Active current compensation device capable of detecting malfunction

Abstract

To provide an active current compensation device for actively compensating for noise generated in a common mode in each of at least two or more large current paths.SOLUTION: An active current compensation device 100 includes a sensing unit for generating an output signal corresponding to a common-mode noise current on a large current path, an amplifier unit for amplifying an output signal to generate an amplified current, a compensation unit for generating a compensation current based on the amplified current and allowing the compensation current to pass through at least two or more large current paths, and a malfunction detection unit for detecting malfunction of the amplifier unit. At least a part of the amplifier unit and the malfunction detection unit are built in a single integrated circuit (IC) chip 500.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] An embodiment of the present invention relates to an active current compensation device capable of detecting malfunction, and relates to an active current compensation device that actively compensates for noise input in common mode on two or more large current paths connected to a power system.

[0002] An embodiment of the present invention relates to an active current compensation device including an integrated power conversion unit, which actively compensates for noise current input in common mode on two or more large current paths connected to a power system.

[0003] An embodiment of the present invention relates to an active current compensation device including an integrated circuit part and a non-integrated circuit part, and relates to an active current compensation device that actively compensates for noise input in common mode on two or more large current paths connected to a power system.

[0004] An embodiment of the present invention relates to an active current compensation device including a one-chip integrated circuit (one-chip IC), which actively compensates for noise input in common mode on two or more large current paths connected to a power system. [Background technology]

[0005] Generally, electronic devices such as home appliances, industrial electrical appliances, and electric vehicles emit noise during operation. For example, noise may be emitted through power lines due to the switching operation of a power conversion device in an electronic device. If such noise is left unchecked, it is not only harmful to the human body but also causes malfunctions or failures in surrounding components and other electronic devices. Such electronic interference caused by electronic devices to other devices is called EMI (Electromagnetic Interference), and among them, noise transmitted via wires and board wiring is called Conducted EMIssion (CE) noise.

[0006] In order for electronic devices to operate without causing damage to peripheral components and other devices, the amount of EMI noise emitted by all electronic products is strictly regulated. Therefore, most electronic products must include a noise reduction device (e.g., EMI filter) that reduces EMI noise current to meet the regulations on noise emission. For example, EMI filters are required in white goods such as air conditioners, electric vehicles, aviation, and energy storage systems (ESS). Conventional EMI filters use a common mode choke to reduce common mode (CM) noise, which is a type of conducted emission (CE) noise. A common mode (CM) choke is a passive filter that plays a role in "suppressing" common mode noise current.

[0007] On the other hand, to maintain the noise reduction performance of passive EMI filters in high-power systems, the common-mode chokes must be larger or more numerous, so the size and cost of passive EMI filters increases significantly in high-power products.

[0008] To overcome the limitations of passive EMI filters, there has been growing interest in active EMI filters. Active EMI filters can eliminate EMI noise by detecting EMI noise and generating a signal that cancels the noise through an active circuit section. Active EMI filters include an active circuit section that can generate an amplified signal in response to the detected noise signal. Summary of the Invention [Problem to be solved by the invention]

[0009] To overcome the limitations of passive EMI filters, there has been growing interest in active EMI filters. Active EMI filters can eliminate EMI noise by detecting the EMI noise and generating a signal that cancels the noise. Active EMI filters include an active circuit portion that can generate an amplified signal from the detected noise signal.

[0010] However, there are problems in that the failure of the active circuit unit is difficult to identify with the naked eye, and in that the active EMI filter only performs a noise reduction function, and the power system can still operate normally even if the active circuit unit fails, so there are problems in that it is difficult to determine the failure of the active circuit unit from the current state.

[0011] The present invention has been devised to solve the above problems, and aims to provide an active current compensation device capable of detecting malfunctions, particularly an active current compensation device in which an active circuit section and a malfunction detection circuit are both built into a single integrated circuit (IC) chip.

[0012] However, these challenges are illustrative and are not intended to limit the scope of the invention.

[0013] In an active EMI filter, the active circuitry must be supplied with power to operate. For example, the output of a switching mode power supply (SMPS) can be used as the power supply for the active circuitry. The active circuitry may require a specific voltage (e.g., 12V), and the required voltage may not exist in an existing system. In other words, there is a problem that the DC voltage input to the active circuitry differs depending on the system.

[0014] In summary, depending on the system, the SMPS may not output a specific voltage to drive the active circuit section, causing the active circuit section to become unstable.

[0015] The present invention has been devised to overcome the above problems, and an object of the present invention is to provide an active current compensation device including a built-in power conversion unit.

[0016] However, these challenges are illustrative and are not intended to limit the scope of the invention.

[0017] Meanwhile, in order to actually apply active EMI filters to electronic products, mass production of semiconductor devices is required to meet various demands. If discrete devices (or components) are used to manufacture active EMI filters for practical use, the number of devices for active circuits increases and various components are required to improve the function of the active EMI filter. Therefore, there is a problem that the size and cost of the active EMI filter increases to achieve higher performance.

[0018] Therefore, to overcome this problem, there is a need for an active EMI filter that uses customized integrated circuits (ICs) that can be used for a variety of power systems.

[0019] The present invention has been devised to overcome the above problems, and aims to provide an active current compensation device including an integrated circuit part and a non-integrated circuit part. The integrated circuit part is a single chip including essential components of the active current compensation device, and the non-integrated circuit part can be configured to realize active EMI filters of various designs.

[0020] An active EMI filter may include, for example, a BJT (Bipolar Junction Transistor). However, when a current flows through a BJT and heat is generated, the current gain of the BJT increases (or the internal resistance of the BJT decreases). This causes a positive feedback loop in which the increased current generates more heat. This positive feedback loop can cause the heat to continue to increase, potentially damaging the BJT or causing it to lose its original characteristics. This phenomenon is called thermal runaway.

[0021] When using BJTs to configure the amplifier section of an active EMI filter, this thermal runaway problem must be solved.

[0022] SUMMARY OF THE PRESENT EMBODIMENT The present invention has been devised to overcome the above-mentioned problems, and has an object to provide an active current compensation device including a one-chip integrated circuit (one-chip IC).

[0023] However, these challenges are illustrative and are not intended to limit the scope of the invention. [Means for solving the problem]

[0024] According to one embodiment of the present invention, an active current compensation device that actively compensates for noise generated in a common mode in each of at least two or more large current paths includes a sensing unit that generates an output signal corresponding to a common mode noise current on the large current path, an amplifier unit that amplifies the output signal to generate an amplified current, a compensation unit that generates a compensation current based on the amplified current and can flow the compensation current in each of the at least two or more large current paths, and a malfunction detection unit that detects malfunction of the amplifier unit, and at least a portion of the amplifier unit and the malfunction detection unit can be built into a single integrated circuit (IC) chip.

[0025] According to an embodiment, signals at two nodes included in the amplifier unit may be differentially input to the malfunction detector unit.

[0026] According to an embodiment, the amplifying unit may include a first transistor and a second transistor, and a node of the first transistor and a node of the second transistor may be connected to an input terminal of the malfunction detecting unit.

[0027] According to one embodiment, the malfunction detection unit can detect a differential DC voltage at two nodes included in the amplification unit, and detect whether the differential DC voltage is within a predetermined range.

[0028] According to one embodiment, the integrated circuit chip may include terminals for connection to a power supply device that supplies power to the amplifier unit and the malfunction detection unit, terminals for connection to a reference potential of the amplifier unit and the malfunction detection unit, and an output terminal of the malfunction detection unit.

[0029] According to one embodiment, the integrated circuit chip may include a terminal connected to a switch for selectively supplying power to the malfunction detection unit.

[0030] Other aspects, features and advantages in addition to those described above will become apparent from the following drawings, claims and detailed description of the invention.

[0031] According to one embodiment of the present invention, an active current compensation device for actively compensating for noise generated in a common mode in each of at least two or more large current paths includes a sensing unit that generates an output signal corresponding to a common mode noise current in the large current path, a power management unit that receives a first voltage from a power supply device that supplies power and converts it into a second voltage of a predetermined magnitude, an amplifier unit that is driven by the second voltage and amplifies the output signal to generate an amplified current, and a compensation unit that generates a compensation current based on the amplified current and can flow the compensation current to each of the at least two or more large current paths, and the active elements included in the amplifier unit and the active elements included in the power management unit can be built into a single integrated circuit (IC) chip.

[0032] According to one embodiment, the power management unit may include a power conversion unit that generates a switching signal for outputting a second voltage of a constant magnitude from a first voltage of an arbitrary magnitude, a feedback unit that enables the power management unit to output the second voltage of a constant magnitude by transmitting a voltage signal output from the power conversion unit back to the power conversion unit, and a filter unit that passes only the DC component of the voltage signal.

[0033] According to one embodiment, the power conversion section is integrated into the direct circuit chip, and at least a portion of the feedback section and the filter section are discrete components disposed outside the direct circuit chip.

[0034] According to one embodiment, the power conversion unit may include a regulator that generates a low DC voltage for driving an internal circuit of the power conversion unit.

[0035] According to one embodiment, the power conversion unit may include a pulse width modulation circuit that generates the switching signal using the DC low voltage provided from the regulator, and a first switch and a second switch that are selectively turned on in response to the switching signal.

[0036] According to one embodiment, the at least two or more high current paths transmit a high current supplied by a second device to a first device, and the power supply device can be a power supply device of the first device or the second device.

[0037] According to one embodiment of the present invention, an active current compensation device for actively compensating for noise generated in a common mode in each of at least two or more high current paths includes at least two or more high current paths that transmit power supplied by a second device to a first device, a sensing unit that generates an output signal corresponding to a common mode noise current on the high current paths, an amplifier unit that amplifies the output signal to generate an amplified current, and a compensation unit that generates a compensation current based on the amplified current and can flow the compensation current to each of the at least two or more high current paths, wherein the amplifier unit includes a non-integrated circuit unit and a one-chip integrated circuit unit, the non-integrated circuit unit is designed according to at least one power system of the first device and the second device, and the one-chip integrated circuit unit is independent of the rated power specifications of the first device and the second device.

[0038] According to one embodiment, the non-integrated circuit part may be designed according to the power rating of the first device.

[0039] According to an embodiment, the one-chip integrated circuit portion may include a first transistor, a second transistor, and one or more resistors.

[0040] According to one embodiment, the non-integrated circuit part may include a first impedance Z1 that connects the emitter node sides of the first transistor and the second transistor to the input terminal of the compensation part, and a second impedance Z2 that connects the base node sides of the first transistor and the second transistor to the input terminal of the compensation part.

[0041] According to an embodiment, the sensing unit includes a sensing transformer, and the compensation unit includes a compensation transformer, a value of the first impedance or a value of the second impedance is determined based on a winding ratio of the sensing transformer and the compensation transformer and a target current gain of the amplifier unit, and a configuration of the one-chip direct circuit unit may be independent of the winding ratio and the target current gain.

[0042] According to one embodiment, depending on the design of the first impedance and the second impedance, the one-chip integrated circuit part can be used for the first device of various power systems.

[0043] According to one embodiment of the present invention, an active current compensation device for actively compensating for noise generated in a common mode in each of at least two or more large current paths includes a sensing unit that generates an output signal corresponding to a common mode noise current in the large current path, an amplifier unit that amplifies the output signal to generate an amplified current, and a compensation unit that generates a compensation current based on the amplified current and can pass the compensation current through each of the at least two or more large current paths, wherein the amplifier unit includes a non-integrated circuit unit and a one-chip integrated circuit, and the one-chip integrated circuit has an active element with an element characteristic that changes in response to a change in temperature built therein, and the one-chip integrated circuit can be designed such that the amplifier unit maintains performance within a certain range even when the temperature changes.

[0044] According to one embodiment, an npn BJT and a pnp BJT are built into the one-chip integrated circuit, and a diode can be connected between the base node of the npn BJT and the base node of the pnp BJT.

[0045] According to one embodiment, a resistor may be connected between the emitter node of the npn BJT and the emitter node of the pnp BJT.

[0046] According to one embodiment, the diode may serve to reduce the emitter current through the resistor.

[0047] According to one embodiment, the diode and the resistor can adjust the DC bias current of the npn BJT and the pnp BJT.

[0048] According to one embodiment, the emitter current through the resistor can be maintained within a predetermined range as temperature changes.

[0049] Other aspects, features and advantages in addition to those described above will become apparent from the following drawings, claims and detailed description of the invention. Effect of the Invention

[0050] The active current compensation apparatus according to various embodiments of the present invention configured as described above can reduce the cost, area, volume, weight, and heat generation in high power systems compared to passive filters configured with CM chokes.

[0051] Additionally, the active current compensation apparatus according to various embodiments of the present invention is capable of detecting failure or malfunction of the active circuitry.

[0052] In addition, in various embodiments of the present invention, a single integrated circuit (IC) chip can be provided in which both the active circuit section and the malfunction detection section are built in. By building the malfunction detection section into a chip in which the active circuit section is integrated, the size and cost can be reduced compared to a case in which the malfunction detection section is separately configured using general practical elements.

[0053] Furthermore, by integrating the active circuit section and the malfunction detection section into a single IC chip, the IC chip can be put to practical use as an independent component with versatility.

[0054] In addition, a current compensation device including the IC chip can be manufactured and put into practical use as an independent module, and such a current compensation device can detect malfunctions as an independent module regardless of the characteristics of the surrounding electrical system.

[0055] The active current compensation devices according to the various embodiments of the present invention configured as described above can be applied to any of various systems by having a built-in power conversion unit.

[0056] In various embodiments of the present invention, the active circuitry and power conversion unit are integrated into a single integrated circuit (IC) chip, which can be used as an independent component with versatility.

[0057] In addition, a current compensation device including the IC chip can be manufactured as an independent module for practical use. An active circuit unit included in such a current compensation device can stably operate regardless of the characteristics of the surrounding electrical system.

[0058] The active current compensation apparatus according to various embodiments of the present invention configured as described above can reduce the cost, area, volume, weight, and heat generation in high power systems compared to passive filters configured with CM chokes.

[0059] Additionally, the active current compensation devices according to various embodiments of the present invention are minimized in size compared to those including discrete semiconductor devices.

[0060] Additionally, the integrated circuit portion according to various embodiments of the present invention may be universally applied to active current compensation devices of various designs.

[0061] In addition, the active current compensation apparatus including the integrated circuit unit according to various embodiments of the present invention can be used in various power electronic products regardless of the power rating. Therefore, the active current compensation apparatus according to various embodiments of the present invention can be extended to high power and high-noise systems.

[0062] Additionally, active current compensation devices including integrated circuit portions according to various embodiments of the present invention may be easily mass produced.

[0063] Furthermore, the active current compensation device and / or one-chip integrated circuit unit according to various embodiments of the present invention can be put into practical use as an independent module with versatility.

[0064] The active current compensation device according to the embodiment of the present invention configured as described above can reduce the cost, area, volume, weight, and heat generation in a high power system compared to a passive filter configured with a CM choke.

[0065] In addition, the active current compensation device according to the embodiment of the present invention can prevent thermal runaway. The active current compensation device according to the embodiment of the present invention can maintain a constant current range even when the temperature changes by using both positive feedback and negative feedback for the temperature of the BJT.

[0066] In addition, in the active current compensation device according to the embodiment of the present invention, since elements having temperature characteristics are formed in a one-chip integrated circuit (one-chip IC) and share the temperature, it is easy to predict the characteristics of the elements according to temperature.

[0067] Therefore, it is possible to design an active circuit section (or amplifier section) that is controllable and predictable even with temperature changes.

[0068] The amplifier according to the embodiment of the present invention includes a one-chip integrated circuit, and therefore can be designed to have controllable current-voltage (IV) characteristics, as compared to a case where the amplifier is composed of practical discrete elements. That is, the one-chip integrated circuit according to the embodiment of the present invention can be customized. That is, the current and voltage inside the one-chip integrated circuit can be controlled.

[0069] In addition, the one-chip integrated circuit and the active current compensation device including the same according to the embodiment of the present invention may have a small increase in production cost even in mass production, and may have a small increase in size due to an increase in the number of semiconductor elements.

[0070] Of course, the scope of the present invention is not limited to such effects. [Brief description of the drawings]

[0071] [Figure 1] 1 is a diagram illustrating a schematic configuration of a system including an active current compensation device 100 according to an embodiment of the present invention. [Diagram 2] 1 is a diagram showing the inclusion relationship of an amplifier section 130, a malfunction detector section 180, and an IC chip 500 according to an embodiment of the present invention. [Diagram 3] FIG. 2 is a diagram showing a more specific example of the embodiment shown in FIG. 1, and is a diagram showing an outline of an active current compensation device 100A according to one embodiment of the present invention. [Figure 4] FIG. 4 is a diagram showing a more specific example of the embodiment shown in FIG. 3, and is a diagram showing an outline of an active current compensation device 100A-1 according to one embodiment of the present invention. [Diagram 5] FIG. 4 is a diagram showing another more specific example of the embodiment shown in FIG. 3, and is a diagram showing an active current compensation device 100A-2 according to one embodiment of the present invention. [Figure 6] FIG. 2 is a diagram showing a functional configuration of a malfunction detection section 180 according to an embodiment of the present invention. [Figure 7] FIG. 1 is a schematic diagram of a logic circuit 184 according to one embodiment of the present invention. [Figure 8] 2 is a circuit diagram of an active element section 132 and a malfunction detection section 180 according to an embodiment of the present invention. FIG. [Figure 9] FIG. 11 is a diagram illustrating a schematic configuration of an active current compensation device 100B according to another embodiment of the present invention. [Figure 10] 1 is a diagram illustrating a schematic configuration of a system including an active current compensation device 100 according to an embodiment of the present invention. [Figure 11] 2 is a diagram illustrating an example of a functional configuration of an amplifier unit 130 and a power management unit 180 according to an embodiment of the present invention. [Figure 12] FIG. 11 is a diagram showing a more specific example of the embodiment shown in FIG. 10, and is a diagram showing an outline of an active current compensation device 100A according to one embodiment of the present invention. [Figure 13]FIG. 13 is a diagram showing a more specific example of the embodiment shown in FIG. 12, and is a diagram showing an outline of an active current compensation device 100A-1 according to one embodiment of the present invention. [Figure 14] FIG. 1 is a schematic diagram of a power manager 180 according to an embodiment of the present invention. [Figure 15] FIG. 15 is a diagram illustrating a more specific example of the power conversion unit 181 illustrated in FIG. [Figure 16] FIG. 13 is a diagram illustrating a schematic configuration of an active current compensation device 100A-2 according to another embodiment of the present invention. [Figure 17] 1 is a diagram illustrating a schematic configuration of a system including an active current compensation device 100 according to an embodiment of the present invention. [Figure 18] FIG. 18 is a diagram showing a more specific example of the embodiment shown in FIG. 17, and is a diagram showing an outline of an active current compensation device 100A according to one embodiment of the present invention. [Figure 19] FIG. 19 is a diagram showing a more specific example of the embodiment shown in FIG. 18, and is a diagram showing an outline of an active current compensation device 100A-1 according to one embodiment of the present invention. [Figure 20] FIG. 13 is a diagram illustrating a schematic configuration of an active current compensation device 100A-2 according to another embodiment of the present invention. [Figure 21] FIG. 13 is a diagram illustrating a schematic configuration of an active current compensation device 100A-3 according to still another embodiment of the present invention. [Figure 22] FIG. 13 is a diagram illustrating a schematic configuration of an active current compensation device 100B according to still another embodiment of the present invention. [Figure 23] 1 is a diagram illustrating a schematic configuration of a system including an active current compensation device 100 according to an embodiment of the present invention. [Figure 24] FIG. 24 shows a more specific example of the embodiment shown in FIG. 23, and is a diagram illustrating roughly an active current compensation device 100A according to one embodiment of the present invention. [Diagram 25] FIG. 25 is a diagram showing a more specific example of the embodiment shown in FIG. 24, and is a diagram showing an active current compensation device 100A-1 according to one embodiment of the present invention. [Figure 26] FIG. 1 is a schematic diagram of a one-chip integrated circuit (one-chip IC) 131A according to an embodiment of the present invention. [Figure 27] 27 is a diagram showing a simulation result of bias voltage and current as a function of temperature of the one-chip integrated circuit 131A shown in FIG. 26. [Figure 28] FIG. 13 is a diagram illustrating a schematic configuration of an active current compensation device 100A-2 according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0072] The present invention can be modified in various ways and can have various embodiments, and a specific embodiment will be illustrated in the drawings and described in detail. The effects and features of the present invention, as well as methods for achieving them, will become apparent from the following detailed description of the embodiments in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various forms.

[0073] Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, the same or corresponding components are given the same reference numerals, and duplicate descriptions thereof will be omitted.

[0074] In the following embodiments, the terms "first", "second", etc. are not used in a limiting sense, but are used to distinguish one component from another. In the following embodiments, the singular expression includes the plural expression unless it has a clearly different meaning in the context. In the following embodiments, the terms "include" and "have" mean that the features or components described in the specification are present, and do not preclude the possibility that one or more other features or components are added. In the drawings, the size of the components may be exaggerated or reduced for the convenience of explanation. In the following embodiments, when a component, part, unit, module, etc. is said to be connected, it includes not only the case where the components, parts, units, modules are directly connected, but also the case where the components, parts, units, modules are indirectly connected by interposing another component, part, unit, module between them.

[0075] Meanwhile, the embodiments described in the detailed description of this specification may be conveniently classified into one of four embodiment classifications. The four embodiment classifications are as follows: [1] Active current compensation device capable of detecting malfunctions [2] An active current compensation device including a built-in power conversion unit [3] An active current compensation device including an integrated circuit part and a non-integrated circuit part [4] An active current compensation device including a single-chip integrated circuit

[0076] The above four classifications of embodiments [1] to [4] are distinguished for the sake of convenience of explanation, and it goes without saying that each embodiment described in the specification may belong to multiple classifications.

[0077] In addition, the drawings attached to this specification may belong to one of the classifications of the embodiments. More specifically, FIGS. 1 to 9 may belong to classification [1], FIGS. 10 to 16 may belong to classification [2], FIGS. 17 to 22 may belong to classification [3], and FIGS. 23 to 28 may belong to classification [4]. In this specification, the same reference numerals may be given to the same or corresponding components in drawings in the same classification. However, the same reference numerals may be given to the same components in drawings in different classifications. For example, the malfunction detection unit 180 in FIG. 1 belonging to classification [1] and the power management unit 180 in FIG. 10 belonging to classification [2] may be given the same reference numerals but may refer to different components.

[0078] [1] Active current compensation device capable of detecting malfunctions 1 is a diagram illustrating a schematic configuration of a system including an active current compensation apparatus 100 according to an embodiment of the present invention. The active current compensation apparatus 100 can actively compensate for first currents I11 and I12 (e.g., EMI noise currents) input to a common mode (CM) from a first device 300 via two or more large current paths 111 and 112.

[0079] Referring to FIG. 1, the active current compensation device 100 may include a sensing unit 120, an amplifying unit 130, a malfunction detection unit 180, and a compensating unit 160.

[0080] In this specification, the first device 300 may be various types of power systems that use the power source supplied by the second device 200. For example, the first device 300 may be a load that is driven by the power source supplied by the second device 200. In addition, the first device 300 may be a load (e.g., an electric vehicle) that stores energy using the power source supplied by the second device 200 and is driven by using the stored energy. However, the first device 300 is not limited thereto.

[0081] The second device 200 in this specification may be a system of various forms for supplying power in the form of current and / or voltage to the first device 300. For example, the second device 200 may be a device that generates and supplies power, or may be a device that supplies power generated by another device (e.g., an electric vehicle charging device). Of course, the second device 200 may be a device that supplies stored energy. However, the second device 200 is not limited thereto.

[0082] A power converter may be located on the first device 300 side. For example, the first currents I11 and I12 may be input to the current compensation device 100 by a switching operation of the power converter. That is, the first device 300 side may correspond to a noise source, and the second device 200 side may correspond to a noise receiver.

[0083] The two or more high current paths 111, 112 may be paths that transmit the power source supplied by the second device 200, i.e., the second currents I21, I22, to the first device 300, and may be, for example, power lines. For example, each of the two or more high current paths 111, 112 may be a live line and a neutral line. At least a part of the high current paths 111, 112 may pass through the current compensation device 100. The second currents I21, I22 may be AC ​​currents having a frequency in a second frequency band. The second frequency band may be, for example, a 50 Hz to 60 Hz band.

[0084] In addition, the two or more high current paths 111, 112 may be paths through which noise generated in the first device 300, i.e., the first currents I11, I12, are transmitted to the second device 200. The first currents I11, I12 may be input in a common mode to each of the two or more high current paths 111, 112. The first currents I11, I12 may be currents unintentionally generated in the first device 300 due to various causes. For example, the first currents I11, I12 may be noise currents generated by a virtual capacitance between the first device 300 and the surrounding environment. Alternatively, the first currents I11, I12 may be noise currents generated by a switching operation of a power conversion device of the first device 300. The first currents I11, I12 may be currents having a frequency in a first frequency band. The first frequency band may be a frequency band higher than the above-mentioned second frequency band. The first frequency band may be, for example, a 150 KHz to 30 MHz band.

[0085] Meanwhile, the two or more high current paths 111, 112 may include two paths as shown in Fig. 1, may include three paths as shown in Fig. 9, or may include four paths. The number of high current paths 111, 112 may vary depending on the type and / or form of the power source used by the first device 300 and / or the second device 200.

[0086] The sensing unit 120 may detect the first currents I11 and I12 on the two or more high current paths 111 and 112 and generate output signals corresponding to the first currents I11 and I12. That is, the sensing unit 120 may mean a means for detecting the first currents I11 and I12 on the high current paths 111 and 112. At least a part of the high current paths 111 and 112 may pass through the sensing unit 120 to sense the first currents I11 and I12, but a part of the sensing unit 120 where an output signal is generated by sensing may be insulated from the high current paths 111 and 112. For example, the sensing unit 120 may be embodied as a sensing transformer. The sensing transformer may detect the first currents I11 and I12 on the high current paths 111 and 112 while being insulated from the high current paths 111 and 112.

[0087] According to an embodiment, the sensing unit 120 may be differentially connected to an input terminal of the amplification unit 130 .

[0088] The amplifier 130 is electrically connected to the sensing unit 120 and may amplify an output signal output from the sensing unit 120 to generate an amplified output signal. In the present invention, "amplification" by the amplifier 130 may mean adjusting the magnitude and / or phase of an object to be amplified. The amplifier 130 may be embodied by various means and may include active elements. In one embodiment, the amplifier 130 may include a BJT (Bipolar Junction Transistor). For example, the amplifier 130 may include a plurality of passive elements such as resistors and capacitors in addition to the BJT. However, the present invention is not limited thereto, and any means for "amplification" described in the present invention may be used without limitation as the amplifier 130 of the present invention. The second reference potential 602 of the amplifier 130 and the first reference potential 601 of the current compensation device 100 may be distinguished from each other.

[0089] The malfunction detection unit 180 may detect a malfunction or failure of the amplifier unit 130. According to an embodiment, signals of two nodes included in the amplifier unit 130 may be input to the malfunction detection unit 180 in a differential manner. The malfunction detection unit 180 may detect a differential signal between the two nodes included in the amplifier unit 130. The malfunction detection unit 180 may detect a malfunction of the amplifier unit 130 using the input differential signal. For example, the malfunction detection unit 180 may detect a malfunction of the amplifier unit 130 by determining whether the differential signal satisfies a predetermined condition. The malfunction detection unit 180 may output a signal indicating whether the amplifier unit 130 has failed. According to an embodiment, the malfunction detection unit 180 may include an active element.

[0090] At least a part of the amplifier unit 130 and the malfunction detector unit 180 can be physically built into one integrated circuit (IC) chip 500.

[0091] FIG. 2 is a diagram showing the inclusion relationship of the amplifier section 130, the malfunction detector section 180, and the IC chip 500 according to an embodiment of the present invention.

[0092] 2, the amplifier unit 130 may include a passive element unit 131 and an active element unit 132. The passive element unit 131 is composed of only passive elements, and the active element unit 132 includes active elements. In one embodiment, the active element unit 132 may further include passive elements in addition to active elements. An example of a detailed configuration of the amplifier unit 130 including the passive element unit 131 and the active element unit 132 will be described later with reference to FIGS. 4 and 5.

[0093] 1 and 2, a combination of the passive element unit 131 and the active element unit 132 may function to generate an amplified signal from an output signal output from the sensing unit 120. The amplified signal may be input to the compensation unit 160.

[0094] As described above, signals of two nodes included in the amplifier unit 130 may be differentially input to the malfunction detection unit 180. The malfunction detection unit 180 may detect the differential signal of the two nodes. The two nodes may be two nodes included in the active element unit 132. In one embodiment, the two nodes may also be connected to the passive element unit 131.

[0095] In one embodiment, the active element unit 132 and the malfunction detection unit 180 of the amplifier unit 130 may be physically integrated into one IC chip 500. However, this is merely one embodiment, and it goes without saying that in other embodiments, the passive element unit 131, the active element unit 132 and the malfunction detection unit 80 of the amplifier unit 130 may be physically integrated into one IC chip 500.

[0096] The malfunction detection unit 180 may include an active element. Here, the reference potential of the malfunction detection unit 180 may be the same as a second reference potential 602 which is a reference potential of the amplification unit 130. The reference potential of the malfunction detection unit 180 may be different from a first reference potential 601 which is a reference potential of the current compensation device 100 (for example, a reference potential of the compensation unit 160).

[0097] The amplifier 130 and the malfunction detector 180 may be supplied with power from a power supply device 400, which is distinct from the first device 300 and / or the second device 200. The amplifier 130 may receive power from the power supply device 400 and amplify an output signal output from the sensing unit 120 to generate an amplified current. The malfunction detector 180 may receive power from a power supply device 600 and generate an output signal indicating whether a differential input signal from the amplifier 130 is within a predetermined range. The output signal may indicate whether the amplifier 130 has failed.

[0098] The power supply device 400 may be a device that receives power from a power source independent of the first device 300 and the second device 200 and generates input power for the amplifier unit 130 and the malfunction detection unit 180. Alternatively, the power supply device 400 may be a device that receives power from one of the first device 300 and the second device 200 and generates input power for the amplifier unit 130 and the malfunction detection unit 180.

[0099] The IC chip 500 may include a terminal t1 for connection to the power supply device 400, a terminal t2 for connection to the second reference potential 602, and a terminal t3 for outputting an output signal of the malfunction detection unit 180. The IC chip 500 may further include other terminals.

[0100] For example, in an embodiment in which only the active element unit 132 of the amplifier unit 130 excluding the passive element unit 131 is integrated on the IC chip 500 together with the malfunction detection unit 180 , the other terminal may be connected to the passive element unit 131 .

[0101] As another example, in an embodiment in which the passive element unit 131, the active element unit 132 and the malfunction detection unit 180 included in the amplifier unit 130 are all integrated into a single IC chip 500, the other terminals can be connected to the output terminal of the sensing unit 120 and the input terminal of the compensation unit 160.

[0102] The compensating unit 160 may generate a compensation current based on the output signal amplified by the amplifying unit 130. An output side of the compensating unit 160 may be connected to the high current paths 111 and 112 to pass compensation currents IC1 and IC2 through the high current paths 111 and 112, but may be insulated from the amplifying unit 130. For example, the compensating unit 160 may include a compensation transformer for the insulation. For example, the output signal of the amplifying unit 130 may flow through a primary side of the compensating transformer, and a compensation current based on the output signal may be generated on a secondary side of the compensating transformer.

[0103] In order to cancel out the first currents I11 and I12, the compensating unit 160 may inject compensation currents IC1 and IC2 into the large current paths 111 and 112 through the two or more large current paths 111 and 112, respectively. The compensation currents IC1 and IC2 may have the same magnitude and opposite phase as the first currents I11 and I12.

[0104] Fig. 3 is a diagram illustrating a more specific example of the embodiment shown in Fig. 1, and is a diagram illustrating an active current compensation apparatus 100A according to one embodiment of the present invention. The active current compensation apparatus 100A can actively compensate for first currents I11 and I12 (e.g., noise currents) input in common mode to two large current paths 111 and 112 connected to a first device 300, respectively.

[0105] Referring to FIG. 3, the active current compensation device 100A may include a sensing transformer 120A, an amplifier unit 130, a malfunction detection unit 180, and a compensation unit 160A.

[0106] In an embodiment, the sensing unit 120 may include a sensing transformer 120A. In this case, the sensing transformer 120A may be a means for detecting the first currents I11 and I12 on the large current paths 111 and 112 while being insulated from the large current paths 111 and 112. The sensing transformer 120A may sense the first currents I11 and I12, which are noise currents input from the first device 300 side to the large current paths 111 and 112 (e.g., power lines).

[0107] The sensing transformer 120A may include a primary side 121A disposed on the large current paths 111 and 112 and a secondary side 122A differentially connected to an input terminal of the amplifier unit 130. The sensing transformer 120A may generate an induced current in a secondary side 122A (e.g., a secondary winding) based on a magnetic flux density induced by a first current I11 and I12 in the primary side 121A (e.g., a primary winding) disposed on the large current paths 111 and 112. The primary side 121A of the sensing transformer 120A may be, for example, a winding in which the first large current path 111 and the second large current path 112 are wound around one core. However, the primary side 121A of the sensing transformer 120A may be a type in which the first large current path 111 and the second large current path 112 pass through the core.

[0108] Specifically, the magnetic flux density induced by the first current I11 on the first large current path 111 (e.g., live line) and the magnetic flux density induced by the first current I12 on the second large current path 112 (e.g., neutral line) can be configured to overlap (or reinforce) each other. At this time, the second currents I21 and I22 also flow through the large current paths 111 and 112, but the magnetic flux density induced by the second current I21 on the first large current path 111 and the magnetic flux density induced by the first current I22 on the second large current path 112 can be configured to cancel each other out. Also, as an example, the sensing transformer 120A can be configured so that the magnitude of the magnetic flux density induced by the first currents I11, I12 in a first frequency band (e.g., a band having a range of 150 KHz to 30 MHz) is greater than the magnitude of the magnetic flux density induced by the second currents I21, I22 in a second frequency band (e.g., a band having a range of 50 Hz to 60 Hz).

[0109] In this manner, the sensing transformer 120A is configured to cancel out the magnetic flux densities induced by the second currents I21 and I22, so that only the first currents I11 and I12 are detected. That is, the current induced in the secondary side 122A of the sensing transformer 120A may be a current obtained by converting the first currents I11 and I12 at a constant rate.

[0110] For example, in the sensing transformer 120A, if the winding ratio of the primary side 121A to the secondary side 122A is 1:Nsen and the self-inductance of the primary side 121A of the sensing transformer 120A is Lsen, the secondary side 122A can have a self-inductance of Nsen2.Lsen. At this time, the current induced in the secondary side 122A is 1 / Nsen times the first current I11, I12. For example, the primary side 121A and the secondary side 122A of the sensing transformer 120A can be coupled with a coupling coefficient of ksen.

[0111] The secondary side 122A of the sensing transformer 120A may be connected to an input terminal of the amplifier unit 130. For example, the secondary side 122A of the sensing transformer 120A may be differentially connected to the input terminal of the amplifier unit 130 to supply an induced current to the amplifier unit 130.

[0112] The amplifier 130 may amplify the current sensed by the sensing transformer 120A and induced in the secondary side 122A. For example, the amplifier 130 may amplify the magnitude of the induced current at a certain rate and / or adjust the phase.

[0113] The malfunction detection unit 180 may detect a malfunction or failure of the amplification unit 130. According to an embodiment, a differential signal between two nodes included in the amplification unit 130 may be input to the malfunction detection unit 180. The malfunction detection unit 180 may detect whether the input differential signal is within a predetermined range, thereby detecting whether the amplification unit 130 has failed. The malfunction detection unit 180 may output a signal indicating whether the amplification unit 130 has failed via an output terminal t3. The malfunction detection unit 180 may include an active element.

[0114] According to various embodiments of the present invention, at least a part of the amplifier section 130 and the malfunction detector section 180 can be physically integrated into one IC chip 500.

[0115] The amplifier 130 and the malfunction detector 180 may be connected to a second reference potential 602, which may be distinguished from a first reference potential 601 of the current compensation device 100 (or the compensation unit 160A). The amplifier 130 and the malfunction detector 180 may be connected to the power supply device 400.

[0116] The IC chip 500 may include a terminal t1 for connection to the power supply device 400, a terminal t2 for connection to the second reference potential 602, and a terminal t3 for outputting the output signal of the malfunction detection section 180.

[0117] According to an embodiment, only the active element unit 132 of the amplifier unit 130, excluding the passive element unit 131, may be integrated into the IC chip 500 together with the malfunction detection unit 180. In this case, the IC chip 500 may further include a terminal for connection with the passive element unit 131.

[0118] According to another embodiment, both the passive element unit 131 and the active element unit 132 included in the amplifier unit 130 may be integrated into the IC chip 500 together with the malfunction detection unit 180. In this case, the IC chip 500 may further include a terminal to be connected to an output terminal of the sensing unit 120 and a terminal to be connected to an input terminal of the compensation unit 160.

[0119] The compensating unit 160A may be an example of the above-mentioned compensating unit 160. The compensating unit 160A may include a compensating transformer 140A and a compensating capacitor unit 150A. The amplified current amplified by the above-mentioned amplifying unit 130 flows to the primary side 141A of the compensating transformer 140A.

[0120] Compensation transformer 140A can be a means for isolating amplifier unit 130 including active elements from high current paths 111, 112. In other words, compensation transformer 140A can be a means for generating (on secondary side 142A) a compensation current to be injected into high current paths 111, 112 based on the amplified current while being insulated from high current paths 111, 112.

[0121] The compensation transformer 140A may include a primary side 141A differentially connected to the output terminal of the amplifier 130, and a secondary side 142A connected to the large current paths 111 and 112. The compensation transformer 140A may induce a compensation current in the secondary side 142A (e.g., a secondary winding) based on a magnetic flux density induced by an amplified current flowing in the primary side 141A (e.g., a primary winding).

[0122] At this time, the secondary side 142A may be disposed on a path connecting the compensation capacitor unit 150A described later and a first reference potential 601 of the current compensation apparatus 100A. That is, one end of the secondary side 142A may be connected to the large current paths 111 and 112 via the compensation capacitor unit 150A, and the other end of the secondary side 142A may be connected to the first reference potential 601 of the active current compensation apparatus 100A. Meanwhile, the primary side 141A of the compensation transformer 140A, the amplifier unit 130, the malfunction detection unit 180, and the secondary side 122A of the sensing transformer 120A may be connected to a second reference potential 602 that is distinguished from the remaining components of the active current compensation apparatus 100A. The first reference potential 601 of the current compensation apparatus 100A may be distinguished from the second reference potential 602 of the amplifier unit 130.

[0123] Therefore, in one embodiment, the present invention uses a different reference potential (i.e., the second reference potential 602) for the components that generate the compensation current from the remaining components, and uses a separate power supply device 400, allowing the components that generate the compensation current to operate in an isolated state, thereby improving the reliability of the active current compensation device 100A.

[0124] In the compensation transformer 140A, if the winding ratio of the primary side 141A to the secondary side 142A is 1:Ninj, and the self-inductance of the primary side 141A of the compensation transformer 140A is Linj, the secondary side 142A can have a self-inductance of Ninj2.Linj. At this time, the current induced in the secondary side 142A is 1 / Ninj times the current (i.e., the amplified current) flowing in the primary side 141A. The primary side 141A and the secondary side 142A of the compensation transformer 140A can be coupled with a coupling coefficient of kinj.

[0125] The current converted through the compensation transformer 140A can be injected as compensation currents IC1, IC2 into the large current paths 111, 112 (e.g., power lines) through the compensation capacitor unit 150A. Therefore, the compensation currents IC1, IC2 can have the same magnitude and opposite phase as the first currents I11, I12 to cancel the first currents I11, I12. Therefore, the magnitude of the current gain of the amplifier unit 130 can be designed to be Nsen.Ninj.

[0126] The compensation capacitor unit 150A can provide a path through which the current generated by the compensation transformer 140A flows to each of the two large current paths 111 and 112, as described above.

[0127] The compensation capacitor unit 150A may include two Y-capacitors (Y-capacitors) having one end connected to the secondary side 142A of the compensation transformer 140A and the other end connected to the high current paths 111 and 112. One end of each of the two Y-caps may share a node connected to the secondary side 142A of the compensation transformer 140A, and the opposite ends of each of the two Y-caps may have nodes connected to the first high current path 111 and the second high current path 112, respectively.

[0128] The compensation capacitor unit 150A can cause the compensation currents IC1 and IC2 induced by the compensation transformer 140A to flow through the power line. The compensation currents IC1 and IC2 compensate (or cancel) the first currents I11 and I12, so that the current compensation device 100A can reduce noise.

[0129] On the other hand, the compensation capacitor section 150A can be configured so that the current IL1 flowing between the two large current paths 111, 112 via the compensation capacitor is less than a first threshold value. Also, the compensation capacitor section 150A can be configured so that the current IL2 flowing between each of the two large current paths 111, 112 and the first reference potential 601 via the compensation capacitor is less than a second threshold value.

[0130] The active current compensation device 100A can achieve an isolated structure by using the compensation transformer 140A and the sensing transformer 120A.

[0131] Fig. 4 shows a more specific example of the embodiment shown in Fig. 3, and is a diagram illustrating an active current compensation apparatus 100A-1 according to an embodiment of the present invention. The active current compensation apparatus 100A-1 shown in Fig. 4 is an example of the active current compensation apparatus 100A shown in Fig. 3. An amplifier unit 130A-1 included in the active current compensation apparatus 100A-1 is an example of the amplifier unit 130 of the active current compensation apparatus 100A.

[0132] The amplifier 130A-1 included in the active current compensation device 100A-1 according to an embodiment may include a passive element section and an active element section. The passive element section of the amplifier 130A-1 may include Cb, Ce, Z1, Z2, and Cdc. The active element section of the amplifier 130A-1 may include a first transistor 11, a second transistor 12, a diode 13, Rnpn, Rpnp, and Re.

[0133] In one embodiment, the first transistor 11 may be an npn BJT, and the second transistor 12 may be a pnp BJT. For example, the amplifier section 130A-1 may have a push-pull amplifier structure including an npn BJT and a pnp BJT.

[0134] An induced current induced in the secondary side 122A by the sensing transformer 120A may be differentially input to the amplifier 130A-1. Cb and Ce included in the amplifier 130A-1 may selectively couple only alternating current (AC) signals.

[0135] The power supply device 400 supplies a direct current (DC) voltage Vdd with respect to a second reference potential 602 in order to drive the amplifier section 130A-1 and the malfunction detection section 180. Cdc is a DC decoupling capacitor for Vdd, and can be connected in parallel between the power supply device 400 and the second reference potential 602. Cdc can selectively couple only AC signals between the collectors of both the first transistor 11 (e.g., npn BJT) and the second transistor 12 (e.g., pnp BJT).

[0136] In the active element section of the amplifier section 130A-1, Rnpn, Rpnp, and Re can adjust the operating points of the first transistor 11 and the second transistor 12. Rnpn is a collector terminal of the first transistor 11 (e.g., npn BJT) and can connect the power supply device 400 terminal and the base terminal of the first transistor 11 (e.g., npn BJT). Rpnp is a collector terminal of the second transistor 12 (e.g., pnp BJT) and can connect the second reference potential 602 and the base terminal of the second transistor 12 (e.g., pnp BJT). Re can connect the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12.

[0137] The secondary side 122A of the sensing transformer 120A according to an embodiment may be connected between the base side and the emitter side of the first transistor 11 and the second transistor 12. The primary side 141A of the compensation transformer 140A according to an embodiment may be connected between the collector side and the base side of the first transistor 11 and the second transistor 12. Here, the connection includes the case where the connection is indirect. The amplifier unit 130A-1 according to an embodiment may have a recurrent structure that injects the output current again into the bases of the first transistor 11 and the second transistor 12. Because of the recurrent structure, the amplifier unit 130A-1 may stably obtain a constant current gain for the operation of the active current compensation device 100A-1.

[0138] When the input voltage of the noise signal amplifier 130A-1 is a positive swing greater than 0, the first transistor 11 (e.g., an npn BJT) can operate. At this time, the operating current can flow via a first path through the first transistor 11. When the input voltage of the noise signal amplifier 130A-1 is a negative swing less than 0, the second transistor 12 (e.g., a pnp BJT) can operate. At this time, the operating current can flow via a second path through the second transistor 12.

[0139] In various embodiments, it may be desirable to use a power supply unit 400 with as high a voltage as possible, since there may be a large noise level to compensate for according to the first device 300. For example, the power supply unit 400 may be separate from the first device 300 and the second device 200.

[0140] The nodes of the first transistor 11 and the second transistor 12 can swing widely in a common mode by supplying power from the power supply device 400. For example, the voltages at the base node and the emitter node of the first transistor 11 and the second transistor 12 can swing in a common mode.

[0141] By checking whether the active element section of the amplifier section 130A-1 operates normally as described above, it is possible to check whether the active current compensation device 100A-1 itself operates normally. In other words, by checking whether the DC bias of the amplifier section 130A-1 is normal, it is possible to check whether the active current compensation device 100A-1 operates normally.

[0142] As described above, since the voltage swings widely in common mode at the node of the first transistor 11 and the second transistor 12, it is possible to sense a malfunction by detecting only the differential DC voltage between the first transistor 11 and the second transistor 12. That is, in order to sense a malfunction of the amplifier unit 130A-1, it is possible to selectively detect only the differential DC voltage between the first transistor 11 and the second transistor 12.

[0143] For example, when the differential DC voltage between one node of the first transistor 11 and one node of the second transistor 12 satisfies a predetermined condition, it can be determined that the active current compensation device 100A-1 is normal.

[0144] Therefore, the malfunction detection unit 180 according to an embodiment can output a signal indicating a malfunction of the amplification unit 130A-1, using a differential DC voltage between two nodes included in the amplification unit 130A-1.

[0145] For example, a differential signal between one node of the first transistor 11 and one node of the second transistor 12 can be input to the malfunction detection unit 180. In one embodiment, the differential signal can be a differential DC voltage between the emitter of the first transistor 11 and the emitter of the second transistor 12.

[0146] According to one embodiment, the malfunction detection unit 180 can output a signal indicating normality via the output terminal t3 when the differential DC voltage between the emitter of the first transistor 11 and the emitter of the second transistor 12 is within a predetermined range. The malfunction detection unit 180 can output a signal indicating a failure via the output terminal t3 when the differential DC voltage is outside the predetermined range.

[0147] In an embodiment of the present invention, at least a part of the amplifier section 130A-1 and the malfunction detector section 180 can be physically integrated into one IC chip 500A-1.

[0148] In one embodiment, the active element section of the amplifier section 130A-1 and the malfunction detection section 180 can be integrated into one IC chip 500A-1 as shown in FIG. 4. For example, the first transistor 11, the second transistor 12, the diode 13, Rnpn, Rpnp, Re, and the malfunction detection section 180 of the active element section can be integrated into one IC chip 500A-1. In this case, the IC chip 500A-1 can include a terminal t1 for connecting to the power supply device 400, a terminal t2 for connecting to the second reference potential 602, a terminal t3 for outputting an output signal of the malfunction detection section 180, and terminals (e.g., t4, t5, t6, t7) for connecting to the passive element section. For example, the terminals for connecting to the passive element section can include a terminal t4 corresponding to the emitter of the first transistor 11 and a terminal t5 corresponding to the emitter of the second transistor 12. In the embodiment shown in Fig. 4, the two terminals t4 and t5 corresponding to the emitters can also correspond to the differential input of the malfunction detection unit 180. The terminals t4 and t5 corresponding to the emitters can each be connected to the passive element unit Ce. Furthermore, the terminals for connecting to the passive element unit can include a terminal t6 corresponding to the base of the first transistor 11 and a terminal t7 corresponding to the base of the second transistor 12. The terminals t6 and t7 corresponding to the bases can each be connected to the passive element unit Cb.

[0149] However, the present invention is not limited thereto. In another embodiment, the IC chip 500A-1 may further include at least a part of the passive element section of the amplifier section 130A-1. In another embodiment, the IC chip 500A-1 may include all of the active element section, the passive element section, and the malfunction detection section 180 of the amplifier section 130A-1.

[0150] According to the embodiment of the present invention, by incorporating the malfunction detection unit 180 into the IC chip 500A-1 on which the active element section of the amplifier section 130A-1 is integrated, it is possible to reduce the size and cost compared to a case in which the malfunction detection unit 180 is separately configured using general practical elements. Furthermore, by integrating at least a part of the amplifier section 130A-1 and the malfunction detection unit 180 into one IC chip 500A-1, the IC chip 500A-1 or the current compensation device 100A-1 can be put into practical use as an independent component with versatility.

[0151] The malfunction detection unit 180 will be described in detail later with reference to FIGS.

[0152] Fig. 5 shows another more specific example of the embodiment shown in Fig. 3, and is a diagram illustrating an active current compensation apparatus 100A-2 according to an embodiment of the present invention. The active current compensation apparatus 100A-1 shown in Fig. 5 is an example of the active current compensation apparatus 100A shown in Fig. 3. The amplifier unit 130A-2 included in the active current compensation apparatus 100A-2 is an example of the amplifier unit 130 of the active current compensation apparatus 100A.

[0153] 5 corresponds to the amplifier 130A-1 shown in FIG 4, and may differ only in the position where the malfunction detection unit 180 is connected. Specifically, in the IC chip 500A-2, a differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 can be input to the malfunction detection unit 180. Therefore, the explanation regarding the amplifier 130A-2 corresponds to the explanation regarding the amplifier 130A-1, and will be explained briefly.

[0154] In one embodiment, the passive element section of the amplifier unit 130A-2 may include Cb, Ce, Z1, Z2, and Cdc. The active element section of the amplifier unit 130A-2 may include a first transistor 11, a second transistor 12, a diode 13, Rnpn, Rpnp, and Re. In one embodiment, the first transistor 11 may be an npn BJT, and the second transistor 12 may be a pnp BJT. For example, the amplifier unit 130A-2 may have a push-pull amplifier structure including an npn BJT and a pnp BJT. The amplifier unit 130A-2 according to one embodiment may have a recurrent structure that injects an output current back into the bases of the first transistor 11 and the second transistor 12.

[0155] When the input voltage of the noise signal amplifier 130A-2 is a positive swing greater than 0, the first transistor 11 (e.g., an npn BJT) can operate. When the input voltage of the noise signal amplifier 130A-2 is a negative swing less than 0, the second transistor 12 (e.g., a pnp BJT) can operate.

[0156] By supplying power from the power supply device 400, the voltages at the base and emitter nodes of the first transistor 11 and the second transistor 12 can swing widely in common mode. Here, by checking whether the DC bias of the amplifier unit 130A-2 is normal, it can be checked whether the active current compensation device 100A-2 is operating normally.

[0157] As described above, since the voltages at the base nodes and emitter nodes of the first transistor 11 and the second transistor 12 swing widely in common mode, it is possible to sense a malfunction by detecting only the differential DC voltage between one node of the first transistor 11 and one node of the second transistor 12.

[0158] 5, the differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 can be input to the malfunction detection unit 180. If the differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 is within a predetermined range, the malfunction detection unit 180 can output a signal indicating a normal state via the output terminal t3. If the differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 is outside the predetermined range, the malfunction detection unit 180 can output a signal indicating a failure via the output terminal t3.

[0159] In the embodiment of the present invention, at least a part of the amplifier section 130A-2 and the malfunction detector section 180 can be physically integrated into one IC chip 500A-2.

[0160] In one embodiment, the active element section of the amplifier section 130A-2 and the malfunction detection section 180 can be integrated into one IC chip 500A-2 as shown in FIG. 5. For example, the first transistor 11, the second transistor 12, the diode 13, Rnpn, Rpnp, Re, and the malfunction detection section 180 of the active element section can be integrated into one IC chip 500A-2. In this case, the IC chip 500A-2 can include a terminal t1 for connecting to the power supply device 400, a terminal t2 for connecting to the second reference potential 602, a terminal t3 for outputting an output signal of the malfunction detection section 180, and terminals (e.g., t4, t5, t6, t7) for connecting to the passive element section. For example, the terminals for connecting to the passive element section can include a terminal t4 corresponding to the emitter of the first transistor 11 and a terminal t5 corresponding to the emitter of the second transistor 12. The terminals t4 and t5 corresponding to the emitters can be connected to Ce of the passive element section, respectively. Furthermore, the terminals for connection to the passive element unit may include a terminal t6 corresponding to the base of the first transistor 11 and a terminal t7 corresponding to the base of the second transistor 12. In the embodiment shown in Fig. 5, the two terminals t6 and t7 corresponding to the bases may also correspond to differential inputs of the malfunction detection unit 180. The terminals t6 and t7 corresponding to the bases may each be connected to Cb of the passive element unit.

[0161] However, the present invention is not limited thereto. In another embodiment, the IC chip 500A-2 may further include at least a part of the passive element section of the amplifier section 130A-2. In another embodiment, the IC chip 500A-2 may include all of the active element section, the passive element section, and the malfunction detection section 180 of the amplifier section 130A-2.

[0162] The malfunction detection unit 180 will be described in detail later with reference to FIGS.

[0163] The following description of the amplifier 130 can also be applied to the amplifiers 130A-1 and 130A-2.

[0164] FIG. 6 is a diagram showing the functional configuration of the malfunction detection section 180 according to an embodiment of the present invention.

[0165] 6, the malfunction detection unit 180 may include a subtractor 181, a first comparator 182a, a second comparator 182b, a first level shifter 183a, a second level shifter 183b, and a logic circuit 184. However, this is merely an embodiment, and the malfunction detection unit 180 of the present invention is not limited thereto.

[0166] The malfunction detection unit 180 can be applied to the IC chips 500, 500A-1, and 500A-2 according to the various embodiments described above.

[0167] In various embodiments, signals of two nodes included in the amplifier units 130, 130A-1, and 130A-2 may be differentially input to the subtractor 181 of the malfunction detection unit 180. As described above, a signal of one node of the first transistor 11 and a signal of one node of the second transistor 12 may be differentially input to the subtractor 181.

[0168] The subtractor 181 can selectively detect only the differential DC voltage between the node of the first transistor 11 and the node of the second transistor 12. Since the subtractor 181 detects the voltages at the two nodes differentially, the subtractor 181 can ignore the common mode swing of the two nodes. The subtractor 181 can output the detected differential DC voltage Vsub.

[0169] 4 in one embodiment, the subtractor 181 can output a differential DC voltage Vsub between the emitter of the first transistor 11 and the emitter of the second transistor 12. In this case, the input terminal of the subtractor 181 can share a node with the emitters of the first transistor 11 and the second transistor 12.

[0170] 5, the subtractor 181 can output a differential DC voltage Vsub between the base of the first transistor 11 and the base of the second transistor 12. In this case, the input terminal of the subtractor 181 can share a node with the bases of the first transistor 11 and the second transistor 12.

[0171] Meanwhile, the voltage at each input terminal of the subtractor 181 can swing, and the swing can correspond to the magnitude of the rated voltage Vdd of the amplifier unit 130. Therefore, the subtractor 181 may need to have a rated voltage corresponding to the rated voltage Vdd of the amplifier unit 130. Therefore, the subtractor 181 can be driven by being supplied with the supply voltage Vdd of the power supply device 400 as it is.

[0172] Since the malfunction detection unit 180 must not affect the operation of the amplification unit 130, the subtractor 181 of the malfunction detection unit 180 may have a high input impedance. For example, the subtractor 181 may be configured with a circuit having an input impedance greater than 10 kOhm.

[0173] According to one embodiment, the subtractor 181 may include a rail-to-rail Op-amp.

[0174] The first comparator 182a and the second comparator 182b may detect whether the magnitude of the differential DC voltage Vsub, which is the output of the subtractor 181, is within a predetermined range. If the magnitude of the differential DC voltage Vsub is within the predetermined range, the amplifier unit 130 may be determined to be normal, and if the magnitude of the differential DC voltage Vsub is outside the predetermined range, the amplifier unit 130 may be determined to be faulty. For example, if the differential DC voltage Vsub is between a maximum reference voltage Vref,max and a minimum reference voltage Vref,min, the amplifier unit 130 may be normal. If the differential DC voltage Vsub is higher than the maximum reference voltage Vref,max or lower than the minimum reference voltage Vref,min, the amplifier unit 130 may be faulty.

[0175] The maximum reference voltage Vref,max and the minimum reference voltage Vref,min may be preset according to various embodiments. Below, the criteria for setting the maximum reference voltage Vref,max and the minimum reference voltage Vref,min will be described.

[0176] In one embodiment as shown in FIG. 4, the subtractor 181 may detect a differential DC voltage Vsub between the emitter of the first transistor 11 and the emitter of the second transistor 12. When the amplifier unit 130 operates normally, the differential DC voltage Vsub may correspond to Ie×Re. Re is a resistor connecting the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12, and Ie represents a current flowing through Re. Ie and Re may be determined by design. In this embodiment, the maximum reference voltage Vref,max may be set higher than Ie×Re by a specified amount. The minimum reference voltage Vref,min may be set lower than Ie×Re by a specified amount.

[0177] In one embodiment as shown in FIG. 5, the subtractor 181 may detect a differential DC voltage Vsub between the base of the first transistor 11 and the base of the second transistor 12. When the amplifier unit 130 operates normally, the differential DC voltage Vsub may correspond to (Ie×Re+2Vbe,bjt). Re is a resistor connecting the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12, and Ie indicates a current flowing through Re. Ie and Re may be determined by design. Vbe,bjt represents a voltage between the base and emitter of the first transistor 11 or the second transistor 12. In this embodiment, the maximum reference voltage Vref,max may be set higher than (Ie×Re+2Vbe,bjt) by a specified amount. The minimum reference voltage Vref,min may be set lower than (Ie×Re+2Vbe,bjt) by a specified amount. For example, the maximum reference voltage Vref,max may be set to 2V, and the minimum reference voltage Vref,min may be set to 1.4V. However, this is not limited to this.

[0178] The first comparator 182a may output a first signal a1 indicating whether the differential DC voltage Vsub is lower than a maximum reference voltage Vref,max, and the second comparator 182b may output a second signal b1 indicating whether the differential DC voltage Vsub is higher than a minimum reference voltage Vref,min.

[0179] Meanwhile, since a high voltage may still be generated at the input terminals of the first comparator 182a and the second comparator 182b, the first comparator 182a and the second comparator 182b may have a rated voltage corresponding to the rated voltage Vdd of the amplifier unit 130. Therefore, the first comparator 182a and the second comparator 182b may be driven by being supplied with the supply voltage Vdd of the power supply device 400 as is.

[0180] According to one embodiment, the first comparator 182a and the second comparator 182b may include an open-loop 2-stage Op-amp. The first level shifter 183a and the second level shifter 183b can lower the voltage of the output signals of the comparators 182a and 182b.

[0181] Since the gate voltage of the MOSFET included in the logic circuit 184 is lower than the rated voltage Vdd of the comparators 182a and 182b, the voltage levels of the first signal a1 and the second signal b1 must be lowered before being input to the logic circuit 184. Therefore, using the level shifters 183a and 183b, it is possible to maintain the signs of the first signal a1 and the second signal b1 but only lower the magnitude of the voltages.

[0182] The first signal a1 output from the first comparator 182a can be input to the first level shifter 183a. The first level shifter 183a can output a third signal a2 in which the voltage level of the first signal a1 is lowered.

[0183] The second signal b1 output from the second comparator 182b can be input to the second level shifter 183b. The second level shifter 183b can output a fourth signal b2 in which the voltage level of the second signal b1 is lowered.

[0184] The rated voltage at the inputs of the level shifters 183a, 183b may correspond to a supply voltage Vdd of the power supply device 400. The rated voltage at the outputs of the level shifters 183a, 183b may be lower than the supply voltage Vdd.

[0185] For example, the supply voltage Vdd of the power supply device 400 may be 12V, and the rated voltage at the output terminals of the level shifters 183a and 183b may be 5V.

[0186] The third signal a2 and the fourth signal b2 can be input to the logic circuit 184. The logic circuit 184 can output a fifth signal c1 indicating whether the differential DC voltage Vsub is between the maximum reference voltage Vref,max and the minimum reference voltage Vref,min using the third signal a2 and the fourth signal b2. The fifth signal c1 can be a digital signal that is either 0 or 1. For example, when the fifth signal c1 indicates 0, the amplifier unit 130 can be in a normal state, and when the fifth signal c1 indicates 1, the amplifier unit 130 can be in a faulty state. Of course, the opposite case is also possible.

[0187] FIG. 7 is a schematic diagram of logic circuitry 184 according to one embodiment of the present invention.

[0188] 7, a third signal a2 which is an output of the first level shifter 183a and a fourth signal b2 which is an output of the second level shifter 183b may be input to a logic circuit 184. The logic circuit may output a fifth signal c1 based on the third signal a2 and the fourth signal b2 which are input. For example, the logic circuit 184 may have a truth table such as Table 1 below. [Table 1]

[0189] In one embodiment, the first comparator 182a may output a high signal indicating 1 when the differential DC voltage Vsub is lower than the maximum reference voltage Vref,max. In this case, since the first signal a1 indicates 1, the third signal a2 may also indicate 1.

[0190] In one embodiment, the second comparator 182b may output a low signal indicating 0 when the differential DC voltage Vsub is higher than the minimum reference voltage Vref,min. In this case, since the second signal b1 indicates 0, the fourth signal b2 may also indicate 0.

[0191] According to the embodiment described above, when the fifth signal c1 in Table 1 indicates 0, it can be determined that the amplifying unit 130 operates normally. When the fifth signal c1 indicates 1, it can be determined that the amplifying unit 130 malfunctions.

[0192] However, the logic circuit 184 and the truth table shown in Fig. 7 are merely examples, and the present invention is not limited thereto. In various embodiments, the malfunction detection unit 180 may be designed to output a fifth signal c1 indicating whether the amplification unit 130 is malfunctioning.

[0193] 7, the LED driver 14 may be connected to the output terminal t3 of the logic circuit 184. The LED driver 14 may drive the LED 15 outside the IC chip 500 based on the fifth signal c1.

[0194] For example, when the fifth signal c1 indicates 1, the LED driver 14 can turn on the external LED 15. The turned-on external LED 15 can indicate a malfunction situation. When the fifth signal c1 indicates 0, the LED driver 14 can turn off the external LED 15. The turned-off external LED 15 can indicate a normal situation.

[0195] The logic circuit 184 can be implemented with small size MOSFETs for efficiency. The fifth signal c1, which is the output of the logic circuit 184, can be, for example, 0 V or more and 5 V or less. The LED driver 14 connected to the output terminal t3 of the logic circuit 184 can be, for example, an NMOS LED driver.

[0196] Meanwhile, as described above, the output terminals of the level shifters 183a and 183b and the logic circuit 184 may have a lower rated voltage than the subtractor 181, the comparators 182a and 182b and the input terminals of the level shifters 183a and 183b.

[0197] Thus, the subtractor 181, the comparators 182a, 182b and the inputs of the level shifters 183a, 183b can be supplied with Vdd. The output stages of the level shifters 183a, 183b and the logic circuit 184 can be supplied with a supply voltage lower than Vdd. For example, the subtractor 181, the comparators 182a, 182b and the inputs of the level shifters 183a, 183b can be driven to 12V. The output stages of the level shifters 183a, 183b and the logic circuit 184 can be driven to 5V. Thus, with reference to FIG. 6, the subtractor 181, the comparators 182a, 182b and the inputs of the level shifters 183a, 183b are shown as being in a high supply voltage domain, and the output stages of the level shifters 183a, 183b and the logic circuit 184 are shown as being in a low supply voltage domain. The high supply voltage domain and the low supply voltage domain do not represent actual physical domains, but are terms used to distinguish between components powered by a high supply voltage and components powered by a low supply voltage.

[0198] FIG. 8 is a circuit diagram of the active element section 132 and the malfunction detection section 180 according to an embodiment of the present invention.

[0199] 8, the active element section 132 of the amplifier section 130 may include a first transistor 11, a second transistor 12, a diode 13, Rnpn, Rpnp, and Re.

[0200] The malfunction detection unit 180 may include a subtractor 181, a first comparator 182a, a second comparator 182b, a first level shifter 183a, a second level shifter 183b, and a logic circuit 184. The malfunction detection unit 180 may further include an LED driver 14 at an output terminal of the logic circuit 184.

[0201] Since the malfunction detection section 180 must not affect the operation of the amplifier section 130 including the active element section 132, the subtractor 181 of the malfunction detection section 180 can have a high input impedance.

[0202] The malfunction detection unit 180 does not need to operate all the time, but only needs to operate when a malfunction check is required. Therefore, in order to reduce unnecessary power consumption, a switch 16 is provided to selectively turn off only the malfunction detection unit 180.

[0203] The switch 16 may be present outside the IC chip 500. The IC chip 500 may further include a separate terminal t8 for selectively supplying power to the malfunction detection unit 180 based on the state of the switch 16. The switch 16 may be connected between the power supply device 400 and the terminal t8.

[0204] Meanwhile, the malfunction detection unit 180 may include components driven by a high supply voltage and components driven by a low supply voltage. For example, the subtractor 181, the comparators 182a and 182b, and the input terminals of the level shifters 183a and 183b may be driven by a high supply voltage Vdd. The output terminals of the level shifters 183a and 183b and the logic circuit 184 may be driven by a voltage lower than the supply voltage Vdd by the voltage divider circuit 17.

[0205] In one embodiment, the active element section 132 and the malfunction detection section 180 may be physically integrated into one IC chip 500. For example, the IC chip 500 may include a terminal t1 for connection to the power supply device 400, a terminal t2 for connection to the second reference potential 602, an output terminal t3 of the malfunction detection section 180, terminals (e.g., t4, t5, t6, t7) for connection to the passive element section, and a terminal t8 for turning on and off the operation of the malfunction detection section 180.

[0206] On the other hand, while FIG. 8 shows an embodiment in which the emitter nodes of the first transistor 11 and the second transistor 12 are connected to the input terminal of the subtractor 181, according to other embodiments, the base nodes of the first transistor 11 and the second transistor 12 may also be connected to the input terminal of the subtractor 181.

[0207] 9 is a diagram illustrating an outline of the configuration of an active current compensation apparatus 100B according to another embodiment of the present invention. In the following, description of contents that overlap with the contents described with reference to FIGS. 1 to 8 will be omitted.

[0208] 9, the active current compensation device 100B can actively compensate for first currents I11, I12, and I13 input in common mode to large current paths 111B, 112B, and 113B connected to a first device 300, respectively.

[0209] To this end, an active current compensation device 100B according to another embodiment of the present invention may include three high current paths 111B, 112B, 113B, a sensing transformer 120B, an amplifier section 130B, a malfunction detection section 180, a compensation transformer 140B and a compensation capacitor section 150B.

[0210] Compared with the active current compensation apparatuses 100A, 100A-1, and 100A-2 according to the above-described embodiments, the active current compensation apparatus 100B according to the embodiment shown in Fig. 9 includes three large current paths 111B, 112B, and 113B, and therefore has differences in the sensing transformer 120B and the compensation capacitor unit 150B. Therefore, the following description of the active current compensation apparatus 100B will focus on the above-mentioned differences.

[0211] The active current compensation device 100B may include a first large current path 111B, a second large current path 112B, and a third large current path 113B that are distinct from one another. According to an embodiment, the first large current path 111B may be an R-phase power line, the second large current path 112B may be an S-phase power line, and the third large current path 113B may be a T-phase power line. The first currents I11, I12, and I13 may be input in a common mode to each of the first large current path 111B, the second large current path 112B, and the third large current path 113B.

[0212] The primary side 121B of the sensing transformer 120B is disposed in each of the first large current path 111B, the second large current path 112B, and the third large current path 113B, and can generate an induced current in the secondary side 122B. The magnetic flux densities generated in the sensing transformer 120B by the first currents I11, I12, and I13 on the three large current paths 111B, 112B, and 113B can reinforce each other.

[0213] Meanwhile, in the active current compensation apparatus 100B, the amplifier 130B may be implemented as one of the amplifiers including the amplifier 130A-1 and the amplifier 130A-2. FIG 9 shows the amplifier 130B corresponding to the amplifier 130A-1 as an example.

[0214] At least a part of the amplifier 130B and the malfunction detector 180 can be physically integrated into one IC chip 500B. For example, as shown in FIG. 9, the active element section of the amplifier 130B and the malfunction detector 180 can be integrated into one IC chip 500B. The active element section can include, for example, a first transistor 11, a second transistor 12, a diode 13, Rnpn, Rpnp, and Re. However, the present invention is not limited thereto, and at least a part of the components of the passive element section including Cb, Ce, Z1, Z2, and Cdc can also be integrated into the IC chip 500B.

[0215] 9 shows an embodiment in which the voltage of the emitter node of the first transistor 11 and the voltage of the emitter node of the second transistor 12 are differentially input to the malfunction detection unit 180. However, the present invention is not limited to this, and according to another embodiment, the voltage of the base node of the first transistor 11 and the voltage of the base node of the second transistor 12 may be differentially input to the malfunction detection unit 180. The first transistor 11 may be an npn BJT, and the second transistor 12 may be a pnp BJT.

[0216] The IC chip 500B may include a terminal t1 for connection to the power supply device 400, a terminal t2 for connection to the second reference potential 602, a terminal t3 for outputting an output signal of the malfunction detection unit 180, and terminals (e.g., t4, t5, t6, t7) for connection to the passive element unit. However, the present invention is not limited thereto, and according to another embodiment, as shown in Fig. 8, the IC chip 500B may further include a terminal t8 connected to a switch 16 for selectively supplying power to the malfunction detection unit 180. In this case, the switch 16 may be connected between the power supply device 400 and the terminal t8.

[0217] Although not shown in Fig. 9, according to an embodiment as in Fig. 8, the LED driver 14 and the external LED 15 may be connected to the output terminal t3 of the malfunction detection unit 180. The external LED 15 may indicate a normal or malfunction state of the active current compensation apparatus 100B.

[0218] Meanwhile, the compensation capacitor unit 150B can provide paths through which the compensation currents IC1, IC2, and IC3 generated by the compensation transformer 140B flow to the first large current path 111B, the second large current path 112B, and the third large current path 113B, respectively.

[0219] The active current compensation apparatus 100B may further include a decoupling capacitor unit 170B on the output side (i.e., the second device 200 side). One end of each capacitor included in the decoupling capacitor unit 170B may be connected to the first large current path 111B, the second large current path 112B, and the third large current path 113B, respectively. The opposite end of each capacitor may be connected to a first reference potential 601 of the current compensation apparatus 100B.

[0220] The decoupling capacitor section 170B can prevent the output performance of the compensation current of the active current compensation device 100B from fluctuating significantly due to changes in the impedance value of the second device 200. The impedance ZY of the decoupling capacitor section 170B can be designed to have a value smaller than a value designated in the first frequency band targeted for noise reduction. By incorporating the decoupling capacitor section 170B, the current compensation device 100B can be used as an independent module in any system (e.g., a three-phase three-wire system).

[0221] According to one embodiment, the decoupling capacitor section 170B may be omitted in the active current compensation device 100B.

[0222] The active current compensation device 100B according to such an embodiment can be used to compensate (or cancel) the first currents I11, I12, I13 transferred to a power source at a load in a three-phase, three-wire power system.

[0223] It goes without saying that the active current compensation devices according to the various embodiments of the present invention can be modified so as to be applicable to a three-phase four-wire system according to the technical concept of the present invention.

[0224] The active current compensation devices 100, 100A, 100A-1, 100A-2, 100B according to various embodiments have only a small increase in size and heat generation in a high power system compared to a passive EMI filter. By integrating the active circuit section and the malfunction detection section into one IC chip 500, 500A-1, 500A-2, 500B, the IC chip 500, 500A-1, 500A-2, 500B can be put into practical use with versatility as an independent component. In addition, the current compensation devices 100, 100A, 100A-1, 100A-2, 100B including the IC chip 500, 500A-1, 500A-2, 500B can be manufactured into an independent module and put into practical use. Such current compensation devices 100, 100A, 100A-1, 100A-2, 100B can detect malfunctions as an independent module regardless of the characteristics of the surrounding electrical system.

[0225] [2] An active current compensation device including a built-in power conversion unit 10 is a diagram illustrating a schematic configuration of a system including an active current compensation apparatus 100 according to an embodiment of the present invention. The active current compensation apparatus 100 can actively compensate for first currents I11, I12 (e.g., EMI noise currents) input to a common mode (CM) from a first device 300 via a plurality of large current paths 111, 112.

[0226] Referring to FIG. 10, the active current compensation device 100 may include a sensing unit 120, an amplifier unit 130, a power management unit 180, and a compensation unit 160.

[0227] In this specification, the first device 300 may be various types of power systems that use the power source supplied by the second device 200. For example, the first device 300 may be a load that is driven by the power source supplied by the second device 200. In addition, the first device 300 may be a load (e.g., an electric vehicle) that stores energy using the power source supplied by the second device 200 and is driven by using the stored energy. However, the first device 300 is not limited thereto.

[0228] The second device 200 in this specification can be a system of various forms for supplying power in the form of current and / or voltage to the first device 300. The second device 200 can also be, but is not limited to, a device that supplies stored energy.

[0229] A power converter may be located on the first device 300 side. For example, the first currents I11 and I12 may be input to the current compensation device 100 by a switching operation of the power converter. That is, the first device 300 side may correspond to a noise source, and the second device 200 side may correspond to a noise receiver.

[0230] The two or more high current paths 111, 112 may be paths that transmit the power source supplied by the second device 200, i.e., the second currents I21, I22, to the first device 300, and may be, for example, power lines. For example, each of the two or more high current paths 111, 112 may be a live line and a neutral line. At least a part of the high current paths 111, 112 may pass through the current compensation device 100. The second currents I21, I22 may be AC ​​currents having a frequency in a second frequency band. The second frequency band may be, for example, a 50 Hz to 60 Hz band.

[0231] In addition, the two or more high current paths 111, 112 may be paths through which noise generated in the first device 300, i.e., the first currents I11, I12, are transmitted to the second device 200. The first currents I11, I12 may be input in a common mode to each of the two or more high current paths 111, 112. The first currents I11, I12 may be currents unintentionally generated in the first device 300 due to various causes. For example, the first currents I11, I12 may be noise currents generated by a virtual capacitance between the first device 300 and the surrounding environment. Alternatively, the first currents I11, I12 may be noise currents generated by a switching operation of a power conversion device of the first device 300. The first currents I11, I12 may be currents having a frequency in a first frequency band. The first frequency band may be a frequency band higher than the above-mentioned second frequency band. The first frequency band may be, for example, a 150 KHz to 30 MHz band.

[0232] Meanwhile, the two or more high current paths 111, 112 may include two paths as shown in Fig. 10, or may include three paths as shown in Fig. 16. Furthermore, the two or more high current paths 111, 112 may include four paths. The number of the high current paths 111, 112 may vary depending on the type and / or form of the power source used by the first device 300 and / or the second device 200.

[0233] The sensing unit 120 may detect the first currents I11 and I12 on the two or more high current paths 111 and 112 and generate output signals corresponding to the first currents I11 and I12. That is, the sensing unit 120 may mean a means for detecting the first currents I11 and I12 on the high current paths 111 and 112. At least a part of the high current paths 111 and 112 may pass through the sensing unit 120 to sense the first currents I11 and I12, but a part of the sensing unit 120 where an output signal is generated by sensing may be insulated from the high current paths 111 and 112. For example, the sensing unit 120 may be embodied as a sensing transformer. The sensing transformer may detect the first currents I11 and I12 on the high current paths 111 and 112 while being insulated from the high current paths 111 and 112. However, the sensing unit 120 is not limited to a sensing transformer.

[0234] According to an embodiment, the sensing unit 120 may be differentially connected to an input terminal of the amplification unit 130 .

[0235] The amplifier 130 is electrically connected to the sensing unit 120 and may amplify an output signal output from the sensing unit 120 to generate an amplified output signal. In the present invention, "amplification" by the amplifier 130 may mean adjusting the magnitude and / or phase of an object to be amplified. The amplifier 130 may be embodied by various means and may include active elements. In one embodiment, the amplifier 130 may include a BJT (Bipolar Junction Transistor). For example, the amplifier 130 may include a plurality of passive elements such as resistors and capacitors in addition to the BJT. However, the present invention is not limited thereto, and any means for "amplification" described in the present invention may be used without limitation as the amplifier 130 of the present invention.

[0236] According to an embodiment, the second reference potential 602 of the amplifier 130 and the first reference potential 601 of the current compensation device 100 can be distinguished from each other. For example, when the amplifier 130 is insulated from the large current paths 111 and 112, the second reference potential 602 of the amplifier 130 and the first reference potential 601 of the current compensation device 100 can be distinguished from each other.

[0237] However, the present invention is not limited to this. For example, when the amplifier 130 is not insulated from the large current paths 111 and 112, the reference potential of the amplifier and the reference potential of the current compensation device may not be distinguished.

[0238] The amplifier 130 may be supplied with power from a power supply device 400 that is distinct from the first device 300 and / or the second device 200. The amplifier 130 may receive power from the power supply device 400 and amplify an output signal output from the sensing unit 120 to generate an amplified current.

[0239] The power supply device 400 may be, for example, a device that receives power from one of the first device 300 and the second device 200 and generates input power for the amplifier unit 130. The power supply device 400 may be, for example, a switching mode power supply (SMPS) for the first device 300 or the second device 200. The power supply device 400 may output a direct current (DC) voltage VI based on a second reference potential 602. The output voltage VI of the power supply device 400 may be used to drive the amplifier unit 130.

[0240] Meanwhile, although an optimized DC voltage level required for the amplifier unit 130 exists, the power supply device 400 may not be able to output the optimized voltage level required for the amplifier unit 130. Specifically, the output DC voltage VI of the power supply device 400 may vary depending on the system (e.g., the first device 300 or the second device 200). For example, the optimal supply voltage for the amplifier unit 130 is 12V, but the output voltage VI of the power supply device 400 may vary, such as 15V, 24V, or 48V, depending on the system. Therefore, if the output voltage VI of the power supply device 400 is directly supplied to the amplifier unit 130, the operation of the amplifier unit 130 may become unstable or may cause a failure.

[0241] Therefore, the active current compensation apparatus 100 according to the embodiment of the present invention may include a power management unit 180 between the amplifier unit 130 and the power supply device 400. The power management unit 180 may receive a voltage VI output from the power supply device 400 and convert it into an output voltage VO. The output voltage VO of the power management unit 180 may be input to the amplifier unit 130. VI may vary, such as 15V, 24V, or 48V, depending on the system, but VO is a fixed value that is an optimized voltage level required for the amplifier unit 130.

[0242] The power management unit 180 may be a DC-DC converter or a power management IC (PMIC).

[0243] According to an embodiment of the present invention, at least a portion of the amplifier unit 130 and at least a portion of the power management unit 180 may be integrated into a single IC chip. For example, by incorporating at least a portion of the amplifier unit 130 and at least a portion of the power management unit 180 into a single IC chip, the IC chip can be put into practical use as an independent component with versatility.

[0244] The compensation unit 160 may generate compensation currents IC1 and IC2 based on the output signal amplified by the amplifier 130. The output side of the compensation unit 160 may be connected to the large current paths 111 and 112 to flow the compensation currents IC1 and IC2 through the large current paths 111 and 112.

[0245] According to an embodiment, an output side of the compensation unit 160 may be insulated from the amplifier unit 130. For example, the compensation unit 160 may include a compensation transformer for the isolation. For example, an output signal of the amplifier unit 130 may flow through a primary side of the compensation transformer, and a compensation current based on the output signal may be generated on a secondary side of the compensation transformer.

[0246] However, the present invention is not limited to this. According to another embodiment, the output side of the compensation unit 160 may be non-insulated from the amplifier unit 130. In this case, the amplifier unit 130 may be non-insulated from the large current paths 111 and 112.

[0247] In order to cancel out the first currents I11 and I12, the compensating unit 160 may inject compensation currents IC1 and IC2 into the large current paths 111 and 112 through the two or more large current paths 111 and 112, respectively. The compensation currents IC1 and IC2 may have the same magnitude and opposite phase as the first currents I11 and I12.

[0248] FIG. 11 is a diagram showing an example of the functional configuration of the amplifier unit 130 and the power management unit 180 according to an embodiment of the present invention.

[0249] 11, the amplifier unit 130 may include an active circuit unit 131 and a passive circuit unit 132. The passive circuit unit 132 is composed of only passive elements, and the active circuit unit 131 includes active elements. The active circuit unit 131 may further include passive elements in addition to active elements. An example of a detailed configuration of the amplifier unit 130 including the active circuit unit 131 and the passive circuit unit 132 will be described later with reference to FIG. 13.

[0250] The power management unit 180 may include a power conversion unit 181, a feedback unit 182, and a filter unit 183. The power conversion unit 181 can convert an arbitrary input voltage VI into an output voltage VO. The feedback unit 182 is a feedback control system that enables an arbitrary input voltage VI to output the same output voltage VO. The filter unit 183 is a DC voltage / current filter. The filter unit 183 may be located at the input end or the output end of the power management unit 180. An example of a detailed configuration of the power management unit 180 will be described later with reference to FIGS. 14 and 15.

[0251] According to one embodiment, the active circuit unit 131 of the amplifier unit 130 and the power conversion unit 181 of the power management unit 180 may be physically integrated into a single IC chip 500. However, this is merely one embodiment, and in other embodiments, at least some elements of the active circuit unit 131, the power management unit 180, and the feedback unit 182 may be physically integrated into a single IC chip 500. It goes without saying that in still other embodiments, the entire amplifier unit 130 and the power management unit 180 may be physically integrated into a single IC chip 500.

[0252] The power management unit 180 may include an active element. Here, the reference potential of the power management unit 180 may be the same as a second reference potential 602 which is a reference potential of the amplifier unit 130. The reference potential of the power management unit 180 may be different from a first reference potential 601 which is a reference potential of the current compensation device 100 (e.g., a reference potential of the compensation unit 160).

[0253] The amplifier 130 may receive power from the power supply device 400 via the power management unit 180. The amplifier 130 receives an output voltage VO from the power management unit 180 and amplifies an output signal output by the sensing unit 120 to generate an amplified current. The amplified current may be input to the compensation unit 160.

[0254] Fig. 12 shows a more specific example of the embodiment shown in Fig. 10, and is a diagram illustrating an active current compensation apparatus 100A according to one embodiment of the present invention. The active current compensation apparatus 100A can actively compensate for first currents I11 and I12 (e.g., noise currents) input in common mode to two large current paths 111 and 112 connected to the first device 300, respectively.

[0255] Referring to FIG. 11, an active current compensation apparatus 100A may include a sensing transformer 120A, an amplifier unit 130, and a compensation unit 160A.

[0256] In an embodiment, the sensing unit 120 may include a sensing transformer 120A. In this case, the sensing transformer 120A may be a means for detecting the first currents I11 and I12 on the large current paths 111 and 112 while being insulated from the large current paths 111 and 112. The sensing transformer 120A may sense the first currents I11 and I12, which are noise currents input from the first device 300 side to the large current paths 111 and 112 (e.g., power lines).

[0257] The sensing transformer 120A may include a primary side 121A disposed on the large current paths 111 and 112 and a secondary side 122A differentially connected to an input terminal of the amplifier unit 130. The sensing transformer 120A may generate an induced current in a secondary side 122A (e.g., a secondary winding) based on a magnetic flux density induced by a first current I11 and I12 in the primary side 121A (e.g., a primary winding) disposed on the large current paths 111 and 112. The primary side 121A of the sensing transformer 120A may be, for example, a winding in which the first large current path 111 and the second large current path 112 are wound around one core. However, the primary side 121A of the sensing transformer 120A may be a type in which the first large current path 111 and the second large current path 112 pass through the core.

[0258] Specifically, the magnetic flux density induced by the first current I11 on the first large current path 111 (e.g., live line) and the magnetic flux density induced by the first current I12 on the second large current path 112 (e.g., neutral line) can be configured to overlap (or reinforce) each other. At this time, the second currents I21 and I22 also flow through the large current paths 111 and 112, but the magnetic flux density induced by the second current I21 on the first large current path 111 and the magnetic flux density induced by the first current I22 on the second large current path 112 can be configured to cancel each other out. Also, as an example, the sensing transformer 120A can be configured so that the magnitude of the magnetic flux density induced by the first currents I11, I12 in a first frequency band (e.g., a band having a range of 150 KHz to 30 MHz) is greater than the magnitude of the magnetic flux density induced by the second currents I21, I22 in a second frequency band (e.g., a band having a range of 50 Hz to 60 Hz).

[0259] In this manner, the sensing transformer 120A is configured to cancel out the magnetic flux densities induced by the second currents I21 and I22, so that only the first currents I11 and I12 are detected. That is, the current induced in the secondary side 122A of the sensing transformer 120A may be a current obtained by converting the first currents I11 and I12 at a constant rate.

[0260] For example, in the sensing transformer 120A, if the winding ratio of the primary side 121A to the secondary side 122A is 1:Nsen and the self-inductance of the primary side 121A of the sensing transformer 120A is Lsen, the secondary side 122A may have a self-inductance of Nsen2.Lsen. In this case, the current induced in the secondary side 122A is 1 / Nsen times the first current I11, I12. In one example, the primary side 121A and the secondary side 122A of the sensing transformer 120A may be coupled with a coupling coefficient of ksen.

[0261] The secondary side 122A of the sensing transformer 120A may be connected to an input terminal of the amplifier unit 130. For example, the secondary side 122A of the sensing transformer 120A may be differentially connected to the input terminal of the amplifier unit 130 to provide an induced current or an induced voltage to the amplifier unit 130.

[0262] The amplifier 130 may amplify the current sensed by the sensing transformer 120A and induced in the secondary side 122A. For example, the amplifier 130 may amplify the magnitude of the induced current at a certain rate and / or adjust the phase.

[0263] According to various embodiments of the present invention, the amplifier section 130 may include an active circuit section 131 and a passive circuit section 132 that is a component other than the active circuit section.

[0264] The active circuit unit 131 may include an active element. The active circuit unit 131 may be connected to the power supply device 400 to drive the active element. The active circuit unit 131 may be supplied with power from the power supply device 400 via the power management unit 180. The power management unit 180 may receive an arbitrary DC voltage VI from the power supply device 400 and output a uniform output voltage VO to the active circuit unit 131. The power supply device 400, the power management unit 180, and the amplifier unit 130 may all be connected to a second reference potential 602. Thus, both the input voltage VI and the output voltage VO of the power management unit 180 are voltages based on the second reference potential 602. The second reference potential 602 may be distinguished from the first reference potential 601 of the current compensation device 100A (or the compensation unit 160A).

[0265] The power management unit 180 may include a filter unit 183, a feedback unit 182, and a power conversion unit 181 which is another component. According to an embodiment, the active circuit unit 131 of the amplifier unit 130 and the power conversion unit 181 of the power management unit 180 may be physically built into one IC chip 500. The IC chip 500 can convert any input voltage VI level into a voltage VO level optimized for the active circuit unit 131 to operate the active circuit unit 131. Such an IC chip 500 can be put into practical use as an independent component with versatility.

[0266] The compensating unit 160A may be an example of the above-mentioned compensating unit 160. In one embodiment, the compensating unit 160A may include a compensating transformer 140A and a compensating capacitor unit 150A. The amplified current amplified by the above-mentioned amplifying unit 130 may flow to the primary side 141A of the compensating transformer 140A.

[0267] The compensation transformer 140A according to one embodiment may be a means for isolating the amplifier unit 130 including the active elements from the high current paths 111, 112. That is, the compensation transformer 140A may be a means for generating (on the secondary side 142A) a compensation current to be injected into the high current paths 111, 112 based on the amplified current while being insulated from the high current paths 111, 112.

[0268] The compensation transformer 140A may include a primary side 141A differentially connected to the output terminal of the amplifier 130 and a secondary side 142A connected to the large current paths 111 and 112. The compensation transformer 140A may induce a compensation current in the secondary side 142A (e.g., a secondary winding) based on a magnetic flux density induced by an amplified current flowing in the primary side 141A (e.g., a primary winding).

[0269] At this time, the secondary side 142A may be disposed on a path connecting the compensation capacitor unit 150A described below and a first reference potential 601 of the current compensation apparatus 100A. That is, one end of the secondary side 142A may be connected to the large current paths 111 and 112 via the compensation capacitor unit 150A, and the other end of the secondary side 142A may be connected to the first reference potential 601 of the active current compensation apparatus 100A. Meanwhile, the primary side 141A of the compensation transformer 140A, the amplifier unit 130, and the secondary side 122A of the sensing transformer 120A may be connected to a second reference potential 602 that is distinguished from the remaining components of the active current compensation apparatus 100A. The first reference potential 601 of the current compensation apparatus 100A according to an embodiment may be distinguished from the second reference potential 602 of the amplifier unit 130.

[0270] In this way, the current compensation device 100A according to one embodiment can operate the components generating the compensation current in an isolated state by using a reference potential (i.e., the second reference potential 602) different from that of the remaining components for the components generating the compensation current, thereby improving the reliability of the active current compensation device 100A. However, the current compensation device according to the present invention is not limited to such an isolated structure.

[0271] In the compensation transformer 140A according to an embodiment, if the winding ratio of the primary side 141A to the secondary side 142A is 1:Ninj and the self-inductance of the primary side 141A of the compensation transformer 140A is Linj, the secondary side 142A may have a self-inductance of Ninj2.Linj. At this time, the current induced in the secondary side 142A is 1 / Ninj times the current (i.e., the amplified current) flowing in the primary side 141A. In one example, the primary side 141A and the secondary side 142A of the compensation transformer 140A may be coupled with a coupling coefficient of kinj.

[0272] The current converted through the compensation transformer 140A may be injected as compensation currents IC1, IC2 into the large current paths 111, 112 (e.g., power lines) through the compensation capacitor unit 150A. Therefore, the compensation currents IC1, IC2 may have the same magnitude and opposite phase as the first currents I11, I12 to cancel the first currents I11, I12. Therefore, the magnitude of the current gain of the amplifier unit 130 may be designed to be Nsen.Ninj. However, since magnetic coupling loss may occur in an actual situation, the target current gain of the amplifier unit 130 may be designed to be higher than Nsen.Ninj.

[0273] The compensation capacitor unit 150A can provide a path through which the current generated by the compensation transformer 140A flows to each of the two large current paths 111 and 112, as described above.

[0274] The compensation capacitor unit 150A may include a Y-capacitor (Y-cap) having one end connected to the secondary side 142A of the compensation transformer 140A and the other end connected to each of the large current paths 111 and 112. For example, one end of two Y-caps may share a node connected to the secondary side 142A of the compensation transformer 140A, and the opposite ends of each of the two Y-caps may have nodes connected to the first large current path 111 and the second large current path 112, respectively.

[0275] The compensation capacitor unit 150A can cause the compensation currents IC1 and IC2 induced by the compensation transformer 140A to flow through the power line. The compensation currents IC1 and IC2 compensate (or cancel) the first currents I11 and I12, so that the current compensation device 100A can reduce noise.

[0276] On the other hand, the compensation capacitor section 150A can be configured so that the current IL1 flowing between the two large current paths 111, 112 via the compensation capacitor is less than a first threshold value. Also, the compensation capacitor section 150A can be configured so that the current IL2 flowing between each of the two large current paths 111, 112 and the first reference potential 601 via the compensation capacitor is less than a second threshold value.

[0277] The active current compensation device 100A according to one embodiment can achieve an isolated structure by using a compensation transformer 140A and a sensing transformer 120A.

[0278] Fig. 13 shows a more specific example of the embodiment shown in Fig. 12, and is a diagram illustrating an active current compensation apparatus 100A-1 according to one embodiment of the present invention. The active current compensation apparatus 100A-1, an amplifier section 130A, and an active circuit section 131A shown in Fig. 13 are examples of the active current compensation apparatus 100A, the amplifier section 130, and the active circuit section 131 shown in Fig. 12.

[0279] The active current compensation apparatus 100A-1 according to an embodiment may include a sensing transformer 120A, an amplifier unit 130A, a compensation transformer 140A, and a compensation capacitor unit 150A. In an embodiment, the active current compensation apparatus 100A-1 may further include a decoupling capacitor unit 170A on the output side (i.e., the second device 200 side). In other embodiments, the decoupling capacitor unit 170A may be omitted. Descriptions of the sensing transformer 120A, the compensation transformer 140A, and the compensation capacitor unit 150A will be omitted to avoid duplication.

[0280] In one embodiment, an induced current induced in the secondary side 122A by the sensing transformer 120A may be differentially input to the amplifier unit 130A.

[0281] The amplifier unit 130A of the active current compensation device 100A-1 according to an embodiment may include an active circuit unit 131A and a passive circuit unit. The remaining components of the amplifier unit 130A except for the active circuit unit 131A may be included in the passive circuit unit. In an embodiment of the present invention, the active circuit unit 131A is physically implemented in one chip together with the power conversion unit 181 of the power management unit 180. The components included in the passive circuit unit may be discrete practical elements. The passive circuit unit may be implemented differently depending on the embodiment. The passive circuit unit may be modified so that the active circuit unit 131A can be applied to active current compensation devices 100 of various designs.

[0282] Active circuit portion 131A may include an npn BJT 11, a pnp BJT 12, a diode 13, and one or more resistors.

[0283] In one embodiment, the one or more resistors included in the active circuit portion 131A may include Rnpn, Rpnp, and / or Re. In the active circuit portion 131A, the resistor Rnpn may connect a collector node and a base node of the npn BJT 11. In the active circuit portion 131A, the resistor Rpnp may connect a collector node and a base node of the pnp BJT 12. In the active circuit portion 131A, the resistor Re may connect an emitter node of the npn BJT 11 and an emitter node of the pnp BJT 12.

[0284] Active circuit unit 131A may be driven by power supplied from power supply device 400 via power management unit 180. To this end, an output terminal of power management unit 180 may supply a DC voltage VO between the collector node of npn BJT 11 and the collector node of pnp BJT 12. The collector node of pnp BJT 12 may correspond to a second reference potential 602, and the collector node of npn BJT 11 may correspond to an output voltage VO of power management unit 180 with respect to second reference potential 602.

[0285] In one embodiment, a biasing diode 13 may connect the base node of the npn BJT 11 and the base node of the pnp BJT 12 in the active circuit portion 131A. That is, one end of the diode 13 may be connected to the base node of the npn BJT 11, and the other end of the diode 13 may be connected to the base node of the pnp BJT 12.

[0286] According to an embodiment of the present invention, the resistors Rnpn, Rpnp, Re and / or the bias diode 13 included in the active circuit unit 131A can be used for DC bias of the BJTs 11 and 12. In one embodiment of the present invention, the resistors Rnpn, Rpnp, Re and the bias diode 13 can be integrated into the IC chip 500 since they are general-purpose components in various active current compensation devices 100 and 100A.

[0287] Although omitted in Fig. 13, in various embodiments of the present invention, the active circuit unit 131A and the power conversion unit 181 may be integrated into a single IC chip 500. The IC chip 500 may include a terminal corresponding to the base of the npn BJT 11, a terminal corresponding to the collector of the npn BJT 11, a terminal corresponding to the emitter of the npn BJT 11, a terminal corresponding to the base of the pnp BJT 12, a terminal corresponding to the collector of the pnp BJT 12, and a terminal corresponding to the emitter of the pnp BJT 12. In addition, the IC chip 500 may further include a terminal of the power conversion unit 181, which will be described later in Fig. 14.

[0288] At least one of the terminals of the IC chip 500 described above can be connected to the passive circuit section 132. The active circuit section 131A and the passive circuit section are coupled to each other and can function as an amplifier section 130A.

[0289] In one embodiment, the passive circuitry may include capacitors Cb, Ce, and Cdc, and impedances Z1 and Z2.

[0290] According to one embodiment, the base terminal of the active circuit unit 131A can be connected to a capacitor Cb of the passive circuit unit. The emitter terminal of the active circuit unit 131A can be connected to a capacitor Ce of the passive circuit unit. Outside the IC chip 500, the collector terminal of the pnp BJT 12 can be connected to a second reference potential 602. Outside the IC chip 500, the capacitor Cdc of the passive circuit unit can be connected between both collector terminals.

[0291] Capacitors Cb and Ce included in the passive circuit section can block DC voltages at the base and emitter nodes of the BJTs 11 and 12. Capacitors Cb and Ce can selectively couple only alternating current (AC) signals.

[0292] Capacitor Cdc is a DC decoupling capacitor for voltage V0 and can be connected in parallel to the output voltage V0 of power management unit 180. Capacitor Cdc can selectively couple only AC signals between the collectors of both npn BJT11 and pnp BJT12.

[0293] The current gain of the amplifier unit 130A can be controlled by the ratio of impedances Z1 and Z2. Z1 and Z2 can be flexibly designed according to a required target current gain depending on the winding ratio of the sensing transformer 120A and the compensation transformer 140A. Therefore, Z1 and Z2 can be embodied outside the IC chip 500 (i.e., in a passive circuit unit).

[0294] The combination of the active circuit section 131A and the passive circuit sections Cb, Ce, Cdc, Z1, and Z2 can function as an amplifier section 130A. For example, the amplifier section 130A can have a push-pull amplifier structure including an npn BJT and a pnp BJT.

[0295] In one embodiment, the secondary side 122A of the sensing transformer 120A can be connected between the base side and the emitter side of the BJTs 11 and 12. In one embodiment, the primary side 141A of the compensation transformer 140A can be connected between the collector side and the base side of the BJTs 11 and 12. Here, the connection includes the case where the connection is indirectly connected.

[0296] In one embodiment, the amplifier unit 130A may have a recurrent structure that injects the output current back into the bases of the BJTs 11 and 12. Because of the recurrent structure, the amplifier unit 130A may stably obtain a constant current gain for the operation of the active current compensation device 100A-1.

[0297] For example, when the input voltage of the noise signal amplifier 130A is a positive swing greater than 0, the npn BJT 11 can operate. At this time, the operating current can flow through a first path passing through the npn BJT 11. When the input voltage of the noise signal amplifier 130A is a negative swing less than 0, the pnp BJT 12 can operate. At this time, the operating current can flow through a second path passing through the pnp BJT 12.

[0298] In the active circuit section 131A, the resistors Rnpn, Rpnp, and Re can adjust the operating point of the BJT. The resistors Rnpn, Rpnp, and Re can be designed according to the operating point of the BJT.

[0299] The inductors, capacitors (eg, Cb, Ce, Cdc), Z1 and Z2 of the passive circuitry are discrete components and may be implemented on the periphery of the IC chip 500.

[0300] The capacitance required for the capacitors Cb, Ce, and Cdc to couple an AC signal may be several μF or more (e.g., 10 μF). Since this capacitance value is difficult to implement within the IC chip 500, the capacitors Cb, Ce, and Cdc may be implemented outside the IC chip 500.

[0301] The impedances Z1 and Z2 can be implemented outside the IC chip 500 to achieve design flexibility for various power systems or various first devices 300. Z1 and Z2 can be flexibly designed according to the required target current gain according to the winding ratios of the sensing transformer 120A and the compensation transformer 140A.

[0302] Meanwhile, the active current compensation apparatus 100A-1 may further include a decoupling capacitor unit 170A on the output side (i.e., the second device 200 side). One end of each capacitor included in the decoupling capacitor unit 170A may be connected to the first large current path 111 and the second large current path 112, respectively. The opposite end of each capacitor may be connected to a first reference potential 601 of the current compensation apparatus 100A-1.

[0303] The decoupling capacitor section 170A can prevent the output performance of the compensation current of the active current compensation device 100A-1 from fluctuating significantly due to changes in the impedance value of the second device 200. The impedance ZY of the decoupling capacitor section 170A can be designed to have a value smaller than a value designated in the first frequency band targeted for noise reduction. By coupling the decoupling capacitor section 170A, the current compensation device 100A-1 can be used as an independent module in any system.

[0304] According to one embodiment, the decoupling capacitor section 170A may be omitted in the active current compensation device 100A-1.

[0305] Fig. 14 is a diagram illustrating a schematic configuration of a power management unit 180 according to an embodiment of the present invention. The power management unit 180 may include a power conversion unit 181, a feedback unit 182, and a filter unit 183. Fig. 14 illustrates each component of the power management unit 180 in more detail.

[0306] The power management unit 180 may be a power management IC (PMIC). In one embodiment, the power management unit 180 may be a voltage step-down converter, such as a buck converter.

[0307] The output DC voltage VI of the power supply device 400 is input via an input terminal VIN of the power conversion unit 181. VI can be various, such as 15V, 24V, or 48V, depending on the system.

[0308] The power conversion unit 181 can convert an arbitrary input voltage VI to a set output voltage VO. The value of VO can be set to an optimized voltage level (e.g., 12V) required for the active circuit unit 131.

[0309] The power conversion unit 181 may include a control circuit 20, a regulator 30, and a switch unit 40. The configuration of the power conversion unit 181, together with the active circuit unit 131, is incorporated into a single IC chip 500.

[0310] The regulator 30 can generate a DC low voltage for driving an internal circuit (e.g., the control circuit 20) from an input voltage VI. For example, the input voltage VI can have a high voltage range of 12V or more, but the internal circuit of the power conversion unit 181 can be efficient only when driven at a low voltage of 5V level. Therefore, the regulator 30 is a circuit that supplies a DC low voltage (e.g., 5V) for the internal IC of the power conversion unit 181. The regulator 30 can be called a linear regulator, a pre-regulator, an on-chip supply, an LDO (low dropout) regulator, etc.

[0311] The control circuit 20 is driven by being supplied with a DC low voltage generated by the regulator 30. The control circuit 20 includes a circuit required to output a constant output voltage in an arbitrary input voltage range. The control circuit 20 can generate a pulse width modulation (PWM) signal, which is a switching signal required to output a constant voltage in an arbitrary input voltage range. A detailed configuration of the control circuit 20 will be described later with reference to FIG. 15.

[0312] The switch unit 40 performs a switching operation in response to a switching signal (i.e., a PWM signal) input from the control circuit 20, and can generate a constant output voltage VO. The switch unit 40 can include a level shifter 45, a first driver 43, a second driver 44, a first switch 41, and a second switch 42. The first switch 41 and the second switch 42 can be MOSFETs. The first switch 41 can be a high side MOSFET, and the second switch 42 can be a low side MOSFET. Since the input capacitance of the gate terminal of the MOSFET is large, the first driver 43 and the second driver 44 having sufficient output can be disposed at the front end of the MOSFET.

[0313] In various embodiments of the present invention, the control circuit 20, regulator 30 and switch section 40 are integrated into a single IC chip 500 along with the active circuit section 131.

[0314] The feedback unit 182 is connected to the control circuit 20 and is disposed outside the IC chip 500. The feedback unit 182 is a feedback control system that enables the same output voltage VO to be output for any input voltage VI. The feedback unit 182 may be configured with discrete practical elements. Therefore, a compensation circuit required according to circumstances may be adjusted outside the IC chip 500. However, the present invention is not limited thereto, and some elements (e.g., resistors) of the feedback unit 182 may be built into the IC chip 500 according to an embodiment.

[0315] The filter unit 183 is a DC voltage / current filter and may be located at the output end of the power conversion unit 181. However, the present invention is not limited thereto, and when the power management unit 180 is a boost converter, the filter unit may be located at the input end of the power conversion unit 181. Meanwhile, the filter unit 183 may be configured as a discrete practical element outside the IC chip 500.

[0316] The power management unit 180 can finally output VO via a power conversion unit 181, a feedback unit 182, and a filter unit 183. The final output voltage VO of the power management unit 180 is input to an active circuit unit 131 of the amplifier unit 130. VO can be set to an optimum voltage level for driving the active circuit unit 131.

[0317] FIG. 15 is a diagram showing a more specific example of the power conversion unit 181 shown in FIG.

[0318] 14 and 15, the control circuit 20 of the power conversion unit 181 can include a voltage re-dividing circuit 21, a protection circuit 22, a pulse width modulation circuit 23, a zero current detector 24, and a soft start circuit 25. The regulator 30 in FIG. 15 corresponds to the regulator 30 in FIG. 14.

[0319] The regulator 30 can generate a DC low voltage from the input voltage VI for driving the internal circuit of the power conversion unit 181. The DC low voltage generated by the regulator 30 can be, for example, at a 5V level.

[0320] The voltage sub-dividing circuit 21 can receive the DC low voltage generated by the regulator 30. The voltage sub-dividing circuit 21 re-divides the DC low voltage received from the regulator 30 into a DC bias voltage suitable for an IC internal circuit block. For example, the voltage sub-dividing circuit 21 can re-divide the DC bias voltage to a BGR (band gap reference) block, a Ramp generator block, etc. The voltage sub-dividing circuit 21 can be called a master bias, etc.

[0321] The protection circuit 22 may include one or more protection circuits for various situations. In one embodiment, the protection circuit 22 may include an under-voltage protection circuit (Under Voltage Lock Out, UVLO). The under-voltage protection circuit may forcibly turn off the operation of the power conversion unit 181 to interrupt unstable operation when the output voltage of the regulator 30 drops below a specified voltage.

[0322] In one embodiment, the protection circuit 22 may include a short current protection (SCP) circuit. The short current protection circuit may protect the power conversion unit 181 from a short circuit current.

[0323] In one embodiment, the protection circuit 22 may include an overcurrent protection (OCP) circuit. The overcurrent protection circuit may protect the power conversion unit 181 from an overcurrent.

[0324] In one embodiment, the protection circuit 22 may include a thermal shutdown (TSD) circuit, which may shut down the circuit for protection purposes when the temperature of the IC exceeds a specified value due to, for example, an overcurrent.

[0325] The pulse width modulation circuit 23 performs the core function of the control circuit 20. The pulse width modulation circuit 23 generates a pulse width modulation (PWM) signal, which is a switching signal required to output a constant output voltage VO in an arbitrary input voltage range. In response to the PWM signal generated by the pulse width modulation circuit 23, the first switch 41 and the second switch 42 are selectively turned on or off to generate a voltage signal VSW. The voltage signal outputted through one terminal SW of the IC chip 500 can be supplied to the active circuit unit 131 as an output DC voltage VO through the filter unit 183 and the feedback unit 182.

[0326] According to one embodiment, the pulse width modulation circuit 23 may include a band gap reference (BGR) block, a ramp generator block, an error amplifier (EA), a comparator, and an RS latch.

[0327] In one embodiment, the BGR (band gap reference) block is a voltage bias circuit for outputting a constant voltage VREF even when the temperature or voltage changes. The BGR block can supply a constant voltage VREF to the error amplifier EA even when the temperature or voltage changes.

[0328] The ramp generator block can generate the ramp signal VRAMP and the clock CLK signal required to generate the PWM signal.

[0329] The error amplifier EA is an amplifier necessary for the feedback circuit. One of the input terminals of the error amplifier EA can be connected to the feedback unit 182 via one terminal FB of the IC chip 500. The feedback unit 182 outside the IC chip 500 can be connected to the non-inverting terminal of the error amplifier EA via the FB terminal of the IC chip 500.

[0330] The comparator may output a digital signal based on a comparison between the output signal EA_OUT of the error amplifier EA and the ramp signal VRAMP. Meanwhile, the output terminal of the error amplifier EA may form a terminal EAO of the IC chip 500. The feedback unit 182 outside the IC chip 500 may be connected to the output end of the error amplifier EA via the terminal EAO. The terminal EAO may correspond to a non-inverting terminal of the input terminals of the comparator.

[0331] The RS latch can transmit a PWM signal to the switch unit 40 based on the clock CLK signal.

[0332] The PWM signal can turn on the first switch 41 and the second switch 42 in response to an on or off digital signal. In this case, if the first switch 41 and the second switch 42 are turned on simultaneously even for a short time, the MOSFET may be damaged due to overcurrent. Therefore, in order to prevent the first and second switches 41 and 42 from being turned on simultaneously, the switch unit 40 may include a non-overlap circuit 46.

[0333] The PWM signal output from the RS latch can be transmitted to a non-overlap circuit 46 of the switch unit 40. The non-overlap circuit 46 can generate a very short time period during which both the first switch 41 and the second switch 42 are off. The short time period can be called a dead-time, and can be, for example, several tens of nanoseconds (nsec). The non-overlap circuit 46 can be called a dead-time generator.

[0334] Meanwhile, the first and second switches 41 and 42 can be MOSFETs. The first switch 41 can be a high side MOSFET, and the second switch 42 can be a low side MOSFET. Since the input capacitance of the gate terminal of a MOSFET is large, the first and second drivers 43 and 44 having sufficient output can be disposed at the front end of the MOSFET.

[0335] Meanwhile, the control circuit 20 may further include a zero current detector 24 .

[0336] In a situation where 0 A or a reverse current occurs in the second switch 42, which is a low-side MOSFET, the power management unit 180 must operate in discontinuous current mode (DCM) for efficiency. To this end, the zero current detector 24 can cut off the PWM signal input to the second switch 42 when a reverse current is detected in the second switch 42.

[0337] On the other hand, the control circuit 20 may further include a soft start circuit 25 .

[0338] If the power management unit 180 (i.e., the converter) is suddenly driven in the off state, a voltage is instantaneously applied to the output capacitor, etc., causing an overcurrent, which may cause a breakdown in the MOSFET, etc. To prevent this, the soft start circuit 25 can slowly increase the output voltage, etc., even in a situation where the converter is suddenly driven.

[0339] 16 is a schematic diagram showing the configuration of an active current compensation device 100A-2 according to another embodiment of the present invention. In the following, a description of the contents that overlap with the contents described with reference to FIGS. 10 to 15 will be omitted.

[0340] 16, the active current compensation device 100A-2 can actively compensate for first currents I11, I12, and I13 input in common mode to large current paths 111, 112, and 113 connected to a first device 300, respectively.

[0341] To this end, the active current compensation device 100A-2 may include three large current paths 111, 112, and 113, a sensing transformer 120A-2, an amplifier section 130A, a compensation transformer 140A, and a compensation capacitor section 150A-2.

[0342] Compared with the active current compensation apparatuses 100A and 100A-1 according to the above-described embodiments, the active current compensation apparatus 100A-2 according to the embodiment shown in Fig. 16 includes three large current paths 111, 112, and 113, and therefore has differences in the sensing transformer 120A-2 and the compensation capacitor unit 150A-2. Therefore, the following description of the active current compensation apparatus 100A-2 will focus on the above-mentioned differences.

[0343] The active current compensation device 100A-2 may include a first large current path 111, a second large current path 112, and a third large current path 113, which are distinct from one another. According to an embodiment, the first large current path 111 may be an R-phase power line, the second large current path 112 may be an S-phase power line, and the third large current path 113B may be a T-phase power line. The first currents I11, I12, and I13 may be input in common mode to the first large current path 111, the second large current path 112, and the third large current path 113, respectively.

[0344] The primary side 121A-2 of the sensing transformer 120A-2 is disposed on the first, second, and third large current paths 111, 112, and 113, respectively, and can generate an induced current on the secondary side 122A-2. The magnetic flux densities generated in the sensing transformer 120A-2 by the first currents I11, I12, and I13 on the three large current paths 111, 112, and 113 can reinforce each other.

[0345] In the active current compensation device 100A-2 according to the embodiment shown in FIG. 16, the amplifier section 130A can correspond to the amplifier section 130A described above.

[0346] The compensation capacitor unit 150A-2 can provide paths through which the compensation currents IC1, IC2, and IC3 generated by the compensation transformer 140A flow to the first, second, and third large current paths 111, 112, and 113, respectively.

[0347] The active current compensation apparatus 100A-2 may further include a decoupling capacitor unit 170A-2 on the output side (i.e., the second device 200 side). One end of each capacitor included in the decoupling capacitor unit 170A-2 may be connected to the first large current path 111, the second large current path 112, and the third large current path 113, respectively. The opposite end of each capacitor may be connected to a first reference potential 601 of the current compensation apparatus 100A-2.

[0348] The decoupling capacitor section 170A-2 can prevent the output performance of the compensation current of the active current compensation device 100A-2 from fluctuating significantly due to changes in the impedance value of the second device 200. The impedance ZY of the decoupling capacitor section 170A-2 can be designed to have a value smaller than a value designated in the first frequency band targeted for noise reduction. By coupling the decoupling capacitor section 170A-2, the current compensation device 100A-2 can be used as an independent module in any system (e.g., three-phase three-wire system).

[0349] According to one embodiment, the decoupling capacitor section 170A-2 may be omitted in the active current compensation device 100A-2.

[0350] The active current compensation device 100A-2 according to such an embodiment can be used to compensate (or cancel) the first currents I11, I12, I13 transferred to a power source at a load in a three-phase, three-wire power system.

[0351] It goes without saying that the active current compensation devices according to the various embodiments of the present invention can be modified so as to be applicable to a three-phase four-wire system according to the technical concept of the present invention.

[0352] In various embodiments of the present invention, the active circuit unit 131A included in the amplifier unit 130A and the power conversion unit 181 included in the power management unit 180 can be physically integrated into one IC chip 500. Even if a voltage VI in an arbitrary range is input from the power supply device 400, the IC chip 500 can convert the voltage VI into a voltage VO optimized for driving the internal active circuit unit 131A via the power conversion unit 181 to drive the active circuit unit 131A. Therefore, the IC chip 500 can be put into practical use with versatility as an independent component. In addition, the active circuit unit 131A included in the amplifier unit 130A can operate stably regardless of the characteristics of the surrounding system.

[0353] [3] An active current compensation device including an integrated circuit part and a non-integrated circuit part 17 is a diagram illustrating a schematic configuration of a system including an active current compensation apparatus 100 according to an embodiment of the present invention. The active current compensation apparatus 100 can actively compensate for first currents I11, I12 (e.g., EMI noise currents) input to a common mode (CM) from a first device 300 via a plurality of large current paths 111, 112.

[0354] Referring to FIG. 17, the active current compensation device 100 may include a sensing unit 120, an amplifying unit 130 and a compensating unit 160.

[0355] In this specification, the first device 300 may be various types of power systems that use the power source supplied by the second device 200. For example, the first device 300 may be a load that is driven by the power source supplied by the second device 200. In addition, the first device 300 may be a load (e.g., an electric vehicle) that stores energy using the power source supplied by the second device 200 and is driven by using the stored energy. However, the first device 300 is not limited thereto.

[0356] The second device 200 in this specification can be a system of various forms for supplying power in the form of current and / or voltage to the first device 300. The second device 200 can also be, but is not limited to, a device that supplies stored energy.

[0357] A power converter may be located on the first device 300 side. For example, the first currents I11 and I12 may be input to the current compensation device 100 by a switching operation of the power converter. That is, the first device 300 side may correspond to a noise source, and the second device 200 side may correspond to a noise receiver.

[0358] The two or more high current paths 111, 112 may be paths that transmit the power source supplied by the second device 200, i.e., the second currents I21, I22, to the first device 300, and may be, for example, power lines. For example, each of the two or more high current paths 111, 112 may be a live line and a neutral line. At least a part of the high current paths 111, 112 may pass through the current compensation device 100. The second currents I21, I22 may be AC ​​currents having a frequency in a second frequency band. The second frequency band may be, for example, a 50 Hz to 60 Hz band.

[0359] In addition, the two or more high current paths 111, 112 may be paths through which noise generated in the first device 300, i.e., the first currents I11, I12, are transmitted to the second device 200. The first currents I11, I12 may be input in a common mode to each of the two or more high current paths 111, 112. The first currents I11, I12 may be currents unintentionally generated in the first device 300 due to various causes. For example, the first currents I11, I12 may be noise currents generated by a virtual capacitance between the first device 300 and the surrounding environment. Alternatively, the first currents I11, I12 may be noise currents generated by a switching operation of a power conversion device of the first device 300. The first currents I11, I12 may be currents having a frequency in a first frequency band. The first frequency band may be a frequency band higher than the above-mentioned second frequency band. The first frequency band may be, for example, a 150 KHz to 30 MHz band.

[0360] Meanwhile, the two or more high current paths 111, 112 may include two paths as shown in Fig. 17, or may include three or four paths as shown in Fig. 20 and Fig. 22. The number of high current paths 111, 112 may vary depending on the type and / or form of the power source used by the first device 300 and / or the second device 200.

[0361] The sensing unit 120 may detect the first currents I11 and I12 on the two or more high current paths 111 and 112 and generate output signals corresponding to the first currents I11 and I12. That is, the sensing unit 120 may mean a means for detecting the first currents I11 and I12 on the high current paths 111 and 112. At least a part of the high current paths 111 and 112 may pass through the sensing unit 120 to sense the first currents I11 and I12, but a part of the sensing unit 120 where an output signal is generated by sensing may be insulated from the high current paths 111 and 112. For example, the sensing unit 120 may be embodied as a sensing transformer. The sensing transformer may detect the first currents I11 and I12 on the high current paths 111 and 112 while being insulated from the high current paths 111 and 112. However, the sensing unit 120 is not limited to a sensing transformer.

[0362] According to an embodiment, the sensing unit 120 may be differentially connected to an input terminal of the amplification unit 130 .

[0363] The amplifier 130 is electrically connected to the sensing unit 120 and may amplify an output signal output from the sensing unit 120 to generate an amplified output signal. In the present invention, "amplification" by the amplifier 130 may mean adjusting the magnitude and / or phase of an object to be amplified. The amplifier 130 may be embodied by various means and may include active elements. In one embodiment, the amplifier 130 may include a BJT (Bipolar Junction Transistor). For example, the amplifier 130 may include a plurality of passive elements such as resistors and capacitors in addition to the BJT. However, the present invention is not limited thereto, and any means for "amplification" described in the present invention may be used without limitation as the amplifier 130 of the present invention.

[0364] According to an embodiment, the second reference potential 602 of the amplifier 130 and the first reference potential 601 of the current compensation device 100 can be distinguished from each other. For example, when the amplifier 130 is insulated from the large current paths 111 and 112, the second reference potential 602 of the amplifier 130 and the first reference potential 601 of the current compensation device 100 can be distinguished from each other.

[0365] However, the present invention is not limited to this. For example, as shown in Fig. 22, when the amplifier 130B is not insulated from the large current paths 111 and 112, the reference potential of the amplifier 130B and the reference potential of the current compensation device 100B may not be distinguished.

[0366] The amplifier unit 130 according to various embodiments of the present invention may include an integrated circuit unit 131 and a non-integrated circuit unit 132. The integrated circuit unit 131 may include essential components of the active current compensation device 100. The essential components may include, for example, active elements. Thus, the active elements included in the amplifier unit 130 may be integrated in the integrated circuit unit 131 of the amplifier unit 130. The non-integrated circuit unit 132 of the amplifier unit 130 may not include active elements. The integrated circuit unit 131 may include not only active elements but also passive elements.

[0367] The integrated circuit unit 131 according to an embodiment of the present invention may be physically one IC chip. The integrated circuit unit 131 according to an embodiment of the present invention may be applied to active current compensation devices 100 of various designs. The one-chip integrated circuit unit 131 according to an embodiment of the present invention may be applied to current compensation devices 100 of various designs with versatility as an independent module.

[0368] The non-integrated circuit portion 132 according to the embodiment of the present invention may vary depending on the design of the active current compensation device 100 .

[0369] The integrated circuit unit 131 may include a terminal for connection to the non-integrated circuit unit 132. The integrated circuit unit 131 and the non-integrated circuit unit 132 may be coupled to each other to function as the amplifier unit 130. The combination of the integrated circuit unit 131 and the non-integrated circuit unit 132 may perform a function of generating an amplified signal from an output signal output from the sensing unit 120. The amplified signal may be input to the compensation unit 160.

[0370] An example of a detailed configuration of the amplifier section 130 including the integrated circuit section 131 and the non-integrated circuit section 132 will be described later with reference to FIGS.

[0371] As previously mentioned, the active current compensation apparatus 100 according to various embodiments is characterized by a distinction between integrated circuit and non-integrated circuit portions.

[0372] The amplifier 130 may be supplied with power from a power supply device 400 that is distinct from the first device 300 and / or the second device 200. The amplifier 130 may receive power from the power supply device 400 and amplify an output signal output from the sensing unit 120 to generate an amplified current.

[0373] The power supply device 400 may be a device that receives power from a power source independent of the first device 300 and the second device 200 and generates input power for the amplifier unit 130. Alternatively, the power supply device 400 may be a device that receives power from one of the first device 300 and the second device 200 and generates input power for the amplifier unit 130.

[0374] The integrated circuit unit 131 , which is an IC chip, can include a terminal for connection to the power supply device 400 , a terminal for connection to the second reference potential 602 , and a terminal for connection to the non-integrated circuit unit 132 .

[0375] The compensation unit 160 may generate compensation currents IC1 and IC2 based on the output signal amplified by the amplifier 130. The output side of the compensation unit 160 may be connected to the large current paths 111 and 112 to flow the compensation currents IC1 and IC2 through the large current paths 111 and 112.

[0376] According to an embodiment, an output side of the compensation unit 160 may be insulated from the amplifier unit 130. For example, the compensation unit 160 may include a compensation transformer for the isolation. For example, an output signal of the amplifier unit 130 may flow through a primary side of the compensation transformer, and a compensation current based on the output signal may be generated on a secondary side of the compensation transformer.

[0377] However, the present invention is not limited to this. According to another embodiment, the output side of the compensation unit 160B may be non-insulated from the amplifier unit 130B as shown in Fig. 22. In this case, the amplifier unit 130B may be non-insulated from the large current paths 111 and 112.

[0378] 17 again, the compensating unit 160 may inject compensation currents IC1 and IC2 into the large current paths 111 and 112 through two or more large current paths 111 and 112, respectively, to cancel out the first currents I11 and I12. The compensation currents IC1 and IC2 may have the same magnitude and opposite phase as the first currents I11 and I12.

[0379] Fig. 18 shows a more specific example of the embodiment shown in Fig. 17, and is a diagram illustrating an active current compensation apparatus 100A according to one embodiment of the present invention. The active current compensation apparatus 100A can actively compensate for first currents I11, I12 (e.g., noise currents) input in common mode to two large current paths 111, 112 connected to the first device 300, respectively.

[0380] Referring to FIG. 18, an active current compensation apparatus 100A may include a sensing transformer 120A, an amplifier unit 130, and a compensation unit 160A.

[0381] In an embodiment, the sensing unit 120 may include a sensing transformer 120A. In this case, the sensing transformer 120A may be a means for detecting the first currents I11 and I12 on the large current paths 111 and 112 while being insulated from the large current paths 111 and 112. The sensing transformer 120A may sense the first currents I11 and I12, which are noise currents input from the first device 300 side to the large current paths 111 and 112 (e.g., power lines).

[0382] The sensing transformer 120A may include a primary side 121A disposed on the large current paths 111 and 112 and a secondary side 122A differentially connected to an input terminal of the amplifier unit 130. The sensing transformer 120A may generate an induced current in a secondary side 122A (e.g., a secondary winding) based on a magnetic flux density induced by a first current I11 and I12 in the primary side 121A (e.g., a primary winding) disposed on the large current paths 111 and 112. The primary side 121A of the sensing transformer 120A may be, for example, a winding in which the first large current path 111 and the second large current path 112 are wound around one core. However, the primary side 121A of the sensing transformer 120A may be a type in which the first large current path 111 and the second large current path 112 pass through the core.

[0383] Specifically, the magnetic flux density induced by the first current I11 on the first large current path 111 (e.g., live line) and the magnetic flux density induced by the first current I12 on the second large current path 112 (e.g., neutral line) can be configured to overlap (or reinforce) each other. At this time, the second currents I21 and I22 also flow through the large current paths 111 and 112, but the magnetic flux density induced by the second current I21 on the first large current path 111 and the magnetic flux density induced by the first current I22 on the second large current path 112 can be configured to cancel each other out. Also, as an example, the sensing transformer 120A can be configured so that the magnitude of the magnetic flux density induced by the first currents I11, I12 in a first frequency band (e.g., a band having a range of 150 KHz to 30 MHz) is greater than the magnitude of the magnetic flux density induced by the second currents I21, I22 in a second frequency band (e.g., a band having a range of 50 Hz to 60 Hz).

[0384] In this manner, the sensing transformer 120A is configured to cancel out the magnetic flux densities induced by the second currents I21 and I22, so that only the first currents I11 and I12 are detected. That is, the current induced in the secondary side 122A of the sensing transformer 120A may be a current obtained by converting the first currents I11 and I12 at a constant rate.

[0385] For example, in the sensing transformer 120A, if the winding ratio of the primary side 121A to the secondary side 122A is 1:Nsen, and the self-inductance of the primary side 121A of the sensing transformer 120A is Lsen, the secondary side 122A can have a self-inductance of Nsen2·Lsen. At this time, the current induced in the secondary side 122A is 1 / Nsen times the first currents I11 and I12. For example, the primary side 121A and secondary side 122A of the sensing transformer 120A can be coupled with a coupling coefficient of ksen.

[0386] The secondary side 122A of the sensing transformer 120A may be connected to an input terminal of the amplifier unit 130. For example, the secondary side 122A of the sensing transformer 120A may be differentially connected to the input terminal of the amplifier unit 130 to supply an induced current or an induced voltage to the amplifier unit 130.

[0387] The amplifier 130 may amplify a current or an induced voltage sensed by the sensing transformer 120A and induced in the secondary side 122A. For example, the amplifier 130 may amplify the magnitude of the induced current or induced voltage at a certain rate and / or adjust the phase.

[0388] According to various embodiments of the present invention, the amplifier unit 130 may include an integrated circuit unit 131 configured on one IC chip, and a non-integrated circuit unit 132 configured other than the IC chip.

[0389] According to an embodiment, the amplifier unit 130 may be connected to a second reference potential 602, which may be distinguished from a first reference potential 601 of the current compensation device 100 (or the compensation unit 160A). The amplifier unit 130 may be connected to a power supply device 400.

[0390] The IC chip that is the integrated circuit unit 131 may include a terminal for connection to the power supply device 400 , a terminal for connection to the second reference potential 602 , and a terminal for connection to the non-integrated circuit unit 132 .

[0391] The compensating unit 160A may be an example of the compensating unit 160 described above. In one embodiment, the compensating unit 160A may include a compensating transformer 140A and a compensating capacitor unit 150A. The amplified current amplified by the amplifying unit 130 described above flows to the primary side 141A of the compensating transformer 140A.

[0392] The compensation transformer 140A according to one embodiment may be a means for isolating the amplifier unit 130 including the active elements from the high current paths 111, 112. That is, the compensation transformer 140A may be a means for generating (on the secondary side 142A) a compensation current to be injected into the high current paths 111, 112 based on the amplified current while being insulated from the high current paths 111, 112.

[0393] The compensation transformer 140A may include a primary side 141A differentially connected to the output terminal of the amplifier 130, and a secondary side 142A connected to the large current paths 111 and 112. The compensation transformer 140A may induce a compensation current in the secondary side 142A (e.g., a secondary winding) based on a magnetic flux density induced by an amplified current flowing in the primary side 141A (e.g., a primary winding).

[0394] At this time, the secondary side 142A may be disposed on a path connecting the compensation capacitor unit 150A described below and a first reference potential 601 of the current compensation apparatus 100A. That is, one end of the secondary side 142A may be connected to the large current paths 111 and 112 via the compensation capacitor unit 150A, and the other end of the secondary side 142A may be connected to the first reference potential 601 of the active current compensation apparatus 100A. Meanwhile, the primary side 141A of the compensation transformer 140A, the amplifier unit 130, and the secondary side 122A of the sensing transformer 120A may be connected to a second reference potential 602 that is distinguished from the remaining components of the active current compensation apparatus 100A. The first reference potential 601 of the current compensation apparatus 100A according to an embodiment may be distinguished from the second reference potential 602 of the amplifier unit 130.

[0395] In this manner, the current compensation apparatus 100A according to one embodiment uses a reference potential (i.e., second reference potential 602) for the components generating the compensation current that is different from that for the remaining components, and uses a separate power supply device 400, thereby allowing the components generating the compensation current to operate in an isolated state, thereby improving the reliability of the active current compensation apparatus 100A. However, the active compensation apparatus including the integrated circuit unit 131 and the non-integrated circuit unit 132 according to the present invention is not limited to such an isolated structure. An active current compensation apparatus 100B having a non-insulated structure according to another embodiment of the present invention will be described later with reference to FIG. 22.

[0396] In the compensation transformer 140A according to an embodiment, if the winding ratio of the primary side 141A to the secondary side 142A is 1:Ninj, and the self-inductance of the primary side 141A of the compensation transformer 140A is Linj, the secondary side 142A may have a self-inductance of Ninj2.Linj. At this time, the current induced in the secondary side 142A is 1 / Ninj times the current (i.e., the amplified current) flowing in the primary side 141A. The primary side 141A and the secondary side 142A of the compensation transformer 140A may be coupled with a coupling coefficient of kinj.

[0397] The current converted through the compensation transformer 140A can be injected as compensation currents IC1, IC2 into the large current paths 111, 112 (e.g., power lines) through the compensation capacitor unit 150A. Therefore, the compensation currents IC1, IC2 can have the same magnitude and opposite phase as the first currents I11, I12 to cancel the first currents I11, I12. Therefore, the magnitude of the current gain of the amplifier unit 130 can be designed to be Nsen.Ninj.

[0398] The compensation capacitor unit 150A can provide a path through which the current generated by the compensation transformer 140A flows to each of the two large current paths 111 and 112, as described above.

[0399] The compensation capacitor unit 150A may include two Y-capacitors (Y-capacitors) having one end connected to the secondary side 142A of the compensation transformer 140A and the other end connected to the large current paths 111 and 112. One end of each of the two Y-caps may share a node connected to the secondary side 142A of the compensation transformer 140A, and the opposite ends of each of the two Y-caps may have nodes connected to the first large current path 111 and the second large current path 112, respectively.

[0400] The compensation capacitor unit 150A can cause the compensation currents IC1 and IC2 induced by the compensation transformer 140A to flow through the power line. The compensation currents IC1 and IC2 compensate (or cancel) the first currents I11 and I12, so that the current compensation device 100A can reduce noise.

[0401] On the other hand, the compensation capacitor section 150A can be configured so that the current IL1 flowing between the two large current paths 111, 112 via the compensation capacitor is less than a first threshold value. Also, the compensation capacitor section 150A can be configured so that the current IL2 flowing between each of the two large current paths 111, 112 and the first reference potential 601 via the compensation capacitor is less than a second threshold value.

[0402] The active current compensation device 100A according to one embodiment can achieve an isolated structure by using a compensation transformer 140A and a sensing transformer 120A.

[0403] Fig. 19 shows a more specific example of the embodiment shown in Fig. 18, and is a diagram illustrating roughly an active current compensation apparatus 100A-1 according to one embodiment of the present invention. The active current compensation apparatus 100A-1 shown in Fig. 19 is an example of the active current compensation apparatus 100A shown in Fig. 18. The amplifier section 130A included in the active current compensation apparatus 100A-1 is an example of the amplifier section 130 of the active current compensation apparatus 100A.

[0404] The active current compensation apparatus 100A-1 according to an embodiment may include a sensing transformer 120A, an amplifier unit 130A, a compensation transformer 140A, and a compensation capacitor unit 150A. In an embodiment, the active current compensation apparatus 100A-1 may further include a decoupling capacitor unit 170A on the output side (i.e., the second device 200 side). In other embodiments, the decoupling capacitor unit 170A may be omitted. Descriptions of the sensing transformer 120A, the compensation transformer 140A, and the compensation capacitor unit 150A will be omitted to avoid duplication.

[0405] The amplifier unit 130A of the active current compensation device 100A-1 according to an embodiment may include an integrated circuit unit 131A and a non-integrated circuit unit. The remaining components of the amplifier unit 130A, except for the integrated circuit unit 131A, may be included in the non-integrated circuit unit. For example, the components included in the non-integrated circuit unit of the amplifier unit 130A may be, but are not limited to, discrete practical elements.

[0406] In one embodiment, the integrated circuit portion 131A may include a first transistor 11, a second transistor 12, and / or one or more resistors. In one embodiment, the first transistor 11 may be an npn BJT, and the second transistor 12 may be a pnp BJT. For example, the amplifier portion 130A may have a push-pull amplifier structure including an npn BJT and a pnp BJT.

[0407] For example, the one or more resistors included in the integrated circuit portion 131A may include Rnpn, Rpnp, and / or Re. For example, the resistor Rnpn may connect the collector terminal and the base terminal of the first transistor 11, the resistor Rpnp may connect the collector terminal and the base terminal of the second transistor 12, and the resistor Re may connect the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12.

[0408] In one embodiment, the integrated circuit unit 131A of the amplifier unit 130A may further include a diode 13 in addition to the first transistor 11, the second transistor 12, and one or more resistors. For example, one end of the diode 13 may be connected to the base terminal of the first transistor 11, and the other end of the diode 13 may be connected to the base terminal of the second transistor 12. In an alternative embodiment, the diode 13 may be replaced with a resistor.

[0409] In one embodiment, resistors Rnpn, Rpnp, Re and / or bias diode 13 included in integrated circuit portion 131A can be used for DC bias of the BJT. The above components are general-purpose configurations in various active current compensation devices, so they can be integrated into a one-chip integrated circuit portion 131A.

[0410] The configuration of the amplifier unit 130A excluding the integrated circuit unit 131A may be included in the non-integrated circuit unit. The integrated circuit unit 131A may be physically embodied as one IC chip. The non-integrated circuit unit may be composed of discrete practical elements. The non-integrated circuit unit may be embodied in different ways depending on the embodiment.

[0411] In the embodiment shown in FIG. 19, the non-integrated circuitry may include, for example, capacitors Cb, Ce and Cdc, and impedances Z1 and Z2.

[0412] In one embodiment, an induced current induced in the secondary side 122A by the sensing transformer 120A may be differentially input to the amplifier 130A. The capacitors Cb and Ce included in the amplifier 130A may selectively couple only an alternating current (AC) signal. The capacitors Cb and Ce may block DC voltages at the base and emitter nodes of the first and second transistors 11 and 12.

[0413] In one embodiment, the power supply 400 provides a direct current (DC) voltage Vdc referenced to a second reference potential 602 to drive the amplifier section 130A. A capacitor Cdc is a DC decoupling capacitor for the voltage Vdc and can be connected in parallel between the power supply 400 and the second reference potential 602. The capacitor Cdc can selectively couple only AC signals between the collectors of both the first transistor 11 (e.g., an npn BJT) and the second transistor 12 (e.g., a pnp BJT).

[0414] The current gain of the amplifier unit 130A can be controlled by the ratio of impedances Z1 and Z2. Therefore, Z1 and Z2 can be implemented outside the one-chip integrated circuit unit 131A. Z1 and Z2 can be flexibly designed according to a required target current gain depending on the winding ratio of the sensing transformer 120A and the compensation transformer 140A.

[0415] In the integrated circuit unit 131A, the resistors Rnpn, Rpnp, and Re can adjust the operating points of the first transistor 11 and the second transistor 12 (for example, BJT). The resistors Rnpn, Rpnp, and Re can be designed according to the operating point of the BJT. The resistor Rnpn is a collector terminal of the first transistor 11 (for example, npn BJT), and can connect the power supply device 400 terminal and the base terminal of the first transistor 11 (for example, npn BJT). The resistor Rpnp is a collector terminal of the second transistor 12 (for example, pnp BJT), and can connect the second reference potential 602 and the base terminal of the second transistor 12 (for example, pnp BJT). The resistor Re can connect the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12.

[0416] The secondary side 122A of the sensing transformer 120A according to an embodiment may be connected between the base side and the emitter side of the first transistor 11 and the second transistor 12. The primary side 141A of the compensation transformer 140A according to an embodiment may be connected between the collector side and the base side of the first transistor 11 and the second transistor 12. Here, the connection includes the case where the connection is indirect. The amplifier unit 130A according to an embodiment may have a recurrent structure that injects the output current again into the bases of the first transistor 11 and the second transistor 12. Because of the recurrent structure, the amplifier unit 130A may stably obtain a constant current gain for the operation of the active current compensation device 100A-1.

[0417] When the input voltage of the noise signal amplifier 130A is a positive swing greater than 0, the first transistor 11 (e.g., an npn BJT) can operate. At this time, the operating current can flow via a first path through the first transistor 11. When the input voltage of the noise signal amplifier 130A is a negative swing less than 0, the second transistor 12 (e.g., a pnp BJT) can operate. At this time, the operating current can flow via a second path through the second transistor 12.

[0418] The integrated circuit unit 131A may be implemented as a one-chip IC. According to an embodiment, the first transistor 11, the second transistor 12, and the diode 13, Rnpn, Rpnp, and Re of the integrated circuit unit 131A may be integrated into a one-chip IC.

[0419] The one-chip IC may include a terminal b1 corresponding to the base of the first transistor 11, a terminal c1 corresponding to the collector of the first transistor 11, a terminal e1 corresponding to the emitter of the first transistor 11, a terminal b2 corresponding to the base of the second transistor 12, a terminal c1 corresponding to the collector of the second transistor 12, and a terminal e1 corresponding to the emitter of the second transistor 12. However, without being limited thereto, the one-chip of the integrated circuit unit 131A may further include other terminals in addition to the terminals b1, b2, c1, c2, e1, and e2.

[0420] In various embodiments, at least one of terminals b1, b2, c1, c2, e1, and e2 of integrated circuit portion 131A can be connected to a non-integrated circuit portion. Integrated circuit portion 131A and the non-integrated circuit portion can be coupled to each other to function as an amplifier portion 130A according to an embodiment.

[0421] According to the embodiment shown in Fig. 19, a non-integrated capacitor Cb can be connected to the base terminal b1 of the first transistor 11 and the base terminal b2 of the second transistor 12, respectively. A non-integrated capacitor Ce can be connected to the emitter terminal e1 of the first transistor 11 and the emitter terminal e2 of the second transistor 12, respectively. An external power supply 400 can be connected between the collector terminal c1 of the first transistor 11 and the collector terminal c2 of the second transistor 12. The collector terminal c2 of the second transistor 12 can correspond to a second reference potential 602. A non-integrated decoupling capacitor Cdc can be connected between the collector terminal c1 of the first transistor 11 and the collector terminal c2 of the second transistor 12.

[0422] The combination of the integrated circuit section 131A and the non-integrated circuit sections Cb, Ce, Cdc, Z1, and Z2 can function as an amplifier section 130A according to the embodiment shown in FIG.

[0423] According to various embodiments of the present invention, essential components of the active current compensation apparatus 100A, 100A-1 can be integrated into a one-chip integrated circuit unit 131A. Therefore, by using the one-chip integrated circuit unit 131, 131A, the size of the amplifier unit 130, 130A can be minimized compared to the case where discrete semiconductor devices are used.

[0424] The inductors, capacitors (eg, Cb, Ce, Cdc), Z1 and Z2 of the non-integrated circuit unit are discrete components and may be implemented on the periphery of the one-chip integrated circuit unit 131A.

[0425] The capacitance required for the capacitors Cb, Ce, and Cdc to couple an AC signal may be several μF or more (e.g., 10 μF). Since this capacitance value is difficult to realize within a one-chip integrated circuit, the capacitors Cb, Ce, and Cdc may be realized outside the integrated circuit, i.e., in a non-integrated circuit.

[0426] The impedances Z1 and Z2 may be implemented outside the integrated circuit unit, i.e., in a non-integrated circuit unit, to achieve design flexibility for various power systems or various first devices 300. Z1 and Z2 may be flexibly designed according to the required target current gain depending on the winding ratio of the sensing transformer 120A and the compensation transformer 140A. By adjusting the impedances Z1 and Z2, various current compensation devices may be designed that allow the same integrated circuit unit 131A to be applied to various power systems. In particular, the size and impedance characteristics of the sensing transformer 120A must change depending on the maximum rated current of the first device 300. Therefore, in order to make the ratio of the injection current to the sensing noise current uniform over a wide frequency range, appropriate design of Z1 and Z2 is required. By adjusting the winding ratio of the sensing transformer 120A and the compensation transformer 140A and the ratio of Z1 and Z2, the ratio of the injection current to the sensing noise current may be designed to be 1 over a wide frequency range. To this end, impedances Z1 and Z2 may be implemented external to integrated circuit portion 131A for design flexibility. In one embodiment, Z1 and Z2 may each comprise a series connection of a resistor and a capacitor.

[0427] The integrated circuit unit 131A according to various embodiments of the present invention is designed for scalability and can be used in various types of active current compensation devices. For example, the integrated circuit unit 131A can be used in the current compensation device 100A-1 shown in Fig. 19, the current compensation device 100A-2 shown in Fig. 20, the current compensation device 100A-3 shown in Fig. 21, and the current compensation device 100B shown in Fig. 22. The same type of integrated circuit unit 131A can be used in various embodiments, and the non-integrated circuit unit can be designed differently depending on the embodiment.

[0428] In various embodiments of the present invention, by using an amplifier unit 130 that is divided into an integrated circuit unit and a non-integrated circuit unit, various types of active current compensation devices can be mass-produced through mass production of the integrated circuit unit, and the size of the active current compensation device can be minimized.

[0429] Thus, the active current compensation apparatus 100, 100A, 100A-1, 100A-2, 100A-3, 100B according to various embodiments are characterized by a distinction between integrated circuit and non-integrated circuit portions.

[0430] Meanwhile, the active current compensation apparatus 100A-1 may further include a decoupling capacitor unit 170A on the output side (i.e., the second device 200 side). One end of each capacitor included in the decoupling capacitor unit 170A may be connected to the first large current path 111 and the second large current path 112, respectively. The opposite end of each capacitor may be connected to a first reference potential 601 of the current compensation apparatus 100A-1.

[0431] The decoupling capacitor section 170A can prevent the output performance of the compensation current of the active current compensation device 100A-1 from fluctuating significantly due to changes in the impedance value of the second device 200. The impedance ZY of the decoupling capacitor section 170A can be designed to have a value smaller than a value designated in the first frequency band targeted for noise reduction. By coupling the decoupling capacitor section 170A, the current compensation device 100A-1 can be used as an independent module in any system.

[0432] According to one embodiment, the decoupling capacitor section 170A may be omitted in the active current compensation device 100A-1.

[0433] Fig. 20 is a diagram illustrating a schematic configuration of an active current compensation device 100A-2 according to another embodiment of the present invention. In the following, description of contents that overlap with the contents described with reference to Figs. 18 to 19 will be omitted.

[0434] 20, the active current compensation device 100A-2 can actively compensate for first currents I11, I12, and I13 input in common mode to large current paths 111, 112, and 113 connected to a first device 300, respectively.

[0435] To this end, the active current compensation device 100A-2 may include three large current paths 111, 112, and 113, a sensing transformer 120A-2, an amplifier section 130A, a compensation transformer 140A, and a compensation capacitor section 150A-2.

[0436] Compared with the active current compensation apparatuses 100A and 100A-1 according to the above-described embodiments, the active current compensation apparatus 100A-1 according to the embodiment shown in Fig. 20 includes three large current paths 111, 112, and 113, and therefore has differences in the sensing transformer 120A-2 and the compensation capacitor unit 150A-2. Therefore, the following description of the active current compensation apparatus 100A-2 will focus on the above-mentioned differences.

[0437] The active current compensation device 100A-2 may include a first large current path 111, a second large current path 112, and a third large current path 113, which are distinct from one another. According to an embodiment, the first large current path 111 may be an R-phase power line, the second large current path 112 may be an S-phase power line, and the third large current path 113B may be a T-phase power line. The first currents I11, I12, and I13 may be input in common mode to the first large current path 111, the second large current path 112, and the third large current path 113, respectively.

[0438] The primary side 121A-2 of the sensing transformer 120A-2 is disposed on the first, second, and third large current paths 111, 112, and 113, respectively, and can generate an induced current on the secondary side 122A-2. The magnetic flux densities generated in the sensing transformer 120A-2 by the first currents I11, I12, and I13 on the three large current paths 111, 112, and 113 can reinforce each other.

[0439] In the active current compensation device 100A-2 according to the embodiment shown in FIG. 20, the amplifier section 130A can correspond to the amplifier section 130A described above.

[0440] The compensation capacitor unit 150A-2 can provide paths through which the compensation currents IC1, IC2, and IC3 generated by the compensation transformer 140A flow to the first, second, and third large current paths 111, 112, and 113, respectively.

[0441] The active current compensation apparatus 100A-2 may further include a decoupling capacitor unit 170A-2 on the output side (i.e., the second device 200 side). One end of each capacitor included in the decoupling capacitor unit 170A-2 may be connected to the first large current path 111, the second large current path 112, and the third large current path 113, respectively. The opposite end of each capacitor may be connected to a first reference potential 601 of the current compensation apparatus 100A-2.

[0442] The decoupling capacitor section 170A-2 can prevent the output performance of the compensation current of the active current compensation device 100A-2 from fluctuating significantly due to changes in the impedance value of the second device 200. The impedance ZY of the decoupling capacitor section 170A-2 can be designed to have a value smaller than a value designated in the first frequency band targeted for noise reduction. By coupling the decoupling capacitor section 170A-2, the current compensation device 100A-2 can be used as an independent module in any system (e.g., three-phase three-wire system).

[0443] According to one embodiment, the decoupling capacitor section 170A-2 may be omitted in the active current compensation device 100A-2.

[0444] The active current compensation device 100A-2 according to such an embodiment can be used to compensate (or cancel) the first currents I11, I12, I13 transferred to a power source at a load in a three-phase, three-wire power system.

[0445] It goes without saying that the active current compensation devices according to the various embodiments of the present invention can be modified so as to be applicable to a three-phase four-wire system according to the technical concept of the present invention.

[0446] The amplifier unit 130A according to one embodiment of the present invention can be applied to a single-phase (two-wire) system shown in Fig. 18, a three-phase three-wire system shown in Fig. 19, and a three-phase four-wire system (not shown). Since the one-chip integrated circuit unit 131A can be applied to a plurality of systems, the integrated circuit unit 131A can have versatility in active current compensation devices according to various embodiments.

[0447] 19, the integrated circuit unit 131A may include a first transistor 11, a second transistor 12, and / or one or more resistors. In other embodiments, the integrated circuit unit 131A may further include a diode 13. In an alternative embodiment, the diode 13 may be replaced by a resistor.

[0448] The IC chip having the integrated circuit unit 131A built therein may include a base terminal b1 of the first transistor 11, a collector terminal c1 of the first transistor 11, an emitter terminal e1 of the first transistor 11, a base terminal b2 of the second transistor 12, a collector terminal c1 of the second transistor 12, and an emitter terminal e1 of the second transistor 12. However, without being limited thereto, the one chip of the integrated circuit unit 131A may further include other terminals in addition to the terminals b1, b2, c1, c2, e1, and e2.

[0449] The integrated circuit portion 131A may be combined with non-integrated circuit portions including discrete components such as inductors, capacitors (e.g., Cb, Ce, Cdc), Z1, and Z2 to form a current compensation device according to various embodiments. For example, the discrete components of the non-integrated circuit portions may be, but are not limited to, common practical elements.

[0450] Discrete components such as inductors, capacitors (eg, Cb, Ce, Cdc), Z1 and Z2 are implemented on the periphery of an IC chip in which integrated circuit unit 131A is embedded.

[0451] The capacitance required for the capacitors Cb, Ce, and Cdc to couple low frequency AC signals may be several μF or more. Since this capacitance value is difficult to realize within an IC chip in which the integrated circuit unit 131A is built, the capacitors Cb, Ce, and Cdc may be realized outside the integrated circuit unit, i.e., in a non-integrated circuit unit.

[0452] The impedances Z1 and Z2 may be implemented outside the integrated circuit unit, i.e., in a non-integrated circuit unit, to achieve design flexibility for various first devices 300. By adjusting the impedances Z1 and Z2, various current compensation devices that allow the same integrated circuit unit 131A to be applied to various power systems can be designed. In particular, the size and impedance characteristics of the sensing transformer 120A must be changed according to the maximum rated current of the first device 300. Therefore, in order to make the ratio of the injection current to the sensing noise current uniform in a wide frequency range, appropriate design of Z1 and Z2 is required. Therefore, Z1 and Z2 may be implemented outside the integrated circuit unit 131A, i.e., in a non-integrated circuit unit, to achieve design flexibility. In one embodiment, Z1 may be a series connection of a resistor R1 and a capacitor C1, and Z2 may be a series connection of a resistor R2 and a capacitor C2. Since C1 and C2 are further implemented in series next to R1 and R2, respectively, the ratio of the injection current to the sensing noise current in the low frequency range may have better performance.

[0453] Fig. 21 is a diagram illustrating a schematic configuration of an active current compensation apparatus 100A-3 according to still another embodiment of the present invention. In the following, description of contents that overlap with the contents described with reference to Figs. 18 to 19 will be omitted.

[0454] 21, the active current compensation device 100A-3 can actively compensate for first currents I11 and I12 input in common mode to large current paths 111 and 112 connected to a first device 300, respectively.

[0455] To this end, the active current compensation device 100A-3 may include two large current paths 111, 112, a sensing transformer 120A, an amplifier section 130A-3, a compensation transformer 140A, and a compensation capacitor section 150A.

[0456] The active current compensation apparatus 100A-3 may be an example of the active current compensation apparatus 100A shown in Fig. 18. The amplifying section 130A-3 may be an example of the amplifying section 130 shown in Fig. 18.

[0457] The amplifier unit 130A-3 of the active current compensation device 100A-3 according to an embodiment may include an integrated circuit unit 131A and a non-integrated circuit unit. The remaining components of the amplifier unit 130A-3, except for the integrated circuit unit 131A, may be included in the non-integrated circuit unit.

[0458] The integrated circuit unit 131A can correspond to the integrated circuit unit 131A described above. That is, the integrated circuit unit 131A described above can also be applied to the active current compensation device 100A-3 according to the embodiment shown in Fig. 21. Therefore, the description of the integrated circuit unit 131A will be simplified to avoid duplication.

[0459] As described above, the integrated circuit unit 131A may include the first transistor 11, the second transistor 12, and / or one or more resistors. In one embodiment, the first transistor 11 may be an npn BJT, and the second transistor 12 may be a pnp BJT. For example, the amplifier unit 130A-3 may have a push-pull amplifier structure including an npn BJT and a pnp BJT. The integrated circuit unit 131A may further include a diode 13 in addition to the first transistor 11, the second transistor 12, and one or more resistors. For example, one end of the diode 13 may be connected to a base terminal of the first transistor 11, and the other end of the diode 13 may be connected to a base terminal of the second transistor 12. In an alternative embodiment, the diode 13 may be replaced with a resistor.

[0460] An induced current induced in the secondary side 122A by the sensing transformer 120A may be differentially input to the amplifier 130A-3. A resistor Rin may be connected in parallel to the secondary side 122A at the input end of the amplifier 130A-3. The resistor Rin may adjust the input impedance of the amplifier 130A-3. The capacitors Cb and Ce may selectively couple only AC signals.

[0461] The power supply device 400 supplies a DC low voltage Vdc referenced to a second reference potential 602 to drive the amplifier section 130A-3. Cdc is a decoupling capacitor for DC and can be connected in parallel to the power supply device 400. Cdc can selectively couple only AC signals between the collectors of both the first transistor 11 (e.g., npn BJT) and the second transistor 12 (e.g., pnp BJT).

[0462] The resistor Rin, capacitors Cb, Ce and Cdc mentioned above may be included in non-integrated circuitry.

[0463] On the other hand, in the sensing transformer 120A, if the winding ratio of the primary side 121A to the secondary side 122A is 1:Nsen, the current induced in the secondary side 122A is 1 / Nsen times the first currents I11, I12, and in the compensation transformer 140A, if the winding ratio of the primary side 141A to the secondary side 142A is 1:Ninj, the current induced in the secondary side 142A is 1 / Ninj times the current (i.e., the amplified current) flowing in the primary side 141A. Therefore, in order to generate compensation currents IC1, IC2 that are the same in magnitude as the first currents I11, I12 but have an opposite phase to them in order to cancel out the first currents I11, I12, the current gain of the amplifier 130A-3 can be designed to be Nsen.Ninj.

[0464] Meanwhile, the current flowing between the collector and emitter of the BJT varies depending on the voltage applied between the base and emitter. When the input voltage of the noise-based amplifier 130A-3 is a positive swing greater than 0, the first transistor 11 (e.g., an npn BJT) can be operated. When the input voltage of the noise-based amplifier 130A-3 is a negative swing less than 0, the second transistor 12 (e.g., a pnp BJT) can be operated.

[0465] The active current compensation device 100A-3 according to such an embodiment can be used to compensate (or cancel) the first currents I11, I12 transferred to a power source in a load of a single-phase (two-wire) power system, but is not limited thereto.

[0466] FIG. 22 is a diagram illustrating a schematic configuration of an active current compensation apparatus 100B according to still another embodiment of the present invention.

[0467] 22, the active current compensation device 100B can actively compensate for first currents I11, I12, I13, and I14 input in common mode to large current paths 111, 112, 113, and 114 connected to a first device 300, respectively.

[0468] The active current compensation device 100B according to one embodiment may include four high current paths 111, 112, 113, 114, a noise coupling capacitor section 181, a sensing transformer 120B, an amplifier section 130B, a compensation section 160B, a compensation division capacitor section 182, and a decoupling capacitor 170B.

[0469] Unlike the current compensation apparatuses 100A, 100A-1, 100A-2, and 100A-3 according to the above-described embodiments, the active current compensation apparatus 100B can be non-insulated from the large current paths 111, 112, 113, and 114. However, the same integrated circuit unit 131A as in the above-described embodiments can be used in such an active current compensation apparatus 100B.

[0470] The active current compensation device 100B according to an embodiment may include a first large current path 111, a second large current path 112, a third large current path 113, and a fourth large current path 114, which are distinct from one another. According to an embodiment, the first large current path 111 may be an R-phase power line, the second large current path 112 may be an S-phase power line, the third large current path 113 may be a T-phase power line, and the fourth large current path 114 may be an N-phase power line. The first currents I11, I12, I13, and I14 may be input in common mode to the first large current path 111, the second large current path 112, the third large current path 113, and the fourth large current path 114, respectively.

[0471] In one embodiment, the active current compensation device 100B may include a noise coupling capacitor unit 181 on the input side (i.e., the first device 300 side). The noise coupling capacitor unit 181 may be configured with an X-capacitor (X-cap) for coupling noise between each phase.

[0472] The primary side 121B of the sensing transformer 120B is disposed in each of the first large current path 111, the second large current path 112, the third large current path 113, and the fourth large current path 114, and can generate an induced current in the secondary side 122B. The magnetic flux densities generated in the sensing transformer 120B by the first currents I11, I12, I13, and I14 on the four large current paths 111, 112, 113, and 114 can reinforce each other.

[0473] The amplifier unit 130B may be divided into an integrated circuit unit 131A and a non-integrated circuit unit. The remaining components of the amplifier unit 130B, except for the integrated circuit unit 131A, may be included in the non-integrated circuit unit. For example, the components included in the non-integrated circuit unit may be, but are not limited to, discrete practical elements.

[0474] The integrated circuit unit 131A can correspond to the integrated circuit unit 131A described above. That is, the integrated circuit unit 131A described above can also be applied to the active current compensation device 100B according to the embodiment shown in Fig. 22. Therefore, a description of the integrated circuit unit 131A will be omitted to avoid duplication.

[0475] The non-integrated circuit components of the amplifier unit 130B may be embodied differently from the previously described embodiment, in which the non-integrated circuit components may include impedances Z0, Zd, and capacitors Cb, Ce, and Cdc.

[0476] Impedances Z0 and Zd may be connected to the base side of the first transistor 11 and the second transistor 12. Here, the connection includes an indirect connection. Impedance Zd may be provided for high frequency stability. For example, Zd may be a resistor or a ferrite bead. However, this is not limited thereto. Impedance Z0 may be provided for low frequency stability. Furthermore, Z0 may block DC signals. For example, Z0 may be a series connection of a resistor and a capacitor. However, this is not limited thereto.

[0477] Meanwhile, the amplifier of the current compensation apparatus 100B is not limited to the amplifier 130B. The amplifier of the current compensation apparatus 100B may be embodied as one of the amplifiers including the amplifier 130A, the amplifier 130A-1, the amplifier 130A-2, and the amplifier 130A-3 described above, but is not limited thereto.

[0478] The compensation section 160B can inject a compensation current into one large current path (for example, the fourth large current path 114). A compensation dividing capacitor section 182 can be provided on the output side (i.e., the second device 200 side) of the active current compensation device 100B. The compensation dividing capacitor section 182 can be configured with an X-capacitor.

[0479] The active current compensation device 100B may include a decoupling capacitor 170B on the output side (i.e., the second device 200 side). The decoupling capacitor 170B may be a Y-capacitor for decoupling an AC power supply end impedance.

[0480] The active current compensation device 100B according to such an embodiment can be used to compensate (or cancel) the first currents I11, I12, I13, I14 transferred to a power source at a load in a three-phase four-wire power system.

[0481] The active current compensation apparatus 100, 100A, 100A-1, 100A-2, 100A-3, 100B according to various embodiments results in only a small increase in size and heat in high power systems compared to passive EMI filters.

[0482] The active current compensation apparatus according to various embodiments includes one-chip integrated circuit units 131 and 131A, so that the size of the active current compensation apparatus can be minimized compared to the case where a discrete semiconductor device is included. The integrated circuit unit 131A can be universally and generally applied to the active current compensation apparatus including the active current compensation apparatuses 100, 100A, 100A-1, 100A-2, 100A-3, and 100B according to various embodiments.

[0483] The integrated circuit unit 131A and the active current compensation device including the integrated circuit unit 131A according to various embodiments can be used in various power electronic products regardless of the power rating. The integrated circuit unit 131A and the active current compensation device including the integrated circuit unit 131A according to various embodiments can also be extended to high power and high-noise systems.

[0484] The one-chip integrated circuit portion 131A allows the functionality of the active current compensation device to be expanded without additional components.

[0485] The integrated circuit portion 131A according to various embodiments can be sufficiently robust against transient voltages in the high current path in which the active current compensation device is installed.

[0486] [4] An active current compensation device including a single-chip integrated circuit 23 is a diagram illustrating a schematic configuration of a system including an active current compensation apparatus 100 according to an embodiment of the present invention. The active current compensation apparatus 100 can actively compensate for first currents I11, I12 (e.g., EMI noise currents) input to a common mode (CM) from a first device 300 via a plurality of large current paths 111, 112.

[0487] Referring to FIG. 23, the active current compensation device 100 may include a sensing unit 120, an amplifying unit 130 and a compensating unit 160.

[0488] In this specification, the first device 300 may be various types of power systems that use the power source supplied by the second device 200. For example, the first device 300 may be a load that is driven by the power source supplied by the second device 200. In addition, the first device 300 may be a load (e.g., an electric vehicle) that stores energy using the power source supplied by the second device 200 and is driven by using the stored energy. However, the first device 300 is not limited thereto.

[0489] The second device 200 in this specification can be a system of various forms for supplying power in the form of current and / or voltage to the first device 300. The second device 200 can also be, but is not limited to, a device that supplies stored energy.

[0490] A power converter may be located on the first device 300 side. For example, the first currents I11 and I12 may be input to the current compensation device 100 by a switching operation of the power converter. That is, the first device 300 side may correspond to a noise source, and the second device 200 side may correspond to a noise receiver.

[0491] The two or more high current paths 111, 112 may be paths that transmit the power source supplied by the second device 200, i.e., the second currents I21, I22, to the first device 300, and may be, for example, power lines. For example, each of the two or more high current paths 111, 112 may be a live line and a neutral line. At least a part of the high current paths 111, 112 may pass through the current compensation device 100. The second currents I21, I22 may be AC ​​currents having a frequency in a second frequency band. The second frequency band may be, for example, a 50 Hz to 60 Hz band.

[0492] In addition, the two or more high current paths 111, 112 may be paths through which noise generated in the first device 300, i.e., the first currents I11, I12, are transmitted to the second device 200. The first currents I11, I12 may be input in a common mode to each of the two or more high current paths 111, 112. The first currents I11, I12 may be currents unintentionally generated in the first device 300 due to various causes. For example, the first currents I11, I12 may be noise currents generated by a virtual capacitance between the first device 300 and the surrounding environment. Alternatively, the first currents I11, I12 may be noise currents generated by a switching operation of a power conversion device of the first device 300. The first currents I11, I12 may be currents having a frequency in a first frequency band. The first frequency band may be a frequency band higher than the above-mentioned second frequency band. The first frequency band may be, for example, a 150 KHz to 30 MHz band.

[0493] Meanwhile, the two or more high current paths 111, 112 may include two paths as shown in Fig. 23, or may include three paths as shown in Fig. 28. Furthermore, the two or more high current paths 111, 112 may include four paths. The number of the high current paths 111, 112 may vary depending on the type and / or form of the power source used by the first device 300 and / or the second device 200.

[0494] The sensing unit 120 may detect the first currents I11 and I12 on the two or more high current paths 111 and 112 and generate output signals corresponding to the first currents I11 and I12. That is, the sensing unit 120 may mean a means for detecting the first currents I11 and I12 on the high current paths 111 and 112. At least a part of the high current paths 111 and 112 may pass through the sensing unit 120 to sense the first currents I11 and I12, but a part of the sensing unit 120 where an output signal is generated by sensing may be insulated from the high current paths 111 and 112. For example, the sensing unit 120 may be embodied as a sensing transformer. The sensing transformer may detect the first currents I11 and I12 on the high current paths 111 and 112 while being insulated from the high current paths 111 and 112. However, the sensing unit 120 is not limited to a sensing transformer.

[0495] According to an embodiment, the sensing unit 120 may be differentially connected to an input terminal of the amplification unit 130 .

[0496] The amplifier 130 is electrically connected to the sensing unit 120 and may amplify an output signal output from the sensing unit 120 to generate an amplified output signal. In the present invention, "amplification" by the amplifier 130 may mean adjusting the magnitude and / or phase of an object to be amplified. The amplifier 130 may be embodied by various means and may include active elements. In one embodiment, the amplifier 130 may include a BJT (Bipolar Junction Transistor). For example, the amplifier 130 may include a plurality of passive elements such as resistors and capacitors in addition to the BJT. However, the present invention is not limited thereto, and any means for "amplification" described in the present invention may be used without limitation as the amplifier 130 of the present invention.

[0497] According to an embodiment, the second reference potential 602 of the amplifier 130 and the first reference potential 601 of the current compensation device 100 can be distinguished from each other. For example, when the amplifier 130 is insulated from the large current paths 111 and 112, the second reference potential 602 of the amplifier 130 and the first reference potential 601 of the current compensation device 100 can be distinguished from each other.

[0498] However, the present invention is not limited to this. For example, when the amplifier 130 is not insulated from the large current paths 111 and 112, the reference potential of the amplifier and the reference potential of the current compensation device may not be distinguished.

[0499] The amplifier unit 130 according to various embodiments of the present invention may include a one-chip integrated circuit 131 and a non-integrated circuit unit 132. The one-chip integrated circuit 131 may include essential components of the active current compensation device 100. The essential components may include active elements. That is, the active elements included in the amplifier unit 130 may be integrated into the one-chip integrated circuit 131. The non-integrated circuit unit 132 of the amplifier unit 130 may not include active elements. The integrated circuit 131 may include not only active elements but also passive elements.

[0500] The integrated circuit 131 according to an embodiment of the present invention may be physically one IC chip. The integrated circuit 131 according to an embodiment of the present invention may be applied to active current compensation devices 100 of various designs. The one-chip integrated circuit 131 according to an embodiment of the present invention may be applied to current compensation devices 100 of various designs with versatility as an independent module.

[0501] The non-integrated circuit portion 132 according to the embodiment of the present invention may vary depending on the design of the active current compensation device 100 .

[0502] The one-chip integrated circuit 131 may include terminals b1, b2, e1, and e2 for connection to the non-integrated circuit unit 132. The integrated circuit 131 and the non-integrated circuit unit 132 may be coupled to each other to function as the amplifier unit 130. The combination of the integrated circuit 131 and the non-integrated circuit unit 132 may perform a function of generating an amplified signal from an output signal output from the sensing unit 120. The amplified signal may be input to the compensation unit 160.

[0503] An example of a detailed configuration of the amplifier section 130 including the integrated circuit 131 and the non-integrated circuit section 132 will be described later with reference to FIGS.

[0504] The amplifier 130 may be supplied with power from a power supply device 400 that is distinct from the first device 300 and / or the second device 200. The amplifier 130 may receive power from the power supply device 400 and amplify an output signal output from the sensing unit 120 to generate an amplified current.

[0505] The power supply device 400 may be a device that receives power from a power source independent of the first device 300 and the second device 200 and generates input power for the amplifier unit 130. Alternatively, the power supply device 400 may be a device that receives power from one of the first device 300 and the second device 200 and generates input power for the amplifier unit 130.

[0506] The one-chip integrated circuit (one-chip IC) 131 may include a terminal c1 for connection to the power supply 400, a terminal c2 for connection to the second reference potential 602, and terminals b1, b2, e1, and e2 for connection to the non-integrated circuit unit 132. In other embodiments, the one-chip integrated circuit 131 may further include terminals for other functions.

[0507] The power supply device 400 can supply a direct current (DC) voltage Vdc referenced to a second reference potential 602 to drive the amplifier section 130. A decoupling capacitor Cdc to Vdc can be connected in parallel to the power supply device 400. The capacitor Cdc is connected outside the integrated circuit 131, but can be connected between the power supply terminal c1 and a terminal c2 corresponding to the second reference potential.

[0508] The remaining components of the amplifier section 130, excluding the integrated circuit 131, can be included in the non-integrated circuit section 132. Therefore, it can also be said that the capacitor Cdc is included in the non-integrated circuit section 132.

[0509] The compensation unit 160 may generate compensation currents IC1 and IC2 based on the output signal amplified by the amplifier 130. The output side of the compensation unit 160 may be connected to the large current paths 111 and 112 to flow the compensation currents IC1 and IC2 through the large current paths 111 and 112.

[0510] According to an embodiment, an output side of the compensation unit 160 may be insulated from the amplifier unit 130. For example, the compensation unit 160 may include a compensation transformer for the isolation. For example, an output signal of the amplifier unit 130 may flow through a primary side of the compensation transformer, and a compensation current based on the output signal may be generated on a secondary side of the compensation transformer.

[0511] However, the present invention is not limited to this. According to another embodiment, the output side of the compensation unit 160 may be insulated from the amplifier unit 130. In this case, the amplifier unit 130 may not be insulated from the large current paths 111 and 112.

[0512] In order to cancel out the first currents I11 and I12, the compensating unit 160 may inject compensation currents IC1 and IC2 into the large current paths 111 and 112 through the two or more large current paths 111 and 112, respectively. The compensation currents IC1 and IC2 may have the same magnitude and opposite phase as the first currents I11 and I12.

[0513] Fig. 24 shows a more specific example of the embodiment shown in Fig. 23, and is a diagram illustrating an active current compensation apparatus 100A according to one embodiment of the present invention. The active current compensation apparatus 100A can actively compensate for first currents I11, I12 (e.g., noise currents) input in common mode to two large current paths 111, 112 connected to the first device 300, respectively.

[0514] Referring to FIG. 24, an active current compensation apparatus 100A may include a sensing transformer 120A, an amplifier unit 130, and a compensation unit 160A.

[0515] In an embodiment, the sensing unit 120 may include a sensing transformer 120A. In this case, the sensing transformer 120A may be a means for detecting the first currents I11 and I12 on the large current paths 111 and 112 while being insulated from the large current paths 111 and 112. The sensing transformer 120A may sense the first currents I11 and I12, which are noise currents input from the first device 300 side to the large current paths 111 and 112 (e.g., power lines).

[0516] The sensing transformer 120A may include a primary side 121A disposed on the large current paths 111 and 112 and a secondary side 122A differentially connected to an input terminal of the amplifier unit 130. The sensing transformer 120A may generate an induced current in a secondary side 122A (e.g., a secondary winding) based on a magnetic flux density induced by a first current I11 and I12 in the primary side 121A (e.g., a primary winding) disposed on the large current paths 111 and 112. The primary side 121A of the sensing transformer 120A may be, for example, a winding in which the first large current path 111 and the second large current path 112 are wound around one core. However, the primary side 121A of the sensing transformer 120A may be a type in which the first large current path 111 and the second large current path 112 pass through the core.

[0517] Specifically, the magnetic flux density induced by the first current I11 on the first large current path 111 (e.g., live line) and the magnetic flux density induced by the first current I12 on the second large current path 112 (e.g., neutral line) can be configured to overlap (or reinforce) each other. At this time, the second currents I21 and I22 also flow through the large current paths 111 and 112, but the magnetic flux density induced by the second current I21 on the first large current path 111 and the magnetic flux density induced by the first current I22 on the second large current path 112 can be configured to cancel each other out. Also, as an example, the sensing transformer 120A can be configured so that the magnitude of the magnetic flux density induced by the first currents I11, I12 in a first frequency band (e.g., a band having a range of 150 KHz to 30 MHz) is greater than the magnitude of the magnetic flux density induced by the second currents I21, I22 in a second frequency band (e.g., a band having a range of 50 Hz to 60 Hz).

[0518] In this manner, the sensing transformer 120A is configured to cancel out the magnetic flux densities induced by the second currents I21 and I22, so that only the first currents I11 and I12 are detected. That is, the current induced in the secondary side 122A of the sensing transformer 120A may be a current obtained by converting the first currents I11 and I12 at a constant rate.

[0519] For example, in the sensing transformer 120A, if the winding ratio of the primary side 121A to the secondary side 122A is 1:Nsen and the self-inductance of the primary side 121A of the sensing transformer 120A is Lsen, the secondary side 122A may have a self-inductance of Nsen2·Lsen. At this time, the current induced in the secondary side 122A is 1 / Nsen times the first current I11, I12. In one example, the primary side 121A and the secondary side 122A of the sensing transformer 120A may be coupled with a coupling coefficient of ksen.

[0520] The secondary side 122A of the sensing transformer 120A may be connected to an input terminal of the amplifier unit 130. For example, the secondary side 122A of the sensing transformer 120A may be differentially connected to the input terminal of the amplifier unit 130 to provide an induced current or an induced voltage to the amplifier unit 130.

[0521] The amplifier 130 may amplify the current sensed by the sensing transformer 120A and induced in the secondary side 122A. For example, the amplifier 130 may amplify the magnitude of the induced current at a certain rate and / or adjust the phase.

[0522] According to various embodiments of the present invention, the amplifier unit 130 may include a one-chip integrated circuit (one-chip IC) 131 and a non-integrated circuit unit 132 that is configured other than the one-chip IC.

[0523] The integrated circuit 131 may include an active element. The integrated circuit 131 may be connected to a power supply device 400 referenced to a second reference potential 602 to drive the active element. The second reference potential 602 may be distinguished from the first reference potential 601 of the current compensation device 100A (or the compensation unit 160A).

[0524] The one-chip integrated circuit 131 may be formed with a terminal c1 for connection to the power supply unit 400, a terminal c2 for connection to a second reference potential 602, and terminals b1, b2, e1, and e2 for connection to the non-integrated circuit portion 132.

[0525] The compensating unit 160A may be an example of the above-mentioned compensating unit 160. In one embodiment, the compensating unit 160A may include a compensating transformer 140A and a compensating capacitor unit 150A. The amplified current amplified by the above-mentioned amplifying unit 130 may flow to the primary side 141A of the compensating transformer 140A.

[0526] The compensation transformer 140A according to one embodiment may be a means for isolating the amplifier unit 130 including the active elements from the high current paths 111, 112. That is, the compensation transformer 140A may be a means for generating (on the secondary side 142A) a compensation current to be injected into the high current paths 111, 112 based on the amplified current while being insulated from the high current paths 111, 112.

[0527] The compensation transformer 140A may include a primary side 141A differentially connected to the output terminal of the amplifier 130, and a secondary side 142A connected to the large current paths 111 and 112. The compensation transformer 140A may induce a compensation current in the secondary side 142A (e.g., a secondary winding) based on a magnetic flux density induced by an amplified current flowing in the primary side 141A (e.g., a primary winding).

[0528] At this time, the secondary side 142A may be disposed on a path connecting the compensation capacitor unit 150A described below and a first reference potential 601 of the current compensation apparatus 100A. That is, one end of the secondary side 142A may be connected to the large current paths 111 and 112 via the compensation capacitor unit 150A, and the other end of the secondary side 142A may be connected to the first reference potential 601 of the active current compensation apparatus 100A. Meanwhile, the primary side 141A of the compensation transformer 140A, the amplifier unit 130, and the secondary side 122A of the sensing transformer 120A may be connected to a second reference potential 602 that is distinguished from the remaining components of the active current compensation apparatus 100A. The first reference potential 601 of the current compensation apparatus 100A according to an embodiment may be distinguished from the second reference potential 602 of the amplifier unit 130.

[0529] As described above, the current compensation apparatus 100A according to an embodiment uses a reference potential (i.e., second reference potential 602) for the components generating the compensation current that is different from the remaining components, and uses a separate power supply device 400, so that the components generating the compensation current can be operated in an isolated state, thereby improving the reliability of the active current compensation apparatus 100A. However, the active current compensation apparatus including the integrated circuit 131 and the non-integrated circuit part 132 according to the present invention is not limited to such an isolated structure. The active current compensation apparatus according to other embodiments of the present invention may also be non-isolated from the large current path.

[0530] In the compensation transformer 140A according to an embodiment, if the winding ratio of the primary side 141A to the secondary side 142A is 1:Ninj and the self-inductance of the primary side 141A of the compensation transformer 140A is Linj, the secondary side 142A may have a self-inductance of Ninj2.Linj. At this time, the current induced in the secondary side 142A is 1 / Ninj times the current (i.e., the amplified current) flowing in the primary side 141A. In one example, the primary side 141A and the secondary side 142A of the compensation transformer 140A may be coupled with a coupling coefficient of kinj.

[0531] The current converted through the compensation transformer 140A may be injected as compensation currents IC1, IC2 into the large current paths 111, 112 (e.g., power lines) through the compensation capacitor unit 150A. Therefore, the compensation currents IC1, IC2 may have the same magnitude and opposite phase as the first currents I11, I12 to cancel the first currents I11, I12. Therefore, the magnitude of the current gain of the amplifier unit 130 may be designed to be Nsen.Ninj. However, since magnetic coupling loss may occur in an actual situation, the target current gain of the amplifier unit 130 may be designed to be higher than Nsen.Ninj.

[0532] The compensation capacitor unit 150A can provide a path through which the current generated by the compensation transformer 140A flows to each of the two large current paths 111 and 112, as described above.

[0533] The compensation capacitor unit 150A may include a Y-capacitor (Y-cap) having one end connected to the secondary side 142A of the compensation transformer 140A and the other end connected to each of the large current paths 111 and 112. For example, one end of the two Y-caps may share a node connected to the secondary side 142A of the compensation transformer 140A, and the opposite ends of each of the two Y-caps may have a node connected to the first large current path 111 and the second large current path 112, respectively.

[0534] The compensation capacitor unit 150A can cause the compensation currents IC1 and IC2 induced by the compensation transformer 140A to flow through the power line. The compensation currents IC1 and IC2 compensate (or cancel) the first currents I11 and I12, so that the current compensation device 100A can reduce noise.

[0535] On the other hand, the compensation capacitor section 150A can be configured so that the current IL1 flowing between the two large current paths 111, 112 via the compensation capacitor is less than a first threshold value. Also, the compensation capacitor section 150A can be configured so that the current IL2 flowing between each of the two large current paths 111, 112 and the first reference potential 601 via the compensation capacitor is less than a second threshold value.

[0536] The active current compensation device 100A according to one embodiment can achieve an isolated structure by using a compensation transformer 140A and a sensing transformer 120A.

[0537] Fig. 25 shows a more specific example of the embodiment shown in Fig. 24, and is a diagram illustrating roughly an active current compensation apparatus 100A-1 according to one embodiment of the present invention. The active current compensation apparatus 100A-1, the amplifier unit 130A, and the integrated circuit 131A shown in Fig. 25 are examples of the active current compensation apparatus 100A, the amplifier unit 130, and the integrated circuit 131 shown in Fig. 24.

[0538] The active current compensation apparatus 100A-1 according to an embodiment may include a sensing transformer 120A, an amplifier unit 130A, a compensation transformer 140A, and a compensation capacitor unit 150A. In an embodiment, the active current compensation apparatus 100A-1 may further include a decoupling capacitor unit 170A on the output side (i.e., the second device 200 side). In other embodiments, the decoupling capacitor unit 170A may be omitted. Descriptions of the sensing transformer 120A, the compensation transformer 140A, and the compensation capacitor unit 150A will be omitted to avoid duplication.

[0539] In one embodiment, an induced current induced in the secondary side 122A by the sensing transformer 120A may be differentially input to the amplifier unit 130A.

[0540] The amplifier unit 130A of the active current compensation device 100A-1 according to an embodiment may include a one-chip integrated circuit unit 131A and a non-integrated circuit unit. The remaining components of the amplifier unit 130A, except for the integrated circuit 131A, may be included in the non-integrated circuit unit. In an embodiment of the present invention, the integrated circuit 131A is physically embodied in one chip. The components included in the non-integrated circuit unit may be discrete practical elements. The non-integrated circuit unit may be embodied differently depending on the embodiment. The non-integrated circuit unit may be modified so that the same one-chip integrated circuit 131A can be applied to active current compensation devices 100 of various designs.

[0541] The one-chip integrated circuit 131A may include an npn BJT 11, a pnp BJT 12, a diode 13, and one or more resistors.

[0542] In one embodiment, the one or more resistors included in the integrated circuit 131A may include Rnpn, Rpnp, and / or Re. Within the integrated circuit 131A, the resistor Rnpn may connect a collector node and a base node of the npn BJT 11. Within the integrated circuit 131A, the resistor Rpnp may connect a collector node and a base node of the pnp BJT 12. Within the integrated circuit 131A, the resistor Re may connect an emitter node of the npn BJT 11 and an emitter node of the pnp BJT 12.

[0543] To drive amplifier section 130A, power supply 400 can provide a DC voltage Vdc between the collector node of npn BJT 11 and the collector node of pnp BJT 12. The collector node of pnp BJT 12 can correspond to a second reference potential 602, and the collector node of npn BJT 11 can correspond to a supply voltage Vdc of power supply 400 referenced to second reference potential 602.

[0544] In one embodiment, biasing diode 13 may connect the base node of npn BJT 11 to the base node of pnp BJT 12 in integrated circuit 131A. That is, one end of diode 13 may be connected to the base node of npn BJT 11, and the other end of diode 13 may be connected to the base node of pnp BJT 12.

[0545] According to an embodiment of the present invention, the resistors Rnpn, Rpnp, Re and / or the bias diode 13 included in the integrated circuit unit 131A can be used for DC bias of the BJTs 11 and 12. In one embodiment of the present invention, the resistors Rnpn, Rpnp, Re and the bias diode 13 are general-purpose components in various active current compensation devices 100 and 100A, and therefore can be integrated into a one-chip integrated circuit unit 131A.

[0546] The one-chip integrated circuit (one-chip IC) 131A according to the embodiment of the present invention may include a terminal b1 corresponding to the base of the npn BJT 11, a terminal c1 corresponding to the collector of the npn BJT 11, a terminal e1 corresponding to the emitter of the npn BJT 11, a terminal b2 corresponding to the base of the pnp BJT 12, a terminal c1 corresponding to the collector of the pnp BJT 12, and a terminal e1 corresponding to the emitter of the pnp BJT 12. However, the one-chip integrated circuit 131A is not limited thereto, and may further include other terminals in addition to the terminals b1, b2, c1, c2, e1, and e2.

[0547] In various embodiments, at least one of the terminals b1, b2, c1, c2, e1, and e2 of the one-chip integrated circuit 131A can be connected to a non-integrated circuit unit. The one-chip integrated circuit 131A and the non-integrated circuit unit can be coupled to each other to function as an amplifier unit 130A according to an embodiment.

[0548] In one embodiment, the non-integrated circuitry may include capacitors Cb, Ce and Cdc, and impedances Z1 and Z2.

[0549] According to an embodiment, a capacitor Cb of a non-integrated circuit part may be connected to base terminals b1 and b2 of the integrated circuit (one-chip IC) 131A chip. A capacitor Ce of a non-integrated circuit part may be connected to emitter terminals e1 and e2 of the integrated circuit 131A chip. Outside the integrated circuit 131A, a collector terminal c2 of the pnp BJT 12 may be connected to a second reference potential 602. Outside the integrated circuit 131A, a power supply device 400 may be connected between both collector terminals c1 and c2. Outside the integrated circuit 131A, a capacitor Cdc of a non-integrated circuit part may be connected between both collector terminals c1 and c2.

[0550] Capacitors Cb and Ce, included in the non-integrated circuitry, can block DC voltages at the base and emitter nodes of BJTs 11 and 12. Capacitors Cb and Ce can selectively couple only alternating current (AC) signals.

[0551] Capacitor Cdc is a DC decoupling capacitor for voltage Vdc and can be connected in parallel with the supply voltage Vdc of power supply 400. Capacitor Cdc can selectively couple only AC signals between the collectors of npn BJT11 and pnp BJT12.

[0552] The current gain of the amplifier unit 130A can be controlled by the ratio of impedances Z1 and Z2. Z1 and Z2 can be flexibly designed according to a required target current gain depending on the winding ratio of the sensing transformer 120A and the compensation transformer 140A. Therefore, Z1 and Z2 can be embodied outside the one-chip integrated circuit 131A (i.e., in a non-integrated circuit part).

[0553] The combination of the integrated circuit 131A and the non-integrated circuit parts Cb, Ce, Cdc, Z1, and Z2 can function as an amplifier part 130A according to one embodiment. For example, the amplifier part 130A can have a push-pull amplifier structure including an npn BJT and a pnp BJT.

[0554] In one embodiment, the secondary side 122A of the sensing transformer 120A can be connected between the base side and the emitter side of the BJTs 11 and 12. In one embodiment, the primary side 141A of the compensation transformer 140A can be connected between the collector side and the base side of the BJTs 11 and 12. Here, the connection includes the case where the connection is indirectly connected.

[0555] In one embodiment, the amplifier unit 130A may have a recurrent structure that injects the output current back into the bases of the BJTs 11 and 12. Because of the recurrent structure, the amplifier unit 130A may stably obtain a constant current gain for the operation of the active current compensation device 100A-1.

[0556] For example, when the input voltage of the noise signal amplifier 130A is a positive swing greater than 0, the npn BJT 11 can operate. At this time, the operating current can flow through a first path passing through the npn BJT 11. When the input voltage of the noise signal amplifier 130A is a negative swing less than 0, the pnp BJT 12 can operate. At this time, the operating current can flow through a second path passing through the pnp BJT 12.

[0557] In the integrated circuit 131A, the resistors Rnpn, Rpnp, and Re can adjust the operating point of the BJT. The resistors Rnpn, Rpnp, and Re can be designed according to the operating point of the BJT.

[0558] According to an embodiment of the present invention, an element having a temperature characteristic may be integrated into a one-chip integrated circuit (one-chip IC) 131A. According to an embodiment, an npn BJT 11, a pnp BJT 12, a bias diode 13, Rnpn, Rpnp, and Re may be integrated into a one-chip integrated circuit 131A. When integrated into a one-chip, the size of the amplifier 130A can be minimized compared to the case where discrete elements are used. In this specification, an element having a temperature characteristic may refer to an element having any circuit characteristic in a wide temperature range, for example, from extremely low temperature to high temperature. An element having a temperature characteristic may refer to an element whose element characteristic changes according to a temperature change in a wide temperature range. According to an embodiment of the present invention, an active element having a temperature characteristic is built into the one-chip integrated circuit 131A, thereby realizing a one-chip integrated circuit 131A having constant (or stable) circuit characteristics even when the temperature changes. According to an embodiment of the present invention, an amplifier 130A and an active current compensation device 100A-1 that provide consistent performance even when temperature changes can be realized by incorporating an active element having a temperature characteristic into a one-chip integrated circuit 131A. That is, the one-chip integrated circuit 131A can be designed so that the amplifier 130A provides consistent performance even when temperature changes. Here, the amplifier 130A providing consistent performance includes maintaining stable performance within a certain range.

[0559] Furthermore, according to the embodiment of the present invention, elements having temperature characteristics (e.g., BJTs 11 and 12, diode 13, Re, etc.) can share temperature. Therefore, the characteristics according to temperature can be easily predicted, for example, through simulation. Therefore, it is possible to design an amplifier unit 130A that is controllable and predictable in response to temperature changes. On the other hand, if individual elements are used for the BJTs, diodes, and resistors, the temperature characteristics of the elements may differ from each other, making it difficult to predict the operation of the active circuit unit.

[0560] Furthermore, according to the embodiment of the present invention, even if the number of semiconductor elements increases, there is only a slight increase in the size and production cost of the integrated circuit 131A and the active current compensation device 100A. Therefore, mass production of the one-chip integrated circuit 131A and the active compensation device 100A can be facilitated.

[0561] The inductors, capacitors (eg, Cb, Ce, Cdc), Z1 and Z2 of the non-integrated circuit parts are discrete components and may be implemented on the periphery of the one-chip integrated circuit 131A.

[0562] The capacitance required for the capacitors Cb, Ce, and Cdc to couple an AC signal may be several μF or more (e.g., 10 μF). Since this capacitance value is difficult to realize within a one-chip integrated circuit, the capacitors Cb, Ce, and Cdc may be realized outside the integrated circuit 131A, i.e., in a non-integrated circuit portion.

[0563] Depending on the design of the non-integrated circuit part, the one-chip integrated circuit 131A can be used for the first device 300 (or the second device 200) of various power systems. For example, the one-chip integrated circuit 131A can be independent of the rated power of the first device 300, and the non-integrated circuit part can be designed according to the rated power of the first device 300. For example, the values ​​of the impedances Z1 and Z2 can be determined based on the turns ratio of the sensing transformer 120A and the compensation transformer 140A and the target current gain of the amplifier part 130A. The configuration of the one-chip integrated circuit 131A can be independent of the turns ratio and the target current gain.

[0564] The impedances Z1 and Z2 can be embodied outside the integrated circuit, i.e., in a non-integrated circuit part, to achieve design flexibility for various power systems or various first devices 300. Z1 and Z2 can be flexibly designed according to the winding ratios of the sensing transformer 120A and the compensation transformer 140A and according to the required target current gain. By adjusting the impedances Z1 and Z2, various current compensation devices can be designed that allow the same integrated circuit 131A to be applied to various power systems.

[0565] In particular, the size and impedance characteristics of the sensing transformer 120A must change according to the maximum rated current of the first device 300. Therefore, in order to make the ratio of the injection current to the sensing noise current uniform over a wide frequency range, appropriate design of Z1 and Z2 is required. By adjusting the winding ratio of the sensing transformer 120A and the compensation transformer 140A and the ratio of Z1 and Z2, the ratio of the injection current to the sensing noise current can be designed to be 1 over a wide frequency range. For this purpose, the impedances Z1 and Z2 can be implemented outside the integrated circuit 131A for design flexibility. In one embodiment, Z1 can be a series connection of a resistor R1 and a capacitor C1, and Z2 can be a series connection of a resistor R2 and a capacitor C2. Since C1 and C2 are further implemented in series next to R1 and R2, respectively, the ratio of the injection current to the sensing noise current in the low frequency range can have better performance.

[0566] The integrated circuit 131A according to various embodiments of the present invention is designed for scalability so that it can be used in various types of active current compensation devices. The same type of integrated circuit 131A can be used in various embodiments, and the non-integrated circuit parts can be designed differently depending on the embodiment.

[0567] Meanwhile, the active current compensation apparatus 100A-1 may further include a decoupling capacitor unit 170A on the output side (i.e., the second device 200 side). One end of each capacitor included in the decoupling capacitor unit 170A may be connected to the first large current path 111 and the second large current path 112, respectively. The opposite end of each capacitor may be connected to a first reference potential 601 of the current compensation apparatus 100A-1.

[0568] The decoupling capacitor section 170A can prevent the output performance of the compensation current of the active current compensation device 100A-1 from fluctuating significantly due to changes in the impedance value of the second device 200. The impedance ZY of the decoupling capacitor section 170A can be designed to have a value smaller than a value designated in the first frequency band targeted for noise reduction. By coupling the decoupling capacitor section 170A, the current compensation device 100A-1 can be used as an independent module in any system.

[0569] According to one embodiment, the decoupling capacitor section 170A may be omitted in the active current compensation device 100A-1.

[0570] 26 is a diagram illustrating a one-chip integrated circuit (one-chip IC) 131A according to an embodiment of the present invention. A detailed description of the integrated circuit 131A will be omitted since it overlaps with the above description.

[0571] The DC bias circuit of the BJT must be designed to have a constant DC operating point even when the temperature changes, if possible. According to an embodiment of the present invention, the DC bias circuit of the BJTs 11 and 12 can be designed to have a stable DC operating point within a certain range even when the temperature changes.

[0572] 26, the bias diode 13, resistors Rnpn, Rpnp, and Re can be used for DC bias design. For BJT bias, the forward voltage of the bias diode 13 may need to be twice the base-emitter voltage of the BJT or slightly higher. In the embodiment of the present invention, the bias diode 13 and resistor Re can prevent thermal runaway of the BJTs 11 and 12.

[0573] Generally, when heat is generated as current flows through a BJT, the current gain of the BJT increases, which generates more heat. Thermal runaway refers to the phenomenon in which this positive feedback causes the heat to continue to increase and damage the BJT.

[0574] According to an embodiment of the present invention, by providing a resistor Re between the emitter node of the npn BJT 11 and the emitter node of the pnp BJT 12, the DC bias current can be adjusted and thermal runaway can be prevented. As the temperature increases, the resistance of Re also increases, so that the current Ie can be prevented from increasing. Therefore, the resistor Re can act as a negative feedback to the current Ie or heat.

[0575] According to an embodiment of the present invention, a diode 13 is provided between the base node of the npn BJT 11 and the base node of the pnp BJT 12, thereby preventing thermal runaway. The diode 13 has a characteristic that the forward voltage decreases as the temperature increases compared to the forward current. Therefore, in an embodiment of the present invention, the diode 13 formed between the base ends of the BJTs 11 and 12 can play a role of decreasing the voltage between the base ends as the temperature increases. As a result, the frequency with which the BJTs 11 and 12 are turned on can be relatively low when the diode 13 is present compared to when there is no diode 13. Therefore, the current Ie due to an increase in temperature can be relatively reduced. In this way, the diode 13 can act as a negative feedback for the current Ie.

[0576] As described above, the positive feedback due to temperature and the negative feedback due to Re and the diode 13 act together on the BJTs 11 and 12, so that the BJTs 11 and 12 can maintain a constant current range even when the temperature changes.

[0577] When the DC bias voltages in the npn BJT 11 and the pnp BJT 12 are sufficiently balanced, the DC emitter current Ie can be calculated as in Equation 1 below.

[0578]

number

[0579] In Equation 1, Vdc is the voltage supplied between the collector of npn BJT 11 and the collector of pnp BJT 12, Id is the forward bias current of diode 13, Vbe is the base-emitter voltage of the BJT, hfe is the current gain of the BJT, and in one embodiment, Rbias = Rnpn = Rpnp.

[0580] In one embodiment, the values ​​of Id and Vbe can be designed according to the IV (current-voltage) characteristics of the diode 13 and the BJTs 11, 12 in the customized integrated circuit 131A.

[0581] Fig. 27 is a diagram showing simulation results of bias voltage and current depending on temperature of the one-chip integrated circuit 131A shown in Fig. 26. The graph shown in Fig. 27 shows the DC simulation results of the integrated circuit 131A depending on temperature changes from -50°C to 125°C.

[0582] Ie is the DC emitter current, Vbn is the voltage at the base node of npn BJT11 relative to the second reference potential 602 (i.e., the DC ground reference), Ven is the voltage at the emitter node of npn BJT11 relative to the second reference potential 602, Vbp is the voltage at the base node of pnp BJT12 relative to the second reference potential 602, and Vep is the voltage at the emitter node of pnp BJT12 relative to the second reference potential 602.

[0583] 27, it can be seen that the Vbe (=Vbn-Ven) of the npn BJT 11 and the Vbe (=Vep-Vbp) of the pnp BJT 12 are maintained at about 0.75V over the entire temperature range. Furthermore, the DC bias voltage is well balanced at about 6V, which is half of Vdc. That is, the voltages of each node (Vbn, Ven, Vbp, and Vep) can be uniformly distributed according to temperature. The more uniformly the voltages of each node are distributed according to temperature changes, the more beneficial the performance of the active current compensation device 100A-1 can be.

[0584] According to one embodiment, it can be seen that the current Ie remains constant at a level in the range of about 40-50 mA even as the temperature increases up to 125° C. During the temperature increase, the current Ie does not increase beyond a certain range, but rather decreases slightly above 40° C. In other words, it can be seen that thermal runaway does not occur because the current Ie does not increase continuously as the temperature increases.

[0585] As a result, because the bias resistor Re and the diode 13 are built into the one-chip integrated circuit (one-chip IC) 131A, thermal runaway can be prevented without using additional discrete components.

[0586] Meanwhile, when elements having temperature characteristics (e.g., BJTs 11 and 12, diode 13, Re, etc.) are discrete elements, there is a limit to the elements' ability to share temperature. In this case, the temperature characteristics of the resistor, diode 13, and BJTs 11 and 12 may differ from each other. Therefore, it may be difficult to predict and control the bias voltage and current according to the actual temperature. In addition, when the amplifier section is configured using commercially available discrete elements, it may be difficult to freely design the IV (current-voltage) characteristics, making it difficult to optimally design an active current compensation device. In addition, when discrete elements are used, production costs may continually increase depending on the number of semiconductor elements.

[0587] In an embodiment of the present invention, the amplifier of the active current compensation device includes a one-chip integrated circuit 131A, so that the emitter current Ie and voltage can be adjusted as desired in consideration of the characteristics of the semiconductor elements. In an embodiment of the present invention, elements having temperature characteristics are formed in a one-chip integrated circuit (one-chip IC) and share the temperature, so that the characteristics of the elements according to temperature can be easily predicted. In the case of the integrated circuit 131A according to the embodiment of the present invention, the increase in size due to an increase in the number of semiconductor elements is small, and the increase in cost due to mass production can also be small.

[0588] 28 is a schematic diagram showing the configuration of an active current compensation device 100A-2 according to another embodiment of the present invention. In the following, a description of the contents that overlap with the contents described with reference to FIGS. 24 to 27 will be omitted.

[0589] 28, the active current compensation device 100A-2 can actively compensate for first currents I11, I12, and I13 input in common mode to large current paths 111, 112, and 113 connected to a first device 300, respectively.

[0590] To this end, the active current compensation device 100A-2 may include three large current paths 111, 112, and 113, a sensing transformer 120A-2, an amplifier section 130A, a compensation transformer 140A, and a compensation capacitor section 150A-2.

[0591] Compared with the active current compensation apparatuses 100A and 100A-1 according to the above-described embodiments, the active current compensation apparatus 100A-2 according to the embodiment shown in Fig. 28 includes three large current paths 111, 112, and 113, and therefore has differences in the sensing transformer 120A-2 and the compensation capacitor unit 150A-2. Therefore, the following description of the active current compensation apparatus 100A-2 will focus on the above-mentioned differences.

[0592] The active current compensation device 100A-2 may include a first large current path 111, a second large current path 112, and a third large current path 113, which are distinct from one another. According to an embodiment, the first large current path 111 may be an R-phase power line, the second large current path 112 may be an S-phase power line, and the third large current path 113B may be a T-phase power line. The first currents I11, I12, and I13 may be input in common mode to the first large current path 111, the second large current path 112, and the third large current path 113, respectively.

[0593] The primary side 121A-2 of the sensing transformer 120A-2 is disposed on the first, second, and third large current paths 111, 112, and 113, respectively, and can generate an induced current on the secondary side 122A-2. The magnetic flux densities generated in the sensing transformer 120A-2 by the first currents I11, I12, and I13 on the three large current paths 111, 112, and 113 can reinforce each other.

[0594] In the active current compensation device 100A-2 according to the embodiment shown in FIG. 28, the amplifier section 130A can correspond to the amplifier section 130A described above.

[0595] The compensation capacitor unit 150A-2 can provide paths through which the compensation currents IC1, IC2, and IC3 generated by the compensation transformer 140A flow to the first, second, and third large current paths 111, 112, and 113, respectively.

[0596] The active current compensation apparatus 100A-2 may further include a decoupling capacitor unit 170A-2 on the output side (i.e., the second device 200 side). One end of each capacitor included in the decoupling capacitor unit 170A-2 may be connected to the first large current path 111, the second large current path 112, and the third large current path 113, respectively. The opposite end of each capacitor may be connected to a first reference potential 601 of the current compensation apparatus 100A-2.

[0597] The decoupling capacitor section 170A-2 can prevent the output performance of the compensation current of the active current compensation device 100A-2 from fluctuating significantly due to changes in the impedance value of the second device 200. The impedance ZY of the decoupling capacitor section 170A-2 can be designed to have a value smaller than a value designated in the first frequency band targeted for noise reduction. By coupling the decoupling capacitor section 170A-2, the current compensation device 100A-2 can be used as an independent module in any system (e.g., three-phase three-wire system).

[0598] According to one embodiment, the decoupling capacitor section 170A-2 may be omitted in the active current compensation device 100A-2.

[0599] The active current compensation device 100A-2 according to such an embodiment can be used to compensate (or cancel) the first currents I11, I12, I13 transferred to a power source at a load in a three-phase, three-wire power system.

[0600] It goes without saying that the active current compensation devices according to the various embodiments of the present invention can be modified so as to be applicable to a three-phase four-wire system according to the technical concept of the present invention.

[0601] The amplifier 130A according to one embodiment of the present invention can be applied to a single-phase (two-wire) system shown in Fig. 25, a three-phase three-wire system shown in Fig. 28, and a three-phase four-wire system (not shown). Since the one-chip integrated circuit 131A can be applied to a plurality of systems, the integrated circuit 131A can have versatility in active current compensation devices according to various embodiments.

[0602] The specific implementation described in the present invention is one embodiment and does not limit the scope of the present invention in any way. For the sake of brevity of the present specification, descriptions of conventional electronic configurations, control systems, software, and other functional aspects of the system may be omitted. Furthermore, the line connections or connecting members between components shown in the drawings are illustrative of functional connections and / or physical or circuit connections, and may be shown as various alternative or additional functional connections, physical connections, or circuit connections in an actual device.

[0603] The concept of the present invention should not be limited to the above-described embodiments, and all scopes equivalent to or modified equivalently to the scope of the claims described below are within the scope of the concept of the present invention.

Claims

1. An active current compensation device that actively compensates for noise generated in a common mode in at least two or more large current paths, a sensing unit that generates an output signal corresponding to a common mode noise current on the large current path; an amplifier section that amplifies the output signal to generate an amplified current; a compensation unit that generates a compensation current based on the amplified current and causes the compensation current to flow through each of the at least two large current paths, the amplifier unit includes a non-integrated circuit unit and a one-chip integrated circuit; The one-chip integrated circuit has an active element built in, the element characteristics of which change in response to temperature changes, The one-chip integrated circuit is designed so that the amplifier section maintains performance within a certain range even when the temperature changes. Active current compensator.

2. The one-chip integrated circuit includes an npn BJT and a pnp BJT. A diode is connected between the base node of the npn BJT and the base node of the pnp BJT.

2. The active current compensation device of claim 1.

3. A resistor is connected between the emitter node of the npn BJT and the emitter node of the pnp BJT.

3. An active current compensation device as claimed in claim 2.

4. The diode serves to reduce the emitter current flowing through the resistor.

4. An active current compensation device according to claim 3.

5. The diode and the resistor adjust the DC bias current of the npn BJT and the pnp BJT.

4. An active current compensation device according to claim 3.

6. The emitter current through the resistor remains within a predetermined range as temperature changes.

4. An active current compensation device according to claim 3.

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