Weight and / or layer thickness measuring equipment and substrate processing systems, and methods including such equipment

Abstract

To provide weight and / or layer thickness measuring equipment and substrate processing systems, and methods including such equipment.SOLUTION: A weight and / or layer thickness measurement system includes: (a) a support base for supporting an object; (b) an oscillator source applying oscillating frequency to the support base; (c) a strain sensor measuring strain induced in the support base by the oscillation; and (d) a phase locked loop module connected to the oscillator source and strain sensor. The oscillating frequency applied to the support base is modified based on phase difference information determined by the phase locked loop module to locate a resonant frequency for the support base and supported object. The resonant frequencies before and after processing are used to determine weight and / or thickness of a layer on the object.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] Some aspects of the present disclosure generally relate to weight and / or layer thickness measurement systems that use, for example, resonant frequency to determine the weight of an object (e.g., a layer applied to a substrate) and / or the thickness of a layer deposited on the object. Additional or alternative aspects of the technology relate to systems and methods for determining the weight and / or thickness of a layer applied to or removed from a substrate, for example, during a layer deposition and / or etching process. [Background technology]

[0002] A material layer is generally deposited on a substrate during the manufacture of semiconductor devices, such as during the manufacture of integrated circuits and electronic devices. Material layer deposition is generally accomplished by supporting the substrate in a substrate processing chamber arrangement, heating the substrate to a desired deposition temperature, and flowing one or more material layer precursor gases through the chamber arrangement and across the substrate. As the precursor gases flow across the substrate, a material layer is gradually grown on the surface of the substrate, typically according to the temperature of the substrate and the environmental conditions within the chamber arrangement.

[0003] In a cluster-type semiconductor vacuum processing tool, multiple substrate processing chambers may be combined with a single substrate handling chamber that moves substrates in and out of the substrate processing chambers and in and out of the entire substrate processing system. Such a system allows multiple substrates to be processed simultaneously using common equipment provided in the substrate handling chamber.

[0004] Integrated circuit fabrication also includes steps of etching layers of material formed on a substrate to remove material at selected locations. Such etching steps typically include applying a mask to the substrate and removing the material not covered by the mask using, for example, an etchant or gas, plasma, etc.

[0005] Integrated circuits are very small, and therefore the amount of material applied during a layer deposition step and / or removed during an etching step is typically very small. Nevertheless, it is important to apply or remove precise amounts of material to ensure that the final integrated circuit product operates and functions in a desired manner. Because layer deposition steps are typically performed in complex systems (e.g., "cluster" type substrate processing systems as described above) under high temperature and very low pressure processing conditions, it may take a significant amount of time for a manufacturer to discover if one or more substrate processing steps and / or substrate processing chambers are not functioning properly. In conventional substrate processing systems, to determine the thickness of a layer on the substrate, the processed substrate must be removed from the system and measured using a stand-alone film thickness measurement method such as ellipsometry. This process is very slow. If there is a problem with a manufacturing step and / or substrate processing chamber, a significant number of defective products may be produced before the problem is discovered, resulting in significant waste and increased costs.

[0006] Also, in conventional systems, layer thickness measurements can only be performed on a limited sample of the substrate to prevent throughput impact on the process line.

[0007] In other situations, researchers and engineers can use quartz crystal microbalance (QCM) techniques to measure film thickness on coupons, but this method is only effective during recipe development and not for production and / or high volume manufacturing (HVM) lines.

[0008] While conventional semiconductor manufacturing systems and methods are generally already acceptable for their intended purposes, there is room for improvement. For example, early detection of potential problems with substrate processing chambers and / or methods that result in improper layer deposition and / or etching results would be an advantageous advancement in the art. Summary of the Invention

[0009] Some aspects of the technology relate to weight and / or layer (e.g., film) thickness measurement systems that use resonant frequencies to determine the weight of an object (e.g., the weight of a layer (e.g., film) applied to a substrate) and / or the thickness of a layer (e.g., film) on an object. Additional or alternative aspects of the technology relate to systems and methods for determining the weight and / or thickness of a layer applied to or removed from a substrate, e.g., in situ or in-line during a layer deposition and / or etching process and / or within a layer deposition and / or etching equipment or system. Additional or alternative aspects of the technology relate to cluster-type substrate processing systems and methods that include a metrology station (e.g., layer weight and / or layer thickness measurement system) within the substrate handling chamber and / or within a separate chamber or station that engages the substrate handling chamber.

[0010] A weight and / or layer thickness measurement system according to at least some embodiments of the present technology includes one or more of: (a) a support base including a support surface for supporting an object to be weighed; (b) an oscillator source configured to apply an oscillation frequency to the support base; (c) a strain sensor configured to measure a strain induced in the support base by the oscillator source; and / or (d) a phase-locked loop module connected to the oscillator source and the strain sensor, wherein the oscillation frequency applied to the support base by the oscillator source is modified based on phase difference information determined by the phase-locked loop module to find a resonant frequency of the support base and any object supported by the support base.

[0011] In addition to or in the alternative to one or more of the above features, a weight and / or layer thickness measurement system according to at least some embodiments of the present technology may include one or more of: (i) a memory for storing data representing a resonant frequency; and / or (ii) a computer processing system programmed and adapted to: (a) receive input data representing a first resonant frequency determined for the support base and a first object supported thereon; (b) receive input data representing a second resonant frequency determined for the support base and a second object supported thereon; and (c) determine a weight difference between (1) the support base and the second object supported thereon, and (2) the support base and the first object supported thereon, based on the second resonant frequency and the first resonant frequency.

[0012] In addition to or in the alternative to one or more of the above features, in at least some embodiments of the present technology, the support base and the first object supported thereon comprise a substrate prior to the layer deposition process, and the support base and the second object supported thereon comprise a substrate after the layer deposition process, the substrate comprising a layer to be deposited thereon.

[0013] In addition to or in the alternative to one or more of the above features, in at least some embodiments of the present technology, the computer processing system is further programmed and adapted to determine a layer thickness based on a weight difference between (i) the support base and a second object supported thereon, and (ii) the support base and a first object supported thereon.

[0014] In addition to or in the alternative to one or more of the above features, in at least some implementations of the present technology, the oscillator source comprises a piezoelectric resonator and the strain sensor comprises a piezoelectric strain sensor.

[0015] A substrate processing system in accordance with at least some embodiments of the present technology includes one or more of: (A) a first substrate handling chamber including a first plurality of component mounting areas, the first plurality of component mounting areas including (i) a first load lock module mounting area configured to engage a first load lock module where incoming substrates are received for processing and where processed outgoing substrates are discharged, (ii) a second load lock module mounting area, (iii) a first plurality of substrate processing chamber mounting areas, and (iv) a metrology station mounting area; (B) a load lock module connected to the second load lock module mounting area; (C) a second substrate handling chamber including a second plurality of component mounting areas, the second plurality of component mounting areas including (i) a third load lock module mounting area that engages the load lock module, and (ii) a second plurality of substrate processing chamber mounting areas; and / or (D) a metrology station connected to the metrology station mounting area, the metrology station configured to measure at least one of a weight of a substrate, a weight of a layer on the substrate, or a layer thickness on the substrate.

[0016] In addition to or in the alternative to one or more of the above features, in at least some implementations of the technology, the metrology station is configured to: (a) determine a first resonant frequency of the support base and a weighed substrate supported on the support base prior to processing the substrate in the substrate processing chamber; (b) determine a second resonant frequency of the support base and a substrate supported on the support base after processing; and (c) determine a weight difference of the substrate after processing and before processing based on the second resonant frequency and the first resonant frequency.

[0017] In addition to or in the alternative to one or more of the above features, in at least some embodiments of the present technology, the metrology station is further configured to determine a thickness of a layer applied to the substrate during processing based on the weight difference.

[0018] In addition to or in the alternative to one or more of the above features, in at least some embodiments of the present technology, the measurement station includes one or more of: (A) a support base including a support surface for supporting a substrate to be weighed; (B) an oscillator source configured to apply an oscillation frequency to the support base; (C) a strain sensor configured to measure a strain induced in the support base by the oscillator source; and / or (D) a phase-locked loop module connected to the oscillator source and the strain sensor, wherein the oscillation frequency applied to the support base by the oscillator source is modified based on the phase difference information determined by the phase-locked loop module to find a resonant frequency of the support base and the substrate supported by the support base.

[0019] In addition to or in the alternative to one or more of the above features, in at least some implementations of the present technology, the measurement station comprises one or more of: (A) a memory for storing data representing the resonant frequencies; and / or (B) a computer processing system programmed and adapted to: (i) receive input data representing a first resonant frequency determined for the support base and a first substrate supported thereon; (ii) receive input data representing a second resonant frequency determined for the support base and a second substrate supported thereon; and (iii) determine a weight difference between (1) the support base and the second substrate supported thereon, and (2) the support base and the first substrate supported thereon, based on the second resonant frequency and the first resonant frequency.

[0020] In addition to or in the alternative to one or more of the above features, in at least some embodiments of the present technology, the support base and a first substrate supported thereon comprise a substrate prior to the layer deposition process, and the support base and a second substrate supported thereon comprise a substrate after the layer deposition process, the second substrate comprising a layer to be deposited thereon.

[0021] In addition to or in the alternative to one or more of the above features, in at least some embodiments of the present technology, the computer processing system is further programmed and adapted to determine a layer thickness based on a weight difference between (i) the support base and the second substrate supported thereon, and (ii) the support base and the first substrate supported thereon.

[0022] In addition to or in the alternative to one or more of the above features, in at least some implementations of the present technology, the support base and the first substrate supported thereon comprise a substrate prior to the etching process, and the support base and the second substrate supported thereon comprise a substrate after the etching process, the second substrate comprising an etched layer.

[0023] In addition to or in the alternative to one or more of the above features, in at least some implementations of the present technology, the oscillator source comprises a piezoelectric resonator and the strain sensor comprises a piezoelectric strain sensor.

[0024] A substrate processing system in accordance with at least some embodiments of the present technology includes: (A) a first substrate handling chamber having (i) a first surface configured to receive an incoming substrate for processing and for discharging a processed substrate; (ii) a second surface extending at an oblique angle relative to the first surface, the second surface configured to engage the first substrate processing chamber; and (iii) a third surface extending at an oblique angle relative to the first surface, the third surface configured to engage the second substrate processing chamber. (B) a load lock module connected to the sixth surface; and (C) a second substrate handling chamber having (i) a seventh surface connected to the load lock module; and (ii) an eighth surface extending at an oblique angle to the seventh surface, the eighth surface engaging a third substrate processing chamber. (iii) a ninth surface extending at an oblique angle relative to the seventh surface, the ninth surface configured to engage a fourth substrate processing chamber; (iv) a tenth surface extending at an oblique angle relative to the eighth surface, the tenth surface configured to engage a fifth substrate processing chamber; and (v) an eleventh surface extending at an oblique angle relative to the ninth surface, the eleventh surface configured to engage a sixth substrate processing chamber; and / or (D) a second substrate handling chamber including one or more substrate supports for holding a substrate being transported between the first substrate handling chamber and the second substrate handling chamber through the sixth and seventh faces, the measurement station being mounted to one of the fourth or fifth faces.

[0025] In addition to or as an alternative to one or more of the above features, in at least some embodiments of the present technology, the metrology station is mounted on the fourth surface and the substrate processing system further comprises a second metrology station for measuring at least one of a weight of the substrate, a weight of a layer on the substrate, or a layer thickness on the substrate mounted on the fifth surface.

[0026] A substrate processing system according to at least some embodiments of the present technology includes one or more of: (A) a first substrate handling chamber including an internal chamber and a first robot arm mounted within the internal chamber; (B) a first substrate processing chamber coupled to the first substrate handling chamber via a first gate valve, a portion of the first robot arm extending through the first gate valve and into the first substrate processing chamber configured to move a substrate in and out of the first substrate processing chamber; and / or (C) a weight and / or layer thickness measurement system located within the internal chamber.

[0027] In addition to or in the alternative to one or more of the above features, in at least some embodiments of the present technology, the weight and / or layer thickness measurement system is configured to: (a) determine a first resonant frequency of the support base and a weighed substrate supported on the support base before processing the substrate in the first substrate processing chamber; (b) determine a second resonant frequency of the support base and a substrate supported on the support base after processing the substrate in the first substrate processing chamber; and (c) determine a weight difference of the substrate after processing and before processing in the first substrate processing chamber based on the second resonant frequency and the first resonant frequency.

[0028] In addition to or as an alternative to one or more of the above-mentioned features, in at least some embodiments of the present technology, the weight and / or layer thickness measurement system is further configured to determine a thickness of a layer applied to the substrate during processing in the first substrate processing chamber based on the weight difference.

[0029] In addition to or in the alternative to one or more of the above-mentioned features, in at least some embodiments of the present technology, a weight and / or layer thickness measurement system includes one or more of: (A) a support base including a support surface for supporting a substrate to be weighed; (B) an oscillator source configured to apply an oscillation frequency to the support base; (C) a strain sensor configured to measure a strain induced in the support base by the oscillator source; and (D) a phase-locked loop module connected to the oscillator source and the strain sensor, wherein the oscillation frequency applied to the support base by the oscillator source is modified based on phase difference information determined by the phase-locked loop module to find a resonant frequency of the support base and the substrate supported by the support base.

[0030] In addition to or in the alternative to one or more of the above features, in at least some embodiments of the present technology, the weight and / or layer thickness measurement system further includes: (A) a memory for storing data representing the resonant frequencies; and (B) a computer processing system programmed and adapted to: (a) receive input data representing a first resonant frequency determined for the support base and a first substrate supported thereon; (b) receive input data representing a second resonant frequency determined for the support base and a second substrate supported thereon; and (c) determine a weight difference between (i) the support base and the second substrate supported thereon, and (ii) the support base and the first substrate supported thereon, based on the second resonant frequency and the first resonant frequency.

[0031] In addition to or in the alternative to one or more of the above features, in at least some embodiments of the present technology, the support base and a first substrate supported thereon comprise a substrate prior to the layer deposition process, and the support base and a second substrate supported thereon comprise a substrate after the layer deposition process, the second substrate comprising a layer to be deposited thereon.

[0032] In addition to or in the alternative to one or more of the above features, in at least some embodiments of the present technology, the computer processing system is further programmed and adapted to determine a layer thickness based on a weight difference between (i) the support base and the second substrate supported thereon, and (ii) the support base and the first substrate supported thereon.

[0033] In addition to or in the alternative to one or more of the above features, in at least some implementations of the present technology, the oscillator source comprises a piezoelectric resonator and the strain sensor comprises a piezoelectric strain sensor.

[0034] In addition to or in the alternative to one or more of the above features, a substrate processing system according to at least some embodiments of the present technology further comprises a second substrate processing chamber coupled to the first substrate handling chamber via a second gate valve, a portion of the first robot arm extending through the second gate valve and into the second substrate processing chamber configured to move the substrate in and out of the second substrate processing chamber, the first robot arm being movable to move the substrate (a) between the weight and / or layer thickness measurement system and the first substrate processing chamber, and (b) between the weight and / or layer thickness measurement system and the second substrate processing chamber.

[0035] In addition to or in the alternative to one or more of the features discussed above, a substrate processing system according to at least some embodiments of the present technology further comprises a plurality of additional substrate processing chambers coupled to the first substrate handling chamber, wherein portions of the first robot arm extend into each of the plurality of additional substrate processing chambers and are configured to move a substrate in and out of the additional substrate processing chambers, and wherein the first robot arm is movable to move a substrate (a) between the weight and / or layer thickness measurement system and the first substrate processing chamber, and (b) between the weight and / or layer thickness measurement system and each of the additional substrate processing chambers.

[0036] In accordance with at least some embodiments of the present technology, a method of determining a weight and / or thickness of a layer on a substrate may include one or more of: (a) placing the substrate on a support surface of a support base; (b) applying an oscillation frequency to the support base with the substrate supported thereon; (c) adjusting the oscillation frequency applied to the support base to position a first resonant frequency of the support base with the substrate supported on the support surface; (d) processing the substrate to add a layer of material to the substrate or remove material from a layer on the substrate, thereby forming a treated substrate; (e) placing the treated substrate on the support surface of the support base; (f) applying an oscillation frequency to the support base with the treated substrate supported thereon; and (g) adjusting the oscillation frequency applied to the support base to position a second resonant frequency of the support base with the treated substrate supported thereon; and / or (h) determining at least one of a weight or thickness of a layer on the treated substrate based on the second resonant frequency and the first resonant frequency.

[0037] In addition to or as an alternative to one or more of the above features, methods according to at least some embodiments of the present technology further include one or more of: (a) placing a reference substrate having a known weight on a support surface of a support base; (b) applying an oscillation frequency to the support base, the reference substrate supported thereon; (c) adjusting the oscillation frequency applied to the support base with the reference substrate supported thereon to find a reference resonant frequency; and / or (d) using the known weight to select the reference resonant frequency and an initial oscillation frequency for calibration and / or for measurement.

[0038] In addition to or in the alternative to one or more of the features above, (A) the steps of placing the substrate on the support surface of the support base and placing the treated substrate on the support surface of the support base include moving the substrate and the treated substrate using a first robotic arm, (B) prior to processing of the substrate, the first robotic arm moves the substrate from the support surface of the support base to a substrate processing chamber coupled to a substrate handling chamber including the support base, and (C) after processing of the substrate, the first robotic arm moves the substrate from the substrate processing chamber to the support surface of the support base located within the substrate handling chamber.

[0039] In addition to or in the alternative to one or more of the above features, the steps of applying an oscillation frequency to the support base with a substrate supported thereon, and applying an oscillation frequency to the support base with a treated substrate supported thereon, include vibrating the support base using a piezoelectric resonator.

[0040] In addition to or in the alternative to one or more of the above features, the steps of adjusting an oscillation frequency applied to the support base to find the first resonant frequency and adjusting an oscillation frequency applied to the support base to find the second resonant frequency include measuring a strain induced in the support base by a piezoelectric strain sensor, determining a phase difference between the oscillation frequency detected by the piezoelectric strain sensor and the response frequency using a phase-locked loop system, and adjusting the oscillation frequency until the phase difference measured by the phase-locked loop system is approximately -90 degrees.

[0041] This Summary is provided to introduce a selection of concepts related to the technology in a simplified form. These concepts are described in more detail below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. [Brief description of the drawings]

[0042] These and other features, aspects, and advantages of the inventions disclosed herein are described below with reference to drawings of certain specific embodiments, which are intended to illustrate but not to limit the invention.

[0043] [Figure 1] FIG. 1 illustrates a schematic of a substrate processing system including a metrology station, in accordance with some embodiments of the present technique. [Figure 2A] FIG. 2A provides various views of a metrology station and its use in substrate processing, according to some embodiments of the present technology. [Figure 2B] FIG. 2B provides various views of the metrology station and its use in substrate processing, according to some embodiments of the present technology. [Figure 2C] FIG. 2C provides various views of the metrology station and its use in substrate processing, according to some embodiments of the present technology. [Figure 2D] FIG. 2D provides various views of a metrology station and its use in substrate processing, according to some embodiments of the present technology. [Figure 2E] FIG. 2E provides various views of the metrology station and its use in substrate processing, according to some embodiments of the present technology. [Diagram 3] FIG. 3 provides a flow chart generally illustrating method features in accordance with some embodiments of the present technology. [Figure 4] FIG. 4 provides a flow chart illustrating more detailed embodiments and features of methods according to some embodiments of the present technology. [Diagram 5] FIG. 5 provides a flow chart illustrating the calibration and / or use of reference weights according to some embodiments of the present technology. [Figure 6] FIG. 6 illustrates a schematic of a substrate processing system including one or more metrology stations, in accordance with some additional embodiments of the present technology.

[0044] It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale and / or with complete detail, for example, the relative size of some of the elements in the figures may be exaggerated compared to other elements to help improve understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0045] Reference is now made to the drawings in which like reference numbers identify analogous structural features or aspects of the subject disclosure.

[0046] As mentioned above, material layers are typically deposited onto a substrate during the manufacture of semiconductor devices, such as during the manufacture of integrated circuits and electronic devices. FIG. 1 illustrates a schematic top view of a "cluster-type" substrate processing system 100 according to some embodiments of the present technology. This exemplary substrate processing system 100 includes a substrate handling chamber 102 that operatively connects with one to four substrate processing chambers 104A-104D via gate valves 106. Each substrate processing chamber 104A-104D includes one or more substrate supports 108 and is equipped to receive a substrate thereon and hold the substrate during processing (e.g., during material layer deposition as described above). FIG. 1 illustrates each substrate processing chamber 104A-104D including four substrate supports 108 onto which a substrate can be placed during processing. More or fewer substrate supports 108 may be provided within each substrate processing chamber 104A-104D (e.g., the substrate processing chambers 104A-104D may be dual chamber modules (DCM) or quad chamber modules (QCM)). The substrate processing chambers 104A-104D according to some embodiments of the present technology may include four more substrate supports 108 located vertically below the four substrate supports 108 shown in the top view of FIG. 1. Each of the substrate processing chambers 104A-104D may have the same structure, or one or more of the substrate processing chambers 104A-104D may have a different structure than the other substrate processing chambers 104A-104D present.

[0047] The substrate handling chamber 102 includes a robotic arm 110 that is used to move substrates into and out of the various substrate processing chambers 104A-104D through a gate valve 106. In use, the gate valve 106 is opened and an end effector 110A of the robotic arm 110 extends through the open gate valve 106 to insert a substrate into or remove a substrate from the internal chambers of the substrate processing chambers 104A-104D (e.g., to place a substrate on or remove a substrate from a substrate support 108 within the substrate processing chambers 104A-104D). When the robotic arm 110 is retracted from the substrate processing chambers 104A-104D, the gate valve 106 is closed, thereby sealing the substrate processing chambers 104A-104D from the substrate handling chamber 102. Other desired actions can then be performed within the substrate processing chambers 104A-104D (eg, material layer deposition, etc.) and / or the substrate handling chamber 102.

[0048] 1 further shows that this exemplary substrate processing system 100 includes a load lock module 112. The load lock module 112 is connected to the substrate handling chamber 102 by one or more gate valves 116. The load lock module 112 includes substrate holding components 114 (e.g., two "set plates" shown in FIG. 1) to hold the substrate on its way into the substrate handling chamber 102 for further processing and on its way out of the substrate handling chamber 102 (after processing is completed). The end effector 110A of the robot arm 110 moves through the gate valve 116 (when open) to move the substrate from the load lock module 112 into the substrate handling chamber 102 (for layer deposition and / or other processing) and from the substrate handling chamber 102 into the load lock module 112 (after processing is completed). The load lock module 112 and gate valves 116 keep the substrate isolated from the environment of the substrate handling chamber 102 until the conditions (e.g., temperature, pressure, atmospheric content, etc.) within the substrate handling chamber 102 are ready to insert or remove a substrate, e.g., while waiting for all gate valves 106 to be closed.

[0049] The load lock module 112 is further coupled to an equipment front end module 120 via one or more additional gate valves 118. The equipment front end module 120 includes a robot arm 122. An end effector 122A of the robot arm 122 moves through the gate valve 118 (when open) to move substrates from the equipment front end module 120 into the load lock module 112 (for layer deposition and / or other processing) and from the load lock module 112 back into the equipment front end module 120 (after processing is completed). The robot arm 122 of the equipment front end module 120 also picks up new substrates for processing from one of the load ports 124A-124D and returns processed substrates to one of the load ports 124A-124D, e.g., to be transported elsewhere for further processing or other actions.

[0050] FIG. 1 further shows that the substrate handling chamber 102 of this example includes a metrology station 200. This metrology station 200 includes equipment for weighing the substrate 250, for example, before processing in one or more of the substrate processing chambers 104A-104D and after processing in one or more of the substrate processing chambers 104A-104D. By weighing the substrate 250 before and after processing, the weight of a layer of material applied to the substrate 250 (e.g., during a layer deposition process) and / or the weight of material removed from the substrate (e.g., during an etching process) can be determined. From the weight change, the thickness of the layer of material applied to the substrate 250 can also be estimated (e.g., knowing the weight change, the density of the applied material, and the area where the layer is applied on the substrate 250, the thickness of the applied layer can be estimated (e.g., assuming a constant thickness over the area of ​​the substrate 250)). Hence, the metrology station 200 may include a weight and / or layer thickness measurement system.

[0051] According to this particular embodiment of the technology, the metrology station 200 is provided within the inner chamber 102A of the substrate handling chamber 102. In this way, the substrate 250 can be weighed substantially immediately before entering and / or immediately after exiting one of the substrate processing chambers 104A-104D. By taking a weight measurement immediately after processing, the manufacturer may be able to quickly recognize if one(s) of the substrate processing chambers 104A-104D and / or a process or procedure performed in one(s) of the substrate processing chambers 104A-104D is not performing in an intended or expected manner (thereby producing an unsuitable substrate product that may need to be discarded). These features may allow the manufacturer to take corrective action more quickly, thereby reducing scrap and waste. Furthermore, its location within the inner chamber 102A allows the metrology station 200 to be quickly used on processed substrates in any of the multiple substrate processing chambers 104A-104D of this cluster-type substrate processing system 100. Alternatively, if desired, the metrology station 200 may be provided in the load lock module 112, in the equipment front end module 120, and / or in place of one of the substrate processing chambers 104A-104D, and / or more than one metrology station 200. Figure 1 illustrates some of these additional or alternative locations for the metrology station 200 with dashed lines.

[0052] 2A and 2B show an exemplary metrology station 200 for measuring the weight and / or thickness of a layer of material applied to a substrate 250, according to some embodiments of the present technology. As shown in these figures, the exemplary metrology station 200 includes a support base 202 extending to form a support surface 204 for supporting an object to be weighed (e.g., substrate 250). The support base 202 in this example includes (i) a base member 202B that can be supported on an interior bottom surface of the substrate handling chamber 102 (e.g., secured thereto by bolts or other fasteners), (ii) a cylindrical protrusion 202C (having any desired cross-sectional shape, such as square, circular elliptical, oval, rectangular, polygonal, etc.) extending upwardly from the base member 202B, and (iii) a support member 202S at the other end of the cylindrical protrusion 202C. An upper surface of the support member 202S in this example forms or engages the support surface 204. In some implementations of this technique, the entire support base 202 (e.g., the base member 202B, the cylindrical protrusion 202C, and the support member 202S, including the support surface 204) may be formed (e.g., by casting, forging, machining, molding, printing, etc.) as a single, one-piece, integral structure. When taking measurements, one major surface 250A of the substrate 250 is positioned on the support surface 204 (the opposite major surface 250B faces away from the support base 202), as shown, for example, by arrow A in Figures 2A and 2B. The robot arm 110 may move the substrate 250 from one of the substrate processing chambers 104A-104D or from the load lock module 112 to the metrology station 200 (e.g., position the substrate 250 on the support surface 204 of the support base 202).

[0053] 2A and 2B further show that this exemplary metrology station 200 includes an oscillator source 210 configured to apply a force to the support base 202 (e.g., to the cylindrical protrusion 202C in this illustrated example) at an oscillation frequency. The oscillator source 210 may comprise, for example, a piezoelectric resonator of known and commercially available type, or other type of system for inducing mechanical resonance in the support base 202 (e.g., a voice coil). The oscillator source 210 is used to apply a vibration force to the support base 202 to vibrate the support base 202 (and the substrate 250 mounted thereon). By adjusting the oscillation frequency generated by the oscillator source 210, the resonant frequency of the support base 202 and the substrate 250 mounted thereon can be found. The "resonant frequency" referred to throughout this specification may refer to the fundamental (or lowest) resonant frequency of the structure being discussed.

[0054] The metrology station 200 of FIGS. 2A and 2B further includes a strain sensor 212 (e.g., a known and commercially available piezoelectric strain sensor or other type of sensor for measuring strain or displacement). The strain sensor 212 is configured to measure a strain induced in the support base 202 (and the substrate 250 mounted thereon) by an oscillator source 210 that applies a vibration force to the support base 202. A phase-locked loop module 214 is connected to the oscillator source 210 and the strain sensor 212. The phase-locked loop module 214 is conventionally known and commercially available. The phase-locked loop module 214 generates an output signal having a phase related to the phase of an input signal, as is known. Thus, the phase-locked loop module 214 shown in FIG. 2B can be used to (a) compare the phase of the signal detected by the strain sensor 212 and applied to the support base 202 by the oscillator source 210, and (b) adjust the frequency applied to the support base 202 by the oscillator source 210 until the detected phase shift, as determined by the phase-locked loop module 214, is −90°. The -90° phase shift corresponds to the resonant frequency of the support base 202 and the substrate 250 mounted thereon.

[0055] At the resonant frequency, the phase shift is very sensitive and detectable using the phase-locked loop module 214. According to some aspects of the technique, a technique for measuring the thickness / mass of a layer (e.g., a film) applied to a substrate 250 is based on the comparative frequency shift (Δf) between (a) the resonant frequency of the support base 202 loaded with the substrate 250 before layer deposition or etching, and (b) the resonant frequency of the support base 202 loaded with the substrate 250 after layer deposition or etching. This measurement system can be modeled as an ideal second-order dynamic mechanical spring / mass oscillator with a high Q factor (low damping), for example, as shown in the top dotted box of FIG. 2B. In such a model,

[0056]

number

[0057] Generally, adding a layer of material (e.g., a film) to the substrate 250 increases the resonant frequency f of the support base 202 on which the substrate 250 is deposited. n increases, while removing material (e.g., etching) reduces the resonant frequency f n Therefore, a change in mass on the substrate 250 (by adding or removing material) results in a change in the resonant frequency (Δf) that can be detected by direct measurement of the frequency or phase shift. Δf=f n(After substrate 250 treatment)-f n (Before treatment of substrate 250).

[0058] k is constant for the system, and M 202 and M. 250 remains constant for the two measurements, the resonant frequency shift or change Δf observed before and after the substrate 250 treatment is performed is multiplied by M 層 correlates with changes in

[0059] As discussed above, knowing the type of material deposited (including its density) and the area on the substrate 250 to which it was applied, the mass added or removed from the substrate 250 can be determined and / or the layer thickness can be estimated. As a more specific example, for one substrate 250 configuration (a 300 mm diameter substrate 250), a 50 Å layer of molybdenum is known to weigh approximately 4 mg. Thus, if the measured frequency shift is 0.4 mg of Molybdenum, the mass added or removed from the substrate 250 can be determined and / or the layer thickness can be estimated. Layer When making a determination of the change, it can be estimated that the thickness of the molybdenum layer is about 5 Å thick on the substrate 250 (assuming a uniform thickness was deposited).

[0060] Additional features of the metrology station 200 of this example embodiment are shown in FIGURE 2B. As shown, the output from the phase locked loop module 214 may be sent to a computing system 220. The computing system 220 includes a memory 222 for storing data, including, for example, (a) data representing the determined resonant frequency of the support base 202 loaded with the substrate 250 before layer deposition or etching, and (b) data representing the determined resonant frequency of the support base 202 loaded with the substrate 250 after layer deposition or etching. The computing system 220 further includes a computer processing system 224 (e.g., including one or more microprocessors) that is programmed and adapted to: (a) receive input data representing a first resonant frequency determined for the support base 202 and a first object supported thereon (e.g., first substrate 250); (b) receive input data representing a second resonant frequency determined for the support base 202 and a second object supported thereon (e.g., second substrate 250); (c) determine a difference between the second resonant frequency and the first resonant frequency (in some embodiments); and / or (d) determine a weight difference between (i) the support base 202 and the second object supported thereon (e.g., substrate 250 after processing) and (ii) the support base 202 and the first object supported thereon (e.g., substrate before processing) based on the difference between the second resonant frequency and the first resonant frequency. The computer processing system 224 may further generate and transmit an output signal 226, for example, to any desired type of output device and / or in any desired form or format and / or using any desired type of communication protocol.

[0061] 2B-2E further illustrate process features according to some embodiments of the technology. As described above, the determined resonant frequency change and / or weight difference information may correspond to a weight difference between (a) the support base 202 and the substrate 250 supported thereon after a layer deposition process, and (b) the same substrate 250 supported thereon before a layer deposition process (where the weight difference corresponds to a weight of a layer deposited on the substrate 250, e.g., in the substrate processing chambers 104A-104D shown in FIG. 1). For example, FIG. 2C illustrates the substrate 250 mounted on the support surface 204 of the support base 202, with a first layer 254 formed on the upper major surface 250B. The substrate 250 and first layer 254 shown in FIG. 2C may constitute (a) the substrate 250 "after processing" as compared to the substrate 250 shown in FIG. 2B, and (b) the substrate 250 "before processing" as compared to the substrate 250 shown in FIG. 2D. As shown in FIG. 2D, at this stage, the exemplary substrate 250 has two layers 254 and 256 formed thereon (in this illustrated embodiment, layer 256 is formed on layer 254 in, for example, substrate processing chambers 104A-104D as shown in FIG. 1). The mass (and optional thickness) of the first layer 254 can be determined by determining the change in resonant frequency between (a) the combination of the support base 202 and substrate 250 at the stage shown in FIG. 2C and (b) the combination of the support base 202 and substrate 250 at the stage shown in FIG. 2B. The mass (and optional thickness) of the second layer 256 can be determined by determining the change in resonant frequency between (a) the combination of the support base 202 and substrate 250 at the stage shown in FIG. 2D and (b) the combination of the support base 202 and substrate 250 at the stage shown in FIG. 2C.

[0062] In some implementations of the technique, the determined resonant frequency change and / or weight difference information may correspond to (a) a weight difference between the support base 202 and the supported substrate 250 after the etching process, and (b) a weight difference between the support base 202 and the same supported substrate 250 before the etching process (the weight difference corresponds to a weight of material removed from one or more layers on the substrate 250). As mentioned above, FIG. 2D illustrates a substrate 250 mounted on the support surface 204 of the support base 202, with a first layer 254 formed on the top major surface 250B and a second layer 256 formed on the first layer 254. The substrate 250 having the first layer 254 and the second layer 256 illustrated in FIG. 2D may constitute the substrate 250 prior to processing, as compared to the substrate 250 illustrated in FIG. 2E. As shown in Figure 2E, at that stage, and after some further processing, this exemplary substrate 250 includes some etched 258 removed portions of the second layer 256 and some etched 260 removed portions of both the first layer 254 and the second layer 256. By determining the change in resonant frequency between (a) the combination of support base 202 and substrate 250 at the stage shown in Figure 2E and (b) the combination of support base 202 and substrate 250 at the stage shown in Figure 2D, the mass of material removed in the etching process can be determined.

[0063] In other examples of this technique, the determined resonant frequency change and / or weight difference information may correspond to a weight difference between (a) the support base 202 and a first object (e.g., a first substrate 250) and (b) the support base 202 and a second object different from the first object (e.g., a second, different substrate 250).

[0064] 3 provides additional details of a method for determining the weight and / or thickness of layers (e.g., layers 254, 256) on a substrate 250, according to some embodiments of the present technology. In step S300, a resonant frequency is determined for the substrate 250 and support base 202 combination, for example, at metrology station 200. The substrate 250 at this stage may be a new substrate (i.e., no layers deposited thereon) or may have one or more layers already deposited thereon. This step S300 finds the resonant frequency by adjusting the oscillation frequency applied to the substrate 250 and support base 202 combination using the phase-locked loop module 214 until the phase-locked loop module 214 registers a -90° phase shift between the frequency applied by the oscillator source 210 and the measured frequency from the strain sensor 212. The oscillation frequency that induces the -90° phase shift detected by the phase-locked loop module 214 corresponds to the resonant frequency of that support base 202 and substrate 250 combination.

[0065] In step S302, the substrate 250 is placed in a substrate processing chamber (e.g., one of 104A-104D) for a layer deposition process or a material removal process (e.g., an etching process). This step S302 adds mass to the substrate 250 (e.g., as a layer) or subtracts mass from the substrate 250 (e.g., by etching material from the substrate 250). Once the processing in step S302 is completed, in step S304, the substrate 250 with the modified surface is returned to the metrology station 200 and the resonant frequency of this modified combination (modified substrate 250 on support base 202) is determined. Again in step S304, the phase-locked loop module 214 is used to find the resonant frequency by adjusting the oscillation frequency applied to the modified substrate 250 and support base 202 combination until the phase-locked loop module 214 registers a -90° phase shift between the frequency applied by the oscillator source 210 and the measured frequency from the strain sensor 212.

[0066] As described above, adding material to or removing material from the substrate 250 results in a shift in the resonant frequency between the resonant frequency measured in step S300 (before substrate 250 processing) and the resonant frequency measured in step S304 (after substrate 250 processing). This change in resonant frequency correlates to a change in mass of the structure being vibrated (i.e., the support base 202 and the substrate 250 supported thereby). Because the support base 202 and the substrate 250 themselves do not change mass between steps S300 and S304, the only mass change can be attributed to the layer of material deposited on the substrate 250 in step S302, or material removed (e.g., etched) from the substrate in step S302. Thus, in step S306, the method determines the mass change on the substrate 250 based on the change in the measured resonant frequency between steps S300 and S304. Once the mass change on the substrate 250 has been determined in step S306, the layer thickness may be determined in step S308, for example estimated based on the area of ​​the deposited layer and the density of the deposited material.

[0067] FIG. 4 provides additional details of a method according to some embodiments of the present technology, for example, a method for determining the weight and / or thickness of a layer (e.g., layers 254, 256) on a substrate 250. The description of FIG. 4 also refers to the structures described above in conjunction with FIGS. 1-2E. In step S400, the robot arm 110 places the substrate 250 on the support surface 204 of the support base 202. The substrate 250 at this stage may be a new substrate (i.e., no layers deposited thereon) or may have one or more layers already deposited thereon. In step S402, an oscillation frequency is applied to the combination of the support base 202 and the substrate 250 by the oscillator source 210 (e.g., a piezoelectric resonator). In step S404, using the phase-locked loop module 214, the oscillation frequency applied by the oscillator source 210 is adjusted until a resonant frequency is determined for this combination of the substrate 250 and the support base 202. The resonant frequency is determined as the frequency at which the phase-locked loop module 214 registers a -90° phase shift between the frequency applied by the oscillator source 210 and the frequency measured by the strain sensor 212. The resonant frequency determined in step S404 is also referred to as the "first" resonant frequency in this discussion.

[0068] In step S406, the substrate 250 is placed into a substrate processing chamber (e.g., one of 104A-104D) using the robot arm 110, where a layer deposition step (or a material removal step (e.g., an etching step)) is performed. This step S406 adds mass to the substrate 250 (e.g., as a layer) or subtracts mass from the substrate 250 (e.g., by etching material from the substrate 250). Once processing in step S406 is complete, in step S408, the substrate 250 with the modified surface is removed from the substrate processing chamber 104A-104D (or other processing location) and returned to the metrology station 200 and placed (using the robot arm 110) on the support base 202. An oscillation frequency is then applied to the support base 202 holding the modified substrate 250 by the oscillator source 210 in step S410. Using the phase-locked loop module 214 in step S412, the oscillation frequency applied by the oscillator source 210 is adjusted until a resonant frequency is determined for this modified substrate 250 and support base 202 combination. Again, the resonant frequency is determined as the frequency at which the phase-locked loop module 214 registers a -90° phase shift between the frequency applied by the oscillator source 210 and the frequency measured by the strain sensor 212. The resonant frequency determined in step S412 is also referred to as the "second" resonant frequency in this discussion. The difference in resonant frequency between the second resonant frequency (determined in step S412) and the first resonant frequency (determined in step S404) is determined in step S414.

[0069] As mentioned above, adding material to the substrate 250 typically results in an increase in the resonant frequency, i.e., the second resonant frequency (at step S412) is expected to be somewhat higher than the first resonant frequency (measured at step S404). On the other hand, removing material from the substrate 250 typically results in a decrease in the resonant frequency, i.e., the second resonant frequency (at step S412) is expected to be somewhat lower than the first resonant frequency (measured at step S404). The change in resonant frequency correlates with the change in mass of the structure being vibrated (i.e., the support base 202 and the substrate 250 supported thereby). Since the support base 202 and the substrate 250 themselves do not change mass between steps S412 and S404, the only mass change can be attributed to the layer of material deposited on the substrate 250 at step S406 or the material removed (e.g., etched) from the substrate at step S406. Thus, in step S416, the method determines the mass change on the substrate 250 based on the change in measured resonant frequency determined in step S414. Once the mass change on the substrate 250 has been determined, the layer thickness may be determined in step S416, for example estimated based on the area of ​​the layer to be deposited and the density of the material to be deposited.

[0070] 5 illustrates a method for calibrating a metrology station 200 and / or creating a "look-up table" with information useful to the metrology station 200 according to an embodiment of the technology, and a method according to an embodiment of the technology. In this method, in step S500, a reference substrate having a known weight is placed on a support surface 204 (e.g., as shown in FIGS. 2A and 2B) of a support base 202 of the metrology station 200. The metrology station 200 may be located in the substrate handling chamber 102, or in any other suitable location. In step S502, an oscillation frequency is applied to the support base 202 (having a reference substrate mounted thereon) by an oscillator source 210 (e.g., a piezoelectric resonator). In step S504, using a phase-locked loop module 214, the oscillation frequency applied by the oscillator source 210 is adjusted until a resonant frequency is determined for this reference substrate and support base 202 combination. The resonant frequency is determined as the frequency at which the phase locked loop module 214 registers a -90° phase shift between the frequency applied by the oscillator source 210 and the frequency measured by the strain sensor 212. The resonant frequency determined in step S504 is correlated to a reference substrate of known weight in step S506.

[0071] Reference substrates of different known weights can be used to generate data for use as, for example, a "look-up" table (e.g., stored in computer memory) having resonant frequency information associated with a number of different substrate weights. Such data can enable systems and methods according to at least some embodiments of the present technology to determine mass differences associated with layers deposited on a substrate or amounts of material removed from a substrate (during etching) based on changes in resonant frequency before and after a substrate processing method is performed. Additionally or alternatively, this type of data can also provide known combinations of associated mass and resonant frequency information that enable systems and methods according to some aspects of the present technology to interpolate or extrapolate to estimate mass differences associated with resonant frequencies that lie between or near known combinations of associated mass and resonant frequency information.

[0072] Additionally or alternatively, the use of a reference substrate in the method of Figure 5 may be used in conjunction with the method of Figure 4. More specifically, if a resonant frequency is found for a reference substrate close to the weight of the substrate 250 being processed and weighed, information about that resonant frequency may be used as a starting point for steps S402 and / or S410, which may help to more quickly zero out the resonant frequency during steps S404 and / or S412.

[0073] In the systems and methods described above, the metrology station 200 is provided in the substrate handling chamber 102 of a cluster-type substrate processing system 100. Other configurations are possible. For example, as described above, this type of metrology station may be provided in the load lock module 112 and / or the equipment front end module 120, as shown in dashed lines in Figure 1. This type of metrology station may also be provided in place of one of the substrate processing chambers 104A-104D.

[0074] FIG. 6 illustrates another "cluster" type substrate processing system 100A according to some embodiments of the present technology. The substrate processing system 100A may be of a type described in U.S. Provisional Patent Application No. 63 / 524,272, filed June 30, 2023, and entitled "Extended Substrate Processing Systems and Methods with Additional Processing chamber Connectability." U.S. Provisional Patent Application No. 63 / 524,272 is incorporated herein by reference in its entirety. When reference numbers used in FIG. 6 are the same as those used in FIGS. 1-2E, they refer to the same or similar parts, and many of the overlapping descriptions may be omitted.

[0075] 6 includes (a) a first substrate handling chamber 300 (the "inner" substrate handling chamber) including a first robot arm 320 having an end effector 320A, (b) a first load lock module 400 (the "inner" load lock module) connected to one edge or face 300A of the first substrate handling chamber 300, (c) a second load lock module 500 (the "outer" load lock module) connected to an opposite edge or face 300F of the first substrate handling chamber 300, and (d) a second substrate handling chamber 600 (the "outer" substrate handling chamber) including a second robot arm 620 having an end effector 620A. The second load lock module 500 extends between and connects the first substrate handling chamber 300 and the second substrate handling chamber 600. The first load lock module 400 in this embodiment is also connected to an equipment front end module 700 that includes a third robot arm 720 having an end effector 720A. The equipment front end module 700 may include or be connected to a nitrogen gas source for providing a nitrogen gas atmosphere within the equipment front end module 700. The equipment front end module 700 receives new substrates for processing into the substrate processing system 100A and also ejects processed substrates from the substrate processing system 100A via one or more loading ports 800A-800D (using the robot arm 720 to move substrates between the loading ports 800A-800D and the first load lock module 400). Although four loading ports 800A-800D are shown in the embodiment of FIG. 6, more or fewer loading ports may be provided in other embodiments of the technology.

[0076] Each of the first substrate handling chamber 300 and the second substrate handling chamber 600 includes a plurality of substrate processing chamber attachment areas (e.g., on exposed faces 300A-300F and 600A-600E around its sides) that are connected (or connectable) to a plurality of substrate processing chambers 900. The example of FIG. 6 shows two substrate processing chambers 900 connected to faces 300B and 300C of the substrate handling chamber 300, and four substrate processing chambers 900 connected to faces 600B-600E of the substrate handling chamber 600. Substrates are transferred into the substrate processing chambers 900, where one or more layers of material are deposited onto a surface of the substrate and / or other desired substrate processing takes place. FIG. 6 shows each substrate processing chamber 900 including four substrate supports 902 onto which a substrate can be placed during processing. More or fewer substrate supports 902 may be provided in each substrate processing chamber 900 (e.g., the substrate processing chamber 900 may be a dual chamber module (DCM) or a quad chamber module (QCM)). A substrate processing chamber 900 according to some embodiments of the present technology may include another four substrate supports 902 located vertically below the four substrate supports 902 shown in the top view of Figure 6. Each of the substrate processing chambers 900 may have the same structure, or one or more of the substrate processing chambers 900 may have a different structure than others of the other substrate processing chambers 900 present.

[0077] Each of the first substrate handling chamber 300 and the second substrate handling chamber 600 is connected to its respective substrate processing chamber 900 via one or more gate valves 1000. Although two gate valves 1000 are shown connecting the substrate handling chambers 300, 600 with each of their respective substrate processing chambers 900, in other embodiments of the technology, each substrate processing chamber 900 may be provided with more or fewer gate valves 1000. The substrate processing chambers 900 according to some embodiments of the technology may be connected to their respective substrate handling chambers 300, 600 by another two gate valves 1000, for example, located vertically below the two gate valves 1000 shown in the top view of FIG. 6. When closed, the gate valves 1000 sealingly separate the substrate handling chambers 300, 600 from their respective substrate processing chambers 900 (so that independent atmospheric conditions may be maintained within each chamber). When open, the gate valve 1000 provides an opening (e.g., a substrate transport slot) through which the end effector 320A, 620A of the robot arm 320, 620 can extend to move a substrate into and out of the substrate processing chamber 900. The openings through the gate valve 1000 align with substrate transport slots provided in the substrate processing chamber 900 and the substrate handling chambers 300, 600 to allow the substrate to be moved between the substrate processing chamber 900 and the substrate handling chambers 300, 600 through the gate valve 1000. Each of the gate valves 1000 may have the same structure, or one or more of the gate valves 1000 may have a different structure than the other gate valves 1000 present.

[0078] One side of the first load lock module 400 connects to the equipment front end module 700 by one or more gate valves 1100A (two shown in FIG. 6 ) and the opposite side of the first load lock module 400 connects to the first substrate handling chamber 300 by one or more gate valves 1100B (two shown in FIG. 6 ). The first load lock module 400 further includes one or more substrate supports 402 (two shown in FIG. 5 , e.g., “set plates”) for holding a substrate while it waits to be moved into the equipment front end module 700 or the first substrate handling chamber 300. When closed, the gate valves 1100A, 1100B sealingly isolate the load lock module 400 from the equipment front end module 700 and the substrate handling chamber 300 (so that independent atmospheric conditions may be maintained in each chamber). When open, the gate valve 1100A provides an opening (e.g., a substrate transport slot) through which the end effector 720A of the robot arm 720 can extend to move a substrate into and out of the equipment front end module 700. The opening through the gate valve 1100A aligns with substrate transport slots provided in the equipment front end module 700 and the first load lock module 400 to allow substrates to be moved between the equipment front end module 700 and the first load lock module 400 through the gate valve 1100A. When open, the gate valve 1100B provides an opening (e.g., a substrate transport slot) through which the end effector 320A of the robot arm 320 can extend to move a substrate into and out of the substrate handling chamber 300. An opening through the gate valve 1100B aligns with a substrate transport slot provided in the substrate handling chamber 300 and the first load lock module 400 to allow substrates to be moved between the substrate handling chamber 300 and the first load lock module 400 through the gate valve 1100B.Each of the gate valves 1100A, 1100B may have the same structure, or one or more of the gate valves 1100A, 1100B may have a different structure than the other gate valves 1000, 1100A, 1100B that are present.

[0079] In the substrate processing system 100A of FIG. 6, one side of the second load lock module 500 is connected by one or more gate valves 1200A (two are shown in FIG. 6) to the first substrate handling chamber 300, and the opposite side of the second load lock module 500 is connected by one or more gate valves 1200B (two are shown in FIG. 6) to a load lock mounting area in which a second substrate handling chamber 600 is provided. The second load lock module 500 further includes one or more substrate supports 502 (two are shown in FIG. 6, e.g., "set plates") for holding a substrate while it waits to be transferred between the two substrate handling chambers 300, 600. When closed, the gate valves 1200A, 1200B sealingly separate the second load lock module 500 from the two substrate handling chambers 300, 600 (so that independent atmospheric conditions may be maintained in each chamber). When open, the gate valve 1200A provides an opening (e.g., a substrate transport slot) through which the end effector 320A of the robot arm 320 can extend to move a substrate into and out of the first substrate handling chamber 300. The openings through the gate valve 1200A align with substrate transport slots provided in the first substrate handling chamber 300 and the second load lock module 500 to allow substrates to be moved between the substrate handling chamber 300 and the second load lock module 500 through the gate valve 1200A. When open, the gate valve 1200B provides an opening (e.g., a substrate transport slot) through which the end effector 620A of the robot arm 620 can extend to move a substrate into and out of the second substrate handling chamber 600. An opening through gate valve 1200B aligns with a substrate transport slot provided in the second substrate handling chamber 600 and the second load lock module 500 to allow substrates to be moved between the second substrate handling chamber 600 and the second load lock module 500 through gate valve 1200B.Each of the gate valves 1200A, 1200B may have the same structure, or one or more of the gate valves 1200A, 1200B may have a different structure than the other gate valves 1200A, 1200B present. The gate valves 1200A and / or 1200B may also have the same structure as the gate valves 1000, 1100A and / or 1100B, or may have a different structure.

[0080] The first load lock module 400 may have the same structure as the second load lock module 500, and / or the first load lock module 400 and the second load lock module 500 may be interchangeable (e.g., the load lock modules 400, 500 may be interchangeable and / or have a modular structure). In other embodiments, the first load lock module 400 and the second load lock module 500 may have a different structure and / or may not be interchangeable (e.g., the load lock modules 400, 500 may not be interchangeable within the substrate processing system 100A). Either or both of the load lock modules 400, 500 may have multi-station cooling capabilities and / or may be of the pass-through type.

[0081] 6 further illustrates that either or both of the substrate handling chambers 300, 600 may include metrology stations 200, for example, of the type described above. These metrology stations 200 may have any of the structures, functions, and / or features described above in conjunction with FIGS. 1-5, including any options or alternatives to the structures, functions, and / or features described above, if present.

[0082] Additionally or alternatively, the exemplary substrate processing system 100A of Fig. 6 includes other potential arrangements of metrology stations 200 according to some embodiments of the present technology. Fig. 6 illustrates an inner substrate handling chamber 300 including six sides (e.g., sides arranged in a hexagonal shape from the top view shown in Fig. 6). As described above, (a) one side 300A provides a load lock mounting area (and in this example embodiment engages with a first load lock module 400 via a gate valve 1100B), (b) an opposing side 300F provides a second load lock mounting area (and in this example embodiment engages with a second load lock module 500 via a gate valve 1200A), and (c) two sides (in this example, sides 300B and 300C located closest to the first load lock module 400) provide substrate processing chamber mounting areas (and in this example, connect to the substrate processing chamber 900). Each of these four sides is relatively wide, eg, capable of accommodating at least two gate valves (and at least two substrate transport slots) across their width (or side to side).

[0083] However, this illustrated substrate handling chamber 300 includes two additional sides (in this example, sides 300D and 300E located closest to the second load lock module 500). These two additional sides 300D and 300E have a smaller width (left-right) than the sides 300A-300C and 300F (e.g., potentially accommodating one substrate transport slot in the width direction). In this illustrated example, at least one of these two sides 300D, 300E provides a metrology station mounting area such that the substrate handling chamber 300 may engage with (or be constructed as) a metrology station 200. The metrology station 200 may be configured to measure and / or determine at least one of a weight of a substrate, a weight of a layer on the substrate, and / or a thickness of a layer on the substrate. The metrology stations 200 associated with surfaces 300D and / or 300E in this example may include at least a portion of the structures shown in FIGS. 2A-2E housed within separate chambers that are attached to (and potentially separable from) the substrate handling chamber 300, for example, via gate valve 1300. In the example of FIG. 6, each of surfaces 300D and 300E engages or is constructed as a metrology station 200. The metrology stations 200 provided on surfaces 300D and / or 300E may have any of the structures, functions, and / or features described above in conjunction with FIGS. 1-5, including any options or alternatives to the structures, functions, and / or features described above.

[0084] Among some more specific features, the inner substrate handling chamber 300 includes: (a) a first surface 300A configured to receive an incoming substrate 250 for processing and for discharging the processed substrate 250; (b) a second surface 300B extending at an oblique angle relative to the first surface and configured to engage the substrate processing chamber 900; (c) a third surface 300C extending at an oblique angle relative to the first surface 300A and configured to engage the substrate processing chamber 900; (d) a fourth surface 300D extending at an oblique angle relative to the second surface 300B; (e) a fifth surface 300E extending at an oblique angle relative to the third surface 300C; and (f) a sixth surface 300F connected between the fourth surface 300E and the fifth surface 300E. The sixth face 300F may extend at an oblique angle relative to the fourth face 300D and / or the fifth face 300E. The robot arm 320 may move the substrate 250 in and out of the metrology station 200, for example, at faces 300D and / or 300E through the metrology station 200 chamber, the gate valve 1300, and aligned substrate transport slots provided in the substrate handling chamber 300.

[0085] As some further features, the outer load lock module 500 of this example substrate processing system 100A is connected to the sixth face 300F (e.g., via a gate valve 1200A). The outer substrate handling chamber 600 includes five faces (e.g., faces arranged in a pentagonal shape from the top view shown in FIG. 6). In this depicted example, the outer substrate handling chamber 600 includes (a) a seventh face 600A connected to the outer load lock module 500 (via gate valve 1200B), (b) an eighth face 600B extending at an oblique angle relative to the seventh face 600A and configured to engage a substrate processing chamber 900, (c) a ninth face 600C extending at an oblique angle relative to the seventh face 600A and configured to engage another substrate processing chamber 900, (d) a tenth face 600D extending at an oblique angle relative to the eighth face 600B and configured to engage another substrate processing chamber 900, and (e) an eleventh face 600E extending at an oblique angle relative to the ninth face 600C and configured to engage another substrate processing chamber 900. The tenth face 600D and the eleventh face 600E may extend at an oblique angle relative to one another. The outer load lock module 500 includes one or more substrate supports 502 for holding substrates 250 transferred between the first substrate handling chamber 300 and the second substrate handling chamber 600 through the sixth face 300F and the seventh face 600A.

[0086] According to at least some aspects of the present technology, providing one or more metrology stations 200 in the substrate processing system 100, 100A has various advantages. Using this technology, the substrate 250 can be weighed immediately before entering one of the substrate processing chambers 104A-104D and / or immediately after exiting one of the substrate processing chambers 104A-104D, without leaving the controlled environment of the substrate processing system 100, 100A. These features allow, for example, the substrate 250 to be weighed before it is exposed to oxygen, water, and / or other potential contaminants that may deposit on the substrate surface. Hence, more accurate weight and / or thickness measurements can be measured (which is advantageous since the layers and / or weights being measured are typically very small). This technology may also enable a manufacturer to quickly recognize if one (or more) of the substrate processing chambers 104A-104D, 900, and / or a process or procedure performed in one (or more) of the substrate processing chambers 104A-104D, 900 is not functioning in an intended or expected manner (thereby producing an unsuitable substrate product that may need to be discarded). These features may enable a manufacturer to take corrective action more quickly, thereby reducing scrap and waste.

[0087] Although the present disclosure has been provided in the context of certain embodiments and examples, those skilled in the art will understand that the present disclosure extends beyond the specifically described embodiments to other alternative embodiments and / or uses of the embodiments, and their obvious modifications, equivalents. In addition, while several variations of the embodiments of the present disclosure have been shown and described in detail, other modifications that are within the scope of the present disclosure will be readily apparent to those skilled in the art based on the present disclosure. It is also contemplated that various combinations or subcombinations of the specific features and aspects of the embodiments may be made and still fall within the scope of the present disclosure. It should be understood that various features and aspects of the disclosed embodiments can be combined with or substituted for one another to form various modes of the embodiments of the present disclosure. It is therefore not intended that the scope of the present disclosure should be limited by the specific embodiments described above.

[0088] The headings provided herein (if any) are for convenience only and do not necessarily affect the scope or meaning of the devices and methods disclosed herein. [Explanation of symbols]

[0089] 202 Support base 210 Oscillator Source 212 Strain Sensor 214 Phase Locked Loop Module

Claims

1. 1. A weight and / or layer thickness measuring system, comprising: a support base including a support surface for supporting an object to be weighed; an oscillator source configured to apply an oscillation frequency to the support base; a strain sensor configured to measure a strain induced in the support base by the oscillator source; a phase-locked loop module connected to the oscillator source and the strain sensor, wherein the oscillation frequency applied to the support base by the oscillator source is modified based on phase difference information determined by the phase-locked loop module to find a resonant frequency of the support base and any object supported by the support base.

2. a memory for storing data representative of the resonant frequency; 2. The weight and / or layer thickness measurement system of claim 1, further comprising: a computer processing system programmed and adapted to: (a) receive input data representative of a first resonant frequency determined for the support base and a first object supported thereon; (b) receive input data representative of a second resonant frequency determined for the support base and a second object supported thereon; and (c) determine a weight difference between (i) the support base and the second object supported thereon, and (ii) the support base and the first object supported thereon, based on the second resonant frequency and the first resonant frequency.

3. 3. The weight and / or layer thickness measurement system of claim 2, wherein the support base and the first object supported thereon comprise a substrate prior to a layer deposition process, and the support base and the second object supported thereon comprise the substrate after the layer deposition process, the substrate comprising a layer to be deposited thereon.

4. 4. The weight and / or layer thickness measuring system of claim 3, wherein the computer processing system is further programmed and / or adapted to determine a thickness of the layer based on the weight difference between (i) the support base and the second object supported thereon, and (ii) the support base and the first object supported thereon.

5. The weight and / or layer thickness measurement system of claim 1 , wherein the oscillator source comprises a piezoelectric resonator and the strain sensor comprises a piezoelectric strain sensor.

6. 1. A substrate processing system comprising: a first substrate handling chamber including a first plurality of component mounting areas, the first plurality of component mounting areas including: (a) a first load lock module mounting area configured to engage a first load lock module, where incoming substrates are received for processing and where outgoing processed substrates are discharged; (b) a second load lock module mounting area; (c) a first plurality of substrate processing chamber mounting areas; and (d) a metrology station mounting area; a load lock module connected to the second load lock module mounting area; a second substrate handling chamber including a second plurality of component mounting areas, the second plurality of component mounting areas including: (a) a third load lock module mounting area that engages the load lock module; and (b) a second plurality of substrate processing chamber mounting areas; a metrology station connected to the metrology station mounting area, the metrology station configured to measure at least one of a weight of a substrate, a weight of a layer on the substrate, or a layer thickness on the substrate.

7. 7. The substrate processing system of claim 6, wherein the metrology station is configured to: (a) determine a first resonant frequency of a support base and a weighed substrate supported on the support base prior to processing the substrate in a substrate processing chamber; (b) determine a second resonant frequency of the support base and the substrate supported on the support base after the processing; and (c) determine a weight difference of the substrate after and before processing based on the second resonant frequency and the first resonant frequency.

8. The substrate processing system of claim 7 , wherein the metrology station is further configured to determine a thickness of a layer applied to the substrate during the processing based on the weight difference.

9. The measurement station includes: a support base including a support surface for supporting a substrate to be weighed; an oscillator source configured to apply an oscillation frequency to the support base; a strain sensor configured to measure a strain induced in the support base by the oscillator source; 7. The substrate processing system of claim 6, further comprising: a phase-locked loop module connected to the oscillator source and the strain sensor, wherein the oscillation frequency applied to the support base by the oscillator source is modified based on phase difference information determined by the phase-locked loop module to find a resonant frequency for the support base and the substrate supported by the support base.

10. The measurement station includes: a memory for storing data representative of the resonant frequency; 10. The substrate processing system of claim 9, further comprising: a computer processing system programmed and adapted to: (a) receive input data representative of a first resonant frequency determined for the support base and a first substrate supported thereon; (b) receive input data representative of a second resonant frequency determined for the support base and a second substrate supported thereon; and (c) determine a weight difference between (i) the support base and the second substrate supported thereon, and (ii) the support base and the first substrate supported thereon, based on the second resonant frequency and the first resonant frequency.

11. 11. The substrate processing system of claim 10, wherein the support base and the first substrate supported thereon comprise a substrate prior to a layer deposition process, and the support base and the second substrate supported thereon comprise the substrate after the layer deposition process, the second substrate comprising a layer deposited thereon.

12. 12. The substrate processing system of claim 11, wherein the computer processing system is further programmed and adapted to determine a thickness of the layer based on a weight difference between (i) the support base and the second substrate supported thereon, and (ii) the support base and the first substrate supported thereon.

13. 11. The substrate processing system of claim 10, wherein the support base and the first substrate supported thereon comprise a substrate prior to an etching process, and the support base and the second substrate supported thereon comprise the substrate after the etching process, the second substrate comprising an etched layer.

14. The substrate processing system of claim 9 , wherein the oscillator source comprises a piezoelectric resonator and the strain sensor comprises a piezoelectric strain sensor.

15. 1. A substrate processing system comprising: a first substrate handling chamber, (a) a first surface configured to receive an incoming substrate for processing and to discharge a processed substrate; (b) a second surface extending at an oblique angle relative to the first surface, the second surface being configured to engage a first substrate processing chamber; and (c) a third surface extending at an oblique angle relative to the first surface, the third surface configured to engage a second substrate processing chamber; and (d) a fourth surface extending at an oblique angle relative to the second surface; and (e) a fifth surface extending at an oblique angle relative to the third surface; and (f) a first substrate handling chamber including a sixth side connected between the fourth side and the fifth side; and a load lock module connected to the sixth surface; a second substrate handling chamber, (a) a seventh face connected to the load lock module; (b) an eighth surface extending at an oblique angle relative to the seventh surface, the eighth surface configured to engage a third substrate processing chamber; and (c) a ninth surface extending at an oblique angle relative to the seventh surface, the ninth surface configured to engage a fourth substrate processing chamber; and (d) a tenth surface extending at an oblique angle relative to the eighth surface, the tenth surface configured to engage a fifth substrate processing chamber; and (e) an eleventh surface extending at an oblique angle relative to the ninth surface, the eleventh surface configured to engage a sixth substrate processing chamber; a second substrate handling chamber, the load lock module including one or more substrate supports for holding a substrate transferred between the first substrate handling chamber and the second substrate handling chamber through the sixth side and the seventh side; a metrology station for measuring at least one of a weight of a substrate, a weight of a layer on the substrate, or a thickness of a layer on the substrate, the metrology station being mounted to one of the fourth side or the fifth side.

16. the metrology station is mounted on the fourth surface, and the substrate processing system comprises:

16. The substrate processing system of claim 15, further comprising a second metrology station for measuring at least one of a weight of a substrate, a weight of a layer on a substrate, or a layer thickness on a substrate, said second metrology station mounted to the fifth surface.

17. 1. A substrate processing system comprising: a first substrate handling chamber comprising an internal chamber and a first robotic arm mounted within the internal chamber; a first substrate processing chamber coupled to the first substrate handling chamber via a first gate valve, a portion of the first robot arm extending through the first gate valve into the first substrate processing chamber to move a substrate in and out of the first substrate processing chamber; a weight and / or layer thickness measurement system located within the internal chamber.

18. 18. The substrate processing system of claim 17, wherein the weight and / or layer thickness measurement system is configured to: (a) determine a first resonant frequency of the support base and a weighed substrate supported on the support base before processing the substrate in the first substrate processing chamber; (b) determine a second resonant frequency of the support base and the substrate supported on the support base after processing the substrate in the first substrate processing chamber; and (c) determine a weight difference of the substrate after processing and before processing in the first substrate processing chamber based on the second resonant frequency and the first resonant frequency.

19. 20. The substrate processing system of claim 18, wherein the weight and / or layer thickness measurement system is further configured to determine a thickness of a layer applied to the substrate while processing in the first substrate processing chamber based on the weight difference.

20. said weight and / or layer thickness measuring system, a support base including a support surface for supporting a substrate to be weighed; an oscillator source configured to apply an oscillation frequency to the support base; a strain sensor configured to measure a strain induced in the support base by the oscillator source; 20. The substrate processing system of claim 17, further comprising: a phase-locked loop module connected to the oscillator source and the strain sensor, wherein the oscillation frequency applied to the support base by the oscillator source is modified based on phase difference information determined by the phase-locked loop module to find a resonant frequency for the support base and the substrate supported by the support base.

21. said weight and / or layer thickness measuring system, a memory for storing data representative of the resonant frequency; 21. The substrate processing system of claim 20, further comprising: a computer processing system programmed and adapted to: (a) receive input data representative of a first resonant frequency determined for the support base and a first substrate supported thereon; (b) receive input data representative of a second resonant frequency determined for the support base and a second substrate supported thereon; and (c) determine a weight difference between (i) the support base and the second substrate supported thereon, and (ii) the support base and the first substrate supported thereon, based on the second resonant frequency and the first resonant frequency.

22. 22. The substrate processing system of claim 21 , wherein the support base and the first substrate supported thereon comprise a substrate prior to a layer deposition process, and the support base and the second substrate supported thereon comprise the substrate after the layer deposition process, the second substrate comprising a layer deposited thereon.

23. 23. The substrate processing system of claim 22, wherein the computer processing system is further programmed and adapted to determine a thickness of the layer based on a weight difference between (i) the support base and the second substrate supported thereon, and (ii) the support base and the first substrate supported thereon.

24. 21. The substrate processing system of claim 20, wherein the oscillator source comprises a piezoelectric resonator and the strain sensor comprises a piezoelectric strain sensor.

25. 18. The substrate processing system of claim 17, further comprising a second substrate processing chamber coupled to the first substrate handling chamber via a second gate valve, wherein the portion of the first robot arm extends through the second gate valve and into the second substrate processing chamber, configured to move a substrate in and out of the second substrate processing chamber, and wherein the first robot arm is movable to move a substrate (a) between the weight and / or layer thickness measurement system and the first substrate processing chamber, and (b) between the weight and / or layer thickness measurement system and the second substrate processing chamber.

26. 18. The substrate processing system of claim 17, further comprising a plurality of additional substrate processing chambers coupled to the first substrate handling chamber, wherein the portion of the first robot arm extends into each of the plurality of additional substrate processing chambers and is configured to move a substrate in and out of the additional substrate processing chambers, and wherein the first robot arm is movable to move a substrate (a) between the weight and / or layer thickness measurement system and the first substrate processing chamber, and (b) between the weight and / or layer thickness measurement system and each of the additional substrate processing chambers.

27. 1. A method for determining the weight and / or thickness of a layer on a substrate, comprising the steps of: Placing a substrate on a support surface of a support base; applying an oscillation frequency to the support base with the substrate supported thereon; adjusting the oscillation frequency applied to the support base to find a first resonant frequency of the support base having the substrate supported on the support surface; treating the substrate to add a layer of material to the substrate or remove material from a layer on the substrate, thereby forming a treated substrate; placing the treated substrate on the support surface of the support base; applying an oscillation frequency to the support base with the treated substrate supported thereon; adjusting the oscillation frequency applied to the support base to find a second resonant frequency of the support base with the treated substrate supported thereon; and determining at least one of a weight or a thickness of a layer on the treated substrate based on the second resonant frequency and the first resonant frequency.

28. placing a reference substrate having a known weight on the support surface of the support base; applying an oscillation frequency to the support base with the reference substrate supported thereon; tuning the oscillation frequency applied to the support base with the reference substrate supported thereon to find a reference resonant frequency; 28. The method of claim 27, further comprising using the reference resonant frequency and the known weight for calibration and / or to select an initial oscillation frequency for measurement.

29. placing the substrate on the support surface of the support base and placing the treated substrate on the support surface of the support base includes moving the substrate and the treated substrate using a first robotic arm; Prior to said processing of the substrate, the first robotic arm moves the substrate from the support surface of the support base to a substrate processing chamber coupled to a substrate handling chamber containing the support base; 28. The method of claim 27, wherein after the processing of the substrate, the first robotic arm moves the substrate from the substrate processing chamber to the support surface of the support base located in the substrate handling chamber.

30. 28. The method of claim 27, wherein applying an oscillation frequency to the support base while the substrate is supported thereon and applying an oscillation frequency to the support base while the treated substrate is supported thereon comprise vibrating the support base using a piezoelectric resonator.

31. 31. The method of claim 30, wherein the steps of adjusting the oscillation frequency applied to the support base to find the first resonant frequency and adjusting the oscillation frequency applied to the support base to find the second resonant frequency include measuring a strain induced in the support base with a piezoelectric strain sensor, determining a phase difference between the oscillation frequency detected by the piezoelectric strain sensor and a response frequency using a phase-locked loop system, and adjusting the oscillation frequency until the phase difference measured by the phase-locked loop system is approximately -90 degrees.

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