Electrostatic chuck and substrate processing apparatus

Abstract

To provide a technique capable of improving the sealing performance between a seal band of an electrostatic chuck and a substrate.SOLUTION: An electrostatic chuck includes a dielectric member configured to support a substrate, and an electrostatic electrode disposed within the dielectric member. The dielectric member includes: a first upper surface; a first annular seal band which is disposed outside the first upper surface and configured to protrude upward beyond the first upper surface; a second annular seal band which is disposed outside the first seal band and configured to protrude upward beyond the first upper surface; and a first groove which is disposed between the first seal band and the second seal band. The first groove has an opening width in the radial direction between 0.001 mm and 0.2 mm.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] Exemplary embodiments of the present disclosure relate to an electrostatic chuck and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 describes a technique for providing an electrostatic chuck having an annular seal band that supports the outer periphery of a substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6124156 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can improve the sealing performance between a seal band of an electrostatic chuck and a substrate. [Means for solving the problem]

[0005] An electrostatic chuck in one exemplary embodiment of the present disclosure includes a dielectric member configured to support a substrate and an electrostatic electrode disposed within the dielectric member, the dielectric member having a first upper surface, an annular first sealing band disposed outside the first upper surface and configured to protrude upward from the first upper surface, an annular second sealing band disposed outside the first sealing band and configured to protrude upward from the first upper surface, and a first groove disposed between the first sealing band and the second sealing band, the first groove having a radial opening width of not less than 0.001 mm and not more than 0.2 mm. Effect of the Invention

[0006] According to one exemplary embodiment of the present disclosure, a technique can be provided that can improve the sealing performance between a seal band of an electrostatic chuck and a substrate. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. [Diagram 2] FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Diagram 3] 4A to 4C are diagrams illustrating an example of the configuration of a substrate support part. [Figure 4] FIG. 2 is a top view of an electrostatic chuck for explaining a configuration example of the electrostatic chuck. [Diagram 5] 1A and 1B are diagrams for explaining a configuration example of a seal band of an electrostatic chuck. [Figure 6] 1 is a flowchart illustrating an example of a substrate processing method. [Figure 7] 11 is a diagram for explaining an example of a state in which the electrostatic chuck is thermally expanded to accommodate a foreign object in a first groove. FIG. [Figure 8] 11 is a diagram for explaining an example of a state in which the electrostatic chuck is thermally shrunk and the foreign object is accommodated in the first groove. FIG. [Figure 9] 10 is a flowchart illustrating another example of a substrate processing method. [Figure 10] FIG. 11 is a top view of an electrostatic chuck for explaining another example of the configuration of the electrostatic chuck. [Figure 11] 11A and 11B are diagrams for explaining other configuration examples of the seal band of the electrostatic chuck. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Each embodiment of the present disclosure will be described below.

[0009] In one exemplary embodiment, an electrostatic chuck is provided, comprising: a dielectric member configured to support a substrate; and an electrostatic electrode disposed within the dielectric member, the dielectric member having a first upper surface, an annular first sealing band disposed outside the first upper surface and configured to protrude upward from the first upper surface, an annular second sealing band disposed outside the first sealing band and configured to protrude upward from the first upper surface, and a first groove disposed between the first sealing band and the second sealing band, the first groove having a radial opening width of not less than 0.001 mm and not more than 0.2 mm.

[0010] In one exemplary embodiment, the first groove has a depth of not less than 0.001 mm and not more than 0.2 mm.

[0011] In one exemplary embodiment, the first seal band has a second upper surface, and the radial width of the second upper surface is less than or equal to the radial thermal contraction movement of the first seal band when the dielectric member thermally contracts in a temperature range used in processing the substrate.

[0012] In one exemplary embodiment, the second seal band has a third upper surface, and the radial width of the third upper surface is less than or equal to the radial thermal contraction movement of the second seal band when the dielectric member thermally contracts in a temperature range used in processing the substrate.

[0013] In one exemplary embodiment, the dielectric member is configured so that the temperature can be adjusted within a given temperature range by a temperature adjustment unit.

[0014] In one exemplary embodiment, the first sealing band has a second upper surface, and the radial width of the second upper surface is less than or equal to the radial thermal contraction movement of the first sealing band over a temperature range when the dielectric member thermally contracts over the temperature range.

[0015] In one exemplary embodiment, the second seal band has a third upper surface, and the radial width of the third upper surface is less than or equal to the radial thermal contraction movement of the second seal band when the dielectric member thermally contracts over a temperature range.

[0016] In one exemplary embodiment, the bottom of the first groove is positioned higher than the first top surface.

[0017] In one exemplary embodiment, the first sealing band has a second upper surface and the second sealing band has a third upper surface, and the radial width of the second upper surface is the same as or less than the radial width of the third upper surface.

[0018] In one exemplary embodiment, the dielectric member further includes a connecting portion connecting the first seal band and the second seal band.

[0019] In one exemplary embodiment, the dielectric member is disposed on the first upper surface and further has a plurality of protrusions protruding upwardly relative to the first upper surface, the upper surfaces of the protrusions being disposed at a position equal to or lower than the upper surfaces of the first seal band and the second seal band.

[0020] In one exemplary embodiment, the dielectric member further includes an annular third seal band disposed outside the second seal band and configured to protrude upward from the first upper surface, and a second groove disposed between the second seal band and the third seal band, the second groove having a radial opening width of not less than 0.001 mm and not more than 0.2 mm.

[0021] In one exemplary embodiment, the first sealing band has a second upper surface, the second sealing band has a third upper surface, and the third sealing band has a fourth upper surface, and the radial width of the fourth upper surface, the radial width of the third upper surface, and the radial width of the second upper surface are equal, or the radial width of the third upper surface is greater than the radial width of the second upper surface and the radial width of the fourth upper surface is greater than the radial width of the third upper surface.

[0022] In one exemplary embodiment, a method and apparatus for manufacturing a substrate include a chamber, an electrostatic chuck disposed within the chamber, a temperature regulator configured to regulate a temperature of the electrostatic chuck, and a controller configured to control the electrostatic chuck and the temperature regulator. The electrostatic chuck includes a dielectric member configured to support a substrate, and an electrostatic electrode disposed within the dielectric member. The dielectric member includes a first upper surface, an annular first seal band disposed outside the first upper surface and configured to protrude above the first upper surface, and an annular first seal band disposed outside the first seal band and configured to support the first upper surface. a first groove disposed between the first seal band and the second seal band, the first groove having a radial opening width of 0.001 mm or more and 0.2 mm or less, and a control unit configured to: (a) electrostatically attract a substrate to the electrostatic chuck; (b) change the temperature of the electrostatic chuck to which the substrate is electrostatically attracted, thereby causing the electrostatic chuck to thermally expand and / or contract; and (c) process the substrate on the electrostatic chuck after (a) and (b).

[0023] In one exemplary embodiment, the controller is further configured to (d) prior to (a), modify a temperature of the electrostatic chuck to thermally expand and / or contract the electrostatic chuck.

[0024] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are given the same reference numerals, and duplicated explanations will be omitted. Unless otherwise specified, the positional relationship such as up, down, left, right, etc. will be described based on the positional relationship shown in the drawing. The dimensional ratio of the drawings does not indicate the actual ratio, and the actual ratio is not limited to the illustrated ratio.

[0025] <An example of a plasma processing system> FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later. The substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.

[0026] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron cyclotron resonance (ECR) plasma, a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. Also, various types of plasma generating units may be used, including an alternating current (AC) plasma generating unit and a direct current (DC) plasma generating unit. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Thus, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0027] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is realized by, for example, a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described in the present disclosure may be implemented in a circuit or processing circuit including a general-purpose processor, an application specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a central processing unit (CPU), conventional circuitry, and / or a combination thereof, programmed to realize the described functions. A processor is considered to be a circuit or processing circuit including transistors and other circuitry. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2, and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination of these. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).In this disclosure, a circuit, unit, or means is hardware that is programmed to realize or configured to perform a described function. The hardware may be any hardware described in this disclosure or any hardware that is programmed to realize or known to perform the described function. If the hardware is a processor that is considered to be a type of circuit, the circuit, means, or unit is a combination of hardware and software used to configure the hardware and / or processor.

[0028] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining the configuration example of a capacitively coupled plasma processing apparatus.

[0029] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from a housing of the plasma processing chamber 10.

[0030] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0031] In one embodiment, the body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b disposed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also referred to as a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one bias electrode electrically connected or coupled to the power source 31 and / or the power source 32 described below may be disposed in the ceramic member 1111a. In this case, the at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode in the ceramic member 1111a may function as a plurality of lower electrodes. In one embodiment, the first voltage generating unit 32a functioning as a voltage pulse generating unit described below is electrically connected or coupled to the bias electrode in the ceramic member 1111a, and the first RF generating unit 31a described below is electrically connected or coupled to the conductive member of the base 1110. Also, the electrostatic chuck electrode 1111b may function as a lower electrode. The substrate support 11 therefore comprises at least one bottom electrode.

[0032] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0033] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0034] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes at least one upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0035] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include at least one flow modulation device to modulate or pulse a flow rate of the at least one process gas.

[0036] The power supply system 30 includes a power supply 31 electrically connected or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0037] The power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode, and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generating unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching device. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0038] The second RF generating unit 31b is electrically connected or coupled to at least one lower electrode and configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generating unit 31b is electrically connected or coupled to at least one lower electrode via at least one impedance matching device. When the first RF generating unit 31a is electrically connected or coupled to a lower electrode, the second RF generating unit 31b may be electrically connected or coupled to the same lower electrode, or may be electrically connected or coupled to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0039] The power supply system 30 may also include a power supply 32 electrically connected or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generating unit 32a and a second voltage generating unit 32b. In one embodiment, the first voltage generating unit 32a is electrically connected or coupled to at least one lower electrode and configured to generate a first voltage signal. The generated first voltage signal is applied to the at least one lower electrode. In one embodiment, the second voltage generating unit 32b is electrically connected or coupled to at least one upper electrode and configured to generate a second voltage signal. The generated second voltage signal is applied to the at least one upper electrode.

[0040] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generator 32a and / or the second voltage generator 32b function as a voltage pulse generator configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has a plurality of cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may be an arbitrary waveform having a rectangular, trapezoidal, triangular or combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. The first and second voltage generating units 32a, 32b may be provided in addition to the power source 31, or the first voltage generating unit 32a may be provided in place of the second RF generating unit 31b.

[0041] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0042] <Example of electrostatic chuck configuration> 3 is a diagram showing a configuration example of an electrostatic chuck 1111 in this exemplary embodiment. In one embodiment, the electrostatic chuck 1111 has a ceramic member 1111a as a dielectric member and an electrostatic chuck electrode 1111b. The material of the dielectric member may be alumina, aluminum nitride, polyimide, or the like. The electrostatic chuck 1111 may electrostatically adsorb a substrate having a diameter of 300 mm.

[0043] In one embodiment, the ceramic member 1111a has a first upper surface 200, an annular first seal band 201 positioned outside the first upper surface 200, an annular second seal band 202 positioned outside the first seal band 201, and a first groove 203 positioned between the first seal band 201 and the second seal band 202.

[0044] In one embodiment, the first upper surface 200 has a gas outlet 210 through which the heat transfer gas flows out. In one embodiment, the gas outlet 210 is connected to a heat transfer gas supply unit 212 through a gas passage 211. The gas passage 211 may pass through the inside of the substrate support 11. The heat transfer gas supply unit 212 may be provided outside the chamber 10. As shown in FIG. 4, the first upper surface 200 has a circular shape with the center of the ceramic member 1111a as the center. The gas outlet 210 may be disposed at the center of the first upper surface 200. One or more gas outlets 210 may be disposed. The heat transfer gas may include helium gas.

[0045] In one embodiment, a plurality of protrusions 220 are arranged on the first upper surface 200. As shown in FIG. 3, the protrusions 220 protrude upward from the first upper surface 200. The protrusions 220 may have a cylindrical shape. The protrusions 220 have a flat upper surface 221. A height H1 (shown in FIG. 5) of the protrusions 220 from the first upper surface 200 may be 5 μm or more and 50 μm or less. In one embodiment, as shown in FIG. 4, the plurality of protrusions 220 may be arranged at equal intervals along the circumferential direction around the center of the first upper surface 200. The plurality of protrusions 220 may be arranged concentrically or radially with respect to the center of the first upper surface 200.

[0046] 3 and 4, the first seal band 201 and the second seal band 202 are annular convex portions protruding upward from the first upper surface 200. The first seal band 201 and the second seal band 202 are arranged concentrically around the center of the ceramic member 1111a. In one embodiment, the first seal band 201 and the second seal band 202 are spaced apart from each other, and a first groove 203 is formed between the first seal band 201 and the second seal band 202.

[0047] 5, the first groove 203 has a radial opening width D1 in the range of 0.001 mm or more and 0.2 mm or less. The radial direction is a direction from the center of the electrostatic chuck 1111a (first upper surface 200) toward the outside (X direction in FIGS. 4 and 5). The opening width D1 is the width at the top end of the first groove 203. The first groove 203 has a depth H2 in the range of 0.001 mm or more and 0.2 mm or less.

[0048] In one embodiment, the first seal band 201 has an inner peripheral wall 250, an outer peripheral wall 251, and a second upper surface 252. In one embodiment, the inner peripheral wall 250 and the outer peripheral wall 251 are annular vertical surfaces. The second upper surface 252 is an annular flat surface. The second upper surface 252 connects the upper end of the inner peripheral wall 250 and the upper end of the outer peripheral wall 251.

[0049] In one embodiment, the second seal band 202 has an inner peripheral wall 260, an outer peripheral wall 261, and a third upper surface 262. In one embodiment, the inner peripheral wall 260 and the outer peripheral wall 261 are annular vertical surfaces. The third upper surface 262 is an annular flat surface. The third upper surface 262 connects the upper end of the inner peripheral wall 260 and the upper end of the outer peripheral wall 261. The outer peripheral wall 251 of the first seal band 201 and the inner peripheral wall 260 of the second seal band 202 are arranged to face each other in parallel and are connected by an annular flat bottom surface 270. The first groove 203 is formed by the outer peripheral wall 251, the inner peripheral wall 260, and the bottom surface 270. The first groove 203 has a rectangular cross-sectional shape. The first groove 203 may be formed to have a cross-sectional shape other than a square, such as a triangular shape, a circular arc shape, or the like. The first seal band 201, the second seal band 202 and the first groove 203 may be formed by laser processing.

[0050] In one embodiment, the second top surface 252 and the third top surface 262 are disposed at a higher position than the first top surface 200. The bottom surface 270 is disposed at a higher position than the first top surface 200. The second top surface 252 and the third top surface 262 are disposed at a level equal to or higher than the top surface 221 of the convex portion 220. The third top surface 262 is disposed at a level equal to or higher than the second top surface 252. The second top surface 252 may be disposed at a higher position than the top surface 221 of the convex portion 220, and the third top surface 262 may be disposed at a higher position than the second top surface 252.

[0051] In one embodiment, as shown in FIG. 3, the ceramic member 1111a (electrostatic chuck 1111) is configured to be temperature adjustable by a temperature adjustment module having the above-mentioned flow path 1110a. The temperature adjustment module is an example of a temperature adjustment unit. The flow path 1110a is connected to a heat transfer medium supply device 290. A heat transfer medium is supplied from the heat transfer medium supply device 290 to the flow path 1110a, and the heat transfer medium flows through the flow path 1110a, thereby adjusting the temperature of the ceramic member 1111a in a given temperature range P1. The radial width D2 of the second upper surface 252 shown in FIG. 5 may be set to be equal to or less than the radial thermal contraction movement amount of the first seal band 201 when the ceramic member 1111a is thermally contracted in the temperature range P1. The radial width D3 of the third upper surface 262 may be set to be equal to or less than the radial thermal contraction movement amount of the second seal band 202 when the ceramic member 1111a is thermally contracted in the temperature range P1.

[0052] The radial width D2 of the second upper surface 252 and the radial width D3 of the third upper surface 262 may each be 0.03 mm or more and 0.2 mm or less. The radial width D2 of the second upper surface 252 and the radial width D3 of the third upper surface 262 may be larger than the radial opening width D1 of the first groove 203. The radial width D2 of the second upper surface 252 may be equal to or smaller than the radial width D3 of the third upper surface 262. The radial width D4 including the first seal band 201, the second seal band 202, and the first groove 203 (the length from the inner peripheral end of the first seal band 201 to the outer peripheral end of the second seal band 202) may be 0.3 mm or more and 5 mm or less.

[0053] The first seal band 201 and the second seal band 202 may be formed integrally with or separately from other portions of the ceramic member 1111a, including the first upper surface 200. The first seal band 201 and the second seal band 202 may be formed integrally with or separately from other portions of the ceramic member 1111a, including the first upper surface 200.

[0054] As shown in FIG. 3, the electrostatic chuck electrode 1111b is disposed inside the ceramic member 1111a, directly below the first upper surface 200, the first seal band 201, and the second seal band 202. In one embodiment, the electrostatic chuck electrode 1111b has a circular shape. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected to a direct current (DC) power supply 301 via a switch 300. When a DC voltage is applied to the electrostatic chuck electrode 1111b by the DC power supply 301, an electrostatic attractive force (Coulomb force) can be generated between the ceramic member 1111a and the substrate W. The substrate W is attracted to the ceramic member 1111a by the electrostatic attractive force, and is adsorbed and held on the upper surface of the ceramic member 1111a.

[0055] <An example of a substrate processing method> In one embodiment, the substrate processing method is executed by a controller 2 in the plasma processing apparatus 1. Figure 6 is a diagram for explaining an example of the flow of the substrate processing method.

[0056] As shown in FIG. 6, the substrate processing method includes a step ST1 of electrostatically attracting a substrate, a step ST2 of thermally expanding and / or thermally contracting the electrostatic chuck, and a step ST3 of processing the substrate.

[0057] In step ST1, the substrate W is loaded into the chamber 10, and as shown in FIG. 3, the substrate W is placed on the ceramic member 1111a of the substrate support 11. The substrate W is supported on the first seal band 201, the second seal band 202, and the protrusion 220 of the ceramic member 1111a. Then, a DC voltage is applied to the electrostatic chuck electrode 1111b by the DC power supply 301, and an electrostatic attraction is generated between the ceramic member 1111a and the substrate W, and the substrate W is electrostatically attracted to the first seal band 201 and the second seal band 202 of the electrostatic chuck 1111. At this time, the temperature of the electrostatic chuck 1111 may be a first temperature within a temperature range P1. The first temperature may be room temperature.

[0058] In step ST2, the temperature of the electrostatic chuck 1111 is changed to thermally expand and / or contract the electrostatic chuck 1111 (ceramic member 1111a). At this time, a heat transfer medium is supplied from the heat transfer medium supply device 290 to the flow path 1110a, and the temperature of the electrostatic chuck 1111 is adjusted.

[0059] In one embodiment, the electrostatic chuck 1111 is heated to a second temperature higher than the first temperature, for example, the upper limit of a given temperature range P1. As a result, as shown in FIG. 7, the electrostatic chuck 1111 (ceramic member 1111a) thermally expands, and the first seal band 201 and the second seal band 202 move radially outward relative to the substrate W. As a result, if there is a foreign matter B between the second seal band 202 and the substrate W, the foreign matter B moves radially inward on the second seal band 202 and enters the first groove 203. In this way, the foreign matter B between the second seal band 202 and the substrate W is removed. At this time, the foreign matter B between the first seal band 201 and the substrate W may move radially inward on the first seal band 201 and be removed to the inside of the first seal band 201.

[0060] In one embodiment, the electrostatic chuck 1111 is cooled to a third temperature lower than the first temperature, for example, the lower limit of a given temperature range P1. In this case, as shown in FIG. 8, the electrostatic chuck 1111 (ceramic member 1111a) thermally contracts, and the first seal band 201 and the second seal band 202 move radially inward relative to the substrate W. As a result, the foreign matter B between the first seal band 201 and the substrate W moves radially outward on the first seal band 201, enters the first groove 203, and is removed from between the first seal band 201 and the substrate W. At this time, the foreign matter B between the second seal band 202 and the substrate W may move radially outward on the second seal band 202, and be removed to the outside of the second seal band 202.

[0061] In step ST2, both the thermal expansion and thermal contraction of the electrostatic chuck 1111 (ceramic member 1111a) may be performed, or only one of them may be performed. Furthermore, after the electrostatic chuck 1111 is thermally expanded and / or thermally contracted, it may be returned to the original first temperature.

[0062] In step ST3, the substrate is processed. The substrate processing may be a plasma processing in which the substrate is processed using plasma. The plasma processing may be an etching processing in which a film on the substrate W is etched using plasma. In one embodiment, in the plasma processing, a heat transfer medium is supplied from the heat transfer medium supply device 290 shown in FIG. 3 to the flow path 1110a, and the electrostatic chuck 1111 and the substrate W held by the electrostatic chuck 1111 are adjusted in temperature to a given processing temperature for the plasma processing.

[0063] A heat transfer gas is supplied from the heat transfer gas supply unit 212 to the gas outlet unit 210, and the heat transfer gas is supplied from the gas outlet unit 210 to a space formed between the substrate W and the first upper surface 200. The first seal band 201 and the second seal band 202 seal the space between the first upper surface 200 and the substrate W so that the heat transfer gas filled therein does not leak into the plasma processing space 10s. The heat transfer gas adjusts the temperature of the substrate W from its back surface side. The heat transfer gas may be supplied in step ST2.

[0064] 2 to the shower head 13, and then to the plasma processing space 10s from the shower head 13. The processing gas supplied at this time contains a gas that generates active species required for etching the substrate W.

[0065] One or more RF signals are supplied to the upper electrode and / or the lower electrode from the RF power supply 31. The atmosphere in the plasma processing space 10s may be exhausted from the gas exhaust port 10e, and the inside of the plasma processing space 10s may be depressurized. As a result, plasma is generated on the substrate support 11 in the plasma processing space 10s, and the substrate W is etched.

[0066] According to this exemplary embodiment, the electrostatic chuck 1111 comprises a ceramic member 1111a configured to support a substrate and an electrostatic chuck electrode 1111b disposed within the ceramic member 1111a, the ceramic member 1111a having a first upper surface 200, an annular first seal band 201 disposed outside the first upper surface 200, an annular second seal band 202 disposed outside the first seal band 201, and a first groove 203 disposed between the first seal band 201 and the second seal band 202, the first groove 203 having a radial opening width D1 of 0.001 mm or more and 0.2 mm or less. As a result, when the electrostatic chuck 1111 (ceramic member 1111a) thermally expands or contracts, the foreign matter B between the first and second seal bands 201 and 202 and the substrate W can be moved radially on the first and second seal bands 201 and 202 and accommodated in the first groove 203. As a result, the foreign matter B that has entered between the first and second seal bands 201 and 202 and the substrate W can be easily removed from the first and second seal bands 201 and 202, and as a result, the sealing performance between the first and second seal bands 201 and 202 and the substrate W is improved. As a result, the heat transfer gas between the first upper surface 200 and the substrate W is suppressed from leaking out of the seal bands, and the leaked heat transfer gas can be suppressed from affecting the etching process. Furthermore, since the adhesion between the substrate W and the first seal band 201 and the second seal band 202 is improved, the heat from the heat transfer medium flowing through the flow path 1110a is easily transferred to the substrate W via the first seal band 201 and the second seal band 202, and the temperature of the substrate W can be controlled evenly. As a result, the substrate can be processed at a desired temperature.

[0067] The size of the foreign matter to be removed by the first groove 203 is assumed to be a diameter of about 0.01 mm for the largest and a diameter of about 0.001 mm or less for the smallest. The first groove 203 has a radial opening width D1 of 0.001 mm or more and 0.2 mm or less, so that the assumed foreign matter can be accommodated in the first groove 203. A large foreign matter exceeding 0.2 mm can be detected by a sensor or the like, and the processing of the substrate can be stopped until the foreign matter is removed. On the other hand, even if a small foreign matter less than 0.001 mm remains in the first seal band 201 or the second seal band 202, the sealing between the first seal band 201 and the second seal band 202 and the substrate W can be ensured. The first groove 203 has a radial opening width D1 of 0.001 mm or more and 0.2 mm or less, so that the foreign matter that needs to be removed can be removed while continuing the processing of the substrate. If the opening width D1 of the first groove 203 is too large, the widths of the second upper surface 252 of the first seal band 201 and the third upper surface 262 of the second seal band 202 will be small, and the contact areas between the substrate and the first seal band 201 and the second seal band 202 may be small. Therefore, it is preferable that the opening width D1 of the first groove 203 is large enough to accommodate expected foreign matter (0.2 mm or less).

[0068] Similarly to the opening width D1, the depth H2 of the first groove 203 is preferably set to 0.001 mm or more and 0.2 mm or less so that foreign matter can be contained therein. This makes it easier to remove foreign matter contained in the first groove 203 by cleaning, since the first groove 203 is not too large.

[0069] In this exemplary embodiment, the radial width D2 of the second upper surface 252 of the first seal band 201 is equal to or less than the radial thermal contraction movement of the first seal band 201 when the ceramic member 1111a thermally contracts in the temperature range P1 of the temperature adjustment by the temperature adjustment module. In this case, the width D2 of the second upper surface 252 is shorter than the radial thermal contraction movement of the first seal band 201. As a result, by thermally contracting the ceramic member 1111a in the temperature range P1 of the temperature adjustment module, foreign matter on the first seal band 201 can be easily dropped into the first groove 203.

[0070] In this exemplary embodiment, the radial width D3 of the third upper surface 262 of the second seal band 202 is equal to or less than the radial thermal contraction movement of the second seal band 202 when the ceramic member 1111a thermally contracts in the temperature range P1 of the temperature adjustment by the temperature adjustment module. In this case, the width D3 of the third upper surface 262 is shorter than the radial thermal contraction movement of the second seal band 202. As a result, by thermally contracting the ceramic member 1111a in the temperature range P1 of the temperature adjustment module, foreign matter on the second seal band 202 can be easily dropped into the first groove 203.

[0071] When the substrate W is electrostatically attracted to the electrostatic chuck 1111, the substrate W is curved so that the center is slightly recessed from the outer periphery. As a result, the first seal band 201 comes into stronger contact with the substrate W than the second seal band 202, and foreign matter is more likely to be generated. In this exemplary embodiment, the radial width D2 of the second upper surface 252 of the first seal band 201 is set to be equal to or smaller than the radial width D3 of the third upper surface 262 of the second seal band 202, so that foreign matter can be effectively accommodated in the first groove 203.

[0072] In one embodiment, the substrate processing method may further include, before step ST1, step ST0 of changing the temperature of the electrostatic chuck 1111 to thermally expand and / or contract the electrostatic chuck 1111, as shown in FIG.

[0073] In step ST0 in one embodiment, the electrostatic chuck 1111 is heated to a second temperature higher than the first temperature, for example, the upper limit of a given temperature range P1. This causes the electrostatic chuck 1111 to thermally expand, and as a result, the first seal band 201 and the second seal band 202 move radially outward relative to the substrate W. Next, in step ST1, the substrate W is electrostatically attracted to the electrostatic chuck 1111. Thereafter, in step ST2, the electrostatic chuck 1111 is thermally contracted. At this time, the electrostatic chuck 1111 may be cooled to the first temperature or the third temperature. This causes the electrostatic chuck 1111 to thermally contract, and as a result, the first seal band 201 and the second seal band 202 move radially inward relative to the substrate W. As a result, the foreign matter B that was between the first seal band 201 and the substrate W moves radially outward on the first seal band 201, enters the first groove 203, and is removed from between the first seal band 201 and the substrate W. Also, the foreign matter B that was between the second seal band 202 and the substrate W may move radially outward on the second seal band 202 and be removed to the outside of the second seal band 202. Note that in this embodiment, the electrostatic chuck 1111 may be cooled and thermally shrunk in step ST0, and after the substrate is electrostatically attracted in step ST1, the electrostatic chuck 1111 may be heated and thermally expanded in step ST2.

[0074] According to this embodiment, since the electrostatic chuck 1111 is thermally expanded or contracted in advance before step ST1 of electrostatically attracting the substrate W, the amount of thermal expansion or contraction of the electrostatic chuck 1111 (the amount of thermal contraction movement of the first seal band 201 and the second seal band 202) in step ST2 can be increased. As a result, the foreign matter B can be effectively removed.

[0075] In the above embodiment, the electrostatic chuck 1111 is thermally expanded and contracted using a temperature control module before the substrate processing to remove foreign matter. However, the temperature fluctuation of the electrostatic chuck 1111 during the substrate processing may be used to remove foreign matter. The temperature fluctuation of the electrostatic chuck 1111 during the substrate processing may be performed by generating plasma, extinguishing plasma, adjusting the temperature of the electrostatic chuck 1111 using a temperature control module, or the like. In this case, the radial width D2 of the second upper surface 252 of the first seal band 201 may be set to be equal to or less than the radial thermal contraction movement of the first seal band 201 when the ceramic member 1111a thermally contracts in a temperature range used in the substrate processing. In addition, the radial width D3 of the third upper surface 262 of the second seal band 202 may be set to be equal to or less than the radial thermal contraction movement of the second seal band 202 when the ceramic member 1111a thermally contracts in a temperature range used in the substrate processing. Here, the temperature range used in the substrate processing may be −60° C. to 200° C. in the case of an etching process using plasma. In the case of the electrostatic chuck 1111, in which the dielectric member of the electrostatic chuck 1111 is made of alumina, aluminum nitride, or polyimide and which holds a substrate with a diameter of 300 mm, the thermal expansion / contraction movement of the first seal band 201 and the second seal band 202 in the temperature range used in the substrate processing is, for example, 0.1 mm. In this case, the radial width D2 of the second upper surface 252 and the radial width D3 of the third upper surface 262 may be 0.1 mm or less. The radial width D2 of the second upper surface 252 of the first seal band 201 may be twice or less the radial thermal contraction movement of the first seal band 201 in the temperature range used in the substrate processing. The radial width D3 of the third upper surface 262 of the second seal band 202 may be twice or less the radial thermal contraction movement of the second seal band 202 in the temperature range used in the substrate processing.

[0076] 10, the ceramic member 1111a may further include a connection portion 320 that connects the first seal band 201 and the second seal band 202. The connection portions 320 may be disposed at a plurality of locations at equal intervals along the circumferential direction of the first groove 203. That is, the first groove 203 may be formed discontinuously in the circumferential direction.

[0077] 11, the ceramic member 1111a may further include an annular third seal band 204 disposed on the outside of the second seal band 202, and a second groove 205 disposed between the second seal band 202 and the third seal band 204. In this case, the second groove 205 has a radial opening width D5 of 0.001 mm or more and 0.2 mm or less. The second groove 205 has a depth H3 within a range of 0.001 mm or more and 0.2 mm or less.

[0078] The third seal band 204 has an inner peripheral wall 350, an outer peripheral wall 351, and a fourth upper surface 352. In one embodiment, the inner peripheral wall 350 and the outer peripheral wall 351 are annular vertical surfaces. The fourth upper surface 352 is an annular flat surface. The fourth upper surface 352 connects the upper end of the inner peripheral wall 350 and the upper end of the outer peripheral wall 351. The outer peripheral wall 261 of the second seal band 202 and the inner peripheral wall 350 of the third seal band 204 are arranged to face each other in parallel and are connected by an annular flat bottom surface 370. The second groove 205 is formed by the outer peripheral wall 261, the inner peripheral wall 350, and the bottom surface 370. The second groove 205 has a rectangular cross-sectional shape. The second groove 205 may be formed to have a cross-sectional shape other than a square, such as a triangular shape, a circular arc shape, or the like.

[0079] In one embodiment, the fourth upper surface 352 is disposed at a higher position than the first upper surface 200. The bottom surface 370 is disposed at a higher position than the first upper surface 200. The fourth upper surface 352 is disposed at a position equal to or higher than the upper surface 221 of the convex portion 220. The fourth upper surface 352 is disposed at a position equal to or higher than the third upper surface 262 and the second upper surface 252. The second upper surface 252 may be disposed at a higher position than the upper surface 221 of the convex portion 220, the third upper surface 262 may be disposed at a higher position than the second upper surface 252, and the fourth upper surface 352 may be disposed at a higher position than the third upper surface 262. That is, the upper surface 221, the second upper surface 252, the third upper surface 262, and the fourth upper surface 352 of the convex portion 220 may be disposed at higher positions as they move radially outward.

[0080] The radial width D6 of the fourth upper surface 352 may be the same as the radial width D2 of the second upper surface 252 and the radial width D3 of the third upper surface 262. The radial width D3 of the third upper surface 262 may be larger than the radial width D2 of the second upper surface 252, and the radial width D6 of the fourth upper surface 352 may be larger than the radial width D3 of the third upper surface 262. That is, the radial width of the upper surface of the outer seal band may be larger than the radial width of the upper surface of the inner seal band. The radial width D7 including the first seal band 201, the second seal band 202, the first groove 203, the third seal band 204, and the second groove 205 (the length from the inner peripheral end of the first seal band 201 to the outer peripheral end of the third seal band 204) may be 0.3 mm or more and 5 mm or less. In one embodiment, the ceramic member 1111 a may further include a connection portion connecting the second seal band 202 and the third seal band 204 .

[0081] As in the above embodiment, a plurality of seal bands may be arranged in the radial direction, and a groove (recess) may be formed between adjacent seal bands. Four or more seal bands may be arranged. The electrostatic chuck 1111 includes a plurality of seal bands including at least the first seal band 201 and the second seal band 202, and a plurality of grooves formed between adjacent seal bands, and the total radial opening width of the plurality of grooves may be 5% to 15% of the total radial width of the upper surfaces of the plurality of seal bands. This ensures a contact area between the plurality of seal bands and the substrate W. In this case, the radial widths of the upper surfaces of the plurality of seal bands may all be the same or may be different from each other. The radial opening widths and depths of the plurality of grooves may all be the same or may be different from each other. That is, the plurality of seal bands may be arranged at equal intervals in the radial direction, and the intervals (groove opening widths) and / or the radial widths of the upper surfaces of the seal bands may be different between the plurality of seal bands on the inner circumference side and the plurality of seal bands on the outer circumference side.

[0082] In one embodiment, when the upper surface 221 of the convex portion 220 supporting the center of the substrate is positioned lower than the upper surfaces of the seal bands, the substrate bends downward in a convex manner and strongly contacts the upper surface of the inner seal band. In this case, foreign matter caused by friction between the substrate and the seal band may occur more on the upper surface of the inner seal band. Therefore, the grooves may be formed so as to be concentrated on the inner side of the seal bands (seal band group). That is, the radial width of the seal band located inside the radial midpoint (the radial midpoint between the inner peripheral end of the seal band located at the innermost circumference and the outer peripheral end of the seal band located at the outermost circumference) of the seal bands (seal band group) may be made smaller than the radial width of the seal band located outside the midpoint. Furthermore, the number of seal bands located inside the midpoint may be made larger than the number of seal bands located outside the midpoint. There may be only one seal band located outside the midpoint. The radial width of the seal band group (the length from the inner peripheral end of the innermost seal band to the outer peripheral end of the outermost seal band) may be 0.3 mm or more and 5 mm or less, thereby ensuring the heat transfer gas sealing performance.

[0083] In the above embodiment, the electrostatic chuck 1111 is used in a capacitively coupled plasma device, but the present invention is not limited to this and may be used in other types of plasma devices. Moreover, the electrostatic chuck 1111 is not limited to a plasma processing device and may be used in other substrate processing devices.

[0084] The embodiments of the present disclosure further include the following aspects.

[0085] (Appendix 1) a dielectric member configured to support a substrate; an electrostatic electrode disposed within the dielectric member; The dielectric member is A first top surface; a first annular seal band disposed outside the first upper surface and configured to protrude upward from the first upper surface; an annular second seal band disposed outside the first seal band and configured to protrude upward from the first upper surface; a first groove disposed between the first seal band and the second seal band; The first groove has a radial opening width of 0.001 mm or more and 0.2 mm or less. Electrostatic chuck.

[0086] (Appendix 2) The first groove has a depth of 0.001 mm or more and 0.2 mm or less. 2. The electrostatic chuck of claim 1.

[0087] (Appendix 3) the first seal band has a second upper surface; a radial width of the second upper surface is equal to or less than a radial thermal contraction movement of the first seal band when the dielectric member thermally contracts in a temperature range used in processing the substrate; 3. The electrostatic chuck according to claim 1 or 2.

[0088] (Appendix 4) the second seal band has a third upper surface; a radial width of the third upper surface is equal to or less than a radial thermal contraction movement of the second seal band when the dielectric member thermally contracts in a temperature range used in processing the substrate; 4. An electrostatic chuck according to any one of claims 1 to 3.

[0089] (Appendix 5) The dielectric member is configured so that the temperature can be adjusted within a given temperature range by a temperature adjustment unit. 3. The electrostatic chuck according to claim 1 or 2.

[0090] (Appendix 6) the first seal band has a second upper surface; a radial width of the second upper surface is equal to or less than a radial thermal contraction movement of the first seal band when the dielectric member thermally contracts in the temperature range; 6. The electrostatic chuck of claim 5.

[0091] (Appendix 7) the second seal band has a third upper surface; a radial width of the third upper surface is equal to or less than a radial thermal contraction movement of the second seal band when the dielectric member thermally contracts in the temperature range; 7. The electrostatic chuck according to claim 5 or 6.

[0092] (Appendix 8) The bottom of the first groove is positioned higher than the first upper surface. 8. An electrostatic chuck according to any one of claims 1 to 7.

[0093] (Appendix 9) the first seal band has a second upper surface; the second seal band has a third upper surface; The radial width of the second upper surface is equal to or smaller than the radial width of the third upper surface; 9. An electrostatic chuck according to any one of claims 1 to 8.

[0094] (Appendix 10) The dielectric member further has a connection portion that connects the first seal band and the second seal band. 10. An electrostatic chuck according to any one of claims 1 to 9.

[0095] (Appendix 11) The dielectric member is The first upper surface further includes a plurality of protrusions disposed on the first upper surface and protruding upward from the first upper surface, The upper surface of the protrusion is disposed at a position equal to or lower than the upper surface of the first seal band and the upper surface of the second seal band. 11. An electrostatic chuck according to any one of claims 1 to 10.

[0096] (Appendix 12) The dielectric member is an annular third seal band disposed outside the second seal band and configured to protrude upward from the first upper surface; a second groove disposed between the second seal band and the third seal band, The second groove has a radial opening width of 0.001 mm or more and 0.2 mm or less. 12. An electrostatic chuck according to any one of claims 1 to 11.

[0097] (Appendix 13) the first seal band has a second upper surface; the second seal band has a third upper surface; the third seal band has a fourth upper surface; The radial width of the fourth upper surface, the radial width of the third upper surface, and the radial width of the second upper surface are equal, or the radial width of the third upper surface is larger than the radial width of the second upper surface and the radial width of the fourth upper surface is larger than the radial width of the third upper surface. 13. The electrostatic chuck of claim 12.

[0098] (Appendix 14) A chamber; an electrostatic chuck disposed within the chamber; a temperature adjustment unit configured to adjust a temperature of the electrostatic chuck; a control unit configured to control the electrostatic chuck and the temperature adjustment unit, The electrostatic chuck comprises: a dielectric member configured to support a substrate; an electrostatic electrode disposed within the dielectric member; The dielectric member is A first top surface; a first annular seal band disposed outside the first upper surface and configured to protrude upward from the first upper surface; an annular second seal band disposed outside the first seal band and configured to protrude upward from the first upper surface; a first groove disposed between the first seal band and the second seal band; The first groove has a radial opening width of 0.001 mm or more and 0.2 mm or less, The control unit is (a) electrostatically attracting a substrate to the electrostatic chuck; (b) changing the temperature of the electrostatic chuck to which the substrate is electrostatically attracted, thereby thermally expanding and / or thermally contracting the electrostatic chuck; (c) after (a) and (b), processing the substrate on the electrostatic chuck. Substrate processing equipment.

[0099] (Appendix 15) The control unit is (d) before (a), further performing: changing a temperature of the electrostatic chuck to thermally expand and / or contract the electrostatic chuck; 15. The substrate processing apparatus of claim 14.

[0100] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments. [Explanation of symbols]

[0101] 1: plasma processing apparatus, 10: chamber, 11: substrate support, 1111: electrostatic chuck, 1111a: ceramic member, 1111b: electrostatic chuck electrode, 200: first upper surface, 201: first seal band, 202: second seal band, 203: first groove, 252: second upper surface, 262: third upper surface, D1: opening width of first groove, W: substrate

Claims

1. a dielectric member configured to support a substrate; an electrostatic electrode disposed within the dielectric member; The dielectric member is A first top surface; a first annular seal band disposed outside the first upper surface and configured to protrude upward from the first upper surface; an annular second seal band disposed outside the first seal band and configured to protrude upward from the first upper surface; a first groove disposed between the first seal band and the second seal band; The first groove has a radial opening width of 0.001 mm or more and 0.2 mm or less. Electrostatic chuck.

2. The first groove has a depth of 0.001 mm or more and 0.2 mm or less.

2. The electrostatic chuck of claim 1.

3. the first seal band has a second upper surface; a radial width of the second upper surface is equal to or less than a radial thermal contraction movement of the first seal band when the dielectric member thermally contracts in a temperature range used in processing the substrate; 2. The electrostatic chuck of claim 1.

4. the second seal band has a third upper surface; a radial width of the third upper surface is equal to or less than a radial thermal contraction movement of the second seal band when the dielectric member thermally contracts in a temperature range used in processing the substrate; 2. The electrostatic chuck of claim 1.

5. The dielectric member is configured so that the temperature can be adjusted within a given temperature range by a temperature adjustment unit.

2. The electrostatic chuck of claim 1.

6. the first seal band has a second upper surface; a radial width of the second upper surface is equal to or less than a radial thermal contraction movement of the first seal band when the dielectric member thermally contracts in the temperature range; 6. The electrostatic chuck of claim 5.

7. the second seal band has a third upper surface; a radial width of the third upper surface is equal to or less than a radial thermal contraction movement of the second seal band when the dielectric member thermally contracts in the temperature range; 6. The electrostatic chuck of claim 5.

8. The bottom of the first groove is positioned higher than the first upper surface.

2. The electrostatic chuck of claim 1.

9. the first seal band has a second upper surface; the second seal band has a third upper surface; The radial width of the second upper surface is equal to or smaller than the radial width of the third upper surface.

2. The electrostatic chuck of claim 1.

10. The dielectric member further includes a connection portion that connects the first seal band and the second seal band.

2. The electrostatic chuck of claim 1.

11. The dielectric member is a plurality of protrusions disposed on the first upper surface and protruding upward from the first upper surface; an upper surface of the protrusion is disposed at a position equal to or lower than an upper surface of the first seal band and an upper surface of the second seal band; 2. The electrostatic chuck of claim 1.

12. The dielectric member is an annular third seal band disposed outside the second seal band and configured to protrude upward from the first upper surface; a second groove disposed between the second seal band and the third seal band, The second groove has a radial opening width of 0.001 mm or more and 0.2 mm or less.

2. The electrostatic chuck of claim 1.

13. the first seal band has a second upper surface; the second seal band has a third upper surface; the third seal band has a fourth upper surface; The radial width of the fourth upper surface, the radial width of the third upper surface, and the radial width of the second upper surface are equal, or the radial width of the third upper surface is larger than the radial width of the second upper surface and the radial width of the fourth upper surface is larger than the radial width of the third upper surface.

13. The electrostatic chuck of claim 12.

14. A chamber; an electrostatic chuck disposed within the chamber; a temperature adjustment unit configured to adjust a temperature of the electrostatic chuck; a control unit configured to control the electrostatic chuck and the temperature adjustment unit, The electrostatic chuck comprises: a dielectric member configured to support a substrate; an electrostatic electrode disposed within the dielectric member; The dielectric member is A first top surface; a first annular seal band disposed outside the first upper surface and configured to protrude upward from the first upper surface; an annular second seal band disposed outside the first seal band and configured to protrude upward from the first upper surface; a first groove disposed between the first seal band and the second seal band; The first groove has a radial opening width of 0.001 mm or more and 0.2 mm or less, The control unit is (a) electrostatically attracting a substrate to the electrostatic chuck; (b) changing a temperature of the electrostatic chuck to which the substrate is electrostatically attracted, thereby thermally expanding and / or thermally contracting the electrostatic chuck; (c) after (a) and (b), processing the substrate on the electrostatic chuck. Substrate processing equipment.

15. The control unit is (d) prior to (a), the method is further configured to perform: changing a temperature of the electrostatic chuck to thermally expand and / or contract the electrostatic chuck. The substrate processing apparatus of claim 14 .

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