Method for manufacturing light-emitting device and light-emitting device

Abstract

To provide a method for manufacturing a light-emitting device that can have good light emission characteristics, and a light-emitting device.SOLUTION: A method for manufacturing a light-emitting device includes the steps of: preparing a structure including a substrate and a light source part that includes an element substrate and a plurality of light-emitting portions and that is disposed on the substrate, each of the light-emitting portions including a semiconductor structure having a first surface facing the element substrate and a second surface positioned at a side opposite to the first surface; disposing a structure between an upper mold and a lower mold, supplying a resin material into the molds in a state in which an upper surface of the element substrate is covered with a covering member, and after curing the resin material, removing the covering material to dispose a first resin part between the upper surface of the substrate and the second surface of each semiconductor structure; and removing the element substrate from the light source part.SELECTED DRAWING: Figure 4D

Description

[Technical field]

[0001] The present disclosure relates to a method for manufacturing a light emitting device and a light emitting device. [Background technology]

[0002] For example, Patent Document 1 discloses forming a resin member between a light emitting element and a substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-23156 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the embodiments of the present disclosure is to provide a method for manufacturing a light emitting device that can improve light emitting characteristics, and the light emitting device. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a method for manufacturing a light emitting device includes the steps of: preparing a structure having a substrate having a plurality of pairs of wiring portions on an upper surface thereof; and a light source portion having an element substrate and a plurality of light emitting portions and disposed on the substrate, wherein each of the light emitting portions has a semiconductor structure having a first surface facing the element substrate and a second surface located opposite to the first surface; and a pair of electrode portions disposed on the second surface of the semiconductor structure and electrically connected to the pair of wiring portions of the substrate; preparing a mold having an upper mold and a lower mold; disposing the structure between the upper mold and the lower mold, and, with the upper surface of the element substrate covered with a covering member, supplying a resin material into the mold, hardening the resin material, and then removing the covering member, thereby disposing a first resin portion between the second surface of each of the semiconductor structures and the upper surface of the substrate; and removing the element substrate from the light source portion.

[0006] According to one aspect of the present disclosure, a light emitting device comprises a first structure having a substrate, a plurality of light emitting sections arranged on an upper surface of the substrate, and a first resin section that holds the plurality of light emitting sections and exposes upper surfaces of the light emitting sections, and a second structure having a plurality of wavelength conversion members arranged on each of the light emitting sections and a second resin section arranged between the plurality of wavelength conversion members, wherein the first resin section has a light reflecting section having high light reflectivity and a light absorbing section having higher light absorption than the light reflecting section that is arranged on the light reflecting section, and the second resin section is arranged on the light absorbing section. Effect of the Invention

[0007] According to the embodiments of the present disclosure, it is possible to provide a manufacturing method for a light emitting device and a light emitting device that can achieve good light emitting characteristics. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic top view of a light emitting device according to a first embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG. [Diagram 3]3 is a schematic bottom view of a light-emitting portion and a bonding member in the light-emitting device according to the first embodiment. FIG. [Figure 4A] FIG. 2 is a schematic top view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 4B] 4B is a schematic cross-sectional view taken along line IVB-IVB in FIG. 4A. [Figure 4C] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 4D] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 4E] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 4F] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 5A] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 5B] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 5C] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 5D] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 6A] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 6B] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 6C] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 6D] 5 is a schematic cross-sectional view illustrating a step of the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 7] FIG. 6 is a schematic top view of a light emitting device according to a second embodiment. [Figure 8] 8 is a schematic cross-sectional view taken along line VIII-VIII in FIG. 7. [Figure 9] FIG. 11 is a schematic cross-sectional view of a light emitting device according to a third embodiment. [Figure 10A] 13 is a schematic cross-sectional view illustrating a step of a method for manufacturing the light emitting device according to the third embodiment. FIG. [Figure 10B] FIG. 11 is a schematic top view illustrating a step of the method for manufacturing the light emitting device according to the third embodiment. [Figure 10C] 10C is a schematic cross-sectional view taken along line XC-XC in FIG. 10B. [Figure 10D] FIG. 11 is a schematic top view illustrating a step of the method for manufacturing the light emitting device according to the third embodiment. [Figure 10E] FIG. 10E is a schematic cross-sectional view taken along line XE-XE of FIG. 10D. [Figure 10F] 13 is a schematic cross-sectional view illustrating a step of a method for manufacturing the light emitting device according to the third embodiment. FIG. [Figure 10G] 13 is a schematic cross-sectional view illustrating a step of a method for manufacturing the light emitting device according to the third embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, a method for manufacturing a light-emitting device and a light-emitting device according to an embodiment of the present disclosure will be described with reference to the drawings. The following embodiments are illustrative of a method for manufacturing a light-emitting device and a light-emitting device for embodying the technical idea of ​​the present embodiment, and are not limited to the following. Furthermore, unless otherwise specified, the dimensions, materials, shapes, and relative arrangements of the components described in the embodiments are merely illustrative examples, and are not intended to limit the scope of the present disclosure to those alone. Note that the size, positional relationship, etc. of the components shown in each drawing may be exaggerated to clarify the explanation. In addition, in the following explanation, the same names and symbols indicate the same or homogeneous components, and detailed explanations will be omitted as appropriate. In addition, as a cross-sectional view, an end view showing only a cut surface may be shown.

[0010] In the following description, terms indicating a specific direction or position (for example, "upper", "lower" and other terms including these terms) may be used. However, these terms are merely used for the purpose of making the relative direction or position in the referenced drawings easier to understand. As long as the relationship of the relative direction or position by terms such as "upper" and "lower" in the referenced drawings is the same, the arrangement in drawings other than the present disclosure, in actual products, etc. may not be the same as that in the referenced drawings. The positional relationship expressed as "upper (or lower)" in this specification includes, for example, a case in which the two members are in contact with each other when two members are assumed to be present, and a case in which the two members are not in contact with each other and one member is located above (or below) the other member. In this specification, unless otherwise specified, a member covering a covered object includes a case in which the member is in contact with the covered object and directly covers the covered object, and a case in which the member is not in contact with the covered object and indirectly covers the covered object. In this specification, the width, distance, and thickness of a member in a specific direction respectively represent the maximum values ​​of the width, distance, and thickness in the specific direction. In the embodiment, the term "planar view" refers to viewing an object from above. In this specification, in addition to a portion that can be directly viewed from above, a portion that cannot be directly viewed from above may also be described as being seen through the object.

[0011] In the figures shown below, directions may be indicated by the X-axis, Y-axis, and Z-axis. The direction along the X-axis (e.g., the first direction X) indicates a predetermined direction in the light-emitting surface of the light-emitting device according to the embodiment. The direction along the Y-axis (e.g., the second direction Y) indicates a direction perpendicular to the first direction X in the light-emitting surface. The light-emitting surface of the light-emitting device is parallel to the XY plane. The direction along the Z-axis (e.g., the third direction Z) indicates a direction perpendicular to the light-emitting surface of the light-emitting device.

[0012] In this specification, the following terms defined by the JIS K6800 standard are used to indicate the cured state of a resin. A stage: The initial stage of the thermosetting resin formation reaction. Resin in this stage is still soluble in certain solvents and melts when heated. B stage: Intermediate curing state of thermosetting resin. Resin in this state softens when heated and swells when exposed to certain solvents, but does not melt or dissolve completely. C stage: The final stage of the thermosetting resin curing reaction. In this state, the resin is insoluble and infusible, and the thermosetting resin is in this state when it is completely cured.

[0013] [First embodiment] A light emitting device 1 according to the first embodiment will be described with reference to Figures 1 to 3. The light emitting device 1 includes a first structure 101 and a second structure 102. The second structure 102 is disposed on the first structure 101.

[0014] <1st structure> The first structure 101 has a substrate 10, a plurality of light emitting sections 20, and a first resin section 30. The plurality of light emitting sections 20 are disposed on the substrate 10, and are integrally held by the first resin section 30.

[0015] 1 shows nine light-emitting sections 20 arranged in a matrix in the first direction X and the second direction Y, while FIG. 2 shows three light-emitting sections 20 adjacent to each other in the first direction X. The arrangement and number of the light-emitting sections 20 are not limited to this and can be changed according to the light-emitting characteristics required of the light-emitting device 1. For example, the light-emitting sections 20 may be 5×5 or 7×9 light-emitting sections arranged in a matrix in the first direction X and the second direction Y.

[0016] The light emitting device 1 can be used as, for example, a flash light source for an imaging device. The imaging device can be mounted on, for example, a mobile communication terminal. When the light emitting device 1 is used as a flash light source for an imaging device, for example, light can be emitted by switching between a narrow-angle mode in which only the light emitting unit 20 arranged in the center in a plan view emits light, and a wide-angle mode in which all the light emitting units 20 emit light. The narrow-angle mode has a narrower light irradiation angle than the wide-angle mode. Since the light emitting device 1 can switch the emitted light corresponding to the narrow-angle mode and the wide-angle mode, it is possible to perform shooting according to the shooting mode of the imaging device, such as telephoto or close-up. In the wide-angle mode, the irradiation angle can be adjusted by controlling the light emission intensity of each light emitting unit 20.

[0017] (Light emitting part) 2, the multiple light emitting units 20 are disposed on the upper surface of the substrate 10. Each light emitting unit 20 has a semiconductor structure 21. The semiconductor structure 21 has a first surface 21A and a second surface 21B located on the opposite side to the first surface 21A in the third direction Z. For example, the first surface 21A is an upper surface, and the second surface 21B is a lower surface.

[0018] The semiconductor structure 21 includes a nitride semiconductor. In this specification, a nitride semiconductor is, for example, In x Al y Ga 1-x-yThe term "nitride semiconductor" includes all semiconductors with compositions in which the composition ratios x and y are changed within the respective ranges in the chemical formula represented by N (0≦x≦1, 0≦y≦1, x+y≦1). In addition, in the above chemical formula, those that further include a V group element other than N (nitrogen) and those that further include various elements added to control various physical properties such as the conductivity type of the semiconductor are also included in the nitride semiconductor. The semiconductor structure 21 includes an active layer. The active layer is a light-emitting layer that emits light, and has, for example, a MQW (Multiple Quantum Well) structure including a plurality of barrier layers and a plurality of well layers. The light emitted by the active layer is, for example, visible light or ultraviolet light. For example, a plurality of light-emitting sections 20 whose variations in optical characteristics (brightness, chromaticity, etc.) are within a predetermined range are selected and used in the light-emitting device 1. The light-emitting section 20 may further include a protective film that protects the semiconductor structure 21.

[0019] The plurality of light-emitting sections 20 may be composed of light-emitting sections 20 having the same emission peak wavelength, or may include light-emitting sections 20 having different emission peak wavelengths. Note that the light-emitting sections 20 having the same emission peak wavelength may be light-emitting sections whose emission peak wavelengths are within a range of ±5 nm.

[0020] The light emitting section 20 shown in FIG. 2 does not have an element substrate used for growing the semiconductor structure 21. This can reduce the amount of light emitted by the active layer that is reflected by the side surface of the element substrate and returns to the semiconductor structure 21, improving the light extraction efficiency. Furthermore, since the light emitting section 20 does not have an element substrate, it can reduce the spread of light from the light emitting section 20 caused by the light emitted by the active layer propagating into the element substrate, improving the illuminance of light from each light emitting section 20 on the irradiation surface. The upper surface 20A of the light emitting section 20 may be the first surface 21A of the semiconductor structure 21, or may be the upper surface of the protective film if a protective film covering the first surface 21A is provided on the first surface 21A.

[0021] Each light emitting unit 20 further has a pair of electrode units 22 arranged on the second surface 21B of the semiconductor structure 21. One of the pair of electrode units 22 functions as an anode electrode, and the other functions as a cathode electrode. The pair of electrode units 22 only needs to include an anode electrode and a cathode electrode, and may include three or more electrode units.

[0022] The first surface 21A of the semiconductor structure 21 may include a rough surface portion. The arithmetic mean roughness of the rough surface portion on the first surface 21A is, for example, 0.5 μm or more and 10 μm or less. By including the rough surface portion on the first surface 21A of the semiconductor structure 21, the light extraction efficiency from the first surface 21A of the semiconductor structure 21 can be improved.

[0023] (substrate) The light-emitting units 20 are arranged on the upper surface of the substrate 10, spaced apart from each other in the first direction X and the second direction Y. The substrate 10 functions as a support member for the light-emitting units 20. The thickness of the substrate 10 is thicker than the thickness of each light-emitting unit 20 without the element substrate and the thickness of the first resin unit 30. By setting the thickness of the substrate 10 as described above, the mechanical strength can be increased, and damage to the thin light-emitting units 20 and the first resin unit 30 during operation of the light-emitting device 1 can be reduced. In addition, in the step of removing the element substrate described later, the influence on the light-emitting units 20 and the first resin unit 30 caused by vibrations generated when removing the element substrate can be reduced. The thickness of the substrate 10 is, for example, 80 μm or more and 500 μm or less, and preferably 150 μm or more and 300 μm or less. This allows the light-emitting device 1 to be made small while increasing the mechanical strength of the substrate 10. The thickness of the light-emitting unit 20 is, for example, 3 μm or more and 30 μm or less, and 5 μm or more and 15 μm or less. The thickness of the first resin portion 30 is thicker than the thickness of the light emitting portion 20 by at least the thickness of the bonding member 80, etc. The thickness of the first resin portion 30 is, for example, 8 μm or more and 200 μm or less, or 8 μm or more and 100 μm or less.

[0024] The substrate 10 further functions as a wiring member that electrically connects the light-emitting section 20 and an external circuit. The substrate 10 has a plurality of pairs of wiring sections 11 on the upper surface. Specifically, the substrate 10 has an insulating base material 13 and a plurality of first wiring sections 11 arranged on the upper surface 13A of the insulating base material 13. A pair of first wiring sections 11 is arranged for one light-emitting section 20. One of the pair of first wiring sections 11 is electrically connected to one of the pair of electrode sections 22 of the light-emitting section 20, and the other of the pair of first wiring sections 11 is electrically connected to the other of the pair of electrode sections 22 of the light-emitting section 20. The pair of wiring sections 11 may include an anode side wiring section and a cathode side wiring section, and may include three or more wiring sections.

[0025] The insulating base material 13 has a lower surface 13B located on the opposite side to the upper surface 13A in the third direction Z. The substrate 10 may further have a second wiring portion 12 disposed on the lower surface 13B of the insulating base material 13. The second wiring portion 12 may be electrically connected to the first wiring portion 11, for example, via a conductive member penetrating the insulating base material 13. The second wiring portion 12 functions as an external connection terminal electrically connected to a mounting substrate on which the light emitting device 1 is mounted. Note that the substrate 10 is not limited to a two-layer wiring structure of the first wiring portion 11 and the second wiring portion 12, and may have a multilayer wiring structure of three or more layers.

[0026] For example, aluminum nitride, aluminum oxide, or silicon nitride can be used as the material of insulating base material 13. When aluminum nitride is used as the material of insulating base material 13, the heat dissipation of substrate 10 can be improved, and heat generated in association with light emission from light-emitting section 20 can be efficiently dissipated. Furthermore, when silicon nitride is used as the material of insulating base material 13, the thickness of substrate 10 can be reduced while maintaining the mechanical strength of substrate 10.

[0027] (First resin part) The first resin portion 30 holds the plurality of light emitting portions 20. The first resin portion 30 is disposed on the upper surface of the substrate 10, and is disposed between the second surface 21B of the semiconductor structure 21 and the upper surface of the substrate 10. The first resin portion 30 is disposed between the adjacent light emitting portions 20, and covers the side surfaces of the light emitting portions 20. The first resin portion 30 also covers the outermost side surface of the light emitting portion 20 that is located outermost in a plan view among the plurality of light emitting portions 20. The side surface of the light emitting portion 20 includes the side surface 21C of the semiconductor structure 21 and the side surface of the electrode portion 22. The first resin portion 30 is not disposed on the upper surface 20A of the light emitting portion 20, and the upper surface 20A of the light emitting portion 20 is exposed from the first resin portion 30. The first resin portion 30 is disposed between a pair of electrode portions 22 in each light emitting portion 20. The first resin portion 30 has insulating properties and does not short-circuit the pair of electrode portions 22.

[0028] The first resin section 30 includes a resin section of a base material and a metal oxide contained in the resin section of the base material. In the light emitting device 1 shown in FIG. 2, the first resin section 30 includes a light reflecting section 31 having light reflectivity with respect to light emitted by the light emitting section 20, and a light absorbing section 32 arranged on the light reflecting section 31. The light reflecting section 31 has a higher reflectance than the light absorbing section 32, and the light absorbing section 32 has a higher light absorptance than the light reflecting section 31. The light absorbing section 32 is arranged at least between adjacent light emitting sections 20. The reflectance of the light reflecting section 31 is 70% or more, 80% or more, or 90% or more for light with a peak emission wavelength of 450 nm. The reflectance of the light absorbing section 32 is 50% or less, 40% or less, or 30% or less for light with a peak emission wavelength of 450 nm. The light absorptance of the light reflecting section 31 is 30% or less, 20% or less, or 10% or less for light with a peak emission wavelength of 450 nm. The light absorbing portion 32 has a light absorptance of 50% or more, 60% or more, or 70% or more for light with an emission peak wavelength of 450 nm. The reflectance and light absorptance can be measured using, for example, a spectrophotometer.

[0029] In the light emitting device 1 shown in FIG. 2, the upper surface of the light absorbing portion 32 is the upper surface 30A of the first resin portion 30 between the adjacent light emitting portions 20. The light absorbing portion 32 is located, for example, above the active layer of the semiconductor structure 21 between the adjacent light emitting portions 20. This allows the light absorbing portion 32 to absorb a part of the light emitted from the active layer of the semiconductor structure 21, and reduces the light of the light emitting portion 20 from being emitted to the adjacent light emitting portion 20 side. For example, the light absorbing portion 32 is located closer to the first surface 21A of the semiconductor structure 21 than the position of 1 / 2 the thickness of the semiconductor structure 21. The thickness of the semiconductor structure 21 is, for example, 2 μm or more and 25 μm or less, and 4 μm or more and 15 μm or less. The thickness of the light absorbing portion 32 is, for example, 2 μm or less.

[0030] By providing a light reflecting section 31 between adjacent light emitting sections 20, when one light emitting section 20 emits light and the light emitting section 20 adjacent to the one light emitting section 20 does not emit light, it is possible to reduce the amount of light emitted from the one light emitting section 20 being irradiated toward the non-emitting light emitting section 20. This makes it possible to provide a light emitting device 1 with high contrast (the brightness ratio between the light emitting region and the non-light emitting region). Furthermore, by providing a light absorbing section 32 between adjacent light emitting sections 20, it is possible to further improve the contrast of the light emitting device 1.

[0031] Furthermore, by positioning the light absorbing section 32 on the side of the upper surface 21A, which is the light exit surface of the light emitting section 20, it is possible to reduce multiple reflections at the interface between the side surface of the light emitting section 20 and the first resin section 30 in the vicinity of the light exit surface of the light emitting section 20, compared to the case where the light reflecting section 31 is positioned. This makes it possible to reduce the appearance of a bright line that shines strongly above the interface between the light emitting section 20 and the first resin section 30 in a plan view of the light emitting device 1.

[0032] Furthermore, a part of the first resin portion 30 is located outside the multiple light-emitting portions 20 in a planar view. The light reflecting portion 31 covers the outermost side surface of the light-emitting portion 20 that is located outermost among the multiple light-emitting portions 20 in a planar view. This makes it possible to reduce the emission of light outside the area where the multiple light-emitting portions 20 are arranged (non-light-emitting area), and to provide a light-emitting device 1 with high contrast.

[0033] For example, on the upper surface of the first structure 101, the upper surface 20A of the light emitting section 20 and the upper surface 30A of the first resin section 30 are on the same plane. As described later, the light emitting device 1 is preferably subjected to a polishing process on the upper surface of the first structure 101 after removing the element substrate. By performing the polishing process, the upper surface 20A of the light emitting section 20 and the upper surface 30A of the first resin section 30 are positioned on the same plane, and cracks in the semiconductor layer caused by the process of removing the element substrate can be removed. In addition, as another embodiment, the first resin section 30 may have a part on the same plane as the upper surface 20A of the light emitting section 20 and a part different in height from the upper surface 20A of the light emitting section 20 on the upper surface 30A. For example, the first resin section 30 may have a part on the same plane as the upper surface 20A of the light emitting section 20 in a region adjacent to the upper surface 20A of the light emitting section 20, and may include a convex part or a concave part in a region located outside the plurality of light emitting sections 20 in a planar view.

[0034] The first resin part 30 may include, for example, a resin base material and a metal oxide. As the material of the resin base material, for example, a thermosetting resin such as a silicone resin, a silicone modified resin, an epoxy resin, an epoxy modified resin, or a phenol resin may be used. Among these, a silicone resin or a modified resin thereof, which is excellent in light resistance and heat resistance, is particularly suitable. As the metal oxide, for example, titanium oxide may be used. For example, the light absorption rate of titanium oxide may be changed by irradiation of laser light from the upper surface 30A side of the first resin part 30 to form the light absorbing part 32. The light absorption rate of the light absorbing part 32 containing titanium oxide after the change is higher than the light absorption rate of the light reflecting part 31 containing titanium oxide before the change. Note that the first resin part 30 may not include a metal oxide, and may include silicon oxide instead of the metal oxide. Alternatively, the light absorbing part 32 may include a resin base material and a light absorbing substance such as carbon black.

[0035] The light absorbing portion 32 is a resin portion that is located in a portion irradiated with laser light when the laser light is irradiated from the upper surface 30A side of the first resin portion 30, and contains titanium oxide lacking oxygen components (hereinafter referred to as modified titanium oxide). The modified titanium oxide has a smaller band gap energy than titanium oxide before being irradiated with laser light. The modified titanium oxide contained in the light absorbing portion 32 also has a smaller band gap energy than titanium oxide contained in the light reflecting portion 31. The titanium oxide before being irradiated with laser light is, for example, titanium oxide having a rutile crystal structure.

[0036] <Second structure> The second structure 102 is disposed on the first structure 101. The second structure 102 has a plurality of wavelength conversion members 40 and a second resin portion 50. The plurality of wavelength conversion members 40 are integrally held by the second resin portion 50.

[0037] (Wavelength conversion material) Each of the multiple wavelength conversion members 40 is disposed on each light-emitting section 20. The wavelength conversion members 40 convert the wavelength of at least a portion of the light emitted by the light-emitting section 20. The light-emitting device 1 emits light that is a mixture of the light emitted by the light-emitting section 20 and the light whose wavelength has been converted by the wavelength conversion members 40.

[0038] The distance between two adjacent light emitting sections 20 among the plurality of light emitting sections 20 can be set to 1 μm or more and 15 μm or less. By setting the distance between two adjacent light emitting sections 20 to a small distance as described above, it becomes possible to use a larger light emitting section 20, assuming that the planar area of ​​the light emitting device 1 and the number of light emitting sections 20 are the same. This improves the light extraction of the light emitting device 1. The distance between two adjacent wavelength converting members 40 among the plurality of wavelength converting members 40 is set to 10 μm or more and 80 μm or less, and can be set to 15 μm or more and 40 μm or less.

[0039] 1, in plan view, the shape of the light emitting section 20 and the shape of the wavelength conversion member 40 can be rectangular. The length of the long side of the light emitting section 20 is, for example, 100 μm or more and 2000 μm or less, or 200 μm or more and 1000 μm or less. The length of the long side of the wavelength conversion member 40 is, for example, 150 μm or more and 950 μm or less. When the shape of the light emitting section 20 and the shape of the wavelength conversion member 40 are square, the long side of the light emitting section 20 or the wavelength conversion member 40 may be replaced with one side of the light emitting section 20 or the wavelength conversion member 40.

[0040] In plan view, the outer edge 40E of the wavelength conversion member 40 is located inside the outer edge 20E of the light emitting section 20. As a result, each light emitting section 20 can emit light with a narrow angle with reduced light spread, compared to when the outer edge 40E of the wavelength conversion member 40 coincides with the outer edge 20E of the light emitting section 20 or is located outside the outer edge 20E of the light emitting section 20 in plan view. In addition, in plan view, the wavelength conversion member 40 is arranged at a position that does not overlap with the light absorbing section 32. As a result, it is possible to reduce the light that has been wavelength converted or reflected by the wavelength conversion material or light diffusing material contained in the wavelength conversion member 40 returning to the light emitting section 20 side, and the absorption of a part of the light by the light absorbing section 32. As a result, it is possible to improve the light extraction efficiency of the light emitting device 1. Note that, in plan view, the outer edge 40E of the wavelength conversion member 40 may coincide with the outer edge 20E of the light emitting section 20 or be located outside the outer edge 20E of the light emitting section 20.

[0041] The light emitting device 1 may further include a bonding member 80 that bonds the pair of electrode parts 22 of the light emitting part 20 to the pair of first wiring parts 11 of the substrate 10 corresponding thereto. The electrode parts 22 and the first wiring part 11 are electrically connected via the bonding member 80. For example, a gold-tin alloy may be used as the material of the bonding member 80. When a gold-tin alloy is used as the material of the bonding member 80, the contact area between the electrode parts 22 and the bonding member 80 can be made larger than when the electrode parts 22 and the first wiring part 11 are bonded to each other by gold bumps. This can reduce the electrical resistance or thermal resistance between the electrode parts 22 and the first wiring part 11, and can increase the bonding strength between the electrode parts 22 and the first wiring part 11. As shown in FIG. 3, the area of ​​the bonding member 80 in contact with the electrode parts 22 in a plan view can be, for example, 70% or more of the area of ​​the electrode parts 22. The bonding member 80 may be a known bonding member such as a gold bump.

[0042] As shown in FIG. 2, the wavelength conversion member 40 may have a phosphor layer 41 arranged on the first surface 21A of the semiconductor structure 21, a light diffusion layer 42 arranged on the phosphor layer 41, and a light-transmitting layer 43 arranged on the light diffusion layer 42.

[0043] The phosphor layer 41 includes, for example, a resin base material similar to that of the first resin portion 30, and a wavelength converting material. As the wavelength converting material, for example, an yttrium-aluminum-garnet phosphor (for example, (Y,Gd) 3 (Al,Ga) 5 O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu 3 (Al,Ga) 5 O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb 3 (Al,Ga) 5 O 12 :Ce), CCA phosphors (e.g., Ca 10 (PO 4 ) 6 Cl 2 :Eu), SAE phosphors (e.g., Sr 4 Al 14 O25 : Eu), chlorosilicate-based phosphors (e.g., Ca 8 MgSi 4 O 16 Cl 2 : Eu), silicate-based phosphors (e.g., (Ba, Sr, Ca, Mg) 2 SiO 4 : Eu), β-sialon-based phosphors (e.g., (Si, Al) 3 (O, N) 4 : Eu) or α-sialon-based phosphors (e.g., Ca(Si, Al) 12 (O, N) 16 : Eu), etc., oxynitride-based phosphors, LSN-based phosphors (e.g., (La, Y) 3 Si 6 N 11 : Ce), BSESN-based phosphors (e.g., (Ba, Sr) 2 Si 5 N 8 : Eu), SLA-based phosphors (e.g., SrLiAl 3 N 4 : Eu), CASN-based phosphors (e.g., CaAlSiN 3 : Eu) or SCASN-based phosphors (e.g., (Sr, Ca)AlSiN 3 : Eu), etc., nitride-based phosphors, KSF-based phosphors (e.g., K 2 SiF 6 : Mn), KSAF-based phosphors (e.g., K 2 (Si 1-x Al x )F 6-x : Mn Here, x satisfies 0 < x < 1.) or MGF-based phosphors (e.g., 3.5MgO·0.5MgF 2 ·GeO 2 : Mn), etc., fluoride-based phosphors, quantum dots having a perovskite structure (e.g., (Cs, FA, MA)(Pb, Sn)(F, Cl, Br, I) 3 Here, FA and MA represent formamidinium and methylammonium, respectively.), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag, Cu)(In, Ga)(S, Se) 2) etc. can be used.

[0044] The phosphor layer 41 may contain one type of wavelength converting material, or may contain multiple types of wavelength converting materials.

[0045] The light diffusion layer 42 diffuses the light emitted by the light emitting section 20 and the light whose wavelength has been converted by the phosphor layer 41. The light diffusion layer 42 may contain, for example, a resin base material similar to that of the first resin section 30 and a light diffusion material. For example, titanium oxide or silicon oxide may be used as the light diffusion material. The light diffusion layer 42 allows the body color of the wavelength conversion member 40 and the body color of the second resin section 50 to be close to each other when the light emitting device 1 is viewed from the light emitting surface side during non-light emission, and the light emitting device has an excellent appearance during non-light emission. The concentration of the light diffusion material in the light diffusion layer 42 is preferably lower than the concentration of the light reflective material in the second resin section 50. This makes it easier to extract light from the wavelength conversion member 40.

[0046] The light-transmitting layer 43 may contain, for example, the same resin base material as the first resin section 30. The light-transmitting layer 43 does not contain a light diffusing material. The light-transmitting layer 43 has a higher transmittance than the light diffusing layer 42 for the light emitted by the light-emitting section 20 and the light whose wavelength has been converted by the phosphor layer 41.

[0047] (Second resin part) The second resin section 50 is disposed between the multiple wavelength conversion members 40. The second resin section 50 has light reflectivity for light emitted by the light emitting section 20 and light whose wavelength has been converted by the wavelength conversion member 40. The second resin section 50 may have a configuration similar to that of the light reflecting section 31 of the first resin section 30, for example. Furthermore, the second resin section 50 may contain, as the light reflective material, not limited to metal oxide, but silicon oxide or the like.

[0048] By providing the second resin section 50 between adjacent wavelength conversion members 40, when one light-emitting section 20 emits light and the light-emitting section 20 adjacent to the one light-emitting section 20 does not emit light, it is possible to reduce the occurrence of light emission from the wavelength conversion material contained in the wavelength conversion member 40 on the non-light-emitting section 20 due to the light being incident on the wavelength conversion member 40 on the non-light-emitting section 20. This makes it possible to provide a light-emitting device 1 with high contrast.

[0049] The second resin section 50 is disposed on the light absorbing section 32. This can reduce the appearance of the area between the adjacent light emitting sections 20 as black when the adjacent light emitting sections 20 are both emitting light, for example, when the body color of the light absorbing section 32 is black or the like. In addition, compared to when the second resin section 50 is not disposed or when the second resin section 50 is translucent, the light absorbing section 32 is not visible in a plan view of the light emitting device 1, so that the light emitting device can have an excellent appearance when not emitting light. A light emitting device having an excellent appearance is, for example, a light emitting device having a simple appearance with few colors. For example, when the light emitting device 1 is used as a flash light source in a mobile communication terminal, the light emitting device 1 can be viewed from the outside of the housing. In this case, if the light emitting device 1 is a light emitting device having a simple appearance, the design freedom of the mobile communication terminal is improved without impairing the appearance of the entire mobile communication terminal.

[0050] 2, the second resin section 50 does not cover the outer surface of the wavelength conversion member 40 located at the outermost position in a plan view. However, the light emitting device of the present disclosure is not limited to this, and the second resin section 50 may cover the outer surface of the wavelength conversion member 40 located at the outermost position in a plan view.

[0051] The light emitting device 1 may further include a third resin part 60 that covers at least a side surface of the first resin part 30 and a part of the upper surface of the substrate 10. The third resin part 60 is disposed on an outer peripheral part 10C on the upper surface of the substrate 10 where the first resin part 30 and the light emitting part 20 are not disposed, and covers the outermost side surface of the first resin part 30. The third resin part 60 has optical reflectivity for light emitted by the light emitting part 20 and light whose wavelength has been converted by the wavelength conversion member 40. The third resin part 60 can further reduce emission of light outside the area where the multiple light emitting parts 20 are disposed (non-light emitting area), and can provide a light emitting device 1 with high contrast.

[0052] The third resin part 60 can be further positioned outside the plurality of wavelength conversion members 40 in plan view. The third resin part 60 is disposed on the first resin part 30 and on the outer peripheral part 10C of the upper surface of the substrate 10 outside the plurality of wavelength conversion members 40, and covers the outermost side surface of the wavelength conversion member 40. This can reduce the emission of light to the outside of the region (non-light emitting region) where the plurality of wavelength conversion members 40 are disposed, and can provide a light emitting device 1 with high contrast. In addition, the third resin part 60 can be configured similarly to the second resin part 50, for example. This can make the body color of the second resin part 50 and the body color of the third resin part 60 closer to each other in plan view, and can provide a light emitting device with excellent appearance when not emitting light.

[0053] The light emitting device 1 may further include a light-transmitting adhesive layer 70 disposed between the first structure 101 and the second structure 102. The adhesive layer 70 continuously covers the upper surface 20A of each light emitting portion 20 and the upper surface of the light absorbing portion 32. The adhesive layer 70 bonds the light emitting portion 20 and the wavelength converting member 40, and bonds the first resin portion 30 and the second resin portion 50.

[0054] The adhesive layer 70 is translucent to the light emitted by the light emitting section 20 so that the light emitted by the light emitting section 20 is incident on the wavelength conversion member 40. The material of the adhesive layer 70 may be, for example, a thermoplastic resin such as acrylic, polycarbonate, cyclic polyolefin, polyethylene terephthalate, or polyester, or a thermosetting resin such as epoxy or silicone. The thickness of the adhesive layer 70 is, for example, 1 μm or more and 15 μm or less, or 5 μm or more and 10 μm or less.

[0055] The adhesive layer 70 can further cover the upper surface of the first resin portion 30 located outside the plurality of light-emitting portions 20 in a plan view. The light-absorbing portion 32 may be further disposed below the adhesive layer 70 that covers the upper surface of the first resin portion 30 located outside the plurality of light-emitting portions 20. In other words, the adhesive layer 70 may be disposed on the light-absorbing portion 32. This allows the light emitted by the light-emitting portion 20 to be absorbed by the light-absorbing portion 32 in the region outside the plurality of light-emitting portions 20. Furthermore, the light propagating through the translucent adhesive layer 70 can be absorbed by the light-absorbing portion 32. This allows the light emitted to the region outside the plurality of light-emitting portions 20 to be reduced, resulting in a light-emitting device 1 with high contrast.

[0056] When the aforementioned third resin part 60 is provided, the third resin part 60 can be bonded to the first resin part 30 by an adhesive layer 70 located outside the multiple light-emitting parts 20, and the third resin part 60 can be bonded to the outer periphery 10C of the upper surface of the substrate 10.

[0057] By not disposing the first resin part 30 on the outer periphery 10C of the upper surface of the substrate 10, the adhesive layer 70 can be disposed continuously and bent on the outer periphery 10C of the upper surface of the substrate 10, the side surface (the outermost surface of the first resin part 30) of the first structure 101, and the upper surface of the first structure 101 in a cross-sectional view. The cross section here refers to, for example, a cross section obtained by cutting the light emitting device 1 along a plane that passes through the center of the light emitting device 1 and extends in one of the first direction X and the second direction Y along which the multiple light emitting parts 20 are aligned. By bending the adhesive layer 70 along a step between the outer periphery 10C of the upper surface of the substrate 10 and the upper surface 30A of the first resin part 30, it is possible to make it difficult for light propagating in the translucent adhesive layer 70 to be emitted to the outside of the light emitting device 1 from the end 70E of the adhesive layer 70.

[0058] Note that in the light emitting device 1, the lower surface of the wavelength conversion member 40 and the upper surface 21A of the semiconductor structure 21 may be directly bonded to each other without using the adhesive layer 70. For example, as described below, a layer located under the wavelength conversion member 40 is made of a softenable material. Thereby, when the second structure 102 is disposed on the first structure 101, the layer may be softened and hardened to bond the first structure 101 and the second structure 102 to each other.

[0059] Next, a method for manufacturing the light emitting device according to the first embodiment will be described with reference to FIGS. 4A to 6D.

[0060] The method for manufacturing the light emitting device according to the first embodiment includes the steps of preparing a structure, preparing a mold, arranging the first resin portion, and removing the element substrate from the light source portion.

[0061] <Step of preparing the structure> As shown in FIG. 4A and FIG. 4B, the structure 100 has a substrate 10 and a light source unit 103 arranged on the substrate 10. As described above, the substrate 10 has a plurality of pairs of first wiring units 11 on the upper surface. The light source unit 103 has an element substrate 200 and a plurality of light emitting units 20. The plurality of light emitting units 20 are arranged on the element substrate 200 at a distance from each other in the first direction X and the second direction Y. As described above, each light emitting unit 20 has a semiconductor structure 21 and a pair of electrode units 22 arranged on the second surface 21B of the semiconductor structure 21. The semiconductor structure 21 is formed on the element substrate 200 by, for example, MOCVD (metal organic chemical vapor deposition). After a semiconductor film is grown on the element substrate 200, the semiconductor film is separated into a plurality of semiconductor structures 21 on the element substrate 200 by, for example, etching such as RIE (Reactive Ion Etching). The first surface 21A of the semiconductor structure 21 faces the element substrate 200. The pair of electrode portions 22 are electrically connected to the pair of first wiring portions 11 of the substrate 10 via, for example, the bonding members 80 described above.

[0062] <Process of preparing the mold> As shown in Fig. 4C, the mold 300 has an upper mold 301 and a lower mold 302. The upper mold 301 has a recess 301A. Note that in Figs. 4C and 4D, the second wiring portion 12 on the lower surface of the substrate 10 in the structure 100 arranged in the mold 300 is omitted from illustration.

[0063] <Step of placing the first resin part> The structure 100 is placed between an upper metal mold 301 and a lower metal mold 302. The structure 100 is supported on the lower metal mold 302 with the lower surface of the substrate 10 facing the upper surface of the lower metal mold 302. The light source unit 103 is placed in a recess 301A of the upper metal mold 301 with the upper surface 200A of the element substrate 200 facing upward.

[0064] Next, the upper surface 200A of the element substrate 200 is covered with the covering member 303. In the example shown in FIG. 4C, the covering member 303 is arranged on the inner wall surface of the recess 301A in advance, and at least the upper surface 200A of the element substrate 200 is covered with the covering member 303. A part of the covering member 303 extends outside the recess 301A and is sandwiched between the lower end of the upper mold 301 and the upper surface of the lower mold 302. The covering member 303 embeds at least the upper portion of the element substrate 200. Specifically, the covering member 303 may cover the upper surface 200A of the element substrate 200, as well as the upper portion 200C1 located on the upper surface 200A side of the side surface 200C of the element substrate 200. The covering member 303 may further cover the lower portion 200C2 located on the lower surface 200B side of the side surface 200C of the element substrate 200. The lower surface 200B of the element substrate 200 and the second surface 21B of the semiconductor structure 21 are not covered by the covering member 303 and are exposed to the space in the mold 300. The covering member 303 is, for example, a resin film made of a fluorine-based material. The thickness of the covering member 303 is, for example, 100 μm or more and 300 μm or less. When the covering member 303 is a resin film, the covering member 303 is made of a resin film thicker than a conventional resin film (for example, a release resin film used in mold molding), thereby improving the unevenness-following ability of the covering member 303. This can reduce the resin material 130 from flowing into between the upper surface 200A of the element substrate 200 and the covering member 303.

[0065] With at least the upper surface 200A of the element substrate 200 covered with the covering member 303, as shown in FIG. 4D, the resin material 130 having fluidity is supplied into the mold 300. For example, the liquid resin material 130 is supplied into the mold 300. After this, the resin material 130 is cured, for example, by heating. Furthermore, after the resin material 130 is cured, the upper mold 301 is moved upward, and the covering member 303 is removed. Thereby, as shown in FIG. 4E, the first resin portion 30 in which the resin material 130 is cured is disposed at least between the second surface 21B of each semiconductor structure 21 and the upper surface of the substrate 10. The first resin portion 30 may further be disposed between the lower surface 200B of the element substrate 200 and the upper surface of the substrate 10. The first resin portion 30 disposed between the lower surface 200B of the element substrate 200 and the upper surface of the substrate 10 can cover the side surface of the light emitting portion 20.

[0066] The first resin part 30 is formed by, for example, a transfer molding method or a compression molding method. For example, when forming the first resin part 30 by the compression molding method, the substrate 10 is placed on the upper surface of a lower mold, and then the resin material 130 having fluidity is placed on the upper surface of the substrate 10. Thereafter, the upper mold is closed to mold the uncured resin material 130 while compressing it.

[0067] <Step of removing the element substrate from the light source unit> After the first resin portion 30 is disposed, the element substrate 200 is removed from the light source portion 103. As shown in Fig. 4F, in the first structure 101 after the element substrate 200 is removed, the first surface 21A of the semiconductor structure 21 and the upper surface 30A of the first resin portion 30 are exposed.

[0068] In the step of preparing the structure 100, for example, the element substrate 200 is a sapphire substrate, and the semiconductor structure 21 contains gallium nitride (GaN). In this case, in the step of removing the element substrate 200 from the light source unit 103, the element substrate 200 can be removed by, for example, a laser lift-off method.

[0069] In the laser lift-off method, a laser beam is irradiated from the upper surface 200A side of the element substrate 200 toward the first surface 21A of the semiconductor structure 21 (the interface between the lower surface 200B of the element substrate 200 and the first surface 21A of the semiconductor structure 21). The laser beam has a wavelength that is transmitted through the element substrate 200 and is in an absorption region for the semiconductor structure 21. The laser beam is, for example, light having an emission peak wavelength of 190 nm or more and 380 nm or less. Gallium nitride absorbs the energy of the laser beam and is thermally decomposed. The irradiation of the laser beam causes gallium nitride to be decomposed into nitrogen and gallium on the first surface 21A, and the element substrate 200 is peeled off from the semiconductor structure 21. At this time, the gas (nitrogen gas) generated during the decomposition can peel off the element substrate 200 from a part of the first resin portion 30.

[0070] In the step of disposing the first resin portion 30 described with reference to FIG. 4D, since the upper surface 200A of the element substrate 200 is covered with the covering member 303, the first resin portion 30 is not disposed on the upper surface 200A of the element substrate 200. Or, even if the resin material 130 flows and enters between the upper surface 200A of the element substrate 200 and the covering member 303, the amount of the first resin portion 30 disposed on the upper surface 200A of the element substrate 200 can be reduced compared to the case where the covering member 303 is not used. Since the first resin portion 30 is not disposed on the upper surface 200A of the element substrate 200, or the amount of the first resin portion 30 disposed on the upper surface 200A of the element substrate 200 can be reduced, it is possible to reduce the absorption or scattering of the laser light by the first resin portion 30 on the upper surface 200A of the element substrate 200 during the above-mentioned laser lift-off method. This can reduce the unevenness of the irradiation of the laser light, and the element substrate 200 can be easily removed from the light source unit 103.

[0071] When the resin material 130 flows and enters between the upper surface 200A of the element substrate 200 and the covering member 303, it is preferable to include a step of removing the first resin portion 30 arranged on the upper surface 200A of the element substrate 200. For example, the first resin portion 30 arranged on the upper surface 200A of the element substrate 200 can be removed by a wet blasting method. In the wet blasting method, a solution containing an abrasive is sprayed toward the upper surface 200A of the element substrate 200, and the first resin portion 30 arranged on the upper surface 200A of the element substrate 200 can be removed by the impact force. When the amount of the first resin portion 30 arranged on the upper surface 200A of the element substrate 200 is large, the removal efficiency of the first resin portion 30 can be increased by increasing the spraying force of the solution containing an abrasive. However, when the spraying force of the solution containing an abrasive is increased, the upper surface 200A of the element substrate 200 is easily scratched, and the laser light during the laser lift-off method is easily scattered or reflected by the upper surface 200A of the element substrate 200. As a result, a part of the semiconductor layer may remain undecomposed at the interface between the lower surface 200B of the element substrate 200 and the first surface 21A of the semiconductor structure 21. If the element substrate 200 is removed in this state, stress may be applied to the part of the semiconductor layer that remains undecomposed, which may cause chipping or the like in the semiconductor layer.

[0072] According to this embodiment, in the step of arranging the first resin portion 30, by covering the upper surface 200A of the element substrate 200 with the covering member 303, even if the resin material 130 is arranged on the upper surface 200A of the element substrate 200, the amount of the resin material 130 can be reduced. Therefore, the spray force of the solution containing the abrasive can be weakened, the upper surface 200A of the element substrate 200 is less likely to be scratched, and scattering or reflection of the laser light on the upper surface 200A of the element substrate 200 during the laser lift-off method can be reduced. This reduces unevenness in the irradiation of the laser light, and the element substrate 200 can be easily removed from the light source unit 103.

[0073] Silicone resin or epoxy resin can be used as the material of the first resin part 30 suitable for peeling off the element substrate 200 by the laser lift-off method. After irradiation with the laser light, the element substrate 200 can be lifted upward by, for example, sucking with a nozzle, and peeled off from the light emitting part 20 and the first resin part 30. At this time, the first resin part 30 can also be lifted upward by being pulled by the element substrate 200. As a result, the force when the first resin part 30 is lifted is applied to the outer periphery of the semiconductor structure 21, and chipping can occur in the outer periphery of the semiconductor structure 21. Since the adhesive strength of the silicone resin to the element substrate 200 is weaker than that of the epoxy resin, when the silicone resin is used as the material of the first resin part 30, it is less likely to be pulled by the element substrate 200 compared to the case where the epoxy resin is used, and chipping can be less likely to occur in the outer periphery of the semiconductor structure 21. Preferably, a silicone modified resin such as SMC resin can be used as the silicone resin. Silicon modified resin such as SMC resin has a higher hardness than epoxy resin. Therefore, when a silicone modified resin such as SMC resin is used as the material for the first resin portion 30, the material is more resistant to the impact when peeling off the element substrate 200 than when an epoxy resin is used, and cracks are less likely to occur in the first resin portion 30.

[0074] In the laser lift-off method, the laser light is also irradiated onto the upper surface 30A of the first resin portion 30. This makes it possible to form the above-mentioned light absorbing portion 32 on the upper surface 30A side of the first resin portion 30. The metal oxide (e.g., titanium oxide) contained in the first resin portion 30 absorbs the energy of the laser light and changes, so that the light absorbing portion 32 with high light absorption properties is formed on the upper surface 30A side of the first resin portion 30.

[0075] This makes it possible to obtain the first structure 101. In this specification, a structure that has undergone a polishing process or a roughening process, which will be described later and is carried out after the process of removing the element substrate from the light source unit, may also be described as the first structure 101. The above-mentioned structure 100 and first structure 101 may be prepared by transfer, including purchase.

[0076] <Step of Removing Part of the First Surface Side of the Semiconductor Structure and Part of the First Resin Portion> The method for manufacturing the light emitting device according to the first embodiment may further include a step of removing a part of the first surface 21A side of the semiconductor structure 21 and a part of the first resin portion 30 after removing the element substrate 200.

[0077] When removing the element substrate 200, cracks may occur on the first surface 21A of the semiconductor structure 21. If cracks occur on the first surface 21A of the semiconductor structure 21, the light emitting characteristics of the light emitting section 20 may deteriorate, and the cracks may spread during operation of the light emitting device 1, causing the light emitting section 20 to stop lighting. Therefore, after removing the element substrate 200, it is preferable to remove cracks on the first surface 21A of the semiconductor structure 21 by removing a part of the first surface 21A side of the semiconductor structure 21 (a part in the thickness direction).

[0078] For example, while a processing liquid is dripped onto the first surface 21A of the semiconductor structure 21 and the upper surface 30A of the first resin part 30, a rotating disk-shaped polishing member is brought into contact with the first surface 21A of the semiconductor structure 21 and the upper surface 30A of the first resin part 30 to polish and remove a part of the first surface 21A side of the semiconductor structure 21. At this time, a part of the upper surface 30A side of the first resin part 30 is also polished and removed at the same time. The polishing member includes a soft grindstone. This can reduce roughness and chipping of the first surface 21A of the semiconductor structure 21 compared to the case where a polishing member including a hard grindstone is used.

[0079] A disk-shaped polishing member is used to simultaneously polish the first surface 21A of the semiconductor structure 21 and the upper surface 30A of the first resin portion 30. The polishing amount is, for example, 30% or less of the thickness of the semiconductor structure 21 before polishing. After polishing, the first surface 21A of the semiconductor structure 21 and the upper surface 30A of the first resin portion 30 are located on the same plane.

[0080] Note that, instead of carrying out the above-mentioned polishing step, for example, when the first resin portion 30 has a convex portion on the upper surface 30A side, the convex portion may be removed by blade processing or laser processing.

[0081] <Surface roughening treatment for the first surface of the semiconductor structure> In the manufacturing method of the light emitting device according to the first embodiment, after the above-mentioned polishing step, a roughening treatment can be performed on the first surface 21A of the semiconductor structure 21. This can improve the light extraction efficiency from the first surface 21A of the semiconductor structure 21. The arithmetic mean roughness of the first surface 21A before the roughening treatment is, for example, 0 μm or more and less than 0.5 μm, and the arithmetic mean roughness of the first surface 21A after the roughening treatment is, for example, 0.5 μm or more and 10 μm or less. The roughening treatment can be performed by, for example, an RIE method using a gas containing chlorine or wet etching using an alkaline solution such as TMAH (tetramethylammonium hydroxide).

[0082] <Step of placing the second structure> Next, the manufacturing method of the light emitting device according to the first embodiment further includes a step of arranging a second structure 102 on the first surface 21A of the semiconductor structure 21 in the first structure 101 obtained after removing the element substrate 200, as shown in Fig. 6B. The second structure 102 has a plurality of wavelength conversion members 40 and a second resin portion 50 that holds the plurality of wavelength conversion members 40 and is arranged between the plurality of wavelength conversion members 40. As described above, the wavelength conversion member 40 has a phosphor layer 41 arranged on the first surface 21A of the semiconductor structure 21, a light diffusion layer 42 arranged on the phosphor layer 41, and a light transmitting layer 43 arranged on the light diffusion layer 42.

[0083] The second structure 102 can be prepared by acquisition, including purchase, etc. Alternatively, the process of preparing the second structure 102 can include the steps shown in Figures 5A to 5D.

[0084] 5A, the wavelength conversion sheet 140 is disposed on the supporting part 400. The wavelength conversion sheet 140 has a phosphor layer 41 disposed on the supporting part 400, a light diffusion layer 42 disposed on the phosphor layer 41, and a light transmitting layer 43 disposed on the light diffusion layer 42.

[0085] 5B, the wavelength conversion sheet 140 is separated into a plurality of wavelength conversion members 40. For example, grooves 140A are formed in the wavelength conversion sheet 140 by blade processing or laser processing, and the wavelength conversion sheet 140 is separated into a plurality of wavelength conversion members 40. The grooves 140A penetrate the phosphor layer 41, the light diffusion layer 42, and the light transmitting layer 43, and reach the upper surface of the supporting part 400.

[0086] 5C, the second resin portion 50 is disposed on the supporting portion 400 so as to cover the multiple wavelength conversion members 40. The second resin portion 50 is formed by compression molding using a mold or the like. The second resin portion 50 is also disposed in the groove 140A in contact with the supporting portion 400. The second resin portion 50 shown in FIG. 5C also covers the upper surface of the light transmitting layer 43.

[0087] 5D , the second resin portion 50 is cut by, for example, blade processing or laser processing, to separate the structure 500 on the support portion 400 into a plurality of second structures 102. In the second structures 102, the second resin portion 50 is disposed between adjacent wavelength conversion members 40 and covers the upper surface of the light transmitting layer 43, which is the upper surface of the wavelength conversion member 40.

[0088] In the step of forming the groove 140A, the groove 140A may reach a part of the support portion 400, and a depression may be formed on the upper surface of the support portion 400. In this case, in the step of disposing the second resin portion 50, the second resin portion 50 may be disposed in the depression. For this reason, the support portion 400 may be removed from the structure 500 shown in FIG. 5C or the second structure 102 shown in FIG. 5D, and the second resin portion 50 disposed in the depression on the side from which the support portion 400 has been removed (the phosphor layer 41 side) may be removed by grinding or the like. This can reduce the tilted position of the second structure 102 when the phosphor layer 41 side of the second structure 102 is disposed on the first structure 101 so as to face each other.

[0089] As a modified example, when the second structure 102 is disposed on the first structure 101, a support substrate such as glass may be disposed on the upper surface side (light-transmitting layer 43 side) of the second structure 102. The support substrate such as glass is disposed on the upper surface of the second structure 102 obtained in FIG. 5D, for example. When the second resin portion 50 is formed by compression molding or the like, warping may occur in the second structure 102 due to the difference in linear expansion coefficient between the wavelength conversion member 40 and the second resin portion 50. Therefore, by disposing a support substrate such as glass on the upper surface side of the second structure 102, the second structure 102 can be disposed on the first structure 101 with reduced warping.

[0090] <Process of placing the third resin part on the substrate> The manufacturing method for the light emitting device according to the first embodiment can further include a step of arranging, on the substrate 10, a third resin part 60 covering the first structure 101 and the second structure 102, as shown in Fig. 6C, after arranging the second structure 102. The third resin part 60 shown in Fig. 6C also covers the upper surface of the second resin part 50 which covers the upper surface of the light transmitting layer 43.

[0091] <Step of simultaneously removing the third resin portion, the second resin portion covering the upper surface of the light transmitting layer, and a part of the upper surface side of the light transmitting layer> The manufacturing method of the light emitting device according to the first embodiment may further include a step of simultaneously removing the third resin part 60, the second resin part 50 covering the upper surface of the light transmitting layer 43, and a part of the upper surface side of the light transmitting layer 43. Note that "simultaneously" here means that the third resin part 60, the second resin part 50 covering the upper surface of the light transmitting layer 43, and a part of the upper surface side of the light transmitting layer 43 are removed during a series of operations from the start of removal to the end of removal. For example, the third resin part 60, the second resin part 50 covering the upper surface of the light transmitting layer 43, and a part of the upper surface side of the light transmitting layer 43 are simultaneously removed from the upper surface side of the third resin part 60 using a grinding device or the like. By this step, the upper surface of the light transmitting layer 43 is exposed from the second resin part 50 and the third resin part 60, as shown in FIG. 6D. The upper surface of the light transmitting layer 43, the upper surface of the second resin part 50, and the upper surface of the third resin part 60 are located on the same plane.

[0092] In exposing the upper surface of the light-transmitting layer 43, the second resin part 50 and the third resin part 60 are simultaneously removed, so that the number of steps can be reduced compared to the case of removing each resin part. Furthermore, the thickness of the light-transmitting layer 43 is reduced by removing a part of the upper surface side of the light-transmitting layer 43. In the step of removing the second resin part 50 and the third resin part 60, the light-transmitting layer 43 functions as a layer that prevents the light diffusion layer 42 from being removed. By not removing the light diffusion layer 42, the variation in the thickness of the light diffusion layer 42 can be reduced. This reduces the variation in the light diffusion function between the light-emitting parts 20. Furthermore, in a plan view, the variation in the color of each light-emitting part 20 when not emitting light can be reduced, and a light-emitting device having an excellent appearance when not emitting light can be obtained.

[0093] Thereafter, the third resin portion 60 and the substrate 10 are cut using, for example, a blade in the area where the first resin portion 30 is not disposed, thereby separating the light emitting devices 1 shown in FIG.

[0094] In addition, in the step of placing the second structure 102 shown in FIG. 6B, the second structure 102 can be placed on the first surface 21A of the semiconductor structure 21 and on the first resin part 30 via the adhesive layer 70.

[0095] As shown in FIG. 6A, for example, a liquid adhesive layer 70 is supplied by a spray method to the upper surface of the substrate 10, the side surface of the first resin portion 30, the upper surface of the first resin portion 30, and the first surface 21A of the semiconductor structure 21, and then cured. The cured adhesive layer 70 is continuously and bent on the upper surface of the substrate 10, the side surface of the first resin portion 30, the upper surface of the first resin portion 30, and the first surface 21A of the semiconductor structure 21. As described above, the adhesive layer 70 has light transmissibility. By bending the adhesive layer 70 along the step between the upper surface of the substrate 10 and the upper surface of the first resin portion 30, it is possible to make it difficult for light propagating through the translucent adhesive layer 70 to be emitted to the outside of the light emitting device from the end of the adhesive layer 70.

[0096] In the manufacturing method of the light emitting device according to the present disclosure, the second structure 102 may be directly bonded onto the first structure 101 without using the adhesive layer 70. As an example, a layer located under the wavelength conversion member 40 may be made of a softenable material. Thereby, when the second structure 102 is arranged on the first structure 101, the layer may be softened and hardened to bond the first structure 101 and the second structure 102. For example, when preparing the second structure 102, a phosphor layer 41 in a B-stage state may be arranged under the wavelength conversion member 40. After the wavelength conversion member 40 is arranged on the semiconductor structure 21, the phosphor layer 41 is heated and hardened to a C-stage state.

[0097] In the manufacturing method of the light emitting device according to the first embodiment, the Shore hardness of the first resin part 30 after curing is preferably HSD70 or more. In addition, the difference between the linear expansion coefficient of the first resin part 30 after curing and the linear expansion coefficient of the semiconductor structure 21 is preferably 30 ppm or less. By using the first resin part 30 having the above Shore hardness, the first resin part 30 is strong against the impact when peeling off the element substrate 200, and cracks and the like can be made less likely to occur in the first resin part 30. In addition, by reducing the difference between the linear expansion coefficient of the first resin part 30 and the linear expansion coefficient of the semiconductor structure 21, when heat is applied to the semiconductor structure 21 by the laser light in the step of removing the element substrate 200, the first resin part 30 is easily deformed to follow the expansion or contraction of the semiconductor structure 21. This makes it possible to make the first resin part 30 less likely to crack.

[0098] [Second embodiment] A light emitting device 2 according to the second embodiment will be described with reference to FIGS.

[0099] 7, the light emitting device 2 according to the second embodiment has, for example, 25 light emitting sections 20. The light emitting sections 20 are arranged in a 5×5 matrix in the first direction X and the second direction Y.

[0100] In the light emitting device 2, the main difference from the second structure 102 of the light emitting device 1 of the first embodiment is the configuration of the second structure 202.

[0101] The second structure 202 has a peripheral wavelength conversion member 40A arranged outside the multiple light emitting units 20 in a plan view. The peripheral wavelength conversion member 40A has a configuration similar to that of the wavelength conversion member 40 described above, and has a phosphor layer 41, a light diffusion layer 42, and a light transmitting layer 43. In a plan view, the multiple peripheral wavelength conversion members 40A are arranged to surround the multiple light emitting units 20 and the multiple wavelength conversion members 40 on the multiple light emitting units 20. A second resin portion 50 is arranged between the peripheral wavelength conversion member 40A and the wavelength conversion member 40 adjacent to the peripheral wavelength conversion member 40A.

[0102] No light emitting section 20 is disposed below the peripheral wavelength conversion member 40A. A part (peripheral portion) of the first resin section 30 and a third resin section 60 are disposed below the peripheral wavelength conversion member 40A. The third resin section 60 covers the side surface of the first resin section 30 on the peripheral portion 10C of the upper surface of the substrate 10.

[0103] There is no light-emitting section 20 below the peripheral wavelength conversion member 40A. Therefore, light emitted by the light-emitting section 20 located inside the peripheral wavelength conversion member 40A in a plan view is blocked by the first resin section 30, the second resin section 50, and the third resin section 60, and is unlikely to enter the peripheral wavelength conversion member 40A.

[0104] Furthermore, by providing the light emitting device 2 with the peripheral wavelength conversion member 40A, the wavelength conversion member is arranged on the periphery in a plan view, and the amount of the light reflective member arranged on the periphery is reduced. Therefore, compared to a light emitting device in which only a light reflective member is arranged on the periphery, the variation in appearance between the peripheral region and the inner region surrounded by the peripheral region is mitigated, and it is possible to provide a light emitting device with an excellent appearance when not emitting light.

[0105] [Third embodiment] A light emitting device 3 according to the third embodiment will be described with reference to FIG.

[0106] Light emitting device 3 includes first structure 101 and second structure 203. Light emitting device 3 differs from light emitting device 2 of the second embodiment mainly in that notch portion 500 is formed in peripheral wavelength conversion member 40A of second structure 203, adhesive layer 70 is not disposed between first structure 101 and second structure 203, and wavelength conversion member 40 is directly bonded to light emitting section 20.

[0107] The first resin portion 30 of the first structure 101 has a first inner portion 30C located between the multiple light emitting portions 20, and a first outer circumferential portion 30D located outside the multiple light emitting portions 20 in a plan view.

[0108] The second structure 203 has a plurality of wavelength conversion members 40 and a second resin portion 50 arranged between the plurality of wavelength conversion members 40. The second resin portion 50 has a second inner portion 50C arranged on the first inner portion 30C of the first resin portion 30, and a second outer peripheral portion 50D arranged on the first outer peripheral portion 30D of the first resin portion 30.

[0109] Similar to the second embodiment, the multiple wavelength conversion members 40 have an outer wavelength conversion member 40A arranged outside the multiple light emitting units 20 in a plan view, and no light emitting unit 20 is arranged below the outer wavelength conversion member 40A. The third resin unit 50E covers the side surface of the first outer peripheral portion 30D of the first resin unit 30 on the outer peripheral portion 10C of the upper surface of the substrate 10. The outer wavelength conversion member 40A is arranged on the third resin unit 50E. In this embodiment, the second resin unit 50C, the second resin unit 50D and the third resin unit 50E are made of the same material and are connected to each other.

[0110] First, as shown in FIG. 4B, a structure 100 including a substrate 10 and a light source unit 103 is prepared. In addition, the light source unit 103 in this embodiment includes, as an example, a 5×5 light emitting unit 20. For example, the light source unit 103 is manufactured as follows. First, a monolithic substrate in a wafer state in which a plurality of light source planned units that will become the light source units 103 after singulation are connected is prepared. Each of the light source planned units includes a 5×5 light emitting unit 20 and an element substrate 200. Next, the monolithic substrate is cut and singulated to obtain a plurality of light source units 103. At this time, when the monolithic substrate is cut, a wide margin is set in the region where the monolithic substrate is cut so that the stress at the time of cutting is unlikely to affect the light emitting unit 20. In other words, in a plan view, a wide space is secured between the position where the monolithic substrate is cut and the adjacent light emitting unit 20.

[0111] Next, the first resin part 30 is disposed between the lower surface 200B of the element substrate 200 and the upper surface of the substrate 10. At this time, due to a margin set when the monolithic substrate is cut, the width of the first outer peripheral part 30D disposed on the outer peripheral part of the lower surface 200B of the element substrate 200 becomes larger than the width of the first inner part 30C located between the plurality of light emitting parts 20. For example, the width of the first inner part 30C is 1 μm or more and 30 μm or less, and the width of the first outer peripheral part 30D is 50 μm or more and 500 μm or less. Therefore, when the light absorbing part 32 is formed on the upper surface side of the first resin part 30 by the above-mentioned irradiation of the laser light, the width of the light absorbing part 32 of the first outer peripheral part 30D becomes larger than the width of the light absorbing part 32 of the first inner part 30C. As a result, in the appearance of the light emitting device when not emitting light, when viewed from the light emitting surface side, the color of the light absorbing part 32 of the first outer peripheral part 30D becomes more noticeable, and color variation may occur between the outer peripheral part and the inner part of the light emitting device.

[0112] The light emitting device 3 according to the third embodiment has a notch 500 below the peripheral wavelength conversion member 40A. By providing the notch 500 below the peripheral wavelength conversion member 40A, the width of the lower surface of the second peripheral portion 50D is increased. More specifically, the width of the lower surface of the second peripheral portion 50D disposed between the peripheral wavelength conversion member 40A and the adjacent wavelength conversion member 40 is increased. As a result, a larger area on the upper surface of the first peripheral portion 30D can be covered by the second peripheral portion 50D compared to a case where the notch 500 is not provided. It is preferable that the second peripheral portion 50D covers the entire upper surface of the light absorbing portion 32. As a result, the color of the light absorbing portion 32 of the peripheral portion when not emitting light can be made less noticeable, and the light emitting device 3 can have an excellent appearance when not emitting light. In addition, in the cross-sectional view shown in FIG. 9, by providing the notch portion 500 only below the peripheral wavelength conversion member 40A, in other words, by not providing the notch portion 500 above the peripheral wavelength conversion member 40A, the width of the upper surface of the second peripheral portion 50D and the width of the upper surface of the second inner portion 50C can be made equal. In other words, by providing the notch portion 500 only below the peripheral wavelength conversion member 40A, it is possible to widen only the width of the lower surface of the second peripheral portion 50D without changing the width of the upper surface of the second peripheral portion 50D. As a result, when no light is emitted, the widths of the second resin portion 50C and the second resin portion 50D in a plan view can be made equal, and the color of the light absorbing portion 32 of the peripheral portion can be made less noticeable. As a result, it is possible to provide a light emitting device 3 that has an excellent appearance when no light is emitted.

[0113] In addition, since the volume of the second resin part 50 on the outer periphery of the first structure 101 increases, the light emitted by the light emitting part 20 located on the outside is more likely to be reflected toward the upper light emitting surface by the second outer periphery 50D of the second resin part 50. This makes it possible to reduce the light emitted from the outer surface of the peripheral wavelength conversion member 40A to the outside of the light emitting device 3.

[0114] Moreover, in this embodiment, the wavelength conversion member 40 is directly bonded to the light emitting section 20. In other words, no adhesive member or the like is disposed between the wavelength conversion member 40 and the light emitting section 20. This allows the light emitted from the light emitting section 20 to propagate inside the adhesive member and spread in the horizontal direction, reducing the emission of light to the side of the adjacent light emitting section 20. This allows a light emitting device with high contrast.

[0115] In the light emitting device 3 shown in FIG. 9, the third resin part 50E is disposed outside the first outer peripheral part 30D. The light emitting device according to the present embodiment may not include the third resin part 50E. In this case, for example, instead of the third resin part 50E, the first outer peripheral part 30D is disposed so as to reach the outer surface of the light emitting device 3. The upper surface of the first resin part 30D includes a region where the light absorbing part 32 is disposed and a region where the light absorbing part 32 is not disposed. For example, on the upper surface of the first resin part 30D, the region where the light absorbing part 32 is disposed is an inner annular region adjacent to the light emitting part 20, and the region where the light absorbing part 32 is not disposed is a region disposed outside the region where the light absorbing part 32 is disposed. In this case, the second outer peripheral part 50D is disposed on the region where the light absorbing part 32 is disposed, and the peripheral wavelength conversion member 40A is disposed on the region where the light absorbing part 32 is not disposed.

[0116] A method for manufacturing the light emitting device according to the third embodiment will be described with reference to FIGS. 10A to 10G.

[0117] The method for manufacturing the light emitting device according to the third embodiment includes a step of arranging a second structural body 203 on a first structural body 101 obtained after removing an element substrate 200, as shown in FIG. 10G.

[0118] The step of arranging the second structural body 203 includes the steps of preparing the wavelength conversion sheet 140, forming grooves in the wavelength conversion sheet 140, and arranging the second resin portion 50 in the grooves.

[0119] As shown in FIG. 10A, in the step of preparing the wavelength conversion sheet 140, the wavelength conversion sheet 140 is prepared, which has a phosphor layer 41, a light-transmitting layer 43, and a light diffusion layer 42 located between the phosphor layer 41 and the light-transmitting layer 43. In the step of preparing the wavelength conversion sheet 140, the resin material of the phosphor layer 41 is in a B-stage state, and the resin materials of the light-transmitting layer 43 and the light diffusion layer 42 are in a C-stage state. The B-stage state of the resin material of the phosphor layer 41 is maintained until the resin material of the phosphor layer 41 is cured by a second heat treatment step described later. For example, the wavelength conversion sheet 140 is obtained by laminating the uncured light diffusion layer 42 and the uncured light-transmitting layer 43 together, and then performing a heat treatment step to obtain the light diffusion layer 42 and the light-transmitting layer 43, which are in a C-stage state and integrally formed with each other. Thereafter, the phosphor layer 41 in the B-stage state is laminated to the light diffusion layer 42 side, thereby obtaining the wavelength conversion sheet 140. The wavelength conversion sheet 140 is supported by a supporting member such that the phosphor layer 41 is relatively upward. In Fig. 10A, the supporting member is not shown. The upper surface of the phosphor layer 41 is defined as a first sheet surface 140B of the wavelength conversion sheet 140. The first sheet surface 140B faces the first structure 101 in the step of arranging the second structure 203 on the first structure 101.

[0120] The manufacturing method of the light emitting device according to the present embodiment may include a first heat treatment step of heat treating the phosphor layer 41 in the wavelength conversion sheet 140 under a first condition. The resin material of the phosphor layer 41 after the first heat treatment step is in a B-stage state. By performing the first heat treatment step on the wavelength conversion sheet 140, the hardness of the phosphor layer 41 can be increased while maintaining a predetermined tack force on the surface of the phosphor layer 41. By increasing the hardness of the phosphor layer 41, it is possible to reduce the possibility of the groove portion being crushed when the groove portion is formed later with a blade or the like. The first heat treatment step can also be said to be a step of adjusting the hardness of the phosphor layer 41. In addition, by performing the first heat treatment step after the step of preparing the wavelength conversion sheet 140, in other words, after bonding the phosphor layer 41 and the light diffusion layer 42 together, the phosphor layer 41 having a higher tack force than after the first heat treatment step can be bonded to the light diffusion layer 42, so that the adhesion between the phosphor layer 41 and the light diffusion layer 42 can be improved. This can reduce the occurrence of peeling or the like at the interface between the phosphor layer 41 and the light diffusing layer 42 when the grooves are formed.

[0121] The first condition in the first heat treatment step includes a first temperature and a first heating time. For example, the first temperature can be 80° C. or more and 130° C. or less, and the first heating time can be 10 minutes or more and 120 minutes or less.

[0122] In this embodiment, for example, the tack strength of the resin material of the phosphor layer 41 after the first heat treatment step is 20% to 90% of the tack strength of the resin material of the phosphor layer 41 before the first heat treatment step.

[0123] Next, as shown in Fig. 10B and Fig. 10C, grooves are formed in the wavelength conversion sheet 140. The step of forming grooves in the wavelength conversion sheet 140 includes a step of forming a plurality of first grooves 141 in the wavelength conversion sheet 140 from the first sheet surface 140B side. As shown in Fig. 10B, the plurality of first grooves 141 extend in the first direction X and the second direction Y in a plan view. As shown in Fig. 10C, the plurality of first grooves 141 penetrate from the first sheet surface 140B through the phosphor layer 41 and the light diffusion layer 42 to reach a part of the light-transmitting layer 43. The bottom of the first groove 141 is located below the interface between the light diffusion layer 42 and the light-transmitting layer 43. Among the plurality of first grooves 141, the first grooves 141 located on the periphery in a plan view are referred to as peripheral first grooves 141A.

[0124] 10D and 10E, the step of forming grooves in the wavelength conversion sheet 140 further includes a step of forming second grooves 142 in the wavelength conversion sheet 140 from the first sheet surface 140B side, the second grooves 142 extending from the outer circumferential first grooves 141A to the outside of the outer circumferential first grooves 141A in a plan view. The depth of the second grooves 142 from the first sheet surface 140B is shallower than the depth of the first grooves 141 from the first sheet surface 140B. The bottom of the second grooves 142 is located in the phosphor layer 41.

[0125] The second groove portion 142 extends in the first direction X and the second direction Y along the outer circumferential first groove portion 141A. The second groove portion 142 extending in the second direction Y is continuous with the outer circumferential first groove portion 141A in the first direction X. The second groove portion 142 extending in the first direction X is continuous with the outer circumferential first groove portion 141A in the second direction Y. Of the multiple groove portions, the outer circumferential groove portion 143A located on the outer periphery in a plan view is composed of the outer circumferential first groove portion 141A and the second groove portion 142. Of the multiple groove portions, the inner groove portion 143B located inside the outer circumferential groove portion 143A in a plan view is composed of the first groove portion 141 and does not include the second groove portion 142. The width of the opening of the outer circumferential groove portion 143A on the first seat surface 140B side is larger than the width of the opening of the inner groove portion 143B on the first seat surface 140B side.

[0126] The first groove portion 141 and the second groove portion 142 can be formed by, for example, blade processing or laser processing.

[0127] The process of forming the first groove portion 141 and the second groove portion 142 is not limited to forming the first groove portion 141 and then forming the second groove portion 142, but the first groove portion 141 may be formed after the second groove portion 142 is formed, or the first groove portion 141 and the second groove portion 142 may be formed simultaneously.

[0128] After the first groove portion 141 and the second groove portion 142 are formed, the wavelength conversion sheet 140 is disposed on the first structure 101 as shown in Fig. 10F. In the step of disposing the wavelength conversion sheet 140 on the first structure 101, the wavelength conversion sheet 140 is disposed so that the phosphor layer 41 is located on the light emitting portion 20, the inner groove portion 143B is located on the first inner portion 30C of the first resin portion 30, and the outer circumferential groove portion 143A is located on the first outer circumferential portion 30D of the first resin portion 30. The upper surface of the first outer circumferential portion 30D faces the opening of the outer circumferential groove portion 143A.

[0129] Next, a second heat treatment step is performed in which the resin material of the phosphor layer 41 is heat-treated under second conditions to harden the resin material of the phosphor layer 41. The resin material of the phosphor layer 41 is softened from the B-stage state by heating in the second heat treatment step, and then hardened to the C-stage state. The light diffusion layer 42, which is already in the C-stage state, does not soften in the second heat treatment step. The phosphor layer 41 is fixed on the light emitting section 20 by this second heat treatment step. As a result, the light emitting section 20 and the phosphor layer 41 are directly bonded. The phosphor layer 41 and the light diffusion layer 42 are also fixed to each other. The second conditions in the second heat treatment step include a second temperature and a second heating time. For example, the second temperature can be 140° C. or more and 160° C. or less, and the second heating time can be 100 minutes or more and 200 minutes or less.

[0130] The step of arranging the second structure 203 includes a step of arranging the wavelength conversion sheet 140 on the first structure 101, and then arranging the second resin member 50 in the outer circumferential groove portion 143A and the inner groove portion 143B as shown in FIG. 10G. For example, a liquid resin material is poured into the outer circumferential groove portion 143A and the inner groove portion 143B using a mold, and then the resin material is cured by heating, and the second resin member 50 is arranged in the outer circumferential groove portion 143A and the inner groove portion 143B. The second outer circumferential portion 50D of the second resin portion 50 is arranged in the outer circumferential groove portion 143A so as to cover the entire upper surface of the light absorbing portion 32. In addition, a part of the resin material covers the side surface of the first outer circumferential portion 30D of the first resin portion 30 as a third resin portion 50E.

[0131] In the step of arranging the second structure 203, after arranging the second resin portion 50, a grinding device or the like is used to remove a portion of the surface side of the light transmitting layer 43 opposite to the light diffusing layer 42 so as to expose the second resin portion 50. As a result, the second structure 203 having the plurality of wavelength conversion members 40 and the second resin portions 50 arranged between the plurality of wavelength conversion members 40 is arranged on the first structure 101, as shown in FIG.

[0132] The step of arranging the second structure 203 may further include a step of plasma-treating the wavelength conversion sheet 140 after forming the grooves in the wavelength conversion sheet 140 and before arranging the second resin part 50 in the grooves. This can improve the filling of the second resin part 50 in the grooves. Preferably, the wavelength conversion sheet 140 is plasma-treated at the timing shown in FIG. 10F, specifically, after arranging the wavelength conversion sheet 140 on the first structure 101 and before arranging the second resin part 50 in the grooves. By performing plasma treatment immediately before arranging the second resin part 50 in the grooves, the variation in the filling of the second resin part 50 in the grooves is reduced. In this case, for example, plasma is irradiated from the upper side of the light-transmitting layer 43 in FIG. 10F to surface-treat the vicinity of the opening of the groove located on the outer surface of the wavelength conversion sheet 140. This improves the wettability in the vicinity of the opening of the groove, and the resin material that becomes the second resin part 50 is more likely to flow in from the opening of the groove. Plasma treatment is performed, for example, on the surface of a resin member, to form polar functional groups on the surface of the resin member. This improves the affinity between the resin member and other resin materials (for example, the resin material that becomes the second resin part 50), improving wettability. Furthermore, plasma treatment removes contaminated organic substances on the surface of the resin member, improving the wettability of the surface of the resin member.

[0133] The method for manufacturing the light emitting device according to the third embodiment may further include a step of removing a part of the upper surface side of the first outer periphery 30D of the first resin part 30 before arranging the second structure 203 on the first structure 101 obtained after removing the element substrate 200. This makes it possible to remove the light absorbing part 32 on the upper surface side of the first outer periphery 30D, and to obtain a light emitting device 3 that has an excellent appearance when not emitting light. For example, when the CO 2 A part of the upper surface side of the first outer peripheral portion 30D can be removed by laser processing, blade processing, or jetting of sublimating particles (e.g., solid carbon dioxide), jetting of fine particles (e.g., micro ice jet method), etc. When performing a process of removing a part of the upper surface side of the first outer peripheral portion 30D, it is not necessary to form the notch portion 500 in the outer peripheral wavelength conversion member 40A.

[0134] [Variations] In the light emitting devices according to the first to third embodiments, the first structure and the light source section have a plurality of light emitting sections. The light source section and the first structure may have only one light emitting section. That is, the light source section may have one light emitting section for one element substrate. The first structure may have a substrate, one light emitting section disposed on the upper surface of the substrate, and a first resin section that holds the light emitting section and exposes the upper surface of the light emitting section.

[0135] Embodiments of the present disclosure may include the following method for manufacturing a light emitting device and the light emitting device.

[0136] [Section 1] a step of preparing a structure having a substrate having a plurality of pairs of wiring portions on an upper surface thereof, and a light source portion having an element substrate and a plurality of light emitting portions and disposed on the substrate, wherein each of the light emitting portions is a semiconductor substrate having a first surface facing the element substrate and a second surface located opposite to the first surface, and a pair of electrode portions disposed on the second surface of the semiconductor substrate and electrically connected to the pair of wiring portions of the substrate; Providing a mold having an upper mold and a lower mold; a step of disposing the structures between the upper mold and the lower mold, supplying a resin material into the mold while covering an upper surface of the element substrate with a covering member, curing the resin material, and then removing the covering member, thereby disposing a first resin portion between the second surface of each of the semiconductor structures and the upper surface of the substrate; removing the element substrate from the light source unit; Equipped with A method for manufacturing a light emitting device. [Section 2] The step of disposing the first resin portion includes: Item 2. The method for manufacturing a light emitting device according to item 1, further comprising the step of removing the first resin portion disposed on the upper surface of the element substrate. [Section 3] 3. The method for manufacturing a light emitting device according to item 2, wherein in the step of removing the first resin portion, the first resin portion is removed by a wet blast method. [Section 4] 4. The method for manufacturing a light emitting device according to any one of items 1 to 3, further comprising the step of removing a part of the first surface side of the semiconductor structure and a part of the first resin portion after removing the element substrate. [Section 5] In the step of preparing the structure, the device substrate is a sapphire substrate, and the semiconductor structure includes gallium nitride; 5. The method for manufacturing a light emitting device according to any one of items 1 to 4, wherein in the step of removing the element substrate from the light source section, a laser beam is irradiated from the upper surface side of the element substrate toward the first surface of the semiconductor structure, thereby decomposing the gallium nitride on the first surface into nitrogen and gallium, and causing the element substrate and a portion of the first resin section to peel off due to gas generated during the decomposition. [Section 6] In the first structure obtained after removing the element substrate, a second structure is disposed on the first surface of the semiconductor structure, 6. The method for manufacturing a light emitting device according to any one of items 1 to 5, wherein the second structure has a plurality of wavelength conversion members and a second resin portion that holds the plurality of wavelength conversion members and is disposed between the plurality of wavelength conversion members. [Section 7] 7. The method for manufacturing a light emitting device according to claim 6, wherein the wavelength conversion member has a phosphor layer disposed on the first surface, a light diffusion layer disposed on the phosphor layer, and a light transmissive layer disposed on the light diffusion layer. [Section 8] the second resin portion covers an upper surface of the light-transmitting layer, a step of disposing the second structure on the first surface, and then disposing a third resin portion on the substrate to cover the first structure and the second structure; simultaneously removing the third resin portion, the second resin portion covering the upper surface of the light transmitting layer, and a portion of the upper surface side of the light transmitting layer; Item 8. The method for producing a light emitting device according to item 7, further comprising: [Section 9] In the step of disposing the second structure, the second structure is disposed on the first surface via an adhesive layer; Item 9. The method for manufacturing a light emitting device according to any one of items 6 to 8, wherein the adhesive layer is arranged by a spray method so as to be continuous and curved on the upper surface of the substrate, the side surface of the first resin portion, the upper surface of the first resin portion, and the first surface of the semiconductor structure. [Section 10] The Shore hardness of the first resin portion after curing is HSD70 or more, Item 10. The method for manufacturing a light emitting device according to any one of items 1 to 9, wherein a difference between a linear expansion coefficient of the first resin portion after curing and a linear expansion coefficient of the semiconductor structure is 30 ppm or less. [Section 11] further comprising a step of arranging a second structure on the first structure obtained after removing the element substrate; the second structure includes a plurality of wavelength conversion members and a second resin portion disposed between the plurality of wavelength conversion members, 6. A method for manufacturing a light emitting device described in any one of items 1 to 5, wherein the second resin part has a second inner part arranged on a first inner part located between the multiple light emitting parts in the first resin part, and a second outer peripheral part arranged on a first outer peripheral part located outside the multiple light emitting parts in the first resin part, and the second outer peripheral part covers the entire upper surface of the first outer peripheral part. [Section 12] The step of disposing the second structure includes: Preparing a wavelength conversion sheet; forming a groove portion in the wavelength conversion sheet; placing the second resin portion in the groove; having the step of forming the grooves includes a step of forming a plurality of first grooves from a first sheet surface side of the wavelength conversion sheet facing the first structures; forming a second groove portion from the first sheet surface side, the second groove portion extending from a peripheral first groove portion located on a peripheral edge of the plurality of first groove portions to an outside of the peripheral first groove portion and shallower than the first groove portion; Item 12. A method for producing a light-emitting device according to item 11, comprising: [Section 13] The step of disposing the second structure includes: Item 13. The method for manufacturing a light emitting device according to item 12, further comprising the step of subjecting the wavelength conversion sheet to a plasma treatment after forming the groove portion and before arranging the second resin portion. [Section 14] a first structure including a substrate, a plurality of light-emitting units arranged on an upper surface of the substrate, and a first resin portion that holds the plurality of light-emitting units and exposes upper surfaces of the light-emitting units; a second structure including a plurality of wavelength conversion members disposed on each of the light emitting sections and a second resin portion disposed between the plurality of wavelength conversion members; Equipped with the first resin portion has a light reflecting portion having high light reflectivity and a light absorbing portion disposed on the light reflecting portion and having higher light absorbing properties than the light reflecting portion; The second resin portion is disposed on the light absorbing portion. [Section 15] Item 15. The light emitting device according to item 14, wherein each of the light emitting portions has a semiconductor structure and a pair of electrode portions disposed on a lower surface of the semiconductor structure. [Section 16] Item 16. The light emitting device according to item 14 or 15, wherein the upper surface of the light emitting portion and the upper surface of the first resin portion are on the same plane on the upper surface of the first structure. [Section 17] Item 17. The light emitting device according to any one of items 14 to 16, further comprising a third resin portion covering at least a side surface of the first resin portion and a part of the upper surface of the substrate. [Section 18] a light-transmitting adhesive layer continuously covering the upper surface of each of the light-emitting portions and the upper surface of the light-absorbing portion; Item 18. The light emitting device according to any one of items 14 to 17, wherein the adhesive layer has a thickness of 1 μm or more and 15 μm or less. [Section 19] the adhesive layer further covers an upper surface of the first resin portion located outside the plurality of light emitting portions in a plan view, Item 19. The light emitting device according to item 18, wherein the light absorbing section is further disposed below the adhesive layer that covers the upper surface of the first resin section located outside the plurality of light emitting sections. [Section 20] 20. The light emitting device according to item 18 or 19, wherein the adhesive layer is disposed continuously and curvedly on a part of the upper surface of the substrate, a side surface of the first structure, and an upper surface of the first structure. [Section 21] Item 21. The light emitting device according to any one of items 14 to 20, wherein the first resin portion contains a metal oxide. [Section 22] Item 22. The light emitting device according to any one of items 14 to 21, wherein a distance between two adjacent light emitting sections among the plurality of light emitting sections is 1 μm or more and 15 μm or less. [Section 23] Item 23. The light emitting device according to any one of items 14 to 22, wherein an outer edge of the wavelength conversion member is located inside an outer edge of the light emitting portion in a plan view. [Section 24] a bonding member that bonds a pair of electrode portions of the light-emitting portion and a pair of wiring portions of the substrate; Item 24. The light emitting device according to any one of items 14 to 23, wherein an area of ​​the bonding member in contact with the electrode portion in a plan view is 70% or more of an area of ​​the electrode portion.

[0137] The above describes the embodiments of the present disclosure with reference to specific examples. However, the present disclosure is not limited to these specific examples. All forms that can be implemented by a person skilled in the art through appropriate design changes based on the above-mentioned embodiments of the present disclosure also belong to the scope of the present disclosure as long as they include the gist of the present disclosure. In addition, within the scope of the idea of ​​the present disclosure, a person skilled in the art can come up with various modified examples and examples of modifications, and these modified examples and examples of modifications also belong to the scope of the present disclosure. [Explanation of symbols]

[0138] Reference Signs List 1 to 3...light emitting device, 10...substrate, 11...first wiring portion, 12...second wiring portion, 13...insulating base material, 20...light emitting portion, 21...semiconductor structure, 21A...first surface, 21B...second surface, 22...electrode portion, 30...first resin portion, 30C...first inner portion, 30D...first outer peripheral portion, 31...light reflecting portion, 32...light absorbing portion, 40...wavelength conversion member, 41...phosphor layer, 42...light diffusing layer, 43...light transmitting layer, 50...second resin portion, 50C...second inner portion, 50D...second outer peripheral portion, 50E...third resin portion, 60...third resin portion, 70... Adhesive layer, 80... bonding member, 100... structure, 101... first structure, 102... second structure, 103... light source portion, 130... resin material, 140... wavelength conversion sheet, 140B... first sheet surface, 141... first groove portion, 141A... outer periphery first groove portion, 142... second groove portion, 143A... outer periphery groove portion, 143B... inner groove portion, 200... element substrate, 202, 203... second structure, 300... mold, 301... upper mold, 301A... recess, 302... lower mold, 303... covering member, 400... support portion, 500... notch portion

Claims

1. a step of preparing a structure having a substrate having a plurality of pairs of wiring portions on an upper surface thereof, and a light source portion having an element substrate and a plurality of light emitting portions and disposed on the substrate, wherein each of the light emitting portions is a semiconductor substrate having a first surface facing the element substrate and a second surface located opposite to the first surface, and a pair of electrode portions disposed on the second surface of the semiconductor substrate and electrically connected to the pair of wiring portions of the substrate; Providing a mold having an upper mold and a lower mold; a step of disposing the structures between the upper mold and the lower mold, supplying a resin material into the mold while covering an upper surface of the element substrate with a covering member, curing the resin material, and then removing the covering member, thereby disposing a first resin portion between the second surface of each of the semiconductor structures and the upper surface of the substrate; removing the element substrate from the light source unit; Equipped with A method for manufacturing a light emitting device.

2. The step of disposing the first resin portion includes: The method for manufacturing a light emitting device according to claim 1 , further comprising the step of removing the first resin portion disposed on the upper surface of the element substrate.

3. The method for manufacturing a light emitting device according to claim 2 , wherein in the step of removing the first resin portion, the first resin portion is removed by a wet blast method.

4. The method for manufacturing a light emitting device according to claim 1 , further comprising the step of removing a part of the first surface side of the semiconductor structure and a part of the first resin portion after removing the element substrate.

5. In the step of preparing the structure, the device substrate is a sapphire substrate, and the semiconductor structure includes gallium nitride; 4. The method for manufacturing a light emitting device according to claim 1, wherein in the step of removing the element substrate from the light source portion, laser light is irradiated from the upper surface side of the element substrate toward the first surface of the semiconductor structure, thereby decomposing the gallium nitride on the first surface into nitrogen and gallium, and causing the element substrate and a portion of the first resin portion to peel off due to gas generated during the decomposition.

6. In the first structure obtained after removing the element substrate, a second structure is disposed on the first surface of the semiconductor structure, 4. The method for manufacturing a light emitting device according to claim 1, wherein the second structure has a plurality of wavelength conversion members and a second resin portion that holds the plurality of wavelength conversion members and is arranged between the plurality of wavelength conversion members.

7. 7. The method for manufacturing a light emitting device according to claim 6, wherein the wavelength conversion member has a phosphor layer disposed on the first surface, a light diffusion layer disposed on the phosphor layer, and a light transmissive layer disposed on the light diffusion layer.

8. the second resin portion covers an upper surface of the light-transmitting layer, a step of disposing, on the substrate, a third resin portion that covers the first structure and the second structure after disposing the second structure on the first surface; simultaneously removing the third resin portion, the second resin portion covering the upper surface of the light transmitting layer, and a portion of the upper surface side of the light transmitting layer; The method for manufacturing a light emitting device according to claim 7 , further comprising:

9. In the step of disposing the second structure, the second structure is disposed on the first surface via an adhesive layer; 7. The method for manufacturing a light emitting device according to claim 6, wherein the adhesive layer is arranged continuously and curvedly on the top surface of the substrate, the side surface of the first resin portion, the top surface of the first resin portion, and the first surface of the semiconductor structure by a spray method.

10. The Shore hardness of the first resin portion after curing is HSD70 or more, 4. The method for manufacturing a light emitting device according to claim 1, wherein a difference between a linear expansion coefficient of the first resin portion after hardening and a linear expansion coefficient of the semiconductor structure is 30 ppm or less.

11. The method further includes a step of arranging a second structure on the first structure obtained after removing the element substrate, the second structure includes a plurality of wavelength conversion members and a second resin portion disposed between the plurality of wavelength conversion members, 4. A method for manufacturing a light emitting device according to claim 1, wherein the second resin part has a second inner part arranged on a first inner part located between the multiple light emitting parts in the first resin part, and a second outer peripheral part arranged on a first outer peripheral part located outside the multiple light emitting parts in the first resin part, and the second outer peripheral part covers the entire upper surface of the first outer peripheral part.

12. The step of disposing the second structure includes: Preparing a wavelength conversion sheet; forming a groove portion in the wavelength conversion sheet; disposing the second resin portion in the groove; having the step of forming the groove portions includes a step of forming a plurality of first groove portions from a first sheet surface side of the wavelength conversion sheet facing the first structures; forming a second groove portion from the first sheet surface side, the second groove portion extending from a peripheral first groove portion located on a peripheral edge of the plurality of first groove portions to an outside of the peripheral first groove portion and shallower than the first groove portion; The method for manufacturing a light emitting device according to claim 11 , comprising:

13. The step of disposing the second structure includes: The method for manufacturing a light emitting device according to claim 12 , further comprising the step of subjecting the wavelength conversion sheet to a plasma treatment after forming the groove portion and before arranging the second resin portion.

14. a first structure including a substrate, a plurality of light emitting units disposed on an upper surface of the substrate, and a first resin portion that holds the plurality of light emitting units and exposes upper surfaces of the light emitting units; a second structure including a plurality of wavelength conversion members disposed on each of the light emitting portions and a second resin portion disposed between the plurality of wavelength conversion members; Equipped with the first resin portion has a light reflecting portion having high light reflectivity and a light absorbing portion disposed on the light reflecting portion and having higher light absorbing properties than the light reflecting portion, The second resin portion is disposed on the light absorbing portion.

15. The light emitting device according to claim 14 , wherein each of the light emitting portions comprises a semiconductor structure and a pair of electrode portions disposed on a lower surface of the semiconductor structure.

16. The light emitting device according to claim 14 , wherein the upper surface of the first structure body is flush with the upper surface of the light emitting portion.

17. The light emitting device according to claim 14 , further comprising a third resin portion covering at least a side surface of the first resin portion and a portion of the upper surface of the substrate.

18. a light-transmitting adhesive layer continuously covering the upper surface of each of the light-emitting portions and the upper surface of the light-absorbing portion; 18. The light emitting device according to claim 14, wherein the adhesive layer has a thickness of 1 μm or more and 15 μm or less.

19. the adhesive layer further covers an upper surface of the first resin portion located outside the plurality of light emitting portions in a plan view, The light emitting device according to claim 18 , wherein the light absorbing portion is further disposed below the adhesive layer that covers the upper surface of the first resin portion located outside the plurality of light emitting portions.

20. The light emitting device according to claim 18 , wherein the adhesive layer is disposed continuously and curvedly on a part of the upper surface of the substrate, on a side surface of the first structure, and on the upper surface of the first structure.

21. The light emitting device according to claim 14 , wherein the first resin portion includes a metal oxide.

22. 18. The light emitting device according to claim 14, wherein a distance between two adjacent light emitting sections among the plurality of light emitting sections is not less than 1 μm and not more than 15 μm.

23. The light emitting device according to claim 14 , wherein an outer edge of the wavelength conversion member is located inside an outer edge of the light emitting portion in a plan view.

24. a bonding member that bonds a pair of electrode portions of the light-emitting portion and a pair of wiring portions of the substrate; 18. The light emitting device according to claim 14, wherein an area of ​​the bonding member in contact with the electrode portion is 70% or more of an area of ​​the electrode portion in a plan view.

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