Edge ring system for substrate processing system

Abstract

To provide an edge ring system for a substrate processing system.SOLUTION: In a substrate processing system, an edge ring system 300 has an upper edge ring 310 including a circular body 312 with an inner diameter and an outer diameter. The outer diameter of the upper edge ring is smaller than the horizontal opening of the substrate port of the substrate processing system. There is arranged a first edge ring 320 including a circular body 322 with an inner diameter and an outer diameter, below the upper edge ring. The outer diameter of the first edge ring is larger than that of the substrate port of the substrate processing system. The inner diameter of the first edge ring is smaller than that of the upper edge ring.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] [CROSS REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Application No. 62 / 882,901, filed August 5, 2019, the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates generally to plasma processing systems, and more particularly to edge ring systems. [Background technology]

[0003] The discussion of the background art provided herein is intended to present the contents of the present disclosure generally, and the inventions of the presently named inventors are not admitted expressly or impliedly as prior art to the present disclosure to the extent that they are described in this Background section and in a manner that is not prior art at the time of filing.

[0004] Substrate processing systems perform processes on substrates, such as semiconductor wafers. Examples of substrate processing include deposition, ashing, etching, cleaning, and / or other processes. To process the substrate, a process gas mixture may be supplied to a processing chamber. A plasma may be used to ignite the gases to promote a chemical reaction.

[0005] A substrate is disposed on a substrate support during processing. In some substrate processing systems, an annular edge ring is disposed around the substrate support adjacent to the radially outer edge of the substrate. The edge ring may be used to shape or focus the plasma on the substrate. During operation, exposed surfaces of the substrate and the edge ring are etched by the plasma. As a result, the edge ring wears over time and the effect of the edge ring on the plasma changes. Summary of the Invention

[0006] The edge ring system of the substrate processing system includes an upper edge ring including an annular body having an inner diameter and an outer diameter. The outer diameter of the upper edge ring is smaller than a horizontal opening of a substrate port of the substrate processing system. A first edge ring including an annular body having an inner diameter and an outer diameter is disposed below the upper edge ring. The outer diameter of the first edge ring is larger than the substrate port of the substrate processing system. The inner diameter of the first edge ring is smaller than the inner diameter of the upper edge ring.

[0007] In other features, a lower surface of the upper edge ring mates with an upper surface of the first edge ring. A second edge ring is positioned radially outward of a base plate of the substrate processing system below the first edge ring. The second edge ring includes an annular body, an upwardly projecting leg extending from a radially inner upper portion of the annular body, and a downwardly projecting leg extending from a radially outer lower portion of the annular body.

[0008] In other features, a third edge ring is positioned radially outward of the second edge ring below the first edge ring, the third edge ring including an annular body, a radially inwardly extending leg extending from a top portion of the annular body, and a protrusion extending upwardly from a radially outer top surface of the annular body.

[0009] In other features, the first edge ring includes an annular recess on its radially outer lower surface, and a protrusion of the third edge ring fits into the annular recess to define a stepped path.

[0010] In other features, an annular seal is disposed below the second edge ring between the third edge ring and a base plate of the substrate processing system. The annular seal includes an annular body and legs extending radially inward from a lower portion of the annular body. A diameter of a radially inner surface of the legs is smaller than an outer diameter of the base plate. A diameter of a radially inner surface of the annular body of the annular seal is larger than an outer diameter of the base plate.

[0011] In other features, the upper edge ring includes a cavity defined by a first edge ring and a lower inner surface of the upper edge ring between the radially inner leg and the radially outer leg of the upper edge ring, the lower inner surface being disposed vertically higher than a lower surface of the radially outer leg of the upper edge ring.

[0012] The substrate processing system includes an edge ring system and a substrate support including a base plate. A sealant is disposed on an outer surface of the base plate between the base plate and the annular seal and between the base plate and the second edge ring. The sealant is disposed between the base plate and a top portion of a leg of the annular seal.

[0013] The substrate processing system includes a substrate support including a base plate. A first edge ring is located radially outward of the base plate. A second edge ring is located radially outward of the first edge ring. An annular seal includes an annular body and legs extending radially inward from the annular body. The annular seal is disposed below the first edge ring and between the second edge ring and a base plate of the substrate processing system. A diameter of a radially inner surface of the legs is smaller than an outer diameter of the base plate. A diameter of a radially inner surface of the annular body is larger than an outer diameter of the base plate. A sealant is disposed on an outer surface of the base plate between the base plate and the annular seal and between the base plate and the first edge ring. A sealant is disposed on the base plate between the base plate and an upper surface portion of the legs of the annular seal.

[0014] A substrate support for a substrate processing system includes a base plate and a vertical hole defined in the base plate and including an upper opening and a lower opening. A fastener includes a body, a threaded portion, and a head. The fastener is received in the vertical hole and attaches the base plate to an underlying surface. A plug includes a body received in the upper opening of the vertical hole above the head of the fastener.

[0015] In other features, the plug further comprises a flange extending radially outward from the body, the flange extending radially outward from the top opening, and the plug is made of a material selected from the group consisting of ceramic, elastomer, and polytetrafluoroethylene (PTFE).

[0016] A substrate support for a substrate processing system includes a base plate and a vertical hole defined in the base plate, the vertical hole including an upper opening and a lower opening. An outer guide sleeve includes a first flange portion and a first cylindrical portion extending from the first flange portion and defining a first inner hole. The first cylindrical portion of the outer guide sleeve is inserted into the upper opening of the vertical hole with the first flange portion disposed adjacent the upper opening of the vertical hole. An inner guide sleeve includes a second flange portion and a second cylindrical portion extending from the second flange portion and defining a second inner hole configured to receive a lift pin. The inner guide sleeve is inserted into the bottom opening of the vertical hole and the first inner hole of the outer guide sleeve with the second flange portion disposed adjacent the lower opening of the vertical hole.

[0017] In other features, the upper opening of the vertical bore has a first diameter greater than an outer diameter of the first cylindrical portion and less than an outer diameter of the first flange portion, and the lower opening of the vertical bore has a second diameter less than the first diameter, greater than an outer diameter of the second cylindrical portion and less than an outer diameter of the second flange portion.

[0018] In other features, the first diameter of the upper opening is smaller than the second diameter of the lower opening.

[0019] The substrate processing system includes a substrate support, the edge ring is disposed about the substrate support, and the lift pins are received in the second inner bore of the inner guide sleeve.

[0020] In other features, the lowering surface includes a vertical bore below the base plate and vertically aligned with the vertical bore in the base plate. The guide sleeve includes a third flange portion and a third cylindrical portion extending from the third flange portion. The guide sleeve is positioned within the vertical bore of the lowering surface. The third flange portion is adjacent to the second flange portion.

[0021] In other features, the third flange portion includes a groove and further includes an O-ring disposed in the groove, the O-ring being biased by the third flange portion against a horizontal surface of the vertical bore.

[0022] The substrate support of the substrate processing system comprises a base plate. A vertical bore is defined in the base plate and comprises an upper opening and a lower opening. A support surface is located below the base plate and comprises a vertical bore having an upper opening and a lower opening. The vertical bore is vertically aligned with the vertical bore of the base plate. The guide sleeve comprises a flange portion and a cylindrical portion having an inner bore. The cylindrical portion is located within the vertical bore of the support surface. The flange portion is adjacent to the upper opening of the vertical bore of the support surface.

[0023] In another feature, the flange portion includes a groove in an underside thereof. The O-ring is disposed in the groove and is biased by the flange portion against a horizontal surface of the vertical hole in the support surface.

[0024] The substrate processing system includes a substrate support and an edge ring disposed about a periphery of the substrate support, the lift pins being received in the vertical holes in the base plate and the vertical holes in the guide sleeve.

[0025] A movable edge ring system for a substrate processing system includes an upper edge ring including an annular body. A first edge ring including an annular body with a vertical hole is disposed below the upper edge ring. A second edge ring is disposed below the first edge ring and includes an annular body with a vertical hole including an upper portion having a first diameter and a lower portion having a second diameter smaller than the first diameter. A guide sleeve includes an elongated annular body with a vertical hole and has an outer diameter smaller than the first diameter and larger than the second diameter. The vertical hole of the guide sleeve is aligned with the vertical hole of the first edge ring.

[0026] In other features, lift pins are received in the vertical holes for selectively moving the upper edge ring relative to the first edge ring and the second edge ring.

[0027] The substrate processing system includes a movable edge ring system, a substrate support including a base plate having a vertical hole aligned with the vertical hole of the second edge ring and the vertical hole of the first edge ring, and a guide sleeve for the lift pin located within the vertical hole of the substrate support.

[0028] In other features, the substrate support further comprises a heater plate disposed above the base plate, and the annular body of the second edge ring comprises legs projecting radially inward from a top surface of the annular body of the second edge ring above the heater plate and below the first edge ring.

[0029] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief description of the drawings]

[0030] The present disclosure will become better understood from the detailed description and the accompanying drawings.

[0031] [Figure 1]1 is a functional block diagram of an exemplary substrate processing system according to the present disclosure.

[0032] [Diagram 2] FIG. 2 is a functional block diagram of another exemplary substrate processing system according to the present disclosure.

[0033] [Diagram 3] 1 is a cross-sectional side view of an exemplary edge ring system according to the present disclosure.

[0034] [Figure 4] FIG. 2 is a cross-sectional side view of another exemplary edge ring system according to the present disclosure.

[0035] [Diagram 5] FIG. 2 is a cross-sectional side view of another exemplary edge ring system according to the present disclosure.

[0036] [Figure 6] 1 is a cross-sectional side view of a dual guide sleeve for guiding a lift pin of an edge ring system according to the present disclosure.

[0037] [Figure 7] FIG. 2 is a cross-sectional side view of an edge ring system with a lower guide sleeve for a lift pin according to the present disclosure.

[0038] [Figure 8] FIG. 1 is a cross-sectional side view of an edge ring system with an upper guide sleeve for a lift pin according to the present disclosure.

[0039] In the drawings, reference numbers may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0040] During substrate processing, the substrate is placed on a pedestal, such as an electrostatic chuck (ESC), process gases are supplied, and a plasma is ignited within the processing chamber, where exposed surfaces of components within the processing chamber are subjected to abrasion by the plasma.

[0041] For example, an annular edge ring is placed on the radially outer edge of the substrate to shape the plasma. After processing of multiple substrates, the exposed surface of the edge ring wears and is at a different height relative to the substrate. As a result, the effect of the edge ring on the plasma changes, altering the processing of the substrate. To reduce process variations due to edge ring wear without breaking vacuum, some processing chambers increase the edge ring height in situ to compensate for the wear. In many of these systems, the edge ring height is automatically adjusted based on the number of cycles and / or the total plasma processing exposure duration. Other systems measure the edge ring height and adjust the edge ring height based on the measured height.

[0042] 1 and 2, an example of a plasma processing chamber using a movable edge ring is shown. As can be appreciated, other types of plasma processing chambers can also be used. In FIG. 1, an exemplary substrate processing system 110 according to the present disclosure is shown. The substrate processing system 110 can be used to perform etching using a capacitively coupled plasma (CCP). The substrate processing system 110 includes a processing chamber 122 that surrounds the other components of the substrate processing system 110 and contains the RF plasma (if used).

[0043] When the plasma processing chamber 122 is placed in the tool, the plasma processing chamber may include a substrate port 123 that can be opened to a vacuum transfer module without breaking vacuum. Typically, the substrate port 123 has a horizontal opening dimension that is slightly larger than the diameter of the substrate to be processed and a vertical opening dimension that is significantly smaller than the horizontal opening dimension. In some examples, the substrate port 123 is wide enough to supply and replace an upper edge ring. Typically, the vertical opening dimension is wide enough to allow a robot end effector to place the substrate on the lift pins of the substrate support. The substrate processing system 110 includes an upper electrode 124 and a substrate support 126, such as an electrostatic chuck (ESC). During operation, a substrate 128 is positioned on the substrate support 126.

[0044] By way of example only, the upper electrode 124 may include a distributor 129, such as a showerhead, for introducing and distributing process gases. The gas distributor 129 may include a stem portion including one end connected to the top surface of the process chamber. A base portion is generally cylindrical and extends radially outward from the other end of the stem portion away from the top surface of the process chamber. The substrate-facing surface or faceplate of the showerhead base includes a number of holes through which precursors, reactants, etching gases, inert gases, carrier gases, other process gases, or purge gases flow. Alternatively, the upper electrode 124 may include a conductive plate, and process gases may be introduced in another manner.

[0045] The substrate support 126 includes a base plate 130 that functions as a lower electrode. The base plate 130 supports a heating plate 132, which may correspond to a ceramic multi-zone heating plate. A bonding layer 134 may be disposed between the heating plate 132 and the base plate 130. In some examples, the bonding layer 134 also provides a thermal resistance. The base plate 130 may include one or more channels 136 for flowing a coolant through the base plate 130.

[0046] The RF generation system 140 generates and outputs an RF voltage to either the upper electrode 124 or the lower electrode (e.g., the base plate 130 of the substrate support 126). The other of the upper electrode 124 and the base plate 130 may be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 140 may include an RF source 142 that generates an RF plasma that is delivered to the upper electrode 124 or the base plate 130 by a matched distribution network 144. In other examples, the plasma may be generated inductively or remotely.

[0047] Gas supply system 150 includes one or more gas sources 152-1, 152-2, ..., and 152-N (collectively, gas sources 152), where N is an integer greater than zero. Gas sources 152 are connected to manifold 160 by valves 154-1, 154-2, ..., and 154-N (collectively, valves 154) and mass flow controllers (MFCs) 156-1, 156-2, ..., and 156-N (collectively, MFCs 156). A secondary valve may be used between MFC 156 and manifold 160. In some examples, a secondary valve (not shown) is disposed between MFC 156 and manifold 160. Although one gas supply system 150 is shown, more than one gas supply system may be used.

[0048] The temperature controller 163 may be connected to a plurality of thermal control elements (TCEs) 164 disposed on the heating plate 132. The temperature controller 163 may be used to control the plurality of TCEs 164 to control the temperature of the substrate support 126 and the substrate 128. The temperature controller 163 may be in communication with a coolant assembly 166 to control the flow of coolant through the flow passages 136. For example, the coolant assembly 166 may include a coolant pump, a reservoir, and / or one or more temperature sensors. The temperature controller 163 operates the coolant assembly 166 to selectively flow coolant through the flow passages 136 to cool the substrate support 126.

[0049] Valves 170 and pumps 172 may be used to evacuate reactants from the processing chamber 122. A system controller 180 may be used to control the components of the substrate processing system 110. An edge ring system 182 including one or more edge rings may be positioned radially outward of the substrate 128 during plasma processing. An edge ring height adjustment system 184 includes one or more lift pins (shown in FIGS. 5 and 7 ) that may be used to adjust the height of one or more edge rings of the edge ring system 182 relative to the substrate 128, as described further below. In some examples, one or more edge rings of the edge ring system 182 may be lifted by the lift pins, removed by a robot end effector, and replaced with another edge ring without breaking vacuum.

[0050] For example, the system controller 180 controls an actuator 185 that controls the vertical position of lift pins 187 that bias the bottom surface of the edge ring 189. In this example, the system controller 180 senses the height of the edge ring 189 using a sensor 191. In some examples, the sensor 191 includes an optical sensor, a laser sensor, a piezoelectric sensor, an ultrasonic sensor, or other types of sensors. The system controller 180 adjusts the position of the edge ring 189 based on the sensed height of the edge ring 189.

[0051] 2 shows an example of a substrate processing system 210 according to the present disclosure. The substrate processing system 210 uses an inductively coupled plasma to perform etching. The substrate processing system 210 includes a coil driver circuit 211. A pulse circuit 214 may be used to pulse the RF power on and off or to vary the amplitude or level of the RF power. A tuning circuit 213 may be directly coupled to one or more inductive coils 216. The tuning circuit 213 adjusts the output of the RF source 212 to a desired frequency and / or a desired phase, matches the impedance of the coils 216, and divides the power between the coils 216.

[0052] In some examples, a plenum 220 may be disposed between the coil 216 and the dielectric window 224 to control the temperature of the dielectric window 224 by blowing hot and / or cold air. The dielectric window 224 is disposed along one side of a processing chamber 228. The processing chamber 228 further includes a substrate support 232. A substrate port 229 is disposed on one side of the processing chamber. In some examples, the substrate port 229 has a horizontal width sufficient to allow a top edge ring to be delivered and replaced without breaking vacuum.

[0053] The substrate support 232 may comprise an electrostatic chuck (ESC), or a mechanical chuck, or other type of chuck. A process gas is supplied to the process chamber 228 and a plasma 240 is generated inside the process chamber 228. The plasma 240 etches the exposed surface of the substrate 234 and wears away the edge ring. A drive circuit 252 (e.g., one of those described below) may be used to provide an RF bias to the electrodes of the substrate support 232 during operation.

[0054] A gas supply system 256 may be used to supply a process gas mixture to the process chamber 228. The gas supply system 256 may include a process gas and inert gas source 257, a gas metering system 258 (valves and mass flow controllers as described above), and a manifold 259. A gas supply system 260 may be used to supply gas 262 to the plenum 220 via a valve 261. The gas may include a cooling gas (air) used to cool the coil 216 and the dielectric window 224. A heater / cooler 264 may be used to heat / cool the substrate support 232 to a predetermined temperature. An exhaust system 265 includes a valve 266 and a pump 267 to remove reactants from the process chamber 228 by purging or evacuation.

[0055] A controller 254 may be used to control the etching process by monitoring system parameters and controlling the delivery of gas mixtures, igniting, maintaining and extinguishing the plasma, removing reactants, providing cooling gases, etc.

[0056] During plasma processing, an edge ring system 282 including one or more edge rings may be positioned radially outward of the substrate 234. A height adjustment system 284 may include one or more lift pins, as described below. The height adjustment system 284 may be used to adjust the height of one or more edge rings of the edge ring system 282. Also, the edge ring may be removed as needed when worn and replaced without breaking vacuum (e.g., when a vacuum transfer module is used). A controller 254 may be used to control the height adjustment system 284. For example, the controller 254 controls an actuator 285 that controls the vertical position of lift pins 287 that bias the bottom surface of the edge ring 289. In this example, the controller 254 adjusts the position of the edge ring 289 based on the RF exposure duration and / or the number of RF cycles.

[0057] 3, an edge ring system 300 according to the present disclosure is shown. The edge ring system 300 comprises an assembly of edge rings including an upper edge ring 310, an edge ring 320, an edge ring 340, and an edge ring 350. As shown, the upper edge ring 310 has an inverted "U" shaped cross section. The upper edge ring 310 comprises an annular body 312 connected to a radially inner leg 313 and a radially outer leg 314. In some examples, the upper edge ring 310 comprises a radially inner edge 318 and a radially outer edge 319. The upper edge ring 310 comprises a sloped surface 316 that slopes obliquely from a top surface of the upper edge ring 310 to the radially outer edge 319. In some examples, the angle is an acute angle, although other angles may be used.

[0058] The upper edge ring 310 has an upper surface located radially outward of the substrate and is raised relative to the substrate. The upper edge ring 310 is directly exposed to the plasma, while the other edge rings are shielded by the upper edge ring 310 or are located at a radially outer location where they are less exposed to plasma and less wear. As such, the upper edge ring 310 wears faster than the other edge rings. In some instances, the upper edge ring 310 is removed after a predetermined amount of wear. Generally, the other edge rings have a longer remaining life before replacement. Although a specific number of edge rings are shown in various embodiments, additional edge rings or fewer edge rings may be used. For example, two or more edge rings may be combined into one edge ring, or one edge ring may be split into two or more edge rings. The additional edge rings may be added to address coupling, wear, or structural support, or for other purposes.

[0059] The edge ring 320 has an "E" shaped cross section and comprises an annular body 322 that is located below the upper edge ring 310 and includes a radially inner leg 324, a middle leg 326, and an outer leg 328 extending upwardly from the annular body 322. The middle leg 326 is located between the radially inner leg 313 and the radially outer leg 314 of the upper edge ring 310. The radially inner leg 324 is located radially inward of the radially inner leg 313 of the upper edge ring 310 and below the substrate 128. The edge ring 320 comprises a radially inner edge 332 and a radially outer edge 334. The edge ring 320 further comprises an annular recess 336 located on a radially outer lower surface of the edge ring 320.

[0060] In some examples, the radially outer edge 319 of the top edge ring 310 has a diameter smaller than the diameter of the substrate port 229 to the processing chamber. In some examples, the radially outer edge 334 of the edge ring 320 is larger than the diameter of the substrate port 229 to the processing chamber. In some examples, the diameter of the radially inner edge 332 of the edge ring 320 is smaller than the diameter of the radially inner edge of the top edge ring 310. The top edge ring 310 can be removed through the substrate port without breaking vacuum, but the edge ring 320 cannot be removed through the substrate port (without breaking vacuum if a vacuum transfer module is used). The smaller inner diameter of the radially inner edge 332 and the larger outer diameter of the radially outer edge 334 of the edge ring 320 tend to keep out particles and reduce defects.

[0061] Edge ring 340 is positioned below upper edge ring 310 and edge ring 320. Edge ring 340 includes an annular body 342. An upwardly projecting leg 346 extends from an inner radially upper surface of annular body 342. A downwardly projecting leg 344 extends from an outer radially lower surface of annular body 342.

[0062] Edge ring 350 is located radially outward of edge ring 340 and below edge ring 320. Edge ring 350 includes an annular body 354. A radially inwardly protruding leg 352 extends from an upper portion of annular body 354. A protrusion 356 extends upwardly from an upper radially outer surface thereof. Annular recess 336 of edge ring 320 and protrusion 356 of edge ring 350 mate to define a serpentine or stepped path 358.

[0063] Beneath edge ring 340, an annular seal 360 is disposed between base plate 130 and edge ring 350. Annular seal 360 has an "L" shaped cross section. Annular seal 360 includes an annular body 362 and legs 364 that project radially inward from a lower portion of body 362. In some examples, a sealant 366 is attached to the outer surface of base plate 130 from the end of bonding layer 134 to the lower end of base plate 130.

[0064] In some examples, the seal material 366 and / or the annular seal 360 are made of a material such as an elastomer, polytetrafluoroethylene (PTFE), a ceramic material, or another material. The legs 364 of the annular seal 360 act as a retaining feature and limit vertical movement of the annular seal 360 during plasma processing. Without the legs 364, the annular seal 360 would tend to move upward over time. In addition, the annular seal 360 prevents plasma from entering the end region of the substrate support. In some examples, the radial inner surface 372 of the legs 364 has a smaller diameter than the radial outer surface 373 of the base plate 130. In some examples, the radial inner surface 374 of the annular body 362 is larger than the radial outer surface 373 of the base plate 130.

[0065] Base plate 130 is positioned above base plate supports 380, 382, ​​and 384. Base plate support 384 defines a gap below the lower surface of base plate 130 for receiving legs 364 of annular seal 360. Below heater plate 132 and above base plate 130, annular seal 370 is positioned radially outward of bonding layer 134. Annular seal 370 protects bonding layer 134 from plasma erosion and / or other contamination.

[0066] In some examples, edge ring system 300 includes lift pins (shown in the embodiments below) that selectively lift upper edge ring 310 relative to edge rings 320, 330, 340, and 350. Edge rings 320 and 340, as well as base plate 130, may include vertical holes (e.g., the holes shown in FIG. 4) through which the lift pins can move vertically, as shown in various embodiments below.

[0067] 4, an edge ring system 400 is shown. In some examples, the base plate 130 defines vertical holes 416 for receiving fasteners 410 including a body 418, a threaded portion 420, and a head 422. The fasteners 410 are circumferentially spaced around the base plate 130 and attach the base plate 130 to an underlying surface, such as the base plate supports 380, 382, ​​and / or 384. In some examples, the fasteners 410 are threaded into threaded holes in the base plate support 382.

[0068] The plug 430 includes a cylindrical body 431 having a diameter approximately equal to the upper opening 433 of the vertical bore 416. A lower cylindrical portion 432 of the plug 430, which is disposed in an opening 435 in the top surface of the fastener 410, has a smaller diameter. The top surface of the plug 430 includes a flange 434 extending radially outward from the cylindrical body 431. The flange 434 has a larger diameter than the upper opening 433 of the vertical bore 417.

[0069] In some examples, the plug 430 is made of a ceramic, an elastomer, polytetrafluoroethylene (PTFE), or other plasma resistant material. As can be appreciated, the plug 430 can be used in other locations as well.

[0070] The edge ring 440 comprises an annular body 442 including a downwardly projecting leg 444 extending from a radially outer edge of the annular body 442. An upwardly projecting leg 446 extends upwardly from a radially inner edge of the annular body 442. The edge ring 450 comprises an annular body 452 disposed below the downwardly projecting leg 444 of the edge ring 440.

[0071] Downwardly projecting legs 444 of edge ring 440 include a protrusion 462 located on its lower surface and an annular recess 460. Annular body 452 of edge ring 450 includes a protrusion 466 and an annular recess 464 located on its upper surface. Protrusion 462 and annular recess 460 of edge ring 440 mate with protrusion 466 and annular recess 464 of edge ring 450 to provide a stepped, serpentine, or labyrinth path to prevent or significantly reduce arcing. As can be appreciated, a similar stepped arrangement can be used with annular seal 360 and edge ring 340 described above.

[0072] 5, the edge ring system 500 includes an upper edge ring 510 having an inverted "U" shape. The upper edge ring 510 includes an annular body 512 that connects to a radially inner leg 513 and a radially outer leg 514. The upper edge ring 510 includes a radially inner edge 518 and a radially outer edge 519. The upper edge ring 510 includes a sloped surface 516 that slopes at an acute angle from a top surface of the upper edge ring 510 to the radially outer edge 519. A lower inner surface 544 of the upper edge ring 510 (located between the radially outer leg 514 and the radially inner leg 513) defines a cavity 546 for the edge ring 320. The lower inner surface 544 functions to center and hold the upper edge ring 570 when the upper edge ring 570 is lifted by one or more lift pins.

[0073] In some examples, the lower inner surface 544 extends parallel to a plane containing the substrate 128 (spaced from the edge ring 320 and slightly below the top surface of the middle leg 326 of the edge ring 320). The radial outer leg 514 extends adjacent to the edge ring 320 between the middle leg 326 and the outer leg 328. The edge ring 320 includes vertical holes 533 to allow lift pins to pass through.

[0074] The edge ring 520 includes an annular body 522 and an upwardly protruding leg 524 extending from a radially inner surface of the annular body 522. A downwardly protruding leg 526 extends downwardly from a radially outer lower surface of the annular body 522. A vertical hole 528 is located within the upwardly protruding leg 524 of the edge ring 520 to allow the lift pin 530 to move vertically. In some examples, the lift pin 530 includes a tapered upper portion 532. The edge ring 520 defines a protrusion 534 and an annular recess 535 to provide clearance for a guide sleeve 540 disposed in a vertical hole 542 in the base plate 130. In some examples, the lift pin 530 is coated with a ceramic or other material. The vertical hole 542 is aligned with the vertical holes 533 and 528.

[0075] 6, an edge ring system 600 includes a structure 610, such as a base plate, edge ring, or another type of support structure. The structure 610 defines a vertical bore 612. An outer guide sleeve 614 is inserted into the vertical bore 612 from a top opening. The outer guide sleeve 614 defines an inner bore 616 for receiving a lift pin (not shown). The outer guide sleeve 614 includes a flange portion 624 that extends radially outward beyond the top opening of the vertical bore 612. The outer guide sleeve 614 further includes a cylindrical portion 626 that extends downwardly in the vertical bore 612 near a bottom opening of the vertical bore 612. In some examples, the inner bore 616 widens radially at 628 below the opening of the vertical bore 612.

[0076] In some examples, the vertical bore 612 includes a lower portion 629 (disposed below the cylindrical portion 626 of the outer guide sleeve 614) having a diameter smaller than a diameter of an upper portion of the vertical bore 612. The inner guide sleeve 630 is inserted into the inner bore 616 of the outer guide sleeve 650 from a bottom opening. The inner guide sleeve 630 includes a flange portion 634 extending radially beyond the bottom opening of the vertical bore 612. The inner guide sleeve 630 further includes a cylindrical portion 636 extending from the flange portion 634 and defining an inner bore 638. The inner guide sleeve 630 is received in the inner bore 616 of the outer guide sleeve 614.

[0077] The structure 610 is disposed above a support surface 640 which defines a vertical bore 642 that aligns with the inner bore 638 of the inner guide sleeve 630. A lift pin (not shown) is received in the vertical bore 642 and the inner bore 638.

[0078] 7, a lower guide sleeve 710 for guiding a lift pin 730 is shown to include a flange portion 712 extending radially outward from a cylindrical portion 714 defining an inner bore 716. A lower surface of the flange portion 712 includes a groove 717 for engaging an upper surface of an O-ring 718. The O-ring 718 is biased by the lower guide sleeve 710 against an upper surface 722 of an upper bore 723 of the support surface 640. A lower bore 725 is located below the upper bore 723 and has a smaller diameter than the upper bore 723. The lift pin 730 is mutually received in the inner bore 716 of the lower guide sleeve 710 and the internal cavities of the lower and upper guide sleeves. The lower guide sleeve prevents or significantly reduces arcing in the terminal mating region.

[0079] 8, an edge ring system 800 is shown with an upper guide sleeve for lift pins. An upper edge ring 810 has an inverted "U" shape and includes an annular body 814, a radially inner leg 812, and a radially outer leg 816. An edge ring 820 is disposed below the edge ring 810 and includes an annular body 822, a radially inner leg 824 projecting upwardly from the annular body 822, and an intermediate leg 826 projecting upwardly from an intermediate portion of the annular body 822. A leg 827 projects radially outward from the annular body 822 and defines a vertical hole 828 for receiving a lift pin.

[0080] The edge ring 830 comprises an annular body 832 having a radially inwardly projecting leg 834 extending from an upper surface thereof and a downwardly projecting leg 836 extending downwardly from a radially outer lower surface of the annular body 832. The annular body 832 further defines an annular recess 838 and a protrusion 841 that receives and surrounds an upper portion of the guide sleeve 850. The protrusion 841 projects downwardly from a radially lower inner surface of the annular body 832 of the edge ring 830. The annular body 832 further comprises an upper hole 840 aligned with the lower hole 842. The lower hole 842 has a larger diameter than the upper hole 840.

[0081] Edge ring 845 is located radially outward of edge rings 810, 820, and 830. Edge ring 845 includes an annular body 846 having a radially inward protrusion 848 protruding from a middle portion of annular body 846. An annular recess 849 is located above radially inward protrusion 848 and is configured to receive edge rings 810 and 820.

[0082] The guide sleeve 850 is disposed in a vertical bore 852 in the base plate 130. The guide sleeve 850 includes a flange 853 that extends radially beyond an upper opening of the vertical bore 852. The guide sleeve 850 further includes a cylindrical portion 855 that extends downwardly into and along the vertical bore 852 from the flange 853. The guide sleeve 850 defines an inner bore 854. In some examples, a ceramic band 872 is disposed below the edge ring 830, between the base plate 130 and the annular body 846 of the edge ring 845.

[0083] An upper guide sleeve 880 is received in the bore 842. The upper guide sleeve 880 has an elongated donut shape with a central vertical bore 882. Lift pins 884 are received in the inner bore 854 of the guide sleeve 850, the upper and lower bores 840 and 842 of the edge ring 830, the central vertical bore 882 of the upper guide sleeve 880, and the vertical bore 828 of the edge ring 820. The upper guide sleeve 880 reduces arcing.

[0084] The foregoing is merely illustrative in nature and is not intended to limit the disclosure, its application, or uses in any way. The broad teachings of the disclosure may be embodied in various forms. Thus, while the disclosure includes certain examples, other variations will become apparent upon review of the drawings, the specification, and the following claims, and the true scope of the disclosure should not be so limited. It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having certain features, any one or more of those features described with respect to an embodiment of the disclosure may be implemented in other embodiments and / or may be implemented in combination with features of other embodiments (even if the combination is not specified). In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with each other remain within the scope of the disclosure.

[0085] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "adjacent," "on," "above," "below," and "disposed." When a relationship between a first element and a second element is described in the above disclosure, unless specified as "direct," the relationship may be a direct relationship in which there are no other intervening elements between the first element and the second element, but at the same time, it may be an indirect relationship in which there are one or more intervening elements (spatial or functional) between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted as meaning a logic using a non-exclusive logical OR (A OR B OR C), and not as meaning "at least one of A, at least one of B, and at least one of C."

[0086] In some embodiments, the controller is part of a system that may be part of the examples described above. Such systems may include semiconductor processing equipment with processing tools, chambers, processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics to control pre-, during, and post-processing operations of the semiconductor wafer or substrate. These electronics may be referred to as a "controller" that may control various components or sub-components of the system. The controller may be programmed to control any process disclosed herein, including supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid supply settings, position operation settings, wafer loading and unloading from the tool and other transport tools and / or load locks connected or coupled to the specific system, depending on the processing requirements and / or type of system.

[0087] In general, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in firmware format that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or one or more processing steps during the manufacture of a wafer die.

[0088] In some embodiments, the controller may be part of or coupled to a computer integrated or coupled with the system, or otherwise networked or combined with the system. For example, the controller may be in the "cloud" that allows remote access of wafer processing, or may be all or part of a fab host computer system. The computer may allow remote access to the system to monitor the progress of a manufacturing operation, to study the history of past manufacturing operations, to study trends or performance metrics from multiple manufacturing operations, and to modify parameters of a current process, or to set up a processing step following a current process, or to start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings that are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the controller is configured to connect to or control. Thus, as discussed above, the controller may be distributed, for example, by including one or more separate controllers networked together and cooperating toward a common purpose, such as a process or control as described herein. An example of a controller distributed for such purposes would be one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and that cooperate to control a process in the chamber.

[0089] Without being limited thereto, example systems may include plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and other semiconductor processing systems that may be related to or used in the fabrication and / or manufacturing of semiconductor wafers.

[0090] As described above, depending on the processing steps being performed by the tool, the controller may be in communication with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools installed throughout the factory, a main computer, another controller, or tools used to transport materials to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

1. 1. An edge ring system for a substrate processing system, comprising: an upper edge ring comprising an annular body having an inner diameter and an outer diameter, the outer diameter of the upper edge ring being smaller than a horizontal opening of a substrate port of the substrate processing system; a first edge ring disposed below the upper edge ring, the first edge ring comprising an annular body having an inner diameter and an outer diameter, the outer diameter of the first edge ring being larger than the substrate port of the substrate processing system, and the inner diameter of the first edge ring being smaller than the inner diameter of the upper edge ring; An edge ring system comprising:

2. 2. The edge ring system of claim 1, an edge ring system, wherein a lower surface of the upper edge ring mates with an upper surface of the first edge ring.

3. 10. The edge ring system of claim 1, further comprising: an edge ring system comprising a second edge ring positioned below the first edge ring and radially outward of a base plate of the substrate processing system;

4. 4. The edge ring system of claim 3, The second edge ring comprises: A ring-shaped body; an upwardly projecting leg extending from a radially inner upper portion of the annular body; a downwardly projecting leg extending from a radially outer lower portion of the annular body; An edge ring system comprising:

5. 4. The edge ring system of claim 3, further comprising: an edge ring system comprising a third edge ring positioned below the first edge ring and radially outward from the second edge ring.

6. 6. The edge ring system of claim 5, The third edge ring comprises: A ring-shaped body; a radially inwardly projecting leg extending from an upper portion of the annular body; a projection extending upwardly from a radially outer upper surface of the annular body; An edge ring system comprising:

7. 7. The edge ring system of claim 6, the first edge ring having an annular recess on its radially outer lower surface; an edge ring system, wherein the protrusion of the third edge ring mates with the annular recess to define a stepped path.

8. 6. The edge ring system of claim 5, further comprising: an edge ring system comprising an annular seal disposed below the second edge ring and between the third edge ring and the base plate of the substrate processing system;

9. 9. The edge ring system of claim 8, The edge ring system, wherein the annular seal comprises an annular body and legs extending radially inward from a lower portion of the annular body.

10. 10. The edge ring system of claim 9, An edge ring system, wherein the radially inner diameter of the legs is smaller than the outer diameter of the base plate.

11. 11. The edge ring system of claim 10, An edge ring system, wherein a diameter of a radially inner surface of the annular body of the annular seal is greater than the outer diameter of the base plate.

12. 2. The edge ring system of claim 1, the upper edge ring comprises a cavity defined by a lower inner surface of the upper edge ring between a radially inner leg and a radially outer leg of the upper edge ring and the first edge ring; an edge ring system, wherein the lower inner surface is disposed vertically higher than a lower surface of the radially outer leg of the upper edge ring.

13. 10. The edge ring system of claim 9, further comprising: An edge ring system comprising a sealant disposed on an outer surface of a base plate of a substrate support between the base plate and the annular seal and between the base plate and the second edge ring.

14. 14. The edge ring system of claim 13, The sealant is disposed between the base plate and a top portion of the annular seal.

15. 4. The edge ring system of claim 3, further comprising: a vertical hole defined in the base plate, the vertical hole having an upper opening and a lower opening; a fastener having a body, a threaded portion, and a head, the fastener being received in the vertical hole and attaching the base plate to an underlying surface; a plug having a body, the body of the plug being received in an upper opening of the vertical bore above the head of the fastener; An edge ring system comprising:

16. 16. The edge ring system of claim 15, The plug further includes a flange portion extending radially outward from the body, The flange portion extends radially outward from the upper opening.

17. 16. The edge ring system of claim 15, The edge ring system, wherein the plug is made of a material selected from the group consisting of ceramic, elastomer, and polytetrafluoroethylene (PTFE).

18. 2. The edge ring system of claim 1, The upper edge ring is movable relative to the first edge ring.

19. 20. The edge ring system of claim 18, further comprising: an edge ring system comprising lift pins received in vertical holes through the first edge ring for selectively moving the upper edge ring relative to the first edge ring;

20. 20. The edge ring system of claim 19, further comprising: an edge ring system including a second edge ring, the lift pins further configured to selectively move the upper edge ring relative to the second edge ring.

21. 20. The edge ring system of claim 19, further comprising: an actuator configured to bias the lift pins; a controller configured to cause the actuator to adjust a position of the lift pins in response to an output of a sensor and / or a predetermined period of time that the upper edge ring is exposed to a plasma; and An edge ring system comprising:

22. 1. A substrate support for a substrate processing system, comprising: A base plate; a vertical hole defined in the base plate, the vertical hole having an upper opening and a lower opening; an outer guide sleeve having a first flange portion and a first cylindrical portion extending from the first flange portion and defining a first inner bore, the first cylindrical portion of the outer guide sleeve being inserted into the upper opening of the vertical bore with the first flange portion disposed adjacent the upper opening of the vertical bore; an inner guide sleeve having a second flange portion and a second cylindrical portion extending from the second flange portion, the second cylindrical portion defining a second inner bore configured to receive a lift pin, the inner guide sleeve being inserted into a bottom opening of the vertical bore and into the first inner bore of the outer guide sleeve with the second flange portion disposed adjacent the bottom opening of the vertical bore; A substrate support comprising:

23. 23. The substrate support of claim 22, The upper opening of the vertical bore has a first diameter that is greater than an outer diameter of the first cylindrical portion and less than an outer diameter of the first flange portion.

24. 24. The substrate support of claim 23, the lower opening of the vertical bore has a second diameter smaller than the first diameter, larger than an outer diameter of the second cylindrical portion, and smaller than an outer diameter of the second flange portion.

25. 23. The substrate support of claim 22, The substrate support, wherein the first diameter of the upper opening is smaller than the second diameter of the lower opening.

26. 23. The substrate support of claim 22, further comprising: an edge ring disposed around the substrate support; a lift pin received in the second inner bore of the inner guide sleeve; A substrate support comprising:

27. 23. The substrate support of claim 22, further comprising: a lowering surface located below the base plate and having a vertical hole aligned perpendicular to the vertical hole of the base plate; a guide sleeve having a third flange portion and a third cylindrical portion extending from the third flange portion, the guide sleeve being positioned within the vertical bore of the lowering surface, the third flange portion being adjacent to the second flange portion; A substrate support comprising:

28. 28. A substrate support according to claim 27, comprising: The substrate support, wherein the third flange portion has a groove, and further comprising an O-ring disposed in the groove.

29. 29. The substrate processing system of claim 28, The O-ring is biased against a horizontal surface of the vertical hole by the third flange portion.

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