CMP conditioning disc and method of manufacturing the CMP conditioning disc

Abstract

To provide: a CMP conditioning disc capable of having a plurality of diamonds uniformly arranged on a shank base; and a method of manufacturing the CMP conditioning disc.SOLUTION: There is provided a method of manufacturing a CMP conditioning disc according to one embodiment of the present invention, including: a primary forming layer forming step of forming a primary forming layer on an outer surface of a shank base and arranging a plurality of diamonds on the primary forming layer; and a secondary forming layer forming step of forming a secondary forming layer on an upper surface of the primary forming layer and exposing at least a portion of the diamonds in the secondary forming layer. There is also provided a CMP conditioning disc according to one embodiment including: a shank base; a primary forming layer formed on an outer surface of the shank base; a secondary forming layer formed on an outer surface of the primary forming layer; and a plurality of diamonds arranged so as to be filled in the primary forming layer and the secondary forming layer, at least a portion of the diamonds being exposed from the secondary forming layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a CMP conditioning disk and a method for making a CMP conditioning disk. [Background technology]

[0002] Generally, the planarization process using a polishing technique (CMP: Chemical Mechanical Polishing) is a processing method in which a carrier holds a wafer, which is the object to be polished, and the platen and carrier are moved relative to each other to polish the wafer while supplying slurry onto the polishing pad of the platen.

[0003] The numerous foamed pores on the surface of the polishing pad serve to hold new polishing liquid, enabling a certain polishing efficiency and polishing uniformity across the entire surface of the wafer to be achieved. However, as pressure and relative speed are applied during polishing, the surface of the polishing pad deforms unevenly over processing time, and the pores on the polishing pad become clogged with polishing residue, making the polishing pad unable to fulfill its function.

[0004] CMP pad conditioners are used to solve the uneven deformation and clogging of pores of polishing pads. CMP pad conditioners can form new micropores in the polishing pad by finely polishing the surface of the polishing pad. A fused pad conditioner, which is one type of CMP pad conditioner, fixes diamonds by fusion on a shank made of stainless steel, and conditions the pad during the CMP process. In the diamond setting process for adjusting the diamond position of the conventional fused CMP pad conditioner, when the diamond is passed through a hole of a certain size formed in an etched mask substrate, the diamond is seated on the disk by the adhesive scattered on the metal powder layer on the shank.

[0005] However, in the case of conventional CMP pad conditioners, when the brazing powder liquefies and solidifies through heat treatment after the diamond setting process, the part that fixes the diamonds becomes liquid. At this time, the position and posture of the diamonds become distorted, which can lead to the diamonds being irregularly positioned on the shank. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent Publication No. 10-2012-0058303 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide a CMP conditioning disk and a method for manufacturing the CMP conditioning disk, in which multiple diamonds can be uniformly arranged on a shank base. [Means for solving the problem]

[0008] According to one aspect of the present invention, a method for manufacturing a CMP conditioning disk can be provided, which includes a primary molding layer formation step of forming a primary molding layer on the outer surface of a shank base and arranging a plurality of diamonds in the primary molding layer, and a secondary molding layer formation step of forming a secondary molding layer on an upper surface of the primary molding layer and exposing at least a portion of the diamonds from the secondary molding layer.

[0009] In addition, there may be provided a method for manufacturing a CMP conditioning disk, wherein the primary molded layer forming step forms the primary molded layer through a brazing process or a sintering process, and the secondary molded layer forming step forms the secondary molded layer through a brazing process.

[0010] In addition, a method for manufacturing a CMP conditioning disk can be provided, wherein the primary molding layer forming step includes a primary metal powder layer forming step of providing a primary metal powder layer on the outer surface of the shank base and pre-sintering it, an adhesive layer forming step of forming an adhesive layer on the outer surface of the primary metal powder layer, and a primary diamond fixing step of temporarily fixing the diamond to the outer surface of the adhesive layer.

[0011] In addition, a method for manufacturing a CMP conditioning disk can be provided in which the primary diamond fixing step fixes a plurality of diamonds to the primary molding layer so as to maintain an upright position downward from the upper end of the long axis.

[0012] In addition, a method for manufacturing a CMP conditioning disk can be provided in which the primary diamond fixing step involves temporarily holding a plurality of diamonds in a regular pattern of rows and columns in a suction and pressure device, and then using the suction and pressure device to pressurize and fix the plurality of diamonds onto the primary molding layer so that the diamonds maintain an upright posture.

[0013] In addition, a method for manufacturing a CMP conditioning disk can be provided, in which the secondary molding layer forming step includes a secondary metal powder layer forming step of pre-sintering a secondary metal powder layer on the outer surface of the primary molding layer to form a secondary molding layer, and a polishing step of dry polishing the secondary molding layer so as to cover all of the diamond or to expose at least a portion of the diamond.

[0014] In addition, a method for manufacturing a CMP conditioning disk may be provided, in which the secondary layer forming step further includes a secondary diamond fixing step of completely fixing the diamond to the secondary layer by shrinkage of the dry-polished secondary layer.

[0015] According to another aspect of the present invention, a CMP conditioning disk can be provided, comprising a shank base, a primary molding layer formed on the outer surface of the shank base, a secondary molding layer formed on the outer surface of the primary molding layer, and a plurality of diamonds arranged to fill the primary molding layer and the secondary molding layer, at least a portion of which is exposed from the secondary molding layer.

[0016] In addition, a CMP conditioning disk can be provided in which a plurality of the diamonds are spaced apart in rows and columns on the outer surface of the secondary molding layer and are exposed to the same exposed height from the outer surface of the secondary molding layer.

[0017] It is also possible to provide a CMP conditioning disk in which the primary molded layer is formed with a melting point that is the same as, lower than, or higher than that of the secondary molded layer.

[0018] A CMP conditioning disk can also be provided in which the thickness from the outer surface of the primary molding layer to the outer surface of the secondary molding layer is greater than the thickness between the outer surface of the primary molding layer and the outer surface of the shank base.

[0019] It is also possible to provide a CMP conditioning disk manufactured according to any of the above methods for manufacturing a CMP conditioning disk. Effect of the Invention

[0020] According to an embodiment of the present invention, by uniformly arranging multiple diamonds in the X, Y and Z directions on the shank base during the brazing process, it is possible to achieve effective pad conditioning and low diamond wear.

[0021] In addition, according to an embodiment of the present invention, by using two molding processes to arrange multiple diamonds at uniform intervals and uniform heights on the shank base, it is possible to improve the pad polishing characteristics (PCR: Pad cut rate) and extend the life of the CMP conditioning disk. [Brief description of the drawings]

[0022] [Figure 1] FIG. 2 is a diagram of a CMP conditioning disk according to one embodiment of the present invention. [Diagram 2] FIG. 2 is an enlarged view showing a portion “A” in FIG. [Diagram 3] This is an enlarged photograph of Figure 1. [Figure 4A] FIG. 2 is a state diagram showing the CMP conditioning disk a of FIG. [Figure 4B] FIG. 1 is a phase diagram showing a conventional conditioning disk b. [Figure 5A] 1 is a photograph showing the diamond arrangement state of a CMP conditioning disk a of the present invention. [Figure 5B] 1 is a photograph showing the diamond arrangement state of a conventional conditioning disc b. [Figure 6A] 1 is a photograph showing the diamond arrangement state of a CMP conditioning disk a of the present invention. [Figure 6B] 1 is a photograph showing the diamond arrangement state of a conventional conditioning disc b. [Figure 7] 1 is a graph showing the relationship between pad life and PCR for the CMP conditioning disk a of the present invention and a conventional conditioning disk b. [Figure 8] FIG. 2 is a flow diagram illustrating a method for manufacturing a CMP conditioning disk according to one embodiment of the present invention. [Figure 9] 1 is a phase diagram illustrating a method for manufacturing a CMP conditioning disk according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments for realizing the concept of the present invention will be described in detail with reference to the drawings.

[0024] In the description of the present invention, if it is determined that a specific description of related publicly known configurations or functions may obscure the gist of the present invention, the detailed description will be omitted.

[0025] Additionally, when a component is referred to as being "coupled," "supported," "connected," "supplied," "communicated," or "in contact" with another component, it should be understood that the component may be directly coupled, supported, connected, supplied, communicated, or in contact with the other component, or there may be other components therebetween.

[0026] The terms used in this specification are merely used to describe specific embodiments and are not intended to limit the present invention. A singular expression includes a plural expression unless it has a clearly different meaning in the context.

[0027] In this specification, the expressions "upper side," "lower side," "side" and the like are described with reference to the drawings, and it is to be made clear in advance that they can be expressed differently if the orientation of the object is changed. For the same reason, in the attached drawings, some components are exaggerated, omitted, or shown in a schematic manner, and the size of each component does not completely reflect the actual size.

[0028] Furthermore, terms including ordinal numbers such as first, second, etc. may be used to describe various components, but the corresponding components are not limited by such terms, and these terms are used only to distinguish one component from another.

[0029] As used herein, the meaning of "comprising" is to embody certain properties, regions, integers, steps, operations, elements, components and / or components, and does not exclude the presence or addition of other certain properties, regions, integers, steps, operations, elements, components and / or groups.

[0030] Hereinafter, specific configurations of the CMP conditioning disk and the method for manufacturing the CMP conditioning disk according to the present invention will be described with reference to the drawings.

[0031] FIG. 1 is a diagram of a CMP conditioning disk according to an embodiment of the present invention. FIG. 2 is an enlarged view of the "A" portion of FIG. 1. FIG. 3 is a photograph of FIG. 1 taken by enlarging the portion. FIG. 4A is a state diagram showing the CMP conditioning disk a of FIG. 1, and FIG. 4B is a state diagram showing the conventional conditioning disk b. FIG. 5A is a photograph showing the diamond arrangement state of the CMP conditioning disk a according to an embodiment of the present invention, and FIG. 5B is a photograph showing the diamond arrangement state of the conventional conditioning disk b. FIG. 6A is a photograph showing the diamond arrangement state of the CMP conditioning disk a according to an embodiment of the present invention, and FIG. 6B is a photograph showing the diamond arrangement state of the conventional conditioning disk b. FIG. 7 is a graph showing the relationship between the pad life and PCR for the CMP conditioning disk a according to an embodiment of the present invention and the conventional conditioning disk b.

[0032] 1 to 7, the CMP conditioning disk 10 according to the embodiment of the present invention can uniformly arrange a plurality of diamonds 400 on the shank base 100. As shown in FIG. 1, the CMP conditioning disk 10 can include the shank base 100, the primary molding layer 200, the secondary molding layer 300, and the diamonds 400. Here, the molding layer is defined and used as a term to indicate that not only the powder state before the heat treatment but also the brazing or sintering state after the heat treatment are regions that are differentiated into primary and secondary. When it is necessary to distinguish between before and after the heat treatment, it is expressed as the molding layer before the heat treatment and the molding layer or fusion layer after the heat treatment (brazing layer, brazing layer mixed use), or sintered layer.

[0033] Specifically, the shank base 100 may be a backing plate of the CMP conditioning disk 10. A primary molding layer 200 may be formed on the outer surface (surface) of the shank base 100. The shank base 100 corresponds to a normal shank used in a CMP conditioning disk, and therefore a detailed description thereof will be omitted.

[0034] The primary molding layer 200 may be a fixing layer for primarily fixing a plurality of diamonds 400 to the outer surface of the shank base 100. As an example, the primary molding layer 200 may be a brazing layer formed on the outer surface of the shank base 100 by a brazing process (first brazing process). In the present embodiment, the primary molding layer 200 is described as a brazing layer, but is not limited thereto, and the primary molding layer 200 may be a sintered layer formed on the outer surface of the shank base 100 by a sintering process. In the primary molding layer 200, a plurality of diamonds 400 may be arranged in a regular pattern of rows and columns and primarily fixed (temporarily fixed).

[0035] The primary molding layer 200 before the heat treatment may include a primary metal powder layer 210 and an adhesive layer 220. The adhesive layer 220 may be a coating layer of an adhesive for temporarily fixing (temporarily fixing) the diamonds 400 to the primary metal powder layer 210. A plurality of diamonds 400 may be arranged and temporarily fixed in the primary metal powder layer 210 to which the adhesive layer 220 is applied. The primary metal powder layer 210 may be applied to the outer surface of the shank base 100 and pre-sintered. The thickness of the primary molding layer may vary depending on the average size of the diamonds used. Generally, #60, #80, #100, and #120 diamonds are mainly used in CMP PAD Conditioners. As an example, when using #80 diamonds with a diameter range of 151 μm to 197 μm and an average diameter of about 170 μm, the thickness of the primary molded layer 200 may be 20 μm to 100 μm before brazing (before fusing) and 14 μm to 70 μm after brazing (after fusing). The thickness of the molded layer may vary proportionally depending on the average size of the diamonds.

[0036] 2, the thickness L2 from the outer surface of the primary molding layer 200 to the outer surface of the secondary molding layer 300 may be thicker than the thickness L1 between the outer surface of the primary molding layer 200 and the outer surface of the shank base 100. When the thickness L2 from the outer surface of the primary molding layer 200 to the outer surface of the secondary molding layer 300 is thicker than the thickness L1 from the outer surface of the primary molding layer 200 to the outer surface of the shank base 100, the central lower part of the diamond 400 is completely fixed by the primary molding layer 200, so when the diamond 400 is filled and fixed by the secondary molding layer 300, the diamond 400 can maintain a stable arrangement by the primary molding layer 200 and the secondary molding layer 300.

[0037] In the case of the fusion process, the melting point of the primary molding layer 200 may be the same as that of the secondary molding layer 300, or may be higher than that of the secondary molding layer 300. If the melting point of the primary molding layer 200 is higher than that of the secondary molding layer 300, the primary molding layer 200 can be heat treated at a higher temperature than the secondary molding layer 300. In particular, if the melting point of the primary molding layer 200 is higher than that of the secondary molding layer 300, the primary molding layer 200 can further suppress the position movement of the diamond 400 during the brazing process for the secondary molding layer 300. If the components of the primary molding layer 200 are made of components having a higher melting point than the components of the secondary molding layer 300, even if the entire secondary molding layer 300 is liquefied during the brazing process for the secondary molding layer 300, the primary molding layer 200 can have a high viscosity or exist in a sintered state (including a solid phase). As an example, the brazing temperature for forming the primary molded layer 200 may be 900° C. to 1300° C., and the brazing pressure may be 10×10 -3 Pa~10×10 -2 On the other hand, when the primary molded layer is formed by a sintering process, the heat treatment temperature of the primary molded layer 200 may be different from the heat treatment temperature of the secondary molded layer 300.

[0038] The secondary molding layer 300 may be a fixing layer for secondarily fixing a plurality of diamonds 400 to the outer surface of the shank base 100. As an example, the secondary molding layer 300 may be a brazing layer formed on the outer surface of the primary molding layer 200 by a brazing process (second brazing process). The secondary molding layer 300 may be a secondary metal powder layer for completely fixing the diamonds 400. The secondary metal powder layer may be the same component as the primary metal powder layer 210 of the primary molding layer 200. In the present embodiment, the secondary metal powder layer has been described as having the same component as the primary metal powder layer 210 of the primary molding layer 200, but is not limited thereto, and the component of the secondary metal powder layer may be different from the component of the primary metal powder layer 210. When the component of the secondary metal powder layer is different from the component of the primary metal powder layer 210, the melting points of the primary molding layer 200 and the secondary molding layer 300 can be adjusted to be different from each other.

[0039] The secondary molding layer 300 may undergo a heat treatment process in which it is heated to a preset temperature range. In a state in which the plurality of diamonds 400 are temporarily fixed by the primary molding layer 200, the plurality of diamonds 400 may be completely fixed to the secondary molding layer 300 in a regular form of rows and columns. As an example, when using #80 diamond particles with an average size of 170 μm, the thickness of the secondary molding layer 300 may be 100 μm to 250 μm before brazing (before fusion) and 70 μm to 175 μm after brazing (after fusion).

[0040] The diamond 400 may be provided in a plurality of pieces arranged in a regular pattern in the primary molding layer 200 and the secondary molding layer 300. At least a portion of the diamond 400 may be exposed from the secondary molding layer 300. The diamond 400 may be pre-sintered in the primary molding layer 200, and the position (direction) of the diamond 400 may be adjusted by a separate suction pressure device (not shown) so that the diamond 400 is in an upright state. Of course, the position and position of the diamond 400 may move partially during the heat treatment of the primary molding layer 200 and the heat treatment of the secondary molding layer 300 proceed sequentially, but the movement of the position and position of the diamond 400 can be minimized by two processes (e.g., brazing process) for forming the primary molding layer 200 and the secondary molding layer 300.

[0041] As shown in FIG. 4A, at least a part of the diamond 400 exposed from the secondary molding layer 300 may be a polishing part 400b located at the upper end of the long axis. The diamond 400 can be divided into a body part 400a filled in the primary molding layer 200 and the secondary molding layer 300, and a polishing part 400b protruding from the secondary molding layer 300 to the outside. In this embodiment, a virtual line connecting two vertices that are opposed to each other and are farthest from each other among the multiple vertices of one diamond 400 is defined as an "axis", and the axis with the longest length among the multiple "axes" is defined as a "long axis".

[0042] As shown in FIG. 4A, FIG. 5A and FIG. 6A, the polished portion 400b of the diamond 400 can be located at the same height as the polished portion 400b of other diamonds 400 as much as possible. In other words, the length of the diamond 400 exposed from the secondary molding layer 300 can be approximately uniform throughout the diamond 400. In this embodiment, the ratio of the polished portion 400b of the diamond 400 located within a range of 50 μm in height difference among the multiple diamonds 400 may be 80% or more relative to the total number of diamonds 400, but is not limited thereto. Under optimal conditions, the ratio of the polished portion 400b of the diamond 400 located within a range of 50 μm in height difference can approach 100% relative to the total number of diamonds 400.

[0043] The diamond 400 may be positioned in the primary molding layer 200 and the secondary molding layer 300 in an upright position from the top end of the long axis downward. As an example, the diamond 400 may be disposed in the primary molding layer 200 and the secondary molding layer 300 at an angle (for example, an angle of more than 50° and less than 90°) that stands up relative to the shank base 100. When the diamond 400 stands up relative to the shank base 100, the apex of the lower end of the diamond 400 in the long axis direction may be in point or line contact with the surface of the shank base 100 or may be separated by a predetermined distance. As the long axis of the diamond 400 approaches 90° relative to the shank base 100, the diamond 400 makes point or line contact with the polishing pad, and the polishing performance of the diamond 400 may be significantly increased.

[0044] 3, the diamond 400 is arranged at an angle with its long axis standing upright with respect to the shank base 100, so the wetting angle (θ) where the surface of the diamond 400 meets the surface of the secondary molded layer 300 must be smaller than 90°, and preferably smaller than 60°. The components of the secondary molded layer 300 and the heat treatment conditions must be configured so that the wetting angle θ is smaller than the upward force F V and the downward force F D and the lateral force F LThis can be determined by the vertical component force, as shown in the following [Equation 1]. [Formula 1] F V =F D +F L cosθ

[0045] When the wetting angle θ exceeds 90°, F L Since the vertical component of the force is in the upward direction, the diamond 400 receives a larger buoyancy and may float further. When the wetting angle θ is less than 90°, the force F L The direction of the vertical component of the force changes to a downward direction, and the diamond 400 receives a downward force. If the wetting angle θ is greater than 90°, the diamond 400 may move away from the shank base 100 due to buoyancy, and the secondary molding layer 300 may not be able to properly support the diamond 400, increasing the risk of the diamond 400 falling off, and a chip pocket for discharging debris generated during polishing is not formed in the bonding layer, preventing proper discharge of debris, which may significantly reduce polishing performance.

[0046] The diamond 400 can finely polish the polishing pad P by the polishing portions 400b protruding from the secondary molding layer 300, but in this embodiment, the polishing portions 400b of multiple diamonds 400 protrude from the secondary molding layer 300 at uniform intervals and uniform heights, so that the polishing pad P can be effectively polished.

[0047] On the other hand, in the case of a conventional CMP conditioning disk 1, as shown in Figures 4B, 5B, and 6B, the abrasive parts 1-3b protruding from the brazing layer 1-2 in the body part 1-3a are arranged on the brazing layer 1-2 of the shank 1-1 at irregular intervals and with non-uniform heights, and therefore the durability, pad abrasive characteristics (PCR: Pad cut rate), etc. may be lower than those of the CMP conditioning disk 10 of the present invention. As a result of testing, as shown in Figure 7, it was confirmed that the CMP conditioning disk 10 of the present invention provides an effect of extending the life span by 30% or more compared to the conventional CMP conditioning disk 1.

[0048] Hereinafter, a method for manufacturing a CMP conditioning disk according to an embodiment of the present invention will be described. Fig. 8 is a flow diagram showing a method for manufacturing a CMP conditioning disk according to an embodiment of the present invention. Fig. 9 is a phase diagram showing a method for manufacturing a CMP conditioning disk according to an embodiment of the present invention.

[0049] 8 and 9, a method 20 for manufacturing a CMP conditioning disk according to an embodiment of the present invention may include a step S100 of forming a primary molded layer and a step S200 of forming a secondary molded layer.

[0050] In the primary molding layer forming step S100, the primary molding layer 200 is formed on the outer surface of the shank base 100, and a plurality of diamonds 400 are temporarily fixed to the primary molding layer 200. In the primary molding layer forming step S100, the primary molding layer 200 may be formed by a fusion process. In this embodiment, the primary molding layer forming step S100 includes a brazing process, but is not limited thereto, and the primary molding layer forming step S100 may include a sintering process.

[0051] The primary molded layer forming step S100 may include a primary metal powder layer forming step S110, an adhesive layer forming step S120, and a primary diamond fixing step S130.

[0052] In the first metal powder layer forming step S110, a first metal powder is applied to the outer surface of the shank base 100 and brazed. The first metal powder layer 210 may be applied in a slurry form to the outer surface of the shank base 100 and pre-sintered. For example, in the brazing process of the first metal powder layer 210, when the first metal powder is applied in a powder form to the outer surface of the shank base 100, the first metal powder may be pre-sintered as the first metal powder layer 210.

[0053] In the primary metal powder layer forming step S110, the primary molded layer 200 is provided as a slurry-like primary metal powder layer 210. When the primary metal powder layer 210 is brazed to a thin thickness during the brazing process for the primary metal powder layer 210, the primary metal powder layer 210 can shrink and fix the diamond 400 in a state where the positional movement of the diamond 400 is minimized. The primary metal powder layer 210 may be pre-sintered at a temperature of 600°C to 1000°C. At this time, there is almost no change in the thickness of the primary metal powder layer 210.

[0054] In the step of forming the first metal powder layer (S110), the thickness of the first metal powder layer 210 may be adjusted by polishing after pre-sintering the first metal powder layer 210. When the thickness of the first metal powder layer is thin, the lower end of the diamond 400 may be located as close as possible to the outer surface of the shank base 100 when the diamond 400 is separated from the outer surface of the shank base 100.

[0055] In the adhesive layer forming step S120, an adhesive layer 220 is formed on the outer surface of the primary metal powder layer 210. The adhesive layer 220 may be formed by applying an adhesive in a slurry form to the outer surface of the primary metal powder layer 210 (spray form).

[0056] In the primary diamond fixing step S130, a plurality of diamonds 400 are fixed to the primary molding layer 200. For example, the plurality of diamonds 400 can be pressed into the inside of the pre-sintered layer of the primary metal powder layer 210 and fixed by the adhesive layer 220.

[0057] In the primary diamond fixing step S130, the diamonds 400 may be primarily fixed (temporarily fixed) in a standing state on the primary molding layer 200 in a regular pattern of rows and columns. The diamonds 400 may be directional controlled by a separate suction pressurizing device. For example, the diamonds 400 may be arranged at an angle to stand on the primary molding layer 200 by the suction pressurizing device. The suction pressurizing device presses the diamonds 400 on the primary molding layer 200 in a state where the diamonds 400 are temporarily held in a regular pattern of rows and columns, and then releases the holding of the diamonds 400, thereby primarily fixing the diamonds 400 on the primary molding layer 200. If the direction control of the diamonds 400 is not required, the diamonds 400 may be fixed to the surface of the primary metal powder layer 210 or the pre-sintered layer with an adhesive. In this case, since the thickness of the primary molding layer 200 is thin, the movement of the position and direction of the diamonds 400 can be minimized.

[0058] In the primary diamond fixing step S130, the plurality of diamonds 400 may be heat-treated while being fixed to the primary molding layer 200. At this time, the heat treatment temperature may be 1000°C to 1300°C. The heat treatment temperature may be the same as or different from the heat treatment temperature of the secondary molding layer 300. At this time, the thickness of the primary molding layer 200 may be reduced by about 30%. (This thickness is the thickness of the primary molding layer after brazing.)

[0059] When the primary diamond fixing step S130 is completed, the diamond can be fixed in a state where the movement of the position or direction is minimized while contacting or being close to the shank base 100. Even if the density of the primary molding layer 200 is about twice as high as that of the diamond, the thickness of the primary molding layer after the heat treatment is thinner than half the size of the diamond, so that the position movement of the diamond can be minimized.

[0060] In the secondary molding layer forming step S200, the secondary molding layer 300 may be formed on the outer surface of the primary molding layer 200, and an environment may be provided for at least a portion of the diamond 400 to be exposed from the secondary molding layer 300. In the secondary molding layer forming step S200, the secondary molding layer 300 may be formed by a brazing process. The secondary molding layer forming step S200 may include a secondary metal powder layer forming step S210, a polishing step S220, and a secondary diamond fixing step S230.

[0061] In the step of forming a secondary metal powder layer (S210), the secondary molded layer 300 is brazed by providing a secondary metal powder layer on the outer surface of the primary molded layer 200. In the brazing process of the secondary molded layer 300, when the secondary metal powder is applied to the outer surface of the primary molded layer 200, the secondary metal powder can be pre-sintered as the secondary molded layer 300.

[0062] In the polishing step S220, the secondary molded layer 300 is dry polished, so that at least a part of the diamond 400 is exposed from the secondary molded layer 300. In this embodiment, the pressure for dry polishing the secondary molded layer 300 may be 0 Psi to 3 Psi, and the rotation speed for polishing may be 30 RPM to 130 RPM.

[0063] In the secondary diamond fixing step S230, a heat treatment process is provided to shrink the dry-polished secondary molding layer 300. The plurality of diamonds 400 can be finally and completely fixed in the secondary molding layer 300 by the heat treatment process. The heat treatment temperature may be 1000°C to 1300°C. During the heat treatment process, the thickness of the secondary molding layer 300 is reduced, and the diamonds can relatively protrude from the secondary molding layer 300. In a state where the diamond fixing step S130 of the primary molding layer 200 is completed, the diamond is in a state of being fixed in contact with or in close proximity to the shank base 100, so that even if remelting occurs in a portion of the primary molding layer 200, further shrinkage does not occur in the primary molding layer 200. Therefore, the positional movement of the diamond 400 is suppressed, and even if the secondary molding layer 300 melts by brazing and shrinks in thickness, the movement of the diamond can be minimized.

[0064] As described above, in the present invention, the primary molding layer is already shrunk by the primary and secondary molding layer forming steps, so there is no change in volume (thickness) during the secondary heat treatment, and the movement of diamond can be suppressed. In particular, if the components of the primary molding layer and the secondary molding layer are different, the movement of diamond can be suppressed more effectively when the viscosity is high even if the solid phase, liquid phase sintering state, or 100% liquefaction is performed in the secondary molding process. [Explanation of symbols]

[0065] 10: CMP conditioning disk, 100: shank base, 200: primary molding layer, 210: primary metal powder layer, 220: adhesive layer, 300: secondary molding layer, 400: diamond, 400a: body portion, 400b: polishing portion

Claims

1. forming a primary molding layer on an outer surface of the shank base and disposing a plurality of diamonds on the primary molding layer; A secondary molding layer is formed on the upper surface of the primary molding layer, and at least a part of the diamond is exposed from the secondary molding layer. A method for making a CMP conditioning disk.

2. The primary molding layer forming step includes: forming the primary molding layer by a brazing process or a sintering process; The secondary molding layer forming step includes: Forming the secondary molded layer by a brazing process; A method for producing the CMP conditioning disk of claim 1.

3. The primary molding layer forming step includes: a first metal powder layer forming step of forming a first metal powder layer on an outer surface of the shank base and pre-sintering the first metal powder layer; forming an adhesive layer on an outer surface of the first metal powder layer; a primary diamond fixing step of provisionally fixing the diamond to an outer surface of the adhesive layer; A method for producing the CMP conditioning disk of claim 1.

4. The primary diamond fixing step comprises: Fixing a plurality of diamonds to the primary molding layer so as to maintain an upright position downward from an upper end of a long axis; A method for producing the CMP conditioning disk of claim 3.

5. The primary diamond fixing step comprises: The method includes temporarily holding the plurality of diamonds in a regular row and column arrangement in a suction and pressurization device, and pressing and fixing the plurality of diamonds onto the primary molding layer using the suction and pressurization device so that the plurality of diamonds maintain an upright posture. A method for producing the CMP conditioning disk of claim 4.

6. The secondary molding layer forming step includes: forming a secondary metal powder layer on an outer surface of the primary molding layer by pre-sintering a secondary metal powder layer to form a secondary molding layer; A polishing step of dry polishing the secondary layer to cover all of the diamonds or to expose at least a portion of the diamonds. A method for producing the CMP conditioning disk of claim 1.

7. The secondary molding layer forming step includes: Further comprising a secondary diamond fixing step of completely fixing the diamond to the secondary molded layer by shrinkage of the dry polished secondary molded layer. A method for producing the CMP conditioning disk of claim 6.

8. Shank base, A primary molding layer formed on an outer surface of the shank base; A secondary molding layer formed on the outer surface of the primary molding layer; and Diamonds arranged to be filled in the primary molding layer and the secondary molding layer; Including, The CMP conditioning disk has a plurality of diamonds, at least a portion of which is exposed from the secondary molding layer.

9. The plurality of diamonds are are spaced apart in rows and columns on the outer surface of the secondary layer; The exposed portions are exposed from the outer surface of the secondary molding layer to have the same exposed height.

9. The CMP conditioning disk of claim 8.

10. The primary molding layer is The secondary layer is formed with a melting point equal to, lower than, or higher than that of the secondary layer.

9. The CMP conditioning disk of claim 8.

11. The thickness from the outer surface of the primary molding layer to the outer surface of the secondary molding layer is a thickness greater than a thickness between an outer surface of the primary molding layer and an outer surface of the shank base; 9. The CMP conditioning disk of claim 8.

12. A CMP conditioning disk manufactured by the method according to any one of claims 1 to 7.

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