Processing device

Abstract

To suppress deposition of a processed waste to an undersurface of a tape.SOLUTION: A processing device is a device for attaching a wafer W to a tape T attached in a manner to plug an opening of a ring frame F, allowing an integrated with frame setting to be held with a chuck table, and processing a wafer W. The chuck table includes a wafer holding part for suction holding a tape T in an area where the wafer W is attached to by a holding surface, a frame holding part arranged outside of the wafer holding part and holding a ring frame F in a manner that a top surface of the ring frame F is below the holding surface, and a ring nozzle 14 having an ejection nozzle 15 for ejecting water from a top surface 141 which is allowed to contact in ring-shape with un undersurface TB of a tilted tape T of the frame setting held by the wafer holding part and the frame holding part.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a processing device. [Background technology]

[0002] Patent Documents 1 and 2 describe a processing device that uses a processing tool to process a wafer in a frame set held on a chuck table. The frame set is formed by integrating a ring frame and a wafer by attaching the wafer to a tape (dicing tape) that covers the opening of the ring frame. Patent Document 3 describes a chuck table used in such a processing device.

[0003] As described in Patent Documents 1 to 3, a chuck table used in a processing device includes a wafer holding part that holds a wafer by suction via a tape with a holding surface, and a frame holding part that holds a ring frame. The frame holding part is configured to hold the ring frame at a position lower than the holding surface to avoid contact between a processing tool and the ring frame during processing of the wafer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2011-042003 A [Patent Document 2] Patent Publication No. 2021-098233 [Patent Document 3] JP 2016-198870 A Summary of the Invention [Problem to be solved by the invention]

[0005] By holding the ring frame at a position lower than the holding surface of the frame holding part, the tape is fixed to the chuck table in a state where it is pulled diagonally downward from the wafer holding part toward the frame holding part. In this state, as described in Patent Documents 1 and 2, the bottom surface of the tape is exposed between the wafer holding part and the frame holding part. Therefore, processing debris that has entered below the tape may adhere to the bottom surface of the tape and soil the tape.

[0006] If processing waste adheres to the underside of the tape, it may dry later and peel off from the tape when the frame set is transported or the tape is expanded, causing a risk of soiling the inside of the device. To avoid this, it is necessary to add a cleaning process to clean the underside of the tape, but adding a cleaning process after the processing process takes a long time, which reduces the productivity of the processing device.

[0007] As in Patent Document 3, it is possible to reduce the gap that occurs below the dicing tape by configuring an inclined surface between the wafer holder and the frame holder. However, even in this case, it is not easy to completely eliminate this gap, and it is difficult to completely prevent processing waste from adhering to the underside of the tape. Therefore, even if the chuck table described in Patent Document 3 is used, the above-mentioned problem occurs.

[0008] The present invention has been made in view of the above-mentioned points, and has an object to provide a technique for suppressing adhesion of processing waste to the lower surface of the tape. [Means for solving the problem]

[0009] One embodiment of the processing apparatus of the present invention is a processing apparatus which processes a wafer by attaching a wafer to a tape that is affixed to a ring frame so as to cover an opening, and holding the integrated frame set on a chuck table, wherein the chuck table comprises a wafer holding portion that suction-holds the tape in the area where the wafer is affixed with a holding surface, a frame holding portion that is positioned outside the wafer holding portion and holds the ring frame so that the upper surface of the ring frame is lower than the holding surface, and a ring nozzle having a nozzle that sprays water from its upper surface to make ring-shaped contact with the lower surface of the inclined tape of the frame set held by the wafer holding portion and the frame holding portion. Effect of the Invention

[0010] According to the present invention, a technique can be provided for suppressing adhesion of processing waste to the lower surface of the tape. [Brief description of the drawings]

[0011] [Figure 1] 1 is a perspective view of a processing device according to a first embodiment. [Diagram 2] 3 is a cross-sectional view of the processing apparatus according to the first embodiment before grinding of an upper surface of a chuck table. FIG. [Diagram 3] 4 is a cross-sectional view of the processing apparatus according to the first embodiment after the upper surface of the chuck table has been ground. FIG. [Figure 4] 3 is an enlarged view of a portion of a cross section of the chuck table according to the first embodiment before the upper surface of the chuck table is ground. FIG. [Diagram 5] 4 is an enlarged view of a portion of a cross section of the chuck table according to the first embodiment after the upper surface of the chuck table has been ground. FIG. [Figure 6] 6 is a cross-sectional view of the processing apparatus according to the second embodiment before grinding of the upper surface of the chuck table. FIG. [Figure 7] 11 is a cross-sectional view of the processing apparatus according to the second embodiment after the upper surface of the chuck table has been ground. FIG. [Figure 8]11 is an enlarged view of a portion of a cross section of a chuck table according to a second embodiment before the upper surface of the chuck table is ground. FIG. [Figure 9] 11 is an enlarged view of a portion of a cross section of the chuck table according to the second embodiment after the upper surface of the chuck table has been ground. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] (First embodiment) FIG. 1 is a perspective view of a processing device 1 according to this embodiment. The X-axis, Y-axis, and Z-axis directions shown in FIG. 1 are perpendicular to each other. The X-axis and Y-axis directions are substantially horizontal, and the Z-axis direction is an up-down direction (substantially vertical). FIGS. 2 and 3 are cross-sectional views of the processing device 1 according to this embodiment. FIGS. 4 and 5 are enlarged views of a portion of a cross section of a chuck table 10 according to this embodiment. The processing device 1 according to this embodiment will be described with reference to FIGS. 1 to 5.

[0013] The suction force of the holding surface 111 of the chuck table 10 may decrease due to the adhesion of machining chips. In such a case, the upper surface of the holding surface 111 to which the machining chips are attached is ground using a grindstone for table grinding to remove the machining chips, but grinding the holding surface lowers the height of the holding surface. Figures 2 and 4 show a state in which the holding surface is relatively high before the upper surface of the chuck table is ground. In contrast, Figures 3 and 5 show a state in which the holding surface is relatively low after the upper surface of the chuck table is ground.

[0014] The processing device 1 according to this embodiment is a processing device that holds a frame set on a chuck table 10 and processes a wafer W included in the frame set held on the chuck table 10. In this example, the processing device 1 is a grinding device that grinds the wafer W using a grinding wheel 64 in which grinding stones 66 are arranged in a ring shape. However, the processing device 1 is not limited to a device configuration dedicated to grinding as shown in FIG. 1, and may be incorporated into a fully automatic type processing device in which a series of processes such as grinding, polishing, cutting, and cleaning are fully performed. In addition, the processing device 1 may be a polishing device dedicated to polishing as described later in a second embodiment, or may be a cutting device dedicated to cutting.

[0015] As shown in FIG. 1, the processing apparatus 1 includes a chuck table 10 that holds a frame set including a wafer W, a grinding mechanism 60 that grinds the wafer W, and a processing feed mechanism 70 that is a moving mechanism that moves the grinding mechanism 60 in the Z-axis direction.

[0016] There is no particular limitation on the wafer W processed by the processing device 1. The wafer W may be, for example, a semiconductor substrate such as silicon or gallium arsenide, or other substrate. The frame set is formed by attaching the wafer W to a dicing tape T attached to a ring frame F so as to cover the opening of the ring frame F, and integrating the dicing tape T and the wafer W, as shown in Figs. 2 and 3 .

[0017] 1, a rectangular opening extending in the Y-axis direction is formed on the upper surface of the base 4 of the processing device 1, and the chuck table 10 moves in the Y-axis direction within the opening of the base 4. This opening is covered by a bellows-shaped waterproof cover 3 that is movable together with the chuck table 10. Provided below the waterproof cover 3 are a movement mechanism 20 that moves the chuck table 10 in the Y-axis direction, a table rotation mechanism 30 (see FIGS. 2 and 3) that rotates the chuck table 10, and an inclination adjustment mechanism 40 that adjusts the inclination of the chuck table 10.

[0018] 1, the moving mechanism 20 is a ball screw type electric slider, and includes a ball screw 21 and a guide rail 22 extending in the Y-axis direction, a motor 23 connected to one end of the ball screw 21, and a slide portion 24 slidably installed on the guide rail 22. A nut portion (not shown) screwed into the ball screw 21 is formed on the rear surface of the slide portion 24. In the moving mechanism 20, the slide portion 24 moves in the Y-axis direction due to the rotation of the motor 23, and the chuck table 10 fixed to the slide portion 24 moves in the Y-axis direction accordingly.

[0019] The chuck table 10 is further connected to a table rotation mechanism 30, and is configured to be rotatable about a rotation axis in the Z-axis direction by the driving of the table rotation mechanism 30. The detailed configuration of the chuck table 10 will be described later.

[0020] 2 and 3, the table rotation mechanism 30 includes a motor 31, a belt pulley 32 provided on an output shaft of the motor 31, and a belt 33 stretched between the belt pulley 32 and a spindle (chuck spindle 16) of the chuck table 10. When the belt pulley 32 is rotated by the motor 31, the rotational force is transmitted to the chuck spindle 16 via the belt 33. As a result, the rotation of the chuck spindle 16 rotates the chuck table 10.

[0021] The inclination of the chuck table 10 can be adjusted by a tilt adjustment mechanism 40. As shown in Fig. 1, the tilt adjustment mechanism 40 includes a support base 41, a position adjustment unit 44 connected to the support base 41, and a fixed support portion (not shown). The support base 41 includes a cylindrical portion 42 into which the chuck spindle 16 is inserted, and a disk-shaped flange portion 43 formed by expanding the diameter of the lower portion of the cylindrical portion 42. A bearing disposed inside the cylindrical portion 42 contacts the outer circumferential surface of the chuck spindle 16, and the chuck spindle 16 is rotatably supported by the cylindrical portion 42 via the bearing.

[0022] The position adjustment units 44 are provided at two or more locations at different positions in the circumferential direction of the support base 41, and each position adjustment unit 44 is connected to the flange portion 43. In the configuration of FIG. 1, two position adjustment units 44 are provided at positions 120 degrees apart in the circumferential direction, and one fixed support portion (not shown) is further provided at a position 120 degrees apart. The fixed support portion supports the flange portion 43 at a constant height position. The two position adjustment units 44 can operate independently to change the height position of the flange portion 43. The tilt adjustment mechanism 40 adjusts the tilt of the chuck spindle 16, i.e., the tilt of the chuck table 10, by operating the position adjustment unit 44 to tilt the flange portion 43 with the fixed support portion as a fulcrum.

[0023] 1, the base 4 is provided with a height detection unit 50 disposed in the vicinity of the chuck table 10. The height detection unit 50 includes a support unit 51 disposed vertically on the base 4, and two measurement probes 52 and 53 disposed on the upper portion of the support unit 51. One of the probes, 52, is disposed at a position where it can contact the upper surface of the wafer W held on the chuck table 10 and continuously measure the height of the upper surface of the wafer W. The other probe 53 is disposed at a position where it can contact an outer circumferential area that is at the same height as the holding surface 111 of the chuck table 10 and continuously measure the height of the upper surface.

[0024] Further, as shown in FIG. 1, a column 5 is erected on the base 4. The column 5 is provided with a processing feed mechanism 70 that processes and feeds the grinding mechanism 60 in the Z-axis direction, which is a direction perpendicular to the holding surface 111. The processing feed mechanism 70 is a ball screw type electric slider, and as shown in FIG. 1, includes a ball screw 71 and a guide rail 72 extending in the Z-axis direction, a motor 73 connected to one end of the ball screw 71, and a Z-axis stage 74 slidably installed on the guide rail 72. A nut portion (not shown) screwed onto the ball screw 71 is formed on the rear side of the Z-axis stage 74. In the processing feed mechanism 70, the Z-axis stage 74 moves in the Z-axis direction due to the rotation of the motor 73, and accordingly, the grinding mechanism 60 fixed to the Z-axis stage 74 moves in the Z-axis direction along the guide rail 72.

[0025] 1, the grinding mechanism 60 includes a spindle unit 61, a mount 62 provided at the lower end of the spindle unit 61, a holder 63 surrounding the spindle unit 61 and fixed to a Z-axis stage 74, and a grinding wheel 64 held on the lower surface of the mount 62. The grinding mechanism 60 is configured to rotate the grinding wheel 64 around its central axis by the spindle unit 61. The grinding wheel 64 includes a wheel base 65 and a plurality of grinding wheels 66 arranged in a ring shape on the lower surface of the wheel base 65. The plurality of grinding wheels 66 are formed, for example, by solidifying diamond abrasive grains with a bonding agent such as a vitrified bond.

[0026] In the processing apparatus 1, the grinding wheel 64 is rotated at high speed by the spindle unit 61, and the chuck table 10 is rotated at low speed in the same direction by the table rotation mechanism 30. As a result, the grinding wheel 66 moves in contact with the wafer W, and the wafer W is ground by the grinding wheel 66. During the grinding process, grinding water supplied from a grinding water supply source 80 shown in Fig. 2 is sprayed onto the central portion of the wafer W via a flow path 81 passing through the spindle unit 61 and the mount 62.

[0027] In the processing apparatus 1 configured as above, by providing the chuck table 10, it is possible to suppress adhesion of processing waste to the lower surface TB of the dicing tape T. Hereinafter, the chuck table 10 will be described in detail.

[0028] As shown in Figures 1 to 5, the chuck table 10 includes a porous plate 11, a frame body 12, a frame clamp 13, a ring nozzle 14 having an ejection port 15, a cylindrical chuck spindle 16 provided below the frame body 12, and an elastic member 18 supporting the ring nozzle 14.

[0029] As shown in Figures 2 to 5, the frame 12 is formed with a circular recess and an annular recess, each of which opens upward. The circular recess is formed in the center of the frame 12, and the porous plate 11 is fitted into the circular recess. The center of the circular recess roughly coincides with the rotation axis of the chuck spindle 16. The annular recess is formed outside the circular recess formed in the center. A ring nozzle 14 and an elastic member 18 are disposed in the annular recess.

[0030] 2 and 3, a suction path 101 is formed inside the frame 12, which connects the upper surface of the recess in which the porous plate 11 is fitted to the suction source 100. A negative pressure is generated on the surface of the porous plate 11 by the suction action of the suction source 100. The suction path 101, which extends from the suction source 100 to the porous plate 11, is connected to the chuck table 10 via a rotary joint 17.

[0031] The chuck table 10 sucks and holds the wafer W and the dicing tape T using the surface of the porous plate 11, where negative pressure is generated, as a holding surface 111. In the processing device 1, the porous plate 11 and the frame 12 of the chuck table 10 form a wafer holding section that sucks and holds the dicing tape T in the area where the wafer W is attached using the holding surface 111.

[0032] In contrast, the frame clamp 13 constitutes a frame holding section that holds the ring frame F. As shown in Figs. 2 to 5, the frame clamp 13 is disposed in a portion located outside the annular recess, formed lower than the holding surface 111 located inside the annular recess. In other words, the frame clamp 13 is disposed at a position lower than the holding surface 111 outside the wafer holding section. Furthermore, the frame clamp 13 holds the ring frame F so that the upper surface of the ring frame F is lower than the holding surface 111, that is, so that the ring frame F is below the holding surface 111. In this way, the frame clamp 13 holds the ring frame F at a position lower than the holding surface 111, thereby making it possible to avoid interference between the grinding mechanism 60 and the ring frame F.

[0033] 1, four frame clamps 13 are provided at positions that are 90 degrees apart in the circumferential direction, but the arrangement and number of frame clamps 13 are not limited to this example. Also, the frame holding section is not particularly limited as long as it can hold the ring frame F. As the frame holding section, instead of clamping the ring frame F, for example, one that holds the ring frame F by adsorbing it as described in Patent Document 1 may be used, or one that holds the ring frame F by magnetically attaching it with a magnet as described in Patent Document 3 may be used.

[0034] As shown in Figures 2 to 5, the ring nozzle 14 is disposed in an annular recess in the frame body 12, and the upper surface 141 of the ring nozzle 14 is in ring-like contact with the lower surface TB of the inclined dicing tape T of the frame set held by the wafer holding portion and the frame holding portion.

[0035] As shown in Figures 4 and 5, a plurality of flow paths 142 through which water passes are formed, for example, at predetermined intervals in the circumferential direction inside the ring nozzle 14. One end of each flow path 142 is formed on the upper surface 141 of the ring nozzle 14 and functions as an outlet 15 for spraying water onto the lower surface TB of the dicing tape T. The other end of each flow path 142 is connected to a flow path 91 formed inside the frame 12 via a tube 92 provided in the annular recess of the frame 12. As shown in Figures 2 and 3, the flow path 91 is a flow path that communicates between a water supply source 90 and the annular recess.

[0036] The water supply source 90 is, for example, a supply source of cooling water for cooling the chuck table 10. A flow path 91 leading from the water supply source 90 to the annular recess is connected to the chuck table 10 via a rotary joint 17. The flow path 91 branches into multiple paths from near the center of the frame 12, extends radially outward in the radial direction, and connects to the annular recess.

[0037] The chuck table 10 is configured such that cooling water flows from a water supply source 90 through a flow path 91 and into the chuck table 10 (frame 12), thereby cooling the chuck table 10 that has generated heat due to the grinding process.

[0038] Furthermore, in the chuck table 10, cooling water is ejected from the ejection port 15 formed on the upper surface 141 of the ring nozzle 14 via the flow path 91, the tube 92, and the flow path 142 from the water supply source 90, so that the cooling water flows between the lower surface TB of the dicing tape T, which is in contact with the upper surface 141 with an appropriate pressure, and the upper surface 141 of the ring nozzle 14, forming a water layer 93. The cooling water that has formed the water layer 93 is drained to the radial outside of the ring nozzle 14. This makes it possible to prevent the intrusion of processing waste liquid including processing chips from the outside of the chuck table 10.

[0039] The water layer 93 formed between the lower surface TB and the upper surface 141 is maintained while cooling water is being sprayed from the spray nozzle 15. Therefore, in the chuck table 10, by constantly supplying cooling water during machining, the water layer 93 is maintained, and it is possible to prevent the occurrence of gaps through which machining scraps and machining waste liquid can enter and the exposure of the lower surface TB. This makes it possible to reliably prevent the adhesion of machining scraps to the lower surface TB.

[0040] In addition, instead of constantly supplying the cooling water during processing, for example, the cooling water may be supplied periodically during processing or immediately before the end of processing. In this case, even if processing debris temporarily adheres to the lower surface TB while the supply of cooling water is stopped, it can be washed away before the end of processing. This makes it possible to avoid inconveniences such as processing debris dropping and scattering from the lower surface TB during transportation after processing. Also, unlike the case of cleaning after processing, no additional processing time is required for cleaning, so the above-mentioned inconveniences can be avoided without reducing the productivity of the processing device 1.

[0041] An upper surface 141 of the ring nozzle 14 is in ring-like contact with a lower surface TB of the inclined dicing tape T of the frame set held by the wafer holding part and the frame holding part. More specifically, the ring nozzle 14 is disposed in an annular recess via an elastic member 18 constituting a cantilever so as to be movable in a vertical direction relative to the holding surface 111, and is adjusted in advance so that the upper surface 141 is at a height that contacts the lower surface TB of the dicing tape T. In the chuck table 10 configured in this manner, the upper surface of the ring nozzle 14 placed on the elastic member 18 contacts and presses against the dicing tape T, thereby bending the elastic member 18 and maintaining a state in which the dicing tape T and the ring nozzle 14 are in contact with each other with an appropriate pressure.

[0042] The elastic member 18 plays a role in bringing the ring nozzle 14 into contact with the dicing tape T with an appropriate pressure, and also enables the elastic member 18 to accommodate changes in the height of the holding surface 111. How the elastic member 18 accommodates changes in the height of the holding surface 111 will be described below.

[0043] In the wafer holding part, the suction force may be reduced due to the adhesion of processing debris to the holding surface 111, and in such a case, the holding surface 111 may be ground with a grindstone for table grinding to remove the upper surface portion to which the processing debris has adhered. When the holding surface 111 is ground, the height of the holding surface 111 is lowered, and therefore the height of the lower surface TB of the dicing tape T when the frame set is held is also necessarily lowered.

[0044] As the height of the lower surface TB decreases, the downward pressure applied to the ring nozzle 14 arranged to contact the lower surface TB increases, but as shown in Figs. 4 and 5, this increased downward pressure can be absorbed by the bending of the elastic member 18. Fig. 5 shows how the elastic member 18 bends to adjust the contact pressure between the ring nozzle 14 and the lower surface TB. In this way, in the chuck table 10, even if the height of the holding surface 111 changes because the ring nozzle 14 is arranged on the elastic member 18, the dicing tape T and the ring nozzle 14 can be maintained in contact with each other with an appropriate pressure. Therefore, the chuck table 10 can exert the function of forming the water layer 93 to suppress adhesion of processing waste regardless of the height of the holding surface 111.

[0045] As described above, according to the processing apparatus 1 including the above-described chuck table 10, adhesion of processing waste to the lower surface TB of the dicing tape T can be suppressed.

[0046] Second Embodiment Figures 6 and 7 are cross-sectional views of the processing device according to this embodiment, and Figures 8 and 9 are enlarged views of a portion of the cross section of the chuck table according to this embodiment. Figures 6 and 8 show a state in which the holding surface is relatively high before the upper surface of the chuck table is ground. Figures 7 and 9 show a state in which the holding surface is relatively low after the upper surface of the chuck table is ground. The processing device according to this embodiment will be described with reference to Figures 6 to 9.

[0047] The processing apparatus according to this embodiment is a polishing apparatus that polishes a wafer W using a polishing tool 164, and differs from the processing apparatus 1 in that it includes a polishing mechanism 160 instead of the grinding mechanism 60, and that the chuck table has an elastic member 19 instead of the elastic member 18. The processing apparatus according to this embodiment also differs from the processing apparatus 1 according to the first embodiment in the shape of the flow path formed in the ring nozzle 14.

[0048] 6 and 7, the polishing mechanism 160 includes a spindle unit 161, a mount 162 provided at the lower end of the spindle unit 161, a holder (not shown) surrounding the spindle unit 161 and fixed to the Z-axis stage 74, and a polishing tool 164 held on the lower surface of the mount 162. The polishing mechanism 160 is configured to rotate the polishing tool 164 around its central axis by the spindle unit 161. The polishing tool 164 includes a support base 165 and a polishing pad 166 attached to the lower surface of the support base 165. The polishing surface of the polishing pad 166 is large enough to cover the entire upper surface of the wafer W when it comes into contact with the wafer W.

[0049] In the processing apparatus according to this embodiment, the polishing pad 166 is rotated by the spindle unit 161, and the wafer W against which the polishing pad 166 is pressed is mechanically polished by the abrasive grains on the polishing surface of the polishing pad 166. Furthermore, in the processing apparatus according to this embodiment, etching is also performed by the polishing liquid (slurry) supplied from the polishing liquid supply source 180. Specifically, as shown in FIG. 6 and FIG. 7, a flow path 181 penetrating the spindle unit 161, the mount 162, and the polishing tool 164 is formed along the center of rotation of the polishing mechanism 160, and the polishing liquid is supplied from the polishing liquid supply source 180 to the wafer W through the flow path 181. The polishing liquid supplied onto the wafer W is supplied to the entire surface of the wafer W by the centrifugal force generated by the rotation of the polishing pad 166, running through the supply grooves formed in a lattice shape on the polishing surface of the polishing pad 166. As a result, the polishing liquid spreads over the entire surface of the wafer W, and the entire surface of the wafer W is etched by the polishing liquid.

[0050] In the chuck table of the processing apparatus according to this embodiment, instead of arranging the ring nozzle 14 on an elastic member 18 which is a cantilever, the ring nozzle 14 is arranged on an elastic member 19 which is arranged on the bottom surface of an annular recess. Note that, like the processing apparatus according to the first embodiment, the upper surface 141 of the ring nozzle 14 is in ring-like contact with the lower surface TB of the inclined dicing tape T of the frame set held by the wafer holding part and the frame holding part.

[0051] In addition, since the ring nozzle 14 is disposed on the elastic member 19, it is movable in a direction perpendicular to the holding surface 111 due to the elasticity of the elastic member 19. In other words, the ring nozzle 14 is disposed in the annular recess via the elastic member 19 so as to be movable in a direction perpendicular to the holding surface 111.

[0052] Therefore, in the processing apparatus of this embodiment, as in the processing apparatus 1 of the first embodiment, the upper surface 141 of the ring nozzle 14 is adjusted in advance so as to contact the lower surface TB, and the elastic deformation of the elastic member 19 maintains the dicing tape T and the ring nozzle 14 in contact with each other at an appropriate pressure regardless of the height of the holding surface 111.

[0053] In the processing apparatus according to the present embodiment configured as described above, similarly to the processing apparatus 1, a water layer 93 can be formed between the upper surface of the ring nozzle 14 and the lower surface TB of the dicing tape T by the cooling water supplied from the water supply source 90. In addition, since the cooling water that has formed the water layer 93 is drained to the radial outside of the ring nozzle 14, it is possible to prevent the intrusion of a polishing liquid (slurry) containing processing debris from the outside of the chuck table.

[0054] Therefore, even with the processing device according to this embodiment, the water layer 93 is maintained by continuously supplying cooling water during processing, and it is possible to prevent the occurrence of gaps through which processing debris and abrasive liquid (slurry) can enter and the exposure of the lower surface TB, thereby reliably preventing the adhesion of processing debris to the lower surface TB. In addition, cooling water may be supplied periodically during processing, or cooling water may be supplied immediately before the end of processing, so that even if processing debris adheres to the lower surface TB while the supply of cooling water is stopped, it can be washed away before the end of processing. This makes it possible to prevent a decrease in processing efficiency due to cleaning after processing and scattering of processing debris during transportation after processing, etc.

[0055] The embodiments of the present invention are not limited to the above-mentioned embodiments, and may be modified, substituted, or altered in various ways without departing from the spirit of the technical idea of ​​the present invention. Furthermore, if the technical idea of ​​the present invention can be realized in a different way due to technological progress or a different derived technology, the present invention may be implemented using that method. Therefore, the claims cover all embodiments that may be included within the scope of the technical idea of ​​the present invention.

[0056] In the above-described first and second embodiments, an example has been shown in which the water layer 93 is formed between the upper surface 141 and the lower surface TB by the cooling water supplied from the water supply source 90, but the water forming the water layer 93 is not limited to cooling water. The water forming the water layer 93 may be any liquid that can suppress adhesion of processing waste to the lower surface TB, and is not particularly limited. [Industrial Applicability]

[0057] As described above, the processing apparatus of the present invention forms a water layer 93 between the lower surface TB of the dicing tape T and the upper surface 141 of the ring nozzle 14, thereby making it possible to suppress adhesion of processing waste to the lower surface TB and avoid a decrease in productivity that occurs when a cleaning process is performed after a processing process. For this reason, the present invention is useful in processing apparatuses that process wafers by holding a frame set in which a dicing tape and a wafer are integrated on a chuck table, and is extremely useful in processing apparatuses such as grinding apparatuses and polishing apparatuses. [Explanation of symbols]

[0058] 1: Processing equipment 10: Chuck table 11: Porous plate 12:Frame body 13: Frame clamp 14: Ring nozzle 15: spout 18, 19: Elastic member 60: Grinding mechanism 66: Grinding wheel 80: Grinding water supply source 90: Water supply source 81, 91, 142, 143, 181: Flow path 92: Tube 93: Water layer 100: Suction source 101:Suction path 111: Holding surface 141:Top surface 160: Polishing mechanism 166: Polishing pad 180: Polishing liquid supply source F: Ring frame T: Dicing tape TB:Bottom surface W: Wafer

Claims

1. A processing apparatus for processing a wafer by attaching a wafer to a tape attached to a ring frame so as to close an opening of the ring frame, holding the integrated frame set on a chuck table, and processing the wafer, comprising: The chuck table is a wafer holder that holds the tape by suction using a holding surface in the area where the wafer is attached; a frame holding part that is disposed outside the wafer holding part and holds the ring frame such that an upper surface of the ring frame is lower than the holding surface; a ring nozzle having a nozzle that sprays water from an upper surface thereof to bring into ring-shaped contact with the lower surface of the inclined tape of the frame set held by the wafer holding portion and the frame holding portion.

2. The processing apparatus according to claim 1 , wherein the ring nozzle is disposed via an elastic member so as to be movable in a direction perpendicular to the holding surface.

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