,1'-biphenyl-3 -yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2 -[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobiphenyl] (9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn ), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl ]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTz n), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl mBnfBPT zn-02), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridin 35DCzPPy, 1,3,5-tri[3-(3-pyridyl)phenyl]benzyl Examples include TmPyPB.

[0371] As an organic compound with high electron transport properties, poly(2,5-pyridinediyl) (abbreviation: PPy ), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3 ,5-diyl)] (abbreviation: PF-Py), poly[(9,9-dioctylfluorene-2, 7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-B Polymers such as .Py) can also be used.

[0372] TADF materials are materials that have an S1 level (energy level of the singlet excited state) and a T1 level (energy level of the triplet excited state). The difference between the triplet excited energy and the energy level of the triplet excited state is small, and the It is a material that has the function of converting energy from fluorine to singlet excitation energy. Therefore, the triplet excitation energy can be converted to singlet excitation energy by a small amount of thermal energy. It is possible to upconvert (reverse intersystem crossing) the singlet excited state efficiently. It is also possible to convert triplet excitation energy into luminescence. Thermally activated delayed fluorescence The condition for efficient obtaining is that the energy difference between the S1 level and the T1 level is 0 eV or more. 2 eV or less, preferably 0 eV or more and 0.1 eV or less. Delayed fluorescence in DF materials has a spectrum similar to that of normal fluorescence, but has a significantly longer lifespan. Its life span is 10 -6 seconds or more, preferably 10 -3 More than seconds.

[0373] In an exciplex that forms an excited state with two types of substances, the difference between the S1 and T1 levels is extremely small. TADF materials that can convert triplet excitation energy into singlet excitation energy It has the function as follows.

[0374] As an indicator of the T1 level, the phosphorescence spectrum observed at low temperatures (e.g., from 77 K to 10 K) As for the TADF material, the fluorescent material with a short wavelength tail is used. Draw a line, and the energy of the wavelength of the extrapolated line is the S1 level. When a tangent line is drawn at the tail and the energy of the wavelength of the extrapolated line is the T1 level, the S1 The difference between T1 and T2 is preferably 0.3 eV or less, and more preferably 0.2 eV or less. preferable.

[0375] The TADF material may be used as a guest material or as a host material.

[0376] Examples of TADF materials include fullerenes and their derivatives, and acridines such as proflavine. Derivatives, eosin, etc. Also, magnesium (Mg), zinc (Zn), cadmium (Cd) Cd, Sn, Pt, In, or Palladium Examples of metal-containing porphyrins include those containing Pd. For example, protoporphyrin-tin fluoride complex (abbreviation: SnF2(Proto IX)) , mesoporphyrin-tin fluoride complex (abbreviation: SnF2(Meso IX)), hematopoietin Lufirin-Tin Fluoride Complex (abbreviation: SnF2 (Hemato IX)), Coproporf Fluorine tetramethyl ester-tin fluoride complex (abbreviation: SnF2(Copro III- 4Me), Octaethylporphyrin-Tin Fluoride Complex (abbreviation: SnF2(OEP)) , etioporphyrin-tin fluoride complex (abbreviation: SnF2(Etio I)), octaethylene Examples include thylporphyrin-platinum chloride complex (abbreviation: PtCl2OEP).

[0377] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[ 2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-T RZ), PCCzPTzn, 2-[4-(10H-phenoxazin-10-yl)phenyl 3,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[ 4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5 -Diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9- Dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: AC RXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl ]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[ Acridine-9,9'-anthracen]-10'-one (abbreviation: ACRSA), 4-(9 '-Phenyl-3,3'-bi-9H-carbazol-9-yl)benzofuro[3,2-d ]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl-3,3'- Bi-9H-carbazol-9-yl)phenyl]benzofuro[3,2-d]pyrimidine ( Abbreviation: 4PCCzPBfpm), 9-[3-(4,6-diphenyl-1,3,5-triphenyl 9'-phenyl-2,3'-bi-9H-carbazole (abbreviation mPCCzPTzn-02) and other π-electron rich heteroaromatic rings and π-electron deficient heteroaromatic rings A heterocyclic compound having a ring can be used. The heterocyclic compound is a π-electron-rich heteroaromatic ring. Since it has an aromatic ring and a π-electron-deficient heteroaromatic ring, it has high electron transport properties and hole transport properties. It is preferable that an electron-withdrawing group such as a cyano group is bonded instead of the π-electron-deficient heteroaromatic ring. Alternatively, instead of the π-electron deficient heteroaromatic ring, a π-electron deficient heteroaromatic ring may be used. Similarly, instead of a π-electron rich heteroaromatic ring, a π-electron rich A scaffold can be used.

[0378] Among the skeletons that have a π-electron-deficient heteroaromatic ring, pyridine skeleton, diazine skeleton (pyrimidine The pyrazine skeleton, pyrazine skeleton, pyridazine skeleton, and triazine skeleton are stable and reliable. In particular, benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzo The furopyrazine and benzothienopyrazine skeletons have high electron-accepting properties and are highly reliable. preferable.

[0379] Among the skeletons having a π-electron-rich heteroaromatic ring, the acridine skeleton, the phenoxazine skeleton, and the fluorocarbon skeleton are The ethene skeleton, the furan skeleton, the thiophene skeleton, and the pyrrole skeleton are stable and reliable. It is preferable that the compound has at least one of the above skeletons because the above skeleton is excellent. skeleton, dibenzothiophene skeleton, indole skeleton, carbazole skeleton, indolocarbazo Carbazole skeleton, bicarbazole skeleton, 3-(9-phenyl-9H-carbazol-3-yl) The -9H-carbazole skeleton is preferred.

[0380] In addition, a substance in which a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring are directly bonded is The donor properties of the π-electron-rich heteroaromatic ring and the acceptor properties of the π-electron-deficient heteroaromatic ring are both strong. This is particularly preferred since it reduces the energy difference between the singlet excited state and the triplet excited state.

[0381] As the π-electron-rich skeleton, an aromatic amine skeleton, a phenazine skeleton, or the like can be used. The π-electron deficient skeletons include the xanthene skeleton, the thioxanthene dioxide skeleton, and the oxazine skeleton. Azole skeleton, triazole skeleton, imidazole skeleton, anthraquinone skeleton, phenylbon Boron-containing skeletons such as oran and boranthrene, nitriles such as benzonitrile and cyanobenzene aromatic rings or heteroaromatic rings having an aryl or cyano group, carbonyl skeletons such as benzophenone, A phosphine oxide skeleton, a sulfone skeleton, or the like can be used.

[0382] When using TADF materials as light-emitting substances, they are used in combination with other organic compounds. In particular, the above-mentioned host material (hole transport material, electron transport material) can be combined with the above-mentioned When a TADF material is used, the S1 level of the host material can be adjusted to the The T1 level of the host material is preferably higher than the S1 level of the TADF material. It is preferable that the concentration is higher than the above level.

[0383] Alternatively, a TADF material may be used as the host material, and a fluorescent material may be used as the guest material. When ADF material is used as a host material, triplet excitation energy generated in TADF material is is converted to singlet excitation energy by reverse intersystem crossing, and the energy is then transferred to the luminescent material. By moving the TADF material, the light-emitting efficiency of the light-emitting device can be increased. The material acts as the energy donor and the luminescent material acts as the energy acceptor. Therefore, using a TADF material as a host material is a good choice for a fluorescent material as a guest material. This is very effective when using a material with high luminous efficiency. The S1 level of the ADF material is preferably higher than the S1 level of the fluorescent material. The T1 level of the DF material is preferably higher than the S1 level of the fluorescent material. The T1 level of the DF material is preferably higher than the T1 level of the fluorescent emitting material.

[0384] In addition, T that emits light that overlaps with the lowest energy absorption band of the fluorescent material It is preferable to use ADF materials. This allows the TADF material to be converted into a fluorescent material. This is preferable because the transfer of excitation energy becomes smooth and light emission can be obtained efficiently.

[0385] In addition, singlet excitation energy is efficiently generated from triplet excitation energy by reverse intersystem crossing. In order for this to happen, it is preferable for carrier recombination to occur in the TADF material. The triplet excitation energy generated in the DF material is transferred to the triplet excitation energy of the fluorescent material. For this purpose, it is preferable that the fluorescent substance has a luminophore ( It is preferable that the compound has a protecting group around the skeleton that causes light emission. A substituent having no carbon atom is preferable, and a saturated hydrocarbon is preferable. Specifically, the substituent has 3 to 10 carbon atoms. The alkyl groups listed below, substituted or unsubstituted cycloalkyl groups with 3 to 10 carbon atoms, A trialkylsilyl group having a number of 3 to 10 is preferred, and a group having a plurality of protecting groups is more preferred. Substituents without π bonds have poor carrier transport function, and therefore have poor carrier transport and The distance between the TADF material and the luminophores of the fluorescent material can be reduced without affecting carrier recombination. Here, the luminophore is the molecule that causes the emission of light in a fluorescent substance. The luminophore preferably has a skeleton with a π bond and contains an aromatic ring. It is preferable that the aromatic ring has a condensed aromatic ring or a condensed heteroaromatic ring. The heterocyclic aromatic rings include phenanthrene skeletons, stilbene skeletons, acridone skeletons, and pheno In particular, the naphthalene skeleton, the anthracene skeleton, and the like can be used. skeleton, fluorene skeleton, chrysene skeleton, triphenylene skeleton, tetracene skeleton, pyrene skeleton It has a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton. Such fluorescent substances are preferred because they have high fluorescence quantum yields.

[0386] <Electron transport layer> The electron transport layer 124 is a layer that transports electrons injected from the cathode 102 to the light emitting layer 123. .

[0387] The electron transport layer 124 includes an electron transport material and a first substance.

[0388] Electron transporting materials have a higher ability to transport electrons than holes.

[0389] The electron transporting material used in the electron transport layer 124 has a highest occupied molecular orbital (HOMO) level of - It is preferably 6.0 eV or more.

[0390] The electron transporting material used in the electron transport layer 124 has an electric field strength [V / cm] square root of 600. The electron mobility at -7 cm 2 / Vs or more 1×10 -5 cm 2 / Vs or less It is preferable to use 1×10 -7 cm 2 / Vs or more 5×10 -5 cm 2 / Vs or less It is even more preferable.

[0391] The square root of the electric field strength [V / cm] of the electron transport material used in the electron transport layer 124 is 600. The electron mobility in the light-emitting layer 123 is such that the square root of the electric field strength [V / cm] of the host material is 600. It is preferable that the electron transport property in the electron transport layer 124 is smaller than that in the By lowering the temperature, the amount of electrons injected into the light-emitting layer 123 can be controlled. This can prevent the electron excess state from occurring.

[0392] The electron transporting material used in the electron transport layer 124 preferably has an anthracene skeleton. More preferably, the compound has an anthracene skeleton and a heterocyclic skeleton. As the nitrogen-containing five-membered ring skeleton, a pyrazole ring, an isopropyl ring, Nitrogen-containing rings containing two heteroatoms, such as midazole, oxazole, and thiazole rings It is particularly preferred that the ring has a five-membered ring structure.

[0393] In addition, some of the electron transporting materials that can be used as the host material and the fluorescent The materials listed above as materials that can be used as host materials in combination with optical materials are It can be used for the transport layer 124 .

[0394] The electron transport material used in the electron transport layer 124 is, for example, 2-{4-[9,10-diphenyl (Naphthalen-2-yl)-2-anthryl]phenyl}-1-phenyl-1H-benzo Imidazole (abbreviation: ZADN), 9-(1-naphthyl)-10-[4-(2-naphthyl )phenyl]anthracene (abbreviation: αN-βNPAnth), 9-[4-(10-phenyl 7-[[phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carba (abbreviation: cgDBCzPA) and

[0395] In addition, the electron transporting material used in the electron transport layer 124 may be the same as that used in the light emitting layer. An electron transporting material that can be used in combination with a fluorescent material, and an organic compound that can be used in combination with a fluorescent material A host material or the like can be used.

[0396] The first substance is a metal, a metal salt, a metal oxide, or an organometallic salt.

[0397] Metals include alkali metals, alkaline earth metals, and rare earth metals. Examples of these include Li, Na, K, Rb, Cs, Mg, Ca, Sr, and Ba.

[0398] Examples of metal salts include halides of the above metals and carbonates of the above metals. Specifically, LiF, NaF, KF, RbF, CsF, MgF2, CaF2, SrF2 , BaF2, LiCl, NaCl, KCl, RbCl, CsCl, MgCl2, CaCl 2, SrCl2, BaCl2, Li2CO3, Cs2CO3, etc.

[0399] Examples of metal oxides include oxides of the above metals. Specifically, Li2O, Examples include Na2O, Cs2O, MgO, CaO, etc.

[0400] The organometallic salts include, for example, organometallic complexes.

[0401] The first substance is an organometallic complex having an alkali metal or an alkaline earth metal. is preferred.

[0402] The first substance is a ligand having nitrogen and oxygen, and an alkali metal or alkaline earth metal. It is preferable that the organometallic complex has the formula:

[0403] The first substance has a quinolinol ligand and an alkali metal or an alkaline earth metal. It is preferable that the organometallic complex is an organometallic complex.

[0404] The organometallic complexes include 8-quinolinolatrium (abbreviation: Liq), 8-quinolinol Sodium 8-quinolinolate (Naq), potassium 8-quinolinate (Kq), bis(8 -quinolinolato)magnesium (abbreviation: Mgq2), bis(8-quinolinolato)zinc (abbreviation (known as Znq2) etc.

[0405] As the first substance, Liq is particularly preferable.

[0406] As shown in FIG. 18(D), the electron transport layer 124 is formed by stacking the electron transport layer 124a on the light emitting layer 123 side. and an electron transport layer 124b on the cathode 102 side. The transport layer 124b preferably has a different concentration ratio of the electron transport material to the first substance. For example, the electron transport layer 124a has a higher concentration of the first substance than the electron transport layer 124b. is preferred.

[0407] <Electron injection layer> The electron injection layer 125 is a layer that increases the efficiency of electron injection from the cathode 102. The difference between the work function value of the material and the LUMO level value of the material used in the electron injection layer 125 is It is preferable that the value is small (within 0.5 eV).

[0408] The electron injection layer 125 may include lithium, cesium, lithium fluoride (LiF), cesium fluoride, etc. CaF, 8-quinolinolatrium (abbreviation: Li q), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl LiPPy, 4-phenyl-2-(2-pyridinolatolithium Lithium diphenyl phenolate (LiPPP), lithium oxide (LiO x ), Carbonate Use of alkali metals, alkaline earth metals, or compounds thereof, such as sodium, etc. It is also possible to use rare earth metal compounds such as erbium fluoride (ErF3). The electron injection layer may be formed using an electride. For example, a material in which electrons are highly added to a mixed oxide of calcium and aluminum is one example. The above-mentioned substances constituting the electron transport layer can also be used.

[0409] In addition, the electron injection layer may be formed of a composite material containing an electron transport material and a donor material (electron donor material). Such composite materials are made by adding electrons to organic compounds by electron donors. In this case, the organic compound is a fluorine-containing compound. It is preferable that the material has excellent transport properties for the generated electrons. Specifically, for example, the above-mentioned electron Transporting materials (metal complexes, heteroaromatic compounds, etc.) can be used as electron donors. The electron donor may be any substance that exhibits electron donating properties to organic compounds. Alkaline earth metals and rare earth metals are preferred, and lithium, cesium, magnesium, calcium, Examples of the metal oxides include alkali metal oxides and alkali metal oxides. The lithium earth metal oxide is preferred, and lithium oxide, calcium oxide, barium oxide, etc. are preferred. Lewis bases such as magnesium oxide can also be used. An organic compound such as tetrathiafulvalene (abbreviation: TTF) can also be used.

[0410] <Charge generation layer> The charge generating layer 104 generates an electric charge from the EL layer 1 when a voltage is applied between the anode 101 and the cathode 102. The EL layer 103a has a function of injecting electrons and the EL layer 103b has a function of injecting holes.

[0411] The charge generating layer 104 may be formed by using a hole transport material and an acceptor material. The charge generating layer may have a structure including a charge transporting material and a donor material. By forming 104, the increase in driving voltage when an EL layer is laminated is suppressed. It is possible.

[0412] The hole transport material, the acceptor material, the electron transport material, and the donor material are The materials mentioned above can be used.

[0413] The light-emitting device of this embodiment is fabricated using a vacuum process such as a deposition method or a spin-coil method. Solution processes such as the inkjet method and the ink-jet method can be used. In this case, sputtering, ion plating, ion beam deposition, molecular beam deposition, Physical vapor deposition (PVD) methods such as air vapor deposition and chemical vapor deposition (CVD) methods can be used. In particular, the functional layers included in the EL layer (hole injection layer, hole transport layer, light emitting layer, electron transport layer, The electron injection layer can be formed by deposition (vacuum deposition, etc.), coating (dip coating, dip coating, etc.) coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, flexography (letterpress printing) method, The layer can be formed by a method such as a gravure method or a microcontact method.

[0414] The materials of the functional layers constituting the light-emitting device are not limited to the above-mentioned materials. For example, As materials for the functional layer, polymer compounds (oligomers, dendrimers, polymers, etc.), Low molecular weight and high molecular weight compounds (molecular weight between 400 and 4000), inorganic compounds As the quantum dot material, a colloidal Quantum dot materials, alloy type quantum dot materials, core-shell type quantum dot materials, core type quantum dot materials Materials such as PET can be used.

[0415] [Light-emitting model for light-emitting devices] A light emission model in the light emitting device of this embodiment will be described.

[0416] In this embodiment, a hole transport layer 122, a light emitting layer 123, and an electron transport layer 124 shown in FIG. The light-emitting device has a structure shown in FIG. The light emission model is not limited to this and can be applied to other configurations as well.

[0417] When the light-emitting layer 123 becomes an electron-rich state, as shown in FIG. A light emitting region 123-1 is formed in a local region. The width of the light-emitting region 123-1 is narrow. Therefore, the light is concentrated in a local region of the light-emitting layer 123. electron (e - ) and Hall (h + ) and recombine with the metal, accelerating degradation. The electrons that could not recombine in the light-emitting layer 123 pass through the light-emitting layer 123, and their lifetime is shortened. The life or luminous efficiency may be reduced.

[0418] On the other hand, in the light-emitting device according to one embodiment of the present invention, the electron transporting property in the electron transport layer 124 is reduced. By increasing the width of the light emitting region 123-1 in the light emitting layer 123, (FIG. 19(B) and FIG. 19(C)). By increasing the width of the light-emitting region 123-1, the light The recombination area of ​​electrons and holes in the layer 123 can be dispersed. It is therefore possible to provide a light emitting device having a long life and good luminous efficiency.

[0419] As shown in FIG. 19B, the light-emitting device of one embodiment of the present invention shows a recrystallization state at an early stage of driving. In some cases, the junction region extends to the electron transport layer 124 side. The recombination region in FIG. 4 is shown as region 124-1. In the device, the hole injection barrier is small at the beginning of operation, and the electron transport of the electron transport layer 124 is small. The relatively low transmittance of light emitting region 123-1 (i.e., the recombination region) of light emitting layer 12 3, and may also form a recombination region in the electron transport layer 124.

[0420] In addition, the HOMO level of the electron transport material contained in the electron transport layer 124 is set to −6.0 eV or higher. Since the temperature is relatively high, some of the holes reach the electron transport layer 124 and are regenerated in the electron transport layer 124. This phenomenon may occur when the host material (or the is an assist material) and the electron transporting material contained in the electron transport layer 124, This can occur even when the difference is within 0.2 eV.

[0421] As shown in FIG. 19C, the light-emitting device of one embodiment of the present invention This changes the carrier balance, making recombination in the electron transport layer 124 less likely to occur. The light-emitting region 123-1 remains formed over the entire light-emitting layer 123. By suppressing the recombination of carriers, the energy of the recombined carriers can be effectively contributed to light emission. Therefore, the luminance can be increased compared to the initial driving period. By offsetting the sudden drop in brightness that occurs when the device is first driven, known as initial deterioration, It is possible to provide a light-emitting device that has a small change in the emission characteristics and a long operating life. , Recombination-Site Tailoring of the above-mentioned light-emitting devices This is sometimes called the injection structure (ReSTI structure).

[0422] Here, the light-emitting device of this embodiment and the light-emitting device for comparison will be described with reference to FIG. The normalized luminance over time in FIG. 19D is shown by a thick solid line and a thick The light dashed line is a degradation curve of the normalized luminance of the light-emitting device of the present embodiment, and the thick dashed line is 1 is a degradation curve of normalized luminance of a comparative light-emitting device.

[0423] As shown in FIG. 19(D), the light-emitting device of this embodiment and the comparative light-emitting device The slopes of the degradation curves of normalized luminance are different from each other. The slope θ2 of the deterioration curve of the light emitting device for comparison is smaller than the slope θ1 of the deterioration curve of the light emitting device for comparison.

[0424] As shown in FIG. 19D, the light-emitting device of one embodiment of the present invention exhibits a constant current density. In the luminance degradation curve obtained by the driving test in the That is, the luminance of the light-emitting device according to one embodiment of the present invention increases with time. This behavior is called "initial deterioration" which is a rapid deterioration at the beginning of operation. However, the light-emitting device according to one embodiment of the present invention is not limited to the above. For example, as shown by the thick dashed line in FIG. 19D, the image does not have a maximum value of luminance, in other words, Therefore, the slope of the deterioration curve can be reduced without causing an increase in luminance. By configuring the device to exhibit this behavior, the initial deterioration of the light-emitting device is reduced, and The operating life can be significantly extended.

[0425] In addition, when the derivative of the deterioration curve having a maximum value is taken, there is a portion where the value becomes 0. The light-emitting device having a zero portion in the differential of the deterioration curve is regarded as a light-emitting device according to one embodiment of the present invention. It can be called a vice.

[0426] In the light-emitting device according to one embodiment of the present invention, the electron transport layer 124 is It is preferable to have a portion where the mixture ratio (concentration) of the transport material and the first substance is different. Typically, a mixture of an electron transporting material with a metal, a metal salt, a metal oxide, or an organometallic complex. It is preferable to have portions with different ratios (concentrations).

[0427] The concentration of the first substance in the electron transport layer 124 was measured by time-of-flight secondary ion mass spectrometry (T F-SIMS:Time-of-flight secondary ion mass The amount of atoms and molecules detected by spectrometry can be inferred. In the area where the material is composed of two different materials and the mixture ratio is different, ToF-SIMS analysis The magnitude of each detected value corresponds to the abundance of the target atom or molecule. Therefore, by comparing the detected amounts of the electron transport material and the organometallic complex, You can get a small idea.

[0428] The content of the first material in the electron transport layer 124 is higher on the cathode 102 side than on the anode 101 side. In other words, it is preferable that the concentration of the first substance is smaller on the anode 10 side than on the cathode 102 side. It is preferable that the electron transport layer 124 is formed so as to rise toward the first side. That is, the electron transport layer 124 is disposed closer to the light emitting layer 123 than the portion having a high concentration of the electron transport material. In other words, the electron transport layer 124 has a low concentration of the transport material. The portion having a higher concentration of the first substance is located closer to the light emitting layer 123 than the portion having a lower concentration.

[0429] In the electron transport layer 124, the portion where the concentration of the electron transporting material is high (the portion where the concentration of the first substance is low) The electron mobility in the region (part 1) is 1×10 at a square root of the electric field strength [V / cm] of 600. -7 cm 2 / Vs or more 5×10 -5 cm 2 It is preferable that the value is equal to or less than / Vs.

[0430] For example, the content (concentration) of the first substance in the electron transport layer 124 is as shown in FIG. 0(D). Note that FIG. 20(A) and FIG. 20(B) are diagrams showing the configuration of the electronic import 20(C) and 20(D) show the case where there is no clear boundary in the transport layer 124. This illustrates the case where there is a clear boundary within layer 124.

[0431] When there is no clear boundary in the electron transport layer 124, the concentrations of the electron transporting material and the first substance are As shown in FIG. 20(A) and FIG. 20(B), the electron transport layer 124 When there is a clear boundary between the electron transporting material and the first substance, the concentrations of the electron transporting material and the first substance are As shown in FIG. 0(D), the concentration of the electron transporting material and the first substance changes stepwise. If the change is step-like, it is suggested that the electron transport layer 124 is composed of multiple layers. For example, FIG. 20C shows a case where the electron transport layer 124 has a two-layer laminate structure. FIG. 20(D) shows a case where the electron transport layer 124 has a three-layer laminate structure. 20(D), the dashed lines represent the boundary regions of multiple layers.

[0432] The change in the carrier balance in the light-emitting device according to one embodiment of the present invention is This is believed to be caused by a change in electron mobility.

[0433] In the light-emitting device according to one embodiment of the present invention, a concentration difference of the first substance exists in the electron transport layer 124. The electron transport layer 124 is disposed between the region having a low concentration of the first substance and the light-emitting layer 123. The first substance has a high concentration region. That is, the first substance has a low concentration region. The cathode 102 is located closer to the cathode 102 than the other region.

[0434] The light-emitting device of one embodiment of the present invention having the above structure has an extremely long lifetime. If the initial brightness is 100%, the time it takes for the brightness to reach 95% (also called LT95) is It can be made extremely long.

[0435] This embodiment mode can be combined with other embodiment modes as appropriate.

[0436] (Embodiment 3) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS. do.

[0437] [Pixel circuit example 1] A display device according to one embodiment of the present invention includes a first pixel circuit having a light-receiving device and a light-emitting and a second pixel circuit having a device. The first pixel circuit and the second pixel circuit are The respective elements are arranged in a matrix.

[0438] FIG. 21(A) shows an example of a first pixel circuit having a light receiving device, and FIG. 21(B) shows 2 illustrates an example of a second pixel circuit having a light emitting device.

[0439] The pixel circuit PIX1 shown in FIG. 21A includes a light receiving device PD, a transistor M1, The transistor M2, the transistor M3, the transistor M4, and the capacitor C1. An example in which a photodiode is used as the light receiving device PD is shown.

[0440] The cathode of the light receiving device PD is electrically connected to the wiring V1, and the anode of the light receiving device PD is electrically connected to the wiring V2. The transistor M1 is electrically connected to either the source or drain of the transistor M2. The other of the source and drain is electrically connected to one electrode of the capacitance C1. The source or drain of transistor M2 is electrically connected to the gate of transistor M3. The transistor M2 has a gate electrically connected to the wiring RES and a source or drain The other input is electrically connected to the wiring V2. One of the source and drain is electrically connected to the wiring V3, and the other of the source and drain is The gate of the transistor M4 is electrically connected to the wiring S E, and the other of the source or drain is electrically connected to wiring OUT1.

[0441] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When D is driven with a reverse bias, a potential lower than the potential of the wire V1 is applied to the wire V2. The transistor M2 is controlled by a signal supplied to the wiring RES. A function to reset the potential of the node connected to the gate of the transistor M3 to the potential supplied to the wiring V2. The transistor M1 is controlled by a signal supplied to the line TX. The function of controlling the timing at which the potential of the above nodes changes depending on the current flowing through the PD is The transistor M3 serves as an amplifier transistor that outputs an output according to the potential of the node. The transistor M4 is controlled by a signal supplied to the line SE. A selection transistor is connected to the OUT1 wire to read out the output according to the potential of the board using an external circuit. It functions as a dialyzer.

[0442] The pixel circuit PIX2 shown in FIG. 21B includes a light emitting device EL, a transistor M5, Here, the light emitting device EL and the transistor M2 are connected to the power supply 11. In particular, an example of using an organic EL as the light-emitting device is shown. It is preferable to use an L device.

[0443] The transistor M5 has a gate electrically connected to the wiring VG and a source or drain is electrically connected to the wiring VS, and the other of the source or drain is one electrode of the capacitance C2, and electrically connected to the source or drain of transistor M6. One of the drains is electrically connected to the wiring V4, and the other is connected to the anode of the light-emitting device EL, Electrically connected to one of the source and drain of the transistor M7. The gate is electrically connected to the wiring MS, and the other of the source and drain is connected to the wiring OUT2. The cathode of the light-emitting device EL is electrically connected to the wiring V5.

[0444] A constant potential is supplied to the wiring V4 and the wiring V5. The cathode side can be at a higher potential than the anode side, and the cathode side can be at a lower potential than the anode side. M5 is controlled by a signal supplied to the wiring VG, and controls the selection state of the pixel circuit PIX2. The transistor M6 also functions as a select transistor to select The device functions as a driving transistor that controls the current flowing through the light-emitting device EL according to the potential applied to the device. When the transistor M5 is in a conductive state, the potential supplied to the wiring VS is The potential is supplied to the gate of M6, and the luminance of the light-emitting device EL is controlled according to the potential. The transistor M7 is controlled by a signal supplied to the wiring MS. It has a function to output the potential between M6 and the light emitting device EL to the outside via the wiring OUT2. do.

[0445] The cathode of the light receiving device PD is electrically connected to the wiring V1, and the cathode of the light emitting device EL is electrically connected to the wiring V2. The wiring V5 to which the nodes are electrically connected can be in the same layer and at the same potential.

[0446] Here, the pixel circuit PIX1 includes a transistor M1, a transistor M2, and a transistor M3, transistor M4, and transistor M5 and transistor M6 of pixel circuit PIX2. The transistor M6 and the transistor M7 each have a semiconductor layer in which a channel is formed. It is preferable to use a transistor using a metal oxide (oxide semiconductor).

[0447] A transistor using metal oxides that has a wider band gap and a lower carrier density than silicon. The transistor can realize an extremely small off-current. The charge stored in the capacitor connected in series with the transistor is maintained for a long period of time by the Therefore, it is possible to maintain the capacitance of the transistor connected in series to the capacitor C1 or the capacitor C2. The transistor M1, the transistor M2, and the transistor M5 are made of an oxide semiconductor. It is preferable to use a transistor that has been oxidized. Other transistors may also be oxidized in the same manner. By using a transistor using a compound semiconductor, manufacturing costs can be reduced.

[0448] In addition, the transistors M1 to M7 are made of silicon as a semiconductor in which channels are formed. In particular, transistors using single crystal silicon or polycrystalline silicon can also be used. By using highly crystalline silicon such as This is preferable since it enables faster operation.

[0449] In addition, an oxide semiconductor is used for at least one of the transistors M1 to M7. In addition to using transistors, a configuration using silicon-based transistors can also be used. good.

[0450] In addition, in FIG. 21(A) and FIG. 21(B), the transistor is an n-channel transistor. However, a p-channel transistor can also be used.

[0451] The transistors in the pixel circuit PIX1 and the transistors in the pixel circuit PIX2 are the same. It is preferable that they are formed side by side on one substrate. The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed and periodically arranged in one area. It is preferable to have a configuration in which the electrodes are arranged in a row.

[0452] In addition, a transistor and a capacitor are provided at a position overlapping with the light receiving device PD or the light emitting device EL. It is preferable to provide one or more layers having one or both of the above. The effective area occupied by the circuit can be reduced, and a high-definition light receiving section or display section can be realized.

[0453] [Pixel circuit example 2] FIG. 22(A) shows a block diagram of a pixel. The pixel shown in FIG. 22(A) has a switching transistor. Transistor (Switching Tr), Driving Transistor (Driving Tr), In addition to the light-emitting device (OLED), it also has memory.

[0454] The memory is supplied with data Data_W. In addition to the display data Data, data D When ata_W is supplied to the pixel, the current flowing to the light-emitting device increases, The device can express high brightness.

[0455] The display device according to one embodiment of the present invention captures an image using light emitted from a light-emitting device as a light source. The light reflected from the object is detected by a light receiving device. By driving the display data Data and the display data Data_W, a high brightness is achieved. The higher the brightness of the light-emitting device, the higher the signal-to-noise ratio. This can improve the sensitivity of the light detection by the light receiving device. can be done.

[0456] FIG. 22B shows a specific circuit diagram of the pixel circuit.

[0457] The pixel shown in FIG. 22B includes a transistor M1, a transistor M2, a transistor M3, It has a transistor M4, a capacitance Cs, a capacitance Cw, and a light emitting device EL.

[0458] Either the source or the drain of the transistor M1 is electrically connected to one electrode of the capacitance Cw. The other electrode of the capacitance Cw is connected to either the source or drain of the transistor M4. One of the source and drain of the transistor M4 is electrically connected to the transistor The gate of the transistor M2 is electrically connected to one of the electrodes of the capacitance Cs. The other electrode of the capacitor Cs is electrically connected to the source or drain of the transistor M2. One of the source and drain of the transistor M2 is electrically connected to , electrically connected to one of the source and drain of the transistor M3. One of the source and drain of M3 is electrically connected to one electrode of the light-emitting device EL. Each transistor shown in FIG. 22B has a back gate electrically connected to the gate. However, the backgate connection is not limited to this. It is not necessary to provide a port.

[0459] Here, the other electrode of the capacitance Cw, one of the source and drain of the transistor M4, The node to which the gate of the transistor M2 and one electrode of the capacitance Cs are connected is defined as a node NM. The other electrode of the capacitance Cs, one of the source and drain of the transistor M2, One of the source or drain of the transistor M3 and one of the electrodes of the light-emitting device EL are connected to The connected node is assumed to be node NA.

[0460] The gate of the transistor M1 is electrically connected to the wiring G1. The gate of the transistor M4 is electrically connected to the wiring G2. The other of the source and drain of the transistor M1 is electrically connected to the wiring DATA. The other of the source and drain of the transistor M3 is electrically connected to the wiring V0. The other of the source and drain of the transistor M4 is connected to the wiring DATA_W. are electrically connected.

[0461] The other of the source or drain of the transistor M2 is electrically connected to the wiring ANODE (high potential side). The other electrode of the light-emitting device EL is connected to the wiring CATHODE (low potential side). are electrically connected.

[0462] The wiring G1 and the wiring G2 function as signal lines for controlling the operation of the transistors. The wiring DATA functions as a signal line for supplying an image signal to the pixel. The wiring DATA_W is a signal line for writing data to the memory circuit MEM. The wiring DATA_W can function as a line. The wiring V0 can function as a signal line. It also functions as a monitor line to acquire the current from the wiring V0 to the transistor M3. By supplying a specific potential to the other electrode of the capacitance Cs via the It can also be stabilized.

[0463] The transistor M2, the transistor M4, and the capacitance Cw constitute a memory circuit MEM. The node NM is a storage node, and by making the transistor M4 conductive, the wiring DATA_W A signal supplied to the node NM can be written to the node NM. By using a transistor with a low current, the potential of the node NM can be held for a long time. do.

[0464] The transistor M4 is, for example, a transistor using a metal oxide in a channel formation region ( Hereinafter, an OS transistor) can be used. The current can be made extremely low, and the potential of the node NM can be maintained for a long period of time. In this case, it is preferable to use OS transistors for other transistors constituting the pixel. For specific examples of the metal oxide, refer to Embodiment 1.

[0465] Since the OS transistor has a large energy gap, it exhibits extremely low off-state current characteristics. In addition, OS transistors have the following problems: impact ionization, avalanche breakdown, and short-channel effect. The transistors that have silicon in the channel formation region (hereafter, Si transistors) are It has different characteristics from the conventional resistors, and can form highly reliable circuits.

[0466] In addition, a Si transistor may be used for the transistor M4. It is also preferable to use Si transistors for the other transistors to be used.

[0467] The Si transistors include transistors with amorphous silicon and crystalline silicon. A transistor having a junction (typically low-temperature polysilicon), a transistor having a single crystal silicon Transistors and the like.

[0468] Furthermore, one pixel may have both an OS transistor and a Si transistor. .

[0469] In the pixel, the signal written to the node NM is the image signal supplied from the wiring DATA. The transistor M1 is capacitively coupled to the pixel The function may include selecting:

[0470] In other words, if a desired correction signal is stored in the node NM, the correction signal is applied to the supplied image signal. Note that the correction signal may be attenuated by elements on the transmission path. Therefore, it is preferable to generate the signal taking this attenuation into consideration.

[0471] By making the light-emitting device emit light using the image signal and the correction signal, the current flowing through the light-emitting device is This allows a larger current to be applied, resulting in higher brightness. This allows the power consumption of the source driver to be reduced by applying the same voltage to the gate of the drive transistor. Since a high-brightness light source can be used, the sensitivity of the sensor can be improved. It can be improved.

[0472] This embodiment mode can be combined with other embodiment modes as appropriate.

[0473] (Embodiment 4) In this embodiment, electronic devices according to one embodiment of the present invention will be described with reference to FIGS. do.

[0474] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can be used as the display portion. The device has a light detection function, so it can perform biometric authentication on the display or by touching the screen. In other words, the receiving element of the display device of one embodiment of the present invention can detect a near touch. The optical device can function as a part of a touch sensor or touch panel. This can improve the functionality and convenience of electronic devices.

[0475] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Social computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples of such devices include audio playback devices, etc.

[0476] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays) It may be possible.

[0477] The electronic device of the present embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, and running various software (programs) function, wireless communication function, and function for reading out programs or data recorded on a recording medium etc.

[0478] The electronic device 6500 shown in FIG. 23(A) is a mobile device that can be used as a smartphone. It is an information terminal.

[0479] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0480] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0481] FIG. 23B is a schematic cross-sectional view including the end portion of the housing 6501 on the microphone 6506 side.

[0482] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. In the space surrounded by the protective member 6510, a display panel 6511, an optical member 6512, a touch panel 6513, and a touch panel 6514 are arranged. A sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged. .

[0483] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The screw 6513 is fixed in place by an adhesive layer (not shown).

[0484] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The folded part is connected to the FPC6515. C6516 is mounted on the FPC6515. is connected to a child.

[0485] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, it is possible to realize an extremely lightweight electronic device. Because it is thin, it is possible to mount a large-capacity battery 6518 while keeping the thickness of the electronic device small. Also, a part of the display panel 6511 can be folded back and the FPC 6515 and the back side of the pixel area can be attached. By arranging the connection parts, it is possible to realize an electronic device with a narrow frame.

[0486] FIG. 24A shows an example of a television device. A television device 7100 includes a housing 71. A display unit 7000 is built into the housing 71. This shows a configuration that supports 01.

[0487] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0488] The television device 7100 shown in FIG. 24A is operated using an operation switch provided in a housing 7101. This can be done by a touch panel or a separate remote control 7111. The display unit 7000 may be provided with a touch sensor, and the television The remote control device 7111 may operate the remote control device 7100. The remote control 7111 may have a display unit for displaying information output from the remote control 7111. The channel and volume can be controlled using the operation keys or touch panel. , the image displayed on the display unit 7000 can be manipulated.

[0489] The television device 7100 includes a receiver and a modem. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be one-way (sender to receiver) or two-way It is also possible to communicate information in both directions (between sender and receiver, or between receivers). do.

[0490] FIG. 24B shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and a 213, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. It is being read.

[0491] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0492] 24(C) and 24(D) show an example of digital signage.

[0493] A digital signage 7300 shown in FIG. 24C includes a housing 7301, a display unit 7000, and and a speaker 7303. In addition, LED lamps, operation keys (power switch, may have a control switch, connection terminals, various sensors, a microphone, etc. do.

[0494] FIG. 24(D) shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 is a display unit 7000 provided along the curved surface of a pillar 7401. has.

[0495] In FIG. 24C and FIG. 24D, the display device of one embodiment of the present invention is used in the display portion 7000. can be applied.

[0496] The larger the display unit 7000, the more information can be displayed at one time. The wider the area, the more visible it is, and the more effective your advertising will be. Cut.

[0497] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows the route information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0498] Also, as shown in FIG. 24(C) and FIG. 24(D), a digital signage 7300 or Digital signage 7400 is a device that displays information on smartphones and other information terminals 731 carried by users. 1 or the information terminal 7411 via wireless communication. The advertisement information displayed on the display unit 7000 is input to the information terminal 7311 or the information terminal 741. 1. Also, the information terminal 7311 or the information terminal 741 By operating 1, the display on the display unit 7000 can be changed.

[0499] In addition, the digital signage 7300 or the digital signage 7400 is provided with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and have fun. It is possible to do so.

[0500] The electronic device shown in FIG. 25(A) to FIG. 25(F) includes a housing 9000, a display portion 9001, a speaker A conductor 9003, an operation key 9005 (including a power switch or an operation switch), a connection terminal Child 9006, sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, Light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation, (including functions to measure flow, humidity, gradient, vibration, odor, or infrared), 9008, etc.

[0501] The electronic devices shown in FIG. 25A to FIG. 25F have various functions. Functions for displaying information (still images, videos, text images, etc.) on the display unit, touch panel functions, Functions that display calendars, dates, or times, etc., and can be used with various software (programs) Therefore, the function of controlling the processing, the wireless communication function, the program recorded on the recording medium, or The electronic device can have the following functions: The electronic device may have a variety of functions, but is not limited to these. Also, a camera or the like may be provided in the electronic device to take still images or videos and store them on a recording medium (external or built into the camera) and the function of displaying the captured image on the display unit. It may be possible.

[0502] The electronic devices shown in FIGS. 25A to 25F will be described in detail below.

[0503] FIG. 25A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 is For example, it can be used as a smartphone. A portable information terminal 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. The terminal 9101 can display text and image information on multiple surfaces. 9 shows an example in which three icons 9050 are displayed. 51 may be displayed on another surface of the display unit 9001. An example of the information 9051 is as follows: Notifications of incoming e-mails, SNS, phone calls, etc., subject lines of e-mails and SNS, sender names , date and time, time, remaining battery level, antenna reception strength, etc. An icon 9050 or the like may be displayed in the position where is displayed.

[0504] FIG. 25B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 includes: The display unit 9001 has a function of displaying information on three or more screens. In the example shown in FIG. 9, information 9053 and information 9054 are displayed on different sides. The user holds the mobile information terminal 9102 in the breast pocket of his / her clothes. The user can also check information 9053 displayed in a position that can be observed from above 2. The user can check the display without taking the mobile information terminal 9102 out of his / her pocket, and can make a call, for example. You can decide whether or not to receive it.

[0505] FIG. 25C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 can communicate with, for example, a wireless headset. The mobile information terminal 9200 can also be used for hands-free conversation. The 9006 can transmit data to and from other information terminals and can also charge the device. The charging operation may be performed by wireless power supply.

[0506] 25(D) to 25(F) are perspective views showing a foldable portable information terminal 9201. FIG. 25(D) shows the portable information terminal 9201 in an unfolded state, and FIG. 25(F) shows the portable information terminal 9201 in a folded state. Folded state, Fig. 25(E) is in the process of changing from Fig. 25(D) to Fig. 25(F) The portable information terminal 9201 is highly portable when folded and can be easily deployed. When opened, the seamless, wide display area provides excellent visibility of the display. The display unit 9001 of the display device 201 is made up of three housings 900 connected by hinges 9055. For example, the display unit 9001 has a radius of curvature of 0.1 mm or more and 150 mm or less. It can be bent downwards.

[0507] This embodiment mode can be combined with other embodiment modes as appropriate.

[0508] <Reference example> In this reference example, the HOMO level, LUM The method of calculating the O level and the electron mobility will be described.

[0509] The HOMO and LUMO levels were calculated based on cyclic voltammetry (CV) measurements. It is possible.

[0510] In this reference example, an electrochemical analyzer (manufactured by BAS Co., Ltd., model 1) was used as the measuring device. The solution used in the CV measurement was the solvent. Then, dehydrated dimethylformamide (DMF) (Aldrich Co., Ltd., 99.8%, Catalog The supporting electrolyte was tetra-n-butylammonium perchlorate. 100g of n-Bu4NClO4 (Tokyo Chemical Industry Co., Ltd., catalog number: T0836) The sample is dissolved to a concentration of 2 mmol / L. The working electrode was a platinum electrode (B.A.S. Co., Ltd.). The auxiliary electrode was a platinum electrode (B.A.S. Co., Ltd., VC -3 Pt counter electrode (5 cm)) and Ag / Ag+ electrode (Be· The measurements were performed at room temperature (2 The scan rate during CV measurement was standardized to 0.1 V / sec. The oxidation potential Ea [V] and reduction potential Ec [V] of the electrode were measured. Ea is the oxidation-reduction potential. The intermediate potential of the reduction-oxidation wave is taken as Ec. The potential energy of the electrode relative to the vacuum level is found to be -4.94 eV. Therefore, the HOMO level [eV] = -4.94-Ea, and the LUMO level [eV] = -4 From the formula .94-Ec, the HOMO and LUMO levels can be calculated. do.

[0511] Electron mobility was measured by impedance spectroscopy (Impedance Spectroscopy: It can be measured using the IS method.

[0512] The carrier mobility of EL materials is measured by the transient photocurrent method (Time-of-flight:T OF method and space-charge-limited current The method of calculating the capacitance from the IV characteristics of the SCLC (nt:SCLC method) has been known for a long time. The TOF method requires a sample with a thickness that is considerably thicker than that of an actual organic EL device. The SCLC method has the disadvantage that the dependence of carrier mobility on electric field strength cannot be obtained. In this case, the thickness of the organic film required for measurement is thin, about several hundred nm, so a relatively small amount of EL material is used. This allows the film to be formed in a small amount of space, and the mobility can be measured with a film thickness close to that of an actual organic EL device. It is characterized by the fact that the dependence of carrier mobility on electric field strength can also be obtained.

[0513] In the IS method, a small sinusoidal voltage signal (V = V0 [exp(jωt)]) is applied to the EL device. Then, the current amplitude of the response current signal (I = I0exp[j(ωt+φ)]) and the input signal are The impedance (Z=V / I) of the EL device is calculated from the phase difference. By applying a voltage ranging from high frequency to low frequency to the EL device, the impedance Components with different relaxation times that contribute to the photon dance can be separated and measured.

[0514] Here, the admittance Y (= 1 / Z), which is the reciprocal of the impedance, is given by the following formula (1): It can be expressed as conductance G and susceptance B as shown below.

[0515]

number

[0516] Furthermore, by using the single charge injection model, The following equations (2) and (3) can be calculated: where g (equation (4)) is the differential conductance In the formula, C is the capacitance, θ is the travel angle, and ω represents the angular frequency. T is the transit time. The analysis uses the current equation, Poisson's equation, and the current continuity equation. The formula is used, ignoring the existence of diffusion current and trap levels.

[0517]

number

[0518] The method of calculating the mobility from the frequency characteristics of the capacitance is the -ΔB method. The ωΔG method is a method for calculating the mobility from the frequency characteristics of a carrier.

[0519] In practice, first, an electron-only device is fabricated from the material whose electron mobility is to be determined. A limited device is a device designed to allow only electrons to flow as carriers. In this specification, a method for calculating the mobility from the frequency characteristics of the capacitance (-ΔB method) will be described. do.

[0520] The structure of the electron-only device fabricated for the measurement is shown in Figure 26, and its specific configuration is shown in Table 1. The electron-only device fabricated in this reference example has a first electrode 901 (anode) and a second electrode A first layer 910, a second layer 911, and a third layer 912 are disposed between the electrode 902 (cathode). A material for which the electron mobility is to be determined may be used as the material of the second layer 911. So, 2-{4-[9,10-di(naphthalen-2-yl)-2-anthryl]phenyl }-1-phenyl-1H-benzimidazole (abbreviation: ZADN) and 8-quinolinolatri The electron mobility of a 1:1 (weight ratio) co-evaporated film of lithium (abbreviation: Liq) was measured. In this reference example, 7-[4-(10-phenyl-9-anthryl)phenyl] -7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA) and 2-[3 '-(Dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quino The electron mobility of xaline (abbreviation: 2mDBTBPDBq-II) was also measured.

[0521] [Table 1]

[0522] The electron-only device was fabricated using a co-evaporated film of ZADN and Liq as the second layer 911. The current density-voltage characteristics are shown in FIG.

[0523] The impedance measurement was performed by applying a DC voltage in the range of 5.0V to 9.0V while applying an AC voltage The measurements were performed under the conditions of a voltage of 70 mV and a frequency of 1 Hz to 3 MHz. The capacitance is calculated from the admittance (equation (1) above), which is the reciprocal of the impedance. The frequency characteristics of the calculated capacitance C at an applied voltage of 7.0 V are shown in FIG.

[0524] The frequency characteristic of capacitance C is the space charge caused by carriers injected by a small voltage signal. This occurs because the load cannot completely follow the minute AC voltage, and a phase difference occurs in the current. Here, the transit time of the carriers in the film is the time T for the injected carriers to reach the counter electrode. It is defined and expressed by the following equation (5).

[0525]

number

[0526] The negative susceptance change (-ΔB) is the capacitance change -ΔC multiplied by the angular frequency ω (-ωΔ C) The lowest frequency peak frequency f' max (=ω max / 2π) and From equation (3), the relationship between the row time T and the row time T can be derived as shown in equation (6) below.

[0527]

number

[0528] The frequency characteristics of -ΔB calculated from the above measurements (i.e., when the DC voltage is 7.0 V) are shown in Fig. 2. 9. The lowest frequency peak frequency f' obtained from FIG. max is indicated by the arrow in the figure. did.

[0529] f' obtained from the above measurements and analysis max Therefore, the travel time T can be calculated (equation (6)). From the above formula (5), the electron mobility at a voltage of 7.0 V can be calculated. The same measurements were performed at DC voltages ranging from 5.0V to 9.0V to determine the electric field strength at each voltage. ) can be calculated, so the dependence of mobility on electric field strength can also be measured.

[0530] The electric field strength dependence of the electron mobility of each organic compound finally obtained by the above calculation method. The characteristics are shown in Figure 30. From the figure, the square root of the electric field strength [V / cm] is 600 [V / cm m] 1 / 2 The electron mobility values ​​at this time are shown in Table 2. In FIG. 30, the squares are cgDBCz The results of PA are shown in the triangles, and the results of 2mDBTBPDBq-II are shown in the diamonds. The results of the deposition are shown.

[0531] [Table 2]

[0532] In this way, it is possible to calculate the electron mobility. , Takayuki Okachi et al. ”Japanese Journal of Applied Physics” Vol. 47, No. 12, 2008, See pp. 8965-8972. [Explanation of symbols]

[0533] C1 capacity C2 capacity G1 Wiring G2 Wiring L1 Shortest distance L2 Shortest distance L3 Thickness L4 sum M1 Transistor M2 Transistor M3 Transistor M4 Transistor M5 Transistor M6 Transistor M7 Transistor OUT1 wiring OUT2 wiring PIX1 pixel circuit PIX2 pixel circuit V0 Wiring V1 wiring V2 wiring V3 wiring V4 wiring V5 Wiring 10 Display device 10A display device 10B Display device 10C display device 10D display device 10E display device 10F display device 10G display device 10H display device 10J display device 10K display device 10L display device 10M display device 10N display device 10P display device 10Q display device 21 Illumination 21B light 21G light 21R light 22 light 23 light 23a Stray light 23b Stray light 23c stray light 23d stray light 24 Reflected light 41 Transistor 42 Transistor 42B Transistor 42G transistor 42R Transistor 50A display device 50B display device 51 Substrate 52 fingers 53 Layer having a light receiving device 55 Layer with transistors 57 Layer with light-emitting device 59 Substrate 100A display device 100B display device 100C display device 101 Anode 102 Cathode 103 EL layer 103a EL layer 103b EL layer 104 Charge generating layer 110 Light receiving device 112 Common layer 113 Light-emitting layer 114 Common layer 115 Common electrode 116 Protective layer 116a Inorganic insulating layer 116b Organic insulating layer 116c Inorganic insulating layer 121 Hole injection layer 122 Hole transport layer 122a Hole transport layer 122b Hole transport layer 123 Light-emitting layer 123-1 Light-emitting area 124 Electron transport layer 124-1 area 124a Electron transport layer 124b Electron transport layer 125 Electron injection layer 142 Adhesive layer 143 Space 146 Lens Array 149 Lens 151 Substrate 152 Substrate 153 Substrate 154 Substrate 155 Adhesive layer 156 Adhesive layer 157 Insulating Layer 158 Light blocking layer 159 Resin layer 159p aperture 160 void 162 Display section 164 circuits 165 Wiring 166 Conductive Layer 167 Conductive Layer 168 Conductive Layer 169B Conductive layer 169G conductive layer 169R Conductive layer 172 FPC 173 IC 181 Pixel electrode 182 Buffer Layer 183 Active layer 184 Buffer Layer 190 Light Emitting Devices 190B Light Emitting Device 190G Light Emitting Device 190R Light Emitting Device 191 Pixel electrode 191B Pixel electrode 191G Pixel electrode 191R Pixel electrode 192 Buffer Layer 193 Light-emitting layer 193B Light-emitting layer 193G Light-emitting layer 193R Light-emitting layer 194 Buffer Layer 197 Optical adjustment layer 197B Optical adjustment layer 197G optical adjustment layer 201 Transistor 202 Transistor 203 Transistor 204 Connection 205 Transistor 206 Transistor 207 Transistor 208 Transistor 209 Transistor 210 Transistor 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 214a Insulating layer 214b Insulating layer 215 Insulating Layer 216 Bulkhead 217 Bulkhead 219a Light blocking layer 219b Spacer 219c side wall 220 Gap 221 Conductive Layer 222a conductive layer 222b Conductive layer 223 Conductive Layer 225 Insulating Layer 228 areas 230 areas 231 Semiconductor Layer 231i Channel formation region 231n Low resistance region 242 Connection Layer 901 Electrode 902 Electrode 910 First Layer 911 Second Layer 912 Third Layer 6500 Electronic equipment 6501 Case 6502 Display section 6503 Power button 6504 Button 6505 Speaker 6506 Microphone 6507 Camera 6508 Light source 6510 Protective materials 6511 Display Panel 6512 Optical components 6513 Touch Sensor Panel 6515 FPC 6516 IC 6517 Printed Circuit Board 6518 Battery 7000 Display 7100 Television equipment 7101 Case 7103 Stand 7111 Remote control device 7200 Notebook Personal Computer 7211 Case 7212 Keyboard 7213 Pointing Device 7214 External connection port 7300 Digital Signage 7301 Case 7303 Speaker 7311 Information terminal 7400 Digital Signage 7401 Pillar 7411 Information terminal 9000 Chassis 9001 Display section 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Icon 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hinge 9101 Portable information terminal 9102 Portable information terminal 9200 Mobile Information Terminal 9201 Mobile information terminals

Claims

1. A light receiving device and a light emitting device are included, the light receiving device includes a first pixel electrode, an active layer, and a common electrode; the light-emitting device comprises a second pixel electrode, a hole injection layer, a light-emitting layer, an electron transport layer, and the common electrode; the active layer is located on the first pixel electrode; the active layer comprises a first organic compound; the light-emitting layer is located on the second pixel electrode; the light-emitting layer has a second organic compound different from the first organic compound; the common electrode has a portion overlapping the first pixel electrode via the active layer and a portion overlapping the second pixel electrode via the light emitting layer, the hole injection layer is in contact with one of the second pixel electrode and the common electrode which functions as an anode; the hole injection layer comprises a first compound and a second compound; The electron transport layer comprises an electron transport material, the first compound has an electron accepting property for the second compound, the HOMO level of the second compound is −5.7 eV or more and −5.4 eV or less; The electron transporting material has a HOMO level of −6.0 eV or more and an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. －７ cm ２ / Vs or more 5×10 －５ cm ２ / Vs or less, The electron mobility of the electron transporting material when the square root of the electric field strength [V / cm] is 600 is smaller than the electron mobility of the second organic compound when the square root of the electric field strength [V / cm] is 600.

2. A light receiving device and a light emitting device are included, the light receiving device includes a first pixel electrode, an active layer, and a common electrode; the light-emitting device comprises a second pixel electrode, a hole injection layer, a light-emitting layer, an electron transport layer, and the common electrode; the active layer is located on the first pixel electrode; the active layer comprises a first organic compound; the light-emitting layer is located on the second pixel electrode; the light-emitting layer has a second organic compound different from the first organic compound; the common electrode has a portion overlapping the first pixel electrode via the active layer and a portion overlapping the second pixel electrode via the light emitting layer, the hole injection layer is in contact with one of the second pixel electrode and the common electrode which functions as an anode; the hole injection layer comprises a first compound and a second compound; The electron transport layer comprises an electron transport material, the first compound has an electron accepting property for the second compound, the HOMO level of the second compound is −5.7 eV or more and −5.4 eV or less; The electron transporting material has a HOMO level of −6.0 eV or more and an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. －７ cm ２ / Vs or more 5×10 －５ cm ２ / Vs or less, The display device, wherein the electron transporting material has an anthracene skeleton.

3. A light receiving device and a light emitting device are included, the light receiving device includes a first pixel electrode, an active layer, and a common electrode; the light-emitting device comprises a second pixel electrode, a hole injection layer, a light-emitting layer, an electron transport layer, and the common electrode; the active layer is located on the first pixel electrode; the active layer comprises a first organic compound; the light-emitting layer is located on the second pixel electrode; the light-emitting layer has a second organic compound different from the first organic compound; the common electrode has a portion overlapping the first pixel electrode via the active layer and a portion overlapping the second pixel electrode via the light emitting layer, the hole injection layer is in contact with one of the second pixel electrode and the common electrode which functions as an anode; the hole injection layer comprises a first compound and a second compound; The electron transport layer comprises an electron transport material, the first compound has an electron accepting property for the second compound, the HOMO level of the second compound is −5.7 eV or more and −5.4 eV or less; The electron transporting material has a HOMO level of −6.0 eV or more and an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. －７ cm ２ / Vs or more 5×10 －５ cm ２ / Vs or less, The display device, wherein the electron transporting material has an anthracene skeleton and a heterocyclic skeleton.

4. A light receiving device and a light emitting device are included, the light receiving device includes a first pixel electrode, an active layer, and a common electrode; the light-emitting device comprises a second pixel electrode, a hole injection layer, a light-emitting layer, an electron transport layer, and the common electrode; the active layer is located on the first pixel electrode; the active layer comprises a first organic compound; the light-emitting layer is located on the second pixel electrode; the light-emitting layer has a second organic compound different from the first organic compound; the common electrode has a portion overlapping the first pixel electrode via the active layer and a portion overlapping the second pixel electrode via the light emitting layer, the hole injection layer is in contact with one of the second pixel electrode and the common electrode which functions as an anode; the hole injection layer comprises a first compound and a second compound; The electron transport layer comprises an electron transport material, the first compound has an electron accepting property for the second compound, the HOMO level of the second compound is −5.7 eV or more and −5.4 eV or less; The electron transporting material has a HOMO level of −6.0 eV or more and an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. －７ cm ２ / Vs or more 5×10 －５ cm ２ / Vs or less, The electron transporting material has an anthracene skeleton and a nitrogen-containing five-membered ring skeleton.

5. A light receiving device and a light emitting device are included, the light receiving device includes a first pixel electrode, an active layer, and a common electrode; the light-emitting device comprises a second pixel electrode, a hole injection layer, a light-emitting layer, an electron transport layer, and the common electrode; the active layer is located on the first pixel electrode; the active layer comprises a first organic compound; the light-emitting layer is located on the second pixel electrode; the light-emitting layer has a second organic compound different from the first organic compound; the common electrode has a portion overlapping the first pixel electrode via the active layer and a portion overlapping the second pixel electrode via the light emitting layer, the hole injection layer is in contact with one of the second pixel electrode and the common electrode which functions as an anode; the hole injection layer comprises a first compound and a second compound; The electron transport layer comprises an electron transport material, the first compound has an electron accepting property for the second compound, the HOMO level of the second compound is −5.7 eV or more and −5.4 eV or less; The electron transporting material has a HOMO level of −6.0 eV or more and an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. －７ cm ２ / Vs or more 5×10 －５ cm ２ / Vs or less, the electron transporting material has an anthracene skeleton and a nitrogen-containing five-membered ring skeleton, The display device, wherein the nitrogen-containing five-membered ring skeleton is any one of a pyrazole ring, an imidazole ring, an oxazole ring, and a thiazole ring.

6. In any one of claims 1 to 5, The light receiving device further comprises the hole injection layer, the hole injection layer is located on the first pixel electrode and on the second pixel electrode; The hole injection layer has a portion overlapping with the active layer and a portion overlapping with the light emitting layer.

7. In any one of claims 1 to 6, The display device, wherein the light emitting device exhibits blue light.

8. In any one of claims 1 to 7, The display device, wherein the light emitting device is a fluorescent light emitting device.

9. In any one of claims 1 to 8, A flexible display device.

10. A display module comprising the display device according to any one of claims 1 to 9 and a connector or an integrated circuit.

11. A display module according to claim 10; An electronic device having at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

Images