Semiconductor wafer handling device and semiconductor wafer test system

Abstract

To provide a semiconductor wafer handling device for testing a device under test (DUT) including an electronic circuit and an optical circuit.SOLUTION: A semiconductor wafer handling device 30 moves a semiconductor wafer 100 provided with a DUT 110 to press a terminal 111 of the DUT 110 disposed on an upper surface 101 of the semiconductor wafer 100 against a probe 23 of a probe card 20. The semiconductor wafer handling device 30 includes an optical probe 71 for inputting / outputting an optical signal to / from a light connection part 112 of the DUT 110 disposed on a lower surface 102 of the semiconductor wafer 100.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a semiconductor wafer handling device that handles a semiconductor wafer in order to test a circuit element under test (DUT: Device Under Test) formed on the semiconductor wafer, and a semiconductor wafer test system that tests the DUT formed on the semiconductor wafer. [Background technology]

[0002] 2. Description of the Related Art There is known a wafer test system that holds a semiconductor wafer on a wafer chuck, and brings probes of a probe card into contact with semiconductor devices formed on the semiconductor wafer to inspect the electrical characteristics of the semiconductor devices (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2007-129090 A Summary of the Invention [Problem to be solved by the invention]

[0004] The above-mentioned wafer test system has a problem in that it tests DUTs that have only electronic circuits, and cannot test DUTs that have optical circuits in addition to electronic circuits.

[0005] An object of the present invention is to provide a semiconductor wafer handling device and a semiconductor wafer test system for testing a DUT having electronic and optical circuits. [Means for solving the problem]

[0006] [1] A first aspect of the present invention is a semiconductor wafer handling device that moves a semiconductor wafer on which a DUT is formed and presses terminals of the DUT, which are arranged on a first surface of the semiconductor wafer, against contacts of a probe card, the semiconductor wafer handling device being equipped with an optical probe that inputs and outputs optical signals to and from an optical connection portion of the DUT, which is arranged on a second surface of the semiconductor wafer.

[0007] [2] A second aspect of the present invention may be a semiconductor wafer handling apparatus according to the first aspect, further comprising a first moving device that moves the optical probe relative to the semiconductor wafer.

[0008] [3] A third aspect of the present invention is a semiconductor wafer handling apparatus according to the second aspect, further comprising: a holding member for holding the semiconductor wafer; and a second moving device for moving the holding member relative to the probe card, and the first moving device may be a semiconductor wafer handling apparatus for moving the optical probe relative to the semiconductor wafer held by the holding member.

[0009] [4] A fourth aspect of the present invention may be a semiconductor wafer handling apparatus according to the third aspect, further comprising a contact member that contacts the second surface of the semiconductor wafer, and a third moving device that moves the contact member and the first moving device relative to the semiconductor wafer held by the holding member.

[0010] [5] A fifth aspect of the present invention may be a semiconductor wafer handling apparatus according to the fourth aspect, wherein the contact member has a contact surface that contacts the second side of the semiconductor wafer and a recess that opens into the contact surface, and the optical probe is inserted into the recess so as to be movable relative to the contact member.

[0011] [6] A sixth aspect of the present invention may be a semiconductor wafer handling device according to the fourth aspect, wherein the contact member has a contact surface that contacts the second side of the semiconductor wafer and an insertion hole that opens into the contact surface, and the optical probe is inserted into the insertion hole so as to be movable relative to the contact member.

[0012] [7] A seventh aspect of the present invention may be a semiconductor wafer handling apparatus according to any one of aspects four to six, wherein the third moving device includes a support member to which the contact member and the first moving device are fixed, and the first moving device moves the optical probe relative to the contact member.

[0013] [8] Aspect 8 of the present invention may be a semiconductor wafer handling apparatus according to any one of aspects 4 to 7, further comprising a control device that controls the second and third moving devices, and the control device controls the second and third moving devices to bring the holding member and the contact member closer to the probe card in a pressing direction of the DUT against the probe card, thereby pressing the terminals of the DUT against the contactors of the probe card.

[0014] [9] A ninth aspect of the present invention is a semiconductor wafer handling apparatus according to any one of aspects four to eight, wherein the contact member has a contact surface that contacts the second side of the semiconductor wafer, and the contact surface has a size capable of contacting N of the DUTs among a plurality of the DUTs formed on the semiconductor wafer, and the semiconductor wafer handling apparatus comprises N of the optical probes arranged to correspond to the N DUTs, and N of the first moving devices that move the N optical probes independently of one another, where N is a natural number greater than or equal to 1 and less than or equal to 8.

[0015]

[10] A tenth aspect of the present invention may be a semiconductor wafer handling apparatus according to the ninth aspect, wherein the third moving device moves the contact member and the N first moving devices relative to the semiconductor wafer held by the holding member.

[0016]

[11] An eleventh aspect of the present invention may be a semiconductor wafer handling apparatus according to any one of aspects 3 to 10, wherein the holding member holds an outer peripheral portion of the second or first surface of the semiconductor wafer while exposing the first and second surfaces of the semiconductor wafer.

[0017]

[12] A twelfth aspect of the present invention may be a semiconductor wafer handling apparatus according to any one of aspects 3 to 11, wherein the holding member includes an annular holding portion that holds an outer peripheral portion of the second or first surface of the semiconductor wafer.

[0018]

[13] A thirteenth aspect of the present invention may be a semiconductor wafer handling device according to any one of the first to twelfth aspects, wherein the optical probe is provided with an optical transmission line capable of transmitting an optical signal.

[0019]

[14] A fourteenth aspect of the present invention may be the semiconductor wafer handling device of any one of the first to thirteenth aspects, wherein the optical connecting portion includes a grating coupler.

[0020]

[15] A fifteenth aspect of the present invention may be a semiconductor wafer handling apparatus according to any one of the first to fourteenth aspects, the semiconductor wafer handling apparatus being equipped with at least one of a heating device that heats the DUT via the contact member and a cooling device that cools the DUT via the contact member.

[0021]

[16] A sixteenth aspect of the present invention is a semiconductor wafer testing system for testing a DUT formed on a conductor wafer, comprising: a probe card for inputting and outputting electrical signals to a terminal of the DUT arranged on a first surface of the semiconductor wafer; an optical probe for inputting and outputting optical signals to an optical connection portion of the DUT arranged on a second surface of the semiconductor wafer; and a test device connected to the probe card so as to be capable of transmitting the electrical signal, and connected to the optical probe so as to be capable of transmitting the optical signal.

[0022]

[17] A seventeenth aspect of the present invention is the semiconductor wafer test system of the sixteenth aspect, which is a semiconductor wafer test system including the semiconductor wafer handling device of any one of the first to fifteenth aspects. Effect of the Invention

[0023] In the present invention, an optical probe can be used to input and output optical signals to and from an optical connection section arranged on the second surface of a semiconductor wafer, making it possible to provide a semiconductor wafer handling device and a semiconductor wafer testing system for testing a DUT having an electronic circuit and an optical circuit. [Brief description of the drawings]

[0024] [Figure 1] FIG. 1 is a diagram showing the overall configuration of a semiconductor wafer test system and the internal structure of a prober in an embodiment of the present invention. [Diagram 2] FIG. 2 is a cross-sectional view of a thermal head and an optical probe unit according to an embodiment of the present invention, and a block diagram showing a control system. [Diagram 3] FIG. 3(a) is a plan view showing a holding member in an embodiment of the present invention, and FIG. 3(b) is a cross-sectional view taken along line IIIB-IIIB in FIG. 3(a). [Figure 4] FIG. 4 is a plan view of a thermal head and an optical probe unit in an embodiment of the present invention. [Diagram 5]5(a) and 5(b) are a cross-sectional view and a plan view showing a modified example of the thermal head and the optical probe unit in the embodiment of the present invention. [Figure 6] FIG. 6 is a cross-sectional view showing a probe card, a thermal head, and an optical probe unit in another embodiment of the present invention. [Figure 7] 7(a) to 7(c) are cross-sectional views showing a method for pressing a semiconductor wafer against a probe card by a prober in the embodiment of the present invention. [Figure 8] FIG. 8 is a diagram showing the overall configuration of a semiconductor wafer test system and the internal structure of a prober in still another embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0026] Fig. 1 is a diagram showing the overall configuration of a semiconductor wafer testing system 1 and the internal structure of a prober 30 in this embodiment. Fig. 2 is a cross-sectional view of a thermal head 60 and an optical probe unit 70 in this embodiment, and a block diagram showing a control system. Figs. 3(a) and 3(b) are a plan view and a cross-sectional view showing a holding member 40 in this embodiment. Fig. 4 is a plan view of the thermal head 60 and the optical probe unit 70 in this embodiment.

[0027] The semiconductor wafer testing system 1 of this embodiment is a system that tests a DUT 110 formed on a semiconductor wafer 100. As shown in Fig. 1, the semiconductor wafer testing system 1 includes a tester 10, a probe card 20, and a prober 30. The prober 30 corresponds to an example of a "semiconductor wafer handling device" in an aspect of the present invention.

[0028] A plurality of DUTs 110 are formed on the semiconductor wafer 100. Each DUT 110, which is a test target of the semiconductor wafer test system 1, is a device capable of handling electric signals and optical signals, and is a composite circuit element equipped with an electronic circuit and an optical circuit. The optical circuit is formed, for example, by using silicon photonics technology. The DUT 110 includes a terminal 111 for inputting and outputting electric signals, and an optical connection unit 112 for inputting and outputting optical signals. Although not particularly limited, a specific example of the optical connection unit 112 may be, for example, a grating coupler. The terminal 111 is disposed on the upper surface (first surface) 101 of the semiconductor wafer 100, whereas the optical connection unit 112 is disposed on the lower surface (second surface) 102 of the semiconductor wafer 100.

[0029] When testing the DUT 110, an electrical signal is input to and output from the DUT 110 via the terminal 111, and an optical signal is input to and output from the DUT 110 via the optical connection section 112. For example, when this test is completed, the semiconductor wafer 100 is diced to separate the DUTs 110, and the separated DUTs 110 are mounted on a substrate to which an optical fiber or the like is connected to become a final product. This final product is, for example, a CPO (Co-Packaged Optics) device.

[0030] The tester 10 is a test apparatus that tests a semiconductor device 100 using electrical and optical signals, and includes a test head 11 and a main frame (tester body) 12, as shown in Fig. 1, and the test head 11 is connected to the main frame 12 via a cable. A probe card 20 is electrically connected to the test head 11. The probe card 20 enters the inside of the prober 30 through an opening 32 formed in an upper base 31 of the prober 30. The probe card 20 is fixed relatively to the prober 30.

[0031] Probe card 20 includes wiring board 21 and probe head 22 mounted on wiring board 21. Probe head 22 corresponds to one DUT 110 on semiconductor wafer 100. Probe head 22 includes a plurality of probes 23 and a housing 24, as shown in Fig. 2. Probe 23 corresponds to an example of a "contactor" in this embodiment of the present invention.

[0032] The probe 23 is an electric probe that comes into contact with a terminal 111 of the DUT 110 of the semiconductor wafer 100. The multiple probes 23 are arranged to correspond to the multiple terminals 111 of one DUT 110 on the semiconductor wafer 100. Although not particularly limited, specific examples of the probe 23 include a pogo pin, a vertical probe needle, a cantilever probe needle, an anisotropic conductive rubber sheet, a bump provided on a membrane, or a contactor manufactured using MEMS technology.

[0033] Probe 23 is held in housing 24, and housing 24 is fixed to wiring board 21 by screws or the like, thereby mounting probe head 22 on wiring board 21. Note that wiring board 21 may directly hold probe 23, in which case housing 24 can be omitted.

[0034] As shown in FIGS. 1 and 2, the prober 30 includes a holding member 40, a second moving device 50, a thermal head 60, an optical probe unit 70, a third moving device 80, and a control device 90.

[0035] In this embodiment, the semiconductor wafer 100 held by the holding member 40 is positioned relative to the probe card 20 by the second moving device 50. In addition, the third moving device 80 brings the thermal head 60 into contact with the lower surface 102 of the semiconductor wafer 100, and the thermal head 60 adjusts the temperature of the DUT 110. Then, the second and third moving devices 50 and 80 press the semiconductor wafer 100 against the probe card 20 to electrically connect them. In this state, the optical probe unit 70 positions the optical probe 71 relative to the optical connection portion 112 of the DUT 110, and then the tester 10 inputs and outputs electrical signals to and from the DUT 110 via the probe card 20 and inputs and outputs optical signals to and from the DUT 110 via the optical connection portion 112, thereby testing the DUT 110.

[0036] The holding member 40 is a member that holds the semiconductor wafer 100. The holding member 40 holds the lower surface (second surface) 102 of the semiconductor wafer 100, and the upper surface (first surface) 101 of the semiconductor wafer 100 is entirely exposed. As shown in FIG. 3(a) and FIG. 3(b), the holding member 40 has a circular annular holding portion 41. The holding portion 41 has an opening 42 having an inner diameter smaller than the outer diameter of the semiconductor wafer 100. Therefore, the holding portion 41 holds the outer peripheral portion of the lower surface 102 of the semiconductor wafer 100, and the portion of the lower surface 102 of the semiconductor wafer 100 other than the outer peripheral portion (the portion of the lower surface 102 of the semiconductor wafer 100 that is inside the outer peripheral portion) is exposed through the opening 42. The holding member 40 may have a holding mechanism that suction-holds the outer peripheral portion of the semiconductor wafer 100. Alternatively, the holding member 40 may have a holding mechanism that holds the outer peripheral portion of the semiconductor wafer 100 by mechanical clamping.

[0037] The second moving device 50 is a device that moves the holding member 40. The second moving device 50 can move the holding member 40 in the XYZ axis directions in the figure and rotate it around the Z axis (θz). The second moving device 50 aligns the semiconductor wafer 100 with respect to the probe card 20 so that the multiple terminals 111 of the DUT 110 face the multiple probes 23 of the probe head 22, respectively. The second moving device 50 is fixed to the frame of the prober 30, for example. The installation position of the second moving device 50 is not particularly limited to the above, as long as it is fixed relatively to the frame of the prober 30. For example, the second moving device 50 may be fixed to the upper base 31 or the lower base 32 of the prober 30.

[0038] Although not particularly limited, the second moving device 50 includes, for example, an actuator, a transmission mechanism, and a guide mechanism. Although not particularly limited, a specific example of the actuator can be, for example, a motor including an electric motor (rotary motor, linear motor, etc.) or an electric actuator including the electric motor, etc., while a specific example of the transmission mechanism can be, for example, a ball screw mechanism, and an example of the guide mechanism can be, for example, a linear guide mechanism including a guide rail and a block that can slide on the guide rail.

[0039] The thermal head 60 is a temperature adjustment device that contacts the lower surface 102 of the semiconductor wafer 100 to adjust the temperature of the DUT 110. As shown in FIG. 2, the thermal head 60 includes a contact member 61, a heater 65, a flow path 66, and a temperature sensor 67.

[0040] The contact member 61 is a block-shaped member having a flat contact surface 62 that contacts the lower surface 102 of the semiconductor wafer 100. The heater 65 is embedded in the contact member 61. The heater 65 is provided inside the contact member 61 so as to cover the entire contact surface 62. Although not particularly limited, specific examples of the heater 65 include, for example, an aluminum nitride heater, a silicon nitride heater, and a ceramic heater such as a PTC heater, a polyimide heater, and a cartridge heater. The heater 65 is connected to a control device 90, and generates heat by power supplied from the control device 90 to heat the DUT 110 via the contact member 61.

[0041] In addition, a flow path 66 through which a coolant having a temperature lower than room temperature passes is formed inside the contact member 61. This flow path 66 is also provided inside the contact member 61 so as to correspond to the entire area of ​​the contact surface 62. A coolant supply device 68 is connected to this flow path 66, and the coolant supplied from this coolant supply device 68 passes through the flow path 66, thereby cooling the DUT 110 via the contact member 61. As the coolant flowing through this flow path 66, a liquid or a gas may be used. Although not particularly limited, specific examples of the liquid coolant include water and a fluorine-based inert liquid. On the other hand, specific examples of the gas coolant include air and nitrogen.

[0042] The configuration of the temperature adjustment device that adjusts the temperature of the DUT 110 is not particularly limited to the above. For example, instead of a heater, a hot medium at a temperature higher than room temperature may be passed through a flow path in the contact member 61. Alternatively, a Peltier element may be used as the heater, or a Peltier element may be used instead of the coolant. Also, the temperature adjustment device may not include either the heating device or the cooling device. Alternatively, the contact member 61 may not have a temperature adjustment function.

[0043] A temperature sensor 67 is also embedded in the contact member 61. The temperature sensor 67 is provided inside the contact member 61 so as to be located in the vicinity of the contact surface 62. This temperature sensor 67 detects the temperature of the DUT 110 via the contact surface 62. The temperature sensor 67 is connected to the control device 90 so as to be able to output the detection result.

[0044] 2 and 4, the optical probe unit 70 includes an optical probe 71 and a first moving device 74. The optical probe 71 is an optical input / output unit for inputting and outputting an optical signal to and from an optical connection unit 112 formed on the lower surface 102 of the semiconductor wafer 100. The optical probe 71 includes a pair of optical fibers 72a, 72b and a mirror 73.

[0045] Each of the optical fibers 72a and 72b is arranged so that its optical axis is along the XY plane in the figure, and the pair of optical fibers 72a and 72b are arranged substantially parallel to each other. The optical fibers 72a and 72b are connected to the tester 10 so as to be able to transmit optical signals. The mirror 73 is arranged on the optical axes of the optical fibers 72a and 72b.

[0046] When testing the DUT 110, with the tip of the optical probe 71 facing the optical connection portion 112 of the semiconductor wafer 100, an optical signal input from the tester 10 is output from one optical fiber 72a toward the mirror 73, and the optical signal is reflected by the mirror 73 and input to the optical connection portion 112 of the DUT 110. On the other hand, an optical signal output from the optical connection portion 112 of the DUT 110 is reflected by the mirror 73 and input to the tester 10 via the other optical fiber 72b. That is, in this embodiment, one optical fiber 72a functions as an input optical transmission path, and the other optical fiber 72b functions as an output optical transmission path.

[0047] In this embodiment, the optical probe 71 inputs and outputs an optical signal in a non-contact state with the optical connection unit 112 of the DUT 110, but the optical probe 71 may be in contact with the optical connection unit 112. Furthermore, the optical probe 71 may include optical elements other than the optical fibers 72a and 72b and the mirror 73 as an optical transmission path for transmitting an optical signal.

[0048] The optical probe 71 is supported by a first moving device 74. The first moving device 74 is an alignment device that positions the optical probe 71 with respect to the optical connection portion 112 of the semiconductor wafer 100. That is, in this embodiment, the alignment of the optical probe 71 with respect to the optical connection portion 112 can be performed independently of the alignment of the terminal 111 of the DUT 110 with respect to the electric probe 23 of the probe card 20. The first moving device 74 can move the optical probe 71 in the XY axis direction in the figure and rotate it around the Z axis (θz). Note that the degree of freedom of the first moving device 74 may be six degrees of freedom including movement in the Z axis direction and rotation around the X axis and Y axis (θx and θy) in addition to the above three degrees of freedom.

[0049] Although not particularly limited, the first moving device 74 includes, for example, an actuator, a transmission mechanism, and a guide mechanism. Although not particularly limited, a specific example of the actuator can be, for example, a motor including an electric motor (a rotary motor, a linear motor, etc.), or an electric actuator including the electric motor and a piezoelectric actuator (an actuator using a piezoelectric element), etc., while a specific example of the transmission mechanism can be, for example, a ball screw mechanism, and an example of the guide mechanism can be, for example, a linear guide mechanism including a guide rail and a block that can slide on the guide rail.

[0050] The third moving device 80 is a device that moves the thermal head 60 and the optical probe unit 70. As shown in Fig. 1, the third moving device 80 includes a support member 81 and an elevating mechanism 82 that moves the support member 81 along the Z-axis direction.

[0051] The thermal head 60 and the optical probe unit 70 are supported by a flat support member 81. Specifically, as shown in Fig. 2 and Fig. 4, the contact member 61 of the thermal head 60 and the first moving device 74 of the optical probe unit 70 are fixed to the support member 81. Therefore, the first moving device 74 is capable of moving the optical probe 71 relative to the thermal head 60.

[0052] A groove 63 is formed in the contact member 61 of the thermal head 60. This groove 63 is formed in the contact member 61 so that the groove 63 opens on the contact surface 62 that contacts the semiconductor wafer 100, and an optical probe 71 is inserted into this groove 63. Note that a space is provided between the optical probe 71 and the groove 63 so that the optical probe 71 can be moved and rotated by the first moving device 74 described above.

[0053] In this way, by overlapping the contact member 61 and the optical probe 71, the contact area of ​​the thermal head 60 with the DUT 110 can be increased while the optical probe 71 faces the optical connection portion 112 of the DUT 110. This allows the DUT 110 to be stably pressed against the probe card 20. Also, the temperature of the DUT 110 can be efficiently adjusted by the thermal head 60. The groove 63 corresponds to an example of a "recess" in an aspect of the present invention.

[0054] 1, the lifting mechanism 82 is installed on the lower base 33 of the prober 30 so that the support member 81 faces the probe head 22 of the probe card 20 in the Z-axis direction in the figure. When the lifting mechanism 82 raises the support member 81, the thermal head 60 comes into contact with the lower surface 102 of the semiconductor wafer 100, and the tip of the optical probe 71 of the optical probe unit 70 faces the optical connection portion 112 of the DUT 110. The third moving device 80 is a moving device independent of the above-mentioned second moving device 50, and is capable of moving the thermal head 60 and the optical probe unit 70 independently of the holding member 40.

[0055] Although not limited thereto, the lifting mechanism 82 includes, for example, an actuator, a transmission mechanism, and a guide mechanism. Although not limited thereto, specific examples of the actuator include a motor including an electric motor (rotary motor, linear motor, etc.) and an electric actuator including the electric motor, etc., while specific examples of the transmission mechanism include a ball screw mechanism, and an example of the guide mechanism includes a linear guide mechanism including a guide rail and a block that can slide on the guide rail.

[0056] The configuration of the thermal head and the optical probe unit is not particularly limited to the above. For example, the thermal head and the optical probe unit may be configured as shown in Fig. 5(a) and Fig. 5(b). Fig. 5(a) and Fig. 5(b) are a cross-sectional view and a plan view showing a modified example of the thermal head and the optical probe unit in this embodiment. Fig. 5(a) is a cross-sectional view taken along the line VA-VA in Fig. 5(b).

[0057] In the thermal head 60B and the optical probe unit 70B shown in FIG. 5(a) and FIG. 5(b), an insertion hole 64 is formed in the contact member 61 along the Z-axis direction so as to open to the contact surface 62, and the optical probe 71 is inserted into the insertion hole 64. In this modification, the optical probe 71 does not include a mirror 73 because the optical axes of the optical fibers 72a and 72b are arranged along the Z-axis direction in the figure. Note that a space is secured between the optical probe 71 and the insertion hole 64 so that the optical probe 71 can be moved and rotated by the first moving device 74. In this way, by arranging the optical probe 71 in the insertion hole 64 formed in the contact member 61, the contact area of ​​the thermal head 60 with the DUT 110 can be increased while the optical probe 71 faces the optical connection part 112 of the DUT 110.

[0058] In the above-described embodiment, only one DUT 110 is tested in one touchdown, but multiple DUTs 110 may be tested simultaneously in one touchdown. Fig. 6 is a cross-sectional view showing a probe card 20B, a thermal head 60C, and an optical probe unit 70B in another embodiment of the present invention.

[0059] For example, as shown in FIG. 6, a case will be described where two DUTs 110 are tested simultaneously in one touchdown. In this case, the probe card 20B includes two probe heads 22 arranged on the wiring board 21 so as to correspond to the two DUTs 110. The contact surface 62 of the thermal head 60C has a size that allows the contact of the two DUTs 110 with corresponding areas on the lower surface 102 of the semiconductor wafer 100, and the temperature of the two DUTs 110 can be adjusted by one thermal head 60. Meanwhile, two optical probe units 70B are provided on the support member 81 of the third moving device 80 so as to correspond to the two DUTs 110. Each optical probe unit 70B includes an optical probe 71 and a first moving device 74, similar to the optical probe unit 70B described above. The thermal head 60C and the two optical probe units 70B are provided on the same support member 81.

[0060] Instead of the thermal head 60C, two thermal heads 60B may be provided on the support member 81 so as to correspond to the two DUTs 110. In the example shown in Fig. 6, the optical probe unit 70 shown in Figs. 2 and 4 may be used instead of the optical probe unit 70B.

[0061] Although not particularly limited, the number N of DUTs 110 tested simultaneously in one touchdown is preferably 1 or more and 8 or less (1≦N≦8). In this case, the probe card includes N probe heads 22, the contact surface 62 of the thermal head has a size capable of contacting the N DUTs 110 among the DUTs 110 formed on the semiconductor wafer 100, and the thermal head and the N optical probe units are provided on the same support member 81.

[0062] Here, the optical probe unit 70 is required for each DUT 110. Therefore, by setting the number N to 8 or less, rather than the total number of DUTs 110 included in the semiconductor wafer 100, an increase in the number of optical probe units 70 can be suppressed. Furthermore, by setting the number N to 8 or less, the temperature of the semiconductor wafer 100 can be locally adjusted by the thermal head 60, so that the temperature adjustment of the DUT 110 can be speeded up. Note that the number N is more preferably 1 or more and 4 or less (1≦N≦4), and even more preferably 1 or more and 2 or less (1≦N≦2). Furthermore, the total number of DUTs 110 included in the semiconductor wafer 100 is a number greater than the number N.

[0063] The contact surface 62 of the thermal head may be large enough to contact all of the DUTs 110 on the semiconductor wafer 100. The number N may be the total number of DUTs 110 on the semiconductor wafer 100.

[0064] Returning to Fig. 2, the control device 90 is configured, for example, by a computer. Although not specifically shown, this computer is an electronic calculator equipped with a CPU (processor), a main memory device (RAM, etc.), an auxiliary memory device (hard disk, SSD, etc.), and an interface, etc. The control described below is functionally realized, for example, by the control device 90 executing a program. Note that the control device 90 may be configured by a circuit board instead of a computer.

[0065] 2, the control device 90 is electrically connected to the heater 65, the temperature sensor 67, and the coolant supply device 68. The control device 90 adjusts the temperature of the DUT 110 via the contact member 61 by controlling the heater 65 and the coolant supply device 68 based on the detection result of the temperature sensor 67. Note that the control device 90 may control the heater 65 and the coolant supply device 68 based on the output of a temperature detection circuit formed on the semiconductor wafer 100 instead of the temperature sensor 67. Although not particularly limited, a specific example of the temperature detection circuit may be a circuit including a thermal diode formed on the semiconductor wafer 100.

[0066] The control device 90 is also connected to the tester 10 so as to be able to transmit electrical signals. The tester 10 has a function of testing the electronic circuit of the DUT 110 and a function of testing the optical circuit of the DUT 110, and is connected to the optical fibers 72a and 72b of the optical probe 71 so as to be able to transmit optical signals. The function of testing the optical circuit of the DUT 110 includes a function of measuring the light source and the intensity of light. Furthermore, the control device 90 is connected to the first to third moving devices 74, 50, and 80 so as to be able to output control signals, and is able to control the operation of the moving devices 74, 50, and 80. Note that the tester 10 does not need to have a function of testing the optical circuit of the DUT 110. In this case, an external measuring device having a function of testing the optical circuit of the DUT 110 is connected to the optical fibers 72a and 72b of the optical probe 71 so as to be able to transmit optical signals. This external measuring device is a test device independent of the tester 10, and is electrically connected to the tester 10, for example.

[0067] 7(a) to 7(c), a method for pressing the semiconductor wafer 100 against the probe card 20 by the above-mentioned prober 30 will be described below. Figures 7(a) to 7(c) are cross-sectional views showing a method for pressing the semiconductor wafer 100 against the probe card 20 by the prober 30 in this embodiment.

[0068] 7(a), the second moving device 50 moves the holding member 40, and the semiconductor wafer 100 held by the holding member 40 faces the probe card 20. At this time, the position of the holding member 40 is finely adjusted by the second moving device 50, and the semiconductor wafer 100 is positioned with respect to the probe card 20 so that the multiple terminals 111 of the DUT 110 face the multiple probes 23 of the probe head 22, respectively.

[0069] The relative positional relationship between the terminals 111 of the semiconductor wafer 100 and the probes 23 of the probe card 20 is recognized in advance, for example, by cameras 91 and 92 (see FIG. 1) and an image processing function of the control device 90. Specifically, the cameras 91 and 92 are movable by a moving device (not shown). The camera 91 captures an image of the probe card 20, and another camera 92 captures an image of the semiconductor wafer 100 held by the holding member 40. Based on these images, the image processing function of the control device 90 recognizes the relative positional relationship between the terminals 111 and the probes 23. Although not shown, the semiconductor wafer 100 is supplied to the holding member 40 by a transport arm from a cassette such as a FOUP (Front-Opening Unified Pod).

[0070] 7(b), the third moving device 80 raises the thermal head 60 and the optical probe unit 70, and brings the thermal head 60 into contact with the semiconductor wafer 100 held by the holding member 40. At this time, since the outer periphery of the semiconductor wafer 100 is held by the holding member 40, the contact surface 62 of the thermal head 60 comes into direct contact with an exposed portion of the underside 102 of the semiconductor wafer 100 that is more inward than the outer periphery. Once the thermal head 60 comes into contact with the semiconductor wafer 100, the control device 90 starts controlling the heater 65 and the coolant supply device 68 to adjust the temperature of the DUT 110.

[0071] 7(c), while maintaining the contact state between the thermal head 60 and the semiconductor wafer 100, the second moving device 50 raises the holding member 40, and the third moving device 80 raises the thermal head 60 and the optical probe unit 70, pressing the semiconductor wafer 100 against the probe card 20 to electrically connect them. In this state, the multiple terminals 111 of the DUT 110 and the multiple probes 23 of the probe card 20 are in contact with each other.

[0072] Next, the first moving device 74 finely adjusts the position of the optical probe 71 to position the tip of the optical probe 71 with respect to the optical connection portion 112 of the semiconductor wafer 100. Although not particularly limited, the relative positional relationship between the optical probe 71 and the optical connection portion 112 is recognized based on the intensity of the light output from the optical connection portion 112, for example.

[0073] Specifically, light output from a light source included in the tester 10 is irradiated from one optical fiber 72a of the optical probe 71 toward the underside 102 of the semiconductor wafer 100 including the optical connection portion 112. Then, light output from the optical connection portion 112 via a loopback circuit incorporated in the optical circuit of the DUT 110 is acquired by the other optical fiber 72b. While performing this operation, the first moving device 74 causes the optical probe 71 to scan along the underside 102 of the semiconductor wafer 100. Then, the tester 10 measures the intensity of the light output from the optical connection portion 112, and the control device 90 stops the movement of the optical probe 71 at a position where the intensity of the light becomes equal to or greater than a predetermined value, thereby positioning the optical probe 71 relative to the optical connection portion 112.

[0074] Incidentally, like the relative positional relationship between the terminal 111 of the semiconductor wafer 100 and the probe 23 of the probe card 20 described above, the relative positional relationship between the optical probe 71 and the optical connection portion 112 may be recognized by a camera and image processing. In this case, before the thermal head 60 is brought into contact with the semiconductor wafer 100 held by the holding member 40, the semiconductor wafer 100 is imaged from below by a camera, and the thermal head 60 is imaged from above by another camera, and based on these images, the relative positional relationship between the optical probe 71 and the optical connection portion 112 is recognized by the image processing function of the control device 90. Alternatively, the positioning of the optical probe 71 with respect to the optical connection portion 112 may be performed by rough positioning using image processing, and then precise positioning using light intensity.

[0075] The optical probe 71 may be positioned relative to the optical connection portion 112 in a state in which the thermal head 60 is in contact with the semiconductor wafer 100 held by the holding member 40 (the state shown in FIG. 7(b)). That is, the optical probe 71 may be positioned relative to the optical connection portion 112 before the semiconductor wafer 100 and the probe card 20 are electrically connected to each other.

[0076] Next, the tester 10 inputs an electrical signal to the DUT 110 via the electrical probe 23 and the terminal 111, and also inputs an optical signal to the DUT 110 via the optical probe 71 and the optical connection unit 112. The tester 10 then judges the quality and characteristics of the DUT 110 based on the electrical signal output from the DUT 110 via the terminal 111 and the electrical probe 23, and the optical signal output from the DUT 110 via the optical connection unit 112 and the optical probe 71.

[0077] As described above, in this embodiment, the optical probe 71 can input and output optical signals to and from the optical connection portion 112 arranged on the lower surface 102 of the semiconductor wafer 100, making it possible to test the DUT 110 that includes an electronic circuit and an optical circuit. In particular, in this embodiment, it becomes possible to test the DUT 110 that has the terminal 111 arranged on one surface 101 of the semiconductor wafer 100 and the optical connection portion 112 arranged on the other surface 102 of the semiconductor wafer 100.

[0078] In addition, in this embodiment, the prober 30 includes a first moving device 74 that moves the optical probe 71, independent of the second moving device 50 that positions the semiconductor wafer 100 relative to the probe card 20. Therefore, the optical probe 51 can be positioned relatively to the optical connection portion 112 of the DUT 110 while the semiconductor wafer 100 is held by the holding member 40. Even if the positioning accuracy of the optical probe 71 relative to the optical connection portion 112 is higher than the positioning accuracy of the electric probe 23 relative to the terminal 111, the optical probe 71 can be positioned with high accuracy relative to the optical connection portion 112 by the first moving device 74.

[0079] The above-described embodiments are described to facilitate understanding of the present invention, and are not described to limit the present invention. Therefore, each element disclosed in the above embodiments is intended to include all design modifications and equivalents that fall within the technical scope of the present invention.

[0080] For example, as shown in Fig. 8, the semiconductor wafer test system 1 may be configured to test the semiconductor wafer 100 in a vertical position opposite to that of the embodiment described above. Fig. 8 is a diagram showing the overall configuration of a semiconductor wafer test system and the internal structure of a prober in still another embodiment of the present invention.

[0081] In this case, as shown in Fig. 8, the annular holding portion 41 of the holding member 40 holds the lower surface (first surface) 101 of the semiconductor wafer 100. The upper surface (second surface) 102 of the semiconductor wafer 100 faces upward, and the entire upper surface 102 is exposed. The probe card 20 is disposed below the holding member 40 with the probes 23 facing upward, and the second moving device 80 is disposed above the holding member 40 with the contact surface 62 of the thermal head 60 and the optical axis of the optical probe unit 70 facing downward. That is, in the embodiment shown in Fig. 8, all the configurations except for the holding member 40 are inverted from the above-mentioned embodiment. [Explanation of symbols]

[0082] 1. Semiconductor wafer test system 10…Tester 11...Test head 12…Mainframe 20...Probe card 21...Wiring board 22…Probe head 23…Probe 24. Housing 30…Prober 31…Upper base 32…Aperture 33…Lower base 40...Retaining member 41...Holding part 42...Aperture 50...Second moving device 60, 60B, 60C...Thermal head 61...Contact member 62…Contact surface 63...Groove 64…Insertion hole 65…Heater 66...Flow path 67...Temperature sensor 68... Refrigerant supply device 70, 70B...Optical probe unit 71...Optical probe 72...Optical fiber 73…Mirror 74...First moving device 80...Third moving device 81...Support member 82...Lifting mechanism 90...Control device 91,92…Camera 100...Semiconductor wafer 101…Top surface 102…Bottom surface 110…DUT 111...Terminal 112...Optical connection part

Claims

1. A semiconductor wafer handling device that moves a semiconductor wafer on which a DUT is formed, and presses a terminal of the DUT arranged on a first surface of the semiconductor wafer against a contact of a probe card, The semiconductor wafer handling apparatus includes an optical probe that inputs and outputs an optical signal to and from an optical connection portion of the DUT that is disposed on a second surface of the semiconductor wafer.

2. 2. The semiconductor wafer handling device according to claim 1, The semiconductor wafer handling apparatus includes a first moving device for moving the optical probe relatively to the semiconductor wafer.

3. 3. The semiconductor wafer handling device according to claim 2, The semiconductor wafer handling apparatus includes: a holding member for holding the semiconductor wafer; a second moving device that moves the holding member relative to the probe card, The first moving device is a semiconductor wafer handling device that moves the optical probe relatively to the semiconductor wafer held by the holding member.

4. 4. The semiconductor wafer handling device according to claim 3, The semiconductor wafer handling apparatus includes: a contact member that contacts the second surface of the semiconductor wafer; a third moving device that moves the contact member and the first moving device relative to the semiconductor wafer held by the holding member.

5. 5. The semiconductor wafer handling device according to claim 4, The contact member is a contact surface contacting the second surface of the semiconductor wafer; a recess opening to the contact surface, The optical probe is inserted into the recess so as to be movable relative to the contact member.

6. 5. The semiconductor wafer handling device according to claim 4, The contact member is a contact surface contacting the second surface of the semiconductor wafer; An insertion hole opening on the contact surface, The optical probe is inserted into the insertion hole so as to be movable relative to the contact member.

7. 5. The semiconductor wafer handling device according to claim 4, the third moving device includes a support member to which the contact member and the first moving device are fixed; The first moving device is a semiconductor wafer handling device that moves the optical probe relatively to the contact member.

8. 5. The semiconductor wafer handling device according to claim 4, the semiconductor wafer handling apparatus includes a control device that controls the second and third moving devices, The control device controls the second and third moving devices to bring the holding member and the contact member closer to the probe card in the direction of pressing the DUT against the probe card, thereby pressing the terminals of the DUT against the contactors of the probe card.

9. 5. The semiconductor wafer handling device according to claim 4, the contact member has a contact surface that contacts the second surface of the semiconductor wafer; the contact surface has a size capable of contacting N of the DUTs formed on the semiconductor wafer, The semiconductor wafer handling apparatus includes: N optical probes arranged to correspond to the N DUTs; N first moving devices that move the N optical probes independently of one another; The semiconductor wafer handling apparatus, wherein N is a natural number greater than or equal to 1 and less than or equal to 8.

10. 10. The semiconductor wafer handling apparatus of claim 9, The third moving device is a semiconductor wafer handling apparatus that moves the contact member and the N first moving devices relatively to the semiconductor wafer held by the holding member.

11. 4. The semiconductor wafer handling device according to claim 3, A semiconductor wafer handling device, wherein the holding member holds an outer periphery of the second or first surface of the semiconductor wafer while exposing the first and second surfaces of the semiconductor wafer.

12. 4. The semiconductor wafer handling device according to claim 3, The holding member includes an annular holding portion that holds an outer peripheral portion of the second or first surface of the semiconductor wafer.

13. 2. The semiconductor wafer handling device according to claim 1, The optical probe is an electrical semiconductor wafer handling device having an optical transmission line capable of transmitting an optical signal.

14. 2. The semiconductor wafer handling device according to claim 1, The semiconductor wafer handling device, wherein the optical connection portion includes a grating coupler.

15. 1. A semiconductor wafer test system for testing a DUT formed on a semiconductor wafer, comprising: a probe card for inputting and outputting electrical signals to terminals of the DUT arranged on a first surface of the semiconductor wafer; an optical probe for inputting and outputting an optical signal to and from an optical connection portion of the DUT disposed on a second surface of the semiconductor wafer; a test device connected to the probe card so as to be capable of transmitting the electrical signal, and connected to the optical probe so as to be capable of transmitting the optical signal; and a semiconductor wafer test system comprising:

16. 16. The semiconductor wafer testing system of claim 15, A semiconductor wafer testing system comprising the semiconductor wafer handling apparatus according to any one of claims 1 to 14.

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