Film deposition apparatus, method for manufacturing electronic device, and method for depositing film

Abstract

To provide a technology that can inhibit particles from entering a space between a substrate and a mask.SOLUTION: A film deposition apparatus for depositing a vapor deposition material in a pixel formation region of a substrate via a mask including a plurality of openings includes a placing part for placing at least part of a contact region of a peripheral region in the pixel formation region thereon. The placing part places a substrate in which a wall part is formed so that a plane of the pixel formation region projects on a side of the mask from the contact region between the pixel formation region and the contact region thereon.SELECTED DRAWING: Figure 3C

Description

[Technical field]

[0001] The present invention relates to a technique for forming a film on a substrate, and to a film forming apparatus, a method for manufacturing an electronic device, and a film forming method. [Background technology]

[0002] There is known a technique for aligning a substrate and a mask, and then depositing a deposition material onto the substrate through the mask to form a film. The film is formed in a state where the aligned substrate and the mask are in close contact with each other. For example, Patent Document 1 discloses the configuration of a film forming apparatus for aligning a substrate and a mask placed on a placement section and forming a film. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-007538 A Summary of the Invention [Problem to be solved by the invention]

[0004] From the viewpoint of improving the adhesion between the substrate and the mask and protecting the mask, it is preferable to prevent particles that may be generated by contact between the substrate and the mounting part from entering between the substrate and the mask.

[0005] The present invention provides a technique capable of suppressing particles from entering between a substrate and a mask. [Means for solving the problem]

[0006] A film formation apparatus according to one embodiment of the present invention is an apparatus for forming a film of a deposition material in a pixel formation region of a substrate through a mask having a plurality of openings, The substrate is provided with a mounting portion for mounting at least a portion of a contact area of ​​a peripheral region of the pixel formation region, and the mounting portion mounts the substrate on which a wall portion is formed between the pixel formation region and the contact area such that a surface of the pixel formation region protrudes from the contact area toward the mask. Effect of the Invention

[0007] According to the present invention, it is possible to provide a technique capable of suppressing particles from entering between a substrate and a mask. [Brief description of the drawings]

[0008] [Figure 1] Schematic diagram of a part of a manufacturing line for electronic devices. [Diagram 2] 1 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention. [Figure 3A] 3A and 3B are perspective views of a substrate and a mask and a partially enlarged view of the mask. [Figure 3B] FIG. [Figure 3C] FIG. [Figure 4] 3A is a cross-sectional view taken along line AA in FIG. 3A, (B) is a cross-sectional view taken along line BB in FIG. 3A, and (C) is a cross-sectional view taken along line CC in FIG. 3A. [Diagram 5] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 6] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 7] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 8] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 9] 3A and 3B are diagrams illustrating the operation of the film forming apparatus of FIG. 2. [Figure 10] 4A and 4B are explanatory views of another example of the configuration of the substrate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0010] First Embodiment <Electronic device manufacturing line> FIG. 1 is a schematic diagram showing a part of the configuration of an electronic device manufacturing line 100 to which the film forming apparatus of the present invention can be applied. In each drawing, arrows X and Y indicate horizontal directions perpendicular to each other, and arrow Z indicates a vertical direction (gravity direction). The manufacturing line of FIG. 1 is used, for example, for manufacturing light-emitting elements of an organic EL display device. The manufacturing line 100 includes a transfer chamber 120 having an octagonal shape in a plan view. A substrate 101 is carried into the transfer chamber 120 from a transfer path 110, and the substrate 101 on which a film has been formed is carried out from the transfer chamber 120 to a transfer path 111.

[0011] A plurality of film forming apparatuses 1 for performing film forming processing on a substrate 101 are arranged around the transfer chamber 120. A transfer chamber 130 is arranged adjacent to each film forming apparatus 1. A storage chamber 140 for storing a mask 102 is arranged around the transfer chamber 130, which has an octagonal shape in a plan view.

[0012] A transport unit 121 for transporting the substrate 101 is disposed in the transport chamber 120. The transport unit 121 in this embodiment is a horizontal articulated robot, and transports the substrate 101 by mounting it in a horizontal position on its hand. The transport unit 121 performs a transport operation for transporting the substrate 101 transported from the transport path 110 to the film forming apparatus 1, and a transport operation for transporting the substrate 101, on which a film has been formed in the film forming apparatus 1, from the film forming chamber 1 to the transport path 111.

[0013] A transport unit 131 for transporting the mask 102 is disposed in each transport chamber 130. The transport unit 131 in this embodiment is a horizontal articulated robot, and transports the mask 102 by mounting it in a horizontal position on its hand. The transport unit 131 transports the mask 102 from the storage chamber 140 to the film forming apparatus 1 and transports the mask 102 from the film forming apparatus 1 to the storage chamber 140.

[0014] <Film forming equipment> 2 is a schematic diagram of a film forming apparatus 1 according to one embodiment of the present invention. The film forming apparatus 1 is an apparatus for forming a film of a deposition material on a substrate 101, and forms a thin film of the deposition material in a predetermined pattern using a mask 102. The material of the substrate 101 on which a film is formed in the film forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal. Particularly in this embodiment, the substrate 101 is, for example, a glass substrate on which TFTs (Thin Film Transistors) are formed, or a silicon wafer on which semiconductor elements are formed.

[0015] The deposition material may be an organic material or an inorganic material (metal, metal oxide, etc.). The film forming apparatus 1 is applicable to a manufacturing apparatus for manufacturing electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), and optical components, and is particularly applicable to a manufacturing apparatus for manufacturing organic EL panels. In the following description, an example will be described in which the film forming apparatus 1 forms a film on the substrate 101 by vacuum deposition, but the present invention is not limited to this, and various film forming methods such as sputtering and CVD can be applied.

[0016] The film forming apparatus 1 has a box-shaped vacuum chamber 2. The internal space of the vacuum chamber 2 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 2 is connected to a vacuum pump (not shown). An evaporation unit 10 is disposed in the internal space of the vacuum chamber 2. The evaporation unit 10 includes an evaporation source (film forming source) that emits an evaporation material (film forming material) upward. A shutter 10a that restricts and releases the emission of the evaporation material is disposed above the evaporation unit 10. The shutter 10a is opened and closed by an opening and closing mechanism (not shown). FIG. 2 shows a case where the shutter 10a is in a closed state, and the emission of the evaporation material by the evaporation unit 10 is restricted. An adhesion prevention plate 2a is also disposed above the evaporation unit 10. The adhesion prevention plate 2a prevents the evaporation material from unnecessarily adhering to the following components disposed in the upper part of the internal space of the vacuum chamber 2.

[0017] A substrate support plate 3 that supports the substrate 101 in a horizontal position is provided in the internal space of the vacuum chamber 2. In this embodiment, the substrate support plate 3 is an electrostatic chuck that attracts and holds the substrate 101 on its lower surface by electrostatic force. A cooling plate 4 is fixed on the substrate support plate 3. The cooling plate 4 is equipped with, for example, a water cooling mechanism, and cools the substrate 101 via the substrate support plate 3 during film formation.

[0018] The substrate support plate 3 and the cooling plate 4 are suspended from the magnet plate 5 via the support parts 5a so as to be displaceable in the Z direction. The magnet plate 11 is a plate that attracts the mask 102 by magnetic force. During film formation, the substrate 101 is sandwiched between the magnet plate 11 and the mask 102 by magnetic force, so that the adhesion between the substrate 101 and the mask 102 can be improved.

[0019] The film forming apparatus 1 includes a mask support unit 6 that supports the mask 102 during film formation. In this embodiment, the mask support unit 6 also transfers the substrate 101 between the transport unit 121 and the substrate support plate 3. The mask support unit 6 includes a pair of support members 6a spaced apart in the X direction. Each support member 6a is raised and lowered by a corresponding actuator 6b. In this embodiment, an actuator 6b is provided for each support member 6a, but the pair of support members 6a may be raised and lowered by one actuator 6b. The actuator 6b is, for example, an electric cylinder or an electric ball screw mechanism. The support member 6a includes a claw portion F1 (mounting portion) at its lower end. The peripheral portion of the substrate 101 or the mask 102 is placed on the claw portion F1. In the example of FIG. 2, the mask 102 is placed on the claw portion F1. The pair of support members 6a are raised and lowered synchronously to raise and lower the substrate 101 or the mask 102.

[0020] The film forming apparatus 1 includes an alignment unit 8 that aligns a substrate 101 and a mask 102. The alignment apparatus 8 includes a driving mechanism 80 and a plurality of measurement units SR. The driving mechanism 80 includes a distance adjustment unit 81, a support shaft 82, a stand 83, and a position adjustment unit 84.

[0021] The distance adjustment unit 81 is a mechanism for raising and lowering the support shaft 82 in the Z direction, and includes, for example, an electric cylinder or an electric ball screw mechanism. A magnet plate 5 is fixed to the lower end of the support shaft 82, and the substrate support plate 3 is raised and lowered via the magnet plate 5 by raising and lowering the support shaft 82. By raising and lowering the substrate support plate 3, the distance between the substrate 101 and the mask 102 is adjusted, and the substrate 101 and the mask 102 supported by the substrate support plate 3 are brought closer to each other and separated from each other in the thickness direction (Z direction) of the substrate 101. In other words, the distance adjustment unit 81 brings the substrate 101 and the mask 102 closer to each other in the direction in which they are superimposed, and separates them in the opposite direction. The "distance" adjusted by the distance adjustment unit 81 is the so-called vertical distance (or perpendicular distance), and the distance adjustment unit 81 can also be said to be a unit for adjusting the vertical position of the substrate 101. The distance adjustment unit 81 is mounted on the position adjustment unit 84 via a stand 83.

[0022] The position adjustment unit 84 adjusts the relative position of the substrate 101 with respect to the mask 102 by displacing the substrate support plate 3 on the XY plane. That is, the position adjustment unit 80 can also be said to be a unit that adjusts the horizontal positions of the mask 102 and the substrate 101. The position adjustment unit 80 can displace the substrate support plate 6 in a rotational direction (θ direction) around an axis in the X, Y, and Z directions. In this embodiment, the position of the mask 102 is fixed and the substrate 101 is displaced to adjust their relative positions, but the mask 102 may be displaced to adjust the position, or both the substrate 101 and the mask 102 may be displaced.

[0023] The position adjustment unit 84 includes a fixed plate 20a and a movable plate 20b. The fixed plate 84a and the movable plate 84b are rectangular frame-shaped plates, and the fixed plate 84a is fixed onto the upper wall portion 20 of the vacuum chamber 2. An actuator is provided between the fixed plate 20a and the movable plate 20b for displacing the movable plate 20b relative to the fixed plate 20a in the X-direction, Y-direction, and rotational directions around the Z-direction axes.

[0024] A frame-shaped stand 83 is mounted on the movable plate 84b, and a distance adjustment unit 81 is supported on the stand 83. When the movable plate 84b is displaced, the stand 83 and the distance adjustment unit 81 are displaced together. This allows the substrate 101 to be displaced in the rotational directions around the axes in the X-, Y-, and Z-directions. The upper wall 20 has openings through which the support shaft 82 and the support members 6a and 7a pass. These openings are sealed by sealing members (such as bellows) not shown, and the inside of the vacuum chamber 2 is kept airtight.

[0025] The measurement unit SR measures the positional deviation between the substrate 101 and the mask 102. The measurement unit SR in this embodiment is an imaging device (camera) that captures an image. The measurement unit SR is disposed on the upper wall portion 20 and is capable of capturing an image inside the vacuum chamber 2. Alignment marks (not shown) are formed on the substrate 101 and the mask 102, respectively. The measurement unit SR captures images of the alignment marks of the substrate 101 and the mask 102. The amount of positional deviation between the substrate 101 and the mask 102 is calculated based on the position of each alignment mark, and the position adjustment unit 84 adjusts the relative positions of the substrate 101 and the mask 102 to eliminate the amount of positional deviation.

[0026] The control device 9 controls the entire film forming apparatus 1. The control device 9 includes a processing unit 90, a storage unit 91, an input / output interface (I / O) 92, and a communication unit 93. The processing unit 90 is a processor such as a CPU, and controls the film forming apparatus 1 by executing a program stored in the storage unit 92. The storage unit 91 is a storage device such as a ROM, RAM, or HDD, and stores various control information in addition to the program executed by the processing unit 90. The I / O 92 is an interface that transmits and receives signals between the processing unit 90 and an external device. The communication unit 93 is a communication device that communicates with a higher-level device or other control devices via a communication line.

[0027] <Example of substrate and mask configuration> 3A, 3B, and 3C show configuration examples of the substrate 101 and the mask 102. The substrate 101 is a circular silicon wafer, and after film formation and the like, a plurality of chips 101a are cut out from the substrate 101. The mask 102 is a circular member similar to the substrate 101, and includes mask portions 102b corresponding to the respective chips 101a, and a frame portion 102a surrounding the mask portions 102b. The mask portions 102b are formed with a plurality of openings (through holes) 102c through which a deposition material to be deposited on the substrate 101 passes, and the deposition pattern on the substrate 101 is determined by the arrangement of the openings 102c.

[0028] FIG. 3B is a partial enlarged view of the substrate 101 and the mask 102, and FIG. 3B (A) is a plan view (XY plan view) of the substrate 101 seen from the Z direction, in which pixels corresponding to the plurality of chips 101a are formed in the pixel formation region 300. A region (peripheral region 310) surrounding the pixel formation region 300 is provided around the pixel formation region 300. The claw portion F1 (mounting portion) moves in the left-right direction (X direction) to mount at least a portion (contact region 311) of the peripheral region 310 of the substrate 101. As shown in FIG. 3B (A), the substrate 101 is mounted on the claw portion F1 at a plurality of contact regions 311 in the left-right direction. For example, as shown in FIG. 3B (A), the substrate 101 may be mounted on the claw portion F1 at a total of four contact regions 311, two on each side.

[0029] FIG. 3B (B) is a side view (XZ side view) of the substrate 101 as viewed from the Y direction, and between the pixel formation region 300 and the contact region 311, a wall portion 312 is formed so that the surface of the pixel formation region 300 protrudes from the contact region 311 toward the mask 102 side (mask side). In FIG. 3B (B), the height of the wall portion 312 is H1, and the distance (length) between the wall portion 312 of the substrate 101 and the end portion of the substrate 101 is L1. The substrate 101 on which the wall portion 312 is formed has a stepped shape in which the thickness (H0-H1) of the contact region 311 is thinner than the thickness H0 of the pixel formation region 300. In each contact region 311 placed on the claw portion F1, a similar wall portion 312 is formed, and a similar stepped shape is provided. The substrate 101 is a silicon wafer, and the wall portion 312 can be provided as a structure formed on the substrate 101 using a semiconductor manufacturing process.

[0030] 3B(C) is a side view (XZ side view) of the substrate 101 and the mask 102 as viewed from the Y direction, and is a side view of the mask 102 as viewed from the Y direction in a positional relationship corresponding to the substrate 101. A region (peripheral region 410) surrounding the mask region 102e in which the multiple mask portions 102b are formed is provided around the mask region 102e. The claw portion F1 moves in the left-right direction (X direction) to place at least a portion of the peripheral region 410 of the mask 102 (contact region 411).

[0031] The mask 102 has a wall portion 412 formed such that the surface of the mask 102 (surface of the mask region 102e) facing the pixel formation region 300 of the substrate 101 protrudes from the contact region 411 to the substrate 101 side (substrate side). In (C) of FIG. 3B, the height of the wall portion 412 is H2, and the height H2 of the wall portion 412 of the mask 102 may be the same as the height H1 of the wall portion 312 of the substrate 101, or may be formed higher than the height H1 of the wall portion 312 of the substrate 101. The mask 102 on which the wall portion 412 is formed has a stepped shape in which the thickness of the contact region 411 is thinner than the thickness of the mask region 102e.

[0032] The distance (length) between the wall portion 412 of the mask 102 and the end of the mask 102 is L2. The wall portion 412 of the mask 102 is formed at a position where the distance L2 between the wall portion 412 of the mask 102 and the end of the mask 102 is longer (L2>L1) than the distance L1 between the wall portion 312 of the substrate 101 and the end of the substrate 101. The wall portion 412 can be formed in the mask 102 using a mask manufacturing process.

[0033] FIG. 3C is a partial enlarged view of the substrate 101 and the mask 102, and (A) of FIG. 3C is a partial enlarged view of the substrate 101 and the mask 102 in a comparative example. In the configuration of the comparative example, the wall portion 312 of the substrate 101 and the wall portion 412 of the mask 102 are not provided. When the substrate 101 or the mask 102 contacts the claw portion F1 when placed on the claw portion F1, particles P may be generated due to friction and wear at the time of contact. In the comparative example, the generated particles P are easily invaded into the pixel formation region 300. When the generated particles P adhere between the pixel formation region 300 and the surface of the mask 102 (the surface of the mask region 102e), it may become a factor that inhibits adhesion. In addition, depending on the size of the particles P, it may not be possible to ensure an accurate positional relationship between the pixel formation region 300 and the mask 102 during film formation, which may cause blurring of the pattern.

[0034] FIG. 3C (B) is a partial enlarged view of the substrate 101 and the mask 102 according to the embodiment. Even if particles P are generated due to contact with the claw portion F1 when the substrate 101 or the mask 102 is placed on the claw portion F1, the particles P are held (remain) by the stepped shape of the wall portion 312, so that the particles P can be prevented from entering (mixing) into the pixel formation region 300. According to the configuration of the present embodiment, the particles P are prevented from entering the pixel formation region 300, so that the adhesion between the pixel formation region 300 and the surface of the mask 102 (the surface of the mask region 102e) can be improved. This makes it possible to ensure an accurate positional relationship between the pixel formation region 300 and the mask 102 during film formation, and to form a pattern with higher accuracy.

[0035] 3C(C) is a diagram showing a modified example of the configuration of FIG. 3C(B), in which the claw portion F1 (mounting portion) is provided with a collector 350 that collects particles P that may be generated when the substrate 101 is mounted. The collector 350 is provided at a position near the mounting surface SF where the claw portion F1 abuts against the contact region 311.

[0036] As an example of the configuration of the collection unit 350, the collection unit 350 can collect (attract) particles P by electrostatic force. For example, a charged sheet (charged member) may be provided inside the housing of the collection unit 350, and a predetermined voltage may be applied to the charged sheet, which becomes charged and collects particles by electrostatic force.

[0037] The processing unit 90 can control so as to apply a predetermined voltage to the charged sheet from the power supply of the film forming apparatus 1. For example, a detection unit (sensor) that detects the amount (number or concentration) of particles P may be provided in the film forming apparatus 1, and the processing unit 90 may control the predetermined voltage based on the amount of particles P detected by the detection unit.

[0038] As an example of the configuration of the collection unit 350, it may be configured as an adhesive member that collects particles by adhesive force. For example, an adhesive member that collects particles P by adhesive force may be attached to a position near the placement surface SF as the collection unit 350. In addition to this, in combination with the configuration using electrostatic force, an adhesive member may be attached to the outside of the housing of the collection unit 350, and electrostatic force may be generated by an electrostatically charged sheet (electrostatically charged member) inside the housing, and particles may be collected based on the adhesive force of the adhesive member and the electrostatic force.

[0039] As a configuration for suppressing the intrusion of the particles P into the pixel formation region 300, a protrusion 360 protruding from the pixel formation region 300 toward the mask 102 may be provided between the pixel formation region 300 and the contact region 311. The protrusion 360 may be formed integrally with the substrate 101 by a semiconductor manufacturing process, or a separate member may be provided. In order to increase the adhesion between the substrate 101 and the mask 102, the height of the protrusion 360 may be, for example, higher than the height H1 of the wall portion 312 of the substrate 101 and equal to or less than the combined height (H1+H2) of the height H1 of the wall portion 312 of the substrate 101 and the height H2 of the wall portion 412 of the mask 102.

[0040] The position where the protrusion 360 is provided is not limited to between the pixel formation region 300 and the contact region 311, and may be provided in a region surrounding the pixel formation region 300. In this case, a recess may be provided in a region surrounding the mask region 102e (peripheral region 410) so as to avoid contact between the protrusion 360 and the mask 102.

[0041] FIG. 3C(C) shows an example in which the protruding portion 360 is provided on the substrate 101 side, but the present invention is not limited to this example, and the protruding portion 360 may be provided on the mask 102 side.

[0042] Moreover, the substrate 101 may be provided with the protrusion 360 instead of the wall 312. In this case, the height of the protrusion 360 may be equal to or less than the height H2 of the wall 412 of the mask 102 in order to improve the adhesion between the substrate 101 and the mask 102.

[0043] 4(A) to 4(C) are cross-sectional views taken along lines AA, BB, and CC in FIG. 3A. The mask 102 includes a mask body 1020 and a magnetic body 1021 formed on the mask body 1020. The mask body 1020 is made of a non-magnetic material such as silicon (Si). By using a silicon wafer as the mask body 1020, it is possible to form finer and more precise openings 102c by applying semiconductor manufacturing technology. The frame portion 102a is a relatively thick portion, and the mask portion 102b is a relatively thin portion. The frame portion 102a has higher rigidity than the mask portion 102b. The mask portion 102b can be formed thin without significantly decreasing the rigidity of the entire mask 102.

[0044] A plurality of slits 102d are formed on the surface of the mask body 102. Each slit 102d is a bottomed groove that is cross-shaped in plan view and is formed in the mask portion 102b. By forming the slits 102d, when stress acts on the mask body 102, deformation at the slits 102 is permitted, and damage such as cracks in the mask body 102 can be prevented.

[0045] The magnetic body 1021 is, for example, a thin film of a magnetic material such as nickel (Ni). In this embodiment, the magnetic force of the magnet plate 5 is used to bring the mask 102 and the substrate 101 into close contact with each other during film formation. If the mask body 1020 is made of a non-magnetic material as in this embodiment, the magnetic force cannot be used to obtain a close contact effect. By forming the magnetic body 1021 on the mask body 1020, the magnetic force of the magnet plate 5 acts on the magnetic body 1021, and the magnetic force can be used to obtain a close contact effect between the mask 102 and the substrate 101.

[0046] The magnetic body 1021 in this embodiment is formed on the surface of the mask body 1020, particularly on the surface that overlaps with the substrate 101. The magnetic force provides a tight contact between the mask 102 and the substrate 101. The magnetic body 1021 is formed to surround each of the openings 102c, and in this embodiment, in particular, is formed in a lattice shape in which the vertical and horizontal lines are perpendicular to each other. The magnetic force provides an improved tight contact with the substrate 101 around the openings 102c, and the deposition material discharged through the openings 102c can be deposited accurately on the desired portion of the substrate 101.

[0047] <Control example> An example of control of the film forming apparatus 1 executed by the processing unit 90 of the control unit 9 will be described. Figures 5(A) to 9(B) are explanatory diagrams of the operation of the film forming apparatus 1, showing an example from loading of the substrate 101 to film formation and unloading. Here, the configurations of the substrate 101 and the mask 102 are as described in Figures 3B and 3C.

[0048] FIG. 5(A) shows the state in which the substrate 101 has been carried into the vacuum chamber 2. The substrate 101 is carried below the substrate support plate 3 by the transport robot 121. The substrate adsorption surface 3a on the lower surface of the substrate support plate 3 is horizontal. Next, the mask support unit 6 transfers the substrate 101 from the transport robot 121 to the substrate support plate 3. FIG. 5(B) shows this operation. By raising the support member 6a, the peripheral edge of the substrate 101 is placed on the claw portion F1, and the substrate 101 is raised from the transport robot 121 and pressed against the substrate adsorption surface 3a of the substrate support plate 3. The electrostatic chuck of the substrate support plate 3 is operated to adsorb and hold the substrate 101.

[0049] Next, the mask 102 is carried into the vacuum chamber 2. FIG. 6(A) shows the state in which the mask 102 is carried into the vacuum chamber 2. The mask 102 is carried into the vacuum chamber 2 from the storage chamber 140 by the transport robot 131. The mask 102 is positioned directly below the substrate 101. Next, the mask 102 is transferred from the transport robot 131 to the mask support unit 6 and positioned at the alignment position. FIG. 6(B) shows this operation. By raising the support member 6a, the periphery of the mask 102 is placed on the claw portion F1, and the mask 102 is raised from the transport robot 131. The mask 102 is supported by the support member 6a, and is further raised to be positioned at the alignment position. In this embodiment, the mask 102 is raised to be positioned at the alignment position, but a configuration in which the substrate 101 is lowered to be positioned at the alignment position may also be used.

[0050] Next, the alignment operation is performed. As shown in Fig. 7(A), the measurement unit SR measures the relative positions of the alignment marks on the substrate 101 and the mask 102. If the measurement result (the amount of misalignment between the substrate 101 and the mask 102) is within the allowable range, the alignment operation is terminated. If the measurement result is outside the allowable range, a control amount (the amount of displacement of the substrate 101) is set based on the measurement result to bring the amount of misalignment within the allowable range.

[0051] The "amount of misalignment" is defined as the distance and direction (X, Y, θ) of the misalignment. Based on the set control amount, the position adjustment unit 80 is operated as shown in Fig. 7(B). As a result, the substrate support plate 3 is displaced on the XY plane, and the relative position of the substrate 101 with respect to the mask 102 is adjusted.

[0052] Whether or not the measurement results are within the allowable range can be determined, for example, by calculating the distances between the alignment marks and comparing the average value or the sum of squares of the distances with a preset threshold value.

[0053] After the relative positions are adjusted, the measurement unit SR again measures the relative positions of the alignment marks on the substrate 101 and the mask 102. If the measurement result is within the allowable range, the alignment operation is terminated. If the measurement result is outside the allowable range, the relative position of the substrate 101 with respect to the mask 102 is adjusted again. Thereafter, the measurement and relative position adjustment are repeated until the measurement result falls within the allowable range.

[0054] Next, a film forming operation is performed. First, the substrate 101 is overlapped with the mask 102. Figure 8 (A) shows this operation. When the substrate support plate 3 is lowered, the substrate 101 is placed on the mask 102, and the entire surface to be processed of the substrate 101 comes into contact with the mask 102. The magnet plate 5 abuts on the cooling plate 4, and from above, the magnet plate 5, the cooling plate 4, the substrate support plate 3, the substrate 101, and the mask 102 are in close contact with each other. The mask 102 is attracted by the magnetic force of the magnet plate 5, and the mask 102 and the substrate 101 can be brought into close contact with each other as a whole. Since the mask 102 has the magnetic material 1021 (FIGS. 3A, 4(B) and 4(C) formed thereon, a stronger magnetic attraction force can be obtained. As described above, according to this embodiment, the mask 102 made of a non-magnetic material can be used, and the adhesion between the substrate 101 and the mask 102 can be improved. Even if stress is generated in the mask body 1020 due to the action of the magnetic force, the slits 102d allow deformation, and damage such as cracks in the mask 1020 can be prevented.

[0055] 8B, the shutter 10a is opened and the deposition material is released from the deposition unit 10. The deposition material is deposited on the substrate 101 through the mask 102.

[0056] When such film formation is completed, the mask 102 and the substrate 101 are each unloaded. Fig. 9(A) shows the operation of unloading the mask 102. First, the magnet plate 5 is raised, and the substrate 101 and the mask 102 are separated from each other. After the hand portion of the transfer robot 131 is inserted below the mask 102, the support member 6a of the mask support unit 6 is lowered, and the mask 102 is transferred from the support member 6a to the transfer robot 131. The transfer robot 131 transfers the mask 102 to the storage chamber 140.

[0057] Next, the substrate 101 on which the film has been formed is carried out. The support members 6a of the mask support unit 6 are raised, and the substrate 101 is supported from below by the claws F1. The suction of the substrate support unit 3 to the substrate 101 is released, and the substrate 101 is transferred to the support members 6a. After the hand of the transport robot 121 is advanced below the substrate 101, the support members 6a of the mask support unit 6 are lowered as shown in FIG. 9(B), and the substrate 101 is transferred from the support members 6a to the transport robot 121. The transport robot 121 transports the substrate 101 to the transport path 111. This completes the operations from carrying in the substrate 101, to forming a film on it, and carrying it out.

[0058] 4, an example in which the magnetic body 1021 is formed on the mask body 1020 has been described, but the magnetic body may also be formed on the substrate 101. Figures 10(A) and 10(B) show such an example. These figures correspond to the cross-sectional view of Figure 4(B), and also show cross-sectional views of the substrate 101 aligned with respect to the mask 102.

[0059] 10(A), a magnetic body 101d is formed around one pixel region 101b, which is a deposition target portion, on the substrate 101. In the illustrated example, the magnetic body 101d is formed on the surface of a bank 101c around one pixel region 101b. The magnetic body 101d is, for example, a thin film of a magnetic material such as nickel (Ni). The magnetic body 101d and the magnetic body 1021 are disposed at a position where they overlap each other when the substrate 101 and the mask 102 are appropriately aligned.

[0060] 10B shows a state in which the substrate 101 is superimposed on the mask 102 after the substrate 101 and the mask 102 are aligned. The magnetic force of the magnet plate 5 causes the magnetic body 101d and the magnetic body 1021 to attract each other, improving the adhesion between the substrate 101 and the mask 102. Furthermore, the magnetic body 101d and the magnetic body 1021 attract each other, so that the relative positions of the opening 102c and the one-pixel region 101b are self-aligned, and the deposition material can be more accurately deposited on the one-pixel region 101b, which is the deposition target portion, through the opening 102c.

[0061] <Other embodiments> The present invention can also be realized by a process in which a program for implementing one or more of the functions of the above-described embodiments is supplied to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. The present invention can also be realized by a circuit (e.g., ASIC) that implements one or more of the functions.

[0062] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0063] 1: film forming device, 8: alignment unit, 10: deposition unit (film forming source), 101: substrate, 102: mask, 300: pixel formation area, 310:, 311:, 312: wall (wall of substrate), 412: wall (wall of mask)

Claims

1. A film forming apparatus for forming a film on a pixel formation region of a substrate by applying a deposition material through a mask having a plurality of openings, comprising: a mounting portion for mounting at least a part of a contact area of ​​a peripheral area of ​​the pixel formation area, a mounting portion for mounting the substrate on which a wall portion is formed between the pixel formation region and the contact region such that a surface of the pixel formation region protrudes from the contact region toward the mask.

2. 2. The film forming apparatus according to claim 1, wherein the substrate on which the wall portion is formed has a stepped shape in which the thickness of the contact region is smaller than the thickness of the pixel formation region.

3. 3. The film forming apparatus according to claim 2, wherein the substrate is a silicon wafer, and the wall portion is a structure formed on the substrate using a semiconductor manufacturing process.

4. 2. The film forming apparatus according to claim 1, further comprising a protruding portion protruding from the pixel formation region toward the mask side between the pixel formation region and the contact region.

5. At least a part of a contact area of ​​a peripheral area of ​​the mask is placed on the placement part, 2. The film forming apparatus according to claim 1, wherein the mounting portion mounts the mask on which a wall portion is formed so that a surface of the mask facing the pixel formation region protrudes from a contact region of the mask toward the substrate.

6. 6. The film forming apparatus according to claim 5, wherein the wall portion of the mask is formed at a position where the distance between the wall portion of the mask and the end of the mask is longer than the distance between the wall portion of the substrate and the end of the substrate.

7. 6. The film forming apparatus according to claim 5, wherein the mask on which the wall portion is formed has a stepped shape in which the thickness of the contact region of the mask is thinner than the thickness of the region of the mask facing the pixel formation region.

8. 2. The film forming apparatus according to claim 1, wherein the mounting portion is provided with a collector for collecting particles at a position near a mounting surface that is in contact with the contact area.

9. 9. The film forming apparatus according to claim 8, wherein the collection section includes a charging member, and collects the particles by electrostatic force of the charging member that is charged by applying a predetermined voltage to the charging member.

10. A detection unit for detecting the amount of the particles; a processing unit that controls a predetermined voltage based on the amount of the particles detected by the detection unit; The film forming apparatus according to claim 9 , further comprising:

11. 9. The film forming apparatus according to claim 8, wherein an adhesive member for collecting the particles by adhesive force is attached as the collecting portion to a position near the mounting surface.

12. A method for manufacturing an electronic device, comprising a film forming step of forming a film on a substrate by using the film forming apparatus according to claim 1 .

13. A film formation method for a film formation apparatus that forms a film on a pixel formation region of a substrate by applying a deposition material through a mask having a plurality of openings, comprising the steps of: a placing step of placing at least a part of a contact area of ​​a peripheral area of ​​the pixel formation area on a placing part of the film forming apparatus; a substrate having a wall portion formed between the pixel formation region and the contact region such that a surface of the pixel formation region protrudes from the contact region toward the mask, the substrate being placed on the placement portion, the substrate being placed on the placement portion in the placing step.

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