Manufacturing method of light-emitting device

Abstract

To provide a manufacturing method of a light-emitting device, capable of improving a yield.SOLUTION: A manufacturing method of a light-emitting device, comprises the steps of: preparing a structure body including a substrate having a first surface and a second surface located at a position opposite to the first surface and a semiconductor structure body arranged on the first surface; forming cracks in the substrate; arranging a wavelength conversion member on the second surface of the substrate after the step of forming the cracks; forming a first modification region at a part that is overlapped with the cracks in a plan view in the wavelength conversion member; and breaking the structure body and the wavelength conversion member along the cracks and the first modification region.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] The embodiment relates to a method for manufacturing a light emitting device. [Background technology]

[0002] A technique has been known in the past in which a structure in which a semiconductor laminate, a substrate, and a wavelength conversion layer are laminated is formed, and then the structure is cut into individual pieces by sawing. In such a technique, it is desired to improve the accuracy of the cutting and thereby improve the yield. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2018-517305 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the embodiments is to provide a method for manufacturing a light emitting device that can improve yield. [Means for solving the problem]

[0005] A manufacturing method for a light emitting device according to an embodiment includes the steps of preparing a structure including a substrate having a first surface and a second surface opposite to the first surface, and a semiconductor structure arranged on the first surface, forming a crack in the substrate, and after the step of forming the crack, arranging a wavelength conversion member on the second surface of the substrate, forming a first modified region in a portion of the wavelength conversion member that overlaps with the crack in a planar view, and fracturing the structure and the wavelength conversion member along the crack and the first modified region. Effect of the Invention

[0006] According to the embodiment, it is possible to provide a method for manufacturing a light emitting device that can improve yield. [Brief description of the drawings]

[0007] [Figure 1] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Diagram 2] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Diagram 3] 2A to 2C are plan views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV shown in FIG. [Diagram 5] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 6] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 7] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 8] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 9] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 10] 1 is a cross-sectional view showing a light emitting device according to a first embodiment. [Figure 11] 1 is a side view showing a light emitting device according to a first embodiment. [Figure 12] 1 is a top view showing a light emitting device according to a first embodiment. [Figure 13] FIG. 2 is a bottom view showing the light emitting device according to the first embodiment. [Figure 14] 3A to 3C are cross-sectional views showing a method of using the light emitting device according to the first embodiment. [Figure 15] 5A to 5C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 16] 5A to 5C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 17] FIG. 4 is a side view showing a light emitting device according to a second embodiment. [Figure 18] 10A to 10C are cross-sectional views showing a method for manufacturing a light emitting device according to a third embodiment. [Figure 19] 10A to 10C are cross-sectional views showing a method for manufacturing a light emitting device according to a third embodiment. [Figure 20] 1 is an optical microscope photograph showing a second modified region of a substrate. [Figure 21] 4 is an optical microscope photograph showing a first modified region of a wavelength conversion member. [Figure 22] 22 is an SEM photograph showing region XXII in FIG. 21. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Each embodiment will be described below with reference to the drawings. The drawings are schematic or conceptual, and are appropriately emphasized or simplified. Furthermore, the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as the actual ones, and are not necessarily strictly consistent between the drawings. Furthermore, in this specification and each figure, elements similar to those described with respect to the previously mentioned figures are given the same reference numerals, and detailed explanations are omitted as appropriate. Furthermore, an end view showing only the cut surface may be used as a cross-sectional view.

[0009] <First embodiment> 1 and 2 are cross-sectional views showing a method for manufacturing a light emitting device according to this embodiment. FIG. 3 is a plan view showing a method for manufacturing the light emitting device according to this embodiment. FIG. 4 is a cross-sectional view taken along line IV-IV shown in FIG. 5 to 9 are cross-sectional views showing a method for manufacturing the light emitting device according to this embodiment. FIG. 10 is a cross-sectional view showing a light emitting device according to this embodiment. FIG. 11 is a side view showing the light emitting device according to this embodiment. FIG. 12 is a top view showing the light emitting device according to this embodiment. FIG. 13 is a bottom view showing the light emitting device according to this embodiment. FIG. 14 is a cross-sectional view showing a method of using the light emitting device according to this embodiment.

[0010] (Step of Preparing Structure 10) First, as shown in FIG. 1, a substrate 11 is prepared. The substrate 11 is, for example, a sapphire substrate. The substrate 11 has a first surface 11a. Next, a semiconductor structure 12 is formed on the first surface 11a of the substrate 11. The semiconductor structure 12 is formed, for example, by epitaxially growing the semiconductor structure 12 on the substrate 11 and then dividing the semiconductor structure 12. In the semiconductor structure 12, a p-type layer, an active layer, and an n-type layer are stacked. The composition of the semiconductor structure 12 is, for example, In. x Al y Ga 1-x-y It can be expressed by the chemical formula N(0≦x≦1, 0≦y≦1, x+y≦1).

[0011] A pair of electrodes 13 are disposed on the semiconductor structure 12. One of the pair of electrodes 13 is connected to the p-type layer of the semiconductor structure 12, and the other of the pair of electrodes 13 is connected to the n-type layer of the semiconductor structure 12. An insulating layer 14 is disposed on the first surface 11a of the substrate 11 so as to cover the semiconductor structure 12 and the pair of electrodes 13. The insulating layer 14 is formed of, for example, polyimide. The insulating layer 14 is in contact with the first surface 11a of the substrate 11 between the semiconductor structures 12.

[0012] 2, the substrate 11 is thinned from the side opposite to the first surface 11a. The substrate 11 is thinned by removing a part of the substrate 11 by, for example, grinding or polishing. When the substrate 11 is polished, it can be polished by, for example, chemical mechanical polishing (CMP).

[0013] This forms a second surface 11b on the substrate 11. The second surface 11b is located on the opposite side to the first surface 11a. In this manner, the structure 10 is prepared. The structure 10 may be prepared by manufacturing it using the method described above, by another method, or by receiving it from another person.

[0014] (Step of forming crack 11d in substrate 11) Next, as shown in FIG. 3 and FIG. 4, the substrate 11 of the structure 10 is irradiated with the second laser light 102 from the second surface 11b side. The second laser light 102 is focused so that the beam diameter is smallest in the substrate 11. The second laser light 102 is, for example, a pulsed laser light. In this case, the pulse width is, for example, 100 fs or more and 10 ps or less, and preferably 100 fs or more and less than 3 ps. The peak wavelength of the second laser light 102 is a peak wavelength that can be transmitted through the substrate 11, and is, for example, 350 nm or more and 1100 nm or less, and preferably 700 nm or more and less than 1100 nm. The spot diameter of the second laser light 102, i.e., the minimum beam diameter, is, for example, 1 μm or more and 10 μm or less, and preferably 1 μm or more and less than 5 μm.

[0015] By irradiating the second laser light 102, a second modified region 11c is formed in the substrate 11. For example, when the substrate 11 is a single crystal substrate, the second modified region 11c is a region having a lower crystallinity than the surrounding area. The second laser light 102 is irradiated in a dot pattern along dicing lines that are lattice-shaped in a plan view. It is preferable that two adjacent second modified regions 11c overlap each other.

[0016] By forming the second modified region 11c in the substrate 11, a crack 11d is formed from the second modified region 11c toward the first surface 11a and the second surface 11b. It is preferable that the crack 11d reach the first surface 11a and the second surface 11b, but it is not necessary that the crack 11d reach them.

[0017] (Step of arranging wavelength conversion member 16) 5, after the step of forming the cracks 11d, a wavelength conversion member 16 is disposed on the second surface 11b of the substrate 11. The wavelength conversion member 16 is, for example, a plate-shaped member made by sintering a phosphor. The phosphor is, for example, a cerium-activated yttrium aluminum garnet phosphor (YAG:Ce). The wavelength conversion member 16 has a sixth surface 16a on the side opposite to the substrate 11.

[0018] (Step of forming first modified region 16c in wavelength conversion member 16) Next, as shown in FIG. 6, the insulating layer 14 is removed. Next, as shown in FIG. 7, the first laser light 101 is irradiated from the sixth surface 16a to the area overlapping with the crack 11d in a plan view. The energy of the first laser light 101 is higher than the energy of the second laser light 102 described above. The first laser light 101 is focused so that the beam diameter is smallest in the wavelength conversion member 16. The first laser light 101 is, for example, a pulsed laser light. In this case, the pulse width is, for example, 100 fs or more and 10 ps or less, and preferably 3 ps or more and less than 10 ps. The peak wavelength of the first laser light 101 is, for example, 350 nm or more and 1100 nm or less, and preferably 700 nm or more and less than 1100 nm. The spot diameter of the first laser light 101, i.e., the minimum beam diameter, is, for example, 1 μm or more and 10 μm or less, and preferably 1 μm or more and less than 5 μm.

[0019] As a result, a first modified region 16c is formed in a portion of the wavelength conversion member 16 that overlaps with the crack 11d in a planar view. The first modified region 16c is, for example, a region in which the wavelength conversion member 16 has been altered and become brittle. The first modified region 16c is formed in a portion of the wavelength conversion member 16 on the substrate 11 side. The two-dot chain line shown in FIG. 7 is a center line 16L that connects the midpoints of the wavelength conversion member 16 in the thickness direction. In the example shown in FIG. 7, the first modified region 16c is formed between the center line 16L and the substrate 11. Note that, in the example shown in FIG. 7, the first modified region 16c is formed in only one place in the thickness direction of the wavelength conversion member 16, but may be formed in two or more places.

[0020] (Step of forming recess 16e in wavelength conversion member 16) Next, as shown in Fig. 8, recesses 16e are formed in regions of sixth surface 16a of wavelength conversion member 16 that overlap with cracks 11d of substrate 11 in plan view. Recesses 16e are formed, for example, by removing parts of wavelength conversion member 16 along dicing lines with a blade. Thus, recesses 16e have a lattice shape in plan view. In the example shown in Fig. 8, recesses 16e are formed closer to sixth surface 16a than center line 16L of wavelength conversion member 16. In this case, the entire first modified region 16c remains even after recesses 16e are formed.

[0021] (Cutting process) 9, the structure 10 and the wavelength conversion member 16 are cut along the crack 11d of the substrate 11 and the first modified region 16c of the wavelength conversion member 16. For example, the vicinity of the recess 16e of the wavelength conversion member 16 is pressed toward the substrate 11. As a result, for example, a crack propagates starting from the crack 11d, and the structure 10 and the wavelength conversion member 16 are cut along the dicing line. In this manner, a plurality of light emitting devices 20 are manufactured.

[0022] (Light emitting device 20) The structure of the light emitting device 20 manufactured as described above will now be described. 10 to 13, the light emitting device 20 includes a substrate 11, a semiconductor structure 12, and a wavelength converting member 16. The light emitting device 20 may further include a pair of electrodes 13.

[0023] The substrate 11 has a first surface 11a, a second surface 11b, and a third surface 11f. The second surface 11b is located on the opposite side of the first surface 11a. The third surface 11f is located between the first surface 11a and the second surface 11b. For example, in a plan view, the substrate 11 has a rectangular shape, and there are four third surfaces 11f.

[0024] The semiconductor structure 12 is disposed on the first surface 11a of the substrate 11. The configuration of the semiconductor structure 12 is as described above. The pair of electrodes 13 are disposed on the surfaces of the semiconductor structure 12 opposite to the substrate 11. The wavelength converting member 16 is disposed on the second surface 11b of the substrate 11.

[0025] The wavelength conversion member 16 has a fourth surface 16f intersecting with the second surface 11b of the substrate 11, a fifth surface 16g located on the substrate 11 side, and a sixth surface 16a located on the opposite side of the fifth surface 16g. In a plan view, the outer edge of the sixth surface 16a is located inside the outer edge of the fifth surface 16g. The fourth surface 16f has a first region 16f1 in contact with the fifth surface 16g and a second region 16f2 in contact with the sixth surface 16a. The first region 16f1 is generally flat. The second region 16f2 is curved or bent in a concave shape. The second region 16f2 is a region that was the inner surface of the recess 16e. A convex ridge exists at the boundary between the first region 16f1 and the second region 16f2.

[0026] A first modified region 16c is present in at least a part of the fourth surface 16f of the wavelength conversion member 16, for example, the first region 16f1. The surface roughness Ra of the first modified region 16c is smaller than the surface roughness Ra of the region of the fourth surface 16f other than the first modified region 16c. That is, the first modified region 16c is smoother than the surrounding area.

[0027] A second modified region 11c is present in at least a portion of the third surface 11f of the substrate 11. The surface roughness Ra of the second modified region 11c is greater than the surface roughness Ra of the region of the third surface 11f other than the second modified region 11c, i.e., the surface roughness Ra of the region formed by the cracks 11d.

[0028] (Method of using the light emitting device 20) As shown in Fig. 14, the light emitting device 20 may be used in a state where it is joined to a wiring board 30 and covered with a resin member 40. In the wiring board 30, wiring (not shown) is formed in an insulating base. A terminal 31 is disposed on the upper surface of the wiring board 30. A plurality of light emitting devices 20 are disposed on the wiring board 30. The terminal 31 of the wiring board 30 is joined to the electrode 13 of the light emitting device 20 via a bonding member 35. The bonding member 35 is, for example, a gold bump.

[0029] In addition, a resin member 40 is disposed on the wiring board 30. The resin member 40 covers a portion of the light emitting device 20 except for the sixth surface 16a of the wavelength conversion member 16. The sixth surface 16a of the wavelength conversion member 16 functions as a light emission surface of the light emitting device 20.

[0030] (effect) According to this embodiment, in the step shown in Figures 3 and 4, a crack 11d is formed in the substrate 11, in the step shown in Figure 7, a first modified region 16c is formed in the wavelength conversion member 16, and in the step shown in Figure 9, the structure 10 and the wavelength conversion member 16 are cleaved along the crack 11d and the first modified region 16c. This makes it possible to prevent the cleavage surface from progressing in an unintended direction in the substrate 11 and the wavelength conversion member 16. As a result, the accuracy of the cleavage is improved, and the yield of the light emitting device 20 is improved.

[0031] According to this embodiment, in the step shown in Fig. 8, a recess 16e is formed in the wavelength conversion member 16. This further improves the accuracy of the cleavage. Furthermore, by forming the recess 16e, as shown in Figs. 10 to 13, the sixth surface 16a, which is the light emission surface, becomes smaller than the fifth surface 16g in the light emitting device 20 after manufacture. As a result, in the light emitting device 20, light that is emitted from the active layer of the substrate 11 and reaches the second region 16f2 of the fourth surface 16f of the wavelength conversion member 16 is reflected toward the sixth surface 16a. This improves the light extraction efficiency in the light emitting device 20.

[0032] Furthermore, according to this embodiment, the first modified region 16c is formed in the first region 16f1 on the fourth surface 16f facing the substrate 11, so that the first modified region 16c can remain even after the recess 16e is formed. As a result, the accuracy of the cleavage can be reliably improved.

[0033] Furthermore, according to the present embodiment, before forming the recesses 16e in the wavelength conversion member 16, the first modified region 16c is formed by irradiating the wavelength conversion member 16 with the first laser beam 101 from the sixth surface 16a side. This makes it possible to prevent the first laser beam 101 from being scattered by the recesses 16e and to form the first modified region 16c with high accuracy.

[0034] Furthermore, according to the present embodiment, the second modified region 11c is formed by irradiating the substrate 11 with the second laser light 102, thereby forming the crack 11d in the substrate 11. This makes it possible to form the crack 11d accurately and efficiently.

[0035] <Second embodiment> 15 and 16 are cross-sectional views showing a method for manufacturing a light emitting device according to this embodiment. FIG. 17 is a side view showing the light emitting device according to this embodiment. This embodiment is different from the first embodiment in the range in which the first modified region 16c is formed.

[0036] First, the steps shown in Figs. 1 to 6 are carried out. 15, a region overlapping with crack 11d in a plan view is irradiated with first laser light 101. As a result, first modified region 16c is formed in wavelength conversion member 16. At this time, first modified region 16c is formed from fifth surface 16g in wavelength conversion member 16 that contacts substrate 11, beyond center line 16L, to near sixth surface 16a.

[0037] Next, as shown in Fig. 16, a recess 16e is formed in a region overlapping with the crack 11d of the substrate 11 in a plan view. In the example shown in Fig. 16, by forming the recess 16e, a part of the first modified region 16c is removed, and a remnant portion remains. For example, the recess 16e is formed up to the substrate 11 side of the center line 16L of the wavelength conversion member 16. As a result, after the step of forming the recess 16e and before the step of fracturing the substrate 11 and the wavelength conversion member 16, the first modified region 16c exists over the entire length from the bottom surface of the recess 16e to the fifth surface 16g of the wavelength conversion member 16 on the substrate 11 side.

[0038] Next, the process shown in Fig. 9 is carried out. In this manner, the light emitting device 21 according to this embodiment is manufactured. As shown in FIG. 17, in a light emitting device 21 according to this embodiment, a first modified region 16c is formed over the entire first region 16f1 of a fourth surface 16f of a wavelength conversion member 16.

[0039] According to this embodiment, the wavelength conversion member 16 and the substrate 11 are cut in a state in which the first modified region 16c exists over the entire length from the bottom surface of the recess 16e to the fifth surface 16g in the wavelength conversion member 16, so that the accuracy of the cutting is further improved. The manufacturing method, configuration, and effects of this embodiment other than those described above are the same as those of the first embodiment.

[0040] <Third embodiment> 18 and 19 are cross-sectional views showing a method for manufacturing a light emitting device according to this embodiment. This embodiment is different from the first embodiment in that the first modified region 16c is formed after the recess 16e is formed.

[0041] First, the steps shown in Figs. 1 to 6 are carried out. 18, a recess 16e is formed in the sixth surface 16a of the wavelength conversion member 16. The recess 16e is formed in a region that overlaps with the crack 11d of the substrate 11 in plan view.

[0042] 19, the bottom of the recess 16e is irradiated with the first laser beam 101. At this time, the focusing conditions of the first laser beam 101 are adjusted so that the first laser beam 101 is not scattered by the recess 16e. As a result, the first modified region 16c is formed at a position overlapping the recess 16e in a plan view.

[0043] Next, the process shown in Fig. 9 is carried out. Other than the above, the manufacturing method, configuration, and effects of this embodiment are the same as those of the first embodiment.

[0044] <Test Example> In this test example, the observation results of the second modified region 11c of the substrate 11 and the observation results of the first modified region 16c of the wavelength conversion member 16 in the light emitting device 20 after manufacture will be described. FIG. 20 is an optical microscope photograph showing a second modified region of the substrate. FIG. 21 is an optical microscope photograph showing the first modified region of the wavelength conversion member. FIG. 22 is an SEM photograph showing region XXII in FIG.

[0045] As shown in FIG. 20, in the second modified region 11c of the substrate 11, the impact marks caused by the second laser beam 102 are formed in the form of dots. As shown in Fig. 21, the first modified region 16c of the wavelength conversion member 16 has a different color from the other regions. Note that Fig. 21 shows an example in which the first modified region 16c is formed in two places in the thickness direction of the wavelength conversion member 16. Furthermore, as shown in FIG. 22, the first modified region 16c has a rough surface texture compared to the other regions.

[0046] The above-described embodiments are examples of the present invention, and the present invention is not limited to these embodiments. For example, the present invention also includes the above-described embodiments in which some components or steps are added, deleted, or changed. In addition, the above-described embodiments can be implemented in combination with each other.

[0047] The present invention includes the following aspects.

[0048] (Appendix 1) providing a structure including a substrate having a first side and a second side opposite the first side, and a semiconductor structure disposed on the first side; forming a crack in the substrate; After the step of forming the cracks, a step of disposing a wavelength conversion member on the second surface of the substrate; forming a first modified region in a portion of the wavelength conversion member that overlaps with the crack in a plan view; fracturing the structure and the wavelength conversion member along the crack and the first modified region; A method for manufacturing a light emitting device comprising the steps of:

[0049] (Appendix 2) 2. The method for manufacturing a light emitting device according to claim 1, further comprising the step of forming a recess in an area overlapping with the crack in a planar view on the surface of the wavelength conversion member opposite the substrate.

[0050] (Appendix 3) A method for manufacturing a light emitting device as described in Appendix 2, wherein the step of forming the recess is carried out after the step of forming the first modified region and before the step of breaking, so that at least a portion of the first modified region remains.

[0051] (Appendix 4) 4. The method for manufacturing a light emitting device according to claim 3, wherein in the step of forming the first modified region, the first modified region is formed in a portion of the wavelength conversion member on the substrate side.

[0052] (Appendix 5) A method for manufacturing a light emitting device as described in Appendix 3 or 4, wherein after the step of forming the recess and before the step of breaking, the first modified region exists over the entire length from the bottom surface of the recess to the substrate side surface of the wavelength conversion member.

[0053] (Appendix 6) the step of forming the recess is performed after the step of disposing the wavelength conversion member and before the step of forming the first modified region, 6. The method for manufacturing a light emitting device according to claim 2, wherein the first modified region is formed at a position overlapping with the recess in a plan view.

[0054] (Appendix 7) 7. The method for manufacturing a light emitting device according to claim 1, wherein the step of forming the first modified region includes a step of irradiating the wavelength conversion member with a first laser light.

[0055] (Appendix 8) A method for manufacturing a light emitting device described in any one of Appendices 1 to 7, wherein the step of forming the crack includes a step of forming a second modified region in the substrate by irradiating the substrate with a second laser light.

[0056] (Appendix 9) the step of forming the first modified region includes a step of irradiating the wavelength conversion member with a first laser light, the step of forming the crack includes a step of forming a second modified region in the substrate by irradiating the substrate with a second laser light; 7. The method for manufacturing a light emitting device according to claim 1, wherein the energy of the first laser light is higher than the energy of the second laser light.

[0057] (Appendix 10) The step of preparing the structure includes: forming the semiconductor structure on the first surface of the substrate; thinning the substrate from an opposite side to the first side to form the second side; 10. A method for producing a light emitting device according to any one of claims 1 to 9, comprising:

[0058] (Appendix 11) a substrate having a first surface, a second surface opposite to the first surface, and a third surface between the first surface and the second surface; a semiconductor structure disposed on the first surface; a wavelength converting member disposed on the second surface and having a fourth surface intersecting the second surface; Equipped with A light emitting device, wherein a first modified region exists on at least a part of the fourth surface, and a second modified region exists on at least a part of the third surface.

[0059] (Appendix 12) the wavelength conversion member further has a fifth surface located on the substrate side and a sixth surface located opposite the fifth surface, In a plan view, the sixth surface is located inside the fifth surface, 12. The light emitting device of claim 11, wherein the first modified region is present in a first region of the fourth surface that contacts the fifth surface, and is not present in a second region of the fourth surface that contacts the sixth surface. [Explanation of symbols]

[0060] 10 Structure 11 Substrate 11a 1st page 11b Side 2 11c Second modification area 11d Crack 12 Semiconductor structure 13 electrodes 14 Insulating layer 16 Wavelength conversion material 16a Page 6 16c First modified area 16e Recess 16f 4th side 16f1 1st area 16f2 2nd area 16g 5th side 16L center line 20, 21 Light-emitting device 30 Wiring board 31 Terminal 35 Joint materials 40 Resin parts

Claims

1. providing a structure including a substrate having a first side and a second side opposite the first side, and a semiconductor structure disposed on the first side; forming a crack in the substrate; After the step of forming the cracks, a step of disposing a wavelength conversion member on the second surface of the substrate; forming a first modified region in a portion of the wavelength conversion member that overlaps with the crack in a plan view; Fracturing the structure and the wavelength conversion member along the crack and the first modified region; A method for manufacturing a light emitting device comprising the steps of:

2. The method for manufacturing a light emitting device according to claim 1 , further comprising the step of forming a recess in a region overlapping with the crack in a plan view on a surface of the wavelength conversion member opposite to the substrate.

3. The method for manufacturing a light emitting device according to claim 2 , wherein the step of forming the recess is performed after the step of forming the first modified region and before the step of breaking, so that at least a part of the first modified region remains.

4. The method for manufacturing a light emitting device according to claim 3 , wherein in the step of forming the first modified region, the first modified region is formed in a portion of the wavelength conversion member facing the substrate.

5. The method for manufacturing a light emitting device according to claim 3 , wherein after the step of forming the recess and before the step of breaking, the first modified region exists over the entire length from the bottom surface of the recess to the surface of the wavelength conversion member facing the substrate.

6. the step of forming the recess is performed after the step of disposing the wavelength conversion member and before the step of forming the first modified region, The method for manufacturing a light emitting device according to claim 2 , wherein the first modified region is formed at a position overlapping the recess in a plan view.

7. The method for manufacturing a light emitting device according to claim 1 , wherein the step of forming the first modified region comprises the step of irradiating the wavelength conversion member with a first laser light.

8. The method for manufacturing a light emitting device according to claim 1 , wherein the step of forming the crack comprises the step of forming a second modified region in the substrate by irradiating the substrate with a second laser light.

9. The step of forming the first modified region includes a step of irradiating the wavelength conversion member with a first laser light, The step of forming the crack includes a step of forming a second modified region in the substrate by irradiating the substrate with a second laser light, The method for manufacturing a light emitting device according to claim 1 , wherein the energy of the first laser light is higher than the energy of the second laser light.

10. The step of preparing the structure includes: forming the semiconductor structure on the first surface of the substrate; thinning the substrate from an opposite side to the first side to form the second side; The method for manufacturing a light emitting device according to claim 1 , comprising:

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