Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method that removes, with a simpler configuration, a rinsing liquid that has entered a recess from a substrate.SOLUTION: A substrate processing method includes: a first chemical liquid step (step S2) of supplying a first chemical liquid to a substrate W; a rinsing step (step S3) of supplying a rinsing liquid to the substrate W; a removing step (step S4) of rotating the substrate W while stopping the supply of the rinsing liquid to discharge the rinsing liquid from a recess 320; and a second chemical liquid step (step S5) of supplying a second chemical liquid to the substrate W from which the rinsing liquid has been removed. In the first chemical liquid step (step S2), a first guard 61a receives the first chemical liquid discharged from the rotating substrate W. In the rinsing step (step S3), the first guard 61a is replaced with a second guard 61b. In the removing step (step S4) and the second chemical liquid step (step S5), the second guard 61b receives the first rinsing liquid and the second chemical liquid discharged from the rotating substrate W.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a substrate processing method and a substrate processing apparatus for processing a substrate having a pattern including recesses. Specifically, Patent Document 1 discloses a substrate processing method using a single-wafer processing apparatus and the single-wafer processing apparatus. Patent Document 1 discloses that after the cleaning process, a removal step is performed to remove the processing liquid that has entered the recesses from the substrate. Patent Document 1 also discloses that an etching step is performed after the removal step.

[0003] In detail, Patent Document 1 discloses that in a single wafer processing apparatus, the substrate is exposed to vapor of IPA (isopropyl alcohol) to dry the substrate, thereby removing the processing liquid from the substrate. Patent Document 1 also discloses that the atmosphere around the substrate is made a nitrogen gas atmosphere during the removal process. According to the technology disclosed in Patent Document 1, by making the atmosphere around the substrate a nitrogen gas atmosphere, it is possible to prevent the formation of a natural oxide film on the substrate surface. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2020-35777 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, according to the substrate processing method and substrate processing apparatus of Patent Document 1, in order to remove the processing liquid that has entered the recesses from the substrate, a configuration for supplying IPA vapor and a configuration for supplying nitrogen gas are required. This makes the configuration complicated. Therefore, there is room for further improvement in the technology for removing the processing liquid that has entered the recesses from the substrate.

[0006] The present invention has been made in consideration of the above-mentioned problems, and its object is to provide a substrate processing method and a substrate processing apparatus capable of removing rinsing liquid that has entered a recess from a substrate with a simpler configuration. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing method is a method for processing a substrate having a pattern including recesses. The method includes a first chemical liquid step of supplying a first chemical liquid to the substrate, a rinsing step of supplying a first rinse liquid to the substrate, a removing step of rotating the substrate while stopping the supply of the first rinse liquid to drain the first rinse liquid from the recesses and remove the first rinse liquid from the substrate, and a second chemical liquid step of supplying a second chemical liquid to the substrate from which the first rinse liquid has been removed. In the first chemical liquid step, the first chemical liquid is supplied to the rotating substrate, and the first chemical liquid discharged from the substrate is received by a first guard surrounding the substrate. In the rinsing step, the guard surrounding the substrate is replaced from the first guard to a second guard. In the removing step, the first rinse liquid discharged from the rotating substrate is received by the second guard. In the second chemical liquid step, the second chemical liquid is supplied to the rotating substrate, and the second chemical liquid discharged from the rotating substrate is received by the second guard.

[0008] In one embodiment, the rinsing step includes a step of supplying the first rinsing liquid to the rotating substrate, and a puddling step of holding a liquid film of the first rinsing liquid on the substrate, wherein the guard surrounding the substrate is replaced with the second guard from the first guard in the puddling step.

[0009] In one embodiment, in the removing step and the second chemical liquid step, the first rinsing liquid and the second chemical liquid received by the second guard are collected.

[0010] In one embodiment, in the removing step, the substrate is rotated at a rotation speed equal to the rotation speed of the substrate at the start of the second chemical liquid step.

[0011] In one embodiment, the rinsing step is a first rinsing step. The above substrate processing method further includes a second rinsing step of supplying a second rinsing liquid to the rotating substrate to rinse the second chemical liquid from the substrate, and a drying step of increasing the rotation speed of the substrate to dry the substrate. In the removing step, the substrate is rotated at a rotation speed lower than the rotation speed at which the substrate is rotated in the drying step.

[0012] In one embodiment, the rinsing step is a first rinsing step. The above substrate processing method further includes a second rinsing step of supplying a second rinsing liquid to the rotating substrate to rinse the second chemical liquid from the substrate, and a drying step of increasing the rotation speed of the substrate to dry the substrate. The length of time of the removing step is shorter than the length of time of the drying step.

[0013] In one embodiment, the pattern includes a multi-layer stack structure in which polysilicon layers and silicon oxide layers are alternately stacked.

[0014] In one embodiment, the multi-layer laminate structure comprises a laminate structure of 80 or more layers.

[0015] In one embodiment, the recess is recessed in a stacking direction in which the polysilicon layers and the silicon oxide layers are alternately stacked. The second chemical solution step includes a step of etching the polysilicon layer to form a recessed portion on an inner side surface of the recess.

[0016] In one embodiment, the first chemical liquid includes an acidic chemical liquid, and the second chemical liquid includes an alkaline chemical liquid.

[0017] According to another aspect of the present invention, a substrate processing apparatus processes a substrate having a pattern including a recess. The substrate processing apparatus includes a substrate holding unit, a substrate rotating unit, a processing liquid supply unit, a plurality of guards, a lifting unit, and a control unit. The substrate holding unit holds the substrate horizontally. The substrate rotating unit rotates the substrate holding unit around a central axis extending in a vertical direction, thereby rotating the substrate integrally with the substrate holding unit. The processing liquid supply unit supplies the processing liquid to the substrate. The plurality of guards surround the substrate and receive the processing liquid discharged from the substrate. The lifting unit lifts and lowers the plurality of guards individually to replace the guard surrounding the substrate among the plurality of guards. The control unit controls the substrate rotating unit, the processing liquid supply unit, and the lifting unit. The processing liquid includes a first chemical liquid, a first rinse liquid, and a second chemical liquid. The plurality of guards include a first guard and a second guard. The control unit performs a first chemical liquid process of controlling the processing liquid supply unit to supply the first chemical liquid to the substrate, a rinsing process of controlling the processing liquid supply unit to supply the first rinse liquid to the substrate, a removal process of controlling the processing liquid supply unit to stop supply of the first rinse liquid and control the substrate rotation unit to rotate the substrate and discharge the first rinse liquid from the recessed portion to remove the first rinse liquid from the substrate, a second chemical liquid process of controlling the processing liquid supply unit to supply the second chemical liquid to the substrate from which the first rinse liquid has been removed, and a second chemical liquid process of controlling the substrate rotation unit to stop supply of the first rinse liquid. a process of controlling the lifting unit to rotate the substrate during the first chemical liquid processing, the rinsing processing, and the second chemical liquid processing, a process of controlling the lifting unit to cause the first guard to receive the first chemical liquid discharged from the rotating substrate during the first chemical liquid processing, and a process of controlling the lifting unit to switch the guard surrounding the substrate from the first guard to the second guard during the rinsing processing, and cause the second guard to receive the first rinsing liquid and the second chemical liquid discharged from the rotating substrate during the removal processing and the second chemical liquid processing.

[0018] In one embodiment, the rinsing process includes a process of controlling the substrate rotation unit to rotate the substrate while controlling the processing liquid supply unit to supply the first rinsing liquid to the rotating substrate, and a puddle process of maintaining a liquid film of the first rinsing liquid on the substrate. During the puddle process, the control unit controls the lifting unit to switch the guard surrounding the substrate from the first guard to the second guard.

[0019] In one embodiment, the substrate processing apparatus further includes a recovery unit that recovers the first rinsing liquid and the second chemical liquid received by the second guard.

[0020] In one embodiment, the control unit controls the substrate rotation unit to rotate the substrate, during the removal process, at a rotation speed equal to the rotation speed of the substrate at the start of the second chemical liquid process.

[0021] In one embodiment, the rinsing process is a first rinsing process. The control unit further performs a second rinsing process in which, while controlling the substrate rotation unit to rotate the substrate, the control unit controls the processing liquid supply unit to supply a second rinsing liquid to the substrate to rinse the second chemical liquid from the substrate, and a drying process in which the control unit controls the substrate rotation unit to increase the rotation speed of the substrate to dry the substrate. The control unit controls the substrate rotation unit to rotate the substrate at a rotation speed lower than the rotation speed of the substrate during the drying process during the removal process.

[0022] In one embodiment, the rinsing process is a first rinsing process. The control unit further performs a second rinsing process in which the processing liquid supply unit supplies a second rinsing liquid to the substrate while controlling the substrate rotation unit to rotate the substrate, thereby rinsing the second chemical liquid from the substrate, and a drying process in which the substrate rotation unit increases the rotation speed of the substrate to dry the substrate. The control unit performs the removal process in a shorter time than the drying process.

[0023] In one embodiment, the pattern includes a multi-layer stack structure in which polysilicon layers and silicon oxide layers are alternately stacked.

[0024] In one embodiment, the multi-layer laminate structure comprises a laminate structure of 80 or more layers.

[0025] In one embodiment, the recess is recessed in a stacking direction in which the polysilicon layers and the silicon oxide layers are alternately stacked, and the control unit etches the polysilicon layer by the second chemical solution treatment to form a depression on an inner surface of the recess.

[0026] In one embodiment, the first chemical liquid includes an acidic chemical liquid, and the second chemical liquid includes an alkaline chemical liquid. Effect of the Invention

[0027] According to the substrate processing method and substrate processing apparatus of the present invention, the rinsing liquid that has entered the recessed portion can be removed from the substrate with a simpler configuration. [Brief description of the drawings]

[0028] [Figure 1] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] 1 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to an embodiment of the present invention. [Diagram 3] 11 is a diagram showing a movement locus of a second discharge nozzle included in the substrate processing apparatus according to the embodiment of the present invention. FIG. [Figure 4] 1A is an enlarged plan view that illustrates an example of a substrate to be processed by the substrate processing apparatus according to an embodiment of the present invention, and FIG. 1B is an enlarged cross-sectional view that illustrates an example of a substrate to be processed by the substrate processing apparatus according to an embodiment of the present invention. [Diagram 5]1A is an enlarged cross-sectional view showing a schematic view of a portion of a substrate to which a first chemical liquid has been supplied, FIG. 1B is an enlarged cross-sectional view showing a schematic view of a portion of a substrate to which a second chemical liquid has been supplied, and FIG. 1C is an enlarged cross-sectional view showing a schematic view of a portion of a substrate after substrate processing. [Figure 6] 2 is a flowchart showing a flow of a substrate processing method according to an embodiment of the present invention. [Figure 7] 1A is a schematic diagram of a substrate processing section during processing with a first chemical liquid, and FIG. 1B is an enlarged cross-sectional view showing a schematic diagram of a portion of a substrate during processing with the first chemical liquid. [Figure 8] 1A is a schematic diagram illustrating a first state of a substrate processing section during a first rinsing process, and FIG. 1B is an enlarged cross-sectional view illustrating a schematic diagram of a portion of a substrate during the first rinsing process. [Figure 9] 1A is a schematic diagram showing a second state of the substrate processing section during a first rinsing process, and FIG. 1B is a schematic diagram showing a third state of the substrate processing section during a first rinsing process. [Figure 10] FIG. 2 is a diagram illustrating a substrate processing section during a removal process. [Figure 11] 1A is a schematic diagram of the substrate processing section upon completion of the removal process, and FIG. 1B is an enlarged cross-sectional view of a portion of the substrate upon completion of the removal process. [Figure 12] 1A is a schematic diagram of the substrate processing section at the start of a second chemical liquid processing, and FIG. 1B is an enlarged cross-sectional view showing a schematic diagram of a portion of the substrate during the second chemical liquid processing. [Figure 13] FIG. 2 is a diagram illustrating a substrate processing section during a scan process. [Figure 14] FIG. 4 is a diagram illustrating a substrate processing section during a second rinsing process. [Figure 15] FIG. 2 is a diagram showing a schematic view of a substrate processing section during a drying process. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] Hereinafter, embodiments of the substrate processing method and substrate processing apparatus of the present invention will be described with reference to the drawings (FIGS. 1 to 15). However, the present invention is not limited to the following embodiments, and can be embodied in various forms without departing from the gist of the present invention. Note that where explanations are repeated, they may be omitted as appropriate. Also, in the drawings, the same or corresponding parts are denoted by the same reference symbols, and explanations will not be repeated.

[0030] The "substrate" to be processed in the substrate processing method and substrate processing apparatus according to the present invention can be a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk. In the following, an embodiment of the present invention will be described mainly taking as an example a case in which a disk-shaped semiconductor wafer is the substrate to be processed, but the substrate processing method and substrate processing apparatus according to the present invention can be similarly applied to various substrates other than the above-mentioned semiconductor wafer. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing method and substrate processing apparatus according to the present invention can be applied to substrates of various shapes.

[0031] Fig. 1 is a schematic diagram of a substrate processing apparatus 100 according to the present embodiment. More specifically, Fig. 1 is a schematic plan view of the substrate processing apparatus 100. The substrate processing apparatus 100 processes substrates W using a plurality of types of processing liquids. More specifically, the substrate processing apparatus 100 is a single-wafer processing apparatus, and processes substrates W one by one.

[0032] As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 200, a fluid cabinet 101, a plurality of fluid boxes 102, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a controller 10.

[0033] Each of the load ports LP accommodates a stack of multiple substrates W. Each of the substrates W has a pattern PT including multiple recesses 320 (see FIGS. 4(a) and 4(b)). For example, the substrates W (semiconductor wafers) include substrates used in the manufacture of semiconductor products having a three-dimensional structure, such as three-dimensional flash memories (e.g., three-dimensional NAND flash memories).

[0034] The indexer robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transports the substrate W between the indexer robot IR and the substrate processing unit 200. Note that a mounting stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the apparatus may be configured to indirectly transfer the substrate W between the indexer robot IR and the center robot CR via the mounting stage.

[0035] The substrate processing units 200 form a plurality of towers TW (four towers TW in FIG. 1). The towers TW are arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 200 (three substrate processing units 200 in FIG. 1) stacked vertically.

[0036] The fluid cabinet 101 contains a processing liquid. Each of the fluid boxes 102 corresponds to one of the towers TW. The processing liquid in the fluid cabinet 101 is supplied to all of the substrate processing units 200 included in the tower TW corresponding to the fluid box 102 via one of the fluid boxes 102.

[0037] Each of the substrate processing units 200 processes the substrate W using a plurality of types of processing liquids. That is, each of the substrate processing units 200 performs substrate processing on the substrate W. Specifically, each of the substrate processing units 200 sequentially supplies a plurality of types of processing liquids to the substrate W to process the substrate W. The plurality of types of processing liquids include a first chemical liquid, a second chemical liquid, and a rinsing liquid. In this embodiment, the first chemical liquid is an acidic chemical liquid. The second chemical liquid is an alkaline chemical liquid. The first chemical liquid includes, for example, DHF (diluted hydrofluoric acid) or BHF (buffered hydrofluoric acid). The second chemical liquid includes, for example, tetramethylammonium hydroxide (TMAH). In this embodiment, the first chemical liquid is DHF. The second chemical liquid is TMAH.

[0038] In this embodiment, each of the substrate processing units 200 performs an etching process on the substrate W. Specifically, each of the substrate processing units 200 removes the native oxide film 340 from the surface of the substrate W using a first chemical liquid (DHF), and then etches the substrate W using a second chemical liquid (TMAH). More specifically, the substrate W includes a polysilicon layer 332 (see FIG. 4(b)). Each of the substrate processing units 200 etches the polysilicon layer 332 using the second chemical liquid (TMAH).

[0039] In this embodiment, the rinse liquid is deionized water (DIW). In other words, the rinse liquid is so-called "ultrapure water". However, the rinse liquid is not limited to deionized water. For example, the rinse liquid may be carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm).

[0040] The controller 10 controls the operation of each part of the substrate processing apparatus 100. For example, the controller 10 controls the substrate processing unit 200, the load port LP, the indexer robot IR, and the center robot CR. The controller 10 includes a control unit 11 and a storage unit 12.

[0041] The control unit 11 controls the operation of each unit of the substrate processing apparatus 100 based on various information stored in the storage unit 12. The control unit 11 has, for example, a processor. The control unit 11 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor. Alternatively, the control unit 11 may have a general-purpose computing device or a dedicated computing device.

[0042] The storage unit 12 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 12 stores various data and various computer programs. The various data includes recipe data. The recipe data indicates a recipe that specifies the processing content, processing conditions, and processing procedure of the substrate W. In the recipe, various setting values ​​for performing substrate processing are set as processing conditions.

[0043] The storage unit 12 includes a main storage device. The main storage device includes, for example, a semiconductor memory. The storage unit 12 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 12 may include a removable medium.

[0044] Next, the substrate processing apparatus 100 of this embodiment will be further described with reference to Figures 1 and 2. Figure 2 is a cross-sectional view that typically shows the configuration of a substrate processing section 200 included in the substrate processing apparatus 100 of this embodiment.

[0045] 2, the substrate processing apparatus 200 includes a processing chamber 201, a substrate holding unit 2, a substrate rotating unit 3, a processing liquid supplying unit 4, a first nozzle moving unit 51, a second nozzle moving unit 52, a plurality of guard units 6, and an elevation unit 7. The substrate processing apparatus 100 further includes a draining unit 8 and a recovery unit 9.

[0046] The substrate W is loaded into the processing chamber 201 and processed therein. The processing chamber 201 has a substantially box-like shape. The processing chamber 201 accommodates a substrate holding unit 2, a substrate rotating unit 3, part of the processing liquid supply unit 4, a first nozzle moving unit 51, a second nozzle moving unit 52, a plurality of guard units 6, a lifting unit 7, part of the drainage unit 8, and part of the recovery unit 9. The processing chamber 201 is, for example, a chamber.

[0047] The substrate holding part 2 holds the substrate W horizontally. The substrate holding part 2 is controlled by a control device 10 (control part 11). The substrate holding part 2 is, for example, a spin chuck. As shown in FIG. 2, the substrate holding part 2 may have a spin base 21 and a plurality of chuck members 22.

[0048] The spin base 21 is substantially disk-shaped and supports a plurality of chuck members 22 in a horizontal position. The plurality of chuck members 22 are arranged on the periphery of the spin base 21. The plurality of chuck members 22 clamp the periphery of the substrate W. The substrate W is held in a horizontal position by the plurality of chuck members 22. The operation of the plurality of chuck members 22 is controlled by the control device 10 (control unit 11). The plurality of chuck members 22 are arranged so that the center of the substrate W coincides with the center of the spin base 21.

[0049] The substrate rotating unit 3 rotates the substrate holding unit 2 about a first axis of rotation AX1 extending in the up-down direction D1, thereby rotating the substrate W integrally with the substrate holding unit 2. More specifically, the first axis of rotation AX1 passes through the center of the spin base 21. Therefore, the spin base 21 rotates about the center of the spin base 21. As already explained, the substrate holding unit 2 holds the substrate W such that the center of the substrate W coincides with the center of the spin base 21. Therefore, the substrate W rotates about the center of the substrate W. The first axis of rotation AX1 is an example of a "central axis". The substrate rotating unit 3 is controlled by the control device 10 (control unit 11).

[0050] 2, the substrate rotating unit 3 may have, for example, a motor body 31 and a shaft 32. The shaft 32 is coupled to the spin base 21. The motor body 31 rotates the shaft 32. As a result, the spin base 21 rotates. The operation of the motor body 31 is controlled by the control device 10 (control unit 11).

[0051] The processing liquid supply unit 4 supplies a plurality of types of processing liquid to the substrate W. The processing liquid supply unit 4 is controlled by the control device 10 (control unit 11). Specifically, the processing liquid supply unit 4 includes a first chemical liquid supply unit 41, a second chemical liquid supply unit 42, and a rinsing liquid supply unit 43.

[0052] The first chemical liquid supplying unit 41 is controlled by the control device 10 (control unit 11) to supply the first chemical liquid to the substrate W held by the substrate holding unit 2. More specifically, the first chemical liquid supplying unit 41 supplies the first chemical liquid to the rotating substrate W. In the present embodiment, the first chemical liquid supplying unit 41 supplies DHF to the substrate W.

[0053] Specifically, as shown in FIG. 2, the first chemical liquid supply unit 41 has a first discharge nozzle 41a, a first chemical liquid supply pipe 41b, and a first chemical liquid on-off valve 41c. The processing chamber 201 accommodates the first discharge nozzle 41a and a part of the first chemical liquid supply pipe 41b. In this embodiment, the first chemical liquid on-off valve 41c is disposed outside the processing chamber 201. Specifically, the first chemical liquid on-off valve 41c is accommodated in the fluid box 102 described with reference to FIG. 1. In addition, the first chemical liquid supply pipe 41b is introduced from the outside to the inside of the processing chamber 201. Specifically, the first chemical liquid supply pipe 41b is introduced from the fluid box 102 to the inside of the processing chamber 201.

[0054] The first discharge nozzle 41a discharges the first chemical liquid (DHF) from above the rotating substrate W toward the upper surface of the substrate W. As a result, the first chemical liquid is supplied to the substrate W, and a liquid film LF1 of the first chemical liquid is formed on the upper surface of the substrate W.

[0055] The first chemical liquid supply pipe 41b is, for example, a tube. One end of the first chemical liquid supply pipe 41b is connected to the first discharge nozzle 41a. The first chemical liquid supply pipe 41b supplies the first chemical liquid (DHF) to the first discharge nozzle 41a.

[0056] The first chemical liquid on-off valve 41c is provided in the first chemical liquid supply pipe 41b. The first chemical liquid on-off valve 41c controls the supply of the first chemical liquid (DHF) to the first discharge nozzle 41a and the stop of the supply of the first chemical liquid (DHF) to the first discharge nozzle 41a.

[0057] Specifically, the first chemical liquid on-off valve 41c can be switched between an open state and a closed state. The control device 10 (control unit 11) controls the opening and closing operation of the first chemical liquid on-off valve 41c. The actuator of the first chemical liquid on-off valve 41c is, for example, a pneumatic actuator or an electric actuator. When the first chemical liquid on-off valve 41c is in the open state, the first chemical liquid (DHF) flows to the first discharge nozzle 41a via the first chemical liquid supply pipe 41b. On the other hand, when the first chemical liquid on-off valve 41c is in the closed state, the flow of the first chemical liquid via the first chemical liquid supply pipe 41b stops.

[0058] The first nozzle moving part 51 moves the first discharge nozzle 41a along a horizontal plane. The operation of the first nozzle moving part 51 is controlled by the control device 10 (control part 11). More specifically, the first nozzle moving part 51 moves the first discharge nozzle 41a between a first retracted position EP1 (see FIG. 3) and a processing position. The first retracted position EP1 is a position outside the substrate holding part 2. For example, the first retracted position EP1 may be a position outside the multiple guard parts 6. In this embodiment, the processing position of the first discharge nozzle 41a is a position CP (see FIG. 3) facing the center of the substrate W. Hereinafter, the position CP facing the center of the substrate W may be referred to as a "center position CP". The first discharge nozzle 41a supplies the first chemical liquid (DHF) to the substrate W from the center position CP (processing position).

[0059] 2, the first nozzle movement part 51 may have a first nozzle arm 51a, a first nozzle base 51b, and a first nozzle movement mechanism 51c. The first nozzle base 51b extends in the vertical direction D1. The base end of the first nozzle arm 51a is connected to the first nozzle base 51b. The first nozzle arm 51a extends in the horizontal direction from the first nozzle base 51b.

[0060] The first nozzle arm 51a supports the first discharge nozzle 41a. The first discharge nozzle 41a protrudes downward from the first nozzle arm 51a. The first discharge nozzle 41a may be disposed at the tip of the first nozzle arm 51a.

[0061] The first nozzle movement mechanism 51c rotates the first nozzle base 51b in both forward and reverse directions about a second axis of rotation AX2 extending in the up-down direction D1, so that the first discharge nozzle 41a moves around the first nozzle base 51b in the circumferential direction about the second axis of rotation AX2.

[0062] The first nozzle moving mechanism 51c is controlled by the control device 10 (control unit 11). The actuator of the first nozzle moving mechanism 51c includes, for example, a ball screw mechanism and an electric motor capable of forward and reverse rotation. The electric motor provides a driving force to the ball screw mechanism. Alternatively, the actuator of the first nozzle moving mechanism 51c may include an electric motor capable of forward and reverse rotation and a reducer.

[0063] The second chemical liquid supply unit 42 supplies the second chemical liquid to the substrate W held by the substrate holding unit 2. In detail, the second chemical liquid supply unit 42 is controlled by the control device 10 (control unit 11) to supply the second chemical liquid to the rotating substrate W. In the present embodiment, the second chemical liquid supply unit 42 supplies TMAH to the substrate W.

[0064] Specifically, as shown in FIG. 2, the second chemical liquid supply unit 42 has a second discharge nozzle 42a, a second chemical liquid supply pipe 42b, a second chemical liquid on-off valve 42c, and a heater 42d. The processing chamber 201 accommodates the second discharge nozzle 42a and a part of the second chemical liquid supply pipe 42b. In this embodiment, the second chemical liquid on-off valve 42c and the heater 42d are disposed outside the processing chamber 201. Specifically, the second chemical liquid on-off valve 42c and the heater 42d are accommodated in the fluid box 102 described with reference to FIG. 1. In addition, the second chemical liquid supply pipe 42b is introduced from the outside of the processing chamber 201 to the inside. Specifically, the second chemical liquid supply pipe 42b is introduced from the fluid box 102 to the inside of the processing chamber 201.

[0065] The second discharge nozzle 42a discharges the second chemical liquid (TMAH) from above the rotating substrate W toward the upper surface of the substrate W. As a result, the second chemical liquid is supplied to the substrate W, and a liquid film LF3 of the second chemical liquid is formed on the upper surface of the substrate W. The second chemical liquid supply pipe 42b supplies the second chemical liquid to the second discharge nozzle 42a. The second chemical liquid on-off valve 42c controls the supply of the second chemical liquid to the second discharge nozzle 42a and the stop of the supply of the second chemical liquid to the second discharge nozzle 42a. The second discharge nozzle 42a, the second chemical liquid supply pipe 42b, and the second chemical liquid on-off valve 42c are configured substantially similarly to the first discharge nozzle 41a, the first chemical liquid supply pipe 41b, and the first chemical liquid on-off valve 41c, and therefore detailed description thereof will be omitted.

[0066] The heater 42d is disposed in the second chemical liquid supply pipe 42b. The heater 42d heats the second chemical liquid (TMAH) flowing through the second chemical liquid supply pipe 42b. The start and stop of driving of the heater 42d are controlled by the control device 10 (control unit 11). The control device 10 (control unit 11) may control the temperature or set temperature of the heater 42d. For example, the heater 42d heats the second chemical liquid flowing through the second chemical liquid supply pipe 42b so that the temperature of the second chemical liquid becomes 40°C.

[0067] The second nozzle moving section 52 moves the second discharge nozzle 42a along a horizontal plane. The operation of the second nozzle moving section 52 is controlled by the control device 10 (control section 11). More specifically, the second nozzle moving section 52 moves the second discharge nozzle 42a between a second retracted position EP2 (see FIG. 3) and a central position CP. Furthermore, the second nozzle moving section 52 moves the second discharge nozzle 42a between the central position CP and a first end facing position P1 (see FIG. 3). The first end facing position P1 indicates a position facing an end E of the substrate W (see FIG. 3).

[0068] In this embodiment, the second discharge nozzle 42a discharges the second chemical liquid (TMAH) from the central position CP toward the upper surface of the rotating substrate W. Furthermore, the second discharge nozzle 42a discharges the second chemical liquid toward the upper surface of the rotating substrate W while moving between the central position CP and the first end facing position P1. Note that the second retract position EP2 is a position outside the substrate holding part 2, similar to the first retract position EP1. For example, the second retract position EP2 may be a position outside the multiple guard parts 6.

[0069] As shown in FIG. 2, the second nozzle moving part 52 may have a second nozzle arm 52a, a second nozzle base 52b, and a second nozzle moving mechanism 52c. The second nozzle arm 52a supports the second discharge nozzle 42a. The base end of the second nozzle arm 52a is connected to the second nozzle base 52b. The second nozzle moving mechanism 52c rotates the second nozzle base 52b in both forward and reverse directions about a third rotation axis AX3 extending in the up-down direction D1. The configurations of the second nozzle arm 52a, the second nozzle base 52b, and the second nozzle moving mechanism 52c are substantially similar to those of the first nozzle arm 51a, the first nozzle base 51b, and the first nozzle moving mechanism 51c, and therefore detailed description thereof will be omitted.

[0070] The rinsing liquid supply unit 43 supplies a rinsing liquid to the substrate W held by the substrate holder 2. In detail, the rinsing liquid supply unit 43 is controlled by the control device 10 (control unit 11) to supply the rinsing liquid to the substrate W during rotation.

[0071] 2, the rinsing liquid supply unit 43 includes a third discharge nozzle 43a, a rinsing liquid supply pipe 43b, and a rinsing liquid on-off valve 43c. The processing chamber 201 accommodates the third discharge nozzle 43a and a part of the rinsing liquid supply pipe 43b. In this embodiment, the rinsing liquid on-off valve 43c is disposed outside the processing chamber 201. Specifically, the rinsing liquid on-off valve 43c is accommodated in the fluid box 102 described with reference to FIG. 1. The rinsing liquid supply pipe 43b is introduced from the outside of the processing chamber 201 to the inside. Specifically, the rinsing liquid supply pipe 43b is introduced from the fluid box 102 to the inside of the processing chamber 201.

[0072] The third discharge nozzle 43a is a fixed nozzle, and discharges the rinse liquid from a fixed position toward the upper surface of the rotating substrate W held by the substrate holder 2. As a result, the rinse liquid is supplied to the substrate W, and a liquid film LF2 of the rinse liquid is formed on the upper surface of the substrate W. The rinse liquid supply pipe 43b supplies the rinse liquid to the third discharge nozzle 43a. The rinse liquid on-off valve 43c controls the supply of the rinse liquid to the third discharge nozzle 43a and the stop of the supply of the rinse liquid to the third discharge nozzle 43a. The configurations of the third discharge nozzle 43a, the rinse liquid supply pipe 43b, and the rinse liquid on-off valve 43c are substantially similar to those of the first discharge nozzle 41a, the first chemical liquid supply pipe 41b, and the first chemical liquid on-off valve 41c, and therefore detailed description thereof will be omitted.

[0073] The multiple guard parts 6 surround the substrate W held by the substrate holding part 2 and receive the processing liquid discharged from the substrate W. As shown in Fig. 2, in this embodiment, the multiple guard parts 6 include a first guard part 6a, a second guard part 6b, and a third guard part 6c. The first guard part 6a, the second guard part 6b, and the third guard part 6c are disposed outside the substrate holding part 2 and the substrate rotating part 3.

[0074] More specifically, the first guard portion 6a is the guard portion 6 that is disposed innermost among the first guard portion 6a, the second guard portion 6b, and the third guard portion 6c. In other words, among the first guard portion 6a, the second guard portion 6b, and the third guard portion 6c, the guard portion 6 that is closest to the substrate holding portion 2 and the substrate rotating portion 3 is the first guard portion 6a.

[0075] The second guard portion 6b is disposed outside the first guard portion 6a. The third guard portion 6c is disposed outside the second guard portion 6b. In other words, the second guard portion 6b is disposed between the first guard portion 6a and the third guard portion 6c.

[0076] The third guard portion 6c is the guard portion 6 that is disposed outermost among the first guard portion 6a, the second guard portion 6b, and the third guard portion 6c. In other words, among the first guard portion 6a, the second guard portion 6b, and the third guard portion 6c, the guard portion 6 that is farthest from the substrate holding portion 2 and the substrate rotating portion 3 is the third guard portion 6c.

[0077] In detail, the first guard portion 6a has a first guard 61a, a first cup 62a, and a second cup 62b. The second guard portion 6b has a second guard 61b and a third cup 62c. The third guard portion 6c has a third guard 61c.

[0078] The first guard 61a is generally cylindrical and centered on the first rotation axis AX1, and surrounds the substrate holding unit 2 and the substrate rotating unit 3. Specifically, the first guard 61a has a generally cylindrical side wall and a generally cylindrical inclined wall. The side wall extends in the up-down direction D1. The inclined wall is connected to the upper end of the side wall and extends obliquely upward from the upper end of the side wall toward the first rotation axis AX1. The inclined wall forms the upper part of the first guard 61a.

[0079] The first guard 61a receives the processing liquid discharged from the substrate W. Specifically, the processing liquid discharged from the substrate W is received by the inner wall surface of the first guard 61a.

[0080] The first cup 62a is connected to the lower end of the first guard 61a (side wall portion). The first cup 62a is annular, and a circular liquid receiving groove with an open upper surface is formed inside the first guard 61a. That is, the first cup 62a is provided inside the first guard 61a. The processing liquid received by the first guard 61a (inner wall surface) flows down to the first cup 62a due to its own weight. In addition, the processing liquid that collides with the first guard 61a (inner wall surface) and bounces off falls into the first cup 62a due to its own weight. As a result, the processing liquid is collected in the first cup 62a (liquid receiving groove).

[0081] The second cup 62b is connected to the outer wall surface of the first guard 61a. In this embodiment, the second cup 62b is connected to the lower end of the first guard 61a (side wall portion). The second cup 62b is annular, and forms a circular liquid receiving groove with an open upper surface on the outside of the first guard 61a. In other words, the second cup 62b is provided on the outside of the first guard 61a.

[0082] The second guard 61b is disposed outside the first guard 61a. The second guard 61b is generally cylindrical and centered on the first axis of rotation AX1, similar to the first guard 61a. The configuration of the second guard 61b is generally similar to that of the first guard 61a, and therefore a detailed description thereof will be omitted.

[0083] The second guard 61b receives the processing liquid discharged from the substrate W. Specifically, the processing liquid discharged from the substrate W is received by the inner wall surface of the second guard 61b. The lower end of the second guard 61b (side wall portion) is located in the second cup 62b (liquid receiving groove). The processing liquid received by the second guard 61b (inner wall surface) flows down to the second cup 62b due to its own weight. In addition, the processing liquid that collides with the second guard 61b (inner wall surface) and bounces off falls into the second cup 62b due to its own weight. As a result, the processing liquid is collected in the second cup 62b (liquid receiving groove).

[0084] The third cup 62c is connected to the outer wall surface of the second guard 61b. The third cup 62c is annular, and forms a circular liquid receiving groove with an open upper surface on the outer side of the second guard 61b. In other words, the third cup 62c is provided on the outer side of the second guard 61b.

[0085] The third guard 61c is disposed on the outer side of the second guard 61b. The third guard 61c is generally cylindrical and centered on the first rotation axis AX1, similar to the first guard 61a and the second guard 61b. The configuration of the third guard 61c is generally similar to that of the first guard 61a and the second guard 61b, and therefore a detailed description thereof will be omitted.

[0086] The third guard 61c receives the processing liquid discharged from the substrate W. Specifically, the processing liquid discharged from the substrate W is received by the inner wall surface of the third guard 61c. The lower end of the third guard 61c (side wall portion) is located in the third cup 62c (liquid receiving groove). The processing liquid received by the third guard 61c (inner wall surface) flows down to the third cup 62c due to its own weight. In addition, the processing liquid that collides with the third guard 61c (inner wall surface) and bounces off falls into the third cup 62c due to its own weight. As a result, the processing liquid is collected in the third cup 62c (liquid receiving groove).

[0087] The lifting unit 7 lifts and lowers the multiple guard parts 6 individually, and switches the guard parts 6 surrounding the substrate W held by the substrate holding unit 2 between the multiple guard parts 6. In this embodiment, the lifting unit 7 lifts and lowers the first guard part 6a to the third guard part 6c individually in the vertical direction D1. The lifting unit 7 is controlled by the control device 10 (control unit 11). In detail, the lifting unit 7 lifts and lowers the first guard part 6a to the third guard part 6c in the vertical direction D1 between an upper position and a lower position. The upper position is a position higher than the lower position.

[0088] For example, when the substrate W is loaded into the processing chamber 201 by the center robot CR (FIG. 1) or when the substrate W is unloaded from the processing chamber 201 to the outside by the center robot CR (FIG. 1), the first guard part 6a to the third guard part 6c are located at the lower position. When the processing liquid discharged from the substrate W is received by the first guard part 6a (first guard 61a), the first guard part 6a to the third guard part 6c are located at the upper position. When the processing liquid discharged from the substrate W is received by the second guard part 6b (second guard 61b), the first guard part 6a is located at the lower position, and the second guard part 6b and the third guard part 6c are located at the upper position. When the processing liquid discharged from the substrate W is received by the third guard part 6c (third guard 61c), the first guard part 6a and the second guard part 6b are located at the lower position, and the third guard part 6c is located at the upper position.

[0089] As shown in Fig. 2, in this embodiment, the lifting section 7 includes a first lifting section 71, a second lifting section 72, and a third lifting section 73. The first lifting section 71 lifts and lowers the first guard section 6a in the vertical direction D1 between the upper position and the lower position. The second lifting section 72 lifts and lowers the second guard section 6b in the vertical direction D1 between the upper position and the lower position. The third lifting section 73 lifts and lowers the third guard section 6c in the vertical direction D1 between the upper position and the lower position.

[0090] The first lifting / lowering unit 71 to the third lifting / lowering unit 73 are controlled by the control device 10 (control unit 11). The actuators of the first lifting / lowering unit 71 to the third lifting / lowering unit 73 include, for example, a ball screw mechanism and an electric motor capable of forward and reverse rotation. The electric motor provides driving force to the ball screw mechanism. Alternatively, the actuators of the first lifting / lowering unit 71 to the third lifting / lowering unit 73 may include an electric motor capable of forward and reverse rotation and a reducer, or may include a cylinder such as an air cylinder.

[0091] The drainage unit 8 discharges a portion of the processing liquid received by the multiple guard units 6 to the outside of the processing chamber 201. That is, the drainage unit 8 discharges a portion of the processing liquid after being used for substrate processing to the outside of the processing chamber 201. In this embodiment, the first chemical liquid (DHF) and the rinse liquid are discharged.

[0092] Specifically, the drainage unit 8 discharges the processing liquid received by the first guard unit 6a (first guard 61a) to the outside of the processing chamber 201. More specifically, the drainage unit 8 discharges the processing liquid collected in the first cup 62a to the outside of the processing chamber 201. In addition, the drainage unit 8 discharges the processing liquid received by the third guard unit 6c (third guard 61c) to the outside of the processing chamber 201. More specifically, the drainage unit 8 discharges the processing liquid collected in the third cup 62c to the outside of the processing chamber 201.

[0093] 2, in this embodiment, the drainage unit 8 includes a first drainage unit 81 and a second drainage unit 82. The substrate processing apparatus 100 further includes a drain tank 84. The drain tank 84 is disposed outside the processing chamber 201.

[0094] The first drainage unit 81 discharges the processing liquid collected in the first cup 62a to the drain tank 84. Specifically, the first drainage unit 81 has a first drainage pipe 81a and a first drainage on-off valve 81b. The processing chamber 201 accommodates a portion of the first drainage pipe 81a. In this embodiment, the first drainage on-off valve 81b is disposed outside the processing chamber 201. The first drainage pipe 81a is led from the inside of the processing chamber 201 to the outside.

[0095] The first drainage pipe 81a is, for example, a tube. One end of the first drainage pipe 81a is connected to the bottom of the first cup 62a. Specifically, the first drainage pipe 81a communicates with the inner space of the first cup 62a (liquid receiving groove). The treatment liquid collected in the first cup 62a flows into the first drainage pipe 81a. The other end of the first drainage pipe 81a is connected to the drain tank 84.

[0096] The first drainage on-off valve 81b is provided in the first drainage pipe 81a. The first drainage on-off valve 81b controls the flow of the treatment liquid through the first drainage pipe 81a and the stop of the flow of the treatment liquid through the first drainage pipe 81a.

[0097] Specifically, the first drainage on-off valve 81b can be switched between an open state and a closed state. The control device 10 (control unit 11) controls the opening and closing operation of the first drainage on-off valve 81b. The actuator of the first drainage on-off valve 81b is, for example, a pneumatic actuator or an electric actuator. When the first drainage on-off valve 81b is in an open state, the treatment liquid flows through the first drainage pipe 81a to the drain tank 84. On the other hand, when the first drainage on-off valve 81b is in a closed state, the flow of the treatment liquid through the first drainage pipe 81a stops.

[0098] The second drainage section 82 discharges the processing liquid collected in the third cup 62c to the drain tank 84. Specifically, the second drainage section 82 has a second drainage pipe 82a and a second drainage on-off valve 82b. The processing chamber 201 accommodates a portion of the second drainage pipe 82a. In this embodiment, the second drainage on-off valve 82b is disposed outside the processing chamber 201. The second drainage pipe 82a is led out from the inside of the processing chamber 201 to the outside.

[0099] One end of the second drainage pipe 82a is connected to the bottom of the third cup 62c. The processing liquid collected in the third cup 62c flows into the second drainage pipe 82a. The other end of the second drainage pipe 82a is connected to a drain tank 84. The configuration of the second drainage pipe 82a is substantially the same as that of the first drainage pipe 81a, and therefore a detailed description thereof will be omitted.

[0100] The second drainage on-off valve 82b is disposed in the second drainage pipe 82a. When the second drainage on-off valve 82b is open, the treatment liquid flows through the second drainage pipe 82a to the drain tank 84. On the other hand, when the second drainage on-off valve 82b is closed, the treatment liquid stops flowing through the second drainage pipe 82a. The configuration of the second drainage on-off valve 82b is substantially the same as that of the first drainage on-off valve 81b, and therefore a detailed description thereof will be omitted.

[0101] The recovery unit 9 recovers another portion of the processing liquid received by the multiple guard units 6. The recovery unit 9 also distributes the recovered processing liquid to the fluid cabinet 101 described with reference to FIG. 1. As a result, another portion of the processing liquid after being used for substrate processing is stored again in the fluid cabinet 101 and is used again for the next or subsequent substrate processing. In this embodiment, the second chemical liquid (TMAH) is recovered and reused for substrate processing.

[0102] Specifically, the recovery unit 9 recovers the treatment liquid received by the second guard unit 6b (second guard 61b). More specifically, the recovery unit 9 recovers the treatment liquid collected in the second cup 62b.

[0103] 2, in this embodiment, the recovery unit 9 has a recovery pipe 91 and a recovery on-off valve 92. The processing chamber 201 accommodates a part of the recovery pipe 91. In this embodiment, the recovery on-off valve 92 is disposed outside the processing chamber 201. The recovery pipe 91 is led out from the inside of the processing chamber 201 to the outside.

[0104] One end of the recovery pipe 91 is connected to the bottom of the second cup 62b. The processing liquid collected in the second cup 62b flows into the recovery pipe 91. The other end of the recovery pipe 91 is connected to the fluid cabinet 101. The configuration of the recovery pipe 91 is substantially similar to the first drainage pipe 81a and the second drainage pipe 82a, and therefore a detailed description thereof will be omitted.

[0105] The recovery on-off valve 92 is disposed in the recovery pipe 91. When the recovery on-off valve 92 is open, the treatment liquid flows through the recovery pipe 91 to the fluid cabinet 101. On the other hand, when the recovery on-off valve 92 is closed, the treatment liquid stops flowing through the recovery pipe 91. The configuration of the recovery on-off valve 92 is substantially similar to that of the first drainage on-off valve 81b and the second drainage on-off valve 82b, and therefore a detailed description thereof will be omitted.

[0106] Fig. 3 is a diagram showing a movement locus J of the second discharge nozzle 42a included in the substrate processing apparatus 100 of this embodiment. As shown in Fig. 3, the second nozzle moving part 52 horizontally moves the second discharge nozzle 42a along an arc-shaped movement locus J that passes through a central position CP (a position facing the center of the substrate W).

[0107] When starting to discharge the second chemical liquid (TMAH) from the second discharge nozzle 42a, the control device 10 (controller 11) controls the second nozzle movement unit 52 to move the second discharge nozzle 42a from the second retracted position EP2 to the central position CP. Then, the control device 10 (controller 11) controls the second chemical liquid supply unit 42 to discharge the second chemical liquid from the second discharge nozzle 42a. As a result, the second discharge nozzle 42a discharges the second chemical liquid from the central position CP toward the center of the rotating substrate W.

[0108] When a predetermined time has elapsed since the start of the discharge of the second chemical liquid, the control device 10 (control unit 11) controls the second nozzle movement unit 52 to move the second discharge nozzle 42a above the substrate W held by the substrate holding unit 2, while controlling the second chemical liquid supply unit 42 to discharge the second chemical liquid from the second discharge nozzle 42a. As a result, the second discharge nozzle 42a discharges the second chemical liquid while moving in the horizontal direction above the rotating substrate W. Note that the control device 10 (control unit 11) starts the movement of the second discharge nozzle 42a after the entire upper surface of the substrate W is covered with the second chemical liquid.

[0109] Specifically, the movement trajectory J passes through two positions (a first end facing position P1 and a second end facing position P2) facing the end E of the substrate W. The first end facing position P1 indicates the position farther from the second retreat position EP2 among the first end facing position P1 and the second end facing position P2. The second end facing position P2 indicates the position closer to the second retreat position EP2 among the first end facing position P1 and the second end facing position P2. In this embodiment, the control device 10 (controller 11) discharges the second chemical liquid from the second discharge nozzle 42a while repeatedly moving the second discharge nozzle 42a between the center position CP and the first end facing position P1. That is, the control device 10 (controller 11) half-scans the second discharge nozzle 42a.

[0110] The control device 10 (control unit 11) ends the half scan when a predetermined scan processing time has elapsed since the start of the half scan. The scan processing time is, for example, 40 seconds. During this time, the second discharge nozzle 42a repeatedly moves (reciprocates) between the center position CP and the first end facing position P1.

[0111] More specifically, the control device 10 (control unit 11) stops the second discharge nozzle 42a at the center position CP for a first stop time, and then moves the second discharge nozzle 42a to the first end facing position P1. Then, the control device 10 (control unit 11) stops the second discharge nozzle 42a at the first end facing position P1 for a second stop time, and then moves the second discharge nozzle 42a to the center position CP. The control device 10 (control unit 11) discharges the second chemical liquid from the second discharge nozzle 42a while the second discharge nozzle 42a is stopped at the center position CP. The control device 10 (control unit 11) discharges the second chemical liquid from the second discharge nozzle 42a while the second discharge nozzle 42a is moving between the center position CP and the first end facing position P1. The control device 10 (control unit 11) discharges the second chemical liquid from the second discharge nozzle 42a while the second discharge nozzle 42a is stopped at the first end facing position P1.

[0112] The first stop time is longer than the second stop time. For example, the first stop time is 2 seconds. The second stop time is 1 second. According to this embodiment, since the first stop time is longer than the second stop time, the liquid film is less likely to become thin at the center of the substrate W during half scanning. In other words, so-called "liquid shortage" is less likely to occur at the center of the substrate W. Therefore, coverage can be maintained during half scanning.

[0113] As already described, in this embodiment, TMAH at a temperature equal to or higher than room temperature (40° C.) is used as the second chemical liquid. Therefore, if the second chemical liquid is discharged only from the center position CP without scanning the second discharge nozzle 42a, the temperature of the second chemical liquid covering the edge E of the substrate W may be lower than the temperature of the second chemical liquid covering the center of the substrate W. In contrast, according to this embodiment, the second discharge nozzle 42a is scanned when discharging the second chemical liquid from the second discharge nozzle 42a. As a result, the temperature of the second chemical liquid (TMAH) in contact with the substrate W can be made approximately uniform between the center and the edge E of the substrate W.

[0114] In this embodiment, the control device 10 (control unit 11) moves the second discharge nozzle 42a between the center position CP and the first end facing position P1, but the control device 10 (control unit 11) may move the second discharge nozzle 42a between the center position CP and the second end facing position P2. Alternatively, the control device 10 (control unit 11) may move the second discharge nozzle 42a between the first end facing position P1 and the second end facing position P2. In other words, the control device 10 (control unit 11) may perform a full scan of the second discharge nozzle 42a. In this case, the second discharge nozzle 42a may be temporarily stopped at the center position CP during the full scan.

[0115] Next, the movement of the first discharge nozzle 41a will be described with reference to Fig. 3. Similar to the second nozzle movement section 52, the first nozzle movement section 51 moves the first discharge nozzle 41a horizontally along an arc-shaped movement trajectory that passes through the center position CP.

[0116] When starting to discharge the first chemical liquid (DHF) from the first discharge nozzle 41a, the control device 10 (controller 11) controls the first nozzle moving unit 51 to move the first discharge nozzle 41a from the first retracted position EP1 to the central position CP. Then, the control device 10 (controller 11) controls the first chemical liquid supply unit 41 to discharge the first chemical liquid from the first discharge nozzle 41a. As a result, the first discharge nozzle 41a discharges the first chemical liquid from the central position CP toward the center of the rotating substrate W.

[0117] Next, an example of a substrate W processed by the substrate processing apparatus 100 will be described with reference to Fig. 4(a) and Fig. 4(b). Fig. 4(a) is an enlarged plan view showing an example of a substrate W processed by the substrate processing apparatus 100 of the present embodiment. Specifically, Fig. 4(a) shows an enlarged view of a portion of the upper surface of the substrate W. Fig. 4(b) is an enlarged cross-sectional view showing an example of a substrate W processed by the substrate processing apparatus 100 of the present embodiment. Specifically, Fig. 4(b) shows a cross section of the substrate W cut along the cutting line IVB-IVB in Fig. 4(a).

[0118] As shown in Fig. 4(a), the substrate W has a pattern PT. The pattern PT includes a plurality of recesses 320. Each recess 320 has an opening in the uppermost surface Ws of the substrate W. More specifically, as shown in Fig. 4(b), the substrate W has a silicon substrate 310 and a pattern PT. The pattern PT is formed on the silicon substrate 310.

[0119] In detail, the pattern PT includes a multi-layered laminated structure 330 and a plurality of recesses 320. The laminated structure 330 includes a plurality of silicon oxide layers 331 and a plurality of polysilicon layers 332. The plurality of silicon oxide layers 331 and the plurality of polysilicon layers 332 are laminated in a thickness direction D2 of the substrate W such that the silicon oxide layers 331 and the polysilicon layers 332 are alternately replaced with each other. The thickness direction D2 indicates a direction approximately perpendicular to the surface of the silicon substrate 310. The thickness direction D2 is approximately parallel to the up-down direction D1 when the substrate W is held by the substrate holding part 2.

[0120] Each of the recesses 320 is recessed from the outermost surface Ws of the substrate W toward the silicon substrate 310 in the thickness direction D2 of the substrate W. In other words, each of the recesses 320 is recessed in the stacking direction in which the silicon oxide layers 331 and the polysilicon layers 332 are alternately stacked. Each of the recesses 320 penetrates the stacked structure 330 in the thickness direction D2 (stacking direction). In other words, each of the recesses 320 extends from the outermost surface Ws of the substrate W to the silicon substrate 310. Therefore, the deepest portion of each of the recesses 320 is adjacent to the upper surface of the silicon substrate 310. As long as the recesses 320 are recessed from the outermost surface Ws of the substrate W, they may be trenches or holes, and are not particularly limited.

[0121] Next, the substrate processing performed by the substrate processing apparatus 100 will be described with reference to Fig. 5(a) to Fig. 5(c). Fig. 5(a) is an enlarged cross-sectional view that shows a schematic view of a portion of the substrate W to which a first chemical liquid (DHF) has been supplied. Fig. 5(b) is an enlarged cross-sectional view that shows a schematic view of a portion of the substrate W to which a second chemical liquid (TMAH) has been supplied. Fig. 5(c) is an enlarged cross-sectional view that shows a schematic view of a portion of the substrate W after the substrate processing.

[0122] 5(a), before the substrate processing is performed, a native oxide film 340 is formed on the surfaces of the plurality of silicon oxide layers 331, the plurality of polysilicon layers 332, and the surface of the silicon substrate 310. The substrate processing apparatus 100 first supplies a first chemical liquid (DHF) to the upper surface of the substrate W. As a result, as shown in FIG. 5(b), the native oxide film 340 is removed from the substrate W, and the side surfaces of the plurality of silicon oxide layers 331 and the side surfaces of the plurality of polysilicon layers 332 are exposed from the inner surfaces of the recesses 320.

[0123] The substrate processing apparatus 100 supplies a second chemical liquid (TMAH) to the upper surface of the substrate W from which the native oxide film 340 has been removed. As a result, as shown in Fig. 5(c), of the multiple silicon oxide layers 331 and the multiple polysilicon layers 332, the multiple polysilicon layers 332 are selectively etched to form multiple recesses 333 on the inner side surface of each recess 320. Each of the recesses 333 is recessed in a surface direction D3 of the substrate W. The surface direction D3 indicates a horizontal direction substantially perpendicular to a thickness direction D2 (stacking direction) of the substrate W.

[0124] The substrate W may have, for example, a pattern PT with a high aspect ratio. The aspect ratio of the pattern PT indicates the ratio of the depth in the thickness direction D2 to the width in the surface direction D3 of the recess 320. The high aspect ratio pattern PT includes, for example, a laminated structure 330 having 80 or more layers.

[0125] Next, the substrate processing apparatus 100 and the substrate processing method of the present embodiment will be described with reference to Figs. 1 to 15. The substrate processing method of the present embodiment is performed by the substrate processing apparatus 100 described with reference to Figs. 1 to 5. Fig. 6 is a flowchart showing the flow of the substrate processing method of the present embodiment. In detail, Fig. 6 shows the flow of the process performed by the control unit 11 (control device 10) included in the substrate processing apparatus 100 of the present embodiment.

[0126] As shown in FIG. 6, the substrate processing method of this embodiment includes step S1 (substrate loading step), step S2 (first chemical liquid step), step S3 (first rinsing step), step S4 (removal step), step S5 (second chemical liquid step), step S6 (second rinsing step), step S7 (drying step), and step S8 (substrate unloading step).

[0127] In step S1, a substrate loading process is performed by the control device 10 (controller 11). In step S2, a first chemical liquid process is performed by the control device 10 (controller 11). In step S3, a first rinsing process is performed by the control device 10 (controller 11). In step S4, a removal process is performed by the control device 10 (controller 11). In step S5, a second chemical liquid process is performed by the control device 10 (controller 11). In step S6, a second rinsing process is performed by the control device 10 (controller 11). In step S7, a drying process is performed by the control device 10 (controller 11). In step S8, a substrate unloading process is performed by the control device 10 (controller 11).

[0128] FIG. 7(a) is a diagram showing the substrate processing unit 200 during the first chemical liquid processing. FIG. 7(b) is an enlarged cross-sectional view showing a part of the substrate W during the first chemical liquid processing. FIG. 8(a) is a diagram showing a first state of the substrate processing unit 200 during the first rinse processing. FIG. 8(b) is an enlarged cross-sectional view showing a part of the substrate W during the first rinse processing. FIG. 9(a) is a diagram showing a second state of the substrate processing unit 200 during the first rinse processing. FIG. 9(b) is a diagram showing a third state of the substrate processing unit 200 during the first rinse processing. FIG. 10 is a diagram showing the substrate processing unit 200 during the removal processing. FIG. 11(a) is a diagram showing the substrate processing unit 200 at the end of the removal processing. FIG. 11(b) is an enlarged cross-sectional view showing a part of the substrate W at the end of the removal processing. Fig. 12(a) is a diagram showing the substrate processing unit 200 at the start of the second chemical liquid processing. Fig. 12(b) is an enlarged cross-sectional view showing a part of the substrate W during the second chemical liquid processing. Fig. 13 is a diagram showing the substrate processing unit 200 during the scan processing. Fig. 14 is a diagram showing the substrate processing unit 200 during the second rinse processing. Fig. 15 is a diagram showing the substrate processing unit 200 during the drying processing.

[0129] The process shown in Fig. 6 starts after the center robot CR receives the substrate W from the indexer robot IR. As shown in Fig. 6, when the center robot CR receives the substrate W from the indexer robot IR, the control device 10 (control unit 11) executes a substrate carry-in process (step S1).

[0130] Specifically, the controller 10 (controller 11) controls the center robot CR to load the substrate W into the processing chamber 201. Then, the controller 10 (controller 11) controls the substrate holding part 2 to hold the substrate W loaded by the center robot CR. As a result, the substrate W is held horizontally in the processing chamber 201 by the substrate holding part 2. As described with reference to FIGS. 1 to 5, the substrate W has a pattern PT including a plurality of recesses 320.

[0131] When the substrate W is held, the control device 10 (control unit 11) executes a first chemical liquid treatment (step S2). The first chemical liquid treatment refers to a process of controlling the treatment liquid supply unit 4 (first chemical liquid supply unit 41) to supply a first chemical liquid (DHF) to the substrate W. As described with reference to Figures 5(a) and 5(b), by supplying the first chemical liquid (DHF) to the substrate W, the native oxide film 340 is removed from the substrate W.

[0132] 7(a), when the substrate W is held by the substrate holding part 2, the control device 10 (control part 11) controls the substrate rotating part 3 to rotate the substrate W at a first rotation speed. The rotation speed indicates the number of rotations per unit time. The first rotation speed is, for example, 800 rpm.

[0133] When the substrate W is held by the substrate holding part 2, the control device 10 (control part 11) controls the lifting part 7 to move the first guard part 6a to the third guard part 6c from the lower position to the upper position. The control device 10 (control part 11) also controls the first nozzle moving part 51 to move the first discharge nozzle 41a from the first retracted position EP1 to the central position CP. Then, the control device 10 (control part 11) controls the first chemical liquid supply part 41 to discharge the first chemical liquid from the first discharge nozzle 41a. As a result, the first chemical liquid is supplied to the upper surface of the rotating substrate W, and a liquid film LF1 of the first chemical liquid is formed on the upper surface of the substrate W.

[0134] The first chemical liquid discharged from the rotating substrate W during the first chemical liquid processing is received by the first guard part 6a (first guard 61a). The first chemical liquid received by the first guard part 6a is discharged to the drain tank 84 by the first drainage part 81.

[0135] 7(b), the first chemical liquid process is performed and the first chemical liquid is supplied to the substrate W, whereby a liquid film LF1 of the first chemical liquid is formed and the first chemical liquid permeates into each of the recesses 320. As a result, the native oxide film 340 formed on the surface layers of the plurality of silicon oxide layers 331, the surface layers of the plurality of polysilicon layers 332, and the surface layer of the silicon substrate 310 is removed by the first chemical liquid (DHF).

[0136] The control device 10 (control unit 11) executes a first rinse process in response to the lapse of a predetermined first set time from the start of the first chemical liquid process (step S3 in FIG. 6). The first rinse process refers to a process of controlling the processing liquid supply unit 4 (rinsing liquid supply unit 43) to supply a rinsing liquid (first rinsing liquid) to the substrate W. The first rinse process rinses the first chemical liquid from the substrate W.

[0137] Specifically, as shown in FIG. 8(a), the control device 10 (controller 11) controls the first chemical liquid supply unit 41 to stop the supply of the first chemical liquid, and then controls the first nozzle moving unit 51 to move the first discharge nozzle 41a from the center position CP to the first retract position EP1. The control device 10 (controller 11) also controls the substrate rotating unit 3 to rotate the substrate W at the second rotation speed. Then, the control device 10 (controller 11) controls the rinsing liquid supply unit 43 to discharge the rinsing liquid from the third discharge nozzle 43a. In this embodiment, the second rotation speed is the same as the first rotation speed. That is, the control device 10 (controller 11) maintains the rotation speed of the substrate W.

[0138] When the rinsing liquid is supplied to the upper surface of the rotating substrate W in the first rinsing process, the first chemical liquid is washed away from the substrate W, and a liquid film LF2 of the rinsing liquid is formed on the upper surface of the substrate W. In detail, as shown in FIG. 8(b), the rinsing liquid enters each of the recesses 320, and the first chemical liquid is discharged from each of the recesses 320, and the first chemical liquid is washed away from the substrate W.

[0139] The first chemical liquid and the rinsing liquid discharged from the rotating substrate W during the first rinsing process are received by the first guard part 6a (first guard 61a). The first chemical liquid and the rinsing liquid received by the first guard part 6a are discharged to the drain tank 84 by the first drainage part 81.

[0140] The control device 10 (control unit 11) controls the lifting unit 7 in response to the lapse of a predetermined time from the start of the first rinsing process to switch the guard unit 6 surrounding the substrate W from the first guard unit 6a (first guard 61a) to the second guard unit 6b (second guard 61b). Hereinafter, the process of switching the guard unit 6 surrounding the substrate W from the first guard unit 6a (first guard 61a) to the second guard unit 6b (second guard 61b) may be referred to as a "first guard switching process."

[0141] 6, in this embodiment, step S3 (first rinsing step) includes steps S31 and S32. Specifically, the control device 10 (controller 11) first controls the substrate rotator 3 to rotate the substrate W at a second rotation speed, while controlling the processing liquid supply unit 4 (rinsing liquid supply unit 43) to supply the rinsing liquid to the rotating substrate W (step S31). As a result, the first chemical liquid is washed away from the substrate W, and a liquid film LF2 of the rinsing liquid is formed on the upper surface of the substrate W.

[0142] The control device 10 (control unit 11) executes the puddle process in response to the lapse of a second set time period after the start of the supply of the rinsing liquid (step S32). The puddle process refers to a process of holding a liquid film LF2 of the rinsing liquid on the substrate W.

[0143] 9(a), in this embodiment, the control device 10 (controller 11) controls the rinsing liquid supply unit 43 to stop the supply of the rinsing liquid. In addition, the control device 10 (controller 11) controls the substrate rotation unit 3 to stop the rotation of the substrate W. As a result, a liquid film LF2 of the rinsing liquid is held on the substrate W.

[0144] 9(b), the control device 10 (controller 11) executes a first guard replacement process during puddle processing. That is, the control device 10 (controller 11) controls the lifting / lowering unit 7 to replace the guard unit 6 surrounding the substrate W from the first guard unit 6a (first guard 61a) to the second guard unit 6b (second guard 61b). Specifically, the control device 10 (controller 11) controls the first lifting / lowering unit 71 to move the first guard unit 6a (first guard 61a) from the upper position to the lower position.

[0145] The control device 10 (controller 11) executes a removal process for removing the rinsing liquid from the substrate W when a predetermined third set time has elapsed since the start of the puddle process (step S4 in FIG. 6).

[0146] Specifically, as shown in FIG. 10, the control device 10 (control unit 11) controls the processing liquid supply unit 4 (rinsing liquid supply unit 43) to maintain a state in which the supply of the rinsing liquid is stopped, while controlling the substrate rotation unit 3 to rotate the substrate W at a third rotation speed. The third rotation speed is, for example, 800 rpm. As a result, as shown in FIG. 11(a), the rinsing liquid is removed from the substrate W. More specifically, as shown in FIG. 11(b), the rinsing liquid is discharged from each recess 320, and no rinsing liquid remains in each recess 320. Unlike the drying process, the removal process does not dry the substrate W.

[0147] The rinsing liquid discharged from the rotating substrate W during the removal process is received by the second guard part 6b (second guard 61b). The rinsing liquid received by the second guard part 6b is collected into the fluid cabinet 101 by the collection part 9.

[0148] In this embodiment, the removal process is performed after the puddle process, and therefore the control device 10 (control unit 11) stops the supply of the rinsing liquid from the puddle process to the removal process.

[0149] The control device 10 (controller 11) executes the second chemical liquid process in response to the lapse of a predetermined fourth set time from the start of the removal process (step S5 in FIG. 6). The fourth set time is set to be equal to or longer than the time required to remove the rinsing liquid from each recess 320 included in the high aspect ratio pattern PT. For example, the fourth set time may be selected from a range of 3 seconds or more and 5 seconds or less. According to this embodiment, the removal process can remove the rinsing liquid from each recess 320 included in the high aspect ratio pattern PT.

[0150] The second chemical liquid processing refers to processing of controlling the processing liquid supply unit 4 (second chemical liquid supply unit 42) to supply a second chemical liquid (TMAH) to the substrate W. As a result, the multiple polysilicon layers 332 included in the stacked structure 330 are etched.

[0151] Specifically, the control device 10 (controller 11) controls the second nozzle moving unit 52 to move the second discharge nozzle 42a from the second retracted position EP2 to the central position CP. More specifically, as shown in Fig. 11(a), the control device 10 (controller 11) moves the second discharge nozzle 42a from the second retracted position EP2 to the central position CP during the removal process.

[0152] As shown in FIG. 12(a), the control device 10 (controller 11) controls the second chemical liquid supply unit 42 to discharge the second chemical liquid from the second discharge nozzle 42a in response to the lapse of a fourth set time from the start of the removal process. As a result, a liquid film LF3 of the second chemical liquid is formed on the upper surface of the substrate W from which the rinsing liquid has been removed. More specifically, as shown in FIG. 12(b), the second chemical liquid enters each recess 320. At the start of the second chemical liquid process, the control device 10 (controller 11) controls the substrate rotation unit 3 to rotate the substrate W at a fourth rotation speed. The fourth rotation speed is, for example, 800 rpm.

[0153] The second chemical liquid discharged from the rotating substrate W during the second chemical liquid processing is received by the second guard portion 6b (second guard 61b). The second chemical liquid received by the second guard portion 6b is collected by the collection portion 9 into the fluid cabinet 101.

[0154] According to this embodiment, as described with reference to FIG. 11(b), before the start of the second chemical liquid treatment, no rinsing liquid remains in the recess 320, so that the amount of depression of the recess 333 can be made uniform from the opening to the deepest part of the recess 320.

[0155] Specifically, when the second chemical liquid is supplied to the substrate W while the rinsing liquid remains in the recess 320, the concentration of the second chemical liquid may be diluted by the rinsing liquid at a deep position in the recess 320. That is, the concentration of the second chemical liquid may become non-uniform in the recess 320. When the concentration of the second chemical liquid in the recess 320 becomes non-uniform, the etching amount of the polysilicon layer 332 becomes non-uniform, and the recess amount of the recessed portion 333 becomes non-uniform.

[0156] In contrast, according to the present embodiment, since no rinse liquid remains in recess 320 before the start of the second chemical liquid process, the concentration of the second chemical liquid can be made substantially uniform from the opening to the deepest part of recess 320. As a result, the amount of etching of polysilicon layer 332 can be made uniform from the opening to the deepest part of recess 320. Therefore, the amount of depression of recess 333 can be made uniform from the opening to the deepest part of recess 320.

[0157] Furthermore, when the first guard replacement process is performed after the removal process, the time during which the surface of the substrate W is exposed to the atmosphere becomes long. In contrast, according to this embodiment, the first guard replacement process is performed before the removal process, so that the time during which the surface of the substrate W is exposed to the atmosphere after the removal process can be shortened. Specifically, compared to the case of performing the first guard replacement process after the removal process, the upper surface of the substrate W can be transitioned from a state in which it is not covered with a liquid film (liquid film LF2 of the rinsing liquid) to a state in which it is covered with a liquid film (liquid film LF3 of the second chemical liquid) in a short time. Therefore, it is possible to suppress the formation of a natural oxide film on the surface of the substrate W.

[0158] Moreover, according to this embodiment, the removal process is performed after the puddle process. The liquid film LF2 of the rinsing liquid during the puddle process is thinner than the liquid film LF2 of the rinsing liquid formed when a continuous flow of the rinsing liquid is discharged from the third discharge nozzle 43a. Therefore, by performing the removal process after the puddle process, the amount of the rinsing liquid collected in the fluid cabinet 101 during the removal process can be reduced. Therefore, it is possible to suppress a decrease in the concentration of the second chemical liquid (TMAH).

[0159] Moreover, according to this embodiment, the supply of the rinsing liquid is stopped during the removal process. Therefore, as shown in FIG. 11(a), the second discharge nozzle 42a can be moved from the second retreat position EP2 to the center position CP during the removal process. Therefore, the upper surface of the substrate W can be transitioned in a short time from a state in which the upper surface of the substrate W is not covered with a liquid film (liquid film LF2 of the rinsing liquid) to a state in which the upper surface of the substrate W is covered with a liquid film (liquid film LF3 of the second chemical liquid). That is, the time during which the surface of the substrate W is exposed to the atmosphere can be shortened. Therefore, the formation of a natural oxide film on the surface of the substrate W can be suppressed.

[0160] Furthermore, according to this embodiment, since the first guard replacement process is performed during the puddle process, the amount of rinsing liquid collected in the fluid cabinet 101 can be reduced compared to the case where the first guard replacement process is performed while the rinsing liquid is being supplied to the substrate W. As a result, it is possible to suppress a decrease in the concentration of the second chemical liquid (TMAH).

[0161] In the present embodiment, the fourth rotation speed is the same as the third rotation speed. That is, the control device 10 (controller 11) maintains the same rotation speed of the substrate W from the removal process to the start of the second chemical liquid process.

[0162] In detail, the control device 10 (control unit 11) controls the substrate rotation unit 3 during the removal process to rotate the substrate W at a rotation speed equal to the rotation speed of the substrate W at the start of the second chemical liquid process. Therefore, when transitioning from the removal process to the second chemical liquid process, it is not necessary to control the substrate rotation unit 3 to change the rotation speed. Therefore, compared to the case where the rotation speed is changed when transitioning from the removal process to the second chemical liquid process, the upper surface of the substrate W can be transitioned from a state where it is not covered with a liquid film (liquid film LF2 of the rinsing liquid) to a state where it is covered with a liquid film (liquid film LF3 of the second chemical liquid) in a short time. Therefore, it is possible to suppress the formation of a natural oxide film on the surface of the substrate W.

[0163] The control device 10 (control unit 11) executes a scan process in response to the lapse of a predetermined fifth set time from the start of the second chemical liquid process. The fifth set time is set to be equal to or longer than the time required from the start of the discharge of the second chemical liquid until the second chemical liquid covers the entire upper surface of the substrate W. In other words, the fifth set time is set to be equal to or longer than the time required from the start of the discharge of the second chemical liquid until each recess 320 is filled with the second chemical liquid. The fifth set time is selected, for example, from a range of 3 seconds or more and 5 seconds or less.

[0164] 13, the control device 10 (controller 11) controls the second nozzle moving unit 52 to move the second discharge nozzle 42a between the center position CP and the first end facing position P1, while controlling the second chemical liquid supply unit 42 to discharge the second chemical liquid (TMAH) from the second discharge nozzle 42a. That is, the control device 10 (controller 11) executes a half scan process.

[0165] During the scanning process, the control device 10 (control section 11) controls the substrate rotation section 3 to reduce the rotation speed of the substrate W when the second discharge nozzle 42a is located at the first end facing position P1.

[0166] Specifically, the control device 10 (controller 11) rotates the substrate W at a fifth rotation speed when the second discharge nozzle 42a is located at the center position CP. The control device 10 (controller 11) also rotates the substrate W at the fifth rotation speed while the second discharge nozzle 42a is moving. When the second discharge nozzle 42a reaches the first end facing position P1, the control device 10 (controller 11) rotates the substrate W at a sixth rotation speed.

[0167] Here, the fifth rotation speed indicates a rotation speed lower than the fourth rotation speed (the rotation speed of the substrate W at the start of the second chemical liquid treatment). The fifth rotation speed is, for example, 250 rpm. Moreover, the sixth rotation speed indicates a rotation speed lower than the fifth rotation speed. The sixth rotation speed is, for example, 150 rpm.

[0168] According to this embodiment, during the scan process, the substrate W is rotated at a rotation speed lower than the rotation speed at the start of the supply of the second chemical liquid. By slowing down the rotation speed of the substrate W in this manner, the temperature of the second chemical liquid (TMAH) is less likely to decrease.

[0169] Furthermore, according to the present embodiment, the rotation speed of the substrate W is reduced when the second discharge nozzle 42a is located at the first end facing position P1. Therefore, the amount of the second chemical liquid discharged onto the end E of the substrate W that scatters outside the substrate W can be reduced.

[0170] Furthermore, according to this embodiment, the fourth rotation speed (the rotation speed of the substrate W at the start of the second chemical liquid processing) is higher than the rotation speed during the scan processing. Therefore, the upper surface of the substrate W can be quickly covered with the second chemical liquid at the start of the second chemical liquid processing. As a result, after the removal processing is completed, the upper surface of the substrate W can be transitioned in a short time from a state in which it is not covered with a liquid film (liquid film LF2 of the rinsing liquid) to a state in which it is covered with a liquid film (liquid film LF3 of the second chemical liquid). Therefore, the formation of a natural oxide film on the surface of the substrate W can be suppressed.

[0171] Furthermore, according to this embodiment, when the second chemical liquid treatment begins, the upper surface of the substrate W is quickly covered with the second chemical liquid, making it less likely that the amount of etching of the polysilicon layer 332 will become uneven between the center and end E of the substrate W.

[0172] The control device 10 (control unit 11) executes a second rinse process in response to the lapse of a sixth preset time from the start of the scan process (step S6 in FIG. 6). The second rinse process refers to a process of controlling the substrate rotation unit 3 to rotate the substrate W, while controlling the processing liquid supply unit 4 (rinsing liquid supply unit 43) to supply a rinsing liquid (second rinsing liquid) to the substrate W. The second rinse process rinses the second chemical liquid from the substrate W.

[0173] 14, the control device 10 (controller 11) controls the second chemical liquid supply unit 42 to stop the supply of the second chemical liquid, and then controls the second nozzle moving unit 52 to move the second discharge nozzle 42a from the center position CP or the first end facing position P1 to the second retract position EP2. The control device 10 (controller 11) also controls the substrate rotating unit 3 to rotate the substrate W at a seventh rotation speed. Then, the control device 10 (controller 11) controls the rinsing liquid supply unit 43 to discharge the rinsing liquid from the third discharge nozzle 43a.

[0174] In this embodiment, the seventh rotation speed is a rotation speed higher than the fifth rotation speed and the sixth rotation speed. That is, after the second chemical liquid treatment (scanning process) is completed, the control device 10 (control unit 11) controls the substrate rotation unit 3 to increase the rotation speed of the substrate W. The seventh rotation speed is, for example, 800 rpm.

[0175] When the rinsing liquid is supplied to the upper surface of the rotating substrate W in the second rinsing process, the second chemical liquid is washed away from the substrate W, and a liquid film LF2 of the rinsing liquid is formed on the upper surface of the substrate W. In detail, as in the first rinsing process described with reference to FIG. 8(b), the rinsing liquid enters each of the recesses 320, and the second chemical liquid is discharged from each of the recesses 320, and the second chemical liquid is washed away from the substrate W.

[0176] The first chemical liquid and the rinsing liquid discharged from the rotating substrate W during the second rinsing process are received by the second guard part 6b (second guard 61b). The second chemical liquid and the rinsing liquid received by the second guard part 6b are collected by the collection part 9 into the fluid cabinet 101.

[0177] The control device 10 (controller 11) executes the second guard replacement process in response to the lapse of a predetermined time from the start of the second rinsing process. As shown in Fig. 14, in this embodiment, the control device 10 (controller 11) starts the second rinsing process, and after the second chemical liquid is washed away from the substrate W and a liquid film LF2 of the rinsing liquid is formed on the upper surface of the substrate W, the control device 10 (controller 11) replaces the guard part 6 surrounding the substrate W from the second guard part 6b to the third guard part 6c. Specifically, the control device 10 (controller 11) controls the second lifting part 72 to move the second guard part 6b to the lower position.

[0178] After the second guard replacement process is performed, the rinsing liquid discharged from the rotating substrate W is received by the third guard part 6c (third guard 61c). The rinsing liquid received by the third guard part 6c is discharged to the drain tank 84 by the second drain part 82.

[0179] According to the present embodiment, it is possible to reduce the amount of rinse liquid collected in the fluid cabinet 101, compared to a case where the second guard replacement process is not performed. As a result, it is possible to suppress a decrease in the concentration of the second chemical liquid (TMAH).

[0180] After performing the second guard replacement process, the control device 10 (controller 11) controls the substrate rotator 3 to increase the rotation speed of the substrate W from the seventh rotation speed to the eighth rotation speed. For example, the control device 10 (controller 11) gradually increases the rotation speed of the substrate W from 800 rpm to 1200 rpm.

[0181] In this embodiment, the rinse liquid (second rinse liquid) used in the second rinse step (second rinse process) is the same as the rinse liquid (first rinse liquid) used in the first rinse step (first rinse process). However, the rinse liquid (second rinse liquid) used in the second rinse step (second rinse process) may be different from the rinse liquid (first rinse liquid) used in the first rinse step (first rinse process).

[0182] The control device 10 (control unit 11) executes a drying process in response to the elapse of a seventh set time period determined in advance after the start of the second rinsing process (step S7 in FIG. 6). The drying process includes a process of drying the substrate W by controlling the substrate rotator 3 to increase the rotation speed of the substrate W to a ninth rotation speed. The ninth rotation speed is, for example, 2500 rpm.

[0183] Specifically, as shown in FIG. 15, the control device 10 (control unit 11) controls the rinsing liquid supply unit 43 to stop the supply of the rinsing liquid, and then controls the substrate rotation unit 3 to increase the rotation speed of the substrate W to a ninth rotation speed. As a result, a large centrifugal force is applied to the rinsing liquid on the substrate W, and the rinsing liquid adhering to the substrate W is scattered around the substrate W. In this manner, the rinsing liquid is removed from the substrate W and the substrate W is dried. The rinsing liquid scattered from the substrate W is received by the third guard unit 6c (third guard 61c). The rinsing liquid received by the third guard unit 6c is discharged to the drain tank 84 by the second drainage unit 82.

[0184] When a predetermined eighth set time has elapsed since the start of the drying process, the control device 10 (controller 11) controls the substrate rotator 3 to stop the rotation of the substrate W. As a result, the drying process ends. The eighth set time may be selected, for example, from the range of 20 seconds to 30 seconds.

[0185] After the drying process is completed, the controller 10 (controller 11) executes a substrate unloading process (step S8 in FIG. 6) and ends the process shown in FIG. 6. Specifically, the controller 10 (controller 11) controls the third lifting section 73 to move the third guard section 6c to the lower position. The controller 10 (controller 11) also controls the substrate holding section 2 to release the substrate holding section 2 from its hold on the substrate W. The controller 10 (controller 11) then controls the center robot CR to unload the substrate W from the processing chamber 201.

[0186] According to this embodiment, the control device 10 (controller 11) controls the substrate rotation unit 3 to rotate the substrate W during the removal process at a rotation speed (third rotation speed) lower than the rotation speed (ninth rotation speed) of the substrate W during the drying process. Therefore, the substrate W is not dried by the removal process.

[0187] Furthermore, according to this embodiment, during the removal process, the substrate W is rotated at a rotation speed that is closer to the rotation speed of the substrate W at the start of the second chemical liquid process (fourth rotation speed) than the rotation speed of the substrate W during the drying process (ninth rotation speed). Therefore, after the removal process, the rotation speed of the substrate W can be quickly adjusted to the rotation speed at the start of the second chemical liquid process (fourth rotation speed). Therefore, the second chemical liquid process can be started in a short time after the removal process.

[0188] Moreover, according to this embodiment, the execution time of the removal process (fourth set time) is shorter than the execution time of the drying process (eighth set time). Therefore, the length of time of the removal step (step S4 in FIG. 6) is shorter than the length of time of the drying step (step S7 in FIG. 6). In other words, the control device 10 (control unit 11) executes the removal process in a shorter time than the drying process. Therefore, the substrate W is not dried by the removal process. Also, the second chemical liquid process can be started in a short time after the end of the first rinse process (puddle process).

[0189] An embodiment of the present invention has been described above with reference to Fig. 1 to Fig. 15. According to this embodiment, the rinsing liquid that has entered the recess 320 can be removed from the substrate W without supplying IPA vapor or nitrogen gas. Therefore, the rinsing liquid that has entered the recess 320 can be removed from the substrate W with a simpler configuration.

[0190] Moreover, according to this embodiment, even in the case of a pattern PT with a high aspect ratio, the rinsing liquid can be removed from the recess 320 by the removal process. Therefore, even in the case of a pattern PT with a high aspect ratio, the second chemical liquid can be allowed to penetrate into the recess where no rinsing liquid remains. In other words, the rinsing liquid can be replaced with the second chemical liquid from the opening to the deepest part of the recess 320 included in the pattern PT with a high aspect ratio. Therefore, even in the case of a pattern PT with a high aspect ratio, the recess amount of the recess 333 can be made substantially uniform from the opening to the deepest part of the recess 320.

[0191] Depending on the pretreatment of the substrate W to be processed by the substrate processing apparatus 100, the amount of polysilicon at the end E of the substrate W may be greater than that at the center of the substrate W. In this case, if the amount of etching of the polysilicon layer 332 is made substantially the same between the center and the end E of the substrate W, the dimension in the surface direction D3 of the polysilicon layer 332 after the etching process may not be uniform between the center and the end E of the substrate W.

[0192] In contrast, according to the present embodiment, the rotation speed of the substrate W is reduced when the second discharge nozzle 42a is located at the first end facing position P1 in the scan process. Thus, compared to the case where the rotation speed of the substrate W is not reduced when the second discharge nozzle 42a is located at the first end facing position P1, the amount of the second chemical liquid (TMAH) discharged from the substrate W when the second discharge nozzle 42a is located at the first end facing position P1 can be reduced. Therefore, the amount of etching at the end E of the substrate W can be increased compared to the central portion of the substrate W. As a result, even if the amount of polysilicon at the end E of the substrate W is greater than that at the central portion of the substrate W, the dimension in the surface direction D3 of the polysilicon layer 332 after the etching process can be made substantially uniform between the central portion and the end E of the substrate W.

[0193] Moreover, according to the present embodiment, by adjusting the second stop time, it is possible to adjust the amount of etching at the end E of the substrate W. For example, by increasing the second stop time, it is possible to further increase the amount of etching at the end E of the substrate W.

[0194] The present invention is not limited to the above-mentioned embodiment, and can be implemented in various aspects without departing from the gist of the present invention. In addition, the components disclosed in the above-mentioned embodiment can be modified as appropriate. For example, some of all the components shown in one embodiment may be added to the components of another embodiment, or some of all the components shown in one embodiment may be deleted from the embodiment.

[0195] The drawings are mainly schematic illustrations of each component to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configurations of each component shown in the above embodiment are merely examples and are not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0196] For example, in the embodiment described with reference to Figures 1 to 15, the first chemical liquid was DHF and the second chemical liquid was TMAH, but the first chemical liquid and the second chemical liquid are not particularly limited as long as they are chemical liquids for which different guard parts 6 are used.

[0197] In the embodiment described with reference to FIGS. 1 to 15, the substrate processing is an etching process, but the substrate processing is not particularly limited as long as it is a process for a substrate (substrate W) having a pattern PT having recesses 320.

[0198] 1 to 15, the rotation of the substrate W is stopped during the puddle process, but during the puddle process, the substrate W may be rotated at a rotation speed that does not cause the rinsing liquid to be discharged from the substrate W. For example, during the puddle process, the substrate W may be rotated at a rotation speed of 10 rpm.

[0199] 1 to 15, the puddle process is performed before the removal process, but the puddle process may be omitted. In this case, while the rinsing liquid is being supplied to the substrate W from the third discharge nozzle 43a, the guard part 6 surrounding the substrate W is replaced from the first guard part 6a to the second guard part 6b.

[0200] 1 to 15, the substrate processing apparatus 100 is provided with one drain tank 84, but the substrate processing apparatus 100 may be provided with two drain tanks 84. In this case, the first drainage section 81 may drain the processing liquid collected in the first cup 62a to one drain tank 84, and the second drainage section 82 may drain the processing liquid collected in the third cup 62c to the other drain tank 84. The substrate processing apparatus 100 may be provided with three or more drain tanks 84.

[0201] Further, in the embodiment described with reference to Figures 1 to 15, a portion of the processing liquid discharged from the substrate W is caused to flow into the drain tank 84, but the drainage section 8 may also cause a portion of the processing liquid discharged from the substrate W to flow into a waste liquid line of the factory in which the substrate processing apparatus 100 is installed.

[0202] In addition, in the embodiment described with reference to FIGS. 1 to 15, only deionized water is used as the rinsing liquid (first rinsing liquid and second rinsing liquid), but different rinsing liquids may be used in the first rinsing step (step S3 in FIG. 6) and the second rinsing step (step S7 in FIG. 6).

[0203] 1 to 15, the substrate processing apparatus 100 is illustrated as having three guard parts 6 (first guard part 6a to third guard part 6c), but the substrate processing apparatus 100 may be provided with two guard parts 6 or four or more guard parts 6. In other words, it is sufficient for the substrate processing apparatus 100 to be provided with at least two guard parts 6.

[0204] 1 to 15, a clamping chuck that clamps the substrate W has been described as a configuration for holding the substrate W, but the configuration for holding the substrate W is not particularly limited as long as it can hold the substrate W horizontally. For example, a vacuum chuck may be used as a configuration for holding the substrate W. [Industrial Applicability]

[0205] The present invention is useful in methods and apparatus for processing substrates. [Explanation of symbols]

[0206] 2: Board holding part 3: Substrate rotation section 4: Processing liquid supply section 6: Guard section 6a: First guard section 6b: Second guard section 6c: Third guard section 7: Lifting section 9: Collection section 10: Control device 11: Control section 41: First chemical supply unit 42: Second chemical supply unit 43: Rinse liquid supply unit 61a: First Guard 61b: 2nd Guard 61c: 3rd Guard 71: First lift section 72: Second lift section 73: 3rd lift section 100: Substrate processing apparatus 320: Recess 330: Laminated structure 331: Silicon oxide layer 332: Polysilicon layer 333: Recess D1: Vertical direction D2: Thickness direction D3: Surface direction PT: Pattern S2: Step (first chemical process) S3: Step (first rinse step) S31: Step S32: Step (paddle process) S4: Step (removal process) S5: Step (second chemical process) S6: Step (second rinse step) S7: Step (drying process) W: Substrate

Claims

1. A substrate processing method for processing a substrate having a pattern including a recess, comprising the steps of: a first chemical step of supplying a first chemical solution to the substrate; a rinsing step of supplying a first rinsing liquid to the substrate; a removing step of rotating the substrate while stopping the supply of the first rinsing liquid to drain the first rinsing liquid from the recessed portion and remove the first rinsing liquid from the substrate; a second chemical liquid step of supplying a second chemical liquid to the substrate from which the first rinse liquid has been removed; Including, In the first chemical step, the first chemical is supplied to the rotating substrate, and the first chemical discharged from the substrate is received by a first guard surrounding the substrate; In the rinsing step, a guard surrounding the substrate is replaced from the first guard to a second guard; In the removing step, the first rinsing liquid discharged from the rotating substrate is received by the second guard; The substrate processing method, in the second chemical step, comprises supplying the second chemical liquid to the rotating substrate, and receiving the second chemical liquid discharged from the rotating substrate by the second guard.

2. The rinsing step includes: supplying the first rinse liquid to the rotating substrate; a puddle step of holding a liquid film of the first rinse liquid on the substrate; Including, The substrate processing method according to claim 1 , wherein in the puddle step, a guard surrounding the substrate is replaced from the first guard to the second guard.

3. 3 . The substrate processing method according to claim 1 , wherein the first rinsing liquid and the second chemical liquid received by the second guard are collected in the removing step and the second chemical liquid step. 4 .

4. 3. The substrate processing method according to claim 1, wherein in the removing step, the substrate is rotated at a rotational speed equal to a rotational speed of the substrate at a start of the second chemical liquid step.

5. The rinsing step is a first rinsing step, The substrate processing method includes: a second rinsing step of supplying a second rinsing liquid to the rotating substrate to rinse the second chemical liquid from the substrate; a drying step of increasing the rotation speed of the substrate to dry the substrate; Further comprising:

3. The substrate processing method according to claim 1, wherein in the removing step, the substrate is rotated at a rotation speed lower than a rotation speed at which the substrate is rotated in the drying step.

6. The rinsing step is a first rinsing step, The substrate processing method includes: a second rinsing step of supplying a second rinsing liquid to the rotating substrate to rinse the second chemical liquid from the substrate; a drying step of increasing the rotation speed of the substrate to dry the substrate; Further comprising:

3. The substrate processing method according to claim 1, wherein a duration of the removing step is shorter than a duration of the drying step.

7. 3. The substrate processing method according to claim 1, wherein the pattern includes a multi-layered structure in which polysilicon layers and silicon oxide layers are alternately stacked.

8. The substrate processing method according to claim 7 , wherein the multi-layered laminate structure includes a laminate structure of 80 layers or more.

9. the recess is recessed in a stacking direction in which the polysilicon layers and the silicon oxide layers are alternately stacked, 8. The substrate processing method according to claim 7, wherein the second chemical process includes a process of etching the polysilicon layer to form a recessed portion on an inner side surface of the recess.

10. The first chemical solution includes an acidic chemical solution, 3. The substrate processing method according to claim 1, wherein the second chemical liquid includes an alkaline chemical liquid.

11. A substrate processing apparatus for processing a substrate having a pattern including a recess, a substrate holder that holds the substrate horizontally; a substrate rotating unit that rotates the substrate holding unit about a central axis extending in a vertical direction to rotate the substrate integrally with the substrate holding unit; a processing liquid supply unit for supplying a processing liquid to the substrate; a plurality of guards surrounding the substrate and receiving the processing liquid discharged from the substrate; a lifting unit that lifts and lowers the plurality of guards individually to replace the guard surrounding the substrate among the plurality of guards; a control unit for controlling the substrate rotating unit, the processing liquid supplying unit, and the lifting unit; Equipped with the processing liquid includes a first chemical liquid, a first rinse liquid, and a second chemical liquid; the plurality of guards includes a first guard and a second guard, The control unit is a first chemical liquid processing step of controlling the processing liquid supply unit to supply the first chemical liquid to the substrate; a rinsing process in which the processing liquid supply unit is controlled to supply the first rinsing liquid to the substrate; a removal process of controlling the substrate rotation unit to rotate the substrate while stopping the supply of the first rinsing liquid by controlling the processing liquid supply unit, and discharging the first rinsing liquid from the recessed portion to remove the first rinsing liquid from the substrate; and a second chemical liquid processing step of controlling the processing liquid supply unit to supply the second chemical liquid to the substrate from which the first rinsing liquid has been removed; a process of controlling the substrate rotation unit to rotate the substrate during the first chemical liquid processing, the rinsing processing, and the second chemical liquid processing; a process of controlling the lifting unit to receive, by the first guard, the first chemical liquid discharged from the rotating substrate during the first chemical liquid processing; a process of controlling the lifting unit during the rinsing process, switching a guard surrounding the substrate from the first guard to the second guard, and receiving the first rinsing liquid and the second chemical liquid discharged from the rotating substrate by the second guard during the removal process and the second chemical liquid process; The substrate processing apparatus performs the above steps.

12. The rinsing process includes: a process of controlling the substrate rotation unit to rotate the substrate and controlling the processing liquid supply unit to supply the first rinsing liquid to the rotating substrate; a puddle process for holding a liquid film of the first rinse liquid on the substrate; Including, The substrate processing apparatus according to claim 11 , wherein the control unit controls the lifting unit during the puddle processing to switch a guard surrounding the substrate from the first guard to the second guard.

13. The substrate processing apparatus according to claim 11 , further comprising a recovery unit that recovers the first rinsing liquid and the second chemical liquid received by the second guard.

14. 13. The substrate processing apparatus according to claim 11, wherein the control unit controls the substrate rotation unit to rotate the substrate during the removal process at a rotation speed equal to a rotation speed of the substrate at a start of the second chemical liquid treatment.

15. the rinsing process is a first rinsing process, The control unit is a second rinsing process in which the substrate rotating unit is controlled to rotate the substrate while the processing liquid supply unit is controlled to supply a second rinsing liquid to the substrate to rinse the second chemical liquid from the substrate; a drying process for drying the substrate by controlling the substrate rotating unit to increase the rotation speed of the substrate; Further execute The substrate processing apparatus according to claim 11 , wherein the control unit controls the substrate rotation unit to rotate the substrate at a rotation speed during the removal process that is lower than a rotation speed of the substrate during the drying process.

16. the rinsing process is a first rinsing process, The control unit is a second rinsing process in which the substrate rotating unit is controlled to rotate the substrate while the processing liquid supply unit is controlled to supply a second rinsing liquid to the substrate to rinse the second chemical liquid from the substrate; a drying process for drying the substrate by controlling the substrate rotating unit to increase the rotation speed of the substrate; Further execute The substrate processing apparatus according to claim 11 , wherein the control unit performs the removal process in a shorter time than the drying process.

17. The substrate processing apparatus according to claim 11 or 12, wherein the pattern includes a multi-layered structure in which polysilicon layers and silicon oxide layers are alternately stacked.

18. The substrate processing apparatus of claim 17 , wherein the multi-layer stack structure includes a stack structure of 80 or more layers.

19. the recess is recessed in a stacking direction in which the polysilicon layers and the silicon oxide layers are alternately stacked, The substrate processing apparatus according to claim 17 , wherein the control unit etches the polysilicon layer by the second chemical solution treatment to form a recessed portion on an inner side surface of the recess.

20. The first chemical solution includes an acidic chemical solution, The substrate processing apparatus according to claim 11 or 12, wherein the second chemical liquid includes an alkaline chemical liquid.

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