Semiconductor device

Abstract

To provide a semiconductor device that can operate stably.SOLUTION: A semiconductor device of the embodiment has a substrate and a body part with a chip mounted on the device surface facing one side in the first direction among the outer surfaces of the substrate. It has a housing that houses the body part. It has heat transfer pins. The housing has a lid member facing the device surface. The heat transfer pins are held in the lid member and extends from the lid member toward the chip.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] In a semiconductor device, the amount of heat generated by a chip mounted on a substrate is likely to be large. In addition, when electrodes to be connected to wires are provided on the surface of the chip, or when the chip is covered with a resin material to ensure insulation of the chip, it is difficult to dissipate heat from the surface side of the chip, so there is a risk that the temperature of the chip will become too high. If the temperature of the chip becomes too high, there is a risk that the operation of the semiconductor device will become unstable. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-125477 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a semiconductor device that can operate stably. [Means for solving the problem]

[0005] A semiconductor device according to an embodiment has a main body having a substrate and a chip mounted on a device surface of an outer surface of the substrate that faces one side in a first direction. The semiconductor device has a housing that accommodates the main body. The semiconductor device has a heat transfer pin. The housing has a lid member that faces the device surface. The heat transfer pin is held by the lid member and extends from the lid member toward the chip. [Brief description of the drawings]

[0006] [Figure 1] 1 is a schematic cross-sectional view showing a semiconductor device according to a first embodiment. [Diagram 2]FIG. 2 is a partially enlarged schematic cross-sectional view showing a part of the semiconductor device according to the first embodiment. [Diagram 3] FIG. 2 is a schematic diagram showing the chip of the first embodiment as viewed from above. [Figure 4] FIG. 4 is a schematic cross-sectional view showing a semiconductor device according to a second embodiment. [Diagram 5] FIG. 11 is a schematic cross-sectional view showing a semiconductor device according to a third embodiment. [Figure 6] FIG. 13 is a schematic cross-sectional view showing a semiconductor device according to a fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, a method for manufacturing a semiconductor device according to an embodiment will be described with reference to the drawings.

[0008] The first direction D1 shown in each drawing is the direction in which the device surface on which the chip is mounted faces among the outer surfaces of the substrate. In the following description, the side toward which the arrow of the first direction D1 faces (+D1 side) is referred to as "one side of the first direction D1" or "upper side", and the opposite side to the side toward which the arrow of the first direction D1 faces (-D1 side) is referred to as "the other side of the first direction D1" or "lower side". Note that "upper side" and "lower side" are not terms that indicate a relationship with the direction of gravity. In the following description, the surface facing upward among the outer surfaces of each member and each layer that constitutes the semiconductor device is referred to as the front surface, and the surface facing downward is referred to as the back surface.

[0009] A second direction D2 shown in each drawing is a direction perpendicular to the first direction D1. A third direction D3 shown in each drawing is a direction perpendicular to both the first direction D1 and the second direction D2.

[0010] (First embodiment) 1 is a schematic cross-sectional view of a semiconductor device 10 according to the present embodiment. The semiconductor device 10 according to the present embodiment is, for example, a semiconductor device such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor). The semiconductor device 10 includes a housing 20, a heat sink 31, a main body 32, and a heat transfer pin 50. As shown in FIG. 2, the semiconductor device 10 includes an elastic member 29.

[0011] 1, the housing 20 accommodates the main body portion 32 and the heat transfer pins 50 therein. The housing 20 has a peripheral wall portion 21 and a cover member 22.

[0012] The peripheral wall portion 21 surrounds the main body portion 32 and the heat transfer pins 50. The peripheral wall portion 21 is tubular and extends in the first direction D1. In this embodiment, the peripheral wall portion 21 is tubular. The peripheral wall portion 21 may be tubular or may be hexagonal or may be other shapes. The peripheral wall portion 21 has a first opening 21a that opens to the upper side and a second opening 21b that opens to the lower side. In this embodiment, the peripheral wall portion 21 is made of resin. The peripheral wall portion 21 may be made of metal.

[0013] The lid member 22 has a plate shape that extends in a direction perpendicular to the first direction D1. In this embodiment, the lid member 22 has a substantially rectangular shape when viewed from the first direction D1. The lid member 22 is fixed to the upper end of the peripheral wall portion 21. The lid member 22 closes the first opening 21a. The lid member 22 is disposed above the main body portion 32. The lid member 22 has a lid main body portion 23 and a heat dissipation portion 25.

[0014] The lid body 23 is in the form of a plate extending in a direction perpendicular to the first direction D1. In this embodiment, the lid body 23 is made of resin. The lid body 23 is provided with a plurality of lid holes 23a. Each lid hole 23a is a hole penetrating the lid body 23 in the first direction D1. Although not shown, each lid hole 23a has a substantially rectangular shape when viewed from the first direction D1.

[0015] The heat dissipation portion 25 is a generally rectangular prism-shaped portion protruding in the first direction D1. In this embodiment, the lid member 22 has a plurality of heat dissipation portions 25. Each heat dissipation portion 25 is disposed inside a different lid hole portion 23a. Each heat dissipation portion 25 is held on the inner surface of the lid hole portion 23a. In this embodiment, the thermal conductivity of the heat dissipation portion 25 is greater than the thermal conductivity of the lid main body portion 23. The surface of the heat dissipation portion 25 is exposed to the outside of the lid main body portion 23. That is, a portion of the heat dissipation portion 25 is exposed to the outside of the lid main body portion 23. The heat dissipation portion 25 has a first heat dissipation portion 25a, an insulating portion 25f, a second heat dissipation portion 26, and a plurality of holding members 28.

[0016] The first heat dissipation section 25a is in the form of a plate extending in a direction perpendicular to the first direction D1. When viewed from the first direction D1, the first heat dissipation section 25a is in a substantially rectangular shape. A surface 25b of the first heat dissipation section 25a is exposed to the outside of the lid main body section 23. As a result, a part of the heat dissipation section 25 is exposed to the outside of the lid main body section 23. The first heat dissipation section 25a is made of a metal such as copper, aluminum, nickel, silver, or gold. In this embodiment, the first heat dissipation section 25a is made of copper. The thermal conductivity of the first heat dissipation section 25a is greater than the thermal conductivity of the lid main body section 23.

[0017] The insulating portion 25f insulates the first heat dissipation portion 25a from the second heat dissipation portion 26. The insulating portion 25f has a substantially rectangular prism shape protruding in the first direction D1. The insulating portion 25f is disposed below the first heat dissipation portion 25a. The insulating portion 25f is fixed to the back surface 25c of the first heat dissipation portion 25a. The insulating portion 25f is provided with a recess 25i recessed upward from the back surface 25h of the insulating portion. The insulating portion 25f is made of ceramics such as silicon nitride (Si3N4) and aluminum nitride (AlN). In this embodiment, the insulating portion 25f is made of silicon nitride. The thermal conductivity of the insulating portion 25f is greater than the thermal conductivity of the lid main body portion 23.

[0018] The second heat dissipation section 26 is a substantially rectangular prism protruding in the first direction D1. The second heat dissipation section 26 is disposed inside the recess 25i. The second heat dissipation section 26 is fixed to the inner side surface of the recess 25i. The second heat dissipation section 26 is made of a metal such as copper, aluminum, nickel, silver, and gold. In this embodiment, the second heat dissipation section 26 is made of copper. The thermal conductivity of the second heat dissipation section 26 is greater than the thermal conductivity of the lid main body section 23. In addition, when the recess 25i is not provided in the insulating section 25f, the second heat dissipation section 26 may be fixed to the back surface 25h of the insulating section 25f. In this case, the lid member 22 may be molded by insert molding using the heat dissipation section 25 as an insert member. In this case, the second heat dissipation section 26 is held by the lid main body section 23. As shown in FIG. 2, the second heat dissipation section 26 holds a plurality of holding members 28. The second heat dissipation portion 26 has a housing member 26a and a support member 26e.

[0019] The accommodating member 26a is a substantially rectangular prism protruding in the first direction D1. The accommodating member 26a is provided with a plurality of accommodating holes 26c recessed upward from the back surface 26b of the accommodating member 26a. When viewed from the first direction D1, each of the accommodating holes 26c is circular. A part of one holding member 28 and one elastic member 29 are accommodated in each of the plurality of accommodating holes 26c. Some of the accommodating holes 26c are arranged at intervals along the second direction D2. Although not shown, in this embodiment, other of the plurality of accommodating holes 26c are arranged at intervals along the third direction D3. Other of the accommodating holes 26c may not be arranged at intervals along the third direction D3. In this case, all of the accommodating holes 26c are arranged at intervals along the second direction D2.

[0020] The support member 26e is plate-shaped and extends in a direction perpendicular to the first direction D1. The support member 26e is fixed to the rear surface 26b of the accommodation member 26a. The support member 26e is provided with a plurality of through-holes 26f penetrating the support member 26e in the first direction D1. When viewed from the first direction D1, each through-hole 26f is circular. The diameter of the through-hole 26f is smaller than the diameter of the accommodation hole 26c. When viewed from the first direction D1, each through-hole 26f overlaps with a different accommodation hole 26c. The inside of the accommodation hole 26c is connected to the inside of the peripheral wall portion 21 via the through-holes 26f.

[0021] The holding members 28 are generally cylindrical and extend in the first direction D1. Each holding member 28 detachably holds a different heat transfer pin 50. In the present embodiment, the holding members 28 are made of a metal such as copper, aluminum, nickel, silver, or gold. In the present embodiment, the holding members 28 are made of copper. The holding members 28 have a first portion 28a, a second portion 28b, and a third portion 28c.

[0022] The first portion 28a has a generally circular plate shape that expands in a direction perpendicular to the first direction D1. The first portion 28a is accommodated inside the accommodation hole 26c. The outer diameter of the first portion 28a is larger than the diameter of the through-hole 26f. This prevents the holding member 28 from coming off the heat dissipation portion 25. The elastic member 29 applies a downward elastic force to the first portion 28a.

[0023] The second portion 28b has a generally cylindrical shape and protrudes downward from the first portion 28a. The second portion 28b is inserted through the through-hole portion 26f. The lower end of the second portion 28b is located below the support member 26e.

[0024] The third portion 28c is generally cylindrical and protrudes downward from the second portion 28b. The third portion 28c has a tapered shape in which the outer diameter decreases toward the lower side. The third portion 28c is provided with a first threaded portion 28d. That is, the holding member 28 has the first threaded portion 28d. The first threaded portion 28d is a male thread provided on the outer circumferential surface of the third portion 28c.

[0025] As shown in FIG. 1, the heat sink 31 is in the form of a plate extending in a direction perpendicular to the first direction D1. The heat sink 31 is fixed to the lower end of the peripheral wall portion 21. The heat sink 31 closes the second opening 21b of the peripheral wall portion 21. The heat sink 31 holds a main body portion 32. More specifically, the main body portion 32 is fixed to a front surface 31a of the heat sink 31. A back surface 31b of the heat sink 31 is exposed to the outside of the semiconductor device 10. The heat sink 31 is made of a metal such as copper, aluminum, nickel, silver, or gold. In this embodiment, the holding member 28 is made of copper. That is, the holding member 28 is made of metal.

[0026] The main body 32 generates a high-frequency AC current from a DC current supplied from an external power source (not shown), for example. The main body 32 is accommodated inside the housing 20. The main body 32 is held by a heat sink 31. In this embodiment, the semiconductor device 10 has a plurality of chips 37. Some of the chips 37 are arranged at intervals in the second direction D2. Although not shown, the other chips 37 are arranged side by side in the third direction D3. The chips 37 may be arranged at intervals only in the second direction D2. The main body 32 has a substrate 33, a first bonding layer 34, a second bonding layer 36, the chips 37, a plurality of wires 39, and a sealing portion 60.

[0027] The back surface 33f of the substrate 33 is fixed to the front surface 31a of the heat sink 31 by a first bonding layer 34. The first bonding layer 34 is made of, for example, solder, a sintered silver material, or the like. In this embodiment, the first bonding layer 34 is solder. The substrate 33 has a wiring portion 33a, an insulating substrate 33b, and a conductor portion 33c.

[0028] The insulating substrate 33b has a plate shape extending in a direction perpendicular to the first direction D1. The insulating substrate 33b has insulating properties. The insulating substrate 33b is a ceramic substrate. In this embodiment, the insulating substrate 33b is a ceramic substrate made of ceramic such as silicon nitride and aluminum nitride.

[0029] The wiring portion 33a is provided on the surface of the insulating substrate 33b. The wiring portion 33a is made of metal. In this embodiment, the wiring portion 33a is made of copper. A circuit pattern (not shown) is formed on the wiring portion 33a. The surface of the wiring portion 33a is the device surface 33e. The device surface 33e is the surface of the substrate 33. The device surface 33e is one of the outer surfaces of the substrate 33 that faces one side (+D1 side) in the first direction D1. The device surface 33e faces the cover member 22 in the first direction D1.

[0030] The conductor portion 33c is provided on the back surface of the insulating substrate 33b. The conductor portion 33c is fixed to the front surface 31a of the heat sink 31 by the first bonding layer 34. This allows the main body portion 32 to be held by the heat sink 31. In other words, the heat sink 31 holds a surface of the outer surface of the substrate 33 that is different from the device surface 33e. The conductor portion 33c is made of metal. In this embodiment, the conductor portion 33c is made of copper.

[0031] The chip 37 is mounted on the device surface 33e of the substrate 33. More specifically, the back surface 37b of the chip 37 is fixed to the device surface 33e by the second bonding layer 36. The second bonding layer 36 is made of, for example, solder and a sintered silver material. In this embodiment, the second bonding layer 36 is solder. The chip 37 includes, for example, a power element for power control. The chip 37 is made of, for example, a semiconductor material such as silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). Each of the chips 37 of each main body 32 overlaps with the heat dissipation portion 25 of the cover member 22 when viewed from the first direction D1. Therefore, the front surface 37a of the chip 37, which is the surface of the outer surface of the chip 37 facing one side (+D1 side) of the first direction D1, faces the heat dissipation portion 25 in the first direction D1. When viewed from the first direction D1, the chip 37 overlaps with the multiple holding members 28. As shown in Fig. 3, when viewed from the first direction D1, the chip 37 has a substantially rectangular shape. The chip 37 is provided with multiple electrode portions 37d and protective portions 37f.

[0032] Each of the multiple electrode parts 37d is provided on the surface 37a of the chip 37. Each electrode part 37d is made of metal. In this embodiment, each electrode part 37d is made of aluminum. The protective part 37f is provided on the surface 37a of the chip 37. That is, the protective part 37f is provided on the outer surface of the chip 37. The chip 37 is provided with multiple protective parts 37f. Each protective part 37f is made of, for example, a resin such as polyimide (PI) and acrylic resin, or a metal such as copper. In this embodiment, each protective part 37f is made of polyimide. Each protective part 37f is disposed at a position that does not overlap with the electrode part 37d when viewed from the first direction D1. Note that, when each protective part 37f is made of a conductive material such as copper, a part of each protective part 37f may be disposed so as to overlap with the electrode part 37d.

[0033] As shown in FIG. 1, each of the multiple wires 39 electrically connects the chip 37 and the wiring portion 33a. The wires 39 are made of a metal such as aluminum or copper. In this embodiment, the wires 39 are made of aluminum. As shown in FIG. 3, one end of each of the wires 39 is joined to a different electrode portion 37d of the chip 37. The other end of each of the wires 39 is joined to the wiring portion 33a. In this way, each of the multiple wires 39 connects the different electrode portions 37d and the substrate 33.

[0034] As shown in FIG. 1, the sealing portion 60 covers the main body portion 32. The sealing portion 60 covers the chip 37. A part of the sealing portion 60 is disposed between the chip 37 and the cover member 22. The sealing portion 60 is made of an insulating resin. The sealing portion 60 is made of a resin mainly containing, for example, an epoxy resin, a phenolic resin, or an acrylic resin. In this embodiment, the sealing portion 60 is made of a silicone resin. In this embodiment, the sealing portion 60 is in a gel state. The sealing portion 60 can ensure insulation between the electrodes 37d, insulation between the wires 39, and insulation between the electrodes 37d and the wires 39. In addition, the sealing portion 60 can protect the main body portion 32. Therefore, according to this embodiment, the sealing portion 60 can increase the stability of the operation of the semiconductor device 10.

[0035] The heat transfer pin 50 is rod-shaped extending in the first direction D1. In this embodiment, the heat transfer pin 50 is substantially cylindrical extending in the first direction D1. The heat transfer pin 50 may have other shapes, such as a prismatic column shape. As shown in FIG. 2, the heat transfer pin 50 is tapered in shape with an outer diameter decreasing toward the lower side. The outer diameter of the lower end of the heat transfer pin 50, i.e., the end on the other side (-D1 side) in the first direction D1, is smaller than the outer diameter of the upper end, i.e., the end on one side (+D1 side) in the first direction D1. The outer diameter of the lower end of the heat transfer pin 50 is preferably 50 μm or more and 1.0 mm or less. The heat transfer pin 50 is made of a metal, such as copper, aluminum, silver, or gold. In this embodiment, the heat transfer pin 50 is made of copper. That is, the heat transfer pin 50 is made of a metal. The thermal conductivity of the heat transfer pin 50 is preferably greater than 200 W / m·K.

[0036] 1, in this embodiment, the lower end of the heat transfer pin 50 contacts the surface 37a of the chip 37. The semiconductor device 10 has a plurality of heat transfer pins 50. Each of the plurality of heat transfer pins 50 is preferably arranged such that one or more heat transfer pins 50 contact one chip 37. As shown in FIG. 2, the heat transfer pin 50 has a second screw portion 50a.

[0037] The second screw portion 50a is a female screw recessed downward from the surface of the heat transfer pin 50 facing upward. The second screw portion 50a is screwed into the first screw portion 28d of the holding member 28. As a result, the holding member 28 detachably holds the heat transfer pins 50 that are different from each other. The heat transfer pins 50 are held in the heat dissipation section 25 via the holding member 28. The heat transfer pins 50 extend downward from the holding member 28. As described above, when viewed from the first direction D1, each tip 37 overlaps with the holding member 28. Therefore, as shown in FIG. 1, the heat transfer pins 50 extend from the cover member 22 toward the tip 37. Note that, as shown in FIG. 2, it is not necessary to attach the heat transfer pins 50 to all the holding members 28, and it is not necessary to attach the heat transfer pins 50 to some of the holding members 28. That is, in this embodiment, the holding members 28 to which the heat transfer pins 50 are attached can be selected.

[0038] According to the present embodiment, the holding member 28 has the first screw portion 28d, and the heat transfer pin 50 has the second screw portion 50a that is screwed into the first screw portion 28d. Therefore, in the manufacturing process of the semiconductor device 10, the heat transfer pin 50 can be easily attached to the holding member 28. Therefore, an increase in the number of manufacturing steps for the semiconductor device 10 can be suppressed.

[0039] As shown in FIG. 1, the heat transfer pin 50 is inserted into the sealing portion 60. As described above, the lower end 50d of the heat transfer pin 50 contacts the surface 37a of the chip 37. More specifically, as shown in FIG. 3, the lower end 50d of each heat transfer pin 50 contacts the protective portion 37f provided on the surface 37a of the chip 37. Therefore, according to this embodiment, since the heat transfer pin 50 contacts the chip 37 via the protective portion 37f, it is possible to prevent the heat transfer pin 50 from directly contacting the chip 37. Therefore, it is possible to prevent the chip 37 from being damaged by direct contact with the heat transfer pin 50. Therefore, it is possible to improve the stability of the operation of the semiconductor device 10.

[0040] According to this embodiment, the cover member 22 has a plurality of holding members 28 that detachably hold different heat transfer pins 50. Therefore, as described above, the holding member 28 to which the heat transfer pins 50 are attached can be selected. Therefore, the heat transfer pins 50 can be attached only to the holding members 28 that are arranged at positions that do not overlap with the plurality of electrode portions 37d and the plurality of wires 39 of the chip 37 when viewed from the first direction D1. This makes it possible to prevent the heat transfer pins 50 from coming into contact with the electrode portions 37d and the wires 39 during the manufacturing process of the semiconductor device 10 and during the operation of the semiconductor device 10. Therefore, it is possible to prevent the electrode portions 37d and the wires 39 from being damaged, and to prevent the wires 39 from coming off the electrode portions 37d. Therefore, it is possible to more suitably improve the stability of the operation of the semiconductor device 10.

[0041] Furthermore, in this embodiment, the holding member 28 to which the heat transfer pins 50 are attached can be selected depending on the arrangement of the electrode portions 37d provided on the chip 37 and the wiring of the wires 39. Therefore, even if the semiconductor device 10 has a main body portion 32 having a different arrangement of the electrode portions 37d and the wiring of the wires 39, it is easy to use the lid member 22 of the same configuration. Therefore, the versatility of the lid member 22 can be improved, and an increase in the manufacturing man-hours and manufacturing costs of the lid member 22 can be suppressed.

[0042] Although not shown in the drawings, in the process of fixing the cover member 22 to the peripheral wall portion 21 in the manufacturing process of the semiconductor device 10, the cover member 22 holding the heat transfer pins 50 is moved downward from the upper side of the main body portion 32 covered by the sealing portion 60. As described above, in this embodiment, the heat transfer pins 50 are made of metal. Also, as described above, in this embodiment, the sealing portion 60 is made of gel-like resin. The hardness of the heat transfer pins 50 is greater than the hardness of the sealing portion 60. Therefore, in the process of fixing the cover member 22 to the peripheral wall portion 21, the heat transfer pins 50 can be easily inserted into the inside of the sealing portion 60 only by moving the cover member 22 holding the heat transfer pins 50 downward. Therefore, the lower end of the heat transfer pins 50 can be easily positioned close to the chip 37 only by moving the cover member 22 from the upper side to the lower side. More specifically, in this embodiment, the lower end of the heat transfer pins 50 can be easily brought into contact with the chip 37 only by moving the cover member 22 from the upper side to the lower side. Therefore, an increase in the number of manufacturing steps for the semiconductor device 10 can be suppressed.

[0043] As shown in FIG. 2, the elastic member 29 is disposed inside the accommodation hole 26c of the heat dissipation section 25. The elastic member 29 is disposed above the holding member 28. The upper end of the elastic member 29 is supported by a surface of the inner surface of the accommodation hole 26c facing downward. The lower end of the elastic member 29 is supported by a first portion 28a of the holding member 28. The elastic member 29 applies a downward elastic force to the holding member 28. The elastic member 29 applies an elastic force toward the chip 37 to the heat transfer pin 50 via the holding member 28. In this embodiment, the elastic member 29 is a coil spring. The elastic member 29 may be a spring of another configuration, such as a leaf spring.

[0044] According to this embodiment, the semiconductor device 10 includes a substrate 33, a main body 32 having a chip 37 mounted on a device surface 33e facing the upper side of the outer surface of the substrate 33, i.e., one side (+D1 side) of the first direction D1, a housing 20 that accommodates the main body 32, and a heat transfer pin 50. The housing 20 has a lid member 22 that faces the device surface 33e, and the heat transfer pin 50 is held by the lid member 22 and extends from the lid member 22 toward the chip 37. Therefore, as shown in FIG. 1, the lower end of the heat transfer pin 50 can be arranged close to the chip 37, so that heat generated in the chip 37 can be transferred to the lid member 22 via the heat transfer pin 50. In addition, the heat of the chip 37 transferred to the lid member 22 can be dissipated to the outside of the semiconductor device 10. As a result, the temperature of the chip 37 can be prevented from becoming too high, so that the stability of the operation of the semiconductor device 10 can be improved.

[0045] According to this embodiment, the heat transfer pins 50 are made of metal and are in contact with the chip 37. Therefore, the thermal conductivity of the heat transfer pins 50 can be increased compared to when the heat transfer pins 50 are made of resin. In addition, since the heat transfer pins 50 are in contact with the chip 37, the amount of heat transferred from the chip 37 to the heat transfer pins 50 can be increased. As a result, the amount of heat transferred from the chip 37 to the cover member 22 via the heat transfer pins 50 can be more suitably increased. Therefore, the temperature of the chip 37 can be more suitably prevented from becoming too high, and the stability of the operation of the semiconductor device 10 can be more suitably improved.

[0046] According to this embodiment, the lid member 22 has the lid body portion 23 and the heat dissipation portion 25, the heat transfer pin 50 is held by the heat dissipation portion 25, the thermal conductivity of the heat dissipation portion 25 is greater than that of the lid body portion 23, and a part of the heat dissipation portion 25 is exposed to the outside of the lid body portion 23. Therefore, compared to the case where the heat transfer pin 50 is held by the lid body portion 23, the amount of heat transferred from the chip 37 to the lid member 22 through the heat transfer pin 50 can be increased. Furthermore, since a part of the heat dissipation portion 25 is exposed to the outside of the lid body portion 23, the amount of heat dissipated from the lid member 22 to the outside of the semiconductor device 10 can be increased. As a result, the amount of heat dissipated from the chip 37 to the outside of the semiconductor device 10 through the heat transfer pin 50 and the heat dissipation portion 25 can be increased. Therefore, the temperature of the chip 37 can be more suitably prevented from becoming too high, and the stability of the operation of the semiconductor device 10 can be more suitably improved.

[0047] According to this embodiment, the semiconductor device 10 includes an elastic member 29 that applies an elastic force toward the chip 37 to the heat transfer pin 50. Therefore, even if the dimensional tolerance in the first direction D1 of each member constituting the housing 20 and each member constituting the main body 32 is large, the heat transfer pin 50 can be stably contacted with the chip 37. This makes it possible to suppress an increase in thermal resistance between the heat transfer pin 50 and the chip 37, and therefore to suppress a decrease in the amount of heat transferred from the chip 37 to the heat transfer pin 50. Therefore, it is possible to suppress a decrease in the amount of heat transferred to the cover member 22 via the heat transfer pin 50. Therefore, even if the dimensional tolerance in the first direction D1 of each member constituting the housing 20 and each member constituting the main body 32 is large, it is possible to suppress an excessive increase in the temperature of the chip 37. Therefore, the stability of the operation of the semiconductor device 10 can be more suitably improved.

[0048] During operation of the semiconductor device 10, the substrate 33 is thermally deformed due to heat generated in the chip 37 and the wiring portion 33a, and the position of the chip 37 in the first direction D1 may vary. In response to this, as described above, the semiconductor device 10 of this embodiment includes the elastic member 29 that applies an elastic force toward the chip 37 to the heat transfer pin 50. Therefore, even if the position of the chip 37 in the first direction D1 varies due to the thermal deformation of the substrate 33, the heat transfer pin 50 can be stably contacted with the chip 37. As a result, as described above, the amount of heat transferred from the chip 37 to the heat transfer pin 50 can be prevented from decreasing, and therefore the temperature of the chip 37 can be prevented from becoming too high. This makes it possible to more suitably improve the stability of the operation of the semiconductor device 10.

[0049] According to this embodiment, the outer diameter of the lower end of the heat transfer pin 50 is smaller than the outer diameter of the upper end. Therefore, the outer diameter of the lower end of the heat transfer pin 50 that contacts the chip 37 can be made small, and as shown in FIG. 3, the heat transfer pin 50 can be more effectively prevented from contacting the electrode portion 37d and the wire 39. This more effectively prevents the electrode portion 37d and the wire 39 from being damaged, and more effectively prevents the wire 39 from being removed from the electrode portion 37d. This more effectively improves the stability of the operation of the semiconductor device 10.

[0050] Furthermore, according to this embodiment, the outer diameter of the upper portion of the heat transfer pin 50 can be increased, which makes it easier to reduce the thermal resistance of the heat transfer pin 50. This makes it possible to more suitably increase the amount of heat transferred from the chip 37 to the cover member 22 via the heat transfer pin 50. This makes it possible to more suitably prevent the temperature of the chip 37 from becoming too high, which makes it possible to more suitably improve the stability of the operation of the semiconductor device 10.

[0051] According to this embodiment, the semiconductor device 10 includes a metal heat sink 31 that holds a surface of the outer surface of the substrate 33 that is different from the device surface 33e. Thus, the heat generated in the chip 37 can be dissipated to the outside of the semiconductor device 10 via the heat sink 31. This can increase the amount of heat dissipated from the chip 37 to the outside of the semiconductor device 10. Therefore, the temperature of the chip 37 can be more effectively prevented from becoming too high, and the stability of the operation of the semiconductor device 10 can be more effectively improved.

[0052] Second embodiment 4 is a schematic cross-sectional view showing a semiconductor device 110 of this embodiment. In the semiconductor device 110 of this embodiment, the heat transfer pins 150 do not contact the chip 37. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0053] The heat transfer pin 150 has a generally cylindrical shape extending in the first direction D1. The heat transfer pin 150 is inserted into the sealing portion 60. As described above, in this embodiment, the heat transfer pin 150 does not contact the chip 37. More specifically, the lower end of the heat transfer pin 150 is located in the vicinity of the chip 37. The sealing portion 60 is disposed between the lower end of the heat transfer pin 150 and the chip 37. That is, the heat transfer pin 150 contacts the chip 37 via the sealing portion 60. Other configurations of the heat transfer pin 150 of this embodiment are similar to other configurations of the heat transfer pin 50 of the first embodiment described above.

[0054] According to this embodiment, the heat transfer pin 150 is held by the cover member 22, extends from the cover member 22 toward the chip 37, and is inserted into the inside of the sealing portion 60. When the sealing portion 60 is not provided, the heat generated in the chip 37 is transferred to the heat transfer pin 150 through the air. Therefore, the amount of heat transferred from the chip 37 to the heat transfer pin 150 is small. In contrast, in this embodiment, the chip 37 and the heat transfer pin 150 contact each other through the sealing portion 60, which has a higher thermal conductivity than air. Therefore, the amount of heat transferred from the chip 37 to the heat transfer pin 150 can be increased compared to when the sealing portion 60 is not provided. Therefore, the temperature of the chip 37 can be prevented from becoming too high, and the stability of the operation of the semiconductor device 110 can be improved.

[0055] (Third embodiment) 5 is a schematic cross-sectional view showing a semiconductor device 210 of this embodiment. The semiconductor device 210 of this embodiment includes a coolant flow path 270. In the following description, the same components as those in the first embodiment described above are denoted by the same reference numerals, and the description thereof will be omitted.

[0056] Lid member 222 of housing 220 in this embodiment is in the shape of a plate extending in a direction perpendicular to first direction D1. Lid member 222 is disposed above main body 32. Lid member 222 has lid main body 23 and heat dissipation portion 225.

[0057] The heat dissipation portion 225 has a generally rectangular prism shape protruding in the first direction D1. The heat dissipation portion 225 is held on the inner surface of the cover hole portion 23a. The heat dissipation portion 225 has a first heat dissipation portion 225a, an insulating portion 25f, a second heat dissipation portion 26, and a plurality of holding members 28.

[0058] The first heat dissipation section 225a is a substantially rectangular prism protruding in the first direction D1. A lower portion of the first heat dissipation section 225a is located inside the lid hole section 23a. An upper portion of the first heat dissipation section 225a is located above the lid main body section 23. The upper portion of the first heat dissipation section 225a is exposed from the lid main body section 23. An insertion section 225d is provided in a portion of the first heat dissipation section 225a above the lid main body section 23. The insertion section 225d is a hole that penetrates the first heat dissipation section 225a in the second direction D2. In this embodiment, the insertion section 225d is circular when viewed from the second direction D2. The insertion section 225d may be a hole of another shape such as a rectangular shape or an elliptical shape. Other configurations of the first heat dissipation section 225a are similar to other configurations of the first heat dissipation section 25a of the first embodiment described above.

[0059] The refrigerant flow path 270 is a pipe through which the refrigerant C flows. A part of the refrigerant flow path 270 passes through the insertion portion 225d. Thus, a part of the refrigerant flow path 270 is provided in the heat dissipation portion 225. When viewed from the second direction D2, the refrigerant flow path 270 is annular. A part of the refrigerant flow path 270 that passes through the insertion portion 225d is held on the inner peripheral surface of the insertion portion 225d. A part of the refrigerant flow path 270 that passes through the insertion portion 225d contacts the inner peripheral surface of the insertion portion 225d. The refrigerant flow path 270 is made of a metal such as copper or aluminum. In this embodiment, the refrigerant flow path 270 is made of copper. In this embodiment, the refrigerant C is water. The refrigerant C may be other liquid refrigerants such as methanol and ethanol, or may be a gas refrigerant such as methane and ethane.

[0060] According to this embodiment, the semiconductor device 210 includes a coolant flow path 270 through which the coolant C flows, and a part of the coolant flow path 270 is provided in the heat dissipation section 225. Therefore, the heat of the chip 37 transferred to the heat dissipation section 225 via the heat transfer pin 50 can be transferred to the coolant C flowing inside the coolant flow path 270. Therefore, the heat of the chip 37 transferred to the heat dissipation section 225 can be dissipated from the heat dissipation section 225 to the air outside the semiconductor device 210, and can be dissipated to the outside of the semiconductor device 210 by the coolant C. Therefore, the amount of heat that can be dissipated from the heat dissipation section 225 to the outside of the semiconductor device 210 can be increased. Therefore, the temperature of the chip 37 can be more suitably prevented from becoming too high, and the stability of the operation of the semiconductor device 210 can be more suitably improved.

[0061] (Fourth embodiment) 6 is a schematic cross-sectional view showing a semiconductor device 310 of this embodiment. The semiconductor device 310 of this embodiment includes a heat dissipation member 375. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0062] In this embodiment, the heat dissipation member 375 is a heat sink. The heat dissipation member 375 is made of a metal such as copper or aluminum. In this embodiment, the heat dissipation member 375 is made of copper. The heat dissipation member 375 has a plurality of fins 375a protruding upward. The heat dissipation member 375 is disposed outside the housing 20. The heat dissipation member 375 is attached to the surface 25b of the first heat dissipation section 25a. That is, the heat dissipation member 375 is attached to the outer surface of the heat dissipation section 25. The heat dissipation member 375 dissipates heat from the cover member 22 to the outside of the housing 20. As described above, since the heat dissipation member 375 has a plurality of fins 375a, the contact area between the heat dissipation member 375 and the air outside the semiconductor device 310 can be increased.

[0063] According to this embodiment, the semiconductor device 310 includes a heat dissipation member 375 that is attached to the outer surface of the heat dissipation section 25 and dissipates heat from the cover member 22 to the outside of the housing 20. Therefore, the heat generated by the chip 37 and transferred to the heat dissipation section 25 via the heat transfer pins 50 can be dissipated to the outside of the semiconductor device 310 via the heat dissipation member 375. As described above, since the contact area between the heat dissipation member 375 and the air outside the semiconductor device 310 is large, the amount of heat dissipated from the heat dissipation member 375 to the outside of the semiconductor device 310 can be increased. Therefore, the temperature of the chip 37 can be more suitably prevented from becoming too high, and the stability of the operation of the semiconductor device 310 can be more suitably improved.

[0064] According to at least one of the embodiments described above, a semiconductor device capable of stably operating can be provided by having a lid member facing the device surface and heat transfer pins held by the lid member and extending from the lid member toward the chip.

[0065] The semiconductor device according to the embodiment includes the following additional features. (Appendix 1) a main body having a substrate and a chip mounted on a device surface of an outer surface of the substrate that faces one side in a first direction; a housing that accommodates the main body; A heat transfer pin; Equipped with the housing has a cover member facing the device surface, the heat transfer pin is held by the lid member and extends from the lid member toward the chip; Semiconductor device. (Appendix 2) The heat transfer pin is made of metal and is in contact with the chip. 2. The semiconductor device according to claim 1. (Appendix 3) A protective portion is provided on the outer surface of the chip, The heat transfer pin contacts the protective portion. 3. The semiconductor device according to claim 2. (Appendix 4) the main body portion has a sealing portion that covers the chip, The sealing portion has insulating properties, The heat transfer pin is inserted into the sealing portion. 4. The semiconductor device according to claim 1, (Appendix 5) The lid member has a lid main body and a heat dissipation part, The heat transfer pin is held by the heat dissipation portion, the heat dissipation portion has a thermal conductivity greater than that of the lid body portion; A portion of the heat dissipation portion is exposed to the outside of the lid main body portion. 5. The semiconductor device according to claim 1, (Appendix 6) A refrigerant flow path is provided through which the refrigerant flows, A part of the refrigerant flow path is provided in the heat dissipation section. 6. The semiconductor device according to claim 5. (Appendix 7) a heat dissipation member attached to an outer surface of the heat dissipation portion and configured to dissipate heat of the cover member to the outside of the housing; 6. The semiconductor device according to claim 5. (Appendix 8) The cover member has a plurality of holding members that detachably hold the heat transfer pins different from each other. 8. The semiconductor device according to claim 1, (Appendix 9) The retaining member has a first threaded portion, The heat transfer pin has a second threaded portion that is threadedly engaged with the first threaded portion. 9. The semiconductor device according to claim 8. (Appendix 10) an elastic member that applies an elastic force to the heat transfer pin toward the chip; 10. The semiconductor device according to claim 1, (Appendix 11) The outer diameter of the end portion of the heat transfer pin on the other side in the first direction is smaller than the outer diameter of the end portion of the heat transfer pin on the one side in the first direction. 11. The semiconductor device according to claim 1. (Appendix 12) a metal heat sink that holds a surface of the outer surface of the substrate that is different from the device surface; 12. The semiconductor device according to claim 1. (Appendix 13) The body portion has a plurality of wires, a plurality of electrode portions are provided on an outer surface of the chip that faces one side in the first direction; Each of the plurality of wires connects a different one of the electrode portions to the substrate. 13. The semiconductor device according to claim 1,

[0066] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope of the invention and its equivalents described in the claims, as well as in the scope and spirit of the invention. [Explanation of symbols]

[0067] 10,110,210,310...semiconductor device, 20...housing, 22,222...lid member, 23...lid main body, 25,225...heat dissipation portion, 28...holding member, 28d...first screw portion, 29...elastic member, 31...heat dissipation plate, 32...main body, 33...substrate, 33e...device surface, 37...chip, 37d...electrode portion, 37f...protective portion, 39...wire, 50,150...heat transfer pin, 50a...second screw portion, 60...sealing portion, 270...refrigerant flow path, 375...heat dissipation member, C...refrigerant, D1...first direction

Claims

1. a main body having a substrate and a chip mounted on a device surface of an outer surface of the substrate that faces one side in a first direction; a housing that accommodates the main body; A heat transfer pin; Equipped with the housing has a cover member facing the device surface, the heat transfer pin is held by the lid member and extends from the lid member toward the chip; Semiconductor device.

2. The heat transfer pin is made of metal and is in contact with the chip. The semiconductor device according to claim 1 .

3. A protective portion is provided on the outer surface of the chip, The heat transfer pin contacts the protective portion. The semiconductor device according to claim 2 .

4. the main body portion has a sealing portion that covers the chip, The sealing portion has insulating properties, The heat transfer pin is inserted into the sealing portion. The semiconductor device according to claim 1 .

5. The lid member has a lid main body and a heat dissipation part, The heat transfer pin is held by the heat dissipation portion, the heat dissipation portion has a thermal conductivity greater than that of the lid body portion; A portion of the heat dissipation portion is exposed to the outside of the lid main body portion. The semiconductor device according to claim 1 .

6. A refrigerant flow path is provided through which the refrigerant flows, A part of the refrigerant flow path is provided in the heat dissipation section. The semiconductor device according to claim 5 .

7. a heat dissipation member attached to an outer surface of the heat dissipation portion and configured to dissipate heat of the cover member to the outside of the housing; The semiconductor device according to claim 5 .

8. The cover member has a plurality of holding members that detachably hold the heat transfer pins different from each other. The semiconductor device according to claim 1 .

9. The retaining member has a first threaded portion, The heat transfer pin has a second threaded portion that is threadedly engaged with the first threaded portion. The semiconductor device according to claim 8.

10. an elastic member that applies an elastic force to the heat transfer pin toward the chip; The semiconductor device according to claim 1 .

11. an outer diameter of the end portion of the heat transfer pin on the other side in the first direction is smaller than an outer diameter of the end portion of the heat transfer pin on the one side in the first direction; The semiconductor device according to claim 1 .

12. a metal heat sink that holds a surface of the outer surface of the substrate that is different from the device surface; The semiconductor device according to claim 1 .

13. The body portion has a plurality of wires, a plurality of electrode portions are provided on an outer surface of the chip that faces one side in the first direction; Each of the plurality of wires connects a different one of the electrode portions to the substrate. The semiconductor device according to claim 1 .

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