Radiation detection apparatus, manufacturing method thereof, radiation diagnostic apparatus and ct apparatus

Abstract

To improve detection accuracy of radiation.SOLUTION: A radiation detection apparatus includes a plurality of unit structures each having a semiconductor layer that converts radiation into a charge, the unit structures being arranged to form an array, and a coupling member that couples two of the unit structures adjacent to each other in the array. The coupling member is formed from a material capable of being used as a vapor deposition material.SELECTED DRAWING: Figure 10

Description

[Technical field]

[0001] The present disclosure relates to a radiation detection device, a manufacturing method thereof, a radiation diagnostic device, and a CT device. [Background technology]

[0002] A radiation detection device having a semiconductor layer that converts radiation into an electric charge has been proposed. In some radiation detection devices, a large-screen sensor surface is formed by arranging multiple sensor units in a one-dimensional or two-dimensional array. Patent Document 1 describes a radiation detection device that aligns multiple substrates by inserting substrates on which semiconductor elements are mounted into a slit member. Patent Document 2 describes a radiation detector in which an adhesive or glue that absorbs X-rays is arranged in the gaps between adjacent modules among multiple modules in which multiple X-ray detection elements are arranged one-dimensionally or two-dimensionally. Patent Document 3 describes a technology for coating an insulating material on each side of multiple X-ray detection elements. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-37281 A [Patent Document 2] JP 2008-298556 A [Patent Document 3] JP 2003-329778 A Summary of the Invention [Problem to be solved by the invention]

[0004] When there is variation in height of the multiple semiconductor layers that detect radiation, the accuracy of radiation detection by the radiation detection device may decrease. In addition, since radiation that enters the gaps between the multiple semiconductor layers is not detected, the accuracy of radiation detection by the radiation detection device may decrease when the gaps are large. An object of some aspects of the present disclosure is to provide a technique for improving the accuracy of radiation detection. [Means for solving the problem]

[0005] In some embodiments, a radiation detection device is provided, comprising a plurality of unit structures arranged to form an array, each having a semiconductor layer that converts radiation into an electric charge, and a bonding member that bonds two adjacent unit structures to each other in the array, the bonding member being formed from a material that can be used as a deposition material. Effect of the Invention

[0006] The present disclosure makes it possible to improve the accuracy of radiation detection. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a block diagram illustrating an example of the configuration of a CT apparatus according to some embodiments. [Diagram 2] FIG. 1 is a perspective view illustrating an example of the configuration of a radiation detection apparatus according to some embodiments. [Diagram 3] FIG. 2 is a schematic perspective view illustrating an example of the configuration of a sensor module according to some embodiments. [Figure 4] FIG. 2 is a cross-sectional view illustrating an example of the configuration of a sensor unit according to some embodiments. [Diagram 5] FIG. 2 is a cross-sectional view illustrating an example of the configuration of a sensor unit according to some embodiments. [Figure 6] FIG. 2 is a cross-sectional view illustrating an example of the configuration of a sensor unit according to some embodiments. [Figure 7] FIG. 2 is a cross-sectional view illustrating an example of the configuration of a sensor unit according to some embodiments. [Figure 8]FIG. 2 is a cross-sectional view illustrating an example of the configuration of a sensor unit according to some embodiments. [Figure 9] FIG. 2 is a cross-sectional view illustrating an example of the configuration of a sensor unit according to some embodiments. [Figure 10] 5A to 5C are cross-sectional views illustrating an example method for manufacturing a radiation detection device in accordance with some embodiments. [Figure 11] 5A to 5C are cross-sectional views illustrating an example method for manufacturing a radiation detection device in accordance with some embodiments. [Figure 12] 5A to 5C are cross-sectional views illustrating an example method for manufacturing a radiation detection device in accordance with some embodiments. [Figure 13] FIG. 2 is a cross-sectional view illustrating an example of the configuration of a sensor unit according to some embodiments. [Figure 14] FIG. 2 is a cross-sectional view illustrating an example of the configuration of a sensor unit according to some embodiments. [Figure 15] FIG. 2 is a cross-sectional view illustrating an example of the configuration of a sensor unit according to some embodiments. [Figure 16] FIG. 13 is a cross-sectional view illustrating an example of solid-state bonding in some embodiments. [Figure 17] FIG. 13 is a cross-sectional view illustrating an example of solid-state bonding in some embodiments. [Figure 18] 5A to 5C are cross-sectional views illustrating an example method for manufacturing a radiation detection device in accordance with some embodiments. [Figure 19] 5A to 5C are cross-sectional views illustrating an example method for manufacturing a radiation detection device in accordance with some embodiments. [Figure 20] 5A to 5C are cross-sectional views illustrating an example method for manufacturing a radiation detection device in accordance with some embodiments. [Figure 21] 5A to 5C are cross-sectional views illustrating an example method for manufacturing a radiation detection device in accordance with some embodiments. [Figure 22] FIG. 13 is a schematic diagram illustrating an example of an arrangement of sensor units according to some embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0009] In the following description, radiation may include α-rays, β-rays, γ-rays, etc., which are beams made of particles (including photons) emitted by radioactive decay, as well as beams having the same or greater energy, such as X-rays, particle beams, cosmic rays, etc. In addition, in this application, photons such as X-rays and γ-rays, and particles such as β-rays and α-rays may be collectively referred to as radiation photons.

[0010] An example of the configuration of a computed tomography (CT) apparatus 100 according to some embodiments will be described with reference to the block diagram of Fig. 1. The CT apparatus 100 may include a radiation generation unit 101, a wedge 102, a collimator 103, a radiation detection device 104, a top plate 105, a rotating frame 106, a high-voltage generation device 107, a data acquisition system (DAS) 351, a signal processing unit 109, a display unit 110, and a control unit 111. This configuration is an example, and the CT apparatus 100 may have other configurations.

[0011] The CT device 100 may be a device capable of performing photon-counting CT. That is, the CT device 100 described in the following embodiment may be a device capable of reconstructing CT image data with a high S / N ratio by counting radiation transmitted through a subject using a photon-counting radiation detection device 104. Furthermore, the radiation detection device 104 described in the following embodiment may be a direct conversion detector that directly converts radiation photons into electric charges proportional to energy.

[0012] The radiation generating unit 101 irradiates radiation towards the radiation detection device 104. The radiation generating unit 101 is composed of, for example, a vacuum tube that generates X-rays. A high voltage and a filament current are supplied to the vacuum tube of the radiation generating unit 101 from a high voltage generator 107. X-rays are generated by irradiating thermal electrons from the cathode (filament) towards the anode (target).

[0013] The wedge 102 is a filter that adjusts the amount of radiation 121 irradiated from the radiation generating unit 101. The wedge 102 attenuates the amount of radiation so that the radiation 121 irradiated from the radiation generating unit 101 to the subject 120 has a predetermined distribution. The collimator 103 is composed of a lead plate or the like that narrows down the irradiation range of the radiation that has passed through the wedge 102. The radiation 121 generated by the radiation generating unit 101 is shaped into a cone beam via the collimator 103 and is irradiated to the subject 120 on the top board 105.

[0014] The radiation detection device 104 detects radiation 121 that has passed through the subject 120 from the radiation generation unit 101, and outputs a signal corresponding to the amount of radiation to the DAS 108. The subject 120 may be a living thing (e.g., a human or an animal) or an inanimate object.

[0015] The radiation detection device 104 may output a signal capable of measuring the energy value of a radiation photon each time a radiation photon is incident. The radiation photon is, for example, a radiation photon irradiated from the radiation generating unit 101 and transmitted through the subject 120. The radiation detection device 104 has a plurality of detection elements that output one pulse of an electric signal (analog signal) each time a radiation photon is incident. By counting the number of electric signals (pulses), it is possible to count the number of radiation photons incident on each detection element. Furthermore, by performing arithmetic processing on this signal, it is possible to measure the energy value of the radiation photon that caused the output of the signal.

[0016] The above-mentioned detection element may be, for example, a semiconductor detection element such as CdTe (cadmium telluride) or CdZnTe (cadmium zinc telluride) with electrodes disposed thereon. That is, the radiation detection device 104 is a direct conversion type detector that directly converts incident radiation photons into an electrical signal. The radiation detection device 104 has a plurality of the above-mentioned detection elements and ASICs (Application Specific Integrated Circuits) that are connected to the detection elements and count the radiation photons detected by the detection elements. The ASIC counts the number of radiation photons incident on the detection elements by discriminating between the individual charges output by the detection elements. The ASIC also measures the energy of the counted X-ray photons by performing arithmetic processing based on the magnitude of each charge. Furthermore, the ASIC outputs the counting result of the radiation photons to the DAS 108 as digital data.

[0017] The DAS 108 generates detection data based on the result of the counting process input from the radiation detection device 104. The detection data is, for example, a sinogram. The sinogram is data in which the results of the counting process of radiation incident on each detection element at each position of the radiation generation unit 101 are arranged. The sinogram is data in which the results of the counting process are arranged in a two-dimensional orthogonal coordinate system with the view direction and channel direction as axes. The DAS 108 generates a sinogram, for example, in units of rows in the slice direction of the radiation detection device 104. The result of the counting process is data in which the number of radiation photons is assigned to each energy bin. For example, the DAS 108 counts photons (radiation photons) originating from radiation irradiated from the radiation generation unit 101 and transmitted through the subject 120, and discriminates the energy of the counted radiation photons to obtain the result of the counting process. The DAS 108 is realized, for example, by a processor.

[0018] The rotating frame 106 has an annular shape and is rotatable. Inside the rotating frame 106, the radiation generating unit 101 (wedge 102, collimator 103) and the radiation detecting device 104 are arranged on opposite sides of the top plate 105. The radiation generating unit 101 and the radiation detecting device 104 are rotatable together with the rotating frame 106.

[0019] The high voltage generator 107 includes a boost circuit and outputs a high voltage to the radiation generating unit 101. For example, the high voltage generator 107 has electric circuits such as a transformer and a rectifier, and includes a high voltage generating unit that generates a high voltage to be applied to the radiation generating unit 101, and a radiation control unit that controls the output voltage according to the radiation generated by the radiation generating unit 101. The high voltage generating unit may be of a transformer type or an inverter type. The high voltage generator 107 may be provided on the rotating frame 106, or may be provided on a fixed frame (not shown). The DAS 108 includes an amplifier circuit and an analog / digital (A / D) conversion circuit, and outputs a signal from the radiation detecting device 104 to the signal processing unit 109 as digital data.

[0020] The signal processor 109 processes the signal output from the radiation detector 104. The signal processor 109 may include a central processing unit (CPU), a read-only memory (ROM), and a random access memory (RAM). The display unit 110 includes a flat display device and the like, and is capable of displaying radiation images. The controller 111 includes a CPU, a ROM, a RAM, and the like, and controls the operation of the entire CT device 100. For example, the controller 111 includes a processing circuit having a CPU and the like, and a driving mechanism such as a motor and an actuator. The controller 111 receives an input signal from an input interface and controls the operation of the gantry device and the bed device. For example, the controller 111 controls the rotation of the rotating frame 106, the tilt of the gantry device, the operation of the bed device and the tabletop, and the like. As an example, the controller 111 rotates the rotating frame 106 around an axis parallel to the X-axis direction according to input inclination angle (tilt angle) information as a control for tilting the gantry device. The control unit 111 may be provided in the gantry device or in the console device.

[0021] The input interface accepts various input operations from an operator, converts the accepted input operations into electrical signals, and outputs the electrical signals to the control unit 111. For example, the input interface accepts input operations such as reconstruction conditions when reconstructing CT image data and image processing conditions when generating post-processing images from CT image data from the operator. For example, the input interface is realized by a mouse, a keyboard, a trackball, a switch, a button, a joystick, a touchpad that performs input operations by touching the operation surface, a touch screen in which a display screen and a touchpad are integrated, a non-contact input circuit using an optical sensor, a voice input circuit, and the like. The input interface may be provided on the pedestal device. The input interface may also be configured with a tablet terminal or the like that can wirelessly communicate with the console device body. The input interface is not limited to only those that have physical operation parts such as a mouse and a keyboard. For example, an electrical signal processing circuit that receives an electrical signal corresponding to an input operation from an external input device provided separately from the console device and outputs the electrical signal to the control unit 111 is also included in the input interface.

[0022] The signal processing unit 109 may have a pre-processing function. The signal processing unit 109 can generate projection data by performing pre-processing such as logarithmic conversion processing, offset correction processing, inter-channel sensitivity correction processing, and beam hardening correction on the detection data output from the DAS 108 using the pre-processing function. The signal processing unit 109 may also have a reconstruction processing function. The signal processing unit 109 can generate CT image data by performing reconstruction processing using a filtered back projection method, an iterative reconstruction method, or the like on the projection data generated by the pre-processing function using the reconstruction processing function. The signal processing unit 109 can store the reconstructed CT image data in a memory using the reconstruction processing function.

[0023] The projection data generated from the counting results obtained by the photon counting CT includes information on the energy of the X-rays attenuated by passing through the subject 120. Therefore, the signal processing unit 109 can reconstruct, for example, CT image data of a specific energy component by using the reconstruction processing function. In addition, the signal processing unit 109 can reconstruct, for example, CT image data of each of a plurality of energy components by using the reconstruction processing function. In addition, the signal processing unit 109 can assign, for example, a color tone according to the energy component to each pixel of the CT image data of each energy component by using the reconstruction processing function, and generate image data in which a plurality of CT image data color-coded according to the energy component are superimposed. In addition, the signal processing unit 109 can generate image data that allows identification of the substance by using, for example, the K absorption edge specific to the substance by using the reconstruction processing function. Other image data generated by the signal processing unit 109 by using the reconstruction processing function include monochromatic X-ray image data, density image data, and effective atomic number image data.

[0024] To reconstruct CT image data, projection data for 360° around the subject is required, and projection data for 180° + fan angle is required even in the half-scan method. Either reconstruction method is applicable to this embodiment. For simplicity of explanation, the following will use a reconstruction method (full-scan reconstruction) that uses projection data for 360° around the subject.

[0025] The signal processing unit 109 may have an image processing function. The signal processing unit 109 can convert CT image data generated by the reconstruction processing function into image data such as a tomographic image of an arbitrary cross section or a three-dimensional image by rendering processing, using a known method, based on an input operation received from an operator via an input interface, using the image processing function. Furthermore, the signal processing unit 109 can store the converted image data in a memory using the image processing function.

[0026] The control unit 111 may have a scan control function. The control unit 111 controls the CT scan performed by the gantry device by using the scan control function. For example, the control unit 111 controls the operation of the high voltage generator 107, the radiation detection device 104, the DAS 108, and the bed driving device by using the scan control function, thereby controlling the collection process of the counting results in the gantry device. As an example, the control unit 111 controls the collection process of the projection data in the imaging for collecting the positioning image (scanogram) and in the main imaging (scan) for collecting the image used for diagnosis by using the scan control function. The control unit 111 may also have a display control function. The control unit 111 can control various image data stored in the memory to be displayed on the display unit 110 such as a display by using the display control function.

[0027] An example of the configuration of the radiation detection device 104 will be described with reference to the perspective view of Fig. 2. This configuration is one example, and the radiation detection device 104 may have other configurations. The radiation detection device 104 includes a base 201 and a plurality of sensor modules 202. The base 201 has an arc shape that is concave with respect to the radiation 121. The plurality of sensor modules 202 are fixed to the curved surface of the base 201 in a line along the circumferential direction. The base 201 is fixed to a rotating frame 106.

[0028] A configuration example of the sensor module 202 will be described with reference to the perspective view of FIG. 3. This configuration is one example, and the sensor module 202 may have other configurations. Each of the multiple sensor modules 202 included in the radiation detection device 104 may have the configuration described in FIG. 3. The sensor module 202 may include multiple sensor units 301a to 301d, a heat dissipation member 302, a frame 303, and a circuit board 304. In the following description, the multiple sensor units 301a to 301d are collectively referred to as sensor unit 301. The description of the sensor unit 301 may be applied to each of the multiple sensor units 301a to 301d.

[0029] The sensor unit 301 generates a signal according to radiation incident on the sensor unit 301. The sensor unit 301 and the circuit board 304 are connected by a cable (not shown, for example, a flexible cable). The signal generated by the sensor unit 301 is read out to the DAS 108 through the circuit board 304. The multiple sensor units 301 are arranged side by side in the direction in which the frame 303 extends. In the example of FIG. 3, one sensor module 202 includes four sensor units 301, but the number of sensor units is not limited to this example. Also, in the example of FIG. 3, the four sensor units 301 are arranged in a single row, but the multiple sensor units may be arranged in multiple rows.

[0030] The frame 303 is a member having rigidity for mounting the sensor unit 301. The frame 303 may be called a mount frame. The frame 303 may be made of, for example, metal. The frame 303 functions as a support member for supporting the sensor unit 301. A circuit board 304 is attached to the frame 303. The sensor units 301 and the circuit board 304 are located on opposite sides of the frame 303. The frame 303 is fixed to the base 201. For example, the frame 303 may be mechanically fixed to the base 201 using a fastener such as a screw, or may be chemically fixed to the base 201 using an adhesive.

[0031] The substrate 305 is disposed at a position covering the sensor units 301 included in the sensor module 202. In FIG. 3, the substrate 305 is shown transparently for the purpose of explanation. The substrate 305 may be disposed in common to the sensor units 301 included in one sensor module 202. For example, one integrated substrate 305 may be disposed for one sensor module 202. Furthermore, the substrate 305 may be disposed in common to the sensor modules 202. For example, one integrated substrate 305 may be disposed for one radiation detection device 104. The sensor units 301 are disposed to form an array. The sensor units 301 may form a one-dimensional array or a two-dimensional array.

[0032] The substrate 305 is fixed to the frame 303. The substrate 305 may be directly or indirectly fixed to the frame 303. For example, the frame 303 and the substrate 305 may each be fixed to the base 201, thereby indirectly fixing the substrate 305 to the frame 303.

[0033] The heat dissipation member 302 is located between the lower surface 408 of each of the sensor units 301a to 301d and the frame 303. One heat dissipation member 302 may be arranged in common for the sensor units 301. Alternatively, an individual heat dissipation member 302 may be arranged for each of the sensor units 301. For example, the heat dissipation member 302 may be wider than the width of the lower surface of the sensor unit 301 in the short side direction of the frame 303. The heat dissipation member 302 transfers heat generated in the sensor unit 301 to the frame 303. The heat dissipation member 302 may be made of, for example, metal. The sensor module 202 may not have the heat dissipation member 302. In this case, the heat generated in the sensor unit 301 is transferred directly to the frame 303.

[0034] A configuration example of the sensor unit 301 will be described with reference to the cross-sectional view of FIG. 4. This configuration is an example, and the sensor unit 301 may have other configurations. The sensor unit 301 may include a semiconductor layer 402, an interposer 404, an integrated circuit 406, and a mounting board 407. In the following description, the upper surface of each member in the drawing is referred to as the upper surface, and the lower surface in the drawing is referred to as the lower surface. The sensor unit 301 has an upper surface 401 located on the radiation incident side, and a lower surface 408 located on the opposite side to the upper surface 401. FIG. 4 shows only two sensor units 301 adjacent to each other in an array among the multiple sensor units 301 included in the radiation detection device 104. Any two adjacent sensor units 301 among the multiple sensor units 301 included in the radiation detection device 104 may have the configuration shown in FIG. 4.

[0035] The semiconductor layer 402 converts radiation into electric charges. An upper surface 401 of the semiconductor layer 402 is located on the incident side of the radiation 121. In the example of FIG. 4, the semiconductor layer 402 is located at the top of the sensor unit 301 (the position farthest from the frame 303). Therefore, the upper surface of the semiconductor layer 402 constitutes the upper surface 401 of the sensor unit 301.

[0036] The semiconductor layer 402 may be a single crystal substrate of a semiconductor that converts radiation directly into an electric charge, such as cadmium zinc telluride (CdZnTe) or cadmium telluride (CdTe). The semiconductor layer 402 may be a single crystal substrate of a semiconductor, such as silicon (Si), lead iodide (PbI2), mercury iodide (HgI2), bismuth iodide (BiI3), or thallium bromide (TlBr).

[0037] An upper surface 401 of the sensor unit 301 is covered by a substrate 305. The entire upper surface 401 of the sensor unit 301 may be covered by the substrate 305, or only a portion of the upper surface 401 of the sensor unit 301 may be covered by the substrate 305.

[0038] The upper surface 401 of the sensor unit 301 (the upper surface of the semiconductor layer 402 in the example of FIG. 4) and the lower surface of the substrate 305 (the lower surface of the conductive layer 412 in the example of FIG. 4) may be bonded to each other. This bonding may be performed using, for example, an adhesive or a sticky material. By bonding each of the multiple sensor units 301 to the substrate 305 provided in common to the multiple sensor units 301, it is possible to suppress variation in height of the upper surfaces 401 of the multiple sensor units 301.

[0039] The substrate 305 may include an insulating layer 411 and a conductive layer 412. The substrate 305 may be formed of a thin film such as a film. The conductive layer 412 faces the upper surface 401 of the sensor unit 301. The conductive layer 412 may be in contact with the upper surface 401 of the sensor unit 301. The conductive layer 412 may be made of a metal such as gold, silver, copper, aluminum, an alloy, or the like. The insulating layer 411 covers the conductive layer 412. The insulating layer 411 may be made of, for example, carbon fiber reinforced plastic (CFRP), amorphous carbon, a polyimide film, or the like.

[0040] The conductive layer 412 may be used to apply a voltage to the semiconductor layer 402. When used in this manner, the conductive layer 412 may be in contact with the semiconductor layer 402 or may be adhered to the semiconductor layer 402 using a conductive adhesive.

[0041] When the conductive layer 412 is used to apply a voltage to the semiconductor layer 402, each sensor unit 301 may not include an individual electrode for applying a voltage to the semiconductor layer 402, as shown in Fig. 4. Each sensor unit 301 may include an individual electrode (not shown) for applying a voltage to the semiconductor layer 402. When each sensor unit 301 has an individual electrode, the substrate 305 may not include the conductive layer 412. When the conductive layer 412 is disposed in common to the semiconductor layers 402 of the multiple sensor units 301 as in the example of Fig. 4, the variation in the voltage supplied to each semiconductor layer 402 can be reduced.

[0042] An electrode formed on the lower surface of the semiconductor layer 402 and an electrode formed on the upper surface of the interposer 404 are electrically and physically connected to each other by bumps 403. Individual electrodes are formed on the lower surface of the semiconductor layer 402 corresponding to the pixels of the sensor unit 301. An electrode formed on the lower surface of the interposer 404 and an electrode formed on the upper surface of the integrated circuit 406 are electrically and physically connected to each other by bumps 405. The bumps 403 and 405 are made of solder, for example. An anisotropic conductive film (ACF) may be used instead of the bumps 403 and 405. The interposer 404 relays signals between the semiconductor layer 402 and the integrated circuit 406. The interposer 404 may be omitted.

[0043] The integrated circuit 406 is attached to a mounting board 407. The integrated circuit 406 may be an energy resolving counter (ERCE). For example, the integrated circuit 406 may have a function of counting electrical pulses generated by radiation photons being incident on the semiconductor layer 402. Alternatively, the integrated circuit 406 may read out a voltage corresponding to the charge accumulated in the semiconductor layer 402 from the semiconductor layer 402.

[0044] Among the plurality of sensor units 301, two adjacent sensor units 301 in the array are bonded to each other by a bonding member 410. As described later, the bonding member 410 is formed by vapor deposition. That is, the bonding member 410 is formed of a material that can be used as a deposition material. Examples of such materials will be described later. By forming the bonding member 410 by vapor deposition, the sensor units 301 can be bonded to each other firmly even if the bonding member 410 is thin, as compared with the case where the bonding member 410 is formed by an adhesive or the like. Therefore, the gap between the two adjacent sensor units 301 (particularly, the gap between the two adjacent semiconductor layers 402) can be reduced. In addition, by bonding the two adjacent sensor units 301 to each other, it becomes easier to maintain a state in which the gap between these sensor units 301 is reduced. If the gap between the two adjacent sensor units 301 is large, the gap between the adjacent semiconductor layers 402 also becomes large, and the amount of radiation that cannot be detected increases. By reducing the gap between the two adjacent sensor units 301 as in the configuration of FIG. 4, it becomes possible to detect radiation with high accuracy, and the image quality of the radiation image is improved. Furthermore, by forming the bonding member 410 by vapor deposition, it is possible to reduce stress on the sensor unit 301 (particularly the semiconductor layer 402) compared to forming the bonding member 410 by an adhesive or the like. An adhesive generates residual stress on the sensor unit 301 due to volumetric shrinkage when solidified, but vapor deposition does not generate such residual stress.

[0045] 4, a portion of the bonding member 410 between the two semiconductor layers 402 may have a thickness equal to or less than the pitch of pixels formed in the sensor unit 301. When the bonding member 410 has insulating properties, the bonding member 410 can prevent the semiconductor layer 402 of one sensor unit 301 from being electrically short-circuited with the semiconductor layer 402 of another sensor unit 301.

[0046] 4, the bonding member 410 bonds the semiconductor layers 402 of two adjacent sensor units 301 in the array. The bonding member 410 also bonds the interposers 404 of two adjacent sensor units 301 in the array. The bonding member 410 also bonds the mounting substrates 407 of two adjacent sensor units 301 in the array. The bonding member 410 may be called a filler because it is filled in between two adjacent sensor units 301 in the array.

[0047] The bonding member 410 is filled between the semiconductor layer 402 and the interposer 404 of each sensor unit 301. This can suppress short circuits between the multiple bumps 403. The bonding member 410 is filled between the interposer 404 and the mounting substrate 407 of each sensor unit 301. This can suppress short circuits between the multiple bumps 405. The bonding member 410 covers the side of the semiconductor layer 402 and at least a part of the lower surface of the semiconductor layer 402 in each sensor unit 301. The bonding member 410 covers at least a part of the upper surface of the interposer 404, the side of the interposer 404, and at least a part of the lower surface of the interposer 404 in each sensor unit 301. The bonding member 410 covers at least a part of the upper surface of the mounting substrate 407 and the side of the mounting substrate 407 in each sensor unit 301. The coupling member 410 covers the top surface of the substrate 305 , the side surfaces of the substrate 305 , and the portions of the bottom surface of the substrate 305 that do not face the sensor unit 301 .

[0048] 4, in a plan view relative to the incident surface (upper surface of the substrate 305) of the radiation 121, the size of the semiconductor layer 402 may be the same as the size of the mounting substrate 407 and the size of the interposer 404. Alternatively, in a plan view relative to the incident surface (upper surface of the substrate 305) of the radiation 121, the size of the semiconductor layer 402 may be larger than the size of the mounting substrate 407 and the size of the interposer 404. This makes it easier to reduce the gap between two adjacent semiconductor layers 402.

[0049] 4, the mounting board 407 is located at the bottom of the sensor unit 301 (at the position closest to the frame 303). Therefore, the bottom surface of the mounting board 407 constitutes the bottom surface 408 of the sensor unit 301. The heat dissipation member 302 is located between the sensor unit 301 and the frame 303. The heat dissipation member 302 is in contact with the bottom surface 408 of the sensor unit 301 and the frame 303.

[0050] The function of the heat dissipation member 302 will be described. The thicknesses of the sensor units 301a to 301d (i.e., the distance between the upper and lower surfaces) vary due to manufacturing errors and the like. Therefore, if the sensor units 301a to 301d are directly attached to the flat surface of the frame 303, the height of the semiconductor layer 402 (e.g., the distance from the frame 303) may vary. Therefore, the heat dissipation member 302 may be a member having elasticity capable of absorbing the variation.

[0051] When one substrate 305 is used in common for multiple sensor modules 202, the substrate 305 may be curved to match the shape of the base 201. In this case, the lower surface of the substrate 305 may be a smoothly curved surface. The lower surface of the substrate 305 has a smooth surface in the portion that contacts the upper surface 401 of the multiple sensor units 301, and other portions may not be smooth (for example, may have an opening).

[0052] The substrate 305 may have a grid for reducing scattered radiation. The substrate 305 serves both the function of aligning the sensor unit 301 and the function of reducing scattered radiation, so that the number of components of the radiation detection device 104 can be reduced.

[0053] With reference to FIG. 5, a modified example of the configuration of the radiation detection device 104 in FIG. 4 will be described. The configuration in FIG. 5 differs from the configuration in FIG. 4 in the shape of the coupling member 410. Other points of the configuration in FIG. 5 may be the same as the configuration in FIG. 4. In the configuration in FIG. 5, the coupling member 410 is not filled between the semiconductor layer 402 and the interposer 404 of each sensor unit 301. The coupling member 410 is not filled between the interposer 404 and the mounting substrate 407 of each sensor unit 301. In addition, the upper surface of the substrate 305 and the side surface of the substrate 305 are not covered by the coupling member 410.

[0054] 5, two adjacent sensor units 301 in the array among the multiple sensor units 301 are coupled to each other by a coupling member 410. Specifically, two adjacent semiconductor layers 402, two adjacent interposers 404, and two adjacent mounting substrates 407 are coupled to each other by the coupling member 410.

[0055] With reference to FIG. 6, a modified example of the configuration of the radiation detection device 104 in FIG. 4 will be described. The configuration in FIG. 6 differs from the configuration in FIG. 4 in the shape of the coupling member 410. Other points of the configuration in FIG. 6 may be the same as the configuration in FIG. 4. In the configuration in FIG. 6, the coupling member 410 is not filled between the semiconductor layer 402 and the interposer 404 of each sensor unit 301. The coupling member 410 is not filled between the interposer 404 and the mounting substrate 407 of each sensor unit 301. In addition, the upper surface of the substrate 305 and the side surface of the substrate 305 are not covered by the coupling member 410.

[0056] 6, two adjacent sensor units 301 in the array among the multiple sensor units 301 are bonded to each other by the bonding member 410. Specifically, two adjacent semiconductor layers 402 are bonded to each other by the bonding member 410. Two adjacent interposers 404 and two adjacent mounting boards 407 are not bonded to each other by the bonding member 410. The bonding member 410 covers the side surface of the semiconductor layer 402 and at least a part of the lower surface of the semiconductor layer 402 in each sensor unit 301. The bonding member 410 does not contact the interposer 404 and the mounting board 407 in each sensor unit 301.

[0057] With reference to Fig. 7, a modified example of the configuration of the radiation detection device 104 in Fig. 4 will be described. The configuration in Fig. 7 differs from the configuration in Fig. 4 in that one sensor unit 301 has multiple semiconductor layers 402. Other points of the configuration in Fig. 7 may be the same as the configuration in Fig. 4. The configurations in Figs. 5 and 6 may be modified in the same way as in Fig. 7.

[0058] The multiple semiconductor layers 402 included in one sensor unit 301 are arranged to form an array. The multiple semiconductor layers 402 may form a one-dimensional array or a two-dimensional array. Furthermore, a three-dimensional array may be formed by stacking two or more semiconductor layers 402 in the vertical direction of the drawing. In the example of FIG. 7, two semiconductor layers 402 are lined up in one direction, but three or more semiconductor layers 402 may be lined up. One sensor module 202 may have only one sensor unit 301 having multiple semiconductor layers 402 in this way, or may have multiple sensor units 301 similar to the configurations of FIGS. 4 to 6.

[0059] 7, one interposer 404, one integrated circuit 406, and one mounting board 407 are arranged in common for a plurality of semiconductor layers 402 in one sensor unit 301. Alternatively, at least one of the interposer 404, the integrated circuit 406, and the mounting board 407 may be arranged in a plurality of numbers in one sensor unit 301. By arranging the interposer 404, the integrated circuit 406, and the mounting board 407 collectively for a plurality of semiconductor layers 402 in one sensor unit 301, the process of mounting them can be simplified. In addition, by consolidating cables (not shown) connecting the sensor unit 301 and the circuit board 304, the number of cables can be reduced and the cable layout can be made easier.

[0060] Among the multiple semiconductor layers 402, two adjacent semiconductor layers 402 in the array are bonded by a bonding member 410. Similar to the configuration in FIG. 4, the bonding member 410 is formed by deposition. The bonding member 410 covers the side surfaces of the semiconductor layers 402 and at least a part of the lower surface of the semiconductor layers 402. The bonding member 410 is not in contact with the interposer 404 and the mounting substrate 407.

[0061] With reference to FIG. 8, a modified example of the configuration of the radiation detection device 104 of FIG. 7 will be described. The configuration of FIG. 8 differs from that of FIG. 7 in the shape of the coupling member 410. Other points of the configuration of FIG. 8 may be the same as those of FIG. 7. In the configuration of FIG. 8, the coupling member 410 is disposed only between two adjacent semiconductor layers 402. Even in the configuration of FIG. 8, two adjacent sensor units 301 in the array among the multiple sensor units 301 are coupled to each other by the coupling member 410. Specifically, two adjacent semiconductor layers 402 are coupled to each other by the coupling member 410. The coupling member 410 covers a part of the side surface of the semiconductor layer 402. The coupling member 410 is not in contact with the lower surface of the semiconductor layer 402. The coupling member 410 is not in contact with the interposer 404 and the mounting board 407.

[0062] With reference to Fig. 9, a modified example of the configuration of the radiation detection device 104 in Fig. 4 will be described. The configuration in Fig. 9 differs from the configuration in Fig. 4 in that a heat dissipation member 302 is provided for each sensor unit 301. Other points of the configuration in Fig. 9 may be the same as the configuration in Fig. 4. The modification in Fig. 9 may be similarly applied to both the configurations in Figs. 5 and 6. A coupling member 410 covers the side surface of the heat dissipation member 302.

[0063] A method for manufacturing the radiation detection device 104 according to some embodiments will be described with reference to Figs. 10 to 12. First, a method for manufacturing the radiation detection device 104 according to Figs. 4 and 5 will be described with reference to Fig. 10. As shown in Fig. 10(a), a plurality of sensor units 301 are arranged in a chamber 1001 of a deposition device 1000. The sensor unit 301 may include the components described with reference to Fig. 4. The sensor unit 301 may be produced by an existing method, and therefore a detailed description of the production method will be omitted. The operation of the deposition device 1000 is controlled by a control computer 1010. Specifically, the processor of the control computer 1010 executes a program stored in a memory of the control computer 1010, thereby controlling the operation of the deposition device 1000.

[0064] The plurality of sensor units 301 are arranged on the temporary fixing member 1002 to form an array. The substrate 305 is arranged on the plurality of sensor units 301. The substrate 305 may be coupled to each of the plurality of sensor units 301. The plurality of sensor units 301 may be fixed to the temporary fixing member 1002. The temporary fixing member 1002 may be an adhesive sheet or an adsorption stage. Furthermore, the positions of the plurality of sensor units 301 relative to each other may be fixed by pressing the outer periphery of the plurality of sensor units 301 inward. By arranging the plurality of sensor units 301 on the temporary fixing member 1002, the positions of the lower surfaces of the plurality of sensor units 301 are unified. The temporary fixing member 1002 also functions as a mask in vapor deposition.

[0065] A container 1003 for storing a deposition material is also installed inside the chamber 1001. As shown in FIG. 10(b), the deposition material stored in the container 1003 is deposited on the sensor units 301 to form a bonding member 410. The deposition causes the sensor units 301 to be fixed to each other using the bonding member 410 to form an array. In the method of FIG. 10, the sensor units 301 are bonded to each other as unitary components using the bonding member 410. Specifically, the semiconductor layers 402, the interposers 404, and the mounting substrates 407 of two adjacent sensor units 301 in the array are bonded to each other. The deposition may be chemical deposition (e.g., chemical vapor deposition (CVD)) or physical deposition (e.g., physical vapor deposition (PVD)). The deposition may be performed at room temperature (e.g., a temperature in the range of 5° C. to 35° C.). By performing the deposition at room temperature, stress and distortion applied to the sensor units 301 can be suppressed. In this manner, the multiple unit components included in the radiation detection device 104 manufactured by the method of FIG. 10 are multiple sensor units 301, and the radiation detection device 104 includes multiple sensor modules 202 each including the multiple sensor units 301.

[0066] An example of a deposition material used for deposition will be described. The deposition material may include one or more of an organic material having insulating properties, such as parylene, polyethylene, polytetrafluoroethylene, polyimide, polyamide, polyurea, and polyurethane. Parylene, polyimide, polyamide, polyurea, and polyurethane may be used in a deposition polymerization method. Polyethylene and polytetrafluoroethylene may be used in a physical deposition method. The binding member 410 formed of such a material may have elasticity. The binding member 410 having elasticity may also function as a buffer material against heat and vibration of the multiple sensor units 301. Of these materials, for example, parylene can be used for deposition even when the adherend is at room temperature.

[0067] The deposition material may include one or more of inorganic materials having insulating properties, such as silicon oxide (SiO2), aluminum oxide (Al2O3), and silicon nitride (SiN). These materials may be used in sputter deposition. The binding member 410 formed of such a material may have rigidity.

[0068] The deposition material may include one or more of insulating organic materials such as TEOS (Rational formula: Si(OC2H5)4), TMB (Rational formula: B(OCH3)3), TEB (Rational formula: B(OC2H5)3), TMP (Rational formula: P(OCH3)3), TMOP (Rational formula: PO(OCH3)3), TEOP (Rational formula: PO(OC2H5)3), TriMS (Rational formula: SiH(CH3)3), and MTMS (Rational formula: CH3Si(OCH3)3). These materials may be used in chemical vapor deposition.

[0069] 10(b), the multiple sensor units 301 and the substrate 305 joined to each other by the joining member 410 are detached from the temporary fixing member 1002 and taken out from the chamber 1001 of the deposition apparatus 1000. Then, the multiple sensor units 301 fixed to each other are attached to a frame 303 via a heat dissipation member 302. In this way, the sensor module 202 is produced. Then, the multiple sensor modules 202 are attached to the base 201, thereby manufacturing the radiation detection device 104 shown in FIG. 4.

[0070] In the method of FIG. 10, the substrate 305 is attached to the plurality of sensor units 301 before deposition. Alternatively, the substrate 305 may be attached to the plurality of sensor units 301 after deposition (i.e., after the bonding member 410 is formed). In this way, the radiation detection device 104 shown in FIG. 5 is manufactured. When deposition is performed before the substrate 305 is attached to the plurality of sensor units 301, the upper surface of each sensor unit 301 is covered with the bonding member 410. Before the substrate 305 is attached to the plurality of sensor units 301, a portion of the bonding member 410 that covers the upper surface of each sensor unit 301 may be removed. This removal may be performed by peeling off a portion of the bonding member 410, physical polishing, chemical polishing, or the like. Alternatively, the upper surface of each sensor unit 301 may be covered with a mask member before deposition, and after deposition, the mask member and a portion of the bonding member 410 may be removed.

[0071] Next, a manufacturing method of the radiation detection device 104 according to Fig. 6 to Fig. 8 will be described with reference to Fig. 11. Duplicate description of contents that may be the same as the manufacturing method of Fig. 10 will be omitted. As shown in Fig. 11(a), a plurality of semiconductor layers 402 are placed in a chamber 1001 of a deposition device 1000.

[0072] The multiple semiconductor layers 402 are arranged on the temporary fixing member 1002 to form an array. The multiple semiconductor layers 402 may be fixed to the temporary fixing member 1002. The outer peripheries of the multiple semiconductor layers 402 may be pressed inward to fix the relative positions of the multiple semiconductor layers 402. By arranging the multiple semiconductor layers 402 on the temporary fixing member 1002, the positions of the lower surfaces of the multiple semiconductor layers 402 are unified. The temporary fixing member 1002 also functions as a mask in vapor deposition.

[0073] A container 1003 for storing a deposition material is also installed inside the chamber 1001. As shown in FIG. 11(b), the deposition material stored in the container 1003 is deposited on the semiconductor layers 402 to form a bonding member 410. Through this deposition, the semiconductor layers 402 are fixed to each other using the bonding member 410 to form an array. In the method of FIG. 11, the semiconductor layers 402 are bonded to each other as unitary structures by the bonding member 410. Specifically, two adjacent semiconductor layers 402 in the array are bonded to each other. The deposition material may be the same as the material used in the manufacturing method of FIG. 10.

[0074] After the step of FIG. 11(b), the semiconductor layers 402 bonded to each other by the bonding member 410 are detached from the temporary fixing member 1002 and taken out of the chamber 1001 of the deposition apparatus 1000. Thereafter, the semiconductor layers 402 fixed to each other are bonded to the substrate 305. Before bonding the semiconductor layers 402 to the substrate 305, a portion of the bonding member 410 covering the upper surface of each semiconductor layer 402 may be removed. This removal may be performed by peeling off a portion of the bonding member 410, physical polishing, chemical polishing, or the like. Alternatively, the upper surface of each semiconductor layer 402 may be covered with a mask member before deposition, and the mask member and a portion of the bonding member 410 may be removed after deposition.

[0075] Thereafter, the interposer 404 and the mounting substrate 407 are formed. The interposer 404 and the mounting substrate 407 may be formed before bonding the plurality of semiconductor layers 402 to the substrate 305. As shown in FIG. 6, the interposer 404 and the mounting substrate 407 may be formed for each semiconductor layer 402. In this way, a plurality of sensor units 301 are formed. Alternatively, as shown in FIG. 7 and FIG. 8, the interposer 404 and the mounting substrate 407 may be formed in common for the plurality of semiconductor layers 402. In this way, one sensor unit 301 is formed. Then, one or a plurality of sensor units 301 thus formed are attached to the frame 303 via the heat dissipation member 302. In this way, the sensor module 202 is generated. Then, the plurality of sensor modules 202 are attached to the base 201, thereby manufacturing the radiation detection device 104 shown in FIG. 6 to FIG. 8.

[0076] 11, after deposition, the substrate 305 is attached to the plurality of semiconductor layers 402. Alternatively, the substrate 305 may be attached to the plurality of semiconductor layers 402 before deposition (i.e., before forming the coupling members 410).

[0077] With reference to Fig. 12, a modified example of the manufacturing method of Fig. 11 will be described. The modified example of Fig. 12 may be applied to the manufacturing method of Fig. 10. In the modified example of Fig. 12(a), a conductive layer 1201 is formed on the upper surface of each semiconductor layer 402 before deposition. Then, the multiple semiconductor layers 402 and the multiple conductive layers 1201 are bonded to each other by a bonding member 410.

[0078] 12(b), before deposition, the upper surface of each semiconductor layer 402 is covered with a mask member 1202. Then, the semiconductor layers 402 are bonded to each other by a bonding member 410. Then, the bonding member 410 is removed from the upper surface of each semiconductor layer 402 by removing the mask member 1202 from the upper surface of each semiconductor layer 402.

[0079] In the variation of Fig. 12(c), before deposition, a conductive layer 1201 is formed on the upper surface of each semiconductor layer 402. Furthermore, a part of the upper surface of the conductive layer 1201 is covered with a mask member 1202. Thereafter, the multiple semiconductor layers 402 are bonded to each other by a bonding member 410. Thereafter, a part of the upper surface of the conductive layer 1201 is exposed by removing the mask member 1202 from the upper surface of each conductive layer 1201. This part may be used to lead out an electrode.

[0080] Next, another configuration example of the sensor unit 301 will be described with reference to the cross-sectional view of FIG. 13. A duplicated description of a configuration that may be the same as that of FIG. 4 will be omitted. The upper surface 401 of the sensor unit 301 (the upper surface of the semiconductor layer 402 in the example of FIG. 13) and the lower surface of the substrate 305 (the lower surface of the conductive layer 412 in the example of FIG. 13) may be in contact with each other. The upper surface 401 of the sensor unit 301 and the lower surface of the substrate 305 may or may not be bonded to each other at the contact surface. When the upper surface 401 of the sensor unit 301 and the lower surface of the substrate 305 are bonded to each other, as described later, this bonding may be realized by solid-state bonding. In this case, the sensor unit 301 (the semiconductor layer 402 in the example of FIG. 13) and the substrate 305 (the conductive layer 412 in the example of FIG. 13) are bonded by the cohesive force between atoms.

[0081] By bringing each of the sensor units 301 into contact with the substrate 305 provided in common to the sensor units 301, the variation in height of the upper surface 401 of the sensor units 301 can be suppressed. In addition, by bonding each of the sensor units 301 to the substrate 305 provided in common to the sensor units 301, it becomes easier to maintain a state in which the variation in height of the upper surface 401 of the sensor units 301 is suppressed. The height of the upper surface 401 may be based on the lower surface of the substrate 305. If there is variation in the height of the upper surface 401, for example, radiation heading obliquely toward one sensor unit 301 may be detected by another sensor unit 301. By suppressing the variation in the height of the upper surface 401 of the sensor units 301, it becomes possible to detect radiation with high accuracy, and the image quality of the radiation image is improved.

[0082] Among the plurality of sensor units 301, two adjacent sensor units 301 in the array may be in contact with each other. For example, the semiconductor layers 402 of two adjacent sensor units 301 may be in contact with each other. The interposers 404 of two adjacent sensor units 301 may be in contact with each other. The mounting substrates 407 of two adjacent sensor units 301 may be in contact with each other. In the example of FIG. 13, all of these three members are in contact, but instead, only some of these three members may be in contact with each other. The two adjacent sensor units 301 may or may not be bonded to each other at the contact surface. When the two adjacent sensor units 301 are bonded to each other, this bonding may be realized by solid-state bonding, as described later. In this case, the two adjacent sensor units 301 are bonded to each other by the cohesive force between atoms.

[0083] By bringing two adjacent sensor units 301 into contact with each other, the gap between these sensor units 301 can be reduced. Furthermore, by joining two adjacent sensor units 301 to each other, it becomes easier to maintain a state in which the gap between these sensor units 301 is reduced. If the gap between two adjacent sensor units 301 is large, the gap between the adjacent semiconductor layers 402 also becomes large, and the amount of radiation that cannot be detected increases. By reducing the gap between two adjacent sensor units 301 as in the configuration of FIG. 13, it becomes possible to detect radiation with high accuracy, and the image quality of the radiation image is improved.

[0084] The conductive layer 412 may be used to apply a voltage to the semiconductor layer 402. When used in this manner, the conductive layer 412 may be in contact with, and in particular bonded to, the semiconductor layer 402. When the conductive layer 412 and the semiconductor layer 402 are bonded to each other by solid-state bonding (e.g., room-temperature bonding), the electrical resistance of the current path between the conductive layer 412 and the semiconductor layer 402 is reduced compared to when they are bonded using a conductive adhesive.

[0085] With reference to Fig. 14, a modified example of the configuration of the radiation detection device 104 in Fig. 13 will be described. The configuration in Fig. 14 differs from the configuration in Fig. 13 in that an insulating layer 1401 is further provided between two adjacent sensor units 301. Other points of the configuration in Fig. 14 may be the same as the configuration in Fig. 13.

[0086] As shown in FIG. 14, the insulating layer 1401 may be disposed between the semiconductor layers 402 of two adjacent sensor units 301. Alternatively or in addition, the insulating layer 1401 may be disposed between the interposers 404 of two adjacent sensor units 301. Alternatively or in addition, the insulating layer 1401 may be disposed between the mounting substrates 407 of two adjacent sensor units 301. In the configuration of FIG. 14, the insulating layer 1401 may have a thickness such that the distance between the two adjacent semiconductor layers 402 (i.e., the distance between the side surfaces) is equal to or less than the pitch of the pixels formed in the sensor unit 301. The insulating layer 1401 may suppress the semiconductor layer 402 of one sensor unit 301 from being electrically short-circuited with the semiconductor layer 402 of another sensor unit 301.

[0087] The sensor unit 301 (semiconductor layer 402 in the example of FIG. 14) and the insulating layer 1401 may be in contact with each other. The sensor unit 301 and the insulating layer 1401 may or may not be bonded to each other at the contact surface. When the sensor unit 301 and the insulating layer 1401 are bonded to each other, this bonding may be realized by solid-state bonding, as described later. In this case, the sensor unit 301 and the insulating layer 1401 are bonded by the cohesive force between atoms. As shown in FIG. 14, the insulating layer 1401 may cover the entire side surface of the semiconductor layer 402. Alternatively, the insulating layer 1401 may cover only a part of the side surface of the semiconductor layer 402.

[0088] 14 is described assuming that the insulating layer 1401 is not included in the sensor unit 301. Alternatively, each of the multiple sensor units 301 may have an insulating layer, and the insulating layers of two adjacent sensor units 301 may be in contact with each other. The insulating layers may or may not be bonded to each other at the contact surface. When the insulating layers are bonded to each other, this bonding may be achieved by solid-state bonding, as described below.

[0089] With reference to Fig. 15, a modified example of the configuration of the radiation detection device 104 in Fig. 13 will be described. The configuration in Fig. 15 differs from the configuration in Fig. 13 in that one sensor unit 301 has multiple semiconductor layers 402. Other points of the configuration in Fig. 15 may be the same as the configuration in Fig. 13.

[0090] The multiple semiconductor layers 402 included in one sensor unit 301 are arranged to form an array. The multiple semiconductor layers 402 may form a one-dimensional array or a two-dimensional array. Furthermore, a three-dimensional array may be formed by stacking two or more semiconductor layers 402 in the vertical direction of the drawing. In the example of FIG. 15, two semiconductor layers 402 are lined up in one direction, but three or more semiconductor layers 402 may be lined up. One sensor module 202 may have only one sensor unit 301 having multiple semiconductor layers 402 in this way, or may have multiple sensor units 301 similar to the configurations of FIGS. 13 and 14.

[0091] 15, one interposer 404, one integrated circuit 406, and one mounting board 407 are arranged in common to the multiple semiconductor layers 402 in one sensor unit 301. Alternatively, at least one of the interposer 404, the integrated circuit 406, and the mounting board 407 may be arranged in multiple numbers in one sensor unit 301. By arranging the interposer 404, the integrated circuit 406, and the mounting board 407 collectively for the multiple semiconductor layers 402 in one sensor unit 301, the process of mounting them can be simplified. In addition, by consolidating the cables (not shown) connecting the sensor unit 301 and the circuit board 304, the number of cables can be reduced and the cable management can be facilitated.

[0092] Among the plurality of semiconductor layers 402, two adjacent semiconductor layers 402 in the array may contact each other. The two adjacent semiconductor layers 402 may or may not be bonded to each other at the contact surface. When the two adjacent semiconductor layers 402 are bonded to each other, this bonding may be achieved by solid-state bonding, as described below. In this case, the two adjacent semiconductor layers 402 are bonded to each other by cohesive forces between atoms.

[0093] In the configuration of Fig. 15, two adjacent semiconductor layers 402 are in contact with each other. Alternatively, similar to the configuration of Fig. 14, the radiation detection device 104 may have an insulating layer between two adjacent semiconductor layers 402. Each of the two adjacent semiconductor layers 402 and the insulating layer may be in contact with each other, or may be bonded to each other. This bonding may be achieved by solid-state bonding.

[0094] 16 to 17, a method for manufacturing the radiation detection device 104 according to some embodiments will be described. As will be described later, solid-state bonding is used in the method for manufacturing the radiation detection device 104. First, the solid-state bonding will be described with reference to FIGS. 16 and 17.

[0095] Solid-state bonding is a technique for bonding two components together in a solid state (i.e., without melting and while still solid) by applying pressure or by applying pressure while heating. Other techniques for solid-state bonding include fusion bonding (arc welding, laser welding, resistance welding) and liquid-solid reaction bonding (brazing, liquid-phase diffusion bonding, thermal spraying, adhesion). Compared to these other techniques, solid-state bonding has the advantages that the components themselves do not become hot and melt, there is little residual stress due to the difference in thermal expansion coefficient between the components and the bonding material (brazing material, thermal spraying material, adhesive, etc.), and the crystal state is less likely to change or become embrittled due to high temperatures. In particular, compared to commonly used bonding using adhesives, solid-state bonding can bond components with a very narrow gap between them because no adhesive is used between them.

[0096] Solid-state bonding is performed by diffusing and rearranging the atoms of two components. Solid-state bonding can include two techniques. One is a technique in which two components are brought into contact with each other to bond them, and the other is a technique in which two components are bonded using a metal intermediate film. Both techniques promote the movement of atoms at the bonding interface to generate chemical bonds (metallic bonds in the case of metal materials). In particular, metals are bonded in a solid state (below the melting point of the components) by the action of cohesive forces between metal atoms when the metals are brought close to each other. Methods of solid-state bonding include room temperature bonding, solid-state diffusion bonding, reaction diffusion bonding, hot pressure welding, cold pressure welding, and ultrasonic pressure welding. In the following, a case in which room temperature bonding is used as an example of solid-state bonding will be described. Room temperature bonding is solid-state bonding performed at room temperature (for example, in the range of 5°C to 35°C). Alternatively, a method other than room temperature bonding may be used in solid-state bonding.

[0097] A method of joining two members by contacting them will be described with reference to Fig. 16. As shown in Fig. 16(a), two members 701 and 702 to be joined are prepared. The two members 701 and 702 may be made of the same material or different materials. In this example, a surface 701a of the member 701 and a surface 702a of the member 702 are joined.

[0098] First, each of the surface 701a and the surface 702b is subjected to a surface treatment. The surface treatment for the surface 701a will be described below, but the same treatment may be performed for the surface 702b. The surface treatment may include polishing the surface 701a. In this polishing, the surface 701a may be polished until the surface roughness of the surface 701a becomes Rmax 10 nm or less. The polishing may be performed using CMP (Chemical Mechanical Polishing) or the like. The smaller the surface roughness of the surface 701a, the lower the contact pressure during bonding and the higher the bonding strength. If the surface roughness of the surface 701a is small enough to be bonded at room temperature before the surface treatment, the polishing of the surface 701a may not be performed. Furthermore, the surface treatment may include cleaning the inactive layer of the surface 701a with an argon (Ar) beam or the like to activate the surface 701a. The activation of the surface 701a may be performed after the polishing of the surface 701a.

[0099] 16(b), the surfaces 701a and 702b are brought into contact with each other. This causes a cohesive force to act between atoms contained in the member 701 and atoms contained in the member 702 at a boundary 703 between the members 701 and 702. As a result, the members 701 and 702 are bonded to each other. In order to suppress recontamination of the activated surface, the contact between the surfaces 701a and 702b may be performed under high vacuum.

[0100] In the solid-state bonding, the entire portion where the surface 701a and the surface 702b contact each other may be bonded. Alternatively, in the solid-state bonding, only a portion where the surface 701a and the surface 702b contact each other may be bonded, and the other portion may not be bonded. The portion that is not bonded may be in a state before the member 701 and the member 702 are bonded.

[0101] A method of bonding two members using a metal intermediate film will be described with reference to Fig. 17. As shown in Fig. 17(a), two members 1701 and 1702 to be bonded are prepared. The two members 1701 and 1702 may be made of the same material or different materials. In this example, a surface 1701a of the member 1701 and a surface 1702a of the member 1702 are bonded to each other.

[0102] First, each of the surfaces 1701a and 1702b is subjected to a surface treatment. The surface treatment for the surface 1701a will be described below, but a similar treatment may be performed for the surface 1702b. The surface treatment may include polishing the surface 1701a. This polishing may be the same as the polishing described with reference to FIG. 16(a).

[0103] 17(b), a metal intermediate film 1703 made of gold (Au), silicon (Si), or the like is formed on surface 1701a in a vacuum. Prior to forming the metal intermediate film 1703, in order to improve the adhesion of the metal intermediate film 1703, another underlayer made of, for example, titanium (Ti) may be formed on surface 1701a.

[0104] Thereafter, as shown in FIG. 17(c), the metal intermediate film 1703 and the metal intermediate film 1704 are brought into contact with each other. As a result, at the boundary 1705 between the metal intermediate film 1703 and the metal intermediate film 1704, a cohesive force acts between the atoms contained in the metal intermediate film 1703 and the atoms contained in the metal intermediate film 1704. As a result, the member 1701 and the member 1702 are bonded to each other. In order to suppress recontamination of the activated surface, the contact between the surface 1701a and the surface 1702b may be performed under high vacuum. The contact between the surface 1701a and the surface 1702b may be performed at low pressure. For example, the contact between the surface 1701a and the surface 1702b may be performed at a pressure at which the plastic deformation amount of the members 1701 and 1702 is 10% or less.

[0105] A manufacturing method of the radiation detection device 104 according to some embodiments will be described with reference to Fig. 18. As shown in Fig. 18(a), a substrate 305 and a plurality of sensor units 301 are prepared. The substrate 305 and the sensor units 301 may include the components described with reference to Fig. 13. The substrate 305 and the sensor units 301 may be produced by an existing method, and therefore a detailed description of the production method will be omitted.

[0106] Thereafter, each of the plurality of sensor units 301 and the substrate 305 are bonded to each other by solid-state bonding, thereby fixing the plurality of sensor units 301 to each other to form an array. As described above, the solid-state bonding may be room temperature bonding. The same applies to the solid-state bonding described below with reference to Figs. 18 to 21. In the method of Fig. 18, the sensor unit 301 is bonded to the substrate 305 as a unit configuration. In this way, the plurality of unit configurations included in the radiation detection device 104 manufactured by the method of Fig. 18 are the plurality of sensor units 301, and the radiation detection device 104 includes a plurality of sensor modules 202 each including a plurality of sensor units 301. The same applies to the radiation detection device 104 manufactured by the method of Fig. 19 below.

[0107] The substrate 305 is provided in common to the multiple sensor units 301. The substrate 305 includes a conductive layer 412 bonded to the multiple sensor units 301, and an insulating layer 411 located on the opposite side of the multiple sensor units 301 with respect to the conductive layer 412. Alternatively, the substrate 305 may have another configuration, and may not include the conductive layer 412, for example.

[0108] 18, the sensor unit 301 has a semiconductor layer 402 at its uppermost portion. Therefore, the semiconductor layer 402 of each of the multiple sensor units 301 and the substrate 305 are bonded to each other by solid-state bonding. Alternatively, when the sensor unit 301 includes a member other than the semiconductor layer 402 at its uppermost portion, this member and the substrate 305 are bonded to each other by solid-state bonding.

[0109] In order to suppress stress generated in the sensor unit 301, the solid-state bonding between the multiple sensor units 301 and the substrate 305 may be performed at a low pressure. For example, the solid-state bonding may be performed at a pressure at which the amount of plastic deformation of the semiconductor layer 402 of the sensor unit 301 is 10% or less.

[0110] Two adjacent sensor units 301 among the plurality of sensor units 301 may be in contact with each other, may not be in contact with each other, may be bonded with each other, or may not be bonded with each other. Two adjacent sensor units 301 among the plurality of sensor units 301 may be bonded with each other by solid-state bonding, or may be bonded with each other by a method other than solid-state bonding.

[0111] 18(b), the multiple sensor units 301 fixed to each other are attached to a frame 303 via a heat dissipation member 302. This produces a sensor module 202. Thereafter, the multiple sensor modules 202 are attached to a base 201 to manufacture a radiation detection device 104.

[0112] A manufacturing method of a radiation detection device 104 according to another embodiment will be described with reference to Fig. 19. As shown in Fig. 19(a), a plurality of sensor units 301 are prepared. The sensor unit 301 may include the components described with reference to Fig. 13. The sensor unit 301 may be produced by an existing method, and therefore a detailed description of the production method will be omitted.

[0113] Thereafter, two adjacent sensor units 301 in the array are bonded to each other by solid-state bonding, thereby fixing the sensor units 301 together to form an array. In the method of FIG. 19, the sensor units 301 are bonded to a substrate 305 as unitary structures.

[0114] In bonding the sensor units 301 together, the semiconductor layers 402 of two adjacent sensor units 301 may be bonded together by solid-state bonding. Alternatively or in addition, the interposers 404 of two adjacent sensor units 301 may be bonded together by solid-state bonding. Alternatively or in addition, the mounting substrates 407 of two adjacent sensor units 301 may be bonded together by solid-state bonding.

[0115] The solid-state bonding of two adjacent sensor units may be performed at a low pressure in order to suppress stress generated in the sensor unit 301. For example, the solid-state bonding may be performed at a pressure at which the amount of plastic deformation of the semiconductor layer 402 of the sensor unit 301 is 10% or less.

[0116] Thereafter, as shown in FIG. 19(b), a substrate 305 is prepared. The substrate 305 may include the components described with reference to FIG. 13. The substrate 305 may be produced by an existing method, and therefore a detailed production method will be omitted. Thereafter, the substrate 305 and the plurality of sensor units 301 are bonded to each other. This bonding may be performed by solid-state bonding, or may be performed by a method other than solid-state bonding (such as melt bonding or liquid-solid reaction bonding). In the method of FIG. 19, since the plurality of sensor units 301 are bonded to each other in the step of FIG. 19(a), the substrate 305 and the plurality of sensor units 301 may not be bonded to each other but may simply be in contact with each other. Alternatively, the radiation detection device 104 may not include the substrate 305. Thereafter, the radiation detection device 104 is manufactured by performing the steps described above with reference to FIG. 18(b).

[0117] A method for manufacturing a radiation detection device 104 according to another embodiment will be described with reference to FIG. 20(a). Differences from the manufacturing method described with reference to FIG. 19 will be described below. In the manufacturing method of FIG. 20(a), each of the multiple sensor units 301 has an insulating layer 2001. The insulating layer 2001 covers at least a part of the side surface of the semiconductor layer 402. The insulating layer 2001 may be bonded to the semiconductor layer 402 by solid-state bonding, or may be formed on the semiconductor layer 402 by other methods (e.g., sputtering). Thereafter, in bonding the sensor units 301 to each other, the insulating layers 2001 of the two adjacent sensor units 301 may be bonded to each other by solid-state bonding. The insulating layer 2001 may be formed of, for example, silicon dioxide. In the manufacturing method of FIG. 20(a), other members may be used instead of the insulating layer 2001.

[0118] A method for manufacturing a radiation detection device 104 according to another embodiment will be described with reference to FIG. 20(b). The differences from the manufacturing method described with reference to FIG. 19 will be described below. In the manufacturing method of FIG. 20(b), the same sensor unit 301 as that of FIG. 19 may be prepared. Then, each of the two adjacent sensor units 301 and the insulating layer 2002 disposed between the two adjacent sensor units 301 are bonded to each other by solid-state bonding. In the example of FIG. 20(b), the insulating layer 2002 is disposed between the semiconductor layers 402 of the two adjacent sensor units 301. Therefore, the semiconductor layers 402 of the two adjacent sensor units 301 and the insulating layer 2002 are bonded to each other by solid-state bonding. Alternatively or in addition to this, an insulating layer may be disposed between the interposers 404 of the two adjacent sensor units 301. Alternatively or in addition to this, an insulating layer may be disposed between the mounting substrates 407 of the two adjacent sensor units 301. The insulating layer 2002 may be formed of, for example, silicon dioxide. In the manufacturing method of Fig. 20(b), other members may be used instead of the insulating layer 2002. In the manufacturing method of Fig. 20(b), the interposers 404 of two adjacent sensor units 301 may be joined to each other by solid-state welding. Alternatively or in addition to this, the mounting substrates 407 of two adjacent sensor units 301 may be joined to each other by solid-state welding.

[0119] A manufacturing method of a radiation detection device 104 according to another embodiment will be described with reference to Fig. 21. As shown in Fig. 21(a), a substrate 305 and a semiconductor layer 402 are prepared. The substrate 305 may include the components described with reference to Fig. 13. The substrate 305 and the semiconductor layer 402 may be produced by an existing method, and therefore detailed production methods will be omitted.

[0120] Thereafter, the plurality of semiconductor layers 402 are fixed together to form an array by bonding each of the plurality of semiconductor layers 402 to the substrate 305 by solid-state bonding. In the method of FIG. 21, the semiconductor layer 402 is bonded to the substrate 305 as a unitary structure.

[0121] The substrate 305 is provided in common to the multiple semiconductor layers 402. The substrate 305 includes a conductive layer 412 bonded to the multiple semiconductor layers 402, and an insulating layer 411 located on the opposite side of the multiple semiconductor layers 402 with respect to the conductive layer 412. Alternatively, the substrate 305 may have another configuration, and may not include the conductive layer 412, for example.

[0122] In order to suppress stress generated in the semiconductor layers 402, the solid-state bonding between the semiconductor layers 402 and the substrate 305 may be performed at a low pressure. For example, the solid-state bonding may be performed at a pressure at which the amount of plastic deformation of the semiconductor layers 402 is 10% or less.

[0123] Two adjacent semiconductor layers 402 among the plurality of semiconductor layers 402 may be in contact with each other, may not be in contact with each other, may be bonded with each other, or may not be bonded with each other. Two adjacent semiconductor layers 402 among the plurality of semiconductor layers 402 may be bonded with each other by solid-state bonding, or may be bonded with a method other than solid-state bonding.

[0124] Thereafter, the remaining components of the sensor unit 301 are produced as shown in Fig. 21(b) After that, the radiation detection device 104 is manufactured by carrying out the steps described above with reference to Fig. 18(b).

[0125] In the above-mentioned step of FIG. 21(a), two adjacent semiconductor layers 402 in the array may be bonded to each other by solid-state bonding to fix the multiple semiconductor layers 402 to each other to form an array, and then the multiple semiconductor layers 402 may be bonded to the substrate 305. The bonding between the multiple semiconductor layers 402 and the substrate 305 may be performed by solid-state bonding, or may be performed by a method other than solid-state bonding (such as melt bonding or liquid-solid reaction bonding). In this modification, since the multiple semiconductor layers 402 are bonded to each other, the substrate 305 and the multiple semiconductor layers 402 may simply be in contact with each other without being bonded to each other. Alternatively, the radiation detection device 104 may not include the substrate 305.

[0126] In the step of FIG. 21(a) or the above-described modified example, instead of bonding two adjacent semiconductor layers 402 to each other, an insulating layer may be disposed between the two adjacent semiconductor layers 402. As described above with reference to FIG. 20(a), after forming an insulating layer so as to cover at least a part of the side surface of each semiconductor layer 402, these insulating layers may be bonded to each other by solid-state bonding. Alternatively, as described above with reference to FIG. 20(b), each of the two adjacent semiconductor layers 402 and the insulating layer disposed between the two adjacent semiconductor layers 402 may be bonded to each other by solid-state bonding.

[0127] In the above-described embodiment, the radiation detection device 104 is described in the context of the CT device 100. Alternatively, the radiation detection device 104 may be used in other devices, such as a fluoroscopic diagnostic device or an article inspection device. In the above-described embodiment, the radiation detection device 104 that detects radiation has been described. However, the embodiment is not limited to this, and the above-described embodiment can be applied to a radiation detector that detects gamma rays, particle radiation, or the like. The above-described embodiment can also be applied to a radiation diagnostic device equipped with the radiation detection device 104, in addition to the CT device 100. In such a case, the radiation diagnostic device includes, for example, a PET (Positron Emission Tomography) device, a SPECT (Single Photon Emission Computed Tomography) device, or the like.

[0128] With reference to FIG. 22, a modified example of the radiation detection device 104 described above will be described. The radiation detection device 104 described above has an arc-shaped shape. Alternatively, the radiation detection device 104 may have a planar shape as shown in each of the views of FIG. 22. For ease of viewing, each of the views of FIG. 22 shows only a sensor unit 301, a frame 303, and a circuit board 304. In FIG. 22(a), a plurality of sensor units 301 are arranged to form a 6×6 two-dimensional array. One frame 303 and one circuit board 304 are commonly arranged for these plurality of sensor units 301. In FIG. 22(b), a plurality of sensor units 301 are arranged to form a 6×2 two-dimensional array. In FIG. 22(c), a plurality of sensor units 301 are arranged to form a 6×1 one-dimensional array. In FIG. 22(d), one sensor unit 301 is arranged. In this case, the sensor unit 301 may include a plurality of semiconductor layers 402 arranged to form an array, as described above with reference to FIG. 6.

[0129] <Other embodiments> The present invention can also be realized by a process in which a program for implementing one or more of the functions of the above-described embodiments is supplied to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. The present invention can also be realized by a circuit (e.g., ASIC) that implements one or more of the functions.

[0130] <Summary of the embodiment> [Item 1] 1. A radiation detection device, comprising: A plurality of unit structures each having a semiconductor layer that converts radiation into an electric charge and arranged to form an array; a connecting member that connects two adjacent unit structures to each other in the array, A radiation detection device, wherein the coupling member is formed of a material that can be used as a deposition material. [Item 2] Item 2. The radiation detection device of item 1, wherein the coupling member comprises parylene. [Item 3] 2. The radiation detection device of claim 1, wherein the bonding member comprises one or more of silicon oxide, aluminum oxide, and silicon nitride. [Item 4] 4. The radiation detection device according to any one of claims 1 to 3, wherein the bonding member bonds the semiconductor layers of two adjacent unit structures in the array. [Item 5] Each of the plurality of unit structures is a mounting substrate on which a circuit for processing a signal based on the charge obtained in the semiconductor layer is mounted; 5. The radiation detection device according to any one of claims 1 to 4, further comprising an interposer located between the semiconductor layer and the mounting substrate. [Item 6] 6. The radiation detection device according to item 5, wherein, in a plan view with respect to a radiation incident surface, a size of the semiconductor layer is larger than a size of the mounting substrate and a size of the interposer. [Item 7] 7. The radiation detection device according to any one of claims 1 to 6, wherein the bonding member covers a side surface of the semiconductor layer and at least a portion of a lower surface of the semiconductor layer. [Item 8] The radiation detection device according to any one of items 1, 2, and 4 to 7, wherein the coupling member has elasticity. [Item 9] the plurality of unit structures are a plurality of sensor units, 9. The radiation detection device according to any one of claims 1 to 8, comprising a plurality of sensor modules each including the plurality of sensor units. [Item 10] A radiation detection device according to any one of items 1 to 9, a radiation generating unit that irradiates radiation toward the radiation detection device; a signal processing unit that processes a signal output from the radiation detection device; A CT device comprising: [Item 11] the radiation detection device is a photon counting type radiation detection device, Item 11. The CT apparatus according to item 10, wherein the signal processing unit generates image data using a count result of radiation photons derived from radiation transmitted through a subject. [Item 12] A radiation detection device according to any one of items 1 to 9, a radiation generating unit that irradiates radiation toward the radiation detection device; a signal processing unit that processes a signal output from the radiation detection device; A radiation diagnostic apparatus comprising: [Item 13] A method for manufacturing a radiation detection device, comprising: A fixing step of fixing a plurality of unit structures each having a semiconductor layer for converting radiation into an electric charge to each other by using a bonding member so as to form an array, The method, wherein the fixing step includes forming the coupling member by vapor deposition. [Item 14] Item 14. The manufacturing method according to item 13, wherein the bonding member bonds the semiconductor layer of two adjacent unit structures in the array. [Item 15] Each of the plurality of unit structures is a mounting substrate on which a circuit for processing a signal based on the charge obtained in the semiconductor layer is mounted; an interposer located between the semiconductor layer and the mounting substrate, the coupling member further couples the mounting substrates of two adjacent unit structures in the array together, Item 15. The manufacturing method according to item 14, wherein the connecting member further connects the interposers of two adjacent unit structures in the array. [Item 16] Item 15. The manufacturing method according to item 13 or 14, further comprising the step of forming, after the fixing step, a mounting substrate on which a circuit for processing a signal based on the charge obtained in the semiconductor layer is mounted, and an interposer located between the semiconductor layer and the mounting substrate. [Item 17] 17. The manufacturing method according to any one of items 13 to 16, further comprising a step of bonding the multiple unit structures fixed to each other to a substrate after the fixing step. [Item 18] 18. The method of any one of claims 13 to 17, wherein the bonding member comprises one or more of parylene, polyethylene, polytetrafluoroethylene, polyimide, polyamide, polyurea, and polyurethane. [Item 19] 18. The manufacturing method according to any one of items 13 to 17, wherein the bonding member includes one or more of silicon oxide, aluminum oxide, and silicon nitride. [Item 20] 18. The method of any one of claims 13 to 17, wherein the binding member comprises one or more of TEOS, TMB, TEB, TMP, TMOP, TEOP, TriMS, and MTMS. [Item 21] A program for causing a computer of a deposition apparatus to execute each step of the manufacturing method according to any one of items 13 to 20. [Item 22] 1. A radiation detection device, comprising: The present invention relates to a semiconductor layer that converts radiation into electric charges, and the semiconductor layer is arranged to form an array of unit structures. between each of the plurality of unit structures and a substrate provided in common to the plurality of unit structures; Between two adjacent unit structures in the array; Between each of two adjacent unit structures in the array and a member disposed between the two adjacent unit structures; In at least one of the above, the two members constituting the boundary are joined by solid-state welding. [Item 23] 23. The radiation detection device of claim 22, further comprising an insulating layer between the semiconductor layers of two adjacent unit structures in the array. [Item 24] The substrate is A conductive layer bonded to the plurality of unit structures; 24. The radiation detection device according to claim 22 or 23, further comprising: an insulating layer located on the opposite side of the plurality of unit structures with respect to the conductive layer. [Item 25] 1. A radiation detection device, comprising: The present invention relates to a semiconductor layer that converts radiation into electric charges, and the semiconductor layer is arranged to form an array of unit structures. between each of the plurality of unit structures and a substrate provided in common to the plurality of unit structures; Between two adjacent unit structures in the array; Between each of two adjacent unit structures in the array and a member disposed between the two adjacent unit structures; In at least one of the above, the two members constituting the boundary are joined by cohesive forces between atoms. [Item 26] the plurality of unit structures are a plurality of sensor units, 26. The radiation detection device according to any one of claims 22 to 25, comprising a plurality of sensor modules each including the plurality of sensor units. [Item 27] A radiation detection device according to any one of items 22 to 26, a radiation generating unit that irradiates radiation toward the radiation detection device; a signal processing unit that processes a signal output from the radiation detection device; A CT device comprising: [Item 28] the radiation detection device is a photon counting type radiation detection device, Item 28. The CT apparatus according to item 27, wherein the signal processing unit generates image data using a count result of radiation photons derived from radiation transmitted through a subject. [Item 29] A radiation detection device according to any one of items 22 to 26, a radiation generating unit that irradiates radiation toward the radiation detection device; a signal processing unit that processes a signal output from the radiation detection device; A radiation diagnostic apparatus comprising: [Item 30] A method for manufacturing a radiation detection device, comprising: A fixing step of fixing a plurality of unit structures each having a semiconductor layer for converting radiation into an electric charge to each other so as to form an array, The fixing step includes: bonding each of the plurality of unit structures to a substrate provided in common to the plurality of unit structures by solid-state bonding; bonding two adjacent unit structures in the array to each other by solid-state bonding; and bonding each of two adjacent unit structures in the array and a member disposed between the two adjacent unit structures to each other by solid-state bonding. [Item 31] Item 31. The manufacturing method according to item 30, wherein the fixing step includes bonding each of the plurality of unit structures to the substrate by solid-state bonding. [Item 32] Item 32. The manufacturing method according to item 31, wherein the fixing step includes bonding the semiconductor layer of each of the plurality of unit structures to the substrate by solid-state bonding. [Item 33] 33. The manufacturing method according to any one of items 30 to 32, wherein the fixing step includes joining two adjacent unit structures in the array to each other by solid-state bonding. [Item 34] Item 34. The manufacturing method according to item 33, wherein the fixing step includes bonding the semiconductor layers of two adjacent unit structures in the array to each other by solid-state bonding. [Item 35] Each of the plurality of unit structures is a mounting substrate on which a circuit for processing a signal based on the charge obtained in the semiconductor layer is mounted; an interposer located between the semiconductor layer and the mounting substrate, The fixing step includes: bonding the mounting substrates of two adjacent unit structures in the array to each other by solid-state bonding; 35. The manufacturing method according to item 33 or 34, further comprising at least one of: joining two adjacent unit interposers in the array by solid-state welding. [Item 36] Each of the plurality of unit structures further includes an insulating layer covering at least a portion of a side surface of the semiconductor layer, Item 34. The manufacturing method according to item 33, wherein the fixing step includes joining the insulating layers of two adjacent unit structures in the array to each other by solid-state welding. [Item 37] 34. The manufacturing method according to any one of items 30 to 33, wherein the fixing step includes joining each of two adjacent unit structures in the array and the member disposed between the two adjacent unit structures by solid-state welding. [Item 38] Item 38. The manufacturing method according to item 37, wherein the member disposed between the two adjacent unit structures includes an insulating layer. [Item 39] 39. The manufacturing method according to any one of items 30 to 38, further comprising a polishing step of polishing the surfaces to be joined by solid-state bonding. [Item 40] Item 40. The manufacturing method according to item 39, wherein in the polishing step, the surface is polished until the surface roughness of the surface becomes Rmax 10 nm or less. [Item 41] 41. The manufacturing method according to any one of items 30 to 40, wherein in the fixing step, bonding by solid-state bonding includes bonding by room temperature bonding. [Item 42] The substrate is A conductive layer bonded to the plurality of unit structures; 42. The manufacturing method according to any one of items 30 to 41, further comprising: an insulating layer located on the opposite side of the plurality of unit structures with respect to the conductive layer. [Item 43] A program for causing a computer to execute each step of the manufacturing method described in any one of Items 30 to 42.

[0131] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0132] 100 CT device, 104 radiation detection device, 301 sensor unit, 302 heat dissipation member, 303 frame, 305 substrate, 410 connecting member

Claims

1. 1. A radiation detection device, comprising: A plurality of unit structures each having a semiconductor layer that converts radiation into an electric charge and arranged to form an array; a connecting member for connecting two adjacent unit structures to each other in the array, A radiation detection device, wherein the coupling member is formed of a material that can be used as a deposition material.

2. The radiation detection apparatus of claim 1 , wherein the coupling member comprises parylene.

3. The radiation detection apparatus of claim 1 , wherein the coupling member comprises one or more of silicon oxide, aluminum oxide, and silicon nitride.

4. The radiation detection device according to claim 1 , wherein the bonding member bonds the semiconductor layers of two adjacent unit structures in the array.

5. Each of the plurality of unit structures is a mounting substrate on which a circuit for processing a signal based on the charge obtained in the semiconductor layer is mounted; The radiation detection device according to claim 1 , further comprising an interposer located between the semiconductor layer and the mounting substrate.

6. The radiation detection device according to claim 5 , wherein a size of the semiconductor layer is larger than a size of the mounting substrate and a size of the interposer in a plan view with respect to a radiation incident surface.

7. The radiation detection device according to claim 1 , wherein the bonding member covers a side surface of the semiconductor layer and at least a portion of a lower surface of the semiconductor layer.

8. The radiation detection device according to claim 1 , wherein the coupling member has elasticity.

9. the plurality of unit structures are a plurality of sensor units, The radiation detection apparatus according to claim 1 , comprising a plurality of sensor modules each including the plurality of sensor units.

10. A radiation detection device according to any one of claims 1 to 9; a radiation generating unit that irradiates radiation toward the radiation detection device; a signal processing unit that processes a signal output from the radiation detection device; A CT device comprising:

11. the radiation detection device is a photon counting type radiation detection device, The CT apparatus according to claim 10 , wherein the signal processing unit generates image data using a count result of radiation photons originating from radiation transmitted through a subject.

12. A radiation detection device according to any one of claims 1 to 9; a radiation generating unit that irradiates radiation toward the radiation detection device; a signal processing unit that processes a signal output from the radiation detection device; A radiation diagnostic apparatus comprising:

13. A method for manufacturing a radiation detection device, comprising: A fixing step of fixing a plurality of unit structures each having a semiconductor layer for converting radiation into an electric charge to each other by using a bonding member so as to form an array, The method, wherein the fixing step includes forming the coupling member by vapor deposition.

14. The manufacturing method according to claim 13 , wherein the bonding member bonds the semiconductor layer of two adjacent unit structures in the array.

15. Each of the plurality of unit structures is a mounting substrate on which a circuit for processing a signal based on the charge obtained in the semiconductor layer is mounted; an interposer located between the semiconductor layer and the mounting substrate, the coupling member further couples the mounting substrates of two adjacent unit structures in the array together, The manufacturing method according to claim 14 , wherein the coupling member further couples the interposers of two adjacent unit configurations in the array.

16. 14. The manufacturing method according to claim 13, further comprising the step of forming, after the fixing step, a mounting substrate on which a circuit for processing a signal based on the charge obtained in the semiconductor layer is mounted, and an interposer located between the semiconductor layer and the mounting substrate.

17. The manufacturing method according to claim 13 , further comprising the step of bonding the plurality of unit structures fixed to one another to a substrate after the fixing step.

18. The method of claim 13 , wherein the bonding member comprises one or more of parylene, polyethylene, polytetrafluoroethylene, polyimide, polyamide, polyurea, and polyurethane.

19. The method of claim 13 , wherein the bonding member comprises one or more of silicon oxide, aluminum oxide, and silicon nitride.

20. The method of claim 13 , wherein the bonding member comprises one or more of TEOS, TMB, TEB, TMP, TMOP, TEOP, TriMS, and MTMS.

21. A program for causing a computer of a deposition apparatus to execute each step of the manufacturing method according to any one of claims 13 to 20.

22. 1. A radiation detection device, comprising: The present invention relates to a semiconductor layer that converts radiation into electric charges, and the semiconductor layer is arranged to form an array of unit structures. between each of the plurality of unit structures and a substrate provided in common to the plurality of unit structures; between two adjacent unit structures in the array; Between each of two adjacent unit structures in the array and a member disposed between the two adjacent unit structures; In at least one of the above, the two members constituting the boundary are joined by solid-state welding.

23. The radiation detection device of claim 22 , further comprising an insulating layer between the semiconductor layers of two adjacent unit structures in the array.

24. The substrate is A conductive layer bonded to the plurality of unit structures; 23. The radiation detection device of claim 22, further comprising: an insulating layer located on an opposite side of the plurality of unit structures with respect to the conductive layer.

25. 1. A radiation detection device, comprising: The present invention relates to a semiconductor layer that converts radiation into electric charges, and the semiconductor layer is arranged to form an array of unit structures. between each of the plurality of unit structures and a substrate provided in common to the plurality of unit structures; between two adjacent unit structures in the array; Between each of two adjacent unit structures in the array and a member disposed between the two adjacent unit structures; In at least one of the above, the two members constituting the boundary are joined by cohesive forces between atoms.

26. the plurality of unit structures are a plurality of sensor units, The radiation detection apparatus of claim 25 , comprising a plurality of sensor modules each including a plurality of the sensor units.

27. A radiation detection device according to any one of claims 22 to 26, a radiation generating unit that irradiates radiation toward the radiation detection device; a signal processing unit that processes a signal output from the radiation detection device; A CT device comprising:

28. the radiation detection device is a photon counting type radiation detection device, 28. The CT apparatus according to claim 27, wherein the signal processing unit generates image data using a count result of radiation photons originating from radiation transmitted through a subject.

29. A radiation detection device according to any one of claims 22 to 26, a radiation generating unit that irradiates radiation toward the radiation detection device; a signal processing unit that processes a signal output from the radiation detection device; A radiation diagnostic apparatus comprising:

30. A method for manufacturing a radiation detection device, comprising: A fixing step of fixing a plurality of unit structures each having a semiconductor layer for converting radiation into an electric charge to each other so as to form an array, The fixing step includes: bonding each of the plurality of unit structures to a substrate provided in common to the plurality of unit structures by solid-state bonding; bonding two adjacent unit structures in the array to each other by solid state bonding; and bonding each of two adjacent unit structures in the array and a member disposed between the two adjacent unit structures to each other by solid-state bonding.

31. The manufacturing method according to claim 30 , wherein the fixing step includes bonding each of the plurality of unit structures to the substrate by solid-state bonding.

32. The manufacturing method according to claim 31 , wherein the fixing step includes bonding the semiconductor layer of each of the plurality of unit structures to the substrate by solid-state bonding.

33. The method according to claim 30 , wherein the fixing step comprises joining two adjacent unit structures in the array to each other by solid-state welding.

34. The manufacturing method according to claim 33 , wherein the fixing step includes bonding the semiconductor layer of two adjacent unit structures in the array to each other by solid-state bonding.

35. Each of the plurality of unit structures is a mounting substrate on which a circuit for processing a signal based on the charge obtained in the semiconductor layer is mounted; an interposer located between the semiconductor layer and the mounting substrate, The fixing step includes: bonding the mounting substrates of two adjacent unit structures in the array to each other by solid-state bonding; and b. bonding the interposers of two adjacent unitary structures in the array together by solid state bonding.

36. Each of the plurality of unit structures further includes an insulating layer covering at least a portion of a side surface of the semiconductor layer, The method according to claim 33 , wherein the fixing step includes bonding the insulating layers of two adjacent unit structures in the array to each other by solid-state bonding.

37. The manufacturing method according to claim 30 , wherein the fixing step includes joining each of two adjacent unit structures in the array and the member disposed between the two adjacent unit structures by solid-state welding.

38. The manufacturing method according to claim 37 , wherein the member disposed between the two adjacent unit structures includes an insulating layer.

39. The manufacturing method according to claim 30, further comprising a polishing step of polishing the surfaces to be joined by solid-state bonding.

40. The manufacturing method according to claim 39 , wherein in the polishing step, the surface is polished until a surface roughness of the surface becomes Rmax 10 nm or less.

41. The manufacturing method according to claim 30, wherein in the fixing step, bonding by solid-state bonding includes bonding by room temperature bonding.

42. The substrate is A conductive layer bonded to the plurality of unit structures; The method of claim 30 , further comprising: an insulating layer located on an opposite side of the plurality of unit structures with respect to the conductive layer.

43. A program for causing a computer to execute each step of the manufacturing method according to any one of claims 30 to 42.

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