Electro-optical device and electronic apparatus

Abstract

To provide an electro-optical device and an electronic apparatus that improve curability of a seal member.SOLUTION: A liquid crystal device 300 comprises: a transistor 1; a pixel electrode 10 electrically connected with the transistor 1 via a contact hole 23; a contact plug 21 provided in the contact hole 23; a seal member 8 having photo-curability and thermosetting properties; and a light absorption member 151 located at a position overlapping the seal member 8 in plan view and including the same material as the contact plug 21.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to an electro-optical device and an electronic device including the electro-optical device. [Background technology]

[0002] Patent document 1 describes an electro-optical device having a pixel electrode formed on a substrate body of an element substrate, a switching element formed between the pixel electrode and the substrate, and a lens formed between the pixel electrode and the switching element. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-139252 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, the electro-optical device described in Patent Document 1 has a problem that it is difficult to improve the hardening property of the sealant for sealing the liquid crystal. More specifically, a light-hardening or light-hardening and heat-hardening sealant is used to seal the liquid crystal. When hardening the sealant by light and heat, it is difficult to heat only the sealant, and the liquid crystal is also easily heated. When the viscosity of the liquid crystal is reduced by heat, components may dissolve into the liquid crystal from the sealant that has not yet been hardened, resulting in display defects and other problems. Therefore, it is necessary to first proceed with hardening by light alone or to gradually heat the sealant, which increases the time required for hardening the sealant. In other words, an electro-optical device that improves the hardening property of the sealant is required. [Means for solving the problem]

[0005] The electro-optical device is characterized by comprising a transistor, a pixel electrode electrically connected to the transistor via a contact hole, a connecting member provided within the contact hole, a sealing member having photocurable and thermosetting properties, and a light absorbing member containing the same material as the connecting member at a position overlapping the sealing member in a planar view.

[0006] An electronic device includes the electro-optical device described above. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view of a liquid crystal device as an electro-optical device according to a first embodiment. [Diagram 2] FIG. 2 is a cross-sectional view of the liquid crystal device taken along line II-II in FIG. [Diagram 3] FIG. 2 is an equivalent circuit diagram showing an electrical configuration of an element substrate. [Figure 4] FIG. 2 is an explanatory diagram showing a cross-sectional structure of a display area of ​​an element substrate. [Diagram 5] FIG. 2 is a plan view showing a part of a display area of ​​an element substrate. [Figure 6] FIG. 4 is a cross-sectional view showing the arrangement of a light absorbing member. [Figure 7] FIG. 4 is a cross-sectional view showing the arrangement of a light absorbing member. [Figure 8] Schematic diagrams showing a manufacturing process of an optical functional layer. [Figure 9] Schematic diagrams showing a manufacturing process of an optical functional layer. [Figure 10] Schematic diagrams showing a manufacturing process of an optical functional layer. [Figure 11] Schematic diagrams showing a manufacturing process of an optical functional layer. [Figure 12] Schematic diagrams showing a manufacturing process of an optical functional layer. [Figure 13] 5A to 5C are schematic diagrams showing a manufacturing process of a sealing area when no optical function layer is provided in the sealing area. [Figure 14] 5A to 5C are schematic diagrams showing a manufacturing process of a sealing area when no optical function layer is provided in the sealing area. [Figure 15]5A to 5C are schematic diagrams showing a manufacturing process of a sealing area when no optical function layer is provided in the sealing area. [Figure 16] 5A to 5C are schematic diagrams showing a manufacturing process of a sealing area when no optical function layer is provided in the sealing area. [Figure 17] 2 is a schematic plan view showing the form of a light absorbing member in a region S1 of FIG. 1; [Figure 18] FIG. 11 is a schematic plan view showing another embodiment of the light absorbing member. [Figure 19] FIG. 11 is a schematic plan view showing another embodiment of the light absorbing member. [Figure 20] FIG. 11 is a schematic plan view showing another embodiment of the light absorbing member. [Figure 21] 5A to 5C are schematic cross-sectional views showing a state in which light is incident during a curing process of the seal member. [Figure 22] FIG. 11 is a cross-sectional view showing the arrangement of a light absorbing member according to the second embodiment. [Diagram 23] FIG. 13 is a schematic diagram showing the arrangement of a light-transmitting layer, a lens layer, and the like in the case where an optical function layer is not provided in the sealing region. [Figure 24] 5A to 5C are schematic cross-sectional views showing a state in which light is incident during a curing process of the seal member. [Diagram 25] FIG. 11 is a schematic diagram showing an example of an electronic device according to a third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings, the dimensions of some components may be shown on different scales in order to make the components easier to see.

[0009] For ease of explanation, the mutually orthogonal X-axis, Y-axis, and Z-axis will be appropriately used in the explanation. Furthermore, one direction along the X-axis will be denoted as the X1 direction, and the direction opposite to the X1 direction will be denoted as the X2 direction. Similarly, one direction along the Y-axis will be denoted as the Y1 direction, and the direction opposite to the Y1 direction will be denoted as the Y2 direction. One direction along the Z-axis will be denoted as the Z1 direction, and the direction opposite to the Z1 direction will be denoted as the Z2 direction. Furthermore, hereinafter, a view in the Z1 or Z2 direction will be referred to as a "planar view," and a view from a direction perpendicular to a cross section including the Z-axis will be referred to as a "cross-sectional view."

[0010] Furthermore, in the following description, for example, the term "on the substrate" refers to a substrate that is disposed in contact with the substrate, that is disposed on the substrate via another structure, or that is disposed partially in contact with the substrate and partially disposed via another structure. Furthermore, the term "top surface" of a certain structure refers to the surface of the structure on the Z1 direction side, for example, "top surface of a light-transmitting layer" refers to the surface of the light-transmitting layer on the Z1 direction side. Furthermore, the term "bottom surface" of a certain structure refers to the surface of the structure on the Z2 direction side, for example, "bottom surface of a contact plug" refers to the surface of a contact plug on the Z2 direction side.

[0011] 1. Embodiment 1 In this embodiment, an active drive type liquid crystal device having a thin film transistor (TFT) as a switching element for each pixel is exemplified as the electro-optical device. The liquid crystal device is used, for example, as a light modulation device of a projection display device, which is an electronic device to be described later.

[0012] 1.1. Overview of the structure of the liquid crystal device The structure of a liquid crystal device 300 as an electro-optical device according to this embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a plan view showing a schematic planar configuration of the liquid crystal device 300 according to embodiment 1. Fig. 2 is a cross-sectional view showing a schematic cross-sectional configuration of the liquid crystal device 300 taken along line II-II in Fig. 1.

[0013] 1 and 2, a liquid crystal device 300 includes a light-transmitting element substrate 100, a light-transmitting counter substrate 200, a frame-shaped seal member 8, and a liquid crystal layer Lc. Note that "light-transmitting" refers to transparency to visible light, and preferably refers to a visible light transmittance of 50% or more.

[0014] The liquid crystal device 300 has a display area A1 for displaying an image, and an outer area A2 located outside the display area A1 in a plan view. A plurality of pixels P arranged in a matrix are provided in the display area A1. Note that although the shape of the liquid crystal device 300 shown in FIG. 1 is rectangular, it may also be, for example, circular.

[0015] As shown in FIG. 2, the element substrate 100 and the counter substrate 200 are disposed with a liquid crystal layer Lc therebetween. In this embodiment, the counter substrate 200 is disposed on the light incident side of the liquid crystal layer Lc, and the element substrate 100 is disposed on the light exit side of the liquid crystal layer Lc. Incident light IL incident on the counter substrate 200 is modulated by the liquid crystal layer Lc and is emitted from the element substrate 100 as modulated light ML.

[0016] The element substrate 100 has a base 90, a plurality of interlayer insulating layers including an interlayer insulating layer 82, a pixel electrode 10, and an alignment film 12. Although not shown, a lens layer 34, which will be described later, is provided between the pixel electrode 10 and the interlayer insulating layer 82.

[0017] The substrate 90 is a flat plate having optical transparency and insulating properties. The substrate 90 is, for example, a glass substrate or a quartz substrate. A transistor 1, which will be described later, is disposed between the multiple interlayer insulating layers.

[0018] The pixel electrode 10 is translucent. The pixel electrode 10 includes a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or fluorine-doped tin oxide (FTO). The liquid crystal device 300 employs ITO as the transparent conductive material.

[0019] The thickness direction of the pixel electrode 10 coincides with the Z1 direction or the Z2 direction. The alignment film 12 has light-transmitting and insulating properties. The alignment film 12 aligns the liquid crystal molecules of the liquid crystal layer Lc. Examples of materials for the alignment film 12 include silicon oxide and polyimide.

[0020] The counter substrate 200 is a substrate disposed opposite to the element substrate 100. The counter substrate 200 includes a base 210, an insulating layer 220, a common electrode 230, and an alignment film 240.

[0021] The substrate 210 is a flat plate having translucency and insulating properties. The substrate 210 is, for example, a glass substrate or a quartz substrate. The insulating layer 220 has translucency and insulating properties. The material of the insulating layer 220 is, for example, an inorganic material such as silicon oxide. The common electrode 230 is an electrode disposed opposite the multiple pixel electrodes 10, and can be called a counter electrode. The common electrode 230 includes, for example, a transparent conductive material such as ITO, IZO, and FTO. The common electrode 230 and the pixel electrodes 10 apply an electric field to the liquid crystal layer Lc. The alignment film 240 has translucency and insulating properties.

[0022] The sealing member 8 is disposed between the element substrate 100 and the opposing substrate 200. The sealing member 8 has a thermosetting property and a photosetting property against light such as ultraviolet light, and is formed by curing various curable resins such as epoxy resin. The sealing member 8 may include a gap material made of an inorganic material such as glass.

[0023] The liquid crystal layer Lc is disposed within an area surrounded by the element substrate 100, the counter substrate 200, and the seal member 8. The liquid crystal layer Lc is disposed in a layer between the plurality of pixel electrodes 10 and the common electrode 230. The liquid crystal layer Lc is an electro-optical layer whose optical characteristics change in response to an electric field. The liquid crystal layer Lc contains liquid crystal molecules having positive or negative dielectric anisotropy. The orientation of the liquid crystal molecules changes in response to an electric field applied to the liquid crystal layer Lc. The liquid crystal layer Lc modulates the incident light IL in response to the applied electric field.

[0024] 1, a plurality of scanning line driving circuits 6, a data line driving circuit 7, and a plurality of external terminals 9 are arranged in an outer region A2 of the element substrate 100. Some of the plurality of external terminals 9 are connected to the scanning line driving circuit 6 or the data line driving circuit 7 via wiring (not shown). The plurality of external terminals 9 includes a terminal to which a common potential is applied from the outside. The rectangular region S1 surrounded by a two-dot chain line will be described later.

[0025] A scanning line driving circuit 6 and a data line driving circuit 7 are provided along the inner edge of the sealing member 8 as driving circuits. The scanning line driving circuit 6 is aligned along the Y axis, and the data line driving circuit 7 is aligned along the X axis. Although not shown, a light-shielding layer is provided inside the sealing member 8 so as to overlap the scanning line driving circuit 6 and the data line driving circuit 7 in a plan view. The light-shielding layer is provided on the counter substrate 200, and reduces light that is incident mainly from the Z1 direction on the scanning line driving circuit 6, the data line driving circuit 7, and associated wirings.

[0026] 1.2.Electrical configuration of the element substrate Fig. 3 is an equivalent circuit diagram showing the electrical configuration of the element substrate 100. As shown in Fig. 3, a display area A1 of the element substrate 100 is provided with a plurality of transistors 1 as switching elements, n scanning lines 3, m data lines 4, and n capacitance lines 5. n and m are each an integer of 2 or more. The transistors 1 are arranged corresponding to each intersection of the n scanning lines 3 and the m data lines 4.

[0027] Each of the n scanning lines 3 extends in the X1 direction, and the n scanning lines 3 are arranged at equal intervals in the Y1 direction. Each of the n scanning lines 3 is electrically connected to the gate electrodes of the corresponding transistors 1. The n scanning lines 3 are electrically connected to a scanning line driving circuit 6 shown in Fig. 1. As shown in Fig. 3, scanning signals G1, G2, ..., and Gn are supplied line-sequentially to the 1st to nth scanning lines 3 from the scanning line driving circuit 6.

[0028] Each of the m data lines 4 extends in the Y1 direction, and the m data lines 4 are arranged at equal intervals in the X1 direction. Each of the m data lines 4 is electrically connected to the source regions of the corresponding transistors 1. The m data lines 4 are electrically connected to a data line driving circuit 7 shown in Fig. 1. As shown in Fig. 3, image signals E1, E2, ..., and Em are supplied in parallel to the 1 to m data lines 4 from the data line driving circuit 7.

[0029] The n scanning lines 3 and m data lines 4 are electrically insulated from each other and arranged in a lattice pattern in a plan view. An area surrounded by two adjacent scanning lines 3 and two adjacent data lines 4 corresponds to a pixel P. A pixel electrode 10 is provided for each pixel P. The pixel electrode 10 is electrically connected to the drain region of the transistor 1.

[0030] Each of the n capacitance lines 5 extends in the Y1 direction, and the n capacitance lines 5 are arranged at equal intervals in the X1 direction. The n capacitance lines 5 are electrically insulated from the m data lines 4 and the n scanning lines 3, and are arranged at intervals from these. A fixed potential such as a common potential or a ground potential is applied to each capacitance line 5.

[0031] One electrode of the auxiliary capacitance 2 is electrically connected to a capacitance line 5. The other electrode of the auxiliary capacitance 2 is electrically connected to a pixel electrode 10 and holds the potential of an image signal supplied to the pixel electrode 10.

[0032] 1.3. Cross-sectional structure of the display area of ​​the element substrate 4 is an explanatory diagram showing the cross-sectional structure of the display region A1 of the element substrate 100, and shows a cross-sectional structure of a pixel P provided in the display region A1. As shown in Fig. 4, in the display region A1, the element substrate 100 has a cross-sectional structure in which insulating or conductive functional layers or functional films are laminated in the Z1 direction of the base 90.

[0033] The light-shielding layer 80 is disposed between the base 90 and the interlayer insulating layer 82. The light-shielding layer 80 is formed of a conductive material having light-shielding properties. Examples of the conductive material having light-shielding properties include metals such as tungsten (W), titanium (Ti), chromium (Cr), iron (Fe) and aluminum (Al), metal nitrides and metal silicides. The light-shielding layer 80 constitutes a part of the scanning line 3. The term "light-shielding properties" refers to light-shielding properties against visible light, and preferably refers to a visible light transmittance of less than 50%, and more preferably refers to a visible light transmittance of 10% or less.

[0034] The interlayer insulating layer 82 is transparent and insulating. The interlayer insulating layer 82 is made of an inorganic material such as silicon oxide. The transistor 1 is disposed on the interlayer insulating layer 82.

[0035] The transistor 1 includes a semiconductor layer 70 having an LDD (Lightly Doped Drain) structure, a gate electrode 74, and a gate insulating layer 72.

[0036] The semiconductor layer 70 has a drain region 70d, an LDD region 70a, a channel region 70c, an LDD region 70b, and a source region 70s.

[0037] The channel region 70c is located between the source region 70s and the drain region 70d. The LDD region 70b is located between the channel region 70c and the source region 70s. The LDD region 70a is located between the channel region 70c and the drain region 70d.

[0038] The semiconductor layer 70 is, for example, polysilicon. The semiconductor layer 70 is doped with impurities to enhance conductivity except for the channel region 70c. The impurity concentrations in the LDD region 70b and the LDD region 70a are lower than the impurity concentrations in the source region 70s and the drain region 70d.

[0039] A gate electrode 74 is provided on the semiconductor layer 70 via a gate insulating layer 72. The gate electrode 74 overlaps a channel region 70c of the semiconductor layer 70. The gate electrode 74 is formed, for example, by doping polysilicon with an impurity that enhances electrical conductivity. The gate electrode 74 may be formed of a material having electrical conductivity, such as a metal, a metal silicide, or a metal compound.

[0040] The gate insulating layer 72 is made of silicon oxide formed by, for example, thermal oxidation or a CVD (chemical vapor deposition) method. The gate electrode 74 and the light-shielding layer 80 are electrically connected to each other via a contact hole 81 that penetrates the gate insulating layer 72 and the interlayer insulating layer 82.

[0041] A conductive layer 60 and a relay layer 62 are provided on the transistor 1 with an interlayer insulating layer 76 interposed therebetween. The conductive layer 60 and the relay layer 62 are provided in the same layer and are made of a light-shielding conductive material. The interlayer insulating layer 76 is made of the same material as the interlayer insulating layer 82.

[0042] The conductive layer 60 constitutes a part of the data line 4. The conductive layer 60 is electrically connected to a source region 70s of the semiconductor layer 70 via a contact hole 73 that penetrates the interlayer insulating layer 76. The relay layer 62 is electrically connected to a drain region 70d of the semiconductor layer 70 via a contact hole 71 that penetrates the interlayer insulating layer 76.

[0043] An interlayer insulating layer 64 is provided on the conductive layer 60 and the relay layer 62, and a relay layer 52 is provided on the interlayer insulating layer 64. The relay layer 52 is formed of a light-shielding conductive material. The interlayer insulating layer 64 is formed of the same material as the interlayer insulating layer 82. The relay layer 52 is electrically connected to the relay layer 62 via a contact hole 61 that penetrates the interlayer insulating layer 64.

[0044] The auxiliary capacitance 2 is provided on the relay layer 52 with an interlayer insulating layer 54 interposed therebetween. The auxiliary capacitance 2 has a capacitance electrode 50 provided on the base 90 side, a capacitance electrode 40 provided on the pixel electrode 10 side, and a dielectric layer 56 provided between the capacitance electrode 50 and the capacitance electrode 40. The capacitance electrode 40 and the capacitance electrode 50 are both formed of a light-shielding conductive material. The interlayer insulating layer 54 is formed of the same material as the interlayer insulating layer 82.

[0045] The capacitance electrode 50 constitutes a part of the capacitance line 5. The capacitance electrode 40 is electrically connected to the relay layer 52 via a contact hole 51 penetrating the interlayer insulating layer 54, and is electrically connected to the drain region 70d of the transistor 1.

[0046] An optical function layer LS including a lens layer 34 is provided between the capacitance electrode 40 and the pixel electrode 10. The optical function layer LS is provided to suppress light loss. Specifically, the optical function layer LS adjusts the optical path of the transmitted light to suppress attenuation of the transmitted light that has passed through the pixel electrode 10 due to being blocked by light-shielding material layers such as the data line 4 and the capacitance line 5. The optical function layer LS includes a light-transmitting layer 42, a light-transmitting layer 32, a lens layer 34, and a light-transmitting layer 22.

[0047] The light-transmitting layer 42 is an optical path length adjustment layer, also called a path layer, for adjusting the optical path length. The light-transmitting layer 42 is made of an inorganic material such as silicon oxide. The upper surface of the light-transmitting layer 42 is planarized by a chemical mechanical polishing (CMP) process or the like.

[0048] The light-transmitting layer 32 is a lens-forming layer provided with recesses 32c that become the lens surfaces 34s of the lens layer 34, and is made of an inorganic material such as silicon oxide, similar to the light-transmitting layer 42. The light-transmitting layer 32 is made up of two light-transmitting layers (not shown).

[0049] The recesses 32c of the light-transmitting layer 32 are formed by etching the light-transmitting layer 32 after the light-transmitting layer 32 is formed. Therefore, the light-transmitting layer 32 needs to have a thickness of about 10 μm before the recesses 32c are formed. Since it is difficult to form the light-transmitting layer 32 having a thickness of about 10 μm in one step, in this embodiment, the light-transmitting layer 32 is formed by depositing the film twice.

[0050] The lens layer 34 is provided on the light-transmitting layer 32, as a layer between the transistor 1 and the pixel electrode 10. The lens layer 34 is formed of an inorganic material, such as silicon oxynitride, that has a refractive index different from that of the light-transmitting layer 32. The lens layer 34 is formed by forming a silicon oxynitride film so as to fill the recesses 32c, and then planarizing the film by CMP processing or the like.

[0051] The light-transmitting layer 22 is provided on the lens layer 34 and between the lens layer 34 and the pixel electrode 10. The light-transmitting layer 22 is an optical path length adjustment layer, and is made of an inorganic material such as silicon oxide, similar to the light-transmitting layer 42. The layer thickness of the light-transmitting layer 22 is thinner than the layer thickness of the light-transmitting layer 32. The light-transmitting layer 22 is an example of a first light-transmitting layer of the present invention.

[0052] The protective layer 24 is provided on the light-transmitting layer 22. The protective layer 24 is made of an inorganic material having light-transmitting and hygroscopic properties, such as BSG (Borosilicate Glass). The pixel electrode 10 is provided on the protective layer 24. The alignment film 12 is provided on the pixel electrode 10.

[0053] The pixel electrode 10 and the capacitor electrode 40 are electrically connected via the contact plug 21, the relay layer 20, the contact plug 31, the relay layer 30, and the contact plug 41. As a result, the pixel electrode 10 is electrically connected to the drain region 70d of the transistor 1.

[0054] The contact plug 21 is an example of a connecting member of the present invention, and is provided in a contact hole 23. The contact hole 23 is provided penetrating the protective layer 24 and the light-transmitting layer 22, and the transistor 1 and the pixel electrode 10 are electrically connected via the contact hole 23. The contact hole 23 is an example of a contact hole of the present invention.

[0055] The contact plug 21 is formed by filling the inside of the contact hole 23 with a conductive material such as tungsten. The contact plug 21 contacts the pixel electrode 10 and the relay layer 20 to electrically connect the pixel electrode 10 and the relay layer 20. The contact plug 21 contains the same material as a light absorbing member described later. The light absorbing member is provided in the light transmitting layer 22 in the same manner as the contact plug 21. This makes it possible to form the contact plug 21 and the light absorbing member in the same manufacturing process.

[0056] The relay layer 20 is provided as a layer between the light-transmitting layer 22 and the lens layer 34. When tungsten is used for the contact plug 21, the relay layer 20 is formed of a material that can have good electrical conduction with tungsten, such as titanium nitride.

[0057] The contact plug 31 is provided in a contact hole 33. The contact hole 33 penetrates the lens layer 34 and the light-transmitting layer 32, and is provided at a position where the thickness T1 of the lens layer 34 along the Z axis is smallest.

[0058] The contact plug 31 is formed by filling the inside of the contact hole 33 with a conductive material such as tungsten. The contact plug 31 contacts the relay layer 20 and the relay layer 30, and electrically connects between the relay layer 20 and the relay layer 30. In this embodiment, the contact hole 33 penetrates the relay layer 30 and exposes the contact plug 41 at the bottom surface of the contact hole 33. That is, the contact plug 31 also contacts the contact plug 41.

[0059] The relay layer 30 is provided as a layer between the light transmitting layer 32 and the light transmitting layer 42. When tungsten is used for the contact plug 31, the relay layer 30 is formed of a material that can have good electrical conduction with tungsten, such as titanium nitride.

[0060] The contact plug 41 is provided in the contact hole 43. The contact hole 43 is provided so as to penetrate the light-transmitting layer 42. The contact plug 41 is formed by filling the inside of the contact hole 43 with a conductive material such as tungsten. The contact plug 41 is in contact with the relay layer 30, the capacitance electrode 40, and the contact plug 31, and electrically connects the relay layer 30 and the contact plug 31 to the capacitance electrode 40.

[0061] 1.4. Planar structure of the display area of ​​the element substrate Fig. 5 is a plan view showing a part of the display region A1 of the element substrate 100, and is a view of the display region A1 of the element substrate 100 as viewed in the Z2 direction from the liquid crystal layer Lc side. In Fig. 5, the pixel electrodes 10 are drawn with solid lines, and the configuration included in the optical function layer LS provided on the base 90 side of the pixel electrodes 10 is drawn with dashed lines. The curved shape of the lens surface 34s is indicated by a double circle drawn with two-dot chain lines, and the boundary where two adjacent lens surfaces 34s meet is indicated by a boundary line 34b.

[0062] 5, the pixel electrodes 10 are arranged in a matrix along the X-axis and Y-axis. The contact plug 21 is provided at one of the four corners of the pixel electrode 10, which in this embodiment is at a position overlapping with the lower left corner of the drawing in plan view.

[0063] The relay layer 20 has a rectangular shape. Each of the four corners of the relay layer 20 is provided so as to overlap one of the corners of four pixel electrodes 10 adjacent to each other in the X2 direction, the Y2 direction, and the diagonal direction of the pixel electrodes 10.

[0064] The contact plug 21 is provided at a position so as to overlap with a corner of the relay layer 20 in a plan view. The contact plug 31 is provided at a position so as to overlap with the relay layer 20 in a plan view. In this embodiment, the contact plug 31 is provided at a position so as not to overlap with the contact plug 21 in a plan view. In order to provide the contact plug 31 so as not to overlap with the contact plug 21, the contact plug 31 is provided in the relay layer 20, close to a corner diagonally opposite the corner where the contact plug 21 is provided.

[0065] In this manner, when the contact plug 21 is provided at a position where it does not overlap with the contact plug 31, the film formation properties of the pixel electrode 10 overlapping with the contact plug 21 can be improved compared to when the contact plug 21 is provided at a position where it overlaps with the contact plug 31.

[0066] The contact plug 31 has an inverted truncated cone shape, so that an outer edge 31a of the top surface of the contact plug 31 surrounds the outside of an outer edge 31b of the bottom surface in a plan view.

[0067] Although not shown, the relay layer 30 is provided to have the same size and shape as the relay layer 20. The relay layer 20 and the relay layer 30 overlap almost completely in a plan view. Although not shown, the contact plug 41 is provided at a position overlapping the contact plug 31.

[0068] The capacitance electrode 40 has a wide portion 40w provided at the corner of the L shape, an extension portion extending from the wide portion 40w along the X1 direction so as to overlap with the scanning line 3, and an extension portion extending from the wide portion 40w along the Y1 direction so as to overlap with the data line 4.

[0069] The wide portion 40w is provided so as to overlap the contact holes 33, 43, and 51. The wide portion 40w is also provided so as to overlap the relay layer 20 almost completely.

[0070] In this embodiment, the intersection of the boundary line 34b overlaps with the contact plug 31. This indicates that the contact plug 31 is provided penetrating the lens surface 34s of the lens layer 34. Note that the boundary line 34b overlapping with the inside of the contact hole 33 actually disappears when the contact hole 33 is formed in the lens layer 34, but is shown in FIG. 5 to indicate that the lens surface 34s is provided without any gaps.

[0071] 1.5. Configuration of light absorbing material on element substrate Fig. 6 is a cross-sectional view including the region S1 in Fig. 1 and showing the cross-sectional structure along the XZ plane and the arrangement of the light absorbing members in the element substrate 100. Note that the scale of Fig. 6 in the direction along the X-axis is different from that of Fig. 4.

[0072] 6, a plurality of openings 151h are provided in the light-transmitting layer 22. A light-absorbing member 151 is provided in each of the plurality of openings 151h. Therefore, it is possible to form the contact holes 23 and the openings 151h in the light-transmitting layer 22 in the same manufacturing process. This makes it possible to utilize a conventional manufacturing process without requiring a dedicated manufacturing process for forming the light-absorbing members 151.

[0073] The light absorbing member 151 corresponds to the sealing area A3 in which the sealing member 8 is provided in the direction along the X-axis. The sealing area A3 is composed of an inner area A3i and an outer area A3o. The inner area A3i and the outer area A3o are adjacent to each other, and the inner area A3i is provided in the X2 direction, and the outer area A3o is provided in the X1 direction. The sealing area A3 is included in the outer area A2 described above.

[0074] Various wirings 74S, 60S, 52S, and 50S are provided in the Z2 direction of the light-transmitting layer 32. The wiring 74S is provided on the gate insulating layer 72 and is located in the same layer as the gate electrode 74. The wiring 60S is provided on the interlayer insulating layer 76 and is located in the same layer as the conductive layer 60. The wiring 52S is provided on the interlayer insulating layer 64 and is located in the same layer as the relay layer 52. The wiring 50S is provided on the interlayer insulating layer 54 and is located in the same layer as the capacitance electrode 50. In the following description, the wirings 74S, 60S, 52S, and 50S may be collectively referred to as wiring M.

[0075] The wiring M is located at a position overlapping with the sealing member 8 in a plan view. The wiring 50S of the wiring M is an example of a light-shielding member of the present invention. The wiring 50S is provided so as to overlap with the scanning line driving circuit 6 and the data line driving circuit 7 (not shown) in a plan view. In addition to the original function of transmitting an electric signal, the wiring 50S also has a function of reducing light incident mainly from the Z2 direction on the scanning line driving circuit 6, the data line driving circuit 7, etc.

[0076] A transparent conductive layer 10S is provided on the protective layer 24. The transparent conductive layer 10S is disposed slightly apart in the X2 direction from the end of the sealing area A3 in the X2 direction in the direction along the X axis. The transparent conductive layer 10S is located in the same layer as the pixel electrode 10 and is made of the same transparent conductive material as the pixel electrode 10. The transparent conductive layer 10S does not contribute to the display of images in the liquid crystal device 300. The transparent conductive layer 10S has a function of sweeping, for example, electrolyte components in the liquid crystal layer Lc to the outside of the display area A1. An alignment film 12 is provided to cover the transparent conductive layer 10S.

[0077] The light absorbing member 151 is provided at a position overlapping with the seal member 8 and the wiring 50S in plan view, in other words, in the seal area A3. The light absorbing member 151 is provided protruding in the X2 direction from the seal area A3 in the direction along the X axis, and is disposed up to the vicinity of the transparent conductive layer 10S. The light absorbing member 151 is also provided up to a region overlapping with the end of the outer area A3o in the X1 direction in the direction along the Z axis.

[0078] The light absorbing member 151 absorbs irradiated light such as ultraviolet light and generates heat during a curing process of the sealing member 8 in the manufacturing process of the liquid crystal device 300. Since the sealing member 8 has photocuring and thermosetting properties, curing proceeds due to heat generated from the light absorbing member 151 in addition to the irradiated light.

[0079] The light absorbing member 151 is provided in correspondence with the sealing region A3. Therefore, heat generated by the light absorbing member 151 is unlikely to propagate to the liquid crystal layer Lc. In the conventional technology, when heat is used in addition to the curing process of the sealing member 8, it is almost inevitable that the liquid crystal layer Lc is also heated. In contrast, in this embodiment, it is possible to locally apply heat to the sealing region A3, and dissolution of the components of the sealing member 8 into the liquid crystal layer Lc is suppressed.

[0080] The light absorbing member 151 contains the same material as the contact plug 21, and can be formed in the same manufacturing process as the contact plug 21. Examples of the same material include materials such as tungsten and titanium nitride that are conductive, have a relatively high light absorption rate, and generate heat by absorbed light. In this embodiment, a material containing tungsten, specifically tungsten, is used as the light absorbing member 151 and the contact plug 21.

[0081] A known technique can be used to form the light absorbing member 151. For example, first, grooves and openings for forming the light absorbing member 151 are provided in the light transmitting layer 22. A known technique can be used to form the grooves and openings. When the grooves and openings are formed by etching, half etching is used because there is no wiring or the like to serve as an etching stopper. The grooves and openings may be formed in the same process as the contact holes 23 in which the contact plugs 21 are formed. Next, the area including the insides of the grooves and openings is covered with tungsten by a CVD (Chemical Vapor Deposition) method or the like, and then the surface is polished to form the light absorbing member 151.

[0082] The light absorbing members 151 are arranged relatively densely in the region overlapping with the inner region A3i in the direction along the Z axis, and are arranged relatively sparsely in the region overlapping with the outer region A3o. In other words, the light absorbing members 151 are arranged more densely in the region overlapping with the wiring 50S than in the region not overlapping with the wiring 50S when viewed in a plan view. The arrangement density refers to the area where the light absorbing members 151 are arranged per unit area. The reason for such an arrangement of the light absorbing members 151 will be described later.

[0083] In the embodiment described above, the optical function layer LS is also disposed in the outer area A2 including the sealing area A3, but this is not limiting. For example, the optical function layer LS does not need to be provided in the area including the sealing area A3, and may have a laminated structure of a light-transmitting layer 32 and a lens layer 34, as shown in FIG.

[0084] A manufacturing method in which the optical function layer LS is not provided in the sealing area A3 will be described with reference to Fig. 8 to Fig. 16. Fig. 8 to Fig. 12 correspond to the main part of Fig. 4 described above, and Fig. 13 to Fig. 16 correspond to the main part of Fig. 7 described above.

[0085] As shown in FIG. 8, the relay layer 30 on the light-transmitting layer 42 is covered to form the light-transmitting layer 32. Next, after placing a mask Ms on the light-transmitting layer 32, as shown in FIG. 9, a recess 32c is formed in the light-transmitting layer 32 by wet etching. Next, after removing the mask Ms, as shown in FIG. 10, the light-transmitting layer 32 on which the recess 32c is provided is covered with the lens layer 34. As a result, a lens surface 34s corresponding to the recess 32c is formed. At this time, the lens layer 34 has a step on the surface in the Z1 direction according to the shape of the recess 32c. Therefore, a planarization process such as a CMP (Chemical Mechanical Polishing) process is performed to planarize the surface of the lens layer 34 in the Z1 direction as shown in FIG. 11. Then, as shown in FIG. 12, a contact hole 33 and a contact plug 31 are formed in the light-transmitting layer 32 and the lens layer 34.

[0086] In contrast to the above, in the sealing region A3, as shown in FIG. 13, the light-transmitting layer 32 is formed on the light-transmitting layer 42. This state corresponds to FIG. 8 above. Then, as shown in FIG. 14, a mask Ms is placed on the light-transmitting layer 32. Since no optical function layer LS is provided in the sealing region A3, the mask Ms covers the entire surface of the light-transmitting layer 32 in the Z1 direction. This state corresponds to FIG. 9 above. Next, after removing the mask Ms, the light-transmitting layer 32 is covered with the lens layer 34 as shown in FIG. 15. This state corresponds to FIG. 10 above. Then, as shown in FIG. 16, the thickness of the lens layer 34 is reduced by the planarization process. This state corresponds to FIG. 11 above.

[0087] The planar shape of the light absorbing member 151 will be described with reference to Figs. 17 to 20. Figs. 17 to 20 are schematic plan views of the liquid crystal device 300, enlarging the area S1 in Fig. 1. Figs. 17 to 20 only show a portion of the configuration, such as the light absorbing member 151 and the wiring M. Furthermore, the sealing area A3 is indicated by hatching with oblique lines. In the following description of Figs. 17 to 20, the planar view from the Z1 direction will be described unless otherwise specified.

[0088] 17, the light absorbing member 151 is provided in the sealing area A3 and overlaps the wiring M in a planar manner. A transparent conductive layer 10S is provided in the X2 direction of the wiring M so as to surround the display area A1 (not shown) in a frame shape.

[0089] In the region S1, the wiring M has a portion extending along the Y-axis and a portion extending along the X-axis. The wiring 50S of the wiring M extends along the Y-axis with the width shown in the figure in the direction along the X-axis. The light absorbing member 151 is linear and extends along one extension direction of the wiring M and the extension direction of the wiring 50S.

[0090] The extension of the light absorbing member 151 increases the planar area of ​​the light absorbing member 151, and increases the amount of heat generated by the light absorbing member 151 due to light. This further improves the hardening property of the seal member 8. Although not shown in the drawings, the light absorbing member 151 may be provided in a frame shape surrounding the display area A1, or may be discontinuous in various places. In FIG. 17, the light absorbing member 151 is linear along the Y axis, but the shape of the light absorbing member 151 is not limited to this.

[0091] 18, the light absorbing member 151 may extend along the X-axis, which is the other extending direction of the wiring M, in addition to extending along the Y-axis. Alternatively, as shown in Fig. 19 and Fig. 20, the light absorbing member 152 may be circular in plan view. The planar shapes of the light absorbing members 151 and 152 are not limited to the above, and may be a combination of a line shape and a circle shape or other shapes.

[0092] The arrangement of the light absorbing member 151 and the traveling state of light in the process of curing the seal member 8 will be described with reference to Fig. 21. Fig. 21 is a schematic cross-sectional view showing the incident state of light on the seal member 8.

[0093] 21, in this embodiment, the curing process of the seal member 8 uses both ultraviolet light UV1 traveling in the Z2 direction and ultraviolet light UV2 traveling in the Z1 direction. That is, the ultraviolet light UV1 is irradiated from the counter substrate 200 side, and the ultraviolet light UV2 is irradiated from the element substrate 100 side. Note that the light used to cure the seal member 8 is not limited to ultraviolet light.

[0094] Since the ultraviolet ray UV1 is not blocked by the counter substrate 200, most of the irradiated ultraviolet ray UV1 is incident on the sealing member 8. The ultraviolet ray UV1 excites a polymerization initiator contained in the sealing member 8, and a portion of the ultraviolet ray UV1 passes through the sealing member 8 and reaches the element substrate 100. A further portion of the ultraviolet ray UV1 that reaches the element substrate 100 is absorbed by the light absorbing member 151. The light absorbing member 151 generates heat due to the ultraviolet ray UV1.

[0095] Of the ultraviolet rays UV2, the portion irradiated to the region that overlaps with the wiring 50S in the direction along the Z axis, i.e., the inner region A3i, is blocked by the wirings 50S, 52S, etc. and does not easily reach the sealing member 8. On the other hand, of the ultraviolet rays UV2 irradiated to the region that does not overlap with the wiring 50S in the direction along the Z axis, i.e., the outer region A3o, a portion is blocked by the wirings 74S, 60S, 52S, etc., and the remaining portion passes through the gaps between them.

[0096] As described above, the light absorbing member 151 is overlapped with the wiring M in the direction along the Z axis. Therefore, in the outer region A3o, the ultraviolet rays UV2 that pass through the gaps in the wiring M also pass through the gaps in the light absorbing member 151 as they are and enter the sealing member 8. This is because, in curing the sealing member 8, the amount of incident ultraviolet rays UV2 is more important than the amount of heat generated by the light absorbing member 151. In this case, in the outer region A3o, the planar shape of the light absorbing member 151 is restricted by the wiring M. That is, in the outer region A3o, it is preferable to arrange the wiring M and the light absorbing member 151 so as to overlap each other in a planar manner, so that the ultraviolet rays UV2 can pass through the gaps therebetween.

[0097] Here, in the inner region A3i, the light absorbing members 151 are arranged relatively densely to overlap the wirings 52S, 50S, etc. As described above, in the inner region A3i, the ultraviolet rays UV2 are unlikely to reach the light absorbing members 151. Therefore, in the inner region A3i, there is no need to consider the permeability of the ultraviolet rays UV2 to the seal member 8, and emphasis is placed on the heat generation by the ultraviolet rays UV1. Therefore, in the inner region A3i, the light absorbing members 151 may be arranged more densely in addition to overlapping the wirings M. This is the reason for the sparsely and densely arranged light absorbing members 151. Although not shown in the drawing, in the direction along the X-axis, the light absorbing members 151 may be arranged to protrude in the X2 direction from the seal region A3.

[0098] According to this embodiment, the following effects can be obtained.

[0099] The light absorbing members 151, 152 absorb the ultraviolet rays UV1, UV2 irradiated when the seal member 8 is cured, and generate heat. The heat generated by the light absorbing members 151, 152 accelerates the curing of the seal member 8. This makes it possible to provide a liquid crystal device 300 that improves the curing property of the seal member 8 for sealing liquid crystal. In addition, the light absorbing members 151, 152 and the contact plug 21 contain tungsten, and can be formed in the same manufacturing process. Therefore, no special manufacturing process is required to form the light absorbing members 151, 152, and conventional manufacturing processes can be followed.

[0100] 2. Embodiment 2 The structure of a liquid crystal device as an electro-optical device according to the second embodiment will be described with reference to Fig. 22. Fig. 22 is a cross-sectional view of an element substrate 101 according to the second embodiment, including a region corresponding to region S1 in Fig. 1 of the above embodiment, showing a cross-sectional structure along the XZ plane and an arrangement of light absorbing members. Here, in Fig. 22, the lens surface 34s and the recessed portion 32c are omitted. Also, in Fig. 22, the scale in the direction along the X-axis is approximately the same as that in Fig. 6 described above.

[0101] A liquid crystal device 301 according to this embodiment differs from the liquid crystal device 300 according to the above embodiment in the arrangement of the light absorbing member on the element substrate 101. Therefore, the same components as those in the element substrate 100 of embodiment 1 are denoted by the same reference numerals, and descriptions of the overlapping components will be omitted.

[0102] 22, the element substrate 101 according to this embodiment includes a light absorbing member 153. The light absorbing member 151 in the above-described embodiments is provided in the same layer as the contact plug 21. In contrast, the light absorbing member 153 is provided in the lens layer 34 and the light transmitting layer 32. This point differs from the above-described embodiments.

[0103] Although not shown in the drawings, in this embodiment, the contact plug 31 of the above embodiment is an example of a connection member of the present invention, and the contact hole 33 is an example of a contact hole of the present invention. That is, the contact plug 31 is provided in the contact hole 33 provided in the lens layer 34 and the light-transmitting layer 32.

[0104] The light-transmitting layer 32 is an example of the second light-transmitting layer of the present invention, and is provided between the transistor 1 and the lens layer 34 .

[0105] The light absorbing member 153 is provided in an opening 153h provided in the lens layer 34 and the light transmitting layer 32. Therefore, it is possible to form the contact hole 33 and the opening 153h in the lens layer 34 and the light transmitting layer 32 in the same manufacturing process. Also in this embodiment, the light absorbing member 153 and the contact plug 31 are made of tungsten. Therefore, no dedicated manufacturing process is required for forming the light absorbing member 153. As a result, conventional manufacturing processes can be utilized in manufacturing the liquid crystal device 301.

[0106] Here, the optical function layer LS may not be provided in the sealing area A3, and a laminated structure of the light-transmitting layer 32 and the lens layer 34 may be used. Specifically, as shown in Fig. 23, a relatively flat light-transmitting layer 32 and a relatively flat lens layer 34 are laminated, and an opening 153h and a light-absorbing member 153 are disposed. Fig. 23 shows only the main part of Fig. 22. The planar shape of the light-absorbing member 153 can be the same as that of the above embodiment.

[0107] 24, the light absorbing member 153 is longer in the direction along the Z axis than the light absorbing member 151 of the above embodiment. Therefore, the light absorbing member 153 is more likely to absorb components of the ultraviolet rays UV1 and UV2 that travel in a direction that diagonally intersects with the Z axis. This increases the amount of heat generated by the light absorbing member 153, and the hardening property of the seal member 8 can be further improved.

[0108] According to this embodiment, it is possible to obtain the same effects as those of the above embodiment.

[0109] 3. Embodiment 3 25 is a schematic diagram showing a projector as a projection display device, which is an example of an electronic device. The projector 1000 according to this embodiment is, for example, a three-plate projector equipped with three of the above-mentioned liquid crystal devices 300. The liquid crystal device 300R corresponds to a red display color, the liquid crystal device 300G corresponds to a green display color, and the liquid crystal device 300B corresponds to a blue display color. The control unit 1005 includes, for example, a processor and a memory, and controls the operations of the liquid crystal devices 300R, 300G, and 300B.

[0110] The illumination optical system 1001 supplies a red component RL of light emitted from an illumination device 1002, which is a light source, to the liquid crystal device 300R, a green component GL to the liquid crystal device 300G, and a blue component BL to the liquid crystal device 300B. Each of the liquid crystal devices 300R, 300G, and 300B functions as a light modulation device that modulates the respective color lights RL, GL, and BL supplied from the illumination optical system 1001 in accordance with a display image.

[0111] The projection optical system 1003 combines the light emitted from each of the liquid crystal devices 300 R, 300 G, and 300 B, and projects the combined light onto a projector screen 1004 .

[0112] As described above, the projector 1000 as the electronic device of this embodiment includes the above-mentioned liquid crystal device 300. Therefore, since the projector 1000 includes the liquid crystal device 300 that improves the hardening property of the seal member 8, it is possible to provide the projector 1000 that suppresses the occurrence of problems such as display defects. Note that the projector 1000 of this embodiment may include the liquid crystal device 301 of the second embodiment instead of the liquid crystal device 300 of the first embodiment. This makes it possible to obtain the same effects as described above.

[0113] The electronic device is not limited to the exemplified three-panel projector 1000. For example, it may be a single-panel, two-panel, or projector equipped with four or more liquid crystal devices 300. The electronic device may also be a PDA (Personal Digital Assistant), digital still camera, television, video camera, car navigation device, in-vehicle display, electronic organizer, electronic paper, calculator, word processor, workstation, video phone, POS (Point of sale), printer, scanner, copier, video player, or device equipped with a touch panel.

[0114] Although the preferred embodiment has been described above, the present invention is not limited to the above embodiment. Furthermore, the configuration of each part of the present invention can be replaced with any configuration that exhibits the same function as the above embodiment, and any configuration can be added. [Explanation of symbols]

[0115] 1...transistor, 6...scanning line driving circuit as driving circuit, 7...data line driving circuit as driving circuit, 8...sealing member, 10...pixel electrode, 22...light-transmitting layer as first light-transmitting layer, 21, 31...contact plug as connecting member, 23, 33...contact hole, 32...light-transmitting layer as second light-transmitting layer, 34...lens layer, 50S...wiring as light-shielding member, 151, 152, 153...light-absorbing member, 151h, 153h...opening, 300, 301...liquid crystal device as electro-optical device, 300B, 300G, 300R...liquid crystal device, 1000...projector as electronic device, M...wiring

Claims

1. A transistor and a pixel electrode electrically connected to the transistor through a contact hole; a connection member provided in the contact hole; a sealing member having photocuring and thermosetting properties; An electro-optical device comprising: a light absorbing member that contains the same material as the connecting member, and that is disposed at a position that overlaps with the sealing member in a plan view.

2. a lens layer between the transistor and the pixel electrode; a first light-transmitting layer between the lens layer and the pixel electrode; the connection member is provided in the contact hole provided in the first light transmitting layer, The electro-optical device according to claim 1 , wherein the light absorbing member is provided in an opening provided in the first light transmitting layer.

3. a lens layer between the transistor and the pixel electrode; a second light-transmitting layer between the transistor and the lens layer; the connection member is provided in the contact hole provided in the lens layer and the second light transmitting layer, The electro-optical device according to claim 1 , wherein the light absorbing member is provided in an opening provided in the lens layer and the second light transmitting layer.

4. Wiring is provided at a position overlapping with the sealing member in a plan view, The electro-optical device according to claim 1 , wherein the light absorbing member is provided at a position overlapping the wiring in a plan view.

5. The electro-optical device according to claim 4 , wherein the light absorbing member extends along the extending direction of the wiring.

6. A drive circuit provided along an inner edge of the seal member; a light blocking member provided so as to overlap the drive circuit in a plan view, The electro-optical device according to claim 1 , wherein the light absorbing member is provided at a position overlapping the light blocking member in a plan view.

7. The electro-optical device according to claim 6 , wherein the light absorbing member extends in a direction parallel to an extension direction of the light blocking member.

8. The electro-optical device according to claim 6 , wherein the light absorbing members are arranged at a higher density in a region overlapping with the light blocking member in a plan view than in a region not overlapping with the light blocking member.

9. The electro-optical device according to claim 1 , wherein the connecting member and the light absorbing member comprise tungsten.

10. An electronic device comprising the electro-optical device according to claim 1 .

Images