High-pressure gaseous hydrogen oxide providing device, and high-pressure substrate processing apparatus and method using the same

Abstract

To provide a high-pressure gaseous hydrogen oxide providing device, and a high-pressure substrate processing apparatus and method using the same.SOLUTION: A high-pressure substrate processing method includes the steps of: reacting a hydrogen gas and an oxygen gas; obtaining a generated hydrogen oxide having a first pressure; converting the generated hydrogen oxide into a processed gaseous hydrogen oxide having a second pressure higher than the first pressure and an atmospheric pressure; and allowing the processed gaseous hydrogen oxide to act on a substrate to be processed in a processing chamber. The step of converting the generated hydrogen oxide into the processed gaseous hydrogen oxide having the second pressure higher than the first pressure and the atmospheric pressure includes a step of injecting an auxiliary gas into the processing chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber reaches the second pressure.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present invention relates to a high pressure substrate processing apparatus and method, and a high pressure gas phase hydrogen oxide providing device for use therein. [Background technology]

[0002] In general, various processes are performed on a semiconductor substrate during the manufacturing process of a semiconductor device, such as oxidation, nitridation, ion implantation, deposition, etc. Hydrogen or deuterium heat treatment is also used to improve interface characteristics of the semiconductor device.

[0003] The manufacturing process is roughly divided into a vacuum process and a high pressure process according to the gas pressure acting on the substrate, the former having a pressure lower than the atmospheric pressure, and the latter having a pressure higher than the atmospheric pressure.

[0004] Since the two processes have different characteristics and features, what is not a problem in one process may cause a big problem in the other. For example, when using water vapor in wet oxidation, impurities can be a big problem in the high pressure process, unlike the vacuum process.

[0005] The above-mentioned background art is technical information that the inventor possesses in order to derive the embodiments of the present invention or that he / she acquired in the process of deriving the embodiments of the present invention, and is not necessarily publicly known art that was disclosed to the general public prior to the filing of this application. Summary of the Invention [Problem to be solved by the invention]

[0006] One object of the present invention is to provide a high-pressure gas-phase hydrogen oxide providing device that can effectively remove impurities in a process using high-pressure gas-phase hydrogen oxide, thereby preventing quality defects of substrates processed by the corresponding process, and a high-pressure substrate processing apparatus and method using the same.

[0007] Another object of the present invention is to provide a high-pressure gaseous hydrogen oxidizer providing device that can prevent the generation of unreacted gas during the generation of high-pressure gaseous hydrogen oxidizer or remove the unreacted gas that is generated, thereby preventing the risk of explosion, and a high-pressure substrate processing apparatus and method using the same. [Means for solving the problem]

[0008] To achieve the above object, a high-pressure substrate processing method according to one aspect of the present invention may include a step of reacting hydrogen gas and oxygen gas, obtaining a generated hydrogen oxide having a first pressure, converting the generated hydrogen oxide into treated vapor-phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure, and acting on a substrate to be processed in a processing chamber with the treated vapor-phase hydrogen oxide.

[0009] Here, the step of converting the generated hydrogen oxide into treated gas-phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure may include injecting an auxiliary gas into the treatment chamber in addition to the gas-phase hydrogen oxide obtained from the generated hydrogen oxidizer so that the gas-phase hydrogen oxidizer obtained from the generated hydrogen oxidizer in the treatment chamber reaches the second pressure.

[0010] Here, the step of converting the generated hydrogen oxide into treated gas-phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure may include the steps of obtaining liquid-phase hydrogen oxide from the generated hydrogen oxide, pressurizing the liquid-phase hydrogen oxide, and vaporizing the pressurized liquid-phase hydrogen oxide to obtain the treated gas-phase hydrogen oxide.

[0011] According to another aspect of the present invention, a high-pressure substrate processing apparatus may include an inner chamber formed to accommodate a process gas containing a process gas-phase hydrogen oxide and having a process pressure higher than atmospheric pressure, and a substrate to be processed with the process gas; an outer chamber formed to accommodate the inner chamber and to accommodate a protective gas having a protective pressure set in relation to the process pressure; a generation module formed to react hydrogen gas with oxygen gas to generate a generated hydrogen oxide having a generated pressure lower than the process pressure; and a conversion module formed to pressurize the generated hydrogen oxide and convert it into the processed gas-phase hydrogen oxide having the process pressure.

[0012] Here, the conversion module may include an auxiliary gas line formed to inject an auxiliary gas into the internal chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the internal chamber reaches the treatment pressure.

[0013] Here, the conversion module may include a vaporization heater configured to vaporize liquid-phase hydrogen oxide obtained from the generated hydrogen oxide to generate the treated gas-phase hydrogen oxide.

[0014] Here, either the generation module or the conversion module may further include a water tank configured to accommodate liquid-phase hydrogen oxide obtained from the generated hydrogen oxide and in communication with the vaporization heater.

[0015] Here, the conversion module may further include a pump disposed between the water tank and the heater and configured to pressurize and pump liquid-phase hydrogen oxide obtained from the generated hydrogen oxide toward the internal chamber.

[0016] Here, the conversion module may further include an exhaust line configured to exhaust unreacted gas from the water tank, which is one of the hydrogen gas and the oxygen gas and has not participated in the reaction, and an injection line configured to inject a purge gas into the water tank to purge the unreacted gas.

[0017] Here, the method further includes a heating module disposed in the outer chamber to heat the process gas to a process temperature, and the vaporization heater is disposed in the outer chamber.

[0018] According to another aspect of the present invention, a high-pressure gas-phase hydrogen oxide providing device for a high-pressure substrate processing apparatus includes a generation module configured to react hydrogen gas and oxygen gas to generate generated hydrogen oxide having a generation pressure lower than a processing pressure for processing a substrate to be processed in the high-pressure substrate processing apparatus, and a conversion module configured to pressurize the generated hydrogen oxide and convert it into processed gas-phase hydrogen oxide having the processing pressure, wherein the processing pressure may be higher than atmospheric pressure.

[0019] Here, the conversion module may include an auxiliary gas line formed by injecting an auxiliary gas in addition to the gas-phase hydrogen oxide obtained from the produced hydrogen oxide into a processing chamber in which the substrate to be processed is placed in the high-pressure substrate processing apparatus, so that the gas-phase hydrogen oxide obtained from the produced hydrogen oxide in the processing chamber reaches the processing pressure.

[0020] Here, the conversion module may include a vaporization heater configured to vaporize liquid-phase hydrogen oxide obtained from the generated hydrogen oxide to generate the treated gas-phase hydrogen oxide.

[0021] Here, either the generation module or the conversion module may further include a water tank configured to accommodate liquid-phase hydrogen oxide obtained from the generated hydrogen oxide and in communication with the vaporization heater.

[0022] Here, the conversion module may further include a pump disposed between the water tank and the vaporization heater and configured to pressurize and pump the liquid-phase hydrogen oxide obtained from the generated hydrogen oxide toward the internal chamber. Effect of the Invention

[0023] According to the high pressure gas phase hydrogen oxide providing device and high pressure substrate processing apparatus and method using the same according to the present invention, hydrogen gas and oxygen gas are reacted to obtain generated hydrogen oxide having a first pressure, and the generated hydrogen oxide is then converted into processed gas phase hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure, and is then applied to the substrate to be processed in the processing chamber, thereby eliminating the risk of impurities such as silica contaminating the substrate during the high pressure process.

[0024] In addition, in the process of obtaining treated gas phase hydrogen oxide, unreacted gas that has not participated in the reaction between hydrogen gas and oxygen gas is not generated, or if generated, it is removed, thereby preventing the risk of explosion due to unreacted gas during the process. [Brief description of the drawings]

[0025] [Figure 1] 1 is a conceptual diagram of a high-pressure substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] 2 is a block diagram for explaining a control configuration of the high-voltage substrate processing apparatus of FIG. 1. FIG. [Diagram 3] FIG. 3 is a conceptual diagram showing the generation module of FIG. 2. [Figure 4] FIG. 13 is a conceptual diagram illustrating a generation module and a conversion module according to another embodiment of the present invention. [Diagram 5] FIG. 5 is a cross-sectional view showing the water tank of FIG. [Figure 6] 13 is a conceptual diagram illustrating a generation module and a conversion module according to still another embodiment of the present invention. [Figure 7] 4 is a flowchart illustrating a high pressure substrate processing method according to still another embodiment of the present invention. [Figure 8] 7 is a flowchart illustrating a specific processing example related to one step of FIG. 6; [Figure 9] 7 is a flowchart illustrating another specific example of a process associated with a step of FIG. 6; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0027] The present invention is not limited to the embodiments disclosed below, but may be modified in various ways and may be realized in various different forms. However, the present embodiments are provided to complete the disclosure of the present invention and to fully inform those skilled in the art of the scope of the invention. Therefore, the present invention is not limited to the embodiments disclosed below, but should be understood to include all modifications, equivalents, or alternatives within the technical spirit and scope of the present invention, as well as the substitution or addition of the configuration of any one embodiment and the configuration of another embodiment.

[0028] The accompanying drawings are merely for the purpose of making the embodiments disclosed in this specification easily understandable, and the accompanying drawings should not be construed as limiting the technical ideas disclosed in this specification, but should be understood as including all modifications, equivalents, or alternatives included in the idea and technical scope of the present invention. In the drawings, the size and thickness of components may be exaggerated or enlarged for ease of understanding, but the scope of protection of the present invention should not be interpreted as being limited thereby.

[0029] The terms used in this specification are merely used to describe specific implementations and embodiments, and are not intended to limit the present invention. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise. In the specification, terms such as "includes", "comprises", and the like are intended to specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification. In other words, in the specification, terms such as "includes", "comprises", and the like are to be understood as not precluding the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0030] Terms including ordinal numbers such as first, second, etc. may be used to describe various components, but the components are not limited by the terms. The terms are used only to distinguish one component from another.

[0031] When a component is referred to as being "coupled / in communication" or "connected" to another component, it should be understood that although it may be directly coupled / in communication or connected to the other component, there may be other components in between. In contrast, when a component is referred to as being "directly coupled / in communication" or "directly connected" to another component, it should be understood that there are no other components in between.

[0032] When an element is referred to as being "on top" or "on bottom" of another element, it should be understood that it is not only located directly on top of the other element, but that there may be other elements in between.

[0033] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which the present invention belongs. Terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted as having an idealized or overly formal meaning unless expressly defined in this application.

[0034] FIG. 1 is a conceptual diagram of a high-pressure substrate processing apparatus according to one embodiment of the present invention.

[0035] Referring to the figure, a high pressure substrate processing apparatus 100 may include an inner chamber 110 , an outer chamber 120 , an intake module 130 , and an exhaust module 140 .

[0036] The inner chamber 110 forms a processing chamber that accommodates a substrate for processing. The inner chamber 110 may be made of a non-metallic material, for example, quartz, to reduce contamination in a high-temperature and high-pressure working environment. Although simplified in the drawing, an inner door (not shown) for opening the processing chamber is provided at the lower end of the inner chamber 110. The processing chamber is opened by lowering the inner door, and the substrate can be inserted into the processing chamber. The temperature of the inner chamber 110 can reach several hundred to several thousand degrees Celsius by operating a heater (not shown) disposed outside the inner chamber 110. The substrate may be, for example, a wafer for semiconductor manufacturing. The wafer may be made of, for example, Si, SiC, GaN, or the like. The substrate is not limited to the wafer, and may be other base structures for making circuits. For example, the substrate may include glass for display manufacturing. The holder may be a boat on which substrates to be processed can be stacked in multiple layers.

[0037] The outer chamber 120 is disposed to accommodate the inner chamber 110. Unlike the inner chamber 110, the outer chamber 120 may be made of a metal material since there is no risk of contamination of the substrate. The outer chamber 120 has a hollow shape having an accommodation space for accommodating the inner chamber 110. The outer chamber 120 also has an outer door (not shown) at the bottom, and the outer door can be lowered together with the inner door to open the accommodation space. The inner chamber 110 can be installed in the outer chamber 120.

[0038] The gas supply module 130 is configured to supply gas to the inner chamber 110 and the outer chamber 120. The gas supply module 130 has a gas supplier 131 that communicates with a utility (gas supply facility) of a substrate processing factory. The gas supplier 131 supplies, for example, hydrogen gas (H 2 ), deuterium gas (D 2 ), gaseous hydrogen oxide, fluorine gas (F 2 ), ammonia gas (NH 3 ), chlorine gas (Cl 2 ), nitrogen gas (N 2 ), etc. The gas phase hydrogen oxide can be used for wet oxidation, atomic layer deposition (ALD), chemical vapor deposition (CVD), annealing, etc. The gas supplier 131 can supply the outer chamber 120 with a protective gas, for example, nitrogen gas or argon gas (Ar), which is an inert gas, as a protective gas. The processing gas and the protective gas may be simply called a process gas. The processing gas is supplied to the inner chamber 110 or the outer chamber 120 through a processing gas line 133 or a protective gas line 135. The protective gas supplied to the outer chamber 120 is specifically supplied to the remaining space (protection space) of the outer chamber 120 excluding the space occupied by the inner chamber 110.

[0039] The process gas is supplied to the chambers 110 and 120 at a pressure (high pressure) higher than atmospheric pressure, for example, at a pressure of several atmospheres to several tens of atmospheres. The process pressure, which is the pressure of the process gas, and the protective pressure, which is the pressure of the protective gas, may be maintained in a set relationship. For example, the protective pressure may be set to be approximately the same as the process pressure or slightly higher. This pressure relationship provides the advantage of preventing the process gas from leaking from the inner chamber 110 and preventing the inner chamber 110 from cracking. The protective pressure may be set to be slightly lower than the process pressure, and in that case, a similar effect to that described above may be achieved.

[0040] The exhaust module 140 is configured to exhaust the process gas. An exhaust pipe 141 is connected to the upper part of the inner chamber 110 to exhaust the process gas from the inner chamber 110. An exhaust pipe 145 is also connected to the outer chamber 120 to exhaust the protective gas from the outer chamber 120. Since the exhaust pipes 141 and 145 are integrated, the process gas is diluted by the protective gas during the exhaust process, and the concentration of the process gas is reduced.

[0041] The control configuration of the high-voltage substrate processing apparatus 100 will be described with reference to Fig. 2. Fig. 2 is a block diagram for explaining the control configuration of the high-voltage substrate processing apparatus of Fig. 1.

[0042] Referring to this drawing (and FIG. 1), the high pressure substrate processing apparatus 100 may further include, in addition to the aforementioned supply module 130 and exhaust module 140, a heating module 150, a generation module 160, a conversion module 170, a sensing module 180, a control module 190, and a storage module 195.

[0043] The heating module 150 includes the heater described above. The heater may be disposed within the outer chamber 120 so as to face the inner chamber 110.

[0044] The generation module 160 is configured to generate hydrogen oxide. Hydrogen oxide is a molecule formed by combining oxygen and hydrogen, and is expressed as H 2 O, H 2 O 2 , H 2 O 3 etc. The hydrogen oxide may be called generated hydrogen oxide since it is generated by the generation module 160. The generated hydrogen oxide may be gaseous hydrogen oxide in a gaseous state or liquid phase hydrogen oxide in a liquid state. The former may be called generated gaseous hydrogen oxide and the latter may be called generated liquid hydrogen oxide. The generated hydrogen oxide has a generation pressure. The generation pressure may be equal to or higher than atmospheric pressure, specifically, several to several tens of atmospheres. The generation pressure may be lower than the treatment pressure.

[0045] The conversion module 170 is configured to convert the generated hydrogen oxide into gas phase hydrogen oxide (processing gas phase hydrogen oxide) that acts on the substrate in the process chamber. To this end, the conversion module 170 can pressurize the generated hydrogen oxide so that the generated pressure is higher than the process pressure.

[0046] The conversion module 170 and the generation module 160 may be referred to as a high pressure gas phase hydrogen oxidizer providing device since they work cooperatively to provide high pressure gas phase hydrogen oxidizer (the treated gas phase hydrogen oxidizer) to the process chamber. The high pressure gas phase hydrogen oxidizer providing device may also work in conjunction with the air supply module 130. Specifically, the high pressure gas phase hydrogen oxidizer providing device may be installed in the process gas line 133 or may be installed so as to be in communication with the process gas line 133.

[0047] The sensing module 180 is configured to sense the environment of the chambers 110, 120. The sensing module 180 includes a pressure gauge 181 and a temperature gauge 185. The pressure gauge 181 and the temperature gauge 185 may be installed for each of the chambers 110, 120. The sensing module 180 may also include a gas sensor (not shown) for sensing a specific gas.

[0048] The control module 190 is configured to control the air intake module 130 and the exhaust module 140. The control module 190 can control the operation of the air intake module 130 and the like based on the detection result of the detection module 180.

[0049] The storage module 195 is configured to store data, programs, etc. that the control module 190 can refer to for control purposes.

[0050] According to this configuration, the control module 190 can control the operation of the gas supply module 130 and the high pressure gas phase hydrogen oxidizer providing device based on the pressure of the chambers 110, 120 obtained by the pressure gauge 181. By the operation of the gas supply module 130 and the high pressure gas phase hydrogen oxidizer providing device, the processing gas can be filled into the processing chamber at the processing pressure. The protection space can be filled with the protective gas at the protection pressure.

[0051] The control module 190 can also control the operation of the exhaust module 140 based on the pressure in the chambers 110, 120 obtained by the pressure gauge 181. The operation of the exhaust module 140 exhausts the process gas from the process chamber and the protective gas from the protective space.

[0052] The control module 190 can control the operation of the heating module 150 based on the temperature of the chambers 110, 120 obtained by the temperature gauge 185. The operation of the heating module 150 can allow the process gas to reach a process temperature for processing the substrate.

[0053] The detailed configurations of the generation module 160 and the conversion module 170 will be described with reference to FIGS. 3 to 6. Hereinafter, for the convenience of description, H 2 I will explain using O as an example, but such an explanation is not H 2 O 2 The same can be applied to the above H 2 The gaseous state of O is water vapor, and the liquid state is water. Therefore, the produced gas phase hydrogen oxide is called generated vapor, and the produced liquid phase hydrogen oxide is called generated water.

[0054] First, FIG. 3 is a conceptual diagram showing the generation module of FIG.

[0055] Referring to this drawing, the generation module 160 is configured to generate gaseous hydrogen oxide (water vapor) using gas as a starting material. The method using gas is different from the method of obtaining water vapor using liquid phase hydrogen oxide (water) as a starting material. The inventors have found that by adopting the method using gas, the generated H 2 It was confirmed that O does not contain impurities (silica).

[0056] The generation module 160 may specifically include a case 161 , input sections 162 and 163 , a reaction section 165 , a sensing section 166 , an ejection section 167 , and a guide line 169 .

[0057] The case 161 has an internal space that houses the reaction unit 165, which will be described later. The case 161 may be manufactured in a sealed form to prevent gas leakage. Gas leaking from the reaction unit 165, etc. in the case 161 is detected by a detector (not shown) and is pumped to the outside of the case 161 and exhausted. The internal space of the case 161 may be filled with an inert gas, for example, nitrogen gas, or purged with nitrogen gas.

[0058] The input units 162 and 163 are configured to receive gas from the gas supply unit 131 (see FIG. 1). Oxygen gas (O2) is input to one of the input units 162 and 163, and hydrogen gas (H2) is input to the other input unit 163. If necessary, other substances besides the oxygen gas and the hydrogen gas may be additionally input to the input units 162 and 163. A line for supplying the hydrogen gas to the other input unit 163 may be formed of a double pipe. The hydrogen gas flows through an inner pipe of the double pipe, and a detector (not shown) for detecting leakage of the hydrogen gas may be installed in an outer pipe. When leakage of the hydrogen gas occurs, the hydrogen gas may be exhausted from the inner space of the outer pipe. The hydrogen gas exhaust facility is filled with, for example, an inert gas for explosion prevention. The leakage of the hydrogen gas may be linked to an interlock of the high pressure substrate processing apparatus 100.

[0059] The reaction section 165 reacts with the generated H 2 The oxygen gas and the hydrogen gas are reacted to produce O. The reaction section 165 can maintain a temperature and pressure suitable for the reaction.

[0060] The sensing unit 166 detects the generated H 2 The sensing unit 166 is configured to obtain information related to O. The sensing unit 166 may be configured to sense, for example, the temperature and pressure of the generated hydrogen oxide. The sensing unit 166 can also sense unreacted gas (NG, see FIG. 5). Unreacted gas (NG) refers to gas that has not participated in the reaction between the oxygen gas and the hydrogen gas. Hydrogen gas as unreacted gas (NG) is explosive and therefore needs to be managed.

[0061] The discharge part 167 is configured to discharge the discharged material. The inventors of the present invention found that when the pressure is less than the reference pressure, the discharged material is mainly the generated H 2 The inventors have also confirmed that the discharged material may contain a small amount of unreacted gas (NG) at pressures above the reference pressure. The reference pressure may be several atmospheres. The discharged material may contain the generated H 2The generated H may be a mixture of O and unreacted gas (NG). 2 Depending on the phase of O, the exhaled material may be gas or a mixture of gas and liquid.

[0062] The guide line 169 is 2 The guide line 169 is configured to guide O into the inner chamber 110. The guide line 169 can be the above-mentioned process gas line 133 (see FIG. 1) or can form a part thereof.

[0063] When only gas (exhaust gas) is discharged as the discharge product, the conversion module 170 (see FIG. 2) has an auxiliary gas line (not shown) for injecting auxiliary gas into the inner chamber 110. The auxiliary gas is the product H 2 O, which is injected into the inner chamber 110 to increase the pressure of the generated water vapor, may constitute a part of the process gas. The auxiliary gas may be, for example, an inert gas such as nitrogen gas.

[0064] The auxiliary gas line receives the auxiliary gas from a gas supplier 131 (see FIG. 1). The auxiliary gas line is connected to a guide line 169 at the rear end of the case 161, and can supply the auxiliary gas to the inner chamber 110 through the guide line 169. In an alternative embodiment, the auxiliary gas line is connected to a gas supply line 169 through which the auxiliary gas is supplied to the oxygen gas, the hydrogen gas, or the generated H gas in the case 161. 2 It can also be configured to be mixed with O.

[0065] According to this configuration, when the generating module 160 operates below the reference pressure, it discharges an output consisting essentially of the generated water vapor with almost no unreacted gas (NG). Since there is no need to worry about unreacted gas (NG) in such an output, the generated water vapor can be directly supplied to the inner chamber 110 without any additional processing. However, since the generating pressure is lower than the processing pressure, the auxiliary gas can pressurize the generated water vapor to convert it into the processed water vapor.

[0066] In an alternative embodiment, the product water vapor (with little or no unreacted gas (NG)) can be compressed by a compressor (not shown) before being injected into the inner chamber 110. In that case, the product water vapor is pressurized at the process pressure to become the process water vapor. The process water vapor can act on the substrate at the process pressure without the aid of the auxiliary gas.

[0067] Differently from the above, when the generating module 160 operates at or above the reference pressure, the discharged product is the generated H 2 Unreacted gas (NG) may be included together with O. In this case, removal of the unreacted gas (NG) is necessary, and a new type of conversion module 170A can be used for this purpose.

[0068] 4 is a block diagram showing a generating module and a converting module according to another embodiment of the present invention. In this figure, the generating module 160 is the same as in the previous embodiment, so it is simply represented by a box in the figure.

[0069] With further reference to the drawing, the conversion module 170A converts the generated H 2 The conversion module 170A is configured to convert O into the treated water vapor and remove unreacted gas (NG) during the conversion. 2 A configuration in which O (specifically, the generated water vapor) is subjected to a phase change can be employed.

[0070] Conversion module 170A may include a water tank 171, a pump 175, and an evaporative heater 179.

[0071] The water tank 171 is configured to accommodate the resultant product of liquefying the discharged material. When the water tank 171 is in a room temperature environment, the discharged material can be liquefied in the water tank 171 without a separate cooling device. The resultant product includes condensed water (CW, see FIG. 5) generated by liquefying the generated water vapor. The condensed water (condensed liquid phase hydrogen oxide) is mixed with the generated water (generated liquid phase hydrogen oxide) and the generated H 2 The water obtained from O (produced hydrogen oxide) may be called liquid hydrogen oxide. The resultant may further include unreacted gas (NG). A specific configuration of the water tank 171 will be described with reference to FIG. 5.

[0072] Referring again to the drawing, the pump 175 is configured to pump the condensed water (CW). The condensed water (CW) can be pumped toward the processing chamber. The condensed water (CW) can also be pressurized by several or several tens of atmospheres and pumped. The pump 175 can be disposed between the water tank 171 and the vaporization heater 179.

[0073] The vaporization heater 179 is configured to vaporize the condensed water (CW) to generate water vapor (obtained water vapor). To this end, the vaporization heater 179 heats the condensed water (CW). The obtained water vapor is supplied to the processing chamber along a guide line 169 to become the processed water vapor. The obtained water vapor may be additionally pressurized or mixed with the auxiliary gas to become the processed water vapor. The obtained water vapor, together with the generated water vapor, is mixed with the generated H 2 It may also be called water vapor (gas-phase hydrogen oxide) obtained from O (produced hydrogen oxide).

[0074] The vaporization heater 179 may be disposed outside the outer chamber 120 (see FIG. 1). In an alternative embodiment, the vaporization heater 179 may be located inside the outer chamber 120, i.e., in the protected space. In that case, the vaporization heater 179 is placed in an environment with a higher temperature than the outside of the outer chamber 120, and therefore can consume less energy to operate. In another alternative embodiment, the vaporization heater 179 is installed in the main body (e.g., the internal door) of the inner chamber 110, and the condensed water (CW) may be vaporized by the vaporization heater 179 while flowing through the main body to the processing chamber.

[0075] FIG. 5 is a cross-sectional view showing the water tank of FIG.

[0076] Referring to this drawing, a water tank 171 may have a housing 172 that defines an internal space. The discharged material is liquefied and separated into condensed water (CW) and unreacted gas (NG), which are stored in the internal space. Specifically, the condensed water (CW) may be located at the bottom of the internal space, and the unreacted gas (NG) may be located at the top of the internal space. The unreacted gas (NG) and the condensed water (CW) are separated from each other and therefore occupy different spaces.

[0077] The discharged product may be discharged to the housing 172 via a discharge line 173a. The condensed water (CW) may be sucked into the pump 175 via a suction line 173b. One end of the suction line 173b may be connected to the pump 175, and the other end, a suction port 173b', may be disposed within the condensed water (CW). By disposing the suction port 173b' within the condensed water (CW), the unreacted gas (NG) is prevented from being sucked into the pump 175 via the suction line 173b.

[0078] Condensed water (CW) is supplied to the inner chamber 110 via a pump 175 and a vaporization heater 179, but unreacted gas (NG) is separated from the condensed water (CW) and is not supplied to the inner chamber 110. The unreacted gas (NG) can be discharged to the outside of the inner space via a discharge line 174a.

[0079] In order to more actively separate / remove the unreacted gas (NG) from the condensed water (CW), a purge gas may be injected into the inner space via an injection line 174b. The purge gas purges the unreacted gas (NG) in the inner space, so that the unreacted gas (NG) can be more smoothly discharged via an exhaust line 174a. The purge gas may be, for example, nitrogen gas, which is an inert gas.

[0080] FIG. 6 is a conceptual diagram showing a generating module and a transforming module according to another embodiment of the present invention.

[0081] Referring to this figure, the generating module 160' is generally the same as the generating module 160 (see FIG. 4) described above, but differs in that it includes a water tank 168'. 2 When O is the produced water, the water tank 168' can store the produced water (and the unreacted gas). The water tank 168' has substantially the same configuration as the water tank 171 (see FIG. 5) described above.

[0082] The conversion module 170B is generally the same as the above-described conversion module 170A, but differs in that it does not have the water tank 171.

[0083] According to this configuration, the discharged material contains only the produced water, or the produced water and the unreacted gas. In the water tank 168', the produced water and the unreacted gas are separated as described above. The pump 175 can pressurize and pump the produced water from the water tank 168' to the vaporization heater 179. In the water tank 168', the unreacted gas can also be purged.

[0084] Hereinafter, the high pressure substrate processing method will be described with reference to FIGS. 7 to 9 (and FIGS. 1 to 6).

[0085] FIG. 7 is a flow chart illustrating a high pressure substrate processing method according to still another embodiment of the present invention.

[0086] With further reference to this figure, the control module 190 controls the production module 160 to react hydrogen gas with oxygen gas (S1).

[0087] The generation module 160 discharges a product generated by the reaction of the hydrogen gas and the oxygen gas. The product is a generated H 2 Contains O (S3).

[0088] The control module 190 controls the conversion module 170 to generate the generated H 2 The control module 190 controls the conversion module 170 to convert the generated H into processed steam having a second pressure (processing pressure) (S5). 2 The auxiliary gas can be injected in addition to O (specifically, the generated water vapor). The auxiliary gas, together with the generated water vapor, causes the processing chamber to reach the second pressure (first conversion method). The second pressure is a pressure higher than the first pressure and atmospheric pressure, and can reach, for example, several atmospheres to several tens of atmospheres.

[0089] The processing water vapor acts on the substrate in the processing chamber (S7). By the action of the processing water vapor, wet oxidation, heat treatment, etc. are performed on the substrate.

[0090] FIG. 8 is a flow chart showing a specific example of a process associated with one step of FIG.

[0091]

[0023] Referring further to the drawing, the step of converting into treated steam (S5) is carried out in a manner utilizing a phase change, unlike the previous method.

[0092] Specifically, the discharged gas is liquefied, and condensed water (CW) is obtained in the water tank 171 (S11).

[0093] The control module 190 determines whether or not pressurization of the condensed water (CW) is required (S13). Such a determination varies depending on the pressure of the condensed water (CW).

[0094] The control module 190 controls the pump 175 to pressurize the condensed water (CW) when necessary (S15). The condensed water (CW) is pressurized before it is vaporized.

[0095] The control module 190 also controls the vaporization heater 179 to heat the condensed water (CW) (S17). The heated condensed water (CW) becomes the treated steam having the second pressure (second conversion method).

[0096] In an alternative embodiment, the generated H 2 If O is the product water, the product water that is not the condensation number is pressurized (S13 and S15) and then vaporized (S17).

[0097] FIG. 9 is a flowchart showing another specific example of a process associated with a step of FIG.

[0098] Referring to the drawing, the step of converting to treated steam (S5) may also remove unreacted gas (NG).

[0099] Specifically, when the mixture is contained in the water tank 168', 171, the unreacted gas (NG) is separated from the product water or condensed water (CW) (S21).

[0100] The control module 190 judges whether or not removal of the unreacted gas (NG) is necessary depending on the amount of the unreacted gas (NG) (S23). If the amount of the unreacted gas (NG) is equal to or greater than the aforementioned reference amount, the control module 190 judges that removal of the unreacted gas (NG) is necessary.

[0101] To actively remove the unreacted gas (NG), the control module 190 controls the gas supply module 130 to inject the purge gas into the water tanks 168', 171 (S25). This allows the unreacted gas (NG) to be discharged to the outside from the water tanks 168', 171. As a result, it is possible to ensure that the unreacted gas (NG) is not injected into the processing chamber.

[0102] In the present specification, the high pressure substrate processing apparatus 100 has been described as an example of a processing apparatus having a dual chamber, but the present invention is not limited thereto. The high pressure hydrogen oxide gas providing device can also be applied to a processing apparatus having a single chamber. The single chamber is composed of one housing and one door. A wafer substrate is placed in the chamber, and a processing gas is supplied for processing the wafer substrate.

[0103] The configuration of the high pressure substrate processing apparatus 100 can also be applied to a semi-double chamber, which is an intermediate form between the double chamber and the single chamber. The semi-double chamber has two housings {an inner housing and an outer housing} and one door. The two housings can be combined according to their own shapes or with a separate member interposed to form a closed space (corresponding to the protective space). As in the previous embodiment, the substrate can be placed in the processing chamber of the inner housing and the processing gas can be injected, and the protective gas can be injected into the closed space. Unlike the previous embodiment, the door cannot be completely protected by the protective gas and is exposed to the outside. The door may correspond to the outer door in the previous embodiment. The door can open and close the inner housing (and the outer housing).

[0104] Although a batch type processing apparatus is exemplified in this specification, the present invention is not limited thereto, and the present invention can be applied as is to a single wafer type processing apparatus. [Explanation of symbols]

[0105] 100: High-pressure substrate processing equipment 110: Inner chamber 120: External chamber 130: Air supply module 140: Exhaust module 150: Heating module 160, 160': Generation module 170, 170A, 170B: Conversion module 180: Sensing module 190: Control module

Claims

1. reacting hydrogen gas with oxygen gas; obtaining a product hydrogen oxide having a first pressure; converting the produced hydrogen oxide into treated vapor phase hydrogen oxide having a second pressure greater than the first pressure and atmospheric pressure; and applying the treated gas phase hydrogen oxide to a substrate to be treated in a treatment chamber.

2. converting the generated hydrogen oxide into treated gas phase hydrogen oxide having a second pressure greater than the first pressure and atmospheric pressure, 2. The high pressure substrate processing method of claim 1, further comprising the step of injecting an auxiliary gas into the processing chamber in addition to the gaseous hydrogen oxide obtained from the produced hydrogen oxide so that the gaseous hydrogen oxide obtained from the produced hydrogen oxide in the processing chamber reaches the second pressure.

3. converting the generated hydrogen oxide into treated gas phase hydrogen oxide having a second pressure greater than the first pressure and atmospheric pressure, obtaining liquid phase hydrogen oxide from the generated hydrogen oxide; pressurizing the liquid phase hydrogen oxide; 2. The high pressure substrate processing method of claim 1, further comprising vaporizing the pressurized liquid phase hydrogen oxide to obtain the processed vapor phase hydrogen oxide.

4. an interior chamber configured to contain a process gas having a process pressure greater than atmospheric pressure, the process gas including a process vapor phase hydrogen oxide, and a substrate to be processed by the process gas; an outer chamber containing the inner chamber and configured to contain a protective gas having a protective pressure set relative to the process pressure; a production module configured to react hydrogen gas and oxygen gas to generate a product hydrogen oxide having a production pressure lower than the process pressure; a conversion module configured to pressurize the generated hydrogen oxide to convert it into the process gas phase hydrogen oxide having the process pressure.

5. The conversion module includes:

5. The high pressure substrate processing apparatus of claim 4, further comprising an auxiliary gas line formed for injecting an auxiliary gas into the internal chamber in addition to the gaseous hydrogen oxide obtained from the produced hydrogen oxide so that the gaseous hydrogen oxide obtained from the produced hydrogen oxide in the internal chamber reaches the processing pressure.

6. The conversion module includes: The high pressure substrate processing apparatus of claim 4 further comprising a vaporization heater configured to vaporize liquid phase hydrogen oxide obtained from the product hydrogen oxide to generate the treated gas phase hydrogen oxide.

7. Any one of the generation module and the conversion module is 7. The high pressure substrate processing apparatus of claim 6, further comprising a water tank configured to contain liquid phase hydrogen oxide obtained from the generated hydrogen oxide and in communication with the vaporization heater.

8. The conversion module includes:

8. The high pressure substrate processing apparatus of claim 7, further comprising a pump disposed between the water tank and the vaporization heater, the pump configured to pressure-pump the liquid phase hydrogen oxide obtained from the generated hydrogen oxide toward the internal chamber.

9. The conversion module includes: a discharge line formed to discharge unreacted gas of the hydrogen gas and the oxygen gas that has not participated in the reaction from the water tank; 8. The high pressure substrate processing apparatus of claim 7, further comprising: an injection line configured to inject a purge gas into the water tank for purging the unreacted gas.

10. a heating module disposed within the outer chamber to heat the process gas at a process temperature; The vaporization heater is The high pressure substrate processing apparatus of claim 6 , disposed within the outer chamber.

11. a generation module configured to react hydrogen gas with oxygen gas to generate hydrogen oxide having a generation pressure lower than a processing pressure for processing a substrate to be processed in a high pressure substrate processing apparatus; a conversion module configured to pressurize the produced hydrogen oxide and convert it into treated gas-phase hydrogen oxide having the treatment pressure; The treatment pressure is A high pressure hydrogen oxide vapor providing device for high pressure substrate processing equipment, the pressure of which is greater than atmospheric pressure.

12. The conversion module includes:

12. The high-pressure gaseous hydrogen oxide providing device for a high-pressure substrate processing apparatus as described in claim 11, further comprising an auxiliary gas line formed to inject an auxiliary gas in addition to the gaseous hydrogen oxide obtained from the produced hydrogen oxide into a processing chamber in which the substrate to be processed is placed in the high-pressure substrate processing apparatus, so that the gaseous hydrogen oxide obtained from the produced hydrogen oxide in the processing chamber reaches the processing pressure.

13. The conversion module includes:

12. The high pressure gas phase hydrogen oxide providing device for a high pressure substrate processing apparatus of claim 11, comprising a vaporization heater configured to vaporize liquid phase hydrogen oxide obtained from the generated hydrogen oxide to generate the processed gas phase hydrogen oxide.

14. Any one of the generation module and the conversion module is 14. The high pressure gas phase hydrogen oxide providing device for high pressure substrate processing equipment of claim 13, further comprising a water tank configured to contain liquid phase hydrogen oxide obtained from the generated hydrogen oxide and in communication with the vaporization heater.

15. The conversion module includes:

15. The high pressure gas phase hydrogen oxidizer providing device for a high pressure substrate processing apparatus as described in claim 14, further comprising a pump disposed between the water tank and the vaporization heater and configured to pressurize and pump liquid phase hydrogen oxidizer obtained from the generated hydrogen oxidizer toward the internal chamber.

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