Die bond film and semiconductor device

Abstract

To provide a die bond film that can both suppress bonding wire connection defects to electrode portions of semiconductor chips and maintain sufficient adhesion to lead frames even after reflow processing.SOLUTION: A die bond film according to the present invention is a die bond film containing thermosetting resin as an organic component, a storage modulus at 150°C is 200 MPa or higher after thermal curing, and a shear adhesive force to a silver-plated copper lead frame at 260°C is 3 MPa or higher after 168 hours of exposure to a temperature of 85°C and a relative humidity of 60%RH with the silver-plated copper lead frame covered.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a die bond film and a semiconductor device. [Background technology]

[0002] 2. Description of the Related Art It is conventionally known to use a die bond film in order to attach (die bond) a semiconductor chip (die) onto a lead frame serving as an adherend (for example, Patent Document 1 below). That is, it is known that the semiconductor chip is attached (die-bonded) to the lead frame with the die-bonding film interposed therebetween.

[0003] The lead frame typically comprises a metal substrate, a plurality of chip mounting areas (die pads) formed on one surface of the metal substrate, and a plurality of lead terminals formed on one surface of the metal substrate so as to surround each of the plurality of chip mounting areas. In the lead frame configured as described above, the semiconductor chip is attached to the chip mounting area (die pad) via the die bond film.

[0004] In the lead frame configured as described above, a copper alloy substrate or the like is used as the metal substrate, the chip mounting area (die pad) is formed by silver plating a predetermined area on one side of the metal substrate, and the lead terminals are formed of an aluminum alloy or the like. In the following description, a structure in which the plurality of semiconductor chips are attached to each of the plurality of chip mounting regions via the die bond film is referred to as a semiconductor device.

[0005] In the semiconductor device, the electrode portions arranged on the surfaces of each of the plurality of semiconductor chips are electrically connected to the lead terminals of the lead frame by bonding wires, and then a molding process is performed so as to embed all of the plurality of semiconductor chips in molding resin. After the molding process, the semiconductor device is placed on an electronic circuit board such as a motherboard with a metal material such as tin interposed therebetween, and then subjected to a reflow process to perform solder bonding via the metal material. Thus, the semiconductor device after molding is mounted on an electronic circuit board such as a motherboard by soldering via the metal material.

[0006] The bonding wire is usually formed by processing a gold alloy into a thin wire (hereinafter also referred to as a gold alloy thin wire). Furthermore, when a gold alloy thin wire is used as the bonding wire, the electrode portion disposed on the surface of the semiconductor chip is usually made of aluminum, which easily forms an intermetallic compound with the gold contained in the gold alloy. In order to more fully form the intermetallic compound between gold and aluminum, the gold alloy thin wire serving as the bonding wire is connected to the electrode portion of the semiconductor chip by ultrasonic bonding after heating the lead frame at a temperature of 150 to 200°C.

[0007] The above-mentioned reflow process is usually performed by using a reflow furnace. Specifically, the above-mentioned reflow process is performed while the semiconductor device after the molding process is passed through the inside of the reflow furnace. The reflow process is carried out under conditions such that the maximum temperature inside the reflow furnace is 260° C., in order to sufficiently melt the metal material, such as tin, to achieve a sufficient solder joint. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] JP 2011-23607 A Summary of the Invention [Problem to be solved by the invention]

[0009] However, when connecting the bonding wire and the electrode portion of the semiconductor chip by ultrasonic bonding as described above, the ultrasonic waves irradiated can cause severe vibrations in the semiconductor chip, which can result in poor connection between the bonding wire and the electrode portion of the semiconductor chip. Furthermore, in recent years, there has been an increasing demand for the semiconductor chips to be made smaller and thinner. Furthermore, as the planar dimensions of the semiconductor chip are reduced in response to the demand for miniaturization, or the thickness of the semiconductor chip is reduced in response to the demand for thinning, the effect of vibrations on the semiconductor chip caused by the ultrasonic waves irradiated during ultrasonic bonding becomes greater.

[0010] Furthermore, after the above-mentioned reflow treatment, the die bond film may lift off from the chip mounting area of ​​the lead frame. That is, the adhesive state of the die bond film to the lead frame may not be sufficiently maintained. The problem of the above-mentioned inability to adequately maintain the adhesive state of the die bond film to the lead frame becomes particularly pronounced when the semiconductor device before the reflow treatment is exposed to a high temperature and high humidity environment for a long period of time, for example, when it is exposed to an environment of a temperature of 85°C and a relative humidity of 60% RH for about 168 hours.

[0011] Therefore, it is desirable to suppress poor connection of the bonding wire to the electrode portion of the semiconductor chip and to be able to sufficiently maintain the adhesion state of the die bond film to the lead frame even after the reflow process, but it cannot be said that sufficient consideration has been given to these issues yet.

[0012] Therefore, the present invention aims to provide a die bond film that can suppress poor connection of the bonding wire to the electrode portion of the semiconductor chip and can sufficiently maintain its adhesion to the lead frame even after reflow processing, and to provide a semiconductor device equipped with the die bond film. [Means for solving the problem]

[0013] As a result of intensive research, the inventors have found that in a die bond film containing a thermosetting resin as an organic component, after thermal curing, the storage modulus at relatively high temperatures is a predetermined value or more, and further, after being attached to a silver-plated copper lead frame and exposed to a high temperature and high humidity environment, the shear adhesive strength at high temperatures to the adherend is a predetermined value or more, thereby simultaneously solving the above two problems, and have arrived at the present invention.

[0014] That is, the die bond film according to the present invention is A die bond film containing a thermosetting resin as an organic component, After heat curing, the storage modulus at 150°C is 200 MPa or more, When attached to a silver-plated copper lead frame and exposed to an environment of 85°C and 60% relative humidity for 168 hours, the shear adhesive strength to the silver-plated copper lead frame at 260°C is 3 MPa or more.

[0015] The semiconductor device according to the present invention comprises: a lead frame having at least one chip mounting area for mounting a semiconductor chip; At least one die bond film attached to at least one of the chip mounting areas; At least one semiconductor chip attached to at least one of the die bond films; The die-bonding film is the die-bonding film according to claim 1 or 2, The lead frame is a silver plated copper lead frame. Effect of the Invention

[0016] According to the present invention, it is possible to provide a die bond film that can simultaneously suppress poor connection of bonding wires to electrode portions of a semiconductor chip and sufficiently maintain the adhesive state to a lead frame even after a reflow process. Also, a semiconductor device including the above-mentioned die bond film can be provided. [Brief description of the drawings]

[0017] [Figure 1] FIG. 1 is a perspective view showing a configuration of a die bond film according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a cross-sectional view for explaining an example of use of the die bond film according to one embodiment of the present invention. [Diagram 3] FIG. 1 is a cross-sectional view showing a configuration of a dicing die-bonding film having a die-bonding film according to one embodiment of the present invention. [Figure 4A] 1A to 1C are cross-sectional views each showing a schematic view of a half-cut process in a method for manufacturing a semiconductor integrated circuit. [Figure 4B] 1A to 1C are cross-sectional views each showing a schematic view of a half-cut process in a method for manufacturing a semiconductor integrated circuit. [Figure 4C] 1A to 1C are cross-sectional views each showing a schematic diagram of a back grinding process in a method for manufacturing a semiconductor integrated circuit. [Figure 4D] 1A to 1C are cross-sectional views each showing a schematic diagram of a back grinding process in a method for manufacturing a semiconductor integrated circuit. [Figure 5A] 1A to 1C are cross-sectional views each showing a schematic view of a mounting step in a method for manufacturing a semiconductor integrated circuit. [Figure 5B] 1A to 1C are cross-sectional views each showing a schematic view of a mounting step in a method for manufacturing a semiconductor integrated circuit. [Figure 6A] 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step performed at a low temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 6B]1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step performed at a low temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 6C] 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step performed at a low temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 7A] 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step at room temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 7B] 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step at room temperature in a method for manufacturing a semiconductor integrated circuit. [Figure 8] 1A to 1C are cross-sectional views each showing a kerf maintaining step in a method for manufacturing a semiconductor integrated circuit. [Figure 9] 1A to 1C are cross-sectional views each showing a pickup step in a method for manufacturing a semiconductor integrated circuit. [Figure 10] 11A to 11C are cross-sectional views each showing a schematic view of a mounting step in another manufacturing method of a semiconductor integrated circuit. [Figure 11] 10A to 10C are cross-sectional views each showing a schematic diagram of a dicing step in another method for manufacturing a semiconductor integrated circuit. [Figure 12] 11A to 11C are cross-sectional views each showing a pickup step in another method for manufacturing a semiconductor integrated circuit. [Figure 13] FIG. 2 is a cross-sectional view showing a schematic view of a semiconductor chip (die) being bonded to an adherend via a die bond film. [Figure 14] 1 is a cross-sectional view showing a configuration of a semiconductor device according to an embodiment of the present invention; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Hereinafter, one embodiment of the present invention will be described.

[0019] [Die bond film] The die-bonding film 10 according to this embodiment is in a sheet shape as shown in FIG. 1, and contains a thermosetting resin as an organic component. Moreover, the die bond film 10 according to this embodiment has a storage modulus at 150° C. of 200 MPa or more after thermal curing. Furthermore, the die bond film 10 of this embodiment, when adhered to a silver-plated copper frame lead, has a shear adhesive strength to the silver-plated copper lead frame of 3 MPa or more at 260°C after being exposed to an environment of a temperature of 85°C and a relative humidity of 60%RH for 168 hours. In this specification, the silver-plated copper lead frame refers to a lead frame having a metal substrate and a plurality of chip mounting areas (die pads) formed on one surface of the metal substrate, in which the metal substrate is made of copper and the plurality of chip mounting areas are formed by silver plating. The die bond film 10 according to this embodiment is usually in the form of a long strip, and is stored in a state where it is wound into a cylindrical shape, that is, in the form of a roll.

[0020] As shown in FIG. 2, the die bond film 10 according to this embodiment is used for attaching (die bonding) a semiconductor chip (die) 20 onto an adherend 30 such as a lead frame. Specifically, the die bond film 10 according to this embodiment is used such that one surface 10A is attached to the semiconductor chip 20, and the other surface 10B is attached to the adherend 30. The lead frame is preferably a silver-plated copper lead frame. That is, the die bond film 10 is preferably used to attach the semiconductor chip 20 to the silver-plated copper lead frame.

[0021] In addition, the exposed surface of the semiconductor chip (die) 20, specifically, the surface opposite to the surface adhered to the die bond film 10, is provided with at least one electrode portion (not shown), and the electrode portion is connected to one end of a bonding wire such as a gold alloy thin wire. Specifically, the electrode portion is ultrasonically bonded to one end of a bonding wire such as a gold alloy thin wire at a temperature within a range of 150 to 200°C. Furthermore, when the semiconductor chip 20 is attached to the chip mounting area (die pad) of the lead frame via a die bond film 10, as explained in the Background Art section above, ultrasonic bonding with one end of the bonding wire is performed by heating the lead frame at any temperature within the range of 150 to 200°C.

[0022] As described above, the die bond film 10 according to this embodiment exhibits a relatively high storage modulus of 200 MPa or more at 150° C. after thermal curing. That is, the die bond film 10 according to this embodiment exhibits sufficient hardness at a temperature of 150° C. after being thermally cured. As described above, when one end of a bonding wire such as a gold alloy thin wire is connected to the electrode portion of the semiconductor chip 20 by ultrasonic bonding, the ultrasonic bonding is performed at any temperature within the range of 150 to 200°C. Since the die bond film 10 according to this embodiment exhibits sufficient hardness at a temperature of 150° C., it is possible to sufficiently suppress the occurrence of violent vibrations in the semiconductor chip 20 due to the ultrasonic waves irradiated during ultrasonic bonding. As a result, in the die bond film 10 according to this embodiment, the occurrence of poor connection of the bonding wires to the electrode portions of the semiconductor chip 20 can be suppressed. Furthermore, even if the mechanical strength of the semiconductor chip 20 decreases by reducing the thickness of the semiconductor chip 20 in response to a demand for thinning, damage such as cracking caused by the ultrasonic waves irradiated during ultrasonic bonding can be prevented from occurring in the thinned semiconductor chip 20.

[0023] Furthermore, as described above, the die bond film 10 of this embodiment, when adhered to a silver-plated copper lead frame, has a shear adhesive strength to the silver-plated copper lead frame of 3 MPa or more at 260°C after being exposed to an environment of 85°C and 60% RH for 168 hours. In other words, the die bond film 10 of this embodiment can exhibit sufficient shear adhesive strength to the silver-plated copper lead frame even when it is attached to the silver-plated copper lead frame and exposed to a high temperature and high humidity environment for a long period of time, and then subjected to a reflow treatment at a temperature of 260°C. Therefore, the die bond film 10 according to this embodiment can sufficiently maintain the adhesive state to the lead frame even after the reflow treatment.

[0024] The storage modulus at 150° C. of the die bond film 10 after thermal curing can be determined as follows. Specifically, a die bond film having a length of 40 mm (measurement length), a width of 10 mm, and a thickness of 200 μm is used as a test piece. Next, the test piece is heated at a temperature of 150° C. for 1 hour, and then heated at a temperature of 175° C. for 1 hour to perform a thermal curing treatment. Then, the storage modulus (tensile storage modulus) of the test piece is measured in a temperature range of 0° C. to 280° C. using a solid viscoelasticity measuring device (e.g., Model RSAIII, manufactured by Rheometric Scientific Co., Ltd.) under the conditions of a frequency of 10 Hz, a strain amount of 0.1%, a heating rate of 10° C. / min, and a chuck distance of 22.5 mm. The measurement is carried out by pulling the test piece in the length direction. By reading the value at 150°C, the storage modulus at 150°C can be obtained.

[0025] The storage modulus at 150° C. is preferably 250 MPa or more, more preferably 300 MPa or more, and even more preferably 400 MPa or more. By setting the lower limit of the storage modulus at 150°C to the above value, it is possible to more sufficiently prevent the semiconductor chip 20 from vigorous vibration caused by the ultrasonic waves irradiated during ultrasonic bonding. This makes it possible to further prevent poor connection of the bonding wires to the electrodes of the semiconductor chip 20. In addition, the storage modulus at 150°C may be 2000MPa or less, 1500MPa or less, or 1000MPa or less. By setting the upper limit of the storage modulus at 150°C to the above-mentioned value, it is possible to prevent the die bond film 10 from becoming excessively hard at a temperature of 150°C. As a result, even if the thickness of the semiconductor chip 20 is reduced in response to a demand for thinning and the mechanical strength of the semiconductor chip 20 is reduced, it is possible to further prevent the thinned semiconductor chip 20 from being damaged, such as cracked, by the ultrasonic waves irradiated during ultrasonic bonding.

[0026] The storage modulus at 150° C. can be appropriately adjusted, for example, by changing the epoxy equivalent of the epoxy resin, the hydroxyl equivalent of the phenol resin, or the content of the filler (such as silica filler) in the die bond film 10. For example, the storage modulus at 150° C. can be increased by decreasing the epoxy equivalent of the epoxy resin, decreasing the hydroxyl equivalent of the phenol resin, or increasing the content of the filler.

[0027] The shear adhesion to a silver plated copper lead frame at 260° C. can be measured according to the following procedure. (1) A die bond film with planar dimensions of 5 mm x 5 mm is attached to the chip mounting area (silver-plated) of a copper lead frame to obtain a laminate. The die bond film is attached using a die bonder (manufactured by Fasford Technology, product name "Die Bonder DB830plus+") under the conditions of a temperature of 130°C, a load of 0.2 MPa, and a bonding time of 2 seconds. (2) The laminate is heated at a temperature of 150° C. for 1 hour, and then further heated at a temperature of 175° C. for 1 hour to thermally cure the die-bonding film. (3) After the die-bonding film is thermally cured, the laminate is exposed to an environment of a temperature of 85° C. and a relative humidity of 60% RH for 168 hours to obtain a test specimen for measuring shear adhesive strength. (4) Using a shear tester (manufactured by Dage, product name "Dage4000"), the following conditions are adopted for the test specimen: measurement speed (die shear speed) 500 μm / s, measurement gap (die shear height) 50 μm, and stage temperature 260° C., and the shear adhesion strength to a silver-plated copper lead frame is measured. The shear adhesive strength may be measured according to the above-mentioned (4) for the laminate before being exposed to an environment of a temperature of 85° C. and a relative humidity of 60% RH, i.e., for the laminate after the above-mentioned (2).

[0028] The shear adhesive strength to a silver-plated copper lead frame at 260° C. is preferably 4 MPa or more, and more preferably 5 MPa or more. Since the lower limit of the shear adhesion strength to a silver-plated copper lead frame at 260°C is the above-mentioned value, the die bond film 10 can exhibit even more sufficient shear adhesion strength to the silver-plated copper lead frame even when it is exposed to a high temperature and high humidity environment for a long period of time while attached to the silver-plated copper lead frame, and then subjected to a reflow treatment at a temperature of 260°C. This allows the die bond film 10 to maintain the bonded state to the lead frame even more sufficiently even after the reflow treatment. Also, the upper limit of shear adhesion to a silver-plated copper lead frame at 260° C. is typically 30 MPa.

[0029] The above shear adhesive strength can be adjusted, for example, by changing the monomer unit of an acrylic polymer (described in detail later) that can be contained in the die bond film 10. For example, the above shear adhesive strength can be increased by making the acrylic polymer have, in its molecule, a monomer unit that has a stronger interaction with the functional group present on the surface of the lead frame.

[0030] The die bond film 10 according to this embodiment preferably has a melt viscosity at 120° C. of 100 Pa·s or more. Since the melt viscosity at 120°C is a relatively high value as described above, the die bond film 10 is prevented from becoming excessively fluid even at the high temperature of 120°C, and as a result, the die bond film 10 can have excellent shape retention. That is, the die bond film 10 can sufficiently maintain the film shape even at a high temperature of 120°C.

[0031] Here, as described above, the die bond film 10 is used with one surface 10A attached to the semiconductor chip 20 and the other surface 10B attached to the adherend 30. The other surface 10B is then attached to the adherend 30 in a high-temperature environment of usually 100 to 130°C. As described above, the die bond film 10 of this embodiment can exhibit the above-mentioned characteristics even at a high temperature of 120°C, and therefore can adequately maintain the film shape even in a high-temperature environment (100 to 130°C) in which the other surface 10B is adhered to the adherend 30. That is, the die bond film 10 can be attached to the adherend 30 on one surface 10B while one surface 10A is attached to the semiconductor chip 20, while sufficiently maintaining the film shape. Therefore, when the adherend 30 is a lead frame as described above, when one end of a bonding wire such as a gold alloy fine wire is ultrasonically bonded to the electrode portion of the semiconductor chip 20, the ultrasonic waves irradiated can be prevented from causing a change in the mounting position of the semiconductor chip 20 in the chip mounting area (die pad) of the lead frame, i.e., the occurrence of chip shift can be suppressed.

[0032] The melt viscosity at 120° C. is more preferably 200 Pa·s or more, even more preferably 1000 Pa·s or more, and even more preferably 2000 Pa·s or more. When the lower limit of the melt viscosity at 120° C. is the above-mentioned value, the die bond film 10 can maintain the film shape even more. Thereby, the die bond film 10 can further suppress the occurrence of variation in the mounting position of the semiconductor chip 20 in the chip mounting region (die pad) of the lead frame, that is, the occurrence of chip shift. In addition, the melt viscosity at 120° C. may be 10,000 Pa·s or less, 8,000 Pa·s or less, or 6,000 Pa·s or less. Here, when the adherend 30 is a silver-plated copper lead frame, a chip mounting area is formed by silver plating in a shape that protrudes from the surface of a metal substrate made of copper, and thus unevenness may be formed on the surface of the metal substrate. Since the upper limit of the melt viscosity at 120°C is the above-mentioned value, the die bond film 10 can easily follow the unevenness formed on the surface of the metal substrate provided with the silver-plated copper lead frame.

[0033] The above melt viscosity can be increased, for example, by increasing the content ratio of the filler in the die bond film 10 or by increasing the molecular weight of the thermoplastic resin. On the other hand, the above melt viscosity can be decreased, for example, by decreasing the content ratio of the filler in the die bond film 10 or by decreasing the molecular weight of the thermoplastic resin.

[0034] The melt viscosity at 120° C. can be measured by a parallel plate method using a rheometer ("HAAKE MARSIII" manufactured by Themo Fisher Scientific). Specifically, the measurement can be performed according to the following procedure. (1) A test piece is sandwiched between a hot plate for heating and a parallel plate (diameter 8 mm) arranged parallel to the hot plate. The test piece is a die bond film with a thickness of 300 μm punched into a circular shape with a punch with a diameter of 8 mm. The gap between the plates is 250 μm. (2) The melt viscosity of the test piece at 120° C. is measured under conditions of a heating rate of 10° C. / min, a frequency of 1 Hz, a strain amount of 10%, and a temperature range of 75 to 150° C. Specifically, the melt viscosity at 120° C. can be obtained by reading the value at 120° C.

[0035] As described above, the die bond film 10 according to this embodiment contains a thermosetting resin as an organic component. That is, the die bond film 10 according to this embodiment contains a thermosetting resin, and thus has a property of being thermally cured.

[0036] In the die-bonding film 10 according to this embodiment, the proportion of the thermosetting resin in the total mass of the organic components is preferably 20% by mass or more, more preferably 30% by mass or more, even more preferably 40% by mass or more, even more preferably 50% by mass or more, even more preferably 60% by mass or more, and even more preferably 60% by mass or more. Furthermore, the proportion of the thermosetting resin in the total mass of the organic components is preferably 95 mass % or less, more preferably 90 mass % or less, and even more preferably 85 mass % or less.

[0037] Examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. Among these, the thermosetting resin is preferably at least one of the epoxy resin and the phenol resin. It is more preferable that the thermosetting resin contains both the epoxy resin and the phenol resin. That is, it is more preferable that the die bond film 10 according to the present embodiment contains the epoxy resin and the phenol resin as the thermosetting resin.

[0038] Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin, and glycidylamine type epoxy resin.

[0039] The epoxy resin preferably has an epoxy equivalent of 230 g / eq or less, more preferably has an epoxy equivalent of 200 g / eq or less, even more preferably has an epoxy equivalent of 180 g / eq or less, and even more preferably has an epoxy equivalent of 170 g / eq or less. Since the upper limit of the epoxy equivalent is the above-mentioned value, the epoxy resin has a relatively large number of epoxy groups in its structure. As a result, the die bond film 10 shows a relatively high crosslink density after thermal curing. As a result, the occurrence of violent vibrations in the semiconductor chip 20 due to the ultrasonic waves irradiated during ultrasonic bonding can be more sufficiently suppressed. In addition, the epoxy resin may have an epoxy equivalent of 100 g / eq or more, may have an epoxy equivalent of 120 g / eq or more, or may have an epoxy equivalent of 150 g / eq or more. The epoxy equivalent of the epoxy resin can be determined in accordance with JIS K 7236:2009.

[0040] Examples of the phenol resin include novolac-type phenol resin, resol-type phenol resin, and polyoxystyrene such as polyparaoxystyrene. When the phenol resin and the epoxy resin are used in combination, the phenol resin also functions as a curing agent for the epoxy resin.

[0041] The phenolic resin preferably has a hydroxyl equivalent of 170 g / eq or less, more preferably has a hydroxyl equivalent of 150 g / eq or less, and even more preferably has a hydroxyl equivalent of 130 g / eq or less. Since the upper limit of the hydroxyl equivalent is the above-mentioned value, the phenol resin has a relatively large number of hydroxyl groups in its structure. As a result, the die bond film 10 shows a relatively high crosslink density after thermal curing. As a result, the occurrence of violent vibrations in the semiconductor chip 20 due to the ultrasonic waves irradiated during ultrasonic bonding can be more sufficiently suppressed. The phenol resin may have a hydroxyl equivalent of 80 g / eq or more, may have a hydroxyl equivalent of 90 g / eq or more, or may have a hydroxyl equivalent of 100 g / eq or more. The hydroxyl equivalent of the phenol resin can be determined in accordance with JIS K 0070:1992.

[0042] When the epoxy resin and the phenol resin are used in combination, the mass ratio of the epoxy resin to 100 parts by mass of the epoxy resin and the phenol resin in total is preferably 40 parts by mass or more, more preferably 50 parts by mass or more, and even more preferably 60 parts by mass or more. The mass ratio of the epoxy resin may be 90 parts by mass or less, 80 parts by mass or less, or 70 parts by mass or less.

[0043] The die bond film 10 according to the present embodiment may contain a thermosetting catalyst (curing accelerator) from the viewpoint of sufficiently promoting the curing reaction of the thermosetting resin and increasing the curing reaction rate. Examples of the thermosetting catalyst include an imidazole-based compound, a triphenylphosphine-based compound, an amine-based compound, and a trihalogen borane-based compound.

[0044] The die bond film 10 according to the present embodiment may contain an acrylic polymer as the organic component. The acrylic polymer has properties of having few ionic impurities and high heat resistance. Therefore, by including the acrylic polymer in the die bond film 10, the die bond film 10 can have sufficient connection reliability with respect to an adherend such as the semiconductor chip 20 or the lead frame. The acrylic polymer is classified as a thermoplastic resin and functions as a binder.

[0045] The acrylic polymer is preferably a polymer containing, as monomer units, monomer units derived from a (meth)acrylic acid ester in the largest proportion by mass. Examples of the (meth)acrylic acid ester include a chain alkyl (meth)acrylic acid ester, a cycloalkyl (meth)acrylic acid ester, and an aryl (meth)acrylic acid ester. The acrylic polymer may contain monomer units derived from other components copolymerizable with the (meth)acrylic acid ester, such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile, and other various functional group-containing monomers (including polyfunctional monomers). In the die-bonding film 10 according to this embodiment, the acrylic polymer is preferably a copolymer of acrylic acid (AA), acrylonitrile (AN), butyl acrylate (BA), and ethyl acrylate (EA). The acrylic polymers may be used alone or in combination of two or more.

[0046] In the die-bonding film 10 according to this embodiment, the proportion of the acrylic polymer in the total mass of the organic components is preferably 15 mass % or more and 55 mass % or less. When the ratio of the acrylic polymer is within the above numerical range, in the die bond film, it becomes easy to adjust the melt viscosity value at 120°C and also easy to adjust the storage modulus at 150°C. The proportion of the acrylic polymer in the total mass of the organic components may be 20% by mass or more, or may be 25% by mass or more. Furthermore, the proportion of the acrylic polymer in the total mass of the organic components may be 50% by mass or less, 45% by mass or less, 40% by mass or less, or 35% by mass or less.

[0047] The acrylic polymer preferably has an acid value of 0.1 mgKOH / g or more. The acrylic polymer more preferably has an acid value of 1.0 mgKOH / g or more, and further preferably has an acid value of 5.0 mgKOH / g or more. The acrylic polymer may have an acid value of 35 mgKOH / g or less, may have an acid value of 25 mgKOH / g or less, or may have an acid value of 15 mgKOH / g or less.

[0048] The acid value of the acrylic polymer can be measured as follows. (1) Accurately weigh out approximately 10 g of acrylic polymer into a 100 mL conical flask. (2) Toluene is added to a 100 mL conical flask to dissolve or suspend the acrylic polymer, thereby obtaining an acrylic polymer-containing liquid. (3) After adding 5 drops of phenolphthalein indicator to the acrylic polymer-containing liquid, titration is performed with 0.1 mol / L ethanolic potassium hydroxide solution (an ethanol solution in which potassium hydroxide is dissolved at a concentration of 0.1 mol / L) to determine the titration amount A. (4) A blank solution, i.e., toluene in which no acrylic polymer is dissolved or suspended, is also titrated with 0.1 mol / L ethanolic potassium hydroxide solution to determine the titer B. (5) Calculate the acid value using the following formula. Calculation formula: Acid value = ((AB) x F x 0.1 x 56.1) / (W x N) x 100 A, B, F, W, and N are as follows: A: The amount (mL) of 0.1 mol / L ethanolic potassium hydroxide solution required to titrate the acrylic polymer-containing solution B: The amount (mL) of 0.1 mol / L ethanolic potassium hydroxide solution required to titrate the blank solution F: Factor of 0.1 mol / L ethanolic potassium hydroxide solution W: Mass of precisely weighed acrylic polymer (g) N: Solid content (%)

[0049] The acrylic polymer preferably has a mass average molecular weight Mw of 1.4 million or less, and has a functional group capable of reacting with at least one of the epoxy resin and the phenol resin.

[0050] The mass average molecular weight Mw of the acrylic polymer is preferably 1.3 million or less, and more preferably 1.2 million or less. The mass average molecular weight Mw of the acrylic polymer is preferably 20,000 or more, more preferably 40,000 or more, and even more preferably 100,000 or more.

[0051] The mass average molecular weight Mw of the acrylic polymer can be measured by GPC under the following conditions. Measuring device: Waster, model "Alliance GPC 2000" Column: Two TSKgel GMH6-HT (Tosoh Corporation) columns connected in series, with two TSKgel GMH-HTL columns connected in series downstream. Column size: Both TSKgel GMH6-HT and TSKgel GMH-HTL are 7.5mm inner diameter x 300mm length Column temperature: 140℃ ·Flow rate: 1.0mL / min Eluent: o-dichlorobenzene Sample preparation concentration: 0.10% by mass (dissolved in o-dichlorobenzene) Sample injection volume: 40μL Detector: RI (differential refractometer) Standard sample: polystyrene

[0052] The functional group of the acrylic polymer may be, for example, a carboxy group. The carboxy group is a functional group capable of reacting with a glycidyl group (epoxy group) of the epoxy resin, and is also a functional group capable of reacting with a hydroxyl group of the phenol resin. That is, the carboxy group is a functional group capable of reacting with the epoxy resin and the phenol resin. In this specification, the functional group capable of reacting with at least one of the epoxy resin and the phenol resin means the carboxy group, glycidyl group, or the like.

[0053] The die-bonding film 10 according to the present embodiment may contain a thermoplastic resin other than the acrylic polymer. Examples of thermoplastic resins other than the acrylic polymers include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as polyamide 6 or polyamide 6,6, phenoxy resin, acrylic polymer, saturated polyester resin such as PET or PBT, polyamideimide resin, and fluororesin. The thermoplastic resins may be used alone or in combination of two or more.

[0054] The resin composition preferably contains 3 parts by mass or more and 80 parts by mass or less of the acrylic polymer with respect to 100 parts by mass in total of the thermosetting resin and the thermoplastic resin. The resin composition may contain 5 parts by mass or more, 10 parts by mass or more, or 20 parts by mass or more of the acrylic polymer per 100 parts by mass in total of the thermosetting resin and the thermoplastic resin. In addition, the resin composition may contain 70 parts by mass or less, 60 parts by mass or less, or 50 parts by mass or less of the acrylic polymer per 100 parts by mass of the thermosetting resin and the thermoplastic resin combined.

[0055] The die bond film 10 according to the present embodiment may contain an inorganic filler as an inorganic component. Examples of the inorganic filler include fillers containing aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride, silica such as crystalline silica or amorphous silica, and the like. Examples of the material of the inorganic filler include simple metals such as aluminum, gold, silver, and nickel, and alloys thereof. The inorganic filler may be aluminum borate whisker, amorphous carbon black, graphite, or the like. Among the above-mentioned various fillers, it is preferable to use a silica filler composed of silica. The silica filler may have a surface treated with a silane coupling agent such as epoxy silane. The inorganic filler may have various shapes such as a spherical shape, a needle shape, a flake shape, etc. Among these various shapes, a spherical shape is preferable. The inorganic fillers may be used alone or in combination of two or more.

[0056] In the die bond film 10, the proportion of the inorganic filler in the total mass of the organic component and the inorganic component is preferably 30 mass % or more and 60 mass % or less. When the proportion of the inorganic filler is within the above numerical range, the storage modulus at 150° C. in the die bond film 10 becomes easy to adjust. The proportion of the inorganic filler in the total mass of the organic component and the inorganic component is more preferably 35 mass % or more, and further preferably 40 mass % or more. Moreover, the proportion of the inorganic filler in the total mass of the organic component and the inorganic component is more preferably 55 mass % or less, and further preferably 50 mass % or less.

[0057] The average particle size of the inorganic filler is preferably 0.005 μm (5 nm) or more and 10 μm (10,000 nm) or less, and more preferably 0.005 μm (5 nm) or more and 1 μm (1,000 nm) or less. When the inorganic filler has an average particle size of 0.005 μm or more, the wettability and adhesiveness to an adherend such as a semiconductor wafer or a semiconductor chip can be further improved. Furthermore, by making the average particle diameter of the inorganic filler 10 μm or less, the properties of the contained filler can be exhibited more fully, and in addition, the heat resistance of the die bond film 10 can be further exhibited.

[0058] The average particle size of the inorganic filler can be measured by dynamic light scattering (DLS). Specifically, the inorganic filler is dispersed in methyl ethyl ketone (MEK) so that the solid content concentration is 1% by mass or less to prepare a sample for particle size measurement, and the average particle size of the inorganic filler in the sample for particle size measurement is measured using a dynamic light scattering photometer (model number "ZEN3600" manufactured by CIMEX Corporation). The sample for particle size measurement may be treated with an ultrasonic homogenizer for 2 minutes before measurement.

[0059] The die bond film 10 according to this embodiment preferably has a glass transition temperature Tg of 140° C. or higher after thermal curing. When the glass transition temperature Tg after thermal curing is 140° C. or higher, the connection reliability of the die bond film 10 to the adherend 30 such as a lead frame can be improved. The glass transition temperature Tg of the die bond film 10 after thermal curing is more preferably 150° C. or higher, and further preferably 160° C. or higher. Moreover, the glass transition temperature Tg of the die bond film 10 after thermal curing may be 210° C. or lower, 200° C. or lower, or 190° C. or lower. The glass transition temperature Tg of the die bond film 10 after thermal curing can be determined using a solid viscoelasticity measuring device (for example, Model RSAIII, manufactured by Rheometric Scientific). The measurement using the solid viscoelasticity measuring device can be carried out in the same manner as the measurement of the storage modulus described above. The temperature corresponding to the peak top temperature of the loss tangent tan δ (loss modulus / storage modulus) obtained in the above measurement is determined as the glass transition temperature Tg. As described above, since the measurement is carried out using the solid viscoelasticity measuring device after the heat curing treatment, the determined glass transition temperature Tg is the glass transition temperature Tg after heat curing. It becomes.

[0060] The above glass transition temperature Tg can be made higher by, for example, increasing the crosslink density after curing of the thermosetting resin in the die bond film 10. For example, the above glass transition temperature Tg can be made higher by increasing the ratio of glycidyl groups in the epoxy resin or increasing the ratio of hydroxyl groups in the phenol resin.

[0061] The thickness of the die bond film 10 is not particularly limited, but is, for example, 1 μm or more and 200 μm or less. Such a thickness may be 3 μm or more and 150 μm or less, or 5 μm or more and 100 μm or less. The thickness of the die bond film 10 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[0062] The die bond film 10 can be obtained by dissolving or suspending a resin composition containing the above-mentioned components in an organic solvent (e.g., methyl ethyl ketone (MEK)) to obtain an adhesive composition, applying the adhesive composition to the surface of a resin film or the like using an applicator or the like, and then drying the adhesive composition after application. In addition, the resin film is preferably a release film (release liner) having at least one surface subjected to a release treatment, and when the release film is used as the resin film, it is preferable to apply the adhesive composition to the release-treated surface.

[0063] [Dicing die bond film] As shown in FIG. 3, the dicing die bond film 50 of this embodiment comprises a dicing tape 40 in which an adhesive layer 2 is laminated on a base layer 1, and a die bond film 10 laminated on the adhesive layer 2 with a portion of the adhesive layer 2 exposed. In the dicing die bond film 50 according to this embodiment, as the die bond film 10, the die bond film 10 according to this embodiment is used. In the dicing die bond film 50, a semiconductor wafer is attached onto the die bond film 10. When a semiconductor wafer is cut using the dicing die bond film 50, the die bond film 10 is also cut together with the semiconductor wafer. The die bond film 10 is cut into pieces of a size corresponding to the size of each of the individual semiconductor chips, as shown in Fig. 2. This allows the individual semiconductor chips with the die bond film 10 to be obtained.

[0064] The base layer 1 supports the pressure-sensitive adhesive layer 2. The base layer 1 is made of a metal foil, a fiber sheet, a rubber sheet, a resin film, or the like.

[0065] The base layer 1 is preferably made of a resin film. The base layer 1 may have a single layer structure or a laminate structure.

[0066] The fiber sheet is made of, for example, paper, woven fabric, or nonwoven fabric.

[0067] Examples of materials for the resin film include polyolefins such as polyethylene, polypropylene, and ethylene-propylene copolymers; ethylene copolymers such as ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester random copolymers, and ethylene-(meth)acrylic acid ester alternating copolymers; polyesters such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; polyacrylates; polyvinyl chloride (PVC); polyurethanes; polycarbonates; polyphenylene sulfide; polyamides such as aliphatic polyamides and fully aromatic polyamides (aramids); polyether ether ketones; polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile-butadiene-styrene copolymers); cellulose or cellulose derivatives; silicone-containing polymers; and fluorine-containing polymers. These may be used alone or in combination of two or more.

[0068] When the base layer 1 is made of a resin film, the base layer 1 may be obtained by non-stretch molding or by stretch molding, but is preferably obtained by stretch molding.

[0069] The surface of the base layer 1 on which the pressure-sensitive adhesive layer 2 is laminated (hereinafter also simply referred to as the surface) may be subjected to a surface treatment in order to enhance adhesion to the pressure-sensitive adhesive layer 2. The surface treatment may be a chemical or physical oxidation treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage shock exposure, or ionizing radiation treatment. Furthermore, as a surface treatment, a coating treatment using a coating agent such as an anchor coating agent, a primer, or an adhesive may be performed.

[0070] The surface of the base material layer 1 on which the adhesive layer 2 is not laminated (hereinafter also referred to simply as the back surface) may be coated with a release agent (release agent) such as a silicone resin or a fluororesin in order to improve releasability.

[0071] The thickness of the base layer 1 is preferably 55 μm or more and 195 μm or less, more preferably 55 μm or more and 190 μm or less, even more preferably 55 μm or more and 170 μm or less, and optimally 60 μm or more and 160 μm or less. By having the thickness of the base layer 1 within the above range, the dicing tape 40 can be produced efficiently. Moreover, the die bond film 10 of the dicing die bond film 50 can be efficiently cut. The thickness of the base layer 1 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[0072] In the dicing die bond film 50 according to this embodiment, the pressure-sensitive adhesive layer 2 has adhesiveness and can hold the die bond film 10 by adhering to the die bond film 10. The pressure-sensitive adhesive layer 2 contains an adhesive and therefore exhibits the above-mentioned adhesiveness.

[0073] The adhesive may be an adhesive whose adhesive strength can be reduced by an external action during use of the dicing die bond film 50 (hereinafter, referred to as an adhesive reduction type adhesive).

[0074] When a reduced-adhesion adhesive is used as the adhesive, the adhesive layer 2 can be used in a state where it exhibits a relatively high adhesive strength (hereinafter referred to as a high-adhesion state) and a state where it exhibits a relatively low adhesive strength (hereinafter referred to as a low-adhesion state) during the use of the dicing die bond film 50. For example, when a semiconductor wafer attached to the die bond film 10 of the dicing die bond film 50 is cut, the high-adhesion state is used to prevent a plurality of semiconductor chips, which are cut into individual pieces by cutting the semiconductor wafer, from lifting up or peeling off from the adhesive layer 2. In response to this, the low adhesive state is utilized in order to make it easier to pick up a plurality of individual semiconductor chips from the adhesive layer 2 after the semiconductor wafer is cleaved.

[0075] The tack-reducing adhesive may be, for example, an adhesive (hereinafter, referred to as an active energy ray curable adhesive) that can be cured by irradiation with active energy rays during use of the dicing die bond film 50. That is, the tack-reducing adhesive contains a curing component that is cured by irradiation with active energy rays.

[0076] Examples of the active energy ray-curable adhesive include adhesives that are cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X-rays. Among these, it is preferable to use an adhesive that is cured by irradiation with ultraviolet rays (ultraviolet ray-curable adhesive).

[0077] Examples of the active energy ray-curable adhesive include additive-type active energy ray-curable adhesives that contain a base polymer as a main component and an active energy ray-polymerizable monomer component or oligomer component having a functional group such as an active energy ray-polymerizable carbon-carbon double bond. As the base polymer, an acrylic polymer is preferably used. The base polymer may be one in which a polymerization reaction proceeds upon irradiation with active energy rays, causing cross-linking between molecules, thereby reducing the adhesive strength of the adhesive layer 2.

[0078] The acrylic polymer includes a monomer unit derived from a (meth)acrylic acid ester, such as a (meth)acrylic acid chain alkyl ester, a (meth)acrylic acid cycloalkyl ester, and a (meth)acrylic acid aryl ester. As the monomer unit derived from the (meth)acrylic acid ester, for example, 2-hydroxyethyl acrylate (HEA), ethyl acrylate (EA), butyl acrylate (BA), 2-ethylhexyl acrylate (2EHA), isononyl acrylate (iNA), lauryl acrylate (LA), 4-acryloylmorpholine (AMCO), 2-isocyanatoethyl methacrylate (MOI), etc. are preferably used. The monomer units derived from the (meth)acrylic acid ester may be used alone or in combination of two or more kinds. The acrylic polymer preferably contains, as the monomer units derived from the (meth)acrylic acid ester, the monomer units of 2-ethylhexyl acrylate (2EHA), 2-hydroxyethyl acrylate (HEA), and 2-isocyanatoethyl methacrylate (MOI). In addition, the acrylic polymer may contain, as a monomer unit derived from the (meth)acrylic acid ester, in addition to the monomer units of 2EHA, HEA, and MOI, the monomer units of lauryl acrylate (LA) or isononyl acrylate (iNA).

[0079] The pressure-sensitive adhesive layer 2 may contain an external crosslinking agent. There are no particular limitations on the external crosslinking agent as long as it can react with a base polymer (for example, an acrylic polymer) to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

[0080] Examples of the active energy ray-polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the active energy ray-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, polybutadiene-based, etc. The content of the active energy ray-polymerizable monomer component or active energy ray-polymerizable oligomer component in the active energy ray-curable adhesive is selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

[0081] The active energy ray-curable adhesive preferably contains a photopolymerization initiator, such as an azo compound, an α-ketol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonyl chloride compound, a photoactive oxime compound, a benzophenone compound, a thioxanthone compound, camphorquinone, a halogenated ketone, an acylphosphinoxide, or an acylphosphonate. An example of the azo compound is azobisisobutyronitrile (AIBN).

[0082] When the pressure-sensitive adhesive layer 2 contains an external crosslinking agent, the pressure-sensitive adhesive layer 2 preferably contains the external crosslinking agent in an amount of 0.1% by mass or more and 3% by mass or less. When the pressure-sensitive adhesive layer 2 contains a photopolymerization initiator, the pressure-sensitive adhesive layer 2 preferably contains 0.1% by mass or more and 10% by mass or less of the photopolymerization initiator.

[0083] The pressure-sensitive adhesive layer 2 may contain, in addition to the above-mentioned components, a crosslinking accelerator, a tackifier, an antiaging agent, a colorant such as a pigment or a dye, and the like.

[0084] The thickness of the pressure-sensitive adhesive layer 2 is preferably from 1 μm to 50 μm, more preferably from 2 μm to 45 μm, and even more preferably from 5 μm to 40 μm. The thickness of the adhesive layer 2 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[0085] The adhesive layer 2 can be obtained by applying an adhesive composition containing the above-mentioned components to the surface of a resin film or the like using an applicator or the like, and then drying the applied adhesive composition.

[0086] The peeling force between the die bond film 10 and the adhesive layer 2 of the dicing tape 40 is preferably 0.10 [N / 20 mm] or more, more preferably greater than 0.10 [N / 20 mm], and even more preferably 0.15 [N / 20 mm] or more. By increasing the peeling force, the phenomenon (chip jump) in which the individualized semiconductor chip with the die bond film flies away from the adhesive layer in the dicing process described later in detail can be suppressed. The peeling force is preferably 0.35 [N / 20 mm] or less, and more preferably 0.30 [N / 20 mm] or less. By decreasing the peeling force, the individualized semiconductor chip with the die bond film can be picked up more reliably in the pick-up process described later in detail. In addition, when the adhesive layer 2 contains the above-mentioned active energy ray curable adhesive, the above peel strength is obtained after sufficient irradiation with active energy rays (for example, 300 mJ / cm 2 This refers to the peel strength between the pressure-sensitive adhesive layer 2 and the die-bonding film 10 when ultraviolet rays are irradiated at an intensity of 100 nm.

[0087] The peel strength is measured by carrying out a T-peel test at a peel speed of 300 mm / min at 23° C. The peel angle during the test is 90 degrees.

[0088] In the above, the adhesive (reduced adhesive) whose adhesive strength can be reduced by an external action during the use of the dicing die bond film 50 has been described, but the adhesive is not limited to such an adhesive. The adhesive may be a pressure-sensitive adhesive that is not cured by irradiation with active energy rays.

[0089] Moreover, the attachment of the die-bonding film 10 to the pressure-sensitive adhesive layer 2 can be carried out by laminating the pressure-sensitive adhesive layer 2 produced as described above and the die-bonding film 10 together. After laminating the die-bonding film 10 with the resin film attached to one side thereof and the pressure-sensitive adhesive layer 2, the resin film may be peeled off from one side of the die-bonding film 10.

[0090] The dicing die bond film 50 according to this embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. Specific examples of the use of the dicing die bond film 50 will be described below.

[0091] In the following, an example will be described in which a dicing die bond film 50 having a single base layer 1 is used.

[0092] The method for manufacturing a semiconductor integrated circuit includes, for example, a half-cut process for forming grooves in a semiconductor wafer to process the semiconductor wafer into chips (dies) by a fracturing process, a back-grind process for grinding the semiconductor wafer after the half-cut process to reduce its thickness, a mounting process for attaching one side (for example, the side opposite to the circuit side) of the semiconductor wafer after the back-grind process to a die-bonding film 10 and fixing the semiconductor wafer to the dicing tape 40, an expanding process for expanding the gap between the semiconductor chips, a kerf maintaining process for maintaining the gap between the semiconductor chips, a pick-up process for peeling off the space between the die-bonding film 10 and the adhesive layer 2 to take out the semiconductor chip (die) with the die-bonding film 10 attached, and a die-bonding process for bonding the semiconductor chip (die) with the die-bonding film 10 attached to an adherend. When carrying out these processes, the dicing tape (dicing die-bonding film) of this embodiment is used as a manufacturing auxiliary tool.

[0093] In the half-cut process, as shown in FIG. 4A and FIG. 4B, a half-cut process is performed to cut a semiconductor integrated circuit into small pieces (dies). More specifically, a wafer processing tape T is attached to the surface of the semiconductor wafer W opposite to the circuit surface, and a dicing ring R is attached to the wafer processing tape T (see FIG. 4A). With the wafer processing tape T attached, a groove for division is formed (see FIG. 4B). In the back-grind process, as shown in FIG. 4C and FIG. 4D, the semiconductor wafer is ground to reduce its thickness. More specifically, a back-grind tape G is attached to the surface where the groove is formed, while the wafer processing tape T attached initially is peeled off (see FIG. 4C). With the back-grind tape G attached, the semiconductor wafer W is ground until it reaches a predetermined thickness (see FIG. 4D).

[0094] 5A and 5B, in the mounting step, after a dicing ring R is attached to the adhesive layer 2 of the dicing tape 40, a half-cut semiconductor wafer W is attached to the exposed surface of the die bond film 10 (see FIG. 5A). Then, the backgrind tape G is peeled off from the semiconductor wafer W (see FIG. 5B).

[0095] In the expanding step, as shown in Figs. 6A to 6C, the dicing ring R is fixed to a holder H of an expanding device. The dicing die bond film 50 is pushed up from below by a push-up member U provided in the expanding device, so that the dicing die bond film 50 is stretched so as to be expanded in the planar direction (see Fig. 6B). As a result, the half-cut semiconductor wafer W is cleaved under specific temperature conditions. The above temperature conditions are, for example, -20°C to 5°C, preferably -15°C to 0°C, and more preferably -10°C to -5°C. The expanded state is released by lowering the push-up member U (see Fig. 6C). 7A to 7B, in the expanding step, the dicing tape 40 is stretched so as to expand its area under a higher temperature condition (for example, room temperature (23±2° C.)), thereby separating adjacent cleaved semiconductor chips in the planar direction of the film surface, and further increasing the gap between them.

[0096] In the kerf maintaining process, as shown in FIG. 8, hot air (e.g., 100°C to 130°C, shown by the dashed arrow) is applied to the dicing tape 40 to thermally shrink the dicing tape 40, and then the dicing tape 40 is cooled and solidified, thereby maintaining the distance (kerf) between adjacent cleaved semiconductor chips.

[0097] 9, in the pick-up process, the semiconductor chip to which the die bond film 10 is attached is peeled off from the adhesive layer 2 of the dicing tape 40. In detail, the pin member P is raised to push up the semiconductor chip to be picked up through the dicing tape 40. The pushed-up semiconductor chip is held by the suction jig J.

[0098] In the die bonding step, the semiconductor chip with the die bond film 10 attached thereto is bonded to an adherend.

[0099] A method for manufacturing a semiconductor integrated circuit may include, for example, a mounting step of attaching a semiconductor wafer to the die bond film 10 of the dicing die bond film 50 and fixing the semiconductor wafer to the dicing die bond film 50; a dicing step of dicing the semiconductor wafer fixed to the dicing die bond film 50 to obtain a plurality of semiconductor chips (dies); a pick-up step of peeling between the die bond film 10 and the adhesive layer 2 to remove the semiconductor chip (die) with the die bond film 10 attached; and a die bond step of adhering the semiconductor chip (die) with the die bond film 10 attached to an adherend. When carrying out each of these steps, the dicing die bond film 50 according to this embodiment is used as a manufacturing aid.

[0100] In the mounting step, as shown in FIG. 10, a semiconductor wafer W is fixed to a dicing die bond film 50 placed on a table TA of a dicing machine. More specifically, after the dicing die bond film 50 is placed on the table TA so that the base layer 1 is in contact with the table TA, the semiconductor wafer W is attached to the die bond film 10 of the dicing die bond film 50.

[0101] In the dicing step, as shown in FIG. 11, a dicing blade DB of a dicing device is used to dices the semiconductor wafer W into a plurality of semiconductor chips (dies) 20 having predetermined dimensions. More specifically, the semiconductor wafer W is diced into a lattice pattern using a dicing blade DB so as to obtain a plurality of semiconductor chips (dies) 20 having approximately the same dimensions in a plan view. After the dicing step and before the pick-up step, a cleaning step may be performed in which the semiconductor chip (die) 20 side is cleaned with a cleaning liquid such as water.

[0102] 12, in the pick-up process, the semiconductor chip (die) 20 with the die bond film 10 attached thereto is peeled off from the adhesive layer 2 of the dicing die bond film 50. In detail, the pin member P is raised to push up the semiconductor chip (die) 20 to be picked up through the dicing die bond film 50. The pushed-up semiconductor chip (die) 20 is held by the suction jig J. When the pressure-sensitive adhesive layer 2 contains an active energy ray-curable pressure-sensitive adhesive, it is preferable to irradiate with active energy rays such as radiation. The intensity of the irradiated active energy rays is appropriately selected depending on the type of active energy ray-curable pressure-sensitive adhesive, etc. This allows the affinity between the pressure-sensitive adhesive layer 2 and the die bond film 10 to be relatively low, making it easier to collect the semiconductor chip (die) 20 with the die bond film 10 attached. The pick-up step is performed by using, for example, a die bonder. In FIG. 12, the member indicated by the symbol U is a push-up member of the die bonder, the member indicated by the symbol R is a dicing ring, and the member indicated by the symbol H is a holder of the die bonder.

[0103] In the die bonding step, as shown in FIG. 13, a semiconductor chip (die) 20 with a die bond film 10 attached thereto is bonded to an adherend A using a suction jig J. Specifically, the die bonding step is performed by bringing the die bond film 10 into contact with the adherend A, and then pressing the semiconductor chip (die) 20 from above with a suction jig J. In addition, when the semiconductor chip (die) 20 is attached to the substrate via the die bond film 10, the planar dimensions of the die bond film 10 are approximately the same as the planar dimensions of the semiconductor chip (die) 20 when viewed from above (see Figure 13). The die bonding process is also performed using, for example, a die bonder.

[0104] [Semiconductor Devices] As shown in FIG. 14, the semiconductor device 100 of this embodiment comprises a lead frame 110 having at least one chip mounting area 110a for mounting a semiconductor chip 20, at least one die bond film 10 attached to the at least one chip mounting area 110a, and at least one semiconductor chip 20 attached to one side of the at least one die bond film 10. In the semiconductor device 100 according to this embodiment, the die bond film 10 contains a thermosetting resin as an organic component, as described above. In addition, the die bond film 10 has a storage modulus of 200 MPa or more at 150°C after thermal curing. Furthermore, the die bond film 10 has a shear adhesive strength to a silver-plated copper lead frame of 3 MPa or more at 260°C after being exposed to an environment of a temperature of 85°C and a relative humidity of 60%RH for 168 hours in a state where the die bond film 10 is attached to the silver-plated copper lead frame.

[0105] In the semiconductor device 100 according to this embodiment, as shown in FIG. 14, the lead frame 110 has a metal substrate 110b, and at least one chip mounting region 110a is disposed on one surface of the metal substrate 110b. Furthermore, in the semiconductor device 100 according to this embodiment, the lead frame 110 has at least one lead terminal 110c formed on one surface of the metal substrate 110b so as to surround each of the at least one chip mounting region 110a. Furthermore, in the semiconductor device 100 according to this embodiment, at least one semiconductor chip 20 and the lead terminal 110c are connected via a bonding wire . In the semiconductor device 100 according to this embodiment, the semiconductor chip 20 arranged in the chip mounting region 110 a of the lead frame 110 is entirely embedded in the molding resin 120 .

[0106] The matters disclosed in this specification include the following.

[0107] (1) A die bond film containing a thermosetting resin as an organic component, After heat curing, the storage modulus at 150°C is 200 MPa or more, When attached to a silver-plated copper lead frame, the shear adhesive strength to the silver-plated copper lead frame at 260°C is 3 MPa or more after being exposed to an environment of 85°C and 60% RH for 168 hours. Die bond film.

[0108] (2) The melt viscosity at 120°C is 100 Pa·s or more. The die bond film according to (1) above.

[0109] (3) The organic component further includes an acrylic polymer, The proportion of the acrylic polymer in the total mass of the organic components is 15% by mass or more and 55% by mass or less. The die-bonding film according to (1) or (2) above.

[0110] (4) The acrylic polymer has an acid value of 0.1 mgKOH / g or more. The die bond film according to (3) above.

[0111] (5) Further comprising an inorganic filler as an inorganic component, The proportion of the inorganic filler in the total mass of the organic component and the inorganic component is 30% by mass or more and 60% by mass or less. The die-bonding film according to any one of (1) to (4) above.

[0112] (6) The thermosetting resin includes an epoxy resin and a phenol resin, The epoxy resin has an epoxy equivalent weight of 170 g / eq or less, The phenolic resin has a hydroxyl equivalent of 170 g / eq or less. The die-bonding film according to any one of (1) to (5) above.

[0113] (7) The glass transition temperature Tg after heat curing is 140°C or higher. The die-bonding film according to any one of (1) to (6) above.

[0114] (8) Used to attach semiconductor chips to silver-plated copper lead frames. The die-bonding film according to any one of (1) to (7) above.

[0115] (9) a lead frame having at least one chip mounting area for mounting a semiconductor chip; At least one die bond film attached to at least one of the chip mounting areas; At least one semiconductor chip attached to at least one of the die bond films; The die bond film is the die bond film according to any one of (1) to (7) above, the lead frame is a silver-plated copper lead frame; Semiconductor device.

[0116] The die bond film and the semiconductor device according to the present invention are not limited to the above-mentioned embodiment. The die bond film and the semiconductor device according to the present invention are not limited by the above-mentioned action and effect. The die bond film and the semiconductor device according to the present invention can be modified in various ways without departing from the gist of the present invention. EXAMPLES

[0117] The present invention will now be described in more detail with reference to examples. The following examples are provided to further explain the present invention in detail, and are not intended to limit the scope of the present invention.

[0118] Details of each component used to obtain the die bond film and shown in Table 1 are as follows. organic ingredients <Acrylic polymer> First acrylic polymer Nagase ChemteX Corporation's product name "SG-708-6" (mass average molecular weight 700,000, acid value 9 mgKOH / g) Second acrylic polymer Taisei Fine Chemical Co., Ltd. product name "1HM-2045" (mass average molecular weight 130,000, acid value 1.8 mgKOH / g) Tertiary acrylic polymer Nagase Chemitex Corporation's product name "SG-70L" (mass average molecular weight 900,000, acid value 5 mgKOH / g) Quaternary acrylic polymer Nagase Chemitex Corporation's product name "SG-N50" (mass average molecular weight 400,000, acid value 35 mgKOH / g) Fifth acrylic polymer Negami Chemical Industries' product name "AC-019" (mass average molecular weight 1.1 million, acid value 0 mgKOH / g) <Epoxy resin> ·First epoxy resin Nippon Kayaku Co., Ltd. product name "EPPN-501HY" (multifunctional epoxy resin, epoxy equivalent 163-175g / eq) Second epoxy resin Mitsubishi Chemical Corporation's product name "JER (registered trademark) 828" (epoxy equivalent: 184-194g / eq) ·Third epoxy resin Mitsubishi Chemical Corporation's product name: "JER (registered trademark) YL980" (epoxy equivalent: 180-190g / eq) ·Fourth epoxy resin DIC Corporation's product name "EPICLON (registered trademark) N-665-EXP-S" (cresol novolac type epoxy resin, epoxy equivalent 200-210g / eq) 5th Epoxy Resin DIC Corporation's product name "EPICLON (registered trademark) HP-7200L" (epoxy equivalent: 230-260g / eq) <Phenol resin> No. 1 phenolic resin Gun-ei Chemical Industry Co., Ltd.'s product name "LVR-8210DL" (novolac type phenolic resin, hydroxyl equivalent 104g / eq) Secondary phenolic resin Arakawa Chemical's product name "P-180" (hydroxyl equivalent: 105g / eq) Tertiary phenolic resin Product name "MEH-8005" (hydroxyl equivalent: 135g / eq) manufactured by Meiwa Kasei Co., Ltd. -Quaternary phenolic resin Product name "MEHC-7800H" (hydroxyl equivalent: 180g / eq) manufactured by Meiwa Kasei Co., Ltd. No. 5 phenolic resin Product name "MEHC-7851SS" (hydroxyl equivalent: 218g / eq) manufactured by Meiwa Kasei Co., Ltd. Inorganic components <Inorganic filler> First inorganic filler Admatechs' product name "SE-2050MCV" (spherical silica filler, average particle size 0.5 μm) Second inorganic filler Admatechs' product name "SO-25R" (silica filler, average particle size 0.5 μm)

[0119] [Example 1] (Die bond film) According to the compounding ratios shown in Table 1, the organic component (first acrylic polymer, first epoxy resin, and first phenolic resin) and the inorganic component (first inorganic filler) were suspended or dissolved in methyl ethyl ketone to obtain a first adhesive composition. The first adhesive composition was filtered using a 400 mesh (38 μm mesh) twill weave SUS (stainless steel) mesh to obtain a second adhesive composition. The second adhesive composition was then applied to a silicone release-treated surface of a PET separator (50 μm thick) with an applicator to a thickness of 20 μm to form a coating film. The coating film was subjected to a solvent removal treatment at 120° C. for 2 minutes. As a result, a die-bonding film having a thickness (average thickness) of 20 μm was produced on the PET separator, and a die-bonding film with a PET separator according to Example 1 was obtained.

[0120] (Dicing die bond film) <Synthesis of acrylic polymer for adhesive layer> In a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirrer, a mixture containing 98 parts by mole of 2-ethylhexyl acrylate (2EHA), 20 parts by mole of 2-hydroxyethyl acrylate (HEA), benzoyl peroxide as a polymerization initiator, and toluene as a polymerization solvent was stirred at 60°C for 10 hours under a nitrogen atmosphere (polymerization reaction). In this mixture, the content of benzoyl peroxide was 0.4 parts by mass relative to 100 parts by mass of the monomer components, and the content of toluene was 80 parts by mass relative to 100 parts by mass of the monomer components. A first polymer solution containing a first acrylic polymer was obtained by the above polymerization reaction. Next, 16 parts by mole of 2-methacryloyloxyethyl isocyanate (MOI) was added to the first polymer solution, and the mixture was stirred in an air atmosphere at 50° C. for 60 hours (addition reaction). This resulted in a second polymer solution containing a second acrylic polymer having a methacryloyl group on the side chain.

[0121] <Preparation of Pressure-Sensitive Adhesive Composition> To the second polymer solution, 0.05 parts by mass of a crosslinking agent (product name "Coronate L", a polyisocyanate compound, manufactured by Tosoh Corporation) and 2 parts by mass of a first photopolymerization initiator (product name "Irgacure 127", manufactured by BASF) were added per 100 parts by mass of the second acrylic polymer and mixed to obtain a pressure-sensitive adhesive composition.

[0122] <Preparation of dicing tape> The pressure-sensitive adhesive composition was applied using an applicator onto the silicone release-treated surface of a PET separator (thickness: 50 μm) having a silicone release-treated surface, and dried at 120°C for 2 minutes to form a pressure-sensitive adhesive layer with a thickness of 30 μm. Thereafter, an ethylene-vinyl acetate copolymer (EVA) film (product name "ODZ5", thickness 80 μm, manufactured by Okura Industries Co., Ltd.) serving as a base layer was attached to the pressure-sensitive adhesive layer at room temperature. In this manner, the dicing tape according to Example 1 was obtained.

[0123] <Preparation of dicing die bond film> First, the die bond film with the PET separator according to Example 1 was punched out into a circle having a diameter of 330 mm. Next, the PET separator was removed from the dicing tape of Example 1 to expose one side of the adhesive layer, and the exposed surface of the die bond film with the PET separator was laminated on the exposed surface of the adhesive layer at room temperature (23±2°C). Then, a laminate was obtained by laminating the two sheets using a roll laminator, and the laminate was punched out into a circle having a diameter of 370 mm, thereby obtaining the dicing die bond film according to Example 1. That is, the dicing die bond film according to Example 1 was constructed by laminating, in this order, a film made of ethylene-vinyl acetate copolymer (EVA), an adhesive layer, a die bond film, and a PET separator. The lamination using the roll laminator was performed under the conditions of a lamination speed of 10 mm / sec, a temperature of 23±2° C., and a pressure of 0.15 MPa.

[0124] [Examples 2 to 6] (Die bond film) Except for changing the blending ratio of the organic component and the inorganic component as shown in Table 1, the same procedure as in Example 1 was carried out to obtain a die bond film with a PET separator according to each Example. (Dicing die bond film) A dicing die-bonding film according to each Example was obtained in the same manner as in Example 1, except that a die-bonding film with a PET separator according to each Example was used.

[0125] [Comparative Examples 1 to 7] (Die bond film) Except for changing the blending ratio of the organic component and the inorganic component as shown in Table 1, the same procedure as in Example 1 was carried out to obtain die bond films with PET separators according to each comparative example. (Dicing die bond film) Dicing and die-bonding films according to each comparative example were obtained in the same manner as in Example 1, except that the die-bonding films with PET separators according to each comparative example were used.

[0126] [Table 1]

[0127] (Storage modulus at 150℃) For the die bond film according to each example, the storage modulus at 150° C. was measured. The storage modulus at 150° C. was measured according to the procedure described in the Examples section above, and the results are shown in Table 2.

[0128] (shear adhesive strength at 260℃) For the die bond film according to each example, the shear adhesive strength to a silver-plated copper lead frame at 260° C. was measured. The shear adhesion at 260° C. was measured according to the procedure described in the Examples section above, and the results are shown in Table 2. In addition, the shear adhesive strength at 260°C was measured for the laminates of each example in which the die bond film was attached to the chip mounting area (formed by silver plating) of the copper lead frame, even before they were exposed to an environment of a temperature of 85°C and a relative humidity of 60% RH for 168 hours. The results are also shown in Table 2.

[0129] As can be seen from Table 2, the die bond films according to the respective Examples exhibit a high shear adhesive strength value of 3 MPa or more at 260° C. even after moisture absorption.

[0130] (Melt viscosity at 120℃) The melt viscosity at 120° C. of the die bond film according to each example was measured. The melt viscosity at 120° C. was measured according to the procedure described in the Examples section above, and the results are shown in Table 2.

[0131] (Glass transition temperature of die bond film) For the die bond film according to each example, the glass transition point was measured. The glass transition temperatures were measured according to the procedure described in the Examples section above, and the results are shown in Table 2.

[0132] (peel strength) For the dicing die bond film according to each example, the peel strength of the die bond film to the dicing tape (adhesive layer) was measured by a T-type peel test. After the adhesive layer was sufficiently irradiated with active energy rays (ultraviolet rays), the peel strength was measured. The peel strength was measured using a tensile tester (manufactured by Shimadzu Corporation, product name "AGS-J") at a measurement temperature of 23° C. and a tensile speed of 300 mm / min. The results are shown in Table 2.

[0133] [Table 2]

[0134] <Adhesion condition (reliability) to the substrate (lead frame or organic substrate)> The dicing die bond film according to each example was evaluated for its adhesion to the lead frame. A silver-plated copper lead frame was used as the lead frame. In the copper lead frame, the silver-plated area constitutes the chip mounting area (die pad). The evaluation of the adhesion to the lead frame was carried out according to the following procedure. (1) Under conditions of a temperature of 70° C. and a pressure of 0.1 MPa, a silicon bare wafer having a thickness of 50 μm is bonded to a dicing die bond film according to each example. (2) Using a dicing device (manufactured by Disco Corporation, product name "DFD6361"), the silicon bare wafer and the dicing die bond film of each example are cut into a planar dimension of 2 mm x 2 mm to obtain multiple semiconductor chips with die bond films. (3) Using a die bond device (manufactured by Fasford Technology, product name "Die Bonder 830plus+"), the semiconductor chip with the die bond film of each example is attached to the chip mounting area (die pad) of the copper lead frame under the conditions of a temperature of 130°C, a load of 0.2 MPa, and a bonding time of 2 seconds. This is repeated ten times to attach a semiconductor chip with a die bond film according to each example to each of the ten chip mounting areas (die pads) on the copper lead frame, thereby obtaining a lead frame with a semiconductor chip according to each example. (4) Using a molding resin (thermosetting resin), all of the semiconductor chips in the lead frame with the semiconductor chips of each example are embedded to obtain the lead frame with the embedded semiconductor chips, and then the lead frame with the embedded semiconductor chips is subjected to a heat treatment at a temperature of 175°C for 5 hours to obtain a test specimen for evaluating the adhesion state of each example. (5) After treating the test specimens for evaluating the adhesion state according to each of the above examples under moisture absorption reflow conditions (conditions conforming to JEDEC Level 2 / IR at 260 deg. C), an ultrasonic imaging device (Hitachi Power Solutions Co., Ltd., product name "Hybrid SAT") is used to evaluate the degree of peeling of the die bond film from the chip mounting area (die pad) of the copper lead frame, i.e., the adhesion state to the lead frame. The adhesion state to the lead frame was evaluated according to the following criteria. Excellent: No peeling of the die bond film was observed in any of the 10 chip mounting areas (die pads). Good: Peeling of the die bond film is not observed in 8 or 9 chip mounting areas (die pads). That is, peeling of the die bond film is observed in 1 or 2 chip mounting areas (die pads). Pass: Peeling of the die bond film is not observed in the area (die pad) with 5 to 7 chips mounted. In other words, peeling of the die bond film is observed in the area (die pad) with 3 to 5 chips mounted. Unacceptable: Peeling of the die bond film is not observed in areas (die pads) with 4 or less chips mounted. In other words, peeling of the die bond film is observed in areas (die pads) with 6 or more chips mounted. Table 2 shows the results of evaluation of the adhesion state to the lead frame. In addition, the adhesive state of the die bond film according to each example was evaluated in the same manner as above for a circuit board whose surface was treated with a solder resist using an epoxy resin (hereinafter referred to as an organic board). The results are also shown in Table 2.

[0135] <Connectivity to bonding wires> Except for using a semiconductor chip having an electrode portion on one side (hereinafter referred to as a semiconductor chip with electrode portion) instead of a silicon bare wafer, the steps (1) to (3) described in the above section "Adhesion state to lead frame" were repeated 10 times to attach the semiconductor chip with electrode portion with die bond film according to each example to each of the 10 chip mounting areas (die pads) on the silver lead frame, thereby obtaining a lead frame with the semiconductor chip with electrode portion according to each example attached. Then, each of the multiple lead terminals of the lead frame was connected to each of the electrode portions of the 10 semiconductor chips with electrodes by a bonding wire, and the connection state of the bonding wires to the electrode portions of the 10 semiconductor chips with electrodes was checked. The connection using the bonding wire was performed by heating the lead frame at a temperature of 180° C. and then ultrasonic bonding. The lead terminals were made of an aluminum alloy, and the bonding wires were made of a gold alloy processed into a thin wire (gold alloy thin wire).

[0136] In the lead frames to which the semiconductor chips with electrodes according to each embodiment were attached, no poor connection of the bonding wire to the electrodes of any of the ten semiconductor chips with electrodes was confirmed, whereas in the lead frames to which the semiconductor chips with electrodes according to each comparative example were attached, poor connection of the bonding wire to the electrodes of any of the ten semiconductor chips with electrodes was confirmed. From these results, it can be seen that when a die bond film having a storage modulus of 200 MPa or more at 150° C. is used, poor connection of the bonding wire to the electrode portion of the semiconductor chip with electrodes can be sufficiently suppressed. [Explanation of symbols]

[0137] 1: Base material layer, 2: Adhesive layer, 10: Die bond film, 20: Semiconductor chip, 30: Adherend, 40: Dicing tape, 50: Dicing die bond film, 100: Semiconductor device, 110: Lead frame, 120: Molding resin, 130: Bonding wire, 110a: chip mounting area; 110b: metal substrate; 110c: lead terminal; A: adherend, G: backgrinding tape, H: holder, J: suction jig, P: pin member, R: dicing ring, T: wafer processing tape, U: push-up member, W: semiconductor wafer, DB: dicing blade, TA: table.

Claims

1. A die bond film containing a thermosetting resin as an organic component, After heat curing, the storage modulus at 150°C is 200 MPa or more, When the adhesive is attached to a silver-plated copper lead frame and exposed to an environment having a temperature of 85° C. and a relative humidity of 60% RH for 168 hours, the adhesive has a shear adhesive strength of 3 MPa or more to the silver-plated copper lead frame at 260° C. Die bond film.

2. The melt viscosity at 120°C is 100 Pa s or more. The die-bonding film according to claim 1 .

3. The organic component further includes an acrylic polymer, The proportion of the acrylic polymer in the total mass of the organic components is 15% by mass or more and 55% by mass or less. The die-bonding film according to claim 1 or 2.

4. The acrylic polymer has an acid value of 0.1 mgKOH / g or more. The die-bonding film according to claim 3 .

5. Further comprising an inorganic filler as an inorganic component, The proportion of the inorganic filler in the total mass of the organic component and the inorganic component is 30 mass% or more and 60 mass% or less. The die-bonding film according to claim 1 or 2.

6. The thermosetting resin includes an epoxy resin and a phenol resin, The epoxy resin has an epoxy equivalent of 170 g / eq or less, The phenolic resin has a hydroxyl equivalent of 170 g / eq or less. The die-bonding film according to claim 1 or 2.

7. The glass transition temperature Tg after heat curing is 140° C. or higher. The die-bonding film according to claim 1 or 2.

8. Used to attach semiconductor chips to silver-plated copper lead frames. The die-bonding film according to claim 1 or 2.

9. a lead frame having at least one chip mounting area for mounting a semiconductor chip; At least one die bond film attached to at least one of the chip mounting areas; At least one semiconductor chip attached to the at least one die bond film; The die bond film is the die bond film according to claim 1 or 2, the lead frame is a silver-plated copper lead frame; Semiconductor device.

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