WET ETCHING DEVICE CAPABLE OF AVOIDING TOP Mo INDENTATION

Abstract

To provide a wet etching device which effectively avoids the top Mo indentation problem in the Mo / Al and Mo / Al / Mo etching process, avoids the quality problems of stains and ensures the product quality and yield.SOLUTION: A wet etching device is sequentially provided with a dry zone 101, an etching zone 102, a buffer zone 103, a water washing zone 104 and an air drying zone 105 according to the transmission direction of a substrate 10. A first magnet device 16 is arranged in the etching zone and a buffer air knife 11, a second magnet device 17, a hot air port 19 and a first exhaust port 20 are arranged in the buffer zone. A contour of the buffer air knife is set in an arc shape, and a hot air pipe 21 is arranged above the buffer air knife in an inclined mode. The device further includes a vortex pipe 18, and a nozzle of the hot air pipe is opposed to the buffer air knife. A hot air branch pipe 181 of the vortex pipe is respectively communicated with the hot air port and the hot air pipe, and a cold air branch pipe 182 of the vortex pipe is communicated with a cooling device 22.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to the technical field of microelectronics processing, specifically to the top Mo indentation Avoid wet etching equipment. [Background technology]

[0002] Thin-film transistor liquid crystal displays (TFT-LCDs) are made up of a backlight and a display screen. The display screen is made up of upper and lower polarizing plates, an array substrate, a color film, and a liquid crystal. The structure and display principle of the TFT-LCD are shown in Figure 1(a). The TF on the array substrate emits light, and the light passes through the lower polarizer and reaches the array substrate. The T device is turned on to generate an electric field, which drives the deflection of the liquid crystals, which causes the light to The light is irradiated through the liquid crystal box onto the color film. The color film array is red (R), It is composed of green (G) and blue (B) subpixels, and when light is irradiated onto the subpixels, R, G , B emit monochromatic light, which passes through the upper polarizing plate and reaches the human eye, and the monochromatic light is superimposed. Finally, color display is realized. In TFT-LCD, the array substrate is technically difficult. It is the most difficult to manufacture and the most complicated process. The structure of the device is shown in Fig. 1(b). The gate, gate insulating film, and active layer are sequentially formed on the substrate. layer (a-Si), pixel electrode (1ITO), source drain (SD), passivation layer (PVX, SiNx material), and the common electrode (2ITO) process are carried out in sequence. The gate insulating layer, a-Si and SD electrode form a transistor device, and the drain of the device The drain electrode is connected to the pixel electrode (1ITO), and the electrical signal of the device is In this way, the light is transferred to the pixel electrode (1ITO). PVX covers the device and provides protection. The common electrode (2ITO) functions as a reference potential, and the pixel electrode (1ITO) and the common electrode The potential difference between the two ITO electrodes drives the deflection of the liquid crystal. The material of the Gate and SD electrodes is usually Al. After photolithography, the PAN etching solution (H3PO4, CH3COOH, H The pattern is formed by wet etching with NO3. As shown in Figure 1(c), The gate electrode is usually made of Mo / Al / Mo or Al / Mo film layers, and the SD electrode is made of Mo. A / Al / Mo film layer is typically used. The wet etching equipment and process are shown in Figure 2, where the substrate is etched from the dry zone. The material enters the equipment and passes through the etching zone, buffer zone, water washing zone, and so on. The etching process is completed through the drying zone. A chemical tank is connected via a pipe. The chemical tank contains an etching solution, and the etching The etching solution flows through the pipeline under the action of the pump into the etching zone, and finally 1The etching solution is sprayed from the spray tube, and the sprayed solution comes into contact with the Al film layer on the substrate and undergoes a chemical reaction. This generates a chemical reaction, resulting in wet etching. The chemicals are then returned to the chemical tank via the first dense gas supply. A closing door is provided and a second sealing door is provided at the exit to prevent overflow of etching vapor The first sealing door is always closed to prevent the substrate from moving from the dry zone to the etching zone. When the substrate is transferred to the etching zone, the first sealed door is opened, and the substrate is immediately inserted into the first sealed door. The door is closed and the substrate is transferred from the etching zone to the buffer zone, and the second sealing door is opened. Immediately after the substrate leaves the etching zone, the second sealing door is closed. PAN-type etching solution consists of H3PO4, CH3COOH, and HNO3. remains on the substrate and is carried to the water rinsing zone, resulting in loss of etching solution usage. To reduce the loss of etching solution, a first air curtain is installed at the exit of the etching zone. The first air curtain air knife blows air vertically. The air curtain acts as a scraper and removes the etched surface of the substrate. The substrate is then transferred to the buffer zone, where it is A buffer air knife is arranged, and the air blowing direction of the buffer air knife is at an angle with the vertical direction. No, the air blowing direction is divided into vertical downward and horizontal directions, and the vertical air blowing is done by the air car The action of the Ten Air Knife is the same, with the horizontal air blowing direction being opposite to the substrate transport direction. The etching solution that is blocked by the buffer air knife flows through the reflux pipe to the chemical tank. Enter. The substrate is then transferred to the water washing zone, where a second air curtain air knife is placed at the entrance to the water washing zone. The second air curtain air knife blows air vertically to create an air car. A barrier is formed to prevent etching vapor from the buffer zone from entering the water rinsing zone. The water knife is located at the rear end of the washing zone and is oriented vertically and It forms an angle and sprays a continuous water curtain like a waterfall, and the spray direction of the water curtain is decomposed into vertical and horizontal directions, the horizontal component being the same as the substrate transfer direction, and the water - The curtain dilutes the etching solution remaining on the substrate and promotes the flow of the remaining etching solution. After that, the substrate is continuously transferred and the high-speed mist water stream is sprayed from the second spray tube to cover the substrate. After washing with water, the substrate is transferred to the air drying zone. During this period, the substrate is air-dried and the wet etching process is finally completed. However, in wet etching of Mo / Al / Mo and Al / Mo electrodes, the top M As shown in Fig. 3(a), the Mo at the top shrinks inward and becomes Al. The reflectance of the Al and Mo metals differs, and the Al film is exposed, as shown in Figure 3(b). The reflectance of the layer is higher than that of Mo. When it comes to screen display, the difference in reflectance between Mo and Al is the This is perceived by the naked eye and is reflected as a difference in the brightness of the display screen, as shown in Figure 3(c). In the world of electronics, this is called label staining. Label staining reduces product yield and ultimately leads to waste. This leads to waste of materials and labor, and increased production costs. The cause of the top Mo indentation is mainly the evaporation of HNO3 in the etching solution and the condensation dripping. Localized etching caused by heat of dissolution of H3PO4 produced by the spray of a tar knife In the Al etching process, in order to stabilize the etching rate, The etching solution is heated to 40°C. Etching zone, buffer zone, and water washing zone All are equipped with air knives to reduce the amount of etching solution remaining in the opening, but the PAN etch The etching solution has a high viscosity and a large amount of residual etching solution remains. The more etching solution remains, the more HNO3 it contains, so HNO As shown in Figure 4(a), the substrate is transferred to the buffer zone, and the substrate The temperature of the etching solution remaining on the chamber is 40°C, and the HNO3 in the etching solution is The vapor evaporates onto the inner wall and condenses into small droplets. As the number of flow sheets increases, the buffer zone The HNO3 vapor concentration in the chamber increases, and the droplets condensed on the inner wall of the chamber gradually grow into large liquids. The droplets converge to a large HNO3-rich droplet, which falls onto the substrate under the action of gravity, and the HNO3-rich droplets at the local position of the substrate The NO3 concentration increases, accelerating the etching of that location, and the etching rate of Mo becomes faster than that of Al. As a result, the top Mo indentation occurs. The buffer air knife in the buffer zone is continuously blown, and the air pressure at that location is reduced. Therefore, the HNO3 vapor moves toward the buffer air knife and is heated by the HNO3 vapor on the buffer air knife. The droplets condense into O3-rich droplets, which fall onto the substrate under the action of gravity, which also contributes to the formation of Mo indentations. Leads to life. When the substrate is transferred to the water washing zone, the water knife is Spray a dragon-shaped water curtain to dilute the remaining etching solution and turn it into concentrated H3 When concentrated H3PO4 is diluted with water, it releases heat of dissolution and the water is sprayed. The evaporator curtain absorbs the heat of dissolution, but the amount of etching solution remaining on the substrate varies depending on the location. In areas with a large amount of residue, the heat of dissolution is large, and the heat absorption by the water curtain is insufficient. Again, the local temperature rise accelerates the etching action of the remaining etching solution, eventually Mo indentations are formed. There is still residual HNO3 volatilization in the water washing zone, and this The process involves the evaporation of water vapor. As shown in Figure 5(b) and Figure 5(c), Finally, HNO3 is condensed on the inner wall of the washing zone to form HNO3-rich droplets, and HNO3 volatilizes. Due to the concentration effect of the HNO3, the HNO3 content in the droplets is higher than that of the original etching solution, and the droplets It drips onto the substrate under the action of gravity, which also leads to Mo indentation. Currently, mass-produced wet etching equipment is used for Mo / Al / Mo and Al / Mo etching. The problem of top Mo indentation in the process cannot be effectively avoided, resulting in yield loss due to top Mo indentation In the TFT production line, it is necessary to avoid top Mo indentation. Therefore, there is an urgent need for wet etching equipment that can perform this function. Summary of the Invention

[0003] In view of this, the object of the present invention is to provide a method for preventing the formation of a tungsten oxide layer during Mo / Al, Mo / Al / Mo etching processes. It can effectively avoid the problem of Mo indentation on the surface, avoid quality problems such as display stains, and improve the quality of the product. A wet etching process that avoids top Mo indentation can be used to ensure the quality and yield of the product. The aim of the project is to provide a place for To achieve the above objectives, the present invention provides the following technical solutions: The wet etching equipment that avoids top Mo indentation uses sequential drives according to the transfer direction of the substrate. The system is equipped with a washing zone, an etching zone, a buffer zone, a water washing zone and an air drying zone in sequence. And The dry zone communicates with the etching zone through a first sealing door; A first spray pipe is provided within the etching zone for spraying an etching solution onto a surface of the substrate. The etching zone is connected to a buffer zone through a second sealing door, and the etching A first air curtain air knife is provided at the outlet of the mixing zone, and the first air curtain air knife The knife blows air vertically onto the surface of the substrate to block the etching solution on the substrate. The first air curtain air knife consists of an upper and lower air knife. And, A buffer air knife is provided within the buffer zone, and a vertical direction of the buffer air knife The included angle is generally 40 to 60 degrees, and the buffer air knife is arranged along the inclined rear. It is used to blow air onto the surface of the board to block the etching solution on the board, A second air curtain air knife is provided at the entrance of the water washing zone, and the second air curtain air The knife comprises an upper and a lower air knife, the second air curtain air knife being: Air is blown vertically to form an air curtain, etching the buffer zone It is used to prevent steam from entering the water washing zone, and is installed at the rear end of the water washing zone. A water knife is provided, and the water knife sprays a water curtain in a tilted forward direction. The etching solution remaining on the substrate is diluted by spraying water onto the surface of the substrate in the water washing zone. a second spray tube for spraying the sprayed liquid; A first magnet arrangement is further provided within the etching zone, the first magnet arrangement being coupled to a first air It is attached to the rear end of the curtain air knife to reduce the viscosity of the etching solution on the substrate. a second magnet device is further provided in the buffer zone, The device is attached to the rear end of the buffer air knife to reduce the viscosity of the etching solution on the substrate. It is used to The wet etching apparatus further includes a vortex tube, and a hot air outlet and and a first exhaust port, and the buffer air knife has an outer shape set to a circular arc, A hot air tube is provided above the inclination of the buffer air knife, and the nozzle of the hot air tube faces the buffer air knife. The hot air branch pipes of the vortex tube are connected to the hot air outlet and the hot air tube, The wet etching apparatus further includes a cooling device, and the cold air branch pipe of the vortex tube is connected to the cooling device. The cooling device is connected to the washing device, and a room temperature water pipe is further connected to the cooling device, and a supercooled water pipe of the cooling device is connected to the washing zone. It communicates with the water knife of The top of the inner wall of the chamber of the washing zone is a symmetrical inclined surface, and the angle between the inclined surface and the horizontal surface is The slope is 5 to 15°, and a PVC plate is placed on the slope. A TiO2 superhydrophilic coating is applied to the surface of the PVC plate. The TiO2 superhydrophilic coating is applied to the water washing zone, and ultraviolet light is irradiated onto the TiO2 superhydrophilic coating. An ultraviolet irradiation system is further provided. In one embodiment of the present invention, the hot air outlet and the first exhaust outlet are all located at the top of the buffer zone. The hot air port is adjacent to an etching zone, and the first exhaust port is adjacent to a water rinsing zone. In one embodiment of the present invention, a compressed air supply port and a second exhaust port are provided in the water washing zone. The compressed air supply port and the second exhaust port are arranged in the same manner so that the blowing and exhausting of air do not interfere with the spraying. The compressed air supply port is attached to one side wall at a position higher than the second spray pipe, and the compressed air supply port is connected to a baffle. The second exhaust outlet is adjacent to the air drying zone and the second exhaust outlet is adjacent to the air drying zone. In one aspect of the present invention, the first magnet device includes a first magnet slot, a top cover plate and a U-shaped magnet, the U-shaped magnet being disposed in a first magnet slot, the first magnet The top cover is filled with plastic to fix the U-shaped magnet in the stone slot. The cross section of the plate is triangular. In one embodiment of the present invention, the second magnet device includes an upper magnet and a lower magnet, and the upper magnet The upper and lower magnets are all second magnet slots, bar magnets embedded in the second magnet slots, and The magnets are arranged in a magnet holder and a top cover plate, and the direction of the magnets is parallel to the transfer direction of the substrate. The north and south poles of the upper and lower magnets are opposite in orientation. In one aspect of the present invention, the ultraviolet irradiation system includes an indoor photovoltaic cell assembly, a super- The indoor photovoltaic cell assembly, the supercapacitor, and the ultraviolet LED lamp The UV LED lamp is connected to the PLC controller via a relay for automatic adjustment and and forming a switchable control circuit. In one aspect of the present invention, the housing of the cooling device has a dome structure with a small upper part and a large lower part. The cold air branch pipe of the vortex tube is connected to the bottom of the cooling device, and the normal temperature water pipe is connected to the top of the cooling device. The diameter of the supercooled water pipe of the cooling device is 0.5 to 0.7 times the diameter of the normal temperature water pipe. The temperature of the supercooled water is controlled at 5 to 12°C. Effect of the Invention

[0004] The present invention has the following beneficial effects: 1. In this invention, special magnet devices are installed in the etching zone and the buffer zone, and the magnet The magnetic field reduces the viscosity of the etching solution, and the amount of etching solution remaining is reduced under the action of the air knife. It is possible to slightly and fundamentally reduce the amount of HNO3 volatilization and suppress the condensation of HNO3 vapor. 2. The hot gas separated from the vortex tube is fed into the buffer zone to dilute the HNO3 vapor. This reduces the concentration of HNO3 gas and suppresses condensation. At the same time, the hot gas is The bar is heated to prevent HNO3 vapor from condensing and dripping onto the chamber walls. 3. The hot gas is blown onto the arc-shaped buffer air knife, and the hot gas is blown into the wall by the wall effect. This heats the entire outer wall of the buffer air knife, and HNO3 vapor condenses on the outer wall of the buffer air knife. Shrinkage and dripping can be effectively avoided. 4. The cold air separated from the vortex tube enters the cooling device and cools the normal temperature water to form supercooled water; Supercooled water is sprayed onto the substrate through a water knife, and the heat of dissolution of H3PO4 during the washing process is This allows the top Mo indentation caused by local temperature rise to be avoided. 5. The washing zone is equipped with a compressed air inlet and an exhaust port to compress the air and achieve dilution. The concentration of HNO3 and water vapor is reduced, and the mixed gas is sucked in, forming droplets on the inner wall of the water washing zone chamber. This suppresses the risk of droplets dripping. 6. The water washing zone is further equipped with an ultraviolet irradiation system and a sloped TiO2 super-hydrophilic coating. Even if some of the HNO3 vapor and water vapor evaporates and reaches the inner wall of the chamber, the vapor and liquid No droplets are formed, thus avoiding the risk of Mo indentation. 7. The ultraviolet irradiation system uses indoor photovoltaic cell assembly function, no need to add power The lighting system includes a photovoltaic cell assembly, a supercapacitor, It is connected to the PLC via a relay, and the function is realized automatically without the need for additional manual intervention. do. By comprehensively utilizing the above technical solutions, the present invention is able to provide a wide range of Mo / Al, Mo / Al / Effectively avoids the problem of top Mo indentation during the Mo etching process, and reduces display dirt and other quality issues. It is possible to avoid quality problems and ensure product quality and yield. [Brief description of the drawings]

[0005] In order to make the objectives, technical solutions and beneficial effects of the present invention clearer, the present invention provides the following: The accompanying drawings are provided for explanation. [Figure 1] FIG. 1 is a schematic diagram of a TFT-LCD structure and a TFT device. [Diagram 2] 1 is a schematic diagram of an existing conventional wet etching apparatus. [Diagram 3] FIG. 1 shows the top Mo indentation morphology, film layer reflectance, and display stain formation mechanism of an existing conventional wet etching device. [Figure 4]Schematic diagram of the HNO3 vapor volatilization and condensation dripping process in the buffer zone of an existing conventional wet etching device. [Diagram 5] Schematic diagram of the H3PO4 dissolution heat, HNO3 vapor volatilization and condensation dripping process in the water rinsing zone of an existing conventional wet etching equipment. [Figure 6] FIG. 1 is a structural schematic diagram of a wet etching apparatus for avoiding top Mo indentation according to the present invention. [Figure 7] 2 is a schematic diagram showing the structure and principle of a first magnet device according to the present invention. FIG. [Figure 8] FIG. 2 is a schematic diagram showing the structure and principle of the second magnet device of the present invention. [Figure 9] FIG. 2 is a schematic diagram of the structure and principle of the arc-shaped buffer air knife and hot air pipe of the present invention; [Figure 10] 1 is a schematic diagram showing the structure and principle of a cooling device of the present invention; [Figure 11] FIG. 2 is a schematic diagram of the top structure of the chamber inner wall of the water washing zone of the present invention. [Figure 12] FIG. 2 is a diagram showing a control circuit for the water washing zone ultraviolet irradiation system of the present invention.

[0006] [Explanation of symbols] 1 Transfer axis 10 Substrate 101 Dry Zone 102 Etching Zone 103 Buffer Zone 104 Washing Zone 105 Air Dry Zone 2. Drug reflux pipeline 3. Chemical tank 4. Pump 5. Liquid Supply Pipeline 6 1st spray pipe 7 First airtight door 8 Second Airtight Door 9. No. 1 Air Curtain Air Knife 11 Buffer Air Knife 12 No. 2 Air Curtain Air Knife 14 Water Knife 15 Second spray pipe 16 First magnet device 161 First magnet slot 162 Top cover plate 163 U-shaped magnet 17 Second magnet device 171 Upper Magnet 172 Lower Magnet 173 Second magnet slot 174 Bar Magnet 175 Top cover plate 18 Eddy current tube 181 Hot air branch pipe 182 Cold air branch pipe 19 Hot air vent 20 First exhaust port 21 Hot air pipe 22 Cooling device 23 Room temperature water pipe 24 Supercooled water pipe 25 Compressed air supply port 26 Second exhaust port 27 TiO2 superhydrophilic coating 28 Indoor Photovoltaic Assembly 29 Supercapacitor 30 UV LED lamp 31 First liquid level sensor 32 Second liquid level sensor DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] In order to enable those skilled in the art to better understand and practice the present invention, the following description will be given with reference to the accompanying drawings and specific examples. The present invention will be further described with reference to the examples, but the examples listed are not intended to limit the invention. There is none. The term "front" in the present invention refers to the downstream side in the transfer direction of the substrate 10, and the term "rear" refers to the downstream side in the transfer direction of the substrate 10. Refers to the upstream direction. As shown in FIG. 6, in a wet etching apparatus that avoids top Mo indentation, The etching device includes a dry zone 101, an etching zone 102, and a A washing zone 102, a buffer zone 103, a water washing zone 104 and an air drying zone 105 are provided in this order. can be done. The dry zone 101 communicates with the etching zone 102 via a first sealing door 7. In the etching zone 102, a first spray nozzle is provided for spraying an etching solution onto the surface of the substrate 10. A fog pipe 6 is provided, and the etching zone 102 is connected to a buffer zone through a second sealing door 8. 103, and a first air curtain air knife 9 is provided at the outlet of the etching zone 102. a first air curtain air knife 9 including an upper and a lower air knife, The air curtain air knife 9 blows air onto the surface of the substrate 10 in a vertical direction to form a substrate. 10, and a buffer is provided in the buffer zone 103. A buffer air knife 11 is provided, and the buffer air knife 11 is arranged to guide the substrate 1 along a slanted rearward direction. 0 to blow air onto the surface of the substrate 10 to block the etching solution on the substrate 10, A second air curtain air knife 12 is provided at the entrance of the water washing zone 104. The second air curtain air knife 12 includes an upper and a lower air knife. 12 blows air vertically to form an air curtain, and the buffer zone 10 3 from entering the water rinsing zone 104, A water knife 14 is provided at the rear end of the zone 104, and the water knife 14 includes: A water curtain is sprayed along the inclined front to dilute the etching solution remaining on the substrate 10. In the water washing zone 104, a first water spraying device is provided for spraying water onto the surface of the substrate 10. Two spray tubes 15 are provided. The lower part of the etching zone 102 is connected to a chemical tank 3 via a chemical return pipeline 2. The etching solution is filled in the chemical tank 3, and the etching solution is supplied to the liquid supply tank 3 under the action of the pump 4. The gas flows through the supply pipeline 5 to the etching zone 102 and is finally sprayed from the first spray pipe 6. It is fogged. In this embodiment, the angle between the buffer air knife 11 and the vertical direction is 40 to 60°. For example, In this embodiment, the angle may be 50°, and the angle between the water knife 14 and the vertical direction is 40 to 50°. 0°, and may be, for example, 45° in this embodiment. A first magnet arrangement 16 is further provided within the etching zone 102, the first magnet arrangement 16 is attached to the rear end of the first air curtain air knife 9 to measure the etching solution on the substrate 10. In the buffer zone 103, a second magnet arrangement 17 is further provided to reduce the viscosity of the liquid. The second magnet device 17 is attached to the rear end of the buffer air knife 11. It is used to reduce the viscosity of the etching solution on the plate 10. The first magnet assembly 16 and the second magnet The magnetic field of the device 17 reduces the viscosity of the etching solution, and the etching solution is then cooled under the action of the buffer air knife 11. Reduces the amount of etching solution remaining, fundamentally reduces the amount of HNO3 volatilization, and suppresses the condensation of HNO3 vapor. Control. As shown in FIG. 7(a) and FIG. 7(b), the first magnet device 16 has a first magnet slot 161 1, a top cover plate 162 and a U-shaped magnet 163. 63 is disposed within the first magnet slot 161, and within the first magnet slot 161, a U-shaped The top cover plate 162 is filled with plastic to secure the magnets 163. The cross section of the first magnet device 16 is triangular. The function of the first magnet device 16 is to move the magnet from the north pole to the The magnetization lines coming out of the substrate return to the south pole, and the etching solution on the substrate 10 is subjected to the effect of the magnetic field, causing the viscosity to decrease. The amount of remaining etching liquid is reduced under the action of the first air curtain air knife 9. The slot 161 is made of stainless steel with a resin-coated surface. The resin covering the surface is acid-resistant and provides protection. Plate 162 is made of acid-resistant PVC material, its cross section is triangular, and the etching solution The top cover plate 162 is rubber-covered around the periphery, and the U-shaped magnet 16 The surface of 3 is covered with resin or rubber to provide protection. As shown in FIG. 8, the second magnet device 17 includes an upper magnet 171 and a lower magnet 172. The upper magnet 171 and the lower magnet 172 are both in the second magnet slot 173 and the second magnet slot 1 73 and a top cover plate 175. The bar direction of the magnet 174 is parallel to the transfer direction of the substrate 10. The north and south poles of the stone 172 are opposite to each other. The magnetic field of the second magnet device 17 is opposite in direction, and a magnetic field of the opposite direction is formed in the vertical direction. Under its action, the viscosity of the remaining etching solution is further reduced. The wet etching apparatus further includes a vortex tube 18 for absorbing heat in the buffer zone 103. A hot air outlet 19 and a first exhaust outlet 20 are further provided. Located at the top of the buffer zone 103, the hot air outlet 19 is adjacent to the etching zone 103. The first exhaust port 20 is adjacent to the water washing zone 104 and is located outside the buffer air knife 11. The shape is set to be a circular arc, and a hot air pipe 21 is provided above the inclination of the buffer air knife 11. The nozzle of the air duct 21 faces the buffer air knife 11, and the hot air branch duct 18 of the vortex tube 18 1 communicates with the hot air outlet 19 and the hot air tube 21, respectively. Gas is fed into the buffer zone 103 to dilute the HNO3 vapor and reduce the HNO3 gas concentration. At the same time, the hot gas heats the section chamber and HNO3 vapor The hot gas is prevented from condensing and dripping onto the inner wall of the chamber. The hot gas is blown into the buffer air knife 11 through the wall effect. The entire outer wall can be heated (as shown in Figure 9), and HNO3 vapor is fed to the buffer air knife 11 Condensation and dripping on the outer wall can be effectively avoided. The wet etching apparatus further includes a cooling device 22, and the cold air branch of the vortex tube 18 The pipe 182 is connected to the cooling device 22, and the room temperature water pipe 23 is further connected to the cooling device 22. The subcooled water pipe 24 of the device 22 communicates with the water knife 14 of the water washing zone 104. The cold air separated from the tube 18 enters the cooling device 22 and cools the room temperature water to form supercooled water; Supercooled water is sprayed onto the substrate through the water knife 14 to dissolve the H3PO4 during the washing process. It can fully absorb the heat dissipation and avoid the top Mo indentation caused by the local temperature rise. As shown in FIG. 10, the housing of the cooling device 22 is a dome-shaped housing having a small upper part and a large lower part. The cold air branch pipe 182 of the vortex tube 18 is connected to the bottom of the cooling device 22, and room temperature water is The pipe 23 is connected to the top of the cooling device 22, and the diameter of the supercooled water pipe 24 of the cooling device 22 is the same as that of the normal temperature water pipe. The diameter of the pipe is 0.5 to 0.7 times that of the pipe 23, and the temperature of the supercooled water is controlled at 5 to 12°C. The cold air in the tube 18 is sprayed from a capillary nozzle at the bottom of the cooling device 22 and gradually moves upward. During the upward movement of the gas, the space gradually becomes narrower, and the concentration of cold bubbles in the water gradually increases. That is, the heat exchange efficiency of the cold air and water gradually increases, and after completing the heat exchange of the cold air, the pipe The temperature of the water cooled by the cooling device 22 is controlled to 5 to 12 degrees Celsius. The cooling device 22 is provided with liquid level sensors 31 and 32. The sensor 31 is disposed below the sensor 32. When the liquid level is at the position of the sensor 31, When the pump speed remains stable and the liquid level reaches the sensor 32, the pump speed The liquid discharge flow rate increases, the liquid level drops, and the liquid level becomes slightly lower than the position of the sensor 31. When the temperature drops too low, the pump speed decreases and the liquid level rises. A compressed air supply port 25 and a second exhaust port 26 are provided in the water washing zone 104. The compressed air supply port 25 and the exhaust port 26 are attached to the same side wall, and the attachment position is the same as that of the second spray pipe 1. 5, the compressed air supply port 25 is adjacent to the buffer zone 103, and the second exhaust The port 26 is adjacent to the air drying zone 105. The compressed air acts as a dilution agent, and the HNO3 and water vapor The concentration of the gas is reduced to extract the mixed gas, and the gas is dropped onto the inner wall of the chamber in the water washing zone 104. This suppresses the formation of droplets and reduces the risk of droplets dripping. As shown in FIG. 11, the top of the inner wall of the washing zone 104 chamber is a symmetrical inclined surface. The angle between the inclined surface and the horizontal surface is 5 to 15 degrees, and a PVC plate is placed on the inclined surface. The surface of the water-washing zone 104 is coated with a TiO2 superhydrophilic coating 27. An ultraviolet irradiation system for irradiating the superhydrophilic coating 27 with ultraviolet light is further provided. The UV irradiation system is always in operation, emitting UV light to coat the TiO2 superhydrophilic coating. By irradiating the TiO2 superhydrophilic coating 27 with HNO 3. Steam and water vapor do not form droplets on the TiO2 superhydrophilic coating27, but spread to form a liquid film. The powder is then discharged under the action of gravity along the inclined coating. As shown in FIGS. 11 and 12, the ultraviolet irradiation system includes an indoor photovoltaic cell assembly 28. , a supercapacitor 29 and an ultraviolet LED lamp 30, The assembly 28, the supercapacitor 29, and the UV LED lamp 30 are connected to the P Connected to the LC controller to form an auto-adjustable and switchable control circuit. The indoor photovoltaic cell assembly 28 includes a capacitor A and a capacitor B. Capacitor A is charged, and capacitor B supplies power to the LED lamp 30. After a certain time, Capacitor A powers the LED lamp 30, and the indoor photovoltaic assembly 28 is connected to capacitor B is charged and switched in a circular manner so that the LED lamp 30 is always in operation. As a result, the TiO2 superhydrophilic coating 27 is always in a superhydrophilic state. In addition, the electrical products used in the present invention, such as indoor photovoltaic cell assemblies 28, supercapacitors, Bottom 29, UV LED lamp 30, relay, PLC controller, pump 4, 1st liquid level The sensor 31, the second liquid level sensor 32, etc. are all prior art products, and no particular limitation is made here. The present invention is not limited to the above, and those skilled in the art can make the necessary modifications as long as they can realize the technical solutions of the present invention. You can select it by yourself. The above-mentioned embodiments are merely preferred embodiments enumerated in order to fully explain the present invention. The scope of protection of the invention is not limited thereto. Those skilled in the art can easily understand the equivalent replacement or the like made based on the present invention. The scope of protection of the present invention is as set forth in the claims. This shall be followed.

Claims

1. According to the transfer direction of the substrate (10), the dry zone (101), the etching zone (102) ), a buffer zone (103), a water washing zone (104) and an air drying zone (105) in this order. Next, The dry zone (101) is connected to the etching zone (102) through a first sealing door (7). Connected, In the etching zone (102), a gas is sprayed onto the surface of the substrate (10) to spray an etching solution. The etching zone (102) is closed by a second sealing door (8). and communicates with the buffer zone (103) via the etching zone (102). A first air curtain air knife (9) is provided, and the first air curtain air knife (9) The etching on the substrate (10) is performed by blowing air on the surface of the substrate (10) in a vertical direction. It is used to cut off the liquid, the first air curtain air knife (9) is the upper and lower air It consists of a knife, A buffer air knife (11) is provided within the buffer zone (103), and the buffer The air knife (11) blows air onto the surface of the substrate (10) along a slanted rearward direction to remove the substrate. (10) is used to block the etching solution on the A second air curtain air knife (12) is provided at the entrance of the water washing zone (104), The two air curtain air knives (12) are composed of upper and lower air knives, The air curtain air knife (12) blows air vertically to create an air curtain. The etching vapor from the buffer zone (103) enters the water washing zone (104). The water knife (104) is used to prevent the water from being washed out. The water knife (14) is provided, and the water curtain is sprayed forward in an inclined direction. The etching solution remaining on the substrate (10) is diluted by spraying the water into the water washing zone (104). A top Mo pressure vessel is provided with a second spray pipe (15) for spraying water onto the surface of the substrate (10). A wet etching apparatus for avoiding marks, comprising: A first magnet arrangement (16) is further provided within the etching zone (102), The first magnet device (16) is attached to the rear end of the first air curtain air knife (9) and is fixed to the substrate ( 10) to reduce the viscosity of the etching solution on said buffer zone (10) 3), a second magnet arrangement (17) is further provided, said second magnet arrangement (17) being a buffer It is attached to the rear end of the air knife (11) to reduce the viscosity of the etching solution on the substrate (10). It is used to The wet etching apparatus further includes a vortex tube (18), and the buffer zone (1 A hot air outlet (19) and a first exhaust outlet (20) are provided in the buffer air nib (03). The outer shape of the buffer air knife (11) is set to be arcuate, and a hot air tube is placed above the inclination of the buffer air knife (11). (21) is provided, the nozzle of the hot air pipe (21) faces the buffer air knife (11), The hot air branch pipe (181) of the vortex tube (18) is connected to the hot air outlet (19) and the hot air tube (2 1) in communication with The wet etching apparatus further includes a cooling device (22) for cooling the vortex tube (18). The air branch pipe (182) is connected to the cooling device (22) and the room temperature water pipe (23) is connected to the cooling device (22). The cooling device (22) is further connected to the supercooled water pipe (24) of the water washing zone (104). communicates with the water knife (14); The top of the chamber inner wall of the water washing zone (104) is a symmetrical slope, and the slope and the water The included angle of the plane is 5 to 15°, a PVC plate is placed on the inclined plane, and TiO ２ A superhydrophilic coating (27) is applied and TiO ２ super parent An ultraviolet irradiation system is further provided for irradiating the water coating (27) with ultraviolet light. A wet etching apparatus that avoids top Mo indentation.

2. The hot air outlet (19) and the first exhaust outlet (20) are all located at the top of the buffer zone (103). The hot air outlet (19) is located close to the etching zone (102), and the first exhaust outlet (2 0) is adjacent to the water washing zone (104). Wet etching to avoid indentations.

3. A compressed air supply port (25) and a second exhaust port (26) are provided in the water washing zone (104). The compressed air supply port (25) is adjacent to a buffer zone (103), and the second exhaust The top of claim 1, wherein the opening (26) is adjacent to an air drying zone (105). A wet etching device that avoids Mo indentations.

4. The first magnet device (16) includes a first magnet slot (161), a top cover plate (1 62) and a U-shaped magnet (163), said U-shaped magnet (163) being fitted into a first magnet slot A U-shaped magnet (163) is disposed in the first magnet slot (161). The top cover plate (162) is filled with plastic to fix the The top Mo webbing of claim 1 is triangular. Etching equipment.

5. The second magnet device (17) includes an upper magnet (171) and a lower magnet (172). The upper magnet (171) and the lower magnet (172) are all connected to the second magnet slot (173), the second magnet A bar magnet (174) embedded in the slot (173) and a top cover plate ( 175), and the rod direction of the rod magnet (174) is parallel to the transfer direction of the substrate (10). The north and south poles of the upper magnet (171) and the lower magnet (172) are opposite to each other. The wet etching apparatus for avoiding top Mo indentation according to claim 1 .

6. The ultraviolet irradiation system includes an indoor photovoltaic cell assembly (28), a supercapacitor (29 ) and an ultraviolet LED lamp (30), The par capacitor (29) and the UV LED lamp (30) are connected to the PLC controller via a relay. and a control circuit for automatically adjusting and switching the voltage. Item 1. A wet etching apparatus for avoiding top Mo indentation.

7. The housing of the cooling device (22) has a dome structure with a small upper part and a large lower part, The cold air branch pipe (182) of the vortex tube (18) is connected to the bottom of the cooling device (22), and the normal temperature water pipe ( 23) communicates with the top of the cooling device (22) and is connected to the supercooled water pipe (24) of the cooling device (22). The diameter is 0.5 to 0.7 times the diameter of the normal temperature water pipe (23), and the temperature of the supercooled water is 5 to 12 degrees Celsius. The wet etching method of claim 1, characterized in that the top Mo indentation is avoided. Switching device.

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