Temperature adjustment device, lithography device, and method for manufacturing article

Abstract

To provide a temperature adjustment device that suppresses generation of condensation or frosting.SOLUTION: A temperature adjustment device that adjusts the temperature of gas has: a cooling part which cools the gas; a first measurement part which measures the temperature and humidity of the gas entering the cooling part; a heating part which heats the gas cooled by the cooling part; and a control part which performs control such that the cooling part cools the gas to bring the temperature of the gas to a temperature higher than a dew point temperature on the basis of the temperature and humidity of the gas measured by the first measurement part, and the heating part heats the gas to bring the temperature of the gas to a target temperature.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a temperature adjustment apparatus, a lithographic apparatus, and a method for manufacturing an article. [Background technology]

[0002] Maintaining a constant temperature inside a chamber in which a processing section of a lithography apparatus is located is an essential technique for maintaining the performance of the lithography apparatus. For example, in a process for manufacturing an article such as a semiconductor device, higher performance is required for the lithography apparatus as the semiconductor device becomes highly integrated in recent years. For example, in an exposure apparatus that exposes a substrate to light, it is necessary to further improve the substrate alignment accuracy and the pattern transfer accuracy. In order to guarantee the performance of the lithography apparatus, it is necessary to suppress the deterioration of performance due to the influence of thermal expansion, etc., and for this purpose, the processing section of the lithography apparatus is located in a chamber and the temperature inside the chamber is maintained constant.

[0003] Patent Document 1 discloses an exposure apparatus equipped with a machine room that supplies air regulated to a constant temperature and humidity into a chamber. Patent Document 1 also discloses that the machine room is provided with a cooler that cools the air collected from the exposure chamber, and a heater that heats the air cooled by the cooler to a predetermined temperature. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2007-155204 A Summary of the Invention [Problem to be solved by the invention]

[0005] In the exposure apparatus disclosed in Patent Document 1, when air is cooled to a temperature lower than the dew point temperature of the air entering the cooler, condensation or frost may occur in the cooler. Since condensation or frost may cause contamination of the lithography apparatus or a decrease in the cooling function of the cooler, it is desirable to suppress the occurrence of condensation or frost.

[0006] Therefore, an object of the present invention is to provide a temperature adjustment apparatus, a lithography apparatus, and a method for manufacturing an article that suppress the occurrence of condensation or frost. [Means for solving the problem]

[0007] The temperature control device of the present invention is a temperature control device that adjusts the temperature of a gas, and includes a cooling unit that cools the gas, a first measuring unit that measures the temperature and humidity of the gas entering the cooling unit, a heating unit that heats the gas cooled by the cooling unit, and a control unit that controls the cooling unit to cool the gas so that the temperature of the gas becomes higher than a dew point temperature based on the temperature and humidity of the gas measured by the first measuring unit, and controls the heating unit to heat the gas so that the temperature of the gas becomes a target temperature. Effect of the Invention

[0008] According to the present invention, it is possible to provide a temperature adjustment apparatus, a lithography apparatus, and a method for manufacturing an article, which suppress the occurrence of condensation or frost. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 illustrates a lithography apparatus including a temperature adjustment device according to a first embodiment. [Diagram 2] FIG. 2 is a diagram showing an exposure section that exposes a substrate. [Diagram 3] 3 is a flowchart showing a temperature adjustment method according to the first embodiment. [Figure 4] FIG. 13 illustrates a lithography apparatus including a temperature adjustment device according to a second embodiment. [Diagram 5]10 is a flowchart showing a temperature adjustment method according to a second embodiment. [Figure 6] FIG. 13 illustrates a lithography apparatus including a temperature adjustment device according to a third embodiment. [Figure 7] 10 is a flowchart showing a temperature adjustment method according to a third embodiment. [Figure 8] 1 is a flowchart illustrating the manufacture of a device. [Figure 9] 9 is a detailed flowchart of the wafer process in step 4 of the flowchart shown in FIG. 8. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a plurality of features, not all of these features are essential to the invention, and the plurality of features may be combined in any manner. Furthermore, in the accompanying drawings, the same reference numbers are given to the same or similar configurations, and duplicated descriptions are omitted. In addition, in the accompanying drawings, the drawings may be drawn at a scale different from the actual scale in order to make the present embodiment easy to understand.

[0011] First Embodiment 1 is a diagram showing a lithography apparatus 1000a including a temperature adjustment device 2a according to this embodiment. The lithography apparatus 1000a includes a temperature adjustment device 2a that adjusts the temperature of a gas, and a processing unit 13 that forms a pattern on a substrate. The temperature adjustment device 2a includes a cooler 3 (cooling unit) that cools the gas, a heater 15 (heating unit) that heats the gas, a temperature sensor 9 that measures the temperature of the gas entering the cooler 3, and a humidity sensor 10 that measures the humidity of the gas entering the cooler 3. Here, the temperature sensor 9 and the humidity sensor 10 may be collectively referred to as a first measurement unit.

[0012] The temperature adjustment device 2a cools the gas d, which is a combination of the gas c taken in from the outside and the gas b taken in from the chamber 1 in which the processing unit 13 is located, using the cooler 3. The temperature adjustment device 2a heats the gas e cooled by the cooler 3 using the heater 15 so that the temperature becomes a target temperature, and supplies the heated gas a to the chamber 1. In other words, the temperature adjustment device 2a adjusts the temperature of the gas in the chamber 1 by supplying the gas a, the temperature of which has been adjusted to the target temperature, to the chamber 1.

[0013] The temperature adjustment device 2a may have a blower 4 that sends the gas e cooled by the cooler 3 to the heater 15. In Fig. 1, the blower 4 is disposed downstream of the cooler 3 in the gas flow, but the blower 4 may be disposed upstream of the cooler 3 in the gas flow so as to send the gas to the heater 15 via the cooler 3.

[0014] The cooler 3 may have, for example, a refrigerator 5 that cools a refrigerant f, and may cool the gas d by heat exchange between the gas d and the refrigerant f. FIG. 1 shows an example in which the cooler 3 has a refrigerator 5, and in the example of FIG. 1, the refrigerator 5 has a compressor 6 that compresses the refrigerant f, a condenser 7 that condenses the refrigerant f, and an expansion valve 8 that expands the refrigerant f. The condenser 7 cools the refrigerant f by heat exchange between the refrigerant d and cooling water g. The cooler 3 may also have, for example, a Peltier element that electronically cools the gas d, and may cool the gas using the Peltier element.

[0015] The temperature adjustment device 2a has a first control unit 11 that controls the cooler 3 based on the measurement results of the temperature sensor 9 and the humidity sensor 10. The first control unit 11 is composed of, for example, a computer including a processor and a memory, and is connected to the cooler 3, the temperature sensor 9, and the humidity sensor 10 via lines to control the cooler 3 according to a program or the like.

[0016] The temperature adjustment device 2a may have a temperature sensor 14 (second measurement unit) that measures the temperature of the gas a heated by the heater 15, and a second control unit 12 that controls the heater 15 based on the measurement result of the temperature sensor 14. The second control unit 12 is composed of, for example, a computer including a processor and a memory, and is connected to the heater 15 and the temperature sensor 14 via a line to control the heater 15 according to a program or the like. In addition, the second control unit 12 may be connected to the processing unit 13 so as to be able to communicate with each other.

[0017] In addition, the first control unit 11 and the second control unit 12 may be configured as one control unit. In addition, a control unit including at least one of the first control unit 11 and the second control unit 12 may function as a control unit that controls the processing unit 13.

[0018] 2 is a diagram showing an exposure unit 13a that exposes a wafer W (substrate) as an example of the processing unit 13. Here, a lithography apparatus 1000a that includes the exposure unit 13a as the processing unit 13 may be referred to as an exposure apparatus. The exposure unit 13a includes a light source unit 100 including a light source, an illumination optical system 200, a reticle stage RS that holds a reticle R, a projection optical system 300, a wafer stage WS that holds a wafer W, which is a substrate, and a control unit 400.

[0019] The illumination optical system 200 includes lenses, mirrors, optical integrators, apertures, etc. (not shown), which adjust the light from the light source unit 100 and illuminate the reticle R, which is the illumination area. The reticle R is an original (mask) made of, for example, quartz glass, on which a pattern (for example, a circuit pattern) to be transferred onto the wafer W is formed. The reticle stage RS holds the reticle R and is movable in the X-, Y-, and Z-axis directions and in the rotational directions around each axis, and is driven by a driving mechanism such as a linear motor (not shown). The projection optical system 300 projects the light that has passed through the reticle R onto the wafer W at a predetermined magnification. The wafer W is a substrate made of, for example, single crystal silicon, with a photoresist (photosensitive material) applied on its surface. The wafer stage WS holds the wafer W via a wafer chuck (not shown), and is movable in the X-, Y-, and Z-axis directions and in the rotational directions around each axis, and is driven by a driving mechanism such as a linear motor (not shown).

[0020] The control unit 400 is configured by a computer including, for example, a CPU 401, a memory 402, and a display unit 403, and performs overall control of each unit of the exposure unit 13a to execute an exposure process for transferring a pattern formed on a reticle R onto a wafer W. The control unit 400 may be a control unit including at least one of the first control unit 11 and the second control unit 12, or may be a control unit different from the first control unit 11 and the second control unit 12.

[0021] Next, a temperature adjustment method in the temperature adjustment device 2a will be described. Fig. 3 is a flowchart showing a temperature adjustment method according to this embodiment. Each step of the flowchart in Fig. 3 will be described as being executed by either the first control unit 11 or the second control unit 12, but may be executed by one control unit.

[0022] In step S100, the first control unit 11 acquires the temperature of the gas d entering the cooler 3 measured by the temperature sensor 9 and the humidity of the gas d entering the cooler 3 measured by the humidity sensor .

[0023] In step S102, the first control unit 11 controls the cooler 3 to cool the gas d so that the temperature is higher than the dew point temperature of the gas d based on the temperature and humidity of the gas d acquired in step S100. The first control unit 11 stores information representing the relationship between the temperature and humidity of the gas d and the dew point temperature of the gas d in a memory (storage unit) (not shown), and acquires the dew point temperature of the gas d based on the information representing the relationship between the temperature and humidity of the gas d and the dew point temperature of the gas d. The information representing the relationship between the temperature and humidity of the gas d and the dew point temperature of the gas d may be, for example, a table representing the relationship between the temperature and humidity of the gas d and the dew point temperature of the gas d, or may be a formula representing the relationship between the temperature and humidity of the gas d and the dew point temperature of the gas d.

[0024] In step S104, the second control unit 12 controls the heater 15 to heat the gas e cooled by the cooler 3 so that the temperature of the gas e becomes a target temperature.

[0025] Then, gas a whose temperature has been adjusted to the target temperature is supplied to chamber 1.

[0026] As described above, according to the temperature adjustment device of this embodiment, the temperature of the gas cooled by the cooler is controlled to be higher than the dew point temperature, so that the occurrence of condensation or frost can be suppressed.

[0027] <Second embodiment> Next, a temperature adjustment device 2b according to the second embodiment will be described. Matters not mentioned as the second embodiment may follow the first embodiment. FIG. 4 is a diagram showing a lithography apparatus 1000b equipped with a temperature adjustment device 2b according to this embodiment. The difference from the lithography apparatus 1000a shown in FIG. 1 is that the temperature adjustment device 2b has a temperature sensor 16 (third measurement unit) that measures the temperature of the gas entering the heater 15, and the second control unit 12 acquires the temperature of the gas measured by the temperature sensor 16.

[0028] Fig. 5 is a flowchart showing a temperature adjustment method according to this embodiment. Each step of the flowchart in Fig. 5 will be described as being executed by either the first control unit 11 or the second control unit 12, but may be executed by one control unit. Steps S100, S102, and S104 in Fig. 5 are the same as those in Fig. 3, and therefore description thereof will be omitted.

[0029] In step S106, the second control unit 12 acquires the temperature of the gas entering the heater 15 measured by the temperature sensor 16, and determines whether the acquired temperature of the gas falls within a predetermined range. If the second control unit 12 determines in step S106 that the temperature of the gas acquired falls within the predetermined range, the process proceeds to step S104. If the second control unit 12 determines in step S106 that the temperature of the gas acquired does not fall within the predetermined range, the process proceeds to step S108. Here, the predetermined range can be, for example, a range in which the temperature of the gas measured by the temperature sensor 16 is lower than the target temperature of the gas to be supplied to the chamber 1. In other words, the second control unit 12 outputs an error when the temperature of the gas measured by the temperature sensor 16 is lower than the target temperature.

[0030] The predetermined range may be, for example, a temperature range in which the output of heater 15 for heating the gas to the target temperature falls within a predetermined range (for example, 10% to 90% of the maximum output of heater 15). In other words, second control unit 12 outputs an error when the output of heater 15 for heating the gas to the target temperature measured by temperature sensor 16 does not fall within the predetermined range.

[0031] In step S108, if it is determined in step S106 that the gas temperature is not within the predetermined range, the second control unit 12 outputs an error. Here, outputting an error may mean, for example, displaying the error on a display unit (not shown), or notifying another information processing device of the error. Also, for example, the other information processing device may be the control unit of the processing unit 13 (the control unit 400 of the exposure unit 13a), or may be an information processing device (host computer) that remotely controls the processing unit 13.

[0032] This makes it possible to determine whether the processing unit 13 can be operated in the chamber 1 adjusted to the target temperature. If an error is output in step S106 before the processing unit 13 starts operating, the user or the control unit can determine whether to start the operation of the processing unit 13. Also, if an error is output in step S106 while the processing unit 13 is operating, the user or the control unit can determine whether to stop the operation of the processing unit 13.

[0033] As described above, according to the temperature adjustment device of this embodiment, the temperature of the gas cooled by the cooler is controlled to be higher than the dew point temperature, so that the occurrence of condensation or frost can be suppressed. Also, according to the temperature adjustment device of this embodiment, an error is output when the temperature of the gas entering the heater is not within a predetermined range, so that the deterioration of the performance of the processing unit can be suppressed.

[0034] <Third embodiment> Next, a temperature adjustment device 2c according to the third embodiment will be described. Matters not mentioned as the third embodiment may follow the first embodiment. FIG. 6 is a diagram showing a lithography apparatus 1000c including a temperature adjustment device 2c according to this embodiment. The difference from the lithography apparatus 1000a shown in FIG. 1 is that the temperature adjustment device 2c has a temperature sensor 17 (fourth measurement unit) that measures the temperature of the refrigerant f in the cooler 3, and the first control unit 11 acquires the temperature of the refrigerant f measured by the temperature sensor 17. Here, in the example of FIG. 6, the temperature sensor 17 is disposed in the cooler 3, but the position at which the temperature sensor 17 is disposed is not limited thereto. For example, the temperature sensor 17 may be disposed at a position that measures the temperature of the refrigerant f that has cooled the gas d in the cooler 3. That is, the temperature sensor 17 may be disposed at a position downstream from the cooler 3 in the flow of the refrigerant f. Also, for example, the temperature sensor 17 may be disposed at a position that measures the temperature of the refrigerant f before cooling the gas d in the cooler 3. In other words, the temperature sensor 17 may be disposed at a position upstream of the cooler 3 in the flow of the refrigerant f.

[0035] Fig. 7 is a flowchart showing a temperature adjustment method according to this embodiment. Each step of the flowchart in Fig. 7 will be described as being executed by either the first control unit 11 or the second control unit 12, but may be executed by one control unit. Steps S100 and S104 in Fig. 7 are the same as those in Fig. 3, so their description will be omitted.

[0036] In step S110, the first control unit 11 acquires the temperature of the refrigerant f measured by the temperature sensor 17.

[0037] In step S112, the cooler 3 is controlled to cool the gas d to a temperature higher than the dew point temperature of the gas d based on the gas temperature and humidity acquired in step S100 and the temperature of the refrigerant f acquired in step S110. Since the cooler 3 is controlled based on the temperature of the refrigerant f as well as the gas temperature and humidity, the temperature of the gas d can be controlled with higher accuracy.

[0038] As described above, according to the temperature adjustment device of this embodiment, the temperature of the gas cooled by the cooler is controlled to be higher than the dew point temperature based on not only the gas temperature and humidity but also the refrigerant temperature, thereby suppressing the occurrence of condensation or frost.

[0039] <Production method> As an example of an article, a method for manufacturing a device (semiconductor device, magnetic storage medium, liquid crystal display element, etc.), a color filter, or a hard disk will be described. The manufacturing method includes a step of forming a pattern on a substrate (wafer, glass plate, film-like substrate, etc.) by irradiating the substrate with light using a lithography apparatus (e.g., exposure apparatus, etc.) having a temperature adjustment device for adjusting the temperature of a gas supplied to a chamber. The manufacturing method further includes a step (processing step) of processing the substrate on which the pattern is formed. The processing step may include a step of removing a residual film of the pattern. The processing step may also include a step of etching the substrate using the pattern as a mask. The processing step may also include other well-known steps such as dicing, bonding, and packaging. The manufacturing method of the article in this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to the conventional method.

[0040] Next, as an example of a method for manufacturing an article, an embodiment of a device manufacturing method using the above-mentioned exposure apparatus will be described with reference to Figures 8 and 9. Figure 8 is a flow chart for explaining the manufacture of devices (semiconductor chips such as ICs and LSIs, LCDs, CCDs, etc.). Here, a method for manufacturing semiconductor chips will be described as an example.

[0041] In step S1 (circuit design), the circuit of the semiconductor device is designed. In step S2 (mask production), a mask (master) is produced based on the designed circuit pattern. In step S3 (wafer production), a wafer (substrate) is produced using a material such as silicon. Step S4 (wafer process) is called the pre-process, in which the mask and wafer are used to form an actual circuit on the wafer using lithography technology with the exposure device described above. Here, the exposure device forms a circuit pattern on the wafer by illuminating the master on which the circuit pattern is formed and projecting an image of the circuit pattern of the master onto the wafer. Step S5 (assembly) is called the post-process, in which the wafer produced in step S4 is used to make a semiconductor chip, and includes assembly processes such as assembly processes (dicing, bonding) and packaging processes (chip encapsulation). In step S6 (inspection), the semiconductor device produced in step S5 is inspected, such as an operation confirmation test and a durability test. After going through these processes, the semiconductor device is completed and shipped (step S7).

[0042] FIG. 9 is a detailed flowchart of the wafer process in step S4. In step S11 (oxidation), the surface of the wafer is oxidized. In step S12 (CVD), an insulating film is formed on the surface of the wafer. In step S13 (electrode formation), electrodes are formed on the wafer by deposition. In step S14 (ion implantation), ions are implanted into the wafer. In step S15 (resist processing), a photosensitive agent is applied to the wafer. In step S16 (exposure), the circuit pattern of the mask is exposed onto the wafer by an exposure device. In step S17 (development), the exposed wafer is developed. In step S18 (etching), the parts other than the developed resist image are scraped off. In step S19 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

[0043] Although the preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of the gist of the present invention.

[0044] In addition, an exposure apparatus has been described as an example of a lithography apparatus, but the present invention is not limited thereto. An example of a lithography apparatus may be an imprint apparatus that performs a process of forming a pattern of an imprint material on a substrate using a mold (template) having a concave-convex pattern. An example of a lithography apparatus may be a planarization apparatus that performs a process of molding a composition on a substrate so as to flatten it using a mold (flat template) having a flat portion without a concave-convex pattern. An example of a lithography apparatus may be a drawing apparatus that performs a process of drawing on a substrate with a charged particle beam (such as an electron beam or an ion beam) via a charged particle optical system to form a pattern on the substrate.

[0045] <Summary of the embodiment> The disclosure herein includes the following temperature adjustment apparatus, lithography apparatus, and method for manufacturing an article.

[0046] (Item 1) A temperature control device for controlling the temperature of a gas, A cooling unit that cools the gas; A first measuring unit that measures the temperature and humidity of the gas entering the cooling unit; a heating unit that heats the gas cooled by the cooling unit; and a control unit that controls the cooling unit to cool the gas so that the temperature of the gas becomes higher than a dew point temperature based on the temperature and humidity of the gas measured by the first measuring unit, and controls the heating unit to heat the gas so that the temperature of the gas becomes a target temperature.

[0047] (Item 2) The cooling unit has a refrigerator that cools a refrigerant for heat exchange with the gas. 2. The temperature control device according to item 1,

[0048] (Item 3) The cooling unit has a Peltier element that cools the gas. 2. The temperature control device according to item 1,

[0049] (Item 4) A second measurement unit that measures the temperature of the gas heated by the heating unit, The control unit controls the heating unit based on the result of measurement by the second measurement unit. 4. The temperature control device according to any one of items 1 to 3,

[0050] (Item 5) A third measurement unit that measures the temperature of the gas entering the heating unit, The control unit outputs an error when the temperature of the gas measured by the third measurement unit is in a range lower than the target temperature. 5. The temperature control device according to any one of items 1 to 4.

[0051] (Item 6) A third measurement unit that measures the temperature of the gas entering the heating unit, the control unit outputs an error when the output of the heating unit for heating the gas to the target temperature measured by the third measurement unit does not fall within a predetermined range. 5. The temperature control device according to any one of items 1 to 4.

[0052] (Item 7) A fourth measurement unit that measures the temperature of the refrigerant, The control unit controls the cooling unit based on the result of measurement by the fourth measurement unit. 3. The temperature control device according to item 2,

[0053] (Item 8) A temperature adjustment method for adjusting a temperature of a gas, comprising the steps of: a measuring step of measuring the temperature and humidity of the gas; a cooling step of cooling the gas so that the temperature of the gas becomes higher than a dew point temperature based on the temperature and humidity of the gas measured in the measuring step; A heating step of heating the gas so that the temperature of the gas cooled in the cooling step becomes a target temperature. A temperature control method comprising:

[0054] (Item 9) 1. A lithographic apparatus for processing a substrate, comprising: A processing section for forming a pattern on a substrate; and a temperature adjustment device according to item 1, which adjusts the temperature of a gas supplied to a chamber in which the processing unit is disposed. 13. A lithography apparatus comprising:

[0055] (Item 10) The processing section includes an exposure section that exposes a substrate. 10. The lithographic apparatus according to item 9,

[0056] (Item 11) Forming a pattern on a substrate using the lithography apparatus according to item 9; and manufacturing an article from the patterned substrate. A method for producing an article.

Claims

1. A temperature control device for controlling the temperature of a gas, A cooling unit that cools the gas; A first measuring unit that measures the temperature and humidity of the gas entering the cooling unit; a heating unit that heats the gas cooled by the cooling unit; a control unit that controls the cooling unit to cool the gas so that the temperature of the gas becomes higher than a dew point temperature based on the temperature and humidity of the gas measured by the first measuring unit, and controls the heating unit to heat the gas so that the temperature of the gas becomes a target temperature.

2. The cooling unit has a refrigerator that cools a refrigerant for heat exchange with the gas. The temperature adjustment device according to claim 1 .

3. The cooling unit has a Peltier element that cools the gas. The temperature adjustment device according to claim 1 .

4. A second measurement unit that measures the temperature of the gas heated by the heating unit, The control unit controls the heating unit based on the result of measurement by the second measurement unit. The temperature adjustment device according to claim 1 .

5. A third measurement unit that measures the temperature of the gas entering the heating unit, the control unit outputs an error when the temperature of the gas measured by the third measurement unit is in a range lower than the target temperature. The temperature adjustment device according to claim 1 .

6. A third measurement unit that measures the temperature of the gas entering the heating unit, the control unit outputs an error when the output of the heating unit for heating the gas to the target temperature measured by the third measurement unit does not fall within a predetermined range. The temperature adjustment device according to claim 1 .

7. A fourth measurement unit that measures the temperature of the refrigerant, The control unit controls the cooling unit based on the result of measurement by the fourth measurement unit. The temperature adjustment device according to claim 2 .

8. A temperature adjustment method for adjusting a temperature of a gas, comprising the steps of: a measuring step of measuring the temperature and humidity of the gas; a cooling step of cooling the gas so that the temperature of the gas becomes higher than a dew point temperature based on the temperature and humidity of the gas measured in the measuring step; A heating step of heating the gas so that the temperature of the gas cooled in the cooling step becomes a target temperature. A temperature control method comprising:

9. 1. A lithographic apparatus for processing a substrate, comprising: A processing section for forming a pattern on a substrate; The temperature adjustment device according to claim 1 , which adjusts the temperature of a gas supplied to a chamber in which the processing unit is disposed.

13. A lithography apparatus comprising:

10. The processing section includes an exposure section that exposes a substrate. A lithographic apparatus according to claim 9 .

11. forming a pattern on a substrate using a lithographic apparatus according to claim 9; and manufacturing an article from the patterned substrate. A method for producing an article.

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