Resin characteristic measuring apparatus and resin characteristic measuring method
The resin property measuring device uses photoluminescence to detect silent changes and contamination in semiconductor encapsulating resins by comparing optical spectrum information from the resin with reference data, addressing the limitations of conventional inspection methods.
Patent Information
- Application Number
- JP2023160221
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-09-25
- Publication Date
- 2025-04-04
- Estimated Expiration
- 2043-09-25
AI Technical Summary
Conventional semiconductor inspection methods and defect detection methods have not been effectively applied to resin property measurements, particularly in detecting silent changes and contamination in semiconductor encapsulating resins.
A resin property measuring device and method utilizing photoluminescence reaction to determine resin properties by irradiating the resin with excitation light, acquiring optical spectrum information from the photoluminescence light, and comparing it with reference resin data to detect differences in resin properties.
Enables the detection of silent changes and contamination in resin materials, allowing for easy distinction between resin types and improving the accuracy of resin property measurements.
Smart Images

Figure 2025051216000001_ABST
Abstract
Description
[Technical field]
[0001] The present invention relates to a resin characteristic measuring device and a resin characteristic measuring method. [Background technology]
[0002] In recent years, there have been reports of problems known as silent changes, whereby parts and material suppliers change the specifications of products and deliver them without the permission of the ordering company (Ministry of Economy, Trade and Industry, "New Product Safety Issues: The Current State of Silent Changes" Homepage address: https: / / www.meti.go.jp / product_safety / producer / point / silent_change.html).
[0003] The above website lists many issues regarding silent changes in resins. For example, resins used in semiconductor devices are very important materials that protect the semiconductor devices from various obstacles such as impact, moisture, heat, and light, and are used as semiconductor encapsulation resins. Silent changes can also occur in semiconductor encapsulation resins. There are also problems such as counterfeit semiconductors or the mixing of materials due to simple work mistakes, but semiconductor encapsulation resins do not change in appearance, so it is not easy to tell if the type has been changed.
[0004] Patent Document 1 discloses a device including an irradiation device including an irradiation unit that irradiates a resin sheet with near-infrared rays, a detection device that acquires a diffuse reflectance spectrum, and a processing device that calculates values obtained by performing processing including averaging, smoothing, normalization, differentiation, scattering correction, baseline correction, peak shift correction, or a combination thereof on the intensity value of reflected light at a plurality of wavelength points or the diffuse reflectance spectrum as a plurality of parameter values corresponding to each wavelength point. Patent Document 1 further discloses a device including a storage unit in which a plurality of regression equations are stored in advance, an analysis unit that applies each of the plurality of regression equations to a plurality of parameter values of the resin layer calculated by the processing device to calculate similarities between the composition of the resin layer and a plurality of candidate compositions, and a determination unit that extracts the similarity closest to the target value from the plurality of similarities and determines the candidate composition corresponding to the regression equation that derived the extracted similarity as the composition of the resin layer.
[0005] Patent Document 2 also describes a method for measuring the composition of a thermosetting resin, which is characterized in that, when molding a thermosetting resin, the resin is injected into only one of two cavities to which a temperature sensor or a calorimeter is attached as a means for measuring the composition ratio in the resin, and the heat generated during curing is measured as the temperature difference or heat difference between the two cavities. Patent Document 2 also describes a method for measuring the composition of a thermosetting resin, in which the molding of the thermosetting resin is semiconductor encapsulation by transfer molding using an epoxy resin, and a platinum resistance wire is used as a temperature sensor.
[0006] Furthermore, Patent Document 3 discloses a method for inspecting the characteristics of a sealing resin, in which a flow path for molten sealing resin is provided in a mold made of wear-resistant metal, a test piece is placed in a position in contact with the flow path, and the degree of wear of the test piece is measured according to the type of sealing resin flowing through the flow path, thereby enabling the characteristics of the sealing resin to be detected.
[0007] On the other hand, Patent Document 4 aims to provide an inspection method capable of quickly and non-destructively inspecting the film quality of an amorphous or polycrystalline oxide semiconductor layer useful as an active layer of a thin film transistor, and a method for producing an amorphous or polycrystalline oxide semiconductor layer utilizing the inspection method. In Patent Document 4, an amorphous or polycrystalline oxide semiconductor layer to be inspected is irradiated with excitation light, and the intensity of photoluminescence light 4 in a wavelength region longer than the wavelength corresponding to the band gap energy is measured among the light emitted from the oxide semiconductor layer to be inspected. Then, the same photoluminescence light intensity and film quality are measured for an amorphous or polycrystalline reference oxide semiconductor layer that is manufactured in the same process as the oxide semiconductor layer to be inspected and has the same elemental composition and film thickness as the oxide semiconductor layer to be inspected, and the relationship between the photoluminescence light intensity and the film quality is obtained, and the film quality of the oxide semiconductor layer is estimated based on this relationship. That is, the inspection is performed using photoluminescence.
[0008] Furthermore, Patent Document 5 describes a method for inspecting defects occurring in a wide gap semiconductor substrate. In this inspection method, excitation light is irradiated onto the wide gap semiconductor substrate, photoluminescence light in the visible light region emitted by the irradiation of the wide gap semiconductor substrate with the excitation light is captured, and the wide gap semiconductor substrate is inspected for defects based on the difference in intensity of light emitted from a portion of the wide gap semiconductor substrate containing the defect to be inspected and the intensity of light emitted from a portion of the wide gap semiconductor substrate not containing the defect to be inspected, in the captured image containing the photoluminescence light in the visible light region. [Prior art documents] [Patent documents]
[0009] [Patent Document 1] JP 2019-86412 A [Patent Document 2] Japanese Patent Application Publication No. 61-108518 [Patent Document 3] Japanese Patent Application Publication No. 59-224540 [Patent Document 4] JP 2010-123872 A [Patent Document 5] International Publication No. 2016-121628 Summary of the Invention [Problem to be solved by the invention]
[0010] As described above, in conventional semiconductor inspection methods and semiconductor defect detection, methods using photoluminescence light have been developed, but methods using photoluminescence light have not been used in resin characteristic measurement. In this embodiment, the photoluminescence reaction is used to facilitate resin characteristic determination. This makes it possible to discover silent changes and inclusion of resin materials outside of specifications, which were previously difficult. In addition, the photoluminescence reaction of the semiconductor sealing resin itself is used to facilitate type determination of the semiconductor sealing resin, making it easy to discover silent changes and inclusion of resin materials outside of specifications. [Means for solving the problem]
[0011] The resin characteristic measuring device of this embodiment is characterized by comprising: a light irradiating means for irradiating excitation light of a predetermined wavelength onto the resin to be inspected; a light spectrum information acquiring means for receiving and dispersing photoluminescence light produced in the resin to be inspected upon exposure to the excitation light, and acquiring light spectrum information based on the dispersed light; and an output means for outputting the acquired light spectrum information.
[0012] The resin property measuring device of this embodiment is characterized by comprising a resin property determining means for determining whether the resin properties are similar or different by comparing comparison optical spectrum information obtained based on photoluminescence light obtained from a reference resin that serves as the basis for determination with the optical spectrum information obtained by the optical spectrum information acquisition means.
[0013] The resin characteristic measuring device of this embodiment is characterized in that the optical spectrum information is obtained by using a device that resolves wavelengths using a filter that obtains wavelengths in a specific range.
[0014] The resin characteristic measuring device of this embodiment is characterized in that photoluminescence light in a predetermined wavelength region is extracted using a filter, and the optical spectrum information is obtained based on this extracted photoluminescence light.
[0015] The resin characteristic measuring device of this embodiment is characterized by comprising a light irradiation unit moving means for moving the light irradiation unit of the light irradiation means so that the light irradiation spot by the light irradiation means moves on the surface of the resin to be inspected.
[0016] In the resin property measuring device of this embodiment, the resin property determination means is characterized in that when the optical spectrum information obtained by the optical spectrum information acquisition means indicates that no photoluminescence light is being obtained by photoluminescence, it determines that an undesired physical property part is present in the area of the resin to be inspected corresponding to the light irradiation spot at that time.
[0017] In the resin characteristic measuring device of this embodiment, the resin to be inspected is a resin that seals a semiconductor, and the surface of the resin has been removed.
[0018] The resin characteristic measuring method of this embodiment is characterized by comprising a light irradiation step of irradiating the resin to be inspected with excitation light of a predetermined wavelength, a light spectrum information acquisition step of receiving and dispersing photoluminescence light produced in the resin to be inspected upon exposure to the excitation light, obtaining light spectrum information based on the dispersed light, and an output step of outputting the obtained light spectrum information.
[0019] The resin characteristic measuring method of this embodiment is characterized by including a resin characteristic determination step of comparing comparison optical spectrum information obtained based on photoluminescence light obtained from a reference resin that serves as the basis for judgment with the optical spectrum information obtained by the optical spectrum information acquisition means to determine whether the resin characteristics are similar or different.
[0020] In the resin characteristic measuring method of this embodiment, in the optical spectrum information acquiring step, the optical spectrum information is acquired using a device that resolves wavelengths using a filter that acquires wavelengths in a specific range.
[0021] In the resin characteristic measuring method of this embodiment, in the optical spectrum information acquiring step, a filter is used to extract photoluminescence light in a predetermined wavelength region, and the optical spectrum information is obtained based on the extracted photoluminescence light.
[0022] The resin characteristic measuring method of this embodiment is characterized by including a light irradiation unit moving step of moving the light irradiation unit in the light irradiation step so that the light irradiation spot caused by the light irradiation step moves on the surface of the resin to be inspected.
[0023] In the resin characteristic measuring method of this embodiment, the resin characteristic determination step is characterized in that, if the optical spectrum information obtained in the optical spectrum information acquisition step indicates that photoluminescence light is not being obtained by photoluminescence, it is determined that an undesired physical property part is present in the area of the resin to be inspected corresponding to the light irradiation spot at that time.
[0024] The resin characteristic measuring method of this embodiment is characterized in that it includes a removal step of removing the surface of the resin that has encapsulated the semiconductor, and the removed resin that has encapsulated the semiconductor is the resin to be inspected. [Brief description of the drawings]
[0025] [Figure 1]FIG. 1 is a block diagram of a resin characteristic measuring device according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is a cross-sectional view of a sample that is a characteristic measurement target of the resin characteristic measuring apparatus according to the embodiment of the present invention. [Diagram 3] 1A and 1B are photographic images showing the state of photoluminescence light generation when the surface of a sample related to the characteristic measurement target of a resin characteristic measuring device according to an embodiment of the present invention is not polished and is polished. [Figure 4] Line graphs of the light spectrum information obtained when the surfaces of six types of resin are not polished. [Diagram 5] A line graph of the optical spectrum information obtained when the surfaces of six types of resin are polished. [Figure 6] FIG. 2 is a block diagram of a computer constituting a determination device provided in the resin characteristic measuring device according to the first embodiment of the present invention. [Figure 7] FIG. 2 is a diagram showing a configuration provided in an external storage device included in the resin property measuring device according to the embodiment of the present invention. [Figure 8] 3 is a flowchart showing the operation of the resin characteristic measuring device according to the first embodiment of the present invention. [Figure 9] 3 is a flowchart showing the operation of the resin characteristic measuring device according to the first embodiment of the present invention. [Figure 10] FIG. 5 is a block diagram of a resin characteristic measuring device according to a second embodiment of the present invention. [Figure 11] FIG. 11 is a block diagram of a computer constituting a determination device provided in a resin characteristic measuring device according to a second embodiment of the present invention. [Figure 12] 4A and 4B are diagrams showing a state in which a light irradiation spot by a light irradiation means of the present embodiment moves while scanning the surface of a resin to be inspected. [Figure 13] FIG. 11 is a diagram showing an example of an output result by a resin property measuring device according to a second embodiment of the present invention. [Figure 14] 6 is a flowchart showing the operation of a resin characteristic measuring device according to a second embodiment of the present invention. [Figure 15] 13A and 13B are a visible light image and a photoluminescence image taken in a region where a bonding wire that is suspected to be defective is exposed. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0026] Hereinafter, a resin characteristic measuring device and a resin characteristic measuring method according to an embodiment of the present invention will be described with reference to the accompanying drawings. In each drawing, the same components are given the same reference numerals and duplicated explanations will be omitted. Figure 1 shows a block diagram of a resin characteristic measuring device according to a first embodiment. A sample 20 is placed on a mounting table 10 with the surface facing up.
[0027] 2, the sample 20 can be a semiconductor in which a semiconductor chip 22 is sealed with an inspection target resin 21. The semiconductor chip 22 is provided on a substrate 23, and wiring 24 extends from the semiconductor chip 22 to a terminal (not shown) in the substrate 23 for connection. A bump 25 is attached to the terminal of the substrate 23 from the rear surface side. Therefore, the inspection target resin 21 is a resin that seals a semiconductor.
[0028] In this embodiment, the semiconductor chip 22 is sealed with the resin 21 to be inspected, but the present invention is not limited to this and may be applied to resins that do not seal semiconductors. For example, when a resin manufacturer checks and compares the spectrum of its resins without sealing semiconductors, the resin before being used for sealing may be the resin to be inspected.
[0029] The resin characteristic measuring device according to the embodiment mainly comprises an optical system 30, a light emitting device 40, and a light receiving and processing device 70. The light emitting device 40 is provided with an excitation light generating source 41, which generates excitation light for exciting the resin to generate photoluminescence light and emits the excitation light toward the optical system 30. The excitation light passes through the optical system 30 and irradiates the surface of the inspection target resin 21. The optical system 30 and the excitation light generating source 41 constitute a light irradiating means for irradiating the inspection target resin 21 with excitation light of a predetermined wavelength. The optical system 30 also constitutes a light irradiating section.
[0030] In the resin 21 to be inspected that has received the excitation light, photoluminescence light is generated by photoluminescence. The photoluminescence light is sent to the light receiving processing device 70 via the optical system 30. The light receiving processing device 70 is provided with a light spectrum information acquiring means 50 that receives the received photoluminescence light, disperses it, and acquires light spectrum information based on the dispersed light. The light spectrum information acquiring means 50 may be configured to acquire the light spectrum information using a device that resolves wavelengths using a filter that acquires a specific range of wavelengths. Examples of devices that resolve wavelengths using a filter that acquires a specific range of wavelengths include devices that obtain wavelength information such as a fluorescence spectrophotometer, a hyperspectral camera, and a multispectral camera. In addition, the light spectrum information may be obtained based on the extracted photoluminescence light by extracting photoluminescence light in a predetermined wavelength range using a filter such as a bandpass filter or a lowpass filter. Here, the filter may be one that can remove only the wavelength of the excitation light. As described above, the light spectrum information is obtained by dispersing the light in the light spectrum information acquiring means 50 to obtain light spectrum information.
[0031] The light receiving and processing device 70 in the resin property measuring device of FIG. 1 is provided with a resin property determination means 71, which determines whether the resin properties are similar or different by comparing comparison optical spectrum information obtained based on photoluminescence light obtained from a reference resin that serves as the basis for determination with the optical spectrum information obtained by the optical spectrum information acquisition means 50.
[0032] When excitation light was generated by excitation light source 41 and irradiated from optical system 30 onto the surface of resin 21 to be inspected, the results shown in FIG. 3, which shows a cross section of a semiconductor cut along a plane perpendicular to the front and back surfaces, were obtained. When visible light was irradiated onto the cross section of the resin encapsulating the semiconductor, no change was observed in the resin, as shown by "visible light irradiation" in the center of FIG. 3. On the other hand, when excitation light was irradiated onto the cross section of the resin encapsulating the semiconductor, no photoluminescence light was obtained 50 to 100 μm from the surface of the resin, but blue photoluminescence light was obtained from deeper areas than that, as shown by "excitation light irradiation" on the right of FIG. 3. This indicates that photoluminescence light cannot be obtained from the outermost surface, and that it is necessary to remove the surface of the resin in order to obtain photoluminescence. The excitation light used here can have a wavelength equal to or shorter than the wavelength of the photoluminescence light. As a method for removing the surface, in addition to polishing, chemicals, laser light, etc. may be used.
[0033] Therefore, the resin characteristic measuring method according to the present embodiment includes a removing step of removing the surface of the resin that has encapsulated the semiconductor, and the resin from which the surface has been removed is the resin to be inspected. In the resin characteristic measuring device according to the present embodiment, the resin to be inspected 21 of the sample 20 is the resin that has encapsulated the semiconductor, and the surface of the resin has been removed by polishing or the like.
[0034] With the above-mentioned configuration, when optical spectrum information is obtained based on the photoluminescence light received and dispersed by the optical spectrum information acquisition means 50, optical spectrum information such as that shown in Fig. 4 is obtained when the surface is not polished, and optical spectrum information such as that shown in Fig. 5 is obtained when the surface is polished. In both the cases where the surface is not polished and where it is polished, resins A, B, C, D, E, and F were used as the resins that encapsulated the semiconductor.
[0035] In this embodiment, in order to detect silent changes and the like, the resin characteristic determination means 71 of the light receiving and processing device 70 is provided with comparative light spectrum information obtained based on photoluminescence light obtained from a reference resin (a regular reference resin that has not undergone silent changes and the like) that serves as the basis for determination. Comparative light spectrum information is provided for each type of reference resin.
[0036] In the resin characteristic measurement according to this embodiment, the optical spectrum information obtained based on the photoluminescence light obtained from the sample 20 to be measured is compared with the above-mentioned optical spectrum information for comparison to determine whether the resin characteristics are the same or different. In the comparison performed here, if the optical spectrum information is obtained as a line graph as shown in Figures 4 and 5, the line graphs are compared to determine whether they are the same or different based on the degree of agreement (percentage), etc.
[0037] In addition, the optical spectrum information can be a set of data based on intensity values for each sampled wavelength, and a comparison can be made between the optical spectrum information for comparison (numerical values) and the optical spectrum information (numerical values) obtained based on the photoluminescence light obtained from the sample 20 to be measured, and a determination of similarity or difference can be made based on the degree of agreement (percentage), etc.
[0038] The resin characteristic determination means 71 can be realized by a computer configuration as shown in Fig. 6. That is, a CPU 100 configures the resin characteristic determination means 71 using programs and data in a main memory 110. An external storage interface 130, an input interface 140, a display interface 150, and an I / O interface 160 are connected to the CPU 100 via a bus 120.
[0039] An external storage device 230 is connected to the external storage interface 130. The external storage device 230 stores programs and data for the light receiving and processing device 70 to operate, and the CPU 100 can read these into the main memory 110 as appropriate and use them. For this reason, the external storage device 230 stores a program for implementing the function of the determination in the resin characteristic determination means 71. An input device 240 such as a keyboard or a touch panel and a pointing device 220 such as a mouse are connected to the input interface 140. A display device 250 having a screen such as an LCD is connected to the display interface 150, and the display device 250 realizes display (output) of images and the like required in the light receiving and processing device 70. The display device 250 is an output means, and a configuration such as a printer can also be used as the output means. An optical spectrum information acquisition means 50 is connected to the I / O interface 160, and the optical spectrum information obtained based on the photoluminescence light can be captured by the optical spectrum information acquisition means 50. An input device 240 such as a keyboard for inputting data and commands and a pointing device 220 such as a mouse are connected to the input interface 140, and the necessary operations and processing can be performed in the light receiving and processing device 70 by operating the input device 240 and the pointing device 220 such as a mouse.
[0040] As shown in Fig. 7, the external storage device 230 stores a resin characteristic determination means 71 for realizing a function of determining whether resin characteristics are the same or different. The resin characteristic determination means 71 of the light receiving and processing device 70 according to this embodiment performs the operation already described. This operation can be a process corresponding to the flowcharts shown in Figs. 8 and 9, so the operation will be described according to these flowcharts.
[0041] FIG. 8 shows the process for the reference resin. The reference resin is set on the mounting table 10, and the surface of the reference resin is polished (removed) as a preparatory step for the process by the optical spectrum information acquisition means 50 and the resin characteristic determination means 71 (S10). In the examples of FIG. 8 and FIG. 9, polishing is adopted as the surface removal. In step S10, polishing to a predetermined thickness is performed using a polishing machine (automatic polishing machine, etc.). Next, the reference resin with the polished surface is set on the mounting table 10, excitation light is generated from the excitation light generation source 41, and the surface of the reference resin is irradiated through the optical system 30 to generate excitation and generate photoluminescence light (S11). The photoluminescence light is split in the optical spectrum information acquisition means 50, and optical spectrum information is obtained based on the split light (S12). Since this obtained optical spectrum information is optical spectrum information of the reference resin, it is stored as optical spectrum information for comparison, for example, in the external storage device 230 (S13). This optical spectrum information for comparison may be output from the display device 250, which is an output means.
[0042] When the optical spectrum information for comparison based on the optical spectrum information of the reference resin of the necessary type is accumulated as described above, the process proceeds to the process of resin characteristic judgment for the resin to be inspected. FIG. 9 shows the process for the resin to be inspected. The resin to be inspected is set on the mounting table 10, and the surface of the resin to be inspected is polished (removed) as a preparatory step for processing by the optical spectrum information acquisition means 50 and the resin characteristic judgment means 71 (S20). In this step S20, polishing to a predetermined thickness is performed using a polishing machine (automatic polishing machine, etc.). Next, the resin to be inspected whose surface has been polished is set on the mounting table 10, and excitation light is generated from the excitation light generation source 41, and the surface of the resin to be inspected is irradiated through the optical system 30 to generate excitation and generate photoluminescence light (S21). The photoluminescence light is dispersed in the optical spectrum information acquisition means 50, and optical spectrum information is obtained based on the dispersed light, and is displayed (output) on the display device 250, which is the output means (S22). Since this optical spectrum information is the optical spectrum information of the resin to be inspected, the comparison optical spectrum information stored in advance is read out and compared (S23), and it is determined whether the optical spectrum information of the resin to be inspected and the comparison optical spectrum information match (S24). In this determination, the degree of match (percentage) is used to determine whether they are the same or different, as described above. If the result of step S24 is YES, a message indicating that the characteristics (optical spectrum information) match the reference resin is output (displayed) (S25), and if the result of step S24 is NO, a message indicating that the characteristics do not match the reference resin (the characteristics (optical spectrum information) do not match) is output (displayed) (S26). In this embodiment, the process is performed up to the detection of whether the optical spectrum information of the resin to be inspected and the comparison optical spectrum information match, but the process can also end with the display (output) in step S22. In this case, both the optical spectrum information of the resin to be inspected and the comparison optical spectrum information may be displayed on one screen, or may be selectively displayed by switching to two screens. In addition to preparing the comparison optical spectrum information of all the reference resins in advance, one acquired comparison optical spectrum information may be displayed (output) so as to be compared with the next acquired optical spectrum information of the resin to be inspected.
[0043] FIG. 10 shows a block diagram of a resin characteristic measuring device according to a second embodiment. In this embodiment, a light irradiation unit moving device 80 is provided as a light irradiation unit moving means. The light irradiation unit moving device 80 moves the optical system 30 so that the light irradiation spot by the optical system 30 moves on the surface of the resin to be inspected. In this embodiment, a scanning and moving method is adopted. FIG. 11 shows a block diagram of a computer constituting the resin characteristic determination means 71 provided in the resin characteristic measuring device according to the second embodiment of the present invention. In this computer configuration, in addition to the configuration of the computer constituting the resin characteristic determination means 71 in the first embodiment, an I / O interface 180 is provided, and the light irradiation unit moving device 80 is connected to this I / O interface 180, and a command for control related to the movement for the above scanning can be sent from the CPU 100.
[0044] That is, when there is a surface 20S of the resin to be inspected as shown in FIG. 12, the excitation light emitted from the optical system 30 is irradiated within a circular range of the surface 20S. In this case, the circular range of the surface 20S is defined as a light irradiation spot SP, and the optical system 30 is moved so that the light irradiation spot SP scans and moves in the XY direction on the surface 20S of the resin to be inspected as shown by the arrow. For example, the optical system 30 advances in the X direction one step at a time, with a predetermined distance from the leftmost and topmost point (initial position) of the surface 20S of the resin to be inspected, and performs light irradiation and light reception for each step. When the optical system 30 reaches the rightmost end, it moves a predetermined distance downward in the Y direction, and advances one step at a time to the left in the X direction of the second row in the same manner as above, and performs light irradiation and light reception for each step. Thereafter, light irradiation and light reception are performed by similar scanning, and the process is continued up to the final position (the rightmost and bottommost points of the surface 20S, or the leftmost and bottommost points of the surface 20S), and scanning is continued until the predetermined number of points n is reached. Of course, when the surface 20S of the resin to be inspected is within one light irradiation spot SP, the number of scans can be set to one. The scanning trajectory in this case is shown by the dashed line in FIG.
[0045] In the resin characteristic measuring device according to the present embodiment, impurities contained in the resin to be inspected can be detected. In other words, if a material that does not emit photoluminescent light when irradiated with light of a predetermined wavelength is contained in a resin that emits photoluminescent light when irradiated with excitation light of a predetermined wavelength, photoluminescent light is not obtained from the region of this material. The resin characteristic judgment is performed by using the comparison light spectrum information obtained based on the photoluminescent light obtained from the reference resin, which is the criterion for judgment, as the size of the material to be detected based on the width of the light irradiation spot SP, as light spectrum information (impurity reference value) with a much lower intensity level than the light spectrum information for the photoluminescent light obtained from the reference resin.
[0046] As described above, when the optical spectrum information obtained by the optical spectrum information acquisition means 50 indicates that photoluminescence light by photoluminescence is not obtained, the resin characteristic determination means 71 determines that there is an undesired physical property defect in the region of the resin to be inspected corresponding to the light irradiation spot at that time. Here, the undesired physical property part is anything having physical properties that can obtain optical spectrum information different from that of the resin intended by the inspector, including resin that can obtain different optical spectrum information, foreign matter other than resin, and defects such as voids. FIG. 13 is a flow chart showing the processing of defect inspection for the resin to be inspected. The resin to be inspected is set on the mounting table 10, and the surface of the resin to be inspected is polished (removed) as a preparatory step for the processing of defect inspection by the optical spectrum information acquisition means 50 and the resin characteristic determination means 71 (S30). Polishing is also adopted for removing the surface in the example of FIG. 13.
[0047] In step S30, a polishing machine (such as an automatic polishing machine) is used to polish the resin to a predetermined thickness. Next, the resin to be inspected whose surface has been polished is set on the mounting table 10, and the irradiation point number register i is set to an initial value of 1 (S31). Excitation light is generated from the excitation light generating source 41, and the optical system 30 is scanned (moved) so that the light is irradiated to the light irradiation spot corresponding to the irradiation point number register i on the surface of the reference resin, and the light is irradiated to generate excitation and generate photoluminescence light (S32). The photoluminescence light is dispersed in the optical spectrum information acquiring means 50, and optical spectrum information is obtained based on the dispersed light (S33). Then, depending on whether all levels of the optical spectrum information are equal to or lower than the reference resin reference value, information indicating whether the light irradiation spot has characteristics other than the reference resin or the characteristics of the reference resin is stored in correspondence with the position information of the current light irradiation spot (S34).
[0048] Next, it is detected whether the value of the irradiation point number register i has reached a predetermined number of points n (S35), and if the process branches to NO, the value of the irradiation point number register i is incremented by 1 (S36), and steps S32 to S35 are repeated. As steps S32 to S35 are repeated in this manner, the process branches to YES in step S35. If the process branches to YES in step S35, information indicating the characteristics of the reference resin or the characteristics of the reference resin corresponding to the position information corresponding to the scanning of each step from the initial position to the final position is stored, and this information is output (displayed) (S37).
[0049] In the example of Fig. 13, when the value of the irradiation point number register i reaches a predetermined number of points n, information indicating the characteristics of the reference resin or the characteristics of the non-reference resin corresponding to the position information corresponding to the scanning from the initial position to the final position step by step is output (displayed), but this is not limited to this. Every time the light irradiation spot corresponding to the irradiation point number register i is irradiated with light and optical spectrum information is obtained, information indicating the characteristics of the non-impurity reference resin or the characteristics of the reference resin corresponding to the position information may be output (displayed). Also, every time the light irradiation spot corresponding to the irradiation point number register i is irradiated with light and optical spectrum information is obtained, the optical spectrum information may be output (displayed), or may be displayed together with the optical spectrum information for comparison.
[0050] If the information showing the characteristics of the resin other than the reference resin is represented by "x" and the information showing the characteristics of the reference resin is represented by "o", the output is as shown in FIG. 14, and the information on whether impurities are included and the position information can be properly grasped. In the above second embodiment, since it is difficult to know what the resin other than the reference resin looks like, the sealing resin in the resin-sealed semiconductor is polished from the surface, and a visible light image captured in the area where the bonding wire, which is assumed to be defective, is exposed is shown in FIG. 15(a), and a photoluminescence image captured in the same area is shown in FIG. 15(b). In the visible light image, the bonding wire looks copper-colored, and the sealing resin looks black due to the pigment. In the photoluminescence image, crater-like unevenness is visible, but this is thought to be because the silica filler in the resin irradiated with the excitation light from an oblique direction is transparent, so a contrast occurs between the part shaded by the resin in between and the part directly hit by the excitation light, resulting in the appearance as shown in the figure. In addition, the bonding wire part looks black because it is non-fluorescent. The yellow circled areas shown in Figures 15(a) and (b) are areas where no bonding wires are present, but dark contrast is visible, indicating that a substance other than the reference resin is present there.
[0051] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims.
[0052] For example, in the second embodiment, a configuration is adopted in which the light irradiation unit is moved by scanning using, for example, a scanning microscope, but a configuration in which the light irradiation unit is moved to a desired position using not only a scanning microscope but also a general irradiation type configuration may be adopted. [Explanation of symbols]
[0053] 10. Placement table 20 Samples 20S surface 21 Resin to be inspected 22 Semiconductor Chips 23 Substrate 24 Wiring 25 Bump 30 Optical system 40 Light emitting device 41 Excitation light source 50 Optical spectrum information acquisition means 70 Light receiving and processing device 71 Resin characteristic determination method 80 Light irradiation unit moving device 100 CPU 110 Main Memory 120 Bus 130 External memory interface 140 Input Interface 150 Display Interface 160, 180 I / O interface 220 Pointing Device 230 External storage device 240 Input Device 250 Display device SP Light irradiation spot
Claims
1. a light irradiation means for irradiating the resin to be inspected with excitation light of a predetermined wavelength; an optical spectrum information acquiring means for receiving and dispersing photoluminescence light produced by photoluminescence in the resin to be inspected upon receiving the excitation light, and acquiring optical spectrum information based on the dispersed light; an output means for outputting the obtained optical spectrum information; A resin characteristic measuring device comprising:
2. A resin characteristic determination means for determining whether resin characteristics are the same or different by comparing optical spectrum information for comparison obtained based on photoluminescence light obtained from a reference resin serving as a reference for determination with the optical spectrum information obtained by the optical spectrum information acquisition means.
2. The resin characteristic measuring device according to claim 1, further comprising:
3. 3. The resin characteristic measuring device according to claim 1, wherein the optical spectrum information is obtained by using a device for resolving wavelengths using a filter for acquiring a specific range of wavelengths.
4. 2. The resin characteristic measuring device according to claim 1, wherein the optical spectrum information is obtained based on photoluminescence light extracted from a predetermined wavelength region using a filter.
5. 2. The resin characteristic measuring device according to claim 1, further comprising a light irradiation unit moving unit that moves the light irradiation unit of the light irradiation unit so that the light irradiation spot by the light irradiation unit moves on the surface of the resin to be inspected.
6. The resin characteristic measuring device described in claim 2, characterized in that when the optical spectrum information obtained by the optical spectrum information acquisition means indicates that no photoluminescence light is obtained by photoluminescence, the resin characteristic determination means determines that an undesired physical property portion is present in the area of the resin to be inspected corresponding to the light irradiation spot at that time.
7. 2. The resin characteristic measuring device according to claim 1, wherein the resin to be inspected is a resin that encapsulates a semiconductor, the surface of which has been removed.
8. a light irradiation step of irradiating the resin to be inspected with excitation light of a predetermined wavelength; an optical spectrum information acquisition step of receiving and dispersing photoluminescence light caused by photoluminescence generated in the resin to be inspected upon receiving the excitation light, and acquiring optical spectrum information based on the dispersed light; an output step of outputting the obtained optical spectrum information; A method for measuring resin characteristics, comprising:
9. a resin characteristic determination step of determining whether the resin characteristics are the same or different by comparing optical spectrum information for comparison obtained based on photoluminescence light obtained from a reference resin serving as a reference for determination with the optical spectrum information obtained by the optical spectrum information acquisition means; The method for measuring resin characteristics according to claim 8, further comprising:
10. 9. The resin characteristic measuring method according to claim 8, wherein in the optical spectrum information acquiring step, the optical spectrum information is acquired by using a device that resolves wavelengths using a filter that acquires wavelengths in a specific range.
11. 9. The resin characteristic measuring method according to claim 8, characterized in that, in the optical spectrum information acquiring step, the optical spectrum information is obtained based on photoluminescence light extracted using a filter in a predetermined wavelength range.
12. The resin characteristic measuring method according to claim 8, further comprising a light irradiation unit moving step of moving the light irradiation unit in the light irradiation step so that the light irradiation spot caused by the light irradiation step moves on the surface of the resin to be inspected.
13. The resin characteristic measuring method according to claim 9, characterized in that in the resin characteristic determination step, if the optical spectrum information obtained in the optical spectrum information acquisition step indicates that no photoluminescence light is obtained by photoluminescence, it is determined that an undesired physical property part is present in the area of the resin to be inspected corresponding to the light irradiation spot at that time.
14. 9. The method for measuring resin characteristics according to claim 8, further comprising a step of removing a surface of the resin that has encapsulated the semiconductor, the removed resin that has encapsulated the semiconductor being the resin to be inspected.
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