Steam cleaning of substrate surface

Abstract

To provide a substrate processing system for steam cleaning of semiconductor wafers and other substrates.SOLUTION: A method for cleaning substrates with steam includes placing the substrate in a processing chamber, controlling the pressure of the processing chamber to a default pressure range, controlling the temperature of the processing chamber to a default temperature range, supplying a vapor mixture containing metal chelating vapor during the first period to remove metal contaminants from the surface of the substrate, and removing reactants from the processing chamber by purging or exhausting after the first period.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] [CROSS REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Application No. 62 / 865,647, filed June 24, 2019, the entire disclosure of which is incorporated herein by reference.

[0002] FIELD OF THE DISCLOSURE The present disclosure relates to substrate processing systems, and more particularly to substrate processing systems for vapor cleaning of substrates such as semiconductor wafers. [Background technology]

[0003] The discussion of the background art provided herein is intended to present the contents of the present disclosure generally, and the inventions of the presently listed inventors are not admitted expressly or impliedly as prior art to the present disclosure, to the extent that they are described in this Background section, or in aspects of the description that are not prior art at the time of filing.

[0004] Substrate processing systems may be used to process films on substrates, such as semiconductor wafers. Examples of processes include etching, deposition, ashing, and other types of processes. During substrate processing, multiple processes may be performed in one or more processing chambers. Substrates are typically cleaned between processes to remove contaminants from an upstream processing chamber before further processing in a downstream processing chamber.

[0005] Wet cleaning may be performed to clean the substrate. For example, the substrate may be attached to a chuck. Fluid nozzles may be used to dispense a fluid, such as a liquid, while the chuck rotates, and / or heat may be applied to treat the substrate.

[0006] Some substrates include high aspect ratio (HAR) structures. For example, HAR structures may include nanopillars, trenches, or vias. HAR structures have a width (parallel to the surface of the substrate) that is significantly narrower than the feature's depth (perpendicular to the surface of the substrate). HAR structures with aspect ratios of greater than 5:1 are not uncommon. More advanced processes include HAR structures with even higher aspect ratios.

[0007] Pattern collapse occurs when one or more HAR structures collapse and move laterally relative to the surface of the substrate and / or directly contact adjacent HAR structures. Pattern collapse often occurs during drying after wet cleaning. Pattern collapse can cause performance issues and defects. Summary of the Invention

[0008] A method for cleaning a substrate includes placing the substrate in a processing chamber, controlling a pressure of the processing chamber to a predetermined pressure range, controlling a temperature of the processing chamber to a predetermined temperature range, and supplying a vapor mixture including a metal chelating vapor for a first period of time to remove metal contaminants from a surface of the substrate.

[0009] In other features, the components located within the processing chamber are made of a non-metallic material and / or the exposed surfaces of the components located within the processing chamber are provided with a non-metallic coating.

[0010] In another feature, the metal chelating vapor includes β-diketones and derivatives thereof, the metal chelating vapor being selected from the group consisting of acetylacetone (acac), trifluoroacetylacetone (tfa), hexafluoroacetylacetone (hfacH), pivaloyltrifluoroacetone, tetramethylheptanedione, and heptafluoro-dimethyloctanedione (fod).

[0011] In another feature, the metal chelate vapor comprises trifluoroacetic acid and ethylenediamine.

[0012] In other features, the vapor mixture further comprises a hydrogen halide.

[0013] The method includes removing the reactants from the processing chamber after a first period of time, supplying an oxidizing gas mixture to the processing chamber for a second period of time, and removing the reactants from the processing chamber after the second period of time.

[0014] In other features, the method includes delivering an oxidizing gas mixture to the processing chamber for a second period of time prior to delivering the vapor mixture to the processing chamber, and removing the reactants from the processing chamber after the second period of time.

[0015] In other features, the predetermined pressure range is from 0.1 Torr to 100 Torr. The predetermined temperature range is from 50°C to 300°C.

[0016] A substrate processing system for cleaning a substrate includes a processing chamber having a top surface, a bottom surface, and sidewalls that are made of and / or coated with a non-metallic material. A substrate support supports a substrate. A heater heats the substrate to a temperature within a predetermined range. A vapor supply system supplies a vapor mixture including a metal chelating vapor to the processing chamber for a first period of time to remove metal contaminants from a surface of the substrate.

[0017] In another aspect, the metal chelate vapor includes β-diketones and their derivatives. The metal chelate vapor includes acetylacetone (acac), trifluoroacetylacetone (tfa), pivaloyltrifluoroacetone, tetramethylheptanedione, hexafluoroacetylacetone (hfacH), and heptafluoro-dimethyloctanedione (fod). The metal chelate vapor includes trifluoroacetic acid and ethylenediamine.

[0018] In other features, the vapor mixture further includes a vapor including a halogen species. The gas delivery system delivers the oxidizing gas mixture to the processing chamber for a second time period after the first time period. The gas delivery system delivers the oxidizing gas mixture to the processing chamber for the second time period. The gas delivery system delivers the oxidizing gas mixture to the processing chamber before the vapor delivery system delivers the vapor mixture.

[0019] In other features, the process chamber is maintained at a predetermined pressure range of 0.1 Torr to 100 Torr. The predetermined temperature range is 50°C to 300°C.

[0020] The processing chamber includes a viewing window, and a heater is disposed outside the processing chamber adjacent the viewing window, the heater including a plurality of light emitting diodes.

[0021] In other features, the heater is disposed inside the processing chamber, the exposed surface of the heater is made of a non-metallic material or has a non-metallic coating, and the heater comprises at least one of an embedded heater and a coolant passage.

[0022] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. [Brief description of the drawings]

[0023] The present disclosure will become better understood from the detailed description and the accompanying drawings.

[0024] [Figure 1A] 2A illustrates a cross-sectional view of an exemplary substrate having high aspect ratio features before cleaning.

[0025] [Figure 1B] 1A-1C are cross-sectional views of an example substrate having high aspect ratio features with pattern collapse after wet cleaning.

[0026] [Figure 1C] 4A-4C are cross-sectional views of example substrates having high aspect ratio features after cleaning with a vapor mixture according to the present disclosure without pattern collapse.

[0027] [Figure 2A] 1 is a functional block diagram of an exemplary substrate processing system for cleaning a substrate according to the present disclosure. [Figure 2B] 1 is a functional block diagram of an exemplary substrate processing system for cleaning a substrate according to the present disclosure.

[0028] [Diagram 3] 1 is a flow chart of an exemplary method for cleaning a substrate with vapor according to the present disclosure.

[0029] Within the figures, reference numbers may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] Metal contamination of the substrate can be caused by upstream process chamber metals (UPCM) such as stainless steel (iron (Fe), chromium (Cr), nickel (Ni), and molybdenum (Mo)), chamber coatings such as yttrium (Y), and / or chamber body materials such as aluminum (Al). Contamination can also be caused by the presence of other metals: transition metals (such as titanium (Ti), vanadium (V), chromium (Cr), magnesium (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), yttrium (Y), zirconium (Zr), molybdenum (Mo), and tungsten (W)), alkaline earth metals (such as magnesium (Mg) and calcium (Ca)), and alkali metals (such as sodium (Na) and potassium (K)).

[0031] Substrate cleaning systems and methods according to the present disclosure clean substrates with a vapor mixture to remove metal contaminants without leaving residue or causing the collapse of the HAR structure. As further described below, the vapor mixture converts the metals into volatile metal compounds.

[0032] In some examples, the vapor mixture includes a metal chelate vapor. In some examples, the metal chelate vapor is selected from the group consisting of β-diketones and derivatives thereof. Examples of β-diketones include acetylacetone (acac), trifluoroacetylacetone (tfa), hexafluoroacetylacetone (hfacH), pivaloyltrifluoroacetone, tetramethylheptanedione, and heptafluoro-dimethyloctanedione (fod). In other examples, the metal chelate vapor includes trifluoroacetic acid (C2HF3O2) and ethylenediamine. Examples of β-diketone derivatives include halogenated derivatives (e.g., fluorinated derivatives such as trifluoroacetylacetone, hexafluoroacetylacetone, etc.).

[0033] Some metal chelating vapors, such as hfacH, are reactive with metals, such as stainless steel. In some examples, surfaces of the substrate cleaning system exposed to the metal chelating vapor are made of a non-metallic material or have a non-metallic coating. For example, all components located within the processing chamber may be made of a non-metallic material, or exposed surfaces of metal-containing components may have a non-metallic coating, such as Teflon, silicon carbide, silicon, or other suitable coating.

[0034] In some examples, the substrate is heated to a predetermined temperature greater than 50° C. and less than 500° C. during cleaning. In some examples, the substrate is heated to a predetermined temperature greater than 50° C. and less than 300° C. during cleaning. In some examples, a heater is used to heat the substrate. In some examples, the heater is located outside the process chamber adjacent to the viewing window and optionally comprises a light emitting diode (LED) heater. In some examples, the heater is located inside the process chamber and optionally segmented. In some examples, the chamber pressure is controlled to a predetermined pressure of 0.1 Torr to 100 Torr during cleaning.

[0035] In some examples, the vapor mixture may further include another vapor containing a halogen species, such as hydrogen fluoride (HF) vapor, hydrogen chloride (HCl) vapor, hydrogen bromide (HBr) vapor, hydrogen iodide (HI) vapor, etc. The halogen species vapor is generally chemically compatible and may be provided together with the metal chelate vapor. However, the metal chelate vapor and the halogen species vapor may be provided separately to the process chamber and / or may be used in the process chamber for different periods of time.

[0036] In some examples, the substrate is treated with an oxidizing gas, such as ozone (O3) gas, molecular oxygen (O2) gas, nitrous oxide (NO) gas, etc. The oxidizing gas may be used to remove organic contaminants. In some examples, to prevent decomposition of the metal chelate vapor and / or halogen species vapor, the oxidizing gas is provided before and after the vapor mixture is provided to or used in the process chamber.

[0037] In some examples, the cleaning systems and methods provide a vapor that reacts with a metal (which may be in the form of a metal oxide or metal fluoride) to form a volatile metal compound at suitable processing temperatures (<300° C.). In some examples, the vapor and metal compounds are relatively stable at these processing temperatures. In some examples, the cleaning process is selective to Si-based materials.

[0038] β-diketones contain a ketone group at the β-carbon position (e.g., acac, tfa, hfacH, and fod). β-diketones exist primarily in the enol form. β-diketones function as bidentate ligands to form volatile metal chelate complexes. Complexes of β-diketones with transition metals result from the availability of d-orbitals of these metals. Metal diketonates, especially those formed from fluorinated β-diketones, have high vapor pressures.

[0039] 1A-1C, a substrate 120 having high aspect ratio (HAR) features is shown. As shown in FIG. 1A, the substrate 120, prior to cleaning, comprises one or more underlayers 124 and underlayer 126. The HAR features 122 are spaced apart on the underlayer 124. An exposed layer (illustrated as 134) of the substrate 120 may be contaminated with metal and may need to be cleaned before downstream processing can be performed.

[0040] In FIG. 1B, substrate 120 is shown after cleaning using a wet cleaning process. As shown, some of the HAR features 122 may experience pattern collapse (shown as 160) after cleaning. In FIG. 1C, substrate 120 is shown after cleaning using a vapor mixture (and any oxidizing gas mixture) described herein. Exposed layer 134 has been removed without causing pattern collapse of HAR features 122. As can be appreciated, although cleaning of HAR features 122 is shown, cleaning of other types of surfaces and / or features may be performed.

[0041] 2A and 2B, a substrate processing system 200 for cleaning a substrate is shown. In FIG. 2A, the substrate processing system 200 includes a processing chamber 210 having a top surface 214, a bottom surface 216, and a sidewall 218. A substrate 222 is disposed inside the processing chamber 210 during vapor cleaning. In some examples, the substrate 222 may be disposed on a support 224 that supports its radially outer edge. A window 226 is disposed along one side of the processing chamber adjacent one side of the substrate 222. In some examples, the window 226 is optionally transparent. In some examples, the window 226 is made of quartz. In some examples, exposed surfaces of components located inside the processing chamber 210 and exposed to the metal chelate vapor are made of a non-metallic material. In some examples, these components are made of a non-metallic material or are metallic and coated with a non-metallic coating material (such as Teflon, silicon, or silicon carbide).

[0042] The showerhead 230 includes a gas plenum 234 and through holes 238. The vapor mixture flows into the gas plenum 234 and is distributed by the through holes 238. The heater 240 is located inside or outside the processing chamber 210. The heater 240 heats the substrate 222 to a desired temperature for processing. For example, a heated substrate support, such as an electrostatic chuck, a pedestal, or a mechanical chuck, is located inside the processing chamber 210. Alternatively, an infrared heater, a laser, a flash lamp, an LED heater, or other type of optical heater can be located outside the processing chamber 210 and a window 226 can be used.

[0043] A gas supply system 250 may be used to supply one or more gases to the showerhead 230. For example, the gas supply system 250 may be used to supply a carrier gas, an inert gas, an oxidizing gas, etc. The gas supply system 250 includes gas sources 252-1, 252-2, ..., and 252-N (collectively, gas sources 252), valves 254-1, 254-2, ..., and 254-N (collectively, valves 254), and mass flow controllers 256-1, 256-2, ..., and 256-N (collectively, mass flow controllers 252). A manifold 260 receives the output of the mass flow controller 252. The manifold 260 is connected to the showerhead 230.

[0044] Vapor sources 260-1, 260-2, and 260-V (collectively, vapor sources 260) supply vapor to the showerhead 230 via valves 262-1, 262-2, and 262-V. In some examples, vapor source 260 comprises an ampoule, bubbler, or other vapor generator.

[0045] A valve 270 and a pump 272 may be used to remove reactants from the processing chamber 210 and / or to control the pressure within the processing chamber 210 .

[0046] A controller 280 may be used to control the timing of gas supply from gas supply system 250, heating of substrate 222 by heater 240, supply of a vapor mixture from vapor source 260, regulation of pressure within processing chamber 210 (e.g., by feedback from pressure sensor 281), and / or removal of reactants by purging or evacuation.

[0047] As can be appreciated, when the vapor mixture includes more than one vapor, the vapor mixture can be mixed prior to delivery and then delivered to the processing chamber. Alternatively, the vapors of the vapor mixture can be delivered individually and mixed in the chamber. In other examples, the vapors are delivered separately to the processing chamber and not mixed. In some examples, the oxidizing gas mixture is delivered separately from the metal chelate vapor mixture.

[0048] 2B, the heater 290 may be located inside the processing chamber 210. The heater 290 may include a single zone or multiple zones. In some examples, the heater 290 is made of a non-metallic material or a metallic material coated with a non-metallic material, as described herein. The heater 290 may include a coolant flow passage 294 and / or an embedded heater, such as a thermal control element (TCE), a resistive heating element, a Peltier heater, or the like.

[0049] 3, a method 300 for cleaning a substrate with vapor is shown. At 310, a substrate is placed in a processing chamber. At 314, the chamber pressure is set to a pressure in a predetermined pressure range. At 318, the substrate is heated to a temperature in a predetermined temperature range. At 322, a vapor mixture including a metal chelate vapor is provided to the processing chamber for a first period of time. In some examples, a halogen species vapor is provided with the metal chelate vapor or separately. At 324, after the first period of time, reactants are removed from the processing chamber by purging or evacuation.

[0050] A gas mixture including an oxidizing gas is supplied to the process chamber for a second period of time at 326. After the second period of time, the reactants are removed from the process chamber at 328 by purging or evacuation.

[0051] At 330, the substrate is removed from the processing chamber. At 332, the method determines whether another substrate should be processed. If 332 is true, the method returns to 310. Otherwise, the method ends.

[0052] The foregoing is merely illustrative in nature and is not intended to limit the disclosure, its application, or uses in any way. The broad teachings of the disclosure may be embodied in various forms. Thus, while the disclosure includes specific examples, other variations will become apparent upon review of the drawings, specification, and claims below, and the true scope of the disclosure should not be so limited. It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having certain features, any one or more of those features described with respect to an embodiment of the disclosure may be implemented in other embodiments and / or may be implemented in combination with features of other embodiments (even if the combination is not specified). In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with each other remain within the scope of the disclosure.

[0053] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "adjacent," "on," "above," "below," and "disposed." When a relationship between a first element and a second element is described in the above disclosure, unless expressly stated as "direct," the relationship may be a direct relationship in which there are no other intervening elements between the first element and the second element, but at the same time, it may be an indirect relationship in which there are one or more intervening elements (spatial or functional) between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted as meaning a logic using a non-exclusive logical OR (A OR B OR C), and not as meaning "at least one of A, at least one of B, and at least one of C."

[0054] In some embodiments, the controller is part of a system that may be part of the examples described above. Such systems may include processing tools, chambers, processing platforms, and / or semiconductor processing equipment with specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling pre-, during, and post-processing operations of semiconductor wafers or substrates. These electronics may be referred to as "controllers" and may control various parts or sub-parts of the system. Depending on the processing requirements and / or type of system, the controller may be programmed to control any process disclosed herein, including supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid supply settings, position operation settings, wafer loading and unloading from tools and other transport tools, and / or wafer loading and unloading from load locks connected or coupled to the specific system.

[0055] In general, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in firmware format that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or one or more processing steps during the manufacture of a wafer die.

[0056] In some embodiments, the controller may be part of or coupled to a computer integrated or coupled with the system, or otherwise networked or combined with the system. For example, the controller may be in the "cloud" that allows remote access of wafer processing, or may be all or part of a fab host computer system. The computer may allow remote access to the system to monitor the progress of a manufacturing operation, review the history of past manufacturing operations, review trends or performance metrics from multiple manufacturing operations, modify parameters of a current process, set up a processing step following a current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system over a network that may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings that are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to connect to or control. Thus, as discussed above, the controller may be distributed, for example, by including one or more separate controllers networked together and cooperating toward a common purpose, such as a process or control as described herein. An example of a controller distributed for such purposes would be one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that cooperate to control a process in the chamber.

[0057] Without being limited thereto, example systems may include plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and other semiconductor processing systems that may be related to or used in the fabrication and / or manufacturing of semiconductor wafers.

[0058] As described above, depending on the processing steps being performed by the tool, the controller may be in communication with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools installed throughout the factory, a main computer, another controller, or tools used to transport materials to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

1. 1. A method for cleaning a substrate, comprising: placing the substrate in a processing chamber; controlling the pressure of the processing chamber to a predetermined pressure range; controlling the temperature of the processing chamber within a predetermined temperature range; providing a vapor mixture including a metal chelating vapor for a first period of time to remove metal contaminants from a surface of the substrate; A method comprising:

2. 2. The method of claim 1 , The components located within the processing chamber are made of non-metallic materials, and / or an exposed surface of the component located within the processing chamber having a non-metallic coating; A method that is at least one of the above.

3. 3. The method of claim 2, The method, wherein the metal chelate vapor comprises β-diketones and derivatives of β-diketones.

4. 2. The method of claim 1 , The method of claim 1, wherein the metal chelate vapor is selected from the group consisting of acetylacetone (acac), trifluoroacetylacetone (tfa), hexafluoroacetylacetone (hfacH), pivaloyltrifluoroacetone, tetramethylheptanedione, and heptafluoro-dimethyloctanedione (fod).

5. 2. The method of claim 1 , The method of claim 1, wherein the metal chelate vapor comprises trifluoroacetic acid and ethylenediamine.

6. 4. The method of claim 3, The method of claim 1, wherein the vapor mixture further comprises a vapor comprising a hydrogen halide.

7. 10. The method of claim 1 further comprising: removing reactants from the process chamber after the first period of time; providing an oxidizing gas mixture to the processing chamber for a second period of time; removing reactants from the process chamber after the second period of time; A method comprising:

8. 10. The method of claim 1 further comprising: providing an oxidizing gas mixture to the processing chamber for a second period of time prior to providing the vapor mixture to the processing chamber; removing reactants from the process chamber after the second period of time; A method comprising:

9. 2. The method of claim 1 , The method of claim 1, wherein the predetermined pressure range is from 0.1 Torr to 100 Torr.

10. 2. The method of claim 1 , The method, wherein the predetermined temperature is from 50°C to 300°C.

11. 1. A substrate processing system for cleaning a substrate, comprising: a process chamber having a top, bottom, and sidewalls made from and / or coated with a non-metallic material; a substrate support for supporting a substrate; a heater for heating the substrate to a temperature within a predetermined range; a vapor delivery system for delivering a vapor mixture including a metal chelating vapor to the processing chamber for a first period of time to remove metal contaminants from the surface of the substrate; A substrate processing system comprising:

12. 12. The substrate processing system of claim 11, The metal chelate vapor comprises β-diketones and derivatives of β-diketones.

13. 12. The substrate processing system of claim 11, The substrate processing system, wherein the metal chelate vapor comprises acetylacetone (acac), trifluoroacetylacetone (tfa), pivaloyltrifluoroacetone, tetramethylheptanedione, hexafluoroacetylacetone (hfacH), and heptafluoro-dimethyloctanedione (fod).

14. 12. The substrate processing system of claim 11, The substrate processing system, wherein the metal chelate vapor comprises trifluoroacetic acid and ethylenediamine.

15. 12. The substrate processing system of claim 11, The substrate processing system, wherein the vapor mixture further comprises a vapor comprising a halogen species.

16. The substrate processing system of claim 11, further comprising: A substrate processing system comprising a gas delivery system for delivering an oxidizing gas mixture to the processing chamber for a second period of time after the first period of time.

17. The substrate processing system of claim 11, further comprising:

11. A substrate processing system comprising: a gas supply system for supplying an oxidizing gas mixture to the processing chamber during a second period of time, the gas supply system supplying the oxidizing gas mixture to the processing chamber before the vapor supply system supplies the vapor mixture.

18. 12. The substrate processing system of claim 11, A substrate processing system, wherein the processing chamber is maintained at a pressure in a predetermined pressure range of 0.1 Torr to 100 Torr.

19. 12. The substrate processing system of claim 11, The substrate processing system, wherein the predetermined temperature is between 50°C and 300°C.

20. 12. The substrate processing system of claim 11, the processing chamber includes a viewing window; The heater is disposed outside the processing chamber adjacent to the viewing window.

21. 12. The substrate processing system of claim 11, The heater comprises a plurality of light emitting diodes.

22. 12. The substrate processing system of claim 11, the heater is disposed inside the processing chamber; the exposed surface of the heater is made of a non-metallic material or has a non-metallic coating; The heater of the substrate processing system includes at least one of an embedded heater and a coolant passage.

Images