Light-emitting unit

Abstract

To adjust a film thickness of a liquid raw material accurately.SOLUTION: A light-emitting unit according to one aspect of the present technique comprises a housing, an accommodation portion, a rotating body, a first film thickness adjustment mechanism, and a shielding body. The housing allows an energy beam to pass through. The accommodation portion is arranged inside the housing and can accommodate a liquid raw material. The rotating body is capable of rotating around an axis of rotation in a direction intersecting a gravity direction, and has a first region that is immersed in a liquid raw material accommodated in the accommodation portion, and a second region which is located downstream of the first region in a rotational direction of the rotating body, to which the liquid raw material adheres, and which includes an irradiation position of the energy beam. The first film thickness adjustment mechanism is arranged upstream of the irradiation position, and adjusts a film thickness of the liquid raw material adhered to the second region to a first film thickness. The shielding body is arranged between the first film thickness adjustment mechanism and a liquid level of the raw liquid material accommodated in the accommodation portion, as well as between the second region and the housing, and has a facing surface that opposes the liquid level in a vertical direction.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a light-emitting unit that supplies plasma raw material that generates X-rays, extreme ultraviolet light, and the like. [Background technology]

[0002] Traditionally, X-rays have been used for medical, industrial, and research purposes. In the medical field, X-rays are used for applications such as chest X-ray photography, dental X-ray photography, and CT (Computer Tomogram). In the industrial field, X-rays are used for applications such as non-destructive testing to observe the inside of materials such as structures and welds, and non-destructive tomographic testing. In the research field, X-rays are used for applications such as X-ray diffraction to analyze the crystal structure of materials, and X-ray spectroscopy (X-ray fluorescence analysis) to analyze the constituent elements of materials.

[0003] Extreme ultraviolet light (hereinafter also referred to as "EUV (Extreme Ultra Violet) light") with a wavelength of 13.5 nm, which is in the soft X-ray region with a relatively long wavelength among X-rays, has been used as exposure light in recent years. Here, the base material of a mask for EUV lithography in which a fine pattern is formed is a reflective mirror having a laminated structure in which a multilayer film (e.g., molybdenum and silicon) for reflecting EUV light is provided on a substrate made of low thermal expansion glass. An EUV mask is formed by patterning a material that absorbs radiation with a wavelength of 13.5 nm on the multilayer film.

[0004] In addition, the size of unacceptable defects in EUV masks is significantly smaller than that of conventional ArF masks, making them difficult to detect. Therefore, EUV masks are usually inspected using what is called actinic inspection, which uses radiation with a wavelength that matches the working wavelength of lithography. For example, when inspection is performed using radiation with a wavelength of 13.5 nm, it is possible to detect defects with a resolution smaller than the wavelength.

[0005] Generally, EUV light source devices include a discharge produced plasma (DPP) light source device, a laser assisted discharge produced plasma (LDP) light source device, and a laser produced plasma (LPP) light source device.

[0006] The DPP light source device applies a high voltage between electrodes to which gaseous plasma raw material (discharge gas) containing EUV radiating species is supplied, generating high-density, high-temperature plasma through discharge, and utilizes the extreme ultraviolet light emitted from the plasma.

[0007] An LDP light source device is an improved version of a DPP light source device, and for example, it supplies liquid high-temperature plasma raw material (e.g., Sn (tin) or Li (lithium)) containing EUV radiating species to the surface of an electrode (discharge electrode) that generates a discharge, irradiates the raw material with an energy beam (e.g., an electron beam or laser beam) to vaporize the raw material, and then generates high-temperature plasma by discharge.

[0008] The LPP light source device excites an EUV radiating species with a laser beam, etc., to generate high-temperature plasma. A known light source device of this type is one that generates plasma by exciting a target material for EUV radiation, which is a droplet of tin (Sn) or lithium (Li) ejected in the form of minute droplets, by focusing a laser beam on the target material.

[0009] Patent Document 1 proposes a method of obtaining radiation by supplying a plasma raw material for generating radiation such as X-rays or EUV to a rotor and irradiating the area of ​​the rotor to which the plasma raw material is supplied with an energy beam (laser beam). A cylindrical container with one open end is used as the rotor, and liquid plasma raw material is supplied to this container, and laser light is irradiated onto the inner peripheral surface of the container.

[0010] This method corresponds to the so-called LPP method, but it supplies liquid plasma raw material to the energy beam irradiation area by the centrifugal force of a rotor, and does not require supplying liquid plasma raw material as droplets. Therefore, compared to methods such as focusing a laser beam on droplets, it is possible to obtain high-intensity radiation with a relatively simple configuration. [Prior art documents] [Patent documents]

[0011] [Patent Document 1] JP 2014-216286 A Summary of the Invention [Problem to be solved by the invention]

[0012] In such a light source device, a film thickness adjustment mechanism is provided for the rotating body to adjust the film thickness of the liquid raw material. The amount of liquid raw material scraped off from the rotating body by the film thickness adjustment mechanism depends on (1) the film thickness of the liquid raw material adhering to the rotating body and (2) the rotation speed of the rotating body. As the rotation speed increases, the film thickness increases, and the amount of liquid raw material scraped off by the film thickness adjustment mechanism increases, eventually exceeding the amount that the film thickness adjustment mechanism can hold or discharge. As a result, the film thickness of the liquid raw material cannot be controlled to the desired film thickness, and the intensity of the EUV light becomes unstable.

[0013] In addition, as the rotation speed of the rotor increases, the liquid material begins to splash higher at the part of the rotor immersed in the liquid material that is above the liquid surface, and if this splashing adheres to the rotor, it becomes difficult to adjust the film thickness using only one skimmer.

[0014] In view of the above circumstances, an object of the present invention is to provide a light-emitting unit that makes it possible to adjust the film thickness of a liquid raw material with high precision. [Means for solving the problem]

[0015] In order to achieve the above object, a light-emitting unit according to one embodiment of the present technology is a light-emitting unit that generates radiation by converting a liquid raw material into plasma using irradiation with an energy beam, The device includes a housing, a container, a rotor, a first film thickness adjustment mechanism, and a shield. The housing portion allows the energy beam to pass therethrough. The container is disposed inside the housing and is capable of containing the liquid source. The rotating body is rotatable about a rotation axis in a direction intersecting the direction of gravity, and has a first region immersed in the liquid raw material contained in the container, and a second region downstream of the first region in the rotation direction of the rotating body, to which the liquid raw material adheres, and which includes an irradiation position of the energy beam. The first film thickness adjustment mechanism is disposed at a position upstream of the irradiation position and adjusts the film thickness of the liquid precursor adhered to the second region to a first film thickness. The shield is disposed between the first film thickness adjustment mechanism and the liquid surface of the liquid raw material contained in the container, and between the second region and the housing, and has an opposing surface that faces the liquid surface in the vertical direction.

[0016] In this light-emitting unit, a shield and a first film thickness adjustment mechanism are arranged in this order from the upstream side of the rotation of the rotor, which prevents the liquid source from adhering to the rotor and other parts even at high rotation speeds, and allows the film thickness to be adjusted with precision.

[0017] In addition, in order to achieve the above-mentioned object, the light-emitting unit of the present technology is a light-emitting unit that generates radiation by converting a liquid raw material into plasma using irradiation with an energy beam, and includes a container section, the rotating body, the first film thickness adjustment mechanism, and a second film thickness adjustment mechanism. The container is capable of containing the liquid source. The second film thickness adjustment mechanism is disposed upstream of the first film thickness adjustment mechanism, facing a first surface of the second region that is a surface including the irradiation position, and adjusts the film thickness to a second film thickness that is thicker than the first film thickness.

[0018] In this light-emitting unit, the second film thickness adjustment mechanism and the first film thickness adjustment mechanism are arranged in this order from the upstream side of the rotation of the rotor, whereby the liquid pressure acting on each of the second film thickness adjustment mechanism and the first film thickness adjustment mechanism due to the liquid raw material is reduced, and the film thickness is adjusted with high precision.

[0019] The shield may include a second film thickness adjustment mechanism that is arranged upstream of the first film thickness adjustment mechanism, facing a first surface of the second region that is a surface that includes the irradiation position, and adjusts the film thickness to a second film thickness that is thicker than the first film thickness.

[0020] The light-emitting unit may further include a housing part through which the energy beam can pass. In this case, the container part may be disposed inside the housing part. The second film thickness adjustment mechanism may include a shielding body disposed between the first film thickness adjustment mechanism and the liquid surface of the liquid raw material contained in the container part and between the second region and the housing part, and having an opposing surface facing the liquid surface in the up-down direction.

[0021] The second region may be composed of the first surface, a second surface that is the surface opposite to the first surface, and a side surface of the rotating body.

[0022] The shield and the second film thickness adjustment mechanism may be disposed so as to divide the rotor along the liquid surface when viewed from the direction of the rotation axis.

[0023] The shield and the second film thickness adjustment mechanism may be disposed along the liquid surface at a position upstream of the irradiation position in the rotation direction of the rotor when viewed from the direction of the rotation axis.

[0024] The shield may be disposed opposite the side surface.

[0025] The shield may be disposed opposite the second surface.

[0026] The shield and the second film thickness adjustment mechanism may be configured as one member.

[0027] The shield and the second film thickness adjustment mechanism may have a plate-like shape.

[0028] The shield and the second film thickness adjustment mechanism may be formed of different members. In this case, the second film thickness adjustment mechanism may be disposed downstream of the shield.

[0029] The first film thickness adjustment mechanism may be disposed facing the first surface. In this case, the first film thickness adjustment mechanism may have a protruding portion that protrudes toward the first surface and adjusts the film thickness to a first film thickness, and a holding portion that holds the liquid source attached to the first surface.

[0030] The holding unit may have a discharge port provided opposite to the first surface and configured to discharge the liquid source to the outside of the holding unit.

[0031] The light-emitting unit may further include a housing part through which the energy beam can pass and in which a container part is disposed inside. In this case, the light-emitting unit may further include a first member having an immersion part immersed in the liquid source contained in the container part and an exposure part exposed from the liquid source contained in the container part, and including the first film thickness adjustment mechanism, the second film thickness adjustment mechanism, and a shield disposed between the rotor and the housing part.

[0032] The light-emitting unit may further include a housing part through which the energy beam can pass and in which a container part is disposed inside. In this case, the light-emitting unit may further include a second member exposed from the liquid raw material contained in the container part and including the first film thickness adjustment mechanism, the second film thickness adjustment mechanism, and a shield disposed between the rotor and the housing part.

[0033] The first film thickness adjustment mechanism may have an inclined surface facing the shield.

[0034] The energy beam may be a laser beam.

[0035] The radiation may be extreme ultraviolet light or x-rays.

[0036] The liquid source may be tin, lithium, gadolinium, terbium, gallium, bismuth, indium, or an alloy containing at least one of these materials. Effect of the Invention

[0037] According to the present invention, adhesion of the liquid source to the rotating body and the like is suppressed even at high rotation speeds, and the film thickness is adjusted with precision. In addition, the liquid pressure acting on each of the first film thickness adjustment mechanism and the second film thickness adjustment mechanism due to the liquid source is reduced, and the film thickness is adjusted with precision. Note that the effects described here are not necessarily limited, and may be any of the effects described in the present disclosure. [Brief description of the drawings]

[0038] [Figure 1] 1 is a schematic diagram showing an example of the configuration of a light source device according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic diagram showing a configuration example of a plasma generation mechanism. [Diagram 3] FIG. 2 is a top view of a plasma generation mechanism. [Figure 4] FIG. 2 is a schematic diagram showing a configuration example of a plasma generation mechanism. [Diagram 5] FIG. 2 is a top view of a plasma generation mechanism. [Figure 6] FIG. 2 is a schematic diagram showing a configuration example of a plasma generation mechanism. [Figure 7] FIG. 2 is a schematic diagram showing a configuration example of a plasma generation mechanism. [Figure 8] 8 is a cross-sectional view taken along line AA in FIG. 7. [Figure 9] FIG. 2 is a schematic diagram showing a configuration example of a plasma generation mechanism. [Figure 10] FIG. 2 is a schematic diagram showing a configuration example of a plasma generation mechanism. [Figure 11] 5A and 5B are schematic diagrams showing configuration examples of a block member. [Figure 12] FIG. 2 is a schematic diagram showing a configuration example of a plasma generation mechanism. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0039] Hereinafter, embodiments of the present technology will be described with reference to the drawings.

[0040] <First embodiment> [Basic configuration of light source device] FIG. 1 is a schematic diagram showing an example of the configuration of a light source device according to a first embodiment of the present invention. The light source device 100 is an LPP type light source device. That is, the light source device 100 is a light source device that converts the plasma raw material 1 into plasma by irradiating it with an energy beam EB, and extracts the radiation R. In this disclosure, radiation R includes light (electromagnetic waves) emitted from plasma P, such as light in the soft X-ray region, such as EUV light, and hard X-rays with higher energy.

[0041] When EUV light is emitted as the radiation R, an EUV raw material is used as the plasma raw material 1. As a raw material for emitting EUV light, for example, liquid tin (Sn) or lithium (Li) is used. Sn and Li are solid at room temperature, but when irradiated with the energy beam EB, they are used in a liquid state. When X-rays are emitted as the radiation R, an X-ray raw material is used as the plasma raw material 1. The X-ray raw material is, for example, a metal that is liquid at room temperature, and examples of the X-ray raw material that can be used include gallium (Ga), a gallium alloy, and an Sn compound. The plasma raw material 1 corresponds to one embodiment of the liquid raw material according to the present technology.

[0042] FIG. 1 is a schematic cross-section of light source device 100 taken along the horizontal direction at a position at a predetermined height from the installation surface, viewed from above. In FIG. 1, in order to facilitate understanding of the configuration and operation of the light source device 100, cross-sections of parts for which explanation of the cross-sectional configuration and the like is not required are omitted. In the following description, the X direction may be the left-right direction (the positive side of the X axis is the right side, and the negative side is the left side), the Y direction may be the front-rear direction (the positive side of the Y axis is the front side, and the negative side is the rear side), and the Z direction may be the height direction (the positive side of the Z axis is the upper side, and the negative side is the lower side). Of course, the application of this technology is not limited to the orientation in which the light source device 100 is used.

[0043] The light source device 100 includes a housing 2, a vacuum chamber 3, an energy beam entrance chamber 4, a radiation exit chamber 5, a plasma generation mechanism 6, a control unit 7, and a raw material supply device 30. In addition, in Fig. 1, the raw material supply device 30 is diagrammatically illustrated by a dashed line frame.

[0044] 1, the housing 2 is configured so that its outer shape is roughly cubic. Note that the shape of the housing 2 is not limited to a cubic shape, and any three-dimensional shape may be used. The housing 2 has an emission hole 2a formed in the front surface, an incidence hole 2b formed in the right side surface, a through hole 2c formed in the rear surface, and a through hole 2d formed in the left side surface. The material of the housing 2 is not limited, and for example, a metal housing is used.

[0045] In this embodiment, an emission axis EA of radiation R is set to pass through the emission hole 2a on the front surface and extend in the Y direction (front-rear direction). Radiation R, such as X-rays or EUV light, is extracted along the emission axis EA and emitted forward from the emission hole 2a. In this embodiment, the incidence axis IA of the energy beam EB is set so as to extend obliquely leftward toward the rear side from the incidence hole 2b on the right side surface. 1, a beam source 8 that emits an energy beam EB is provided outside the housing 2. The beam source 8 is provided such that the energy beam EB is incident on the inside of the housing 2 along an incident axis IA. An electron beam or a laser beam can be used as the energy beam EB. The beam source 8 may be configured in any manner that is capable of emitting the energy beam EB.

[0046] The light source device 100 is provided with a chamber section C including a plurality of chambers. Specifically, the chamber section C has a vacuum chamber 3, an energy beam incident chamber (hereinafter simply referred to as an incident chamber) 4, and a radiation exit chamber (hereinafter simply referred to as an exit chamber) 5. The vacuum chamber 3, the incident chamber 4, and the exit chamber 5 are spatially connected to one another. That is, the vacuum chamber 3 and the incident chamber 4 are connected to one another. Similarly, the vacuum chamber 3 and the exit chamber 5 are connected to one another.

[0047] The entrance chamber 4 is formed so as to be located on an entrance axis IA of the energy beam EB, and the exit chamber 5 is formed so as to be located on an exit axis EA of the radiation R. In addition, in the vacuum chamber 3, a mechanism for generating plasma P is provided.

[0048] In this embodiment, the chamber section C (vacuum chamber 3, entrance chamber 4, and exit chamber 5) is constituted by a chamber main body 9, an outer protrusion 9a protruding forward from the front surface of the chamber main body 9, and two inner protrusions 9b and 9c protruding inward from the inner surface of the chamber main body 9. The chamber body 9, the outer protrusion 9a, and the two inner protrusions 9b and 9c that constitute the chamber section C are made of a metal material.

[0049] The chamber main body 9 is configured so that the outer shape is roughly a rectangular parallelepiped, and is disposed so that its front, rear, left and right faces face the front, rear, left and right faces of the housing 2, respectively. Further, the chamber body 9 is disposed so that the right front corner between the front surface and the right side surface is positioned on the incidence axis IA of the energy beam EB.

[0050] 1, an exit hole 9d is formed in the front surface of the chamber body 9. The exit hole 9d is formed at a position aligned with the exit hole 2a in the front surface of the housing 2 on the exit axis EA of the radiation R. An outer protrusion 9a is configured to protrude forward from the periphery of the emission hole 9d of the chamber body 9. The outer protrusion 9a is configured to protrude farther forward than the emission hole 2a of the housing 2 so as to be inscribed in the emission hole 2a of the housing 2. Furthermore, an inner protrusion 9b is configured so as to protrude inward from the periphery of the emission hole 9d on the inner side of the chamber body 9. Note that the configuration of the inner protrusion 9b is not essential, and only the outer protrusion 9a may be provided in the chamber part C. The space surrounded by the outer protrusion 9a and the inner protrusion 9b functions as the emission chamber 5. The outer protrusion 9a and the inner protrusion 9b themselves, which are members constituting the emission chamber 5, can also be called the emission chamber. The outer protrusion 9a and the inner protrusion 9b may be integrally formed with the chamber body 9, or may be formed separately and then connected to the chamber body 9.

[0051] The exit chamber 5 is configured to have a cone shape with the exit axis EA of the radiation R as its central axis. The exit chamber 5 is configured to have a large cross-sectional area at the center in the direction of the exit axis EA of the radiation R, and the cross-sectional area becomes smaller toward the front and rear ends. In other words, the exit chamber 5 has a shape that narrows toward the front and rear ends. In addition, the exit chamber 5 is provided with openings (apertures) at the front and rear ends to pass the radiation R.

[0052] A utilization device such as a mask inspection device is connected to the front end of the emission chamber 5 (the front end of the outer protrusion 9a). In the example shown in FIG. 1, an application chamber 10 is connected as a chamber forming part of the utilization device. The pressure inside the application chamber 10 may be atmospheric pressure. Furthermore, the inside of the application chamber 10 may be purged by introducing a gas (e.g., an inert gas) from a gas injection path as necessary. Furthermore, the gas inside the application chamber 10 may be exhausted by an exhaust means not shown.

[0053] A filter film 11 is provided between the emission chamber 5 and the application chamber 10 to physically separate the region where the plasma P is generated from the application chamber 10. The filter film 11 is configured with a structure that allows radiation to pass through, and prevents the plasma raw material 1 and debris that are scattered as the plasma P is generated from entering the application chamber 10.

[0054] A collector (collecting mirror) 12 is disposed inside the exit chamber 5 for guiding and collecting the radiation R that has entered the exit chamber 5 into a utilization device (inside the application chamber 10). In Fig. 1, the components of the radiation R that enters the exit chamber 5 and is collected are shown by hatching.

[0055] Furthermore, a shielding member (central obscuration) 13 is disposed inside the emission chamber 5. The shielding member 13 is disposed on the emission axis EA of the radiation R so as to be aligned with the emission hole 9d of the chamber body 9, the emission hole 2a of the housing 2, and the filter film 11. In this embodiment, the shielding member 13 can block radiation components that are not collected by the collector 12. Note that the shielding member 13 does not necessarily have to be provided.

[0056] An entrance window 14 is formed in the right front corner of the chamber body 9. The entrance window 14 is formed at a position aligned with the entrance hole 2b on the right side surface of the housing 2 on the entrance axis IA of the energy beam EB. Furthermore, an inner protrusion 9c is configured on the inner side of the right front corner of the chamber body 9 so as to protrude from a position surrounding the entrance window 14 along the direction of the entrance axis IA of the energy beam EB. Of the internal space of chamber body 9, the space surrounded by inner protrusion 9c functions as incident chamber 4. Inner protrusion 9c and the front right corner portion of chamber body 9, which constitute incident chamber 4, can themselves be called the incident chamber. The inner protrusion 9c may be formed integrally with the chamber body 9, or may be formed separately and then connected to the chamber body 9.

[0057] The incidence chamber 4 is configured to have a cone shape with the incidence axis IA of the energy beam EB as its central axis. The incidence chamber 4 is configured so that the cross-sectional area becomes smaller toward the inner end of the chamber body 9 in the direction of the incidence axis IA of the energy beam EB. In other words, the incidence chamber 4 has a shape that narrows toward the inner end. In addition, the incidence chamber 4 is provided with an opening (aperture) at the inner end through which the energy beam EB passes.

[0058] A capture mechanism for capturing the scattered plasma raw material 1 and debris is disposed inside the injection chamber 4. In the example shown in Fig. 1, a rotary window 15, which is a plate-shaped rotating member that transmits the energy beam EB and captures the plasma raw material 1 and debris, is disposed as the capture mechanism. By rotating the rotary window 15, the effective area of ​​the beam transmission region of the rotary window 15 is increased, making it possible to reduce the frequency with which the rotary window 15 needs to be replaced.

[0059] 1, the emission chamber 5 and the incidence chamber 4 are provided with gas injection paths 16a and 16b, respectively, and gas is supplied to the inside of the emission chamber 5 and the incidence chamber 4 from a gas supply device (not shown). The emission chamber 5 is supplied with a gas having a high transmittance for the radiation R. The incidence chamber 4 is supplied with a gas having a high transmittance for the energy beam EB.

[0060] The gases supplied to the emission chamber 5 and the incidence chamber 4 may be the same or different. For example, argon or helium can be used as gases having high transmittance for both the energy beam EB and the radiation R. Besides, the type of gas supplied to the emission chamber 5 and the incidence chamber 4 is not limited. By supplying gas, the internal pressure of the emission chamber 5 and the incidence chamber 4 can be set to a pressure higher than the internal pressure of the vacuum chamber 3, making it possible to suppress the intrusion of debris and the like.

[0061] Of the internal space of the chamber body 9, the space excluding the internal space of the inner protrusion 9b functioning as the emission chamber 5 and the internal space of the inner protrusion 9c functioning as the incidence chamber 4 functions as the vacuum chamber 3. The part that constitutes the vacuum chamber 3 itself can also be called the vacuum chamber.

[0062] 1, the chamber body 9 has a portion that protrudes from the housing 2 to the outside through a through hole 2d on the left side surface of the housing 2, and its tip is connected to an exhaust pump 17. The specific configuration of the exhaust pump 17 is not limited, and any pump such as a vacuum pump may be used. The vacuum chamber 3 is evacuated by the exhaust pump 17, and the pressure in the vacuum chamber 3 is reduced. This suppresses the attenuation of the radiation R generated in the vacuum chamber 3. The inside of the vacuum chamber 3 does not necessarily have to be a vacuum atmosphere as long as it is a reduced pressure atmosphere relative to the entrance chamber 4 and the exit chamber 5. Also, an inert gas may be supplied into the vacuum chamber 3.

[0063] In this embodiment, a gas nozzle 18 is installed so as to extend in the left-right direction toward the region between the entrance axis IA and the exit axis EA. The gas nozzle 18 is installed on the right side surface of the chamber body 9 via a seal member or the like. The gas nozzle 18 is connected to a gas supply device (not shown) and supplies gas into the chamber body 9. Note that the configuration of the gas nozzle 18 is not essential, and gas may be supplied without passing through a gas nozzle. 1, gas is sprayed from the gas nozzle 18 from the right side of the region between the entrance axis IA and the exit axis EA to the left along the left-right direction. This makes it possible to move debris emitted from the plasma P in a direction away from the entrance axis IA and the exit axis EA.

[0064] The plasma generation mechanism 6 is a mechanism for generating plasma P in the vacuum chamber 3 and emitting radiation R (X-rays, EUV light). The plasma generation mechanism 6 includes a disk-shaped rotor 20 for supplying raw material, and a raw material container 21 for accommodating the liquid plasma raw material 1. The rotor 20 and the raw material container 21 are disposed inside the vacuum chamber 3. The plasma generation mechanism 6 corresponds to one embodiment of a light-emitting unit according to the present technology that converts the plasma raw material 1 into plasma by irradiation with the energy beam EB, thereby generating radiation.

[0065] 1, an energy beam EB is incident on a disk-shaped rotating body 20. The rotating body 20 is disposed in a vacuum chamber 3 such that an irradiation position I of the energy beam EB is located at the intersection of an entrance axis IA and an exit axis EA. Note that the shape of the rotating body is not limited to a disk shape, and for example, a polygonal rotating body may be used.

[0066] The raw material container 21 is provided so that the rotor 20 is immersed therein, and supplies liquid plasma raw material 1 to the rotor 20. For example, the rotor 20 is held rotatably while immersed in the liquid plasma raw material 1 in the raw material container 21, and the plasma raw material 1 adheres to the surface of the rotor 20. As the rotor 20 rotates in this state, the plasma raw material 1 is supplied to the irradiation position I of the rotor 20. Then, an energy beam EB is incident on the irradiation position I of the rotor 20, and a plasma P is generated.

[0067] In this way, raw material container 21 is provided in vacuum chamber 3, stores liquid plasma raw material 1, and supplies liquid plasma raw material 1 to irradiation position I of energy beam EB. Raw material container 21 corresponds to one embodiment of a storage unit capable of storing liquid raw material according to the present technology. Other configurations of plasma generation mechanism 6 will be described in detail later.

[0068] The control unit 7 controls the operation of each of the components of the light source device 100 . For example, the control unit 7 controls the operations of the beam source 8 and the exhaust pump 17. The control unit 7 also controls the operations of various motors, the raw material supply device 30, and the like, which will be described later. The control unit 7 has hardware circuits necessary for a computer, such as a CPU, memory (RAM, ROM), etc. The CPU loads a control program stored in the memory into the RAM and executes it, thereby performing various processes. The control unit 7 may be implemented by a programmable logic device (PLD) such as a field programmable gate array (FPGA) or other device such as an application specific integrated circuit (ASIC). In FIG. 1, the control unit 7 is illustrated diagrammatically as a functional block, but the position where the control unit 7 is constructed may be designed arbitrarily.

[0069] 1, in this embodiment, a radiological diagnostic section 19 is configured in a region on the front side of the chamber body 9 that is spatially connected to the vacuum chamber 3. The radiological diagnostic section 19 is configured at a position where radiation R, which is emitted in a direction different from the emission axis EA of the radiation R, is incident. The radiation diagnostic unit 19 measures the state of radiation R from the plasma P. Here, the state of radiation R refers to the physical state of radiation R, such as the intensity, wavelength, and spectrum of radiation R. For example, the radiation diagnostic unit 19 is configured by a detector that detects the presence or absence of radiation R and a measuring device that measures the output of radiation. The measurement results obtained by the radiation diagnostic section 19 are used for diagnosis of radiation R and for controlling the operation of the raw material supply device 30, which will be described below.

[0070] The raw material supply device 30 supplies the plasma raw material 1 into the raw material container 21. The specific configuration of the raw material supply device 30 and the timing of supplying the plasma raw material 1 by the raw material supply device 30 are not limited.

[0071] [Plasma generation mechanism] FIG. 2 is a schematic diagram showing an example of the configuration of the plasma generation mechanism 6. As shown in FIG. FIG. 3 is a top view of the plasma generation mechanism 6. As shown in FIG. Fig. 2 shows the plasma generation mechanism 6 as viewed from above (positive side in the Y direction) in Fig. 1. It also shows a state in which an energy beam EB is emitted by the beam source 8. Fig. 3 shows the plasma generation mechanism 6 as viewed from the front side in Fig. 1 and from above (positive side in the Z direction) in Fig. 2.

[0072] The plasma generation mechanism 6 has a rotor 20, a raw material container 21, a cover structure 40, and skimmers 22a and 22b. Note that the raw material container 21 is illustrated by a dashed line in Figures 2 and 3.

[0073] The rotor 20 has a disk portion 44 and a shaft portion 45. The disk portion 44 is disk-shaped and has a front surface 41, a back surface 42, and a side surface 39. The front surface 41 is the front surface in FIG. 2 and the lower surface in FIG. 3. The back surface 42 is the rear surface in FIG. 2 and the upper surface in FIG. 3. The side surface 39 is the left and right surfaces in FIG. 2 and FIG. 3. In FIG. 2, a part of the lower side of the rotor 20 is immersed in the plasma raw material 1 contained in the raw material container 21. Therefore, a part of the lower side of the rotor's surface 41 is an area immersed in the plasma raw material 1. Hereinafter, this area will be referred to as an immersion area 43. For example, if the raw material container 21 contains a large amount of plasma raw material 1, most of the rotor's surface 41 will be immersed, and the area of ​​the immersion area 43 will be large. Depending on the size and shape of the rotor 20 and the raw material container 21, the shape of the immersion area 43 can be various. The immersion region 43 corresponds to one embodiment of the first region according to the present technology. Similarly, a part of the lower side of the back surface 42 and a part of the lower side of the side surface 39 also become the immersed region 43 .

[0074] The shaft portion 45 has an elongated cylindrical shape, and is disposed so that its circular surface abuts against the center of the back surface 42 of the rotating body 20. In this embodiment, the rotating body 20 is configured to be rotatable about a predetermined rotation axis. Specifically, the rotating body 20 rotates about a rotation axis H that is parallel to the Y direction. In Fig. 3, the rotation axis H is indicated by a dashed line.

[0075] The shaft portion 45 is disposed so as to extend along the rotation axis H. That is, the shaft portion 45 is disposed parallel to the Y direction. Therefore, the disk portion 44 and the shaft portion 45 rotate integrally with the rotation axis H as the central axis. As shown in FIG. 2, in this example, the direction of rotation is counterclockwise when viewed from the positive side of the Y direction, but the direction of rotation may be clockwise.

[0076] In this embodiment, the direction of the rotation axis H is a direction intersecting the direction of gravity. Specifically, the direction of the rotation axis H is the Y direction, which is a direction intersecting the direction of gravity (Z direction). This is not limited to this, and for example, a direction inclined obliquely with respect to the direction of gravity is also included in the direction intersecting the direction of gravity. Therefore, not only the case where the rotating body 20 rotates while being arranged parallel to the XZ plane as in this example, but also the case where the rotating body rotates while being arranged obliquely with respect to the XZ plane are included in the scope of the present technology. In addition, the direction of the rotation axis H may be any direction intersecting the direction of gravity.

[0077] The portion of surface 41 of rotor 20 above immersion region 43 becomes the region where plasma raw material 1 adheres. Specifically, the rotation of rotor 20 lifts up plasma raw material 1, and plasma raw material 1 is supported by the region of surface 41 that is not immersed in plasma raw material 1. Hereinafter, this region will be referred to as adhesion region 46. In FIG. 2, the portion where plasma raw material 1 adheres is shown diagrammatically in dark and light gray. In this way, adhesion region 46 becomes a ring-shaped region of surface 41 above immersion region 43. It can also be said that adhesion region 46 is a carrier that supports plasma raw material 1. Adhesive region 46 represents one embodiment of the second region of the present technology.

[0078] Similarly, the upper side of the back surface 42 and the upper side of the side surface 39 also become the attachment region 46. Therefore, the attachment region 46 is made up of the front surface 41, the back surface 42 which is the surface opposite to the front surface 41, and the side surface 39. Surface 41 represents one embodiment of a first aspect of the present technology. The back surface 42 corresponds to one embodiment of the second surface according to the present technology.

[0079] The cover structure 40 is disk-shaped and has disk portions 47 and 48 and a side portion 49. The disk portions 47 and 48 are circular flat plates and are arranged parallel to the XZ plane with their centers positioned on the rotation axis H. The disk portion 47 is arranged on the near side in FIG. 2, and the disk portion 48 is arranged on the far side, so that they face each other. Note that in FIG. 2, the disk portion 47 on the near side is omitted, and the illustration is made so that the internal mechanism of the cover structure 40 can be seen. The side portion 49 has a ring shape when viewed from the near side in FIG. 2, and is formed between the disk portions 47 and 48.

[0080] The cover structure 40 also has an internal space S surrounded by the disk portions 47 and 48 and the side portion 49. That is, the internal space S is also a disk-shaped space. In this embodiment, the rotating body 20 is rotatably arranged in the internal space S. Specifically, as shown in FIG. 2, the rotating body 20 is housed so that the circular disk portion 44 appears to be surrounded by the larger circular cover structure 40.

[0081] This allows the rotating body 20 to rotate smoothly in the internal space S. For example, depending on the shape of the cover structure 40, the rotating body 20 may hit the disk portions 47 and 48 or the side portion 49 of the cover structure 40 during rotation, which may impede the rotation. In this example, the shapes of the cover structure 40 and the internal space S are appropriately designed, so that such inhibition of rotation does not occur. The specific shapes of the cover structure 40 and the internal space S are not limited, and any shape capable of rotatably housing the rotating body 20 may be adopted.

[0082] The internal space S also contains a raw material container 21. For example, the raw material container 21 is placed in the lower part of the internal space S, and the lower part of the rotor 20 is immersed in the plasma raw material 1 contained in the raw material container 21. The raw material container 21 may be contained in any position that does not impede the rotation of the rotor 20.

[0083] An opening (not shown) is provided in the front disk portion 47. The energy beam EB emitted from the beam source 8 enters the internal space S from the opening and is irradiated onto the surface 41 of the disk portion 44. In Figures 2 and 3, a portion of the optical path of the energy beam EB up to the surface 41 is diagrammatically shown. Also, an irradiation position I is diagrammatically shown. Alternatively, for example, an opening may be provided in the side portion 49, and the energy beam EB may enter the internal space S from the side. Also, the specific shape and size of the opening are not limited.

[0084] 2, the energy beam EB is irradiated at the 9 o'clock position of the surface 41. In this embodiment, the positions of the opening and the beam source 8 are appropriately adjusted so that the irradiation position I is located on the adhesion region 46 of the surface 41. In other words, for example, the energy beam EB is not irradiated onto the immersion region 43. In this manner, the adhesion region 46 is a region that includes the irradiation position I.

[0085] The specific position of the irradiation position I is not limited, and the energy beam EB may be irradiated to any position on the attachment region 46 within a range in which the present technology can be realized. In addition, although the irradiation position I is illustrated in Fig. 2 and the like as a schematic dot, the energy beam EB may be irradiated over a wide range on the attachment region 46, and the irradiation position I may become a wide-range irradiation surface.

[0086] Irradiation with the energy beam EB generates plasma P at irradiation position I, and radiation R is emitted. Although the intensity of the radiation R varies depending on the radiation angle, it is emitted in all directions on the front side of Fig. 2. The radiation R is extracted, for example, from an opening (which may be the same as or different from the opening through which the energy beam EB enters) provided in the disk portion 47 on the front side of the cover structure 40, and is then used by a utilization device.

[0087] A circular through-hole 51 is provided in the disk portion 48 on the back side. The through-hole 51 is provided in the center of the disk portion 48. As shown in Fig. 3, the shaft portion 45 of the rotating body 20 passes through the through-hole 51, and the upper end portion is exposed from the cover structure 40. The upper end portion is connected to a motor or the like, and the control unit 7 controls the driving of the motor or the like to realize the rotation of the rotating body 20.

[0088] The position and shape of the through-hole 51 are not limited, and any configuration may be adopted that can realize the rotation of the rotor 20. In addition, for example, a mechanism such as a mechanical seal may be appropriately provided between the shaft portion 45 and the through-hole 51. This makes it possible to smoothly rotate the rotor 20 while maintaining the air pressure in the internal space S. The cover structure 40 corresponds to an embodiment of a housing portion according to the present technology through which the energy beam EB can pass.

[0089] [Skimmer] Skimmer 22a is disposed at a position upstream of irradiation position I in the rotation direction of rotor 20. In this embodiment, the boundary between upstream and downstream in the rotation is defined as the 6 o'clock position. Since the rotation direction of rotor 20 is counterclockwise, the upstream side of irradiation position I (9 o'clock position) is the 9 o'clock to 12 o'clock (0 o'clock) and 0 o'clock to 6 o'clock positions, and the downstream side is the 6 o'clock to 9 o'clock positions.

[0090] 2, skimmer 22a is disposed between 1 o'clock and 2 o'clock on surface 41 of disk portion 44. Therefore, skimmer 22a is disposed upstream of irradiation position I. Skimmer 22a may be disposed at any other position upstream of irradiation position I, such as the 3 o'clock position. Similarly, attachment region 46 can be said to be downstream of immersion region 43.

[0091] The skimmer 22a has, for example, a rod shape, and is disposed at a predetermined interval from the surface 41 of the disk portion 44. By appropriately setting this interval, it is possible to adjust the film thickness of the plasma raw material 1 after passing through the skimmer 22a to a desired value. The skimmer 22a is fixed, for example, to the cover structure 40. The skimmer 22a may be fixed via an elastic body such as a spring. Also, a protrusion may be formed on the surface facing the surface 41 of the disk portion 44. There are no other limitations on the specific shape of the skimmer 22a. The skimmer 22a corresponds to an embodiment of a first film thickness adjusting mechanism according to the present technology.

[0092] The skimmer 22b has a plate-like shape. Specifically, as shown in Fig. 3, the skimmer 22b has an upper surface 35 shaped like a rectangular frame with one side removed. The skimmer 22b has a lower surface 36 of the same shape on the opposite side (the back side of Fig. 3), and is disposed so that the upper surface 35 and the lower surface 36 are parallel to the XY plane. The skimmer 22b is fixed to the cover structure 40, for example.

[0093] Skimmer 22b is disposed below skimmer 22a, between skimmer 22a and the liquid surface of plasma raw material 1. Specifically, as shown in FIG. 2, skimmer 22b is disposed so that, from the top, it is skimmer 22a, skimmer 22b, and the liquid surface. In other words, it can be said that skimmer 22b is disposed upstream of skimmer 22a. Skimmer 22b is disposed between attachment region 46 and cover structure 40. Specifically, as shown in FIG. 3, skimmer 22b is disposed between disk portion 44 and cover structure 40 (disk portion 47 and side portion 49).

[0094] Moreover, skimmer 22b is disposed facing surface 41 of disk portion 44. Specifically, skimmer 22b is disposed at a predetermined distance from surface 41. By appropriately designing this distance, it is possible to adjust the film thickness of plasma raw material 1 after passing through skimmer 22b to a desired value. Similarly, skimmer 22b is disposed facing side surface 39 of the disk portion.

[0095] Skimmer 22b also has a surface that faces the liquid surface of plasma raw material 1 in the vertical direction. Specifically, the lower surface 36 shown in FIG.

[0096] Skimmer 22b is also positioned so as to divide rotor 20 along the liquid surface of the plasma raw material 1 when viewed from the direction of rotation axis H. Specifically, Fig. 2 corresponds to the state of plasma generation mechanism 6 when viewed from the direction of rotation axis H (Y direction), and skimmer 22b extending in the horizontal direction (X direction) makes rotor 20 appear to be divided into upper and lower halves.

[0097] The specific shape of the skimmer 22b is not limited. For example, the skimmer 22b may have a shape other than a plate shape, such as a rod shape. A protrusion may be formed on the surface of the disk portion 44 facing the surface 41. Furthermore, the specific arrangement of the skimmer 22b is not limited, and any arrangement may be adopted within the scope of the present technology, such as an arrangement in which the upper surface 35 and the lower surface 36 are inclined with respect to the XY plane. The skimmer 22b corresponds to an embodiment of the shield and the second film thickness adjustment mechanism according to the present technology.

[0098] The rotor 20, raw material container 21, cover structure 40, and skimmers 22a and 22b are made of a rigid material such as metal. Alternatively, a material with low reactivity with the plasma raw material 1, the energy beam EB, and the radiation R may be used as appropriate to prevent deterioration due to reaction with these. Other specific configurations are not limited.

[0099] [Film thickness adjustment] In Figure 2, the areas of plasma raw material 1 where the film thickness is A are shown in light gray, the areas where the film thickness is B are shown in medium gray, and the areas where the film thickness is C are shown in dark gray.

[0100] As shown in Fig. 2, the film thickness of the area of ​​surface 41 of disk part 44 that has just emerged from the liquid surface of the plasma raw material 1 is C. Film thickness C can take various values ​​depending on factors such as the rotation speed of rotor 20. For example, when the rotation speed is fast, a lot of plasma raw material 1 is lifted up by disk part 44, so film thickness C tends to be relatively thick. On the other hand, when the rotation speed is slow, film thickness C tends to be relatively thin.

[0101] In this embodiment, the skimmer 22b adjusts the film thickness of the plasma raw material 1 to a predetermined value B. Specifically, the skimmer 22b is positioned so that the distance between the skimmer 22b and the surface 41 of the disk portion 44 is equal to the film thickness B. As a result, if the film thickness C before passing through the skimmer 22b is greater than the distance between the skimmer 22b and the surface 41, the plasma raw material 1 that cannot pass between the skimmer 22b and the surface 41 is scraped off by the skimmer 22b, and the plasma raw material 1 after passing is attached to the surface 41 at the film thickness B.

[0102] Furthermore, the skimmer 22a adjusts the film thickness to a predetermined value A. Specifically, the skimmer 22a is positioned so that the distance between the skimmer 22a and the surface 41 is equal to the film thickness A. In this embodiment, the film thickness B is greater than the film thickness A. That is, the plasma raw material 1 that cannot pass between the skimmer 22a and the surface 41 is scraped off by the skimmer 22a, and after passing through, the plasma raw material 1 is attached to the surface 41 with the film thickness A.

[0103] In this embodiment, the film thickness is C at the portion just emerging from the liquid surface, but the film thickness is adjusted to B by skimmer 22b, and then to A by skimmer 22a, so that the film thickness is adjusted in two stages. The film thickness A after adjustment may be any value, and is set, for example, taking into consideration the intensity of the energy beam EB and the intensity of the required radiation R. Similarly, the film thickness B may be any value larger than the film thickness A. For example, an intermediate value between the film thickness A and the expected film thickness C is set as the film thickness B. The film thickness A corresponds to an embodiment of the first film thickness according to the present technology. The thickness B corresponds to an embodiment of the second thickness which is thicker than the first thickness according to the present technology.

[0104] [Shielding against splashes] As the disk part 44 rotates, splashing occurs on the liquid surface of the plasma raw material 1. Splashing occurs most noticeably where the disk part 44 exits the plasma raw material 1, i.e., on the right side of Fig. 2, and when the rotation speed is fast, more plasma raw material 1 splashes faster. In this embodiment, splashing is blocked by the skimmer 22b.

[0105] The plasma raw material 1 is scattered mainly upward from the liquid surface. Here, because skimmer 22b has a bottom surface 36 facing the liquid surface, the scattered plasma raw material 1 collides with bottom surface 36. The colliding plasma raw material 1 either adheres to bottom surface 36 or falls to the bottom and returns to raw material container 21, but in either case it does not scatter above skimmer 22b. In this way, skimmer 22b blocks the liquid splash so that the effect of the liquid splash does not extend above skimmer 22b.

[0106] In this embodiment, the member (shielding body) having the function of shielding against splashes and the member (second film thickness adjustment mechanism) having the function of adjusting the film thickness are configured by one member (skimmer 22b). Specifically, the lower surface 36 of skimmer 22b functions as a shielding body, and the surface facing the surface 41 of disk portion 44 of rotor 20 functions as the second film thickness adjustment mechanism.

[0107] [Film thickness adjustment mechanism + film thickness adjustment mechanism embodiment] In the example shown in Fig. 2, the skimmer 22a has the function of a film thickness adjustment mechanism, and the skimmer 22b has the function of a film thickness adjustment mechanism and a shield. That is, as a whole, it has the function of a two-stage film thickness adjustment mechanism and a shield. This is not limited to this, and the skimmer 22b may not have the function of a shield and may only have the function of a film thickness adjustment mechanism. That is, as a whole, it may not have the function of a shield and may only have the function of a two-stage film thickness adjustment mechanism. In this case, the skimmer 22a corresponds to an embodiment of the first film thickness adjusting mechanism according to the present technology. The skimmer 22b corresponds to an embodiment of a second film thickness adjusting mechanism according to the present technology.

[0108] [Thickness adjustment mechanism + shielding embodiment] The skimmer 22b may have only the function of a shield without having the function of a film thickness adjusting mechanism, that is, it may have only one film thickness adjusting mechanism and the function of a shield as a whole. In this case, the skimmer 22a corresponds to an embodiment of the first film thickness adjusting mechanism according to the present technology. Moreover, the skimmer 22b corresponds to one embodiment of a shield according to the present technology.

[0109] As described above, in the plasma generation mechanism 6 according to this embodiment, the skimmers 22b and 22a are arranged in this order from the upstream side of the rotation of the rotor 20. This reduces the liquid pressure of the plasma raw material 1 acting on each of the skimmers 22b and 22a, and allows the film thickness to be adjusted with precision.

[0110] The rotating body is slightly eccentric. Also, there may be variations in thickness depending on the location. Therefore, in order to keep the thickness of the liquid raw material applied to the rotating body constant, the skimmer is supported by an elastic body and moves slightly to follow these variations. However, as the rotation speed of the rotating body increases, the amount of liquid raw material adhering to the rotating body increases. Then, the amount of liquid raw material removed by the skimmer during film thickness adjustment increases, and the skimmer is subjected to large liquid pressure. If the liquid pressure exceeds the elastic force of the elastic body supporting the skimmer, it becomes difficult to obtain the desired film thickness.

[0111] In this embodiment, the film thickness is adjusted in two stages by the two skimmers 22a and 22b, so the amount of liquid raw material removed by each skimmer is smaller than when the film thickness is adjusted by one skimmer. Therefore, the liquid pressure received by each skimmer is also smaller. As a result, stacking of the skimmers is less likely to occur even at high rotation speeds, and the film thickness is adjusted with precision.

[0112] In addition, in the plasma generation mechanism 6 according to this embodiment, the skimmer 22b has a function of blocking liquid splashes. This prevents the liquid raw material from adhering to the rotating body even at high rotation speeds, and allows the film thickness to be adjusted with precision.

[0113] As the rotation speed of the rotor increases, the liquid raw material begins to splash higher from the part of the rotor that is above the liquid surface. If this splashed liquid raw material adheres to the rotor, the film thickness at that part will vary significantly, making it difficult to adjust the film thickness. In addition, if the splashed liquid raw material adheres to undesirable parts of the plasma generation mechanism, it can lead to internal contamination.

[0114] In this embodiment, the skimmer 22b blocks splashing, so splashing of the liquid onto the part of the rotor 20 above the skimmer 22b is suppressed. In addition, the plasma raw material 1 scraped off by the upper skimmer 22a is received by the skimmer 22b, so splashing is less likely to occur than if the plasma raw material 1 were to fall directly into the liquid. This suppresses fluctuations in film thickness, allowing the film thickness to be adjusted with precision. Contamination of the various mechanisms of the plasma generation mechanism 6 is also suppressed.

[0115] In this embodiment, the skimmer 22b is positioned so as to divide the rotor 20 when viewed from the direction of the rotation axis H. This allows the skimmer 22b to be stably positioned. It also makes it possible to block liquid splashes at the portion where the rotor 20 enters the plasma raw material 1 (the left side of FIG. 2).

[0116] In this embodiment, the skimmer 22b is disposed facing the side surface 39 of the rotor 20. This also blocks liquid splashing near the side surface 39, making it possible to further suppress contamination of the plasma generation mechanism 6. Note that the skimmer 22b may not face the side surface 39, but may face only the surface 41. In this case, it is possible to realize the plasma generation mechanism 6 with a simple configuration.

[0117] In this embodiment, the skimmer 22b is configured to have a plate-like shape, which further suppresses contamination of the plasma generation mechanism 6 and allows the film thickness to be adjusted with high precision.

[0118] In this embodiment, the shield and the second film thickness adjustment mechanism are formed from one member, which makes it possible to realize the plasma generation mechanism 6 with a simple structure.

[0119] <Second embodiment> A more detailed embodiment of the plasma generation mechanism 6 according to the present technology will be described as the second embodiment. In the following description, the description of the same configuration and action in the plasma generation mechanism 6 as those described in the above embodiment will be omitted or simplified.

[0120] [Lower skimmer variations] FIG. 4 is a schematic diagram showing a configuration example of the plasma generating mechanism 6. As shown in FIG. FIG. 5 is a top view of the plasma generation mechanism 6. As shown in FIG. The configuration of this example is almost the same as that of Fig. 2, but the shape of the skimmer 22b is different. In this example, the upper surface 35 and the lower surface 36 of the skimmer 22b are L-shaped. The skimmer 22b is disposed so as to face only the right half of the surface 41 of the disk portion 44 and only the right side surface 39. That is, the skimmer 22b of this example has the shape of the right half of the skimmer 22b of Fig. 2 when cut in the center, and does not have a portion facing the left half of the surface 41 of the disk portion 44 or the left side surface 39.

[0121] Skimmer 22b is disposed along the liquid surface at a position upstream of irradiation position I in the rotation direction of rotor 20 when viewed from the direction of rotation axis H. Specifically, irradiation position I is in the 9 o'clock direction, and skimmer 22b is disposed approximately between the 4 o'clock position and the 6 o'clock position. On the other hand, skimmer 22b is not disposed at a position downstream of irradiation position I (the lower left, 6 o'clock to 9 o'clock positions in FIG. 2).

[0122] There is no need to adjust the film thickness downstream of the irradiation position I, and splashing is relatively unlikely to occur from the liquid surface on the left side. Therefore, even if the left half of the skimmer 22b in Fig. 2 is omitted, there is no significant effect on the operation of the plasma generation mechanism 6. By configuring the skimmer 22b with only the right half as in this example, it is possible to realize the plasma generation mechanism 6 with a simple configuration.

[0123] FIG. 6 is a schematic diagram showing a configuration example of the plasma generating mechanism 6. As shown in FIG. In this example, the skimmer 22b does not have a function of a shield, but only has a function of a film thickness adjustment mechanism. Instead, a cover member 60 having a function of a shield is provided. The shape of the cover member 60 is not limited, and it is configured to have a shape that can shield the liquid splash with the lower surface, for example.

[0124] The shield and the second film thickness adjustment mechanism are composed of different members, and the second film thickness adjustment mechanism is disposed above the shield. In other words, it can be said that the second film thickness adjustment mechanism is disposed downstream of the shield. Specifically, the cover member 60 corresponds to the shield, and the skimmer 22b corresponds to the second film thickness adjustment mechanism. As shown in FIG. 6, the skimmer 22b is disposed above the cover member 60.

[0125] Depending on the arrangement of other mechanisms in the plasma generation mechanism 6, it may be advantageous to separate the cover member 60 from the skimmer 22b. Also, by arranging the skimmer 22b above the cover member 60, it becomes possible to adjust the film thickness after first preventing liquid splashing with the cover member 60, so that the film thickness can be adjusted with even greater precision.

[0126] In addition, when the cover member 60 and the skimmer 22b are separate, a configuration in which only the cover member 60 spans from left to right, a configuration in which only the skimmer 22b spans from left to right, or a configuration in which both the cover member 60 and the skimmer 22b span from left to right may be adopted.

[0127] <Third embodiment> [Upper skimmer variations] FIG. 7 is a schematic diagram showing a configuration example of the plasma generation mechanism 6. As shown in FIG. Fig. 8 is a cross-sectional view taken along the line AA in Fig. 7. Fig. 8 shows the cross-section taken along the line AA in Fig. 7 as viewed from the left side (the positive side in the X direction).

[0128] The configuration of this example is almost the same as that of FIG. 2, but the shape of the skimmer 22a is different. In this example, the skimmer 22a is composed of a buffer 64 and an edge 65. The buffer 64 has a rectangular plate shape. As shown in FIG. 7, the buffer 64 has a rectangular surface consisting of a lower side parallel to the X direction, a right side parallel to the Z direction, a left side parallel to the approximately 1 o'clock direction, and an upper side parallel to the approximately 10 o'clock direction, and is connected to the cover structure 40 so that the surface is parallel to the XZ direction. Of course, the specific shape and connection form of the buffer 64 are not limited.

[0129] The edge 65 is a protrusion formed on the inner surface (negative surface in the Y direction) of the buffer 64, and protrudes toward the surface 41 of the disk portion 44. That is, the edge 65 protrudes toward the negative side in the Y direction (the far side in FIG. 7). In FIG. 7, the edge 65 is diagrammatically illustrated by a dashed line. In this manner, the skimmer 22a (the buffer 64 and the edge 65) is disposed facing the surface 41 as a whole.

[0130] In this embodiment, the plasma raw material 1 attached to the surface 41 is held by the buffer 64. The film thickness is adjusted by the edge 65. In FIG. 8, the plasma raw material 1 attached to the surface 41 of the disk part 44 at a predetermined film thickness is shown in gray as a schematic. As the disk part 44 rotates, the plasma raw material 1 attached to the surface 41 moves toward the upper side of FIG. 8. That is, the plasma raw material 1 first enters between the surface 41 and the buffer 64 from the lower side. Eventually, the plasma raw material 1 reaches the position of the edge 65, and the plasma raw material 1 that cannot pass between the surface 41 and the edge 65 is scraped off by the edge 65. On the other hand, the plasma raw material 1 that passes between the surface 41 and the edge 65 moves above the edge 65 while adhering to the surface 41 at a predetermined film thickness (arrow in FIG. 8). In this way, the film thickness is adjusted only by the edge 65, not by the entire skimmer 22a. This makes it possible to adjust the film thickness with even greater precision.

[0131] The plasma raw material 1 scraped off by edge 65 is discharged mainly to the right of skimmer 22a, as shown in FIG. 7. In this example, edge 65 is configured to have a downward incline on the left side. If the plasma raw material 1 is discharged to the left, the discharged plasma raw material 1 may return to the adjusted film thickness due to the centrifugal force of rotation, causing the film thickness to fluctuate. With a configuration such as this example, it becomes difficult for the plasma raw material 1 to be discharged to the left, making it possible to suppress the effect on the film thickness. Of course, the specific shape of edge 65 is not limited.

[0132] Furthermore, a portion of the plasma raw material 1 scraped off by edge 65 is not discharged from skimmer 22a, but is retained between surface 41 and buffer 64. In other words, a certain amount of plasma raw material 1 remains accumulated in buffer 64.

[0133] If the film thickness before passing edge 65 is greater than the distance between surface 41 and edge 65, the film thickness is adjusted and decreased. On the other hand, there may be cases where the film thickness before passing edge 65 is already smaller than the distance between surface 41 and edge 65, and the film thickness is not adjusted. In other words, in such cases, the film thickness after adjustment will be smaller than the desired film thickness. In this example, since buffer 64 is provided, even in such cases, plasma raw material 1 accumulated in buffer 64 flows into the gap between surface 41 and edge 65, and the film thickness is adjusted in the direction of increasing.

[0134] That is, if the buffer 64 is not provided, the film thickness can only be adjusted to decrease, whereas if the buffer 64 is provided, it is also possible to adjust the film thickness to increase. This makes it possible to adjust the film thickness to the desired thickness even if there are areas with a small film thickness or areas where no plasma raw material 1 is applied at all. The buffer 64 corresponds to an embodiment of a holding unit according to the present technology. The edge 65 corresponds to one embodiment of a protrusion according to the present technology.

[0135] FIG. 9 is a schematic diagram showing a configuration example of the plasma generation mechanism 6. As shown in FIG. In this example, an exhaust port is configured in the buffer 64 in Fig. 7. In Fig. 9, the exhaust port 68 is diagrammatically shown by a white circle. The buffer 64 is provided opposite the surface 41, and the plasma raw material 1 is exhausted from the exhaust port.

[0136] In this example, three discharge outlets 68 are provided in the buffer 64. Each discharge outlet 68 has a circular shape and is arranged in a line along the left-right direction. Of course, the specific shape, number, and arrangement of the discharge outlets 68 are not limited. For example, the discharge outlets 68 may be rectangular or the like, and may be arranged in a vertical or diagonal direction, or in a lattice pattern.

[0137] As the rotor 20 rotates, the plasma raw material 1 accumulates in the buffer 64. The amount of plasma raw material 1 held by the buffer 64 gradually increases, and is eventually discharged from the right side of the skimmer 22a. Furthermore, because an outlet 68 is provided in this example, the plasma raw material 1 is also discharged from the outlet 68 at the same time.

[0138] When the rotation speed of the rotor 20 is high, the plasma raw material 1 accumulates in the buffer 64 at a high speed, so that discharge from the right side alone cannot keep up with the accumulation, and the plasma raw material 1 held by the buffer 64 may become saturated. Saturation of the plasma raw material 1 may affect the operation of various mechanisms, including the skimmer 22a. By providing a discharge port 68 as in this example, the discharge capacity of the buffer 64 for the plasma raw material 1 is improved, making it possible to prevent saturation. In addition, it becomes more difficult for the plasma raw material 1 to be discharged from the left side of the skimmer 22a, making it possible to suppress the effect on the film thickness.

[0139] <Fourth embodiment> [Block-shaped skimmer] FIG. 10 is a schematic diagram showing a configuration example of the plasma generation mechanism 6. As shown in FIG. FIG. 11 is a schematic diagram showing an example of the configuration of the block member 71. As shown in FIG. In this example, the plasma generation mechanism 6 has a block member 71. In Fig. 10, the block member 71 is diagrammatically illustrated by a diagonal line pattern. In Fig. 11, an example of a specific shape of the block member 71 is illustrated.

[0140] The block member 71 has skimmers 22a and 22b, and a cover member 72. The skimmers 22a and 22b have a rectangular plate shape. The cover member 72 has a front surface 73 and a back surface that are fan-shaped with a central angle of approximately 90 degrees, and a side surface 75 that is configured along the front surface 73. Of course, the specific shape of the cover member 72 is not limited, and any shape may be adopted within the range in which the present technology can be realized. In addition, the cover member 72 is made of a material having rigidity, such as metal, but the specific material is not limited.

[0141] Skimmer 22a is disposed parallel to the XY directions so as to cover almost the entire upper surface of side surface 75. Skimmer 22b is disposed parallel to the YZ directions so as to cover the entire left surface of side surface 75.

[0142] The block member 71 is arranged so that the side surfaces on the far side (negative side in the Y direction) of the skimmers 22a and 22b face the surface 41 of the disk section 44 at a predetermined distance. The predetermined distance is appropriately set according to the desired film thickness. As shown in FIG. 10, the block member 71 is arranged so that roughly half of the lower side is immersed in the plasma raw material 1 contained in the raw material container 21. That is, the block member 71 has an immersed portion immersed in the plasma raw material 1 contained in the raw material container 21, and an exposed portion exposed from the plasma raw material 1 contained in the raw material container 21. Of the block member 71 (hatched portion) in FIG. 10, the portion below the liquid surface corresponds to the immersed portion, and the portion above corresponds to the exposed portion. That is, if the height of the liquid surface changes, the shapes of the immersed portion and the exposed portion also change. The cover member 72 is arranged between the rotor 20 and the cover structure 40.

[0143] In this example, the film thickness is finally adjusted by the skimmer 22a, but before that, the film thickness is adjusted by the skimmer 22b. In the part of the skimmer 22b above the liquid surface (thick line part 74 in FIG. 10), the plasma raw material 1 attached to the surface 41 of the disk part 44 is scraped off by the skimmer 22b, and the film thickness is adjusted as usual. On the other hand, the part of the skimmer 22b below the liquid surface serves to limit the amount of plasma raw material 1 that is pulled by the disk part 44 and moves due to shear stress to the distance between the skimmer 22b and the disk part 44. In other words, when the disk part 44 passes through the cover member 72, the plasma raw material 1 that is located farther from the disk part 44 than the distance between the skimmer 22b and the disk part 44 does not follow the movement of the disk part 44. As a result, the speed of the plasma raw material 1 at the distant position is slower than the speed of the plasma raw material 1 scraped off by the skimmer 22b and attached to the disk part 44. Therefore, the plasma raw material 1 located at a distance hardly moves at all, and splashing of the liquid is kept to a minimum.

[0144] Splashing is also blocked by cover member 72. Specifically, of the exposed portion of cover member 72, surface 73 blocks splashing toward the front side in FIG. 10, and side surface 75 blocks splashing toward the right side, upper left side, etc. In this way, cover member 72 having a shielding function is disposed over a wide range, so splashing can be further suppressed.

[0145] Depending on the arrangement of other mechanisms of the plasma generation mechanism 6, restrictions may be placed on the arrangement of the skimmers 22a and 22b, making it impossible to adopt the arrangement shown in Fig. 2. In such a case, by adopting an arrangement as in this example without arranging the skimmer 22a on the upper side, it is possible to secure a space for arranging other mechanisms on the upper side. The block member 71 corresponds to an embodiment of a first member according to the present technology. The cover member 72 corresponds to one embodiment of a shield according to the present technology.

[0146] FIG. 12 is a schematic diagram showing a configuration example of the plasma generation mechanism 6. As shown in FIG. In this example as well, the plasma generation mechanism 6 has a block member 78. In Fig. 12, the block member 78 is diagrammatically shown by a diagonal line pattern.

[0147] Block member 78 has skimmers 22a and 22b, and a cover member 79. Cover member 79 consists of a surface 80 having a shape obtained by hollowing out a circle at the center from a sector shape with a central angle of approximately 150 degrees, and side surfaces. Cover member 79 is disposed opposite surface 41 of disk portion 44 from approximately the 11 o'clock to 4 o'clock position. In other words, the entire block member 78 is exposed to the plasma raw material 1 contained in raw material container 21.

[0148] The vicinity of the end of the surface 80 in the 11 o'clock direction forms an inclined surface 81 that is inclined toward the back side (negative side in the Y direction). The inclined surface 81 has a roughly rectangular shape. In FIG. 12, the boundary between the inclined surface 81 and the surface of the surface 80 that is not the inclined surface 81 is indicated by a dashed line. The inclined surface 81 is a surface that faces the cover structure 40 in the depth direction (Y direction). Note that the specific shape, inclination angle, etc. of the inclined surface 81 are not limited.

[0149] In this example, the skimmer 22b also has a rectangular plate shape and is disposed so as to cover the end portion of the side surface in the 4 o'clock direction. As shown in Fig. 12, the skimmer 22b is disposed parallel to the XY plane.

[0150] In this example, first the thickness of the plasma raw material 1 is adjusted by skimmer 22b, and then the film of plasma raw material 1 reaches the position of inclined surface 81. The plasma raw material 1 then passes between inclined surface 81 and surface 41. In other words, the tip of inclined surface 81 functions as skimmer 22a. The distance between the tip of inclined surface 81 and surface 41 is set appropriately according to the desired film thickness.

[0151] The distance between the surface 41 of the disk portion 44 and the surface 80 of the cover member 79 in the middle portion (the position between the skimmers 22a and 22b) may be arbitrary. For example, if the distance in the middle portion is made large, a cavity will be formed in the middle portion, and the plasma raw material 1 may accumulate in the cavity, which may interfere with the operation of the plasma generation mechanism 6. To prevent this, the distance may be set so that the cavity is as small as possible. This method is promising from the viewpoint of workability. Alternatively, the distance may be changed continuously, or all parts may have the same minimum distance. Such freedom in the distance allows for a sloping structure including the sloping surface 81 to be used.

[0152] In this example, the cover member 79 can block the liquid splash over a wide range such as the front side, right side, and upper side of FIG. 12. The faster the disk part 44 rotates, the more plasma raw material 1 splashes above the liquid surface, and the structure shown in FIG. 2 may not be able to prevent the liquid splash. In such a case, by arranging the cover member 79 as shown in FIG. 12, it is possible to cover above the liquid surface and suppress the adverse effect of the liquid splash on the irradiation surface of the energy beam EB. In addition, depending on the arrangement of the skimmers 22a and 22b, they may block the energy beam EB or the radiation R. By providing the inclined surface 81 as in this example and making the tip function as the skimmer 22a, it is possible to prevent the light from being blocked. That is, the inclined surface 81 is arranged to allow a large space for the entrance of the energy beam EB or the extraction of the radiation R. This allows the light to be stably incident on, for example, a tool or a measuring instrument. The block member 78 corresponds to an embodiment of the second member according to the present technology. The cover member 79 corresponds to one embodiment of a shield according to the present technology.

[0153] <Other embodiments> The present technology is not limited to the above-described embodiment, and various other embodiments can be realized. [Placement on back side] In FIG. 2, a skimmer 22b may be further disposed facing the back surface 42 of the disk portion 44. In the portion (right side) where the disk portion 44 rises above the liquid surface, liquid splashing occurs not only near the front surface 41 and the side surface 39 but also near the back surface 42. By additionally disposing the skimmer 22b on the back surface 42 side, it is possible to more effectively block liquid splashing. Also, in FIGS. 10 and 11, for example, the skimmer 22a may have a U-shape, and the skimmer 22a may be disposed so that the disk portion 44 is sandwiched by the U-shape. In this case, the skimmer 22a faces not only the front surface 41 of the disk portion 44 but also the back surface 42. This makes it possible to suppress excessive adhesion of the plasma raw material 1 to the back surface 42 and liquid splashing in the vicinity of the back surface 42. Since the film thickness adjustment is not required on the back surface 42, it is not necessary to precisely adjust the distance between the back surface 42 and the skimmer 22a.

[0154] [Other film thickness adjustment mechanisms and shields] In addition to the configuration of FIG. 2, other film thickness adjustment mechanisms may be provided. This allows for more accurate film thickness adjustment. Similarly, other shields may be provided. This allows for more effective shielding of liquid splashes.

[0155] [Type of plasma raw material] As the plasma raw material 1, tin, lithium, gadolinium, terbium, gallium, bismuth, indium, or an alloy containing at least one of these materials can be used. For example, when EUV light is extracted as the radiation R and the EUV light is used in a microscope, bismuth is used as the material. When X-rays are generated as the radiation R, indium is used as the material. By using these materials, it is possible to generate high-quality radiation R. There are no other limitations on the specific type of the plasma raw material 1. For example, since the plasma raw material 1 also serves as a lubricant between metals, the type of the plasma raw material 1 may be determined taking this role into consideration.

[0156] [Types of energy beams and radiation] The specific types of the energy beam EB and the radiation R are not limited. For example, a laser beam can be used as the energy beam EB. This makes it possible to generate high-quality radiation R. Furthermore, for example, extreme ultraviolet light (EUV light) or X-rays can be generated as the radiation R. This makes it possible to use the radiation R efficiently.

[0157] The configurations of the plasma generating mechanism, the rotating body, the raw material container, the skimmer, the cover structure, the cover member, the buffer, the edge, the outlet, the block member, and the light source device described with reference to the drawings are merely one embodiment, and can be modified as desired without departing from the spirit of the present technology. In other words, any other configuration for implementing the present technology may be adopted.

[0158] In the present disclosure, when the term "approximately" is used, this is used only to facilitate understanding of the description, and there is no special meaning in using or not using the term "approximately". That is, in the present disclosure, concepts that define the shape, size, positional relationship, state, etc., such as "center", "central", "uniform", "equal", "same", "orthogonal", "parallel", "symmetric", "extended", "axial direction", "rectangular", "cubic", "rectangular", "polygonal", "circular", "cylindrical", "disk", "ring", "rod", "plate-like", "L-shaped", "cone-like", etc., include concepts such as "substantially center", "substantially central", "substantially uniform", "substantially equal", "substantially the same", "substantially orthogonal", "substantially parallel", "substantially symmetric", "substantially extended", "substantially axial direction", "substantially rectangular", "substantially cubic", "substantially rectangular", "substantially polygonal", "substantially circular", "substantially cylindrical", "substantially disk", "substantially ring", "substantially rod", "substantially plate-like", "substantially L-shaped", "substantially cone-like", etc. For example, it also includes a state that is included within a predetermined range (e.g., a range of ±10%) based on the standard of "perfectly centered," "perfectly central," "perfectly uniform," "perfectly equal," "perfectly the same," "perfectly orthogonal," "perfectly parallel," "perfectly symmetrical," "perfectly extended," "perfectly axial," "perfectly rectangular," "perfectly cubic," "perfectly rectangular," "perfectly polygonal," "perfectly circular," "perfectly cylindrical," "perfectly disc-shaped," "perfectly ring-shaped," "perfectly rod-shaped," "perfectly plate-shaped," "perfectly L-shaped," "perfectly cone-shaped," etc. Therefore, even if the word "approximately" is not added, the concept expressed by adding "approximately" may be included. Conversely, a perfect state is not excluded when the state is expressed by adding "approximately."

[0159] In the present disclosure, expressions using "more than", such as "greater than A" and "smaller than A", are expressions that comprehensively include both concepts that include equivalent to A and concepts that do not include equivalent to A. For example, "greater than A" is not limited to cases that do not include equivalent to A, but also includes "A or greater". Furthermore, "smaller than A" is not limited to "less than A", but also includes "A or less". When implementing the present technology, specific settings, etc. may be appropriately adopted from the concepts included in "greater than A" and "smaller than A" so that the effects described above are achieved.

[0160] It is also possible to combine at least two of the characteristic parts of the present technology described above. That is, the various characteristic parts described in each embodiment may be arbitrarily combined without distinction between the embodiments. In addition, the various effects described above are merely examples and are not limited thereto, and other effects may be exhibited. [Explanation of symbols]

[0161] 6. Plasma generation mechanism 20...Rotating body 21…Raw material container 22a, 22b…Skimmer 36…Bottom surface 39…Side 40...Cover structure 41…Surface 42…Back side 43...Immersion area 46…Attachment area 60, 72, 79...Cover members 64...buffer 65…Edge 68…Discharge port 71, 78...Block members 81…Slope surface 100...Light source device

Claims

1. A light-emitting unit that converts a liquid raw material into plasma by irradiating it with an energy beam to generate radiation, a housing portion through which the energy beam can pass; a storage section disposed inside the housing section and capable of storing the liquid raw material; a rotor that is rotatable about a rotation axis that is in a direction intersecting with the direction of gravity, the rotor having a first region that is immersed in the liquid source contained in the container, and a second region that is downstream of the first region in the rotation direction of the rotor, the liquid source adheres to the second region, and includes an irradiation position of the energy beam; a first film thickness adjustment mechanism that is disposed at a position upstream of the irradiation position and adjusts a film thickness of the liquid source adhered to the second region to a first film thickness; a shield that is disposed between the first film thickness adjustment mechanism and a liquid surface of the liquid source contained in the container and between the second region and the housing, and has an opposing surface that faces the liquid surface in a vertical direction; A light emitting unit comprising:

2. A light-emitting unit that converts a liquid raw material into plasma by irradiating it with an energy beam to generate radiation, A storage section capable of storing the liquid raw material; a rotor that is rotatable about a rotation axis that is in a direction intersecting with the direction of gravity, the rotor having a first region that is immersed in the liquid source contained in the container, and a second region that is downstream of the first region in the rotation direction of the rotor, the liquid source adheres to the second region, and includes an irradiation position of the energy beam; a first film thickness adjustment mechanism that is disposed at a position upstream of the irradiation position and adjusts a film thickness of the liquid source adhered to the second region to a first film thickness; a second film thickness adjustment mechanism that is disposed upstream of the first film thickness adjustment mechanism and faces a first surface that is a surface of the second region that includes the irradiation position, and adjusts the film thickness to a second film thickness that is thicker than the first film thickness; A light emitting unit comprising:

3. 2. The light emitting unit according to claim 1, The shield includes a second film thickness adjustment mechanism that is disposed upstream of the first film thickness adjustment mechanism and faces a first surface that is a surface of the second region that includes the irradiation position, and adjusts the film thickness to a second film thickness that is thicker than the first film thickness. Light emitting unit.

4. The light emitting unit according to claim 2, further comprising: a housing portion through which the energy beam can pass; The housing is disposed inside the housing, The second film thickness adjustment mechanism is disposed between the first film thickness adjustment mechanism and a liquid surface of the liquid source contained in the container, and between the second region and the housing, and includes a shield having an opposing surface that faces the liquid surface in the up-down direction. Light emitting unit.

5. The light-emitting unit according to claim 3 or 4, The second region is composed of the first surface, a second surface opposite to the first surface, and a side surface of the rotor. Light emitting unit.

6. The light-emitting unit according to claim 5 , The shield and the second film thickness adjustment mechanism are disposed so as to divide the rotor along the liquid surface when viewed from the direction of the rotation axis. Light emitting unit.

7. The light-emitting unit according to claim 5 , The shield and the second film thickness adjustment mechanism are disposed along the liquid surface at a position upstream of the irradiation position in the rotation direction of the rotor when viewed from the direction of the rotation axis. Light emitting unit.

8. The light-emitting unit according to claim 5 , The shield is disposed opposite the side surface. Light emitting unit.

9. The light-emitting unit according to claim 5 , The shield is disposed opposite the second surface. Light emitting unit.

10. The light-emitting unit according to claim 3 or 4, The shield and the second film thickness adjustment mechanism are formed of a single member. Light emitting unit.

11. 11. The light emitting unit according to claim 10, The shield and the second film thickness adjustment mechanism have a plate-like shape. Light emitting unit.

12. The light-emitting unit according to claim 3 or 4, the shield and the second film thickness adjustment mechanism are formed of different members, The second film thickness adjusting mechanism is disposed downstream of the shield. Light emitting unit.

13. The light-emitting unit according to claim 5 , the first film thickness adjustment mechanism is disposed opposite to the first surface, The first film thickness adjustment mechanism has a protruding portion that protrudes toward the first surface and adjusts the film thickness to a first film thickness, and a holding portion that holds the liquid source attached to the first surface. Light emitting unit.

14. 14. The light emitting unit according to claim 13, The holding unit is provided opposite to the first surface and has a discharge port for discharging the liquid source to the outside of the holding unit. Light emitting unit.

15. The light emitting unit according to claim 2, further comprising: a housing portion through which the energy beam can pass and in which a container portion is disposed; a first member including an immersion portion immersed in the liquid source contained in the container portion and an exposure portion exposed from the liquid source contained in the container portion, the first film thickness adjustment mechanism, the second film thickness adjustment mechanism, and a shielding body disposed between the rotating body and the housing portion. Light emitting unit.

16. The light emitting unit according to claim 2, further comprising: a housing portion through which the energy beam can pass and in which a container portion is disposed; a second member that is exposed from the liquid source contained in the container and includes the first film thickness adjustment mechanism, the second film thickness adjustment mechanism, and a shielding body that is disposed between the rotor and the housing. Light emitting unit.

17. 17. The light emitting unit according to claim 16, The first film thickness adjustment mechanism has an inclined surface facing the shield. Light emitting unit.

18. 3. The light-emitting unit according to claim 1, The energy beam is a laser beam. Light emitting unit.

19. 3. The light-emitting unit according to claim 1, The radiation is extreme ultraviolet light or X-rays. Light emitting unit.

20. 3. The light-emitting unit according to claim 1, The liquid source is tin, lithium, gadolinium, terbium, gallium, bismuth, indium, or an alloy containing at least one of these materials. Light emitting unit.

Images