Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method that can facilitate adhesion of a solvent to a substrate.SOLUTION: A solvent supply unit 19 of a substrate processing apparatus 1 is disposed at a position higher than an opening 2A on the upper surface of a processing tank 2, and supplies mist of a solvent from the outside of the processing tank 2 toward the inside of the processing tank 2 in a plan view. When the substrate W is immersed in the processing liquid, a control unit 61 performs a solvent supply operation of reducing the pressure in a chamber 3 and supplying the mist of the solvent from the solvent supply unit 19. In a solvent supply state in which the pressure in the chamber 3 is reduced and the solvent is supplied, the control unit 61 causes a lifter 4 to remove the substrate W from the processing liquid in the processing tank 2, and then opens a QDR valve 11 to discharge the processing liquid from the processing tank 2. In the solvent supply state, the control unit 61 causes the lifter 4 to lower the substrate W to a lower position H3 in the processing tank 2 where no processing liquid is stored, and then causes the lifter 4 to raise the substrate W.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate, for example, a semiconductor substrate, a substrate for FPD (Flat Panel Display), a glass substrate for a photomask, a substrate for an optical disk, a substrate for a magnetic disk, a ceramic substrate, a substrate for a solar cell, etc. For example, the FPD includes a liquid crystal display device, an organic EL (electroluminescence) display device, etc. [Background technology]

[0002] A conventional substrate processing apparatus includes a chamber, a processing tank installed in the chamber, and a holder for holding a substrate (see, for example, Patent Document 1). The processing tank stores a processing liquid. The substrate held by the holder is raised and lowered between a lower position in the processing tank and an upper position in the chamber above the processing tank.

[0003] The substrate processing apparatus further includes a solvent discharge unit and a water repellent discharge unit. The solvent discharge unit and the water repellent discharge unit are each disposed in the chamber. The solvent discharge unit discharges a vapor of isopropyl alcohol (IPA). The water repellent discharge unit discharges a water repellent vapor.

[0004] The substrate held by the holder is immersed in the processing liquid in the processing tank. The pressure in the chamber is then reduced, and IPA vapor is discharged from the solvent discharge unit into the chamber. In this state, the substrate is pulled up above the processing tank. This exposes the substrate to an atmosphere of IPA vapor, thereby replacing the processing liquid attached to the substrate with IPA (solvent). Then, water repellent vapor is discharged from the water repellent discharge unit into the chamber. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2023-020268 A Summary of the Invention [Problem to be solved by the invention]

[0006] However, IPA vapor does not adhere well to the substrate, and the replacement process with IPA (solvent) may be insufficient. For example, if the processing liquid (e.g., pure water) remains on the substrate, the water-repellent process (silylation process) becomes insufficient. As a result, it becomes difficult to effectively prevent pattern collapse.

[0007] The present invention has been made in view of the above circumstances, and has an object to provide a substrate processing apparatus and a substrate processing method that can make it easier for a solvent to adhere to a substrate. [Means for solving the problem]

[0008] In order to achieve the above object, the present invention has the following configuration: That is, a substrate processing apparatus for processing a substrate according to the present invention includes a processing tank for storing a processing liquid, a chamber accommodating the processing tank, a vacuum pump for reducing the pressure inside the chamber, a lifter for raising and lowering the substrate within the chamber while holding the substrate, an opening / closing valve for discharging the processing liquid from the processing tank, a solvent supply unit provided within the chamber, the solvent supply unit being located at a position higher than an opening formed in an upper surface of the processing tank and supplying at least one of a mist and droplets of solvent from the outside of the processing tank toward the inside of the processing tank in a plan view, and a control unit, wherein the control unit controls a control unit to control ... The control unit performs a solvent supply operation in which the pressure reduction pump reduces the pressure inside the chamber and supplies the solvent in at least one of a mist and droplet form from the solvent supply unit, and when in a solvent supply state in which the control unit reduces the pressure inside the chamber and supplies the solvent, the control unit causes the lifter to remove the substrate from the processing liquid in the processing tank, and then opens the on-off valve to discharge the processing liquid from the processing tank, and when in the solvent supply state, the control unit causes the lifter to lower the substrate to a position in the processing tank where the processing liquid is not stored, and then performs a substrate lifting operation in which the lifter lifts the substrate.

[0009] According to the substrate processing apparatus of the present invention, the solvent supply unit supplies at least one of the solvent in the form of mist and droplets. This makes it easier for the solvent to adhere to the substrate after the substrate is removed from the processing liquid stored in the processing tank than with solvent vapor. Therefore, the solvent can be efficiently adhered to the substrate.

[0010] Furthermore, in the above-mentioned substrate processing apparatus, the substrate lifting operation, when in the solvent supply state, causes the lifter to lower the substrate to a position within the processing tank, keeps the substrate waiting at the position within the processing tank for a preset lower waiting time, and then causes the lifter to raise the substrate, and keeps the substrate waiting at the raised position for a preset upper waiting time, preferably the lower waiting time being longer than the upper waiting time.

[0011] For example, when a mist-like solvent is supplied, the substrate is raised and lowered to suppress uneven adhesion of the solvent. At this time, the lower standby time during which the substrate is kept waiting at a position in the processing tank is made longer than the upper standby time during which the substrate is kept waiting at a position to which the substrate is elevated. This is because, for example, when a mist-like solvent is supplied, a larger amount of solvent adheres to the substrate when the substrate is placed at a position in the processing tank than when the substrate is placed at a position above the processing tank in the chamber. This allows the solvent to adhere to the substrate more efficiently. That is, the amount of solvent consumed can be reduced and the processing time can be shortened.

[0012] In the above-mentioned substrate processing apparatus, it is preferable that the substrate raising and lowering operation is performed a number of times. The more the substrate raising and lowering operation is repeated, the more the unevenness of the solvent adhesion can be suppressed.

[0013] In addition, in the above-mentioned substrate processing apparatus, it is preferable that the apparatus further includes a water repellent nozzle for supplying water repellent vapor into the chamber, and the control unit supplies the water repellent vapor to the substrate from the water repellent nozzle after performing the substrate lifting operation and after stopping the supply of the solvent.

[0014] Since at least one of the solvent in the form of mist and droplets is supplied from the solvent supply unit, the solvent can be easily attached to the substrate. Therefore, it is possible to prevent the treatment liquid from remaining on the substrate due to insufficient replacement treatment with the solvent. In addition, the treatment liquid remaining on the substrate prevents the water repellent agent from adhering to the substrate. By performing the replacement treatment with the solvent sufficiently, the water repellent treatment using the water repellent agent can be performed well.

[0015] In the above-mentioned substrate processing apparatus, it is preferable that the control unit, after stopping the supply of the water repellent vapor, causes the decompression pump to reduce the pressure in the chamber and performs a second solvent supply operation to supply at least one of the solvent in the form of mist and droplets from the solvent supply unit, thereby washing away the water repellent and particles derived from the water repellent.

[0016] In the above-described substrate processing apparatus, it is preferable that the second solvent supply operation is performed while the lifter is holding the substrate at a position in the processing tank where the processing liquid is not stored, thereby increasing the amount of solvent adhering to the substrate when washing away a water repellent or the like.

[0017] Furthermore, in the above-mentioned substrate processing apparatus, when the second solvent supply operation is being performed, the control unit causes the lifter to lower the substrate to a position within the processing tank, keeps the lifter holding the substrate at that position within the processing tank for a predetermined second lower waiting time, and then causes the lifter to raise the substrate and keeps the lifter holding the substrate at the raised position for a predetermined second upper waiting time, and it is preferable that the second lower waiting time is longer than the second upper waiting time.

[0018] For example, when a mist-like solvent is supplied, the substrate is raised and lowered to suppress uneven adhesion of the solvent. At this time, the lower standby time during which the substrate is kept waiting at a position in the processing tank is made longer than the upper standby time during which the substrate is kept waiting at a position to which the substrate is elevated. This is because, for example, when a mist-like solvent is supplied, a larger amount of solvent adheres to the substrate when the substrate is placed at a position in the processing tank than when the substrate is placed at a position above the processing tank in the chamber. This allows the solvent to adhere to the substrate more efficiently. That is, the amount of solvent consumed can be reduced and the processing time can be shortened.

[0019] Further, a substrate processing method according to the present invention is a substrate processing method for a substrate processing apparatus including a processing tank for storing a processing liquid, a chamber accommodating the processing tank, a vacuum pump for reducing the pressure inside the chamber, a lifter for raising and lowering the substrate within the chamber while holding the substrate, and an open / close valve for discharging the processing liquid from the processing tank, the method including a solvent supplying step of causing the vacuum pump to reduce the pressure inside the chamber while the substrate is immersed in the processing liquid and supplying at least one of a mist form and droplet form of solvent from a solvent supplying unit while the chamber is being reduced in pressure and the solvent is being supplied, and a solvent supplying step of causing the lifter to remove the substrate from the processing liquid in the processing tank while the chamber is being reduced in pressure and the solvent is being supplied. The method comprises: a substrate removal process; a processing liquid discharge process for discharging the processing liquid from the processing tank by opening the on-off valve while in the solvent supply state and after the substrate removal process has been performed; and a substrate lifting process for lowering the substrate onto the lifter while in the solvent supply state to a position within the processing tank where the processing liquid is not stored, and then lifting the substrate onto the lifter, wherein the solvent supply unit is provided within the chamber, the solvent supply unit is positioned at a position higher than an opening formed on an upper surface of the processing tank, and the solvent is supplied in at least one of a mist form and a droplet form from the outside of the processing tank toward the inside of the processing tank in a planar view. Effect of the Invention

[0020] According to the substrate processing apparatus and the substrate processing method of the present invention, it is possible to make it easier for the solvent to adhere to the substrate. [Brief description of the drawings]

[0021] [Figure 1] 1 is a vertical sectional view showing a schematic configuration of a substrate processing apparatus according to a first embodiment. [Diagram 2] FIG. 4 is a plan view showing the mist nozzles of two solvent supply units. [Diagram 3] 5A to 5C are diagrams for explaining the operation of the substrate processing apparatus according to the first embodiment. [Figure 4] 4 is a timing chart showing the operation of the substrate processing apparatus in accordance with the first embodiment. [Diagram 5] 13 is a timing chart for explaining three substrate lifting and lowering operations in a solvent supply state. [Figure 6] FIG. 6(a) shows the experimental results comparing the amount of IPA adhering to a substrate when a mist of IPA was supplied under four conditions, (b) shows a substrate placed in an upper position above the processing tank, and (c) shows a substrate placed in a lower position within the processing tank. [Figure 7] FIG. 11 is a diagram for explaining step S08A according to the second embodiment. [Figure 8] 10(a) and 10(b) are timing charts illustrating the operation of the substrate processing apparatus in accordance with the second embodiment. [Figure 9] FIG. 11 is a vertical sectional view showing a schematic configuration of a substrate processing apparatus according to a third embodiment. Example 1

[0022] Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a vertical sectional view showing a schematic configuration of a substrate processing apparatus according to the first embodiment. Fig. 2 is a plan view showing mist nozzles 29 and 30 of two solvent supply units 19.

[0023] (1) Configuration of the substrate processing device Please refer to Fig. 1. The substrate processing apparatus 1 performs drying processing on a plurality of (e.g., 50 or 25) substrates W. Each substrate W is formed, for example, in a disk shape. A pattern of, for example, elements is formed on the front surface (front surface or main surface) of each substrate W. In this case, the surface of the substrate W opposite to the front surface is called the back surface.

[0024] The substrate processing apparatus 1 includes a processing tank 2 for storing a processing liquid, a chamber 3 for accommodating the processing tank 2, a lifter 4, and two ejection pipes 5. The processing tank 2 is disposed in the lower part of the chamber 3, and is disposed away from the bottom surface of the chamber 3. An opening 2A is formed in the upper surface of the processing tank 2. The processing liquid that overflows from the opening 2A is stored in the bottom part of the chamber 3.

[0025] The lifter 4 holds the substrates W and raises and lowers the substrates W within the chamber 3. The lifter 4 includes a holder 4A that holds the substrates W in a vertical position, and a lifting unit 4B that raises and lowers the holder 4A in the vertical direction (Z direction). The substrates W held by the holder 4A are arranged at equal intervals in the thickness direction of each substrate W. For example, in FIG. 1, the substrates W are aligned in the Y direction.

[0026] The lifting unit 4B includes, for example, an electric motor. The lifting unit 4B can move the multiple substrates W held by the holder 4A to, for example, a transfer position H1 above the chamber 3, an upper position H2 above the processing bath 2 in the chamber 3, and a lower position (immersion processing position) H3 in the processing bath 2. Note that the upper position H2 is preferably a position where the lower ends of the substrates W are higher than two solvent supply units 19 described later. Alternatively, the upper position H2 may be a height position where the two solvent supply units 19 are disposed between the centers of the substrates W and the lower ends of the substrates W.

[0027] Two ejection pipes 5 are provided at the bottom of the processing tank 2 to supply processing liquid into the processing tank 2. Each ejection pipe 5 is formed linearly along the Y direction in which multiple substrates W are aligned. Each ejection pipe 5 has multiple ejection ports arranged in the Y direction.

[0028] The tip of the processing liquid pipe 7 branches into two. As a result, the two tip ends of the processing liquid pipe 7 are connected to the two jet pipes 5, respectively. The base end of the processing liquid pipe 7 is connected to a processing liquid supply source 9. The processing liquid supply source 9 sends, for example, pure water as the processing liquid to the processing liquid pipe 7. For example, deionized water (DIW) is used as the pure water. An on-off valve V1 is provided in the processing liquid pipe 7. The on-off valve V1 supplies the pure water and stops the supply of the pure water. For example, when the on-off valve V1 is opened, the pure water is supplied from the two jet pipes 5. On the other hand, when the on-off valve V1 is closed, the supply of the pure water from the two jet pipes 5 is stopped.

[0029] In addition, a diluted IPA liquid obtained by diluting an isopropyl alcohol (IPA) liquid with pure water may be used as the processing liquid. Furthermore, the two ejection pipes 5 may be configured to selectively eject the pure water and the diluted IPA liquid.

[0030] The substrate processing apparatus 1 also includes a QDR valve 11 provided at the bottom of the processing tank 2. The QDR valve 11 discharges a processing liquid (e.g., pure water) from the processing tank 2. Specifically, the QDR valve 11 discharges the pure water in the processing tank 2 to the bottom of the chamber 3. When the QDR valve 11 is opened, the pure water in the processing tank 2 is rapidly discharged to the bottom of the chamber 3. When the QDR valve 11 is closed, the pure water can be stored in the processing tank 2. The QDR valve 11 corresponds to an opening / closing valve of the present invention.

[0031] The chamber 3 includes an opening 3A through which multiple substrates W pass, and an upper cover 13 that closes the opening 3A. The opening 3A is provided in the ceiling of the chamber 3. When the upper cover 13 is opened, multiple substrates W can pass through the opening 3A. When the upper cover 13 is closed, the space within the chamber 3 is closed.

[0032] The substrate processing apparatus 1 also includes two inert gas nozzles 15, two water repellent vapor nozzles 17, and two solvent supply units (two nozzle rows) 19. The two inert gas nozzles 15, the two water repellent vapor nozzles 17, and the two solvent supply units 19 are each provided in the chamber 3. The solvent supply units 19 correspond to the solvent supply units of the present invention. The water repellent vapor nozzle 17 corresponds to the water repellent nozzle of the present invention.

[0033] Between the upper cover 13 and the treatment tank 2, two inert gas nozzles 15, two water repellent vapor nozzles 17, and two solvent supply units 19 are arranged in this order from the top. A more specific explanation will be given. The two inert gas nozzles 15 are arranged near the upper cover 13. The two inert gas nozzles 15 are also arranged between the upper cover 13 and the two water repellent vapor nozzles 17. The two water repellent vapor nozzles 17 are arranged between the two inert gas nozzles 15 and the two solvent supply units 19.

[0034] The two solvent supply units 19 are disposed between the two water repellent steam nozzles 17 and the treatment tank 2. The two solvent supply units 19 are disposed at a position higher than the opening 2A formed in the upper surface of the treatment tank 2. The two solvent supply units 19 are disposed near the outer edge of the opening 2A of the treatment tank 2, i.e., near the upper end of the side wall of the treatment tank 2.

[0035] Each solvent supply unit 19 supplies a mist of solvent from the outside of the treatment tank 2 (or the opening 2A) toward the inside of the treatment tank 2 in a plan view. That is, as shown in Fig. 2, the two solvent supply units 19 are arranged on both sides of the treatment tank 2 (or the opening 2A) in a plan view. The two inert gas nozzles 15 are also arranged on both sides of the treatment tank 2 in a plan view. The two water repellent vapor nozzles 17 are also arranged on both sides of the treatment tank 2 in a plan view.

[0036] The two inert gas nozzles 15 and the two water repellent vapor nozzles 17 each extend linearly in the Y direction. Each of the inert gas nozzles 15 and the water repellent vapor nozzles 17 is formed in a tubular shape. Each of the inert gas nozzles 15 and the water repellent vapor nozzles 17 has a plurality of outlets arranged in the Y direction.

[0037] Each of the two inert gas nozzles 15 supplies an inert gas into the chamber 3. The tip of the supply pipe 21 branches into two. As a result, the two tips of the supply pipe 21 are connected to the two inert gas nozzles 15, respectively, as shown in FIG. 1. The base end of the supply pipe 21 is connected to a first inert gas supply source 23. The first inert gas supply source 23 sends an inert gas, such as nitrogen gas, to the supply pipe 21. An on-off valve V2 is provided in the supply pipe 21. The on-off valve V2 starts and stops the supply of the inert gas.

[0038] The two water repellent vapor nozzles 17 each supply water repellent vapor into the chamber 3. The tip of the supply pipe 25 branches into two. As a result, the two tip ends of the supply pipe 25 are connected to the two water repellent vapor nozzles 17, respectively. The base end of the supply pipe 25 is connected to a water repellent vapor supply source 27. The water repellent vapor supply source 27 sends water repellent vapor to the supply pipe 25. The water repellent vapor is generated by evaporating the liquid water repellent by a heater. The water repellent vapor may contain an inert gas (e.g., nitrogen gas) as a carrier gas. An opening / closing valve V3 is provided in the supply pipe 25. The opening / closing valve V3 starts and stops the supply of the water repellent vapor. The water repellent modifies the surface of the substrate W to make it water repellent. For example, a silicon-based water repellent or a metal-based water repellent is used as the water repellent. The water repellent is also called a silylation agent.

[0039] Each of the two solvent supply units 19 supplies a mist of solvent into the chamber 3. See FIG. 2. The first solvent supply unit 19 includes a plurality of mist nozzles 29 arranged in the Y direction. The second solvent supply unit 19 includes a plurality of mist nozzles 30 arranged in the Y direction. Each of the mist nozzles 29, 30 is configured as a two-fluid nozzle. The two-fluid nozzle is a nozzle that mixes a solvent and an inert gas and ejects a mist of the solvent. That is, the solvent is atomized (sprayed) by the two-fluid nozzle.

[0040] A tip of a solvent supply pipe 31 is connected to each mist nozzle 29, 30 (solvent supply unit 19). For example, when the solvent supply unit 19 is equipped with six mist nozzles 29, 30, the tip of the solvent supply pipe 31 branches into six. For example, the six tip portions are connected to the six mist nozzles 29, 30, respectively. A base end of the solvent supply pipe 31 is connected to a solvent supply source 33. The solvent supply source 33 supplies, for example, isopropyl alcohol (IPA) liquid as a solvent (organic solvent). It is preferable that the solvent is hydrophilic. An opening / closing valve V4 is provided in the solvent supply pipe 31. The opening / closing valve V4 supplies the solvent and stops the supply.

[0041] Further, the tip of an inert gas supply pipe 35 is connected to each mist nozzle 29, 30 (solvent supply unit 19). Similarly, the tip of the inert gas supply pipe 35 branches into six when, for example, the solvent supply unit 19 has six mist nozzles 29, 30. For example, the six tips of the inert gas supply pipe 35 are connected to the six mist nozzles 29, 30, respectively. The base end of the inert gas supply pipe 35 is connected to a second inert gas supply source 37. The second inert gas supply source 37 sends, for example, nitrogen gas as an inert gas. An on-off valve V5 is provided in the inert gas supply pipe 35. The on-off valve V5 supplies the inert gas and stops the supply.

[0042] The substrate processing apparatus 1 also includes a vacuum pump 43. An exhaust port 39 is provided in a side wall of the chamber 3. The exhaust port 39 is disposed below a shield plate 49, which will be described later. An exhaust pipe 41 is connected to the exhaust port 39. An on-off valve V6 and a vacuum pump 43 are provided in the exhaust pipe 41, in this order from the exhaust port 39 side. The vacuum pump 43 exhausts gas from the chamber 3 to reduce the pressure inside the chamber 3.

[0043] Further, a drain port 45 is provided in the bottom wall of the chamber 3. A drain pipe 47 is connected to the drain port 45. An on-off valve V7 is provided in the drain pipe 47. When the on-off valve V7 is opened, liquid such as the processing liquid stored in the bottom part of the chamber 3 is drained through the drain port 45 and the drain pipe 47. When the on-off valve V7 is closed, liquid such as the processing liquid is not drained from the chamber 3.

[0044] The chamber 3 also includes a shield plate 49. The shield plate 49 separates the upper space from the lower space within the chamber 3. It is provided slightly below the upper edge (or opening 2A) of the treatment tank 2. The shield plate 49 is formed so as to surround the treatment tank 2. There are gaps between the shield plate 49 and the outer wall of the treatment tank 2, and between the shield plate 49 and the inner wall of the chamber 3. The treatment liquid, gas, and mist-like solvent flow through these gaps.

[0045] The substrate processing apparatus 1 includes a control unit 61 and a storage unit (not shown). The control unit 61 controls each component of the substrate processing apparatus 1. The control unit 61 includes one or more processors, such as a central processing unit (CPU). The storage unit includes at least one of a read-only memory (ROM), a random-access memory (RAM), and a hard disk, for example. The storage unit stores computer programs required to control each component of the substrate processing apparatus 1.

[0046] For example, the control unit 61 causes the lifter 4 to raise and lower the substrates W, and causes the decompression pump 43 to reduce the pressure in the chamber 3. The control unit 61 also opens the QDR valve 11 to discharge the processing liquid from the processing tank 2 to the bottom of the chamber 3. The control unit 61 also operates the on-off valves V4 and V5 to supply a mist of solvent from the solvent supply unit 19, and operates the on-off valve V3 to supply water repellent vapor from the water repellent vapor nozzle 17 into the chamber 3.

[0047] (2) Operation of the Substrate Processing Apparatus 1 Next, the operation of the substrate processing apparatus 1 will be described with reference to Figures 3 and 4. Note that the lifter 4 is omitted from Figure 3. Also, in Figure 3, the exhaust operation by the pressure reducing pump 43 etc. is indicated by the symbol VAC. In Figure 4, the symbol CL indicates the closed state of the on-off valve V2 etc., and the symbol OP indicates the open state of the on-off valve V2 etc. Also, hereinafter, the multiple substrates W will be appropriately described as "substrates W".

[0048] [Step S01] First immersion process (loading the substrate into the chamber) Pure water is stored in the processing tank 2 as a processing liquid. The pure water is supplied from a jet pipe 5. The lifter 4 receives a plurality of substrates W at a holder 4A from a transfer robot (not shown) at a transfer position H1. The lifter 4 lowers the substrates W from the transfer position H1 to a lower position H3 in the processing tank 2. That is, the lifter 4 immerses the entire substrates W in the pure water in the processing tank 2. By immersing the substrates W in the pure water, the substrates W are cleaned and prevented from drying. Thereafter, the opening 3A of the chamber 3 is closed by the upper cover 13.

[0049] [Step S02] Evacuation of the chamber Thereafter, the on-off valve V2 is opened to supply nitrogen gas into the chamber 3 from the inert gas nozzle 15. Furthermore, while the substrate W is immersed in the processing liquid, the decompression pump 43 decompresses the chamber 3. That is, by opening the on-off valve V6 while operating the decompression pump 43, the gas in the chamber 3 is exhausted through the exhaust port 39 and the exhaust pipe 41. As a result, the chamber 3 is put into a decompressed state (negative pressure state) where the pressure is lower than atmospheric pressure.

[0050] The decompression pump 43 is operated during steps S02 to S08. Similarly, the on-off valve V6 is opened during steps S02 to S08. Note that the inside of the chamber 3 is in a decompressed state during steps S02 to S08 and in step S13.

[0051] [Step S03] Supply of first IPA (creation of mist-like IPA atmosphere) Thereafter, the on-off valve V2 is closed to stop the supply of nitrogen gas from the inert gas nozzle 15. Furthermore, while the substrate W is immersed in the processing liquid, mist-like IPA is supplied from the solvent supply unit 19 while reducing the pressure inside the chamber 3 (solvent supply operation). That is, the on-off valves V4 and V5 are opened to supply mist-like IPA from the solvent supply unit 19 into the chamber 3. As a result, an atmosphere of mist-like IPA is created inside the chamber 3. Note that the on-off valves V4 and V5 are open during steps S03 to S06.

[0052] Also, the mist-like IPA can be contained in the pure water in the processing tank 2. Therefore, it can be said that the IPA liquid is diluted with the pure water in the processing tank 2. This can promote replacement of the pure water adhering to the substrate W with the IPA liquid when the substrate W is taken out of the pure water containing IPA in the processing tank 2 in step S04 described later.

[0053] [Step S04] Supply of first IPA (IPA replacement) Thereafter, when the pressure inside the chamber 3 is reduced and a mist of IPA is being supplied (solvent supply state), the lifter 4 removes the substrate W from the pure water in the processing bath 2. A more detailed explanation will be given. The pressure inside the chamber 3 is reduced and the supply of a mist of IPA from the solvent supply unit 19 continues. In this state, the lifter 4 lifts the substrate W out of the pure water in the processing bath 2. That is, the lifter 4 raises the substrate W from the lower position H3 to the upper position H2.

[0054] When the substrate W is exposed to the mist of IPA, a replacement process is performed in which the deionized water adhering to the substrate W is replaced with IPA. In step S04, the decompression pump 43 may be stopped and the on-off valve V6 may be closed. In this case, the decompressed state is maintained.

[0055] [Step S05] First IPA supply (discharge of pure water from processing tank) Thereafter, the QDR valve 11 is opened to discharge the pure water from the processing tank 2. A more detailed explanation will be given. After step S04 is performed, the pressure inside the chamber 3 is reduced and the state in which the mist-like IPA is supplied (solvent supply state) continues. In this state, the QDR valve 11 is opened to rapidly release the pure water from the processing tank 2 to the bottom surface inside the chamber 3. After the processing tank 2 is emptied, the QDR valve 11 is closed.

[0056] [Step S06] Supply of first IPA (substrate lifting and lowering operation) Thereafter, in the solvent supply state, the lifter 4 lowers the substrate W to a lower position H3 in the processing tank 2 where no pure water is stored, and then performs a substrate lifting operation to lift the substrate W. A more detailed description will be given below. Fig. 5 is a timing chart for explaining three substrate lifting operations in the solvent supply state.

[0057] In step S06, three substrate lifting and lowering operations are performed. In FIG. 5, the first substrate lifting and lowering operation is performed between time points t1 and t5. The second substrate lifting and lowering operation is performed between time points t5 and t9. The third substrate lifting and lowering operation is performed between time points t9 and t13. By performing the substrate lifting and lowering operations, uneven adhesion of the mist-like IPA is suppressed, and the IPA can be uniformly adhered to the substrate W. The three substrate lifting and lowering operations are all the same. Therefore, the first substrate lifting and lowering operation will be described as a representative example.

[0058] 5, step S05 is performed. From time t1 to t2, the lifter 4 lowers the substrate W to a lower position H3 in the processing bath 2. Then, from time t2 to t3, the lifter 4 keeps the substrate W waiting at the lower position H3 for a preset lower waiting time LT. Then, from time t3 to t4, the lifter 4 raises the substrate W to an upper position H2 above the processing bath 2 in the chamber 3. Then, from time t4 to t5, the lifter 4 keeps the substrate W waiting at the upper position H2 to which the substrate W was raised, for a preset upper waiting time UT. In this substrate raising and lowering operation, the lower waiting time LT is set to be longer than the upper waiting time UT.

[0059] When the lower waiting time LT is longer than the upper waiting time UT, IPA is more likely to adhere to the substrate W. This makes it possible to prevent the replacement process with IPA from being insufficient, resulting in pure water remaining on the substrate W. In the next step S07, water repellent vapor is supplied. Here, the pure water remaining on the substrate W prevents the water repellent from adhering to the substrate W. This can be prevented by performing the replacement process with IPA sufficiently.

[0060] Thereafter, second and third substrate raising and lowering operations are performed from time t5 to time t13. Then, at time t13, the supply operation of water repellent vapor in the next step S07 is started. Note that, for example, the descending time (descending speed) from time t1 to t2 is shorter (faster) than the ascending time (ascending speed) from time t3 to t4. In this regard, the descending time may be the same as the ascending time, or may be longer than the ascending time.

[0061] In step S06, three substrate lifting and lowering operations are performed. In this regard, one substrate lifting and lowering operation may be performed. Also, two or four or more substrate lifting and lowering operations may be performed. That is, in step S06, one or more substrate lifting and lowering operations may be performed. In FIG. 5, the symbol MD indicates a height position intermediate between the upper position H2 and the lower position H3. The solvent supply unit 19 may be disposed at or near the height position MD.

[0062] [Step S07] Supply of water repellent vapor Thereafter, exhausting of the chamber 3 continues. Furthermore, by closing the on-off valves V4 and V5, the supply of mist-like IPA from the solvent supply unit 19 is stopped. Thereafter, by opening the on-off valve V3, the water repellent vapor is supplied from the water repellent vapor nozzle 17 into the chamber 3. At this time, the lifter 4 raises and lowers the substrate W so that the substrate W passes between the two water repellent vapor nozzles 17. In this way, the water repellent vapor is supplied uniformly over the entire substrate W. The supply of the water repellent vapor replaces the IPA adhering to the substrate W with the water repellent. The water repellent modifies the surface of the substrate W to make it water repellent. Note that in steps S04 to S06, the replacement process with IPA can be performed sufficiently, so that the water repellent process can be performed sufficiently, and thus pattern collapse can be effectively prevented.

[0063] [Step S08] Supply of second IPA After the supply of the water repellent vapor is stopped, a mist of solvent is supplied from the solvent supply unit 19 (second solvent supply operation). This operation will be specifically described. After step S07, exhausting of the chamber 3 continues. The supply of the water repellent vapor from the water repellent vapor nozzle 17 is stopped by closing the on-off valve V3. In addition, mist of IPA is supplied from the solvent supply unit 19 by opening the on-off valves V4 and V5. This causes the water repellent adhering to the substrate W to be replaced with IPA. That is, the water repellent adhering to the substrate W is washed away by the IPA. In addition, particles derived from the water repellent adhering to the substrate W are washed away by the IPA. These particles are generated, for example, by direct contact between moisture and the water repellent.

[0064] [Step S09] Discharge of pure water outside the chamber After that, the decompression pump 43 is stopped and the on-off valve V6 is closed. This stops the exhaust from within the chamber 3. The on-off valves V4 and V5 are closed to stop the supply of mist-like IPA from the solvent supply unit 19. In addition, the on-off valve V2 is opened to supply nitrogen gas from the inert gas nozzle 15 into the chamber 3. This returns the pressure inside the chamber 3 to atmospheric pressure from the reduced pressure state. After that, the on-off valve V7 is opened to discharge the pure water stored at the bottom of the chamber 3 to the outside of the chamber 3 through the exhaust port 45 and the exhaust pipe 47. When all the pure water is discharged from the bottom of the chamber 3 (after the chamber 3 is emptied), the on-off valve V7 is closed. Nitrogen gas is supplied during steps S09 to S11.

[0065] [Step S10] Cleaning the processing tank (supply of cleaning liquid) Thereafter, the supply of nitrogen gas from the inert gas nozzle 15 continues. In this state, by opening the on-off valve V1, pure water is supplied as a cleaning liquid from the ejection pipe 5 into the processing tank 2. The inside of the processing tank 2 is cleaned with the pure water stored in the processing tank 2. When the pure water is stored in the processing tank 2, the pure water supplied from the ejection pipe 5 into the processing tank 2 may be allowed to overflow from the processing tank 2.

[0066] [Step S11] Cleaning the processing tank (draining the cleaning solution) Thereafter, the supply of nitrogen gas from the inert gas nozzle 15 continues. In this state, the on-off valve V1 is closed to stop the supply of pure water from the ejection pipe 5. Furthermore, the QDR valve 11 is opened to rapidly release the pure water from inside the processing tank 2 to the bottom surface of the chamber 3. Furthermore, the on-off valve V7 is opened to discharge the pure water (cleaning liquid) stored at the bottom of the chamber 3. After the processing tank 2 is emptied, the QDR valve 11 is closed. Furthermore, after the chamber 3 is emptied, the on-off valve V7 is closed.

[0067] [Step S12] Second immersion treatment Thereafter, the supply of nitrogen gas from the inert gas nozzle 15 continues. In this state, the on-off valve V1 is opened to supply pure water from the ejection pipe 5 into the processing tank 2. When a preset amount of pure water is stored in the processing tank 2, the lifter 4 lowers the substrate W from the upper position H2 to the lower position H3. Then, the substrate W is immersed in the pure water in the processing tank 2 for a preset period of time. This performs a cleaning process to further remove particles and the like adhering to the substrate W.

[0068] [Step S13] Third (final) supply of IPA (drying process) Thereafter, the on-off valve V1 is closed to stop the supply of pure water from the ejection pipe 5. Thereafter, the on-off valve V6 is opened while the decompression pump 43 is operating to exhaust the gas in the chamber 3. This places the chamber 3 in a decompressed state. Thereafter, the on-off valves V4 and V5 are opened to supply mist-like IPA from the solvent supply unit 19. After the chamber 3 is filled with an atmosphere of mist-like IPA, the lifter 4 lifts the substrate W from the pure water in the processing bath 2. That is, the lifter 4 raises the substrate W from the lower position H3 to the upper position H2. When the substrate W is exposed to the mist-like IPA, the pure water adhering to the substrate W is replaced with IPA.

[0069] With the exhaust of the interior of the chamber 3 by the vacuum pump 43 or the like continuing, the on-off valves V4 and V5 are closed to stop the supply of the IPA mist from the solvent supply unit 19. With the supply of the IPA mist stopped and the interior of the chamber 3 depressurized, the IPA adhering to the substrate W is actively volatilized, and the substrate W is dried. In the drying process, nitrogen gas may be supplied from the inert gas nozzle 15 after the supply of the IPA mist is stopped.

[0070] [Step S14] Supply of nitrogen gas The decompression pump 43 is stopped and the on-off valve V6 is closed. Furthermore, the on-off valve V2 is opened and nitrogen gas is supplied from the inert gas nozzle 15. This returns the pressure inside the chamber 3 from the reduced pressure state to atmospheric pressure. Thereafter, the QDR valve 11 and the on-off valve V7 are opened to release the pure water from the processing tank 2 and to discharge the pure water from the bottom of the chamber 3.

[0071] [Step S15] Unloading the substrate from the chamber The opening 3A is released by opening the upper cover 13. The lifter 4 lifts the substrate W held by the holder 4A from the upper position H2 to the transfer position H1. The substrate W lifted to the transfer position H1 is moved to the next destination by a transport robot (not shown).

[0072] According to this embodiment, a mist of solvent (e.g., IPA) is supplied from the solvent supply unit 19. This makes it easier for the solvent to adhere to the substrate W than solvent vapor after the substrate W is taken out of the processing liquid (e.g., pure water) stored in the processing tank 2. Therefore, the solvent can be efficiently adhered to the substrate W.

[0073] For example, when a mist-like solvent is supplied, the substrate W is raised and lowered to suppress uneven adhesion of the solvent. At this time, the lower waiting time LT during which the substrate W waits at the lower position H3 in the processing tank 2 is made longer than the upper waiting time UT during which the substrate W waits at the upper position H2 to which the substrate W has been raised. This is because, for example, when a mist-like solvent is supplied, the amount of solvent adhering to the substrate W is greater when the substrate W is disposed at the lower position H3 in the processing tank 2 than when the substrate W is disposed at the upper position H2 above the processing tank 2 in the chamber 3. This allows the solvent to be more efficiently adhered to the substrate W. That is, the amount of solvent consumed can be reduced and the processing time can be shortened.

[0074] Here, the effects are supplemented with experimental results. FIG. 6(a) shows the experimental results comparing the amount of IPA adhering to the substrate W under four conditions when IPA was supplied in mist form. FIG. 6(b) shows a state in which the substrate W is disposed at an upper position H2 above the processing tank 2. FIG. 6(c) shows a state in which the substrate W is disposed at a lower position H3 in the processing tank 2. The lifter 4 is omitted from FIGS. 6(b) and 6(c). Note that in FIG. 6(a), the same IPA processing time means that the same amount of IPA is supplied.

[0075] In Fig. 6(a), the black triangular mark indicates the result when a mist of IPA is supplied from the solvent supply unit 19 when one substrate W is placed at the lower position H3 in the processing tank 2 shown in Fig. 6(c). Moreover, the white triangular mark indicates the result when a mist of IPA is supplied from the solvent supply unit 19 when one substrate W is placed at the upper position H2 above the processing tank 2 shown in Fig. 6(b). Comparing the two, it can be seen that the amount of IPA attached is greater for the black triangular mark (lower position H3 in the processing tank 2).

[0076] In addition, in Fig. 6(a), the black circular marks are the results when a mist of IPA is supplied from the solvent supply unit 19 when 50 substrates W are placed at the lower position H3 in the processing tank 2 shown in Fig. 6(c). In addition, the white circular marks are the results when a mist of IPA is supplied from the solvent supply unit 19 when 50 substrates W are placed at the upper position H2 above the processing tank 2 shown in Fig. 6(b). Comparing the two, it can be seen that the amount of IPA attached is greater for the black circular marks (lower position H3 in the processing tank 2).

[0077] The reason why the amount of IPA adhering to the substrate W when placed at the lower position H3 in the processing bath 2 is greater is believed to be because the IPA in the form of a mist is more likely to remain in the processing bath 2.

[0078] Returning to the explanation of the effects of this embodiment, the substrate lifting and lowering operation is performed multiple times (for example, three times). The more the substrate lifting and lowering operation is repeated, the more the uneven adhesion of the solvent can be suppressed.

[0079] Furthermore, in step S07, the control unit 61 controls the two water repellent vapor nozzles 17 to supply water repellent vapor to the substrate W. This has the following effects. Since the solvent supply unit 19 supplies the solvent in mist form, it is possible to make it easier for the solvent to adhere to the substrate W. This makes it possible to prevent the processing liquid from remaining on the substrate W due to an insufficient solvent replacement process. Furthermore, the processing liquid remaining on the substrate W prevents the water repellent from adhering to the substrate W. By performing a sufficient solvent replacement process, the water repellent processing using the water repellent can be performed satisfactorily. Example 2

[0080] Next, a second embodiment of the present invention will be described with reference to the drawings. Note that descriptions overlapping with those of the first embodiment will be omitted. Fig. 7 is a diagram for explaining step S08A according to the second embodiment. Figs. 8(a) and 8(b) are diagrams for explaining the operation of the substrate processing apparatus 1 according to the second embodiment.

[0081] In the first embodiment, the IPA adhering to the substrate W is replaced with the water repellent agent by the water repellent agent vapor, and then the water repellent agent is washed away with the IPA mist. At this time, the IPA mist is supplied while the substrate W is located at the upper position H2. In this regard, the IPA mist may be supplied while the substrate W is located at the lower position H3 of the processing tank 2 in which no processing liquid (e.g., pure water) is stored. That is, step S08A shown in FIG. 7 is executed instead of step S08 shown in FIG. 3.

[0082] [Step S08A] Supply of second IPA (second solvent supply operation) Please refer to Fig. 7. After the supply of the water repellent vapor is stopped, the pressure inside the chamber 3 is reduced by the decompression pump 43, and mist-like solvent is supplied from the solvent supply unit 19 (second solvent supply operation). This operation will be specifically described. After step S07, exhausting of the inside of the chamber 3 continues. The supply of the water repellent vapor from the water repellent vapor nozzle 17 is stopped by closing the on-off valve V3.

[0083] Thereafter, by opening the on-off valves V4 and V5, a mist of IPA is supplied from the solvent supply unit 19. The lifter 4 also lowers the substrate W from the upper position H2 to the lower position H3. That is, when the lifter 4 causes the substrate W to wait (position) at the lower position H3 in the processing tank 2 where no processing liquid (e.g., pure water) is stored, a mist of solvent is supplied from the solvent supply unit 19 (that is, a second solvent supply operation is performed). Since a mist of IPA is supplied when the substrate W waits at the lower position H3, the amount of IPA adhering to the substrate W can be increased.

[0084] 8(a), by opening the on-off valves V4 and V5, the lifter 4 may lower the substrate W from the upper position H2 to the lower position H3 at the same time as supplying the IPA mist from the solvent supply unit 19. Alternatively, by opening the on-off valves V4 and V5, the lifter 4 may lower the substrate W to the lower position H3 after supplying the IPA mist from the solvent supply unit 19 (see the dashed line indicated by the symbol DL in FIG. 8(a)).

[0085] 8(b), while the lifter 4 is lowering the substrate W toward the lower position H3, the on-off valves V4 and V5 may be opened to supply IPA in a mist form from the solvent supply unit 19. In this case, the substrate W starts to be lowered toward the lower position H3 while the water repellent vapor is being supplied from the water repellent vapor nozzle 17. After the lifter 4 has lowered the substrate W to the lower position H3, i.e., when the substrate W is located at the lower position H3, the solvent supply unit 19 may start to supply IPA in a mist form.

[0086] As shown in FIGS. 8(a) and 8(b), in step S09, the lifter 4 may be raised from the lower position H3 to the upper position H2.

[0087] According to this embodiment, after stopping the supply of the water repellent vapor, the control unit 61 performs a second solvent supply operation in which the pressure reduction pump 43 reduces the pressure in the chamber 3 and the solvent supply unit 19 supplies mist-like solvent. This allows the water repellent and particles derived from the water repellent to be washed away. The second solvent supply operation is performed when the lifter 4 keeps the substrate W waiting at the lower position H3 in the processing tank 2 where no processing liquid is stored. When washing away the water repellent and the like, the amount of solvent adhering to the substrate W can be increased. Therefore, the solvent can be efficiently attached to the substrate. Also, as shown in FIG. 5, the processing time can be shortened compared to the case where the substrate is raised and lowered multiple times. Example 3

[0088] Next, a third embodiment of the present invention will be described with reference to the drawings. Note that descriptions overlapping with the first and second embodiments will be omitted. Fig. 9 is a vertical sectional view showing a schematic configuration of a substrate processing apparatus according to the third embodiment.

[0089] In the first embodiment, the mist nozzles 29 and 30 of the two solvent supply units 19 supply a mist of solvent (for example, IPA). In this regard, in the third embodiment, the mist nozzles 29 and 30 may supply a mist of water repellent.

[0090] Please refer to Fig. 9. The substrate processing apparatus 1 does not have the two water repellent agent vapor nozzles 17 shown in Fig. 1. Therefore, the tip of the supply pipe 25 is connected to the solvent supply pipe 31 between the mist nozzles 29, 30 and the on-off valve V4. Specifically, the tip of the supply pipe 25 is connected to the solvent supply pipe 31 between the branch pipe 65 and the on-off valve V4 shown in Fig. 2. The branch pipe 65 is a member that divides the mist nozzle 29 side and the mist nozzle 30 side.

[0091] The base end of the supply pipe 25 is connected to a water repellent supply source 27A. The water repellent supply source 27A sends a liquid water repellent to the supply pipe 25. An on-off valve V3 is provided in the supply pipe 25. Heaters HT1 and HT2 may be provided between the on-off valve V4 and the solvent supply source 33, and between the on-off valve V3 and the water repellent supply source 27A, respectively. For example, the heater HT2 heats the liquid water repellent passing through the supply pipe 25 from the outside of the supply pipe 25 to a preset temperature. The heater HT1 similarly heats the solvent to a preset temperature.

[0092] With this configuration, the two solvent supply units (two nozzle rows) 19 can selectively supply the solvent (for example, IPA) and the water repellent agent in mist form into the chamber 3.

[0093] The operation of the substrate processing apparatus 1 of this embodiment will be briefly described. In step S07 shown in Fig. 3, the exhaust from the chamber 3 continues. The on-off valves V4 and V5 are closed to stop the supply of mist-like IPA from the two solvent supply units 19. Thereafter, the on-off valves V3 and V5 are opened to supply mist-like water repellent from the two solvent supply units 19 into the chamber 3. At this time, the lifter 4 raises and lowers the substrate W so that the substrate W passes between the two solvent supply units 19. The supply of water repellent vapor replaces the IPA adhering to the substrate W with the water repellent.

[0094] The operation of raising and lowering the substrate W may be performed in the same manner as the substrate raising and lowering operation at time points t1 to t5 shown in Fig. 5. That is, the operation of raising and lowering the substrate W may be performed by having the lifter 4 lower the substrate W to the lower position H3 in the processing tank 2 while the mist-like water repellent agent is being supplied, having the lifter 4 wait at the lower position H3 for a preset lower waiting time LT, and then having the lifter 4 raise the substrate W, and having the lifter 4 wait at the upper position H2 to which the substrate W was raised for a preset upper waiting time UT. The lower waiting time LT is set to be longer than the upper waiting time UT. When the supply of the mist-like water repellent agent is to be stopped, the on-off valves V3 and V5 are closed.

[0095] According to this embodiment, since the water repellent agent is supplied in the form of a mist, it is possible to make the water repellent agent adhere to the substrate W more easily than with solvent vapor. Therefore, the water repellent agent can be efficiently adhered to the substrate W. Furthermore, when the substrate W is raised and lowered while the water repellent agent is being supplied in the form of a mist, the lower waiting time LT is made longer than the upper waiting time UT. This allows a larger amount of water repellent agent to adhere to the substrate W.

[0096] Also, the solvent and the water repellent can be selectively sprayed from the mist nozzles 29, 30 of the solvent supply unit 19. For example, as shown in FIG. 1, two solvent supply units 19 and two water repellent vapor nozzles 17 may be disposed at different heights. If the substrate W passes between the two solvent supply units 19 while the solvent is being sprayed, and if the substrate W passes between the two water repellent vapor nozzles 17 while the water repellent is being sprayed, the distance the substrate W moves up and down may become long. Therefore, the height of the chamber 3 may become long. However, this embodiment makes it possible to suppress the height of the chamber 3.

[0097] The present invention is not limited to the above-described embodiment, but can be modified as follows.

[0098] (1) In step S08 of the first embodiment described above, when the IPA mist is being supplied (second solvent supplying operation), the substrate W is located at the upper position H2 and is not raised or lowered. In this regard, when the IPA mist is being supplied, the lifter 4 may lower the substrate W to the lower position H3 and then raise the substrate W (second substrate lifting and lowering operation).

[0099] 5. That is, the second substrate lifting operation may be performed by having the lifter 4 lower the substrate W to the lower position H3 in the processing tank 2 while the mist-like IPA is being supplied, and having the lifter 4 wait at the lower position H3 for a preset lower waiting time LT, and then having the lifter 4 raise the substrate W and have the lifter 4 wait at the upper position H2 to which the substrate W was raised for a preset upper waiting time UT. The lower waiting time LT is set to be longer than the upper waiting time UT.

[0100] For example, when a mist-like solvent is supplied, the substrate W is raised and lowered to suppress uneven adhesion of the solvent. At this time, the lower waiting time LT during which the substrate W waits at the lower position H3 in the processing tank 2 is set longer than the upper waiting time UT during which the substrate W waits at the upper position H2 to which the substrate W has been raised. This is because, for example, when a mist-like solvent is supplied, the amount of solvent adhering to the substrate W is greater when the substrate W is disposed at the lower position H3 in the processing tank 2 than when the substrate W is disposed at the upper position H2 above the processing tank 2 in the chamber 3. This allows the solvent to be more efficiently adhered to the substrate W. That is, the amount of solvent consumed can be reduced and the processing time can be shortened. The lower waiting time LT in step S08 corresponds to the second lower waiting time of the present invention. The upper waiting time UT in step S08 corresponds to the second upper waiting time of the present invention.

[0101] (2) In step S13 in each of the above-described embodiments and modified example (1), when the mist-like IPA is being supplied, the substrate W is located at the upper position H2 and is not raised or lowered. In this regard, step S13 may be performed as in steps S03 to S06 shown in Fig. 3 and Fig. 5. In this case, the substrate raising and lowering operation may be performed once or a plurality of times.

[0102] (3) In each of the above-described embodiments and modifications, the two solvent supply units 19 shown in FIG. 2 are provided with mist nozzles 29 and 30. In this regard, the two solvent supply units 19 may be provided with a plurality of shower heads (shower nozzles) that supply droplets of the solvent (e.g., IPA) instead of the mist nozzles 29 and 30. Each shower head does not discharge a continuous linear solvent, but discharges droplets. A shower head is also called a one-fluid nozzle. Each solvent supply unit 19 may be configured to supply at least one of the solvent in the form of a mist and droplets.

[0103] (4) In the above-mentioned embodiments and modified examples (1) and (2), the mist nozzles 29 and 30 of the two solvent supply units 19 are configured as two-fluid nozzles. In this regard, the mist nozzles 29 and 30 may be configured as one-fluid nozzles. A one-fluid nozzle is a nozzle that turns a liquid into a mist by the pressure of the liquid without using gas.

[0104] (5) In each of the above-described embodiments and modifications, in the three substrate lifting and lowering operations in FIG. 5, the substrate W is lifted to the upper position H2, and then the substrate W is made to wait at the upper position H2. The height position at which the substrate W is made to wait on the upper side does not have to coincide with the upper position H2. The position at which the substrate W is made to wait on the upper side may be, for example, position H2A near the upper position H2, as shown in FIG. 5. Furthermore, the position at which the substrate W is made to wait on the upper side may be a height position at which the lower end of the substrate W fits into the processing tank 2. The upper position H2 or position H2A corresponds to the position at which the substrate is lifted in the present invention.

[0105] (6) In each of the above-described embodiments and modifications, in the three substrate lifting and lowering operations in Fig. 5, the substrate W is raised to the lower position H3 and then made to wait at the lower position H3. The height position at which the substrate W is made to wait on the lower side does not have to coincide with the lower position H3. The position at which the substrate W is made to wait on the lower side may be, for example, position H3A near position H3, as shown in Fig. 5. The lower position H3 or position H3A corresponds to a position in the processing tank of the present invention.

[0106] (7) In each of the above-mentioned embodiments and modifications, the substrate processing apparatus 1 includes a QDR valve 11 that discharges a processing liquid (e.g., pure water) from the processing tank 2. In this regard, the substrate processing apparatus 1 may include a discharge pipe extending from the processing tank 2 to the outside of the chamber 3, and an on-off valve provided on the discharge pipe. By opening the on-off valve, the processing liquid may be directly discharged from the processing tank 2 to the outside of the chamber 3 without being stored at the bottom of the chamber.

[0107] (8) In each of the above-described embodiments and modifications, the QDR valve 11 is closed in step S06. In this regard, if a relationship is established in which the amount of IPA adhering to the substrate W is greater when the substrate W is disposed at the lower position H3 than when the substrate W is disposed at the upper position H2, the QDR valve 11 may be open.

[0108] (9) In the above-described first and second embodiments and each modified example, the two water repellent vapor nozzles 17 supply water repellent vapor into the chamber 3. Two nozzle rows may be provided instead of the two water repellent vapor nozzles 17. Each of the two nozzle rows includes a plurality of mist nozzles arranged in the Y direction. The mist nozzles of the two nozzle rows supply the water repellent vapor in a mist form into the chamber 3. [Explanation of symbols]

[0109] 1 ... Substrate processing equipment 2 … Treatment tank 2A…Aperture 3 … Chamber 4 … Lifter 11 … QDR valve 17 ... Water repellent steam nozzle 43 ... Pressure reducing pump 61 ... Control section H2…Top position H3…lower position V1~V7 … Opening and closing valves

Claims

1. In a substrate processing apparatus for processing a substrate, a processing tank for storing a processing liquid; a chamber housing the treatment vessel; a decompression pump for reducing the pressure inside the chamber; a lifter that holds a substrate and raises and lowers the substrate within the chamber; an on-off valve for discharging the treatment liquid from the treatment tank; a solvent supply unit provided in the chamber, the solvent supply unit being disposed at a position higher than an opening formed on an upper surface of the treatment tank, and supplying at least one of the solvent in a mist form and droplet form from the outside of the treatment tank toward the inside of the treatment tank in a plan view; A control unit, the control unit performs a solvent supply operation to cause the pressure reducing pump to reduce the pressure in the chamber while the substrate is immersed in the processing liquid and to cause the solvent supply unit to supply at least one of the solvent in a mist form and droplet form; the control unit controls the lifter to remove the substrate from the processing liquid in the processing tank when the pressure in the chamber is reduced and the solvent is being supplied, and then opens the on-off valve to discharge the processing liquid from the processing tank; The control unit, when in the solvent supply state, causes the lifter to lower the substrate to a position within the processing tank where the processing liquid is not stored, and then performs a substrate lifting operation to raise the substrate to the lifter.

2. 2. The substrate processing apparatus according to claim 1, The substrate lifting operation includes, in the solvent supply state, having the lifter lower the substrate to a position in the processing tank, having the lifter wait for a preset lower standby time at the position in the processing tank, and then having the lifter lift the substrate, and having the lifter wait for a preset upper standby time at the position where the substrate was lifted, The substrate processing apparatus according to claim 1, wherein the lower standby time is longer than the upper standby time.

3. 3. The substrate processing apparatus according to claim 2, The substrate processing apparatus is characterized in that the substrate lifting and lowering operation is performed a plurality of times.

4. 4. The substrate processing apparatus according to claim 1, a water repellent nozzle for supplying water repellent vapor into the chamber; The substrate processing apparatus according to claim 1, wherein the control unit supplies the water repellent vapor to the substrate from the water repellent nozzle after the substrate lifting / lowering operation has been performed and after the supply of the solvent has been stopped.

5. 5. The substrate processing apparatus according to claim 4, The control unit, after stopping the supply of the water repellent vapor, performs a second solvent supply operation to cause the vacuum pump to reduce the pressure inside the chamber and to supply at least one of the solvent in a mist form and droplet form from the solvent supply unit.

6. 6. The substrate processing apparatus according to claim 5, 2. The substrate processing apparatus according to claim 1, wherein the second solvent supplying operation is performed when the lifter keeps the substrate waiting at a position in the processing bath where the processing liquid is not stored.

7. 6. The substrate processing apparatus according to claim 5, the control unit, when the second solvent supplying operation is being performed, causes the lifter to lower the substrate to a position in the processing tank, causes the lifter to wait at the position in the processing tank for a preset second lower waiting time, thereafter causes the lifter to lift the substrate, and causes the lifter to wait at the position to which the substrate was lifted for a preset second upper waiting time; The substrate processing apparatus according to claim 1, wherein the second lower waiting time is longer than the second upper waiting time.

8. a processing tank for storing a processing liquid; a chamber housing the treatment vessel; a decompression pump for reducing the pressure inside the chamber; a lifter that holds a substrate and raises and lowers the substrate within the chamber; an on-off valve for discharging the treatment liquid from the treatment tank; A substrate processing method for a substrate processing apparatus comprising: a solvent supplying step of reducing the pressure in the chamber by the vacuum pump while the substrate is immersed in the treatment liquid and supplying at least one of a mist form and droplet form of the solvent from a solvent supplying unit; a substrate removal step of removing the substrate from the processing solution in the processing tank by the lifter while the pressure inside the chamber is reduced and the solvent is being supplied; a processing solution discharge step of discharging the processing solution from the processing tank by opening the on-off valve while in the solvent supply state and after the substrate removal step is performed; a substrate lifting process in which, in the solvent supply state, the lifter lowers the substrate to a position in the processing tank where the processing liquid is not stored, and then the lifter lifts the substrate; The solvent supply unit is provided within the chamber, A substrate processing method characterized in that the solvent supply unit is positioned at a position higher than an opening formed in an upper surface of the processing tank, and supplies the solvent in at least one of a mist form and a droplet form from the outside of the processing tank toward the inside of the processing tank when viewed in a plane.

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