Substrate and semiconductor device

Abstract

To provide a substrate that can improve the adhesive strength between a sealing resin and a substrate.SOLUTION: A substrate 1 includes a glass cloth 10, and may have a sealing resin 6 disposed thereon. The substrate 1 has a first surface 1s. The first surface 1s may be in contact with the sealing resin 6. The first surface 1s includes a portion p where the glass cloth 10 is exposed.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a substrate and a semiconductor device. [Background technology]

[0002] Japanese Patent Laid-Open Publication No. 2023-76696 (Patent Document 1) discloses a semiconductor device including a substrate on which a light-emitting element is mounted, and a sealing resin is connected to the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Document 1: JP 2023-76696 A [Summary] However, there is room for improvement in the adhesive strength between the sealing resin and the substrate.

[0004] A substrate according to an embodiment of the present disclosure includes a glass cloth and may have a sealing resin disposed thereon. The substrate has a first surface. The first surface may be in contact with the sealing resin. The first surface includes a portion where the glass cloth is exposed.

[0005] A semiconductor device according to an embodiment of the present disclosure includes the substrate and a sealing resin, the sealing resin being in contact with the portion of the first surface where the glass cloth is exposed. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic plan view of a semiconductor device according to a first embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG. [Diagram 3] FIG. 3 is a schematic cross-sectional view of the substrate. [Figure 4]4 is a schematic cross-sectional view of the substrate. [Detailed Description] The details of the embodiments of the present disclosure will be described with reference to the drawings. Note that the same or corresponding parts in the following drawings are given the same reference numerals, and the description thereof will not be repeated. At least some of the configurations of the embodiments described below may be combined in any manner.

[0007] Embodiment 1 <Configuration of Semiconductor Device> Fig. 1 is a schematic plan view of a semiconductor device 100 according to the first embodiment. Fig. 2 is a schematic cross-sectional view taken along line II-II in Fig. 1.

[0008] 1 and 2 is, for example, a semiconductor device 100 on which a light-emitting element 2 is mounted, and mainly includes a substrate 1, the light-emitting element 2, a metal layer 5, and a sealing resin 6. The dotted line in FIG. 1 indicates the outline of the sealing resin 6.

[0009] The substrate 1 has a first surface 1s and a second surface 2s. The first surface 1s is a surface that can be in contact with the sealing resin 6. The second surface 2s is a surface opposite to the first surface 1s. As shown in FIG. 1, the directions in which the first surface 1s and the second surface 2s extend are the x direction and the y direction. The y direction is a direction perpendicular to the x direction. As will be described later, the substrate 1 has a plurality of glass cloths 10 laminated thereon. The direction in which the glass cloths are laminated is the z direction. The z direction is a direction perpendicular to the x direction and the y direction.

[0010] The metal layer 5 includes a first front surface land 51a, a second front surface land 51b, a first back surface land 52a, and a second back surface land 52b. As shown in FIG. 2, the first front surface land 51a and the second front surface land 51b are arranged on the first surface 1s. The first back surface land 52a and the second back surface land 52b are arranged on the second surface 2s. As shown in FIG. 2, the first front surface land 51a and the second front surface land 51b are arranged spaced apart from each other in the x direction. The first back surface land 52a and the second back surface land 52b are arranged spaced apart from each other in the x direction.

[0011] The first front surface land 51a is electrically connected to the light emitting element 2 via a conductive adhesive 3 such as solder. The light emitting element 2 is electrically connected to the second front surface land 51b via a wire 4. The first front surface land 51a is electrically connected to the first back surface land 52a (not shown). The second front surface land 51b is electrically connected to the second back surface land 52b (not shown). The wire 4 is formed, for example, by wire bonding.

[0012] The metal layer 5 is formed by, for example, laminating a copper plating layer, a nickel plating layer, and a gold plating layer. The metal layer 5 may be formed by patterning a copper foil formed on the first surface 1s of the substrate 1, and then performing electrolytic plating on the surface of the copper foil.

[0013] As shown in Fig. 2, the light-emitting element 2 is sealed with a sealing resin 6. Specifically, the light-emitting element 2 is disposed inside the sealing resin 6. As shown in Fig. 2, in a region of the first surface 1s where the metal layer 5 is not formed, the first surface 1s includes a portion p that is in contact with the sealing resin 6. The material constituting the sealing resin 6 is, for example, a silicone resin.

[0014] The substrate 1 includes a plurality of glass cloths 10 and an epoxy resin 11. The plurality of glass cloths 10 may be configured, for example, in two layers or three layers. In the present embodiment 1, the glass cloth 10 is configured in three layers and includes a first glass cloth layer 10a, a second glass cloth layer 10b, and a third glass cloth layer 10c.

[0015] The glass cloth 10 is made of flat-woven glass fibers. That is, the first glass cloth layer 10a, the second glass cloth layer 10b, and the third glass cloth layer 10c are each made of glass fibers extending in directions intersecting each other.

[0016] The epoxy resin 11 connects the first glass cloth layer 10a, the second glass cloth layer 10b and the third glass cloth layer 10c together so as to be impregnated into the glass fibers of the glass cloth 10.

[0017] Here, the substrate 1 according to the first embodiment is characterized in that the first surface 1s includes a portion p where the glass cloth 10 is exposed, as shown in FIG. 2. Specifically, as shown in FIG. 2, on the first surface 1s, the metal layer 5 is formed on the epoxy resin 11. On the other hand, on the first surface 1s, in an area where the metal layer 5 is not formed, a portion p where the first glass cloth layer 10a is exposed is formed. The sealing resin 6 is in contact with the portion p where the first glass cloth layer 10a is exposed on the first surface 1s. Note that a part of the sealing resin 6 may be impregnated into the glass fiber exposed in the portion p.

[0018] At the bonding interface between the portion p and the sealing resin 6, the glass fibers exposed on the surface of the first glass cloth layer 10a act as uneven portions, increasing the bonding area between the sealing resin 6 and the portion p where the first glass cloth layer 10a is exposed, thereby improving the adhesive strength between the sealing resin 6 and the substrate 1.

[0019] <Method of Manufacturing Substrate 1> A method for manufacturing the substrate 1 will be described below. In the method for manufacturing the substrate 1, first, a step (S1) of preparing a base material 101 is performed. In this step (S1), copper foil is formed on the entire surface 101s of the base material 101. The base material 101 includes a plurality of glass cloths 10 and an epoxy resin. The glass cloths 10 are impregnated with the epoxy resin 11, and the copper foil may be connected to the epoxy resin 11.

[0020] Next, a step (S2) of forming a metal layer 5 is performed. In this step (S2), first, the copper foil is patterned. As shown in Fig. 3, the metal layer 5 is formed by patterning the copper foil formed on the surface 101s of the base material 101, and then performing electrolytic plating on the surface of the copper foil.

[0021] Next, a step (S3) of exposing the glass cloth 10 is performed. In this step (S3), as shown in FIG. 4, the epoxy resin 11 in the area on the surface 101s of the base material 101 where the metal layer 5 is not formed is removed by a solvent. As a result, the first glass cloth layer 10a is exposed in the area on the surface 101s of the base material 101 where the metal layer 5 is not formed. In this manner, the substrate 1 having the first surface 1s on which the first glass cloth layer 10a is exposed is manufactured. As described above, the portion p on the first surface 1s on which the first glass cloth layer 10a is exposed may be in contact with the sealing resin 6. In this step (S3), the epoxy resin 11 impregnated in the surface layer of the first glass cloth layer 10a in the area on which the metal layer 5 is not formed may be removed by adjusting the treatment conditions using the solvent.

[0022] <Action and effect> The substrate 1 according to the present disclosure includes a glass cloth 10, and may have a sealing resin 6 disposed thereon. The substrate 1 has a first surface 1s. The first surface 1s may be in contact with the sealing resin 6. The first surface 1s includes a portion p where the glass cloth 10 is exposed.

[0023] In this way, when the sealing resin 6 is formed so as to contact the first surface 1s, the bonding area between the sealing resin 6 and the exposed portion p of the first glass cloth layer 10a increases, and as a result, the adhesive strength between the sealing resin 6 and the substrate 1 is improved.

[0024] The semiconductor device 100 according to the present disclosure includes the above-mentioned substrate 1 and a sealing resin 6. The sealing resin 6 is in contact with the portion p of the first surface 1s where the glass cloth 10 is exposed. In this way, the bonding area between the sealing resin 6 and the portion p where the first glass cloth layer 10a is exposed increases. As a result, the adhesive strength between the sealing resin 6 and the substrate 1 is improved.

[0025] The semiconductor device 100 further includes a light emitting element 2. The light emitting element 2 is disposed inside the sealing resin. In this manner, the semiconductor device 100 as a light emitting device having improved adhesive strength between the sealing resin 6 and the substrate 1 is obtained.

[0026] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. Unless inconsistent, at least two of the embodiments disclosed herein may be combined. The basic scope of the present disclosure is indicated by the claims, not the above description, and is intended to include all modifications within the meaning and scope of the claims. [Explanation of symbols]

[0027] 1 substrate, 1s first surface, 2 light emitting element, 2s second surface, 3 conductive adhesive portion, 4 wire, 5 metal layer, 6 sealing resin, 10 glass cloth, 10a first glass cloth layer, 10b second glass cloth layer, 10c third glass cloth layer, 11 epoxy resin, 51a first front surface land, 51b second front surface land, 52a first back surface land, 52b second back surface land, 100 semiconductor device, 101 base material, 101s front surface, p portion.

Claims

1. A substrate including a glass cloth and on which a sealing resin can be disposed, the substrate has a first surface with which the sealing resin can come into contact, The first surface of the substrate includes a portion where the glass cloth is exposed.

2. A substrate according to claim 1; and a sealing resin. The sealing resin is in contact with the exposed portion of the glass cloth on the first surface.

3. The semiconductor device according to claim 2 , further comprising a light emitting element disposed inside the sealing resin.

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