High-charge, low-potential charge carrier

Abstract

To reduce thrust required to convey a charged electrical charge carrier by reducing receding electrostatic force acting in the direction pushing back the electrical charge carrier when the electrical charge carrier is conveyed from a low-potential charging source to a high-potential recovery source, and to keep the potential of the electrical charge carrier low during conveyance.SOLUTION: A potential control layer 73 is provided near a charge retention layer 71 of an electrical charge carrier and the potential is set between that of a charge source and the charge retention layer, thereby reducing the electrostatic force applied to the electrical charge carrier and lowering the potential.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to a novel configuration of a charge carrier that can greatly reduce the thrust force for transporting the charge carrier from a low potential to a high potential in an electrostatic generator and can greatly increase the amount of charge that can be transported. [Background technology]

[0002] In order to solve global warming and environmental problems, various power generation methods that do not emit carbon dioxide have been implemented. Examples include nuclear power generation, solar power generation, and wind power generation. However, these methods have problems in terms of safety, stability, cost, durability, and compactness. On the other hand, electrostatic generators are not dangerous throughout their manufacture, use, and disposal, and are not affected by weather or the time of generation, so the amount of power generated is always stable. Furthermore, they are easy to miniaturize, so no storage batteries or transmission lines are required, making them a low-cost power source.

[0003] In this type of electrostatic generator, a charge is injected into a charge carrier by a low-potential charge charging electrode (hereafter referred to as the charging electrode), and the charge carrier is transported and raised against the electrostatic force acting on it in an electric field to a high-potential charge recovery electrode (hereafter referred to as the recovery electrode), where the transported charge is recovered. The most well-known and widely used electrostatic generator today is the Van de Graaff type electrostatic generator. Its configuration is shown in Figure 1. At its lowest point, the insulating belt 6, which serves as a charge carrier, is positively charged by the corona discharge electrode 2 to which a high potential is applied by the high-voltage power supply 1. The insulating belt 6 is rotated clockwise by an electric motor (not shown), and the positively charged portion enters the upper high-voltage electrode 4. There, a corona discharge occurs between the insulating belt 6 and the positive charge removing discharge electrode 3, and the carried positive charge is collected by the high-voltage electrode 4. The potential of the high-voltage electrode is, for example, 1 million volts, which is much higher than the potential of the charge charged to the insulating belt 6 at the bottom, so electricity is generated. The output is the product of the potential difference (1 million volts) and the amount of charge carried. Although the potential difference is very large, the amount of charge carried is very small, and the output is smaller than the energy consumed by the electric motor. Therefore, when viewed from the perspective of the entire system, this is a high-voltage generator but cannot be called a generator. It is possible to increase the amount of charge transported by increasing the corona discharge voltage at the lowest point, but if the potential of the charge increases during transport and the strength of the electric field around it exceeds the corona discharge initiation field, a corona discharge will occur at that point and the charge will disappear during transport, so the amount of charge transported cannot be increased. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2020-150780 A [Non-patent literature]

[0005] [Non-Patent Document 1] Static Electricity Handbook, Electrostatic Society of Japan, 1998 Edition, p.962 Summary of the Invention [Problem to be solved by the invention]

[0006] The problem to be solved by the present invention is to reduce the thrust force required to transport the charge carrier by weakening the strong receding electrostatic force acting on the charged charge carrier in an electrostatic generator in which a charge carrier is charged by a charging source and then transported to a recovery source where the charge is recovered, and to increase the amount of charge that can be transported by weakening the potential of the charge carrier during transportation. [Means for solving the problem]

[0007] The problem to be solved by the invention is achieved by providing a potential control layer in the vicinity of the charge carrier and grounding the layer. Effect of the Invention

[0008] By providing a potential control layer near the charged charge carrier and grounding it, a charge of the opposite polarity to the charge of the charge carrier is electrostatically induced therein, blocking the electrostatic force generated between the charge carrier and the charging source or recovery source, thereby reducing the electrostatic force acting on the charged charge carrier and decreasing its thrust. Also, by providing a grounded potential control layer, the potential of the charge carrier during transportation can be kept low, greatly increasing the amount of charge that can be transported. As a result, electrostatic generators, which could not be used as a power source until now, can now be used, and they can be used as renewable energy to help solve environmental problems. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic diagram illustrating a Van de Graaff type electrostatic generator. [Diagram 2] FIG. 2 is a schematic diagram illustrating an electrostatic generator of a simple configuration based on the same principle as the Van de Graaff generator. [Diagram 3] FIG. 3 is a schematic diagram showing the direction and approximate magnitude of the electrostatic force acting on the charge carrier. [Figure 4] FIG. 4 is a graph showing the electrostatic force experienced by the charged charge carrier as it moves from the charging electret to the recovery electrode. [Diagram 5]FIG. 5 is a graph showing the potential of the charge carrier as it moves from the charging electret to the recovery electrode. [Figure 6] FIG. 6 is a schematic front view showing the structure of the charge carrier of the present invention. [Figure 7] FIG. 7 is a graph showing the difference in electrostatic force acting on the charge carrier during transportation depending on whether or not there is a potential control layer. [Figure 8] FIG. 8 is a graph showing the difference in potential of the charge carrier during transportation depending on whether or not there is a potential control layer. [Figure 9] FIG. 9 is a graph showing the relationship between the distance between the charge retention layer and the potential control layer and the electrostatic force acting on the charge carrier. [Figure 10] FIG. 10 is a graph showing the relationship between the thickness of the potential control layer and the electrostatic force acting on the charge carrier. [Figure 11] FIG. 11 is a graph showing the relationship between the width of the potential control layer and the electrostatic force acting on the charge carrier. [Figure 12] FIG. 12 is a graph showing the relationship between the potential of the potential control layer and the electrostatic force acting on the charge carrier. [Figure 13] FIG. 13 is a graph showing the relationship between the thickness of a support including a charge storage layer and the electrostatic force acting on a charge carrier. [Figure 14] FIG. 14 is a graph showing the relationship between the thickness of the charge retention layer and the electrostatic force acting on the charge carrier. [Figure 15] FIG. 15 is a plan view of the charge carrier disk. [Figure 16] FIG. 16 is a plan view of the charge recovery disc. [Figure 17] Figure 17 is a bird's-eye view of a set of electrostatic generators consisting of two charge-collection discs sandwiching a charge-carrier disc. [Figure 18] FIG. 18 is an elevation view of a set of electrostatic generators stacked in multiple tiers.

[0010] In order to reduce the thrust of the charge carrier of the electrostatic generator, it is first necessary to know the electrostatic force acting on the charge carrier from low potential to high potential in the current electrostatic generator. Also, in order to lower the potential of the charge carrier during transportation, it is necessary to know the potential of the charge carrier during this period. Of course, there are air resistance and mechanical friction, but they are small compared to the electrostatic force and will be omitted. The electrostatic force and potential can be simulated by a two-dimensional finite difference method. However, since the shape of the Van de Graaff generator is complicated, a simulation was performed with a simpler configuration with the same physical content. The configuration of the electrostatic generator is shown in Figure 2. Also, since the simulation of corona discharge is very complicated, the charging was changed to electrostatic induction by electrets and the recovery was changed to a pseudo-Faraday cage.

[0011] In FIG. 2, reference number 6 is an insulating charge carrier substrate, which has the shape of a belt or disk. Reference number 7 is a charge carrier with upper and lower plate electrodes that are conductive (not shown), and is hereinafter referred to as a parallel plate type charge carrier due to its shape. Reference number 8 is a charging electret, which is negatively charged. Reference number 9 is a charge recovery electrode, which is wider than the charge carrier 7 to form a pseudo Faraday cage. Reference number 10 is a capacitor for storing the recovered charge. Reference number 11 is a charging terminal for charging the charge carrier 7 with a positive charge by electrostatic induction when the charge carrier 7 enters from the left and reaches the center of the charging electret 8 by grounding. Reference number 12 is a recovery terminal for recovering the positive charge carried by the Faraday cage effect by conducting with the recovery electrode when the charge carrier 7 enters deep into the recovery electrode.

[0012] In FIG. 2, the thickness of the support 6 is 1.9 mm, the relative dielectric constant is 2.0, the width of the charge carrier 7 is 5.0 mm, the thickness is 1.6 mm, the width of the charged electret 8 is 6.4 mm, the thickness is 0.8 mm, the relative dielectric constant is 2.0, and the surface charge density is +0.15 mC / m 2The above simulation was performed with the following settings: width of the recovery electrode 9 is 6.4 mm, potential is -10,000 V, gap between the charge carrier 7 and the charged electret 8 and the recovery electrode 9 is 0.4 mm, distance between the charged electret 8 and the recovery electrode 9 is 22.4 mm, depth between the charge carrier 7 and the charged electret 8 and the recovery electrode 9 is 30.0 mm. Note that the electret is usually at a negative potential, but for the convenience of the simulation, it was at a positive potential. The recovery potential of -10,000 V was set in consideration of the size of the device.

[0013] The charged electret 8 is a highly insulating resin with a thickness of 800 μm and a relative dielectric constant of 2.0, on which a positive charge of 0.15 mC / m 2 The charged electret 8 is charged with a charge density of 100 nC. Its surface potential is -338 V. When the charge carrier 7 is placed directly below the charged electret 8 from the left as shown in FIG. 2, and the charge terminal 11 grounds the charge carrier 7, a negative charge is injected into the charge carrier 7 due to the electrostatic induction phenomenon. In other words, the charge carrier 7 is charged. The amount of injected charge is calculated by simulation to be -8.90 nC when the gap between the charged electret 8 and the charge carrier 7 is 0.4 mm.

[0014] As a result, electrostatic forces 13 in the -X direction, 14 in the Y direction, and 15 in the +X direction act on the parallel-plate charge carrier 7 moving to the right in the figure between the charging electret 8 and the recovery electrode 9, as shown in Fig. 3. However, since the electrostatic force acting in the +Y direction on the upper plate electrode of the charge carrier 7 and the electrostatic force acting in the -Y direction on the lower plate electrode are equal in magnitude but opposite in direction, they cancel each other out, and ultimately the electrostatic force acting in the Y direction on the charge carrier 7 becomes zero.

[0015] The -X direction electrostatic force 13 is the sum of the electric field force (Coulomb force) generated by the electric field formed between the charged electret 8 and the recovery electrode 9, and the retreating image force generated between the charged electret 8 and the back electrode. The +X direction electrostatic force 15 is similarly the sum of the electric field force (Coulomb force) and the forward image force generated between the charged electret 8 and the recovery electrode 9. Therefore, the sum of the electrostatic forces 13 and 15 acting on the charged charge carrier 7 while the charged charge carrier 7 moves from the charging electret 8 to the recovery electrode 9, i.e., the electrostatic force in the X direction and the potential of the charge carrier 7 at that time, were simulated using a two-dimensional finite difference method.

[0016] The results, firstly the electrostatic force acting, are shown in FIG. The average electrostatic force that the charge carrier 7, charged to -8.9 nC, receives while moving from the charging electret 8 to the recovery electrode 9, is -4.08 mN. Meanwhile, the average electric field during this period is 461 kV / m, since the potential difference between the charging electret 8 and the recovery electrode 9 is 10,338 V and the distance is 22.4 mm. The charge on the charge carrier 7 is -8.90 nC, so the electrostatic force acting on it is -4.11 mN, as shown in the following equation. F=qE (1) F: Electrostatic force [N] q: Charge amount [C] E: Electric field strength [V / m] That is, immediately after the charged charge carrier 7 leaves the charged electret 8, it is subjected to a large receding image force between itself and the back electrode of the charged electret, and as it approaches the recovery electrode 9, it is subjected to a large forward image force between them. However, since the two forces are in opposite directions and have the same strength, they cancel each other out, and in the end, only the electric field force (Coulomb force) generated by the electric field between them acts effectively. Although electrostatic forces are also exerted within the charging electret 8 and the recovery electrode 9, they are offset to become almost zero because they are in the opposite directions.

[0017] Next, the results of simulating the potential of the charge carrier 7 during transport are shown in Figure 5. From Figure 5, it can be seen that when the charge carrier 7 charged to -8.9 nC is transported from the charging electret 8 to the recovery electrode 9, its potential exceeds -36000 V at the midpoint (10.5 mm from the charging electret 8). At this time, the electric field on the left and right walls of the charge carrier 7 exceeds 4,000,000 V / m. In other words, it exceeds 4,000 V / mm (= 4.0 kV / mm). Normally, it is said that corona discharge occurs when the potential exceeds 3.6 kV / m, so corona discharge occurs at this point and the charge dissipates during transport. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS EXAMPLES

[0018] A high-charge, low-charge potential carrier 7 was fabricated as shown in Fig. 6 by inserting a 0.1 mm thick potential control layer 73 0.1 mm away from the charge retention layer 71 between the 1.9 mm thick dielectric support layers 72 and 74 between the upper and lower charge retention layers 71, each 1.6 mm thick. Due to its shape, it is hereinafter called a four-layer charge carrier. The potential control layer 73 is grounded by a conductor. The four-layer charge carrier 7 was charged to -8.9 nC by electrostatic induction directly below the charging electret 8, and the electrostatic force and potential it received while moving from the charging electret 8 to the recovery electrode 9 were calculated by simulation. The results are shown in Figures 7 and 8, along with those without the potential control layer 73. 7, it can be seen that the effect of the potential control layer 73 is enormous, and all of the large receding electrostatic force that occurred without the potential control layer 73 is eliminated. As a result, even if the charge is applied, the thrust force that transports the charge carrier 7 from the charging electret 8 to the recovery electrode 9 becomes almost zero. Even with the potential control layer 73, the electrostatic force received when approaching the recovery electrode 9 is large at 14.7 mN, but this is because the potential of the recovery electrode 9 is high at -10,000 V. When the potential is 0 V, the electrostatic force is essentially zero at -0.02 mN.

[0019] The four-layer charge carrier 7 is charged just below the charging electret 8, and the simulation result of the potential when the charge carrier 7 moves from the charging electret 8 to the recovery electrode 9 is shown in FIG. 8 alongside the case where the potential control layer 73 is not provided. It can be seen from Fig. 8 that the potential control layer 71 has a tremendous effect in lowering the potential of the charge carrier 7 during transport. Without the potential control layer 71, the potential of the charge carrier 7 at a point 10.5 mm away from the charged electret 8 was -36254 V, but with the potential control layer 71, it dropped to -248 V, less than 1 / 100 of that. From this result, it is expected that with the potential control layer 71, the transported charge will not disappear due to corona discharge during transport even if the amount of transported charge is significantly increased. EXAMPLES

[0020] In Example 1, the thickness of the dielectric support 72 between the charge retention layer 71 and the potential control layer 73 was increased from 0.1 mm to 0.5 mm at intervals of 0.1 mm, without changing other conditions. When there was no potential control layer 73, the receding electrostatic force acting on the charge carrier 7 charged to -8.9 nC was the largest when the interval between the charged electret 8 and the charge carrier 7 was 0.9 mm. Therefore, the electrostatic force acting on the charge carrier 7 composed of the dielectric support 72 with the above-mentioned different thicknesses at this interval was obtained by simulation. The result is shown in FIG. 9. Note that the electrostatic forces acting on the dielectric support layer 72, the potential control layer 73, and the dielectric support layer 74 were obtained separately, but since the values ​​were small, they were collectively shown as the support. For the same reason, in the following examples, a simulation was performed when the interval between the charged electret 8 and the charge carrier 7 was 0.9 mm, and the electrostatic forces acting on the three layers 72, 73, and 74 were collectively shown. It can be seen from FIG. 9 that even if the distance between the charge retention layer 71 and the potential control layer 73 is increased from 0.1 mm to 0.5 mm, the electrostatic force acting on the charge carrier 7 remains substantially zero and is within ±0.4 mN. EXAMPLES

[0021] In Example 1, the thickness of the potential control layer 73 was increased from 0.1 mm to 0.5 mm at intervals of 0.1 mm, without changing other conditions. In the same manner as in Example 2, the electrostatic force acting on the four-layered charge carrier 7 was simulated, and the results are shown in FIG. It can be seen from FIG. 10 that even if the thickness of the potential control layer 73 is changed, the electrostatic force acting on the four-layer charge carrier 7 remains unchanged at 0.2 mN, and is essentially zero. EXAMPLES

[0022] In Example 1, the width of the potential control layer 73 was changed from 5.0 mm, which is the same as the width of the charge retention layer 71, to 0.8 mm, which is 20% of the width of the charge retention layer 71, without changing other conditions. The results of simulating the electrostatic force acting on the four-layer charge carrier 7 in this case, as in Example 2, are shown in FIG. It was expected that if the width of the potential control layer 73 becomes narrower than that of the charge retention layer 71, the electrostatic force acting on the charge carrier would correspondingly change significantly to the negative side, but unexpectedly, it was found that if the width was 30% or more of the width of the charge retention layer, the electrostatic force would remain almost unchanged at 0.15 mN-0.2 mN. Even if the width of the charge control layer 73 was reduced to 0.8 mm, the electrostatic force acting was -0.15 mN, which is essentially zero. EXAMPLES

[0023] In Example 1, the potential of the potential control layer 73 was changed from the ground potential to ±200 V without changing other conditions. When the surface potential of the charged electret 8 was +338 V and the distance between the charged electret 8 and the charge carrier 7 was 0.9 mm, the potential of the charge carrier 7 was −222 V, so it was changed between these values. At that time, the electrostatic force acting on the four-layer charge carrier 7 was simulated in the same manner as in Example 2, and the results are shown in FIG. From FIG. 12, it can be seen that if the potential of the potential control layer 73 is between the potential of the charged electret 8 and the potential of the charge retention layer 71 at that time, the electrostatic force acting on the four-layer charge carrier 7 is almost unchanged at 0.15 mN-0.25 mN and is essentially zero. EXAMPLES

[0024] In Example 1, the thickness of the support including the dielectric support layer 71, the potential control layer 72, and the dielectric support layer 73 was changed from 1.9 mm to 3.4 mm at the top and 1.15 mm and 0.78 mm at the bottom, without changing other conditions. The results of simulating the electrostatic force acting on the four-layer charge carrier 7 in the same manner as in Example 2 are shown in Figure 13. 13, it can be seen that the electrostatic force acting on the four-layered charge carrier 7 is virtually zero, ranging from 0.15 mN to 0.30 mN. Therefore, it can be seen that the thickness of the entire support including the potential control layer 73 can be as thin as possible as long as the mechanical strength is allowed. EXAMPLES

[0025] In Example 1, the thickness of the charge retention layer 71 was changed from 1.6 mm to 0.05 mm while keeping the other conditions unchanged. The results of simulating the electrostatic force acting on the four-layer charge carrier 7 in this case, as in Example 2, are shown in FIG. It can be seen from FIG. 14 that even if the thickness of the charge retention layer 71 is changed from 1.6 mm to 0.05 mm, the electrostatic force acting on the four-layer charge carrier 7 hardly changes from 0.15 mN to 0.30 mN and is essentially zero. EXAMPLES

[0026] From the above simulation results, it is understood that the charge retention layer 71, the potential control layer 73, and the dielectric layer 72 therebetween can all be thin. It is also understood that the thickness of the main dielectric support layer 74 located in the middle can be thin as long as the required mechanical strength is obtained. It is also understood that the potential of the potential control layer 73 can be grounded, and that its width can be at least 1.5% of the width of the charge retention layer. Based on this information, the structure of the high charge low potential four-layered charge carrier was considered, and its output was calculated by simulation. In the structure of the four-layered charge carrier 7 shown in Figure 6, the thickness of the charge retention layer 71 was 0.04 mm, the thickness of the potential control layer 73 was 0.02 mm, the width was 2.5 mm, and the potential was 0 V. The thickness of the dielectric layer 72 between the charge retention layer 71 was 0.2 mm, and the thickness of the dielectric layer 74 between the upper and lower potential control layers 73 was 0.24 mm. As a result, the thickness of the dielectric layer between the upper and lower charge retention layers 71 was 0.68 mm, and the thickness of the charge carrier 7 was 0.76 mm. This is a sufficient thickness to maintain mechanical strength. The width and depth of the charge carrier 7 were 5.0 mm and 30.0 mm, respectively.

[0027] The four-layered charge carrier 7 can be easily fabricated by known four-layered PCB fabrication techniques. In this case, it is also possible to fabricate multiple four-layered charge carriers 7 radially on a dielectric disk with a diameter of 10 cm, as shown in Figure 15. Hereinafter, this disk will be referred to as the charge carrier plate 16. A corona discharge was applied to the surface of a resin layer with a width of 7.3 mm, a thickness of 0.04 mm, and a relative dielectric constant of 2.0, resulting in a surface charge density of 0.15 mC / m 2The charged electret 8 was formed by charging the charged electret 8 with an electric charge. The surface potential of the charged electret 8 was +338 V. When the charge carrier 7 was placed directly below the charged electret 8 with a gap of 0.1 mm and the charge retention layer 71 was grounded, a charge of -9.3 nC was charged in the charge retention layer 71 by electrostatic induction. A recovery electrode 9 with a width of 10.4 mm was placed 22.4 mm away from the charging electret 8. Its potential was -10,000 V. The charging electret 8 and the recovery electrode 9 can be prepared in a radial arrangement in multiple sets on a dielectric disk with a diameter of 10 cm and a thickness of 0.5 mm, as shown in Figure 16. Hereinafter, the disks are referred to as charging and recovery disks 17 and 18.

[0028] As shown in Figure 17, one electrostatic generator is made by sandwiching the charge carrier disk 16 between the charge recovery disks 17 and 18 on the same axis 19. Hereinafter, this is called one set. However, the characteristic of this four-layer charge carrier is that the thrust is very low. Therefore, it is very wasteful to rotate only one charge carrier disk 16 by an external force. Therefore, it is efficient to stack one set consisting of the charge carrier disk 16 and the charge recovery disks 17 and 18 in multiple stages as shown in Figure 18, and rotate many charge carrier disks 16 simultaneously with one motor 20. For example, the thickness of one set consisting of one charge carrier disk 16 and one charge recovery disk 17 is 1.4 mm, so 70 sheets can be stacked in a square container with a height of 10 cm. The charge recovery disk has a charge electret 8 and a recovery electrode 9 on the front and back, so only one charge recovery disk can be placed between the charge carrier disks 16 as shown in Figure 18.

[0029] Since the thrust is low, it is assumed that the charge carrier disk 16 rotates at 10,000 rpm. In other words, it rotates 167 times per second. There are 12 charge carriers 7 on the charge carrier disk as shown in FIG. 15, each of which is a charged electret, charged with a charge of 9.3 nC, and transported to the recovery electrode of +10,000 V. There are six pairs (units) of charged electrets 8 and recovery electrodes 9 on the charge recovery disks 17 and 18. Therefore, when the charge carrier disk 16 rotates once, one charge carrier passes through the charge recovery unit six times, so 9.3nC*6=55.8nC The charge is collected by the collection electrode 9. Since there are 12 four-layer charge carriers 7 on the charge carrier disk 16, the following charges are collected in one rotation: 55.8nC * 12=669.6nC The electric charge is collected. Since 70 charge carrier disks 16 are stacked in a 10 cm square generator, the following charges are collected in one rotation: 669.6nC * 70=46872nC The 70 charge carrier disks 16 rotate 167 times per second, so the following charges are collected per second: 46872nC * 167=7827624nC That is, a charge of 7.8 C is collected. The collection current is 7.8 A and the collection potential is 10,000 V, so the amount of electricity generated by a 10 cm cubic electrostatic generator is 7.8A * 10000V=78000W=78kW It can also be. However, this configuration is by no means the best, and it is possible to further increase the output with simple improvements. For example, if the surface charge density of the charging electret 8 is reduced to -0.15 mC / m 2 The highest value currently in use is -1.5mC / m 2 If the spacing between the charge carrier layer and the charge storage layer is increased from 0.1 mm to 0.05 mm, the amount of charge transported will be 10 times as much. Furthermore, if the distance between the charge carrier layer and the charge storage layer is reduced from 0.1 mm to 0.05 mm, the amount of charge transported will be four times as much. Also, by narrowing the distance between the charge carriers 7 on the charge carrier disk 16 and increasing the number from 12 to 24 or 36, the amount of charge can be doubled or tripled. Other currently unthinkable improvement ideas are likely to be proposed by engineers around the world in the near future, which will further increase the output.

[0030] Although the above explanation is for a four-layered charge carrier having a conductive charge retention layer on both sides of the dielectric support, the effect of the potential control layer is similarly large for a charge carrier having a charge retention layer on only one side. Also, although the explanation is for a case in which there are two potential control layers in the dielectric support, the effect is similar for a case in which there is one layer or three or more layers. The configuration of the high charge, low potential charge carrier is not limited to the rotating disk type having a plurality of charge retention layers radially arranged on the dielectric disk described above, but is also effective for a dielectric belt circulation type such as a Van de Graaff electrostatic generator. Although the charging method of the charge carrier was explained as electrostatic induction method using a charged electret, corona discharge as in the Van de Graaff method or frictional charging may be used. Furthermore, the charge recovery was explained as a Faraday gauge method, but corona discharge as in the Van de Graaff method or a parallel connection method with a large-capacity recovery capacitor may be used since the charge retention layer 71 and the potential control layer 73 form a capacitor. Since the four-layer charge carrier is characterized by its low thrust, it is possible to use natural forces such as wind and water power instead of an electric motor to rotate a long belt or a large number of stacked disks, or even light hand-cranking. Furthermore, if an electret electrostatic motor (see Patent Document 1) that uses asymmetric electrostatic force is used, it is possible to generate electricity for a long period of time, 100 years, the same as the lifespan of the electret, without the supply of external energy. [Explanation of symbols]

[0031] 1: DC power supply for discharging the Van de Graaff electrostatic generator 2: Discharge electrode for applying positive charge to a Van de Graaff-type electrostatic generator 3: Discharge electrode for removing positive charge from Van de Graaff-type electrostatic generator 4: High voltage electrodes of a Van de Graaff type electrostatic generator 5: Discharge electrode for negative charge application in Van de Graaff-type electrostatic generator 6: Insulating belt of Van de Graaff type electrostatic generator and dielectric support of electrostatic generator 7: Charge carrier 71: Charge retention layer of charge carrier 72: Dielectric layer between the charge storage layer and the potential control layer of the charge carrier 73: Electric potential control layer of charge carrier 74: Dielectric support for charge carrier 8: Rechargeable electret 9: Charge recovery electrode 10: Capacitor that stores the recovered charge 11: Conductive terminal for charge charging 12: Conductive terminal for charge recovery 13: Electrostatic force acting on the charge carrier in the -X direction 14: Electrostatic force acting on the charge carrier in the Y direction 15: Electrostatic force acting on the charge carrier in the +X direction 16: Charge carrier disk with charge retention layer formed radially 17: Upper charge / recovery disk with charge electret and recovery electrodes formed radially 18: Lower charge and recovery disk on which the charge electret and recovery electrodes are radially formed 19: Rotation axis (support) of the charge carrier disk 20: Electric motor that rotates multiple charge carrier disks

Claims

1. An electrostatic generator comprising a conductive potential control layer disposed adjacent to a charge carrier having a conductive charge retention layer on the surface of a dielectric support.

2. 2. The charge carrier of claim 1, further comprising a potential control layer disposed within the dielectric support of the charge carrier.

3. 2. The charge carrier of claim 1, wherein the potential control layer is applied with a potential intermediate between the potential of a charge source (e.g., a charged electret) of the charge carrier and the potential of the charge storage layer.

4. 2. The charge carrier of claim 1, wherein the potential control layer is grounded.

5. 2. The charge carrier of claim 1, wherein the potential control layer is thin.

6. 2. The charge carrier of claim 1, wherein the potential control layer has a thickness of 0.1 mm or less.

7. 2. The charge carrier of claim 1, wherein the width of the potential control layer is 1.5% or more of the width of the charge retention layer.

8. 2. The charge carrier of claim 1, wherein the thickness of the charge storage layer is reduced.

9. 2. The charge carrier of claim 1, wherein the charge retention layer has a thickness of 0.05 mm or less.

10. 2. The charge carrier of claim 1, wherein the distance between the charge retention layer and the potential control layer is made thin.

11. 2. The charge carrier according to claim 1, wherein the distance between the charge retention layer and the potential control layer is 0.1 mm or less.

12. 2. The charge carrier of claim 1, wherein the thickness of the support for supporting the charge storage layer is reduced.

13. 2. The charge transport member according to claim 1, wherein the thickness of the support for supporting the charge retention layer is 1.0 mm or less.

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