Spin converter

Abstract

To provide a spin converter capable of changing strength of a current or a voltage while being miniaturized.SOLUTION: A spin converter 100 comprises: a first spin orbital torque wiring layer 10; a second spin orbital torque wiring layer 20; and a first spin wave propagation layer. The first spin wave propagation layer is between the first spin orbital torque wiring layer and the second spin orbital torque wiring layer. A current or a voltage is applied to between a first terminal 41 of a first end and a second terminal 42 of a second end of an X direction of the first spin orbital torque wiring layer. The current or the voltage is applied to between a third terminal 43 of a third end and a fourth terminal 44 of a fourth end of the second spin orbital torque wiring layer. The third end and the fourth end are positioned differently at the second spin orbital torque wiring layer in a Y direction orthogonal to the X direction.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a spin transducer. [Background technology]

[0002] Transformers, which change the intensity of current or voltage, are one of the main electronic components used in various electronic devices. For example, Patent Document 1 discloses a transformer using a coil. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2023-018317 A Summary of the Invention [Problem to be solved by the invention]

[0004] There is a trade-off between the size of the coil and the strength of the inductance, and it is difficult to achieve a large inductance with a small coil, so there is a limit to how small a transformer that uses a coil can be made.

[0005] The present disclosure has been made in consideration of the above circumstances, and has an object to provide a spin converter that can be miniaturized and that can change the intensity of current or voltage. [Means for solving the problem]

[0006] In order to solve the above problems, the present disclosure provides the following means.

[0007] A spin converter according to a first aspect includes a first spin orbit torque wiring layer, a second spin orbit torque wiring layer, and a first spin-wave propagation layer. The first spin orbit torque wiring layer is between the first spin orbit torque wiring layer and the second spin orbit torque wiring layer. The first spin orbit torque wiring layer is configured to apply a current or voltage between a first end and a second end in a first direction of the first spin orbit torque wiring layer, and to output a current or voltage between a third end and a fourth end of the second spin orbit torque wiring layer. The third end and the fourth end are located at different positions of the second spin orbit torque wiring layer in a second direction perpendicular to the first direction. Effect of the Invention

[0008] A spin transducer according to the present disclosure can be miniaturized and can vary the magnitude of current or voltage. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view of a spin transducer according to a first embodiment. [Diagram 2] 1 is a first cross-sectional view of a spin transducer according to a first embodiment. [Diagram 3] 4 is a second cross-sectional view of the spin transducer according to the first embodiment. FIG. [Figure 4] FIG. 2 is a diagram for explaining a function of the spin converter according to the first embodiment. [Diagram 5] FIG. 2 is a schematic diagram showing an example of an application of the spin transducer according to the first embodiment. [Figure 6] FIG. 2 is a plan view of a first modified example of the spin transducer according to the first embodiment. [Figure 7] FIG. 11 is a plan view of a second modified example of the spin transducer according to the first embodiment. [Figure 8] FIG. 13 is a plan view of a third modified example of the spin transducer according to the first embodiment. [Figure 9] FIG. 11 is a plan view of a spin transducer according to a second embodiment. [Figure 10] FIG. 11 is a first cross-sectional view of a spin transducer according to a second embodiment. [Figure 11]FIG. 11 is a second cross-sectional view of the spin transducer according to the second embodiment. [Figure 12] FIG. 11 is a diagram for explaining the function of a spin converter according to a second embodiment. [Figure 13] FIG. 11 is a plan view of a first modified example of the spin transducer according to the second embodiment. [Figure 14] FIG. 11 is a first cross-sectional view of a first modified example of a spin transducer according to a second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] The present embodiment will be described in detail below with reference to the drawings as appropriate. The drawings used in the following description may show characteristic parts in an enlarged scale for the sake of convenience in order to make the characteristics easier to understand, and the dimensional ratios of each component may differ from the actual ones. The materials, dimensions, etc. exemplified in the following description are merely examples, and the present disclosure is not limited thereto, and may be appropriately modified and implemented within the scope of the effects of the present disclosure.

[0011] First, let us define the directions. One direction of the surface in which each layer extends is the X direction, and the direction perpendicular to the X direction is the Y direction. For example, the first direction connecting the first end e1 and the second end e2 of the first spin orbit torque wiring layer is the X direction. The second direction perpendicular to the first direction is, for example, the Y direction. The thickness direction of each layer is the Z direction. The Z direction is perpendicular to the X and Y directions.

[0012] "First embodiment" Fig. 1 is a plan view of a spin converter 100 according to the first embodiment as viewed from the Z direction. Fig. 2 is an XZ cross-sectional view passing through the center in the Y direction of the spin converter according to the first embodiment. Fig. 3 is a YZ cross-sectional view passing through the center in the X direction of the spin converter according to the first embodiment.

[0013] The spin transducer 100 is a signal transducer that produces an output signal that differs from an input signal. For example, the spin transducer 100 can function as a current-to-voltage converter that converts a current to a voltage, a voltage-to-current converter that converts a voltage to a current, or a current or voltage transformer that changes the magnitude of a current or voltage.

[0014] The spin converter 100 includes, for example, a first spin orbit torque wiring layer 10, a second spin orbit torque wiring layer 20, and a first spin wave propagation layer 30. The spin converter 100 may further include a first terminal 41, a second terminal 42, a third terminal 43, a fourth terminal 44, and a power supply 50. The spin converter 100 may be surrounded by an insulating layer 90.

[0015] The first terminal 41 is connected to a first end e1 of the first spin orbit torque wiring layer 10. The second terminal 42 is connected to a second end e2 of the first spin orbit torque wiring layer 10. The first terminal 41 and the second terminal 42 are terminals for writing signals to the spin converter 100. The first terminal 41 and the second terminal 42 are conductors. For example, the first terminal 41 is connected to a power supply 50, and the second terminal 42 is connected to ground. The power supply 50 may be connected to the second terminal 42. When the power supply 50 and the ground are in direct contact with the first spin orbit torque wiring layer 10, the first terminal 41 and the second terminal 42 may not be provided.

[0016] The third terminal 43 is connected to a first end e3 of the second spin orbit torque wiring layer 20. The first end e3 is an example of a third end. The fourth terminal 44 is connected to a second end e4 of the second spin orbit torque wiring layer 20. The second end e4 is an example of a fourth end. The third terminal 43 and the fourth terminal 44 are readout terminals for signals from the spin converter 100. The third terminal 43 and the fourth terminal 44 are conductors. For example, the third terminal 43 and the fourth terminal 44 are connected to other elements. The third terminal 43 and the fourth terminal 44 may be omitted.

[0017] The power supply 50 is connected to the first spin orbit torque wiring layer 10. The power supply 50 is, for example, a voltage source or a current source. The power supply 50 is configured to apply a current or a voltage between the first end e1 and the second end e2. For example, when the power supply 50 is a voltage source, the power supply 50 generates a potential difference between the first end e1 and the second end e2 of the first spin orbit torque wiring layer 10. For example, when the power supply 50 is a current source, the power supply 50 passes a current between the first end e1 and the second end e2 of the first spin orbit torque wiring layer 10.

[0018] The insulating layer 90 is, for example, silicon oxide (SiO x ), silicon nitride (SiN x ), silicon carbide (SiC), chromium nitride, silicon carbonitride (SiCN), silicon oxynitride (SiON), aluminum oxide (Al2O3), zirconium oxide (ZrO x ) etc.

[0019] The first spin orbit torque wiring layer 10 is a wiring for writing a signal to the spin converter 100. A current or voltage is applied between a first end e1 and a second end e2 of the first spin orbit torque wiring layer 10 in the X direction.

[0020] The first spin orbit torque wiring layer 10 includes any one of a metal, an alloy, an intermetallic compound, a metal boride, a metal carbide, a metal silicide, and a metal phosphide that has a function of generating a spin current by the spin Hall effect when a current flows.

[0021] The first spin orbit torque wiring layer 10 contains, for example, a nonmagnetic heavy metal as a main component. Heavy metal means a metal with a specific gravity equal to or greater than that of yttrium (Y). Nonmagnetic heavy metals are, for example, nonmagnetic metals with a large atomic number of 39 or greater that have d electrons or f electrons in their outermost shell. The first spin orbit torque wiring layer 10 is made of, for example, Hf, Ta, W, or Ti. Stronger spin orbit interactions occur in nonmagnetic heavy metals than in other metals. The spin Hall effect occurs due to the spin orbit interaction. When spins are unevenly distributed in the first spin orbit torque wiring layer 10 due to the spin Hall effect, a spin current J S is more likely to occur.

[0022] The first spin orbit torque wiring layer 10 may contain a magnetic metal. The magnetic metal is a ferromagnetic metal or an antiferromagnetic metal. A small amount of magnetic metal contained in a nonmagnetic body becomes a scattering factor of spin. A small amount is, for example, 3% or less of the total molar ratio of the elements constituting the first spin orbit torque wiring layer 10. When the spin is scattered by the magnetic metal, the spin orbit interaction is enhanced, and the generation efficiency of the spin current with respect to the electric current is increased.

[0023] The first spin-orbit torque wiring layer 10 may include a topological insulator. A topological insulator is a material in which the inside of the material is an insulator or a high resistance material, but a spin-polarized metallic state occurs on the surface. In a topological insulator, an internal magnetic field is generated due to spin-orbit interaction. In a topological insulator, a new topological phase appears due to the effect of spin-orbit interaction even in the absence of an external magnetic field. A topological insulator can generate a pure spin current with high efficiency due to a strong spin-orbit interaction and the breaking of inversion symmetry at the edge. In addition, a topological insulator can realize a high current density with a small amount of current because a current flows only on the surface.

[0024] Topological insulators include, for example, Sn, SnTe, and Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 , TlBiSe2, Bi2Te3, Bi 1-x Sb x , (Bi 1-x Sb x )2Te3, (Nd,Pr)2Ir2O7, etc. Topological insulators are capable of generating spin currents with high efficiency.

[0025] For example, the first spin orbit torque wiring layer 10 has a length L1 in the X direction longer than its length L2 in the Y direction. A spin current is generated by scattering of electrons flowing through the first spin orbit torque wiring layer 10. The X direction is the flow direction of electrons in the first spin orbit torque wiring layer 10. If the length L1 in the X direction is long, the number of times that electrons are scattered from the first end e1 to the second end e2 increases. If the number of times that electrons are scattered increases, the efficiency of generating a spin current in the first spin orbit torque wiring layer 10 increases.

[0026] The second spin orbit torque wiring layer 20 is a readout wiring for a signal from the spin converter 100. The spin converter 100 outputs a current or a voltage between the first end e3 and the second end e4 of the second spin orbit torque wiring layer 20.

[0027] The first end e3 and the second end e4 of the second spin orbit torque wiring layer 20 are at different positions in the Y direction from the first end e1 and the second end e2 of the first spin orbit torque wiring layer 10. For example, the line connecting the first end e1 and the second end e2 of the first spin orbit torque wiring layer 10 at the shortest distance intersects with the line connecting the first end e3 and the second end e4 of the second spin orbit torque wiring layer 20 at the shortest distance. The line connecting the first end e3 and the second end e4 of the second spin orbit torque wiring layer 20 at the shortest distance may be inclined with respect to the Y direction.

[0028] At least a part of the second spin orbit torque wiring layer 20 faces the first spin orbit torque wiring layer 10 with the first spin wave propagation layer 30 sandwiched therebetween.

[0029] The second spin orbit torque wiring layer 20 includes any of metals, alloys, intermetallic compounds, metal borides, metal carbides, metal silicides, and metal phosphides that have the function of generating a spin current by the spin Hall effect when a current flows. The second spin orbit torque wiring layer 20 can be made of the same material as the first spin orbit torque wiring layer 10. The second spin orbit torque wiring layer 20 may be made of the same material as the first spin orbit torque wiring layer 10, or may be made of a different material. The second spin orbit torque wiring layer 20 is preferably a topological insulator.

[0030] For example, the second spin orbit torque wiring layer 20 has a length L3 in the X direction longer than the length L4 in the Y direction. When the length L3 in the X direction is longer than the length L4 in the Y direction, the resistance of the second spin orbit torque wiring layer 20 in the Y direction is reduced. This is because the flow path for the current flowing in the Y direction is expanded. When the potential difference between the first end e3 and the second end e4 is constant, the lower the resistance in the Y direction of the second spin orbit torque wiring layer 20, the larger the amount of current flowing between the first end e3 and the second end e4. That is, in the spin converter 100, when the length L3 in the X direction of the second spin orbit torque wiring layer 20 is longer than the length L4 in the Y direction, the output current output from the spin converter 100 is increased.

[0031] The thickness t20 in the Z direction of the second spin orbit torque wiring layer 20 is, for example, thicker than the thickness t10 in the Z direction of the first spin orbit torque wiring layer 10. The thinner the thickness t10 of the first spin orbit torque wiring layer 10, the more efficiently it can generate spin current. Also, the thicker the thickness t20 in the Z direction of the second spin orbit torque wiring layer 20, the smaller the resistance in the Y direction of the second spin orbit torque wiring layer 20. This is because the flow path for the current flowing in the Y direction becomes wider. When the spin converter 100 satisfies this configuration, the output current output from the spin converter 100 becomes large.

[0032] The second spin orbit torque wiring layer 20 overlaps with the first spin orbit torque wiring layer 10 when viewed from the Z direction. The overlapping surface where the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 overlap is (a / b). 2 It is preferable to satisfy ×r>1. Here, a is the length of the overlapping surface in the X direction, b is the length of the overlapping surface in the Y direction, r satisfies r=B / A, A is the current density of the first spin orbit torque wiring layer 10, and B is the current density of the second spin orbit torque wiring layer 20. When this relationship is satisfied, the current or voltage input to the spin converter 100 can be amplified and output.

[0033] The first spin-wave propagation layer 30 is sandwiched between the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20. The first spin-wave propagation layer 30 propagates the spins injected from the first spin orbit torque wiring layer 10 as spin waves and transmits them to the second spin orbit torque wiring layer 20.

[0034] The first spin-wave propagation layer 30 is, for example, a magnetic insulator. When the first spin-wave propagation layer 30 contains a magnetic material, spin waves can be propagated. Furthermore, when the first spin-wave propagation layer 30 has insulating properties, the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 can be electrically separated. The first spin-wave propagation layer 30 may be any of a ferromagnetic material, a ferrimagnetic material, and an antiferromagnetic material.

[0035] The thickness of the first spin-wave propagation layer 30 is preferably equal to or less than the spin conduction length. The spin conduction length is a length corresponding to the spin diffusion length in a conductive material, and is the distance over which the input spin is reduced by half. If the thickness of the first spin-wave propagation layer 30 is equal to or less than the spin conduction length, the attenuation rate of the spin in the first spin-wave propagation layer 30 can be reduced to 30% or less. The thickness of the first spin-wave propagation layer 30 is, for example, 6 nm or more.

[0036] The spin converter 100 can be fabricated by repeating a process of stacking each layer and a process of processing each layer. For the process of stacking each layer, for example, a sputtering method, a chemical vapor deposition method (CVD method), an electron beam deposition method (EB deposition method), an atomic laser deposition method, etc. can be used. For example, a process of processing each layer can be performed using photolithography, etc.

[0037] Next, a description will be given of the function of the spin converter 100. FIG.

[0038] The spin converter 100 is an element that converts a signal input between a first terminal 41 and a second terminal 42 and outputs the converted signal as an output signal from between a third terminal 43 and a fourth terminal 44.

[0039] First, a potential difference is applied between the first terminal 41 and the second terminal 42 using the power supply 50. This becomes the input signal to the spin converter 100. When a potential difference is generated between the first terminal 41 and the second terminal 42, a current I1 flows in the X direction of the first spin orbit torque wiring layer 10.

[0040] The current I1 flowing through the first spin orbit torque wiring layer 10 generates a spin current due to the spin Hall effect.

[0041] The spin Hall effect is a phenomenon in which, when electric current is passed, a spin current is induced in a direction perpendicular to the direction of electric current flow (for example, the z direction) due to spin-orbit interaction. The spin Hall effect is similar to the regular Hall effect in that the direction of movement of moving charges (electrons) can be bent. In the regular Hall effect, the direction of movement of charged particles moving in a magnetic field is bent by the Lorentz force. In contrast, with the spin Hall effect, the direction of spin movement can be bent simply by the movement of electrons (the flow of electric current) even in the absence of a magnetic field.

[0042] For example, when a current flows in the X direction of the first spin orbit torque wiring layer 10, the spins polarized in the -y direction are bent in the -Z direction relative to the direction of travel, and the spins S1 polarized in the +y direction are bent in the +Z direction relative to the direction of travel.

[0043] The spins S1 are injected into the first spin-wave propagation layer 30 adjacent to the first spin orbit torque wiring layer 10. The magnetization in the first spin-wave propagation layer 30 precesses due to the spins S1 injected into the first spin-wave propagation layer 30. The precession of the magnetization becomes a spin wave SW1 and propagates through the first spin-wave propagation layer 30.

[0044] Spins propagated as spin waves SW1 are accumulated between the first spin wave propagation layer 30 and the second spin orbit torque wiring layer 20. When the spin state in the second spin orbit torque wiring layer 20 becomes non-uniform, a current I2 is generated in the Y direction of the second spin orbit torque wiring layer 20. This is a reverse phenomenon of the first spin orbit torque wiring layer 10, where the current I1 generates a spin current, and the spin generates the current I2.

[0045] The current I2 is generated between the third terminal 43 and the fourth terminal 44. That is, the spin converter 100 converts the current I1 into the current I2. If the resistance of the first spin orbit torque wiring layer 10 is sufficiently high, the current I1 can be expressed as a potential difference. In this case, the spin converter 100 converts a voltage into the current I2. If the resistance of the second spin orbit torque wiring layer 20 is sufficiently high, the current I2 can be expressed as a potential difference. In this case, the spin converter 100 converts the current I1 into a voltage.

[0046] The current I2 flowing between the first end e3 and the second end e4 of the second spin orbit torque wiring layer 20 can be made larger than the current I1 flowing between the first end e1 and the second end e2. For example, the current I2 can be made larger than the current I1 by widening the current flow path in the Y direction of the second spin orbit torque wiring layer 20 or narrowing the current flow path in the X direction of the first spin orbit torque wiring layer 10.

[0047] Furthermore, the second potential difference between the first end e3 and the second end e4 of the second spin orbit torque wiring layer 20 can be made larger than the first potential difference between the first end e1 and the second end e2. For example, the second potential difference can be made larger than the first potential difference by narrowing the current flow path in the Y direction of the second spin orbit torque wiring layer 20 or by increasing the length of the second spin orbit torque wiring layer 20 in the Y direction.

[0048] The spin converter 100 according to the first embodiment converts an input signal into an output signal using a new mechanism. Moreover, since the spin converter 100 according to the first embodiment utilizes energy conversion between current and spin, there is no restriction on the number of coil turns, etc., and it is easy to miniaturize the device.

[0049] The spin converter 100 according to the present embodiment can be applied to, for example, a quantum computer. Fig. 5 is a schematic diagram of a quantum computer to which the spin converter 100 according to the present embodiment is applied. The quantum computer 200 includes, for example, a quantum processor 201, the spin converter 100, a non-reciprocal circuit element 202, filters 203, 204, and 205, and an amplifier 206.

[0050] The quantum processor 201 performs quantum computation. The non-reciprocal circuit element 202 delivers a readout signal of a quantum bit from the quantum processor 201. The non-reciprocal circuit element 202 is, for example, a circulator. The spin converter 100 converts an input signal into an output signal. The filters 203, 204, and 205, for example, limit the frequency of the propagating signal. The amplifier 206 amplifies the readout signal.

[0051] For example, a superconducting quantum computer operates at cryogenic temperatures. Therefore, the spin converter 100 near the quantum processor 201 is also placed in a position exposed to a cryogenic environment. It is difficult to maintain a large volume of space in a cryogenic environment, and therefore there is a demand for miniaturization of the spin converter 100. The spin converter 100 according to this embodiment is easy to miniaturize and is suitable for application to integrating electronic components in a quantum computer.

[0052] Although an example of the first embodiment has been shown so far, the present invention is not limited to these embodiments, and various modifications are possible.

[0053] FIG. 6 is a plan view of a spin converter 101 according to a first modified example of the first embodiment. As shown in FIG. 6, the length L3' in the X direction of the second spin orbit torque wiring layer 20 may be shorter than the length L4' in the Y direction. If the length L4' in the Y direction of the second spin orbit torque wiring layer 20 is long, the resistance of the second spin orbit torque wiring layer 20 between the third terminal 43 and the fourth terminal 44 increases. If the length L3' in the X direction of the second spin orbit torque wiring layer 20 is short, the current flow path becomes narrower, and the resistance of the second spin orbit torque wiring layer 20 between the third terminal 43 and the fourth terminal 44 increases. That is, in the spin converter 100, the output voltage output from the spin converter 100 can be increased by making the length L4' in the Y direction of the second spin orbit torque wiring layer 20 longer than the length L3' in the X direction.

[0054] 7 is a plan view of a spin converter 102 according to a second modification. As shown in FIG. 7, the length L1' in the X direction of the first spin orbit torque wiring layer 10 may be shorter than the length L2' in the Y direction. The first spin orbit torque wiring layer 10 often has high resistance. By shortening the length L1' in the X direction of the first spin orbit torque wiring layer 10, the element resistance of the spin converter 102 can be reduced.

[0055] Furthermore, the length L3 in the X direction of the second spin orbit torque wiring layer 20 may be longer than the length L1' in the X direction of the first spin orbit torque wiring layer 10. When increasing the output current output from the spin converter 100, it is preferable that the length L3 in the X direction of the second spin orbit torque wiring layer 20 is longer.

[0056] The length L3 in the X direction and the length L4 in the Y direction of the second spin orbit torque wiring layer 20 can be set arbitrarily regardless of the length L1 in the X direction and the length L2 in the Y direction of the first spin orbit torque wiring layer 10. This is because the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 are formed in different layers.

[0057] Fig. 8 is a plan view of a spin converter 103 according to a third modified example. As shown in Fig. 8, the length L4'' in the Y direction of the second spin orbit torque wiring layer 20 may be shorter than the length L2'' in the Y direction of the first spin orbit torque wiring layer 10. When increasing the output current output from the spin converter 100, it is preferable that the length L4'' in the Y direction of the second spin orbit torque wiring layer 20 is shorter.

[0058] Although several modified examples have been presented so far, the spin converter according to the first embodiment is not limited to these examples. The shape can be freely designed according to the function required of the spin converter.

[0059] For example, when increasing the output current output from the spin converter 100, it is preferable that the length L3 in the X direction of the second spin orbit torque wiring layer 20 is long, and it is preferable that the length L4 in the Y direction of the second spin orbit torque wiring layer 20 is short. For example, the length L3 in the X direction of the second spin orbit torque wiring layer 20 may be longer than the length L1 in the X direction of the first spin orbit torque wiring layer 10. Also, the length L4 in the Y direction of the second spin orbit torque wiring layer 20 may be shorter than the length L2 in the Y direction of the first spin orbit torque wiring layer 10.

[0060] For example, when increasing the output voltage output from the spin converter 100, it is preferable that the length L3 in the X direction of the second spin orbit torque wiring layer 20 is short, and it is preferable that the length L4 in the Y direction of the second spin orbit torque wiring layer 20 is long. For example, the length L3 in the X direction of the second spin orbit torque wiring layer 20 may be shorter than the length L1 in the X direction of the first spin orbit torque wiring layer 10. Also, the length L4 in the Y direction of the second spin orbit torque wiring layer 20 may be longer than the length L2 in the Y direction of the first spin orbit torque wiring layer 10.

[0061] "Second embodiment" Fig. 9 is a plan view of the spin converter 110 according to the second embodiment as viewed from the Z direction. Fig. 10 is an XZ cross-sectional view passing through the center in the Y direction of the spin converter 110 according to the second embodiment. Fig. 11 is a YZ cross-sectional view passing through the center in the X direction of the spin converter 110 according to the second embodiment.

[0062] The spin converter 110 includes, for example, a first spin orbit torque wiring layer 10, a second spin orbit torque wiring layer 20, a third spin orbit torque wiring layer 60, a first spin wave propagation layer 30, and a second spin wave propagation layer 70. The spin converter 100 may further include a first terminal 41, a second terminal 42, a third terminal 43, a fourth terminal 44, a fifth terminal 45, a sixth terminal 46, a power supply 50, and a power supply 51. In the spin converter 110, the same components as those in the spin converter 100 are denoted by the same reference numerals, and description thereof will be omitted.

[0063] The fifth terminal 45 is connected to a first end e5 of the third spin orbit torque wiring layer 60. The sixth terminal 46 is connected to a second end e6 of the third spin orbit torque wiring layer 60. The fifth terminal 45 and the sixth terminal 46 are terminals for writing signals to the spin converter 110. The fifth terminal 45 and the sixth terminal 46 are conductors. For example, the fifth terminal 45 is connected to a power supply 51, and the sixth terminal 46 is connected to a ground. The power supply 51 may be connected to the sixth terminal 46. When the power supply 51 and the ground are in direct contact with the third spin orbit torque wiring layer 60, the fifth terminal 45 and the sixth terminal 46 may not be provided.

[0064] The power supply 51 is connected to the third spin orbit torque wiring layer 60. The power supply 51 is, for example, a voltage source or a current source. The power supply 51 is configured to apply a current or a voltage between the first end e5 and the second end e6. For example, when the power supply 51 is a voltage source, the power supply 51 generates a potential difference between the first end e5 and the second end e6 of the third spin orbit torque wiring layer 60. For example, when the power supply 51 is a current source, the power supply 51 passes a current between the first end e5 and the second end e6 of the third spin orbit torque wiring layer 60.

[0065] At least a part of the third spin orbit torque wiring layer 60 faces the second spin orbit torque wiring layer 20, sandwiching the second spin wave propagation layer 70. The third spin orbit torque wiring layer 60 is positioned to overlap the first spin orbit torque wiring layer 10 in the Z direction. A first end e5 of the third spin orbit torque wiring layer 60 is positioned to face, for example, the first end e1 of the first spin orbit torque wiring layer 10 in the Z direction.

[0066] The third spin orbit torque wiring layer 60, together with the first spin orbit torque wiring layer 10, is a write wiring for a signal to the spin converter 100. A current or voltage is applied between the first end e5 and the second end e6 in the X direction of the third spin orbit torque wiring layer 60. The third spin orbit torque wiring layer 60 can be made of the same material as the first spin orbit torque wiring layer 10. The third spin orbit torque wiring layer 60 may be made of the same material as the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20, or may be made of a different material. The third spin orbit torque wiring layer 60 is preferably a topological insulator.

[0067] For example, the third spin orbit torque wiring layer 60 has a length L5 in the X direction longer than its length L6 in the Y direction. The spin current generated in the third spin orbit torque wiring layer 60 is generated by scattering of electrons flowing through the third spin orbit torque wiring layer 60. If the length L5 in the X direction is long, the number of times that the electrons are scattered from the first end e5 to the second end e6 increases. If the number of times that the electrons are scattered increases, the efficiency of generating the spin current in the third spin orbit torque wiring layer 60 increases.

[0068] Furthermore, for example, the length L5 in the X direction of the third spin orbit torque wiring layer 60 may be shorter than the length L6 in the Y direction. In this case, the element resistance of the spin converter 110 can be reduced.

[0069] Furthermore, the length L5 in the X direction of the third spin orbit torque wiring layer 60 may be longer or shorter than the length L3 in the X direction of the second spin orbit torque wiring layer 20. Similarly, the length L6 in the Y direction of the third spin orbit torque wiring layer 60 may be longer or shorter than the length L4 in the Y direction of the second spin orbit torque wiring layer 20.

[0070] The thickness t60 in the Z direction of the third spin orbit torque wiring layer 60 is, for example, thinner than the thickness t20 in the Z direction of the second spin orbit torque wiring layer 20. The thinner the thickness t60 of the third spin orbit torque wiring layer 60, the more efficiently it can generate spin current. Also, the thicker the thickness t20 in the Z direction of the second spin orbit torque wiring layer 20, the smaller the resistance in the Y direction of the second spin orbit torque wiring layer 20 can be. When the spin converter 110 satisfies this configuration, the output current output from the spin converter 110 becomes large.

[0071] The second spin-wave propagation layer 70 is sandwiched between the third spin orbit torque wiring layer 60 and the second spin orbit torque wiring layer 20. The second spin-wave propagation layer 70 propagates the spins injected from the third spin orbit torque wiring layer 60 as spin waves, and transmits them to the second spin orbit torque wiring layer 20.

[0072] The second spin-wave propagation layer 70 is, for example, a magnetic insulator. When the second spin-wave propagation layer 70 contains a magnetic material, spin waves can be propagated. Furthermore, when the second spin-wave propagation layer 70 has insulating properties, the third spin orbit torque wiring layer 60 and the second spin orbit torque wiring layer 20 can be electrically separated. The second spin-wave propagation layer 70 may be any of a ferromagnetic material, a ferrimagnetic material, and an antiferromagnetic material.

[0073] The second spin-wave propagation layer 70 is preferably made of the same material as the first spin-wave propagation layer 30. When the resonant frequencies of the second spin-wave propagation layer 70 and the first spin-wave propagation layer 30 match, the timing of spin injection into the second spin orbit torque wiring layer 20 is synchronized, and the efficiency of spin-to-current conversion in the second spin orbit torque wiring layer 20 is increased.

[0074] The thickness of the second spin-wave propagation layer 70 is preferably equal to or less than the spin conduction length. The thickness of the second spin-wave propagation layer 70 is, for example, 6 nm or more.

[0075] The spin converter 110 can be fabricated by repeating the steps of stacking and processing each layer. The steps of stacking and processing each layer can be the same as those in the first embodiment.

[0076] Next, a description will be given of the function of the spin converter 110. FIG.

[0077] The spin converter 110 is an element that converts signals input between the first terminal 41 and the second terminal 42, and between the fifth terminal 45 and the sixth terminal 46, and outputs them as output signals from between the third terminal 43 and the fourth terminal 44.

[0078] First, a potential difference is applied between the first terminal 41 and the second terminal 42 using a power supply 50. Similarly, a potential difference is applied between the fifth terminal 45 and the sixth terminal 46 using a power supply 51. These become the input signals to the spin transducer 110.

[0079] A current I1 flows in the X direction of the first spin orbit torque wiring layer 10 according to the potential difference between the first terminal 41 and the second terminal 42. A current I3 flows in the X direction of the third spin orbit torque wiring layer 60 according to the potential difference between the fifth terminal 45 and the sixth terminal 46. Here, the currents I1 and I3 are set so that their flow directions are opposite to each other. For example, when the potential of the first terminal 41 is made higher than the potential of the second terminal 42, the potential of the fifth terminal 45 is made lower than the potential of the sixth terminal 46. Conversely, when the potential of the first terminal 41 is made lower than the potential of the second terminal 42, the potential of the fifth terminal 45 may be made higher than the potential of the sixth terminal 46.

[0080] The current I1 flowing through the first spin orbit torque wiring layer 10 generates a spin current by the spin Hall effect. The spins S1 are injected into the first spin-wave propagation layer 30 adjacent to the first spin orbit torque wiring layer 10. The spins S1 injected into the first spin-wave propagation layer 30 become spin waves SW1 and propagate through the first spin-wave propagation layer 30.

[0081] Similarly, the current I3 flowing through the third spin orbit torque wiring layer 60 generates a spin current due to the spin Hall effect. The spin S2 generated by the current I3 is injected into the second spin-wave propagation layer 70 adjacent to the third spin orbit torque wiring layer 60. The spin S2 injected into the second spin-wave propagation layer 70 becomes a spin wave SW2 and propagates through the second spin-wave propagation layer 70. Here, the spin S1 generated by the current I1 and the spin S3 generated by the current I3 are spins in the same direction.

[0082] Spins propagated as a spin wave SW1 are accumulated between the first spin wave propagation layer 30 and the second spin orbit torque wiring layer 20. Spins propagated as a spin wave SW2 are accumulated between the second spin wave propagation layer 70 and the second spin orbit torque wiring layer 20. When spins are injected from the top and bottom surfaces of the second spin orbit torque wiring layer 20, the spin state in the second spin orbit torque wiring layer 20 becomes non-uniform. Due to this non-uniformity in the spin state, a current I2' is generated in the Y direction of the second spin orbit torque wiring layer 20.

[0083] The current I2' is generated between the third terminal 43 and the fourth terminal 44. That is, the spin converter 110 converts the currents I1 and I3 into the current I2'. Furthermore, if the resistances of the first spin orbit torque wiring layer 10, the second spin orbit torque wiring layer 20 and the third spin orbit torque wiring layer 60 are high, the input / output signals of the spin converter 110 can be converted into voltages.

[0084] The spin converter 110 according to the second embodiment converts an input signal into an output signal using a new mechanism. Moreover, since the spin converter 110 according to the second embodiment utilizes energy conversion between current and spin, there is no restriction on the number of turns of the coil, and it is easy to miniaturize. Furthermore, since the spin converter 110 according to the second embodiment injects spins from the top and bottom surfaces of the second spin orbit torque wiring layer 20, the spin-to-current conversion efficiency is high.

[0085] Although an example of the second embodiment has been described above, the present disclosure is not limited to these embodiments, and various modifications are possible. For example, a modification of the spin converter 100 according to the first embodiment can be applied to the spin converter 110 according to the second embodiment.

[0086] Fig. 13 is a plan view of a spin converter 111 according to a first modified example of the second embodiment. Fig. 14 is an XZ cross-sectional view of the spin converter 111 according to the first modified example of the second embodiment. In the spin converter 111, the same components as those in the spin converter 110 are denoted by the same reference numerals and description thereof will be omitted.

[0087] The spin converter 111 has, for example, a first spin orbit torque wiring layer 10, a second spin orbit torque wiring layer 20, a third spin orbit torque wiring layer 60, a first spin wave propagation layer 30, a second spin wave propagation layer 70, and a connection wiring 80. The spin converter 111 is provided with the connection wiring 80 instead of the fifth terminal 45 and the sixth terminal 46. The spin converter 111 is also provided with a power supply 52 instead of the power supplies 50 and 51.

[0088] The connection wiring 80 is a conductor. The connection wiring 80 connects, for example, a first end e1 of the first spin orbit torque wiring layer 10 and a first end e5 of the third spin orbit torque wiring layer 60. The power supply 52 is connected to the sixth terminal 46, and the second terminal 42 is connected to the ground. The power supply 52 is configured to apply a current or a voltage to the first spin orbit torque wiring layer 10 and the third spin orbit torque wiring layer 60.

[0089] When a potential difference is applied between the sixth terminal 46 and the second terminal 42 using the power supply 52, a current flows in the X direction in the third spin orbit torque wiring layer 60 and the first spin orbit torque wiring layer 10. The direction of the current flowing in the third spin orbit torque wiring layer 60 is opposite to the direction of the current flowing in the first spin orbit torque wiring layer 10. In other words, the spin converter 111 according to the first modification shows the same function as the spin converter 110 with one power supply 52.

[0090] The spin converter 111 according to the first modification has the same effects as the spin converter 110. Furthermore, the spin converter 111 has fewer components and is easier to miniaturize.

[0091] As described above, the spin converter according to the above-mentioned embodiment functions as a current-voltage converter that converts current to voltage, a voltage-current converter that converts voltage to current, and a current or voltage transformer that changes the intensity of the current or voltage. Below, the conversion efficiency of a specific spin converter is determined when a specific structure is specified.

[0092] "First embodiment" In the first embodiment, a spin converter with the element structure shown in FIG. 1 was assumed. The first spin orbit torque wiring layer 10 had a length L1 in the X direction: a length L2 in the Y direction = 100:1. The second spin orbit torque wiring layer 20 had a length L3 in the X direction: a length L4 in the Y direction = 100:1. The first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 were assumed to be made of the same material, and the conversion efficiency of each spin to current was assumed to be 10%. The resistance of the first spin orbit torque wiring layer 10 in the X direction was 1 kΩ, and the resistance of the second spin orbit torque wiring layer 20 in the Y direction was 0.1 Ω. A voltage of 1 V was applied between the first end e1 and the second end e2. A current of 1 mA flows between the first end e1 and the second end e2. At this time, the electromotive force generated between the first end e3 and the second end e4 is 0.1 V, and a current of 1 A flows between the first end e3 and the second end e4. That is, the spin converter according to the first embodiment amplified a current of 1 mA to 1 A, and the current amplification factor was 1000 times.

[0093] "Second embodiment" The second embodiment differs from the first embodiment in that the spin-current conversion efficiency of each of the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 is assumed to be 1%. The other conditions of the second embodiment are the same as those of the first embodiment. In the second embodiment, the electromotive force generated between the first end e3 and the second end e4 is 0.01 V, and a current of 1 mA flows between the first end e3 and the second end e4. In other words, the current amplification factor of the spin converter according to the second embodiment was 1.

[0094] "Third Example" The third embodiment differs from the first embodiment in that the spin-current conversion efficiency of each of the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 is assumed to be 100%. The other conditions of the third embodiment are the same as those of the first embodiment. In the third embodiment, the electromotive force generated between the first end e3 and the second end e4 is 1 V, and a current of 10 A flows between the first end e3 and the second end e4. In other words, the current amplification factor of the spin converter according to the third embodiment was 10,000 times.

[0095] "Fourth embodiment" The fourth embodiment differs from the first embodiment in that the shapes of the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 are changed. The first spin orbit torque wiring layer 10 has a length L1 in the X direction: a length L2 in the Y direction = 1000:1. The second spin orbit torque wiring layer 20 has a length L3 in the X direction: a length L4 in the Y direction = 1000:1. The first spin orbit torque wiring layer 10 has a resistance in the X direction of 10 kΩ, and the second spin orbit torque wiring layer 20 has a resistance in the Y direction of 0.01 Ω. The other conditions of the fourth embodiment are the same as those of the first embodiment. In the fourth embodiment, a current of 0.1 mA flows between the first end e1 and the second end e2. The electromotive force generated between the first end e3 and the second end e4 is 0.1 V, and a current of 10 A flows between the first end e3 and the second end e4. In other words, the current amplification factor of the spin converter according to the fourth embodiment was 10,000 times.

[0096] "Fifth Example" The fifth embodiment differs from the first embodiment in that the shapes of the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 are changed. The first spin orbit torque wiring layer 10 has a length L1 in the X direction: a length L2 in the Y direction = 20:1. The second spin orbit torque wiring layer 20 has a length L3 in the X direction: a length L4 in the Y direction = 20:1. The first spin orbit torque wiring layer 10 has a resistance in the X direction of 1 kΩ, and the second spin orbit torque wiring layer 20 has a resistance in the Y direction of 2.5 Ω. The other conditions of the fifth embodiment are the same as those of the first embodiment. In the fifth embodiment, a current of 1 mA flows between the first end e1 and the second end e2. The electromotive force generated between the first end e3 and the second end e4 is 0.1 V, and a current of 40 A flows between the first end e3 and the second end e4. In other words, the current amplification factor of the spin converter according to the fifth embodiment was 40 times.

[0097] "Sixth embodiment" The sixth embodiment differs from the fifth embodiment in that the spin-current conversion efficiency of each of the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 is assumed to be 1%. The other conditions of the sixth embodiment are the same as those of the fifth embodiment. In the sixth embodiment, the electromotive force generated between the first end e3 and the second end e4 is 0.01 V, and a current of 4 mA flows between the first end e3 and the second end e4. In other words, the current amplification factor of the spin converter according to the sixth embodiment was four times.

[0098] "Seventh Example" The seventh embodiment is different from the sixth embodiment in that the shapes of the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 are changed. The first spin orbit torque wiring layer 10 has a length L1 in the X direction: a length L2 in the Y direction = 10:1. The second spin orbit torque wiring layer 20 has a length L3 in the X direction: a length L4 in the Y direction = 10:1. The first spin orbit torque wiring layer 10 has a resistance in the X direction of 1 kΩ, and the second spin orbit torque wiring layer 20 has a resistance in the Y direction of 10Ω. The other conditions of the seventh embodiment are the same as those of the sixth embodiment. In the seventh embodiment, a current of 1 mA flows between the first end e1 and the second end e2. The electromotive force generated between the first end e3 and the second end e4 is 0.01 V, and a current of 1 A flows between the first end e3 and the second end e4. That is, the current amplification factor of the spin converter according to the seventh embodiment is 1.

[0099] "Eighth Example" The eighth embodiment is different from the first embodiment in that the shapes of the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 are changed. The first spin orbit torque wiring layer 10 has a length L1 in the X direction and a length L2 in the Y direction of 1:100. The second spin orbit torque wiring layer 20 has a length L3 in the X direction and a length L4 in the Y direction of 1:100. The resistance of the first spin orbit torque wiring layer 10 in the X direction is 0.1Ω, and the resistance of the second spin orbit torque wiring layer 20 in the Y direction is 1 kΩ. The other conditions of the eighth embodiment are the same as those of the first embodiment. In the eighth embodiment, a current of 10 A flows between the first end e1 and the second end e2. The electromotive force generated between the first end e3 and the second end e4 is 0.1 V, and a current of 0.1 mA flows between the first end e3 and the second end e4. In other words, the current amplification factor of the spin converter according to the eighth embodiment was 1 / 10000 times.

[0100] "Ninth Example" The first spin orbit torque wiring layer 10 has a length in the X direction of 100 μm, a length in the Y direction of 1 μm, a thickness in the Z direction of 1 nm, a material of Ta, and a resistivity of 12 mΩcm. The resistance in the X direction of the first spin orbit torque wiring layer 10 is 2400 Ω. When a voltage of 1 V is applied to the first spin orbit torque wiring layer 10 in the X direction, a current of 0.417 mA flows in the X direction of the first spin orbit torque wiring layer 10. The length in the X direction of the second spin orbit torque wiring layer 20 is 1 μm, the length in the Y direction is 100 μm, and the thickness in the Z direction is 1 nm. It is assumed that the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 are made of the same material, and the conversion efficiency of spin and current of each is 10%. The resistance in the Y direction of the second spin orbit torque wiring layer 20 is 0.24 Ω. A potential difference of 0.1 V occurs in the Y direction of the second spin orbit torque wiring layer 20, and a current of 417 mA flows in the Y direction of the second spin orbit torque wiring layer 20. The current amplification factor of the spin converter in the ninth embodiment was 1000 times.

[0101] "Tenth Example" The tenth embodiment differs from the ninth embodiment in that the spin-current conversion efficiency of each of the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 is assumed to be 1%. The other conditions of the tenth embodiment are the same as those of the ninth embodiment. In the ninth embodiment, the electromotive force generated between the first end e3 and the second end e4 is 0.01 V, and a current of 41.7 mA flows between the first end e3 and the second end e4. In other words, the current amplification factor of the spin converter according to the tenth embodiment was 100 times.

[0102] "Eleventh Example" The first spin orbit torque wiring layer 10 has a length in the X direction of 100 μm, a length in the Y direction of 1 μm, a thickness in the Z direction of 5 nm, and is made of Ta, with a resistivity of 12 mΩcm. The resistance in the X direction of the first spin orbit torque wiring layer 10 is 2400 Ω. When a voltage of 1 V is applied to the first spin orbit torque wiring layer 10 in the X direction, a current of 0.417 mA flows in the X direction of the first spin orbit torque wiring layer 10. The length in the X direction of the second spin orbit torque wiring layer 20 is 1 μm, the length in the Y direction is 100 μm, and the thickness in the Z direction is 5 nm. It is assumed that the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 are made of the same material, and that the conversion efficiency of spin to current for each layer is 10%. The resistance in the Y direction of the second spin orbit torque wiring layer 20 is 0.24 Ω. A potential difference of 0.001 V occurs in the Y direction of the second spin orbit torque wiring layer 20, and a current of 4.17 mA flows in the Y direction of the second spin orbit torque wiring layer 20. The current amplification factor of the spin converter in the eleventh embodiment was 10 times.

[0103] "Twelfth embodiment" The twelfth embodiment differs from the eleventh embodiment in that the spin-current conversion efficiency of each of the first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 is assumed to be 1%. The other conditions of the twelfth embodiment are the same as those of the eleventh embodiment. In the twelfth embodiment, the electromotive force generated between the first end e3 and the second end e4 is 0.001 V, and a current of 0.417 mA flows between the first end e3 and the second end e4. In other words, the current amplification factor of the spin converter according to the twelfth embodiment is 1.

[0104] "Thirteenth embodiment" The thirteenth embodiment differs from the twelfth embodiment in that the length of the first spin orbit torque wiring layer 10 in the Y direction is 0.1 μm, and the length of the second spin orbit torque wiring layer 20 in the X direction is 0.1 μm. The other conditions in the thirteenth embodiment are the same as those in the twelfth embodiment. The resistance in the X direction of the first spin orbit torque wiring layer 10 is 24000 Ω. When a voltage of 0.1 V is applied to the first spin orbit torque wiring layer 10 in the X direction, a current of 0.0417 mA flows in the first spin orbit torque wiring layer 10 in the X direction. The resistance in the Y direction of the second spin orbit torque wiring layer 20 is 0.24 Ω. ​​A potential difference of 0.001 V occurs in the Y direction of the second spin orbit torque wiring layer 20, and a current of 0.417 mA flows in the Y direction of the second spin orbit torque wiring layer 20. The current amplification factor of the spin converter in the thirteenth embodiment was 10 times.

[0105] "Fourteenth embodiment" In the fourteenth embodiment, a spin converter with the element structure shown in FIG. 1 was assumed. The first spin orbit torque wiring layer 10 had a length L1 in the X direction: a length L2 in the Y direction = 100:1. The second spin orbit torque wiring layer 20 had a length L3 in the X direction: a length L4 in the Y direction = 100:1. The first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 were assumed to be made of the same material, and the conversion efficiency of each spin to current was assumed to be 10%. The resistance of the first spin orbit torque wiring layer 10 in the X direction was 1 kΩ, and the resistance of the second spin orbit torque wiring layer 20 in the Y direction was 0.1 Ω. A voltage of 1 V was applied between the first end e1 and the second end e2. A current of 1 mA flows between the first end e1 and the second end e2. At this time, the electromotive force generated between the first end e3 and the second end e4 was 0.1 V, and a potential difference of 10 μV was generated between the first end e3 and the second end e4. That is, the spin converter in accordance with the fourteenth embodiment converted a potential difference of 1 V into 10 μV, and the voltage amplification factor was 1 / 10000.

[0106] "Fifteenth embodiment" In the fifteenth embodiment, a spin converter with the element structure shown in FIG. 1 was assumed. The first spin orbit torque wiring layer 10 had a length L1 in the X direction: a length L2 in the Y direction = 1:100. The second spin orbit torque wiring layer 20 had a length L3 in the X direction: a length L4 in the Y direction = 1:100. The first spin orbit torque wiring layer 10 and the second spin orbit torque wiring layer 20 were assumed to be made of the same material, and the conversion efficiency of each spin to current was assumed to be 10%. The resistance of the first spin orbit torque wiring layer 10 in the X direction was 1 kΩ, and the resistance of the second spin orbit torque wiring layer 20 in the Y direction was 1 kΩ. A voltage of 1 V was applied between the first end e1 and the second end e2. A current of 10 A flows between the first end e1 and the second end e2. At this time, the electromotive force generated between the first end e3 and the second end e4 was 0.1 V, and a potential difference of 1 kV was generated between the first end e3 and the second end e4. That is, the spin converter of the fifteenth embodiment converted a potential difference of 1 V into 1 kV, and the voltage amplification factor was 1000 times. [Explanation of symbols]

[0107] 10 First spin-orbit torque wiring layer 20 Second spin-orbit torque wiring layer 30 First spin wave propagation layer 41 1st terminal 42 2nd terminal 43 3rd terminal 44 4th terminal 45 5th terminal 46 6th terminal 50, 51, 52 power supply 60 3rd spin-orbit torque wiring layer 70 Second spin wave propagation layer 80 Connection Wiring 90 Insulating layer 100, 101, 102, 103, 110, 111 Spin converter e1, e3, e5 1st end e2, e4, e6 2nd end I1, I2, I2', I3 current

Claims

1. A first spin orbit torque wiring layer, a second spin orbit torque wiring layer, and a first spin wave propagation layer, the first spin-wave propagation layer is between the first spin orbit torque wiring layer and the second spin orbit torque wiring layer, A current or voltage is applied between a first end and a second end in a first direction of the first spin orbit torque wiring layer, and a current or voltage is output between a third end and a fourth end of the second spin orbit torque wiring layer, The spin transducer, wherein the third end and the fourth end are at different positions of the second spin orbit torque wiring layer in a second direction perpendicular to the first direction.

2. The spin transducer of claim 1 , wherein the first spin wave propagating layer is a magnetic insulator.

3. the first spin orbit torque wiring layer has a length in the first direction longer than a length in the second direction; The spin transducer of claim 1 , wherein the length of the second spin orbit torque wiring layer in the second direction is longer than the length of the first spin orbit torque wiring layer in the second direction.

4. the first spin orbit torque wiring layer has a length in the first direction longer than a length in the second direction; The spin transducer of claim 1 , wherein the second spin orbit torque wiring layer has a length in the first direction longer than a length in the second direction.

5. 2. The spin transducer of claim 1, wherein a second current flowing between the third end and the fourth end is greater than a first current flowing between the first end and the second end.

6. 2. The spin transducer of claim 1, wherein a second potential difference between the third end and the fourth end is greater than a first potential difference between the first end and the second end.

7. Further equipped with a power source, The spin transducer of claim 1 , wherein the power source applies a current or a voltage between the first end and the second end.

8. Further comprising a first terminal, a second terminal, a third terminal and a fourth terminal; The first terminal is connected to the first end, The second terminal is connected to the second end, the third terminal is connected to the third end, The spin transducer of claim 1 , wherein the fourth terminal is connected to the fourth end.

9. When viewed from the stacking direction, the overlapping surface where the first spin orbit torque wiring layer and the second spin orbit torque wiring layer overlap is (a / b). ２ ×r>1 is satisfied, a is the length of the overlapping surface in the first direction, b is the length of the overlapping surface in the second direction, r satisfies r=B / A; A is the current density of the first spin orbit torque wiring layer, The spin transducer of claim 1 , wherein B is the current density in the second spin orbit torque wiring layer.

10. Further comprising a third spin orbit torque wiring layer and a second spin wave propagation layer, the second spin-wave propagation layer is between the second spin orbit torque wiring layer and the third spin orbit torque wiring layer, A current or a voltage can be applied between a fifth end and a sixth end of the third spin orbit torque wiring layer in the first direction, the fifth end is located opposite to the first end in a stacking direction, 2. The spin transducer of claim 1, wherein a first current flowing between the first end and the second end and a third current flowing between the fifth end and the sixth end flow in opposite directions.

11. Further comprising a third spin orbit torque wiring layer, a second spin wave propagation layer, and a connection wiring, the second spin-wave propagation layer is between the second spin orbit torque wiring layer and the third spin orbit torque wiring layer, A current or a voltage can be applied between a fifth end and a sixth end of the third spin orbit torque wiring layer in the first direction, the fifth end is located opposite to the first end in a stacking direction, The spin transducer of claim 1 , wherein the first end and the fifth end are directly connected by a connecting wire.

12. Further comprising a third spin orbit torque wiring layer and a second spin wave propagation layer, the second spin-wave propagation layer is between the second spin orbit torque wiring layer and the third spin orbit torque wiring layer, 2. The spin transducer of claim 1, wherein the first spin-wave propagation layer and the second spin-wave propagation layer are made of the same material.

13. The spin transducer of claim 1 , wherein the first spin wave propagation layer has a thickness of 6 nm or more.

14. The spin transducer of claim 1 , wherein the first spin wave propagation layer has a thickness equal to or less than a spin conduction length.

15. The spin transducer of claim 1 , wherein the first spin wave propagation layer is one of a ferromagnetic material, a ferrimagnetic material, and an antiferromagnetic material.

16. The spin transducer of claim 1 , wherein one of the first spin orbit torque wiring layer and the second spin orbit torque wiring layer is a topological insulator.

Images