Substrate holding device, substrate processing device, separation method, and article manufacturing method

Abstract

To provide a substrate holding device, a substrate processing device, a separation method, and an article manufacturing method advantageous for preventing wear of a substrate and a holding unit that holds the substrate.SOLUTION: A substrate stage 1 has a substrate chuck 3 that is a holding unit that holds a substrate 2, a gas channel 10 that is a gas supply unit that supplies gas to a space between the substrate and the holding unit, electromagnetic valves 51-53, and regulators 612-63. When the substrate is separated from the holding unit holding the substrate, the gas supply unit performs supply of gas based on information on an adhesive force between the substrate and the holding unit. This prevents sideslip of the substrate due to excessive supply of gas and wear of the chuck due to too little supply of gas.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate holding device, a substrate processing apparatus, a separation method, and a method for manufacturing an article. [Background technology]

[0002] Substrate processing apparatuses used in the manufacturing process of semiconductor devices, liquid crystal display devices, etc. may include a substrate chuck (substrate holding unit) that holds a substrate. The smoothness with which the substrate chuck holds and releases the substrate is related not only to productivity but also to the wear resistance of the substrate and the substrate chuck.

[0003] Patent Document 1 describes supplying gas to a gap between a base surface of a support table and the substrate through gas flow openings formed in the support table when the substrate is unloaded from the support table. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Special table 2019-505841 publication Summary of the Invention [Problem to be solved by the invention]

[0005] Even if the substrate chuck chucks a substrate and then releases the chuck, an adhesive force still acts between the substrate and the substrate chuck. If the amount of gas supplied when separating the substrate from the substrate chuck is excessive relative to the adhesive force, the substrate will lift up from the substrate chuck and slide sideways. On the other hand, if the amount of gas supplied when separating the substrate from the substrate chuck is insufficient relative to the adhesive force, the substrate will not separate from the substrate chuck, causing wear of the substrate chuck. Since the adhesive force depends on the characteristics of the substrate and the substrate chuck, it is preferable that the supply of gas used to separate the substrate from the substrate chuck is appropriately set each time depending on the adhesive force.

[0006] The present invention provides an advantageous technique for suppressing wear of a substrate and a holder that holds the substrate. [Means for solving the problem]

[0007] According to one aspect of the present invention, there is provided a substrate holding device comprising a holding part for holding a substrate, and a gas supply part for supplying gas between the substrate and the holding part, wherein the gas supply part supplies the gas based on information regarding the adhesive force between the substrate and the holding part when the substrate is separated from the holding part holding the substrate. Effect of the Invention

[0008] According to the present invention, it is possible to provide an advantageous technique for suppressing wear on a substrate and a holder that holds the substrate. [Brief description of the drawings]

[0009] [Figure 1] FIG. 2 is a diagram showing the configuration of a substrate stage. [Diagram 2] FIG. 4 is a diagram showing the functional configuration of a control unit. [Diagram 3] FIG. [Figure 4] FIG. 4 is a diagram for explaining control of gas supply. [Diagram 5] FIG. 4 is a diagram for explaining control of gas supply. [Figure 6] FIG. 2 is a diagram showing the configuration of a substrate stage. [Figure 7] FIG. [Figure 8] 4A to 4C are diagrams illustrating a substrate transfer operation. [Figure 9] FIG. [Figure 10] 4A to 4C are diagrams illustrating a substrate transfer operation. [Figure 11] FIG. 4 is a diagram showing a drive profile of a fine movement stage. [Figure 12] FIG. 13 is a graph showing the time progression of the Z deviation of the fine movement stage. [Figure 13] FIG. 4 is a diagram showing a change in pressure over time during gas supply. [Figure 14] FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus. [Figure 15] 4 is a flowchart illustrating a method for separating a substrate from a substrate chuck. [Figure 16] 1 is a flow chart of a method for manufacturing an article. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0011] First Embodiment The present disclosure relates to a substrate processing apparatus for processing a substrate. The substrate processing apparatus may be, for example, a lithography apparatus for forming a pattern on a substrate, such as an exposure apparatus or an imprint apparatus. Alternatively, the substrate processing apparatus may be an inspection apparatus, such as an overlay inspection apparatus, a CD inspection apparatus, a defect inspection apparatus, or an electrical characteristic inspection apparatus. Alternatively, the substrate processing apparatus may be a processing apparatus, such as an etching apparatus or a film formation apparatus. In the following, the substrate processing apparatus in the present disclosure will be described as an exposure apparatus, which is an example of a lithography apparatus.

[0012] FIG. 14 is a schematic diagram of an exposure apparatus 200 in an embodiment. In this specification and the drawings, directions are shown in an XYZ coordinate system with a horizontal plane as the XY plane. In general, the substrate 2 is placed on the substrate chuck 3 of the substrate stage 1 so that its surface is parallel to the horizontal plane (XY plane). Therefore, in the following, the directions perpendicular to each other in a plane along the surface of the substrate 2 are referred to as the X-axis and Y-axis, and the direction perpendicular to the X-axis and Y-axis is referred to as the Z-axis. In the following, the directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are referred to as the X-direction, Y-direction, and Z-direction, respectively, and the rotation direction around the X-axis, the rotation direction around the Y-axis, and the rotation direction around the Z-axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively.

[0013] In the exposure apparatus 200, exposure light guided from a light source (not shown) through an illumination optical system 202 is irradiated onto an original 203. The original is also called a reticle or a mask. The exposure light that has passed through the original 203 passes through a projection optical system 206 and is irradiated onto a substrate 2. Examples of materials that can be used for the substrate include glass, ceramics, metals, semiconductors, and resins. If necessary, a member made of a material different from that of the substrate may be provided on the surface of the substrate. The substrate is, for example, a silicon wafer, a compound semiconductor wafer, or quartz glass.

[0014] The original stage 204 is equipped with an original chuck (not shown) which is an original holding section. The original stage 204 holds the original 203 by the original chuck. The original stage 204 can move linearly in the X, Y, and Z directions, and can rotate in the θX, θY, and θZ directions, and each of these axes can be controlled independently.

[0015] A laser interferometer (not shown) is provided to measure with high precision the position of the original stage 204. The position of the original stage 204 can be identified from the amount of change in the measurement value obtained by the laser interferometer.

[0016] The original transport system 214 may include an original hand 215, an original pre-alignment stage 216, an original transport robot 217, and a storage unit 218. The original transport robot 217 is an articulated robot. The original transport robot 217 has a hand that holds the original 203, and can move this hand to any position in the XYZ space. The storage unit 218 stores the original 203. The original 203 can be placed in the storage unit 218 from outside the apparatus. The original 203 placed in the storage unit 218 is placed on the original pre-alignment stage 216 by the original transport robot 217, which is an articulated robot.

[0017] The position of the original 203 on the original pre-alignment stage 216 is measured by observing the marks on the original 203 with a microscope (not shown) on the original pre-alignment stage 216. After the measurement, the original hand 215 holds the original 203 on the original pre-alignment stage 216 and drives it in the +Y direction along a guide (not shown) to a position where the original 203 is transferred to the original stage 204. After this drive is completed, the original hand 215 drives in the -Z direction to transfer the original 203 to the original stage 204. The original stage 204 holds the original 203 by vacuum suction. The deviations of the original 203 in the X direction, Y direction, and θZ direction relative to the original pre-alignment stage 216 measured by the original pre-alignment stage 216 can be corrected by changing the position where the original stage 204 receives the original 203.

[0018] The substrate transport system 210 may include a supply hand 211, a collection hand 212, a storage unit 213, a pre-alignment unit 219, a transport robot 220, and a temporary placement table 221. The substrate 2 is stored in the storage unit 213. The transport robot 220 is an articulated robot. The transport robot 220 has a hand for holding the substrate 2, and can move this hand to any position in the XYZ space. The transport robot 220 takes the substrate 2 from the storage unit 213 and places the substrate 2 on the pre-alignment unit 219. In the pre-alignment unit 219, a measurement light is irradiated onto the outer periphery of the substrate 2, and the reflected light is measured by a sensor, thereby measuring the outer position of the substrate 2 relative to the pre-alignment unit 219.

[0019] The supply hand 211 is a transport mechanism that transports the substrate 2 from the pre-alignment unit 219 to the substrate stage 1, specifically, onto the pin members 9 configured in the coarse movement stage 13. The supply hand 211 can hold the substrate 2 by vacuum suction. The recovery hand 212 is a transport mechanism that recovers the substrate 2 from the substrate stage 1 and transports it to the temporary placement table 221. The recovery hand 212 can hold the substrate 2 by vacuum suction.

[0020] The temporary placement table 221 is a table for temporarily placing the substrate 2 that has been retrieved from the substrate stage 1 by the retrieval hand 212. Since the transfer robot 220 cannot directly pick up the substrate from the retrieval hand 212, the transfer robot 220 transfers the substrate 2 via the temporary placement table 221.

[0021] The substrate stage (substrate holding device) 1 may include a coarse movement stage 13 and a fine movement stage 8 mounted on the coarse movement stage 13. A substrate chuck 3 is mounted on the fine movement stage 8. The substrate chuck 3 is a holding unit that holds the substrate 2. The substrate chuck 3 may be a vacuum chuck that adsorbs the lower surface of the substrate 2 to the holding surface by vacuum suction. Alternatively, the substrate chuck 3 may be an electrostatic chuck that adsorbs the lower surface of the substrate 2 to the holding surface by electrostatic action. In the following, the substrate chuck 3 will be described as a vacuum chuck. The fine movement stage 8 is configured to be linearly movable in the X, Y, and Z directions and to be rotatable in the θX, θY, and θZ directions. The substrate stage 1 includes a driving mechanism (not shown) that drives the fine movement stage 8 along each of these axes, and each of these axes can be controlled independently.

[0022] A laser interferometer (not shown) is provided to measure with high precision the position of the fine movement stage 8. The position of the fine movement stage 8 can be identified from the amount of displacement of the measurement value obtained by the laser interferometer.

[0023] The pin members 9 are used when receiving the substrate 2 from the supply hand 211 and when transferring the substrate 2 to the collection hand 212. The pin members 9 can hold the substrate 2 by suction. For example, at least three pin members 9 can be arranged at or near the apexes of a triangle as large as possible in a plane parallel to the holding surface of the substrate chuck 3 in order to stably support the substrate 2. The pin members 9 pass through holes formed in the fine movement stage 8 and the substrate chuck 3, respectively, and are arranged so that the longitudinal axis of the pin members is parallel to the direction perpendicular to the holding surface of the substrate chuck 3 (holding portion) that holds the substrate (i.e., the Z direction). The lower end of the pin member 9 is fixed to the coarse movement stage 13, and the upper end is configured to be able to appear and disappear from the holding surface of the substrate chuck 3. The pin members 9 serve as a support member that supports the substrate 2 by protruding above the holding surface. The movement of the pin members 9 into and out of the holding surface of the substrate chuck 3 can be performed by at least one of the extension and contraction of the pin members 9, the vertical movement of the coarse movement stage 13, and the vertical movement of the fine movement stage 8.

[0024] The coarse movement stage 13 can move linearly in the X and Y directions and rotate in the θZ direction. For example, a capacitance sensor is used to measure the distance between the coarse movement stage 13 and the fine movement stage 8. Based on the result of this measurement, an actuator such as a linear motor is used to control the position of the coarse movement stage 13 so that it follows the position of the fine movement stage 8. The pin member 9 is fixed to the coarse movement stage 13 and therefore moves together with the coarse movement stage 13.

[0025] The off-axis scope 209 can measure alignment marks on the substrate 2 .

[0026] The control unit 100 controls the operation of the exposure apparatus 200. The control unit 100 can include the functions of a driver and a controller that control sensors, actuators, and the like in the exposure apparatus 200.

[0027] The recovery sequence of the substrate 2 in this embodiment will be described below. The recovery sequence of the substrate 2 may include an operation of transferring the substrate 2 from the substrate chuck 3 to the pin members 9 after the exposure is completed. This operation may be performed by driving the substrate chuck 3 and the pin members 9 relatively in the Z direction. Here, an adhesive force acts between the substrate 2 and the substrate chuck 3. In this specification, the adhesive force refers to a force required to apply a force to the substrate 2 and the substrate chuck 3 in a direction in which they move away from each other to separate (separate) them. That is, the adhesive force is related to the ease of separation of the substrate 2 from the substrate chuck 3. Even if the substrate chuck 3 releases the substrate 2 from its holding surface, the adhesive force may remain depending on the characteristics of the holding surface of the substrate chuck 3, the characteristics of the substrate 2, the characteristics of the exposure process, the influence of foreign matter mixed between the substrate 2 and the substrate chuck 3, and the like. In addition, even if the vacuum suction is released when the substrate is unloaded, the pressure does not immediately become atmospheric pressure, and the pressure that does not come off (residual suction force) may become the adhesive force. Furthermore, even when the substrate chuck 3 is an electrostatic chuck, an adhesive force may remain due to the electrostatic chuck or the substrate being charged when the power is off. If the adhesive force is strong, the substrate 2 will be pulled away from the substrate chuck 3 against the adhesive force, which may damage the substrate 2, the substrate chuck 3, or both.

[0028] In this embodiment, therefore, when the substrate 2 is released from the substrate chuck 3, gas is supplied between the substrate 2 and the substrate chuck 3 to facilitate separation of the two. However, if the amount of gas supplied when separating the substrate 2 from the substrate chuck 3 is excessive relative to the adhesive force, the substrate 2 will lift up from the substrate chuck 3 and slide sideways. On the other hand, if the amount of gas supplied when separating the substrate 2 from the substrate chuck 3 is insufficient relative to the adhesive force, the substrate 2 will not separate from the substrate chuck 3, causing wear of the substrate chuck 3. Since the adhesive force is due to the characteristics of the substrate 2, the characteristics of the substrate chuck 3, the characteristics of the exposure process, and the like, the supply of gas for separating the substrate 2 from the substrate chuck 3 needs to be appropriately set each time according to the adhesive force.

[0029] The following describes the holding and release of the substrate 2 by the substrate chuck 3, and the control of the supply of gas between the substrate 2 and the substrate chuck 3.

[0030] 1 is a schematic diagram showing the configuration of a substrate stage 1. The substrate chuck 3 is configured to hold the substrate 2 by reducing the pressure in the space between the substrate 2 and the substrate chuck 3 and vacuum-adhering the substrate 2 to the holding surface. The substrate chuck 3 is held on a fine movement stage 8 by vacuum adsorption. The fine movement stage 8 is mounted on a coarse movement stage 13.

[0031] A gas flow path 10 is disposed in the coarse movement stage 13. The gas flow path 10 is disposed so that a vacuum pump 5 (vacuum source) serving as a negative pressure generating means sucks gas from between the substrate 2 and the substrate chuck 3 through an opening formed on a surface of the substrate chuck 3 facing the substrate 2. The gas flow path 10 is disposed so that gas from a positive pressure tank 6 serving as a positive pressure generating means (gas supply source) is supplied between the substrate 2 and the substrate chuck 3 through the opening. A pressure sensor 20, regulators 41, 61, 62, 63, and solenoid valves 31, 51, 52, 53 are provided on the gas flow path 10. The gas flow path 10 is, for example, a pipe through which gas flows (for flowing gas). The gas flow path 10, the regulator, the solenoid valve, and the like, which are members or mechanisms for supplying gas to the space between the substrate 2 and the substrate chuck 3, may be collectively referred to as a gas supply unit. Alternatively, the gas flow path 10 may be referred to as a gas supply unit.

[0032] A plurality of openings 7 (see FIG. 3) are formed on the surface of the substrate chuck 3 facing the substrate 2. The gas flow path 10 branches and connects to each opening. The gas flow path 10 is connected to a vacuum pump 5 via an electromagnetic valve 31 and a regulator 41, and is connected to a positive pressure tank 6 via electromagnetic valves 51, 52, and 53 and regulators 61, 62, and 63. In general, the vacuum pump 5 and the positive pressure tank 6 are configured as factory equipment, and therefore are installed outside the substrate stage 1.

[0033] The pressure inside the gas flow path 10 is measured by a pressure sensor 20. In one example, the pressure sensor 20 is disposed so as to measure the pressure inside the gas flow path 10 at a position closer to the vacuum pump than the branch of the gas flow path 10 and closer to the substrate chuck 3 than the solenoid valves 31, 51, 52, and 53. This is to enable the pressure sensor 20 to accurately measure the pressure in the space between the substrate 2 and the substrate chuck 3.

[0034] The regulator 41 and the solenoid valve 31 are disposed between the vacuum pump 5 and the substrate chuck 3. The regulator 41 is configured to adjust the pressure in the gas flow path 10 to a desired vacuum pressure. The solenoid valve 31 is disposed on the substrate chuck 3 side of the regulator 41 in order to supply the pressure adjusted by the regulator 41 to the substrate chuck 3. When the solenoid valve 31 is turned ON, the vacuum pump 5 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the solenoid valve 31 is turned OFF, the pressure adjustment in the space between the substrate 2 and the substrate chuck 3 is no longer performed.

[0035] The regulators 61, 62, 63 and the solenoid valves 51, 52, 53 are disposed between the positive pressure tank 6 and the substrate chuck 3. The regulators 61, 62, 63 are configured to adjust the supply pressure from the positive pressure tank 6 in the gas flow path 10. The ability to adjust the supply pressure means that the supply flow rate can also be adjusted. The solenoid valves 51, 52, 53 are disposed on the gas flow path 10 on the substrate chuck 3 side with respect to the regulators 61, 62, 63. When the solenoid valves 51, 52, 53 are turned ON, the positive pressure tank 6 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the solenoid valves 51, 52, 53 are turned OFF, the pressure in the space between the substrate 2 and the substrate chuck 3 is no longer adjusted. Note that, although three sets of regulators and solenoid valves are shown between the positive pressure tank 6 and the substrate chuck 3 in FIG. 1, the number of sets is not limited to a specific number. There may be one set, or there may be four or more sets. Also, instead of the combination of the solenoid valve and the regulator, a servo valve whose opening and closing degree can be freely set may be configured.

[0036] When the substrate 2 is held by the substrate chuck 3 through vacuum suction, the solenoid valve 31 is turned ON and the solenoid valves 51, 52, and 53 are turned OFF. This allows the pressure in the space between the substrate 2 and the substrate chuck 3 to be reduced by the vacuum pump 5. When the substrate 2 is released from the substrate chuck 3, the solenoid valve 31 is turned OFF and at least one of the solenoid valves 51, 52, and 53 is turned ON. This allows the space between the substrate 2 and the substrate chuck 3 to be pressurized with gas from the positive pressure tank 6.

[0037] By changing the settings of the regulators 61, 62, and 63, respectively, it is possible to change the flow rate and pressure of the gas filling the space between the substrate 2 and the substrate chuck 3 when any one of the solenoid valves 51, 52, and 53 is turned ON. In one example, the regulators 61, 62, and 63 are set so that the flow rate of gas supplied increases in the order of the regulators 61, 62, and 63. When releasing the substrate 2 from the substrate chuck 3, the control unit 100 controls the supply of gas through the gas flow path 10 and the opening 7 based on information (information on ease of separation) regarding the adhesive force of the substrate 2 to the holding surface obtained in advance. For example, the control unit 100 determines which of the solenoid valves 51, 52, and 53 to turn ON and the gas supply time based on the information (information on ease of separation) regarding the adhesive force of the substrate 2 to the holding surface.

[0038] The control unit 100 may be configured, for example, by a general-purpose or dedicated processor with a program built into a memory. Alternatively, the control unit 100 may be configured by a PLD (abbreviation of Programmable Logic Device) such as an FPGA (abbreviation of Field Programmable Gate Array) or an ASIC (abbreviation of Application Specific Integrated Circuit). Alternatively, the control unit 100 may be configured by a combination of all or part of a processor, a PLD, and an ASIC. The control unit 100 may be configured inside the exposure apparatus 200 or may be configured outside the exposure apparatus 200. When the control unit 100 is configured outside the exposure apparatus 200, for example, the functions of the control unit 100 are installed in a server device or the like communicably connected to the exposure apparatus 200.

[0039] 2 shows the functional configuration of the control unit 100. The control unit 100 can include an instruction unit 110, a storage unit 120, and a processing unit 130. The instruction unit 110 instructs the amount of control for each driving unit including the fine movement stage 8. The storage unit 120 stores various data and programs related to exposure control. The processing unit 130 executes various processes related to exposure control. For example, the processing unit 130 calculates the drive target positions of the substrate stage 1 and the original stage 204. The processing unit 130 also executes an exposure sequence and a substrate supply and recovery sequence according to the control program stored in the storage unit 120.

[0040] 2 shows an example in which the control unit 100 includes the storage unit 120 and the processing unit 130, the storage unit 120 and the processing unit 130 may be provided separately from the control unit 100.

[0041] Fig. 3 is a plan view of the substrate chuck 3 as viewed from the +Z direction. The substrate chuck 3 is provided with an annular seal portion 60 at a position along the outer periphery of the substrate chuck 3. However, the presence or absence, number, and arrangement of the seal portion 60 are not limited to the example shown in Fig. 3. For example, the substrate chuck 3 may not be provided with a seal portion. Alternatively, a plurality of seal portions may be provided.

[0042] The surface of the substrate chuck 3 is provided with a plurality of protrusions (not shown), and the upper surfaces of these protrusions can serve as a holding surface for holding the substrate 2. These protrusions are called chuck pins. The substrate chuck 3 is provided with openings 7 connected to a gas flow path 10. Although twelve openings 7 are shown in FIG. 3, the arrangement and number of the openings 7 are not limited to the example shown in FIG. 3.

[0043] The operation of holding the substrate 2 by the substrate chuck 3 through vacuum suction is performed by exhausting the gas in the space between the substrate 2 and the substrate chuck 3 through the opening 7. The provision of a seal portion 60 between the substrate 2 and the substrate chuck 3 prevents the inflow of air from the surroundings, making vacuum suction possible.

[0044] The operation of releasing the substrate 2 from the substrate chuck 3 (operation of separating the substrate 2 from the substrate chuck 3) is performed by supplying gas between the substrate 2 and the substrate chuck 3 through the opening 7. Here, if the amount of gas supplied (pressure and flow rate) or the gas supply time is excessive relative to the adhesive force, the substrate 2 will lift up from the substrate chuck 3 and slide sideways. On the other hand, if the amount of gas supplied or the gas supply time when separating the substrate 2 from the substrate chuck 3 is insufficient relative to the adhesive force, the substrate 2 will not separate from the substrate chuck 3, causing wear of the substrate chuck when the substrate 2 is picked up. A detailed explanation of the adhesive force and a method of optimizing the amount of gas supplied relative to the adhesive force will be given later.

[0045] A method for transferring the substrate 2 from the substrate chuck 3 to the pin members 9 will be described with reference to Fig. 8. Fig. 8 shows a schematic cross-sectional view of the substrate stage 1. The fine movement stage 8 moves in the Z direction along the longitudinal direction of the pin members 9. The fine movement stage 8 can move in the Z direction while tilting in accordance with the Z positional relationship of the three pin members 9. The pin members 9 are placed on a coarse movement stage 13 that can be driven in the X and Y directions. The Z direction position of the pin members 9 can be measured using, for example, an interferometer or a capacitance sensor (not shown).

[0046] The pin member 9 is connected to the vacuum pump 5 via a gas flow path 70. A regulator 73 and an electromagnetic valve 72 are provided between the vacuum pump 5 and the pin member 9. The regulator 73 is configured to adjust the vacuum pressure to a desired level. The electromagnetic valve 72 is disposed closer to the pin member 9 than the regulator 73. This is to supply the pressure adjusted by the regulator 73 to the substrate chuck 3. When the electromagnetic valve 72 is turned on, the vacuum pump 5 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3, and when the electromagnetic valve 72 is turned off, the pressure adjustment in the space between the substrate 2 and the substrate chuck 3 is no longer performed. In addition, a pressure sensor 71 is disposed to monitor the pressure between the pin member 9 and the substrate 2. The pressure sensor 71 needs to be disposed closer to the pin member 9 than the electromagnetic valve 72. In FIG. 8, the pressure sensor 71, the electromagnetic valve 72, and the regulator 73 are disposed outside the coarse movement stage 13, but they may be disposed inside the coarse movement stage.

[0047] In Fig. 8(a), the fine movement stage 8 is positioned on the +Z direction side, and the substrate chuck 3 is vacuum-adsorbing the substrate 2. In Fig. 8(b), the fine movement stage 8 moves in the -Z direction, causing the pin members 9 to come into contact with the substrate 2, and the fine movement stage 8 stops moving. The control unit 100 then releases the substrate chuck 3 from its suction hold on the substrate 2. At this time, the control unit 100 controls the supply of gas via the gas flow path 10 and the opening 7, based on information regarding the adhesive force of the substrate 2 relative to the holding surface.

[0048] Thereafter, the solenoid valve 72 is turned ON, so that the pin members 9 adsorb and hold the substrate 2. Then, as shown in Fig. 8(c), while the pin members 9 adsorb and hold the substrate 2, the fine movement stage 8 further moves in the -Z direction. In this manner, the substrate 2 is transferred from the substrate chuck 3 to the pin members 9.

[0049] 8, the fine movement stage 8 moves to transfer the substrate 2 from the substrate chuck 3 to the pin members 9, but it is only necessary that the relative positions of the substrate chuck 3 and the pin members 9 can be changed. For example, the entirety or the tip of the pin members 9 may move in the +Z direction. Changing the relative positions of the substrate chuck 3 and the pin members 9 is synonymous with moving the substrate chuck 3 and the pin members 9 relative to each other.

[0050] 9 is a plan view of the substrate chuck 3 as viewed from the +Z direction. A plurality of protrusions (chuck pins) (not shown) are provided on the surface of the substrate chuck 3, and the upper surfaces of these protrusions can serve as a holding surface for holding the substrate 2. An annular seal portion 60 is provided on the outer periphery of the substrate chuck 3 to prevent air from flowing out of the substrate chuck 3 when the substrate 2 is vacuum-sucked. The substrate chuck 3 has an opening 7 connected to a gas flow path 10. The substrate chuck 3 holds the substrate 2 by vacuum suction through the opening 7. The space between the substrate 2 and the chuck pins is in a vacuum state, and the substrate 2 can be suction-held with a uniform force.

[0051] The substrate chuck 3 and the fine movement stage 8 are formed with holes 14 for passing the pin members 9 in the Z direction, and the fine movement stage 8 can be driven in the Z direction without interfering with the pin members 9. Fig. 9 shows the holes 14 through which the pin members 9 pass. Fig. 9 shows a configuration in which three pin members 9 are installed, but there is no limit to the number of pin members 9 as long as the substrate 2 can be stably held depending on the size, material, and mass of the substrate 2.

[0052] In the example shown in FIG. 8, the fine movement stage 8 moves to cause the pin members 9 to adsorb and hold the substrate 2, but it is sufficient as long as the relative position between the substrate chuck 3 and the pin members 9 can be changed. For example, the entire pin members 9 or the tip portions thereof may move in the +Z direction. Changing the relative position between the substrate chuck 3 and the pin members 9 is synonymous with moving the substrate chuck 3 and the pin members 9 relatively. Alternatively, a configuration may be adopted in which the pin members 9 adsorb and hold the substrate 2 by extending the pin members 9 rather than by moving the fine movement stage 8. In this way, the substrate stage 1 may include a drive unit that drives the fine movement stage 8 and / or drives or deforms the pin members 9 to perform the operation of separating the substrate 2 from the substrate chuck 3.

[0053] 10 shows an example in which the pin members 9 adsorb and hold the substrate 2 by extending the pin members 9 rather than by moving the fine movement stage 8. In the following, the movement of the positions of the tips of the pin members 9 as the pin members 9 extend and retract is sometimes referred to as "movement of the pin members 9."

[0054] In FIG. 10(a), the tip of the pin member 9 on the +Z direction side is located on the -Z direction side of the holding surface of the substrate chuck 3 and is not in contact with the substrate 2. In this state, the substrate chuck 3 holds the substrate 2. In FIG. 10(b), the pin member 9 extends in the +Z direction, bringing the pin member 9 into contact with the substrate 2. The extension of the pin member 9 stops at the position where it comes into contact with the substrate 2. Thereafter, the control unit 100 releases the substrate 2 from the suction holding by the substrate chuck 3. At this time, the control unit 100 controls the supply of gas via the gas flow path 10 and the opening 7 based on information regarding the adhesive force of the substrate 2 to the holding surface (information regarding the ease of separation).

[0055] Thereafter, the solenoid valve 72 is turned ON, so that the pin members 9 adsorb and hold the substrate 2. Then, as shown in Fig. 10(c), while the pin members 9 adsorb and hold the substrate 2, the pin members 9 further extend in the +Z direction. In this manner, the substrate 2 is transferred from the substrate chuck 3 to the pin members 9.

[0056] 10, the pin members 9 are extended to transfer the substrate 2 from the substrate chuck 3 to the pin members 9, but the substrate 2 may be transferred from the substrate chuck 3 to the pin members 9 by moving the entire pin members 9. Note that a drive unit that drives the pin members 9 may be included in the pin members 9 or may be connected to the pin members 9.

[0057] Fig. 11 shows a drive profile of the fine movement stage 8. Fig. 11 shows the relationship between time and the Z direction position of the fine movement stage 8 in the operation of transferring the substrate 2 from the substrate chuck 3 to the pin members 9. Note that the amount of change in the Z direction position of the fine movement stage 8 is synonymous with the amount of change in the Z direction position of the substrate chuck 3.

[0058] In the first section, the instruction unit 110 instructs the fine movement stage 8 to move in the -Z direction at high speed using the first position stored in the storage unit 120 as the target position. When the fine movement stage 8 is driven in the -Z direction, the first position is set to be the same as the Z direction position of the fine movement stage 8 when the substrate 2 and the pin member 9 come into contact with each other, or a position on the +Z direction side of that. Here, an example is shown in which the fine movement stage 8 moves in the -Z direction as in FIG. 8. However, when the pin member 9 is moved in the +Z direction as in FIG. 10, only the direction of movement is different, so the -Z direction and the +Z direction can be interchanged in FIG. 11. In the figures and explanations described later, when the pin member 9 is moved in the +Z direction, the -Z direction and the +Z direction can be interchanged in the figures and explanations described later. In addition, in a form in which both the fine movement stage 8 and the pin member 9 are driven, the movement of the fine movement stage 8 in the Z direction in the explanations of FIG. 11 and the figures described later may be replaced with an explanation of the relative movement of the fine movement stage 8 and the pin member 9.

[0059] In the second section, the control unit 100 moves the fine movement stage 8 at a low speed in the -Z direction and monitors the drive current value in driving the fine movement stage 8. By monitoring the drive current value when moving the fine movement stage 8 in the -Z direction, it is possible to detect the drive current value that changes when the substrate 2 and the pin members 9 come into contact with each other, and to detect that the substrate 2 and the pin members 9 have come into contact with each other. The reason for moving the fine movement stage 8 at a low speed in the second section is that if the substrate 2 comes into contact with the pin members 9 at high speed, the substrate 2 and the pin members 9 may be damaged. When the control unit 100 detects that the pin members 9 and the substrate 2 have come into contact with each other by monitoring the drive current value, it stops the movement of the fine movement stage 8 in the -Z direction and ends the second section. The control unit 100 may update the value of the first position stored in the storage unit 120 with the value of the Z direction position of the fine movement stage 8 when the contact between the pin members 9 and the substrate 2 is detected in the second section. By updating the first position in this way, the time required for the second section can be reduced.

[0060] Furthermore, if the coordinates of the fine movement stage 8 when the substrate 2 and pin members 9 come into contact are the same as the first position, the substrate 2 and pin members 9 come into contact when moved to the first position. In this case, contact between the substrate 2 and pin members 9 is detected by the drive current value at the same time as the start of the second section, so the fine movement stage 8 is not moved at low speed in the second section, but transitions to the third section. Note that if it is known that the coordinates of the fine movement stage 8 when the substrate 2 and pin members 9 come into contact are the same as the first position, the second section may be omitted, and a transition to the third section may be made after the first section.

[0061] In the third section, the control unit 100 stops suction of the gas between the substrate 2 and the substrate chuck 3, and in parallel with this, supplies gas between the substrate 2 and the substrate chuck 3. At this time, by supplying gas according to the adhesive force, the phenomenon that the substrate 2 floats from the substrate chuck 3 and slides sideways is prevented. In addition, in the fourth section described later, the substrate 2 is forcibly separated from the substrate chuck 3 while the adhesive force remains, and thus the wear of the substrate chuck 3 caused by the sliding between the substrate 2 and the substrate chuck 3 can be suppressed. In the third section, the pin members 9 also start suctioning the gas between the substrate 2 and the pin members 9. In the third section, the control unit 100 estimates the adhesive force based on the characteristics of the substrate 2, the characteristics of the substrate chuck 3, the characteristics of the exposure process, etc., optimizes the gas supply parameters, and can supply the gas. The estimation of the adhesive force and the supply of the gas will be described later.

[0062] In the fourth section, the control unit 100 moves the fine movement stage 8 at a low speed in the -Z direction to separate the substrate 2 and the substrate chuck 3 by a small distance. If the fine movement stage 8 is moved at a high speed in the -Z direction to forcibly separate the substrate 2 and the substrate chuck 3 while there is an adhesive force, the substrate 2 will slide sideways on the substrate chuck 3, causing wear on the substrate chuck 3. Wear on the substrate chuck 3 will affect the subsequent suction and holding of the substrate 2. Therefore, in order to reduce wear on the substrate chuck 3, gas is supplied between the substrate 2 and the substrate chuck 3 in the third section according to the adhesive force.

[0063] In the fifth section, the fine movement stage 8 is moved at high speed in the −Z direction to a final position in the Z direction.

[0064] If the adhesive force between the substrate 2 and the substrate chuck 3 can be reduced by supplying gas in the third section, the moving speed of the fine movement stage 8 in the fourth section can be increased. For example, it is also possible to eliminate the fifth section described below and drive the fine movement stage 8 at high speed in the -Z direction to the final position in the Z direction.

[0065] A method for estimating the adhesive force will be described. The adhesive force is a resultant force of the suction pressure acting between the substrate 2 and the substrate chuck 3 and the adhesive force between the substrate 2 and each chuck pin of the substrate chuck 3. The adhesive force can be estimated based on the characteristics of the substrate 2, the characteristics of the substrate chuck 3, the characteristics of the exposure process, etc. In one example, the adhesive force can be estimated based on at least one of the characteristics of the substrate 2 and the characteristics of the substrate chuck 3.

[0066] The characteristics of the substrate 2 include, for example, at least one of the amount of warping of the substrate 2, the roughness of the surface (rear surface) of the substrate 2 that contacts the holding surface of the substrate chuck 3, the type of film formed on the substrate 2, the material of the substrate 2, and the thickness of the substrate 2. For example, if the substrate 2 is warped, the adhesion between the substrate 2 and the substrate chuck 3 is reduced. This is because the warping of the substrate 2 causes stress in the direction in which the substrate 2 moves away from the substrate chuck 3, decreasing the degree of adhesion. On the other hand, if the substrate 2 is not warped, the degree of adhesion is high and the adhesion is strong. The roughness of the rear surface of the substrate 2 also affects the adhesion. For example, if the rear surface of the substrate 2 is not rough, the substrate 2 and the substrate chuck 3 are firmly attached to each other. This is a state in which the adhesion is strong. On the other hand, if the rear surface of the substrate 2 is rough, the substrate 2 and the substrate chuck 3 are not in close contact with each other, resulting in a weak adhesion. In addition, if a film is formed on the rear surface of the substrate, the type of film may affect the adhesion. Furthermore, the material and thickness of the substrate 2 also affect the weight of the substrate 2. The heavier the substrate, the stronger the adhesion between the substrate 2 and the substrate chuck 3. This is a state in which the adhesive force is strong.

[0067] The characteristics of the substrate chuck 3 include at least one of the uniformity of the chuck pin height (flatness of the holding surface), the surface coating of the chuck pin (surface roughness of the holding surface), the thickness of the chuck pin, the material, etc. The more uniform the chuck pin height is (the flatter the holding surface is), the stronger the adhesion between the substrate 2 and the substrate chuck 3, resulting in a stronger state of adhesion. Also, the thicker the chuck pin is, the larger the contact area between the holding surface of the substrate chuck 3 and the substrate 2 is, resulting in a stronger state of adhesion. When the chuck pin is made of a material with fine particles, for example, the substrate 2 and the substrate chuck 3 adhere to each other firmly, resulting in a stronger state of adhesion.

[0068] The characteristics of the exposure process may include the exposure time, the exposure amount, and the presence or absence of θ correction drive. For example, if the exposure time is long, the time during which the substrate 2 and the substrate chuck 3 are vacuum-adsorbed is long, and the adhesion between the substrate 2 and the substrate chuck 3 becomes strong. If the exposure amount is large, the substrate 2 expands due to heat. During exposure, the substrate 2 is vacuum-adsorbed on the substrate chuck 3, so the back surface of the substrate 2 does not expand, although internal stress acts on it. However, when the vacuum adsorption is released, the internal stress is released and the substrate 2 expands. When the substrate 2 shifts slightly laterally on the substrate chuck 3, the adhesive force between the substrate 2 and the substrate chuck 3 weakens. Also, in the exposure sequence, when the alignment mark is observed with an off-axis scope, the substrate 2 may be shifted in the θZ direction on the substrate chuck 3. In order to rotate the substrate 2 in the θZ direction on the substrate stage 1, an operation called θ correction drive as follows may be performed. An example will be described in which the substrate 2 is rotated by 200 μrad. The control unit 100 rotates the fine movement stage 8 by 200 μrad from the 0 μrad position. Next, the control unit 100 transfers the substrate 2 from the substrate chuck 3 to the pin member 9. In this state, the control unit 100 rotates the fine movement stage 8 by -200 μrad and returns it to the 0 μrad position. The substrate 2 on the pin member 9 is not affected by this rotation. In this state, the control unit 100 transfers the substrate 2 to the substrate chuck 3 again. Then, the substrate 2 is rotated by 200 μrad relative to the substrate chuck 3. This method makes it possible to correct the deviation in the θZ direction. Once, the substrate 2 is released from the substrate chuck 3 and vacuum-adsorbed again, which is equivalent to a change in the exposure time. In this way, the adhesion force also changes depending on the exposure process.

[0069] In this way, if the respective characteristics of the substrate 2, the substrate chuck 3, and the exposure process are known, it is possible to estimate the adhesive force acting between the substrate 2 and the substrate chuck 3. This adhesive force can be estimated using a simulator (not shown) that models the substrate 2 and the substrate chuck 3.

[0070] Next, a simulation of the change in adhesive force when the amount of gas supplied and the gas supply time are changed will be described. The greater the amount of gas supplied, the weaker the adhesive force between the substrate 2 and the substrate chuck 3. Also, even if the amount of gas supplied is the same, the longer the supply time, the weaker the adhesive force between the substrate 2 and the substrate chuck 3. Parameters for the amount of gas supplied and the gas supply time are determined so that the adhesive force approaches zero after gas supply. These are set as optimal parameters for gas supply. In this way, information regarding the adhesive force of the substrate 2 relative to the holding surface of the substrate chuck 3 (information regarding the ease of separation) can be obtained in advance.

[0071] The control of gas supply will be described with reference to Fig. 4(a). Fig. 4(a) shows an example of the transition of the gas supply flow rate over time when the substrate 2 is released from the substrate chuck 3. Fig. 4(a) shows that the gas supply flow rate is constant when each solenoid valve is turned ON. Since the gas supply flow rates are set to increase in the order of regulators 61, 62, and 63, the gas supply flow rates supplied to the substrate 2 and substrate chuck 3 increase in the order of solenoid valves 51, 52, and 53 being turned ON.

[0072] FIG. 4(a) is a diagram assuming a case where the adhesive force between the substrate 2 and the substrate chuck 3 is large. The gas supply amount and gas supply time are determined based on the results of a simulation performed in advance using the characteristics of the substrate 2 and the characteristics of the substrate chuck 3. The determined gas supply amount and gas supply time are stored in the memory unit 120. In FIG. 4(a), the control unit 100 (instruction unit 110) turns on the solenoid valve 51 in accordance with the gas supply amount stored in the memory unit 120. The length of time for which the solenoid valve 51 is turned on also follows the gas supply time stored in the memory unit 120.

[0073] FIG. 4(b) illustrates an example of the change in adhesive force between the substrate 2 and the substrate chuck 3 while gas is being supplied under the gas supply control shown in FIG. 4(a). During gas supply, the adhesive force gradually weakens. If the adhesive force is weakened by gas supply to the optimum point shown in FIG. 4(b), the substrate 2 will not slip on the substrate chuck 3 and the substrate chuck 3 will not wear out. The point at which the adhesive force is 0 is not set as the optimum point because a small amount of adhesive force is left to prevent the substrate 2 from slipping.

[0074] By changing the solenoid valve that is turned ON, it is possible to control the amount of gas supplied between the substrate 2 and the substrate chuck 3. Also, it is possible to control the solenoid valve to be turned OFF and stop the gas supply after a predetermined time has elapsed since the start of the gas supply. This makes it possible to create a state in which the substrate 2 does not slide sideways on the substrate chuck 3 and the substrate chuck 3 is not worn.

[0075] By setting optimal parameters for gas supply, the goal is to make the adhesive force acting between the substrate 2 and the substrate chuck 3 approach zero after gas supply. If the adhesive force becomes negative, the gas supply is excessive, causing the substrate 2 to slide sideways on the substrate chuck 3. Conversely, if the adhesive force is too strong, the substrate 2 will be worn away when it is peeled off from the substrate chuck 3.

[0076] The gas supply control described above is effective when a specific type of substrate is placed in the exposure apparatus. In reality, substrates with different characteristics are placed in the exposure apparatus. In mass production factories for semiconductor devices, a specific number of substrates (e.g., 25 substrates) that have undergone the same manufacturing process are generally managed as one lot. Therefore, exposure processing jobs are input on a lot-by-lot basis. It is expected that the characteristics of the substrates will differ from lot to lot.

[0077] In one example, the optimum parameters of the gas supply are calculated in advance by performing a simulation while changing the characteristics of the substrate. The characteristics of the substrate and the optimum parameters of the gas supply are associated and stored in the storage unit 120. For example, the optimum parameters of the gas supply when the warpage amount, which is one of the characteristics of the substrate, is 50 μm are obtained in advance, and the warpage amount of 50 μm and the parameters of the gas supply at that time are associated and stored in the storage unit 120. Similarly, the optimum parameters of the gas supply when the warpage amount is 100 μm are obtained in advance, and the warpage amount of 100 μm and the parameters of the gas supply at that time are associated and stored in the storage unit 120. When the substrate 2 with a warpage amount of 50 μm is placed on the substrate stage 1, an input that the warpage amount of the substrate 2 is 50 μm is given to the control unit 100. The processing unit 130 retrieves the parameters of the gas supply corresponding to the warpage amount of 50 μm from the storage unit 129. The processing unit 130 transfers the operation amount of the selected solenoid valve to the instruction unit 110 based on the retrieved parameters. The instruction unit 110 issues an instruction on the amount of operation to the selected solenoid valve.

[0078] The substrate characteristics may be input to the control unit 100 by a user via a user interface. Alternatively, the substrate characteristics may be input to the control unit 100 via an external device. The external device may be, for example, a measuring instrument that measures the amount of warping of the substrate. Alternatively, the substrate characteristics may be measured in the pre-alignment unit 219, and the measurement results may be input to the control unit 100. Alternatively, information on the film type as a substrate characteristic may be input to the control unit 100 from a film forming apparatus.

[0079] Furthermore, the characteristics of the substrate chuck 3 may differ. For example, assume that the weight of the substrate is heavy and the chuck pin of the substrate chuck 3 is thick. In this case, a simulation is performed while changing the characteristics of the substrate, and optimal gas supply parameters are calculated for each characteristic.

[0080] The characteristics of the substrate and the characteristics of the substrate chuck are input to the control unit 100. The processing unit 130 retrieves parameters corresponding to this input from the storage unit 120. The processing unit 130 transfers the operation amount of the selected solenoid valve based on the retrieved parameters to the instruction unit 110. The instruction unit 110 instructs the selected solenoid valve on the operation amount. The characteristics of the substrate chuck may be input to the control unit 100 by a user via a user interface. Alternatively, the type of the substrate chuck 3 may be converted into the characteristics of the substrate chuck 3 and input to the control unit 100. For example, the type of the chuck is printed on the substrate chuck 3. The printing may be characters such as Japanese, English, or numbers, or may be a barcode or a two-dimensional barcode. A reader for reading this printing is disposed in the device, and the type of the substrate chuck 3 is identified based on the results read by the reader, and the information is converted (specified) into information such as the thickness and material of the pins, which are characteristics of the substrate chuck 3, and input to the control unit 100.

[0081] In the above, an example has been described in which gas supply is performed based on optimal parameters obtained in advance by simulation. By obtaining the parameters in advance, the amount of calculation in the processing unit 130 can be reduced. In addition, the time required to release the substrate chuck 3 from the substrate 2 can be shortened.

[0082] If the calculation time is acceptable, the characteristics of the substrate 2 and the characteristics of the substrate chuck 3 can be provided as input to the control unit 100 to execute a simulator in the processing unit 130. The processing unit 130 as a simulator calculates an adhesive force based on the characteristics of the substrate 2 and the characteristics of the substrate chuck 3, and determines optimal parameters for the substrate according to the calculated adhesive force. Thereafter, the processing unit 130 can instruct the instruction unit 110 to operate the solenoid valve.

[0083] In addition, in a method for measuring adhesive force, a plurality of substrates with different characteristics and substrate chucks with different characteristics are prepared, and gas is supplied and adhesive force is measured while changing the combination. This makes it possible to obtain the relationship between the adhesive force and the characteristics of the substrate and the characteristics of the substrate chuck. Based on this relationship, the control unit 100 can provide parameters for gas supply according to the adhesive force.

[0084] Furthermore, in the third section (FIG. 11) where gas is supplied, a pressure sensor 71 that measures the pressure between the substrate 2 and the pin members 9 can be used to detect lateral slippage of the substrate. In the third section, the solenoid valve 72 is turned ON and the substrate 2 is held in a vacuum by the pin members 9. If an excessive amount of gas is supplied between the substrate 2 and the substrate chuck 3, the substrate 2 and the pin members 9 are pulled apart, causing the substrate 2 to slip. Air flows into the pin members 9, and the pressure in the gas flow path 70 increases. By detecting the increase in pressure in the gas flow path 70 using the pressure sensor 71, lateral slippage of the substrate can be detected.

[0085] 15 is a flowchart showing a method for separating the substrate 2 from the substrate chuck 3. First, an acquisition step (S110) is performed to acquire information regarding the adhesive force between the substrate 2 and the substrate chuck 3. Next, a supply step (S120) is performed to supply gas between the substrate 2 and the substrate chuck 3 based on the information regarding the adhesive force acquired in the acquisition step. Then, after the supply of gas is started in the supply step, a separation step (S130) is performed to separate the substrate 2 from the substrate chuck 3.

[0086] The substrate stage (substrate holding device) 1 of this embodiment has a substrate chuck (holding unit) 3 that holds the substrate 2, and a gas supply unit that supplies gas between the substrate 2 and the substrate chuck 3. When the substrate 2 is separated from the substrate chuck 3 that holds the substrate 2, the gas supply unit supplies gas based on information regarding the adhesive force between the substrate 2 and the substrate chuck 3. This makes it possible to suppress wear of the substrate 2 and the substrate chuck 3.

[0087] <Second embodiment> In the first embodiment, the adhesive force is estimated according to the characteristics of the substrate and the characteristics of the substrate chuck, etc. In the second embodiment, a method of calculating the adhesive force from the measurement value of the pressure sensor 20 will be described.

[0088] The control unit 100 monitors the measurement value of the pressure sensor 20 when the vacuum suction of the substrate 2 by the substrate chuck 3 is released and gas is being supplied. FIG. 13 shows the change in pressure over time from the start of gas supply after the release of vacuum suction. The horizontal axis shows time, and the vertical axis shows pressure. As gas is supplied, the pressure in the space between the substrate 2 and the substrate chuck 3 increases over time. When the measurement value of the pressure sensor 20 shows 0, the pressure in the space between the substrate 2 and the substrate chuck 3 becomes 0. From this point on, a force is generated that counteracts the adhesive force between the substrate 2 and the chuck pin of the substrate chuck 3. At a certain time, air flows in from between the seal portion 60, and the pressure between the substrate 2 and the substrate chuck 3 decreases. At this time, it is assumed that the substrate 2 and the chuck pin of the substrate chuck 3 are separated, so the pressure immediately before the pressure decrease becomes the adhesive force. If the pressure does not decrease, it is recommended to increase the amount of gas supplied.

[0089] Based on this adhesion force, the simulation described in the first embodiment can be used to find optimal gas supply parameters. Also, since the adhesion force can be found using the pressure sensor 20 as described above, the gas supply parameters can be optimized within the exposure apparatus without using a simulator. For example, just before the pressure measured by the pressure sensor 20 shown in FIG. 13 starts to drop, the adhesion force is at the optimal point shown in FIG. 4(b). By stopping the gas supply just before the pressure measured by the pressure sensor 20 starts to drop, the amount of gas supplied can also be optimized within the exposure apparatus.

[0090] Moreover, the method of determining the adhesive force from the measurement value of the pressure sensor 20 of this embodiment and the method of estimating the adhesive force described in the first embodiment may be used in combination. For example, the adhesive force may be estimated by the method described in the first embodiment, and the adhesive force may be determined using both the estimation result and the adhesive force determined from the measurement value of the pressure sensor 20. Specifically, a correction value may be determined by multiplying the difference between the adhesion force estimation result and the adhesion force value determined from the measurement value of the pressure sensor 20 by a coefficient, and the adhesion force estimation result may be corrected by the determined correction value.

[0091] <Third embodiment> As described above, the fine movement stage 8 can be driven in the Z direction (first direction perpendicular to the holding surface) by a driving mechanism (not shown). In addition, the position of the fine movement stage 8 in the Z direction at that time can be measured by a laser interferometer (measurement unit) (not shown).

[0092] In the second embodiment, a method for determining the adhesive force from a pressure value measured by the pressure sensor 20 has been described. In the third embodiment, a method for determining the adhesive force from a Z deviation has been described. The Z deviation refers to the difference between a target position in the Z direction of the substrate chuck 3 and a current position in the Z direction of the substrate chuck 3 measured by a laser interferometer (measurement unit). This is equivalent to the difference between a target position in the Z direction of the fine movement stage 8 indicated by the indication unit 110 and a position in the Z direction of the fine movement stage 8 measured by a laser interferometer (not shown). This is also equivalent to the difference between a target position in the Z direction of the pin members 9 and a position in the Z direction of the pin members 9 measured by a laser interferometer (not shown).

[0093] The adhesive force can be obtained from the Z deviation in the fourth section (FIG. 11). FIG. 12 is a diagram showing the time transition of the Z deviation. In FIG. 12, D1 indicates the start time of the fourth section (the end time of the third section), and D2 indicates the end time of the fourth section (the start time of the fifth section). In this embodiment, the control unit 100 controls the fine movement stage 8 based on the Z deviation (first condition) acquired in advance. As described above, when the fine movement stage 8 is moved in the -Z direction at a low speed in the fourth section, the substrate 2 and the substrate chuck 3 may be in a state where they are difficult to separate due to the adhesive force. In that case, the fine movement stage 8 cannot move to the target position instructed by the instruction unit 110 (the substrate chuck 3 or the pin member 9 cannot be moved to the target position), and the target position and the actual position in the Z direction are different, and a Z deviation occurs. The processing unit 130 calculates the Z deviation, which is the difference between the target position in the Z direction of the fine movement stage 8, the substrate chuck 3, or the pin member 9, and the actual position in the Z direction measured by a sensor not shown. The Z deviation is shown, for example, by waveform 17 in Fig. 12. Note that waveform 18 shows the reference Z deviation. Reference waveform 18 is a reference waveform that shows the Z deviation when fine movement stage 8 is moved without holding substrate 2.

[0094] In this embodiment, the absolute value of the Z deviation when the acquired Z deviation is the maximum or minimum value is set as the Z deviation representative value. Also, the representative value of the Z deviation that is the reference when the fine movement stage 8 is moved without the substrate 2 being placed on the substrate chuck 3 is set as the Z deviation reference value. The maximum or minimum value of the Z deviation is the maximum or minimum value of the Z deviation representative values ​​from when the substrate 2 and the pin member 9 come into contact with each other to when the entire surface of the substrate 2 and the substrate chuck 3 are separated. The processing unit 130 obtains the absolute value of the Z deviation when the Z deviation is the maximum or minimum among the waveforms of the acquired Z deviation. This absolute value is set as the Z deviation representative value. The adhesive force is obtained based on the difference between the representative value of the Z deviation and the Z deviation reference value. Based on this adhesive force, the optimal gas supply parameters can be obtained by the simulation described in the first embodiment. Also, since the adhesive force can be obtained based on the Z deviation, the gas supply parameters can be optimized in the exposure apparatus without using a simulator. For example, when the gas supply amount and / or supply time is increased from the state shown by waveform 17 in Fig. 12, the Z deviation approaches waveform 18 in Fig. 12. Just before the Z deviation approaches waveform 18, the adhesion force is at the optimum point shown in Fig. 4(b). The gas supply parameters just before the Z deviation overlaps with waveform 18 are in the optimum state. In this way, the gas supply amount can also be optimized within the exposure apparatus.

[0095] This embodiment may be used in combination with the adhesion estimation result of the first embodiment, as in the second embodiment. In addition, the second embodiment and this embodiment may be used in combination, or both the first and second embodiments may be used in combination with this embodiment.

[0096] <Fourth embodiment> In the first embodiment, the amount of gas supplied is constant (FIG. 4(a)). In the fourth embodiment, an example will be described in which the amount of gas supplied is changed according to the elapsed time from the start of gas supply.

[0097] FIG. 5(a) shows a gas supply pattern in which the amount of gas supply is reduced as time passes from the start of gas supply. The adhesive force acting on the substrate 2 and the chuck pin of the substrate chuck 3 decreases as time passes while gas is being supplied. First, solenoid valve 51, which supplies the largest amount of gas, is turned ON. After a predetermined time has passed, solenoid valve 51 is turned OFF and solenoid valve 52 is turned ON. This changes the supply amount to the second stage. After a further predetermined time has passed, solenoid valve 52 is turned OFF and solenoid valve 53 is turned ON. This changes the supply amount to the third stage. In this way, by reducing the amount of gas supply as time passes, the risk of the substrate 2 slipping can be reduced.

[0098] Fig. 5(b) illustrates an example of a change in adhesive force between the substrate 2 and the substrate chuck 3 while gas is being supplied under the gas supply control shown in Fig. 5(a). The degree of decrease in adhesive force varies among the sections in which the solenoid valve 51 is turned on, the sections in which the solenoid valve 52 is turned on, and the sections in which the solenoid valve 53 is turned on.

[0099] In this manner, in this embodiment, the aim is to bring the adhesive force to the optimum point in Fig. 5(b) while changing the amount of gas supply over time. If the adhesive force becomes negative, the substrate 2 will slide sideways on the substrate chuck 3.

[0100] By supplying gas in this manner and weakening the adhesive force to the optimum point, it is possible to create a state in which the substrate 2 does not slip sideways on the substrate chuck 3 and the substrate chuck 3 is not worn out. The reason why the optimum point is not set to a point where the adhesive force is 0 is because a small amount of adhesive force is left to prevent the substrate 2 from slipping sideways.

[0101] On the other hand, the gas supply flow rate can be gradually increased over time. In addition, since the gas flow path 10 is in a reduced pressure state at the beginning of the gas supply, the supplied gas is instantly gushed out forcefully onto the substrate 2. For example, when gas is supplied to a thin substrate, if the gas supply flow rate is increased while the adhesive force is strong, excessive force is instantaneously applied to the substrate, which may cause the substrate to be damaged or warped. In order to reduce such risks, it is effective to control the gas supply flow rate to be gradually increased.

[0102] As in the first embodiment, by determining in advance the adhesive forces estimated from the substrate 2 and the substrate chuck 3 and the combination of optimal gas supply parameters corresponding to the adhesive forces, it is possible to realize gas supply according to the respective characteristics. Note that the optimal parameters may be determined using the adhesive forces determined by the methods described in the second and third embodiments, or may be determined using the adhesive forces determined by combining the first, second, and third embodiments.

[0103] <Fifth embodiment> The configuration of the substrate stage 1 of the fifth embodiment will be described with reference to Fig. 6. The substrate stage 1 of the fifth embodiment has two systems of gas flow paths in comparison with the substrate stage 1 of the first embodiment (Fig. 1). Specifically, in addition to the gas flow path 10 in the second embodiment, a gas flow path 11 is arranged. Like the gas flow path 10, the gas flow path 11 is arranged so that gas is sucked from the vacuum pump 5 through an opening formed on the surface of the substrate chuck 3 facing the substrate 2, and so that gas is supplied from the positive pressure tank 6 through the opening. The pressure inside the gas flow path 11 is measured by a pressure sensor 21.

[0104] A regulator 42 is disposed on the gas flow path 11 between the vacuum pump 5 and the substrate chuck 3. The regulator 42 is configured to adjust the pressure in the gas flow path 11 to a desired vacuum pressure. In addition, a solenoid valve 32 is disposed on the gas flow path 11, closer to the substrate chuck 3 than the regulator 4. When the solenoid valve 32 is turned ON, the vacuum pump 5 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the solenoid valve 32 is turned OFF, the pressure adjustment in the space between the substrate 2 and the substrate chuck 3 is no longer performed.

[0105] Regulators 64, 65, 66 and solenoid valves 54, 55, 56 are arranged on the gas flow path 11 between the positive pressure tank 6 and the substrate chuck 3. The regulators 64, 65, 66 are configured to adjust the supply pressure from the positive pressure tank 6 in the gas flow path 11. The solenoid valves 54, 55, 56 are arranged on the gas flow path 11 on the substrate chuck 3 side with respect to the regulators 64, 65, 66. When the solenoid valves 54, 55, 56 are turned ON, the positive pressure tank 6 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the solenoid valves 54, 55, 56 are turned OFF, the pressure in the space between the substrate 2 and the substrate chuck 3 is no longer adjusted. In FIG. 6, three sets of regulators and solenoid valves are arranged on the gas flow path 11, but the number of sets is not limited to a specific number. One set or four or more sets may be used. Also, instead of the combination of the solenoid valve and the regulator, a servo valve whose opening and closing degree can be freely set may be configured.

[0106] When the substrate 2 is held by the substrate chuck 3 through vacuum suction, the solenoid valves 31 and 32 are turned ON, and the solenoid valves 51, 52, 53, 54, 55 and 56 are turned OFF. This allows the pressure in the space between the substrate 2 and the substrate chuck 3 to be reduced by the vacuum pump 5. Since it is only necessary to reduce the pressure in the space between the substrate 2 and the substrate chuck 3, it is possible to turn either the solenoid valve 31 or the solenoid valve 32 ON.

[0107] When the substrate 2 is released from the substrate chuck 3, the solenoid valves 31 and 32 are turned OFF, at least one of the solenoid valves 51, 52, and 53 is turned ON, and at least one of the solenoid valves 54, 55, and 56 is turned ON. This allows the pressure in the space between the substrate 2 and the substrate chuck 3 to be increased by gas from the positive pressure tank 6.

[0108] As in the first embodiment, by changing the settings of the regulators 61, 62, 63, 64, 65, and 66, it is possible to change which of the solenoid valves 51, 52, and 53 is turned on, and also to change which of the solenoid valves 54, 55, and 56 is turned on. This makes it possible to change the flow rate and pressure of the gas filling the space between the substrate 2 and the substrate chuck 3.

[0109] Fig. 7 is a plan view of the substrate chuck 3 in this embodiment as viewed from the +Z direction. An annular seal portion 60 is provided at a position along the outer periphery of the substrate chuck 3. However, the presence or absence, number, and arrangement of the seal portion 60 are not limited to the example shown in Fig. 7. For example, the substrate chuck 3 may not be provided with a seal portion. Alternatively, a plurality of seal portions may be provided.

[0110] The surface of the substrate chuck 3 is provided with a plurality of protrusions (not shown), and the upper surfaces of the plurality of protrusions can be a holding surface for holding the substrate 2. The plurality of protrusions are called chuck pins. The substrate chuck 3 has an opening 7 connected to the gas flow path 10. The substrate chuck 3 also has an opening 80 connected to the gas flow path 11. Although six openings 7 and six openings 80 are shown in FIG. 7, their arrangement and number are not limited to the example shown in FIG. 7. In this manner, a plurality of openings can be formed on the surface of the substrate chuck 3 facing the substrate 2. The control unit 100 can independently control the amount of gas supplied from a first opening among the plurality of openings and the amount of gas supplied from a second opening among the plurality of openings. Alternatively, the plurality of openings may include an opening used for supplying gas and an opening not used for supplying gas.

[0111] The provision of two gas flow paths is advantageous in that the gas supply amount can be set more precisely than in the first embodiment. In addition, the balance between the gas supply amount from gas flow path 10 and the gas supply amount from gas flow path 11 can be changed depending on the wear state of the chuck. By changing the balance of the gas supply amount, the adhesive force between substrate 2 and substrate chuck 3 after gas supply changes, and local wear of substrate chuck 3 can be prevented.

[0112] Next, a gas supply method will be described. In the first embodiment, the gas supply flow rate is controlled by turning on any one of the solenoid valves 51, 52, and 53, and the gas supply time is controlled by the time it takes for the solenoid valve to be turned from ON to OFF. In this embodiment, gas can be supplied by turning on at least one of the solenoid valves 51, 52, 53, 54, 55, and 56. By dividing the system, the flow rate of the gas supplied to the space between the substrate 2 and the substrate chuck 3 can be set more precisely.

[0113] Furthermore, the number of positive pressure tanks 6 is not limited to one. For example, separate positive pressure tanks may be configured for the gas flow paths 10 and 11. In this case, the amount of gas supplied can be increased, so that optimal gas can be supplied even to a substrate with high adhesive force.

[0114] The supply flow rate and supply time of the gas supplied from gas flow passage 10 to the space between substrate 2 and substrate chuck 3 and the supply flow rate and supply time of the gas supplied from gas flow passage 11 to the space between substrate 2 and substrate chuck 3 may be set separately.

[0115] Sixth Embodiment In the sixth embodiment, an example in which a plurality of openings for supplying gas are provided in contrast to the fifth embodiment will be described. In the sixth embodiment, the supply of gas is changed over time. In the sixth embodiment, gas can be supplied by turning on at least one of the solenoid valves 51, 52, 53, 54, 55, and 56. Then, the solenoid valve to be turned on is switched over over time. This allows the supply flow rate of gas supplied to the space between the substrate 2 and the substrate chuck 3 to be set in detail.

[0116] Various embodiments have been described above. In any of the embodiments, the relationship between the original 203 and the original chuck configured on the original stage 204 is similar to the relationship between the substrate 2 and the substrate chuck 3. Therefore, any of the first to sixth embodiments can be applied to control the gas supply when releasing the original 203 from the original chuck.

[0117] Seventh embodiment In the above embodiment, it has been described that the gas supply is controlled based on information (information on ease of separation) on the adhesive force of the substrate to the holding surface obtained in advance. It is also possible to control the gas supply without based on information (information on ease of separation) on the adhesive force of the substrate. As described above, the exposure processing job is input in units of lots, and it is assumed that the characteristics of the substrate differ from lot to lot. Therefore, the control unit 100 may set the control content of the gas supply through the gas flow path 10 when the substrate chuck 3 releases the substrate 2 from the holding of the substrate chuck 3 for each lot. Alternatively, instead of setting the control content for each lot, the control unit 100 may set the control content of the gas supply through the gas flow path 10 when the substrate chuck 3 releases the substrate 2 from the holding of the substrate chuck 3 for each substrate.

[0118] <Embodiment of the article manufacturing method> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. Fig. 16 is a flowchart of the article manufacturing method according to the present embodiment. First, a forming step (S210) is performed to form a pattern on the substrate 2. Next, an acquisition step (S220) is performed to acquire information regarding the adhesive force between the substrate 2 and the substrate chuck 3. Next, a supply step (S230) is performed to supply gas between the substrate 2 and the substrate chuck 3 based on the information regarding the adhesive force acquired in the acquisition step. Next, after the supply of gas is started in the supply step, a separation step (S240) is performed to separate the substrate 2 from the substrate chuck 3. Then, a processing step (S250) is performed to process the substrate 2 separated in the separation step. The processing steps may include other well-known steps (oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.) The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

[0119] The disclosure of the present specification includes at least the following techniques. (Item 1) A holder for holding the substrate; a gas supply unit that supplies a gas between the substrate and the holder, the gas supply unit supplies the gas based on information regarding an adhesive force between the substrate and the holder when the substrate is released from the holder that holds the substrate. A substrate holding device comprising: (Item 2) 2. The substrate holding device according to item 1, wherein the information regarding the adhesive force includes at least one of a characteristic of the substrate and a characteristic of the holding part. (Item 3) 3. The substrate holding device according to item 2, wherein the characteristics of the substrate include at least one of an amount of warping of the substrate, a roughness of the surface of the substrate in contact with the holding portion, a type of film formed on the substrate, a material of the substrate, and a thickness of the substrate. (Item 4) 4. The substrate holding device according to item 2 or 3, wherein the characteristics of the holding part include at least one of the flatness of a holding surface that holds the substrate, the surface roughness of the holding surface, the thickness of a plurality of protrusions provided on the holding part, and the material of the holding part. (Item 5) The gas supply unit includes a pipe for flowing the gas, 5. The substrate holding device according to any one of items 1 to 4, wherein the piping is also used to reduce pressure in a space between the substrate and the holding part in order for the holding part to hold the substrate. (Item 6) A control unit that controls the supply of the gas by the gas supply unit, 6. The substrate holding device according to any one of items 1 to 5, wherein the control unit controls at least one of the amount of gas supplied and the time period for which the gas is supplied. (Item 7) 7. The substrate holding device according to item 6, wherein the control unit controls the amount of the gas supplied to be changed according to the elapsed time from the start of the supply of the gas. (Item 8) a plurality of openings for supplying the gas are formed on a surface of the holding part facing the substrate, The control unit separately controls an amount of gas supplied from a first opening among the plurality of openings and an amount of gas supplied from a second opening among the plurality of openings. 7. The substrate holding device according to item 6, (Item 9) 9. The substrate holding device according to item 8, wherein the plurality of openings include openings used for supplying gas and openings not used for supplying gas. (Item 10) a drive mechanism that drives the holder in a first direction perpendicular to a holding surface of the holder that holds the substrate; a measurement unit that measures a position of the holding unit in the first direction, the information about the adhesive force is obtained based on a difference between a target position of the holding part in the first direction and a position of the holding part in the first direction measured by the measurement part. 10. The substrate holding device according to any one of items 1 to 9, wherein: (Item 11) The gas supply unit includes a pipe for flowing the gas, A pressure sensor for measuring the pressure inside the pipe, The information about the adhesion force is obtained based on the pressure measured by the pressure sensor. 11. The substrate holding device according to any one of items 1 to 10, wherein: (Item 12) A control unit that controls the supply of the gas by the gas supply unit, The control unit sets the control content of the gas supply for each lot. 12. The substrate holding device according to any one of items 1 to 11, characterized in that: (Item 13) A holder for holding the substrate; a control unit that controls the supply of gas between the substrate and the holding unit, the control unit controls the supply of the gas based on information about an adhesive force between the substrate and the holder when the substrate is released from the holder that holds the substrate. The substrate processing apparatus according to claim 1, (Item 14) Item 14. The substrate processing apparatus according to item 13, wherein the control unit controls the supply amount and supply time of the gas. (Item 15) Item 15. The substrate processing apparatus according to item 14, wherein the control unit controls the supply amount of the gas to be changed according to the elapsed time from the start of the supply of the gas. (Item 16) 16. The substrate processing apparatus according to any one of items 13 to 15, wherein the substrate processing apparatus is a lithography apparatus that forms a pattern on a substrate. (Item 17) A method for separating a substrate from a holder holding the substrate, comprising the steps of: acquiring information regarding an adhesive force between the substrate and the holder; a supply step of supplying a gas between the substrate and the holder based on the information regarding the adhesive force acquired in the acquisition step; a separation step of separating the substrate from the holder after the supply of the gas is started in the supply step; A method for separating a material comprising the steps of: (Item 18) 18. The separation method according to item 17, wherein the information regarding the adhesion force includes at least one of a characteristic of the substrate and a characteristic of the holder. (Item 19) a forming step of forming a pattern on the substrate held by the holding part; acquiring information regarding an adhesive force between the substrate and the holder; a supplying step of supplying a gas between the substrate on which the pattern is formed in the forming step and the holding unit based on information regarding the adhesive force obtained in the obtaining step; a separation step of separating the substrate from the holder after the supply of the gas is started in the supply step; a processing step of processing the substrate separated in the separating step; A method for manufacturing an article, comprising: (Item 20) A substrate processing apparatus for processing a substrate, a holding part having a holding surface for holding the substrate; a gas flow path arranged so that gas from a gas supply source is supplied between the substrate and the holder through an opening formed in a surface of the holder facing the substrate; a control unit that controls the supply of gas through the gas flow path and the opening based on information on the ease of separation of the substrate from the holding surface when the holding unit releases the substrate; A substrate processing apparatus comprising:

[0120] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0121] 1: substrate stage, 2: substrate, 3: substrate chuck, 5: vacuum pump, 6: positive pressure tank, 8: fine movement stage, 10: gas flow path, 13: coarse movement stage, 100: control unit

Claims

1. A holder for holding the substrate; a gas supply unit that supplies a gas between the substrate and the holder, the gas supply unit supplies the gas based on information regarding an adhesive force between the substrate and the holder when the substrate is released from the holder that holds the substrate. A substrate holding device comprising:

2. The substrate holding device according to claim 1 , wherein the information regarding the adhesive force includes at least one of a characteristic of the substrate and a characteristic of the holder.

3. 3. The substrate holding device according to claim 2, wherein the characteristics of the substrate include at least one of an amount of warping of the substrate, a roughness of the surface of the substrate in contact with the holding portion, a type of film formed on the substrate, a material of the substrate, and a thickness of the substrate.

4. The substrate holding device according to claim 2, characterized in that the characteristics of the holding portion include at least one of the flatness of the holding surface that holds the substrate, the surface roughness of the holding surface, the thickness of a plurality of convex portions provided on the holding portion, and the material of the holding portion.

5. The gas supply unit includes a pipe for flowing the gas, 2. The substrate holding device according to claim 1, wherein the piping is also used for reducing the pressure of a space between the substrate and the holding part in order for the holding part to hold the substrate.

6. A control unit that controls the supply of the gas by the gas supply unit, 2. The substrate holding device according to claim 1, wherein the control unit controls at least one of the amount of gas supplied and the time period during which the gas is supplied.

7. 7. The substrate holding device according to claim 6, wherein the control unit controls the amount of the gas supplied to be changed in accordance with the elapsed time from the start of the supply of the gas.

8. a plurality of openings for supplying the gas are formed on a surface of the holding part facing the substrate, The control unit separately controls an amount of gas supplied from a first opening among the plurality of openings and an amount of gas supplied from a second opening among the plurality of openings.

7. The substrate holding device according to claim 6.

9. 9. The substrate holding device according to claim 8, wherein the plurality of openings include an opening used for supplying a gas and an opening not used for supplying a gas.

10. a drive mechanism that drives the holder in a first direction perpendicular to a holding surface of the holder that holds the substrate; a measurement unit that measures a position of the holding unit in the first direction, the information about the adhesive force is obtained based on a difference between a target position of the holding part in the first direction and a position of the holding part in the first direction measured by the measurement part; 2. The substrate holding device according to claim 1.

11. The gas supply unit includes a pipe for flowing the gas, A pressure sensor for measuring the pressure inside the pipe, The information about the adhesion force is obtained based on the pressure measured by the pressure sensor.

2. The substrate holding device according to claim 1.

12. A control unit that controls the supply of the gas by the gas supply unit, The control unit sets the control content of the gas supply for each lot.

2. The substrate holding device according to claim 1.

13. A holder for holding the substrate; a control unit that controls the supply of gas between the substrate and the holding unit, the control unit controls the supply of the gas based on information about an adhesive force between the substrate and the holder when the substrate is released from the holder that holds the substrate. The substrate processing apparatus according to claim 1,

14. The substrate processing apparatus according to claim 13 , wherein the control unit controls a supply amount and a supply time of the gas.

15. The substrate processing apparatus according to claim 14 , wherein the control unit performs control so as to change the amount of the gas supplied in accordance with the elapsed time from the start of the supply of the gas.

16. The substrate processing apparatus according to claim 13 , wherein the substrate processing apparatus is a lithography apparatus that forms a pattern on a substrate.

17. A method for separating a substrate from a holder holding the substrate, comprising the steps of: acquiring information regarding an adhesive force between the substrate and the holder; a supply step of supplying a gas between the substrate and the holder based on the information regarding the adhesive force acquired in the acquisition step; a separation step of separating the substrate from the holder after the supply of the gas is started in the supply step; A method for separating a material comprising the steps of:

18. 20. The method of claim 17, wherein the information about the adhesion force includes at least one of a characteristic of the substrate and a characteristic of the holder.

19. a forming step of forming a pattern on the substrate held by the holding part; acquiring information regarding an adhesive force between the substrate and the holder; a supplying step of supplying a gas between the substrate on which the pattern is formed in the forming step and the holding unit based on information regarding the adhesive force obtained in the obtaining step; a separation step of separating the substrate from the holder after the supply of the gas is started in the supply step; a processing step of processing the substrate separated in the separating step; a manufacturing step of manufacturing an article using the substrate processed in the processing step; A method for manufacturing an article, comprising:

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