Manufacturing method for light-emitting device and light-emitting device

Abstract

To provide a manufacturing method for a light-emitting device with high reliability, and the light-emitting device.SOLUTION: A manufacturing method for a light-emitting device in an embodiment of the present disclosure includes steps of: preparing a substrate having a base material and a pair of wiring parts disposed on an upper surface side of the base material; disposing a light-emitting element including a semiconductor structure and a pair of electrodes disposed on a lower surface of the semiconductor structure over the substrate so that the pair of electrodes face the pair of wiring parts; electrically connecting the pair of wiring parts and the pair of electrodes and forming a conductive member containing copper so as to have a main body part overlapping with the wiring part and a projection part projecting outward from the wiring part with a space from the base material in a top view; and forming a protection film at least in the space using an atomic layer deposition method with the space enlarged by heating the conductive member at a temperature of 150°C or more and 250°C or less.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a method for manufacturing a light emitting device and a light emitting device. [Background technology]

[0002] 2. Description of the Related Art Light emitting devices in which a light emitting element is mounted on a wiring board are known. For example, Patent Document 1 discloses a method for manufacturing electrodes for connecting a semiconductor chip to the outside. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 4-217323 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a highly reliable light emitting device and a manufacturing method thereof. [Means for solving the problem]

[0005] A method for manufacturing a light emitting device according to an embodiment of the present disclosure includes the steps of: preparing a substrate having a base material and a pair of wiring portions disposed on an upper surface of the base material; disposing a light emitting element having a semiconductor structure and a pair of electrodes disposed on a lower surface of the semiconductor structure above the substrate such that the pair of electrodes and the pair of wiring portions face each other; forming a conductive member that electrically connects the pair of wiring portions and the pair of electrodes and contains copper, so that the conductive member has a main body portion that overlaps with the wiring portions in a top view and a protrusion portion that protrudes outward from the wiring portions with a gap generated between the main body portion and the base material; and heating the conductive member at a temperature of 150° C. or more and 250° C. or less to widen the gap, and forming a protective film in at least the gap by atomic layer deposition.

[0006] A light emitting device according to one embodiment of the present disclosure includes a substrate having a base material and a pair of wiring portions arranged on an upper surface side of the base material, a light emitting element having a semiconductor structure and a pair of electrodes arranged on a lower surface of the semiconductor structure, a conductive member that electrically connects the pair of wiring portions and the pair of electrodes and contains copper, and has a main body portion that overlaps the wiring portions in a top view and a protrusion portion that protrudes outward from the wiring portions with a gap generated between the conductive member and the base material, and a protective film that covers at least the gap and has a first insulating film and a second insulating film having different linear expansion coefficients. Effect of the Invention

[0007] According to an embodiment of the present disclosure, a highly reliable light emitting device manufacturing method and a highly reliable light emitting device can be provided. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic perspective view illustrating an example of a light emitting device according to an embodiment. [Diagram 2] 2 is a schematic cross-sectional view of the light emitting device according to the embodiment taken along line II-II in FIG. [Diagram 3] 3 is a partially enlarged cross-sectional view that illustrates a schematic cross-sectional portion of a region III shown in FIG. 2 in the light-emitting device according to the embodiment. [Figure 4] 5A to 5C are schematic cross-sectional views for explaining an example of a method for manufacturing the light emitting device according to the embodiment. [Diagram 5] 5A to 5C are schematic cross-sectional views for explaining an example of a method for manufacturing the light emitting device according to the embodiment. [Figure 6] 5A to 5C are schematic cross-sectional views for explaining an example of a method for manufacturing the light emitting device according to the embodiment. [Figure 7] 5A to 5C are schematic cross-sectional views for explaining an example of a method for manufacturing the light emitting device according to the embodiment. [Figure 8] 5A to 5C are schematic cross-sectional views for explaining an example of a method for manufacturing the light emitting device according to the embodiment. [Figure 9]5A to 5C are schematic cross-sectional views for explaining an example of a method for manufacturing the light emitting device according to the embodiment. [Figure 10] 5A to 5C are schematic cross-sectional views for explaining an example of a method for manufacturing the light emitting device according to the embodiment. [Figure 11] 5A to 5C are schematic cross-sectional views for explaining an example of a method for manufacturing the light emitting device according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the manufacturing method of the light-emitting device and the light-emitting device according to the embodiment of the present disclosure will be described in detail with reference to the drawings. However, the following embodiments are merely illustrative of the manufacturing method of the light-emitting device and the light-emitting device for embodying the technical ideas of the embodiments, and are not limited to the following. Furthermore, the dimensions, materials, shapes, and relative arrangements of the components described in the embodiments are merely illustrative examples, and are not intended to limit the scope of the present disclosure, unless otherwise specified. Note that the size, positional relationship, etc. of the components shown in each drawing may be exaggerated to clarify the explanation. In the following explanation, the same names and symbols indicate the same or homogeneous components, and detailed explanations will be omitted as appropriate. An end view showing only a cut surface may be used as a cross-sectional view.

[0010] In the figures shown below, directions may be indicated by the X-axis, Y-axis, and Z-axis. The X-axis, Y-axis, and Z-axis are mutually orthogonal directions. The direction in which the arrow points in the X-axis direction is indicated as the +X direction, and the opposite direction of the +X direction is indicated as the -X direction. The direction in which the arrow points in the Y-axis direction is indicated as the +Y direction, and the opposite direction of the +Y direction is indicated as the -Y direction. The direction in which the arrow points in the Z-axis direction is indicated as the +Z direction, and the opposite direction of the +Z direction is indicated as the -Z direction. In addition, the term "top view" in the embodiments refers to viewing the object from the +Z direction. However, these do not limit the orientation of the light-emitting device when in use, and the orientation of the light-emitting device is arbitrary. In addition, in the embodiments, the surface of the object when viewed from the +Z direction is referred to as the "top surface," and the surface of the object when viewed from the -Z direction is referred to as the "bottom surface." In the embodiments shown below, "along the X-axis, Y-axis, and Z-axis" includes the object having an inclination within a range of ±10° with respect to these axes. In addition, in the embodiment, the orthogonal angle may have an error of within ±10° with respect to 90°.

[0011] Additionally, in this disclosure, unless otherwise specified, polygons such as rectangles are referred to as polygons, including shapes in which the corners of the polygon have been processed, such as by rounding, chamfering, removing the corners, or rounding off. Shapes in which processing has been applied not only to the corners (edges of the sides) but also to the middle parts of the sides are also referred to as polygons. In other words, shapes in which partial processing has been applied while leaving the polygon as the base are included in the interpretation of "polygon" described in this disclosure.

[0012] The same applies not only to polygons, but also to terms expressing specific shapes such as trapezoids, circles, and irregular shapes. The same also applies to terms relating to the sides that form the shapes. In other words, even if the corners or middle part of a side are processed, the interpretation of "side" includes the processed parts.

[0013] [Embodiment] <Overall Configuration of Light-Emitting Device 1> As a premise for explaining a manufacturing method of the light emitting device 1 according to the embodiment, an example of the configuration of the light emitting device 1 will be described with reference to Fig. 1 to Fig. 3. Fig. 1 is a schematic perspective view of the light emitting device 1 according to the embodiment. Fig. 2 is a schematic cross-sectional view of the light emitting device 1 according to the embodiment taken along line II-II shown in Fig. 1. Fig. 3 is a partially enlarged cross-sectional view showing a schematic cross-sectional portion of region III shown in Fig. 2 in the light emitting device 1 according to the embodiment.

[0014] The light emitting device 1 includes a substrate 10, a light emitting element 20, conductive members 30a and 30b, and a protective film 40. The light emitting device 1 may further include a package substrate 50, wire interconnections 60, metal layers 70a and 70b, a light shielding member 80, a wavelength conversion member 90, and a covering member 95. In Fig. 2, three light emitting elements 20 arranged along the X direction are shown. However, the number of light emitting elements 20 included in the light emitting device 1 is not limited to three.

[0015] 2, the lower surface of the substrate 10 is joined to the upper surface of the package substrate 50 via, for example, a joining member 51. The first terminal 15 provided on the upper surface of the substrate 10 is electrically connected to the second terminal 52 provided on the upper surface of the package substrate 50 via a wire wiring 60. The second terminal 52 of the package substrate 50 is electrically connected to an external power supply. That is, the first terminal 15 provided on the upper surface of the substrate 10 is electrically connected to the external power supply via the second terminal 52 of the package substrate 50 and the wire wiring 60. The wire wiring 60 is covered with a covering member 95.

[0016] <Substrate 10> The substrate 10 has a substantially rectangular outer shape when viewed from above. However, the substrate 10 may have other outer shapes, such as a substantially circular shape, a substantially elliptical shape, or a substantially polygonal shape, when viewed from above. The substrate 10 may include an integrated circuit for controlling the light emitting operation of the light emitting element 20. An example of the integrated circuit is an electronic circuit such as an ASIC (Application Specific Integrated Circuit).

[0017] 3, the substrate 10 includes a base material 11 and a pair of wiring portions 12a and 12b. The substrate 10 further includes a first terminal 15 (see FIG. 2). The pair of wiring portions 12a and 12b are electrically connected to the first terminal 15 via, for example, an internal wiring provided inside the base material 11.

[0018] The base material 11 is the base material of the substrate 10. As shown in FIG. 3, the base material 11 has an upper surface 11a, a lower surface 11b, and a side surface 11c connecting the outer edges of the upper surface 11a and the lower surface 11b. The base material 11 is mainly made of an insulating or semiconducting material. Examples of materials that make up the base material 11 include a semiconductor substrate such as silicon, a ceramic substrate such as aluminum nitride, and a resin substrate such as glass epoxy. However, the material that makes up the base material 11 is not limited to these.

[0019] Each of the wiring portions 12a and 12b has a substantially rectangular outer shape when viewed from above. However, each of the wiring portions 12a and 12b may have another outer shape, such as a substantially circular shape, a substantially elliptical shape, or a substantially polygonal shape, when viewed from above.

[0020] Each of the wiring parts 12a and 12b includes, for example, copper. However, the material constituting each of the wiring parts 12a and 12b is not limited to copper. Other examples of the material constituting each of the wiring parts 12a and 12b include gold, silver, aluminum, nickel, rhodium, titanium, platinum, palladium, molybdenum, chromium, and tungsten.

[0021] The wiring portion 12a is disposed on the upper surface 11a side of the substrate 11. The wiring portion 12a shown in Fig. 3 is disposed on the upper surface 11a of the substrate 11. However, the wiring portion 12a may be disposed in the substrate 11 with the upper surface of the wiring portion 12a exposed from the upper surface 11a of the substrate 11. The wiring portion 12a may be bonded to the substrate 11 via a bonding layer made of, for example, a metal or an alloy.

[0022] The wiring portion 12b is disposed on the upper surface 11a side of the substrate 11 and at a position spaced apart from the wiring portion 12a. The wiring portion 12b shown in Fig. 3 is disposed on the upper surface 11a of the substrate 11. However, the wiring portion 12b may be disposed in the substrate 11 with the upper surface of the wiring portion 12b exposed from the upper surface 11a of the substrate 11. The wiring portion 12b may be bonded to the substrate 11 via a bonding layer made of, for example, a metal or an alloy.

[0023] <Light emitting element 20> The light emitting element 20 is a semiconductor light emitting element such as an LED (Light Emitting Diode) or an LD (Laser Diode). As shown in Fig. 3, the light emitting element 20 has a semiconductor structure 21 and a pair of electrodes 22a, 22b. The light emitting element 20 may also have a side covering layer 25 that covers the side surface of the semiconductor structure 21 and an upper surface covering layer 26 that covers the upper surface of the semiconductor structure 21.

[0024] The semiconductor structure 21 emits, for example, blue light. The semiconductor structure 21 includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, which are stacked in this order in the Z direction. Each of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer in the semiconductor structure 21 is made of, for example, In X Al Y Ga 1-X-Y The semiconductor structure 21 is made of a nitride-based semiconductor such as N (0≦X, 0≦Y, X+Y≦1). The upper surface (the surface on the +Z direction side) of the semiconductor structure 21 corresponds to the light extraction surface.

[0025] The semiconductor structure 21 has a substantially rectangular outer shape when viewed from above. However, the semiconductor structure 21 may have other outer shapes, such as a substantially circular, substantially elliptical, or substantially polygonal, when viewed from above. The semiconductor structure 21 shown in FIG. 3 has a trapezoidal cross-sectional shape. However, the cross-sectional shape of the semiconductor structure 21 is not limited to a trapezoidal shape.

[0026] Each of the electrodes 22a, 22b is disposed on the lower surface of the semiconductor structure 21. Each of the electrodes 22a, 22b is a positive electrode and a negative electrode disposed at positions spaced apart from each other on the lower surface of the semiconductor structure 21. Each of the electrodes 22a, 22b includes a metal such as gold.

[0027] Each of the electrodes 22a and 22b has a substantially rectangular outer shape when viewed from above. However, each of the electrodes 22a and 22b may have other outer shapes, such as a substantially circular, substantially elliptical, or substantially polygonal, when viewed from above. The electrode 22a and the wiring portion 12a face each other with the conductive member 30a therebetween. The electrode 22b and the wiring portion 12b face each other with the conductive member 30b therebetween.

[0028] The side covering layer 25 is an insulating layer that protects the side surface of the semiconductor structure 21. The top covering layer 26 is an insulating layer that protects the top surface of the semiconductor structure 21. The side covering layer 25 and the top covering layer 26 may be disposed on the semiconductor structure 21 in separate processes, for example. The side covering layer 25 and the top covering layer 26 are preferably made of the same kind of material. Examples of materials that make up the side covering layer 25 and the top covering layer 26 include silicon oxide, aluminum oxide, silicon nitride, tantalum oxide, and niobium oxide. However, the configurations of the side covering layer 25 and the top covering layer 26 are not limited thereto.

[0029] In top view, the top surface covering layer 26 overlaps with the top surface corresponding to the light extraction surface of the semiconductor structure 21. The thickness of the top surface covering layer 26 is preferably smaller than the thickness of the side surface covering layer 25. This can reduce the effect of the top surface covering layer 26 on the light extraction efficiency of the semiconductor structure 21. However, the thickness of the side surface covering layer 25 and the thickness of the top surface covering layer 26 may be approximately the same.

[0030] <Conductive members 30a, 30b> 3, each of the pair of conductive members 30a, 30b is disposed between the substrate 10 and the light-emitting element 20. The conductive member 30a electrically connects the wiring portion 12a of the substrate 10 and the electrode 22a of the light-emitting element 20. The conductive member 30b is disposed at a position spaced apart from the conductive member 30a, and electrically connects the wiring portion 12b of the substrate 10 and the electrode 22b of the light-emitting element 20.

[0031] Each of the conductive members 30a, 30b contains copper. By including each of the conductive members 30a, 30b with copper, which has excellent electrical and thermal conductivity, the electrical resistance of the conductive members 30a, 30b can be reduced and the heat dissipation performance of the heat generated in the light emitting element 20 can be improved.

[0032] In a cross section passing through the semiconductor structure 21 and the pair of electrodes 22a, 22b, the center C11 in the width direction of the conductive member 30a is preferably located outside (-X direction side) of the center C21 in the width direction of the electrode 22a. In contrast, the center C12 in the width direction of the conductive member 30b is preferably located outside (+X direction side) of the center C22 in the width direction of the electrode 22b. This allows the distance between the conductive member 30a and the conductive member 30b to be increased. As a result, it is possible to reduce the situation in which the conductive member 30a and the conductive member 30b come into contact with each other and are short-circuited. Here, the "outside" refers to the side farther from a virtual line that passes through the center of the light-emitting element 20 and extends in the Z direction in a cross-sectional view. In addition, the "center" refers to the geometric center of gravity in the cross-sectional shape of the object.

[0033] As shown in FIG. 3, the conductive member 30a has a main body 31a and a protruding portion 32a. The main body 31a overlaps the wiring portion 12a in a top view. The main body 31a is disposed between the upper surface of the wiring portion 12a and the lower surface of the electrode 22a. The protruding portion 32a protrudes outward from the wiring portion 12a in a top view. The protruding portion 32a is not joined to the upper surface 11a of the substrate 11. Therefore, a gap S1 is formed between the protruding portion 32a and the upper surface 11a of the substrate 11. The illustrated protruding portion 32a is not in contact with the upper surface 11a of the substrate 11, but a part of the protruding portion 32a may be in contact with the upper surface 11a of the substrate 11. In this case, a gap S1 is formed in a non-contact region between the protruding portion 32a and the upper surface 11a of the substrate 11. A protective film 40 is interposed in the gap S1.

[0034] The conductive member 30b has a main body 31b and a protruding portion 32b. The main body 31b overlaps with the wiring portion 12b in a top view. The main body 31b is disposed between the upper surface of the wiring portion 12b and the lower surface of the electrode 22b. The protruding portion 32b protrudes outward from the wiring portion 12b in a top view. The protruding portion 32b is not joined to the upper surface 11a of the substrate 11. Therefore, a gap S2 is formed between the protruding portion 32b and the upper surface 11a of the substrate 11. The illustrated protruding portion 32b is not in contact with the upper surface 11a of the substrate 11, but a part of the protruding portion 32b may be in contact with the upper surface 11a of the substrate 11. In this case, a gap S2 is formed in a non-contact region between the protruding portion 32b and the upper surface 11a of the substrate 11. A protective film 40 is interposed in the gap S2 between the protruding portion 32b and the upper surface 11a of the substrate 11.

[0035] In the conductive member 30a, when the main body 31a and the protruding portion 32a are structurally integrally formed, the protruding portion 32a does not actually exist as a separate body from the main body 31a, but the protruding portion 32a can be conceptually defined as shown by the two-dot chain line in Fig. 3 and can be regarded as a conceptual part. The same applies to the main body 31b and the protruding portion 32b in the conductive member 30b.

[0036] <Metal layer 70a, 70b> The metal layer 70a covers the surface of the protrusion 32a. By covering the surface of the protrusion 32a with the metal layer 70a, the conductive member 30a can be protected from corrosive substances such as sulfur floating in the outside (hereinafter referred to as "corrosive substances"). The metal layer 70a may cover regions other than the surface of the protrusion 32a, such as the side surface of the wiring portion 12a and the side surface of the electrode 22a.

[0037] The metal layer 70b covers the surface of the protrusion 32b. By covering the surface of the protrusion 32b with the metal layer 70b, the conductive member 30b can be protected from corrosive substances. The metal layer 70b may cover regions other than the surface of the protrusion 32b, such as the side surface of the wiring portion 12b and the side surface of the electrode 22b.

[0038] Each of the metal layers 70a and 70b may include multiple layers. For example, each of the metal layers 70a and 70b includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer in the metal layer 70a are arranged in this order from the surface of the protruding portion 32a toward the outside. The first layer, the second layer, and the third layer in the metal layer 70b are arranged in this order from the surface of the protruding portion 32b toward the outside. However, the configuration of the metal layers 70a and 70b is not limited to a three-layer structure including the first layer, the second layer, and the third layer.

[0039] An example of the metal constituting the first layer is gold. An example of the metal constituting the second layer is palladium. An example of the metal constituting the third layer is gold. However, the metals constituting the first layer, second layer, and third layer are not limited to these. The first layer containing gold can protect the conductive members 30a and 30b containing copper from corrosive substances, and has good adhesion to the second layer containing palladium and the conductive members 30a and 30b containing copper, and functions as a joining member that joins the second layer and the conductive members 30a and 30b. The second layer containing palladium functions as a diffusion prevention layer that reduces the diffusion of copper from the conductive members 30a and 30b. The third layer containing gold protects the conductive members 30a and 30b containing copper from corrosive substances.

[0040] <Protective film 40> As shown in FIG. 3, the protective film 40 covers at least the gap S1 between the protruding portion 32a and the upper surface 11a of the substrate 11, and covers the gap S2 between the protruding portion 32b and the upper surface 11a of the substrate 11.

[0041] The protective film 40 covering the gaps S1 and S2 preferably extends to the depths of the gaps S1 and S2 while being in close contact with the upper surface 11a of the substrate 11. Here, "the depth of the gap S1" refers to the region between the protruding portion 32a and the upper surface 11a of the substrate 11 that is closest to the conductive member 30a. Moreover, "the depth of the gap S2" refers to the region between the protruding portion 32b and the upper surface 11a of the substrate 11 that is closest to the conductive member 30b.

[0042] Since each of the conductive members 30a and 30b contains copper, which has a relatively high linear expansion coefficient, it may undergo large thermal expansion when exposed to a high-temperature environment such as during the molding process of molding the light-shielding member 80 or during operation of the light-emitting device 1. At this time, the gap S1 expands in response to the thermal expansion of the conductive member 30a, and the gap S2 expands in response to the thermal expansion of the conductive member 30b. If the gaps S1 and S2 expand and a protective film is not sufficiently disposed in the gaps S1 and S2, a corrosive substance that has entered the gaps S1 and S2 from the outside may reach the conductive members 30a and 30b. This may cause a part of the conductive members 30a and 30b to change into copper sulfide or the like, which may reduce the bonding property or heat dissipation property. In contrast, in the light-emitting device 1 of the present disclosure, the protective film 40 extends deep into the gaps S1 and S2, so that the protective film 40 and the base material 11 are maintained in close contact with each other even if the conductive members 30a and 30b thermally expand. That is, even when exposed to a high-temperature environment, gaps caused by thermal expansion of the conductive members 30a, 30b are unlikely to form between the protective film 40 and the base material 11. This reduces the possibility of corrosive substances penetrating into the protective film 40 through the gaps between the protective film 40 and the base material 11 and corroding the conductive members 30a, 30b. As a result, the reliability of the light-emitting device 1 can be further improved.

[0043] 3 includes a first insulating film 41 and a second insulating film 42 having different linear expansion coefficients. The first insulating film 41 and the second insulating film 42 are disposed in this order from the surfaces of the conductive members 30a and 30b toward the outside. The first insulating film 41 covers the gaps S1 and S2. The second insulating film 42 covers the surface of the first insulating film 41 opposite to the gaps S1 and S2.

[0044] Since the linear expansion coefficient of the first insulating film 41 and the linear expansion coefficient of the second insulating film 42 are different from each other, for example, it is possible to reduce the formation of a series of cracks extending across both the first insulating film 41 and the second insulating film 42 due to thermal expansion of the conductive members 30a, 30b exposed to a high-temperature environment. In other words, it is possible to reduce the occurrence of cracks penetrating from the inside to the outside of the protective film 40. As a result, it is possible to further reduce the situation in which corrosive substances penetrate into the inside of the protective film 40 and corrode the conductive members 30a, 30b.

[0045] The linear expansion coefficient of the first insulating film 41 is preferably larger than that of the second insulating film 42. The linear expansion coefficient of the first insulating film 41 is preferably closer to that of copper contained in the conductive member 30a than that of the second insulating film 42. This allows the first insulating film 41, which has a linear expansion coefficient close to that of copper, to be disposed in the protective film 40 at a position closest to the conductive members 30a and 30b. The first insulating film 41 can be deformed in accordance with the thermal expansion of the conductive members 30a and 30b due to its relationship with the linear expansion coefficient of the conductive members 30a and 30b, so that the occurrence of cracks in the first insulating film 41 can be reduced. Furthermore, the first insulating film 41 is interposed between the conductive members 30a and 30b and the second insulating film 42, so that the sudden deformation of the second insulating film 42 due to the thermal expansion of the conductive members 30a and 30b can be alleviated. As a result, the occurrence of cracks in the second insulating film 42 can be reduced.

[0046] An example of the first insulating film 41 and the second insulating film 42 having such a relationship in magnitude between their linear expansion coefficients is a film containing aluminum oxide as the first insulating film 41 and a film containing silicon oxide as the second insulating film 42. When the second insulating film 42 covering the first insulating film 41 contains silicon oxide, which has excellent barrier performance against sulfur-based gases, the gas barrier property of the protective film 40 can be improved.

[0047] The protective film 40 shown in FIG. 3 has one layer each of the first insulating film 41 and the second insulating film 42. However, the protective film 40 may have multiple layers each of the first insulating film 41 and the second insulating film 42. In this case, the first insulating film 41 and the second insulating film 42 are alternately arranged. In addition, the thickness 40T of the protective film 40 is preferably 1.5 to 2.5 times the dimension of the gap S1 along the Z direction. Similarly, the thickness 40T of the protective film 40 is preferably 1.5 to 2.5 times the dimension of the gap S2 along the Z direction. This can further reduce the occurrence of cracks in the protective film 40 due to thermal expansion of the conductive members 30a and 30b.

[0048] The protective film 40 preferably covers the surface of the protrusion 32a. The protective film 40 shown in Fig. 3 covers the surface of the protrusion 32a via a metal layer 70a. The protective film 40 also preferably covers the surface of the protrusion 32b. The protective film 40 shown in Fig. 3 covers the surface of the protrusion 32b via a metal layer 70b. This can further reduce the possibility of corrosive substances penetrating inside the protective film 40 and corroding the conductive members 30a, 30b.

[0049] The protective film 40 preferably integrally covers each of the side covering layer 25 and the top covering layer 26 of the light emitting element 20. By integrally covering the side covering layer 25 and the top covering layer 26 of the light emitting element 20 with the protective film 40, peeling of the side covering layer 25 and the top covering layer 26 can be reduced. In addition, peeling of the boundary between the side covering layer 25 and the top covering layer 26, which has relatively low adhesion to the semiconductor structure 21, can be reduced.

[0050] In the protective film 40, the thickness of the region covering the top surface covering layer 26 is preferably smaller than the thickness of the region covering the side surface covering layer 25. The region of the protective film 40 covering the top surface covering layer 26 overlaps with the top surface corresponding to the light extraction surface of the semiconductor structure 21 in a top view. Therefore, by making the thickness of the region of the protective film 40 covering the top surface covering layer 26 smaller than the thickness of the region of the protective film 40 covering the side surface covering layer 25, the effect of the protective film 40 on the light extraction efficiency of the semiconductor structure 21 can be reduced.

[0051] <Light blocking member 80> The light shielding member 80 covers the side surface of the semiconductor structure 21. The light shielding member 80 shown in FIG. 3 covers the side surface of the semiconductor structure 21 via the protective film 40 and the side surface covering layer 25. The light shielding member 80 is preferably light reflective. When the light shielding member 80 having light reflectivity covers the side surface of the semiconductor structure 21, it becomes possible to emit light emitted from the semiconductor structure 21 in a predetermined direction. For example, the light shielding member 80 is made of a resin material containing a light reflective substance. Examples of the light reflective substance include titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, and silicon oxide. It is preferable to use one of these alone or two or more of these in combination. Examples of the resin material include a resin material mainly composed of a thermosetting resin such as an epoxy resin, an epoxy modified resin, a silicone resin, a silicone modified resin, or a phenolic resin.

[0052] <Wavelength conversion member 90> The wavelength conversion member 90 is disposed above the light emitting element 20. The wavelength conversion member 90 converts the wavelength of light emitted by the semiconductor structure 21 of the light emitting element 20. The wavelength conversion member 90 includes a base material containing a light-transmitting material, and a wavelength conversion material disposed in the base material. Here, "light-transmitting" means that 60% or more of the light emitted by the semiconductor structure 21 is transmitted. Examples of the light-transmitting material include resin materials, ceramics, and glass. In this embodiment, the light-transmitting material constituting the base material includes a resin material. Examples of the resin material include silicone resin, silicone-modified resin, epoxy resin, epoxy-modified resin, and phenol resin. In particular, silicone resin or modified resin thereof, which has excellent light resistance and heat resistance, is preferable. However, the light-transmitting material is not limited to these.

[0053] The wavelength conversion material is yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12 : Ce, hereafter referred to as "YAG phosphor"), lutetium aluminum garnet phosphor (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu) and other oxynitride phosphors, LSN phosphors (e.g., (La,Y)3Si6N 11:Ce), BSESN-based phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphors (e.g., SrLiAl3N4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu), or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu), etc., nitride-based phosphors, KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn where x satisfies 0 < x < 1), or fluoride-based phosphors such as MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2), etc. can be used. The wavelength conversion material of this embodiment includes a YAG (yttrium aluminum garnet)-based phosphor having excellent heat resistance. For example, a part of the blue light emitted from the light emitting element 20 is converted into yellow light by the YAG-based phosphor. Thereby, white light is emitted from the light extraction surface of the semiconductor structure 21.

[0054] <Covering member 95> The covering member 95 includes, for example, a resin containing a light-shielding filler. Examples of the resin include silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, and acrylic resin. Examples of the light-shielding filler include light-absorbing substances such as pigments, carbon black, titanium black, graphite, etc., and light-reflecting substances such as titanium oxide, aluminum oxide, zinc oxide, barium carbonate, barium sulfate, boron nitride, aluminum nitride, and glass filler. The appearance colors of the covering member 95 include white with excellent light reflectivity, black with excellent light absorption, and gray having both light reflectivity and light absorption.

[0055] <Manufacturing method of the light emitting device 1> Next, a method for manufacturing the light emitting device 1 according to the embodiment will be described with reference to Fig. 4 to Fig. 11. The method for manufacturing the light emitting device 1 according to the embodiment includes the steps of preparing a substrate 10, arranging the light emitting element 20 above the substrate 10, forming conductive members 30a and 30b, and depositing a protective film 40.

[0056] The manufacturing method of the light emitting device 1 according to the embodiment may further include the steps of forming a resist layer 20R, removing the resist layer 20R, forming metal layers 70a and 70b, covering the upper and side surfaces of the semiconductor structure 21 with a light shielding member 80, and removing, in a top view, a region 81 of the light shielding member 80 that overlaps with the upper surface covering layer 26 and a region 45 of the protective film 40 that is above and overlaps with the upper surface covering layer 26. Each step will be described in detail below.

[0057] First, a step of preparing the substrate 10 is performed. Specifically, the substrate 10 having the base material 11 and the pair of wiring portions 12a and 12b is prepared.

[0058] 4, a step of forming a resist layer 20R is performed. Specifically, the resist layer 20R is formed on the upper surface 11a of the base material 11. The resist layer 20R covers the region between the wiring portion 12a and the wiring portion 12b on the upper surface 11a of the base material 11. However, the position where the resist layer 20R is formed is not limited thereto.

[0059] An example of a method for forming the resist layer 20R is a photolithography method. However, the method for forming the resist layer 20R is not limited to this. By performing the step of forming the resist layer 20R, a first intermediate 1M is obtained.

[0060] 5, a step of arranging the light emitting element 20 above the substrate 10 is performed. Specifically, the light emitting element 20 is arranged above the substrate 10 such that a pair of electrodes 22a, 22b arranged on the lower surface of the semiconductor structure 21 and a pair of wiring portions 12a, 12b arranged on the upper surface 11a side of the base material 11 face each other. As a result, with the semiconductor structure 21 supported by the resist layer 20R, the electrode 22a faces the wiring portion 12a, and the electrode 22b faces the wiring portion 12b. By performing the step of arranging the light emitting element 20 above the substrate 10, a second intermediate body 2M is obtained.

[0061] When the light emitting element 20 has a side covering layer 25 and an upper surface covering layer 26, the side covering layer 25 is formed on the side surface of the semiconductor structure 21 and the upper surface covering layer 26 is formed on the upper surface of the semiconductor structure 21 at an appropriate timing before or after the light emitting element 20 is placed above the substrate 10. The side covering layer 25 and the upper surface covering layer 26 may be placed on the semiconductor structure 21 in separate steps, for example. For example, after the side covering layer 25 is placed on the side surface of the semiconductor structure 21, a roughening step is performed on the semiconductor layer located on the upper surface of the semiconductor structure 21. By performing the roughening step, a plurality of uneven portions are formed in the semiconductor layer located on the upper surface of the semiconductor structure 21. Thereafter, the upper surface covering layer 26 is placed on the upper surface of the semiconductor structure 21 to protect the plurality of uneven portions. Note that the above steps are only an example, and the roughening step does not necessarily have to be performed. Examples of the method for forming the side covering layer 25 and the upper surface covering layer 26 include dry processes such as a sputtering method, a vacuum deposition method, and an atomic layer deposition method, and wet processes such as an inkjet method, a spin coating method, and a dipping method. However, the method for forming the side covering layer 25 and the upper surface covering layer 26 is not limited to these.

[0062] 6, a process of forming conductive members 30a and 30b is performed. Specifically, the conductive member 30a electrically connecting the wiring portion 12a and the electrode 22a is formed to have a main body 31a overlapping the wiring portion 12a in a top view, and a protruding portion 32a protruding outward from the wiring portion 12a with a gap S1 formed between the main body 31a and the substrate 11. Similarly, the conductive member 30b electrically connecting the wiring portion 12b and the electrode 22b is formed to have a main body 31b overlapping the wiring portion 12b in a top view, and a protruding portion 32b protruding outward from the wiring portion 12b with a gap S2 formed between the main body 31b and the substrate 11.

[0063] An example of a method for forming the conductive members 30a and 30b is electrolytic plating. If the material constituting the wiring portion 12a is a metal, the wiring portion 12a can be used as a seed layer for forming the conductive member 30a. If the material constituting the wiring portion 12b is a metal, the wiring portion 12b can be used as a seed layer for forming the conductive member 30b.

[0064] When forming the conductive members 30a, 30b by electrolytic plating, first, the second intermediate 2M (see FIG. 5) and the copper electrode members are each immersed in an electrolytic plating solution. Next, an external voltage is applied to the second intermediate 2M and the copper electrode members so that the wiring portions 12a, 12b of the second intermediate 2M serve as cathodes and the copper electrode members serve as anodes. As a result, the conductive member 30a connecting the wiring portion 12a and the electrode 22a is formed, and the conductive member 30b connecting the wiring portion 12b and the electrode 22b is formed.

[0065] When the conductive members 30a, 30b are formed by the above method, the plating grows in the Z direction from the wiring portions 12a, 12b side toward the electrodes 22a, 22b. At this time, a part of the plating spreads laterally (X direction or Y direction) beyond the upper surfaces of the wiring portions 12a, 12b and is also disposed on the upper surface 11a of the substrate 11. The part of the plating that spreads outside the wiring portions 12a, 12b corresponds to the protrusions 32a, 32b. Since the substrate 11 is an insulator or a semiconductor, the protrusions 32a, 32b disposed on the upper surface 11a of the substrate 11 have low adhesion strength to the substrate 11, and gaps S1, S2 are formed between the protrusions 32a, 32b and the upper surface 11a of the substrate 11.

[0066] In the step of forming the conductive members 30a and 30b, it is preferable that the center of one of the pair of conductive members 30a and 30b in the width direction is located outside the center of one of the pair of electrodes 22a and 22b in the width direction, and the center of the other of the pair of conductive members 30a and 30b in the width direction is located outside the center of the other of the pair of electrodes 22a and 22b in the width direction in a cross section passing through the semiconductor structure 21 and the pair of electrodes 22a and 22b. This makes it possible to increase the distance between the conductive member 30a and the conductive member 30b. As a result, it is possible to reduce the situation in which the conductive member 30a and the conductive member 30b come into contact with each other and are short-circuited. For example, in a top view, (i) the surface of the wiring portion 12a facing the wiring portion 12b is located outside the surface of the electrode 22a facing the electrode 22b, and (ii) the center of the wiring portion 12a is located outside the center of the electrode 22a. The same applies to the wiring portion 12b and the electrode 22b. In this state, the conductive members 30a, 30b are formed by electrolytic plating, thereby making it possible to form the conductive members 30a, 30b that are sufficiently spaced apart from each other.

[0067] However, the method for forming the conductive members 30a and 30b is not limited to this. By carrying out the step of forming the conductive members 30a and 30b, the third intermediate 3M is obtained.

[0068] Subsequently, as shown in Fig. 7, a step of removing the resist layer 20R is performed. For example, in order to remove the resist layer 20R, the third intermediate 3M (see Fig. 6) is immersed in a stripping solution. This removes the resist layer 20R. However, the method of removing the resist layer 20R is not limited to this. By performing the step of removing the resist layer 20R, a fourth intermediate 4M is obtained.

[0069] 8, a process of forming metal layers 70a and 70b is performed. Specifically, the metal layer 70a is formed on the surface of the protruding portion 32a of the conductive member 30a, and the metal layer 70b is formed on the surface of the protruding portion 32b of the conductive member 30b.

[0070] An example of a method for forming the metal layers 70a, 70b is electroless plating. When forming the metal layers 70a, 70b by electroless plating, the fourth intermediate 4M (see FIG. 7) is immersed in a first electroless plating solution, a second electroless plating solution, and a third electroless plating solution in sequence. This forms a first layer, a second layer, and a third layer in sequence from the surfaces of the protrusions 32a, 32b. However, the method for forming the metal layers 70a, 70b is not limited to this. By performing the step of forming the metal layers 70a, 70b, a fifth intermediate 5M is obtained.

[0071] Subsequently, as shown in FIG. 9, a process of forming the protective film 40 is performed. Specifically, the protective film 40 is formed by atomic layer deposition. First, the fifth intermediate 5M is transferred into a chamber of a film forming apparatus for performing atomic layer deposition. Next, in the fifth intermediate 5M, for example, two types of precursors are alternately supplied toward the regions around the conductive members 30a, 30b including the gaps S1, S2. When the two types of precursors are alternately supplied, the conductive members 30a, 30b are heated to a temperature of 150° C. or more and 250° C. or less. Here, "heating the conductive members 30a, 30b to a temperature of 150° C. or more and 250° C. or less" is synonymous with setting the temperature in the chamber of the film forming apparatus to a temperature of 150° C. or more and 250° C. or less. The temperature in the chamber of the film forming apparatus can be measured, for example, using a temperature sensor provided in the chamber. This allows the protective film 40 covering the gaps S1, S2 to be formed.

[0072] Since the atomic layer deposition method is a film formation method capable of depositing atomic layers of each precursor one by one, it is suitable as a film formation method for covering narrow areas such as the gaps S1 and S2 with the protective film 40. In addition, when the protective film 40 is formed by using the atomic layer deposition method, the conductive members 30a and 30b are heated to a temperature of 150°C or more and 250°C or less, so that the gaps S1 and S2 can be expanded according to the thermal expansion of the conductive members 30a and 30b. This allows the protective film 40 to be in close contact with the upper surface 11a of the substrate 11 and to extend to the depths of the gaps S1 and S2. As a result, even if the conductive members 30a and 30b thermally expand after the protective film 40 is formed, the protective film 40 and the substrate 11 maintain a state of being in close contact with each other. That is, even if exposed to a high-temperature environment, a gap is unlikely to be formed between the protective film 40 and the substrate 11. This reduces the possibility of corrosive substances penetrating into the protective film 40 through the gap between the protective film 40 and the base material 11, corroding the conductive members 30a, 30b, and thus makes it possible to obtain a highly reliable light emitting device 1.

[0073] In the process of forming the protective film 40, it is preferable to form the protective film 40 so as to cover the surfaces of the protrusions 32a, 32b, the side covering layer 25, and the upper surface covering layer 26 in addition to the regions covering the gaps S1, S2. This can further reduce the situation in which corrosive substances penetrate into the inside of the protective film 40 and corrode the conductive members 30a, 30b. It is also preferable to form the protective film 40 so as to integrally cover the side covering layer 25 and the upper surface covering layer 26. This can reduce peeling of the side covering layer 25 and the upper surface covering layer 26, and can also reduce peeling at the boundary between the side covering layer 25 and the upper surface covering layer 26, which has relatively low adhesion to the semiconductor structure 21.

[0074] In the process of forming the protective film 40, it is preferable to sequentially form the first insulating film 41 and the second insulating film 42, which have different linear expansion coefficients, on the surfaces of the conductive members 30a and 30b. As an example, the first insulating film 41 is a film containing aluminum oxide, and the second insulating film 42 is a film containing silicon oxide. At this time, the first insulating film 41 and the second insulating film 42 may be formed in one layer each. Alternatively, the first insulating film 41 and the second insulating film 42 may be formed alternately, and the first insulating film 41 and the second insulating film 42 may be formed in multiple layers each. By forming the protective film 40 including the first insulating film 41 and the second insulating film 42, which have different linear expansion coefficients, it is possible to reduce the formation of a series of cracks penetrating the inside and outside of the protective film 40. As a result, it is possible to reduce the situation in which a corrosive substance penetrates into the inside of the protective film 40 and corrodes the conductive members 30a and 30b.

[0075] When forming the first insulating film 41 and the second insulating film 42, the film forming apparatus alternately supplies two types of precursors for forming the first insulating film 41 to the fifth intermediate 5M in the chamber, and then alternately supplies another two types of precursors for forming the second insulating film 42. When forming a plurality of first insulating films 41 and a plurality of second insulating films 42, the film forming apparatus repeats these steps. By performing the step of forming the protective film 40, a sixth intermediate 6M is obtained.

[0076] 10, a step of covering the upper surface and side surfaces of the semiconductor structure 21 with a light shielding member 80 is performed. Specifically, the side surfaces of the semiconductor structure 21 are covered with the light shielding member 80 via the protective film 40 and the side surface covering layer 25. In addition, the upper surface of the semiconductor structure 21 is covered with the light shielding member 80 via the protective film 40 and the upper surface covering layer 26. By performing the step of covering the upper surface and side surfaces of the semiconductor structure 21 with the light shielding member 80, a seventh intermediate body 7M is obtained.

[0077] Next, as shown in FIG. 11, a process is performed to remove region 81 of light-shielding member 80 that overlaps with upper surface covering layer 26 when viewed from above (hereinafter referred to as "region 81 of light-shielding member 80") and region 45 of protective film 40 that is above and overlaps with upper surface covering layer 26 (hereinafter referred to as "region 45 of protective film 40").

[0078] As an example of a method for removing the region 81 of the light shielding member 80 and the region 45 of the protective film 40, for example, a method of blowing dry ice particles to remove the region 81 of the light shielding member 80 and the region 45 of the protective film 40 is given. As a result, the region 82 of the light shielding member 80 that covers the side covering layer 25 of the light emitting element 20 remains. Furthermore, as a result of removing the region 45 of the protective film 40, the thickness of the region that covers the upper surface covering layer 26 becomes smaller than the thickness of the region that covers the side covering layer 25. This makes it possible to reduce the influence of the protective film 40 on the light extraction efficiency of the semiconductor structure 21. However, the method for removing the region 81 of the light shielding member 80 and the region 45 of the protective film 40 is not limited to this.

[0079] Through these steps, the light emitting device 1 is obtained. However, the manufacturing method of the light emitting device 1 may include other steps as appropriate. The manufacturing method of the light emitting device 1 may include, for example, a step of forming a wavelength conversion member 90 above the light emitting element 20 after performing a step of removing the region 81 of the light blocking member 80 and the region 45 of the protective film 40. In addition, the manufacturing method of the light emitting device 1 may include, for example, a step of arranging the wire wiring 60 that electrically connects the substrate 10 and the package substrate 50, and a step of forming a covering member 95 that covers the wire wiring 60 after performing the step of arranging the wire wiring 60.

[0080] Although the preferred embodiments have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims.

[0081] Aspects of the present disclosure are, for example, as follows. <Item 1> A step of preparing a substrate having a base material and a pair of wiring portions disposed on an upper surface side of the base material; A step of disposing a light-emitting element having a semiconductor structure and a pair of electrodes disposed on a lower surface of the semiconductor structure above the substrate such that the pair of electrodes and the pair of wiring portions face each other; forming a conductive member including copper, which electrically connects the pair of wiring portions and the pair of electrodes, so as to have a main body portion overlapping the wiring portions in a top view, and a protruding portion protruding outward from the wiring portions with a gap formed between the main body portion and the base material; heating the conductive member at a temperature of 150° C. to 250° C. to widen the gap, and forming a protective film in at least the gap by atomic layer deposition; A method for manufacturing a light emitting device, comprising: <Item 2> The method for manufacturing a light emitting device according to <Item 1>, wherein in the step of forming the protective film, a first insulating film and a second insulating film having different linear expansion coefficients are formed in this order on the surface of the conductive member. <Item 3> The first insulating film is a film containing aluminum oxide, The method for producing a light emitting device according to <Item 2> above, wherein the second insulating film is a film containing silicon oxide. <Item 4> The method further includes a step of forming a side covering layer that covers the side surface of the semiconductor structure and a top covering layer that covers the top surface of the semiconductor structure, The method for manufacturing a light emitting device described in any one of <Item 1> to <Item 3>, wherein in the process of forming the protective film, the protective film is formed so as to integrally cover the side covering layer and the upper covering layer. <Item 5> After the step of forming the protective film, a step of covering an upper surface and a side surface of the semiconductor structure with a light shielding member; removing a region of the light blocking member that overlaps with the top surface covering layer and a region of the protective film that is above the region that overlaps with the top surface covering layer when viewed from above; Further comprising: The method for producing a light emitting device according to <Item 4>, wherein the upper surface of the semiconductor structure is a light extraction surface. <Item 6> In the step of forming the conductive member, a pair of the conductive members is formed, one of the pair of conductive members electrically connects one of the pair of electrodes to one of the pair of wiring portions, and the other of the pair of conductive members electrically connects the other of the pair of electrodes to the other of the pair of wiring portions, The method for manufacturing a light-emitting device described in any one of <Item 1> to <Item 5>, wherein, in a cross section passing through the semiconductor structure and the pair of electrodes, the center of the width direction of one of the pair of conductive members is located outside the center of the width direction of one of the pair of electrodes, and the center of the width direction of the other of the pair of conductive members is located outside the center of the width direction of the other of the pair of electrodes. <Item 7> A substrate having a base material and a pair of wiring portions arranged on an upper surface side of the base material; A light emitting element having a semiconductor structure and a pair of electrodes disposed on a lower surface of the semiconductor structure; a conductive member electrically connecting the pair of wiring portions and the pair of electrodes, containing copper, and having a main body portion overlapping the wiring portions in a top view, and a protrusion portion protruding outward from the wiring portions with a gap generated between the main body portion and the base material; a protective film covering at least the gap and including a first insulating film and a second insulating film having different linear expansion coefficients; A light emitting device comprising: <Item 8> The first insulating film is a film containing aluminum oxide, The light emitting device according to <Item 7>, wherein the second insulating film is a film containing silicon oxide. <Item 9> The light emitting element further has a side covering layer that covers a side surface of the semiconductor structure and an upper surface covering layer that covers an upper surface of the semiconductor structure, The light emitting device according to <Item 7> or <Item 8>, wherein the protective film further integrally covers the side covering layer and the upper covering layer. <Item 10> The upper surface of the semiconductor structure corresponds to a light extraction surface from which light emitted by the semiconductor structure is extracted, The light emitting device according to <Item 9>, wherein the thickness of the protective film in a region that covers the top surface covering layer is smaller than the thickness of a region that covers the side surface covering layer. <Item 11> A pair of the conductive members is provided, one of the pair of conductive members electrically connects one of the pair of electrodes and one of the pair of wiring portions; the other of the pair of conductive members electrically connects the other of the pair of electrodes and the other of the pair of wiring portions; In a cross section passing through the semiconductor structure and the pair of electrodes, A light-emitting device described in any one of <Item 7> to <Item 10>, wherein the widthwise center of one of the pair of conductive members is located outside the widthwise center of one of the pair of electrodes, and the widthwise center of the other of the pair of conductive members is located outside the widthwise center of the other of the pair of electrodes. [Explanation of symbols]

[0082] 1 Light emitting device 10 Substrate 11 Base material 12a,12b wiring section 20 Light emitting element 21 Semiconductor structure 22a,22b electrode 25 Side cover layer 26 Top coating layer 30a, 30b Conductive member 31a,31b Main body 32a,32b protrusion S1,S2 gap 40 Protective film 41 First insulating film 42 Second insulating film 50 Package Substrate 60 Wire Routing 70a,70b Metal layer 80 Light blocking material 90 Wavelength conversion material 95 Covering materials

Claims

1. A step of preparing a substrate having a base material and a pair of wiring portions disposed on an upper surface side of the base material; A step of disposing a light emitting element having a semiconductor structure and a pair of electrodes disposed on a lower surface of the semiconductor structure above the substrate such that the pair of electrodes and the pair of wiring portions face each other; forming a conductive member including copper, which electrically connects the pair of wiring portions and the pair of electrodes, so as to have a main body portion overlapping the wiring portions in a top view, and a protruding portion protruding outward from the wiring portions with a gap formed between the main body portion and the base material; heating the conductive member at a temperature of 150° C. to 250° C. to widen the gap, and forming a protective film in at least the gap by atomic layer deposition; A method for manufacturing a light emitting device, comprising:

2. In the step of forming the protective film, a first insulating film and a second insulating film having different linear expansion coefficients are formed in this order on the surface of the conductive member. A method for manufacturing the light emitting device according to claim 1 .

3. the first insulating film is a film containing aluminum oxide, The second insulating film is a film containing silicon oxide. A method for manufacturing the light emitting device according to claim 2 .

4. The method further includes forming a side covering layer that covers a side surface of the semiconductor structure and a top covering layer that covers a top surface of the semiconductor structure, In the step of forming the protective film, the protective film is formed so as to integrally cover the side covering layer and the upper surface covering layer. A method for manufacturing a light emitting device according to claim 1 or 2.

5. After the step of forming the protective film, a step of covering an upper surface and a side surface of the semiconductor structure with a light shielding member; removing a region of the light blocking member that overlaps with the top surface covering layer and a region of the protective film that is above the region that overlaps with the top surface covering layer when viewed from above; Further comprising: The top surface of the semiconductor structure is a light extraction surface. A method for manufacturing a light emitting device according to claim 4 .

6. In the step of forming the conductive member, a pair of the conductive members is formed, one of the pair of conductive members electrically connects one of the pair of electrodes to one of the pair of wiring portions, and the other of the pair of conductive members electrically connects the other of the pair of electrodes to the other of the pair of wiring portions, in a cross section passing through the semiconductor structure and the pair of electrodes, a center in a width direction of one of the pair of conductive members is located outside a center in a width direction of one of the pair of electrodes, and a center in a width direction of the other of the pair of conductive members is located outside a center in a width direction of the other of the pair of electrodes; A method for manufacturing a light emitting device according to claim 1 or 2.

7. A substrate having a base material and a pair of wiring portions disposed on an upper surface side of the base material; A light emitting element having a semiconductor structure and a pair of electrodes disposed on a lower surface of the semiconductor structure; a conductive member electrically connecting the pair of wiring portions and the pair of electrodes, containing copper, and having a main body portion overlapping the wiring portions in a top view, and a protrusion portion protruding outward from the wiring portions with a gap generated between the main body portion and the base material; a protective film covering at least the gap and including a first insulating film and a second insulating film having different linear expansion coefficients; A light emitting device comprising:

8. the first insulating film is a film containing aluminum oxide, The second insulating film is a film containing silicon oxide. The light emitting device according to claim 7.

9. The light emitting device further includes a side covering layer that covers a side surface of the semiconductor structure and an upper surface covering layer that covers an upper surface of the semiconductor structure; The protective film further integrally covers the side covering layer and the upper covering layer.

9. The light emitting device according to claim 7 or 8.

10. an upper surface of the semiconductor structure corresponds to a light extraction surface through which light emitted by the semiconductor structure is extracted; The thickness of the protective film in a region covering the upper surface covering layer is smaller than the thickness of a region covering the side surface covering layer.

10. The light emitting device according to claim 9.

11. A pair of the conductive members is provided, one of the pair of conductive members electrically connects one of the pair of electrodes and one of the pair of wiring portions; the other of the pair of conductive members electrically connects the other of the pair of electrodes and the other of the pair of wiring portions; In a cross section passing through the semiconductor structure and the pair of electrodes, a center in a width direction of one of the pair of conductive members is located outside a center in a width direction of one of the pair of electrodes, and a center in a width direction of the other of the pair of conductive members is located outside a center in a width direction of the other of the pair of electrodes; 9. The light emitting device according to claim 7 or 8.

Images