Ultrasonic sensing element assembly and ultrasonic sensing element

Abstract

To provide an ultrasonic sensing element assembly and an ultrasonic sensing element that are improved in layout efficiency.SOLUTION: Four connection pads are such that each of the connection pads is positioned between two of a first sensing unit, a second sensing unit, a third sensing unit, and a fourth sensing unit and positioned to pass through a through hole in a first surface and a second surface of a sensing area, and such that two lines of the connection pads are connected to the first sensing module while other two are connected to the second sensing module. Four welding pads are positioned on the second surface of the sensing area, and overlap respective vertical projections of the first, second, third, and fourth sensing units, where each of the welding pads is connected to one of the four connection pads through a line.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to an ultrasonic detector assembly and an ultrasonic detector element, and more particularly to an ultrasonic detector assembly and an ultrasonic detector element having efficient layout. [Background technology]

[0002] Ultrasonic sensing technology is gradually maturing, and its application fields are gradually expanding from traditional fingerprint recognition, and the larger sensor configuration is enabling it to sense longer distances, which is why it is becoming more and more prevalent in areas such as displays and automobiles. Summary of the Invention [Problem to be solved by the invention]

[0003] However, as product technology gradually matures, how to optimize the wafer layout becomes a problem. [Means for solving the problem]

[0004] In view of the above-mentioned problems, the present invention has the following configuration: That is, an ultrasonic detector element assembly including a semiconductor substrate and a plurality of ultrasonic detector elements, the semiconductor substrate having a first surface and a second surface, the plurality of ultrasonic detector elements being formed in an array on the semiconductor substrate, each of the ultrasonic detector elements being formed in a sensing area of ​​the semiconductor substrate, each of the ultrasonic detector elements having a first sensing module, a second sensing module, four connection pads, and four welding pads, the first sensing module being formed on the first surface of the sensing area and having a first sensing unit and a second sensing unit, the first sensing unit and the second sensing unit being arranged in parallel, the second sensing module being formed on the first surface of the sensing area and having a third sensing unit and a fourth sensing unit, the third sensing unit and the fourth sensing unit being arranged in parallel, and the first sensing unit, the second sensing unit, the third sensing unit, the third sensing unit, the fourth sensing unit, the fourth sensing unit, the fourth sensing unit, the fifth sensing unit, the fifth sensing unit, the fifth sensing unit, the sixth sensing unit, the seventh sensing unit, the eighth ... the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are respectively located at the four corners of the first surface of the sensing area and arranged symmetrically; the four connection pads are respectively located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit, and are located so as to pass through through holes on the first surface and the second surface of the sensing area, and the connection pads are connected to the first sensing module by two first lines and to the second sensing module by two second lines; the four welding pads are located on the second surface of the sensing area, and vertical projections of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit overlap, and each welding pad is connected to one of the four connection pads by a third line.

[0005] The above ultrasonic detection element assembly is further characterized in that the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are piezoelectric ultrasonic sensors.

[0006] The above ultrasonic detection element assembly is also characterized in that each of the connection pads is located between two of the multiple welding pads, and the two welding pads are arranged symmetrically about the center of the connection pad.

[0007] The above ultrasonic detection element assembly is further characterized in that each of the ultrasonic detection elements further has a first void detection unit, the first void detection unit being located at the center of the first surface of the sensing area.

[0008] The above ultrasonic detection element assembly is further characterized in that the area of ​​the first void detection unit is smaller than the area of ​​the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0009] The above ultrasonic detection element assembly is characterized in that each of the ultrasonic detection elements further has a plurality of second void detection units, and the plurality of second void detection units are located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0010] The above ultrasonic detection element assembly is further characterized in that each of the ultrasonic detection elements has four of the second void detection units, the four second void detection units being located on four sides of the first void detection unit, respectively, and arranged symmetrically.

[0011] The above ultrasonic detection element assembly is further characterized in that the area of ​​the multiple second void detection units is smaller than the area of ​​the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0012] Also, there is provided an ultrasonic detection element including a semiconductor substrate, a first sensing module, a second sensing module, four connection pads, and four welding pads, wherein the semiconductor substrate has a first surface and a second surface, the first sensing module is formed on the first surface of the semiconductor substrate, and has a first sensing unit and a second sensing unit, the first sensing unit and the second sensing unit being arranged in parallel, the second sensing module is formed on the first surface of the semiconductor substrate, and has a third sensing unit and a fourth sensing unit, the third sensing unit and the fourth sensing unit being arranged in parallel, and the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are respectively located at four corners of the first surface of the semiconductor substrate, and are symmetrically arranged. an ultrasonic detection element including: four connection pads arranged in a row, each of the connection pads being located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit; the connection pads being located in through holes on the first surface and the second surface penetrating the semiconductor substrate; two first lines of the plurality of connection pads being connected to the first sensing module and two second lines being connected to the second sensing module; the four welding pads being located on the second surface of the semiconductor substrate; vertical projections of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit, respectively, overlap; and each welding pad being connected to one of the four connection pads by a third line.

[0013] Moreover, the above ultrasonic detection element is characterized in that the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are piezoelectric ultrasonic sensors.

[0014] The ultrasonic detection element is also characterized in that each of the connection pads is located between two of the plurality of welding pads, and the two welding pads are arranged symmetrically about the connection pad.

[0015] The ultrasonic detection element as described above further comprises a first void detection unit, the first void detection unit being located at the center of the first surface of the semiconductor substrate.

[0016] Moreover, in the above ultrasonic detection element, an area of ​​the first void detection unit is smaller than that of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0017] The above-mentioned ultrasonic detection element further comprises a plurality of second void detection units, each of which is located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0018] The above ultrasonic detection element is further characterized in that it comprises four of the second void detection units, the four second void detection units being located on four sides of the first void detection unit, respectively, and arranged symmetrically.

[0019] The above ultrasonic detection element is further characterized in that the area of ​​the plurality of second void detection units is smaller than the area of ​​the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit. Effect of the Invention

[0020] The connection pads 15 are formed by through-hole technology, and the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit, as well as the welding pads, are regularly arranged, so that the utilization rate of the wafer can be optimized, detection by the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit can be facilitated, and the manufacturing is also easy. [Brief description of the drawings]

[0021] [Figure 1] FIG. 2 is a top view of the ultrasonic sensing element assembly of the present invention. [Diagram 2] FIG. 2 is a top view of the ultrasonic detection element of the present invention. [Diagram 3] FIG. 2 is a bottom view of the ultrasonic detection element of the present invention. [Figure 4] FIG. 13 is a top view of another embodiment of an ultrasonic sensing element. [Diagram 5] 5 is a top view of an ultrasonic detection element according to another embodiment different from that shown in FIG. 4. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] In the present invention, when an element is described as being "disposed on" another element, this may mean that the element is directly disposed on the other element, or that the element is disposed via an intermediate element. However, when an element is specifically described as being "disposed directly on" another element, there are no intermediate elements present.

[0023] In addition, in the following description, the terms "first", "second", etc., mean that a certain unit, part, area, or portion is different from another unit, part, area, or portion, and are not concepts that indicate order. In addition, relative terms such as "lower", "upper", "inner" or "outer" may be used in the specification of the present application to explain the relationship between a certain component and another component, but if a certain component is turned upside down, the up and down will naturally be reversed, so in this application, "lower", "upper", "inner" etc. are only described for the convenience of explaining the embodiment, and even if "lower" is described in the specification, it does not always mean lower, and if the orientation of the component of the suspected infringing product is reversed, the up and down will naturally be reversed, so in such cases, the interpretation of the claims of the present application should be flexible in interpreting the direction.

[0024] The present invention will be described with reference to Figures 1 to 3. Reference will now be made to Figure 1, where Figure 1 is a top view of an ultrasonic sensing element assembly of the present invention, Figure 2 is a top view of an ultrasonic sensing element of the present invention, and Figure 3 is a bottom view of an ultrasonic sensing element of the present invention.

[0025] 1, the ultrasonic detector assembly 100 includes a plurality of ultrasonic detector elements 1 and a semiconductor substrate 2 which is a rectangular flat plate. Here, the semiconductor substrate 2 is a silicon wafer, and the ultrasonic detector elements 1 are formed in an array on the semiconductor substrate 2. The semiconductor substrate 2 has a first surface 21 shown in FIG. 2 and a second surface 23 shown in FIG. 3.

[0026] As shown in Fig. 1, each ultrasonic detection element 1 is formed in a sensing area 25 of a semiconductor substrate 2. As shown in Fig. 2 and Fig. 3, each ultrasonic detection element 1 has a first sensing module 11, a second sensing module 13, four (4) connection pads 15, and four welding pads 17.

[0027] The first sensing module 11 is formed on the first surface 21 of the sensing area 25, and has a first sensing unit 111 and a second sensing unit 113, where the first sensing unit 111 and the second sensing unit 113 are arranged in parallel.

[0028] The second sensing module 13 is formed on the first surface 21 of the sensing area 25, and has a third sensing unit 131 and a fourth sensing unit 133, where the third sensing unit 131 and the fourth sensing unit 133 are arranged in parallel.

[0029] In addition, the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133 are respectively located at the four corners of the first surface 21 of the sensing area 25 and are arranged symmetrically.

[0030] Each connection pad 15 is located between two of the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133. That is, one connection pad 15 is disposed between the first sensing unit 111 located at the upper left and the second sensing unit 113 located at the upper right. In addition, another connection pad 15 is provided between the third sensing unit 131 located at the lower left and the fourth sensing unit 133 located at the lower right.

[0031] A different connection pad 15 is provided between the first sensing unit 111 located at the upper left and the third sensing unit 131 located at the lower left. Furthermore, a different connection pad 15 from the above three is provided between the second sensing unit 113 located at the upper right and the fourth sensing unit 133 located at the lower right. The sensing area 25 is located within a through-hole 27 that penetrates the first surface 21 and the second surface 23 .

[0032] Two of the connection pads 15 are connected to the first sensing module 11 by first lines 30 depicted on the upper and left sides of FIG. 2, and are respectively connected to a positive electrode (not shown) and a negative electrode (not shown) of the first sensing module 11. That is, two of the connection pads 15 can be electrically connected to the first sensing module 11. The connection pads 15 are also connected to the second sensing module 13 by other two second lines 32 depicted on the lower and right sides of FIG. 2, and are respectively connected to a positive electrode and a negative electrode of the second sensing module 13. That is, the other two of the connection pads 15 can be electrically connected to the second sensing module 13.

[0033] As shown in FIG. 3, the four welding pads 17 are located on the second surface 23 of the sensing area 25 and overlap with the vertical projections of the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133, respectively.

[0034] That is, the four welding pads 17 are located directly below (directly behind) the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133. Each welding pad 17 is connected to one of the four connection pads 15 by a third line 34 formed on the second surface 23.

[0035] In this way, the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133 are connected to components (elements) of the welding pad 17 via the welding pad 17 and the connection pad 15, thereby creating a circuit board or the like that can realize electrical connection.

[0036] 1, the ultrasonic detector element assembly 100 is substantially a part of a wafer integrated circuit layout. The ultrasonic detector elements 1 are arranged symmetrically in an array, so that one or more ultrasonic detector elements 1 can be used according to product requirements.

[0037] For example, it may be cut into 1x2 or 2x4. In this way, different product requirements can be provided on the same wafer, so that the utilization rate of the wafer is greatly improved. Also, after the wafer is cut, the sensing area 25 where the ultrasonic detection element 1 is located becomes the substrate of the element. The ultrasonic detection element 1 is the minimum size that can be cut.

[0038] Here, the first sensing unit 111, the second sensing unit 113, the third sensing unit 131 and the fourth sensing unit 133 are piezoelectric ultrasonic sensors, such as piezoelectric micromachined ultrasonic transducers (PMUTs).

[0039] 3, in this embodiment, each connection pad 15 is located between two welding pads 17, and the two welding pads 17 are symmetrically arranged around the connection pad 15. This symmetrical arrangement makes the overall layout and subsequent package inspection more convenient.

[0040] Fig. 4 is a top view of another embodiment of the ultrasonic detection element. As shown in Fig. 4, in this embodiment, the ultrasonic detection element 1 further includes a first hole detection unit 41. The first hole detection unit 41 is located in the center of the first surface 21 of the sensing area 25.

[0041] In detail, the area of ​​the first void detection unit 41 is smaller than the areas of the first sensing unit 111, the second sensing unit 113, the third sensing unit 131 and the fourth sensing unit.

[0042] In addition, the first void detection unit 41 can be manufactured in the same process as the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133, but is not connected to the welding pad 17 (not shown in FIG. 4).

[0043] The structure is substantially the same as the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133, all of which have cavities and can be used for positioning, noise filtering, crosstalk reduction, and bandwidth supplementary functions.

[0044] Next, a description will be given with reference to Fig. 5. Here, Fig. 5 is a top view of another embodiment of the ultrasonic detection element different from Fig. 4. The ultrasonic detection element 1 includes a plurality of second void detection units 43. Here, taking two cases as an example, the second void detection units 43 are located not only between the first sensing unit 111 and the second sensing unit 113, but also between the third sensing unit 131 and the fourth sensing unit 133.

[0045] However, this is merely an example and is not intended to limit the technical scope to the embodiments shown herein. The second void detection unit 43 has a structure and function similar to that of the first void detection unit 41. Similarly, the area of ​​the second void detection unit 43 is smaller than the areas of the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133.

[0046] Returning to Fig. 2 for further explanation, in this embodiment, the ultrasonic detection element 1 includes four second void detection units 43. The four second void detection units 43 are located on the four sides of the first void detection unit 41, respectively, and are arranged symmetrically. Note that the number and arrangement of the second void detection units 43 are merely an example, and are not limited thereto.

[0047] As described above, the connection pads 15 are formed by through-hole technology, and the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133, as well as the welding pads 17 are regularly arranged, thereby optimizing the utilization rate of the wafer, facilitating detection by the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133, and making the manufacturing process easy.

[0048] Moreover, the arrayed ones can be cut and selected according to actual needs, and cutting can be performed on the same wafer to meet the requirements for different products, which facilitates customization.

[0049] The technical contents of the present invention have been described above together with the preferred embodiments. However, the present invention is not limited to the described embodiments, and even if a person skilled in the art makes various modifications within the scope of the present invention, they will still be included in the technical scope of the present invention. Therefore, the technical scope of the present invention is defined based on the description of the claims. [Explanation of symbols]

[0050] 1 Ultrasonic detection element 11 First sensing module 111 First sensing unit 113 Second sensing unit 13 Second Sensing Module 131 Third sensing unit 133 4th sensing unit 15 Connection Pads 17 Welding Pad 2. Semiconductor Substrate 21 First Side 23 The Second Side 25 Sensing Area 27 Through hole 30 The First Track 32 The Second Track 34 The Third Track 41 First hole detection unit 43 Second Hole Detection Unit 100 Ultrasonic detection element assembly

Claims

1. An ultrasonic sensing element assembly comprising a semiconductor substrate and a plurality of ultrasonic sensing elements, the semiconductor substrate has a first surface and a second surface; The ultrasonic detection elements are formed in an array on the semiconductor substrate, and each of the ultrasonic detection elements is formed in a sensing area of ​​the semiconductor substrate; Each of the ultrasonic sensing elements includes a first sensing module, a second sensing module, four connection pads, and four welding pads; The first sensing module is formed on the first surface of the sensing area, and has a first sensing unit and a second sensing unit, the first sensing unit and the second sensing unit being arranged in parallel; the second sensing module is formed on the first surface of the sensing area and has a third sensing unit and a fourth sensing unit, the third sensing unit and the fourth sensing unit being arranged in parallel; the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are respectively located at four corners of the first surface of the sensing area and are arranged symmetrically; The four connection pads are each located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit, and are located to pass through through holes on the first surface and the second surface of the sensing area, and the connection pads are connected to the first sensing module by two first lines and to the second sensing module by two second lines; An ultrasonic detection element assembly, characterized in that the four welding pads are located on the second surface of the sensing area, and vertical projections of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit overlap, and each welding pad is connected to one of the four connection pads by a third line.

2. 2. The ultrasonic sensing element assembly of claim 1, wherein the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are piezoelectric ultrasonic sensors.

3. 2. The ultrasonic sensing element assembly according to claim 1, wherein each of the connection pads is located between two of the plurality of welding pads, and the two welding pads are arranged in a central symmetrical arrangement with the connection pads.

4. Each of the ultrasonic sensing elements further includes a first void sensing unit; The ultrasonic detector assembly of claim 1 , wherein the first void-detecting unit is located at the center of the first surface of the sensing area.

5. The ultrasonic detector assembly of claim 4 , wherein the area of ​​the first void detection unit is smaller than the area of ​​the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

6. Each of the ultrasonic detection elements further includes a plurality of second void detection units; The ultrasonic sensing element assembly of claim 4, wherein the plurality of second void detection units are located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

7. Each of the ultrasonic detection elements has four of the second void detection units, 7. The ultrasonic detector assembly according to claim 6, wherein the four second void detection units are located on four sides of the first void detection unit, respectively, and are arranged symmetrically.

8. The ultrasonic detection element assembly of claim 6, wherein the areas of the second void detection units are smaller than the areas of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

9. An ultrasonic sensing element comprising a semiconductor substrate, a first sensing module, a second sensing module, four connection pads, and four welding pads, the semiconductor substrate has a first surface and a second surface; The first sensing module is formed on the first surface of the semiconductor substrate, and has a first sensing unit and a second sensing unit, the first sensing unit and the second sensing unit being arranged in parallel; the second sensing module is formed on the first surface of the semiconductor substrate and has a third sensing unit and a fourth sensing unit, the third sensing unit and the fourth sensing unit being arranged in parallel; the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are respectively located at four corners of the first surface of the semiconductor substrate and are arranged symmetrically; The four connection pads are each located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit, and the connection pads are located in through holes on the first surface and the second surface that penetrate the semiconductor substrate, and the two first lines of the multiple connection pads are connected to the first sensing module and the two second lines are connected to the second sensing module; An ultrasonic sensing element, characterized in that the four welding pads are located on the second surface of the semiconductor substrate, and vertical projections of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit overlap, and each welding pad is connected to one of the four connection pads by a third line.

10. 10. The ultrasonic sensing element of claim 9, wherein the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are piezoelectric ultrasonic sensors.

11. 10. The ultrasonic sensing element according to claim 9, wherein each of the connection pads is located between two of the plurality of welding pads, and the two welding pads are arranged in a central symmetrical arrangement with the connection pads.

12. Further comprising a first void detection unit, The ultrasonic sensing element according to claim 9, wherein the first void-detecting unit is located at the center of the first surface of the semiconductor substrate.

13. The ultrasonic sensing element according to claim 12 , wherein an area of ​​the first void sensing unit is smaller than that of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

14. Further comprising a plurality of second void detection units; The ultrasonic sensing element of claim 12, wherein each of the second void sensing units is located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

15. Four of the second void detection units are provided, The ultrasonic detection element according to claim 14, wherein the four second void detection units are located on four sides of the first void detection unit, respectively, and are arranged symmetrically.

16. The ultrasonic sensing element of claim 14 , wherein the areas of the second void sensing units are smaller than the areas of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

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