Plasma processing apparatus

Abstract

To provide a plasma processing apparatus capable of realizing a higher density of plasma.SOLUTION: A plasma processing apparatus comprises: a processing container where at least one part is constructed by a first dielectric body; a substrate holding part that is constructed so as to hold a plurality of substrates in the processing container; an electromagnetic wave generator that is constructed so as to generate an electromagnetic wave for plasma excitation supplied into the processing container; an electromagnetic wave supply part that is constructed so as to supply the electromagnetic wave via the first dielectric body into the processing container; and a resonator array structure that is positioned in a region where the supply of the electromagnetic wave can be provided via the first dielectric body in the processing container. In the resonator array structure, it can be resonated with a magnetic-field component of the electromagnetic wave, and a size is smaller than a wavelength of the electromagnetic wave, and it is constructed so as to contain a plurality of resonators arranged on the same flat surface. The electromagnetic wave supply part supplies the magnetic-field component that is vertical to a flat surface where the plurality of resonators are arranged.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a plasma processing apparatus for performing a specified plasma processing on a workpiece, the apparatus comprising a processing vessel capable of being evacuated, a processing vessel holding means for holding the workpiece, a high frequency power supply for generating a high frequency voltage, a plasma gas supply means for supplying a plasma gas to be turned into plasma into the processing vessel, a pair of plasma electrodes connected by wiring to the output side of the high frequency power supply without being grounded in order to generate plasma in the processing vessel, and both of which are in an excited electrode state, and a high frequency matching means interposed in the middle of the wiring. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-073913 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a plasma processing apparatus capable of achieving high plasma density. [Means for solving the problem]

[0005] A plasma processing apparatus according to one embodiment of the present disclosure includes a processing vessel at least partially constructed of a first dielectric, a substrate holding unit configured to hold multiple substrates within the processing vessel, an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied into the processing vessel, an electromagnetic wave supply unit configured to supply the electromagnetic waves into the processing vessel via the first dielectric, and a resonator array structure located in a region within the processing vessel where the electromagnetic waves can be supplied via the first dielectric, wherein the resonator array structure is configured to include multiple resonators arranged on the same plane, the multiple resonators being capable of resonating with a magnetic field component of the electromagnetic wave and having a size smaller than the wavelength of the electromagnetic wave, and the electromagnetic wave supply unit supplies a magnetic field component perpendicular to the plane in which the multiple resonators are arranged. Effect of the Invention

[0006] According to the present disclosure, high density plasma can be achieved. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a schematic cross-sectional view showing an example of the configuration of the plasma processing apparatus according to the first embodiment. [Diagram 3] FIG. 3 is a diagram showing an example of the configuration of a resonator array structure according to the first embodiment. [Figure 4] FIG. 4 is a cross-sectional view showing an example of the AA cross section of FIG. [Diagram 5] FIG. 5 is a diagram showing an example of a plane view and a BB cross section of a single resonator according to the first embodiment. [Figure 6] FIG. 6 is a cross-sectional view showing an example of the CC cross section of FIG. [Figure 7] FIG. 7 is a cross-sectional view showing an example of the cross section taken along the line DD in FIG. [Figure 8] FIG. 8 is an explanatory diagram showing an example of calculation of the resonant frequency of the resonator according to the first embodiment. [Figure 9]FIG. 9 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the first modification. [Figure 10] FIG. 10 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second modification. [Figure 11] FIG. 11 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second modification. [Figure 12] FIG. 12 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the third modification. [Figure 13] FIG. 13 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the fourth modification. [Figure 14] FIG. 14 is a schematic vertical sectional view showing an example of the configuration of a plasma processing apparatus according to the fifth modification. [Figure 15] FIG. 15 is a diagram showing an example of the configuration of a resonator array structure according to the sixth modification. [Figure 16] FIG. 16 is a diagram showing an example of the configuration of a resonator array structure according to the seventh modification. [Figure 17] FIG. 17 is a diagram showing an example of the configuration of a resonator array structure according to the eighth modification. [Figure 18] FIG. 18 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second embodiment. [Figure 19] FIG. 19 is a diagram showing an example of the configuration of a resonator array structure according to the second embodiment. [Figure 20] FIG. 20 is a diagram illustrating an example of the configuration of a resonator according to the second embodiment. [Figure 21] FIG. 21 is a diagram illustrating an example of the configuration of a resonator according to the second embodiment. [Figure 22] FIG. 22 is a diagram showing another example of the configuration of the resonator according to the second embodiment. In FIG. [Figure 23] FIG. 23 is a diagram illustrating an example of a cross section of the resonator according to the second embodiment. [Figure 24] FIG. 24 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the ninth modification. [Diagram 25]FIG. 25 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the tenth modification. [Figure 26] FIG. 26 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the eleventh modification. [Figure 27] FIG. 27 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the twelfth modification. [Figure 28] FIG. 28 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the thirteenth modification. [Figure 29] FIG. 29 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the fourteenth modification. [Diagram 30] FIG. 30 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus in accordance with the fifteenth modification. [Diagram 31] FIG. 31 is a schematic vertical sectional view showing an example of the configuration of a plasma processing apparatus according to the sixteenth modification. [Diagram 32] FIG. 32 is a diagram showing an example of the configuration of a resonator array structure according to the seventeenth modification. [Diagram 33] FIG. 33 is a diagram showing an example of the configuration of a resonator array structure according to Modification 18. In FIG. [Diagram 34] FIG. 34 is a diagram showing an example of the configuration of a resonator array structure according to the nineteenth modification. [Diagram 35] FIG. 35 is a diagram showing an example of the configuration of a resonator array structure according to Modification 20. In FIG. [Diagram 36] FIG. 36 is a diagram showing an example of the configuration of an RF power supply system according to the first and second embodiments. [Figure 37] FIG. 37 is a diagram showing an example of settings of the resonant frequency of the resonator and the output of the RF power supply according to the first and second embodiments. [Figure 38] FIG. 38 is a diagram showing an example of the configuration of an RF power supply system according to the first and second embodiments. [Figure 39] FIG. 39 is a diagram showing an example of settings of the resonant frequency of the resonator and the output of the RF power supply according to the first and second embodiments. [Diagram 40]FIG. 40 is a diagram showing an example of settings of the resonant frequency of the resonator and the output of the RF power supply according to the first and second embodiments. [Diagram 41] FIG. 41 is a diagram showing an example of the configuration of an RF power supply system according to the fifth, fifteenth and sixteenth modifications. [Diagram 42] FIG. 42 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus in accordance with the third embodiment. [Diagram 43] FIG. 43 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the third embodiment. [Diagram 44] FIG. 44 is a side view showing an example of the configuration of a resonator array structure according to the third embodiment. [Diagram 45] FIG. 45 is a plan view showing an example of the configuration of a resonator array structure related to the EE cross section of FIG. [Diagram 46] FIG. 46 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the twenty-first modification. [Figure 47] FIG. 47 is a schematic vertical sectional view showing an example of the configuration of a plasma processing apparatus in accordance with Modification 22. As shown in FIG. [Figure 48] FIG. 48 is a schematic vertical sectional view showing an example of the configuration of a plasma processing apparatus in accordance with Modification 23. As shown in FIG. [Figure 49] FIG. 49 is a plan view showing an example of the configuration of a resonator array structure according to Modification 24. As shown in FIG. [Figure 50] FIG. 50 is a plan view showing an example of the configuration of a resonator array structure according to Modification 25. In FIG. [Figure 51] FIG. 51 is a diagram showing an example of the relationship between the resonator array structure according to the twenty-fifth modification and a substrate. [Figure 52] FIG. 52 is a plan view showing an example of the configuration of a resonator array structure according to Modification 26. In FIG. [Figure 53] FIG. 53 is a diagram showing an example of the configuration of a resonator according to Modification 27. In FIG. [Figure 54] FIG. 54 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the fourth embodiment. [Figure 55]FIG. 55 is a schematic vertical sectional view showing an example of the configuration of a plasma processing apparatus in accordance with Modification 28. As shown in FIG. [Figure 56] FIG. 56 is a side view showing an example of the configuration of a resonator array structure according to the fourth embodiment and modification example 28. As shown in FIG. [Figure 57] FIG. 57 is a plan view showing an example of the configuration of a resonator array structure related to the FF cross section of FIG. [Figure 58] FIG. 58 is a plan view showing an example of the configuration of a resonator array structure according to Modification 29. As shown in FIG. [Figure 59] FIG. 59 is a plan view showing an example of the configuration of a resonator array structure according to Modification 30. As shown in FIG. [Figure 60] FIG. 60 is a diagram showing an example of the relationship between the resonator array structure according to the thirtyth modification and a substrate. [Figure 61] FIG. 61 is a diagram showing an example of the configuration of an RF power supply system according to the fourth embodiment. As shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the plasma processing apparatus will be described in detail with reference to the accompanying drawings. Note that the disclosed technology is not limited to the following preferred embodiments.

[0009] In a plasma processing apparatus using microwaves for plasma excitation, the power of the microwaves supplied to the processing vessel may be increased in order to increase the electron density of the plasma. The higher the power of the microwaves supplied to the processing vessel, the higher the electron density of the plasma can be.

[0010] Here, it is known that when the power of the microwave supplied into the processing vessel is increased and the plasma electron density reaches a certain upper limit, the dielectric constant of the space inside the processing vessel becomes negative. This upper limit of the electron density is appropriately called the "cutoff density." In addition, the refractive index is known as an index indicating whether or not microwaves propagate through space. The refractive index N is expressed by the following formula (1). N = √ε√μ (1) where ε is the dielectric constant and μ is the magnetic permeability

[0011] Since the magnetic permeability is generally positive, when the dielectric constant of the space in the processing vessel becomes negative, the refractive index of the space in the processing vessel becomes a pure imaginary number according to the above formula (1). As a result, the microwave is attenuated and cannot propagate through the space in the processing vessel. When the electron density of the plasma reaches the cutoff density, the microwave cannot propagate through the space in the processing vessel, and the microwave power is not sufficiently absorbed by the plasma. As a result, there is a problem that the densification of a wide range of the plasma generated in the processing vessel is hindered. Note that, although the microwave has been described as an example in the above, the same problem occurs in a plasma processing apparatus using electromagnetic waves in the very high frequency (VHF) to ultra high frequency (UHF) bands.

[0012] In addition, in a so-called batch-type plasma processing apparatus, the distance between the remote plasma source and the substrate to be processed is long, and it may be difficult to improve the plasma density. Furthermore, in a batch-type plasma processing apparatus, when a strip-shaped flat electrode is used in the longitudinal direction of the processing vessel to generate plasma, the progress of plasma processing may vary between multiple substrates due to voltage standing wave distribution. In addition, in a batch-type plasma processing apparatus in which multiple electrodes connected to a high-frequency power source are provided between multiple substrates, providing wiring in the processing vessel causes problems such as discharge from the wiring and short-circuiting between wiring due to the breakdown voltage of the standing wave. Furthermore, the supply of individual high-frequency power to the multiple electrodes requires phase control and isolation so that the standing waves of each electrode do not interfere with each other. Therefore, it is expected that high-density plasma can be achieved by non-contact power supply inside the processing vessel.

[0013] (First embodiment) [Configuration of plasma processing device] FIG. 1 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to a first embodiment of the present disclosure. FIG. 2 is a schematic horizontal cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the first embodiment. The plasma processing apparatus 1 includes an apparatus body 10 and a control device (an example of a control unit) 11. The plasma processing apparatus 1 shown in FIG. 1 and FIG. 2 is configured as, for example, an inductively coupled plasma processing apparatus. The apparatus body 10 includes a processing vessel 12, a wafer boat 20, gas supply units 38, 40, an antenna 56, a resonator array structure 100, and an RF (Radio Frequency) power supply (an example of an electromagnetic wave generator) 130.

[0014] The processing vessel 12 is formed in a cylindrical shape with a ceiling and an open lower end. The entire processing vessel 12 is formed of, for example, quartz, and a quartz ceiling plate 14 is provided on the ceiling of the processing vessel 12 and seals it. The quartz forming the processing vessel 12 is an example of a first dielectric. A manifold 16 formed in a cylindrical shape from, for example, stainless steel is connected to the lower opening of the processing vessel 12 via a seal member 18 such as an O-ring.

[0015] The lower end of the processing vessel 12 is supported by a manifold 16. A quartz wafer boat 20, on which a number of substrates W as objects to be processed are placed in multiple stages, can be raised and lowered from below the manifold 16 at the lower end of the processing vessel 12, allowing the wafer boat 20 to be loaded and unloaded. The wafer boat 20 is an example of a substrate holder. The support columns 20A of the wafer boat 20 can support, for example, about 30 substrates W with a diameter of 300 mm in multiple stages at approximately equal pitches. The wafer boat 20 is placed on a table 24 via a quartz heat-retaining tube 22. The table 24 is supported on a rotating shaft 28 that penetrates, for example, a stainless steel cover 26 that opens and closes the lower end opening of the manifold 16. A magnetic fluid seal 30, for example, is provided at the penetration portion of the rotating shaft 28, and the rotating shaft 28 is rotatably supported while being airtightly sealed. Furthermore, a sealing member 32 such as an O-ring is provided around the periphery of the lid portion 26 and at the bottom end of the manifold 16 to maintain the sealing performance inside the processing vessel 12.

[0016] The rotating shaft 28 is attached to the tip of an arm 36 supported by a lifting mechanism 34 such as a boat elevator, and the wafer boat 20 and the lid 26 can be lifted and lowered together to load and unload the wafer boat 20 into and from the processing vessel 12. The table 24 may be fixed to the lid 26 side so that the substrates W can be processed without rotating the wafer boat 20. The manifold 16 is provided with a gas supply unit 38 for supplying a plasma gas, such as ammonia (NH3) gas, into the processing vessel 12, and a gas supply unit 40 for supplying a film forming gas, such as hexachlorodisilane (HCD) gas as a silane-based gas.

[0017] A plasma gas dispersion nozzle 42 made of a quartz tube that penetrates the side wall of the manifold 16 inwardly and is bent upwardly is connected to the gas supply unit 38. The plasma gas dispersion nozzle 42 has a plurality (a large number) of gas injection holes 42A formed at predetermined intervals along its length, so that the plasma gas can be injected from each gas injection hole 42A in a substantially uniform manner in the horizontal direction. The gas supply unit 38 may supply, as the plasma gas, ammonia (NH3) gas, hydrogen (H2) gas, or an inert gas, for example. The inert gas is, for example, argon (Ar) gas, nitrogen (N2) gas, or the like.

[0018] A deposition gas dispersion nozzle 44 made of a quartz tube that penetrates the side wall of the manifold 16 inward and bends upward is connected to the gas supply unit 40. Here, two deposition gas dispersion nozzles 44 are provided (see FIG. 2). Each deposition gas dispersion nozzle 44 has a plurality (a large number) of gas injection holes 44A formed at predetermined intervals along its length, so that deposition gas can be injected from each gas injection hole 44A in a substantially uniform manner in the horizontal direction. The gas supply unit 40 may supply, as the deposition gas, a silane-based gas such as dichlorosilane (SiH2Cl2), monosilane (SiH4), disilane (Si2H6), hexamethyldisilazane (HMDS), monochlorosilane (SiH3Cl), trichlorosilane (SiHCl3), tetrachlorosilane (SiCl4), or disilylamine (DSA) gas as the deposition gas. Furthermore, the gas supply unit 40 may supply a trisilylamine (TSA) gas, a bis(tert-butylaminosilane) gas, or the like as a film forming gas.

[0019] A plasma generating section 48 is formed in a part of the side wall of the processing vessel 12 along the height direction. In addition, a long and narrow exhaust port 50 is provided on the opposite side of the processing vessel 12 facing the plasma generating section 48, for example, by scraping the side wall of the processing vessel 12 in the vertical direction. The exhaust port 50 is an exhaust port for evacuating the inside of the processing vessel 12 to a vacuum. In the plasma generating section 48, a long and narrow opening 52 is formed in the vertical direction by scraping the side wall of the processing vessel 12 by a predetermined width in the vertical direction. In the plasma generating section 48, a plasma partition wall 54 made of, for example, quartz, which is long and narrow in the vertical direction and has a concave cross section so as to cover the opening 52 from the outside, is welded airtightly to the outer wall of the vessel to be integrated with the inside of the vessel. As a result, the plasma generating section 48 is formed with one side opening into the processing vessel 12 and communicating therewith by recessing a part of the side wall of the processing vessel 12 outward in a concave shape. That is, the internal space of the plasma generating unit 48 is integrally connected to the inside of the processing vessel 12. The opening 52 is formed to be sufficiently long in the vertical direction so as to cover all the substrates W held in the wafer boat 20 in the height direction. A resonator array structure 100 is provided in the internal space of the plasma generating unit 48, i.e., between the side walls of the plasma partition wall 54. The plasma generating unit 48 is an example of a plasma generation chamber partitioned by the plasma partition wall 54. Therefore, the resonator array structure 100 is provided in the plasma generation chamber partitioned by the plasma partition wall 54 provided along the longitudinal direction of the processing vessel 12.

[0020] An antenna 56 is provided on the outer surface of the wall on the end side of the plasma compartment wall 54 along its length direction (vertical direction). The antenna 56 includes, for example, a solenoid coil. That is, the antenna 56 is wound in a loop shape. The opening of the antenna 56 may be any shape such as a circle, an ellipse, or a polygon (rectangle, triangle, etc.). An RF power source 130 is connected to the antenna 56, and a source RF signal is supplied. The magnetic field H generated by the antenna 56 is in the direction of the X-axis shown in FIG. 1 and FIG. 2.

[0021] The RF power supply 130 is coupled to the antenna 56 and configured to generate a source RF signal (source RF power) for plasma generation through at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 3000 MHz. In one embodiment, the RF power supply 130 may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 56. As described above, the RF power supply 130 is an example of an electromagnetic wave generator and an example of a high-frequency power supply. The antenna 56 is an example of an electromagnetic wave supply unit.

[0022] In the plasma generating section 48, the plasma gas distribution nozzle 42 is bent radially outward of the processing vessel 12 while extending upward inside the processing vessel 12, and is positioned outside the resonator array structure 100 in the plasma generating section 48 (opposite the center side of the processing vessel 12). The plasma gas distribution nozzle 42 is provided in the plasma generating section 48, standing upward. Therefore, the plasma gas injected from the gas injection hole 42A of the plasma gas distribution nozzle 42 flows through the resonator array structure 100 toward the center of the processing vessel 12 while diffusing. The plasma gas is excited by an electromagnetic wave supplied from the antenna 56 to the internal space of the plasma generating section 48 through the plasma partition wall 54 and the resonator array structure 100. As a result, the plasma gas is turned into plasma in the internal space of the plasma generating section 48. The plasma gas can flow toward the center of the processing vessel 12 through gaps near the resonator array structure 100. Ions, radicals, etc. contained in the plasma head toward the center of the processing vessel 12.

[0023] Two film formation gas dispersion nozzles 44 are provided standing near the outside of the opening 52 of the plasma generating unit 48, i.e., on both sides outside the opening 52 (inside the processing vessel 12). In the vicinity of the opening 52, a film formation gas is injected toward the center of the processing vessel 12 from each gas injection hole 44A provided in each film formation gas dispersion nozzle 44. Ions and radicals contained in the plasma and the film formation gas flow in a laminar state between the substrates W, and the substrates W are processed. For example, a silicon nitride film or the like is formed on the substrates W.

[0024] An exhaust port cover member 66 made of quartz and formed with a U-shaped cross section is attached by welding to cover the exhaust port 50 provided facing the plasma generating unit 48. The exhaust port cover member 66 extends upward along the side wall of the processing vessel 12, and a vacuum is drawn from a gas outlet 68 at the upper part of the processing vessel 12 by a vacuum exhaust system having a vacuum pump (not shown) or the like. In addition, a cylindrical heating unit 70 for heating the processing vessel 12 and the substrate W therein is provided on the outside of the processing vessel 12 so as to surround the outer periphery of the processing vessel 12.

[0025] The resonator array structure 100 is formed by arranging a plurality of resonators that can resonate with the magnetic field component of an electromagnetic wave and have a size smaller than the wavelength of the electromagnetic wave, and is located in a region in the processing vessel 12 to which the electromagnetic wave can be supplied via the plasma compartment wall 54. This region is, for example, the internal space of the plasma generating unit 48. The resonator array structure is also called a metamaterial, and the resonator is also called a meta-atom.

[0026] By positioning the resonator array structure 100 in the relevant region within the processing vessel 12, the electromagnetic waves supplied by the antenna 56 to the processing space, which is the internal space of the processing vessel 12, can be resonated with the multiple resonators of the resonator array structure 100. Here, the internal space of the processing vessel 12 also includes the internal space of the plasma generating unit 48. By resonating the electromagnetic waves with the multiple resonators, the electromagnetic waves can be efficiently supplied to the processing space of the processing vessel 12 and the magnetic permeability of the processing space can be made negative. When the magnetic permeability of the processing space is negative, even if the electron density of the plasma generated in the processing space reaches the cutoff density and the dielectric constant of the processing space is negative, the refractive index becomes a real number according to the above formula (1), so that the electromagnetic waves can propagate in the processing space. As a result, even if the electron density of the plasma generated in the processing space reaches the cutoff density, the electromagnetic waves can propagate beyond the skin depth of the plasma and the power of the electromagnetic waves is efficiently absorbed by the plasma. As a result, a high-density plasma can be generated in a wide range beyond the skin depth of the plasma. That is, according to the plasma processing apparatus 1 of this embodiment, the resonator array structure 100 is positioned in an area within the processing vessel 12 to which electromagnetic waves can be supplied via the plasma partition wall 54, thereby making it possible to realize high density plasma over a wide area.

[0027] Here, a detailed configuration of the resonator array structure 100 will be described with reference to Fig. 1 to Fig. 3. Fig. 3 is a diagram showing an example of the configuration of the resonator array structure according to the first embodiment. Fig. 3 shows the resonator array structure 100 as viewed from the wafer boat 20 side in the X-axis direction of Fig. 1. The resonator array structure 100 is formed to be sufficiently long in the vertical direction so as to cover all of the substrates W held on the wafer boat 20 in the height direction.

[0028] 1 and 2, the resonator array 100 is disposed in the internal space of the plasma generating unit 48. In this embodiment, in the internal space of the plasma generating unit 48, plasma P is generated on the wafer boat 20 side of the resonator array 100.

[0029] The resonator array structure 100 is formed by arranging a plurality of resonators 101, each of which can resonate with the magnetic field component of an electromagnetic wave and has a size smaller than the wavelength of the electromagnetic wave, in a lattice pattern. Specifically, as shown in FIG. 3, the plurality of resonators 101 are arranged on the same plane in the flat resonator array structure 100. That is, the plurality of resonators 101 are arranged on a plane parallel to the longitudinal surface of the resonator array structure 100. That is, when viewed from the wafer boat 20 side, the C-shaped ring members 111 shown in a transparent manner are arranged in a lattice pattern so that the C shape is visible. In the resonator array structure 100, for example, the resonators 101 are arranged in columns in the column direction (horizontal direction) that fit within the width of the internal space of the plasma generating unit 48, and in two rows in the row direction (vertical direction) per slot SL for storing the substrates W in the wafer boat 20. 3, when n substrates W are stored in the wafer boat 20, there are slots SL(1) to SL(n), and 2n rows of resonators 101 are arranged in the row direction. In other words, the size of the resonator array structure 100 can be expressed as L1 in the column direction and L2×n in the row direction, where L1 is the width of the resonator array structure 100 in the column direction and L2 is the length of one slot SL in the row direction.

[0030] At this time, the boundaries of the multiple resonators 101 are shown as boundaries 105, but in reality, the multiple resonators 101 are integrally formed as the resonator array structure 100. The multiple resonators 101 may be formed as separate bodies and fitted into a lattice-shaped frame or bonded to each other to form the resonator array structure 100. Each of the multiple resonators 101 forms a series resonant circuit consisting of a capacitor equivalent element and a coil equivalent element. The series resonant circuit is realized by patterning a conductor on a plane. The resonator array structure 100 may have a through hole through which the plasma gas can pass as appropriate. The magnetic field H generated by the antenna 56 is directed to pass through the C-shaped ring member 111.

[0031] Fig. 4 is a cross-sectional view showing an example of the AA cross section of Fig. 3. As shown in Fig. 4, in the AA cross section of the resonator array 100, cross sections of the multiple resonators 101 appear side by side. Similarly to Fig. 3, the boundary between the multiple resonators 101 is represented by a boundary 105. Here, a first surface 106 of the resonator array 100 is a surface facing the center side of the processing vessel 12 (the wafer boat 20 side), and a second surface 107 is a surface facing the antenna 56 side.

[0032] FIG. 5 is a diagram showing an example of a plane and a BB cross section of a single resonator according to the first embodiment. In FIG. 5, a plan view 150 of a single resonator 101 and a BB cross section 151 of the plan view 150 are shown, taking a certain resonator 101 as an example among a plurality of resonators 101 formed as an integral body. As shown in the plan view 150 and the cross section 151, the single resonator 101 is in an area surrounded by a boundary 105. That is, in this embodiment, the resonator 101 is in a state in which two C-shaped ring members 111 are each surrounded by a dielectric 112. The dielectric 112 is an example of a second dielectric. The dielectric 112 is formed so that a thickness 109a from the first C-shaped ring member 111 to the first surface 106 is thinner than a thickness 109b from the second C-shaped ring member 111 to the second surface 107. This allows the resonator array 100 to selectively generate plasma on the first surface 106 side, which is the wafer boat 20 side. That is, the resonator array 100 can control the plasma generation surface by the thickness of the dielectric 112 from each ring member 111 of the resonator 101 to the surface.

[0033] FIG. 6 is a cross-sectional view showing an example of the CC cross section of FIG. 5. FIG. 7 is a cross-sectional view showing an example of the DD cross section of FIG. 5. As shown in the cross-sectional view 151 of FIG. 5, FIG. 6 and FIG. 7, the single resonator 101 has a structure in which two C-shaped ring members 111 made of a conductor are arranged adjacent to each other in the opposite directions, and a dielectric 112 is arranged between the ring members 111. That is, in the resonator 101, the dielectric 112 is sandwiched between the two C-shaped ring members 111 arranged in the opposite directions. Capacitor equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 111 and on both ends of each ring member 111, and a coil equivalent element is formed along each ring member 111. This allows the resonator 101 to form a series resonant circuit. In the resonator 101 shown in FIG. 5 to FIG. 7, the number of C-shaped ring members 111 arranged (hereinafter also referred to as the "number of layers") is two, but the number of layers of the C-shaped ring members 111 may be greater than two. In this case, resonator 101 has a structure in which C-shaped ring members 111 are arranged adjacent to each other in opposite directions, and dielectric material 112 is arranged between C-shaped ring members 111.

[0034] Here, the resonant frequency of the resonator 101 will be described with reference to FIG. 8. FIG. 8 is an explanatory diagram showing an example of calculation of the resonant frequency of the resonator according to the first embodiment. As shown in a cross-sectional view 152 of FIG. 8, the resonator 101 can be regarded as having a structure in which a dielectric 112 is sandwiched between two C-shaped ring members 111. At this time, when a magnetic field H penetrating the C-shaped ring member 111 of the resonator 101 is generated, an induced current Ie is generated in the C-shaped ring member 111. Note that the dielectric 112 surrounding the outside of the C-shaped ring member 111 is omitted in FIG. 8.

[0035] On the other hand, the resonant frequency of resonator 101 can be calculated from the dimensions in cross-sectional view 152 and plan view 153 in Fig. 8. In other words, the resonant frequency of resonator 101 can be calculated from the dimensions of C-shaped ring member 111 and the thickness of dielectric 112 sandwiched between two C-shaped ring members 111, as shown in the following formulas (2) to (5). Formula (2) expresses inductance L MAEquation (3) is a formula for determining the capacitance C of the resonator 101. MA Of these, the capacitance C corresponding to the upper half or lower half of the plan view 153 half Equation (4) is a formula for determining the capacitance C of the resonator 101. MA Equation (5) is used to calculate the resonant frequency Fr of the resonator 101.

[0036]

number

number

number

number

[0037] In formula (2), r represents the radius from the center of the C-shaped ring member 111 to the center of the width of the C, and μ0 represents the magnetic permeability of a vacuum. half represents the capacitance of the resonator 101 that corresponds to the upper or lower half of the plan view 153. In addition, in formula (3), ε represents the dielectric constant, ε0 represents the dielectric constant (electric constant) of a vacuum, S represents the area of ​​the upper or lower half of the C-shaped ring member 111, and d represents the distance between the two C-shaped ring members 111. In addition, in formula (3), r out represents the outer radius of the C-shaped ring member 111, and r in represents the inner radius of the C-shaped ring member 111, and S split represents the area of ​​the C-shaped gap of the C-shaped ring member 111. split is approximately calculated as the area of ​​a rectangle from the width Wc of the C-shaped ring member 111 shown in the plan view 153 and the gap g of the C-shape. PTFErepresents the distance between the two C-shaped ring members 111 when polytetrafluoroethylene (PTFE) is used as the dielectric 112. As shown in the cross-sectional view 152, it is preferable that the thickness d1 of the two C-shaped ring members 111 is the same.

[0038] In equation (5), the inductance L calculated in equations (2) and (4) is MA and capacitance C MA The resonance frequency Fr of the resonator 101 is calculated based on the above equation. The resonance frequency Fr is determined by the outer radius r out and the inner radius r in The resonance frequency Fr decreases as the thickness d of the dielectric 112 sandwiched between the two C-shaped ring members 111 decreases. The resonance frequency Fr also decreases as the number of stacked C-shaped ring members 111 increases. As will be described later, the outer radius r out and the inner radius r in By adjusting the thickness d of the dielectric 112 or the thickness of the dielectric 112, a resonator 101 having a different resonance frequency may be used. In addition, in this embodiment, the C-shaped ring member 111 is described as having a shape in which a part of the ring is notched, but is not limited to this. The shape of the ring member is not limited to a circular ring, and may be, for example, an elliptical ring, a triangular ring, a square ring, a polygonal ring, or any other ring having a notch (corresponding to the gap g).

[0039] In this manner, in the resonator array structure 100 of the present embodiment, the multiple resonators 101 are arranged in a direction facing the opening of the antenna 56, so that the magnetic field H penetrates the C-shaped ring member 111 of the resonators 101, enabling magnetic field resonance. Therefore, each resonator 101 of the resonator array structure 100 can resonate at the resonant frequency Fr.

[0040] Referring again to Fig. 1, the control device 11 has a processor, a memory, and an input / output interface. Programs, process recipes, and the like are stored in the memory. The processor reads out and executes the programs from the memory, thereby controlling each part of the device main body 10 via the input / output interface based on the process recipes stored in the memory.

[0041] For example, when plasma is generated in the processing space, the control device 11 controls the electromagnetic waves supplied to the processing space by the antenna 56 to resonate with the multiple resonators 101 in a target frequency band higher than the resonant frequencies of the multiple resonators 101. Here, the resonant frequency is, for example, a frequency at which the transmission characteristic value (e.g., S21 value) of the multiple resonators 101 becomes a minimum value.

[0042] When the frequency of the electromagnetic wave supplied to the processing space by the antenna 56 coincides with the resonant frequency Fr (for example, about 2.35 GHz) of the multiple resonators 101, the S21 value of the multiple resonators 101 becomes a minimum value, and the electromagnetic wave and the multiple resonators 101 resonate with each other. The resonance between the electromagnetic wave and the multiple resonators 101 is maintained even in a predetermined frequency band (for example, about 0.1 GHz) higher than the resonant frequency Fr of the multiple resonators 101. In the predetermined frequency band higher than the resonant frequency Fr of the multiple resonators 101, the permittivity and permeability of the processing space can both be made negative by the resonance between the electromagnetic wave and the multiple resonators 101, and as can be seen from the above formula (1), the electromagnetic wave can propagate in the processing space. The target frequency band in this embodiment is set to a predetermined frequency band (for example, about 0.1 GHz) higher than the resonant frequency Fr of the multiple resonators 101. For example, the target frequency band is preferably within 0.05 times the resonant frequency Fr of the multiple resonators 101.

[0043] Regarding the propagation of electromagnetic waves through multiple resonators, the relationship between the resonant frequency and the refractive index, dielectric constant, and magnetic permeability has been reported by D.R. Smith, D.C. Vier, Th. Koschny, and C.M. Soukoulis et al. in "Electromagnetic parameter retrieval from inhomogeneous metamaterials" in "PHYSICAL REVIEW E 71,036617(2005)".

[0044] Next, a plasma processing method performed using the plasma processing apparatus 1 will be described. Here, the plasma processing will be described by taking as an example a case where a silicon nitride film is formed on the surface of the substrate W by plasma CVD (Chemical Vapor Deposition). First, the control device 11 controls the apparatus body 10 to raise the wafer boat 20, on which a large number of substrates W at room temperature, for example 50 substrates W each having a size of 300 mm, are placed, from below into the processing vessel 12, which has been adjusted to a predetermined temperature in advance. The control device 11 then controls the apparatus body 10 to close the lower end opening of the manifold 16 with the lid 26 to seal the inside of the vessel. The control device 11 controls the apparatus body 10 to reduce the pressure inside the processing vessel 12 to maintain it at a predetermined process pressure, and to increase the power supplied to the heating unit 70 to increase the substrate temperature and maintain the process temperature. The control device 11 controls the apparatus body 10 to alternately and intermittently supply various process gases from the gas supply units 38 and 40, respectively, to form a silicon nitride film on the surface of the substrate W supported by the rotating wafer boat 20.

[0045] Specifically, the NH3 gas is injected horizontally from each gas injection hole 42A of the plasma gas dispersion nozzle 42 provided in the plasma generating unit 48. The HCD gas, which is a film forming gas, is injected horizontally from each gas injection hole 44A of the film forming gas dispersion nozzle 44. The injected gases react with each other to form a silicon nitride film. At this time, a source RF signal from the RF power supply 130 is supplied to the antenna 56. Therefore, the NH3 gas injected from the gas injection hole 44A flows into the resonator array structure 100, becomes plasma and is activated, and generates radicals (active species) such as N*, NH*, NH2*, and NH3* (the symbol * indicates radicals). The generated radicals are released toward the center of the processing vessel 12 from the opening 52 of the plasma generating unit 48, diffuse, and flow between the substrates W in a laminar flow state. Then, each radical reacts with the molecules of the HCD gas attached to the surface of the substrate W to form a silicon nitride film as described above.

[0046] In this way, by resonating the electromagnetic wave with the multiple resonators 101 in a target frequency band higher than the resonant frequency Fr of the multiple resonators 101, even if the electron density of the plasma reaches the cutoff density, the electromagnetic wave can propagate beyond the skin depth of the plasma. Therefore, the power of the electromagnetic wave can be efficiently absorbed by the plasma. As a result, high-density plasma can be generated in a wide range beyond the skin depth of the plasma. That is, according to the plasma processing apparatus 1 of this embodiment, by resonating the electromagnetic wave with the multiple resonators 101 in a target frequency band higher than the resonant frequency Fr of the multiple resonators 101, high-density plasma can be realized in a wide range. Moreover, in the plasma processing apparatus 1 of this embodiment, high-density plasma can be realized even in a so-called batch-type plasma processing apparatus by non-contact power supply from the antenna 56 to the resonator array structure 100 in the processing vessel 12. That is, the process speed can be improved.

[0047] (Variations 1 to 4) Next, modified examples 1 to 4 of the first embodiment will be described with reference to Fig. 9 to Fig. 13. Modified examples 1 to 4 are modifications of the arrangement of the resonator array structure 100. In the plasma processing apparatus 1 in modified examples 1 to 4, one or more of the size and arrangement of the resonator array structure 100 and the shape of the antenna 56 side of the processing vessel 12 are appropriately modified. Therefore, in modified examples 1 to 4, the description of the overlapping configurations and operations of the components similar to those of the first embodiment described above will be omitted.

[0048] 9 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the first modification. In the arrangement example 200 of the first modification shown in FIG. 9, the arrangement of the resonator array 100 of the first embodiment is moved to the opening 52 of the processing vessel 12 in the internal space of the plasma generating unit 48. That is, the resonator array 100 of the arrangement example 200 is arranged closer to the center of the processing vessel 12 than the position of the resonator array 100 of the first embodiment. That is, in the first modification, the wafer boat 20 side of the resonator array 100 is located at the opening 52 of the processing vessel 12, and the plasma P is generated between the two deposition gas dispersion nozzles 44. The direction of the magnetic field H from the antenna 56 is the X-axis direction as in the first embodiment, and is a direction that perpendicularly penetrates the plane of the resonator array 100 from the plasma gas dispersion nozzle 42 side of the plasma generating unit 48.

[0049] FIG. 10 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second modification. FIG. 11 is a schematic horizontal cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second modification. In the arrangement example 201 of the second modification shown in FIGS. 10 and 11, the arrangement of the resonator array 100 of the first embodiment is moved to the wafer boat 20 side from the opening 52 of the processing vessel 12, and the size in the horizontal direction is increased to form a resonator array 100a. That is, the resonator array 100a is arranged not in the internal space of the plasma generating unit 48 but inside the cylinder of the processing vessel 12, and is arranged on the wafer boat 20 side from the two deposition gas dispersion nozzles 44. That is, in the second modification, as shown in FIG. 11, the plasma P is generated on the wafer boat 20 side of the resonator array 100a. The direction of the magnetic field H from the antenna 56 is the X-axis direction as in the first embodiment, and is a direction that passes from the plasma gas dispersion nozzle 42 side of the plasma generating unit 48 through the opening 52 and perpendicularly penetrates the plane of the resonator array 100a.

[0050] FIG. 12 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 3. In an arrangement example 202 of Modification 3 shown in FIG. 12, the processing vessel 12 of Modification 2 is replaced with a processing vessel 12a in which the plasma generating unit 48 and the opening 52 are omitted, and the resonator array structure 100a of Modification 2 is replaced with a resonator array structure 100b in which the horizontal size is increased. In addition, the processing vessel 12a has a plasma gas dispersion nozzle 42a disposed between the two deposition gas dispersion nozzles 44 on its side wall. Furthermore, an antenna 56a obtained by enlarging the antenna 56 of Modification 2 to match the horizontal size of the resonator array structure 100b is disposed outside the position where the plasma gas dispersion nozzle 42a of the processing vessel 12a is disposed (outside the vessel). In Modification 3, as shown in FIG. 12, a plasma P is generated on the wafer boat 20 side of the resonator array structure 100b. The direction of the magnetic field H from the antenna 56a is in the X-axis direction as in the first embodiment, and perpendicularly passes through the plane of the resonator array structure 100b from the plasma gas dispersion nozzle 42a side.

[0051] FIG. 13 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the fourth modification. In an arrangement example 203 of the fourth modification shown in FIG. 13, the resonator array 100b of the third modification is replaced with a plurality of resonator arrays 100c having a smaller horizontal size than the resonator array 100b, and the resonator arrays 100c are arranged along the outer periphery of the substrate W held by the wafer boat 20. For example, three resonator arrays 100c are arranged as shown in FIG. 13. The direction of the magnetic field H from the antenna 56a is the X-axis direction as in the first embodiment, and is a direction that perpendicularly penetrates the plane of the central resonator array 100c from the plasma gas dispersion nozzle 42a side. At this time, the direction of the magnetic field H of the resonator arrays 100c arranged on both sides is a direction that obliquely penetrates the plane of the resonator array 100c, but the magnetic field H includes a component that perpendicularly penetrates the plane of the resonator array 100c, so that each resonator 101 can resonate. 13, plasma P is generated on the wafer boat 20 side of each resonator array 100c. As shown in the resonator array structures 100, 100a to 100c, the arrangement of the resonator array structures can have a degree of freedom with respect to the substrate W.

[0052] (Variation 5) Next, a fifth modified example of the first embodiment will be described with reference to Fig. 14. The fifth modified example is a modified example of the antenna 56. In the fifth modified example, an antenna 57 and an RF power supply 130a are provided instead of the antenna 56 and the RF power supply 130 of the first embodiment. Therefore, in the fifth modified example, a description of the overlapping configurations and operations of the same components as those of the first embodiment will be omitted.

[0053] Fig. 14 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 5. Modification 5 shown in Fig. 14 has an antenna 57 and an RF power supply 130a instead of the antenna 56 and the RF power supply 130 of the first embodiment.

[0054] The antenna 57 has a plurality of coils 57-1 to 57-n. The coils 57-1 to 57-n are wound, for example, in a loop shape. The openings of the coils 57-1 to 57-n may have any shape such as a circle, an ellipse, or a polygon (such as a square or a triangle). The openings of the coils 57-1 to 57-n face the center of the processing vessel 12 (the X-axis direction). An RF power supply 130a is connected to the coils 57-1 to 57-n, and a source RF signal is supplied to the coils 57-1 to 57-n. The magnetic fields H generated by the coils 57-1 to 57-n are oriented in the X-axis direction shown in FIG. 14.

[0055] The coils 57-1 to 57-n correspond to, for example, the slots SL(1) to SL(n) shown in FIG. 3 and supply magnetic fields H (electromagnetic waves) to two rows of the resonators 101 corresponding to the slots SL(1) to SL(n) of the resonator array structure 100.

[0056] The RF power supply 130a is coupled to the coils 57-1 to 57-n of the antenna 57 and is configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit. The RF power supply 130a can supply a source RF signal to each of the coils 57-1 to 57-n individually. The RF power supply 130a generates and supplies source RF signals of different frequencies to each of the coils 57-1 to 57-n. In this case, the resonator array structure 100 changes the resonance frequency of the resonators 101 for every two rows of the resonators 101 corresponding to the slots SL(1) to SL(n) as in the resonator array structure 100d shown in FIG. 15 of the modified example 6 described later. That is, the antenna 57 and the RF power supply 130a of the modified example 5 are combined with the resonator array structure 100d of the modified example 6 described later. In this way, by changing the source RF signal supplied to each of the coils 57-1 to 57-n, the plasma density (processing speed) between the multiple substrates W can be arbitrarily controlled.

[0057] (Variations 6 to 8) Next, modified examples 6 to 8 of the first embodiment will be described with reference to Fig. 15 to Fig. 17. Modified examples 6 to 8 are modifications of the resonator array 100. In modified examples 6 to 8, resonator arrays 100d to 100f are provided instead of the resonator array 100 of the first embodiment. Therefore, in modified examples 6 to 8, descriptions of the overlapping configurations and operations of components similar to those of the first embodiment will be omitted.

[0058] FIG. 15 is a diagram showing an example of the configuration of a resonator array structure according to the sixth modification. The resonator array structure 100d of the sixth modification shown in FIG. 15 has resonators 101A(1) to 101A(n) with different resonant frequencies for every two rows of the resonators 101A corresponding to the slots SL(1) to SL(n). That is, the resonator 101A(1) corresponding to the slot SL(1) has a resonant frequency Fr(1), and is supplied with a source RF signal of an output frequency Fo(1) from, for example, the coil 57-1 of the fifth modification. Similarly, the resonator 101A(2) corresponding to the slot SL(2) has a resonant frequency Fr(2), and is supplied with a source RF signal of an output frequency Fo(2) from, for example, the coil 57-2 of the fifth modification. Similarly, the resonator 101A(n) corresponding to the slot SL(n) has a resonant frequency Fr(n), and is supplied with a source RF signal of an output frequency Fo(n) from, for example, the coil 57-n of the fifth modification. The resonator array structure 100d may be divided into two rows of the resonators 101A corresponding to the slots SL(1) to SL(n). As described above, in the fifth and sixth modifications, the plasma density (processing speed) between the substrates W can be arbitrarily controlled.

[0059] FIG. 16 is a diagram showing an example of the configuration of a resonator array structure according to the seventh modification. In the resonator array structure 100e of the seventh modification shown in FIG. 16, resonators 101A(1) and 101A(2) with different resonant frequencies are arranged in a row corresponding to the outer periphery and a row corresponding to the center of the substrate W held on the wafer boat 20. For example, the resonator 101A(2) is arranged in a row corresponding to L3 shown in FIG. 16, and the resonator 101A(1) is arranged in the other row. In this case, the resonator 101A(1) has a resonant frequency Fr(1), and a source RF signal with an output frequency Fo(1) is supplied. The resonator 101A(2) has a resonant frequency Fr(2), and a source RF signal with an output frequency Fo(2) is supplied. In the seventh modification, the plasma density (processing speed) at the outer periphery and the center of each substrate W held in each of the slots SL(1) to SL(n) of the wafer boat 20 can be controlled in the same way.

[0060] FIG. 17 is a diagram showing an example of the configuration of a resonator array according to Modification 8. In a resonator array 100f according to Modification 8 shown in FIG. 17, a through hole 108 is provided in each of a plurality of resonators 101B arranged in a lattice pattern. The through hole 108 is provided in the center of the resonator 101B, and is formed so as to penetrate the dielectric 112 at the center of two C-shaped ring members 111. That is, the through hole 108 penetrates the first surface 106 and the second surface 107 of the resonator array 100f. In the example of FIG. 17, 2n rows of the resonators 101B are arranged in the row direction so as to correspond to the slots SL(1) to SL(n) of the wafer boat 20, respectively. That is, in the resonator array 100f according to Modification 8, the plasma gas injected from the gas injection holes 42A of the plasma gas dispersion nozzle 42 flows more easily toward the center of the processing vessel 12.

[0061] Second embodiment In the above-mentioned first embodiment, a flat resonator array 100 in which a plurality of resonators 101 are arranged on the same plane is used, but a resonator array in which the resonators 101 are arranged perpendicularly to a flat base plate may also be used. Such an embodiment in which a resonator array is used will be described as a second embodiment. Note that the plasma processing apparatus in the second embodiment is similar to the above-mentioned first embodiment except for the configuration of the resonator array and the arrangement of the antennas, and therefore a description of the overlapping configuration and operation will be omitted.

[0062] Fig. 18 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second embodiment. As shown in Fig. 18, an apparatus body 10a of a plasma processing apparatus 1a of the second embodiment has a resonator array structure 300 instead of the resonator array structure 100 of the first embodiment. In addition, an antenna 56b is disposed outside the plasma compartment wall 54 on the side surface of the plasma generating part 48 (outside the processing vessel 12).

[0063] The resonator array structure 300 is formed by arranging a plurality of resonators that can resonate with the magnetic field component of the electromagnetic wave and have a size smaller than the wavelength of the electromagnetic wave, and is located in a region in the processing vessel 12 to which the electromagnetic wave can be supplied via the plasma partition wall 54. This region is, for example, the internal space of the plasma generating unit 48. The resonator array structure 300 is disposed such that the base plate 320 faces the end side (the plasma gas dispersion nozzle 42 side) of the plasma generating unit 48. The magnetic field H generated by the antenna 56b is directed from the side surface of the resonator array structure 300 through a resonator 301 of a cell CS described later (Y-axis direction).

[0064] Here, a detailed configuration of the resonator array 300 will be described with reference to Fig. 19. Fig. 19 is a diagram showing an example of the configuration of a resonator array according to the second embodiment. Fig. 19 shows the resonator array 300 as viewed from the wafer boat 20 side in the X-axis direction of Fig. 18. The resonator array 300 is formed to be sufficiently long in the vertical direction so as to cover all of the substrates W held on the wafer boat 20 in the height direction.

[0065] 18, the resonator array 300 is disposed in the internal space of the plasma generating unit 48. In this embodiment, the plasma P is generated on the wafer boat 20 side of the resonator array 300 in the internal space of the plasma generating unit 48. Note that, although the plasma P is illustrated in FIG. 18 as being closer to the center of the processing vessel 12 than the resonator array 300, the plasma P is actually generated in the space within a cell CS, which will be described later.

[0066] The resonator array structure 300 is arranged so that a plurality of resonators 301, which can resonate with the magnetic field component of microwaves and have a size smaller than the wavelength of microwaves, form a plurality of cells CS. In the resonator array structure 300, a plurality of resonators 301 are arranged vertically on a flat base plate 320 to form a plurality of cells CS. That is, the plurality of resonators 301 are arranged on a plane perpendicular to the longitudinal surface of the resonator array structure 300. For example, the plurality of cells CS are arranged in a lattice shape, and the arrangement is rotated 45 degrees to arrange diamond-shaped cells CS in each row and column direction. Each cell CS is a cell surrounded by resonators 301 having the same resonance frequency. Note that the resonance frequency of the resonator 301 is the same as that of the resonator 101 of the first embodiment, and therefore the description thereof will be omitted. The opening of the cell CS faces the center side (wafer boat 20 side) of the processing vessel 12. That is, as shown in FIG. 18, the magnetic field H generated by the antenna 56b penetrates the side surface of the cell CS, so that the magnetic field H enables each resonator 301 of each cell CS to resonate.

[0067] In the resonator array structure 300, for example, the cells CS are arranged in columns whose column direction (horizontal direction) fits within the width of the internal space of the plasma generating section 48, and in rows whose row direction (vertical direction) is three rows per slot SL for storing the substrate W in the wafer boat 20. Since the cells CS are diamond-shaped, when the cells CS in the first row whose apexes of the diamonds contact the end face of the base plate 320 and the cells CS in the second row whose apexes of the diamonds do not contact the end face are viewed vertically at the left and right ends of the resonator array structure 300, the cells CS in the second row are arranged in a staggered arrangement with the cells CS shifted horizontally. Similarly, when the cells CS in the first row whose apexes of the diamonds contact the end face and the cells CS in the second row whose apexes of the diamonds do not contact the end face are viewed horizontally at the top and bottom ends of the resonator array structure 300, the cells CS in the second row are arranged in a staggered arrangement with the cells CS shifted vertically. 19, when n substrates W are stored in the wafer boat 20, there are slots SL(1) to SL(n), and 3n rows of cells CS are arranged in the row direction. That is, the size of the resonator array structure 300 can be expressed as L1 in the column direction and L2×n in the row direction, where L1 is the width of the resonator array structure 300 in the column direction and L2 is the length of one slot SL in the row direction. The direction of the magnetic field H is the column direction (horizontal direction), which passes through each resonator 301 of the cells CS.

[0068] As a specific configuration example, the multiple resonators 301 include at least one of resonators 301A and 301B shown in Fig. 20 and Fig. 21. Each of the multiple resonators 301 configures a series resonant circuit made up of a capacitor equivalent element and a coil equivalent element. The series resonant circuit is realized by patterning a conductor on a plane.

[0069] FIG. 20 is a diagram showing an example of the configuration of a resonator 301A according to the second embodiment. The resonator 301A shown in FIG. 20 has a structure in which two C-shaped ring members 311A ​​made of a conductor and arranged in mutually opposite directions and in a concentric shape are laminated on one surface of a dielectric plate 312A. Capacitor equivalent elements are formed on the opposing surfaces of the inner ring member 311A ​​and the outer ring member 311A ​​and on both ends of each ring member 311A, and a coil equivalent element is formed along each ring member 311A. This allows the resonator 301A to configure a series resonant circuit. The resonator 301A may be applied to other embodiments or modified examples such as the resonator 101 of the first embodiment.

[0070] FIG. 21 is a diagram showing an example of the configuration of a resonator 301B according to the second embodiment. The resonator 301B shown in FIG. 21 has a structure in which a dielectric plate 312B is arranged between two C-shaped ring members 311B made of a conductor and arranged adjacent to each other in the opposite directions. That is, in the resonator 301B, the dielectric plate 312B is sandwiched between the two C-shaped ring members 311B arranged in the opposite directions. Capacitor equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 311B and on both ends of each ring member 311B, and coil equivalent elements are formed along each ring member 311B. This allows the resonator 301B to form a series resonant circuit. It can also be expressed that the resonator 301B is formed for each set of two C-shaped ring members 311B.

[0071] In the resonator 301B shown in FIG. 21, the number of ring members 311B (hereinafter also referred to as "the number of layers") is two, but the number of layers of the ring members 311B may be greater than two. FIG. 22 is a diagram showing another example of the configuration of the resonator 301B according to the second embodiment. The resonator 301B shown in FIG. 22 has N (N≧2) C-shaped ring members 311B made of a conductor, and has a structure in which a dielectric plate 312B is arranged between the ring members 311B arranged adjacent to each other in the opposite directions. In the example of FIG. 22, the resonator 301B is illustrated up to the point where three ring members 311B are layered. With such a structure, the resonator 301B can configure a series resonant circuit. The resonator 301B may be applied to other embodiments or modified examples such as the resonator 101 of the first embodiment.

[0072] Moreover, an insulating coating may be formed on each of the multiple resonators 301. FIG. 23 is a diagram showing an example of a cross section of a resonator 301B according to the second embodiment. FIG. 23 shows a side cross section of the resonator 301B shown in FIG. 21. An insulating coating (an example of a dielectric film) 313 is formed on the surface of the resonator 301B. The material of the coating 313 is, for example, ceramic. The thickness of the coating 313 is, for example, within a range of 0.001 mm to 2 mm. By forming the insulating coating 313 on each of the multiple resonators 301, abnormal discharge in each of the multiple resonators 301 can be suppressed.

[0073] The coating 313 may be formed so that the thickness 309a of the coating 313 covering the first ring member 311B is thinner than the thickness 309b of the coating 313 covering the second ring member 311B. In this case, plasma can be selectively generated on the first ring member 311B side where the coating 313 is thinner. For example, in the resonators 301 located at the outermost part of the resonator array structure 300, by arranging the resonators 301 so that the surface where the coating 313 is thinner is located on the inner side of the cell CS, plasma can be selectively generated on the inner side of the cell CS.

[0074] In the second embodiment, a cellular resonator array 300 is disposed in the internal space of the plasma generating section 48, and an antenna 56b is disposed outside the plasma compartment wall 54 on the side surface of the plasma generating section 48. In the second embodiment, by non-contact power supply from the antenna 56b to the resonator array 300 in the processing vessel 12, it is possible to realize high density plasma even in a so-called batch type plasma processing apparatus.

[0075] (Variations 9 to 12) Next, modifications 9 to 12 of the second embodiment will be described with reference to Figs. 24 to 27. Modifications 9 to 12 are modifications of the arrangement of the resonator array 300. In the plasma processing apparatus 1a in modifications 9 to 12, one or more of the size and arrangement of the resonator array 300 and the shape of the plasma gas dispersion nozzle 42 side of the processing vessel 12 are appropriately modified. Therefore, in modifications 9 to 12, the description of the overlapping configurations and operations of the components similar to those of the first and second embodiments will be omitted. Modifications 9 to 12 correspond to modifications 1 to 4 of the first embodiment.

[0076] FIG. 24 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the 9th modification. In the arrangement example 210 of the 9th modification shown in FIG. 24, the arrangement of the resonator array 300 of the second embodiment is moved to the opening 52 of the processing vessel 12 in the internal space of the plasma generating unit 48. That is, the resonator array 300 of the arrangement example 210 is arranged closer to the center of the processing vessel 12 than the position of the resonator array 300 of the second embodiment. That is, in the 9th modification, the wafer boat 20 side of the resonator array 300 is located closer to the wafer boat 20 side than the opening 52 of the processing vessel 12, and the plasma P is generated in the cell CS located between the two deposition gas dispersion nozzles 44. The direction of the magnetic field H from the antenna 56b is the Y-axis direction as in the second embodiment, and is substantially parallel to the base plate 320 of the resonator array 300.

[0077] FIG. 25 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the tenth modification. In the arrangement example 211 of the tenth modification shown in FIG. 25, the arrangement of the resonator array 300 of the second embodiment is moved to the wafer boat 20 side from the opening 52 of the processing vessel 12, and the size in the horizontal direction is increased to form a resonator array 300a. That is, the resonator array 300a is arranged not in the internal space of the plasma generating unit 48 but inside the cylinder of the processing vessel 12, and on the wafer boat 20 side from the two deposition gas dispersion nozzles 44. That is, in the tenth modification, as shown in FIG. 25, the plasma P is generated in the cell CS of the resonator array 300a on the wafer boat 20 side. The direction of the magnetic field H from the antenna 56b is the Y-axis direction as in the second embodiment, and is substantially parallel to the base plate 320a of the resonator array 300a.

[0078] 26 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 11. In an arrangement example 212 of Modification 11 shown in FIG. 26, the processing vessel 12 of Modification 10 is replaced with a processing vessel 12a in which the plasma generating unit 48 and the opening 52 are omitted. In addition, the processing vessel 12a has a plasma gas distribution nozzle 42a disposed between two deposition gas distribution nozzles 44 on its side wall. In Modification 11, as shown in FIG. 26, a plasma P is generated in a cell CS on the wafer boat 20 side of the resonator array 300a. The direction of the magnetic field H from the antenna 56b is the Y-axis direction as in the second embodiment, and is substantially parallel to the base plate 320a of the resonator array 300a.

[0079] FIG. 27 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the twelfth modification. In the arrangement example 213 of the twelfth modification shown in FIG. 27, the resonator array 300a of the eleventh modification is replaced by a plurality of resonator arrays 300b having a smaller horizontal size than the resonator array 300a, and the resonator arrays 300b are arranged along the outer periphery of the substrate W held by the wafer boat 20. For example, three resonator arrays 300b are arranged as shown in FIG. 27. The direction of the magnetic field H from the antenna 56b is the Y-axis direction as in the second embodiment, and is approximately parallel to the base plate 320b of the central resonator array 300b. At this time, the direction of the magnetic field H of the resonator arrays 300b arranged on both sides is a direction that obliquely penetrates the resonators 301 of the cells CS of the resonator array 300b, but each resonator 301 can resonate. Therefore, as shown in FIG. 27, plasma P is generated in the cells CS of each resonator array 300b on the wafer boat 20 side. As shown in the resonator array structures 300, 300a to 300b, the arrangement of the resonator array structures with respect to the substrate W has a degree of freedom.

[0080] (Variations 13 and 14) Next, modified examples 13 and 14 of the second embodiment will be described with reference to Figs. 28 and 29. Modified examples 13 and 14 are modified examples of antenna 56b. In modified examples 13 and 14, antennas 56c and 56d are provided instead of antenna 56b of the second embodiment. Therefore, in modified examples 13 and 14, the description of the overlapping configurations and operations of the same components as those of the first and second embodiments will be omitted.

[0081] Fig. 28 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 13. Fig. 29 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 14. Modification 13 shown in Fig. 28 and Modification 14 shown in Fig. 29 have antennas 56c and 56d instead of the antenna 56b of the second embodiment. The arrangement of the resonator array structure 300 of Modification 13 is similar to that of the second embodiment, and the arrangement of the resonator array structure 300 of Modification 14 is similar to that of Modification 9.

[0082] The antennas 56c and 56d are disposed on the outer side (outside the processing vessel 12) of the plasma partition wall 54 on the side of the plasma generating unit 48, facing each other so as to sandwich the plasma generating unit 48. Since the antennas 56c and 56d generate a magnetic field H, the magnetic field H penetrates the resonator array structure 300 in the Y-axis direction from both side surfaces. In contrast, in the antenna 56b of the second embodiment, the magnetic field H penetrates the resonator array structure 300 in the Y-axis direction from one side surface, so that the magnetic field H is absorbed by the resonator 301 of the cell CS closer to the antenna 56b, and the magnetic field H reaching the resonator 301 of the cell CS farther away is attenuated. That is, plasma density may occur in each cell CS of the resonator array structure 300. In the modified examples 13 and 14, the magnetic field H penetrates the resonator array structure 300 from both side surfaces, so that the gradient of the magnetic field H in the Y-axis direction is reduced, and the uniformity of the plasma can be improved.

[0083] (Variations 15 and 16) Next, modified examples 15 and 16 of the second embodiment will be described with reference to Figs. 30 and 31. Modified examples 15 and 16 are modified examples of antenna 56b. In modified example 15, antenna 57a and RF power supply 130b are provided instead of antenna 56b and RF power supply 130 of the second embodiment. Therefore, in modified example 15, the description of the overlapping configurations and operations of the same components as those of the first and second embodiments will be omitted. Modified example 15 corresponds to modified example 5 of the first embodiment.

[0084] Fig. 30 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 15. Modification 15 shown in Fig. 30 has an antenna 57a and an RF power supply 130b instead of the antenna 56b and the RF power supply 130 of the second embodiment.

[0085] The antenna 57a is disposed outside the plasma compartment wall 54 on the side of the plasma generating section 48 (outside the processing vessel 12) like the antenna 56b. The antenna 57a has a plurality of coils 57a-1 to 57a-n. The coils 57a-1 to 57a-n are wound, for example, in a loop shape. The openings of the coils 57a-1 to 57a-n may have any shape such as a circle, an ellipse, or a polygon (rectangle, triangle, etc.). The openings of the coils 57a-1 to 57a-n face the side (Y-axis direction) of the resonator array structure 300 disposed in the internal space of the plasma generating section 48. The coils 57a-1 to 57a-n are connected to an RF power source 130b and supplied with a source RF signal. The magnetic fields H generated by the coils 57a-1 to 57a-n are in the direction of the Y-axis shown in FIG. 30.

[0086] The coils 57a-1 to 57a-n correspond to, for example, the slots SL(1) to SL(n) shown in FIG. 19 and supply magnetic fields H (electromagnetic waves) to three rows of the resonators 301 corresponding to the slots SL(1) to SL(n) of the resonator array structure 300.

[0087] The RF power supply 130b is coupled to the coils 57a-1 to 57a-n of the antenna 57a and configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit. The RF power supply 130b can supply a source RF signal to each of the coils 57a-1 to 57a-n individually. The RF power supply 130b generates source RF signals of different frequencies for each of the coils 57a-1 to 57a-n. In this case, the resonator array structure 300 changes the resonance frequency of the resonators 301 for every three rows of the resonators 301 corresponding to the slots SL(1) to SL(n) as in the resonator array structure 300c shown in FIG. 32 of the modified example 17 described later. That is, the antenna 57a and the RF power supply 130b of the modified example 15 are combined with the resonator array structure 300c of the modified example 17 described later. In this manner, by changing the source RF signals supplied to the coils 57a-1 to 57a-n, respectively, the plasma density (processing speed) between the plurality of substrates W can be arbitrarily controlled.

[0088] 31 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 16. In Modification 16, an antenna 57b and RF power supplies 130c and 130d are provided instead of the antenna 56b and the RF power supply 130 of the second embodiment. Therefore, in Modification 16, the description of the overlapping configurations and operations of the components similar to those of the first and second embodiments will be omitted.

[0089] 31 has an antenna 57b and RF power sources 130c, 130d instead of the antenna 56b and the RF power source 130 of the second embodiment. In the modification 16, the coils 57a-1 to 57a-n of the antenna 57a of the modification 15 are alternately arranged in a staggered manner so as to sandwich the plasma generating unit 48 therebetween, similar to the antennas 56c, 56d of the modification 14.

[0090] The antenna 57b, like the antennas 56c and 56d, is disposed outside the plasma partition wall 54 on the side of the plasma generating unit 48 (outside the processing vessel 12). The antenna 57b has a plurality of coils 57b-1 to 57b-n. The coils 57b-1 to 57b-n are wound in a loop shape. The openings of the coils 57b-1 to 57b-n may have any shape such as a circle, an ellipse, or a polygon (such as a square or a triangle). The openings of the coils 57b-1 to 57b-n face the side (Y-axis direction) of the resonator array structure 300 disposed in the internal space of the plasma generating unit 48. For example, the coils 57b-1, 57b-3, . . . , 57b-n are disposed on the left side of the processing vessel 12 in FIG. 31, and the coils 57b-2, 57b-4, . . . , 57b-(n-1) are disposed on the right side of the processing vessel 12. An RF power supply 130c is connected to the coils 57b-1, 57b-3, . . . , 57b-n, and a source RF signal is supplied to the coils 57b-2, 57b-4, . . . , 57b-(n-1). An RF power supply 130d is connected to the coils 57b-2, 57b-4, . . . , 57b-(n-1), and a source RF signal is supplied to the coils 57b-2, 57b-4, . . . , 57b-(n-1). The RF power supplies 130c and 130d are obtained by dividing the RF power supply 130b according to the arrangement of the coils 57d-1 to 57d-n. The RF power supplies 130c and 130d may be a single RF power supply 130b. Each magnetic field H generated by the coils 57b-1 to 57b-n is in the direction of the Y-axis shown in FIG.

[0091] (Variations 17 to 20) Next, modified examples 17 to 20 of the second embodiment will be described with reference to Fig. 32 to Fig. 35. Modified examples 17 to 20 are modifications of the resonator array 300. In modified examples 17 to 20, resonator arrays 300c to 300f are provided instead of the resonator array 300 of the second embodiment. Therefore, in modified examples 17 to 20, a description of the overlapping configurations and operations of components similar to those of the second embodiment will be omitted.

[0092] FIG. 32 is a diagram showing an example of the configuration of a resonator array structure according to Modification 17. The resonator array structure 300c of Modification 17 shown in FIG. 32 has resonators 301C(1) to 301C(n) with different resonant frequencies for every three rows of the arrangement of cells CS corresponding to slots SL(1) to SL(n). That is, the resonator 301C(1) of the cell CS corresponding to slot SL(1) has a resonant frequency Fr(1), and is supplied with a source RF signal of output frequency Fo(1) from, for example, the coil 57a-1 of Modification 15. Similarly, the resonator 301C(2) of the cell CS corresponding to slot SL(2) has a resonant frequency Fr(2), and is supplied with a source RF signal of output frequency Fo(2) from, for example, the coil 57a-2 of Modification 15. Similarly, the resonator 301C(n) of the cell CS corresponding to the slot SL(n) has a resonant frequency Fr(n), and for example, a source RF signal of output frequency Fo(n) is supplied from the coil 57a-n of the modification 15. Note that the resonator array structure 300c may have a base plate 320c divided for every three rows of the cells CS corresponding to the slots SL(1) to SL(n). As described above, in the modifications 15 and 17, the plasma density (processing speed) between the multiple substrates W can be arbitrarily controlled.

[0093] FIG. 33 is a diagram showing an example of the configuration of a resonator array structure according to Modification 18. In the resonator array structure 300d of Modification 18 shown in FIG. 33, cells CS formed of resonators 301C(1) and 301C(2) whose resonant frequencies are changed are arranged in a row corresponding to the outer periphery of the substrate W held on the wafer boat 20 and a row corresponding to the center. The resonators 301C(1) and 301C(2) are arranged on a base plate 320d to form cells CS. For example, cells CS formed of resonators 301C(2) are arranged in a row corresponding to L3 shown in FIG. 33, and cells CS formed of resonators 301C(1) are arranged in the other rows. In this case, the resonator 301C(1) has a resonant frequency Fr(1), and a source RF signal of an output frequency Fo(1) is supplied to the resonator 301C(2). The resonator 301C(2) has a resonant frequency Fr(2), and a source RF signal of an output frequency Fo(2) is supplied to the resonator 301C(2). In the eighteenth modification, for each substrate W held in each of the slots SL(1) to SL(n) of the wafer boat 20, the plasma density (processing speed) at the outer periphery and the center can be controlled in the same manner.

[0094] 34 is a diagram showing an example of the configuration of a resonator array according to Modification 19. In a resonator array 300e according to Modification 19 shown in FIG. 34, a through hole 308 is provided in each of a plurality of cells CS arranged in a lattice pattern. The through hole 308 is provided in the center of the cell CS so as to penetrate a base plate 320c. In the example of FIG. 34, 3n rows of cells CS are arranged in the row direction so as to correspond to the slots SL(1) to SL(n) of the wafer boat 20, respectively. That is, in the resonator array 300e according to Modification 19, the plasma gas injected from the gas injection hole 42A of the plasma gas distribution nozzle 42 flows more easily toward the center of the processing vessel 12.

[0095] Fig. 35 is a diagram showing an example of the configuration of a resonator array structure according to Modification 20. A resonator array structure 300f of Modification 20 shown in Fig. 35 is obtained by filling cells CSf corresponding to boundaries between slots SL(1) to SL(n) among the multiple cells CS with a dielectric 321 in the resonator array structure 300c of Modification 17. The dielectric 321 is filled in the cell CSf from the base plate 320f to the upper end of the resonator 301C, for example. Since plasma is not generated in the cell CSf filled with the dielectric 321, plasma interference between the slots SL can be suppressed.

[0096] (RF power supply system) Next, an RF power supply system according to the first and second embodiments will be described with reference to Fig. 36 to Fig. 41. Fig. 36 is a diagram showing an example of the configuration of an RF power supply system according to the first and second embodiments. Note that Fig. 36 uses the plasma processing apparatus 1 according to the first embodiment as an example. In addition, in the description of Fig. 36 to Fig. 41, processing gases and the like other than those of the RF power supply system are omitted.

[0097] As shown in FIG. 36, in the RF power supply system, the power setting Pset and the waveform setting of the electromagnetic wave according to the recipe are input from the control device 11 to the RF power supply 130. The waveform setting is, for example, waveform data for setting the center frequency, the waveform shape, and the like of the electromagnetic wave. The RF power supply 130 generates an electromagnetic wave according to the input power setting Pset and the waveform setting, and outputs it to the antenna 56. The antenna 56 generates a magnetic field H, which is fed to the resonator array structure 100 in the processing vessel 12. The resonator array structure 100 generates a plasma P, and the substrates W1 to Wn are processed by the generated plasma. The RF power supply system in FIG. 36 uses one antenna 56 and a resonator array structure 100 having one resonant frequency, and the RF power supply 130 outputs an electromagnetic wave of a single-peak waveform of a single frequency.

[0098] FIG. 37 is a diagram showing an example of the settings of the resonant frequencies of the resonators and the output of the RF power supply according to the first and second embodiments. As shown in FIG. 37, the resonators 101 can be configured to have different resonant frequencies Fr(1) to Fr(10) represented by graphs 341 to 350 in the range of, for example, 2.0 GHz to 2.5 GHz. In the RF power supply system of FIG. 36, the resonators 101 of the resonator array structure 100 are configured to have one resonant frequency Fr(1), so that the control device 11 outputs a waveform setting of a power setting Pset=P1 of the output frequency Fo(1) to the RF power supply 130. When the waveform setting is input, the RF power supply 130 generates an electromagnetic wave of power P1 as shown in graph 341p of FIG. 37 and outputs it to the antenna 56. In the antenna 56, a magnetic field H is generated and power is supplied to the resonator array structure 100 in the processing vessel 12. The resonators 101 of the resonator array structure 100 have one resonant frequency Fr(1) and therefore resonate over the entire range, and the substrates W1 to Wn are processed by the generated plasma.

[0099] FIG. 38 is a diagram showing an example of the configuration of an RF power supply system according to the first and second embodiments. FIG. 38 corresponds to, for example, the fifth and sixth modified examples of the first embodiment, and will be described as an example in which a resonator array structure 100d is used. In the RF power supply system shown in FIG. 38, one antenna 56 and a resonator array structure 100d having resonant frequencies Fr(1) to Fr(n) are used, and an RF power supply 130 outputs an electromagnetic wave of a single peak waveform of a variable single frequency. In the resonator array structure 100d, a plurality of resonators 101 at positions corresponding to the slots SL(1) to SL(n) have different resonant frequencies Fr(1) to Fr(n). The RF power supply 130 sweeps the output frequencies Fo(1) to Fo(n) using FM modulation or the like, and outputs an electromagnetic wave of a single peak waveform of the output frequencies Fo(1) to Fo(n).

[0100] FIG. 39 is a diagram showing an example of the settings of the resonant frequencies of the resonators and the output of the RF power supply according to the first and second embodiments. As shown in FIG. 39, the resonators 101 of the resonator array 100d are configured to have resonant frequencies Fr(1) to Fr(10). In the RF power supply system of FIG. 38, the control device 11 outputs a waveform setting with power settings Pset=P1 to P10 of output frequencies Fo(1) to Fo(10) to the RF power supply 130. When the waveform setting is input, the RF power supply 130 sweeps and generates electromagnetic waves with powers P1 to P10 as shown in graphs 341p to 350p of FIG. 39, and outputs the electromagnetic waves to the antenna 56. Note that the powers P4 to P10 (vertical axis) of the graphs 344p to 350p are not shown. In the antenna 56, a magnetic field H is generated according to the sweep, and power is supplied to the resonator array 100d in the processing vessel 12. The multiple resonators 101 of the resonator array structure 100d have resonant frequencies Fr(1) to Fr(10), and therefore resonate with the resonable output frequencies Fo(1) to Fo(10). That is, in the RF power supply system of Fig. 38, the plasma P generated in each of the slots SL(1) to SL(10) can be controlled by the output frequencies Fo(1) to Fo(10). That is, in the RF power supply system of Fig. 38, a specific substrate W among the multiple substrates W can be specified for plasma processing.

[0101] FIG. 40 is a diagram showing an example of the settings of the resonant frequency of the resonator and the output of the RF power supply according to the first and second embodiments. FIG. 40 shows a case where the RF power supply 130 outputs an electromagnetic wave of a broadband waveform with multi-tone in the RF power supply system shown in FIG. 38. The control device 11 outputs a waveform setting with a power setting Pset=P1-P10 of the output frequencies Fo(1)-Fo(10) to the RF power supply 130. When the waveform setting is input, the RF power supply 130 generates electromagnetic waves of powers P1-P10 as shown in graphs 341p-350p in FIG. 40 as multi-tones and outputs them to the antenna 56. Note that the powers P4-P10 (vertical axis) of the graphs 344p-350p are not shown. In the antenna 56, a magnetic field H is generated according to the multi-tones, and power is supplied to the resonator array structure 100d in the processing vessel 12. The multiple resonators 101 of the resonator array structure 100d have resonant frequencies Fr(1) to Fr(10), and therefore resonate with the resonant output frequencies Fo(1) to Fo(10). In other words, in the RF power feeding system of Fig. 38, even when an electromagnetic wave with a broadband waveform that becomes a multi-tone is used, the plasma generated in each of the slots SL(1) to SL(10) can be controlled in the same way as in the case of sweeping.

[0102] FIG. 41 is a diagram showing an example of the configuration of an RF power supply system according to Modifications 5, 15, and 16. FIG. 41 corresponds to Modification 5 of the first embodiment and Modifications 15 and 16 of the second embodiment, and describes an example in which a resonator array structure 100d is used. The RF power supply system shown in FIG. 41 uses an antenna 57 (coils 57-1 to 57-n) and a resonator array structure 100d having resonant frequencies Fr(1) to Fr(n), and an RF power supply 130a outputs electromagnetic waves of single peak waveforms of different frequencies to the coils 57-1 to 57-n. In the resonator array structure 100d, a plurality of resonators 101 at positions corresponding to the slots SL(1) to SL(n) have different resonant frequencies Fr(1) to Fr(n). The RF power supply 130a outputs electromagnetic waves of single peak waveforms of output frequencies Fo(1) to Fo(n) to the coils 57-1 to 57-n, respectively. The resonators 101 of the resonator array structure 100d have resonant frequencies Fr(1) to Fr(n), and therefore resonate with the resonable output frequencies Fo(1) to Fo(n). That is, in the RF power supply system of FIG. 41, the plasma P generated in each of the slots SL(1) to SL(n) corresponding to the coils 57-1 to 57-n can be controlled by the output frequencies Fo(1) to Fo(n). That is, in the RF power supply system of FIG. 41, a specific substrate W among the multiple substrates W can be specified and processed. When performing distribution control within the surface of one substrate W, the RF power supply 130a may output electromagnetic waves of a broadband waveform that become multi-tones of different frequencies to each of the coils 57-1 to 57-n. The RF power supply systems shown in FIG. 36 to FIG. 41 may be combined with the third and fourth embodiments and each modified example described later within a range that does not contradict each other.

[0103] Third embodiment In the first embodiment described above, the resonator array 100 is disposed on the side surface of the processing vessel 12, but a resonator array may be disposed in each of the slots SL(1) to SL(n) of the wafer boat. An embodiment using such an arrangement of resonator arrays will be described as the third embodiment. Note that the plasma processing apparatus in the third embodiment is similar to the first embodiment described above except for the configuration of the wafer boat, the configuration and arrangement of the antenna, and the arrangement and configuration of the resonator array, and therefore a description of the overlapping configurations and operations will be omitted.

[0104] Fig. 42 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to a third embodiment. Fig. 43 is a schematic horizontal cross-sectional view showing an example of the configuration of a plasma processing apparatus according to a third embodiment. Note that while the apparatus body 10 of the first embodiment shown in Fig. 1 has been described using a vertical cross-section in the X-axis direction, the apparatus body 10b of the third embodiment shown in Fig. 42 will be described using a vertical cross-section in the Y-axis direction.

[0105] As shown in FIG. 42, an apparatus body 10b of a plasma processing apparatus 1b of the third embodiment has a wafer boat 20B, an antenna 56e, and a resonator array structure 400 instead of the wafer boat 20, the antenna 56, and the resonator array structure 100 of the first embodiment.

[0106] 42, the wafer boat 20B holds, from top to bottom, the resonator array structure 400, the substrate W, the resonator array structure 400, the substrate W, ..., in an alternating manner. That is, in the wafer boat 20B, the resonator array structure 400 is provided for each of the multiple substrates W on a plane parallel to the substrates W.

[0107] The antenna 56e is disposed on the side surface (outside the processing vessel 12) of the processing vessel 12 so as to cover a width corresponding to the resonator array structure 400 held by the wafer boat 20B. The antenna 56e is also formed to be sufficiently long in the vertical direction so as to cover all the resonator array structures 400 held by the wafer boat 20B in the height direction in the length direction (vertical direction). The antenna 56e includes, for example, a solenoid coil. That is, the antenna 56e is wound in a loop shape. The opening of the antenna 56e may be any shape among a circle, an ellipse, and a polygon (rectangle, triangle, etc.). The RF power source 130 is connected to the antenna 56e, and a source RF signal is supplied thereto. The magnetic field H generated by the antenna 56e is in the direction of the Y axis shown in FIG. 42 and FIG. 43. The plasma generating unit 48 in the first embodiment is a piping unit 48a in which the plasma gas dispersion nozzle 42 is disposed in the third embodiment.

[0108] FIG. 44 is a side view showing an example of the configuration of the resonator array structure according to the third embodiment. FIG. 45 is a plan view showing an example of the configuration of the resonator array structure according to the EE cross section of FIG. 44. As shown in FIG. 44, the resonator array structure 400 is arranged on the wafer boat 20B such that the base plate 420 faces upward and the multiple resonators 401 face downward. The resonator array structure 400 is a cell-type resonator array structure similar to the resonator array structure 300 of the second embodiment. As shown in FIG. 45, in the resonator array structure 400, multiple resonators 401 are arranged vertically on a circular base plate 420 having approximately the same diameter as the substrate W, forming multiple cells CS. Note that the base plate 420 may be polygonal (rectangle, triangle, etc.). In addition, in the resonator array structure 400, it is preferable that the range in which the cells CS exist is larger than the diameter of the substrate W. The resonator array structure 400 is located on the upper part of the substrate W with the openings of the cells CS located on the lower side. 42 and 43, the resonator array structure 400 has a magnetic field H passing through the side, i.e., the multiple resonators 401, so that plasma P is generated in each cell CS. The substrate W is processed by the plasma P generated in the cell CS. Note that the configuration of the resonator 401 is similar to that of the resonator 301, so a description thereof will be omitted.

[0109] In this manner, in the plasma processing apparatus 1b of the third embodiment, by non-contact power supply to the resonator array 400 arranged for each substrate W on the wafer boat 20B, it is possible to realize high density plasma even in a so-called direct plasma type plasma processing apparatus. Also, the direction in which the plasma P is generated can be selected depending on the opening direction of the cells CS of the resonator array 400. Also, the distance between the resonator array 400 and the substrate W on the wafer boat 20B can be set arbitrarily.

[0110] (Variation 21) Next, Modification 21 will be described with reference to Fig. 46. Modification 21 is a modification of antenna 56e. In Modification 21, antennas 56f and 56g are provided instead of antenna 56e of the third embodiment. Therefore, in Modification 21, for components similar to those of the first to third embodiments, descriptions of the overlapping configurations and operations will be omitted.

[0111] Fig. 46 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 21. Modification 21 shown in Fig. 46 has antennas 56f and 56g instead of the antenna 56e of the third embodiment. The arrangement of the resonator array structure 400 of Modification 21 is similar to that of the third embodiment.

[0112] The antennas 56f and 56g are disposed on the side of the processing vessel 12 (outside the processing vessel 12) so as to cover a width corresponding to the resonator array 400 held by the wafer boat 20B, facing each other across the processing vessel 12. Since the antennas 56f and 56g generate a magnetic field H, the magnetic field H penetrates the resonator array 400 in the Y-axis direction from both sides thereof. In contrast, in the antenna 56e of the third embodiment, the magnetic field H penetrates the resonator array 400 in the Y-axis direction from one side thereof, so that the magnetic field H is absorbed by the resonator 401 of the cell CS closer to the antenna 56e, and the magnetic field H reaching the resonator 401 of the cell CS farther away is attenuated. That is, plasma density may occur in each cell CS of the resonator array 400. In the modification 21, the magnetic field H penetrates the resonator array 400 from both sides thereof, so that the gradient of the magnetic field H in the Y-axis direction is reduced, and the uniformity of the plasma can be improved.

[0113] (Variations 22 and 23) Next, modified examples 22 and 23 of the third embodiment will be described with reference to Figs. 47 and 48. Modified examples 22 and 23 are modified examples of antenna 56e. In modified example 22, antenna 57c and RF power supply 130b are provided instead of antenna 56e and RF power supply 130 of the third embodiment. Therefore, in modified example 22, for components similar to those of the first to third embodiments, a description of the overlapping configurations and operations will be omitted. Modified example 22 corresponds to modified example 5 of the first embodiment and modified example 15 of the second embodiment.

[0114] Fig. 47 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 22. Modification 22 shown in Fig. 47 has an antenna 57c and an RF power supply 130b instead of the antenna 56e and the RF power supply 130 of the third embodiment.

[0115] The antenna 57c, like the antenna 56e, is arranged on the side surface of the processing vessel 12 (outside the processing vessel 12) so as to cover a width corresponding to the resonator array structure 400 held on the wafer boat 20B. The antenna 57c has a plurality of coils 57c-1 to 57c-n. The coils 57c-1 to 57c-n are wound, for example, in a loop shape. The openings of the coils 57c-1 to 57c-n may have any shape such as a circle, an ellipse, or a polygon (such as a square or a triangle). The openings of the coils 57c-1 to 57c-n face the side surface (Y-axis direction) of the resonator array structure 400 held on the wafer boat 20B. The coils 57c-1 to 57c-n are connected to an RF power source 130b and supplied with a source RF signal. The magnetic fields H generated by the coils 57c-1 to 57c-n are in the direction of the Y-axis shown in FIG.

[0116] The coils 57c-1 to 57c-n correspond to, for example, each of the resonator array structures 400 held on the wafer boat 20B, and supply each magnetic field H (electromagnetic wave) to each of the resonator array structures 400. Each of the resonator array structures 400 of the modification 22 has a different resonant frequency.

[0117] The RF power supply 130b is coupled to the coils 57c-1 to 57c-n of the antenna 57c in the same manner as in the fifteenth modification of the second embodiment, and is configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit. The RF power supply 130b can supply a source RF signal to each of the coils 57c-1 to 57c-n individually. The RF power supply 130b generates source RF signals of different frequencies for each of the coils 57c-1 to 57c-n. In this case, the resonator array structure 400 resonates due to the magnetic fields H of the corresponding coils 57c-1 to 57c-n, since the resonant frequencies of the resonators 401 are different. In this way, by changing the source RF signal supplied to each of the coils 57c-1 to 57c-n, the plasma density (processing speed) between the multiple substrates W can be arbitrarily controlled.

[0118] 48 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 23. In Modification 23, an antenna 57d and RF power supplies 130c, 130d are provided instead of the antenna 56e and the RF power supply 130 of the third embodiment. Therefore, in Modification 23, a description of the configurations and operations of the same components as those of the first to third embodiments will be omitted.

[0119] 48 has an antenna 57d and RF power supplies 130c, 130d instead of the antenna 56e and the RF power supply 130 of the third embodiment. In the modification 23, the coils 57c-1 to 57c-n of the antenna 57c of the modification 22 are alternately arranged in a staggered manner so as to sandwich the processing vessel 12 therebetween, similar to the antennas 56f, 56g of the modification 21.

[0120] The coils of the antenna 57d, like the antennas 56f and 56g, are arranged on the side surface (outside the processing vessel 12) of the processing vessel 12, facing each other across the processing vessel 12, so as to cover a width corresponding to the resonator array structure 400 held on the wafer boat 20B. The antenna 57d has a plurality of coils 57d-1 to 57d-n. The coils 57d-1 to 57d-n are each wound in a loop shape. The openings of the coils 57d-1 to 57d-n may be any shape selected from a circle, an ellipse, and a polygon (such as a square or a triangle). The openings of the coils 57d-1 to 57d-n face the side surface (Y-axis direction) of the resonator array structure 400 held on the wafer boat 20B. For example, the coils 57d-1, 57d-3, . . . , 57d-n are disposed on the left side of the processing vessel 12 in FIG. 48, and the coils 57d-2, 57d-4, . . . , 57d-(n-1) are disposed on the right side of the processing vessel 12. The coils 57d-1, 57d-3, . . . , 57d-n are connected to the RF power supply 130c and supplied with a source RF signal. The coils 57d-2, 57d-4, . . . , 57d-(n-1) are connected to the RF power supply 130d and supplied with a source RF signal. The RF power supplies 130c and 130d are obtained by dividing the RF power supply 130b according to the arrangement of the coils 57d-1 to 57d-n. The RF power supplies 130c and 130d may be one RF power supply 130b. The magnetic fields H generated by the coils 57d-1 to 57d-n are oriented in the Y-axis direction shown in FIG.

[0121] (Variations 24 to 27) Next, modified examples 24 to 27 of the third embodiment will be described with reference to Fig. 49 to Fig. 53. Modified examples 24 to 27 are modified examples of the resonator array 400. Modified examples 24 to 26 are provided with resonator arrays 400a to 400c instead of the resonator array 400 of the third embodiment. Modified example 27 illustrates a resonator 401A applicable to the resonator arrays 400a to 400c instead of the resonator 401. Therefore, in modified examples 24 to 27, the same configurations and operations of the same components as those of the third embodiment will not be described.

[0122] Fig. 49 is a plan view showing an example of the configuration of a resonator array structure according to Modification 24. In the resonator array structure 400a of Modification 24 shown in Fig. 49, for example, a plurality of resonators 402 are arranged in four portions of the cells CS in the center of the base plate 420, and a plurality of resonators 401 are arranged in other portions to form the cells CS. The resonators 402 are resonators having a different resonant frequency from the resonators 401. In other words, the resonator array structure 400a can perform concentration control of plasma density (control of processing speed) at the center and outer periphery of the substrate W by using the RF power source 130a that outputs electromagnetic waves of two output frequencies Fo(1) and Fo(2) in a sweep or broadband manner.

[0123] FIG. 50 is a plan view showing an example of the configuration of a resonator array according to the modification 25. FIG. 51 is a diagram showing an example of the relationship between the resonator array according to the modification 25 and a substrate. In the resonator array 400b of the modification 25 shown in FIG. 50, a through hole 408 is provided in each of a plurality of cells CS arranged in a lattice pattern. The through hole 408 is provided in the center of the cell CS and is formed so as to penetrate the base plate 420b. Here, as shown in FIG. 51, the resonator array 400b is viewed from the side in a state held on the wafer boat 20B. In the resonator array 400b, since the through hole 408 is provided in the base plate 420b, plasma processing can be performed on both sides, that is, the plasma generating surface PR1 on the resonator 401 side (lower side) and the plasma generating surface PR2 on the base plate 420b side (upper side). Note that the plasma density is higher on the plasma generating surface PR1 side than on the plasma generating surface PR2.

[0124] Fig. 52 is a plan view showing an example of the configuration of the resonator array structure according to the modification 26. The resonator array structure 400c of the modification 26 shown in Fig. 52 is obtained by omitting the base plate 420b from the resonator array structure 400b of the modification 25. In the resonator array structure 400c, the resonators 401 are connected by, for example, welding. Since the resonator array structure 400c does not have the base plate 420b, the plasma density is equal on the upper and lower sides of the resonator array structure 400c. For example, if the substrate W arranged on the upper side is held upside down on the wafer boat 20B, two substrates W, one on the top and one on the bottom, can be plasma-processed by one resonator array structure 400c.

[0125] FIG. 53 is a diagram showing an example of the configuration of a resonator 401A according to Modification 27. The resonator 401A shown in FIG. 53 has a structure in which two C-shaped ring members 411A made of a conductor are arranged adjacent to each other in the opposite directions, and a dielectric plate 412A is arranged between the ring members 411A. That is, in the resonator 401A, the dielectric plate 412A is sandwiched between the two C-shaped ring members 411A arranged in the opposite directions. Capacitor equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 411A and on both ends of each ring member 411A, and a coil equivalent element is formed along each ring member 411A. This allows the resonator 401A to form a series resonant circuit. In addition, the resonator 401A has a through hole 415A in the center. By providing the through hole 415A, gas and plasma can flow in and out between the adjacent cells CS in the cell CS formed by the resonator 401A. It can also be expressed that resonator 401A is formed for each set of two C-shaped ring members 411A.

[0126] (Fourth embodiment) Fig. 54 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the fourth embodiment. As shown in Fig. 54, a main body 10c of a plasma processing apparatus 1c of the fourth embodiment has an antenna 56h and a resonator array structure 500 instead of the antenna 56e and the resonator array structure 400 of the third embodiment.

[0127] The antenna 56h is disposed at the upper part of the processing vessel 12, for example, at the upper part of the gas outlet 68 (outside the processing vessel 12), so as to cover a width corresponding to the diameter of the resonator array structure 400 held by the wafer boat 20B. The antenna 56h includes, for example, a solenoid coil. That is, the antenna 56h is wound in a loop shape. The opening of the antenna 56h may be any shape among a circle, an ellipse, a polygon (rectangle, triangle, etc.), etc. The RF power source 130 is connected to the antenna 56h (not shown) and a source RF signal is supplied. The magnetic field H generated by the antenna 56h is in the direction of the Z axis shown in FIG. 54.

[0128] (Variation 28) Fig. 55 is a schematic vertical cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 28. As shown in Fig. 55, a main body 10d of a plasma processing apparatus 1d of Modification 28 has an antenna 56i and a resonator array structure 500 instead of the antenna 56e and the resonator array structure 400 of the third embodiment.

[0129] The antenna 56i is disposed outside the processing vessel 12 so as to surround the side of the processing vessel 12. That is, the processing vessel 12 is disposed inside the solenoid coil of the antenna 56i. That is, the antenna 56i is wound in a loop shape. The antenna 56i is formed to be sufficiently long in the vertical direction so as to cover all the resonator array structures 500 held on the wafer boat 20B in the height direction. The opening of the antenna 56i may be any shape among a circle, an ellipse, a polygon (rectangle, triangle, etc.), etc. The RF power source 130 is connected to the antenna 56i (not shown) and a source RF signal is supplied. The magnetic field H generated by the antenna 56i is in the direction of the Z axis shown in FIG. 55.

[0130] FIG. 56 is a side view showing an example of the configuration of a resonator array according to the fourth embodiment and the twenty-eighth modified example. FIG. 57 is a plan view showing an example of the configuration of a resonator array according to the FF cross section of FIG. 56. As shown in FIG. 56, the resonator array 500 is a planar resonator array similar to the resonator array 100 according to the first embodiment. As shown in FIG. 57, the resonators 501 are arranged on the same plane in the flat resonator array 500. That is, the resonators 501 are arranged on a plane parallel to the longitudinal surface of the resonator array 500. That is, when viewed from the lower substrate W side of the wafer boat 20B, the C-shaped ring members 511 shown in a transparent manner are arranged in a lattice shape so that the C is visible. The resonator array 500 is a circle having approximately the same diameter as the substrate W. The resonator array 500 may be a polygon (such as a square or a triangle). Moreover, in the resonator array structure 500, it is preferable that the range in which the resonators 501 exist is larger than the diameter of the substrate W. As shown in Fig. 54 and Fig. 55, a magnetic field H passes through the multiple resonators 501 of the resonator array structure 500, which is a plane, and thus plasma is generated on the plane. The substrate W is processed by the generated plasma. Note that the configuration of the resonator 501 is similar to that of the resonator 101, and therefore a description thereof will be omitted.

[0131] The first surface 506 of the resonator array 500 faces the lower substrate W side, which is the processing target in the wafer boat 20B, and the second surface 507 faces the upper substrate W side, which is not the processing target in the wafer boat 20B. That is, the resonator array 500 is arranged so that the first surface 506 faces downward and the second surface 507 faces upward. The resonator array 500 is formed so that the thickness of the dielectric from the first C-shaped ring member 511 to the first surface 506 is thinner than the thickness of the dielectric from the second C-shaped ring member 511 to the second surface 507, as in the resonator array 100. This allows the resonator array 500 to selectively generate plasma on the first surface 506 side, which is the lower substrate W side, which is the processing target in the wafer boat 20B. That is, the resonator array 500 can control the plasma generation surface by the dielectric thickness from each ring member 511 of the resonator 501 to the surface.

[0132] In the fourth embodiment, from the top of the resonator array structure 500 held on the wafer boat 20B, each resonator 501 resonates at a corresponding frequency, absorbs the magnetic field H, and generates plasma, and the remaining magnetic field H (different frequency) resonates with the next resonator array structure 500. That is, the RF power supply 130 of the fourth embodiment supplies electromagnetic waves to the multiple resonator array structures 500 held on the wafer boat 20B to resonate each resonator 501. As a result, in the fourth embodiment, plasma is generated in each resonator array structure 500 held on the wafer boat 20B, and multiple substrates W are processed.

[0133] In the modification 28, a magnetic field H passing through a solenoid coil of the antenna 56i is supplied to each resonator array 500 held on the wafer boat 20B. Each resonator 501 of each resonator array 500 resonates to absorb the magnetic field H, generating plasma. That is, the RF power supply 130 of the modification 28 supplies electromagnetic waves to the multiple resonator arrays 500 held on the wafer boat 20B to resonate each resonator 501. As a result, in the modification 28, plasma is generated in each resonator array 500 held on the wafer boat 20B, and multiple substrates W are processed.

[0134] (Variations 29 and 30) Next, modified examples 29 and 30 of the fourth embodiment will be described with reference to Fig. 58 to Fig. 60. Modified examples 29 and 30 are modified examples of a resonator array 500. In modified examples 29 and 30, resonator arrays 500a and 500b are provided, respectively, instead of the resonator array 400 of the fourth embodiment. In modified examples 29 and 30, descriptions of the configurations and operations of components similar to those of the first to fourth embodiments will be omitted.

[0135] Fig. 58 is a plan view showing an example of the configuration of a resonator array structure according to Modification 29. In a resonator array structure 500a of Modification 29 shown in Fig. 58, for example, four resonators 502 are arranged in the center of the resonator array structure 500a, and a plurality of resonators 501 are arranged in other parts. The resonators 502 have a different resonant frequency from the resonators 501. In other words, the resonator array structure 500a can perform plasma density control (control of processing speed) between the center and outer periphery of the substrate W by using an RF power source 130a that outputs electromagnetic waves of two output frequencies Fo(1) and Fo(2) in a sweep or broadband manner.

[0136] FIG. 59 is a plan view showing an example of the configuration of a resonator array according to the modification 30. FIG. 60 is a diagram showing an example of the relationship between the resonator array according to the modification 30 and a substrate. In the resonator array 500b of the modification 30 shown in FIG. 59, a through hole 508 is provided in each of a plurality of resonators 503 arranged in a lattice pattern. The through hole 508 is provided in the center of the resonator 503, and is formed so as to penetrate the dielectric material at the center of the two C-shaped ring members 511. That is, the through hole 508 penetrates the first surface 506a and the second surface 507a of the resonator array 500b. Here, as shown in FIG. 60, the resonator array 500b held on the wafer boat 20B is viewed from the side. Since the resonator array 500b has the through-holes 508, plasma processing can be performed on both sides, that is, the plasma generating surface PR3 on the first surface 506a side (lower side) and the plasma generating surface PR4 on the second surface 507a side (upper side). When plasma is generated on both sides of the resonator array 500b, the thickness of the dielectric from each ring member 511 to the surface is made uniform. In this case, the plasma density is equal on the plasma generating surfaces PR3 and PR4.

[0137] (RF power supply system of the fourth embodiment) Next, an RF power supply system according to the fourth embodiment will be described with reference to Fig. 61. Fig. 61 is a diagram showing an example of the configuration of an RF power supply system according to the fourth embodiment. In the description of Fig. 61, processing gases and the like other than the RF power supply system are omitted.

[0138] The RF power supply system shown in FIG. 61 uses one antenna 56h and a resonator array 500 having resonant frequencies Fr(1)-Fr(n), and the RF power supply 130 outputs an electromagnetic wave with a single peak waveform of a variable single frequency. In each of the resonator arrays 500 corresponding to the slots SL(1)-SL(n), the resonators 501 have different resonant frequencies Fr(1)-Fr(n). The RF power supply 130 sweeps the output frequencies Fo(1)-Fo(n) using FM modulation or the like, and outputs an electromagnetic wave with a single peak waveform of the output frequencies Fo(1)-Fo(n). In the RF power supply system shown in FIG. 61, from the top, among the resonator arrays 500 held on the wafer boat 20B, each resonator 501 resonates at a corresponding frequency, absorbing the magnetic field H and generating plasma P, and the remaining magnetic field H (different frequency) resonates with the next resonator array 500. At this time, the plasma P generated in each resonator array 500 has a positive or negative refractive index that allows the electromagnetic wave to penetrate. In the RF power supply system shown in FIG. 61, the RF power source 130 may output an electromagnetic wave having a broadband waveform that is a multi-tone. In addition, an RF power supply system similar to that shown in FIG. 61 can be used when the antenna 56i of the modification 29 is used. Thus, in the RF power supply system shown in FIG. 61, power is supplied collectively from the serial direction to the resonator array 500, but the plasma generated in each of the slots SL(1) to SL(n) can be controlled.

[0139] According to each of the above-described embodiments, the plasma processing apparatus (plasma processing apparatus 1, 1a to 1d) includes a processing vessel (processing vessel 12, 12a) at least a portion of which is made of a first dielectric, a substrate holding unit (wafer boat 20, 20B) configured to hold a plurality of substrates W in the processing vessel, an electromagnetic wave generator (RF power supply 130, 130a to 130d) configured to generate an electromagnetic wave for plasma excitation to be supplied into the processing vessel, an electromagnetic wave supply unit (antennas 56, 56a to 56i, 57, 57a to 57d) configured to supply the electromagnetic wave into the processing vessel via the first dielectric, and a resonator array structure (resonator array structures 100, 100a to 100f, 300, 300a to 300f, 400, 400a to 400c, 500, 500a, 500b) located in a region in the processing vessel where the electromagnetic wave can be supplied via the first dielectric. The resonator array structure is configured to include a plurality of resonators (resonators 101, 101A, 101B, 301, 301B, 301C, 401, 402, 501-503) that can resonate with the magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged on the same plane. The electromagnetic wave supply unit supplies a magnetic field component perpendicular to the plane on which the plurality of resonators are arranged. As a result, high density plasma can be achieved even in a so-called batch type plasma processing apparatus.

[0140] Furthermore, according to the first and second embodiments, the resonator array structure (resonator array structure 100, 300) is provided in a plasma generation chamber (plasma generating section 48) defined by a plasma partition wall 54 provided along the longitudinal direction of the processing vessel. As a result, high density plasma can be achieved even in so-called remote plasma.

[0141] Furthermore, according to the first and second embodiments, the sidewall of the processing vessel is made of the first dielectric material, and the resonator array structure (the resonator array structures 100a-100c, 300a, 300b) is provided between the sidewall of the processing vessel and the substrate holder (the wafer boat 20). As a result, a higher plasma density can be achieved.

[0142] Furthermore, according to the first and fourth embodiments, the multiple resonators 101, 501 are arranged on a plane parallel to the longitudinal surface of the resonator array (resonator array 100, 100a to 100c, 500, 500a, 500b), thereby simplifying the structure of the resonator array.

[0143] Moreover, according to the first and second embodiments, the multiple resonators (resonators 101, 301B) have a structure in which C-shaped ring members (ring members 111, 311B) made of a conductor are laminated on both sides of a dielectric plate (dielectric 112, dielectric plate 312B). The C-shaped ring members are covered with a second dielectric (thicknesses 109a, 109b of dielectric 112, coating 313), and the thickness of the second dielectric on the substrate holding part side is thinner than the thickness of the electromagnetic wave supply part side. As a result, plasma can be selectively generated on the substrate holding part side.

[0144] Furthermore, according to the second and third embodiments, the multiple resonators (resonators 301, 301B, 301C, 401, 402) are arranged on a plane perpendicular to the longitudinal plane of the resonator array structure (resonator array structures 300, 300a-300f, 400, 400a-400c). As a result, the cell CS can be formed, and high density plasma can be realized.

[0145] According to the second and third embodiments, the resonator array structure has a plurality of cells CS surrounded by a plurality of resonators, and the cells CS are arranged in a lattice pattern, so that plasma can be generated inside the cells CS.

[0146] According to each embodiment, the electromagnetic wave supply unit is a coil provided outside the processing vessel, so that electromagnetic waves can be supplied to each resonator of the resonator array structure by non-contact power supply from outside the processing vessel.

[0147] According to each embodiment, the coil is arranged such that the opening of the coil is parallel to the plurality of resonators, so that electromagnetic waves can be supplied to each resonator of the resonator array structure from outside the processing vessel by non-contact power supply.

[0148] Furthermore, according to the first embodiment, the multiple resonators are arranged in a lattice pattern on a plane parallel to the longitudinal surface of the resonator array structure. Furthermore, multiple coils (coils 57-1 to 57-n) are provided at positions corresponding to the multiple resonators arranged in the region of the resonator array structure corresponding to each substrate W of the substrate holding part. As a result, the plasma density (processing speed) between the multiple substrates W can be arbitrarily controlled.

[0149] According to the second embodiment, the resonators are arranged on a plane perpendicular to the longitudinal surface of the resonator array, and a plurality of cells CS are formed by being surrounded by the resonators, and the cells CS are arranged in a lattice pattern. A plurality of coils (coils 57a-1 to 57a-n) are provided at positions corresponding to the cells CS arranged in the region of the resonator array corresponding to each substrate W of the substrate holder. As a result, the plasma density (processing speed) between the substrates W can be arbitrarily controlled.

[0150] Furthermore, according to the second embodiment, the coils (coils 57b-1 to 57b-n) are arranged in a staggered manner for each region of the resonator array structure, so that the plasma density (processing speed) between the plurality of substrates W can be controlled as desired.

[0151] Furthermore, according to the second embodiment, the resonators have different resonant frequencies for each region, which makes it possible to arbitrarily control the plasma density (processing speed) between the substrates W.

[0152] Furthermore, according to the third and fourth embodiments, the resonator array structures (resonator array structures 400, 400a to 400c, 500, 500a, 500b) are provided on a plane parallel to the substrate W. As a result, high density plasma can be achieved even in a so-called direct plasma type plasma processing apparatus.

[0153] Furthermore, according to the third and fourth embodiments, a resonator array structure is provided for each of the plurality of substrates W. As a result, it is possible to realize high density plasma.

[0154] Furthermore, according to the third embodiment, the multiple resonators are arranged on a plane perpendicular to the longitudinal plane of the resonator array structure, thereby forming the cell CS and achieving high plasma density.

[0155] According to the third embodiment, the resonator array structure has a plurality of cells CS surrounded by a plurality of resonators, and the cells CS are arranged in a lattice pattern, so that plasma can be generated inside the cells CS.

[0156] Furthermore, according to the fourth embodiment, the multiple resonators are arranged in a lattice pattern on a plane parallel to the longitudinal surface of the resonator array, thereby simplifying the structure of the resonator array.

[0157] Moreover, according to the fourth embodiment, the multiple resonators have a structure in which C-shaped ring members 511 made of a conductor are laminated on both sides of a dielectric plate. Moreover, the C-shaped ring member 511 is covered with a second dielectric, and the thickness of the second dielectric on the side of the surface to be processed (first surface 506) of the substrate W is thinner than the thickness of the other surface (second surface 507). As a result, plasma can be selectively generated on the side of the surface to be processed of the substrate W.

[0158] Furthermore, according to the third embodiment, the electromagnetic wave supply unit is a coil (coils 57c-1 to 57c-n, 57d-1 to 57d-n) provided outside the processing vessel. Moreover, a coil is provided for each resonator array structure corresponding to each substrate W of the substrate holder. As a result, the plasma density (processing speed) between the substrates W can be arbitrarily controlled.

[0159] According to the fourth embodiment, the electromagnetic wave supply unit is a coil (antennas 56h, 56i) provided outside the processing vessel. The coil is arranged such that an opening of the coil is parallel to the multiple resonators (resonators 501 to 503), and supplies a magnetic field component in a direction in which the magnetic field penetrates the multiple resonator array structures (resonator array structures 500, 500a, 500b). As a result, even if a flat resonator array structure is arranged for each substrate W, plasma can be generated in each resonator array structure, and the plasma density (processing speed) between the multiple substrates W can be arbitrarily controlled.

[0160] Furthermore, according to the third and fourth embodiments, the resonators have different resonant frequencies for each resonator array structure, which makes it possible to arbitrarily control the plasma density (processing speed) between the substrates W.

[0161] Furthermore, according to the third and fourth embodiments, the resonator array structure has different resonant frequencies for the multiple resonators corresponding to the center portion of the substrate W and the multiple resonators corresponding to the outer periphery of the substrate W. As a result, it is possible to control the plasma density (control the processing speed) between the center portion and the outer periphery of the substrate W.

[0162] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0163] In the above embodiments, the cell-type resonator array structure 300 and the like have been described by arranging a plurality of resonators 301 and the like, which are capable of resonating with the magnetic field component of an electromagnetic wave and have a size smaller than the wavelength of the electromagnetic wave, in a lattice pattern on the base plate 320 and the like. The arrangement of the plurality of resonators 301 and the like may be any arrangement in a direction along the plane of the base plate 320. For example, the plurality of resonators 301 and the like may be arranged at predetermined intervals along one direction. In addition, when the cell-type resonator array structure 400 and the like are arranged to face the substrate W, the plurality of resonators 401 and the like may be arranged radially from the center.

[0164] In addition, in each of the above embodiments, an inductively coupled coil is used as an antenna for injecting electromagnetic waves, but the present invention is not limited to this as long as it can generate a magnetic field in a direction penetrating the ring member 111 of the multiple resonators 101 of the resonator array structure 100. The antenna for injecting such electromagnetic waves is not limited to an inductively coupled coil, and any antenna or mechanism for injecting electromagnetic waves, such as a slot antenna, a monopole antenna, a capacitively coupled electrode, or a magnetron, can be used.

[0165] In addition, the above-described embodiments and modifications can be appropriately combined within a range that does not cause a contradiction in content. For example, the plasma processing apparatus 1 using so-called remote plasma of the first embodiment may be combined with the plasma processing apparatus 1b using so-called direct plasma of the third embodiment. In this case, the resonator array structure 100 and the resonator array structure 400 use resonators with different resonant frequencies, so that the plasma generation of each can be controlled.

[0166] The present disclosure can also be configured as follows. (1) A processing vessel at least partially made of a first dielectric material; a substrate holder configured to hold a plurality of substrates within the processing vessel; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied into the processing vessel; an electromagnetic wave supply unit configured to supply the electromagnetic wave into the processing vessel through the first dielectric; a resonator array structure located in a region within the processing vessel to which the electromagnetic wave can be supplied via the first dielectric; Equipped with the resonator array structure is configured to include a plurality of resonators that are capable of resonating with a magnetic field component of the electromagnetic wave, have a size smaller than a wavelength of the electromagnetic wave, and are arranged in the same plane; the electromagnetic wave supplying unit supplies a magnetic field component perpendicular to the plane on which the plurality of resonators are arranged. Plasma processing equipment. (2) the resonator array structure is provided in a plasma generation chamber partitioned by a plasma partition wall provided along a longitudinal direction of the processing vessel; The plasma processing apparatus according to (1) above. (3) the processing vessel has a sidewall made of the first dielectric material; the resonator array structure is provided between the sidewall of the processing vessel and the substrate holder; The plasma processing apparatus according to (1) above. (4) the plurality of resonators are arranged on the plane parallel to a longitudinal surface of the resonator array structure; The plasma processing apparatus according to any one of (1) to (3) above. (5) The plurality of resonators each have a structure in which C-shaped ring members made of a conductor are laminated on both sides of a dielectric plate, the C-shaped ring member is covered with a second dielectric material; the second dielectric has a thickness on the substrate holding part side that is thinner than a thickness on the electromagnetic wave supply part side; The plasma processing apparatus according to (4) above. (6) the plurality of resonators are arranged on the plane perpendicular to a longitudinal surface of the resonator array structure; The plasma processing apparatus according to any one of (1) to (3) above. (7) The resonator array structure includes a plurality of cells each surrounded by the plurality of resonators, The cells are arranged in a grid. The plasma processing apparatus according to (6) above. (8) The electromagnetic wave supply unit is a coil provided outside the processing vessel. The plasma processing apparatus according to any one of (1) to (7) above. (9) The coil is arranged such that an opening of the coil is parallel to the plurality of resonators. The plasma processing apparatus according to (8) above. (10) the plurality of resonators are arranged in a lattice pattern on the plane parallel to a longitudinal surface of the resonator array structure, a plurality of the coils are provided at positions corresponding to the plurality of resonators arranged in a region of the resonator array structure corresponding to each of the substrates of the substrate holding part; The plasma processing apparatus according to (9) above. (11) the plurality of resonators are arranged on the plane perpendicular to a longitudinal surface of the resonator array structure, and a plurality of cells are formed each surrounded by the plurality of resonators; The cells are arranged in a lattice pattern, a plurality of the coils are provided at positions corresponding to the cells arranged in a region of the resonator array structure corresponding to each of the substrates of the substrate holding part; The plasma processing apparatus according to (9) above. (12) The coils are arranged in a staggered manner for each of the regions of the resonator array structure. The plasma processing apparatus according to (11) above. (13) The plurality of resonators have different resonant frequencies for each of the regions. The plasma processing apparatus according to any one of (10) to (12) above. (14) The resonator array structure is provided in a plane parallel to the substrate. The plasma processing apparatus according to (1) above. (15) The resonator array structure is provided for each of the plurality of substrates. The plasma processing apparatus according to (14) above. (16) the plurality of resonators are arranged on the plane perpendicular to a longitudinal surface of the resonator array structure; The plasma processing apparatus according to (15) above. (17) The resonator array structure includes a plurality of cells each surrounded by the plurality of resonators, The cells are arranged in a grid. The plasma processing apparatus according to (16) above. (18) the plurality of resonators are arranged in a lattice pattern on the plane parallel to a longitudinal surface of the resonator array structure; The plasma processing apparatus according to (15) above. (19) The plurality of resonators each have a structure in which C-shaped ring members made of a conductor are laminated on both sides of a dielectric plate, the C-shaped ring member is covered with a second dielectric material; The second dielectric has a thickness on a surface to be processed of the substrate that is smaller than a thickness on the other surface of the substrate. The plasma processing apparatus according to (18) above. (20) the electromagnetic wave supply unit is a coil provided outside the processing vessel, The coil is provided for each of the resonator array structures corresponding to each of the substrates of the substrate holding part, The plasma processing apparatus according to (16) or (17). (twenty one) the electromagnetic wave supply unit is a coil provided outside the processing vessel, the coil is arranged such that an opening of the coil is parallel to the plurality of resonators, and supplies the magnetic field component in a direction in which the magnetic field penetrates the plurality of resonator array structures; The plasma processing apparatus according to (18) or (19). (twenty two) The plurality of resonators have different resonant frequencies for each of the resonator array structures. The plasma processing apparatus according to any one of (16) to (21) above. (twenty three) the resonator array structure has a resonant frequency different between the plurality of resonators corresponding to a central portion of the substrate and the plurality of resonators corresponding to an outer periphery of the substrate; The plasma processing apparatus according to any one of (16) to (21) above. [Explanation of symbols]

[0167] 1, 1a to 1d Plasma processing apparatus 10, 10a to 10d Device body 11 Control device 12, 12a Processing vessel 20,20B Wafer boat 38,40 Gas supply section 48 Plasma generating unit 54 Plasma Compartment Wall 56, 56a~56i, 57, 57a~57d Antenna 57-1~57-n,57a-1~57a-n,57b-1~57b-n,57c-1~57c-n,57d-1~57d-n Coil 100, 100a~100f, 300, 300a~300f, 400, 400a~400c, 500, 500a, 500b Resonator array structure 101,101A,101B,301,301B,301C,401,402,501~503 Resonator 109a, 109b Thickness 111,311B,511 Ring member 112 Dielectrics 130,130a~130d RF power supply 312B Dielectric plate 313 Coating 506 1st page 507 2nd page CS Cell H magnetic field SL Slot W substrate

Claims

1. a processing vessel at least partially made of a first dielectric material; a substrate holder configured to hold a plurality of substrates within the processing vessel; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied into the processing vessel; an electromagnetic wave supply unit configured to supply the electromagnetic wave into the processing vessel through the first dielectric; a resonator array structure located in a region within the processing vessel to which the electromagnetic wave can be supplied via the first dielectric; Equipped with the resonator array structure is configured to include a plurality of resonators that are capable of resonating with a magnetic field component of the electromagnetic wave, have a size smaller than a wavelength of the electromagnetic wave, and are arranged in the same plane; the electromagnetic wave supplying unit supplies a magnetic field component perpendicular to the plane on which the plurality of resonators are arranged. Plasma processing equipment.

2. the resonator array structure is provided in a plasma generation chamber partitioned by a plasma partition wall provided along a longitudinal direction of the processing vessel; The plasma processing apparatus according to claim 1 .

3. the processing vessel has a sidewall made of the first dielectric material; the resonator array structure is provided between the sidewall of the processing vessel and the substrate holder; The plasma processing apparatus according to claim 1 .

4. the plurality of resonators are arranged on the plane parallel to a longitudinal surface of the resonator array structure; 4. The plasma processing apparatus according to claim 1,

5. The plurality of resonators each have a structure in which C-shaped ring members made of a conductor are laminated on both sides of a dielectric plate, the C-shaped ring member is covered with a second dielectric material; the second dielectric has a thickness on the substrate holding part side that is thinner than a thickness on the electromagnetic wave supply part side; The plasma processing apparatus according to claim 4 .

6. the plurality of resonators are arranged on the plane perpendicular to a longitudinal surface of the resonator array structure; 4. The plasma processing apparatus according to claim 1,

7. The resonator array structure includes a plurality of cells each surrounded by the plurality of resonators, The cells are arranged in a grid. The plasma processing apparatus according to claim 6 .

8. The electromagnetic wave supply unit is a coil provided outside the processing vessel. The plasma processing apparatus according to claim 1 .

9. The coil is arranged such that an opening of the coil is parallel to the plurality of resonators. The plasma processing apparatus according to claim 8 .

10. the plurality of resonators are arranged in a lattice pattern on the plane parallel to a longitudinal surface of the resonator array structure, a plurality of the coils are provided at positions corresponding to the plurality of resonators arranged in a region of the resonator array structure corresponding to each of the substrates of the substrate holding part; The plasma processing apparatus according to claim 9 .

11. the plurality of resonators are arranged on the plane perpendicular to a longitudinal surface of the resonator array structure, and a plurality of cells are formed each surrounded by the plurality of resonators; The cells are arranged in a lattice pattern, a plurality of the coils are provided at positions corresponding to the cells arranged in a region of the resonator array structure corresponding to each of the substrates of the substrate holding part; The plasma processing apparatus according to claim 9 .

12. The coils are arranged in a staggered manner for each of the regions of the resonator array structure. The plasma processing apparatus according to claim 11 .

13. The plurality of resonators have different resonant frequencies for each of the regions. The plasma processing apparatus according to any one of claims 10 to 12.

14. The resonator array structure is provided in a plane parallel to the substrate. The plasma processing apparatus according to claim 1 .

15. The resonator array structure is provided for each of the plurality of substrates. The plasma processing apparatus according to claim 14.

16. the plurality of resonators are arranged on the plane perpendicular to a longitudinal surface of the resonator array structure; The plasma processing apparatus according to claim 15 .

17. The resonator array structure includes a plurality of cells each surrounded by the plurality of resonators, The cells are arranged in a grid. The plasma processing apparatus according to claim 16 .

18. the plurality of resonators are arranged in a lattice pattern on the plane parallel to a longitudinal surface of the resonator array structure; The plasma processing apparatus according to claim 15 .

19. The plurality of resonators each have a structure in which C-shaped ring members made of a conductor are laminated on both sides of a dielectric plate, the C-shaped ring member is covered with a second dielectric material; the second dielectric has a thickness on a surface to be processed of the substrate that is thinner than a thickness on another surface of the substrate; The plasma processing apparatus according to claim 18.

20. the electromagnetic wave supply unit is a coil provided outside the processing vessel, The coil is provided for each of the resonator array structures corresponding to each of the substrates of the substrate holding part, 18. The plasma processing apparatus according to claim 16 or 17.

21. the electromagnetic wave supply unit is a coil provided outside the processing vessel, the coil is arranged such that an opening of the coil is parallel to the plurality of resonators, and supplies the magnetic field component in a direction in which the magnetic field penetrates the plurality of resonator array structures; 20. The plasma processing apparatus according to claim 18 or 19.

22. The plurality of resonators have different resonant frequencies for each of the resonator array structures.

19. The plasma processing apparatus according to claim 16 or 18.

23. the resonator array structure has a resonant frequency different between the plurality of resonators corresponding to a central portion of the substrate and the plurality of resonators corresponding to an outer periphery of the substrate; 19. The plasma processing apparatus according to claim 16 or 18.

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