Substrate processor and method for processing substrate

Abstract

To provide a technique of suppressing generation of splatting of liquid when cleaning processing is performed by using a liquid mixture.SOLUTION: A substrate processor includes: a rotary holding unit for holding a substrate to be rotatable; a cleaning nozzle for discharging a liquid mixture of a cleaning liquid and a gas on the substrate; a liquid supply nozzle provided to be movable above the substrate integrally with the cleaning nozzle; and a control unit for controlling each part. The cleaning nozzle can discharge the cleaning liquid and the gas separately. The control unit performs: first processing of forming a liquid film on the substrate; second processing of discharging the cleaning liquid from the cleaning nozzle to a center part of the substrate on which the liquid film is formed; third processing of discharging the liquid mixture to the center part of the substrate by discharging a first flow rate of the gas from the cleaning nozzle to the substrate; and fourth processing of changing the flow rate of the gas from the first flow rate to a second flow rate larger than the first flow rate and moving the cleaning nozzle on which the liquid mixture is discharged and the liquid supply nozzle on which the liquid is discharged from above the center part of the substrate to above a peripheral part.SELECTED DRAWING: Figure 20

Description

[Technical field]

[0001] The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] In the manufacturing process of semiconductor devices, a technique is known in which a mixed fluid of a cleaning liquid and a gas is discharged onto a substrate such as a semiconductor wafer to remove a target object such as a resist film from the substrate and clean the substrate (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2003-203892 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can suppress the occurrence of liquid splashes on a substrate during a cleaning process using a mixed fluid. [Means for solving the problem]

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a spin holder, a cleaning nozzle, a liquid supply nozzle, and a controller. The spin holder rotatably holds a substrate. The cleaning nozzle is provided above the substrate held and rotated by the spin holder so as to be movable from the center to the periphery of the substrate, and ejects a mixed fluid of a cleaning liquid and a gas onto the substrate. The liquid supply nozzle is provided above the substrate so as to be movable integrally with the cleaning nozzle, and ejects a liquid onto the substrate. The controller controls each part. The cleaning nozzle is capable of ejecting the cleaning liquid and the gas independently. The controller executes a first process, a second process, a third process, and a fourth process. The first process ejects the liquid from the liquid supply nozzle onto the center of the substrate to form a liquid film on the substrate. The second process ejects the cleaning liquid from the cleaning nozzle onto the substrate on which the liquid film has been formed. A third process discharges the mixed fluid onto a central portion of the substrate by discharging the gas from the cleaning nozzle at a first flow rate onto the substrate. A fourth process changes the flow rate of the gas discharged from the cleaning nozzle to a second flow rate greater than the first flow rate, and moves the cleaning nozzle from which the mixed fluid is discharged and the liquid supply nozzle from which the liquid is discharged from above the central portion of the substrate to above the peripheral portion. Effect of the Invention

[0006] According to the present disclosure, it is possible to suppress the occurrence of liquid splashes on a substrate during a cleaning process using a mixed fluid. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram showing an example of a specific configuration of a substrate processing apparatus according to an embodiment. [Diagram 2] FIG. 2 is a view for explaining the cleaning process according to the embodiment. [Diagram 3] FIG. 3 is a diagram for explaining the cleaning process according to the embodiment. [Figure 4] FIG. 4 is a diagram for explaining the cleaning process according to the embodiment. [Diagram 5] FIG. 5 is a diagram for explaining the cleaning process according to the embodiment. [Figure 6] FIG. 6 is a diagram for explaining the cleaning process according to the embodiment. [Figure 7] FIG. 7 is a view for explaining the cleaning process according to the embodiment. [Figure 8] FIG. 8 is a diagram for explaining the cleaning process according to the embodiment. [Figure 9] FIG. 9 is a view for explaining the cleaning process according to the embodiment. [Figure 10] FIG. 10 is a diagram for explaining the cleaning process according to the embodiment. [Figure 11] FIG. 11 is a diagram for explaining the cleaning process according to the embodiment. [Figure 12] FIG. 12 is a diagram showing an example of the transition of the flow rate of the process gas discharged from the cleaning nozzle in the cleaning process in the reference example. [Figure 13] FIG. 13 is a diagram showing an example of a transition of the flow rate of the process gas discharged from the cleaning nozzle in the cleaning process according to the embodiment. [Figure 14] FIG. 14 is a diagram for explaining the rinsing process according to the embodiment. [Figure 15] FIG. 15 is a diagram for explaining the rinsing process according to the embodiment. [Figure 16] FIG. 16 is a diagram for explaining the rinsing process according to the embodiment. [Figure 17] FIG. 17 is a view for explaining the rinsing process according to the embodiment. [Figure 18] FIG. 18 is a diagram for explaining the rinsing process according to the embodiment. [Figure 19] FIG. 19 is a flowchart showing an example of a procedure of substrate processing performed by the substrate processing apparatus according to this embodiment. [Figure 20] FIG. 20 is a flowchart showing an example of a procedure of a cleaning process performed by the substrate processing apparatus according to the embodiment. [Figure 21]FIG. 21 is a flowchart showing an example of a procedure of a rinsing process performed by the substrate processing apparatus according to this embodiment. [Figure 22] FIG. 22 is a flowchart showing another example of the procedure of the cleaning process performed by the substrate processing apparatus according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, with reference to the attached drawings, an embodiment of the substrate processing apparatus and substrate processing method disclosed in the present application will be described in detail. Note that the present disclosure is not limited to the following embodiment. It should be noted that the drawings are schematic, and the dimensional relationship of each element, the ratio of each element, and the like may differ from reality. Furthermore, there may be parts in which the dimensional relationship and ratio differ between the drawings.

[0009] 2. Description of the Related Art In a semiconductor device manufacturing process, a technique is known in which a mixed fluid of a cleaning liquid and a gas is discharged onto a substrate such as a semiconductor wafer to remove a target material, such as a resist film, from the substrate and clean the substrate.

[0010] In this cleaning process, for example, liquid is supplied from a liquid supply nozzle arranged adjacent to a two-fluid nozzle that ejects the mixed fluid, and cleaning process using the mixed fluid is performed while a liquid film is being formed on the front surface of the substrate.

[0011] However, in the above conventional technology, when a mixed fluid is discharged from a two-fluid nozzle onto a liquid film on a substrate, a large amount of liquid splashing may occur on the substrate, which may contaminate each nozzle and generate a large amount of particles on the substrate.

[0012] Therefore, there is a need to develop a technology that overcomes the above-mentioned problems and can suppress the occurrence of liquid splashes on a substrate during cleaning processing with a mixed fluid.

[0013] <Configuration of the substrate processing apparatus> First, the configuration of a substrate processing apparatus 1 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic diagram showing an example of a specific configuration of the substrate processing apparatus 1, and is a schematic cross-sectional view of the substrate processing apparatus 1 as viewed from the side.

[0014] As shown in FIG. 1, the substrate processing apparatus 1 includes a processing chamber 20, a spin holder 30, an upper supply unit 40, a lower supply unit 50, a cup body 60, and a mist guard .

[0015] The substrate processing apparatus 1 also includes a control device 2. The control device 2 is, for example, a computer, and includes a control unit 3 and a storage unit 4. The storage unit 4 stores programs for controlling various processes executed in the substrate processing apparatus 1. The control unit 3 controls the operation of the substrate processing apparatus 1 by reading out and executing the programs stored in the storage unit 4.

[0016] Such a program may be recorded in a computer-readable storage medium and installed from that storage medium into the storage unit 4 of the control device 2. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

[0017] The processing chamber 20 is configured so that a processing fluid is used to process the wafer W therein. The processing chamber 20 accommodates a rotation holder 30, an upper supply unit 40, a lower supply unit 50, a cup body 60, and a mist guard 70.

[0018] 1, the FFU (Fan Filter Unit) 21 is attached so as to cover an opening 20a formed in a ceiling wall of the processing chamber 20. The FFU 21 forms a downflow in the processing chamber 20.

[0019] A loading / unloading port (not shown) is formed in the substrate processing apparatus 1. The wafer W is transferred into the processing chamber 20 through the loading / unloading port by a substrate transfer device (not shown), and is also transferred from the processing chamber 20 to the outside through the loading / unloading port. A shutter (not shown) is provided at the loading / unloading port at a position that blocks the loading / unloading port, and is configured to be able to open and close the loading / unloading port.

[0020] 1, the rotating holder 30 includes a rotating shaft 31, a driving unit 32, a substrate holder 33, and a plurality of support pins 34. The rotating shaft 31 is a hollow tubular member extending along the vertical direction. The rotating shaft 31 is configured to be rotatable around a central axis Ax.

[0021] The drive unit 32 is connected to the rotating shaft 31. The drive unit 32 operates based on a signal from the control unit 3 to rotate the rotating shaft 31. The drive unit 32 may be a power source such as an electric motor.

[0022] The substrate holding part 33 holds the wafer W horizontally. The substrate holding part 33 is, for example, a flat plate having an annular shape and extends horizontally. That is, a through hole 33a is formed in the center of the substrate holding part 33. The inner periphery of the substrate holding part 33 is connected to the tip of the rotating shaft 31. Therefore, the substrate holding part 33 rotates around the central axis Ax of the rotating shaft 31 in conjunction with the rotation of the rotating shaft 31.

[0023] The multiple support pins 34 are provided to protrude upward from the upper surface 33b of the substrate holding portion 33. The multiple support pins 34 support the wafer W approximately horizontally by contacting the rear surface of the wafer W with their tips. The support pins 34 may have, for example, a cylindrical shape or a frustum shape.

[0024] The multiple support pins 34 may be arranged at approximately equal intervals so as to form a circle as a whole when viewed from above in the vicinity of the outer periphery of the substrate holding portion 33. For example, when there are 12 multiple support pins 34, the multiple support pins 34 may be arranged at intervals of approximately 30°.

[0025] The upper supply unit 40 supplies a processing fluid to the front surface of the wafer W from above the wafer W. The upper supply unit 40 includes supply units 41a to 41e, a nozzle 42a, a liquid supply nozzle 42b, a cleaning nozzle 42c, arms 43a and 43b, and drive units 44a and 44b.

[0026] The supply unit 41a includes a liquid source, a valve, a pump, a heater, etc. (not shown), and supplies various processing liquids downward from a nozzle 42a based on a signal from the control unit 3. The processing liquid supplied from the supply unit 41a is, for example, SPM (a mixture of sulfuric acid, hydrogen peroxide, and water), etc., and has a temperature higher than room temperature (for example, about 120° C.).

[0027] The supply unit 41b includes a liquid source, a valve, a pump, a heater, and the like (not shown), and supplies a cleaning treatment liquid downward from a liquid supply nozzle 42b based on a signal from the control unit 3.

[0028] The cleaning treatment liquid supplied from the supply unit 41b is an example of a liquid, such as SC1 (a mixture of ammonia, hydrogen peroxide, and water). The cleaning treatment liquid supplied from the supply unit 41b has a temperature higher than room temperature (for example, 40° C. to 70° C.).

[0029] The supply unit 41c includes a liquid source, a valve, a pump, etc. (not shown), and supplies the rinse liquid downward from the liquid supply nozzle 42b based on a signal from the control unit 3. The rinse liquid supplied from the supply unit 41c is, for example, DIW (deionized water), etc. The rinse liquid supplied from the supply unit 41c is, for example, at room temperature.

[0030] The supply unit 41d includes a liquid source, a valve, a pump, a heater, and the like (not shown), and supplies a cleaning processing liquid downward from the cleaning nozzle 42c based on a signal from the control unit 3.

[0031] The cleaning treatment liquid supplied from the supply unit 41d is an example of a cleaning liquid, such as SC1, etc. The cleaning treatment liquid supplied from the supply unit 41d has a temperature higher than room temperature (for example, 40° C. to 70° C.).

[0032] The supply unit 41e includes a gas source, a valve, a pump, and the like (not shown), and supplies various process gases downward from the cleaning nozzle 42c based on a signal from the control unit 3. The process gas supplied from the supply unit 41e is an example of a gas, and is, for example, an inert gas such as nitrogen gas.

[0033] Nozzle 42a is, for example, a bar nozzle, and is attached to arm 43a. Arm 43a is located in the space above rotation holding unit 30. Drive unit 44a raises and lowers arm 43a in the vertical direction and rotates arm 43a horizontally above rotation holding unit 30 based on a signal from control unit 3.

[0034] The liquid supply nozzle 42b and the cleaning nozzle 42c are attached to an arm 43b and configured to be movable together with each other, and are positioned at a given distance (for example, 40 mm) from each other.

[0035] Thus, in the embodiment, the liquid supply nozzle 42b and the cleaning nozzle 42c are attached to the same arm 43b and configured to be movable integrally with each other, so that only one drive system is required, thereby reducing the cost of the substrate processing apparatus 1.

[0036] The cleaning nozzle 42c is, for example, a two-fluid nozzle that mixes SC1 supplied from the supply unit 41d with a processing gas supplied from the supply unit 41e, and ejects this mixed processing fluid (hereinafter also referred to as mixed fluid M (see FIG. 7)) onto the front surface of the wafer W.

[0037] 1, the arm 43b is located in the space above the rotational holding unit 30. The driving unit 44b raises and lowers the arm 43b in the vertical direction and rotates the arm 43b horizontally above the rotational holding unit 30 based on a signal from the control unit 3.

[0038] The lower supply unit 50 supplies a processing fluid to the lower surface of the wafer W from below the wafer W. The lower supply unit 50 includes supply units 51a, 51b, and 52, and a rear surface nozzle 53.

[0039] The supply unit 51a includes a liquid source, a valve, a pump, a heater, etc. (not shown), and supplies various cleaning processing liquids upward from the first flow path 53a of the back surface nozzle 53 based on a signal from the control unit 3.

[0040] The cleaning treatment liquid supplied from the supply unit 51a is an example of another liquid, such as SC1, etc. The cleaning treatment liquid supplied from the supply unit 51a has a temperature higher than room temperature (for example, 40° C. to 70° C.).

[0041] The supply unit 51b includes a liquid source, a valve, a pump, a heater, and the like (not shown), and supplies various rinsing liquids upward from the first flow path 53a of the rear surface nozzle 53 based on a signal from the control unit 3.

[0042] The rinse liquid supplied from the supply unit 51b is, for example, DIW, etc. The rinse liquid supplied from the supply unit 51b has a temperature of, for example, room temperature or a temperature higher than room temperature (for example, 40° C. to 70° C.).

[0043] The supply unit 52 includes a gas source, a valve, a pump, and the like (not shown), and supplies various process gases upward from the second flow path 53b of the back surface nozzle 53 based on a signal from the control unit 3. The process gas supplied from the supply unit 52 is, for example, an inert gas such as nitrogen gas.

[0044] The cup body 60 is disposed so as to surround the substrate holding part 33 from the outside, and collects the processing fluid scattered from the wafer W held by the substrate holding part 33. The cup body 60 has, for example, an inner cup 61, a drainage cup 62, and an exhaust cup 63.

[0045] The inner cup 61 has, for example, a circular ring shape and is disposed so as to surround from the outside the wafer W supported by the multiple support pins 34. The inner cup 61 is supported, for example, on the upper surface 33b of the substrate holding part 33. Therefore, the inner cup 61 rotates around the central axis Ax of the rotation shaft 31 in conjunction with the rotation of the rotation shaft 31.

[0046] In addition, since a gap exists between the inner cup 61 and the substrate holding part 33, the processing fluid supplied to the wafer W passes through this gap and flows out to the outside of the inner cup 61 and the substrate holding part 33. Note that the inner cup 61 is not limited to being configured to be rotatable together with the substrate holding part 33, and may be fixed to the processing chamber 20.

[0047] The drainage cup 62 is positioned so as to surround the inner cup 61 from the outside. The drainage cup 62 forms a cylindrical space communicating with the gap between the inner cup 61 and the substrate holding part 33, and collects the processing liquid that flows out from the gap. A pipe is connected to the lower end of the drainage cup 62 for draining the collected processing liquid to a drainage part DR located outside the substrate processing apparatus 1.

[0048] The exhaust cup 63 is positioned so as to surround the drainage cup 62 from the outside. A cylindrical space is formed between the exhaust cup 63 and the drainage cup 62, and this space is adjusted to a negative pressure. A pipe is connected to the lower end of the exhaust cup 63 for sucking in the atmosphere near the inner cup 61 and discharging it to an exhaust section EXH located outside the substrate processing apparatus 1.

[0049] The mist guard 70 is positioned so as to surround the cup body 60 from the outside. That is, the substrate holding portion 33 and the cup body 60 are positioned inside the mist guard 70. The mist guard 70 has, for example, a cylindrical portion 71 and a protruding portion 72.

[0050] The tubular portion 71 is, for example, cylindrical and extends in the vertical direction. The protruding portion 72 is, for example, annular and extends horizontally from the upper end of the tubular portion 71 radially inward (i.e., toward the cup body 60).

[0051] The mist guard 70 is configured to be movable up and down by, for example, a lifting mechanism (not shown). The control unit 3 can prevent the mist of the processing liquid scattered from the rotating wafer W from reaching the inner wall of the processing chamber 20 by disposing the mist guard 70 at a high position.

[0052] <Details of cleaning and rinsing process> Next, details of the cleaning process and rinsing process in the substrate processing apparatus 1 according to the embodiment will be described with reference to Figures 2 to 18. Figures 2 to 11 are views for explaining the cleaning process according to the embodiment.

[0053] Prior to the cleaning process and rinsing process described below, in the substrate processing apparatus 1, the control unit 3 (see FIG. 1) executes, for example, a holding process, a substrate process, and a rinsing process.

[0054] In the holding process, the control unit 3 holds the wafer W (see FIG. 1) transferred into the processing chamber 20 (see FIG. 1) through the load / unload port by the substrate transfer device, in the spin holding unit 30 (see FIG. 1). In the substrate processing, the control unit 3 discharges high-temperature SPM from nozzle 42a (see FIG. 1), which is a bar nozzle, onto the front surface of the wafer W, thereby liquid-treating the entire front surface of the wafer W.

[0055] In the rinsing process, the control unit 3 discharges DIW as a rinsing liquid from the liquid supply nozzle 42b (see FIG. 1) and the back surface nozzle 53 (see FIG. 1) onto the front surface and back surface of the wafer W, thereby rinsing the wafer W. For example, the state of the periphery of the wafer W after the processes up to this point is as shown in FIG. 2.

[0056] In the cleaning process of the substrate processing apparatus 1 according to the embodiment, first, the control unit 3 (see FIG. 1) operates the upper supply unit 40 to move the liquid supply nozzle 42b to a given position as shown in FIG. 2. Specifically, the control unit 3 moves the liquid supply nozzle 42b above the central portion of the wafer W that is a given distance D1 (e.g., 15 mm) away from the center Wa of the wafer W. The center Wa of the wafer W is an example of the central portion of the wafer W.

[0057] In the state shown in FIG. 2, the control unit 3 rotates the wafer W held by the rotation holding unit 30 (see FIG. 1) at a given rotation speed R1 (for example, 500 rpm).

[0058] At this time, no processing liquid or processing gas is discharged from the liquid supply nozzle 42b, the cleaning nozzle 42c, and the back surface nozzle 53. Meanwhile, in this disclosure, although not shown in the subsequent drawings, the control unit 3 may continuously discharge a processing gas (such as nitrogen gas) at a low flow rate (such as 2 L / min) from the second flow path 53b of the back surface nozzle 53.

[0059] This makes it possible to prevent various processing liquids discharged onto the rear surface of the wafer W from flowing back into the second flow passage 53b in the subsequent cleaning process and rinsing process. Therefore, according to the embodiment, in the drying process after the rinsing process, when a drying process gas is discharged from the second flow passage 53b of the rear surface nozzle 53, contamination of the wafer W by the processing liquid that flows back can be prevented.

[0060] Next, the control unit 3 (see FIG. 1) changes the rotational speed of the wafer W from the rotational speed R1 to a given rotational speed R2 (for example, 1500 rpm) (increases the rotational speed) as shown in FIG.

[0061] Furthermore, the control unit 3 discharges SC1 from the liquid supply nozzle 42b at a given flow rate F1 (e.g., 1500 mL / min) and at a temperature higher than room temperature (e.g., 40° C. to 70° C.) onto the front surface of the wafer W. As a result, the control unit 3 forms a liquid film of SC1 on the front surface of the wafer W.

[0062] Furthermore, the control unit 3 discharges SC1 at a given flow rate (e.g., 1000 mL / min) and at a temperature higher than room temperature (e.g., 40° C. to 70° C.) from the first flow path 53a of the back surface nozzle 53 onto the back surface of the wafer W. The SC1 discharged onto the back surface spreads over the entire back surface of the wafer W.

[0063] In this manner, in the embodiment, the temperature of the wafer W can be maintained higher than room temperature by discharging SC1 having a temperature higher than room temperature from the rear surface nozzle 53 onto the rear surface of the wafer W. Therefore, according to the embodiment, the subsequent cleaning process can be efficiently performed at a high temperature.

[0064] 3, the rotation speed of the wafer W is changed to a high rotation speed R2, so that the SC1 having a temperature higher than room temperature can be quickly spread over the front and back surfaces of the wafer W. Therefore, according to the embodiment, the temperature of the wafer W can be quickly increased, so that the wafer W can be quickly moved to the subsequent processing.

[0065] Also, in the embodiment, in the process of Figure 3, by ejecting high-temperature SC1 from the liquid supply nozzle 42b to a position a given distance D1 (see Figure 2) away from the center Wa, the temperature of the central part of the wafer W can be made more uniform compared to the case where high-temperature SC1 is ejected onto the center Wa itself.

[0066] In other words, when high-temperature SC1 is ejected onto the center Wa itself, the temperature distribution of the wafer W becomes single-peaked, whereas by ejecting high-temperature SC1 onto a position a given distance D1 away from the center Wa, the temperature distribution of the wafer W can be made double-peaked.

[0067] Next, the control unit 3 (see FIG. 1) changes the rotation speed of the wafer W from the rotation speed R2 to a given rotation speed R3 (e.g., 200 rpm) (reduces the rotation speed) while maintaining the ejection of SC1 from the liquid supply nozzle 42b and the back surface nozzle 53, as shown in FIG. 4.

[0068] Next, as shown in FIG. 5, the control unit 3 (see FIG. 1) changes the amount of SC1 discharged from the liquid supply nozzle 42b from the flow rate F1 to a given flow rate F2 (e.g., 450 mL / min) while maintaining the discharge of SC1 from the rear surface nozzle 53 (reducing the flow rate).

[0069] Furthermore, the control unit 3 operates the upper supply unit 40 to move the liquid supply nozzle 42b and the cleaning nozzle 42c to given positions. Specifically, the control unit 3 moves the liquid supply nozzle 42b above the center of the wafer W that is a given distance D2 (e.g., 20 mm) away from the center Wa of the wafer W.

[0070] In this way, the control unit 3 makes the distance from the liquid supply nozzle 42b to the center Wa of the wafer W and the distance from the cleaning nozzle 42c to the center Wa of the wafer W approximately equal.

[0071] 6, the control unit 3 (see FIG. 1) causes the cleaning nozzle 42c to discharge SC1 at a given flow rate F11 (e.g., 100 mL / min) onto the front surface of the wafer W while maintaining the discharge of SC1 from the liquid supply nozzle 42b and the back surface nozzle 53. Note that the SC1 discharged from the cleaning nozzle 42c has a temperature higher than room temperature (e.g., 40° C. to 70° C.).

[0072] Here, in the embodiment, in the process of Figure 5 described above, the distance from the liquid supply nozzle 42b to the center Wa and the distance from the cleaning nozzle 42c to the center Wa are made approximately equal, thereby suppressing liquid splashing on the wafer W when SC1 is ejected from the cleaning nozzle 42c.

[0073] This is because the momentum of SC1 discharged to a position shifted from the center Wa and spreading over the front surface of the wafer W directly below the cleaning nozzle 42c is reduced compared to when SC1 is discharged to the center Wa of the wafer W.

[0074] 7, the control unit 3 (see FIG. 1) discharges the process gas at a given flow rate F21 (e.g., 20 L / min) from the cleaning nozzle 42c onto the front surface of the wafer W while maintaining the discharge of SC1 from the liquid supply nozzle 42b, the back surface nozzle 53, and the cleaning nozzle 42c. The flow rate F21 is an example of a first flow rate.

[0075] As a result, a mixed fluid M of SC1 and the processing gas is discharged onto the front surface of the wafer W from the cleaning nozzle 42c.

[0076] Next, the control unit 3 (see Figure 1) operates the upper supply unit 40 while maintaining the ejection of SC1 and mixed fluid M from the liquid supply nozzle 42b, the back surface nozzle 53, and the cleaning nozzle 42c, as shown in Figure 8, to move the cleaning nozzle 42c above the center Wa of the wafer W.

[0077] Next, the control unit 3 (see FIG. 1) changes the discharge amount of the processing gas from the cleaning nozzle 42c from the flow rate F21 to a given flow rate F22 (e.g., 60 L / min) (increases the flow rate) while maintaining the discharge of the mixed fluid M from the cleaning nozzle 42c as shown in FIG. 9. The flow rate F22 is an example of the second flow rate.

[0078] Then, at the same time as increasing the amount of processing gas discharged, the control unit 3 operates the upper supply unit 40, as shown in FIG. 9, to move the cleaning nozzle 42c from above the center Wa of the wafer W toward the peripheral edge of the wafer W, and performs a cleaning process on the front surface of the wafer W using the mixed fluid M.

[0079] Furthermore, after the cleaning nozzle 42c reaches above the peripheral edge of the wafer W, as shown in FIG. 10, the control unit 3 (see FIG. 1) moves the cleaning nozzle 42c to above the central portion (center Wa) of the wafer W, as shown in FIG. 11, and repeats the cleaning process of the wafer W with the mixed fluid M.

[0080] Here, in the embodiment, when performing a cleaning process of the wafer W with the mixed fluid M, it is preferable to first start discharging the process gas at a low flow rate F21, then increase the flow rate to F22 for the cleaning process, and then start the cleaning process of the wafer W. The reason for this will be described with reference to FIGS. 12 and 13.

[0081] 12 is a diagram showing an example of the transition of the flow rate of the process gas discharged from the cleaning nozzle 42c during the cleaning process in the reference example. In this reference example, at time T1, the control unit 3 (see FIG. 1) instructs the supply unit 41e (see FIG. 1) to start discharging the process gas at a high flow rate F22 during the cleaning process.

[0082] In the reference example, the gas flow rate increases suddenly because the process gas is suddenly started at a high flow rate F22 from zero, and the gas flow rate overshoots to a flow rate Fa that is significantly higher than the flow rate F22 at time T2. After that, the valve of the supply unit 41e and the like function to return this overshoot, and the process gas is discharged at the specified flow rate F22 from time T3.

[0083] In the reference example, since the gas flow rate largely overshoots in this way, the overshooting process gas may be discharged onto the liquid film on the wafer W, causing a large amount of liquid splashing on the wafer W. The large amount of liquid splashing on the wafer may contaminate each nozzle, causing a large amount of particles to be generated on the wafer W.

[0084] 13 is a diagram showing an example of a transition of the flow rate of the process gas discharged from the cleaning nozzle 42c in the cleaning process according to the embodiment. As shown in FIG. 13, in the embodiment, at time T11, the control unit 3 (see FIG. 1) instructs the supply unit 41e (see FIG. 1) to start discharging the process gas at a flow rate F21 lower than that during the cleaning process. As a result, the process gas is discharged at the designated flow rate F21 from time T12.

[0085] Then, at time T13, the control unit 3 instructs the supply unit 41e to start discharging the processing gas at the high flow rate F22 for the cleaning process. In this case, since the processing gas is already discharged from the cleaning nozzle 42 at the flow rate F21, the overshoot that occurs before the designated flow rate F22 is reached at time T15 is smaller than the overshoot in the reference example.

[0086] In other words, in the cleaning process according to the embodiment, the flow rate Fb, which is the maximum flow rate of the process gas until it reaches the flow rate F22 during the cleaning process, is smaller than the flow rate Fa, which is the maximum flow rate of the process gas in the reference example (see FIG. 12).

[0087] Therefore, according to the embodiment, since the cleaning process is performed using the mixed fluid M (see FIG. 9), even if the process gas is ejected from the cleaning nozzle 42c at a desired flow rate F22 onto the liquid film on the wafer W, the occurrence of liquid splashes on the wafer can be suppressed.

[0088] In the cleaning process according to the embodiment, the control unit 3 may cause the cleaning nozzle 42c to scan only once back and forth between the center (center Wa) and the peripheral edge of the wafer W, or may cause the cleaning nozzle 42c to scan back and forth multiple times between the center (center Wa) and the peripheral edge of the wafer W. In either case, when the cleaning process according to the embodiment is completed, the control unit 3 positions the cleaning nozzle 42c above the center (center Wa) of the wafer W, as shown in FIG.

[0089] After the cleaning process described above is completed, the control unit 3 continues to perform a rinsing process on the wafer W. Figures 14 to 18 are diagrams for explaining the rinsing process according to the embodiment.

[0090] In the rinsing process according to the embodiment, first, as shown in FIG. 14, the control unit 3 (see FIG. 1) changes the discharge amount of the processing gas from the cleaning nozzle 42c from the flow rate F22 to a given flow rate F23 while maintaining the discharge of the mixed fluid M from the cleaning nozzle 42c. The flow rate F23 is an example of a third flow rate. The flow rate F23 is a value smaller than the flow rate F22, for example, 20 L / min.

[0091] As a result, by continuously ejecting the mixed fluid M generated by the processing gas at a large flow rate F22 onto the center of the wafer W, damage (such as collapse) to structures such as the semiconductor device pattern formed in the center (e.g., center Wa) of the wafer W can be prevented.

[0092] Next, the control unit 3 (see FIG. 1) moves the liquid supply nozzle 42b above the center (center Wa) of the wafer W while maintaining the ejection of SC1 and mixed fluid M from the liquid supply nozzle 42b, the back surface nozzle 53, and the cleaning nozzle 42c, as shown in FIG. 15.

[0093] Next, the control unit 3 (see FIG. 1) discharges room temperature DIW from the liquid supply nozzle 42b at a given flow rate F3 (e.g., 450 mL / min) onto the front surface of the central portion (center Wa) of the wafer W, as shown in FIG. 16. In this way, the control unit 3 rinses the front surface of the wafer W with the DIW.

[0094] Furthermore, the control unit 3 discharges the DIW at room temperature at a given flow rate (for example, 1500 mL / min) from the first flow path 53a of the back surface nozzle 53 onto the back surface of the wafer W. In this way, the control unit 3 rinses the back surface of the wafer W with the DIW.

[0095] 16, when the liquid supply nozzle 42b and the back surface nozzle 53 start to discharge DIW, the cleaning nozzle 42c continues to discharge the mixed fluid M. In this case, the mixed fluid M has a discharge amount of SC1 at a flow rate F11 and a discharge amount of the processing gas at a flow rate F23.

[0096] In this manner, in the embodiment, the discharge of the mixed fluid M from the cleaning nozzle 42c may be maintained until the discharge of the rinsing liquid (DIW) from the liquid supply nozzle 42b is started. This makes it possible to continue forming a liquid film on the entire front surface of the wafer W, compared to a case in which the processing liquid discharged from the liquid supply nozzle 42b is switched from SC1 to DIW after the discharge of the mixed fluid M is stopped.

[0097] Therefore, according to the embodiment, at least a portion of the front surface of the wafer W is dried when the cleaning process is shifted to the rinsing process, so that adhesion of particles to the wafer W can be suppressed.

[0098] 17, the control unit 3 (see FIG. 1) stops the discharge of the processing gas from the cleaning nozzle 42c (i.e., the discharge flow rate of the processing gas=0) while maintaining the discharge of DIW from the liquid supply nozzle 42b and the back surface nozzle 53. As a result, the control unit 3 discharges only SC1 from the liquid supply nozzle 42b.

[0099] 18, the control unit 3 (see FIG. 1) stops the discharge of SC1 from the cleaning nozzle 42c while maintaining the discharge of DIW from the liquid supply nozzle 42b and the back surface nozzle 53. As a result, only the DIW serving as a rinsing liquid is supplied to the front surface of the wafer W.

[0100] In this manner, in the embodiment, when the control unit 3 stops the discharge of the mixed fluid M from the cleaning nozzle 42c, the control unit 3 may first stop the discharge of the processing gas and then stop the discharge of SC1. This allows the liquid film to continue to be formed on the entire front surface of the wafer W, compared to the case where the discharge of the processing gas is started after the discharge of SC1 is stopped.

[0101] Therefore, according to the embodiment, at least a portion of the front surface of the wafer W is dried when the cleaning process is shifted to the rinsing process, so that adhesion of particles to the wafer W can be suppressed.

[0102] Following the process shown in FIG. 18, the control unit 3 performs a rinse process for the wafer W by increasing the amount of DIW discharged from the liquid supply nozzle 42b, increasing the rotation speed of the wafer W, or the like (not shown).

[0103] After the rinsing process is completed, the control unit 3 controls the spin holder 30 and the like to perform a drying process by spin drying on the wafer W (not shown). During the drying process, the control unit 3 may eject a process gas at a given flow rate (for example, 2 L / min) from the second flow path 53b of the rear surface nozzle 53.

[0104] When the drying process of the wafer W is completed, a series of substrate processing operations in the substrate processing apparatus 1 is completed.

[0105] The substrate processing apparatus 1 according to the embodiment includes a spin holder 30, a cleaning nozzle 42c, a liquid supply nozzle 42b, and a controller 3. The spin holder 30 holds a substrate (wafer W) so as to be rotatable. The cleaning nozzle 42c is provided above the substrate (wafer W) held and rotated by the spin holder 30 so as to be movable from the center to the periphery of the substrate (wafer W), and discharges a mixed fluid M of a cleaning liquid (SC1) and a gas onto the substrate (wafer W). The liquid supply nozzle 42b is provided above the substrate (wafer W) so as to be movable integrally with the cleaning nozzle 42c, and discharges the liquid (SC1) onto the substrate (wafer W). The controller 3 controls each part. The cleaning nozzle 42c can discharge the cleaning liquid (SC1) and the gas independently. The controller 3 executes a first process, a second process, a third process, and a fourth process. In the first process, the liquid (SC1) is discharged from the liquid supply nozzle 42b to the center of the substrate (wafer W) to form a liquid film of the liquid (SC1) on the substrate (wafer W). In the second process, the cleaning liquid (SC1) is discharged from the cleaning nozzle 42c to the center of the substrate (wafer W) on which the liquid film of the liquid (SC1) has been formed. In the third process, the mixed fluid M is discharged to the center of the substrate (wafer W) by discharging gas at a first flow rate (flow rate F21) from the cleaning nozzle 42c onto the substrate (wafer W). In the fourth process, the flow rate of the gas discharged from the cleaning nozzle 42c is changed to a second flow rate (flow rate F22) greater than the first flow rate, and the cleaning nozzle 42c from which the mixed fluid M is discharged and the liquid supply nozzle 42b from which the liquid (SC1) is discharged are moved from above the center of the substrate (wafer W) to above the peripheral portion. This makes it possible to suppress the occurrence of liquid splashing on the wafer during the cleaning process using the mixed fluid M.

[0106] In addition, in the substrate processing apparatus 1 according to the embodiment, the control unit 3 further executes a fifth process and a sixth process. In the fifth process, after the cleaning nozzle 42c reaches above the peripheral portion of the substrate (wafer W), the cleaning nozzle 42c ejects the mixed fluid M and the liquid supply nozzle 42b ejects the liquid (SC1) from the liquid supply nozzle 42b, while moving the cleaning nozzle 42c and the liquid supply nozzle 42b from above the peripheral portion of the substrate (wafer W) to above the central portion. In the sixth process, the liquid supply nozzle 42b that has moved to above the central portion of the substrate (wafer W) ejects the rinsing liquid (DIW) onto the substrate (wafer W). As a result, at least a part of the front surface of the wafer W dries when the process is shifted from the cleaning process to the rinsing process, and thus adhesion of particles to the wafer W can be suppressed.

[0107] Moreover, in the substrate processing apparatus 1 according to the embodiment, the control unit 3 further executes a seventh process. In the seventh process, after starting the sixth process, the cleaning nozzle 42c first stops discharging the gas, and then stops discharging the cleaning liquid (SC1). This dries at least a part of the front surface of the wafer W when the cleaning process is switched to the rinsing process, thereby preventing particles from adhering to the wafer W.

[0108] In addition, in the substrate processing apparatus 1 according to the embodiment, the control unit 3 further executes a fifth process and an eighth process. In the fifth process, after the cleaning nozzle 42c reaches above the peripheral portion of the substrate (wafer W), the cleaning nozzle 42c ejects the mixed fluid M and the liquid supply nozzle 42b ejects the liquid (SC1) from the cleaning nozzle 42c, while moving the cleaning nozzle 42c and the liquid supply nozzle 42b from above the peripheral portion to above the central portion of the substrate (wafer W). In the eighth process, the flow rate of the gas ejected from the cleaning nozzle 42c that has moved to above the central portion of the substrate (wafer W) is changed to a third flow rate (flow rate F23) that is smaller than the second flow rate (flow rate F22). This makes it possible to prevent the pattern of the semiconductor device formed in the central portion of the wafer W from collapsing.

[0109] Moreover, the substrate processing apparatus 1 according to the embodiment further includes a back surface nozzle 53 that ejects another liquid (SC1) onto the back surface of the substrate (wafer W) held by the spin holder 30. Moreover, the control unit 3 further executes a ninth process. In the ninth process, when executing the fourth process, the back surface nozzle 53 ejects another liquid (SC1) having a temperature higher than room temperature onto the back surface of the substrate (wafer W). This allows the cleaning process to be efficiently performed at a high temperature.

[0110] <Substrate processing procedure> Next, a procedure of substrate processing in the substrate processing apparatus 1 according to the embodiment will be described with reference to Fig. 19 to Fig. 22. Fig. 19 is a flow chart showing an example of a procedure of substrate processing performed by the substrate processing apparatus 1 according to the embodiment.

[0111] In the substrate processing according to the embodiment, first, the controller 3 controls the substrate transfer device and the like to load the wafer W into the processing chamber 20 through the loading / unloading port of the processing chamber 20 and hold it on the rotating holder 30 (step S101).

[0112] Next, the control unit 3 controls the upper supply unit 40 and the like to discharge high-temperature SPM from the nozzle 42a onto the front surface of the wafer W, thereby performing substrate processing on the wafer W (step S102). Then, the control unit 3 controls the upper supply unit 40 and the lower supply unit 50 and the like to discharge DIW from the liquid supply nozzle 42b and the back surface nozzle 53 onto both surfaces of the wafer W, thereby performing rinsing processing on the wafer W (step S103).

[0113] Next, the control unit 3 controls the upper supply unit 40 and the lower supply unit 50 to perform a cleaning process on the wafer W (step S104). The details of the cleaning process will be described later.

[0114] Next, the control unit 3 controls the upper supply unit 40 and the lower supply unit 50 to rinse the wafer W (step S105). The details of the rinse process will be described later.

[0115] Finally, the control unit 3 controls the spin holder 30 and the like to perform a drying process such as spin drying on the wafer W (step S106), thereby completing the series of substrate processing steps.

[0116] In the present disclosure, the substrate processing performed prior to the processing of steps S104 and S105 is not limited to the substrate processing by SPM, and various substrate processing may be performed. In the present disclosure, the substrate processing apparatus 1 may perform only the processing of steps S104 to S106 on a wafer W that has been subjected to substrate processing in another substrate processing apparatus.

[0117] 20 is a flow chart showing an example of a procedure of a cleaning process executed by the substrate processing apparatus 1 according to the embodiment. In the cleaning process according to the embodiment, first, the control unit 3 controls the upper supply unit 40 and the like to discharge SC1 from the liquid supply nozzle 42b to the center of the front surface of the wafer W, and the liquid supply nozzle 42b forms a liquid film of SC1 on the front surface of the wafer W (step S201). The process of S201 is an example of a first process.

[0118] Next, the control unit 3 controls the upper supply unit 40 and the like to discharge SC1 from the cleaning nozzle 42c onto the center of the front surface of the wafer W (step S202). The process of S202 is an example of a second process.

[0119] Next, the control unit 3 controls the upper supply unit 40 and the like to discharge the process gas at a first flow rate (flow rate F21) from the cleaning nozzle 42c to the center of the front surface of the wafer W simultaneously with SC1. As a result, the control unit 3 discharges the mixed fluid M to the center of the front surface of the wafer W (step S203). The process of S203 is an example of a third process.

[0120] Next, the control unit 3 controls the upper supply unit 40 and the like to change the discharge flow rate of the processing gas from the cleaning nozzle 42c to a second flow rate (flow rate F22) that is larger than the first flow rate (flow rate F21) (step S204).

[0121] Then, the control unit 3 moves the cleaning nozzle 42c, which discharges the mixed fluid M whose discharge flow rate of the process gas has been changed to the second flow rate (flow rate F22), from above the center of the wafer W to above the peripheral edge (step S205). The processes of steps S204 and S205 are an example of a fourth process.

[0122] Next, the control unit 3 controls the upper supply unit 40 and the like to move the cleaning nozzle 42c, which discharges the mixed fluid M, from above the peripheral portion of the wafer W to above the central portion (step S206). The process of S206 is an example of a fifth process.

[0123] Next, the control unit 3 determines whether or not to further reciprocate the cleaning nozzle 42c from which the mixed fluid M is discharged above the wafer W (Step S207). If it is determined that the cleaning nozzle 42c is to further reciprocate above the wafer W (Yes in Step S207), the control unit 3 returns to the process of Step S205.

[0124] On the other hand, if it is determined that the cleaning nozzle 42c should not be further reciprocated above the wafer W (step S207, No), the series of cleaning processes is ended.

[0125] In parallel with the processes of steps S201 to S207 described above, the control unit 3 controls the lower supply unit 50 and the like to discharge high-temperature SC1 from the rear surface nozzle 53 onto the central part of the rear surface of the wafer W (step S208). The process of S208 is an example of a ninth process.

[0126] 21 is a flow chart showing an example of a procedure of a rinsing process performed by the substrate processing apparatus 1 according to the embodiment. In the rinsing process according to the embodiment, first, the control unit 3 controls the upper supply unit 40 and the like to change the discharge flow rate of the processing gas from the cleaning nozzle 42c to a third flow rate (flow rate F23) that is lower than the second flow rate (step S301). The process of S301 is an example of an eighth process.

[0127] Next, the control unit 3 controls the upper supply unit 40 and the like to move the liquid supply nozzle 42b from which SC1 is discharged to the center (center Wa) of the wafer W (step S302). Then, the control unit 3 controls the upper supply unit 40 and the like to discharge room temperature DIW, which is a rinsing liquid, from the liquid supply nozzle 42b (step S303). The process of S303 is an example of a sixth process.

[0128] Next, the control unit 3 controls the upper supply unit 40 and the like to stop the discharge of the process gas from the cleaning nozzle 42c from which the mixed fluid M is discharged (step S304). Then, the control unit 3 controls the upper supply unit 40 and the like to stop the discharge of SC1 from the cleaning nozzle 42c from which SC1 is discharged (step S305). The processes of steps S304 and S305 are an example of a seventh process.

[0129] Finally, the control unit 3 controls the upper supply unit 40 and the like to perform a rinsing process on the wafer W with the DIW at room temperature discharged from the liquid supply nozzle 42b (step S306), thereby completing a series of rinsing processes.

[0130] In parallel with the processes of steps S301 to S306 described above, the control unit 3 controls the lower supply unit 50 and the like to discharge room temperature DIW from the rear surface nozzle 53 to the central part of the rear surface of the wafer W (step S307).

[0131] 22 is a flowchart showing another example of the procedure of the cleaning process performed by the substrate processing apparatus 1 according to the embodiment. In the cleaning process according to the another example, the liquid process for the back surface of the wafer W shown as the process in step S208 in FIG. 20 is different from the example in FIG.

[0132] The other processes in steps S401 to S407 are similar to those in steps S201 to S207 shown in FIG. 20, and therefore detailed description thereof will be omitted.

[0133] In another example of the cleaning process, in parallel with the processes of steps S401 to S407, the control unit 3 controls the lower supply unit 50 and the like to discharge high-temperature DIW from the rear surface nozzle 53 onto the central part of the rear surface of the wafer W (step S408). The process of S408 is another example of the ninth process.

[0134] In this way, in another example, DIW, which is cheaper than SC1, is discharged onto the rear surface of the wafer W to heat the rear surface of the wafer W. This makes it possible to perform the cleaning process efficiently and at low cost at a high temperature.

[0135] The substrate processing method according to the embodiment includes a first step (step S201), a second step (step S202), a third step (step S203), and a fourth step (steps S204 and S205). In the first step (step S201), a liquid (SC1) is discharged from the liquid supply nozzle 42b onto the center of a rotating substrate (wafer W) to form a liquid film of the liquid (SC1) on the substrate (wafer W). In the second step (step S202), a cleaning liquid (SC1) is discharged from the cleaning nozzle 42c onto the center of the substrate (wafer W) on which the liquid film of the liquid (SC1) has been formed. In the third step (step S203), a mixed fluid M of the cleaning liquid (SC1) and gas is discharged onto the center of the substrate (wafer W) by discharging a gas at a first flow rate (flow rate F21) from the cleaning nozzle 42c onto the substrate (wafer W). In the fourth step (steps S204 and S205), the flow rate of the gas discharged from the cleaning nozzle 42c is changed to a second flow rate (flow rate F22) greater than the first flow rate (flow rate F21), and the cleaning nozzle 42c from which the mixed fluid M is discharged and the liquid supply nozzle 42b from which the liquid (SC1) is discharged are moved from above the center of the substrate (wafer W) to above the peripheral edge. This makes it possible to suppress the occurrence of liquid splashing on the wafer W during the cleaning process with the mixed fluid M.

[0136] Moreover, the substrate processing method according to the embodiment further includes a fifth step (step S206) and a sixth step (step S303). In the fifth step (step S206), after the cleaning nozzle 42c reaches above the peripheral portion of the substrate (wafer W), the cleaning nozzle 42c ejects the mixed fluid M and the liquid supply nozzle 42b ejects the liquid (SC1) from the liquid supply nozzle 42b while moving the cleaning nozzle 42c and the liquid supply nozzle 42b from above the peripheral portion of the substrate (wafer W) to above the central portion. In the sixth step (step S303), the liquid supply nozzle 42b that has moved to above the central portion of the substrate (wafer W) ejects the rinse liquid (DIW) onto the substrate (wafer W). This allows at least a portion of the front surface of the wafer W to dry when the process is switched from the cleaning process to the rinsing process, thereby suppressing adhesion of particles to the wafer W.

[0137] Moreover, the substrate processing method according to the embodiment further includes a seventh step (steps S304 and S305). In the seventh step (steps S304 and S305), after starting the sixth step (step S303), the cleaning nozzle 42c first stops discharging the gas, and then stops discharging the cleaning liquid (SC1). This dries at least a part of the front surface of the wafer W when transitioning from the cleaning process to the rinsing process, thereby preventing particles from adhering to the wafer W.

[0138] The substrate processing method according to the embodiment further includes a fifth step (step S206) and an eighth step (step S301). In the fifth step (step S206), after the cleaning nozzle 42c reaches above the peripheral portion of the substrate (wafer W), the cleaning nozzle 42c and the liquid supply nozzle 42b are moved from above the peripheral portion to above the central portion of the substrate (wafer W) while discharging the mixed fluid M from the cleaning nozzle 42c and discharging the liquid (SC1) from the liquid supply nozzle 42b. In the eighth step (step S301), the flow rate of the gas discharged from the cleaning nozzle 42c that has moved to above the central portion of the substrate (wafer W) is changed to a third flow rate (flow rate F23) that is smaller than the second flow rate (flow rate F22). This makes it possible to prevent the pattern of the semiconductor device formed in the central portion of the wafer W from collapsing.

[0139] Moreover, the substrate processing method according to the embodiment further includes a ninth step (step S208). In the ninth step (step S208), when the fourth step (steps S204 and S205) is performed, another liquid (SC1) having a temperature higher than room temperature is discharged from the rear surface nozzle 53 onto the rear surface of the substrate (wafer W). This allows the cleaning process to be efficiently performed at a high temperature.

[0140] Although the embodiment of the present disclosure has been described above, the present disclosure is not limited to the above embodiment, and various modifications are possible without departing from the spirit of the present disclosure. For example, in the above embodiment, an example is shown in which SC1 is used as a cleaning liquid, which is one of the raw materials of the mixed fluid M, but one of the raw materials of the mixed fluid M is not limited to SC1, and various processing liquids can be used.

[0141] The disclosed embodiments should be considered to be illustrative and not restrictive in all respects. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0142] W wafer (example of substrate) Wa center (example of central part) 1. Substrate Processing Equipment 30 Rotational support part 42b Liquid supply nozzle 42c Cleaning nozzle 53 Back nozzle F21 Flow rate (an example of the first flow rate) F22 Flow rate (an example of the second flow rate) F23 Flow rate (an example of the third flow rate) M Mixed fluid

Claims

1. a rotation holder that rotatably holds the substrate; a cleaning nozzle that is movable from a center portion to a peripheral portion of the substrate above the substrate that is held and rotated by the rotating holder, and that ejects a mixed fluid of a cleaning liquid and a gas onto the substrate; a liquid supply nozzle that is provided above the substrate and is movable integrally with the cleaning nozzle, and that ejects liquid onto the substrate; A control unit for controlling each unit; Equipped with the cleaning nozzle is capable of ejecting the cleaning liquid and the gas independently; The control unit is a first process of discharging the liquid from the liquid supply nozzle to a central portion of the substrate to form a liquid film of the liquid on the substrate; a second process of discharging the cleaning liquid from the cleaning nozzle onto a central portion of the substrate on which a liquid film of the liquid has been formed; a third process of discharging the mixed fluid onto a central portion of the substrate by discharging the gas from the cleaning nozzle at a first flow rate onto the substrate; a fourth process of changing a flow rate of the gas discharged from the cleaning nozzle to a second flow rate greater than the first flow rate, and moving the cleaning nozzle from which the mixed fluid is discharged and the liquid supply nozzle from which the liquid is discharged from above the center of the substrate to above the peripheral edge of the substrate. Substrate processing equipment.

2. The control unit is a fifth process of discharging the mixed fluid from the cleaning nozzle and the liquid from the liquid supply nozzle after the cleaning nozzle has reached above the peripheral portion of the substrate, while moving the cleaning nozzle and the liquid supply nozzle from above the peripheral portion to above a central portion of the substrate; and a sixth process of discharging a rinsing liquid onto the substrate from the liquid supply nozzle that has moved to above the center of the substrate. The substrate processing apparatus according to claim 1 .

3. The control unit is After the sixth process is started, a seventh process is further performed in which the discharge of the gas from the cleaning nozzle is first stopped and then the discharge of the cleaning liquid is stopped. The substrate processing apparatus according to claim 2 .

4. The control unit is a fifth process of discharging the mixed fluid from the cleaning nozzle and the liquid from the liquid supply nozzle after the cleaning nozzle has reached above the peripheral portion of the substrate, while moving the cleaning nozzle and the liquid supply nozzle from above the peripheral portion to above a central portion of the substrate; and changing a flow rate of the gas discharged from the cleaning nozzle that has moved to above the center of the substrate to a third flow rate that is smaller than the second flow rate. The substrate processing apparatus according to any one of claims 1 to 3.

5. a back surface nozzle that ejects another liquid onto a back surface of the substrate held by the spin holder, The control unit is A ninth process is further performed in which the other liquid having a temperature higher than room temperature is discharged from the rear surface nozzle onto the rear surface of the substrate when the fourth process is performed. The substrate processing apparatus according to any one of claims 1 to 3.

6. a first step of discharging liquid from a liquid supply nozzle onto a central portion of a rotating substrate to form a liquid film of the liquid on the substrate; a second step of discharging a cleaning liquid from a cleaning nozzle onto a central portion of the substrate on which the liquid film has been formed; a third step of discharging a mixed fluid of the cleaning liquid and the gas onto a central portion of the substrate by discharging a gas from the cleaning nozzle at a first flow rate onto the substrate; a fourth step of changing a flow rate of the gas discharged from the cleaning nozzle to a second flow rate greater than the first flow rate, and moving the cleaning nozzle from which the mixed fluid is discharged and the liquid supply nozzle from which the liquid is discharged from above a center portion of the substrate to above a peripheral portion of the substrate; A substrate processing method comprising:

7. a fifth step of moving the cleaning nozzle and the liquid supply nozzle from above the peripheral portion of the substrate to above a central portion of the substrate while discharging the mixed fluid from the cleaning nozzle and discharging the liquid from the liquid supply nozzle after the cleaning nozzle has reached above the peripheral portion of the substrate; and a sixth step of discharging a rinsing liquid onto the substrate from the liquid supply nozzle that has moved to above the center of the substrate. The substrate processing method according to claim 6 .

8. and a seventh step of first stopping the discharge of the gas from the cleaning nozzle and then stopping the discharge of the cleaning liquid after starting the sixth step. The substrate processing method according to claim 7 .

9. a fifth step of moving the cleaning nozzle and the liquid supply nozzle from above the peripheral portion of the substrate to above a central portion of the substrate while discharging the mixed fluid from the cleaning nozzle and discharging the liquid from the liquid supply nozzle after the cleaning nozzle has reached above the peripheral portion of the substrate; and an eighth step of changing a flow rate of the gas discharged from the cleaning nozzle that has moved to above the center of the substrate to a third flow rate that is smaller than the second flow rate. The substrate processing method according to any one of claims 6 to 8.

10. The method further includes a ninth step of ejecting another liquid having a temperature higher than room temperature from a rear nozzle onto the rear surface of the substrate when the fourth step is performed. The substrate processing method according to any one of claims 6 to 8.

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