Crystal analysis method, crystal analysis device, semiconductor substrate, manufacturing method thereof, and semiconductor device manufacturing method

Abstract

To solve the problem that there is no method for locally calculating an anisotropic distortion of crystal in hexagonal crystal with a c-plane as a growth plane.SOLUTION: A crystal analysis method includes the steps for: obtaining Raman shift characteristics by applying a polarization Raman spectroscopy to crystal in hexagonal crystal with a c-plane as a growth plane; and calculating an anisotropic distortion of the crystal with the use of the Raman shift characteristics and a Raman shift characteristic-distortion conversion formula.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a crystal analysis method and the like. [Background technology]

[0002] There are various known methods for analyzing the amount of strain in hexagonal crystals, and among them, it is known that crystals whose growth planes are the m-plane and a-plane have anisotropic strain. In contrast, crystals whose growth planes are the c-plane are generally considered to have no anisotropic strain because the m-axis and a-axis, which are parallel to the c-plane, are equivalently arranged. On the other hand, it has been reported that crystals whose growth planes are the c-planes may also have anisotropic strain due to the crystal growth process, and for example, Non-Patent Document 1 reports that in polarized Raman measurements of GaN crystals, the peak of the E2 phonon mode (E2(high)) is separated due to anisotropic strain. [Prior art documents] [Non-patent literature]

[0003] [Non-Patent Document 1] V. Darakchieva et al., Phys. Rev., B 75, 195217(2007). Summary of the Invention [Problem to be solved by the invention]

[0004] There is no method to locally calculate the anisotropic strain of a hexagonal crystal with the c-plane as the growth plane. [Means for solving the problem]

[0005] This crystal analysis method includes a step of applying polarized Raman spectroscopy to a hexagonal crystal having a c-plane as its growth plane to obtain Raman shift characteristics, and a step of calculating the anisotropic strain of the crystal using the Raman shift characteristics and a Raman shift characteristic-strain conversion equation. Effect of the Invention

[0006] It is possible to locally calculate the anisotropic strain of a hexagonal crystal with the c-plane as the growth plane. [Brief description of the drawings]

[0007] [Figure 1] 1 is a flow chart showing a crystal analysis method. [Diagram 2] FIG. 1 is a schematic diagram showing a crystal analysis method. [Diagram 3] 1 is a graph showing two Raman spectra (wavenumber-intensity function) obtained by polarized Raman spectroscopy. [Figure 4] FIG. 1 is a schematic diagram showing polarized Raman spectroscopy. [Diagram 5] FIG. 2 is a plan view showing lattice distortion in the c-plane of a hexagonal crystal. [Figure 6] 1 is a graph showing two Raman spectra (wavenumber-intensity function) obtained by polarized Raman spectroscopy. [Figure 7] FIG. 1 is a schematic diagram showing polarized Raman spectroscopy. [Figure 8] FIG. 2 is a plan view showing lattice distortion in the c-plane of a hexagonal crystal. [Figure 9] 1 is a graph showing two Raman spectra (wavenumber-intensity function) obtained by polarized Raman spectroscopy. [Figure 10] FIG. 1 is a schematic diagram showing polarized Raman spectroscopy. [Figure 11] FIG. 2 is a plan view showing lattice distortion in the c-plane of a hexagonal crystal. [Figure 12] 1 is a graph showing two Raman spectra (wavenumber-intensity function) obtained by polarized Raman spectroscopy. [Figure 13] 1 is a graph showing two Raman spectra (wavenumber-intensity function) obtained by polarized Raman spectroscopy. [Figure 14] FIG. 2 is a plan view showing lattice distortion in the c-plane of a hexagonal crystal.

[0008] [Figure 15]1 is a graph showing two Raman spectra (wavenumber-intensity function) obtained by polarized Raman spectroscopy. [Figure 16] FIG. 1 is a schematic diagram showing polarized Raman spectroscopy. [Figure 17] FIG. 2 is a plan view showing lattice distortion in the c-plane of a hexagonal crystal. [Figure 18] 1 is a flow chart showing a crystal analysis method. [Figure 19] 1 is a block diagram showing the configuration of a crystal analysis apparatus according to an embodiment of the present invention; [Figure 20] 1 is a cross-sectional view showing a configuration of a semiconductor substrate according to an embodiment of the present invention. [Figure 21] 1 is a cross-sectional view showing a configuration of a semiconductor substrate according to an embodiment of the present invention. [Figure 22] 1 is a cross-sectional view showing a configuration of a semiconductor substrate according to an embodiment of the present invention. [Figure 23] 1 is a cross-sectional view showing a configuration of a semiconductor substrate according to an embodiment of the present invention. [Figure 24] 1 is a cross-sectional view showing a configuration of a semiconductor device according to an embodiment of the present invention. [Diagram 25] 2 is a flowchart showing a method for manufacturing a semiconductor substrate according to the present embodiment. [Figure 26] 2 is a flowchart showing a method for manufacturing a semiconductor device according to the present embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] FIG. 1 is a flowchart showing a crystal analysis method. FIG. 2 is a schematic diagram showing the crystal analysis method. As shown in FIG. 1 and FIG. 2, the crystal analysis method according to the present embodiment includes a step S30 of obtaining Raman shift characteristics by applying polarized Raman spectroscopy using polarized light Ex·Ey with different polarization directions to a hexagonal crystal 8 having a c-plane as a growth plane, and a step S40 of calculating anisotropic strain of the crystal 8 using the Raman shift characteristics obtained in the step S30 and a Raman shift characteristic-strain conversion formula. The hexagonal crystal having a c-plane as a growth plane may be a nitride semiconductor crystal. The growth plane of the crystal 8 may not be strictly parallel to the c-plane, and may have an off-angle.

[0010] By using the Raman shift characteristics obtained from polarized Raman spectroscopy and the Raman shift characteristic-strain conversion equation, it is possible to locally calculate the anisotropic strain of a hexagonal crystal with the c-plane as the growth plane. For example, compared to XRD or Raman spectroscopy using unpolarized light, it is possible to obtain anisotropic strain in a smaller area (for example, 20 nm diameter to 200 μm diameter). This makes it possible to accurately grasp the characteristics of semiconductor devices containing such crystals.

[0011] A nitride semiconductor can be expressed as, for example, AlxGayInzN (0≦x≦1; 0≦y≦1; 0≦z≦1; x+y+z=1), and specific examples include GaN-based semiconductors, AlN (aluminum nitride), InAlN (indium aluminum nitride), and InN (indium nitride). A GaN-based semiconductor is a semiconductor that contains gallium atoms (Ga) and nitrogen atoms (N), and typical examples include GaN, AlGaN, AlGaInN, and InGaN. A nitride semiconductor may be a doped type (e.g., n-type containing donors) or a non-doped type. The a-axis direction of a nitride semiconductor is, for example, the <11-20> direction, the m-axis direction is, for example, the <1-100> direction, and the c-axis direction is, for example, the <1-100> direction. <0001> The direction may be the direction of the crystal. The c-plane is a plane having the c-axis as a normal. In this embodiment, when the amounts of strain in the a-axis direction and the m-axis direction parallel to the c-plane are not equivalent, the amounts of strain in the a-axis direction and the m-axis direction can be defined as anisotropic strain.

[0012] (Embodiment 1) FIG. 3 is a graph showing two Raman spectra (wave number-intensity function) obtained by polarized Raman spectroscopy. FIG. 4 is a schematic diagram showing polarized Raman spectroscopy. FIG. 5 is a plan view showing the lattice distortion in the c-plane of a hexagonal crystal. In the polarized Raman spectroscopy of FIG. 4, a first polarized light Ex having a first direction x as a polarization direction DH and a second polarized light Ey having a second direction y different from the first direction x as a polarization direction DH are irradiated onto the crystal 8 (same local area), and the anisotropic distortion of the crystal 8 is calculated using the peak wave number ω1 of the first Raman shift spectrum SP1 obtained by the first polarized light Ex and the peak wave number ω2 of the second Raman shift spectrum SP2 obtained by the second polarized light Ey. The angle between the first and second directions x·y may be, for example, 30°, 60°, 45°, or 90°.

[0013] In the first embodiment, as shown in FIGS. 3 to 5 , the crystal 8 is a nitride semiconductor crystal, the polarization direction DH of the first polarized light Ex is a first direction x, the polarization direction DH of the second polarized light Ey is a second direction y, and the polarization direction of the output light Sx extracted from the Raman scattered light is the first direction x, the first direction x and the second direction y are orthogonal to each other, the first direction x is aligned with the a-axis direction of the crystal 8, and the second direction y is aligned with the m-axis direction of the crystal 8, and further, the peak wavenumber of the first Raman shift spectrum SP1 is ωx, the peak wavenumber of the second Raman shift spectrum SP2 is ωy, the strain of the crystal 8 in the first direction x is εx, and the strain of the crystal 8 in the second direction y is εy, where εx<εy holds when ωx>ωy, and εx>εy holds when ωx<ωy.

[0014] In the first embodiment, if the anisotropic strain of the crystal 8 is a tensile strain in the m-axis direction, ωx>ωy, and if the anisotropic strain of the crystal 8 is a compressive strain in the m-axis direction, ωx<ωy. This can be determined by, for example, measuring the anisotropic strain (tensile or compressive strain in the m-axis direction) in a wide range in advance by the XRD method, and applying polarized Raman spectroscopy to a local area (spot) within that wide range to obtain the magnitude relationship of the peak wavenumbers ωx·ωy.

[0015] The peak wave number ωf of the E2 phonon mode is given by the secular equation as follows: εxy is the shear strain of the crystal 8, εz is the strain in the z direction (c-axis direction) of the crystal 8, and ωo is the strain-free wave number of the crystal 8. If the three phonon deformation potentials corresponding to the three axes in the x, y, and z directions are a, b, and c, then ωf-ωo=a×(εx+εy)+b×εz±c [(εx-εy) 2 +4×εxy 2 〕 1 / 2 Here, the shear strain εxy of the crystal 8 is zero, the stress in the z direction of the crystal 8 is zero, and the stiffness constant ratio (C 13 / C 33 ) as r, ωf-ωo=(ar×b)×(εx+εy)±c×|εx-εy| holds.

[0016] Therefore, as described above, if ωx>ωy, then εx<εy, and if ωx<ωy, then εx>εy, the following first and second equations hold. ωx-ωo=(ar×b)×(εx+εy)-c(εx-εy)...1st equation ωy-ωo=(ar×b)×(εx+εy)+c(εx-εy)···Second formula From the Raman shift characteristic-strain conversion equation expressed by the first and second equations, the strain εx in the first direction x and the strain εy in the second direction y can be obtained. -1 〕<ωo<574〔cm -1 〕,b <a<0<c,0<r<1であってよく、ωxおよびωyそれぞれが、562~572〔cm -1 ] may be in the wavenumber range.

[0017] In FIG. 4, the crystal 8 is located above the template substrate 7 including the seed region SA and the growth inhibition region DA, and the crystal 8 includes a base portion B1 located above the seed region SA and a wing portion W1 located above the growth inhibition region. The template substrate 7 includes a silicon wafer as the main substrate 1, a nitride semiconductor (e.g., AlN) as the underlayer 4, and a mask portion 5 (e.g., a silicon-based mask) as the growth inhibition region DA. A part of the underlayer 4 exposed in a portion (opening) where the mask portion 5 does not exist becomes the seed region SA. The seed region SA may have a shape with the second direction y as the longitudinal direction. The seed region SA may be the surface (upper surface) of the seed portion (e.g., a nitride semiconductor layer) included in the underlayer 4.

[0018] The crystal 8 is obtained by growing GaN ELO (lateral overgrowth: in the a-axis direction, which is the first direction) above the growth inhibition region DA starting from the seed region SA. The wing portion W1 may include an edge 8E located above the growth inhibition region DA (5) (in a form in which GaN growing in the opposite direction above the growth inhibition region DA does not meet with each other). The threading dislocation density of the wing portion W1 may be 1 / 5 or less, 1 / 10 or less, 1 / 50 or less, 1 / 100 or less, or 1 / 300 or less of the threading dislocation density of the base portion B1 (on the seed region SA). The threading dislocation density on the surface of the wing portion W1 may be less than 2×10 7 / cm 2 Below, 5×10 6 / cm 2 Less than or equal to 1×10 6 / cm 2 It may be the following:

[0019] As an example of Figure 4, ωo=567.4 [cm -1 〕, a=-850〔cm -1 〕, b=-920〔cm -1 〕, c=65〔cm -1], r=93.4 [GPa] / 391.0 [GPa], and in the wing portion W1, εx=-0.01 [%], εy=+0.17 [%]. As shown in Fig. 5, when εx<εy, the lattice 8L of the crystal 8 is deformed into a vertically elongated shape with respect to the bulk lattice BL by the tensile external force F in the second direction y (m-axis direction), which is the vertical direction.

[0020] In the first embodiment, the anisotropic strain of the wing portion W1, which is a low defect portion, is calculated, but the present invention is not limited to this, and the anisotropic strain of the base portion B1 and the wing portion W1 may be calculated.

[0021] 3 to 5, the crystal 8 is a GaN crystal, but is not limited to this. The crystal 8 can also be an AlN crystal, an AlGaN crystal, or an InGaN crystal.

[0022] In the first embodiment, the polarized Raman spectrometer is a RENISHAW inVia Raman microspot (excitation light source is a Nd:YAG laser (λ=532 nm), wave number resolution is 0.3 cm -1 The focal length was 250 mm, the grating was 3000 lines / mm, and the laser power was 2.5 mW.

[0023] (Embodiment 2) Fig. 6 is a graph showing two Raman spectra (wave number-intensity functions) obtained by polarized Raman spectroscopy. Fig. 7 is a schematic diagram showing polarized Raman spectroscopy. Fig. 8 is a plan view showing the lattice distortion in the c-plane of a hexagonal crystal.

[0024] In FIG. 7, the crystal 8 is located above the template substrate 7 including the seed region SA and the growth inhibition region DA, and the crystal 8 includes a base portion B1 located above the seed region SA and a wing portion W1 located above the growth inhibition region. The template substrate 7 includes a sapphire wafer as the main substrate 1 and a mask portion 5 (e.g., a silicon-based mask) as the growth inhibition region DA. A part of the sapphire wafer exposed in a portion (opening) where the mask portion 5 does not exist becomes the seed region SA. The seed portion SA may have a shape with the second direction y as its longitudinal direction. The crystal 8 is obtained by ELO (lateral overgrowth: growing in the a-axis direction, which is the first direction) of GaN above the growth inhibition region DA starting from the seed region SA.

[0025] As an example of Figure 6, ωo = 567.4 [cm -1 〕, a=-850〔cm -1 〕, b=-920〔cm -1 〕, c=65〔cm -1 ], r=93.4 [GPa] / 391.0 [GPa], and in the wing portion W1, εx=+0.02 [%], εy=-0.15 [%]. As shown in Fig. 5, when εy<εx, the lattice 8L of the crystal 8 is deformed into a horizontally elongated shape with respect to the bulk lattice BL by the compressive external force F in the second direction y (m-axis direction), which is the vertical direction.

[0026] In the second embodiment, the anisotropic strain of the wing portion W1, which is a low defect portion, is calculated. However, the present invention is not limited to this, and the anisotropic strain of the base portion B1 and the wing portion W1 may be calculated.

[0027] (Embodiment 3) FIG. 9 is a graph showing two Raman spectra (wave number-intensity function) obtained by polarized Raman spectroscopy. FIG. 10 is a schematic diagram showing polarized Raman spectroscopy. FIG. 11 is a plan view showing lattice distortion. The crystal 8 in FIG. 10 is a bulk crystal GB (free standing) of GaN, where ωx=ωy=ωo, εx=0.00 [%], and εy=-0.00 [%]. As shown in FIG. 11, the bulk lattice BL with εy=εx=0 is a regular hexagon.

[0028] (Embodiment 4) Fig. 12 is a graph showing two Raman spectra (wave number-intensity functions) obtained by polarized Raman spectroscopy. Fig. 13 is a schematic diagram showing polarized Raman spectroscopy. Fig. 14 is a plan view showing lattice distortion in the c-plane of a hexagonal crystal.

[0029] In Fig. 13, the crystal 8 is formed above an underlayer 4 (e.g., AlN) on a silicon wafer, which is a main substrate 1. As an example of Fig. 13, -1 〕, a=-850〔cm -1 〕, b=-920〔cm -1 〕, c=65〔cm -1 ], r=93.4 [GPa] / 391.0 [GPa], and for example, in the center, εx=+0.18 [%], εy=+0.31 [%]. As shown in Fig. 14, when εy ≒ εx>0, the lattice 8L of the crystal 8 is deformed into a shape expanded in the vertical and horizontal directions from the bulk lattice BL by the tensile external force F in the first direction (a-axis direction) which is the horizontal direction and the second direction y (m-axis direction) which is the vertical direction.

[0030] (Embodiment 5) Fig. 15 is a graph showing two Raman spectra (wave number-intensity functions) obtained by polarized Raman spectroscopy. Fig. 16 is a schematic diagram showing polarized Raman spectroscopy. Fig. 17 is a plan view showing lattice distortion in the c-plane of a hexagonal crystal.

[0031] In Fig. 16, the crystal 8 is formed on a sapphire wafer which is a main substrate 1. As an example of Fig. 16, -1 〕, a=-850〔cm -1 〕, b=-920〔cm -1 〕, c=65〔cm -1 ], r=93.4 [GPa] / 391.0 [GPa], and for example, in the center, εx=-0.20 [%], εy=-0.19 [%]. As shown in Fig. 17, when εy ≒ εx < 0, the lattice 8L of the crystal 8 is deformed into a shape that is reduced in the vertical and horizontal directions from the bulk lattice BL by the compressive external force F in the first direction (a-axis direction) which is the horizontal direction and the second direction y (m-axis direction) which is the vertical direction.

[0032] (Embodiment 6) FIG. 18 is a flow chart showing a crystal analysis method. As shown in FIG. 18, after steps S30 and S40, a mapping step S45 may be performed in which the half-widths of a plurality of Raman shift spectra obtained by irradiating a plurality of points on the growth surface of the crystal 8 with light are associated with a plurality of irradiated points. The difference (half-width difference) from the half-width in the case of no strain (e.g., GaN bulk) may be mapped. A step S47 may be performed in which the anisotropic strain of the crystal 8 calculated in step S40 is combined with the result of the mapping in step S45 to obtain an in-plane distribution of the anisotropic strain. Step S45 may be performed before steps S30 and S40. The Raman shift spectra in steps S30 and S45 may be obtained using the same polarized Raman spectrometer.

[0033] (Embodiment 7) 19 is a block diagram showing the configuration of a crystal analysis device according to this embodiment. The crystal analysis device 50 calculates the anisotropic strain of the crystal 8 by using the Raman shift characteristic obtained by applying polarized Raman spectroscopy to a hexagonal crystal 8 having a c-plane as a growth plane and a Raman shift characteristic-strain conversion formula. The crystal analysis device 50 may include an input unit 70 that receives a plurality of Raman shift spectra (spectral data) obtained from the polarized Raman spectroscopy device 60 (described above) and a processing unit 80 that calculates the anisotropic strain of the crystal 8, and may further include a display unit that displays the calculated anisotropic strain.

[0034] (Embodiment 8) 20 and 21 are cross-sectional views showing the configuration of a semiconductor substrate according to this embodiment. As shown in FIG. 20 and FIG. 21, the semiconductor substrate 10 includes a template substrate 7 including a seed region SA and a growth inhibition region DA, and a semiconductor portion SB located above the template substrate 7. The semiconductor portion SB includes a base portion B1 located above the seed region SA and a wing portion W1 located above the growth inhibition region DA. The growth inhibition region DA may be a mask portion 5 including at least one of silicon oxide and silicon nitride. The underlayer 4 on the main substrate 1 may be a nitride semiconductor (e.g., AlN). The growth inhibition region DA is not limited to the mask portion 5, and the growth inhibition region DA may be a modified layer of the underlayer 4 (e.g., an AlN modified layer by ion plasma). The modified layer of the underlayer 4 and the wing portion W1 may face each other via a gap. Examples of the main substrate 1 include a silicon wafer, a silicon carbide wafer, a sapphire wafer, an aluminum nitride wafer, and a diamond wafer.

[0035] The semiconductor portion SB is a hexagonal crystal with the c-plane as the growth plane, obtained by ELO (extended lateral overgrowth) of a nitride semiconductor (e.g., a GaN-based semiconductor) from the seed region SA of the template substrate 7. By applying polarized Raman spectroscopy to the semiconductor portion SB(8), anisotropic strain can be obtained.

[0036] In the semiconductor substrate 10, the strain in the a-axis direction of the wing portion W1 of the semiconductor portion SB is εx, and the strain in the m-axis direction of the wing portion W1 is εy, where εx<0 and εy>0. The template substrate 7 includes a silicon wafer as the main substrate 1, and may be 0.05%<εy<0.23%, or may be −0.02%<εx<−0.005%. In the semiconductor substrate 10, a gap JD may be located between the wing portion W1 and the growth inhibition region DA, as shown in FIG.

[0037] 22 and 23 are cross-sectional views showing the configuration of a semiconductor substrate according to this embodiment. As shown in FIG. 22 and FIG. 23, the semiconductor substrate 10 may be located above the semiconductor portion SB and include a functional layer DL including an active layer KL. The functional layer DL is a hexagonal crystal having the c-plane of the semiconductor portion SB as a growth plane, and polarized Raman spectroscopy may be applied to the functional layer DL(8) to obtain anisotropic strain of the functional layer DL(8). The active layer KL may be a stacked structure (e.g., a quantum well structure) of GaN-based semiconductor layers, and anisotropic strain of the active layer KL may be obtained.

[0038] Fig. 24 is a cross-sectional view showing the configuration of a semiconductor device according to this embodiment. As shown in Fig. 24, for example, polarized Raman spectroscopy may be applied to the semiconductor portion SB(8) or the functional layer DL(8) included in the semiconductor device 20 transferred to the support substrate SK to obtain the anisotropic strain of the semiconductor portion SB or the functional layer DL. The active layer KL may be a light-emitting layer that emits light having polarization characteristics. The semiconductor device 20 may be a light-emitting element such as an LED or a laser, or a control element such as a transistor.

[0039] (Embodiment 9) Fig. 25 is a flowchart showing a method for manufacturing a semiconductor substrate according to the present embodiment. As shown in Fig. 25, the method for manufacturing a semiconductor substrate includes a step S21 of preparing a template substrate 7, a step S23 of forming a semiconductor portion SB (8) which is a hexagonal crystal having a c-plane as a growth plane above the template substrate 7, a step S30 of applying polarized Raman spectroscopy to the semiconductor portion SB to obtain a Raman shift characteristic, and a step S40 of calculating anisotropic strain of the semiconductor portion SB using the Raman shift characteristic and a Raman shift characteristic-strain conversion formula.

[0040] Fig. 26 is a flow chart showing a method for manufacturing a semiconductor device according to the present embodiment. As shown in Fig. 26, the method for manufacturing the semiconductor substrate includes a step S25 of preparing a semiconductor substrate 10, a step S27 of forming a functional layer DL (8) which is a hexagonal crystal including an active layer KL and has a c-plane as a growth plane above the semiconductor substrate 10, a step S30 of applying polarized Raman spectroscopy to the functional layer DL to obtain Raman shift characteristics, and a step S40 of calculating anisotropic strain of the functional layer DL using the Raman shift characteristics and a Raman shift characteristic-strain conversion formula.

[0041] (Additional items) The above disclosure is intended to be illustrative and explanatory, and is not intended to be limiting. Based on these examples and descriptions, many variations will be obvious to those skilled in the art, so please note that these variations are also included in the embodiments. [Explanation of symbols]

[0042] 1 Main Board 4 Base layer 5 Mask section 7 Template Substrate 8 (hexagonal crystal with the c-plane as the growth plane) 10. Semiconductor Substrate 20 Semiconductor Devices Ex 1st polarization Ey 2nd Polarization Sx Raman scattering light B1 base W1 Wing section SB(8) Semiconductor Division JD void DL(8) Functional Layer

Claims

1. A step of applying polarized Raman spectroscopy to a hexagonal crystal having a c-plane as a growth plane to obtain Raman shift characteristics; and calculating anisotropic strain of the crystal using the Raman shift characteristic and a Raman shift characteristic-strain conversion equation.

2. In the polarized Raman spectroscopy, a first polarized light having a polarization direction in a first direction and a second polarized light having a polarization direction in a second direction different from the first direction are irradiated onto the crystal, 2. The crystal analysis method according to claim 1, wherein anisotropic strain of the crystal is calculated using a peak wave number of a first Raman shift spectrum obtained by the first polarized light and a peak wave number of a second Raman shift spectrum obtained by the second polarized light.

3. The crystal analysis method according to claim 2 , wherein the first direction and the second direction are perpendicular to each other.

4. The hexagonal crystal is a nitride semiconductor crystal. The crystal analysis method according to claim 3 , wherein the first direction is aligned with an a-axis direction of the nitride semiconductor crystal, and the second direction is aligned with an m-axis direction of the nitride semiconductor crystal.

5. a polarization direction of an output light extracted from the Raman scattered light due to the first polarized light and the second polarized light is the first direction, The peak wave number of the first Raman shift spectrum is ωx, The peak wave number of the second Raman shift spectrum is ωy, The strain of the crystal in the first direction is εx, The strain of the crystal in the second direction is defined as εy, 5. The method of claim 4, wherein, if ωx>ωy, then εx<εy.

6. 6. The crystal analysis method according to claim 5, wherein when the anisotropic strain of the crystal is a tensile strain in the m-axis direction, ωx>ωy.

7. 6. The method of claim 5, wherein if ωx<ωy, then εx>εy.

8. 8. The crystal analysis method according to claim 7, wherein when the anisotropic strain of the crystal is a compressive strain in the m-axis direction, ωx<ωy.

9. The shear strain of the crystal is zero, The stress in the thickness direction of the crystal is zero. The distortion-free wave number of the crystal is ωo, The stiffness constant ratio of the crystal is r, Three phonon deformation potentials corresponding to the three axes in the first and second directions and the thickness direction are a, b, and c, ωx−ωo=(a−r×b)×(εx+εy)−c(εx−εy) as the first equation, As the second equation, ωy-ωo=(a-r×b)×(εx+εy)+c(εx-εy), 8. The crystal analysis method according to claim 7, wherein εx and εy are determined from the Raman shift characteristic-strain conversion equations expressed by the first and second equations.

10. 10. The method of claim 9, wherein, in the crystal, 557<ωo<574, b<a<0<c, and 0<r<1.

11. ωx and ωy are each 562 to 572 [cm －１ The crystal analysis method according to any one of claims 5 to 10, wherein the wave number range is

12. The crystal analysis method according to any one of claims 1 to 10, wherein the crystal is a GaN crystal, an AlN crystal, an AlGaN crystal, or an InGaN crystal.

13. The crystal analysis method according to claim 1 , further comprising the step of: mapping a plurality of half-widths of Raman shift spectra obtained by irradiating a plurality of points on the growth surface with light so as to correspond to the plurality of points.

14. The crystal analysis method according to claim 13 , wherein the calculated anisotropic strain of the crystal is combined with a result of the mapping to obtain an in-plane distribution of the anisotropic strain.

15. the crystal is positioned above a template substrate including a seed region and a growth inhibition region; 11. The method of claim 1, wherein the crystal comprises a base portion located above a seed region and a wing portion located above the growth inhibition region.

16. The method of claim 15 , wherein a gap is located between the wing portion and the growth inhibition region.

17. The method of claim 15 , wherein the wing portion includes an edge located above the growth inhibition region.

18. The crystal analysis method according to claim 15 , further comprising obtaining anisotropic strain in at least one of the base portion and the wing portion.

19. the crystal is a functional layer including an active layer, the functional layer being located above a semiconductor portion having a base and wing portions laterally grown from the base; The crystal analysis method according to any one of claims 1 to 10, further comprising obtaining anisotropic strain of the functional layer.

20. A crystal analysis device that calculates the anisotropic strain of a hexagonal crystal having a c-plane as its growth plane by applying polarized Raman spectroscopy to the crystal to obtain Raman shift characteristics and using a Raman shift characteristic-strain conversion equation.

21. 21. The crystal analysis instrument according to claim 20, further comprising an input unit for receiving a plurality of Raman shift spectra obtained from a polarized Raman spectroscopy instrument, and a processing unit for calculating anisotropic strain of the crystal.

22. a template substrate including a seed region and a growth inhibition region; a semiconductor portion including a base portion located above a seed region and a wing portion located above the growth inhibition region; the semiconductor portion is a hexagonal crystal having a c-plane as a growth plane, The strain in the a-axis direction of the wing portion is εx, The strain in the m-axis direction of the wing portion is defined as εy, A semiconductor substrate, wherein εx<0 and εy>0.

23. The semiconductor substrate of claim 22 , wherein an air gap is located between the wing portion and the growth inhibition region.

24. the template substrate comprises a silicon wafer; 24. The semiconductor substrate according to claim 22, wherein 0.05%<εy<0.23%.

25. providing a template substrate; forming a semiconductor portion, which is a hexagonal crystal having a c-plane as a growth plane, above a template substrate; applying polarized Raman spectroscopy to the semiconductor portion to obtain a Raman shift characteristic; and calculating anisotropic strain of the semiconductor portion using the Raman shift characteristic and a Raman shift characteristic-strain conversion equation.

26. Providing a semiconductor substrate; forming a functional layer, which includes an active layer and is a hexagonal crystal having a c-plane as a growth plane, above the semiconductor substrate; applying polarized Raman spectroscopy to the functional layer to obtain Raman shift characteristics; A method for manufacturing a semiconductor device comprising the step of calculating anisotropic strain of the functional layer using the Raman shift characteristic and a Raman shift characteristic-strain conversion equation.

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