Semiconductor device manufacturing method and semiconductor manufacturing device

Abstract

To provide a semiconductor device manufacturing method that manufactures a semiconductor device having excellent characteristics.SOLUTION: A semiconductor device manufacturing method according to an embodiment performs at least either one selected from a group constituted of a first process in which a first conductive film including indium (In) is formed on a substrate; a first insulating film is formed on the first conductive film; a second conductive film is formed on the first insulating film; a second insulating film is formed on the second conductive film; an opening part penetrating through the second insulating film, the second conductive film and the first insulating film to reach the first conductive film is formed; a third insulating film contacting a bottom surface and a side surface of the opening part is formed in the opening part; the third insulating film at a bottom of the opening part is removed to expose the first conductive film at the bottom of the opening part; and first gas including silicon (Si) is used, and a second process in which second gas including oxygen (O) is used, so as to form a semiconductor film in the opening part, without exposing the substrate into an environment whose pressure is equal to or above atmospheric pressure, after performing the at least either one process.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] An embodiment of the present invention relates to a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus. [Background technology]

[0002] An oxide semiconductor transistor having a channel formed in an oxide semiconductor layer has an excellent characteristic of having an extremely small channel leakage current during off-state operation, and therefore can be used as a switching transistor of a memory cell of a dynamic random access memory (DRAM), for example. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent Application Publication No. 2022 / 0157354 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a semiconductor device manufacturing method and semiconductor manufacturing apparatus which manufacture semiconductor devices having excellent characteristics. [Means for solving the problem]

[0005] In a method for manufacturing a semiconductor device according to an embodiment, a first conductive film containing indium (In) is formed on a substrate, a first insulating film is formed on the first conductive film, a second conductive film is formed on the first insulating film, a second insulating film is formed on the second conductive film, an opening is formed through the second insulating film, the second conductive film, and the first insulating film to reach the first conductive film, a third insulating film is formed in the opening so as to contact a bottom and a side surface of the opening, the third insulating film at the bottom of the opening is removed to expose the first conductive film at the bottom of the opening, at least one of the processes selected from the group consisting of a first process using a first gas containing silicon (Si) and a second process using a second gas containing oxygen (O), and after the at least one of the processes, a semiconductor film is formed in the opening without exposing the substrate to an atmosphere at atmospheric pressure or higher. [Brief description of the drawings]

[0006] [Figure 1] 1 is a schematic cross-sectional view of a semiconductor device manufactured by a method for manufacturing a semiconductor device according to a first embodiment. [Diagram 2] 1 is a schematic cross-sectional view of a semiconductor device manufactured by a method for manufacturing a semiconductor device according to a first embodiment. [Diagram 3] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the first embodiment. [Figure 4] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the first embodiment. [Diagram 5] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the first embodiment. [Figure 6] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the first embodiment. [Figure 7] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the first embodiment. [Figure 8] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the first embodiment. [Figure 9] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the first embodiment. [Figure 10]3A to 3C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the first embodiment. [Figure 11] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the first embodiment. [Figure 12] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the second embodiment. [Figure 13] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the second embodiment. [Figure 14] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the second embodiment. [Figure 15] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the second embodiment. [Figure 16] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the second embodiment. [Figure 17] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing method of the semiconductor device according to the second embodiment. [Figure 18] FIG. 13 is a schematic diagram of a semiconductor manufacturing apparatus according to a third embodiment. [Figure 19] FIG. 13 is a schematic diagram of a semiconductor manufacturing apparatus according to a fourth embodiment. [Figure 20] FIG. 13 is a schematic diagram of a semiconductor manufacturing apparatus according to a modified example of the fourth embodiment. [Figure 21] FIG. 13 is a schematic diagram of a semiconductor manufacturing apparatus according to a fifth embodiment. [Figure 22] FIG. 13 is a schematic diagram of a semiconductor manufacturing apparatus according to a sixth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following description, the same reference numerals will be used to designate the same or similar components, and the description of components that have already been described may be omitted as appropriate.

[0008] In addition, in this specification, the terms "upper", "lower", "upper part", and "lower part" may be used for convenience. "Upper", "lower", "upper part", and "lower part" are terms that indicate the relative positional relationship in the drawings, and are not terms that define the positional relationship with respect to gravity.

[0009] The qualitative and quantitative analysis of the chemical composition of the members constituting the semiconductor device in this specification can be performed, for example, by secondary ion mass spectrometry (SIMS), energy dispersive X-ray spectroscopy (EDX), and Rutherford back-scattering spectroscopy (RBS). In addition, for measuring the thickness of the members constituting the semiconductor device, the distance between the members, the crystal grain size, and the like, for example, a transmission electron microscope (TEM) can be used. In addition, for identifying the constituent materials of the members constituting the semiconductor device and measuring the abundance ratio of the constituent materials, for example, X-ray photoelectron spectroscopy (XPS), hard X-ray photoelectron spectroscopy (HAXPES), and electron energy loss spectroscopy (EELS) can be used.

[0010] (First embodiment) A method for manufacturing a semiconductor device according to a first embodiment includes forming a first conductive film containing indium (In) on a substrate, forming a first insulating film on the first conductive film, forming a second conductive film on the first insulating film, forming a second insulating film on the second conductive film, forming an opening that penetrates the second insulating film, the second conductive film, and the first insulating film and reaches the first conductive film, forming a third insulating film in the opening so as to contact a bottom and a side of the opening, removing the third insulating film at the bottom of the opening to expose the first conductive film at the bottom of the opening, performing at least one of the processes selected from the group consisting of a first process using a first gas containing silicon (Si) and a second process using a second gas containing oxygen (O), and forming a semiconductor film in the opening without exposing the substrate to an atmosphere of atmospheric pressure or higher after at least one of the processes.

[0011] Figures 1 and 2 are schematic cross-sectional views of a semiconductor device manufactured by the semiconductor device manufacturing method of the first embodiment. Figure 2 is a cross-sectional view taken along line AA' in Figure 1. In Figure 1, the up-down direction is referred to as a first direction. In Figure 1, the left-right direction is referred to as a second direction. The second direction intersects with the first direction and is, for example, perpendicular to the first direction.

[0012] The semiconductor device manufactured by the semiconductor device manufacturing method of the first embodiment is a transistor 100. The transistor 100 is an oxide semiconductor transistor in which a channel is formed in an oxide semiconductor. In the transistor 100, a gate electrode surrounds an oxide semiconductor layer in which the channel is formed. The transistor 100 is a so-called Surrounding Gate Transistor (SGT). The transistor 100 is a so-called vertical transistor.

[0013] The transistor 100 includes a substrate 10, a bottom electrode 12, a top electrode 14, an oxide semiconductor layer 16, a gate electrode 18, a gate insulating layer 20, a bottom insulating layer 22, and a top insulating layer 24.

[0014] The substrate 10 is, for example, a semiconductor substrate. An insulating layer, for example, is provided on the surface of the substrate 10. The insulating layer is, for example, silicon oxide.

[0015] The lower electrode 12 is provided on a substrate 10. The lower electrode 12 is provided under an oxide semiconductor layer 16. The lower electrode 12 is electrically connected to the oxide semiconductor layer 16. The lower electrode 12 is in contact with the oxide semiconductor layer 16. The lower electrode 12 functions as a source electrode or a drain electrode of the transistor 100.

[0016] The lower electrode 12 is a conductor containing indium (In). The lower electrode 12 includes, for example, an oxide conductor containing indium (In).

[0017] The lower electrode 12 includes, for example, indium (In), tin (Sn), and oxygen (O). The lower electrode 12 includes, for example, indium tin oxide. The lower electrode 12 is, for example, an indium tin oxide layer.

[0018] The upper electrode 14 is provided on the oxide semiconductor layer 16. The upper electrode 14 is electrically connected to the oxide semiconductor layer 16. The upper electrode 14 is in contact with, for example, the oxide semiconductor layer 16. The upper electrode 14 functions as a source electrode or a drain electrode of the transistor 100.

[0019] The upper electrode 14 is a conductor. The upper electrode 14 includes, for example, an oxide conductor. The upper electrode 14 is, for example, an oxide conductor layer.

[0020] The upper electrode 14 includes, for example, indium (In), tin (Sn), and oxygen (O). The upper electrode 14 includes, for example, indium tin oxide. The upper electrode 14 is, for example, an indium tin oxide layer.

[0021] The upper electrode 14 includes, for example, tin (Sn) and oxygen (O). The upper electrode 14 includes, for example, tin oxide. The upper electrode 14 is, for example, a tin oxide layer.

[0022] The upper electrode 14 includes, for example, a metal and is, for example, a metal layer.

[0023] The upper electrode 14 includes, for example, tungsten (W), molybdenum (Mo), copper (Cu), aluminum (Al), titanium (Ti), or tantalum (Ta). The upper electrode 14 is, for example, a tungsten layer, a molybdenum layer, a copper layer, an aluminum layer, a titanium layer, or a tantalum layer.

[0024] The lower electrode 12 and the upper electrode 14 are formed of, for example, the same material. The lower electrode 12 and the upper electrode 14 are, for example, oxide conductors containing indium (In), tin (Sn), and oxygen (O). The lower electrode 12 and the upper electrode 14 contain, for example, indium tin oxide. The lower electrode 12 and the upper electrode 14 are, for example, indium tin oxide layers.

[0025] The oxide semiconductor layer 16 is provided between the lower electrode 12 and the upper electrode 14. The oxide semiconductor layer 16 is in contact with, for example, the lower electrode 12. The oxide semiconductor layer 16 is in contact with, for example, the upper electrode 14.

[0026] In the oxide semiconductor layer 16, a channel that serves as a current path is formed when the transistor 100 is in an on-state.

[0027] The oxide semiconductor layer 16 is an oxide semiconductor. The oxide semiconductor layer 16 is, for example, amorphous.

[0028] The oxide semiconductor layer 16 contains, for example, at least one element selected from the group consisting of indium (In), gallium (Ga), silicon (Si), aluminum (Al), and tin (Sn), zinc (Zn), and oxygen (O). The oxide semiconductor layer 16 contains, for example, indium (In), gallium (Ga), zinc (Zn), and oxygen (O). The oxide semiconductor layer 16 contains, for example, indium gallium zinc oxide. The oxide semiconductor layer 16 is, for example, an indium gallium zinc oxide layer.

[0029] The oxide semiconductor layer 16 contains, for example, at least one element selected from the group consisting of titanium (Ti), zinc (Zn), and tungsten (W), and oxygen (O). The oxide semiconductor layer 16 contains, for example, titanium oxide, zinc oxide, or tungsten oxide. The oxide semiconductor layer 16 is, for example, a titanium oxide layer, a zinc oxide layer, or a tungsten oxide layer.

[0030] The length of the oxide semiconductor layer 16 in the first direction is, for example, not less than 80 nm and not more than 200 nm, and the length of the oxide semiconductor layer 16 in the second direction is, for example, not less than 20 nm and not more than 100 nm.

[0031] The first direction is a direction from the lower electrode 12 to the upper electrode 14. The second direction intersects with the first direction and is, for example, a direction perpendicular to the first direction.

[0032] The gate electrode 18 faces the oxide semiconductor layer 16. As shown in FIG.

[0033] The gate electrode 18 is a conductor. The gate electrode 18 is, for example, a metal, a metal compound, or a semiconductor. The gate electrode 18 includes, for example, tungsten (W).

[0034] The length of the gate electrode 18 in the first direction is, for example, not less than 20 nm and not more than 100 nm.

[0035] The gate insulating layer 20 is provided between the oxide semiconductor layer 16 and the gate electrode 18. The gate insulating layer 20 is provided to surround the oxide semiconductor layer 16. The gate insulating layer 20 is provided between the lower electrode 12 and the upper electrode 14.

[0036] The gate insulating layer 20 is, for example, an oxide, a nitride, or an oxynitride. The gate insulating layer 20 includes, for example, silicon oxide, aluminum oxide, silicon nitride, aluminum nitride, or silicon oxynitride. The gate insulating layer 20 is, for example, a silicon oxide layer, an aluminum oxide layer, a silicon nitride layer, an aluminum nitride layer, or a silicon oxynitride layer.

[0037] The gate insulating layer 20 may have, for example, a laminated structure. The gate insulating layer 20 has, for example, a laminated structure of a nitride and an oxide. The gate insulating layer 20 has, for example, a laminated structure of a silicon nitride layer and a silicon oxide layer. The thickness of the gate insulating layer 20 is, for example, 2 nm or more and 10 nm or less.

[0038] The lower insulating layer 22 is provided on the lower electrode 12. The lower insulating layer 22 is provided between the lower electrode 12 and the gate electrode 18.

[0039] The upper insulating layer 24 is provided on the gate electrode 18. The upper insulating layer 24 is provided between the gate electrode 18 and the upper electrode 14, for example.

[0040] The upper insulating layer 24 is an insulator. The upper insulating layer 24 is, for example, an oxide, a nitride, or an oxynitride. The upper insulating layer 24 includes, for example, silicon (Si) and oxygen (O). The upper insulating layer 24 includes, for example, silicon oxide. The upper insulating layer 24 is, for example, a silicon oxide layer.

[0041] Next, an example of a method for manufacturing the semiconductor device of the first embodiment will be described.

[0042] Figures 3, 4, 5, 6, 7, 8, 9, 10, and 11 are schematic cross-sectional views showing an example of a method for manufacturing the semiconductor device of the first embodiment. Each of Figures 3 to 11 shows a cross section corresponding to Figure 1. Figures 3 to 11 are views showing an example of a method for manufacturing a transistor 100.

[0043] Below, an example will be described in which the lower electrode 12 is an indium tin oxide layer, the upper electrode 14 is an indium tin oxide layer, the oxide semiconductor layer 16 is an indium gallium zinc oxide layer, the gate electrode 18 is a tungsten layer, the gate insulating layer 20 is a silicon oxide layer, the lower insulating layer 22 is a silicon oxide layer, and the upper insulating layer 24 is a silicon oxide layer.

[0044] First, a first indium tin oxide film 31, a first silicon oxide film 33, a tungsten film 34, and a second silicon oxide film 35 are laminated in this order in a first direction on a substrate 10 (FIG. 3). The first indium tin oxide film 31, the first silicon oxide film 33, the tungsten film 34, and the second silicon oxide film 35 are formed by, for example, a chemical vapor deposition method (CVD method). The substrate 10 is, for example, a silicon substrate having a silicon oxide layer formed on its surface.

[0045] A portion of the first indium tin oxide film 31 will eventually become the lower electrode 12. A portion of the first silicon oxide film 33 will eventually become the lower insulating layer 22. A portion of the tungsten film 34 will eventually become the gate electrode 18. A portion of the second silicon oxide film 35 will eventually become the upper insulating layer 24.

[0046] The first indium tin oxide film 31 is an example of a first conductive film. The first conductive film is a conductive film containing indium (In). The first conductive film is, for example, an oxide conductor containing indium (In).

[0047] The first silicon oxide film 33 is an example of a first insulating film. The first insulating film is, for example, an oxide, a nitride, or an oxynitride.

[0048] The tungsten film 34 is an example of the second conductive film. The second conductive film is, for example, a metal, a metal compound, or a semiconductor.

[0049] The second silicon oxide film 35 is an example of a second insulating film. The second insulating film is, for example, an oxide, a nitride, or an oxynitride.

[0050] Next, an opening 36 is formed from the surface of the second silicon oxide film 35, penetrating the second silicon oxide film 35, the tungsten film 34, and the first silicon oxide film 33 to reach the first indium tin oxide film 31 (FIG. 4). The opening 36 is formed by using, for example, a lithography method and a reactive ion etching method (RIE method).

[0051] Next, a third silicon oxide film 37 is formed in the opening 36 (FIG. 5). The third silicon oxide film 37 is formed so as to contact the bottom and side surfaces of the opening 36. The third silicon oxide film 37 is formed by, for example, a CVD method. A part of the third silicon oxide film 37 will eventually become the gate insulating layer 20. The thickness of the third silicon oxide film 37 is, for example, not less than 2 nm and not more than 10 nm.

[0052] The third silicon oxide film 37 is an example of a third insulating film. The third insulating film is, for example, an oxide, a nitride, or an oxynitride. The third insulating film includes, for example, silicon oxide, aluminum oxide, silicon nitride, aluminum nitride, or silicon oxynitride.

[0053] The third insulating film may be, for example, a laminated film. The third insulating film is, for example, a laminated film of a nitride film and an oxide film. The third insulating film is, for example, a laminated film of a silicon nitride film and a silicon oxide film.

[0054] Next, the third silicon oxide film 37 at the bottom of the opening 36 is removed to expose the first indium tin oxide film 31 at the bottom of the opening 36 (FIG. 6). The third silicon oxide film 37 is etched using, for example, the RIE method.

[0055] When the third silicon oxide film 37 on the bottom of the opening 36 is removed, for example, indium (In) contained in the first indium tin oxide film 31 scatters and adheres to the surface of the third silicon oxide film 37 in contact with the side surface of the opening 36. Thereafter, at least a part of the adhered indium (In) diffuses into the third silicon oxide film 37, for example.

[0056] Wet etching may be performed as a post-treatment after removing the third silicon oxide film 37 at the bottom of the opening 36. For the wet etching, a chemical solution containing, for example, dilute hydrofluoric acid is used.

[0057] Next, at least one of a pre-cleaning of semiconductor film formation using a gas containing dichlorosilane (DCS) (FIG. 7) and a pre-treatment of semiconductor film formation using a gas containing oxygen plasma (FIG. 8) is performed. Both the pre-treatment of semiconductor film formation using a gas containing dichlorosilane (DCS) and the pre-treatment of semiconductor film formation using a gas containing oxygen plasma may be performed.

[0058] The temperature of the semiconductor film formation pretreatment is, for example, 20° C. or more and 300° C. or less. The temperature of the substrate 10 during the semiconductor film formation pretreatment is, for example, 20° C. or more and 300° C. or less.

[0059] The pretreatment for forming the semiconductor film is carried out at a pressure lower than atmospheric pressure, i.e., in a vacuum state.

[0060] By performing a semiconductor film formation pretreatment using a gas containing dichlorosilane (DCS), for example, indium (In) attached to the surface of the third silicon oxide film 37 or indium (In) diffused inside the third silicon oxide film 37 is removed.

[0061] By the semiconductor film formation pretreatment using a gas containing oxygen plasma, for example, indium (In) attached to the surface of the third silicon oxide film 37 or indium (In) diffused inside the third silicon oxide film 37 is oxidized.

[0062] The semiconductor film formation pretreatment using a gas containing dichlorosilane (DCS) is an example of the first treatment. The gas containing dichlorosilane is an example of the first gas.

[0063] The first gas includes silicon (Si). The first gas further includes, for example, carbon (C), hydrogen (H), or a halogen element. The first gas further includes, for example, chlorine (Cl).

[0064] The first gas is, for example, an organic silane gas or an inorganic silane gas. The organic silane gas is, for example, tris(dimethylamino)silane (((CH3)2N)3SiH), monomethylaminosilane (((CH3)HN)SiH3), or bisdimethylaminosilane (((CH3)2N)2Si(CH3)2). The inorganic silane gas is, for example, silane (SiH4), disilane (Si2H6), dichlorosilane (SiH2Cl2), hexachlorodisilane ((SiCl3)2), or trichlorosilane (HSiCl3).

[0065] The semiconductor film formation pretreatment using the gas containing oxygen plasma is an example of the second treatment. The gas containing oxygen plasma is an example of the second gas. For example, ashing can be applied as the semiconductor film formation pretreatment using the gas containing oxygen plasma.

[0066] The second gas is a gas containing oxygen (O). The second gas includes oxygen plasma, oxygen gas (O2), or ozone gas (O3). The second gas including oxygen plasma includes oxygen radicals and oxygen ions.

[0067] Next, an indium gallium zinc oxide film 39 is formed in the opening 36 (FIG. 9). For example, the opening 36 is filled with the indium gallium zinc oxide film 39. A part of the indium gallium zinc oxide film 39 will eventually become the oxide semiconductor layer 16. The indium gallium zinc oxide film 39 is formed by, for example, a CVD method.

[0068] The formation of the indium gallium zinc oxide film 39 is carried out at a pressure less than atmospheric pressure The formation of the indium gallium zinc oxide film 39 is carried out in a vacuum state.

[0069] The formation of the indium gallium zinc oxide film 39 is performed after the semiconductor film formation pretreatment without exposing the substrate 10 to an atmosphere at atmospheric pressure or higher. In other words, the substrate 10 is kept in a vacuum state from the end of the semiconductor film formation pretreatment to the end of the formation of the indium gallium zinc oxide film 39. The semiconductor film formation pretreatment and the formation of the indium gallium zinc oxide film 39 are performed consecutively. The semiconductor film formation pretreatment and the formation of the indium gallium zinc oxide film 39 are performed as a so-called in-situ process.

[0070] The indium gallium zinc oxide film 39 is an example of a semiconductor film. The semiconductor film is, for example, an oxide semiconductor film.

[0071] The semiconductor film contains, for example, at least one element selected from the group consisting of indium (In), gallium (Ga), silicon (Si), aluminum (Al), and tin (Sn), zinc (Zn), and oxygen (O). The semiconductor film contains, for example, indium (In), gallium (Ga), zinc (Zn), and oxygen (O). The semiconductor film contains, for example, indium gallium zinc oxide.

[0072] The semiconductor film contains, for example, at least one element selected from the group consisting of titanium (Ti), zinc (Zn), and tungsten (W), and oxygen (O). The semiconductor film contains, for example, titanium oxide, zinc oxide, or tungsten oxide.

[0073] Next, the upper part of the indium gallium zinc oxide film 39 is removed to expose the surface of the second silicon oxide film 35 (FIG. 10). The indium gallium zinc oxide film 39 is removed by using, for example, the RIE method.

[0074] Next, the second indium tin oxide film 40 is formed (FIG. 11). The second indium tin oxide film 40 is formed by, for example, a CVD method. A part of the second indium tin oxide film 40 will eventually become the upper electrode 14.

[0075] By the above manufacturing method, the transistor 100 shown in FIGS. 1 and 2 is manufactured.

[0076] Next, the operation and effects of the method for manufacturing the semiconductor device according to the first embodiment will be described.

[0077] For example, as a comparative example of a semiconductor device manufacturing method, a case where the semiconductor film formation pretreatment is not performed before the formation of the semiconductor film in the semiconductor device manufacturing method of the first embodiment is considered. In this case, there is a problem that the leakage current of the gate insulating layer of the manufactured transistor increases.

[0078] As described above, when removing the third silicon oxide film 37 at the bottom of the opening 36, for example, indium (In) contained in the first indium tin oxide film 31 scatters and adheres to the surface of the third silicon oxide film 37 in contact with the side surface of the opening 36.

[0079] Then, at least a part of the deposited indium (In) diffuses into the third silicon oxide film 37 which will later become the gate insulating layer. When the substrate 10 is exposed to an atmosphere of atmospheric pressure or higher after the third silicon oxide film 37 at the bottom of the opening 36 is removed, it is considered that the diffusion of indium (In) is promoted due to, for example, the influence of moisture in the atmosphere.

[0080] It is believed that the indium (In) present on the surface of the third silicon oxide film 37 or the indium (In) diffused inside the third silicon oxide film 37 remains even after the transistor is manufactured, which is the cause of the increase in leakage current of the gate insulating layer.

[0081] In the manufacturing method of the semiconductor device of the first embodiment, a semiconductor film formation pretreatment is performed before the formation of the indium gallium zinc oxide film 39. The indium gallium zinc oxide film 39 is formed after the semiconductor film formation pretreatment without exposing the substrate 10 to an atmosphere of atmospheric pressure or higher. The above manufacturing method suppresses leakage current from the gate insulating layer 20 of the manufactured transistor 100.

[0082] When a first process using a first gas containing silicon (Si) is performed as a semiconductor film formation pre-processing, indium (In) present on the surface of the third silicon oxide film 37 or indium (In) diffused inside the third silicon oxide film 37 is removed by the first process. Indium (In) is removed by reacting with the first gas. By removing indium (In) from the third silicon oxide film 37, leakage current of the gate insulating layer 20 of the manufactured transistor 100 is suppressed.

[0083] When a second process using a second gas containing oxygen (O) is performed as a semiconductor film formation pre-processing, indium (In) present on the surface of the third silicon oxide film 37 or indium (In) diffused inside the third silicon oxide film 37 becomes indium oxide by the second process. Indium (In) reacts with the second gas and is oxidized to become indium oxide. By oxidizing indium (In) in the third silicon oxide film 37, leakage current of the gate insulating layer 20 of the manufactured transistor 100 is suppressed.

[0084] When the substrate 10 is exposed to an atmosphere of atmospheric pressure or higher after the semiconductor film formation pretreatment, for example, indium (In) sublimes from the surface of the indium gallium zinc oxide film 39 exposed at the bottom of the opening 36. The sublimated indium (In) may adhere to the surface of the third silicon oxide film 37 in contact with the side surface of the opening 36. In addition, when the substrate 10 is exposed to an atmosphere of atmospheric pressure or higher, the indium (In) adhered to the surface of the third silicon oxide film 37 may diffuse into the third silicon oxide film 37. Therefore, when the substrate 10 is exposed to an atmosphere of atmospheric pressure or higher after the semiconductor film formation pretreatment and before the formation of the indium gallium zinc oxide film 39, the leakage current of the gate insulating layer of the manufactured transistor may increase.

[0085] In the method for manufacturing a semiconductor device according to the first embodiment, the indium gallium zinc oxide film 39 is formed after the semiconductor film formation pretreatment without exposing the substrate 10 to an atmosphere of atmospheric pressure or higher. This suppresses the adhesion of indium (In) to the surface of the third silicon oxide film 37 due to sublimation of indium (In) and the diffusion of indium (In) into the third silicon oxide film 37. This suppresses the leakage current of the gate insulating layer 20 of the transistor 100 manufactured by the method for manufacturing a semiconductor device according to the first embodiment.

[0086] The temperature of the semiconductor film formation pretreatment is preferably 20° C. or more and 300° C. or less, more preferably 50° C. or more and 250° C. or less, and even more preferably 100° C. or more and 200° C. or less. By setting the temperature at or above the lower limit, the removal of indium (In) in the first treatment and the oxidation of indium (In) in the second treatment are promoted. Also, by setting the temperature at or below the upper limit, for example, process damage due to thermal stress on the first conductive film and the second conductive film is reduced.

[0087] As described above, according to the first embodiment, a method for manufacturing a semiconductor device in which leakage current from a gate insulating layer is suppressed can be realized.

[0088] Second embodiment The method for manufacturing a semiconductor device according to the second embodiment includes forming a first conductive film containing indium (In) on a substrate, forming a first insulating film on the first conductive film, forming an intermediate insulating film on the first insulating film, forming a second insulating film on the intermediate insulating film, forming an opening that penetrates the second insulating film, the intermediate insulating film, and the first insulating film and reaches the first conductive film, forming a third insulating film in the opening that contacts the bottom and side of the opening, removing the third insulating film at the bottom of the opening to expose the first conductive film at the bottom of the opening, performing at least one of the processes selected from the group consisting of a first process using a first gas containing silicon (Si) and a second process using a second gas containing oxygen (O), and after at least one of the processes, forming a semiconductor film in the opening without exposing the substrate to an atmosphere of atmospheric pressure or higher, removing the intermediate insulating film, and forming a second conductive film in the region where the intermediate insulating film has been removed. The method for manufacturing a semiconductor device according to the second embodiment differs from the method for manufacturing a semiconductor device according to the first embodiment in that the second conductive film is formed after the semiconductor film is formed in the opening. Hereinafter, some of the contents that overlap with the first embodiment may be omitted.

[0089] The semiconductor device manufactured by the method for manufacturing a semiconductor device according to the second embodiment is an oxide semiconductor transistor similar to the transistor 100 according to the first embodiment.

[0090] Next, an example of a method for manufacturing the semiconductor device according to the second embodiment will be described.

[0091] Figures 12, 13, 14, 15, 16, and 17 are schematic cross-sectional views showing an example of a method for manufacturing a semiconductor device according to the second embodiment. Each of Figures 12 to 17 shows a cross section corresponding to Figure 1 of the first embodiment.

[0092] First, a first indium tin oxide film 31, a first silicon oxide film 33, a silicon nitride film 42, and a second silicon oxide film 35 are laminated in this order in a first direction on a substrate 10 (FIG. 12). The first indium tin oxide film 31, the first silicon oxide film 33, the silicon nitride film 42, and the second silicon oxide film 35 are formed by, for example, a CVD method. The substrate 10 is, for example, a silicon substrate having a silicon oxide layer formed on its surface.

[0093] A portion of the first indium tin oxide film 31 will eventually become the lower electrode 12. A portion of the first silicon oxide film 33 will eventually become the lower insulating layer 22. A portion of the second silicon oxide film 35 will eventually become the upper insulating layer 24.

[0094] The first indium tin oxide film 31 is an example of a first conductive film. The first conductive film is a conductive film containing indium (In). The first conductive film is, for example, an oxide conductor containing indium (In).

[0095] The first silicon oxide film 33 is an example of a first insulating film. The first insulating film is, for example, an oxide, a nitride, or an oxynitride.

[0096] The silicon nitride film 42 is an example of an intermediate insulating film. The intermediate insulating film is, for example, a nitride or an oxynitride.

[0097] The second silicon oxide film 35 is an example of a second insulating film. The second insulating film is, for example, an oxide, a nitride, or an oxynitride.

[0098] Next, an opening 36 is formed from the surface of the second silicon oxide film 35, penetrating the second silicon oxide film 35, the silicon nitride film 42, and the first silicon oxide film 33 to reach the first indium tin oxide film 31 (FIG. 13). The opening 36 is formed by using, for example, a lithography method and an RIE method.

[0099] Next, a third silicon oxide film 37 is formed in the opening 36. The third silicon oxide film 37 is formed in contact with the bottom and side surfaces of the opening 36. The third silicon oxide film 37 is formed by, for example, a CVD method. A part of the third silicon oxide film 37 will eventually become the gate insulating layer 20.

[0100] The third silicon oxide film 37 is an example of a third insulating film. The third insulating film is, for example, an oxide, a nitride, or an oxynitride. The third insulating film includes, for example, silicon oxide, aluminum oxide, silicon nitride, aluminum nitride, or silicon oxynitride.

[0101] Next, the third silicon oxide film 37 at the bottom of the opening 36 is removed to expose the first indium tin oxide film 31. The third silicon oxide film 37 is etched by using, for example, the RIE method.

[0102] As a post-treatment after removing the third silicon oxide film 37 at the bottom of the opening 36, wet etching may be performed.

[0103] Next, at least one of a semiconductor film formation pretreatment using a gas containing dichlorosilane (DCS) or a semiconductor film formation pretreatment using a gas containing oxygen plasma is performed. Both a semiconductor film formation pretreatment using a gas containing dichlorosilane (DCS) and a semiconductor film formation pretreatment using a gas containing oxygen plasma may be performed.

[0104] The temperature of the semiconductor film formation pretreatment is, for example, 10° C. or more and 300° C. or less. The temperature of the substrate 10 during the semiconductor film formation pretreatment is, for example, 20° C. or more and 300° C. or less.

[0105] By a semiconductor film formation pretreatment using a gas containing dichlorosilane (DCS), for example, indium (In) present on the surface or inside of the third silicon oxide film 37 in contact with the side surface of the opening 36 is removed.

[0106] By a semiconductor film formation pretreatment using a gas containing oxygen plasma, for example, indium (In) present on the surface or inside of the third silicon oxide film 37 in contact with the side surface of the opening 36 is removed.

[0107] The semiconductor film formation pretreatment using the gas containing dichlorosilane is an example of the first treatment. The gas containing dichlorosilane is an example of the first gas.

[0108] The first gas includes silicon (Si). The first gas further includes, for example, carbon (C), hydrogen (H), or a halogen element. The first gas further includes, for example, chlorine (Cl).

[0109] The first gas may be, for example, silane, dichlorosilane (DCS), tris(dimethylamino)silane (TDMAS), or hexachlorodisilane (HCDS).

[0110] The semiconductor film formation pretreatment using a gas containing oxygen plasma is an example of the second treatment. The gas containing oxygen plasma is an example of the second gas.

[0111] The second gas is a gas containing oxygen (O). The second gas includes oxygen plasma, oxygen gas (O2), or ozone gas (O3). The gas containing oxygen plasma includes oxygen radicals and oxygen ions. The second gas containing oxygen plasma includes oxygen radicals and oxygen ions.

[0112] Next, an indium gallium zinc oxide film 39 is formed in the opening 36 .

[0113] The formation of the indium gallium zinc oxide film 39 is performed after the semiconductor film formation pretreatment without exposing the substrate 10 to an atmosphere at atmospheric pressure or higher. In other words, the substrate 10 is kept in a vacuum state from the end of the semiconductor film formation pretreatment to the start of the formation of the indium gallium zinc oxide film 39. The semiconductor film formation pretreatment and the formation of the indium gallium zinc oxide film 39 are performed consecutively. The semiconductor film formation pretreatment and the formation of the indium gallium zinc oxide film 39 are performed as a so-called in-situ process.

[0114] The indium gallium zinc oxide film 39 is an example of a semiconductor film. The semiconductor film is, for example, an oxide semiconductor film.

[0115] Next, the upper part of the indium gallium zinc oxide film 39 is removed to expose the surface of the second silicon oxide film 35 (FIG. 14).

[0116] Next, the silicon nitride film 42 is removed (FIG. 15). The silicon nitride film 42 is removed by, for example, a wet etching method.

[0117] Next, a tungsten film 34 is formed in the region from which the silicon nitride film 42 has been removed (FIG. 16). A part of the tungsten film 34 will eventually become the gate electrode 18.

[0118] The tungsten film 34 is an example of the second conductive film. The second conductive film is, for example, a metal, a metal compound, or a semiconductor.

[0119] Next, the second indium tin oxide film 40 is formed (FIG. 17). The second indium tin oxide film 40 is formed by, for example, a CVD method. A part of the second indium tin oxide film 40 will eventually become the upper electrode 14.

[0120] By the above manufacturing method, the transistor of the second embodiment is manufactured.

[0121] According to the method for manufacturing a semiconductor device of the second embodiment, similarly to the method for manufacturing a semiconductor device of the first embodiment, the leakage current of the gate insulating layer of the manufactured transistor is suppressed by performing a pretreatment for forming a semiconductor film.

[0122] As described above, according to the second embodiment, a method for manufacturing a semiconductor device in which leakage current from a gate insulating layer is suppressed can be realized.

[0123] (Third embodiment) The semiconductor manufacturing apparatus of the third embodiment includes a first supply pipe for supplying a first gas containing silicon (Si), a second supply pipe for supplying a first raw material gas containing indium (In), a third supply pipe for supplying a second raw material gas containing oxygen (O), and a chamber to which the first supply pipe, the second supply pipe, and the third supply pipe are connected. The semiconductor manufacturing apparatus of the third embodiment is a semiconductor manufacturing apparatus that realizes the semiconductor device manufacturing method of the first or second embodiment. Hereinafter, some of the contents that overlap with the first or second embodiment may be omitted.

[0124] 18 is a schematic diagram of a semiconductor manufacturing apparatus according to a third embodiment. The semiconductor manufacturing apparatus according to the third embodiment is a film forming apparatus 200 that forms a film on a substrate. The film forming apparatus 200 is a single wafer processing type film forming apparatus that forms a film on one substrate in one film forming process.

[0125] The film forming apparatus 200 can realize the semiconductor device manufacturing method of the first embodiment or the second embodiment. The film forming apparatus 200 is a film forming apparatus capable of executing the first process and the formation of a semiconductor film after the first process in the manufacturing method of the first embodiment or the second embodiment.

[0126] The film forming apparatus 200 includes a process chamber 50, a load-lock chamber 54, a gate valve 55, a first pre-treatment gas supply pipe 61, a first source gas supply pipe 71, a second source gas supply pipe 72, and a control circuit 80. The film forming apparatus 200 also includes a first valve V1, a second valve V2, and a third valve V3.

[0127] A semiconductor film formation pretreatment for the substrate and formation of the semiconductor film on the substrate are performed successively in the process chamber 50. The process chamber 50 is an example of a chamber.

[0128] The substrate is placed on, for example, a holder provided in the process chamber 50. For example, an exhaust pipe and a vacuum pump (not shown) are connected to the process chamber 50. The inside of the process chamber 50 can be maintained at a vacuum.

[0129] The load lock chamber 54 is provided to load and unload a substrate into and from the process chamber 50 without opening the process chamber 50 to the atmosphere. For example, an exhaust pipe and a vacuum pump (not shown) are connected to the load lock chamber 54. The inside of the load lock chamber 54 can be maintained at a vacuum.

[0130] The gate valve 55 is provided between the load lock chamber 54 and the process chamber 50. The gate valve 55 has a function of maintaining a vacuum state in the process chamber 50. The substrate can pass through the gate valve 55.

[0131] The first pre-processing gas supply pipe 61 is connected to the process chamber 50. The first pre-processing gas supply pipe 61 is an example of a first supply pipe. The first pre-processing gas supply pipe 61 supplies a first gas (G1) containing silicon (Si) to the process chamber 50.

[0132] A first valve V1 is provided in the first pretreatment gas supply pipe 61. The first valve V1 is used to control the start and stop of the supply of the first gas G1.

[0133] The first source gas supply pipe 71 is connected to the process chamber 50. The first source gas supply pipe 71 is an example of a second supply pipe. The first source gas supply pipe 71 supplies a first source gas (SG1) containing indium (In) to the process chamber 50.

[0134] The first source gas SG1 further contains, for example, gallium (Ga) and zinc (Zn).The first source gas SG1 contains, for example, trimethylindium, trimethylgallium, and dimethylzinc.

[0135] A second valve V2 is provided in the first source gas supply pipe 71. The second valve V2 is used to control the start and stop of the supply of the first source gas SG1.

[0136] The second source gas supply pipe 72 is connected to the process chamber 50. The second source gas supply pipe 72 is an example of a third supply pipe. The second source gas supply pipe 72 supplies a second source gas (SG2) containing oxygen (O) to the process chamber 50.

[0137] The second source gas SG2 is, for example, ozone gas.

[0138] A third valve V3 is provided in the second source gas supply pipe 72. The third valve V3 is used to control the start and stop of the supply of the second source gas SG2.

[0139] The control circuit 80 has a function of controlling processing of the substrate in the film forming apparatus 200. The control circuit 80 controls the opening and closing of the first valve V1. The control circuit 80 controls the opening and closing of the second valve V2. The control circuit 80 controls the opening and closing of the third valve V3. The control circuit 80 controls the opening and closing of the gate valve 55.

[0140] The control circuit 80 controls the loading and unloading of the substrate into and from the process chamber 50. The control circuit 80 controls the pressure and temperature inside the process chamber 50 or the pressure and temperature inside the load lock chamber 54.

[0141] The control circuit 80 is, for example, an electronic circuit, and includes, for example, hardware and software.

[0142] The control circuit 80 includes, for example, a Central Processing Unit (CPU). The control circuit 80 includes, for example, a storage device. The storage device included in the control circuit 80 is, for example, a semiconductor memory, a solid state device (SSD), or a hard disk.

[0143] The control circuit 80 can control the film forming apparatus 200 to realize the semiconductor device manufacturing method of the first embodiment or the semiconductor device manufacturing method of the second embodiment. The control circuit 80 controls the loading of the substrate into the process chamber 50. The control circuit 80 controls the supply of a first gas G1 containing silicon (Si) into the process chamber 50 using the first pre-treatment gas supply pipe 61. The control circuit 80 controls the supply of a first source gas SG1 into the process chamber 50 using the first source gas supply pipe 71 and the supply of a second source gas SG2 into the process chamber 50 using the second source gas supply pipe 72. The control circuit 80 controls the formation of a semiconductor film on the substrate. The control circuit 80 controls the unloading of the substrate out of the process chamber 50.

[0144] According to the film forming apparatus 200 of the third embodiment, it is possible to perform the semiconductor film formation pre-treatment and the formation of the semiconductor film consecutively in the same process chamber 50. Therefore, the semiconductor film can be formed without exposing the substrate to an atmosphere of atmospheric pressure or higher between the semiconductor film formation pre-treatment and the formation of the semiconductor film.

[0145] As described above, according to the third embodiment, it is possible to realize a semiconductor manufacturing apparatus capable of manufacturing a semiconductor device in which leakage current in a gate insulating layer is suppressed.

[0146] (Fourth embodiment) The semiconductor manufacturing apparatus of the fourth embodiment includes a first supply pipe for supplying a first gas containing silicon (Si), a second supply pipe for supplying a first raw material gas containing indium (In), a third supply pipe for supplying a second raw material gas containing oxygen (O), a first chamber to which the first supply pipe is connected, a second chamber to which the second supply pipe and the third supply pipe are connected, and a transfer path that connects the first chamber and the second chamber and can maintain the inside at a pressure lower than atmospheric pressure. The semiconductor manufacturing apparatus of the fourth embodiment is a semiconductor manufacturing apparatus that realizes the manufacturing method of the semiconductor device of the first embodiment or the second embodiment. The semiconductor manufacturing apparatus of the fourth embodiment is different from the semiconductor manufacturing apparatus of the third embodiment in that it includes two chambers, the first chamber and the second chamber, and a transfer path. Hereinafter, some of the contents that overlap with the first embodiment, the second embodiment, or the third embodiment may be omitted.

[0147] 19 is a schematic diagram of a semiconductor manufacturing apparatus according to a fourth embodiment. The semiconductor manufacturing apparatus according to the fourth embodiment is a film forming apparatus 300 that forms a film on a substrate. The film forming apparatus 300 is a single-wafer type film forming apparatus that forms a film on one substrate in one film forming process.

[0148] The film formation apparatus 300 can realize the semiconductor device manufacturing method of the first embodiment or the second embodiment. The film formation apparatus 300 is a film formation apparatus capable of executing the first process and the formation of a semiconductor film after the first process in the manufacturing method of the first embodiment or the second embodiment.

[0149] The film forming apparatus 300 includes a first process chamber 51, a second process chamber 52, a transfer chamber 53, a load lock chamber 54, a first gate valve 56, a second gate valve 57, a third gate valve 58, a first pre-treatment gas supply pipe 61, a first source gas supply pipe 71, a second source gas supply pipe 72, and a control circuit 80. The film forming apparatus 300 also includes a first valve V1, a second valve V2, and a third valve V3.

[0150] A semiconductor film formation pretreatment is performed on a substrate in the first process chamber 51. The first process chamber 51 is an example of a first chamber.

[0151] The substrate is placed on, for example, a holder provided in a first process chamber 51. For example, an exhaust pipe and a vacuum pump (not shown) are connected to the first process chamber 51. The inside of the first process chamber 51 can be maintained at a vacuum.

[0152] A semiconductor film is formed on a substrate in the second process chamber 52. The second process chamber 52 is an example of a second chamber.

[0153] The substrate is placed on, for example, a holder provided in the second process chamber 52. For example, an exhaust pipe and a vacuum pump (not shown) are connected to the second process chamber 52. The inside of the second process chamber 52 can be maintained at a vacuum.

[0154] The transfer chamber 53 has a function of transferring the substrate between the load lock chamber 54, the first process chamber 51, and the second process chamber 52. The transfer chamber 53 is an example of a transfer path. In the transfer chamber 53, for example, a transfer robot for transferring the substrate is provided.

[0155] For example, an exhaust pipe and a vacuum pump (not shown) are connected to the transfer chamber 53. The inside of the transfer chamber 53 can be maintained at a vacuum. The inside of the transfer chamber 53 can be maintained at a pressure lower than atmospheric pressure.

[0156] The load lock chamber 54 is provided to load and unload the substrate into and from the transfer chamber 53 without opening the transfer chamber 53 to the atmosphere. The load lock chamber 54 is connected to, for example, an exhaust pipe and a vacuum pump (not shown). The inside of the load lock chamber 54 can be maintained at a vacuum.

[0157] The first gate valve 56 is provided between the load lock chamber 54 and the transfer chamber 53. The first gate valve 56 has a function of maintaining a vacuum in the transfer chamber 53. The substrate can pass through the first gate valve 56.

[0158] The second gate valve 57 is provided between the first process chamber 51 and the transfer chamber 53. The substrate can pass through the second gate valve 57. The second gate valve 57 has a function of maintaining the vacuum of the first process chamber 51. The substrate can pass through the second gate valve 57.

[0159] The third gate valve 58 is provided between the second process chamber 52 and the transfer chamber 53. The third gate valve 58 has a function of maintaining a vacuum in the second process chamber 52. The substrate can pass through the third gate valve 58.

[0160] The first pre-processing gas supply pipe 61 is connected to the first process chamber 51. The first pre-processing gas supply pipe 61 is an example of a first supply pipe. The first pre-processing gas supply pipe 61 supplies a first gas (G1) containing silicon (Si) to the first process chamber 51.

[0161] A first valve V1 is provided in the first pretreatment gas supply pipe 61. The first valve V1 is used to control the start and stop of the supply of the first gas G1.

[0162] The first source gas supply pipe 71 is connected to the second process chamber 52. The first source gas supply pipe 71 is an example of a second supply pipe. The first source gas supply pipe 71 supplies a first source gas (SG1) containing indium (In) to the second process chamber 52.

[0163] The first source gas SG1 further contains, for example, gallium (Ga) and zinc (Zn).The first source gas SG1 contains, for example, trimethylindium, trimethylgallium, and dimethylzinc.

[0164] A second valve V2 is provided in the first source gas supply pipe 71. The second valve V2 is used to control the start and stop of the supply of the first source gas SG1.

[0165] The second source gas supply pipe 72 is connected to the second process chamber 52. The second source gas supply pipe 72 is an example of a third supply pipe. The second source gas supply pipe 72 supplies a second source gas (SG2) containing oxygen (O) to the second process chamber 52.

[0166] The second source gas SG2 is, for example, ozone gas.

[0167] A third valve V3 is provided in the second source gas supply pipe 72. The third valve V3 is used to control the start and stop of the supply of the second source gas SG2.

[0168] The control circuit 80 has a function of controlling processing of the substrate in the film forming apparatus 300. The control circuit 80 controls the opening and closing of the first valve V1. The control circuit 80 controls the opening and closing of the second valve V2. The control circuit 80 controls the opening and closing of the third valve V3. The control circuit 80 controls the opening and closing of the first gate valve 56. The control circuit 80 controls the opening and closing of the second gate valve 57. The control circuit 80 controls the opening and closing of the third gate valve 58.

[0169] The control circuit 80 controls the loading of the substrate into the first process chamber 51 and the unloading of the substrate from the first process chamber 51. The control circuit 80 controls the loading of the substrate into the second process chamber 52 and the unloading of the substrate from the second process chamber 52. The control circuit 80 controls the pressure and temperature inside the first process chamber 51, the pressure and temperature inside the second process chamber 52, the pressure and temperature inside the transfer chamber 53, or the pressure and temperature inside the load lock chamber 54.

[0170] The control circuit 80 is, for example, an electronic circuit, and includes, for example, hardware and software.

[0171] The control circuit 80 includes, for example, a CPU. The control circuit 80 includes, for example, a storage device. The storage device included in the control circuit 80 is, for example, a semiconductor memory, an SSD, or a hard disk.

[0172] The control circuit 80 can control the film forming apparatus 300 to realize the manufacturing method of the semiconductor device of the first embodiment or the manufacturing method of the semiconductor device of the second embodiment. The control circuit 80 controls the loading of the substrate into the first process chamber 51. The control circuit 80 controls the supply of the first gas G1 containing silicon (Si) into the first process chamber 51 using the first pre-treatment gas supply pipe 61. The control circuit 80 controls the movement of the substrate in the transfer chamber 53 maintained at a pressure less than atmospheric pressure. The control circuit 80 controls the loading of the substrate into the second process chamber 52. The control circuit 80 controls the supply of the first source gas SG1 into the second process chamber 52 using the first source gas supply pipe 71 and the supply of the second source gas SG2 into the second process chamber 52 using the second source gas supply pipe 72. The control circuit 80 controls the formation of a semiconductor film on the substrate. The control circuit 80 controls the unloading of the substrate out of the second process chamber 52.

[0173] According to the film forming apparatus 300 of the fourth embodiment, it is possible to continuously perform the semiconductor film formation pretreatment in the first process chamber 51 and the formation of the semiconductor film in the second process chamber 52 in the same apparatus. By providing a transfer chamber 53 capable of maintaining a pressure below atmospheric pressure between the first process chamber 51 and the second process chamber 52, it is possible to form the semiconductor film without exposing the substrate to an atmosphere above atmospheric pressure between the semiconductor film formation pretreatment and the formation of the semiconductor film.

[0174] (Modification) The semiconductor manufacturing apparatus according to the modification of the fourth embodiment differs from the semiconductor manufacturing apparatus according to the fourth embodiment in that the transfer chamber 53 is an example of a first chamber, and the third gate valve 58 is an example of a transfer path.

[0175] 20 is a schematic diagram of a semiconductor manufacturing apparatus according to a modification of the fourth embodiment. The semiconductor manufacturing apparatus according to the modification of the fourth embodiment is a film forming apparatus 301 that forms a film on a substrate.

[0176] The film forming apparatus 301 includes a first process chamber 51, a second process chamber 52, a transfer chamber 53, a load lock chamber 54, a first gate valve 56, a second gate valve 57, a third gate valve 58, a first pretreatment gas supply pipe 61, a first source gas supply pipe 71, a second source gas supply pipe 72, and a control circuit 80. The film forming apparatus 301 also includes a first valve V1, a second valve V2, and a third valve V3.

[0177] In the first process chamber 51, for example, a film is formed on a substrate. In the first process chamber 51, for example, an insulating film is formed on a substrate.

[0178] The substrate is placed on, for example, a holder provided in a first process chamber 51. For example, an exhaust pipe and a vacuum pump (not shown) are connected to the first process chamber 51. The inside of the first process chamber 51 can be maintained at a vacuum.

[0179] A semiconductor film is formed on a substrate in the second process chamber 52. The second process chamber 52 is an example of a second chamber.

[0180] The substrate is placed on, for example, a holder provided in the second process chamber 52. For example, an exhaust pipe and a vacuum pump (not shown) are connected to the second process chamber 52. The inside of the second process chamber 52 can be maintained at a vacuum.

[0181] The transfer chamber 53 has a function of transferring the substrate between the load lock chamber 54, the first process chamber 51, and the second process chamber 52. In the transfer chamber 53, for example, a transfer robot for transferring the substrate is provided.

[0182] Furthermore, a semiconductor film formation pretreatment is performed on the substrate in the transfer chamber 53. The transfer chamber 53 is an example of a first chamber.

[0183] For example, an exhaust pipe and a vacuum pump (not shown) are connected to the transfer chamber 53. The inside of the transfer chamber 53 can be maintained at a vacuum.

[0184] The third gate valve 58 is provided between the second process chamber 52 and the transfer chamber 53 and is an example of a transfer path. The third gate valve 58 has a function of maintaining the vacuum of the second process chamber 52. The substrate can pass through the third gate valve.

[0185] The first pre-processing gas supply pipe 61 is connected to the transfer chamber 53. The first pre-processing gas supply pipe 61 is an example of a first supply pipe. The first pre-processing gas supply pipe 61 supplies a first gas (G1) containing silicon (Si) to the first process chamber 51.

[0186] A first valve V1 is provided in the first pretreatment gas supply pipe 61. The first valve V1 is used to control the start and stop of the supply of the first gas G1.

[0187] According to the film forming apparatus 301 of the modified example of the fourth embodiment, it is possible to continuously perform the semiconductor film formation pretreatment in the transfer chamber 53 and the formation of the semiconductor film in the second process chamber 52 in the same apparatus. By providing a third gate valve 58 capable of maintaining the inside of the chamber at a pressure lower than atmospheric pressure between the transfer chamber 53 and the second process chamber 52, it is possible to form the semiconductor film without exposing the substrate to an atmosphere at atmospheric pressure or higher between the semiconductor film formation pretreatment and the formation of the semiconductor film.

[0188] In addition, as another modified example of the film formation apparatus of the fourth embodiment, it is also possible to connect the first pre-treatment gas supply pipe 61 to the load lock chamber 54 and perform a semiconductor film formation pre-treatment in the load lock chamber 54. In the case of the film formation apparatus of this modified example, the load lock chamber 54 is an example of the first chamber, the second process chamber 52 is an example of the second chamber, and the transfer chamber 53 is an example of the transfer path.

[0189] As described above, according to the fourth embodiment and its modification, a semiconductor manufacturing apparatus capable of manufacturing a semiconductor device in which leakage current in a gate insulating layer is suppressed can be realized.

[0190] Fifth embodiment The semiconductor manufacturing apparatus of the fifth embodiment includes a first supply pipe for supplying a second gas containing oxygen (O), a second supply pipe for supplying a first raw material gas containing indium (In), a third supply pipe for supplying the second raw material gas containing oxygen (O), and a chamber to which the first supply pipe, the second supply pipe, and the third supply pipe are connected. The semiconductor manufacturing apparatus of the fifth embodiment is a semiconductor manufacturing apparatus that realizes the semiconductor device manufacturing method of the first embodiment or the second embodiment. The semiconductor manufacturing apparatus of the fifth embodiment is different from the semiconductor manufacturing apparatus of the third embodiment in that the first supply pipe supplies a second gas instead of the first gas. Hereinafter, some of the contents that overlap with the first embodiment, the second embodiment, or the third embodiment may be omitted.

[0191] 21 is a schematic diagram of a semiconductor manufacturing apparatus according to a fifth embodiment. The semiconductor manufacturing apparatus according to the fifth embodiment is a film forming apparatus 400 that forms a film on a substrate. The film forming apparatus 400 is a single-wafer type film forming apparatus that forms a film on one substrate in one film forming process.

[0192] The film forming apparatus 400 can realize the semiconductor device manufacturing method of the first embodiment or the second embodiment. The film forming apparatus 400 is a film forming apparatus that can execute the second process and the formation of the semiconductor film after the second process in the manufacturing method of the first embodiment or the second embodiment.

[0193] The film forming apparatus 400 includes a process chamber 50, a load lock chamber 54, a gate valve 55, a first pre-treatment gas supply pipe 61, a first source gas supply pipe 71, a second source gas supply pipe 72, and a control circuit 80. The film forming apparatus 400 also includes a first valve V1, a second valve V2, and a third valve V3. The first pre-treatment gas supply pipe 61 includes a plasma generator 90.

[0194] A semiconductor film formation pretreatment for the substrate and formation of the semiconductor film on the substrate are performed successively in the process chamber 50. The process chamber 50 is an example of a chamber.

[0195] The first pre-treatment gas supply pipe 61 is connected to the process chamber 50. The first pre-treatment gas supply pipe 61 is an example of a first supply pipe. The first pre-treatment gas supply pipe 61 supplies a second gas (G2) containing oxygen (O) to the process chamber 50.

[0196] A first valve V1 is provided in the first pretreatment gas supply pipe 61. The first valve V1 is used to control the start and stop of the supply of the second gas G2.

[0197] The first pretreatment gas supply pipe 61 is equipped with a plasma generator 90. The plasma generator 90 generates plasma using, for example, a high-frequency induction coil. The plasma generator 90 has a function of generating oxygen plasma. The plasma generator 90 generates oxygen plasma from, for example, oxygen gas (O2). The generated oxygen plasma is supplied from the first pretreatment gas supply pipe 61 to the process chamber 50.

[0198] According to the film forming apparatus 400 of the fifth embodiment, it is possible to continuously perform the semiconductor film formation pre-treatment and the formation of the semiconductor film in the same process chamber 50. Therefore, the semiconductor film can be formed without exposing the substrate to an atmosphere of atmospheric pressure or higher between the semiconductor film formation pre-treatment and the formation of the semiconductor film.

[0199] As a film forming apparatus according to a modification of the fifth embodiment, the first pre-treatment gas supply pipe 61 may be configured not to include the plasma generator 90. In this case, for example, oxygen gas (O2) or ozone gas (O3) is supplied to the process chamber 50 from the first pre-treatment gas supply pipe 61 as the second gas G2 containing oxygen (O).

[0200] As described above, according to the fifth embodiment and its modified examples, a semiconductor manufacturing apparatus capable of manufacturing a semiconductor device in which leakage current in a gate insulating layer is suppressed can be realized.

[0201] Sixth embodiment The semiconductor manufacturing apparatus of the sixth embodiment includes a first supply pipe for supplying a second gas containing oxygen (O), a second supply pipe for supplying a first raw material gas containing indium (In), a third supply pipe for supplying a second raw material gas containing oxygen (O), a first chamber to which the first supply pipe is connected, a second chamber to which the second supply pipe and the third supply pipe are connected, and a transfer path that connects the first chamber and the second chamber and can maintain the inside at a pressure lower than atmospheric pressure. The semiconductor manufacturing apparatus of the sixth embodiment is a semiconductor manufacturing apparatus that realizes the manufacturing method of the semiconductor device of the first embodiment or the second embodiment. The semiconductor manufacturing apparatus of the sixth embodiment is different from the semiconductor manufacturing apparatus of the fourth embodiment in that the first supply pipe supplies a second gas instead of the first gas. Hereinafter, some of the contents that overlap with the first embodiment, the second embodiment, or the fourth embodiment may be omitted.

[0202] 22 is a schematic diagram of a semiconductor manufacturing apparatus according to a sixth embodiment. The semiconductor manufacturing apparatus according to the sixth embodiment is a film forming apparatus 500 that forms a film on a substrate. The film forming apparatus 500 is a single-wafer type film forming apparatus that forms a film on one substrate in one film forming process.

[0203] The film forming apparatus 500 can realize the semiconductor device manufacturing method of the first embodiment or the second embodiment. The film forming apparatus 500 is a film forming apparatus that can execute the second process and the formation of the semiconductor film after the second process in the manufacturing method of the first embodiment or the second embodiment.

[0204] The film forming apparatus 500 includes a first process chamber 51, a second process chamber 52, a transfer chamber 53, a load lock chamber 54, a first gate valve 56, a second gate valve 57, a third gate valve 58, a first pre-treatment gas supply pipe 61, a first source gas supply pipe 71, a second source gas supply pipe 72, and a control circuit 80. The film forming apparatus 500 also includes a first valve V1, a second valve V2, and a third valve V3. The first pre-treatment gas supply pipe 61 includes a plasma generator 90.

[0205] A semiconductor film formation pretreatment is performed on a substrate in the first process chamber 51. The first process chamber 51 is an example of a first chamber.

[0206] A semiconductor film is formed on a substrate in the second process chamber 52. The second process chamber 52 is an example of a second chamber.

[0207] The first pre-treatment gas supply pipe 61 is connected to the first process chamber 51. The first pre-treatment gas supply pipe 61 is an example of a first supply pipe. The first pre-treatment gas supply pipe 61 supplies a second gas (G2) containing oxygen (O) to the first process chamber 51.

[0208] A first valve V1 is provided in the first pretreatment gas supply pipe 61. The first valve V1 is used to control the start and stop of the supply of the second gas G2.

[0209] The first pre-treatment gas supply pipe 61 is equipped with a plasma generator 90. The plasma generator 90 generates plasma using, for example, a high-frequency induction coil. The plasma generator 90 has a function of generating oxygen plasma. The plasma generator 90 generates oxygen plasma from, for example, oxygen gas (O2). The generated oxygen plasma is supplied from the first pre-treatment gas supply pipe 61 to the first process chamber 51.

[0210] According to the film forming apparatus 500 of the sixth embodiment, it is possible to continuously perform the semiconductor film formation pretreatment in the first process chamber 51 and the formation of the semiconductor film in the second process chamber 52 in the same apparatus. By providing a transfer chamber 53 capable of maintaining the inside at a pressure lower than atmospheric pressure between the first process chamber 51 and the second process chamber 52, it is possible to form the semiconductor film without exposing the substrate to an atmosphere of atmospheric pressure or higher between the semiconductor film formation pretreatment and the formation of the semiconductor film.

[0211] As a film forming apparatus according to a modification of the sixth embodiment, the first pre-treatment gas supply pipe 61 may be configured not to include the plasma generator 90. In this case, for example, oxygen gas (O2) or ozone gas (O3) is supplied to the first process chamber 51 from the first pre-treatment gas supply pipe 61 as the second gas G2 containing oxygen (O).

[0212] In addition, as another modified example of the film forming apparatus of the sixth embodiment, it is also possible to connect the first pre-treatment gas supply pipe 61 to the transfer chamber 53 and perform a semiconductor film formation pre-treatment in the transfer chamber 53. In the case of the film forming apparatus of this modified example, the transfer chamber 53 is an example of the first chamber, the second process chamber 52 is an example of the second chamber, and the third gate valve 58 is an example of the transfer path.

[0213] In addition, as a film formation apparatus according to yet another modified example of the sixth embodiment, it is also possible to connect the first pre-treatment gas supply pipe 61 to the load lock chamber 54 and perform a semiconductor film formation pre-treatment in the load lock chamber 54. In the case of the film formation apparatus according to this modified example, the load lock chamber 54 is an example of the first chamber, the second process chamber 52 is an example of the second chamber, and the transfer chamber 53 is an example of the transfer path.

[0214] As described above, according to the sixth embodiment and its modifications, a semiconductor manufacturing apparatus capable of manufacturing a semiconductor device in which leakage current in a gate insulating layer is suppressed can be realized.

[0215] In the third to sixth embodiments, a single wafer processing type film formation apparatus that forms a film on one substrate in one film formation process has been described as an example, but the film formation apparatus may also be a batch processing type film formation apparatus that forms a film on multiple substrates in one film formation process.

[0216] Although several embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. For example, components of one embodiment may be replaced or changed with components of another embodiment. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0217] 10 Substrate 31 First indium tin oxide film (first conductive film) 33 First silicon oxide film (first insulating film) 34 Tungsten film (second conductive film) 35 Second silicon oxide film (second insulating film) 36 Opening 37 Third silicon oxide film (third insulating film) 39 Indium gallium zinc oxide film (semiconductor film) 50 Process chamber (chamber) 51 First process chamber (first chamber) 52 Second process chamber (second chamber) 53 Transfer chamber (transfer path, first chamber) 54 Load lock chamber (first chamber) 58 3rd gate valve (transport path) 61 First pretreatment gas supply pipe (first supply pipe) 71 First raw material gas supply pipe (second supply pipe) 72 second raw material gas supply pipe (third supply pipe) 80 Control circuit 90 Plasma Generator 100 Transistor (semiconductor device) 200 Film forming equipment (semiconductor manufacturing equipment) 300 Film forming equipment (semiconductor manufacturing equipment) 301 Film forming equipment (semiconductor manufacturing equipment) 400 Film forming equipment (semiconductor manufacturing equipment) 500 Film forming equipment (semiconductor manufacturing equipment) G1 First Gas G2 Second Gas SG1 First source gas SG2 Second source gas

Claims

1. forming a first conductive film containing indium (In) on a substrate; forming a first insulating film on the first conductive film; forming a second conductive film on the first insulating film; forming a second insulating film on the second conductive film; forming an opening portion that penetrates the second insulating film, the second conductive film, and the first insulating film and reaches the first conductive film; forming a third insulating film in the opening so as to contact a bottom surface and a side surface of the opening; removing the third insulating film at the bottom of the opening to expose the first conductive film at the bottom of the opening; performing at least one treatment selected from the group consisting of a first treatment using a first gas containing silicon (Si) and a second treatment using a second gas containing oxygen (O); a semiconductor film formed in the opening without exposing the substrate to an atmosphere at or above atmospheric pressure after at least one of the processes;

2. 2. The method for manufacturing a semiconductor device according to claim 1, wherein said semiconductor film is in contact with said first conductive film.

3. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the temperature of at least one of the treatments is 300[deg.] C. or less.

4. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the first gas further contains carbon (C), hydrogen (H), or chlorine (Cl).

5. The second gas is oxygen plasma, oxygen gas (O ２ ), or ozone gas (O ３ 2. The method of claim 1, further comprising the steps of:

6. 2. The method for manufacturing a semiconductor device according to claim 1, wherein indium (In) adheres to the third insulating film in contact with the side surface of the opening when the third insulating film at the bottom of the opening is removed.

7. 7. The method for manufacturing a semiconductor device according to claim 6, wherein said first treatment removes indium (In) adhering to said third insulating film in contact with a side surface of said opening.

8. 7. The method for manufacturing a semiconductor device according to claim 6, wherein said second treatment oxidizes indium (In) adhering to said third insulating film in contact with a side surface of said opening.

9. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the first conductive film further contains tin (Sn) and oxygen (O).

10. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor film is an oxide semiconductor.

11. 2. The method for manufacturing a semiconductor device according to claim 1, wherein said third insulating film contains silicon (Si) and oxygen (O).

12. a first supply pipe for supplying at least one gas selected from the group consisting of a first gas containing silicon (Si) and a second gas containing oxygen (O); a second supply pipe for supplying a first source gas containing indium (In); a third supply pipe for supplying a second source gas containing oxygen (O); a chamber to which the first supply pipe, the second supply pipe, and the third supply pipe are connected; Semiconductor manufacturing equipment equipped with

13. A control circuit for controlling a process for the substrate is further provided.

13. The semiconductor manufacturing apparatus according to claim 12, wherein the control circuit controls the loading of the substrate into the chamber, the supply of the at least one gas into the chamber, the formation of a semiconductor film on the substrate by supplying the first source gas and the second source gas into the chamber, and the unloading of the substrate out of the chamber.

14. 13. The semiconductor manufacturing apparatus according to claim 12, wherein a plasma generating device is provided in the first supply pipe.

15. a first supply pipe for supplying at least one gas selected from the group consisting of a first gas containing silicon (Si) and a second gas containing oxygen (O); a second supply pipe for supplying a first source gas containing indium (In); a third supply pipe for supplying a second source gas containing oxygen (O); a first chamber to which the first supply pipe is connected; a second chamber to which the second supply pipe and the third supply pipe are connected; a transfer path that connects the first chamber and the second chamber and is capable of maintaining an interior pressure below atmospheric pressure; Semiconductor manufacturing equipment equipped with

16. A control circuit for controlling a process for the substrate is further provided.

16. The semiconductor manufacturing apparatus of claim 15, wherein the control circuit controls the loading of the substrate into the first chamber, the supply of the at least one gas into the first chamber, the unloading of the substrate out of the first chamber, the movement of the substrate in the transport path maintained at a pressure less than atmospheric pressure, the loading of the substrate into the second chamber, the formation of a semiconductor film on the substrate by supplying the first source gas and the second source gas into the second chamber, and the unloading of the substrate out of the second chamber.

17. 16. The semiconductor manufacturing apparatus according to claim 15, wherein the first supply pipe is provided with a plasma generating device.

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