Multilayer electronic component

Abstract

To effectively dissipate heat generated in a multilayer electronic component to improve reliability of the multilayer electronic component.SOLUTION: One embodiment of the present invention provides a multilayer electronic component which includes: a body including a capacitance forming portion including a dielectric layer and internal electrodes, alternately arranged in a first direction, and cover portions disposed on both surfaces of the capacitance forming portion opposing in the first direction; and external electrodes disposed on the outside of the body and connected to the respective internal electrodes. The cover portions include a first dielectric material having a perovskite structure represented by general formula ABO3, and a first metal including one or more of Cu, W, Ag, and Zn. In at least a region of the cover portions, a content of the first metal is 2.0 moles or more and 9.0 moles or less, based on 100 moles of a B-site element.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a multilayer electronic component. [Background technology]

[0002] Multi-layered ceramic capacitors (MLCCs), a type of multilayer electronic component, are chip-type capacitors that are mounted on printed circuit boards of various electronic products, such as visual devices such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones, and mobile phones, and serve to charge and discharge electricity.

[0003] Recently, with the expansion of the electric vehicle market, the use of high-temperature and high-voltage multilayer ceramic capacitors with operating voltages of 250V or more in circuits such as automotive high-voltage battery chargers (OBCs) and DC / DC converters has expanded.

[0004] In such high-temperature and high-pressure environments, dielectric loss of the multilayer ceramic capacitor and self-heating due to metal resistance in the internal and external electrodes may occur. Such heat generation accelerates the deterioration of the dielectric layer and shortens the lifespan of the multilayer ceramic capacitor. Therefore, research into improving heat dissipation in multilayer ceramic capacitors is required. Summary of the Invention [Problem to be solved by the invention]

[0005] One of the various objects of the present invention is to improve the reliability of a multilayer electronic component by effectively dissipating heat generated inside the multilayer electronic component.

[0006] However, the object of the present invention is not limited to the above-mentioned contents, and can be more easily understood in the course of describing specific embodiments of the present invention. [Means for solving the problem]

[0007] One embodiment of the present invention provides a multilayer electronic component including: a main body including a capacitance-forming portion including dielectric layers and internal electrodes alternately arranged in a first direction; and covers arranged on both sides of the capacitance-forming portion facing each other in the first direction; and external electrodes arranged outside the main body and connected to the internal electrodes, wherein the cover includes a first dielectric material having a perovskite structure represented by the general formula ABO3 and a first metal including one or more of Cu, W, Ag, and Zn, and a content of the first metal in at least a portion of the cover is 2.0 mol to 9.0 mol per 100 mol of the B-site elements. [Effects of the Invention]

[0008] One of the various effects of the present invention is that it can effectively dissipate heat generated inside the multilayer electronic component, thereby improving the reliability of the multilayer electronic component. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a perspective view schematically illustrating a multilayer electronic component according to an embodiment of the present invention. [Figure 2] FIG. 2 is a cross-sectional view schematically showing a cross section taken along line II' in FIG. [Figure 3] FIG. 2 is a cross-sectional view schematically showing a cross section taken along line II-II′ in FIG. 1. [Figure 4] 1 is an exploded perspective view schematically illustrating a main body of a multilayer electronic component according to an embodiment of the present invention. [Figure 5] FIG. 3 is an enlarged view of a region K1 in FIG. 2. [Figure 6] FIG. 1 is a schematic diagram illustrating a method for evaluating heat generation in a multilayer electronic component. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into several other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes and sizes of elements in the drawings may be enlarged or reduced (or highlighted or simplified) for clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0011] In addition, in the drawings, parts not relevant to the description are omitted in order to clearly explain the present invention, and the size and thickness of each component shown in the drawings are arbitrarily shown for the convenience of explanation, so the present invention is not necessarily limited by the drawings. Furthermore, components having the same function within the same concept may be described using the same reference numerals. Furthermore, throughout the specification, when a part "comprises" a certain component, it does not mean that it excludes other components, but that it may further include other components, unless otherwise specified to the contrary.

[0012] In the drawings, the first direction can be defined as the thickness T direction, the second direction as the length L direction, and the third direction as the width W direction.

[0013] [Multilayer electronic components] FIG. 1 is a perspective view schematically showing a multilayer electronic component according to one embodiment of the present invention, FIG. 2 is a cross-sectional view schematically showing a cross section taken along line II' in FIG. 1, FIG. 3 is a cross-sectional view schematically showing a cross section taken along line II-II' in FIG. 1, FIG. 4 is an exploded perspective view schematically showing an exploded main body of a multilayer electronic component according to one embodiment of the present invention, and FIG. 5 is an enlarged view of area K1 in FIG. 2.

[0014] Hereinafter, a multilayer electronic component 100 according to one embodiment of the present invention will be described with reference to Figures 1 to 5. Furthermore, a multilayer ceramic capacitor (hereinafter referred to as "MLCC") will be described as an example of the multilayer electronic component, but the present invention is not limited thereto and may be applied to various multilayer electronic components, such as an inductor, a piezoelectric element, a varistor, or a thermistor, as long as it does not contradict the description of the multilayer ceramic capacitor.

[0015] The multilayer electronic component 100 according to an embodiment of the present invention may include a capacitance-forming portion Ac including a dielectric layer 111 and internal electrodes 121 and 122 , a body 110 including cover portions 112 and 113 , and external electrodes 131 and 132 .

[0016] Although there is no particular limitation on the specific shape of the body 110, the body 110 may be hexahedral or a similar shape as shown in the figure. Due to shrinkage of the dielectric material powder contained in the body 110 and grinding of the edges during the firing process, the body 110 may not be a hexahedral shape with perfectly straight lines, but may have a substantially hexahedral shape.

[0017] The main body 110 may have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in the second direction, a fifth surface 5 connected to the first surface 1 to the fourth surface 4 and facing each other in the third direction, and a sixth surface 6.

[0018] The main body 110 may include a capacitance forming portion Ac including dielectric layers 111 and internal electrodes 121, 122 arranged alternately in a first direction, and cover portions 112, 113 arranged on both sides of the capacitance forming portion Ac facing each other in the first direction.

[0019] The capacitance-forming portion Ac is disposed inside the body 110 and may include first internal electrodes 121 and second internal electrodes 122 that are alternately arranged with the dielectric layer 111 sandwiched therebetween, thereby forming a capacitance of the multilayer electronic component 100. The cover portions 112 and 113 may include first and second cover portions 112 and 113 that are respectively disposed on both sides of the capacitance-forming portion Ac that face each other in the first direction. The cover portions 112 and 113 may essentially serve to prevent damage to the capacitance-forming portion Ac due to physical or chemical stress.

[0020] According to an embodiment of the present invention, the cover portions 112 and 113 may include a first dielectric material and a first metal having a perovskite structure represented by a general formula ABO3. The A-site element may include, for example, Ca, and the B-site element may include, for example, Zr. The first dielectric material may include, for example, (Ca 1-x Sr x )(Zr 1-y Ti y )O3 (where x is in the range of 0≦x≦0.5 and y is in the range of 0≦y≦0.5). A detailed description of the first dielectric material will be given later.

[0021] As described above, self-heating of the multilayer electronic component 100 may occur in a high-temperature and high-pressure environment, and such heat generation may accelerate deterioration of the dielectric layer 111 and shorten the lifespan of the multilayer electronic component 100. Heat generated inside the multilayer electronic component 100 can be released to the outside of the multilayer electronic component 100 through the dielectric layer 111, which is mainly composed of the first dielectric material, and the internal electrodes 121, 122 and external electrodes 131, 132, which are mainly composed of metal having a relatively higher thermal conductivity than the covers 112, 113. However, because the covers 112, 113 occupy a considerable area of ​​the outer surface of the multilayer electronic component 100, it is necessary to activate heat dissipation through the covers 112, 113.

[0022] Therefore, in one embodiment of the present invention, the cover parts 112 and 113 constituting a part of the outer surface of the multilayer electronic component 100 contain the first metal, so that heat generated inside the multilayer electronic component 100 can also be released through the cover parts 112 and 113, thereby improving the reliability of the multilayer electronic component 100.

[0023] The first metal may be, for example, one or more of Cu, W, Ag, and Zn. Cu, W, Ag, and Zn are metal elements with excellent thermal conductivity among metal elements, and therefore can effectively dissipate heat generated inside the multilayer electronic component 100. More preferably, the first metal may be Cu. Cu has a thermal conductivity of approximately 397 W / (m·K) at 20°C, making it the second-highest thermal conductivity among metal elements, and is also inexpensive, so Cu is preferred as the first metal.

[0024] However, since the first metal is a conductor, the insulating properties of the cover portions 112 and 113 may be reduced as the content of the first metal in the cover portions 112 and 113 increases, which may result in a reduction in the insulation resistance of the laminated electronic component 100 or a reduction in the moisture resistance reliability.

[0025] Therefore, in one embodiment of the present invention, the content of the first metal in at least a portion of the cover portions 112 and 113 may preferably be 2.0 mol to 9.0 mol per 100 mol of the B-site elements. More preferably, the content of the first metal in at least a portion of the cover portions 112 and 113 may be 2.0 mol to 6.0 mol per 100 mol of the B-site elements. If the content of the first metal in at least a portion of the cover portions 112 and 113 is less than 2.0 mol per 100 mol of the B-site elements, the heat dissipation effect of the present invention may be insufficient. If the content of the first metal in at least a portion of the cover portions 112 and 113 is more than 9.0 mol per 100 mol of the B-site elements, the insulation resistance of the multilayer electronic component 100 may be reduced, or the moisture resistance reliability of the multilayer electronic component 100 may be reduced.

[0026] The method for measuring the content of the first metal contained in the cover portions 112 and 113 is not particularly limited. For example, cross sections of the body 110 cut at the center in the third direction are photographed using a scanning electron microscope (SEM) in the first and second directions, and then the content (at%) of the B-site element and the content (at%) of the first metal can be measured using energy dispersive spectroscopy (EDS) for any region within the cover portions 112 and 113, thereby measuring the content of the first metal per 100 moles of the B-site element. Alternatively, the content of the first metal contained in the cover portions 112 and 113 may be calculated by measuring the number of moles of the first metal per 100 moles of the B-site element at 10 or more equally spaced points in the first direction and averaging the measured number of moles. That is, the average content of the first metal contained in the cover portions 112 and 113 may be 2.0 moles or more and 9.0 moles or less per 100 moles of the B-site element. The content of the first metal contained in the cover portions 112 and 113 can also be measured using a measurement method commonly used in the industry.

[0027] In one embodiment, the cover portions 112 and 113 may have a standard deviation of the first metal content of 3.0 moles or less per 100 moles of the B-site element in the first direction. That is, the first metal content in the cover portions 112 and 113 may be relatively uniform along the first direction. To effectively dissipate heat generated in the capacitance forming portion Ac through the outer surfaces of the cover portions 112 and 113, it may be preferable that the first metal, which has high thermal conductivity, be uniformly distributed along the first direction.

[0028] An example of a method for measuring the standard deviation of the first metal content per 100 moles of the B-site element in the first direction will be described. For example, after obtaining images of cross sections in the first and second directions cut at the center of the third direction of the main body 110 using a scanning electron microscope (SEM), 10 or more, 20 or more, or 30 or more equally spaced points in the first direction on the cover portions 112 and 113 can be analyzed using energy dispersive spectroscopy (EDS). The B-site element content (at%) and the first metal content (at%) at each point can be measured, thereby determining the number of moles of the first metal per 100 moles of the B-site element at each point. The standard deviation of the first metal content can be obtained by calculating the variance of the measured number of moles of the first metal at each point and then taking the square root of the variance.

[0029] 5, the first dielectric material may include a plurality of dielectric crystal grains G and grain boundaries GB disposed between adjacent dielectric crystal grains. At least a portion of the first metal may be included in the plurality of dielectric crystal grains G. For example, Cu, W, Ag, Zn, etc. may be included in the dielectric crystal grains G by substituting an A-site element or a B-site element of the first dielectric material.

[0030] However, the present invention is not limited to this, and when the content of the first metal increases and the first metal is over-dissolved in the dielectric crystal grains G, at least a portion of the first metal can be present at the grain boundaries GB.

[0031] The thickness of the covers 112, 113 is not particularly limited. However, to achieve miniaturization and high capacity of the multilayer electronic component, the average thickness tc of the covers 112, 113 may be 600 μm or less, 400 μm or less, 200 μm or less, 100 μm or less, or 20 μm or less. The average thickness tc of the covers 112, 113 may be, for example, 5 μm or more, 20 μm or more, 100 μm or more, 200 μm or more, or 500 μm or more, but the present invention is not limited thereto. Here, the average thickness of the covers 112, 113 refers to the average thickness of each of the first cover 112 and the second cover 113.

[0032] The average thickness tc of the cover parts 112, 113 may mean the average size of the cover parts 112, 113 in the first direction, and may be the average value of the size of the cover parts in the first direction measured at five equally spaced points in the second direction in an image obtained by observing a cross section in the first and second directions cut from the center of the body 110 in the third direction using a scanning electron microscope (SEM).

[0033] The capacitance forming portion Ac of the body 110 may be formed by alternately stacking dielectric layers 111 and internal electrodes 121, 122. The plurality of dielectric layers 111 forming the body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 may be integrated to the extent that they are difficult to identify without using a scanning electron microscope (SEM).

[0034] The dielectric layer 111 may include the first dielectric material. The A-site element may include, for example, Ca, and the B-site element may include, for example, Zr. That is, the first dielectric material included in the dielectric layer 111 may include, for example, (Ca 1-x Sr x )(Zr 1-y Ti y )O3 (where x is in the range of 0≦x≦0.5 and y is in the range of 0≦y≦0.5). The dielectric layer 111 may include the first dielectric material as a main component.

[0035] When a ferroelectric material such as barium titanate (BaTiO3) is used as the dielectric material for the dielectric layer 111, it has a high dielectric constant at room temperature, but problems such as electrostrictive cracks and a decrease in capacitance may occur in high temperature and high pressure environments.

[0036] On the other hand, CaZrO3-based perovskite compounds, which are paraelectric, are characterized by a small temperature change in dielectric constant and small dielectric loss. That is, by using a CaZrO3-based compound as the first dielectric material contained in dielectric layer 111, the temperature change rate of capacitance and dielectric loss can be reduced, thereby ensuring the high-temperature reliability of the multilayer electronic component. That is, when cover portions 112 and 113 contain the first metal and dielectric layer 111 contains the first dielectric material, a multilayer electronic component 100 can be obtained that has excellent heat dissipation and electrical properties at high temperatures and pressures.

[0037] The dielectric layer 111 may include other minor components. For example, the dielectric layer 111 may include a first minor component including one or more of Mn, V, Cr, Fe, Ni, and Co. For example, the dielectric layer 111 may include a first minor component including Mn, and the first minor component may be Mn. The first minor component may impart reduction resistance, improve the densification of the microstructure, and maintain high-temperature life.

[0038] The content of the first subcomponent does not need to be particularly limited, but the content of the first subcomponent may be 0.1 mol or more and 2.0 mol or less per 100 mol of the B-site elements in at least a portion of the dielectric layer 111. If the content of the first subcomponent is less than 0.1 mol per 100 mol of the B-site elements, reduction resistance and reliability may be reduced, and if it exceeds 2.0 mol, side effects such as an increase in firing temperature and a decrease in high-temperature withstand voltage may occur.

[0039] The dielectric layer 111 may include a second minor component including one or more of Y, Dy, Ho, La, Ce, Nd, Sm, Gd, Er, and Zr. For example, the dielectric layer 111 may include a second minor component including Y, and the second minor component may be Y. The second minor component may play a role in controlling grain growth and uniforming the distribution of dielectric crystal grains, thereby improving reliability.

[0040] The content of the second subcomponent does not need to be particularly limited, but in at least a portion of the dielectric layer 111, the content of the second subcomponent can be 0.1 moles or more and 2.0 moles or less per 100 moles of the B-site element.

[0041] The dielectric layer 111 may include a third minor component containing, for example, Si. The third minor component can lower the sintering temperature and promote sinterability.

[0042] The content of the third subcomponent does not need to be particularly limited, but the content of the third subcomponent can be 0.1 mol or more and 2.0 mol or less per 100 mol of the B-site elements in at least a portion of the dielectric layer 111. If the content of the third subcomponent is less than 0.1 mol per 100 mol of the B-site elements, the density of the dielectric layer may decrease, and if it exceeds 2.0 mol, secondary phases may be generated, resulting in a decrease in the withstand voltage characteristics.

[0043] On the other hand, it may be preferable that the cover portions 112, 113 also contain the first to third subcomponents. Furthermore, in at least a portion of the cover portions 112, 113, the content of the first subcomponent may be 0.1 mol or more and 2.0 mol or less per 100 mol of the B-site elements, the content of the second subcomponent may be 0.1 mol or more and 2.0 mol or less per 100 mol of the B-site elements, and the content of the third subcomponent may be 0.1 mol or more and 2.0 mol or less per 100 mol of the B-site elements.

[0044] On the other hand, it is preferable that the dielectric layer 111 does not contain the first metal. The first metal contained in the covers 112 and 113 can improve the heat dissipation characteristics of the multilayer electronic component 100 without significantly affecting the electrical characteristics of the multilayer electronic component 100. However, if the dielectric layer 111 contains the first metal, which is a conductor, it may reduce the insulation resistance of the multilayer electronic component 100 or induce short-circuit defects.

[0045] Therefore, when the dielectric layer 111 contains the first metal, the concentration of the first metal contained in the dielectric layer 111 is preferably lower than the concentration of the first metal contained in the cover portions 112 and 113.

[0046] The internal electrodes 121, 122 may be alternately arranged with the dielectric layer 111. For example, a first internal electrode 121 and a second internal electrode 122, which are a pair of electrodes having different polarities, may be arranged to face each other across the dielectric layer 111. The first internal electrode 121 and the second internal electrode 122 may be electrically isolated from each other by the dielectric layer 111 arranged therebetween.

[0047] The first internal electrode 121 may be disposed to be spaced apart from the fourth surface 4 and extend toward the third surface 3. The second internal electrode 122 may be disposed to be spaced apart from the third surface 3 and extend toward the fourth surface 4.

[0048] The conductive metal contained in the internal electrodes 121, 122 does not need to be particularly limited, but may include, for example, one or more of Ni, Cu, Pd, Ag, Au, Pt, Sn, W, Ti, and alloys thereof.

[0049] Meanwhile, the internal electrodes 121 and 122 may contain, for example, Ni as a main component. Here, "main component" refers to a component that accounts for 50 at% or more of the components constituting the internal electrodes 121 and 122. However, if the dielectric layer 111 contains a CaZrO3-based compound as a main component and the internal electrodes 121 and 122 contain Ni as a main component, the CaZrO3-based compound may be reduced when the dielectric layer 111 and the internal electrodes 121 and 122 are simultaneously fired, resulting in a deterioration in dielectric properties. Therefore, in one embodiment, the internal electrodes 121 and 122 may contain Cu as a main component, which has better oxidation resistance than Ni. When the internal electrodes 121 and 122 contain Cu as a main component, the reduction of the CaZrO3-based compound can be easily prevented.

[0050] The average thickness td of the dielectric layer 111 is not particularly limited, but may be, for example, 1.0 μm or more and 50.0 μm or less. The average thickness te of the internal electrodes 121, 122 is not particularly limited, but may be, for example, 0.5 μm or more and 3.0 μm or less. In one embodiment, the average thickness td of the dielectric layer 111 may be more than twice the average thickness of the internal electrodes 121, 122. That is, td > 2 × te may be satisfied. In the case of electronic components for high-voltage electrical equipment, in order to prevent a decrease in breakdown voltage in a high-voltage environment, the breakdown voltage characteristics can be improved by making the average thickness of the dielectric layer 111 more than twice the average thickness of the internal electrodes 121, 122.

[0051] The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 refer to the size of the dielectric layer 111 and the internal electrodes 121 and 122 in the first direction, respectively. The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 can be measured by scanning cross sections of the body 110 in the first and second directions using a scanning electron microscope (SEM) with a magnification of 10,000. More specifically, the average thickness td of the dielectric layer 111 can be measured at multiple points on one dielectric layer 111, for example, 30 points equally spaced in the second direction, and then averaged. The average thickness te of the internal electrodes 121 and 122 can be measured at multiple points on one internal electrode 121 and 122, for example, 30 points equally spaced in the second direction, and then averaged. The 30 equally spaced points can be designated as capacitance forming portions Ac. Meanwhile, by performing such average value measurements on 10 dielectric layers 111 and 10 internal electrodes 121, 122, respectively, and then measuring the average values, the average thickness td of the dielectric layers 111 and the average thickness te of the internal electrodes 121, 122 can be further generalized.

[0052] The body 110 may include a first margin portion 114 and a second margin portion 115, which are respectively disposed on both sides of the capacitance forming portion Ac facing each other in the third direction. That is, the margin portions 114 and 115 may refer to regions between both ends of the internal electrodes 121 and 122 and the boundary surface of the body 110 in a cross section of the body 110 cut in the first and third directions.

[0053] The margin portions 114, 115 may contain the same material as the dielectric layer 111, except that they do not contain the internal electrodes 121, 122. In one embodiment, the margin portions 114, 115 may not contain the first metal. The margin portions 114, 115 may have a greater effect on the dielectric layer 111 and the internal electrodes 121, 122 than the cover portions 112, 113. Therefore, if the margin portions 114, 115 contain the first metal, which is a conductor, it may reduce the insulation resistance of the multilayer electronic component 100 or cause short-circuit defects. If the margin portions 114, 115 contain the first metal, the concentration of the first metal contained in the margin portions 114, 115 is preferably lower than the concentration of the first metal contained in the cover portions 112, 113.

[0054] The margin portions 114 and 115 may be formed by applying a conductive paste for the internal electrodes to the ceramic green sheets except for the areas where the margin portions are to be formed, and then firing the applied paste. Alternatively, in order to suppress steps due to the internal electrodes 121 and 122, the margin portions 114 and 115 may be formed by laminating a single dielectric layer or two or more dielectric layers on both sides of the capacitance-forming portion Ac facing each other in the third direction, after cutting the laminated sheets so that the internal electrodes 121 and 122 are exposed on the fifth surface 5 and the sixth surface 6 of the main body.

[0055] The average thickness tm of the margin portions 114, 115 does not need to be particularly limited. However, in order to reduce the size and increase the capacity of the multilayer electronic component, the average thickness tm of the margin portions 114, 115 may be 500 μm or less, 400 μm or less, 100 μm or less, 50 μm or less, or 20 μm or less. Here, the average thickness of the margin portions 114, 115 means the average thickness of each of the first margin portion 114 and the second margin portion 115.

[0056] The average thickness of the margin portions 114, 115 may refer to the average size of the margin portions 114, 115 in the third direction, and may be the average value of the size in the third direction measured at five equally spaced points on the cross section of the body 110 in the first and third directions.

[0057] The external electrodes 131, 132 may be disposed on the third surface 3 and the fourth surface 4 of the body 110 and may extend onto portions of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6. The external electrodes 131, 132 may include a first external electrode 131 connected to the first internal electrode 121 and a second external electrode 132 connected to the second internal electrode 122.

[0058] The external electrodes 131, 132 may include electrode layers 131a, 132a disposed on the third surface 3 and the fourth surface 4 and connected to the internal electrodes 121, 122, and plating layers 131b, 132b disposed on the electrode layers 131a, 132a. Specifically, the first external electrode 131 includes a first electrode layer 131a disposed on the third surface 3 and connected to the first internal electrode 121, and a first plating layer 131b disposed on the first electrode layer 131a, and the second external electrode 132 includes a second electrode layer 132a disposed on the fourth surface 4 and connected to the second internal electrode 122, and a second plating layer 132b disposed on the second electrode layer 132a.

[0059] The electrode layers 131a and 132a may include metal and glass. The metal included in the electrode layers 131a and 132a may serve to ensure electrical connectivity, and the glass may serve to improve bonding strength with the body 110.

[0060] The metal included in the electrode layers 131a and 132a may be formed using any material that has electrical conductivity, and the specific material may be determined in consideration of electrical properties, structural stability, etc. For example, the metal included in the electrode layers 131a and 132a may be one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0061] Meanwhile, the electrode layers 131a and 132a may be formed of only one layer containing metal and glass, but the present invention is not limited thereto, and the electrode layers 131a and 132a may have a multi-layer structure.

[0062] For example, the electrode layers 131a and 132a may include a first layer containing metal and glass and a second layer containing metal and resin disposed on the first layer. When the electrode layers 131a and 132a include the second layer, the warpage strength of the multilayer electronic component 100 can be improved.

[0063] The metal contained in the second layer is not particularly limited, and may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0064] The metal contained in the second layer may include one or more of spherical powder and flaky powder. That is, the metal contained in the second layer may be composed of only flaky powder, only spherical powder, or a mixture of flaky powder and spherical powder. Here, the spherical powder may include a shape that is not perfectly spherical, for example, a shape having a length ratio of the major axis to the minor axis (major axis / minor axis) of 1.45 or less. The flaky powder refers to a powder having a flat yet elongated shape, and is not particularly limited, but may have a length ratio of the major axis to the minor axis (major axis / minor axis) of 1.95 or more, for example. The lengths of the major axis and minor axis of the spherical powder and flaky powder can be measured from images obtained by scanning cross sections of the multilayer electronic component in the first and second directions cut at the center of the third direction using a scanning electron microscope (SEM).

[0065] The resin contained in the second layer may serve to ensure bonding and shock absorption. The resin may be any resin that has bonding and shock absorption properties and can be mixed with the metal powder to form a paste, and may include, for example, one or more resins selected from the group consisting of epoxy resin, acrylic resin, and ethyl cellulose.

[0066] In addition, the second layer may include a plurality of metal particles, an intermetallic compound, and a resin. The inclusion of the intermetallic compound may further improve electrical connectivity with the first layer. The intermetallic compound may connect the plurality of metal particles to improve electrical connectivity and may surround the plurality of metal particles to connect them to each other.

[0067] The intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin. That is, since the intermetallic compound includes a metal having a melting point lower than the curing temperature of the resin, the metal melts during the drying and curing process, forming an intermetallic compound with a portion of the metal particles and surrounding the metal particles. In this case, the intermetallic compound may preferably include a low-melting point metal of 300°C or less.

[0068] In one embodiment, the second layer may contain Sn. During the drying and curing process, the Sn melts and wets high-melting-point metal particles such as Ag, Ni, or Cu by capillary action, reacting with some of the Ag, Ni, or Cu metal particles to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, or Cu3Sn. The Ag, Ni, or Cu that is not involved in the reaction remains in the form of metal particles.

[0069] Thus, the plurality of metal particles may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0070] The plating layers 131b and 132b can improve mounting characteristics. The type of the plating layers 131b and 132b is not particularly limited and can be plating layers containing nickel (Ni), tin (Sn), palladium (Pd), and / or alloys containing these, or can be formed of multiple layers. The plating layers 131b and 132b can be, for example, a nickel (Ni) plating layer or a tin (Sn) plating layer, or can be formed by sequentially forming a nickel (Ni) plating layer and a tin (Sn) plating layer. The plating layers 131b and 132b can also include multiple nickel (Ni) plating layers and / or multiple tin (Sn) plating layers.

[0071] Although the drawings illustrate a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132, this is not limited thereto, and the number and shape of the external electrodes 131 and 132 may vary depending on the shape of the internal electrodes 121 and 122 or other purposes.

[0072] The size of the multilayer electronic component 100 is not particularly limited. However, one embodiment of the present invention can improve the high-temperature reliability of a multilayer electronic component for high temperature and high pressure. In particular, when the size of the multilayer electronic component 100 is 3216 (length x width, 3.2 mm x 1.6 mm) or more, the effect of improving the heat dissipation characteristics and electrical characteristics at high temperature and high pressure of the present invention can be more significant. That is, when the maximum dimension of the multilayer electronic component 100 in the second direction is 3.2 mm or more and the maximum dimension of the multilayer electronic component 100 in the third direction is 1.6 mm or more, the effect of improving reliability of the present invention can be more significant.

[0073] An example of a method for manufacturing the above-described multilayer electronic component 100 will now be described.

[0074] First, a first dielectric material powder is prepared for forming the dielectric layer 111. The first dielectric material powder may be, for example, (Ca 1-x Sr x )(Zr 1-y Ti y)O3 (wherein the range of x is 0≦x≦0.5 and the range of y is 0≦y≦0.5). The first dielectric material powder can be synthesized by a known method such as a solid-state reaction method, a hydrothermal synthesis method, a co-precipitation method, or an alkaline hydrolysis method.

[0075] Separately from the first dielectric material powder, secondary component powders are prepared. The secondary component powders may include, for example, first to third secondary component powders. The first secondary component powder may include an oxide or carbonate containing one or more of Mn, V, Cr, Fe, Ni, and Co. The second secondary component powder may include an oxide or carbonate containing one or more of Y, Dy, Ho, La, Ce, Nd, Sm, Gd, Er, and Zr. The third secondary component powder may include an oxide or carbonate containing Si.

[0076] Next, the prepared first dielectric material powder, subcomponent powder, an organic solvent such as ethanol, and a binder such as polyvinyl butyral may be mixed to prepare a slurry for the dielectric layer, and the slurry for the dielectric layer may be coated on a carrier film and dried to provide a green sheet for the dielectric layer.

[0077] Next, an internal electrode pattern is formed by printing a conductive paste for internal electrodes containing metal powder, binder, etc., on the dielectric layer green sheet to a predetermined thickness using a screen printing method, a gravure printing method, etc. Thereafter, the dielectric layer green sheet on which the internal electrode pattern is printed is peeled off from the carrier film, and then a predetermined number of dielectric layer green sheets on which the internal electrode pattern is printed are stacked to form a laminate.

[0078] Meanwhile, the cover part slurry can be obtained by further adding the first metal powder to the dielectric layer slurry. The first metal powder includes one or more of Cu, W, Ag, and Zn, and the content of the first metal powder included in the cover part slurry can be, for example, 1.1 to 3.3 parts by weight per 100 parts by weight of the first dielectric material powder. The cover part slurry can be applied to a carrier film and dried to provide a cover part green sheet, which can then be laminated on the top and bottom of the laminate in the first direction.

[0079] The laminate can then be cut into chips of a predetermined size. The binder contained in the cut chips can be removed, preferably through a debinding process. The conditions for the debinding process can vary depending on the type of binder used, and are not particularly limited. For example, the debinding process can be performed at a temperature of 180°C to 450°C for 0.5 to 24 hours.

[0080] The debindered chip is fired at a temperature of 1100° C. to 1300° C. to form the capacitor forming portion Ac including the dielectric layer 111 and the internal electrodes 121 and 122, and the body 110 including the cover portions 112 and 113.

[0081] Next, the external electrodes 131 and 132 are formed. The electrode layers 131a and 132a can be formed by dipping the third surface 3 and the fourth surface 4 of the body 110 in a conductive paste containing metal powder and glass, and then firing the paste. At this time, the firing temperature can be, for example, 700°C to 900°C.

[0082] On the other hand, when the electrode layers 131a and 132a include a first layer containing metal and glass and a second layer disposed on the first layer and containing conductive metal and resin, the second layer can be formed by applying a conductive resin composition containing metal powder and resin onto the first layer, drying the composition, and then performing a curing heat treatment at a temperature of 250°C to 550°C.

[0083] (Experimental example) <Sample production> First, Mn as a first minor component, Y as a second minor component, and Si as a third minor component were added to a first dielectric material powder for forming the dielectric layer 111, and then the first dielectric material was mixed with an organic solvent and a binder to prepare a slurry for the dielectric layer.

[0084] The above-mentioned dielectric layer slurry was applied to a carrier film and dried to provide a dielectric layer green sheet, and an internal electrode pattern was formed by printing a conductive paste for internal electrodes containing Ni powder, a binder, etc. to a predetermined thickness on the dielectric layer green sheet. Thereafter, the dielectric layer green sheet on which the internal electrode pattern was printed was peeled from the carrier film, and then a predetermined number of layers were stacked to form a laminate.

[0085] Next, a cover part slurry, which was made by further adding Cu powder to the dielectric layer slurry, was applied to a carrier film and dried to provide a cover part green sheet, and the cover part green sheet was laminated on the top and bottom of the first direction of the laminate.The laminate was then cut to have a predetermined chip size, and a binder removal process and a firing process were performed to form the main body 110.

[0086] Next, the main body 110 was dipped in a conductive paste containing Cu powder and glass, and then fired to form electrode layers 131a and 132a. On the electrode layers, plating layers 131b and 132b were formed in which a Ni plating layer and a Sn plating layer were sequentially formed, thereby providing a sample chip.

[0087] Samples 1 to 7 in Table 1 below were manufactured in the same manner, but the content of Cu powder contained in the slurry for the cover portion was changed within the range of 0 to 3.7 parts by weight per 100 parts by weight of the first dielectric material powder.

[0088] Next, cross sections in the first and second directions cut at the center of the body 110 of the sample chip in the third direction were photographed using a scanning electron microscope (SEM) under measurement conditions of an acceleration voltage of 10 kV, a current of 60 A, and a working distance of 8.5 mm. Energy dispersive spectroscopy (EDS) was then performed on 10 points equally spaced in the first direction in the center region of the cover in the second direction. The Cu content per 100 moles of the B-site elements at the 10 points was measured, and the average Cu content at the 10 points is listed in Table 1 below.

[0089] <Fever evaluation> Fig. 6 is a schematic diagram illustrating a method for evaluating heat generation of a multilayer electronic component. As shown in Fig. 6, a multilayer electronic component 100 was mounted on a printed circuit board 200, and then the printed circuit board 200 on which the multilayer electronic component 100 was mounted was placed on a hot plate 300. Measurement conditions (frequency: 100 kHz, temperature: 105°C, voltage: 630 V) were applied using a power supply (Keysight E36234A), an oscilloscope (Keysight DSOX1204A), and a source meter (Keysight 34972A), and the self-temperature change of the multilayer electronic component 100 was measured using a thermal imaging camera 400.

[0090] The ΔT shown in Table 1 below is the average value of the self-temperature change measured for five sample chips for each sample number.

[0091] <Moisture resistance reliability and IR evaluation> A total of 320 sample chips per sample number were mounted on a printed circuit board, and then a voltage of 630V was applied for 48 hours under conditions of a temperature of 85°C and a relative humidity of 85%, and the chips were judged to be defective if their IR (insulation resistance) value fell to 10% or less of the initial IR value. Table 1 below shows the percentage of defective sample chips out of the total number of sample chips per sample number.

[0092] The IR value was measured using an IR measuring device (VITREK QTPro II-950) under the conditions of a voltage of 630 V and a measurement time of 60 seconds.

[0093] [Table 1]

[0094] Referring to Table 1, it can be seen that sample 1 had an excessively large temperature change in the sample chip because the cover did not contain a first metal such as Cu. Sample 2 also had a cover containing less than 2.0 moles of Cu per 100 moles of B-site elements, and the temperature change in the sample chip was still large, with the difference in sample chip temperature change between sample 1 and sample 2 being only 0.3°C.

[0095] On the other hand, in sample No. 7, the cover contains 10 moles of Cu per 100 moles of B-site elements, and although the temperature change of the sample chip is small, it can be confirmed that the IR drops excessively, which causes poor moisture resistance.

[0096] On the other hand, in samples 3 to 6, the cover contains 2 to 9 moles of Cu per 100 moles of B-site elements, and it can be confirmed that the self-temperature change of the sample chip is reduced while the IR value is good. In particular, it can be confirmed that the difference in sample chip temperature change between sample 2 and sample 3 reaches 2.0°C.

[0097] Furthermore, it can be confirmed that the cover of samples 3 to 5 contains 2 to 6 moles of Cu per 100 moles of B-site elements, and the self-temperature change of the sample chip is reduced while maintaining an IR of 200 GΩ or more.

[0098] The present invention is not limited by the above-described embodiments and the accompanying drawings, but is limited by the appended claims. Therefore, various substitutions, modifications, and changes may be made by a person skilled in the art without departing from the technical spirit of the present invention as set forth in the claims, and these also fall within the scope of the present invention.

[0099] Furthermore, the expression "one embodiment" does not mean the same embodiment as another, but is provided to emphasize and describe each unique feature that is different from the others. However, the above-described one embodiment does not exclude being realized in combination with features of another embodiment. For example, even if a feature described in one embodiment is not described in another embodiment, it can be understood as being related to the other embodiment unless there is a description in the other embodiment that contradicts or contradicts the feature.

[0100] Furthermore, terms such as "first" and "second" are used to distinguish one element from another and do not limit the order and / or importance of the elements. In some cases, a first element may be termed a second element, and similarly, a second element may be termed a first element, without departing from the scope of the right. [Explanation of symbols]

[0101] 100 Multilayer electronic components 111 Dielectric layer 112, 113 Cover 114, 115 Margin 121, 122 Internal electrode 131, 132 External electrode 131a, 132a electrode layer 131b, 132b plating layer 200 Printed Circuit Boards 300 Hot Plate 400 Thermal Imaging Camera

Claims

1. a main body including a capacitance forming portion including dielectric layers and internal electrodes alternately arranged in a first direction, and cover portions arranged on both sides of the capacitance forming portion facing each other in the first direction; an external electrode disposed outside the body and connected to the internal electrode; The cover part has the general formula ABO ３ and a first metal including at least one of Cu, W, Ag, and Zn; a content of the first metal in at least a portion of the region of the cover is 2.0 mol or more and 9.0 mol or less per 100 mol of the B-site element.

2. 2. The multilayer electronic component according to claim 1, wherein the first metal is Cu.

3. 3. The multilayer electronic component according to claim 2, wherein the content of the first metal in at least a portion of the region of the cover is 6.0 mol or less per 100 mol of the B-site element.

4. 2 . The multilayer electronic component according to claim 1 , wherein the cover portion has a standard deviation of the content of the first metal per 100 moles of the B site element in the first direction of 3.0 moles or less.

5. the first dielectric material includes a plurality of dielectric grains and grain boundaries disposed between adjacent dielectric grains; The multilayer electronic component according to claim 1 , wherein at least a portion of the first metal is contained in the plurality of dielectric crystal grains.

6. the first dielectric material includes a plurality of dielectric grains and grain boundaries disposed between adjacent dielectric grains; The multilayer electronic component according to claim 1 , wherein at least a portion of the first metal is present in the crystal grain boundaries.

7. the dielectric layer comprises the first dielectric material; The A site elements include Ca, 2. The multilayer electronic component according to claim 1, wherein the B-site element includes Zr.

8. The first dielectric material is (Ca １－ｘ Sr ｘ ) (Zr １－ｙ Ti ｙ ) O ３ 2. The multilayer electronic component according to claim 1, wherein the range of x is 0≦x≦0.5, and the range of y is 0≦y≦0.

5.

9. The dielectric layer includes a first minor component including Mn, 8. The multilayer electronic component according to claim 7, wherein the content of the first minor component in at least a partial region of the dielectric layer is 0.1 moles or more and 2.0 moles or less per 100 moles of the B-site element.

10. the dielectric layer includes a second subcomponent including Y; 8. The multilayer electronic component according to claim 7, wherein the content of the second minor component in at least a partial region of the dielectric layer is 0.1 moles or more and 2.0 moles or less per 100 moles of the B-site element.

11. the dielectric layer includes a third minor component including Si; 8. The multilayer electronic component according to claim 7, wherein the content of the third minor component in at least a partial region of the dielectric layer is 0.1 moles or more and 2.0 moles or less per 100 moles of the B-site element.

12. The laminated electronic component according to claim 1 , wherein the dielectric layer does not contain the first metal.

13. the dielectric layer comprises the first metal; 2. The multilayer electronic component according to claim 1, wherein a concentration of the first metal contained in the dielectric layer is lower than a concentration of the first metal contained in the cover portion.

14. the main body includes a first surface and a second surface facing each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and facing each other in the second direction, and a fifth surface and a sixth surface connected to the first surface and the fourth surface and facing each other in the third direction, the external electrodes are disposed on the third surface and the fourth surface, 2. The multilayer electronic component according to claim 1, wherein the maximum size of the multilayer electronic component in the second direction is 3.2 mm or more, and the maximum size of the multilayer electronic component in the third direction is 1.6 mm or more.

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